WO2020155701A1 - 一种高可靠通用型固态硬盘快速物理销毁电路及方法 - Google Patents

一种高可靠通用型固态硬盘快速物理销毁电路及方法 Download PDF

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WO2020155701A1
WO2020155701A1 PCT/CN2019/113901 CN2019113901W WO2020155701A1 WO 2020155701 A1 WO2020155701 A1 WO 2020155701A1 CN 2019113901 W CN2019113901 W CN 2019113901W WO 2020155701 A1 WO2020155701 A1 WO 2020155701A1
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destruction
module
self
circuit
array
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PCT/CN2019/113901
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English (en)
French (fr)
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刘升
杜宏强
唐伟
韩延良
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西安奇维科技有限公司
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Publication of WO2020155701A1 publication Critical patent/WO2020155701A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
    • G06F21/79—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories

Definitions

  • the invention belongs to the field of electronic technology, and particularly relates to a high-reliability universal solid-state hard disk fast physical destruction circuit and method.
  • Soft destruction and physical destruction are two effective measures taken to protect the data security of SSDs under special circumstances. They are commonly used in the financial industry, defense industry and other industries with high confidentiality requirements. When unexpected situations occur, the destruction measures should be selected based on the data confidentiality requirements.
  • the soft destruction of solid-state hard drives refers to a form of non-physical destruction behavior in which the storage medium of the solid-state hard drives is erased and overwritten by sending commands from the host.
  • soft destruction will first erase all data on the storage medium, and then fill in all “0”, all “F” or random numbers to overwrite, making the original data unrecoverable, thereby achieving the purpose of protecting data security.
  • the erasing and overwriting operations will last for a certain period of time, and the length of time is related to the capacity of the solid state drive, ranging from tens of seconds to several minutes. If data confidentiality requires a strict upper limit on the data destruction time or requires that the destruction time be as short as possible, then soft destruction will no longer be suitable for large-capacity solid state drives.
  • the physical destruction of solid-state hard drives refers to the electrical, mechanical, or chemical physical structure destruction of the storage media on it through external signals.
  • physical destruction needs to destroy the internal wafer of the memory chip, which fundamentally guarantees the unrecoverability of data, and then achieves the purpose of protecting data security.
  • the physical destruction methods of domestic solid-state hard disks are limited by volume and safety requirements, and mainly electrical destruction.
  • the destruction principles of these electrical forms are different.
  • the patented methods or circuits are concerned, they cannot meet the user needs or objective requirements of safety and reliability, low power input, and extremely short time destruction.
  • For special industries, especially national defense construction invent a physical destruction method that has low input power, short destruction time, can adapt to various environmental conditions, does not reduce the reliability of the solid state disk itself, and can absolutely protect data. Must do.
  • the present invention aims to solve the above-mentioned problems and provide a high-reliability universal solid-state hard disk fast physical destruction circuit and method.
  • the high-reliability universal solid-state hard disk fast physical destruction circuit of the present invention includes a multi-channel DC-DC module and a FLASH array; the multi-channel DC-DC module is electrically connected with the FLASH array; and it also includes an input power limit module and a DC voltage
  • the conversion module, the self-destruction control module, and the switch tube; the input power limit module and the DC voltage conversion module are arranged in parallel; the input power limit module is electrically connected to the switch tube; the DC voltage conversion module, the self-destruction control module And the switch tube are electrically connected in sequence; the switch tube is electrically connected with the FLASH array.
  • the input power limit module is a constant current module or an electronic fuse
  • the switch tube is a MOSFET array or an IGBT array or a BJT array
  • the basic unit of the MOSFET array It is a PMOS with low on-resistance Rds(on).
  • the self-destruction control module is provided with an embedded chip; the embedded chip is an ARM chip or a single-chip microcomputer or a DSP chip or an FPGA chip.
  • the constant current module completes the conversion process of the destruction voltage and limits the input power.
  • the input voltage is 5V-40V
  • the output voltage is adjustable from 8V-36V
  • the current limiting point is 0.1A-7.0A
  • the start-up time is adjustable.
