WO2020153167A1 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

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Publication number
WO2020153167A1
WO2020153167A1 PCT/JP2020/000843 JP2020000843W WO2020153167A1 WO 2020153167 A1 WO2020153167 A1 WO 2020153167A1 JP 2020000843 W JP2020000843 W JP 2020000843W WO 2020153167 A1 WO2020153167 A1 WO 2020153167A1
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Prior art keywords
substrate
rotary table
ozone gas
processing
unit
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PCT/JP2020/000843
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English (en)
French (fr)
Japanese (ja)
Inventor
舟橋　倫正
正幸 房野
昌彦 小見山
貴大 戸田
勇治 河合
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株式会社ジェイ・イー・ティ
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Priority to CN202080010084.0A priority Critical patent/CN113330535A/zh
Priority to KR1020217026357A priority patent/KR20210118871A/ko
Publication of WO2020153167A1 publication Critical patent/WO2020153167A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for a semiconductor wafer or the like.
  • a resist film which is a photosensitive resin is widely used as a mask for etching or ion implantation for forming a device structure. That is, the resist film formed on the processed surface of the substrate is used as a mask for etching and ion implantation, and then the resist film is removed from the processed surface of the substrate.
  • Patent Document 1 As a method for removing the resist film, a method using a mixed solution of sulfuric acid and hydrogen peroxide (sulfuric acid/hydrogen peroxide) is widely used. Further, a method of using ozone (O 3 ) water, which has a small effect on the environment, has been proposed (see Patent Document 1). Furthermore, a method of removing the resist film with ozone or plasma, or after removing a strong deteriorated layer on the surface of the resist film with plasma, the remaining resist film is removed with a chemical solution, and then the treated surface is rinsed with pure water or the like. A method is known (see Patent Document 2).
  • the substrate When removing the resist film with ozone gas or plasma, the substrate is loaded into the processing apparatus, and ozone gas is blown or plasma is applied from above to the substrate placed with the processing surface facing upward. After the resist film is ashed by means of ashing, the substrate is transferred from the processing apparatus to the chemical solution processing apparatus, and the chemical solution processing apparatus performs the chemical solution treatment and the pure water cleaning.
  • the method of removing the resist film using ozone (O 3 ) water has a problem that the effect on the environment is small, but the removal rate of the resist film is low and the processing time for one substrate becomes long.
  • the method of removing the resist film using ozone gas or plasma as described above many foreign matters such as particles remain on the treated surface of the substrate, and eventually sufficient cleaning with a chemical solution or pure water is required. There is a problem that the processing time becomes long.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of obtaining a high removal rate of a resist film while reducing the amount of foreign matter such as particles remaining. To do.
  • a substrate processing apparatus is provided rotatably around a vertical axis and is provided on the rotary table that is rotated when processing a processing surface of a substrate, and the processing table faces downward.
  • a substrate holding unit that holds the substrate horizontally in a state of being separated from the upper surface of the turntable and that rotates integrally with the turntable, and is fixed below the processing surface of the substrate held by the turntable.
  • a spouting unit having one or a plurality of nozzles disposed in the central portion of the rotary table and spouting a supplied fluid to supply to the processing surface, and a jetting unit to the spouting unit during rotation of the rotary table.
  • an ozone gas supply unit that supplies ozone gas as the fluid is provided.
  • a substrate holding unit is provided on the rotary table in a state in which the processing surface of the substrate is directed downward and horizontal and is separated from the upper surface of the rotary table rotatable about the vertical axis.
  • the ozone gas is ejected from the central portion of the rotary table between the rotary table and the substrate having the processing surface facing downward while rotating with the rotary table, and the ozone gas is supplied to the process surface. It is possible to reduce the amount of foreign matter such as particles remaining while obtaining a high removal rate.
  • FIG. 9 is an explanatory diagram showing an example in which one nozzle head having two nozzles having different ejection directions, ejection amounts, and spreads of ejected fluid is provided as the ejection portion.
