WO2022022438A1 - Procédé de conception de filtre, filtre, multiplexeur et dispositif de communication - Google Patents

Procédé de conception de filtre, filtre, multiplexeur et dispositif de communication Download PDF

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Publication number
WO2022022438A1
WO2022022438A1 PCT/CN2021/108346 CN2021108346W WO2022022438A1 WO 2022022438 A1 WO2022022438 A1 WO 2022022438A1 CN 2021108346 W CN2021108346 W CN 2021108346W WO 2022022438 A1 WO2022022438 A1 WO 2022022438A1
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Prior art keywords
thickness
raised portion
resonator
filter
connection end
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PCT/CN2021/108346
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English (en)
Chinese (zh)
Inventor
庞慰
边子鹏
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诺思(天津)微系统有限责任公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/133—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials for electromechanical delay lines or filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices

Definitions

  • the present invention relates to the technical field of filters, and in particular, to a filter design method, a filter, a multiplexer, and a communication device.
  • miniaturization is achieved by reducing the size of chips and packaging substrates on the one hand, and better performance is achieved by reducing loss sources and better design methods on the other hand.
  • FIG. 1 is a schematic diagram of a structure of an acoustic wave filter with a bandwidth adjustment unit according to the prior art.
  • this filter 100 there are inductors 121, 122 and a plurality of resonators (usually called series resonators) 101 to 104 between the input terminal 131 and the output terminal 132, and the connection point of each series resonator is connected to the ground terminal.
  • Resonators 111 to 113 (usually referred to as parallel resonators) and inductors 123 to 125 are respectively provided on the multiple branches (usually called parallel branches) of the circuit, and the bandwidth adjustment unit shown by C1 is connected in parallel to any of the series paths.
  • a mass load layer is added to each parallel resonator, so that the frequency of the parallel resonator and the frequency of the series resonator are different to form the passband of the filter.
  • the impedance of the thin-film bulk acoustic wave resonator when it works at the series resonance frequency Fs is the impedance of the series resonance point, and its quality factor when it works at the series resonance frequency is Q S , the smaller the series resonance point impedance, the greater the Q S ;
  • the impedance when working at the parallel resonance frequency F p is the parallel resonance point impedance, and the quality factor when it works at the parallel resonance frequency is QP .
  • the higher the parallel resonance point impedance is, the greater the QP; Q max ) corresponds to a frequency between the series resonant frequency and the parallel resonant frequency.
  • the Q max , Q S of the series resonator, and the Q value between the corresponding frequency of the series resonance frequency and the corresponding frequency of the left edge of the passband of the filter have a great influence on the passband insertion loss of the filter, and Q
  • the influence of P is second;
  • the QP and Q max of the parallel resonator have a greater influence on the passband insertion loss of the filter, and the influence of Q S is second.
  • the invention provides a filter design method, a filter, a multiplexer and a communication device, which can effectively improve the insertion loss characteristics of the filter.
  • a filter design method comprising: providing a ring-shaped first raised portion on both the connection end and the non-connected end of the top electrode of the parallel resonator, and the first raised portion is designed as a first raised portion. Thickness, the first thickness makes the QP of the parallel resonator maximum, and QP is the quality factor of the parallel resonator when it works at the parallel resonance frequency; the connecting end and the non-connecting end of the top electrode of the series resonator are provided with a ring-shaped No.
  • the thickness of the second raised part is designed to be the first thickness, it is judged that if the sub-resonance of the raised part of the series resonator with the second raised part does not fall within the passband of the filter, Then, the thickness of the second raised portion of the series resonator is set to be the first thickness; if all or part of the sub-resonance of the raised portion of the series resonator with the second raised portion falls within the passband of the filter, the The connection end and the non-connection end of the top electrode of the series resonator are changed without the second raised portion, or the thickness of the second raised portion is gradually increased, and the current second thickness of the second raised portion makes the In the case where the sub-resonance of the raised part of the series resonator just moves out of the passband of the filter, the thickness of the second raised part of the series resonator is set as the second thickness; the top electrode of the resonator in the bandwidth adjustment unit Both the connecting end and the non-connecting end of the
  • the filter design method further includes: adjusting the width of the first raised portion and/or the second raised portion to a limited value, so as to further improve the filter insertion loss characteristic.
