JP5669306B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus, and is particularly useful when applied to the formation of an optical film.

  Conventionally, an optical device such as a flat panel display provided with an optical film such as an antireflection film or a transparent conductive film is known. Such an optical film is formed, for example, by stacking a plurality of layers of a silicon oxide film, a silicon nitride film, an indium tin oxide film, and the like on various substrates such as a glass substrate by a sputtering method (see, for example, Patent Document 1). ).

  In recent years, flat panel displays have become mainstream as display devices, and it has become an important issue to improve yield, shorten tact time, and improve productivity. Therefore, in order to achieve such a problem, a so-called in-line film forming apparatus has been proposed (for example, see Patent Document 2).

  The in-line film forming apparatus has a configuration in which a load lock chamber and a plurality of film forming chambers are connected in series, and a substrate transport path is provided in these chambers. According to such a film forming apparatus, there is an advantage that a plurality of films can be continuously formed in one film forming apparatus even on a large substrate.

JP 2006-106239 A JP 2010-209434 A

  However, when an optical film is formed on a substrate, when an optical film is formed on a thin film, or when another thin film is formed on an optical film, the adhesion between the thin films is weak depending on the material. There is a risk that the film will peel off. Further, in the sputtering method as in the technique according to Patent Document 1, there is a possibility that the thin film is damaged by ions. Patent Document 2 does not particularly disclose a configuration capable of improving the adhesion between such thin films and reducing damage caused by ions.

  Such a problem is not limited to the case where an optical film is formed, but generally exists when an arbitrary thin film is formed.

  In view of such circumstances, an object of the present invention is to provide a film forming apparatus that can prevent peeling between thin films and efficiently manufacture a thin film without ion damage.

A first aspect for achieving the above object is to form a thin film on a substrate and a reaction gas supplied into a reaction chamber to contact a catalyst body to generate a radical, and the radical is applied to the substrate. A surface treatment apparatus for supplying and surface-treating the substrate, and the surface treatment apparatus is installed to perform the surface treatment of the substrate before or after the film formation treatment apparatus, An opening provided on one surface of the surface treatment apparatus is sealed, a detachable door, a gas introduction means for introducing a reaction gas into the reaction chamber, and provided in the door and installed in the reaction chamber. A catalyst body that is disposed opposite to the substrate and is heated by energization, wherein the catalyst body is formed in a straight line, both ends are fixed to the upper and lower portions of the door, respectively, and the heated catalyst body is By contacting the reaction gas Radical is generated, the radical, in the film forming apparatus characterized by the surface treatment of the substrate by supplying to the substrate.

  In the first aspect, the adhesion of the thin film formed by the film forming apparatus is improved by the surface treatment, so that peeling of the thin film is prevented. In addition, it is possible to manufacture a thin film that is not damaged by ions generated when a sputtering apparatus or the like is used. Such a thin film can be efficiently formed on the substrate.

In particular, when an optical film is formed as a thin film, surface treatment can be performed without deteriorating optical characteristics. Thereby, the adhesive force of the other thin film formed on various kinds of optical films can be improved, and a thin film in which peeling is prevented can be formed. In addition, it is possible to better manufacture a thin film that is prevented from being peeled off and that is not damaged by ions.
Furthermore, maintainability such as removing the door and replacing the catalyst body is improved. Moreover, since the both ends of a catalyst body are fixed to the upper part and lower part of a door, the catalyst body is stable. This can prevent the catalyst body from being entangled with other members.

According to a second aspect of the present invention, in the film forming apparatus described in the first aspect, the gas introduction unit uniformly supplies radicals generated from the reaction gas to the surface of the substrate disposed in the reaction chamber. A reactive gas supply unit, wherein the reactive gas supply unit includes a distribution pipe that is disposed opposite to an outer edge portion of the substrate and a central portion of the substrate and injects a reactive gas. is there.

In the second aspect, the reactive gas can be uniformly supplied to the reaction chamber, and radicals generated when the reactive gas contacts the catalyst body can be uniformly supplied to the substrate. Thereby, surface treatment can be performed evenly on the substrate.