  • FIG. 5 is an explanatory diagram showing an example in which two nozzle heads having two nozzles having different ejection directions, ejection amounts, and spreads of ejected fluid are provided as ejection portions.
  • the substrate processing apparatus 10 removes a resist film (not shown) formed on the substrate 11.
  • the substrate processing apparatus 10 has a dry mode in which a resist film is removed using ozone gas, and a wet mode in which foreign substances such as particles remaining on the substrate 11 are removed using a processing liquid after the dry mode.
  • the substrate 11 is a semiconductor substrate such as a silicon wafer.
  • one surface of the substrate 11 on which various semiconductor elements and circuits are formed is the processing surface S1 to be processed, and the substrate processing apparatus 10 removes the resist film formed on this processing surface S1. To do.
  • the substrate processing apparatus 10 includes a housing 12, a rotary table 14, a loading mechanism 15, a jetting unit 16, a supplying unit 17, a halogen lamp heater 18, a discharging unit 19, and the like, and each unit is integrated by a control unit (not shown). Controlled.
  • the housing 12 has a cylindrical shape with a bottom, and an upper opening 12a that opens in a circular shape is provided in the upper portion.
  • the upper opening 12a is formed with a diameter larger than that of the substrate 11, and the substrate 11 is taken in and out of the housing 12 through the upper opening 12a. Further, as will be described later, in this example, the upper opening 12a is an intake port for taking in outside air into the housing 12.
  • a disk-shaped rotary table 14 is housed in the housing 12. Further, the substrate 11 is accommodated in the housing 12.
  • the rotary table 14 is rotatable about a vertical rotation axis Z and rotates with its upper surface horizontal.
  • the rotary table 14 is fixed to the upper end of the drive shaft 21.
  • the drive shaft 21 is coaxial with the rotary table 14.
  • the drive shaft 21 penetrates the bottom surface 12b of the housing 12 in its thickness direction (vertical direction), and is rotatably supported by a bearing 22 provided in an opening of the bottom surface 12b.
  • a pulley 23 is fixed to the lower part of the drive shaft 21.
  • a belt 26 is hung between the pulley 23 and a pulley 25 attached to the rotary shaft of the electric motor 24.
  • the drive shaft 21 and the rotary table 14 rotate integrally.
  • the rotary table 14 is continuously rotated from the start of the dry mode to the end of the wet mode.
  • the rotation speed of the rotary table 14 is adjusted by increasing or decreasing the speed of the electric motor 24.
  • the drive shaft 21 has a through hole 21a formed in the inside thereof so as to penetrate therethrough in the vertical direction. Further, a through hole 14a connected to the through hole 21a is formed in the center of the turntable 14. A cylindrical fixed shaft 28 is arranged in the through hole 14a and the through hole 21a. The fixed shaft 28 is fixed to the external frame and the like together with the housing 12 and the like. Therefore, the rotary table 14 and the drive shaft 21 rotate around the fixed shaft 28. The hollow portion 28a of the fixed shaft 28 is passed through a supply pipe portion 31 including supply pipes 31a to 31c (see FIG. 2).
  • a substrate holding portion 32 that holds the substrate 11 is provided on the upper surface of the turntable 14.
  • the substrate holding part 32 includes a plurality of holders 32 a provided on the peripheral edge of the turntable 14.
  • the plurality of holders 32a are arranged at predetermined intervals in the circumferential direction of the turntable 14.
  • Each holder 32a rotates integrally with the turntable 14. Although only two holders 32a are illustrated in FIG. 1, in reality, for example, six holders 32a are provided.
  • the holder 32a has, for example, a stepped portion formed at its tip, and the peripheral portion of the substrate 11 is placed on each of the stepped portions of each holder 32a.
  • the substrate 11 is supported by the substrate holder 32 in parallel or horizontally with the upper surface of the turntable 14 with a predetermined gap.
  • each holder 32a moves the substrate 11 in the radial direction, so that the substrate 11 is held by each holder 32a. In this way, the substrate 11 is held by the substrate holding portion 32 and fixed coaxially with the turntable 14. The substrate 11 thus fixed rotates together with the turntable 14.