  • the DC voltage conversion module provides a normal working voltage for the self-destruction control module, and its input voltage is 2.7V-40V and has various circuit protection functions.
  • an isolation diode is arranged between the multi-channel DC-DC module and the FLASH array.
  • the input power limit module and the DC voltage conversion module receive the destruction voltage, and the output of the input power limit module is connected to the switch tube, and the DC voltage conversion module is independent Supply power to the self-destruction control module;
  • the self-destruction control module automatically runs the self-destruction program, outputs control signals to the switch tube, and controls the different transistors in the switch tube to turn on one by one according to the set parameters of the self-destruction program; when one of the transistors is turned on ,
  • the destruction voltage generated by the input power limit module is added to the corresponding FLASH power port of the FLASH array to burn the FLASH; after all the FLASH is burned, the physical destruction of the solid state drive is completed.
  • the input power limit module is a constant current module or an electronic fuse
  • the switch tube is a MOSFET array or an IGBT array or a BJT array
  • the MOSFET array The basic unit is PMOS with low on-resistance Rds(on).
  • the specific steps for controlling the different transistors in the MOSFET array to be turned on one by one according to the setting parameters of the self-destruction program are: the output pins of the self-destruction control module Connect to the base of the corresponding NPN transistor in the MOSFET array in turn.
  • the self-destruction control module outputs a high level, the NPN transistor is first saturated and turned on, the Vgs of the PMOS connected to it reaches the threshold voltage, DS is turned on, and the current is constant.
  • the converted energy of the module is poured into the corresponding FLASH power port through the PMOS, and then the FLASH is burned; when the output level is low, the NPN transistor is turned off, and the PMOS is turned off.
  • the FLASH destruction procedure ends and the next FLASH destruction procedure is entered.
  • an isolation diode is arranged between the multi-channel DC-DC module and the FLASH array; the isolation diode is used to power the physical destruction circuit and the solid-state hard disk normal working power supply circuit Isolation can prevent high-voltage backflow during the destruction process, and ensure that the voltage of the solid-state disk is normally working and the power supply line is stable.
  • the fast physical destruction circuit and method of the high-reliability universal solid-state hard disk of the present invention includes a constant current module, a DC voltage conversion module, a self-destruction control module, a MOSFET array and a FLASH array; the circuit design is simple, the number of peripheral components is small, and the volume is small, The destruction time is controllable and the destruction rate is high; it effectively solves the problems of excessive self-destruction circuit size, long self-destruction time, large input power, incomplete self-destruction, and too complex self-destruction circuit and low reliability in existing solutions , It has become a general-purpose physical destruction circuit and method that can be applied to various environmental conditions and various mainstream standard-size solid state hard disks, and meets the confidentiality requirements of the defense, financial and other industries for data security.
  • FIG. 1 is a schematic diagram of the fast physical destruction circuit structure of the high-reliability universal solid-state hard disk of the present invention.
  • the input power limit module adopts a constant current module
  • the switch tube adopts a MOSFET array
  • the high-reliability universal solid-state hard disk fast physical destruction circuit of the present invention includes a connector, a main controller, and a multi-channel DC-DC module And the FLASH array; the main controller and the multi-channel DC-DC module are electrically connected with the FLASH array; the main controller and the multi-channel DC-DC module are both connected with the connector; also includes a constant current module, a DC Voltage conversion module, self-destruction control module and MOSFET array; said constant current module and DC voltage conversion module are arranged in parallel; said constant current module is electrically connected to MOSFET array; said DC voltage conversion module, self-destruction control module and MOSFET The arrays are electrically connected in sequence; the MOSFET array is electrically connected with the FLASH array.
  • An isolation diode is arranged between the DC voltage conversion module and the FLASH array.
  • the overall circuit area does not exceed 400mm 2 and the height does not exceed 2mm, which can be applied to various mainstream standard-sized solid state drives; as shown in Figure 1, the solid state drive interacts with external devices through data transmission lines and is provided by external power supply lines.
  • the normal working voltage of the solid state disk and the dedicated power supply line provide the physical destruction voltage.