According to a third aspect of the present invention, in the film forming apparatus described in the first or second aspect, the surface treatment apparatus is configured to bring hydrogen radicals or hydrogen atoms or hydrogen atoms or hydrogen atoms by contacting the reaction gas containing hydrogen or halogen with the catalyst body. In the film forming apparatus, the surface of the substrate is roughened by generating halogen radicals and supplying the hydrogen radicals or halogen radicals to the substrate .

In the third aspect, the surface of the substrate can be roughened with hydrogen radicals or halogen radicals.

According to a fourth aspect of the present invention, there is provided the film forming apparatus according to any one of the first to third aspects, wherein an inner surface constituting a part of the reaction chamber of the door is released from the catalyst body. An antireflection structure for preventing reflection of radiation is provided, and the catalyst body is disposed closer to the substrate than the antireflection structure provided on the inner surface of the door. The film forming apparatus is characterized.

In the fourth aspect, it is possible to suppress the substrate from being overheated by radiation, control the temperature of the substrate to a preferable temperature range, and form a good thin film.

According to a fifth aspect of the present invention, in the film formation apparatus according to any one of the first to fourth aspects, the surface treatment apparatus and the film formation treatment apparatus are connected, and the surface treatment and film formation are performed on the substrate. The film forming apparatus is characterized in that the processing is continuously performed.

In the fifth aspect, an in-line film forming apparatus is provided.

According to a sixth aspect of the present invention, in the film forming apparatus according to any one of the first to fourth aspects, the surface processing apparatus and the film forming processing apparatus are connected via a transfer unit, and are connected to the substrate. A film forming apparatus is characterized by performing surface treatment and film formation.

In the sixth aspect, a cluster-type film forming apparatus is provided.

  ADVANTAGE OF THE INVENTION According to this invention, while preventing the peeling between thin films, the film-forming apparatus which can manufacture efficiently the thin film without ion damage is provided.

1 is a schematic diagram illustrating a configuration of a film forming apparatus according to Embodiment 1. FIG. It is sectional drawing which shows the structure of the surface treatment apparatus which concerns on Embodiment 1. FIG. It is a front view which shows the structure of the surface treatment apparatus which concerns on Embodiment 1. FIG. It is a front view of the door which comprises the surface treatment apparatus concerning Embodiment 1. FIG. 6 is a schematic diagram illustrating a configuration of a film forming apparatus according to Embodiment 2. FIG. It is a schematic diagram which shows the structure of the surface treatment apparatus which concerns on Embodiment 2. FIG. It is a schematic diagram which shows the structure of the film-forming apparatus which concerns on Embodiment 3. FIG.

<Embodiment 1>
An embodiment of the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram showing a configuration of an in-line film forming apparatus according to the present embodiment.

  The in-line film forming apparatus 1 includes a plurality of processing units that perform predetermined processing on the substrate S. Specifically, the film forming apparatus 1 includes a load lock chamber 11, a heating chamber 12, a first film forming processing apparatus 13, a surface processing apparatus 14, a second film forming processing apparatus 15, and an unloading. A lock chamber 16 is provided, which are connected in series via a door valve 17 in this order. Each chamber can independently perform a predetermined treatment in a vacuum.

  The load lock chamber 11 is provided with a vacuum pump (not shown) so that the inside of the load lock chamber 11 is evacuated to a predetermined vacuum level and the vacuum level can be maintained.

  The heating chamber 12 is provided with a vacuum pump (not shown), and the inside of the heating chamber 12 can be evacuated to a predetermined degree of vacuum, and the degree of vacuum can be maintained. The heating chamber 12 is provided with a heating means (not shown) in the center thereof so that the temperature of the substrate S installed in the heating chamber 12 can be raised to a predetermined temperature.

  The first film-formation processing apparatus 13 and the second film-formation processing apparatus 15 include substrate placement units 131 and 151 on which substrates are respectively installed, and film formation unit installation units 132 and 152 on which respective film formation units are installed. Consists of. The substrate placement portions 131 and 151 and the film formation means placement portions 132 and 152 are respectively provided with openings, and both chambers communicate with each other through these openings to form film formation spaces 133 and 153 in which film formation processing is performed. ing. The substrate placement units 131 and 151 are provided with a vacuum pump (not shown), and the insides of the first film forming processing apparatus 13 and the second film forming processing apparatus 15, that is, the film forming spaces 133 and 153 have a predetermined degree of vacuum. It is configured so that it can be evacuated to maintain the degree of vacuum.