  • the configuration of the substrate holding unit 32 described above is an example, and the present invention is not limited to this.
  • the substrate holding portion 32 includes a plurality of pins that abut the peripheral edge of the substrate 11 on the processing surface S1 side to define the gap between the substrate 11 and the turntable 14, and a plurality of pins that sandwich and fix the substrate 11 in the radial direction. May be configured.
  • the distance between the substrate 11 and the upper surface of the turntable 14 is set to about 25 mm, for example. This distance is preferably within the range of 1 mm to 50 mm, more preferably within the range of 10 mm to 30 mm. If the distance is 1 mm or more, the contact between the substrate 11 and the turntable 14 can be easily prevented. Further, by setting the interval to about 1 mm or several mm, it is possible to form a high-speed ozone gas flow between the substrate 11 and the rotary table 14 with a small supply amount. If the distance is 50 mm or less, it is easy to fill the space between the substrate 11 and the turntable 14 with high-concentration ozone gas. Further, if it is 10 mm or more, it is easy to make the gas flow of ozone gas uniform, and if it is 30 mm or less, it is easy to maintain a higher ozone gas concentration.
  • the substrate 11 is loaded and unloaded by the loading mechanism 15 through the upper opening 12a as described above.
  • the loading mechanism 15 takes out the substrate 11 to be processed from a storage cassette (not shown) and moves the substrate 11 to a position supported by the substrate holder 32.
  • the substrate 11 is stored in the storage cassette with the processing surface S1 facing upward. Therefore, the loading mechanism 15 takes out the substrate 11 from the storage cassette, and then turns the substrate 11 upside down so that the processing surface S1 faces downward. Further, the loading mechanism 15 takes out the processed substrate 11 from the inside of the housing 12, reverses the substrate 11 upside down to make the processing surface S1 face upward, and then returns the substrate 11 to the storage cassette.
  • a spouting part 16 for spouting the supplied fluid is arranged in the center of the turntable 14.
  • ozone gas for removing the resist film oxygen gas as a cooling gas for cooling the substrate 11, a chemical solution for removing foreign matters such as particles on the processing surface S1
  • pure water for cleaning the processing surface S1.
  • the chemical liquid and pure water are the processing liquids.
  • the ejection unit 16 is provided at a position lower than the processing surface S1 of the substrate 11 held by the substrate holding unit 32.
  • the supply pipe portion 31 has one end connected to the ejection portion 16 and the other end connected to the supply portion 17.
  • the supply unit 17 supplies ozone gas, oxygen gas, a chemical solution, and pure water. As a result, the ejection unit 16 selectively ejects ozone gas, oxygen gas, a chemical solution, and pure water.
  • a halogen lamp heater 18 is arranged above the housing 12.
  • the halogen lamp heater 18 is provided so as to radiate infrared rays downward.
  • the halogen lamp heater 18 is arranged above the upper opening 12a by the moving mechanism 34 to heat the substrate 11 and to move the substrate 11 into and out of the upper opening 12a. It moves in the horizontal direction between the retracted position retracted from above the upper opening 12a.
  • the halogen lamp heater 18 at the heating position is arranged at a height that forms a small gap with the peripheral edge of the upper opening 12a. Note that in FIG. 1, for convenience of illustration, the gap between the halogen lamp heater 18 and the peripheral edge of the upper opening 12a at the heating position is exaggeratedly drawn.
  • the halogen lamp heater 18 is moved in the horizontal direction to the heating position and the retracted position, but a position separated upward from the upper opening 12a is set to the retracted position so as not to interfere with the loading and unloading of the substrate 11.
  • the halogen lamp heater 18 may be moved vertically by the moving mechanism 34.
  • the halogen lamp heater 18 When performing various kinds of processing on the substrate 11, the halogen lamp heater 18 is moved to the heating position by the moving mechanism 34.
  • the halogen lamp heater 18 at the heating position heats the substrate 11 by irradiating the rear surface S2 (the surface opposite to the processing surface S1) of the substrate 11 immediately below it with infrared rays through the upper opening 12a.