  • the width of the third raised portion is adjusted so that the difference between the width of the third raised portion and the width of the second raised portion is within a second specified range, so as to further improve the filter insertion loss characteristic.
  • a filter comprising a plurality of series resonators, a plurality of parallel resonators and a bandwidth adjustment unit, wherein the connection end and the non-connection end of the top electrode of the parallel resonators are provided with annular
  • the first raised portion, the connecting end and the non-connecting end of the top electrode of the series resonator are provided with a ring-shaped second raised portion, and the connecting end and the non-connecting end of the top electrode of the resonator in the bandwidth adjustment unit are both provided with an annular third raised portion;
  • the thicknesses of the first raised portion and the second raised portion are both the first thickness, and the first thickness makes the sub-resonance of the raised portion of the series resonator with the second raised portion not fall within the passband of the filter, and maximize the QP of the parallel resonator, QP is the quality factor of the parallel resonator when it operates at the parallel resonance frequency, and the difference between the thickness of the third raised portion and the thickness of
  • the widths of the first raised portion and the second raised portion are within a defined range, and the difference between the width of the third raised portion and the width of the second raised portion is within a second specified range.
  • the first thickness is to between, the first specified range is arrive
  • the width of the first elevated portion and the second elevated portion is between 0um and 15um, and the second specified range is between 0um and 6um.
  • connection end and the non-connection end of the resonator of the series resonator, the parallel resonator and the bandwidth adjustment unit include a conductive layer in contact with the electrode at the end in the thickness direction of the resonator, and the conductive layer is located in the piezoelectric Between the layer and the top electrode, or between the piezoelectric layer and the bottom electrode, wherein the thickness of the conductive layer is less than the thickness of the top or bottom electrode with which it contacts.
  • the thickness of the first thickness and the third elevated portion, and the bottom electrode, piezoelectric layer, and top electrode of the resonator where they are located are respectively normalized to the thickness of the elevated portion material according to the speed of sound.
  • the ratio of the sum is 0 to 0.3.
  • the ratio can be expressed by the formula as follows:
  • the thickness of the first thickness and the third elevated portion, and the bottom electrode, piezoelectric layer, and top electrode of the resonator where they are located are respectively normalized to the thickness of the elevated portion material according to the speed of sound.
  • the ratio of the sum is 0 to 0.25.
  • the width of the first raised portion or the second raised portion is different; wherein, the area of the series resonator is positively correlated with the width of the first raised portion relationship, the area of the parallel resonator has a positive correlation with the width of the second raised portion.
  • the first elevated portion, the second elevated portion and/or the third elevated portion include a plurality of segments of the strip-like structure, and the widths of each segment of the strip-like structure are different.
  • a filter comprising a plurality of series resonators, a plurality of parallel resonators and a bandwidth adjustment unit, wherein the connection end and the non-connection end of the top electrode of the parallel resonator are provided with annular
  • the first raised part, the connecting end and the non-connecting end of the top electrode of the series resonator are provided with a second ring-shaped raised part, and the connecting end and the non-connecting end of the top electrode of the resonator of the bandwidth adjustment unit are provided with A ring-shaped third raised portion;
  • the thickness of the first raised portion is a first thickness, which maximizes the QP of the parallel resonator, and QP is the quality factor when the parallel resonator operates at the parallel resonance frequency;
  • the thickness of the second raised portion is a second thickness greater than the first thickness, and the second thickness causes all the sub-resonances of the raised portion of the series resonator with the second raised portion to fall outside the passband of the filter;
  • the widths of the first raised portion and the second raised portion are within a defined range, and the difference between the width of the third raised portion and the width of the second raised portion is within a second specified range.
  • the first thickness is to between, the first specified range is arrive
  • the width of the first elevated portion and the second elevated portion is between 0um and 15um, and the second specified range is between 0um and 6um.