  A known film forming means can be used as the film forming means. For example, in the case of forming a film by sputtering, a target and a sputtering gas introduction unit are installed so that the film can be formed. In addition, when a film is formed by the CVD method, a film forming gas introducing unit is provided so that the film can be formed.

  The unload lock chamber 16 is provided with a vacuum pump (not shown) so that the inside of the unload lock chamber 16 can be evacuated to a predetermined vacuum level and the vacuum level can be maintained.

  The surface treatment apparatus 14 includes a reaction chamber 141 having an opening, in which a substrate is installed, and a sealing door 142 that seals the opening of the reaction chamber 141. A surface treatment means is installed in the surface treatment space 143 formed by the reaction chamber 141 and the sealing door 142.

  The surface treatment apparatus 14 is provided with a vacuum pump (not shown) so that the inside of the surface treatment apparatus 14, that is, the surface treatment space 143 is evacuated to a predetermined degree of vacuum, and the degree of vacuum can be maintained. It is configured.

  The surface treatment means supplies a reaction gas into the reaction chamber 141 maintained at a predetermined degree of vacuum, contacts the catalyst gas installed in the reaction chamber 141 with the reaction gas to generate radicals, Although it supplies to the board | substrate S and performs the surface treatment of the board | substrate S, it mentions later for details.

  The in-line type film forming apparatus 1 of the present embodiment is a vertical transfer type vacuum processing apparatus that processes a substrate S while holding the substrate S substantially vertically by a frame-shaped substrate carrier 2. The in-line film forming apparatus 1 is provided with a first transfer path 21 that transfers the substrate S from the load lock chamber 11 to the unload lock chamber 16. The transport means for the substrate S is not particularly limited. For example, two rails are laid on the first transport path 21, and the substrate carrier 2 moves on the rails by wheels provided at the bottom of the substrate carrier 2. It may be configured to be able to. Specifically, a rack is provided on the lower surface of the substrate carrier 2, and the load lock chamber 11, the heating chamber 12, the first film formation processing apparatus 13, the second film formation processing apparatus 15, and the unload lock chamber 16 are provided in the rack. Since a pinion gear that rotates by the rotational force of the motor is provided, the rack and the pinion gear are engaged with each other, and the driving force of the motor is transmitted to the substrate carrier 2 to convey the substrate carrier 2.

  With the film forming apparatus 1 having such a configuration, the substrate S is transported along the first transport path 21 and each process is performed. That is, the substrate S is carried into the load lock chamber 11, heated to a predetermined temperature in the heating chamber 12, and then a predetermined thin film is formed by the first film forming apparatus 13, and the thin film is formed by the surface processing apparatus 14. Surface treatment is performed, and another thin film is formed on the thin film by the second film forming apparatus 15. Then, the substrate S is carried into the unload lock chamber 16, adjusted to atmospheric pressure, and then carried out of the film forming apparatus 1. Thus, since a plurality of films are continuously formed on one substrate, a thin film can be efficiently formed on the substrate.

  Here, the surface treatment apparatus 14 will be described in detail with reference to FIGS.

  As shown in FIG. 2, the surface treatment apparatus 14 includes a reaction chamber 141 and a sealing door 142. The reaction chamber 141 is formed in a concave shape having an opening 144 on one surface. In addition, on both side surfaces of the reaction chamber 141, communication holes 145 that respectively communicate with the film formation spaces 133 and 153 of the first film formation processing apparatus 13 and the second film formation processing apparatus 15 and serve as a passage for the substrate S are provided. Is provided.

  The sealing door 142 seals the opening 144 of the reaction chamber 141 and is detachably provided in the reaction chamber 141. The reaction chamber 141 and the sealing door 142 form a surface treatment space 143 in which the substrate S is accommodated. The surface treatment device 14 is connected to a vacuum pump (not shown) that evacuates the surface treatment space 143 to a vacuum.

  An antireflection structure 146 that prevents reflection of radiation emitted from the catalyst body 40 is provided on the entire inner surface of the sealing door 142 (the surface of the reaction chamber 141 on the opening 144 side). Details of the antireflection structure 146 will be described later.

  The surface treatment apparatus 14 is provided with gas introduction means for supplying a reactive gas into the surface treatment space 143.