  • the halogen lamp heater 18 is turned on when the substrate 11 is treated with ozone gas and emits infrared rays. Since there is no obstacle between the halogen lamp heater 18 and the back surface S2, the substrate 11 can be efficiently heated. By heating the substrate 11, oxidative decomposition of the resist film by ozone is promoted.
  • the halogen lamp heater 18 is used as the heater, but other various heaters may be used. Further, when the halogen lamp heater 18 can be arranged sufficiently away from the upper opening 12a, the moving mechanism 34 may be omitted and the position of the halogen lamp heater 18 may be fixed.
  • a guide cylinder 35 is provided inside the housing 12.
  • the guide cylinder 35 in this example has a tapered cylindrical shape whose upper portion gradually decreases in diameter upward.
  • the guide cylinder 35 is fixed to the housing 12, for example, and is adjusted so that its axis coincides with the rotation center of the rotary table 14. Further, the lower end of the guide cylinder 35 reaches the bottom surface 12b of the housing 12.
  • the rotary table 14 is arranged in the opening 35 a in the upper part of the guide cylinder 35.
  • the inner diameter of the opening 35a is slightly larger than the outer diameter of the rotary table 14, and the gap between the rotary table 14 and the guide cylinder 35 is made small.
  • the guide tube 35 forms an exhaust route with the housing 12.
  • the particles are prevented from being wound up due to the rotation of the rotary table 14, the particles are prevented from adhering to the substrate 11, and the treatment liquid or its vaporized substance is driven by the drive shaft 21 or the bearing 22. Etc. to prevent it from flowing to the mechanical part.
  • the discharge part 19 is composed of the upper opening 12a as the above-mentioned intake port, the discharge port 37 formed on the bottom surface 12b of the housing 12, the suction device 38, and the like.
  • a pump for example, is used as the suction device 38, and is connected to the discharge port 37 via a pipe 39.
  • the suction unit 38 When the suction unit 38 is driven, the discharge unit 19 causes a pressure difference that reduces the pressure of the discharge port 37 between the substrate 11 and the turntable 14 and the upper opening 12a.
  • various gases flowing out from between the substrate 11 and the rotary table 14, the processing liquid and its splashes, and further foreign matters such as particles generated by the processing are efficiently guided to the discharge port 37 and then outside the housing 12.
  • Discharge The suction unit 38 is provided with a separation mechanism, and separates the gas sucked from the discharge port 37 and the liquid and discharges them.
  • the outside air is taken into the housing 12 from the upper opening 12a, so that the air flow from the upper opening 12a to the discharge port 37 through between the housing 12 and the guide tube 35 (arrow F in FIG. 1). To form.
  • Foreign substances such as various gases, treatment liquids, and particles are efficiently guided to the discharge port 37 and discharged to the outside of the housing 12.
  • the intake port forming the discharge unit 19 is the substrate. It may be provided at a position higher than the processing surface S1 of the substrate 11 held by the holder 32. Further, from the viewpoint of guiding the gas, liquid, particles, etc. flowing out between the substrate 11 and the turntable 14 to the discharge port 37, the discharge port 37 may be provided at a position lower than the upper surface of the turntable 14.
  • the upper opening 12a is hermetically closed during processing, as a loading port at a position higher than the processing surface S1 of the substrate 11 held by the substrate holding portion 32 on the side surface of the housing 12.
  • One or more openings may be provided.
  • the outside air may be introduced into the housing 12 through an opening at one end of a pipe that penetrates the housing 12.
  • the opening at one end of the pipe may be the processing surface S1 of the substrate 11 held by the substrate holding portion 32.
  • the position should be higher than the above.
  • the outlet 37 may be provided at a position lower than the upper surface of the rotary table 14 on the side surface of the housing 12.
  • the gas and the liquid may be separated and discharged to the outside of the housing 12.
  • the upper opening 12a is hermetically closed, the upper opening 12a is closed with a glass having a high infrared ray transmittance, for example, quartz glass to heat the substrate 11 from the outside of the housing 12 using the halogen lamp heater 18 or the like. can do.
