WO2020150964A1 - Résonateur fendu avec différents rapports d'impédance - Google Patents

Résonateur fendu avec différents rapports d'impédance Download PDF

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Publication number
WO2020150964A1
WO2020150964A1 PCT/CN2019/072989 CN2019072989W WO2020150964A1 WO 2020150964 A1 WO2020150964 A1 WO 2020150964A1 CN 2019072989 W CN2019072989 W CN 2019072989W WO 2020150964 A1 WO2020150964 A1 WO 2020150964A1
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WO
WIPO (PCT)
Prior art keywords
resonator
sub
resonators
split
potential
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PCT/CN2019/072989
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English (en)
Chinese (zh)
Inventor
张孟伦
庞慰
孙晨
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天津大学
诺思(天津)微系统有限责任公司
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Priority to PCT/CN2019/072989 priority Critical patent/WO2020150964A1/fr
Publication of WO2020150964A1 publication Critical patent/WO2020150964A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters

Definitions

  • the invention relates to a resonator, in particular to a split resonator with different impedance ratios.
  • the thin film bulk wave resonator made by the longitudinal resonance of the piezoelectric film in the thickness direction has become a viable alternative to surface acoustic wave devices and quartz crystal resonators in mobile phone communications and high-speed serial data applications.
  • the RF front-end bulk wave filter/duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, and strong ESD resistance. With the current increasing requirements for the power capacity of electronic devices such as filters and resonators in communications and other fields, the heat generation of filters and resonators has increased significantly.
  • the high temperature caused by high heat will cause the device Q value and the electromechanical coupling coefficient to drop significantly; in addition, the high temperature will also cause the frequency of the resonator to drift; in addition, the high temperature will also reduce the overall life of the device.
  • Many of the above problems eventually lead to severe degradation of the performance parameters of the filter composed of resonators, such as bandwidth, insertion loss, roll-off characteristics, and out-of-band suppression.
  • the traditional method to deal with the heating problem is to increase the area of the resonator. This method can effectively reduce the power density in the resonator within a certain power range, thereby reducing the working temperature of the resonator.
  • simply relying on the method of increasing the area can no longer meet the requirements of the current resonator for power capacity, and further improvements to the traditional structure are needed.
  • the purpose of the present invention is to provide a split resonator with different impedance ratios, which not only increases the equivalent area, but also increases the perimeter-area ratio of the resonator, thereby improving the heat dissipation performance of the resonator and the overall electronic device Power Capacity.
  • the bridge structure helps suppress the high-order harmonics generated by the unbalance of the circuit, and improves the circuit's ability to suppress nonlinear effects.
  • the present invention provides the following technical solutions:
  • the split resonator is a resonator group composed of a plurality of sub-resonators; the resonator group includes more than two parallel branches, each parallel branch There are two or more series-connected sub-resonators; a single sub-resonator with a bridge or a group of sub-resonators with a bridge between the series connection points in the adjacent parallel branches.
  • the bridged sub-resonator group includes more than two parallel branches, each parallel branch includes more than two series-connected sub-resonators, and the series connection points in the adjacent parallel branches A single sub-resonator with a bridge between them or a group of sub-resonators with the bridge.
  • one sub-resonator is short-circuited, or multiple non-adjacent sub-resonators are short-circuited.
  • the resonator group includes two parallel branches, wherein the first parallel branch includes a first sub-resonator and a second sub-resonator that are connected in series and whose C-axis of the piezoelectric layer is opposite to each other.
  • the parallel branch contains a third sub-resonator and a fourth sub-resonator connected in series and the piezoelectric layer C-axis points opposite; at the series connection point of the first sub-resonator and the second sub-resonator, it resonates with the third sub-resonator Between the series connection point of the fourth sub-resonator and the fourth sub-resonator, there is a fifth sub-resonator; the C-axis of the piezoelectric layer of the first sub-resonator and the third sub-resonator are opposite, and they are located in the fifth sub-resonator The first side of the device; the C-axis of the piezoelectric layer of the second sub-resonator and the fourth sub-resonator point to opposite directions, and they are located on
  • the sub-resonators on both sides of one end of the bridge structure and located on the same parallel branch have different The piezoelectric layer C-axis points; the sub-resonators on the same side of the bridge structure and located in different parallel branches have different piezoelectric layer C-axis directions.
  • each sub-resonator of the plurality of sub-resonators maintains acoustic isolation.
