WO2020149837A1 - Substrate processing system, substrate chamber for a vacuum processing system, and method of cooling a substrate - Google Patents

Substrate processing system, substrate chamber for a vacuum processing system, and method of cooling a substrate Download PDF

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Publication number
WO2020149837A1
WO2020149837A1 PCT/US2019/013739 US2019013739W WO2020149837A1 WO 2020149837 A1 WO2020149837 A1 WO 2020149837A1 US 2019013739 W US2019013739 W US 2019013739W WO 2020149837 A1 WO2020149837 A1 WO 2020149837A1
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Prior art keywords
substrate
chamber
track
processing system
cooling
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PCT/US2019/013739
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French (fr)
Inventor
Khaleelulla SHARIEF
Brijesh RAJU
Original Assignee
Applied Materials, Inc.
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201980088736.XA priority Critical patent/CN113287194A/en
Priority to PCT/US2019/013739 priority patent/WO2020149837A1/en
Priority to KR1020217025523A priority patent/KR102654241B1/en
Publication of WO2020149837A1 publication Critical patent/WO2020149837A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • Embodiments of the present disclosure relate to substrate processing systems, particularly vacuum processing systems for processing one or more substrates in an essentially vertical orientation, e.g. for display production. Further embodiments of the present disclosure relate to substrate chambers for vacuum processing systems. More specifically, embodiments of the present disclosure relate to vacuum processing systems and substrate chambers having a substrate cooling device. Yet further embodiments of the present disclosure relate to methods of cooling a substrate.
  • Techniques for layer deposition on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition.
  • a sputter deposition process can be used to deposit a material layer on the substrate, such as a layer of a conducting material or an insulating material.
  • Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a sputter deposition process. Further applications include insulating panels, substrates with TFT, color filters or the like.
  • Substrate processing systems may include an atmospheric portion, e.g. a clean room, one or more vacuum chambers and a load lock chamber for loading substrates from the atmospheric portion to the one or more vacuum chambers.
  • the substrates are typically exposed to elevated temperatures.
  • the processed substrates are cooled.
  • the temperature in the individual chambers of the substrate processing systems varies. Handling of thin substrates, particularly thin large area substrates, at elevated and/or under changing temperatures is challenging.
  • cooling is typically provided by introducing a cooling gas into the substrate chamber.
  • cooling gas cooling systems have some disadvantages with respect to cooling efficiency, operating and maintaining costs. For example, the cooling gases typically used, e.g. helium, are quite expensive. Further, for effective cooling, large amounts of cooling gas need to be used.
  • a substrate processing system includes one or more substrate chambers comprising a substrate transportation system. Further, the substrate processing system includes one or more substrate cooling devices arranged between a first track and a second track of the substrate transportation system.
  • a substrate processing system includes a load lock chamber, a pre-heating chamber connected to the load lock chamber, and a transportation system.
  • the transportation system has a first track for transporting an unprocessed substrate. Additionally, the transportation system has a second track for transporting a processed substrate.
  • the transportation system is provided in the load lock chamber and the pre-hearing chamber. At least one of the load lock chamber and the pre-heating chamber includes one or more substrate cooling devices for cooling the processed substrate.
  • a substrate chamber for a vacuum processing system includes a substrate transportation system having a first transportation track and a second transportation track. Further, the substrate chamber includes a cooling device arranged between the first transportation track and the second transportation track.
  • a method of cooling a substrate includes providing a cooling of the substrate in one or more substrate chambers by using a one or more substrate cooling devices arranged between a first track and a second track of a substrate transportation system.
  • a method of manufacturing a coated substrate particularly for manufacturing an electronic device, is provided.
  • the method includes using at least one of a substrate processing system according to any embodiments described herein and a substrate chamber according any embodiments described herein.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing the described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
  • FIG. 1 shows a schematic sectional top view of a substrate processing system according to embodiments described herein;
  • FIGS. 2 to 4 show schematic sectional top views of a substrate processing system according to further embodiments described herein;
  • FIG. 5A shows a schematic perspective view of a first chamber of a substrate processing system according to embodiments described herein;
  • FIG. 5B shows a schematic perspective view of a second chamber of a substrate processing system according to embodiments described herein;
  • FIG. 6A shows a schematic sectional top view of a substrate chamber for a vacuum processing system according to embodiments described herein;
  • FIG. 6B shows a schematic perspective view of a substrate chamber for a vacuum processing system according to embodiments described herein;
  • FIG. 7 shows a flowchart for illustrating a method of cooling a processed substrate according to embodiments described herein.
  • the substrate processing system 100 includes one or more substrate chambers 105 comprising a substrate transportation system 140. Further, the substrate processing system 100 includes one or more substrate cooling devices 150 arranged between a first track 141 and a second track 142 of the substrate transportation system 140. Typically, the one or more substrate cooling devices 150 have a cooling surface 154 oriented for facing a substrate 10 to be cooled. In particular, the area Acs of the cooling surface 154 at least substantially corresponds to the substrate area A s of the substrate 10 to be cooled. In other words, the area Acs of the cooling surface 154 can be 0.8 x A s £ A cs £ 1.2x A s , particularly 0.9xA s £ A cs £ 1.1 xA s .
  • an improved substrate processing system can be provided.
  • a processing system with one or more substrate cooling devices as described herein, a more effective substrate cooling at lower costs can be provided.
  • providing a substrate cooling device between a first and a second substrate transportation track has the advantage that the cooling device may also function as a radiation wall, e.g. when an unprocessed substrate on the first track is heated while a processed substrate on the second track is cooled. Accordingly, with the substrate processing system as described herein, additional cooling chambers can be avoided.
  • embodiments as described herein provide for a more efficient substrate cooling while at the same time enabling a compact processing system layout with a small footprint, such that short substrate processing tact times can be realized.
  • substrate cooling provides for improved substrate handling, particularly after substrate processing when the substrate exits the processing system. For instance, with embodiments described herein, slippage of a robot fork for picking up the processed substrates can be avoided, such that substrate damage or breakage can substantially be eliminated.
  • the first track 141 and the second track 142 typically extend in a substrate transport direction 11. Further, in FIG. 1 a lateral direction 12 and a vertical direction 13 are indicated.
  • the substrate transport direction 11 and the lateral direction 12 define a horizontal plane.
  • the one or more substrate cooling devices 150 are configured as a wall extending in the vertical direction 13. Further, the one or more substrate cooling devices 150 typically extend in the substrate transport direction 11 over at least half of the substrate chamber length L.
  • the one or more substrate cooling devices 150 can be provided at a first lateral distance D1 from the first track 141 and at a second lateral distance D2 from the second track 142.
  • the first lateral distance D1 and the second lateral distance D2 can be substantially equal.
  • the one or more substrate cooling devices 150 may be arranged substantially in the middle between the first track 141 and the second track 142.
  • a “substrate processing system” can be understood as a system configured for substrate processing, particularly for material deposition on a substrate.
  • the substrate processing system can be an in-line processing system having a plurality of chambers connected to each other.
  • an in-line processing system can be understood as an arrangement of two or more vacuum chambers arranged in line. Further, an in-line processing system can be configured for the position of one or more layers on a vertical substrate. Accordingly, the substrate processing system can be a vertical substrate processing system, i.e. configured for processing substrates in a substantially vertical substrate orientation. For instance, one or more layers can be deposited in a stationary deposition process or a dynamic deposition process. The deposition process can be a PVD-process, e.g. sputter process, or a CVD process. Yet further, it is to be noted that typically the substrate processing system is a vacuum processing system having one or more chambers configured for providing vacuum conditions.