  The gas introducing means uniformly supplies the reactive gas to the substrate S, such as a cylinder filled with the reactive gas, a supply pressure regulator, a flow rate regulator, a supply / stop switching valve (not shown), and the like. The reactive gas supply unit 30 is configured.

  FIG. 3 illustrates the configuration of the reactive gas supply unit 30. FIG. 3 is a front view of the reaction chamber 141, but the reaction chamber 141 and the reactive gas supply unit 30 are hatched in order to clarify the relationship between the components.

  The reactive gas supply unit 30 communicates with the supply pipe 31 serving as a reaction gas flow path from the outside to the inside of the reaction chamber 141 and into the supply pipe 31, and has a horizontally-eight-shaped configuration so as to face the substrate S. The distribution pipe 32 is formed. Although not particularly illustrated, the distribution pipe 32 is provided with a plurality of minute injection ports that communicate the flow path inside the distribution pipe 32 with the outside.

  By providing the reactive gas supply unit 30 having such a configuration, the reactive gas supplied from a cylinder or the like is supplied from the injection port of the distribution pipe 32 into the surface treatment space 143 through the supply pipe 31.

  In the present embodiment, the distribution pipe 32 is formed in a figure eight shape so that the reactive gas can be injected not only in the vicinity of the outer edge portion of the substrate S but also in the central portion of the substrate S. Accordingly, the reactive gas can be uniformly supplied to the surface treatment space 143, and radicals generated when the reactive gas comes into contact with the catalyst body 40 described later can be supplied uniformly to the substrate S. .

As the reactive gas, a gas containing hydrogen, for example, H ₂ gas, PH ₃ (phosphine) gas, B ₂ H ₆ (diborane) gas, or NH ₃ (ammonia) gas can be used. A gas containing halogen, for example, NF ₃ gas, CF ₄ gas, C ₃ F ₈ gas, C ₂ F ₆ gas, or F ₂ gas can also be used as the reactive gas.

  As shown in FIGS. 2 and 4, in the surface treatment apparatus 14, the catalyst body 40 is disposed in the surface treatment space 143. Specifically, the catalyst body 40 is formed in a straight line and is attached to the sealing door 142 so as to face the substrate S. In the present embodiment, the substrate S, the distribution pipe 32, and the catalyst body 40 are arranged in this order, and the catalyst body 40 formed in an H shape is used.

  Each end of the catalyst body 40 formed in an H shape has an upper end connected to an upper fixed terminal 41 provided on the sealing door 142, and a lower end connected to the lower fixed terminal 42. Each is connected.

  A DC power supply or an AC power supply (not shown) is connected to the upper fixed terminal 41 and the lower fixed terminal 42. The catalyst body 40 is supplied with electric power through the upper fixed terminal 41 and the lower fixed terminal 42 and is heated to a predetermined temperature.

  Specifically, the catalyst body 40 is heated to a high temperature of about 1000 to 2000 ° C. by energization heating. As the material of the catalyst body 40, any one selected from the group consisting of tungsten, which is a refractory metal, tantalum, iridium and molybdenum, and alloys thereof are used. In addition, metals that do not melt at 1000 ° C. to 2000 ° C., such as copper, iron, stainless steel, nichrome, and the like, can be used.

  In the surface treatment apparatus 14 having such a configuration, the reactive gas is supplied from the gas introduction unit into the surface treatment space 143 through the reactive gas supply unit 30. The reactive gas contacts the catalyst body 40 and is radicalized. For example, when hydrogen gas is used as the reactive gas and tungsten is used as the catalyst body 40, the hydrogen gas in contact with the catalyst body 40 made of tungsten heated to about 1000 ° C. by energization is activated and radicalized. Hydrogen is generated.

  The radicalized hydrogen is supplied to the substrate S, and the substrate S is surface-treated with the radicalized hydrogen. Here, the surface treatment of the substrate S with hydrogen radicals means that at least irregularities are formed on the substrate S by hydrogen radicals.

  That is, in the surface treatment apparatus 14, the substrate S is roughened. The surface of the substrate S is roughened due to the radicalized hydrogen or the like in this way, but is given to the substrate S as compared with the case where the surface is roughened in a hydrogen atmosphere by a plasma CVD apparatus or a sputtering apparatus. There is little damage. This is because ions are generated in the plasma CVD apparatus and the sputtering apparatus, which damages the substrate S, and the surface treatment apparatus 14 of the present invention does not generate ions.