  • the width of the gap between the upper electrode or the lower electrode or the piezoelectric layer of two adjacent sub-resonators is not less than half an acoustic wave wavelength, or not less than 2 acoustic wave wavelengths.
  • the split resonator has two pins, the two pins occupy a first potential and a second potential respectively; one side of each sub-resonator has the first potential and The other side has the second potential.
  • the C axis of the piezoelectric layer of each sub-resonator is directed from the first potential to the second potential, or from the second potential to the first potential.
  • the split resonator is provided with two sets of equipotential interconnection, wherein the first set of equipotential interconnection is composed of the electrodes of the sub-resonator at the first potential and the electrical connections between these electrodes, and the second set The equipotential interconnection consists of the electrodes of the sub-resonator at the second potential and the electrical connections between these electrodes.
  • the upper electrode and the lower electrode are made of metal, a multilayer composite material or alloy of metal.
  • the metal includes at least one of the following: molybdenum, ruthenium, gold, magnesium, aluminum, tungsten, titanium, chromium, iridium, osmium, platinum, gallium, and germanium.
  • the piezoelectric layer material includes aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, and the foregoing materials doped with a certain proportion of rare earth elements.
  • the traditional single resonator in the electronic device is split into a polygonal resonator group composed of several polygonal sub-resonators, and a bridge structure is added to suppress high-order harmonics, which not only increases the equivalent area, but also It can also increase the perimeter area ratio of the resonator, thereby improving the heat dissipation performance of the resonator and the overall power capacity of the electronic device.
  • Another advantage of the split resonator is that it helps to make the resonator layout more compact, so as to make rational use of space and reduce device size.
  • the bridge structure of the present invention has different operation modes under different voltage frequencies at its two ends, which are all helpful to improve the balance of the circuit, thereby helping to suppress high-order harmonics.
  • FIG. 1A is a schematic diagram of the structure of a first split resonator according to an embodiment of the present invention
  • 1B is a circuit diagram of the first split resonator according to an embodiment of the present invention.
  • FIG. 2 is a circuit diagram of another split resonator according to an embodiment of the present invention.
  • Fig. 3 is a schematic diagram of another split resonator according to an embodiment of the present invention.
  • Fig. 4 is a schematic diagram of yet another split resonator according to an embodiment of the present invention.
  • Fig. 5 is a schematic diagram of yet another split resonator according to an embodiment of the present invention.
  • Fig. 6 is a schematic diagram of another split resonator according to an embodiment of the present invention.
  • Fig. 7 is an explanatory diagram of the relationship between equipotential connection and C-axis direction related to the present invention.
  • FIG. 8 is a schematic diagram of the relationship between the impedance of the bridge structure and the voltage frequency according to the embodiment of the present invention.
  • 9A is an equivalent circuit diagram when the bridge structure in the split resonator is in a short-circuit state according to an embodiment of the present invention.
  • 9B is an equivalent circuit diagram when the bridge structure in the split resonator according to the embodiment of the present invention is in an open state.
  • FIG. 1A is a schematic diagram of the structure of a first split resonator according to an embodiment of the present invention.
  • the traditional single resonator is split into five sub-resonators.
  • the five sub-resonators are the first resonator R101, the second resonator R102, and the third resonator in the figure.
  • FIG. 1A shows the specific connection mode of the 5-resonator, which will be described in detail below.
  • the upper electrode of the first resonator R101 has a pin C100, and the upper electrode of the first resonator R101 and the upper electrode of the second resonator R102 are electrically connected to C101; the lower electrode of the first resonator R101 and the fifth resonator R105
  • the lower electrode of the second resonator R102 is electrically connected to C103; the lower electrode of the second resonator R102 and the upper electrode of the fifth resonator R105 are electrically connected to C105;
  • the lower electrode of the fifth resonator R105 is electrically connected to the lower electrode of the third resonator R103 C104;
  • the upper electrode of the fifth resonator R105 and the lower electrode of the fourth resonator R104 are electrically connected C106;
  • the upper electrode of the third resonator R103 and the upper electrode of the fourth resonator R104 are electrically connected C102, the fourth resonator
  • the upper electrode of R104 has pin C107.
  • FIG. 1B is the circuit diagram of the first split resonator according to the embodiment of the present invention.
  • R101 and R103 are connected in series to form the first branch