  • the constant current module in the physical destruction circuit completes the conversion process of the destruction voltage and limits the input power.
  • the constant current module has a rated input voltage of 28V and can work in the range of 5V-40V.
  • the output voltage (FLASH destruction voltage) is adjustable from 8V to 36V, the current limiting point is adjustable from 0.1A to 7.0A, and the start-up time can be programmed through an external capacitor. Make adjustments. When the FLASH power port breaks down and the short circuit, the output current of the module reaches the current limit point, and the constant current function is automatically activated, so that the input power of the physically destroyed power supply circuit is maintained in a controllable range and meets actual requirements.
  • a typical destruction input voltage range is 16V-28V, input current range is 1A-4A, and input power is 16W-112W. This value is much smaller than similar technical solutions without current limiting, which reduces the input power.
  • the destruction voltage and the stability of the solid state disk working voltage are not affected, so several solid state disks can be destroyed at the same time.
  • the DC voltage conversion module has a Buck-Boost function to provide normal operating voltage for the self-destruct control module.
  • the module has a wide input voltage range (2.7V-40V), high conversion efficiency (up to 90% efficiency under rated load conditions), few external components, and wide temperature range (meet -55°C-125°C working environment temperature) Distinguished features, it has the functions of over-voltage protection, over-current protection, over-temperature protection, under-voltage protection, etc., and is independent of the constant current module, which can stably and reliably provide the control module with normal operating voltage under various harsh environments, ensuring The destruction is carried out safely and reliably.
  • PMOS with low on-resistance Rds (on) is used as the basic unit of the MOSFET array, controlled by the control module, as a power channel for destroying FLASH.
  • the output pins of the control module are sequentially connected to the base of the corresponding NPN transistor in the array.
  • the control module When the control module outputs a high level, the NPN transistor is first saturated and turned on, the Vgs of the PMOS connected to it reaches the threshold voltage, and DS is turned on.
  • the energy converted by the constant current module is poured into the corresponding FLASH power port through the PMOS, and then the FLASH is burned; when the output level is low, the NPN transistor is turned off, and the PMOS is turned off.
  • the FLASH destruction program ends and the next FLASH is entered. Destruction procedure.
  • the control module takes ARM embedded chip as the core and is equipped with minimal peripheral circuits, which consumes very little energy.
  • the curing program of the control module can set the time and sequence of destroying the FLASH. In this embodiment, it is set to sequentially destroy 16 FLASHs within 1 second.
  • the destruction voltage enters the constant current module and the DC voltage conversion module inside the hard disk respectively, and connects the output of the constant current module to the MOSFET array, and the DC voltage conversion module separately supplies power to the self-destruction control module.
  • the self-destruction control module works normally, it will automatically run the solidified self-destruction program, output the control signal to the MOSFET array, and control the different MOSFETs to be turned on one by one in the order of the device number, and the turn-on time is 50ms.
  • the destruction voltage generated by the constant current module will be added to the power port of the corresponding storage medium (FLASH), and the FLASH will be burned. After all FLASH is burned, the physical destruction of the solid state drive is completed.
  • the circuit is simple in design, high in reliability, and small in size, and can be easily applied to various standard-size solid state drives.
  • the isolation diode is placed between the multi-channel DC-DC module and the FLASH array to isolate the physical destruction circuit and the normal working power supply circuit of the solid state drive, which can prevent high voltage backflow generated during the destruction process and ensure the stable voltage of the normal working power supply circuit of the solid state drive .
  • the self-destruction time of the physical destruction circuit described in this embodiment is controllable, and the corresponding destruction time is set according to the actual number of storage media of the solid state drive.
  • the minimum time is 50ms, which is far better than the existing physical destruction with self-destruction time of tens of seconds or even minutes.
  • the existence of the constant current module makes the destruction input voltage not fluctuate during the destruction and does not affect the stability of the overall system.