  • a“substrate” can be understood as a substrate for material deposition, particularly deposition of one or more layers, e.g. for display manufacturing.
  • substrates as described herein shall embrace substrates which are typically used for an LCD (Liquid Crystal Display), a PDF (Plasma Display Panel), and the like.
  • the substrate is held or supported by a carrier.
  • the carrier may be loaded with the substrate.
  • the substrate may be present in a substrate receiving area of the carrier.
  • the term“substrate” as used herein shall particularly embrace inflexible substrates, e.g., glass plates and metal plates. However, the present disclosure is not limited thereto, and the term“substrate” can also embrace flexible substrates such as a web or a foil.
  • the substrate can be made of any material suitable for material deposition.
  • the substrate can be made of a material selected from the group consisting of glass (for instance soda- lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials, mica or any other material or combination of materials which can be coated by a deposition process.
  • the substrate can have a thickness of 0.1 mm to 1.8 mm, such as 0.7 mm, 0.5 mm or 0.3 mm. In some implementations, the thickness T of the substrate may be 5 pm £ T £ 700 pm.
  • the substrate is a large area substrate.
  • the large area substrate can have a size of at least 0.01 m 2 , specifically at least 0.1 m 2 , and more specifically at least 0.5 m 2 .
  • a large area substrate can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73 x 0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • a“substrate chamber” can be understood as a chamber configured for receiving a substrate as described herein.
  • a “substrate chamber” as described herein is configured for receiving one or more substantially vertically arranged substrates.
  • a“substrate chamber” as described herein is typically configured for providing vacuum conditions in the interior of the substrate chamber.
  • a“substrate transportation system” can be understood as a system configured for transporting one or more substrates within the substrate processing system.
  • the substrate transportation system is typically configured for transporting the substrate held or supported by a substrate carrier.
  • the substrate transportation system typically includes one or more paths, e.g. a first track and a second track, for transporting the substrate within the substrate processing system.
  • the first track can be a track configured for transporting an unprocessed substrate, e.g. from an entry of the substrate processing system towards a substrate processing chamber.
  • the second track can be a track configured for transporting a processed substrate, e.g. from the substrate processing chamber towards an exit of the substrate processing system.
  • the first track and the second track may also be referred to as substrate transportation tracks, respectively.
  • a “track” can be understood as a guiding structure, e.g. a guide rail, for guiding the substrate along the substrate transport direction. Accordingly, a“track” can be understood as a mechanical structure.
  • the substrate transportation system can be a contactless transportation system, e.g. based on magnetic levitation.
  • the first track can be provided for transporting an unprocessed substrate towards a processing module, also referred to as a substrate processing chamber.
  • the second track can be provided for transporting a processed substrate from the processing module towards an atmospheric module.
  • the second track is laterally displaced with respect to the first track.
  • the first track and the second track can be substantially parallel to each other. Accordingly, it is to be understood that the substrate transportation system can be configured for transporting one or more substrates from an atmospheric module through one or more transfer modules to one or more processing modules and vice versa.
  • a“substrate cooling device” can be understood as a device configured for providing a cooling of a substrate.
  • the substrate cooling device is arranged and configured for removing heat from a substrate.
  • the substrate cooling device can be a device which can take up thermal energy from a substrate. Accordingly, it is to be understood that by providing a substrate cooling device as described herein, a heat flux from the substrate to the substrate cooling device is achieved such that the substrate can be cooled.
  • the substrate cooling device as described herein is a hardware device provided in the interior of the one or more substrate chambers as described herein.
  • the one or more substrate chambers 105 include a first chamber 101 connected to a second chamber 102.
  • the first chamber 101 and the second chamber 102 can be connected via a valve, e.g. a gate valve 115.
  • a“gate valve” can be understood as a mouth which allows for a vacuum seal to an adjacent vacuum chamber.
  • the one or more substrate cooling devices 150 include an active cooling device 155 provided in the second chamber 102.
  • an“active cooling device” can be understood as a device which is actively cooled, for example by employing a cooling liquid such as water.
  • the active cooling device can include one or more tubes through which cooling fluid can be pumped to provide the cooling.
  • the tubes can be of a meandering shape which can be beneficial for improving the cooling efficiency.
  • the tubes are connected to a reservoir of cooling liquid. Accordingly, it is to be understood that the active cooling device may include a closed loop cooling circuit.
  • the one or more substrate cooling devices 150 may include a passive cooling device 151 provided in the first chamber 101.
  • a passive cooling device can be understood as a device configured for taking up heat without additional active components or elements, such as tubes with cooling liquid.
  • the passive cooling device 151 typically includes a radiation absorbing surface 153, e.g. provided by a dark or black colored surface.
  • the radiation absorbing surface may be provided by a coating, layer, or foil.
  • the radiation absorbing surface 153 may be provided by one or more stickers.
  • the first chamber 101 is a load lock chamber 110, also referred to as load lock module or pre-vacuum module herein, and the second chamber 102 is a pre-heating chamber 121.
  • the second chamber 102 may include a heating device 160 for preheating an unprocessed substrate, as exemplarily shown in FIG. 4.
  • the first chamber 101 and the second chamber 102 have a dual function.
  • the first chamber 101 functions as a pre-vacuum module.
  • the first chamber 101 provides for a second cooling.
  • the second chamber 102 provides for pre-heating of an unprocessed substrate as well as for a first cooling of the processed substrate after processing.
  • FIG. 4 shows a more detailed layout of a substrate processing system according to embodiments described herein which can be combined with other embodiments described herein.
  • the substrate processing system 100 may include modules. Modules can be or include chambers.
  • the substrate processing system can include one or more atmospheric modules 170.
  • the atmospheric modules may include a swing module 172.
  • the swing module 172 is configured for bringing the one or more substrates from a horizontal position into a substantially vertical position.
  • the processing system may include one or more load lock modules 174.
  • a load lock module may also be referred to herein as a“pre-vacuum module”.
  • the first chamber 101 as described herein is a load lock module.
  • the processing system may include one or more transfer modules 180.
  • the one or more transfer modules 180 may include one or more high- vacuum modules 184.
  • the second chamber 102 as described herein is a high-vacuum module 184.
  • the substrate processing system 100 typically includes one or more processing modules 190.
  • the one or more load lock modules 174, the one or more transfer modules 180, and the one or more processing modules 190 are typically configured for providing vacuum conditions in the respective module. Accordingly, vacuum conditions may be applied to the one or more processing modules 190 and/or the transfer modules 180 and/orthe load lock modules 174.
  • Vacuum conditions as used herein include pressure conditions in the range of below 10 -1 mbar or below 10 -3 mbar, such as 10 -7 mbar to 10 -2 mbar.
  • vacuum conditions in the load lock module may be switched between atmospheric pressure conditions and subatmospheric pressure conditions, e.g. in a range at or below 10 -1 mbar.
  • the substrate may be inserted into the load lock module provided at atmospheric pressure, the load lock module may be sealed, and subsequently may be set at a subatmospheric pressure in the range below 10 -1 mbar. Subsequently, an opening between the load lock chamber and the high vacuum module may be opened, and the substrate may be inserted into the high vacuum module, e.g. to be transported into the processing module.
  • vacuum conditions in the processing modules may include process pressure conditions at or below 10 -2 mbar, such as 10 -3 mbar to 10 -4 mbar.
  • Base pressure conditions in the processing modules may be in the range of 10 -7 mbar to 10 -6 mbar, particularly in the range of 10 -7 mbar to 5x 10 -6 mbar.
  • Vacuum conditions may be applied through the use of vacuum pumps or other vacuum creating techniques.