  • R102 and R104 are connected in series to form the second branch.
  • the first branch and the second branch are connected in parallel.
  • the circuit is called the first parallel branch
  • the second branch is called the second parallel branch.
  • R105 is bridged between the series connection points in the first and second parallel branches.
  • Fig. 2 is a circuit diagram of another split resonator according to an embodiment of the present invention.
  • the split resonator includes 8 sub-resonators R201-R208, where R201, R203, and R205 are connected in series to form the first parallel branch, and R202, R204, and R206 are connected in series to form the second parallel branch. R207 and R208 are bridged between the two parallel branches.
  • the splitting principle of the split resonator shown in FIG. 2 is equivalent impedance splitting, that is, to ensure that the equivalent impedance of the resonator group after splitting is equal to the impedance of the original single resonator (for example, 50 ⁇ ).
  • the symmetry of the system can be improved, thereby suppressing higher harmonics.
  • the choice of the position of the two ends of the bridge structure (that is, the choice between which two sub-resonators in series) is based on the impedance ratio on both sides of the first end of the bridge structure and the impedance ratio on both sides of the second end of the bridge structure The impact of the difference between the two is determined by the principle of reduction.
  • the "impedance ratio on both sides” here should be understood as the ratio of the sum of the impedance of the first side of the two sides to the sum of the impedance of the second side of the two sides.
  • FIG. 3 is a schematic diagram of another split resonator according to the embodiment of the present invention.
  • the R507 in the bridge structure Is to reduce the influence of the difference between Z501/(Z503+Z505) and Z502/(Z504+Z506).
  • some bridge structures can be optionally omitted.
  • R202 and R206 can be removed, and the original resonator position can be short-circuited with a wire; or R204 can be removed and the original resonator position can be short-circuited with a wire Short. That is, in a certain parallel branch, one or multiple non-adjacent sub-resonators may be shorted.
  • Fig. 4 is a schematic diagram of another split resonator according to an embodiment of the present invention. As shown in Fig. 4, it includes 3 parallel branches. Each parallel branch has 2 sub-resonators and 2 bridges. The sub-resonator.
  • FIG. 5 is a schematic diagram of another split resonator according to an embodiment of the present invention. As shown in FIG. 5, it includes 3 parallel branches, and each parallel branch has 3 series-connected sub-resonators. Up to 4 bridged sub-resonators can be set, as shown in the figure.
  • a sub-resonator group can be used instead.
  • the sub-resonator group is a series-parallel connection of multiple sub-resonators.
  • the sub-resonator group can also include a bridge structure, for example, as shown in FIG. 6, which is a schematic diagram of another split resonator according to an embodiment of the present invention.
  • the resonator B600 in FIG. 6 shows an optional form of the resonator B600 in the figure, and may also adopt other split resonator forms in the embodiment of the present invention.
  • the resonator group B600 (which includes R605-R609) in FIG. 6 may also be a resonator group, and may include the bridge structure in the embodiment of the present invention. It can be seen that this is a cyclic method. , Forming a "fractal" structure.
  • Fig. 7 is an explanatory diagram of the relationship between equipotential connection and C-axis direction related to the present invention.
  • Rsub1-Rsub4 have upper electrodes EH1-EH4, lower electrodes EL1-EL4, and piezoelectric layers A1-A4, respectively; the piezoelectric layers of the four sub-resonators have C-axis pointing to C1-C4, respectively.
  • the electrodes of the sub-resonators are equipotentially connected by conductors (solid lines F1, F2 and F3 and dashed lines D1, D2 and D3).
  • EH1-F1-EL2-F2-EH3-F3-EH4 forms a set of equipotential connections (here called A), and EL1-D1-EH2-D2-EL3-D3-EL4 forms another set of equipotential connections (called As B). If A occupies the first potential, then B occupies the second potential. After the equipotential connection is established, all the connected electrodes in A have the first potential, and correspondingly, all the connected electrodes in B have the second potential.
  • the split resonator has two pins, and the two pins occupy the first potential and the second potential respectively.
  • One side of each sub-resonator has the aforementioned first potential and the other side has the aforementioned second potential. That is, each split resonator contains only two sets of equipotential connections.
  • the C axis of the piezoelectric layer of each sub-resonator is directed from the first potential to the second potential, or from the second potential to the first potential.
  • the direction of the C-axis of the piezoelectric layer of at least one sub-resonator is opposite to the direction of the C-axis of the piezoelectric layer of at least one of the remaining sub-resonators.
  • the principle of resonator splitting is equivalent impedance splitting, that is, ensuring that the equivalent impedance of the resonator group after splitting is equal to the impedance of the original single resonator (for example, 50 ⁇ ).