  • a glass having a high infrared ray transmittance for example, quartz glass to heat the substrate 11 from the outside of the housing 12 using the halogen lamp heater 18 or the like. can do.
  • nozzle heads 41 fixed to the upper end of the fixed shaft 28 and arranged above the rotary table 14 are provided as the ejection unit 16.
  • Each nozzle head 41 is arranged so as to sandwich the rotation axis Z of the rotary table 14.
  • the nozzle head 41 has a truncated cone shape having a side surface 41a inclined so as to face upward, and a hollow portion 41b is formed inside thereof.
  • a nozzle 43 that ejects the fluid supplied to the hollow portion 41b toward the processing surface S1 of the substrate 11 is formed on the side surface 41a.
  • one nozzle 43 is formed in each nozzle head 41 at a portion of the side surface 41a facing the rotation axis Z.
  • Each nozzle 43 ejects gas or liquid diagonally upward.
  • the supply unit 17 has an ozone gas supply unit 17a, an oxygen gas supply unit 17b, a chemical solution supply unit 17c, and a pure water supply unit 17d.
  • the ozone gas supply unit 17a supplies the ozone gas to the hollow portion 41b of each nozzle head 41 via the supply pipe 31a in the dry mode. Ozone gas is supplied to ash and remove the resist film as described above.
  • the oxygen gas supply unit 17b supplies the oxygen gas to the hollow portion 41b of each nozzle head 41 through the same supply pipe 31a as the ozone gas. Oxygen gas is supplied in the dry mode after the supply of ozone gas is stopped. This oxygen gas is used as a cooling gas for cooling the substrate 11 heated to a high temperature to a temperature suitable for the subsequent wet mode processing.
  • the ozone gas supply unit 17a and the oxygen gas supply unit 17b are used in this example, the ozone gas supply unit 17a is configured by an ozonizer for ozone-converting the oxygen gas supplied from the oxygen gas supply source.
  • the part 17b may be omitted.
  • the oxygen gas as the cooling gas can be supplied from the ozone gas supply unit 17a.
  • the cooling gas is not limited to oxygen gas, but an inert gas (for example, nitrogen gas) or the like may be used.
  • a cooling gas other than oxygen gas it is preferable to provide a supply pipe different from the supply pipe 31a for supplying ozone gas, and use this to supply the cooling gas to the nozzle head 41.
  • the chemical liquid supply unit 17c supplies the chemical liquid to the hollow portion 41b of each nozzle head 41 via the supply pipe 31b in the wet mode.
  • the chemical liquid for example, SC1 (Standard Clean 1) which is a mixed aqueous solution of hydrogen peroxide and ammonia for removing particles on the treated surface S1 is used.
  • the pure water supply unit 17d supplies pure water to the hollow portion 41b of each nozzle head 41 via the supply pipe 31c in order to clean (rinse pure water) the processing surface S1 of the substrate 11. The pure water is supplied in the wet mode after the supply of the chemical liquid is stopped.
  • each nozzle head 41 and the supply unit 17 to each nozzle head 41 so that the ejection direction for uniformly supplying a fluid such as ozone gas or a chemical solution to the processing surface S1, the ejection amount of the fluid, and the spread of the ejected fluid are provided.
  • the amount of fluid supplied from is adjusted.
  • the ozone gas supply unit 17a, the oxygen gas supply unit 17b, the chemical solution supply unit 17c, and the pure water supply unit 17d may be connected to each nozzle head 41 via a common supply pipe. It is possible to prevent the processing liquid remaining in the supply pipe from being jetted from the nozzle 43 by the supply of ozone gas, or to omit a mechanism for preventing it, and to independently adjust the supply amount of each nozzle head 41. Therefore, it is preferable to use separate supply pipes as described above.
  • the suction device 38 is constantly driven, and the inside of the housing 12 is suctioned.
  • the halogen lamp heater 18 is moved to the retracted position by the moving mechanism 34.