  • the atmospheric module 170 may be connected to the one or more transfer modules 180.
  • a load lock module 174 may connect the atmospheric module and the one or more high- vacuum modules 184.
  • the one or more high-vacuum modules 184 are typically connected to the one or more processing modules 190.
  • the load lock module or chamber may assist in equalizing pressure differences between modules. For example, atmospheric pressure is applied in one module and a vacuum is applied in the module which is connected to the one module via the load lock module.
  • the pre-vacuum module may be arranged between the atmospheric module and the one or more high vacuum modules.
  • the atmospheric module may include atmospheric conditions.
  • the air pressure in the load module may include atmospheric air pressure.
  • particles, like e.g. O 2 , H 2 O and N 2 may be present in the atmospheric module or generally outside one of the vacuum chambers.
  • the pre-vacuum module may include different pressure conditions compared to the atmospheric module.
  • the pre-vacuum chamber includes lower pressure conditions.
  • the pressure in the pre-vacuum chamber may be below 10 -1 mbar.
  • the pre-vacuum chamber may be connected to one or more high vacuum modules.
  • the one or more processing modules 190 may include different pressure conditions compared to the atmospheric module and/or the pre-vacuum module.
  • the one or more processing modules 190 or chambers contain one or more deposition sources 195. If more than one deposition source is present, the deposition sources may be arranged in a row. For example, the deposition sources can be arranged next to each other. The deposition sources may extend vertically in length. As exemplaiily indicated by arrow 191, typically a track switch device is provided in the one or more processing modules 190. The track switch device is configured for transferring a substrate from the first track 141 to the second track 142.
  • the one or more deposition sources may be rotatably fixed to a bottom side of the processing module.
  • two to ten deposition sources may be present in the one or more processing chambers.
  • three to seven deposition sources may be present in the one or more processing chambers.
  • Processing of a substrate may be understood as transferring material to a substrate.
  • deposition material may be deposited on the substrate, for example, by a CVD process or a PVD process, such as sputtering or evaporation.
  • the substrate may include a deposition material receiving side.
  • the deposition material receiving side of the substrate may be regarded as the side of the substrate feeing a deposition source.
  • processing of a substrate may also include transportation of the substrate from one module to another module of the processing system, particularly by using a substrate transportation system as described herein.
  • the substrate processing system may include a heating device 160 for heating the substrate to be processed.
  • the one or more transfer modules 180 may include a heating device 160.
  • the second chamber 102 can include a heating device 160 for preheating an unprocessed substrate.
  • the heating device 160 is arranged between the first track 141 and an outer wall 102W of the second chamber 102.
  • the first chamber 101 may include a heating device. Accordingly, heating may also be carried out in the pre-vacuum chamber. For instance, heating in the pre-vacuum chamber can be carried out statically.
  • Static heating is to be understood as a heating arrangement that is stationary, for example, at a wall of the chamber. It may also be understood as a heating arrangement that is stationary, attached to a wall of the chamber. Stationary heating may include that the substrate is stopped in front of the heating device.
  • Heating the substrate in the pre-vacuum chamber and/or the high-vacuum modules has the advantage that particles may be removed in the beginning of substrate processing. Thus, spreading of particles to subsequent chambers is prevented more effectively. Further, degassing of the substrate and/or the substrate carrier is promoted. Thus, an improved process stability and performance can be achieved.
  • the substrate processing system 100 typically includes a substrate transportation system 140 for transporting one or more substrates through the processing system.
  • the substrate transportation system 140 may include transportation paths, e.g. a first track 141 and a second track 142, extending through the processing system.
  • the one or more substrates may be transported from the atmospheric module to the one or more processing modules and vice versa.
  • the one or more substrates may circulate through the substrate processing system, particularly between the atmospheric module and the one or more processing modules.
  • the first track 141 is for transporting an unprocessed substrate and the second track 142 is for transporting a processed substrate.
  • the substrate transport direction is exemplarily indicated by arrows 15 in FIG. 4.
  • the one or more substrates are transported while being supported by a carrier.
  • the one or more substrates may be in a substantially vertical position.
  • substantially vertical is to be understood, particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction or orientation of ⁇ 20° or below, e.g. of ⁇ 10° or below. This deviation can be provided for example because a substrate support or carrier with some deviation from the vertical orientation might result in a more stable substrate position.
  • a facing down substrate orientation can be beneficial for reducing particles on the substrate, particularly during material deposition.
  • the passive cooling device 151 may be provided by a radiation absorbing surface 153 directed for feeing a substrate to be transported, particularly the processed substrate, past the passive cooling device 151. Accordingly, typically the radiation absorbing surface 153 is directed towards the second track 142. According to embodiments, the area A RAS of the radiation absorbing surface 153 at least substantially corresponds to the substrate area A s of the substrate to be cooled. In other words, the area A RAS of the radiation absorbing surface 153 can be 0.8x A s £ A RAS £ 1.2xA s , particularly 0.9xA s £ A RAS £ 1.1xA s .
  • the radiation absorbing surface 153 may be provided by a wall arranged between the first track 141 and the second track 142.
  • the wall can be a wall of a volume reducer.
  • A“volume reducer” can be understood as an element arranged within a substrate chamber for reducing the free space inside the substrate chamber. Providing a volume reducer can be beneficial for reducing the time for providing vacuum or pre-vacuum conditions inside the substrate chamber.
  • the radiation absorbing surface 153 can be a dark or black coated surface.
  • the radiation absorbing surface has an emissivity coefficient e of e 3 0.7.
  • the radiation absorbing surface may have an emissivity coefficient e of e 3 0.8, more particularly an emissivity coefficient e of e 3 0.9, even more particularly an emissivity coefficient e of e3 0.95.
  • the radiation absorbing surface can be provided by a dark coating, particularly a layer of dark paint, such as a paint being black or blue in color.
  • a passive cooling device 151 with a radiation absorbing surface 153 as described herein, an increased heat flux from a substrate to the passive cooling device 151 can beneficially be provided.
  • the emissivity coefficient e depends on the material and may vary with the temperature T and with the wavelength of the radiation emitted.
  • the active cooling device 155 may include one or more active cooling elements 156.
  • the active cooling device 155 is provided at or within a wall arranged between the first track 141 and the second track 142.
  • the wall of the active cooling device may also be referred to as“radiation shield” or“radiation wall”, because the wall of the active cooling device is typically arranged and configured for shielding heat from a heating device 160, as exemplarily described with reference to FIG. 4.
  • FIG. 5B showing a schematic perspective view of a second chamber 102 according to embodiments which can be combined with other embodiments described herein
  • the active cooling device 155 may include one or more active cooling elements 156.
  • the active cooling device 155 is provided at or within a wall arranged between the first track 141 and the second track 142.
  • the wall of the active cooling device may also be referred to as“radiation shield” or“radiation wall”, because the wall of the active cooling device is typically arranged and configured for shielding heat from a heating device 160, as exemplarily described with reference
  • the one or more active cooling elements 156 can include one or more tubes 157 through which cooling fluid can be pumped to provide the cooling.
  • the tubes 157 can be of a meandering shape which can be beneficial for improving the cooling efficiency.
  • the tubes are connected to a reservoir of cooling liquid.
  • the substrate processing system 100 includes a load lock chamber 110, a pre-heating chamber 121 connected to the load lock chamber 110, and a substrate transportation system 140.
  • the substrate transportation system 140 includes a first track 141 for transporting an unprocessed substrate. Additionally, the substrate transportation system 140 includes a second track 142 for transporting a processed substrate.