  • connection end and the non-connection end of the resonator of the series resonator, the parallel resonator and the bandwidth adjustment unit include a conductive layer in contact with the electrode at the end in the thickness direction of the resonator, and the conductive layer is located in the piezoelectric Between the layer and the top electrode, or between the piezoelectric layer and the bottom electrode, wherein the thickness of the conductive layer is less than the thickness of the top or bottom electrode with which it contacts.
  • the thicknesses of the first thickness, the second thickness and the third elevated portion are normalized to the elevated portion according to the speed of sound with the bottom electrode, piezoelectric layer, and top electrode of the resonator where they are located.
  • the ratio of the sum of the thicknesses of the materials is 0 to 0.3.
  • the thicknesses of the first thickness, the second thickness and the third elevated portion are normalized to the elevated portion according to the speed of sound with the bottom electrode, piezoelectric layer, and top electrode of the resonator where they are located.
  • the ratio of the sum of the thicknesses of the materials is 0 to 0.25.
  • the width of the first raised portion or the second raised portion is different; wherein, the area of the series resonator is positively correlated with the width of the first raised portion relationship, the area of the parallel resonator has a positive correlation with the width of the second raised portion.
  • the first elevated portion, the second elevated portion and/or the third elevated portion include a plurality of segments of the strip-like structure, and the widths of each segment of the strip-like structure are different.
  • a filter comprising a plurality of series resonators, a plurality of parallel resonators and a bandwidth adjustment unit, wherein the connection end and the non-connection end of the top electrode of the parallel resonators are provided with annular
  • the first raised portion of the bandwidth adjustment unit is provided with a ring-shaped third raised portion at the connection end and the non-connected end of the top electrode of the resonator of the bandwidth adjustment unit; the thickness of the first raised portion is the first thickness, the first thickness Make the QP of the parallel resonator maximum, and QP is the quality factor when the parallel resonator works at the parallel resonance frequency; when the thickness of the raised part of the series resonator is preset to the first thickness, and the first thickness makes the series resonator work When all or part of the sub-resonance of the raised part of the series resonator falls within the passband, the connection end and non-connection end of the top electrode of the series resonator are not provided with raised
  • the width of the first raised portion is within a defined range
  • the width of the third raised portion is within a second specified range.
  • the first thickness is to between, the first specified range is arrive
  • the width of the first raised portion is between 0um and 15um
  • the second specified range is between 0um and 6um.
  • the thickness of the first thickness and the third elevated portion, and the bottom electrode, piezoelectric layer, and top electrode of the resonator where they are located are respectively normalized to the thickness of the elevated portion material according to the speed of sound.
  • the ratio of the sum is 0 to 0.3.
  • the thickness of the first thickness and the third elevated portion, and the bottom electrode, piezoelectric layer, and top electrode of the resonator where they are located are respectively normalized to the thickness of the elevated portion material according to the speed of sound.
  • the ratio of the sum is 0 to 0.25.
  • the width of the first raised portion is different, and the area of the parallel resonator has a positive correlation with the width of the first raised portion.
  • the first elevated portion and/or the third elevated portion includes a plurality of strip-like structures, and each segment of the strip-like structure has different widths.
  • a multiplexer including the above filter.
  • connection end and the non-connection end of the top electrode of the resonator of the parallel resonator, the series resonator and/or the resonator of the bandwidth adjustment unit are provided with raised parts, and the thickness and the thickness of the raised parts are different. Widths correspond to different resonator performances.
  • Reasonably limiting the thickness and width of the elevated layers of the parallel resonators, series resonators and/or resonators in the bandwidth adjustment unit can effectively improve the insertion loss characteristics of the filter.