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Abstract

一种高可靠通用型固态硬盘快速物理销毁电路及方法，属于电子技术领域，包括多路DC-DC模块和FLASH阵列；其特征在于：还包括输入功率限制模块、直流电压变换模块、自毁控制模块和开关管；输入功率限制模块和直流电压变换模块并列设置；直流电压变换模块、自毁控制模块和开关管依次相电连接；所述开关管与FLASH阵列相电连接。电路设计简单，外围元件数目少且体积小，销毁时间可控，销毁率高；有效解决了现有方案中存在的自毁电路体积过大、自毁时间长、输入功率大、自毁不完全和自毁电路过于复杂且可靠性低的问题，成为可适用于各种环境条件、各种主流标准尺寸固态硬盘的通用型物理销毁电路及方法，满足国防、金融等行业对数据安全的保密需求。

Description

一种高可靠通用型固态硬盘快速物理销毁电路及方法 技术领域
本发明属于电子技术领域，尤其涉及一种高可靠通用型固态硬盘快速物理销毁电路及方法。
 背景技术
随着信息化技术的快速发展，全球数据总量持续增加。按照目前年增长率50%进行计算，到2020年，全球数据总量将达到40ZB，我国数据总量将达8.6ZB，占全球21%左右。在该种背景下，固态硬盘作为数据载体因其超高数据吞吐速率及超大容量已被各行各业广泛使用，但伴随而来的数据安全问题也日益突出。
软销毁及物理销毁是在特殊情况下为保护固态硬盘数据安全而采取的两种有效措施，常见于金融行业、国防行业及其它保密要求高的行业。当发生非预期情况时，应以数据保密性要求为标准来选择销毁措施。
固态硬盘的软销毁是指通过主机发送命令对固态硬盘的存储介质进行擦除和覆盖的一种非物理破坏形式的行为。通常软销毁会首先将存储介质上的数据全部擦除，再通过填入全“0”、全“F”或随机数进行覆盖，使得原始数据不可恢复，进而达到保护数据安全的目的。但是，由于固态硬盘存储介质自身的特性，擦除及覆盖操作会持续一定的时间，且时间长短与固态硬盘容量有关，范围在数十秒至数分钟之间。如果数据保密性要求对数据销毁时间有严格上限规定或要求销毁时间越短越好，那么软销毁将不再适用于大容量固态硬盘。
固态硬盘的物理销毁则是指通过外部信号触发对其上的存储介质进行电气、机械或者化学形式的物理结构破坏。一般而言，物理销毁需要达到损毁存储芯片内部晶圆的程度，这样从根本上保证了数据的不可恢复性，继而达到保护数据安全的目的。目前国内的固态硬盘物理销毁方法受限于体积和安全要求，以电气形式破坏为主。这些电气形式的破坏原理不一，就已申请专利的方法或电路来说，并不能满足安全可靠、低功率输入、极短时间销毁的用户需求或客观要求。对于特殊行业，尤其是国防建设，发明一种输入功率低、销毁时间短、可以适应于各种环境条件、不以降低固态盘自身可靠性为代价且能对数据进行绝对保护的物理销毁方法势在必行。
 技术问题
本发明旨在解决上述问题，提供一种高可靠通用型固态硬盘快速物理销毁电路及方法。
 技术解决方案
本发明所述高可靠通用型固态硬盘快速物理销毁电路，包括多路DC-DC模块和FLASH阵列；所述多路DC-DC模块与FLASH阵列相电连接；还包括输入功率限制模块、直流电压变换模块、自毁控制模块、和开关管；所述输入功率限制模块和直流电压变换模块并列设置；所述输入功率限制模块与开关管相电连接；所述直流电压变换模块、自毁控制模块和开关管依次相电连接；所述开关管与FLASH阵列相电连接。
本发明所述高可靠通用型固态硬盘快速物理销毁电路，所述输入功率限制模块为恒流模块或电子保险丝；所述开关管为MOSFET阵列或IGBT阵列或BJT阵列；所述MOSFET阵列的基本单元为低导通电阻Rds（on）的PMOS。
本发明所述高可靠通用型固态硬盘快速物理销毁电路，所述自毁控制模块内设置有嵌入式芯片；所述嵌入式芯片为ARM芯片或单片机或DSP芯片或FPGA芯片。