  • the substrate transportation system is provided in the load lock chamber 110 and the pre-heating chamber 121. At least one of the load lock chamber 110 and the pre-heating chamber 121 include one or more substrate cooling devices 150 for cooling the processed substrate.
  • the one or more substrate cooling devices 150 include at least one device selected from the group consisting of an active cooling device and a passive cooling device.
  • the one or more substrate cooling devices 150 are arranged between the first track 141 and the second track 142.
  • the load lock chamber includes a passive cooling device 151 arranged between the first track 141 and the second track 142, while the pre-heating chamber 121 includes an active cooling device 155 arranged between the first track 141 and the second track 142.
  • the substrate chamber 130 includes a substrate transportation system 140 having a first track 141 and a second track 142. Additionally, the substrate chamber 130 includes a substrate cooling device 150 arranged between the first track 141 and the second track 142.
  • the substrate cooling device may include an active cooling device and/or a passive cooling device.
  • the passive cooling device 151 can be provided by a radiation absorbing surface 153 oriented for facing a processed substrate.
  • the active cooling device can be provided by one or more active cooling elements provided at or within a wall arranged between the first track 141 and the second track 142. Accordingly, it is to be understood that the substrate chamber 130 can be a first chamber 101 or a second chamber 102 as described herein.
  • the method includes providing a cooling of the substrate in one or more substrate chambers 130 by using a one or more substrate cooling devices 150 arranged between a first track 141 and a second track 142 of a substrate transportation system 140.
  • the one or more substrate chambers can include a first chamber 101 and a second chamber 102 connected to the first chamber 101.
  • the one or more substrate cooling devices 150 typically include at least one of an active cooling device and a passive cooling device.
  • providing the cooling of the substrate includes providing a first cooling of the substrate (represented by block 210 in FIG. 7) in the second chamber 102.
  • the first cooling can be provided when moving the processed substrate past an active cooling device 155.
  • the first cooling can be a stationary cooling, i.e. the substrate is stopped in front of the active cooling device 155.
  • the second chamber 102 can be a high-vacuum module 184.
  • the second chamber 102 can be connected to a first chamber 101, e.g. a pre-vacuum module, and on an opposite side, the second chamber 102 can be connected, for example via one or more transfer modules 180 or directly, to a one or more processing modules 190.
  • the method may include transporting the substrate (represented by block 220 in FIG. 7) from the second chamber 102 to the first chamber 101 being connected to the second chamber 102. Further, the method can include providing a second cooling to the substrate (represented by block 230 in FIG. 7) in the first chamber 101.
  • the second cooling can be provided when moving the processed substrate past a passive cooling device 151.
  • the second cooling can be a stationary cooling, i.e. the substrate is stopped in front of the passive cooling device 151.
  • the active cooling device 155 is provided between a first track 141 and a second track 142 provided in the second chamber 102.
  • the passive cooling device 151 is provided between the first track 141 and the second track 142 provided in the first chamber 101.
  • the passive cooling device 151 can be provided by a radiation absorbing surface 153 oriented for facing the substrate.
  • the substrate to be cooled is a processed substrate, i.e. a substrate transported from the one or more processing modules to the atmospheric module 170.
  • an improved substrate processing system compared to the state of the art, an improved substrate chamber, and an improved method of cooling a substrate are provided.
  • embodiments of the present disclosure provide for improved cooling efficiency at lower operating and maintaining costs.
  • substrate handling e.g. by a robot at a substrate pick up station, can be improved such that substrate damage or breakage can be avoided.
  • This written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any apparatus or system and performing any incorporated methods.

Abstract

A substrate processing system (100) is described. The substrate processing system (100) includes one or more substrate chambers comprising a substrate transportation system (140). Further, the substrate processing system (100) includes one or more substrate cooling devices (150) arranged between a first track (141) and a second track (142) of the substrate transportation system (140). Additionally, a substrate chamber for a vacuum processing system, and a method for cooling a processes substrate is described.

Description

SUBSTRATE PROCESSING SYSTEM, SUBSTRATE CHAMBER FOR A VACUUM PROCESSING SYSTEM, AND METHOD OF COOLING A
SUBSTRATE
TECHNICAL FIELD
[0001] Embodiments of the present disclosure relate to substrate processing systems, particularly vacuum processing systems for processing one or more substrates in an essentially vertical orientation, e.g. for display production. Further embodiments of the present disclosure relate to substrate chambers for vacuum processing systems. More specifically, embodiments of the present disclosure relate to vacuum processing systems and substrate chambers having a substrate cooling device. Yet further embodiments of the present disclosure relate to methods of cooling a substrate.
BACKGROUND
[0002] Techniques for layer deposition on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition. A sputter deposition process can be used to deposit a material layer on the substrate, such as a layer of a conducting material or an insulating material. Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a sputter deposition process. Further applications include insulating panels, substrates with TFT, color filters or the like.
[0003] Substrate processing systems may include an atmospheric portion, e.g. a clean room, one or more vacuum chambers and a load lock chamber for loading substrates from the atmospheric portion to the one or more vacuum chambers. During processing, the substrates are typically exposed to elevated temperatures. After processing, typically the processed substrates are cooled. Accordingly, typically the temperature in the individual chambers of the substrate processing systems varies. Handling of thin substrates, particularly thin large area substrates, at elevated and/or under changing temperatures is challenging. In conventional processing systems, cooling is typically provided by introducing a cooling gas into the substrate chamber. However, cooling gas cooling systems have some disadvantages with respect to cooling efficiency, operating and maintaining costs. For example, the cooling gases typically used, e.g. helium, are quite expensive. Further, for effective cooling, large amounts of cooling gas need to be used.
[0004] Accordingly, there is a continuing demand for improved substrate cooling systems which at least partially overcome some of the problems of the state of the art, e.g. with respect to cooling efficiency and cost of ownership.
SUMMARY
[0005] In light of the above, a substrate processing system, a substrate chamber for a vacuum processing system, and a method of cooling a substrate according to the independent claims are provided. Further aspects, advantages, and features are apparent from the dependent claims, the description, and the accompanying drawings.
[0006] According to an aspect of the present disclosure, a substrate processing system is provided. The substrate processing system includes one or more substrate chambers comprising a substrate transportation system. Further, the substrate processing system includes one or more substrate cooling devices arranged between a first track and a second track of the substrate transportation system.
[0007] According to another aspect of the present disclosure, a substrate processing system is provided. The substrate processing system includes a load lock chamber, a pre-heating chamber connected to the load lock chamber, and a transportation system. The transportation system has a first track for transporting an unprocessed substrate. Additionally, the transportation system has a second track for transporting a processed substrate. The transportation system is provided in the load lock chamber and the pre-hearing chamber. At least one of the load lock chamber and the pre-heating chamber includes one or more substrate cooling devices for cooling the processed substrate.
[0008] According to a further aspect of the present disclosure, a substrate chamber for a vacuum processing system is provided. The substrate chamber includes a substrate transportation system having a first transportation track and a second transportation track. Further, the substrate chamber includes a cooling device arranged between the first transportation track and the second transportation track.
[0009] According to another aspect of the present disclosure, a method of cooling a substrate is provided. The method includes providing a cooling of the substrate in one or more substrate chambers by using a one or more substrate cooling devices arranged between a first track and a second track of a substrate transportation system.
[0010] According to a further aspect of the present disclosure, a method of manufacturing a coated substrate, particularly for manufacturing an electronic device, is provided. The method includes using at least one of a substrate processing system according to any embodiments described herein and a substrate chamber according any embodiments described herein.