  • FIG. 1 is a schematic diagram of a filter topology with a bandwidth adjustment unit according to the prior art
  • FIG. 2 is a schematic structural diagram of a thin film bulk acoustic wave resonator in which both the connection end and the non-connection end of the top electrode are provided with a raised portion;
  • Fig. 3 is the sectional view of PP' position in Fig. 2;
  • Fig. 4 is the frequency characteristic curve of resonator quality factor (Q);
  • FIG. 5 is a comparison diagram of the frequency characteristic curve of the real part of the resonator impedance corresponding to the bulk acoustic wave resonator when the raised parts provided by the embodiment of the present invention are of different thicknesses;
  • FIG. 6 is a comparison diagram of the frequency characteristic curve of the real part of the resonator impedance corresponding to the bulk acoustic wave resonator when the raised parts provided by the embodiment of the present invention are of different widths;
  • FIG. 7 is a design flow chart of a filter provided by an embodiment of the present invention.
  • FIG. 8 is a topological structure diagram of the filter according to the first embodiment provided by the embodiment of the present invention.
  • FIG. 9 is a topology diagram of a comparative filter provided by an embodiment of the present invention.
  • 10a is a circuit diagram of a resonator in a comparatively proportional bandwidth adjustment unit in an embodiment of the present invention
  • 10b is a circuit diagram of a comparative proportional bandwidth adjustment unit in an embodiment of the present invention.
  • 11 is a comparison diagram of impedance amplitude curves of impedance Z1 and impedance Z2 provided by an embodiment of the present invention.
  • FIG. 13 is a comparison diagram of the insertion loss frequency characteristic curve and the reflection coefficient of the corresponding circuit of the first example and the comparative example provided by the embodiment of the present invention.
  • Fig. 15 is the filter topology structure of the second embodiment in the embodiment of the present invention.
  • FIG. 16 is a topology structure of a filter according to a third embodiment of the present invention.
  • the thickness and width of the raised portion provided at the connection end and the non-connection end of the top electrode of the series resonator, the parallel resonator, and the resonator in the bandwidth adjustment unit in the filter are limited to further improve the The insertion loss characteristics of the filter are described in detail below.
  • FIG. 2 is a schematic structural diagram of a thin-film bulk acoustic wave resonator in which both the connection end and the non-connection end of the top electrode are provided with raised portions.
  • Fig. 3 is a cross-sectional view of the position of PP' in Fig. 2 .
  • the resonator with the raised portion includes a substrate 601 , an acoustic mirror 602 , a bottom electrode 603 , a piezoelectric thin film layer (piezoelectric layer) 604 , a top electrode 605 , and a raised portion 606 .
  • the optional materials of the substrate 601 are single crystal silicon, gallium arsenide, sapphire, quartz, etc.
  • the acoustic mirror 602 (the cavity structure in FIG. 3 ) can be a Bragg reflection layer or other equivalent forms
  • the bottom electrode 603 is made of materials Molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or alloys of the above metals can be selected
  • the piezoelectric film layer 604 can be selected from single crystal aluminum nitride, polycrystalline aluminum nitride, oxide Zinc, PZT (lead zirconate titanate piezoelectric ceramics) and other materials, as well as rare earth element doped materials containing a certain atomic ratio of the above materials
  • the material of the top electrode 605 can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper , titanium, iridium, os
  • the thickness H of the raised portion is defined as the height difference between the top surface of the raised portion and the inner top surface of the top electrode in the thickness direction, and W is defined as the width of the raised portion of the resonator.
  • FIG. 4 is a frequency characteristic curve of the quality factor (Q) of the resonator.
  • the impedance of the thin film bulk acoustic wave resonator when it works at the series resonance frequency F s is the series resonance point impedance, and the quality factor when it works at the series resonance frequency is Q S .
  • the impedance when working at the parallel resonance frequency F p is the parallel resonance point impedance, and the quality factor when working at the parallel resonance frequency is QP .
  • the higher the parallel resonance point impedance is, the greater the QP; ) corresponds to a frequency between the series resonant frequency and the parallel resonant frequency.
  • the Q value of the resonator is mainly determined by the loss of the energy of the resonator.
  • the main mode When the thin film bulk acoustic wave resonator works in the piston mode (main mode), there will be a transverse mode (parasitic mode) at the same time, and the acoustic leakage caused by the transverse mode is parallel.
  • the main factor of energy loss at resonance that is, the smaller the acoustic energy leakage of the transverse mode, the higher the Q P value.