  • the impedance ratios of the resonators in each parallel branch are different, that is, the so-called "different impedance ratios".
  • the impedance ratio of the first resonator R101 and the third resonator R103 is usually not equal to the impedance ratio of the second resonator R102 and the fourth resonator R104.
  • the two pin terminals of the split resonator have potential P1 and potential P2, respectively, and have potential p3 between R101 and R103, and potential p4 between R102 and R104.
  • the impedance ratio of R101 and R103 is not equal to the impedance ratio of R102 and R104, which makes the value of potential P3 not equal to the value of potential P4, resulting in P3 and P4 forms a potential difference, that is, voltage.
  • a voltage will be applied to R105, and the impedance of R105 and the frequency of the voltage applied to it will have the relationship of change in FIG. 8, which is a bridge according to the embodiment of the present invention.
  • FIG. 8 is a bridge according to the embodiment of the present invention.
  • the abscissa represents the frequency
  • the ordinate represents the modulus of the impedance of the bridge structure.
  • the impedance mode value of R105 When the voltage frequency applied across R105 is the series resonance frequency fs of R105, the impedance mode value of R105 has the minimum value Zs; when the voltage frequency is the parallel resonance frequency fp of R105, the impedance mode value of R105 has the maximum value Zp.
  • FIG. 1B is transformed into the circuit shown in FIG. 9A.
  • 9A is an equivalent circuit diagram when the bridge structure in the split resonator is in a short-circuit state according to an embodiment of the present invention.
  • the sub-resonators R101 and R102 are in a parallel relationship, and the sub-resonators R103 and R104 are in a parallel relationship; at the same time, the C-axis directions of R101 and R102 are opposite in the sense of potential, and R103 and R103 The direction of the C axis of R104 is opposite in the sense of potential.
  • the above-mentioned bridge structure can help suppress higher harmonics in the parallel structure formed by R101 and R102 and R103 and R104, and the selection of the above-mentioned C-axis orientation of the piezoelectric layer of each sub-resonator can further improve the suppression effect.
  • R105 has an impedance Zp
  • 9B is an equivalent circuit diagram when the bridge structure in the split resonator according to the embodiment of the present invention is in an open state.
  • the sub-resonators R101 and R103 are in a series relationship, and the sub-resonators R102 and R104 are in a series relationship; at the same time, the C-axis directions of R101 and R103 are opposite in the sense of potential, and R102 and R102 The direction of the C axis of R104 is opposite in the sense of potential.
  • the above structure can help suppress the higher harmonics in the series structure formed by R101 and R103 and R102 and R104.
  • the circuit of the split resonator When the voltage applied across R105 is at other frequencies, the circuit of the split resonator is in the superimposed state of FIG. 9A and FIG. 9B. Since the signal through the split resonator usually has a certain bandwidth, that is, it has multiple frequency components with continuous or discrete distribution, the circuit in Figure 1B can make full use of the two modes shown in Figure 9A and Figure 9B to reduce the circuit In order to improve the balance of the circuit and the ability to suppress nonlinear effects.
  • the two modes similar to those shown in Fig. 9A and Fig. 9B, namely the equivalent short circuit or open circuit mode of the bridge structure, can be used to help Suppress high-order harmonics in the circuit.
  • the bridge structure here can be a single sub-resonator such as R105 or a group of sub-resonators such as B600.
  • the sub-resonators on both sides of one end of the bridge structure and located in the same parallel branch have different C-axis directions of the piezoelectric layer. For example, as shown in Fig.
  • R101 and R103 on both sides of p3 at one end of R105 have different C-axis directions of the piezoelectric layer, which are indicated by arrows in the figure.
  • the sub-resonators on the same side of the bridge structure and located in different parallel branches have different C-axis directions of the piezoelectric layers.
  • R101 and R102 on the left side of R105 have different piezoelectric layer C-axis directions, which are indicated by arrows in the figure.
  • Figures 2 to 6 also use arrows to indicate the direction of the C-axis of the piezoelectric layer of the sub-resonator, and the bridge structure helps to suppress the higher harmonics in the circuit.
  • the gap value between the electrodes or the piezoelectric layers of adjacent sub-resonators after splitting is not less than two acoustic wave wavelengths, and the preferred range is not less than half the acoustic wave wavelength.
  • the materials of the upper electrode and the lower electrode can be selected from the following metals: molybdenum, ruthenium, gold, magnesium, aluminum, tungsten, titanium, chromium, iridium, osmium, platinum, gallium, and germanium.
  • the piezoelectric layer material can be selected from aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, and the above materials doped with a certain proportion of rare earth elements.
  • the piezoelectric material is a thin film with a thickness of less than 10 microns, and has a single crystal or polycrystalline structure, and is made by sputtering or deposition process.