  • the substrate 11 to be processed is taken out from the cassette by the loading mechanism 15 (step ST1). Since the substrate 11 is housed in the cassette so that the processing surface S1 faces upward, the loading mechanism 15 inverts the taken-out substrate 11 by 180° so that the processing surface S1 faces downward (step ST2).
  • the reversed substrate 11 is moved by the loading mechanism 15 onto the rotary table 14 in the housing 12 through the upper opening 12a, and the peripheral edge of the substrate 11 is placed on the step of each holder 32a.
  • each holder 32a is actuated, and the substrate 11 is held by each holder 32a (step ST3).
  • the substrate 11 is fixed on the rotary table 14 with the processing surface S1 facing downward, with a predetermined distance from the upper surface of the rotary table 14, and with the processing surface S1 parallel to the upper surface of the rotary table 14. To be done.
  • the halogen lamp heater 18 is moved to the heating position by the moving mechanism 34. After that, the electric motor 24 is driven, and the rotary table 14 starts rotating integrally with the substrate 11 (step ST4).
  • the ozone gas supply unit 17a starts supplying ozone gas (step ST5).
  • the flow rate of the ozone gas is adjusted to fall within a range of 2 L (liter)/minute to 20 L/minute, for example.
  • the halogen lamp heater 18 is turned on (step ST6).
  • the substrate 11 is heated to a predetermined temperature from the rear surface S2 side.
  • the temperature of the substrate 11 is set in the range of 150° C. to 450° C., for example.
  • the ozone gas from the ozone gas supply unit 17a is supplied to each nozzle head 41 via the supply pipe 31a. Thereby, the ozone gas is ejected from the nozzle 43 of each nozzle head 41 toward the processing surface S1 of the substrate 11.
  • the ozone gas ejected from the nozzle 43 flows toward the outer circumference of the substrate 11 while spreading in the circumferential direction as the substrate 11 rotates. As a result, the entire processing surface S1 is exposed to the ozone gas ejected from the nozzle 43.
  • that portion is oxidatively decomposed by ozone and gradually decomposed and removed.
  • Ozone gas which is a gas, has a lower thermal conductivity than a liquid such as ozone water, so that the temperature of the substrate 11 is less likely to drop and the oxidative decomposition of the resist film is effectively promoted.
  • the gas When the ozone gas reacts with the resist film and the gas containing unreacted ozone reaches the outer circumference of the substrate 11, the gas is guided to the discharge port 37 by the pressure difference and is discharged. Therefore, the gas generated by the reaction of ozone with the resist film and the unreacted ozone gas do not leak to the outside of the housing 12 from the upper opening 12a.
  • processing surface S1 is facing downward, it is difficult for foreign matter such as particles generated on the processing surface S1 to remain on the processing surface S1. Particles and the like separated from the processing surface S1 drop on the rotary table 14 or are carried to the outside of the substrate 11 together with the above-mentioned gas, and are discharged from the discharge port 37.
  • the halogen lamp heater 18 is turned off (step ST8), the supply of ozone gas is stopped, and the oxygen gas from the oxygen gas supply unit 17b is stopped. Is started to be supplied (step ST9).
  • the predetermined processing time is set in advance as the time required to completely remove the resist film. As described above, the treated surface S1 is facing downward, and foreign matters such as particles are hard to remain on the treated surface S1, so that at the stage where the treatment is finished by the ozone gas, the foreign matters such as particles remain on the treated surface S1.
  • the oxygen gas from the oxygen gas supply unit 17b is supplied to each nozzle head 41 via the supply pipe 31a and is ejected from the nozzle 43 of each nozzle head 41.
  • the substrate 11 is efficiently cooled to a specified temperature suitable for the next wet mode processing.
  • the substrate 11 and the turntable 14 are rotating, by supplying oxygen gas between them, foreign matters such as particles adhered and peeled off the inner wall of the housing 12 are separated between the substrate 11 and the turntable 14. It is suppressed to be drawn into. As a result, foreign substances such as particles are prevented from adhering to the processing surface S1 when the substrate 11 is cooled.