  Thus, the surface treatment apparatus 14 can be roughened without damaging the substrate S.

  Here, as described above, in the film forming apparatus 1, the surface processing apparatus 14 disposed after the first film forming processing apparatus 13 and before the second film forming processing apparatus 15 performs the surface processing of the substrate S. Do.

  That is, the surface treatment apparatus 14 performs surface treatment on the thin film formed on the substrate S by the first film formation treatment apparatus 13. Then, the second film forming apparatus 15 forms another thin film on the roughened thin film by performing this surface treatment. Therefore, since the second film forming apparatus 15 separately forms a thin film on the thin film that has been roughened and has a large contact area, the adhesion between the thin films is improved.

  Thus, in the in-line type film forming apparatus 1, the adhesion between the thin films formed by the first film forming processing apparatus 13 and the second film forming processing apparatus 15 is improved to prevent the peeling of the thin film, and A thin film that is not damaged by ions can be manufactured, and a plurality of thin films can be formed continuously on one substrate S, so that the thin film can be efficiently formed on the substrate S.

  In particular, when an optical film is formed as a thin film, the surface treatment by the surface treatment device 14 does not form the unevenness that deteriorates the optical characteristics. At least unevenness that can be recognized with the naked eye is not formed. As described above, since the unevenness can be formed without deteriorating the optical characteristics, the adhesion of other thin films formed on various types of optical films can be improved, and the thin films that prevent the thin films from peeling off. Can be formed.

The material of such an optical film is not particularly limited. For example, an antireflection film such as SiN, SiO, ITO, SnO ₂ , or ZnO, a metal-based reflection film such as Al or Ag, a thin film made of an acrylic resin, photo An optical film such as a thin film used for the resist can be the target of the surface treatment.

  Here, the temperature of the catalyst body 40 for generating hydrogen radicals may be about 1000 ° C. On the other hand, when a film is formed by activating the gas for film formation with the catalyst body 40, a temperature higher than 1000 ° C. is usually required.

  Since the surface treatment apparatus 14 according to the present invention radicalizes hydrogen gas or the like with the catalyst body 40 and performs the surface treatment with the radicals, no film formation is performed.

  Therefore, the temperature of the catalyst body 40 can be set to a minimum temperature. Since the life of the catalyst body 40 is longer as the temperature is lower and the thermal fatigue is smaller, the surface treatment apparatus 14 of the present invention can keep the life of the catalyst body 40 longer. Thereby, the running cost of the apparatus can be kept low.

  Furthermore, if a film for film formation is supplied to the surface treatment apparatus 14 to perform film formation, the distribution pipe 32 becomes a shadow, and it is difficult to form a film in a region facing the distribution pipe 32 of the substrate S. Therefore, the position, size, and range of the distribution pipe 32 are considerably restricted. However, in the surface treatment apparatus 14 according to the present invention that performs surface treatment without film formation, the entire surface treatment space 143 is not affected by the position, size, and shape of the distribution pipe 32 that is disposed opposite to the substrate S. The reactive gas can be spread over the entire area, and hydrogen radicals can be generated from the reactive gas by the catalyst body 40 and supplied uniformly to the entire substrate S. Thereby, the surface treatment can be performed evenly on the substrate S.

  That is, in the surface treatment apparatus 14, the position of the distribution pipe 32 is not restricted, and the above-described 8-shaped distribution pipe 32 is formed so that the reactive gas can be distributed throughout the surface treatment space 143. The degree of freedom in design is improved.

  Further, in the surface treatment apparatus 14 according to this embodiment, the sealing door 142 forming the surface treatment space 143 is detachable from the reaction chamber 141, and the catalyst body 40 is attached to the sealing door 142. Thereby, the maintainability such as removing the sealing door 142 and replacing the catalyst body 40 is improved. Further, by removing the sealing door 142 and attaching the film forming means installation unit 132 of the first film forming processing apparatus 13 instead, the surface processing apparatus 14 can be easily used as another film forming processing apparatus. be able to.