[0011] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing the described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:
FIG. 1 shows a schematic sectional top view of a substrate processing system according to embodiments described herein;
FIGS. 2 to 4 show schematic sectional top views of a substrate processing system according to further embodiments described herein;
FIG. 5A shows a schematic perspective view of a first chamber of a substrate processing system according to embodiments described herein;
FIG. 5B shows a schematic perspective view of a second chamber of a substrate processing system according to embodiments described herein;
FIG. 6A shows a schematic sectional top view of a substrate chamber for a vacuum processing system according to embodiments described herein;
FIG. 6B shows a schematic perspective view of a substrate chamber for a vacuum processing system according to embodiments described herein; and
FIG. 7 shows a flowchart for illustrating a method of cooling a processed substrate according to embodiments described herein.
DETAILED DESCRIPTION OF EMBODIMENTS
[0013] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.
[0014] With exemplary reference to FIG. 1, a substrate processing system 100 according to the present disclosure is described. According to embodiments which can be combined with other embodiments described herein, the substrate processing system 100 includes one or more substrate chambers 105 comprising a substrate transportation system 140. Further, the substrate processing system 100 includes one or more substrate cooling devices 150 arranged between a first track 141 and a second track 142 of the substrate transportation system 140. Typically, the one or more substrate cooling devices 150 have a cooling surface 154 oriented for facing a substrate 10 to be cooled. In particular, the area Acs of the cooling surface 154 at least substantially corresponds to the substrate area As of the substrate 10 to be cooled. In other words, the area Acs of the cooling surface 154 can be 0.8 x As £ Acs £ 1.2x As, particularly 0.9xAs £ Acs £ 1.1 xAs.
[0015] Accordingly, compared to the state of the art, an improved substrate processing system can be provided. In particular, by providing a processing system with one or more substrate cooling devices as described herein, a more effective substrate cooling at lower costs can be provided. Further, providing a substrate cooling device between a first and a second substrate transportation track has the advantage that the cooling device may also function as a radiation wall, e.g. when an unprocessed substrate on the first track is heated while a processed substrate on the second track is cooled. Accordingly, with the substrate processing system as described herein, additional cooling chambers can be avoided. Thus, embodiments as described herein provide for a more efficient substrate cooling while at the same time enabling a compact processing system layout with a small footprint, such that short substrate processing tact times can be realized. Further, it is to be noted that substrate cooling provides for improved substrate handling, particularly after substrate processing when the substrate exits the processing system. For instance, with embodiments described herein, slippage of a robot fork for picking up the processed substrates can be avoided, such that substrate damage or breakage can substantially be eliminated. [0016] As exemplarily shown in FIG. 1, the first track 141 and the second track 142 typically extend in a substrate transport direction 11. Further, in FIG. 1 a lateral direction 12 and a vertical direction 13 are indicated. Accordingly, it is to be understood that the substrate transport direction 11 and the lateral direction 12 define a horizontal plane. Typically, the one or more substrate cooling devices 150 are configured as a wall extending in the vertical direction 13. Further, the one or more substrate cooling devices 150 typically extend in the substrate transport direction 11 over at least half of the substrate chamber length L.
[0017] As exemplarily shown in FIG. 1, the one or more substrate cooling devices 150 can be provided at a first lateral distance D1 from the first track 141 and at a second lateral distance D2 from the second track 142. For example, the first lateral distance D1 and the second lateral distance D2 can be substantially equal. Accordingly, the one or more substrate cooling devices 150 may be arranged substantially in the middle between the first track 141 and the second track 142.
[0018] Before various further embodiments of the present disclosure are described in more detail, some aspects with respect to some terms used herein are explained.
[0019] In the present disclosure, a “substrate processing system” can be understood as a system configured for substrate processing, particularly for material deposition on a substrate. For example, the substrate processing system can be an in-line processing system having a plurality of chambers connected to each other.
[0020] In particular, an in-line processing system can be understood as an arrangement of two or more vacuum chambers arranged in line. Further, an in-line processing system can be configured for the position of one or more layers on a vertical substrate. Accordingly, the substrate processing system can be a vertical substrate processing system, i.e. configured for processing substrates in a substantially vertical substrate orientation. For instance, one or more layers can be deposited in a stationary deposition process or a dynamic deposition process. The deposition process can be a PVD-process, e.g. sputter process, or a CVD process. Yet further, it is to be noted that typically the substrate processing system is a vacuum processing system having one or more chambers configured for providing vacuum conditions.
[0021] In the present disclosure, a“substrate” can be understood as a substrate for material deposition, particularly deposition of one or more layers, e.g. for display manufacturing. For example, substrates as described herein shall embrace substrates which are typically used for an LCD (Liquid Crystal Display), a PDF (Plasma Display Panel), and the like. Typically, the substrate is held or supported by a carrier. Accordingly, the carrier may be loaded with the substrate. For instance, the substrate may be present in a substrate receiving area of the carrier.
[0001] The term“substrate” as used herein shall particularly embrace inflexible substrates, e.g., glass plates and metal plates. However, the present disclosure is not limited thereto, and the term“substrate” can also embrace flexible substrates such as a web or a foil. According to some embodiments, the substrate can be made of any material suitable for material deposition. For instance, the substrate can be made of a material selected from the group consisting of glass (for instance soda- lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials, mica or any other material or combination of materials which can be coated by a deposition process. For example, the substrate can have a thickness of 0.1 mm to 1.8 mm, such as 0.7 mm, 0.5 mm or 0.3 mm. In some implementations, the thickness T of the substrate may be 5 pm £ T £ 700 pm.
[0022] According to some embodiments, which can be combined with other embodiments described herein, the substrate is a large area substrate. The large area substrate can have a size of at least 0.01 m2, specifically at least 0.1 m2, and more specifically at least 0.5 m2. For instance, a large area substrate can be GEN 4.5, which corresponds to about 0.67 m2 substrates (0.73 x 0.92m), GEN 5, which corresponds to about 1.4 m2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
[0023] In the present disclosure, a“substrate chamber” can be understood as a chamber configured for receiving a substrate as described herein. In particular, a “substrate chamber” as described herein is configured for receiving one or more substantially vertically arranged substrates. Further, a“substrate chamber” as described herein is typically configured for providing vacuum conditions in the interior of the substrate chamber.
[0024] In the present disclosure, a“substrate transportation system” can be understood as a system configured for transporting one or more substrates within the substrate processing system. In particular, the substrate transportation system is typically configured for transporting the substrate held or supported by a substrate carrier. As exemplarily described with reference to FIG. 4, the substrate transportation system typically includes one or more paths, e.g. a first track and a second track, for transporting the substrate within the substrate processing system. In particular, the first track can be a track configured for transporting an unprocessed substrate, e.g. from an entry of the substrate processing system towards a substrate processing chamber. The second track can be a track configured for transporting a processed substrate, e.g. from the substrate processing chamber towards an exit of the substrate processing system. The first track and the second track may also be referred to as substrate transportation tracks, respectively. A “track” can be understood as a guiding structure, e.g. a guide rail, for guiding the substrate along the substrate transport direction. Accordingly, a“track” can be understood as a mechanical structure. Further, it is to be noted that the substrate transportation system can be a contactless transportation system, e.g. based on magnetic levitation.
[0025] For instance, as described in more detail with reference to FIG. 4, the first track can be provided for transporting an unprocessed substrate towards a processing module, also referred to as a substrate processing chamber. The second track can be provided for transporting a processed substrate from the processing module towards an atmospheric module. Typically, the second track is laterally displaced with respect to the first track. For instance, the first track and the second track can be substantially parallel to each other. Accordingly, it is to be understood that the substrate transportation system can be configured for transporting one or more substrates from an atmospheric module through one or more transfer modules to one or more processing modules and vice versa.