  • step ST10 When the substrate 11 is cooled to a specified temperature (for example, about 100° C.) (“YES” in step ST10), the supply of oxygen gas is stopped (step ST11) and the mode shifts to the wet mode.
  • the temperature of the substrate 11 is measured by, for example, a non-contact temperature sensor (not shown). It should be noted that the wet mode may be shifted to when the time required for cooling the temperature of the substrate 11 to the specified temperature has elapsed.
  • step ST12 chemical treatment is performed to remove particles (step ST12). Note that the rotation of the substrate 11 is continued even in the wet mode.
  • the chemical liquid from the chemical liquid supply unit 17c is supplied to each nozzle head 41 via the supply pipe 31b.
  • the chemical solution is heated according to its type.
  • the supplied chemical liquid is ejected from the nozzle 43 of each nozzle head 41 toward the processing surface S1 of the substrate 11.
  • the chemical liquid is supplied to the processing surface S1, and the chemical liquid flows toward the outer periphery of the substrate 11 while spreading on the processing surface S1 in the circumferential direction by the rotation of the substrate 11. In this way, the chemical liquid is supplied to the entire surface of the processing surface S1, and the particles on the processing surface S1 are removed.
  • the amount of foreign matter such as particles remaining on the treated surface S1 is small, so that the treatment time of the chemical liquid can be shortened.
  • SC1 when the chemical solution is SC1, SC1 is heated to 40° C. to 80° C. and supplied, and the supply of the chemical solution is stopped after a processing time of 10 seconds to 60 seconds.
  • a pure water rinse treatment (step ST13) is performed. Pure water is supplied from the pure water supply unit 17d to each nozzle head 41 through the supply pipe 31c, and the pure water is jetted from the nozzles 43 of each nozzle head 41 toward the processing surface S1 of the substrate 11. As a result, pure water is supplied to the processing surface S1, and the pure water flows toward the outer circumference of the substrate 11 while spreading in the circumferential direction on the processing surface S1 due to the rotation of the substrate 11. In this way, pure water is supplied to the entire surface S1 to be cleaned. The supply of pure water is stopped after a lapse of a predetermined time.
  • the chemical liquid and pure water are directly supplied from the nozzle 43 or dropped from the processing surface S1 and supplied to the upper surface of the rotary table 14, and spread on the upper surface of the rotary table 14.
  • the upper surface of the turntable 14 is also cleaned of foreign matter such as adhering particles and cleaning with pure water.
  • each holder 32a is also cleaned of foreign matter such as adhered particles and purified water.
  • the chemical liquid and pure water scattered from the rotating substrate 11 and the rotary table 14 collide with the inner wall of the housing 12. Therefore, foreign substances such as particles attached to the inner wall of the housing 12 are removed and cleaning with pure water is performed. In this manner, the substrate processing apparatus 10 self-cleans the inside of the housing 12 simultaneously with the processing of the substrate 11 in the wet mode.
  • the rotation speed of the rotary table 14, that is, the rotation speed of the substrate 11 is increased, and the substrate 11 is spin-dried (step ST14).
  • the pure water attached to both sides of the substrate 11 is blown off by the centrifugal force, and the substrate 11 is dried.
  • the upper surface of the turntable 14 and each holder 32a are similarly dried.
  • the chemical liquid and the pure water flowing out from the substrate 11 and the rotary table 14 and the chemical liquid and the pure water attached to the inner wall of the housing 12 and flowing down by the chemical liquid treatment, the pure water rinse treatment, and the spin drying are discharged to the outlet 37. It is sucked and discharged. Further, even if fine droplets of the chemical liquid and pure water are generated, the droplets are guided to the discharge port 37 by the airflow from the upper opening 12a. Therefore, the chemical liquid and the pure water do not leak from the upper opening 12a.
  • step ST15 When the spin drying is completed, the electric motor 24 is stopped and the rotation of the rotary table 14 and the substrate 11 is stopped (step ST15). After the holding of the substrate 11 by the holder 32a is released (step ST16), the substrate 11 is taken out through the upper opening 12a by the loading mechanism 15 (step ST17). The loading mechanism 15 reverses the substrate 11 so that the processing surface S1 faces upward (step ST18) and stores the substrate 11 in the cassette (step ST19).