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'invention concerne un résonateur fendu, le résonateur fendu étant un groupe de résonateurs composé d'une pluralité de sous-résonateurs; le groupe de résonateurs comprend deux branches ou plus connectées en parallèle, chaque branche connectée en parallèle comprenant deux ou plusieurs sous-résonateurs connectés en série; entre les points de connexion en série dans des branches adjacentes connectées en parallèle se trouve un sous-résonateur unique ponté ou un groupe de sous-résonateurs pontés.
PCT/CN2019/072989 2019-01-24 2019-01-24 Résonateur fendu avec différents rapports d'impédance WO2020150964A1 (fr)

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PCT/CN2019/072989 WO2020150964A1 (fr) 2019-01-24 2019-01-24 Résonateur fendu avec différents rapports d'impédance

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080007369A1 (en) * 2006-07-10 2008-01-10 Skyworks Solutions, Inc. Bulk acoustic wave filter with reduced nonlinear signal distortion
CN104253592A (zh) * 2013-06-27 2014-12-31 太阳诱电株式会社 双工器
CN106253876A (zh) * 2015-06-09 2016-12-21 太阳诱电株式会社 梯型滤波器、双工器以及模块

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080007369A1 (en) * 2006-07-10 2008-01-10 Skyworks Solutions, Inc. Bulk acoustic wave filter with reduced nonlinear signal distortion
CN104253592A (zh) * 2013-06-27 2014-12-31 太阳诱电株式会社 双工器
CN106253876A (zh) * 2015-06-09 2016-12-21 太阳诱电株式会社 梯型滤波器、双工器以及模块

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