  • the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode is the effective area of the resonator, and the acoustic wave in the transverse mode propagates from one edge of the effective area of the resonator to the other.
  • the mismatch of acoustic impedance at the edge of the effective area increases, the acoustic energy is more easily confined inside the resonator, and the QP value is higher.
  • the function of the raised part of the resonator is to change the acoustic impedance at the edge of the effective area of the resonator, and a certain frequency band is within a certain thickness range (such as 0 to ) as the thickness of the raised portion increases, the impedance of the parallel resonance point of the resonator first increases and then decreases.
  • the QP value of the resonator is improved by providing raised parts at the top electrode connecting end and non-connecting end of the resonator, which can improve the roll-off characteristics and insertion loss characteristics of the filter to a certain extent; however, when the resonators are connected in series The corresponding frequency band below the resonant frequency point will simultaneously generate an elevated sub-resonance.
  • FIG. 5 is a comparison diagram of the frequency characteristic curve of the real part of the resonator impedance corresponding to the bulk acoustic wave resonator when the raised parts provided by the embodiment of the present invention have different thicknesses. As shown in FIG. 5 , the area shown by A in the figure is the sub-resonance of the raised part when the thickness is H1 and the width is W1 .
  • the black solid line is the frequency characteristic curve of the impedance real part of the resonator without the raised part at the top electrode connecting end and the non-connecting end.
  • the frequency characteristic curve of the impedance real part of the resonator of the raised part with a width of W1 is the impedance real part of the resonator with the height of H2 and the width of W1 at the top electrode connecting end and the non-connecting end. Part of the frequency characteristic curve, where H2 is greater than H1. It can be seen from Fig.
  • FIG. 6 is a comparison diagram of the frequency characteristic curve of the real part of the resonator impedance corresponding to the bulk acoustic wave resonator when the raised parts provided by the embodiment of the present invention have different widths.
  • the solid line in Fig. 6 is the frequency characteristic curve of the real part of the impedance of the resonator without the raised part at the top electrode connecting end and the non-connecting end. H1.
  • the solid line marked with a rectangle is the frequency characteristic of the real part of the impedance of the resonator with a height of H1 and a width of W2 at the top electrode connecting end and the non-connecting end. curve, where W2 is greater than W1. It can be seen from Fig. 6 that when the thickness H1 is the same, the larger the width of the raised portion is, the larger the peak impedance of the sub-resonance impedance of the raised portion is.
  • FIG. 7 is a flow chart of designing a filter provided by an embodiment of the present invention.
  • the design method of the filter includes: first, determining the design index, and determining the laminated structure of the resonator according to the design index; then setting the first raised portion thickness H1 on the parallel resonator (the height of the raised portion is between ), the raised thickness makes the QP value of the parallel resonator maximum; when the series resonator also sets the raised part thickness to H1, whether the sub-resonance of the raised part falls in all or part of the passband, if the height of the raised part is H1 If the sub-resonance does not fall within the passband, then the thickness of the raised part of the series resonator can be set to H1.
  • the thickness of the raised part of the series resonator needs to be increased. , move the sub-resonance of the elevated part to the low-frequency end, until the sub-resonance of the elevated part just moves out of the passband, at this time the corresponding thickness of the elevated part is H2 (H2>H1), or the series resonator is not set to elevate After the thickness of the raised part of the resonator is determined, according to the performance requirements of the series resonator and the parallel resonator for the resonator, the width of the raised part of the resonator with different areas is determined.
  • the thickness and width of the raised part of the series resonator and the parallel resonator are determined, adjust the thickness and width of the raised part of the resonator in the bandwidth adjustment unit according to the raised part parameters of the series resonator, that is, adjust the thickness of the resonator in the bandwidth adjustment unit.
  • the thickness and width are the same as or similar to the thickness and width of the raised portion of the series resonance. Among them, the difference between the thicknesses of the two is less than the first specified range delta-H, the difference between the widths is less than the second specified range delta-W, and the value of the first specified range delta-H is arrive The value of the second specified range delta-W is between 0um and 6um.
  • FIG. 8 is a topological structure diagram of the filter according to the first embodiment provided by the embodiment of the present invention.