  Furthermore, by attaching the catalyst body 40 to the sealing door 142, the degree of freedom of attachment is improved as compared with the case where the catalyst body 40 is attached to the reaction chamber 141 side. In addition, since both ends of the catalyst body 40 are fixed to the upper fixed terminal 41 and the lower fixed terminal 42 of the sealing door 142, the catalyst body 40 is stable. Thereby, the catalyst body 40 can be prevented from being entangled with other members.

  Further, as described above, the antireflection structure 146 for preventing the reflection of radiation from the catalyst body 40 is provided on the inner surface of the removable sealing door 142. This prevents radiation from the catalyst body 40 from reflecting the inner surface of the sealing door 142 and heating the substrate S excessively.

  Thereby, overheating of the substrate S can be suppressed, the temperature of the substrate S can be controlled within a preferable temperature range, and a good thin film can be formed.

  Here, the antireflection structure 146 is not particularly limited as long as it does not reflect the radiation from the catalyst body 40 to the substrate S. The following structures are listed. For example, a structure in which the inner surface of the sealing door 142 is covered with a silicon-containing film can be given. According to the silicon-containing film, since radiation from the catalyst body 40 is absorbed, reflection to the substrate S side can be prevented. Further, the antireflection structure 146 may be a structure in which irregularities are provided on the inner surface of the sealing door 142 or the surface of the silicon-containing film provided on the inner surface. According to this, since the optical path length can be increased inside the antireflection structure, radiation can be absorbed or confined more effectively, and reflection of radiation to the substrate S can be prevented more reliably.

<Embodiment 2>
Even when the film forming apparatus of the present invention is applied to a cluster type, the same effects as the film forming apparatus according to the first embodiment can be obtained.

  As shown in FIG. 5, the film forming apparatus 1A according to the present embodiment includes a load lock chamber 50, a first film forming apparatus 51, a surface processing apparatus 52, a second film forming apparatus 53, The load lock chamber 50, the first film forming apparatus 51, the surface processing apparatus 52, and the second film forming apparatus 53 are provided with a transfer chamber 54 that transfers the substrate S and also functions as a load lock chamber. ing.

  A plurality of substrates S to be processed are held substantially horizontally on a substrate tray (not shown). Then, the substrate tray is transported to the film forming apparatus 1A while being mounted on the substrate carrier. That is, in the film forming apparatus 1A of the present embodiment, predetermined processing is simultaneously performed on the plurality of substrates S held substantially horizontally on the substrate tray.

  The load lock chamber 50 is open to the atmosphere, and a substrate tray to be supplied next to the transfer chamber 54 is prepared. In the transfer chamber 54, a transfer robot (not shown) having a transfer arm is provided. When a new substrate tray is supplied from the load lock chamber 50, it is evacuated until a predetermined degree of vacuum is obtained by a vacuum pump (not shown). Then, in a state where the degree of vacuum is maintained, the substrate tray is moved from the transfer chamber 54 by the transfer robot to each of the first film forming apparatus 51, the surface processing apparatus 52, and the second film forming apparatus 53. Be transported.

  The load lock chamber 50, the first film forming apparatus 51, the surface processing apparatus 52, and the second film forming apparatus 53 are arranged around the transfer chamber 54 and are respectively transferred to the transfer chamber via the gate valve 55. 54. Specifically, each of the load lock chamber 50, the first film forming apparatus 51, the surface processing apparatus 52, and the second film forming apparatus 53 corresponds to each side of the transfer chamber 54 having a rectangular outer shape. Are arranged respectively. For example, in this embodiment, the load lock chamber 50, the first film formation processing apparatus 51, the surface treatment apparatus 52, and the second film formation processing apparatus 53 are arranged around the transfer chamber 54 in the order of processing of the substrates S. ing.

  The first film formation processing device 51 and the second film formation processing device 53 correspond to the first film formation processing device 13 and the second film formation processing device 15 of the first embodiment, respectively. Description is omitted.