本发明所述高可靠通用型固态硬盘快速物理销毁电路，所述恒流模块完成对销毁电压的转换过程以及对输入功率的限制作用。其输入电压为5V-40V、输出电压为8V-36V可调、限流点为0.1A-7.0A，启动时间可调。
本发明所述高可靠通用型固态硬盘快速物理销毁电路，所述直流电压变换模块为自毁控制模块提供正常工作电压，其输入电压为2.7V-40V，并具有各种电路保护功能。
本发明所述高可靠通用型固态硬盘快速物理销毁电路，所述多路DC-DC模块与FLASH阵列之间设置有隔离二极管。
本发明所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，输入功率限制模块及直流电压变换模块接收到销毁电压，将输入功率限制模块的输出与开关管连接，直流电压变换模块则单独为自毁控制模块供电；自毁控制模块自动运行自毁程序，输出控制信号到开关管，控制开关管中不同晶体管按照自毁程序的设定参数逐一导通；当其中某一晶体管导通后，输入功率限制模块产生的销毁电压加到FLASH阵列对应的FLASH的电源端口，将该片FLASH烧毁；所有FLASH全部烧毁后，即完成固态硬盘的物理销毁。
本发明所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，所述输入功率限制模块为恒流模块或电子保险丝；所述开关管为MOSFET阵列或IGBT阵列或BJT阵列；所述MOSFET阵列的基本单元为低导通电阻Rds（on）的PMOS。
本发明所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，所述控制MOSFET阵列中不同晶体管按照自毁程序的设定参数逐一导通的具体步骤为：自毁控制模块的输出管脚依次与MOSFET阵列中相应NPN晶体管的基极连接，当自毁控制模块输出高电平时，首先使该NPN晶体管饱和导通，与之相连的PMOS的Vgs达到阈值电压，D-S导通，经恒流模块转化后的能量通过PMOS灌入对应FLASH电源端口，进而烧毁该FLASH；当输出电平为低电平时，NPN晶体管截至，PMOS关断，该路FLASH销毁程序结束，进入下一路FLASH销毁程序。
本发明所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，所述多路DC-DC模块与FLASH阵列之间设置有隔离二极管；使用隔离二极管对物理销毁电路与固态硬盘正常工作供电电路进行隔离，可防止销毁过程中产生的高压倒灌，保证固态盘正常工作供电线路的电压稳定。
 有益效果
本发明所述高可靠通用型固态硬盘快速物理销毁电路及方法，包括恒流模块、直流电压变换模块、自毁控制模块、MOSFET阵列和FLASH阵列；电路设计简单，外围元件数目少且体积小，销毁时间可控，销毁率高；有效解决了现有方案中存在的自毁电路体积过大、自毁时间长、输入功率大、自毁不完全和自毁电路过于复杂且可靠性低的问题，成为可适用于各种环境条件、各种主流标准尺寸固态硬盘的通用型物理销毁电路及方法，满足国防、金融等行业对数据安全的保密需求。
 附图说明
图1为本发明所述高可靠通用型固态硬盘快速物理销毁电路结构示意图。
 本发明的实施方式
下面结合附图及实施例对本发明所述高可靠通用型固态硬盘快速物理销毁电路及方法进行详细说明。
在本实施例中，输入功率限制模块采用恒流模块、开关管采用MOSFET阵列；本发明所述高可靠通用型固态硬盘快速物理销毁电路，包括连接器、主控制器、多路DC-DC模块和FLASH阵列；所述主控器和多路DC-DC模块均与FLASH阵列相电连接；所述主控器和多路DC-DC模块均与连接器相连接；还包括恒流模块、直流电压变换模块、自毁控制模块和MOSFET阵列；所述恒流模块和直流电压变换模块并列设置；所述恒流模块与MOSFET阵列相电连接；所述直流电压变换模块、自毁控制模块和MOSFET阵列依次相电连接；所述MOSFET阵列与FLASH阵列相电连接。直流电压变换模块与FLASH阵列之间设置有隔离二极管。整体电路面积不超过400mm 2、高度不超过2mm，可应用于各种主流标准尺寸的固态硬盘；如图1所示，固态硬盘通过数据传输线路与外部设备进行数据交互，同时由外部供电线路提供固态盘正常工作电压、专用供电线路提供物理销毁电压。