  • the topology 610 includes a series branch, a parallel branch and a bandwidth adjustment unit, wherein the series branch includes series resonators S11 , S12 and S13 , and the thickness of the raised portion of the series resonator is set to H2 , width Set to W1, at this time, all the sub-resonances of the raised part of the series resonator fall outside the passband; the parallel branch includes parallel resonators P11, P12, P13, P14, the thickness of the raised part of the parallel resonator is set to H1, and the width is set to is W1, at this time, the parallel resonator has the largest QP value.
  • the bandwidth adjustment unit C1 is composed of a resonator P_H2 and an inductor L0 in cascade, wherein the resonant frequency of the resonator P_H2 is the same as or close to the resonant frequency of the series resonator.
  • the bandwidth adjustment unit C1 can be connected in parallel to any node of the filter series branch.
  • the thickness and width of the raised portion of the resonator P_H2 in the present first embodiment are set to be the same as the thickness and width of the raised portion of the series resonator.
  • the topology structure of the first embodiment also includes an input port T1 and an output port T2 of the filter, an inductance L1 and an inductance L2 respectively set at the input port T1 and the output port T2, and a grounding inductance L3 and a grounding inductance L4 on the parallel branch.
  • the four inductors are used to adjust the filter characteristics.
  • the filter in the embodiment of the present invention is not limited to the filter topology shown in FIG. 8 , and the structure is only used for comparative description.
  • FIG. 9 is a topological structure diagram of a comparative filter provided by an embodiment of the present invention.
  • the difference between the topology structure 500 and the topology structure 610 shown in FIG. 8 is that the thickness and width of the raised portion of the resonator P_H1 of the bandwidth adjustment unit C1 in the comparative example are H1 and W1 , at this time the elevated sub-resonance of the series resonator falls inside the filter passband (filter passband 2496MHz-2690MHz).
  • Fig. 10a is a circuit diagram of a resonator in a comparative proportional bandwidth adjustment unit in an embodiment of the present invention
  • Fig. 10b is a circuit diagram of a comparative proportional bandwidth adjustment unit in an embodiment of the present invention.
  • Z1 is the impedance viewed in the direction indicated by the arrow in the figure
  • Z2 is the impedance viewed in the direction indicated by the arrow in the figure.
  • FIG. 11 is a comparison diagram of impedance amplitude curves of impedance Z1 and impedance Z2 according to an embodiment of the present invention.
  • the thin solid line in the figure is the frequency characteristic curve of the real part of the impedance Z1 in the circuit shown in Figure 10a
  • the thick solid line is the frequency characteristic curve of the real part of the impedance Z2 in the circuit shown in Figure 10b, wherein, After the resonator and the inductor are cascaded, the series resonance frequency of the resonator will move to the low frequency end, and the parallel resonance frequency will remain unchanged.
  • the change of the series resonance frequency is related to the inductance of the cascading inductor. The larger the inductance is, the closer the series resonance frequency is to the low frequency end.
  • FIG. 12 is a comparison diagram of the real part frequency characteristic curves of the impedance Z1 and the impedance Z2 provided by the embodiment of the present invention.
  • the thin solid line in the figure is the amplitude-frequency characteristic of the impedance Z1 in the circuit shown in Figure 10a
  • the thick solid line is the amplitude-frequency characteristic of the impedance Z2 in the circuit shown in Figure 10b.
  • the impedance of the connected inductor L0 is r.
  • FIG. 13 is a comparison diagram of the insertion loss frequency characteristic curve and the reflection coefficient of the corresponding circuit of the first example and the comparative example provided by the embodiment of the present invention. It can be seen from the content of FIG. 13 that when the elevated sub-resonance of the resonator in the bandwidth adjustment unit falls inside the passband, it will affect the passband insertion loss characteristic of the filter.
  • the solid line marked with a triangle in Fig. 13 is the reflection coefficient of one end of the series resonator when a 50 ohm load is applied to the other end in the first embodiment/comparative example, and the solid line marked with a rectangle is the grounding end of the bandwidth adjustment unit of the first embodiment.