  The surface treatment apparatus 52 according to this embodiment will be described with reference to FIG. As shown in the drawing, the surface treatment apparatus 52 has a vacuum chamber 62 provided with a vacuum exhaust means 61 such as a pump. In the vacuum chamber 62, a substrate support base 64 having a heating means 65 such as a heater provided on the upper surface is provided. A thin film formed by the first film forming apparatus 51 on the heating means 65. A substrate S having (not shown) is placed. A hydrogen gas introducing means 66 such as a shower plate for introducing hydrogen gas (reactive gas) into the vacuum chamber 62 is provided on the ceiling of the vacuum chamber 62. A catalyst body 70 is provided above the vacuum chamber 62 so as to be in contact with the hydrogen gas introducing means 66 so as to contact the introduced hydrogen gas. The catalyst body 70 is configured to generate radicals between the substrate support 64 (and consequently the substrate S) and the hydrogen gas introduction means 66. The catalyst body 70 can be energized so that the catalyst body 70 is heated.

  In order to supply hydrogen radicals to the substrate S with such a surface treatment apparatus 52, first, the substrate S is placed on the heating means 65 provided on the substrate support 64. Then, the substrate S is heated to a predetermined temperature by the heating means 65. Further, the inside of the vacuum chamber 62 is evacuated to a predetermined degree of vacuum by the evacuation means 61, and the catalyst body 70 is energized to heat the catalyst body 70 to a predetermined temperature. Then, hydrogen gas is introduced into the vacuum chamber 62 from the hydrogen gas introducing means 66, hydrogen radicals are generated by bringing the hydrogen gas into contact with the catalyst body 70, and the hydrogen radicals are supplied to the thin film formed on the substrate S. To do.

  By supplying hydrogen radicals on the substrate S in this way, as in Embodiment 1, irregularities can be provided on the thin film provided on the substrate S, and then formed by the second film forming apparatus 53. The adhesion of the thin film can be improved. Further, as in the first embodiment, the unevenness can be formed on the substrate S without being damaged by ions. As described above, according to the film forming apparatus 1A according to the present embodiment, a thin film with no damage to the substrate S and improved thin film adhesion can be efficiently manufactured using a plurality of film forming apparatuses. Can do.

  In addition, there is no limitation in particular as a structure which conveys the board | substrate S between the 1st film-forming processing apparatus 51, the surface processing apparatus 52, and the 2nd film-forming processing apparatus 53. FIG. It may be a transfer robot as in this embodiment, or a conveyor that transfers the substrate S.

<Embodiment 3>
Even if the film forming apparatus of the present invention is applied to the inter-back type, the same effects as the film forming apparatus according to the first embodiment can be obtained.

  FIG. 7 is a schematic configuration diagram of an interlock type film forming apparatus according to the present embodiment. In addition, the same code | symbol is attached | subjected to the same thing as Embodiment 1, and the overlapping description is abbreviate | omitted.

  The inter-back type film forming apparatus 1B includes a load lock chamber 11, a heating chamber 12, a first film forming apparatus 13, a surface processing apparatus 14, and a second film forming apparatus 15. Are connected in series via the door valve 17 in this order. Each chamber can independently perform a predetermined treatment in a vacuum.

  The transport means for transporting the substrate S of the film forming apparatus 1B is configured as follows. The film forming apparatus 1B is provided with a first transfer path 21 and a second transfer path 22 which are parallel to each other and transfer the substrate S from the load lock chamber 11 to the second film forming processing apparatus 15. The first transport path 21 is provided on the side of the film forming means installation sections 132 and 152. The second transport path 22 has the same configuration as the first transport path 22 of the first embodiment.

  Further, the second film forming apparatus 15 is provided with a path changing means (not shown) that can move the substrate carrier 2 between the first transport path 21 and the second transport path 22. That is, the second film forming apparatus 15 functions not only as a film forming chamber but also as a traverse chamber for traversing the substrate. The path changing means, for example, engages the hook portion of the path changing means with a protrusion provided on the outer frame of the substrate carrier 2, stably supports the substrate carrier 2 in this state, and transports the substrate carrier 2 in the first state. The transport path can be changed by parallel translation between the path 21 and the second transport path 22.

  The substrate S is transported along the first transport path 21 by the film forming apparatus 1B having such a configuration, and each process is performed. That is, the substrate S is carried into the load lock chamber 11, heated to a predetermined temperature in the heating chamber 12, and then a predetermined thin film is formed by the first film forming apparatus 13, and the thin film is formed by the surface processing apparatus 14. Surface treatment is performed, and another thin film is formed on the thin film by the second film forming apparatus 15. Then, after the series of processes is performed, the substrate S is unloaded along the second transfer path 22 and taken out from the film forming apparatus 1B. Thus, since a plurality of films are continuously formed on one substrate, a thin film can be efficiently formed on the substrate.

