WO2020144992A1 - Structure, procédé de fabrication de structure et dispositif électronique - Google Patents

Structure, procédé de fabrication de structure et dispositif électronique Download PDF

Info

Publication number
WO2020144992A1
WO2020144992A1 PCT/JP2019/047879 JP2019047879W WO2020144992A1 WO 2020144992 A1 WO2020144992 A1 WO 2020144992A1 JP 2019047879 W JP2019047879 W JP 2019047879W WO 2020144992 A1 WO2020144992 A1 WO 2020144992A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
buffer layer
base
metal
metal film
Prior art date
Application number
PCT/JP2019/047879
Other languages
English (en)
Japanese (ja)
Inventor
高橋　祐一
昇平 阿部
元 米澤
島津　武仁
幸 魚本
Original Assignee
ソニー株式会社
国立大学法人東北大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社, 国立大学法人東北大学 filed Critical ソニー株式会社
Priority to US17/413,658 priority Critical patent/US12023892B2/en
Priority to JP2020565631A priority patent/JP7371871B2/ja
Priority to DE112019006574.2T priority patent/DE112019006574T5/de
Publication of WO2020144992A1 publication Critical patent/WO2020144992A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/04—Joining glass to metal by means of an interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/141—Light emitting diodes [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/176—Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the present disclosure relates to, for example, a structure bonded using atomic diffusion bonding, a method for manufacturing the structure, and an electronic device including the structure.
  • the contact area at the bonding interface is increased to increase the bonding force.
  • a joint surface having a small surface roughness that is, a joint surface having a small arithmetic average roughness (Ra) is required.
  • Ra a joint surface having a small arithmetic average roughness
  • a structure according to an embodiment of the present disclosure has a first substrate having one surface and a density lower than a density determined from a crystal structure and a composition of constituent materials, and one surface of the first substrate. It is provided with a second base member arranged to face each other, and a buffer layer provided between the first base member and the second base member and containing at least a metal element.
  • a method for manufacturing a structure according to an embodiment of the present disclosure includes a first substrate having one surface and a density lower than a density determined from a crystal structure and a composition of constituent materials, and a second substrate. By joining, a buffer layer containing at least a metal element is formed between the first base and the second base.
  • An electronic device includes the structure according to the embodiment of the present disclosure.
  • the structure has one face, and the density determined by the crystal structure and the composition of the constituent materials is higher than the density.
  • a buffer layer containing at least a metal element having excellent polishing processability was provided between the first substrate having a low density and the second substrate arranged to face the one surface. As a result, a joint surface having a small arithmetic average roughness (Ra) is formed on one surface of the first substrate.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a method of manufacturing the structure shown in FIG. 1. It is a cross-sectional schematic diagram showing the process of following FIG. 2A. It is a cross-sectional schematic diagram showing the process of following FIG. 2B. It is a cross-sectional schematic diagram showing the process of following FIG. 2C. It is a cross-sectional schematic diagram showing the process of following FIG. 2D. It is a cross-sectional schematic diagram of the porous substrate by which the surface was polished. It is a cross-sectional schematic diagram of the structure using the porous base
  • FIG. 7 is a schematic sectional view illustrating an example of a method of manufacturing the structure shown in FIG. 6. It is a cross-sectional schematic diagram showing the process of following FIG. 7A.
  • FIG. 8 is a schematic cross-sectional view showing a configuration of a structure according to Modification Example 1 of the present disclosure.
  • FIG. 9 is a schematic cross-sectional view showing an example of a method for manufacturing the structure shown in FIG. 8. It is a cross-sectional schematic diagram showing the process of following FIG.
  • FIG. 9A It is a cross-sectional schematic diagram showing the process of following FIG. 9B.
  • FIG. 9C is a schematic sectional view showing a step following FIG. 9C.
  • FIG. 9D is a schematic sectional view illustrating a step following FIG. 9D.
  • FIG. 10 is a schematic cross-sectional view showing a configuration of a structure according to Modification 2 of the present disclosure.
  • FIG. 3 is a schematic cross-sectional view illustrating an example of a phosphor wheel according to a first embodiment of the present disclosure.
  • FIG. 11B is a schematic plan view of the phosphor wheel shown in FIG. 11A.
  • FIG. 11C is a schematic sectional view illustrating an example of a method for manufacturing the phosphor wheel illustrated in FIG. 11A.
  • FIG. 12A It is a cross-sectional schematic diagram showing the process of following FIG. 12A. It is a cross-sectional schematic diagram showing the process of following FIG. 12B. It is a cross-sectional schematic diagram showing the process of following FIG. 12C. It is a cross-sectional schematic diagram showing the process of following FIG. 12D.
  • FIG. 12C is a schematic sectional view showing a step following FIG. 12E.
  • FIG. 7 is a schematic cross-sectional view illustrating another example of the phosphor wheel according to the first embodiment of the present disclosure. It is a cross-sectional schematic diagram showing an example of a structure of the fluorescent substance wheel shown in FIG. FIG.
  • FIG. 7 is a schematic cross-sectional view illustrating an example of the configuration of a light emitting device according to a second embodiment of the present disclosure.
  • FIG. 15B is a schematic plan view of the light emitting device shown in FIG. 15A.
  • FIG. 8 is a schematic sectional view illustrating another example of the light emitting device according to the second embodiment of the present disclosure.
  • FIG. 16B is a schematic plan view of the light emitting device shown in FIG. 16A.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a configuration of a laser amplifier according to a third embodiment of the present disclosure.