  • the reflection coefficient of one end of the resonator when a load of 50 ohms is applied, and the solid line marked with a circle is the reflection coefficient of one end of the resonator when a load of 50 ohms is applied to the ground terminal in the comparative bandwidth adjustment unit.
  • the filter passband insertion loss and out-of-band rejection are determined by the relative value of the impedance of the series branch and the impedance of the parallel branch (including the bandwidth adjustment unit).
  • the impedance of the series resonator in the passband of the filter is relative to the parallel branch (including the bandwidth).
  • the reflection coefficient shown in FIG. 13 directly reflects the impedance of the circuit in a specific frequency band, and the larger the difference in reflection coefficient is, the larger the difference in impedance is. Therefore, in the frequency band of 2496MHz-2650MHz in Fig. 13, due to the elevated sub-resonance of the resonator in the comparative bandwidth adjustment unit, the impedance of the bandwidth adjustment unit is smaller than that of the bandwidth adjustment unit in the first embodiment of the present invention, especially In the 2496MHz-2575MHz frequency band, the impedance change of the bandwidth adjustment unit in the first embodiment and the comparative example is relatively large compared to the difference between the impedance of the bandwidth adjustment unit and the impedance of the series resonator in the first embodiment, so it will greatly affect the corresponding Insertion loss characteristics of the frequency band.
  • the Q max , Q S of the series resonator and the Q value between the frequency corresponding to the series resonance frequency point and the frequency corresponding to the left edge of the filter passband have a greater impact on the passband insertion loss.
  • Q P is second;
  • Q P and Q max of the parallel resonator have a greater impact on the pass-band insertion loss, and
  • Q S is second;
  • the performance requirements of the resonator in the bandwidth adjustment unit are the same or similar to those of the series resonator, in order to obtain better performance filter insertion loss characteristics.
  • the different settings of the thickness and width of the raised part of the top electrode connection end and the non-connected end of the resonator correspond to different resonator performance, and the thickness and width of the raised part of the bandwidth adjustment unit resonator should be reasonably set in combination with the filter bandwidth index. , which can effectively improve the insertion loss characteristics of the spread-band ladder filter.
  • FIG. 14 is an insertion loss frequency characteristic curve diagram of the first example and the comparative example in the embodiment of the present invention.
  • the solid line shows the insertion loss frequency characteristic curve of the first embodiment
  • the broken line shows the insertion loss characteristic curve of the comparative example.
  • the impedance difference (the relative magnitude can be represented by delta-S2 shown in Fig.
  • the insertion loss characteristic of the comparative example in this frequency band will be deteriorated to different degrees compared with the first embodiment, and The closer to the low frequency the worse the deterioration.
  • the insertion loss of the first embodiment is slightly worse than that of the comparative example.
  • the QP value of the resonator in the bandwidth adjustment unit of the first embodiment is relative to the Q of the resonator in the bandwidth adjustment unit of the comparative example. Due to the low value of P , however, the passband insertion loss characteristics of the first embodiment are generally better than those of the comparative example, and the insertion loss in-band flatness of the first embodiment is better, which is conducive to achieving better group delay characteristics .
  • FIG. 15 is a topology structure of a filter according to the second embodiment of the present invention.
  • the difference between the topology 620 and the filter topology 610 of the first embodiment is that the series resonators S11 , S12 , and S13 are not provided with raised parts, so the series resonators have no Raise the sub-resonance;
  • the bandwidth adjustment unit C1 is composed of the resonator P_H0 and the inductor L0 in cascade, wherein the resonant frequency of the resonator P_H0 is the same or close to the resonant frequency of the series resonator.
  • neither the resonator P_H0 nor the series resonator is provided with a raised portion.
  • the number of bandwidth adjustment units in the present invention is not limited, and the resonators in the bandwidth adjustment unit can be split in series and/or in parallel, and the series split and/or parallel split can be split by equal area, or It can be split by unequal area, and the thickness and width of the raised portion of the connecting end and the non-connecting end of the top electrode of the resonator in the bandwidth adjustment unit are set to be the same as or similar to those of the series resonator.