物理销毁电路中的恒流模块完成对销毁电压的转换过程以及对输入功率的限制作用。该恒流模块额定输入电压为28V，可工作于5V-40V范围内，输出电压（FLASH销毁电压）8V-36V可调、限流点0.1A-7.0A可调、启动时间可通过外部编程电容进行调整。当FLASH电源端口击穿短路后，该模块输出电流达到限流点，会自动启动恒流功能，从而使得物理销毁供电电路的输入功率保持在一个可控的范围，并满足实际要求。一个典型的销毁输入电压范围为16V-28V、输入电流范围1A-4A，输入功率16W-112W，该值远小于未进行限流的同类技术方案，降低了输入功率。另外，在销毁过程中，销毁电压以及固态盘工作电压的稳定性不受影响，故可同时销毁若干固态盘。
直流电压变换模块具备升-降压（Buck-Boost）功能，为自毁控制模块提供正常工作电压。该模块具备输入电压范围宽（2.7V-40V）、转换效率高（额定负载条件下可达90%以上效率）、外围元件少、温度范围宽（满足-55℃-125℃工作环境温度）的显著特点，又具有过压保护、过流保护、过温保护、欠压保护等功能，并与恒流模块相互独立，可在各种恶劣环境下稳定可靠地为控制模块提供正常工作电压，保证销毁动作安全、可靠的进行。
使用低导通电阻Rds（on）的PMOS作为MOSFET阵列的基本单元，受控于控制模块，作为销毁FLASH的功率通道。控制模块的输出管脚依次与阵列中相应NPN晶体管的基极连接，当控制模块输出高电平时，首先使得该NPN晶体管饱和导通，与之相连的PMOS的Vgs达到阈值电压，D-S导通，经恒流模块转化后的能量通过PMOS灌入对应FLASH电源端口，进而烧毁该FLASH；当输出电平为低电平时，NPN晶体管截至，PMOS关断，该路FLASH销毁程序结束，进入下一路FLASH销毁程序。
控制模块以ARM嵌入式芯片为核心，配备极简外围电路，自身消耗能量极小。控制模块的固化程序可以设置销毁FLASH的时间和次序，在本实施例中设置为1秒内依次销毁16片FLASH。
当物理销毁过程启动时，销毁电压分别进入硬盘内部恒流模块以及直流电压变换模块，将恒流模块的输出与MOSFET阵列连接，直流电压变换模块则单独为自毁控制模块供电。自毁控制模块正常工作后会自动运行已经固化的自毁程序，输出控制信号到MOSFET阵列，控制不同MOSFET按照器件位号顺序逐一导通，导通时间50ms。当其中某一MOSFET导通后，恒流模块产生的销毁电压会加到对应存储介质（FLASH）的电源端口，将该片FLASH烧毁。所有FLASH全部烧毁后，即完成固态硬盘的物理销毁。该电路设计简便、可靠性高，同时体积极小，可方便的应用于各种标准尺寸的固态硬盘。
隔离二极管放置于多路DC-DC模块与FLASH阵列之间，对物理销毁电路及固态硬盘正常工作供电电路进行隔离，可防止销毁过程中产生的高压倒灌，保证固态盘正常工作供电线路的电压稳定。
本实施例所述物理销毁电路自毁时间可控，根据固态硬盘实际存储介质数目设定相应销毁时间，最短低至50ms，远优于现有自毁时间达数十秒甚至数分钟的物理销毁方案；使用恒流模块控制销毁输入功率，一方面解决了现有销毁方案中销毁期间输入功率不可控的问题，另一方面可以使用最小输入功率（低至16W）达到物理销毁的目的，并且由于恒流模块的存在，使得销毁输入电压在销毁期间不产生波动，不影响整体系统的稳定性；同时通过销毁控制模块对所有存储介质（FLASH）进行逐一销毁，确保每片FLASH被充分击穿烧毁，避免了现有专利方案中同时销毁FLASH而产生的销毁不完全问题；所使用的元器件皆属低工作失效率型器件（可按GJB299C-2009进行计算），无现有专利方案中的超级电容、蓄电池等易失效组件，同时可工作于-55℃-+125℃温度范围内，整体电路设计裕量充足，特别适用于航空、航天等环境苛刻的国防行业中。

