WO2020158082A1 - 蒸着マスク及び蒸着マスクの製造方法 - Google Patents

蒸着マスク及び蒸着マスクの製造方法 Download PDF

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Publication number
WO2020158082A1
WO2020158082A1 PCT/JP2019/042845 JP2019042845W WO2020158082A1 WO 2020158082 A1 WO2020158082 A1 WO 2020158082A1 JP 2019042845 W JP2019042845 W JP 2019042845W WO 2020158082 A1 WO2020158082 A1 WO 2020158082A1
Authority
WO
WIPO (PCT)
Prior art keywords
vapor deposition
deposition mask
holding frame
manufacturing
mask body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/042845
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
松本　優子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to CN201980089786.XA priority Critical patent/CN113330134B/zh
Publication of WO2020158082A1 publication Critical patent/WO2020158082A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the vapor deposition chamber 100 has a configuration capable of accommodating an object on which a vapor deposition film is formed.
  • the vapor deposition source 112 is disposed below the vapor deposition substrate 104.
  • the vapor deposition source 112 has a substantially rectangular shape, and is arranged along one side of the vapor deposition substrate 104.
  • Such an evaporation source 112 is called a linear source type.
  • the vapor deposition chamber 100 has a structure in which the vapor deposition substrate 104 and the vapor deposition source 112 move relative to each other.
  • FIG. 1 shows an example in which the vapor deposition source 112 is fixed and the vapor deposition target substrate 104 moves on it.
  • the present invention is not limited to this, and for example, when the peeling layer 430 is not formed, a plating layer is formed on the substrate 410 exposed from the first insulating layer 450 and on the first insulating layer 450 by an electroless plating method,
  • the mask body 310 may be formed by removing (lifting off) the plating layer formed on the first insulating layer 450 by peeling off the first insulating layer 450.
  • the material of the mask body 310 is not particularly limited, but a magnetic material such as nickel (Ni) or nickel alloy can be used, and Invar having a small thermal expansion is particularly preferable.
  • the thickness of the mask body 310 is preferably in the range of 5 ⁇ m or more and 10 ⁇ m or less.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2019/042845 2019-01-31 2019-10-31 蒸着マスク及び蒸着マスクの製造方法 Ceased WO2020158082A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201980089786.XA CN113330134B (zh) 2019-01-31 2019-10-31 蒸镀掩模和蒸镀掩模的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-016362 2019-01-31
JP2019016362A JP7332301B2 (ja) 2019-01-31 2019-01-31 蒸着マスク及び蒸着マスクの製造方法

Publications (1)

Publication Number Publication Date
WO2020158082A1 true WO2020158082A1 (ja) 2020-08-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/042845 Ceased WO2020158082A1 (ja) 2019-01-31 2019-10-31 蒸着マスク及び蒸着マスクの製造方法

Country Status (3)

Country Link
JP (1) JP7332301B2 (https=)
CN (1) CN113330134B (https=)
WO (1) WO2020158082A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537720A (zh) * 2021-06-30 2022-12-30 株式会社日本显示器 蒸镀掩模
WO2025187510A1 (ja) * 2024-03-07 2025-09-12 大日本印刷株式会社 マスク装置、マスク積層体、フレーム積層体、マスクの交換方法、及び、有機デバイスの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196243A (ja) * 1998-12-28 2000-07-14 Fujitsu Ltd フレキシブル多層回路基板の製造方法
JP2003107723A (ja) * 2001-09-25 2003-04-09 Eastman Kodak Co メタルマスクの製造方法およびメタルマスク
JP2004349086A (ja) * 2003-05-21 2004-12-09 Kyushu Hitachi Maxell Ltd 有機ｅｌ素子用の蒸着マスクとその製造方法
JP2012114431A (ja) * 2010-11-23 2012-06-14 Ibiden Co Ltd 半導体搭載用基板、半導体装置及び半導体装置の製造方法
JP2015168848A (ja) * 2014-03-06 2015-09-28 大日本印刷株式会社 基板付蒸着マスク装置の製造方法、基板付蒸着マスクおよびレジストパターン付基板

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6430668B2 (ja) * 2016-02-10 2018-11-28 鴻海精密工業股▲ふん▼有限公司 蒸着マスクの製造方法、蒸着マスク、および有機半導体素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196243A (ja) * 1998-12-28 2000-07-14 Fujitsu Ltd フレキシブル多層回路基板の製造方法
JP2003107723A (ja) * 2001-09-25 2003-04-09 Eastman Kodak Co メタルマスクの製造方法およびメタルマスク
JP2004349086A (ja) * 2003-05-21 2004-12-09 Kyushu Hitachi Maxell Ltd 有機ｅｌ素子用の蒸着マスクとその製造方法
JP2012114431A (ja) * 2010-11-23 2012-06-14 Ibiden Co Ltd 半導体搭載用基板、半導体装置及び半導体装置の製造方法
JP2015168848A (ja) * 2014-03-06 2015-09-28 大日本印刷株式会社 基板付蒸着マスク装置の製造方法、基板付蒸着マスクおよびレジストパターン付基板

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KIMURA, KAORU: "Inorganic Adhesives", JOURNAL OF THE JAPAN WELDING SOCIETY, vol. 53, no. 2, 5 March 1984 (1984-03-05), pages 86 - 93, XP055726060 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537720A (zh) * 2021-06-30 2022-12-30 株式会社日本显示器 蒸镀掩模
CN115537720B (zh) * 2021-06-30 2024-07-19 株式会社日本显示器 蒸镀掩模
WO2025187510A1 (ja) * 2024-03-07 2025-09-12 大日本印刷株式会社 マスク装置、マスク積層体、フレーム積層体、マスクの交換方法、及び、有機デバイスの製造方法

Also Published As

Publication number Publication date
CN113330134B (zh) 2024-01-09
CN113330134A (zh) 2021-08-31
JP2020122208A (ja) 2020-08-13
JP7332301B2 (ja) 2023-08-23

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