  • FIG. 16 is a topology structure of a filter according to a third embodiment of the present invention.
  • the filter includes a plurality of bandwidth adjustment units, and the thickness and width of the raised portion of the resonator in each bandwidth adjustment unit are set to the thickness and width of the raised portion of the series resonator. the same or similar.
  • the bandwidth adjustment unit can adopt various structural forms, which increases the flexibility of design to a certain extent.
  • An embodiment of the present invention also provides a multiplexer, where the multiplexer includes the above-mentioned filter.
  • the multiplexer includes the above-mentioned filter.
  • An embodiment of the present invention also provides a communication device, which includes the above-mentioned filter. Under the condition that the filter insertion loss characteristic is effectively improved, the performance of the communication device is also improved.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention concerne le domaine technique des filtres, et concerne en particulier un procédé de conception de filtre, un filtre, un multiplexeur et un dispositif de communication. Le procédé est utilisé pour configurer de manière appropriée, selon des indices de conception, l'épaisseur d'une partie surélevée au niveau d'une extrémité de connexion et d'une extrémité de non connexion d'une électrode supérieure dans chacun des résonateurs disposés en série, chacun des résonateurs étant agencé en parallèle, et un résonateur dans une unité de réglage de bande passante, ce qui permet d'améliorer les caractéristiques de perte d'insertion d'un filtre, de réduire la perte d'insertion du filtre, et par conséquent de réduire les coûts de production et d'augmenter la flexibilité de conception dans une certaine mesure.
PCT/CN2021/108346 2020-07-28 2021-07-26 Procédé de conception de filtre, filtre, multiplexeur et dispositif de communication WO2022022438A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117040476A (zh) * 2022-12-16 2023-11-10 北京芯溪半导体科技有限公司 一种滤波器、双工器、多工器以及通信设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111953314B (zh) * 2020-07-28 2021-06-01 诺思(天津)微系统有限责任公司 滤波器设计方法和滤波器、多工器、通信设备
CN116169452B (zh) * 2022-12-15 2023-09-22 北京芯溪半导体科技有限公司 滤波器设计方法、装置及相关设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572173A (en) * 1994-02-15 1996-11-05 Ngk Spark Plug Co., Ltd. Ladder type filter with adjustable resonator positioning member
CN103281050A (zh) * 2013-06-17 2013-09-04 天津大学 薄膜体声波滤波器
CN110061712A (zh) * 2018-12-26 2019-07-26 天津大学 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备
CN111010103A (zh) * 2019-05-31 2020-04-14 天津大学 带多层突起结构的谐振器及其制造方法、滤波器及电子设备
CN111953314A (zh) * 2020-07-28 2020-11-17 诺思(天津)微系统有限责任公司 滤波器设计方法和滤波器、多工器、通信设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE427582T1 (de) * 2004-07-20 2009-04-15 Murata Manufacturing Co Piezoelektrisches filter
US8896395B2 (en) * 2011-09-14 2014-11-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having multiple lateral features
CN109889179A (zh) * 2018-12-26 2019-06-14 天津大学 谐振器和梯形滤波器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572173A (en) * 1994-02-15 1996-11-05 Ngk Spark Plug Co., Ltd. Ladder type filter with adjustable resonator positioning member
CN103281050A (zh) * 2013-06-17 2013-09-04 天津大学 薄膜体声波滤波器
CN110061712A (zh) * 2018-12-26 2019-07-26 天津大学 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备
CN111010103A (zh) * 2019-05-31 2020-04-14 天津大学 带多层突起结构的谐振器及其制造方法、滤波器及电子设备
CN111953314A (zh) * 2020-07-28 2020-11-17 诺思(天津)微系统有限责任公司 滤波器设计方法和滤波器、多工器、通信设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117040476A (zh) * 2022-12-16 2023-11-10 北京芯溪半导体科技有限公司 一种滤波器、双工器、多工器以及通信设备
CN117040476B (zh) * 2022-12-16 2024-02-06 北京芯溪半导体科技有限公司 一种滤波器、双工器、多工器以及通信设备

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