[0026] In the present disclosure, a“substrate cooling device” can be understood as a device configured for providing a cooling of a substrate. In particular, typically the substrate cooling device is arranged and configured for removing heat from a substrate. In other words, the substrate cooling device can be a device which can take up thermal energy from a substrate. Accordingly, it is to be understood that by providing a substrate cooling device as described herein, a heat flux from the substrate to the substrate cooling device is achieved such that the substrate can be cooled. In particular, in contrast to conventional cooling systems in which a cooling gas is introduced into the substrate chamber, the substrate cooling device as described herein is a hardware device provided in the interior of the one or more substrate chambers as described herein.
[0027] With exemplary reference to FIG. 2, according to embodiments which can be combined with other embodiments described herein, the one or more substrate chambers 105 include a first chamber 101 connected to a second chamber 102. The first chamber 101 and the second chamber 102 can be connected via a valve, e.g. a gate valve 115. In the present disclosure, a“gate valve” can be understood as a mouth which allows for a vacuum seal to an adjacent vacuum chamber. In particular, as exemplarily shown in FIG. 3, the one or more substrate cooling devices 150 include an active cooling device 155 provided in the second chamber 102.
[0028] In the present disclosure, an“active cooling device” can be understood as a device which is actively cooled, for example by employing a cooling liquid such as water. For instance, the active cooling device can include one or more tubes through which cooling fluid can be pumped to provide the cooling. In particular, the tubes can be of a meandering shape which can be beneficial for improving the cooling efficiency. Typically, the tubes are connected to a reservoir of cooling liquid. Accordingly, it is to be understood that the active cooling device may include a closed loop cooling circuit.
[0029] As exemplarily shown in FIG. 3, according to embodiments which can be combined with other embodiments described herein, the one or more substrate cooling devices 150 may include a passive cooling device 151 provided in the first chamber 101. In the present disclosure, a “passive cooling device” can be understood as a device configured for taking up heat without additional active components or elements, such as tubes with cooling liquid. In particular, as described in more detail with reference to F1G.5, the passive cooling device 151 typically includes a radiation absorbing surface 153, e.g. provided by a dark or black colored surface. In particular, the radiation absorbing surface may be provided by a coating, layer, or foil. According to an example, the radiation absorbing surface 153 may be provided by one or more stickers.
[0030] Accordingly, it is to be understood that by providing a combination of the active cooling device with the passive cooling device beneficially provides for achieving effective cooling of a substrate to be cooled.
[0031] According to embodiments which can be combined with other embodiments described herein, the first chamber 101 is a load lock chamber 110, also referred to as load lock module or pre-vacuum module herein, and the second chamber 102 is a pre-heating chamber 121. Accordingly, the second chamber 102 may include a heating device 160 for preheating an unprocessed substrate, as exemplarily shown in FIG. 4.
[0032] Accordingly, beneficially the first chamber 101 and the second chamber 102 have a dual function. In particular, when an unprocessed substrate enters the processing system, the first chamber 101 functions as a pre-vacuum module. After processing, the first chamber 101 provides for a second cooling. The second chamber 102 provides for pre-heating of an unprocessed substrate as well as for a first cooling of the processed substrate after processing. [0033] FIG. 4 shows a more detailed layout of a substrate processing system according to embodiments described herein which can be combined with other embodiments described herein. As shown in FIG. 4, the substrate processing system 100 may include modules. Modules can be or include chambers. The substrate processing system can include one or more atmospheric modules 170. Further, typically a robot substrate pick-up station 171 is provided. The atmospheric modules may include a swing module 172. Typically, the swing module 172 is configured for bringing the one or more substrates from a horizontal position into a substantially vertical position. Furthermore, the processing system may include one or more load lock modules 174. A load lock module may also be referred to herein as a“pre-vacuum module”. Typically, the first chamber 101 as described herein is a load lock module.
[0034] Further, the processing system may include one or more transfer modules 180. The one or more transfer modules 180 may include one or more high- vacuum modules 184. Typically, the second chamber 102 as described herein is a high-vacuum module 184. Further, as exemplarily shown in FIG. 4, the substrate processing system 100 typically includes one or more processing modules 190.
[0035] It is to be understood that the one or more load lock modules 174, the one or more transfer modules 180, and the one or more processing modules 190 are typically configured for providing vacuum conditions in the respective module. Accordingly, vacuum conditions may be applied to the one or more processing modules 190 and/or the transfer modules 180 and/orthe load lock modules 174.
[0036] Vacuum conditions as used herein include pressure conditions in the range of below 10-1 mbar or below 10-3 mbar, such as 10-7 mbar to 10-2 mbar. For example, vacuum conditions in the load lock module may be switched between atmospheric pressure conditions and subatmospheric pressure conditions, e.g. in a range at or below 10-1 mbar. For transferring a substrate into a high vacuum module, the substrate may be inserted into the load lock module provided at atmospheric pressure, the load lock module may be sealed, and subsequently may be set at a subatmospheric pressure in the range below 10-1 mbar. Subsequently, an opening between the load lock chamber and the high vacuum module may be opened, and the substrate may be inserted into the high vacuum module, e.g. to be transported into the processing module.
[0037] Further, vacuum conditions in the processing modules may include process pressure conditions at or below 10-2 mbar, such as 10-3 mbar to 10-4 mbar. Base pressure conditions in the processing modules may be in the range of 10-7 mbar to 10-6 mbar, particularly in the range of 10-7 mbar to 5x 10-6 mbar. Vacuum conditions may be applied through the use of vacuum pumps or other vacuum creating techniques.
[0038] As exemplarily shown in FIG. 4, according to embodiments which can be combined with other embodiments described herein, the atmospheric module 170 may be connected to the one or more transfer modules 180. In particular, a load lock module 174 may connect the atmospheric module and the one or more high- vacuum modules 184. The one or more high-vacuum modules 184 are typically connected to the one or more processing modules 190. The load lock module or chamber may assist in equalizing pressure differences between modules. For example, atmospheric pressure is applied in one module and a vacuum is applied in the module which is connected to the one module via the load lock module.
[0039] Accordingly, it is to be understood that the pre-vacuum module may be arranged between the atmospheric module and the one or more high vacuum modules. The atmospheric module may include atmospheric conditions. For example, the air pressure in the load module may include atmospheric air pressure. Thus, particles, like e.g. O2, H2O and N2 may be present in the atmospheric module or generally outside one of the vacuum chambers. The pre-vacuum module may include different pressure conditions compared to the atmospheric module. For example, the pre-vacuum chamber includes lower pressure conditions. The pressure in the pre-vacuum chamber may be below 10-1 mbar. The pre-vacuum chamber may be connected to one or more high vacuum modules. The one or more processing modules 190 may include different pressure conditions compared to the atmospheric module and/or the pre-vacuum module. [0040] With exemplary reference to FIG. 4, according to embodiments which can be combined with other embodiments described herein, the one or more processing modules 190 or chambers contain one or more deposition sources 195. If more than one deposition source is present, the deposition sources may be arranged in a row. For example, the deposition sources can be arranged next to each other. The deposition sources may extend vertically in length. As exemplaiily indicated by arrow 191, typically a track switch device is provided in the one or more processing modules 190. The track switch device is configured for transferring a substrate from the first track 141 to the second track 142.
[0041] According to embodiments, the one or more deposition sources may be rotatably fixed to a bottom side of the processing module. Particularly, two to ten deposition sources may be present in the one or more processing chambers. More particularly, three to seven deposition sources may be present in the one or more processing chambers.