  • the process for one substrate 11 is completed, and after that, the process for a new substrate 11 is performed in the same procedure. Since the self-cleaning of the inside of the rotary table 14 and the housing 12 is completed as described above, a new processing of the substrate 11 can be immediately performed.
  • the above substrate processing apparatus 10 performs the processing with ozone gas and the processing with the processing liquid in the same housing 12 as described above, it is not necessary to provide a housing or a device for each processing. A transfer device for transferring substrates between devices is also unnecessary.
  • the ejection part in the above example is composed of two nozzle heads
  • the composition of the ejection part is not limited thereto, and may be one or three or more, and the number of nozzles may be one or more. ..
  • four nozzle heads 54 are provided as the ejection portion 16 on the upper end of the fixed shaft 28, and each nozzle head 54 is provided with one nozzle 43.
  • the direction of jetting the fluid in each nozzle 43 is offset by 90°.
  • one nozzle head 55 is provided as the ejection unit 16, and the nozzle head 55 is provided with two nozzles 43a and 43b in which the ejection direction of the fluid, the ejection amount, and the spread of the ejected fluid are different.
  • the nozzle 43a has a small ejection amount and the spread of the ejected fluid
  • the nozzle 43b has a large ejection amount and the spread of the ejected fluid.
  • two nozzle heads 56 serving as the ejection unit 16 are provided with two nozzles 43c to 43f, two nozzles in total, and the ejection direction of the fluid of the nozzles 43c to 43f, the ejection amount, and the spreading of the ejected fluid. Are different from each other.
  • the ejection portion is arranged on the rotary table, but it may be arranged below the processing surface of the substrate.
  • the surface on which the nozzle is formed is at the same height or lower position as the upper surface of the rotary table. May be Further, a nozzle for ejecting a gas such as ozone gas and a nozzle for ejecting the treatment liquid may be separately provided.
  • one guide cylinder is provided in the housing, but a plurality of guide cylinders having different upper opening heights are provided so that the rotation center of the rotary table coincides with each axis and
  • the table may be configured to move up and down so as to be rotatable within the openings formed in the upper portions of the guide cylinders.
  • a plurality of airflow paths are formed between the outermost guide cylinder and the housing and between the guide cylinders.
  • Substrate Processing Device 11 Substrate 12 Housing 12a Upper Opening 14 Rotating Table 16 Spouting Part 17 Supplying Part 19 Discharging Part 32 Substrate Holding Part 43 Nozzle

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PCT/JP2020/000843 2019-01-24 2020-01-14 基板処理装置及び基板処理方法 WO2020153167A1 (ja)

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JP2004538635A (ja) * 2001-08-06 2004-12-24 セミトゥール・インコーポレイテッド 半導体ウエハなどのワークピースを取り扱う処理および装置
JP2005228790A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp レジスト除去方法およびレジスト除去装置ならびに半導体ウエハ
JP2012209559A (ja) * 2009-12-18 2012-10-25 Jet Co Ltd 基板処理装置

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JP2009218548A (ja) * 2008-02-12 2009-09-24 Tsukuba Semi Technology:Kk 高ドーズインプラ工程のレジスト除去方法及びレジスト除去装置
JP5731972B2 (ja) 2009-06-03 2015-06-10 倉敷紡績株式会社 ヒドロキシルラジカル含有水供給方法、及び、ヒドロキシルラジカル含有水供給装置

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Publication number Priority date Publication date Assignee Title
JP2004538635A (ja) * 2001-08-06 2004-12-24 セミトゥール・インコーポレイテッド 半導体ウエハなどのワークピースを取り扱う処理および装置
JP2005228790A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp レジスト除去方法およびレジスト除去装置ならびに半導体ウエハ
JP2012209559A (ja) * 2009-12-18 2012-10-25 Jet Co Ltd 基板処理装置

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