<Other embodiments>
In the first to third embodiments, the surface treatment is performed on the thin film formed on the substrate. However, the present invention is not limited thereto, and the substrate is first treated by the surface treatment apparatus and then the film formation treatment apparatus. It is good also as a simple structure. That is, the surface treatment may be performed on the substrate to form the unevenness, and the thin film may be formed on the substrate. Even in this case, a thin film with improved adhesion to the substrate can be formed on the substrate.

  In the first to third embodiments described above, two film forming apparatuses and one surface processing apparatus 14 are configured. However, the surface processing apparatus 14 is a substrate before or after the film forming apparatus. If surface treatment can be performed on S, the number and arrangement are not limited. In addition, there is no particular limitation on the type of thin film formed by the first film forming apparatus 13 and the second film forming apparatus 15. When laminating an arbitrary type of thin film, the present invention can be generally applied to the case where surface treatment is performed on one thin film to improve the adhesion.

  Further, in the first and third embodiments, the vertical in-line type film forming apparatus 1 and the inter-back type film forming apparatus 1B in which the substrate S is arranged vertically have been described. However, the horizontal type in which the substrate S is arranged horizontally is described. Even the in-line type film forming apparatus and the inter-back type film forming apparatus have the same effects.

1, 1A, 1B Film forming apparatus 13, 51 First film forming apparatus 14, 52 Surface treatment apparatus 15, 53 Second film forming apparatus 30 Reactive gas supply unit 40 Catalyst body 50 Load lock chamber 54 Transfer chamber 62 Vacuum chamber 66 Hydrogen gas introduction means 70 Catalyst body 141 Reaction chamber 142 Sealing door 143 Surface treatment space 146 Antireflection structure

Claims (6)

A film forming apparatus for forming a thin film on a substrate;
A surface treatment device for bringing the reaction gas supplied into the reaction chamber into contact with the catalyst body to generate radicals, supplying the radicals to the substrate and performing surface treatment of the substrate;
The surface treatment apparatus is installed so as to perform surface treatment of the substrate before or after the film formation treatment apparatus,
The surface treatment apparatus includes:
Sealing an opening provided on one surface of the surface treatment apparatus, and a removable door;
Gas introduction means for introducing a reaction gas into the reaction chamber;
A catalyst body provided on the door and disposed opposite to a substrate installed in the reaction chamber and heated by energization;
The catalyst body is formed in a straight line, and both ends are fixed to the upper and lower parts of the door,
A film forming apparatus, wherein the reaction gas is brought into contact with the heated catalyst body to generate radicals, and surface treatment of the substrate is performed by supplying the radicals to the substrate. In the film-forming apparatus of Claim 1,
The gas introduction means includes a reactive gas supply unit that uniformly supplies radicals generated from the reaction gas to the surface of the substrate disposed in the reaction chamber ,
The film forming apparatus, wherein the reactive gas supply unit includes a distribution pipe that is disposed opposite to an outer edge portion of the substrate and a central portion of the substrate and injects a reactive gas . In the film-forming apparatus of Claim 1 or Claim 2,
The surface treatment apparatus generates hydrogen radicals or halogen radicals by bringing the reaction gas containing hydrogen or halogen into contact with the catalyst body, and supplies the hydrogen radicals or halogen radicals to the substrate. A film forming apparatus characterized by performing a roughening process . In the film-forming apparatus as described in any one of Claims 1-3 ,
An inner surface constituting a part of the reaction chamber of the door is provided with an antireflection structure for preventing reflection of radiation emitted from the catalyst body,
The film forming apparatus, wherein the catalyst body is disposed closer to the substrate than the antireflection structure provided on the inner surface of the door. In the film-forming apparatus as described in any one of Claims 1-4 ,
A film forming apparatus, wherein the surface processing apparatus and the film forming apparatus are connected, and surface processing and film forming processing are continuously performed on a substrate. In the film-forming apparatus as described in any one of Claims 1-4 ,
A film forming apparatus characterized in that the surface processing apparatus and the film forming processing apparatus are connected via a transfer means to perform surface processing and film forming processing on a substrate.

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