[0042] Processing of a substrate may be understood as transferring material to a substrate. For example, deposition material may be deposited on the substrate, for example, by a CVD process or a PVD process, such as sputtering or evaporation. The substrate may include a deposition material receiving side. The deposition material receiving side of the substrate may be regarded as the side of the substrate feeing a deposition source. Further, processing of a substrate may also include transportation of the substrate from one module to another module of the processing system, particularly by using a substrate transportation system as described herein.
[0043] As exemplaiily shown in FIG. 4, according to embodiments which can be combined with other embodiments described herein, the substrate processing system may include a heating device 160 for heating the substrate to be processed. For instance, the one or more transfer modules 180 may include a heating device 160. In particular, the second chamber 102 can include a heating device 160 for preheating an unprocessed substrate. As shown in FIG. 4, typically the heating device 160 is arranged between the first track 141 and an outer wall 102W of the second chamber 102. Although not explicitly shown, additionally or alternatively, the first chamber 101 may include a heating device. Accordingly, heating may also be carried out in the pre-vacuum chamber. For instance, heating in the pre-vacuum chamber can be carried out statically. Static heating is to be understood as a heating arrangement that is stationary, for example, at a wall of the chamber. It may also be understood as a heating arrangement that is stationary, attached to a wall of the chamber. Stationary heating may include that the substrate is stopped in front of the heating device.
[0044] Heating the substrate in the pre-vacuum chamber and/or the high-vacuum modules has the advantage that particles may be removed in the beginning of substrate processing. Thus, spreading of particles to subsequent chambers is prevented more effectively. Further, degassing of the substrate and/or the substrate carrier is promoted. Thus, an improved process stability and performance can be achieved.
[0045] Further, with exemplary reference to FIG. 4, it is to be understood that the substrate processing system 100 typically includes a substrate transportation system 140 for transporting one or more substrates through the processing system. Particularly, the substrate transportation system 140 may include transportation paths, e.g. a first track 141 and a second track 142, extending through the processing system. For example, the one or more substrates may be transported from the atmospheric module to the one or more processing modules and vice versa. In other words, the one or more substrates may circulate through the substrate processing system, particularly between the atmospheric module and the one or more processing modules. Accordingly, it is to be understood that the first track 141 is for transporting an unprocessed substrate and the second track 142 is for transporting a processed substrate. The substrate transport direction is exemplarily indicated by arrows 15 in FIG. 4.
[0046] Typically, the one or more substrates are transported while being supported by a carrier. For example, during a deposition process and/or during transportation, the one or more substrates may be in a substantially vertical position. As used throughout the present disclosure,“substantially vertical” is to be understood, particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction or orientation of ±20° or below, e.g. of ±10° or below. This deviation can be provided for example because a substrate support or carrier with some deviation from the vertical orientation might result in a more stable substrate position. Further, a facing down substrate orientation can be beneficial for reducing particles on the substrate, particularly during material deposition.
[0047] With exemplary reference to FIG. 5A showing a schematic perspective view of a first chamber 101 according to embodiments which can be combined with other embodiments described herein, the passive cooling device 151 may be provided by a radiation absorbing surface 153 directed for feeing a substrate to be transported, particularly the processed substrate, past the passive cooling device 151. Accordingly, typically the radiation absorbing surface 153 is directed towards the second track 142. According to embodiments, the area ARAS of the radiation absorbing surface 153 at least substantially corresponds to the substrate area As of the substrate to be cooled. In other words, the area ARAS of the radiation absorbing surface 153 can be 0.8x As £ ARAS £ 1.2xAs, particularly 0.9xAs £ ARAS £ 1.1xAs.
[0048] In particular, the radiation absorbing surface 153 may be provided by a wall arranged between the first track 141 and the second track 142. For instance, the wall can be a wall of a volume reducer. A“volume reducer” can be understood as an element arranged within a substrate chamber for reducing the free space inside the substrate chamber. Providing a volume reducer can be beneficial for reducing the time for providing vacuum or pre-vacuum conditions inside the substrate chamber.
[0049] More specifically, the radiation absorbing surface 153 can be a dark or black coated surface. For instance, typically the radiation absorbing surface has an emissivity coefficient e of e ³ 0.7. In particular, the radiation absorbing surface may have an emissivity coefficient e of e ³ 0.8, more particularly an emissivity coefficient e of e ³ 0.9, even more particularly an emissivity coefficient e of e³ 0.95. For example, the radiation absorbing surface can be provided by a dark coating, particularly a layer of dark paint, such as a paint being black or blue in color.
[0050] Accordingly, by providing a passive cooling device 151 with a radiation absorbing surface 153 as described herein, an increased heat flux from a substrate to the passive cooling device 151 can beneficially be provided.
[0051] In the present disclosure, the emissivity coefficient e indicates the radiation of heat from a 'grey body' according to the Stefan-Boltzmann Law, compared with the radiation of heat from an ideal 'black body' with the emissivity coefficient e = 1. The emissivity coefficient e depends on the material and may vary with the temperature T and with the wavelength of the radiation emitted. For many purposes, it is sufficient to assume that for dull black surfaces, emissivity is approximately 1; for surfaces such as painted metal, the emissivity coefficient e is about e ³ 0.9; for rough un-polished metal surfaces, the emissivity coefficient e typically varies from e = 0.7 to e = 0.25; and for polished metal surfaces, the emissivity coefficient e is typically below 0.05, i.e. e £ 0.05. These values apply at the low and moderate temperatures of about 300 K. For instance, the emissivity coefficient of polished copper may be from e = 0.02 to e = 0.05. As another example, the emissivity coefficient of painted or colored surfaces is above e = 0.7, i.e. e ³ 0.7. Typically, painted or colored surfaces have an emissivity coefficient which is even above e = 0.9, i.e. e ³ 0.9.
[0052] With exemplary reference to FIG. 5B showing a schematic perspective view of a second chamber 102 according to embodiments which can be combined with other embodiments described herein, the active cooling device 155 may include one or more active cooling elements 156. Typically, the active cooling device 155 is provided at or within a wall arranged between the first track 141 and the second track 142. The wall of the active cooling device may also be referred to as“radiation shield” or“radiation wall”, because the wall of the active cooling device is typically arranged and configured for shielding heat from a heating device 160, as exemplarily described with reference to FIG. 4. [0053] As exemplarily shown in FIG. 5B, the one or more active cooling elements 156 can include one or more tubes 157 through which cooling fluid can be pumped to provide the cooling. In particular, the tubes 157 can be of a meandering shape which can be beneficial for improving the cooling efficiency. Typically, the tubes are connected to a reservoir of cooling liquid.
[0054] According to an example, which can be combined with other embodiments described herein, the substrate processing system 100 includes a load lock chamber 110, a pre-heating chamber 121 connected to the load lock chamber 110, and a substrate transportation system 140. The substrate transportation system 140 includes a first track 141 for transporting an unprocessed substrate. Additionally, the substrate transportation system 140 includes a second track 142 for transporting a processed substrate. The substrate transportation system is provided in the load lock chamber 110 and the pre-heating chamber 121. At least one of the load lock chamber 110 and the pre-heating chamber 121 include one or more substrate cooling devices 150 for cooling the processed substrate. In particular, the one or more substrate cooling devices 150 include at least one device selected from the group consisting of an active cooling device and a passive cooling device. Typically, the one or more substrate cooling devices 150 are arranged between the first track 141 and the second track 142. In particular, the load lock chamber includes a passive cooling device 151 arranged between the first track 141 and the second track 142, while the pre-heating chamber 121 includes an active cooling device 155 arranged between the first track 141 and the second track 142.