Claims (10)

  1. 一种高可靠通用型固态硬盘快速物理销毁电路，包括多路DC-DC模块和FLASH阵列；所述多路DC-DC模块与FLASH阵列相电连接；其特征在于：还包括输入功率限制模块、直流电压变换模块、自毁控制模块和开关管；所述输入功率限制模块和直流电压变换模块并列设置；所述输入功率限制模块与开关管相电连接；所述直流电压变换模块、自毁控制模块和开关管依次相电连接；所述开关管与FLASH阵列相电连接。
  2. 根据权利要求1所述高可靠通用型固态硬盘快速物理销毁电路，其特征在于：所述输入功率限制模块为恒流模块或电子保险丝；所述开关管为MOSFET阵列或IGBT阵列或BJT阵列；所述MOSFET阵列的基本单元为低导通电阻Rds（on）的PMOS。
  3. 根据权利要求2所述高可靠通用型固态硬盘快速物理销毁电路，其特征在于：所述自毁控制模块内设置有嵌入式芯片；所述嵌入式芯片为ARM芯片或单片机或DSP芯片或FPGA芯片。
  4. 根据权利要求3所述高可靠通用型固态硬盘快速物理销毁电路，其特征在于：所述恒流模块的输入电压为5V-40V、输出电压为8V-36V可调、限流点为0.1A-7.0A。
  5. 根据权利要求4所述高可靠通用型固态硬盘快速物理销毁电路，其特征在于：所述直流电压变换模块的输入电压为2.7V-40V。
  6. 根据权利要求1或5所述高可靠通用型固态硬盘快速物理销毁电路，其特征在于：所述多路DC-DC模块与FLASH阵列之间设置有隔离二极管。
  7. 一种根据权利要求1所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，其特征在于：输入功率限制模块及直流电压变换模块接收到销毁电压，将输入功率限制模块的输出与开关管连接，直流电压变换模块则单独为自毁控制模块供电；自毁控制模块自动运行自毁程序，输出控制信号到开关管，控制开关管中不同晶体管按照自毁程序的设定参数逐一导通；当其中某一晶体管导通后，输入功率限制模块产生的销毁电压加到FLASH阵列对应的FLASH的电源端口，将该片FLASH烧毁；所有FLASH全部烧毁后，即完成固态硬盘的物理销毁。
  8. 根据权利要求7所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，其特征在于：所述输入功率限制模块为恒流模块或电子保险丝；所述开关管为MOSFET阵列或IGBT阵列或BJT阵列；所述MOSFET阵列的基本单元为低导通电阻Rds（on）的PMOS。
  9. 根据权利要求8所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，其特征在于：所述控制MOSFET阵列中不同晶体管按照自毁程序的设定参数逐一导通的具体步骤为：自毁控制模块的输出管脚依次与MOSFET阵列中相应NPN晶体管的基极连接，当自毁控制模块输出高电平时，首先使该NPN晶体管饱和导通，与之相连的PMOS的Vgs达到阈值电压，D-S导通，经恒流模块转化后的能量通过PMOS灌入对应FLASH电源端口，进而烧毁该FLASH；当输出电平为低电平时，NPN晶体管截至，PMOS关断，该路FLASH销毁程序结束，进入下一路FLASH销毁程序。
  10. 根据权利要求7或9所述高可靠通用型固态硬盘快速物理销毁电路的销毁方法，其特征在于：所述多路DC-DC模块与FLASH阵列之间设置有隔离二极管；使用隔离二极管对物理销毁电路与固态硬盘正常工作供电电路进行隔离，防止销毁过程中产生的高压倒灌，保证固态盘正常工作供电线路的电压稳定。
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