[0055] With exemplary reference to FIGS. 6A and 6B, a substrate chamber 130 for a vacuum processing system according to the present disclosure is described. According to embodiments which can be combined with other embodiments described herein, the substrate chamber 130 includes a substrate transportation system 140 having a first track 141 and a second track 142. Additionally, the substrate chamber 130 includes a substrate cooling device 150 arranged between the first track 141 and the second track 142. [0056] According to embodiments which can be combined with other embodiments described herein, the substrate cooling device may include an active cooling device and/or a passive cooling device. For instance, the passive cooling device 151 can be provided by a radiation absorbing surface 153 oriented for facing a processed substrate. The active cooling device can be provided by one or more active cooling elements provided at or within a wall arranged between the first track 141 and the second track 142. Accordingly, it is to be understood that the substrate chamber 130 can be a first chamber 101 or a second chamber 102 as described herein.
[0057] With exemplary reference to the flowchart shown in FIG. 7, embodiments of a method 200 of cooling a substrate according to the present disclosure are described. According to embodiments, which can be combined with other embodiments described herein, the method includes providing a cooling of the substrate in one or more substrate chambers 130 by using a one or more substrate cooling devices 150 arranged between a first track 141 and a second track 142 of a substrate transportation system 140. In particular, the one or more substrate chambers can include a first chamber 101 and a second chamber 102 connected to the first chamber 101. The one or more substrate cooling devices 150 typically include at least one of an active cooling device and a passive cooling device.
[0058] More specifically, according to embodiments, which can be combined with other embodiments described herein, providing the cooling of the substrate includes providing a first cooling of the substrate (represented by block 210 in FIG. 7) in the second chamber 102. Typically, the first cooling can be provided when moving the processed substrate past an active cooling device 155. Alternatively, the first cooling can be a stationary cooling, i.e. the substrate is stopped in front of the active cooling device 155.
[0059] As exemplarily described with reference to FIG. 4, the second chamber 102 can be a high-vacuum module 184. On one side, the second chamber 102 can be connected to a first chamber 101, e.g. a pre-vacuum module, and on an opposite side, the second chamber 102 can be connected, for example via one or more transfer modules 180 or directly, to a one or more processing modules 190.
[0060] Additionally, the method may include transporting the substrate (represented by block 220 in FIG. 7) from the second chamber 102 to the first chamber 101 being connected to the second chamber 102. Further, the method can include providing a second cooling to the substrate (represented by block 230 in FIG. 7) in the first chamber 101.
[0061] Typically, the second cooling can be provided when moving the processed substrate past a passive cooling device 151. Alternatively, the second cooling can be a stationary cooling, i.e. the substrate is stopped in front of the passive cooling device 151.
[0062] According to embodiments of the method of cooling a substrate which can be combined with other embodiments described herein, the active cooling device 155 is provided between a first track 141 and a second track 142 provided in the second chamber 102. Further, typically the passive cooling device 151 is provided between the first track 141 and the second track 142 provided in the first chamber 101. For example, the passive cooling device 151 can be provided by a radiation absorbing surface 153 oriented for facing the substrate. Typically, the substrate to be cooled is a processed substrate, i.e. a substrate transported from the one or more processing modules to the atmospheric module 170.
[0063] In view of the embodiments of the present disclosure, it is to be understood that, compared to the state of the art, an improved substrate processing system, an improved substrate chamber, and an improved method of cooling a substrate are provided. In particular, embodiments of the present disclosure provide for improved cooling efficiency at lower operating and maintaining costs. Further, by cooling a substrate by employing embodiments as described herein, substrate handling, e.g. by a robot at a substrate pick up station, can be improved such that substrate damage or breakage can be avoided. [0064] This written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any apparatus or system and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal language of the claims.
[0065] While the foregoing is directed to embodiments, other and further embodiments may be devised without departing from the basic scope, and the scope is determined by the claims that follow.

Claims

1. A substrate processing system (100), comprising
- one or more substrate chambers (105) comprising a substrate transportation system (140), and
- one or more substrate cooling devices (150) arranged between a first track (141) and a second track (142) of the substrate transportation system (140).
2. The substrate processing system (100) of claim 1, wherein the one or more substrate chambers (105) comprise a first chamber (101) connected to a second chamber (102), and the one or more substrate cooling devices (150) comprising an active cooling device (155) provided in the second chamber (102).
3. The substrate processing system (100) of claim 2, the one or more substrate cooling devices (150) comprising a passive cooling device (151) provided in the first chamber (101).
4. The substrate processing system (100) of claim 2 or 3, the first chamber (101) being a load lock chamber (110) and the second chamber (102) being a preheating chamber (121).
5. The substrate processing system (100) of any of claims 1 to 4, the first track
(141) being for transporting an unprocessed substrate and the second track
(142) being for transporting a processed substrate.
6. The substrate processing system (100) of any of claims 2 to 5, the active cooling device (155) comprising one or more active cooling elements provided at a wall arranged between the first track (141) and the second track (142). 7. The substrate processing system (100) of any of claims 3 to 6, the passive cooling device (151) being provided by a radiation absorbing surface (153) directed for feeing the processed substrate.
8. The substrate processing system (100) of claim 7, the radiation absorbing surface having an emissivity coefficient e of e ³ 0.7.
9. The substrate processing system (100) of any of claims 2 to 8, the second chamber (102) comprising a heating device (160) for preheating an unprocessed substrate.
10. A substrate processing system (100), comprising
- a load lock chamber (110);
- a pre-heating chamber (121) connected to the load lock chamber (110); and
- a substrate transportation system (140) having a first track (141) for transporting an unprocessed substrate and a second track (142) for transporting a processed substrate, the substrate transportation system (140) being provided in the load lock chamber (110) and the pre-heating chamber (121), wherein at least one of the load lock chamber (110) and the pre-heating chamber (121) comprise one or more substrate cooling devices (150) for cooling the processed substrate.
11. A substrate processing system (100) of claim 10, the one or more substrate cooling devices (150) comprising at least one device selected from the group consisting of an active cooling device and a passive cooling device, particularly the one or more substrate cooling devices being arranged between the first track (141) and the second track (142). 12. A substrate chamber (130) for a vacuum processing system, the substrate chamber comprising a substrate transportation system (140) having a first track (141) and a second track (142), and a substrate cooling device (150) arranged between the first track (141) and the second track (142).
13. The substrate chamber (130) of claim 12, the substrate cooling device (150) including an active cooling device and/or a passive cooling device, particularly the passive cooling device being provided by a radiation absorbing surface (153) oriented for feeing a processed substrate.
14. A method of cooling a substrate, comprising:
- providing a cooling of the substrate in one or more substrate chambers (130) by using a one or more substrate cooling devices (150) arranged between a first track (141) and a second track (142) of a substrate transportation system (140).
15. The method of claim 14, wherein the one or more substrate chambers (130) comprise a first chamber (101) and a second chamber (102) connected to the first chamber (101), and wherein the one or more substrate cooling devices (150) comprising at least one of an active cooling device and a passive cooling device.
16. Method of manufacturing a coated substrate, particularly for an electronic device, comprising using ate least one of a substrate processing system (100) according to any of claims 1 to 11 and a substrate chamber (130) according to any of claims 12 to 13.
PCT/US2019/013739 2019-01-16 2019-01-16 Substrate processing system, substrate chamber for a vacuum processing system, and method of cooling a substrate WO2020149837A1 (en)

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