  • FIG. 8 is a schematic cross-sectional view illustrating an example of the configuration of a pulse laser device according to a fourth embodiment of the present disclosure. It is a figure.
  • FIG. 1 schematically illustrates a cross-sectional configuration of a structure (structure 1) according to the first embodiment of the present disclosure.
  • This structure 1 has a laminated structure in which two or more members to be bonded are bonded by, for example, atomic diffusion bonding, and constitutes, for example, a wavelength conversion element used in a projector or the like (see, for example, FIG. 11A).
  • the structure 1 of the present embodiment includes a porous substrate 11 (first substrate) having a density lower than the density determined from the crystal structure and composition of the constituent materials, and one surface of the porous substrate 11 facing the porous substrate 11.
  • the substrate 21 (second substrate) to be arranged is joined by, for example, atomic diffusion bonding in the buffer layer 31 containing at least a metal element.
  • the porous substrate 11 has a density lower than the density determined from the crystal structure and composition of the material forming the porous substrate 11, and for example, has a plurality of voids G in the layer. It has a lower density than a continuous crystal.
  • the porous substrate 11 is a substrate having a region having a large arithmetic average roughness (Ra) that represents the surface roughness, and it is difficult to reduce the arithmetic average roughness (Ra) by polishing. It is a thing.
  • the porous substrate 11 of the present embodiment has, for example, an arithmetic mean roughness (Ra) of 2 nm or more and a plurality of voids G of 0.5 ⁇ m or more and 3 ⁇ m or less.
  • the porous substrate 11 may be a sintered body such as ceramics.
  • the base 21 has, for example, a flat surface as a bonding surface, and is made of, for example, an inorganic material or a plastic material.
  • the inorganic material include crystalline solids of inorganic oxides such as silicon oxide (SiO x ), aluminum oxide (AlO x ), and YAG (yttrium-aluminum garnet), or glassy solids (amorphous solids).
  • the glassy solid made of the above material includes spin-on-glass (SOG) and the like.
  • semiconductors such as silicon (Si) and germanium (Ge), silicon nitride (SiN x ), silicon carbide (SiC), diamond, and the like can be given.
  • the plastic material include polycarbonate (PC), polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN), polyethyl ether ketone (PEEK), and the like.
  • the porous substrate 11 and the substrate 21 may or may not have a light-transmitting property.
  • Examples of the light-transmissive substrate 21 include glass and quartz substrates.
  • the buffer layer 31 is a joining portion that joins the porous substrate 11 and the substrate 21.
  • the buffer layer 31 is composed of a base layer 31A formed in a manufacturing process of the structure 1 described later and metal films 32 and 33.
  • the metal film 32 is provided on the porous substrate 11 via the underlayer 31A.
  • the metal film 33 is provided directly on the base 21, for example.
  • the metal element derived from the metal films 32 and 33 is locally distributed in the film thickness direction.
  • the buffer layer 31 includes, for example, an inorganic material (inorganic oxide) derived from the base layer 31A and combined with oxygen, for example.
  • an inorganic material inorganic oxide
  • titanium lanthanum oxide (TiLaO x ) hafnium oxide (HfO x ), and the like.
  • the buffer layer 31 further includes, for example, aluminum (Al), titanium (Ti), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni) derived from the metal films 32 and 33. ), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd). ), silver (Ag), platinum (Pt), gold (Au), indium (In), tin (Sn), hafnium (Hf), tungsten (W) and tantalum (Ta).
  • the buffer layer 31 may include an inorganic nitride such as silicon nitride (SiN), an inorganic oxynitride such as silicon oxynitride (SiON), and an inorganic fluoride such as silicon fluoride (SiF x ). Good.
  • the thickness of the buffer layer 31 in the Y-axis direction (hereinafter, simply referred to as thickness) is preferably, for example, 10 nm or more and 10 ⁇ m or less.
  • the inorganic oxide forming the buffer layer 31 may be a glassy solid (amorphous solid) or a crystalline solid.
  • the metal element derived from the metal films 32 and 33 is locally distributed in the buffer layer 31 in the film thickness direction, the metal element has kinetic energy and thermal energy when forming the buffer layer 31 and after bonding. By the heat treatment of 1) and the like, they are mutually diffused at the interface between the base layer 31A and the base 21.
  • the distribution of the metal element in the buffer layer 31 is determined by, for example, energy dispersive X-ray analysis (EDX), electron energy loss spectroscopy (Electron Energy Loss Spectroscopy: EELS), and secondary ion mass spectrometry.
  • the metal element is a layer of the buffer layer 31. It is possible to confirm the concentration distribution of the metal element that continuously decreases in a predetermined range from the inside toward the interface between the porous substrate 11 and the substrate 21.
  • Such a structure 1 can be manufactured as follows, for example.
  • a porous substrate 11 having a large arithmetic average roughness (Ra) is prepared.
  • an ion assisted deposition method Ion Assisted Deposition: IAD
  • IAD ion Assisted Deposition
  • the base layer 31A may be formed using a vacuum vapor deposition method, a sputtering method, an ion plating method, a chemical vapor deposition method (Chemical Vapor Deposition: CVD), or the like, in addition to the IAD.
  • a vacuum vapor deposition method a sputtering method, an ion plating method, a chemical vapor deposition method (Chemical Vapor Deposition: CVD), or the like, in addition to the IAD.
  • CVD Chemical Vapor Deposition
  • the base layer 31A is configured to include the inorganic oxide that constitutes the buffer layer 31. It is preferable to use a material having good polishing processability for the underlayer 31A.
  • the underlayer 31A is made of, for example, silicon oxide (SiO x ), aluminum oxide (AlO x ), or niobium oxide (NbO x ).
  • TiO x titanium oxide
  • Ta 2 O 5 tantalum oxide
  • AlLaO x aluminum lanthanum oxide
  • TiLaO x titanium lanthanum oxide
  • TiLaO x titanium lanthanum oxide
  • HfO x hafnium oxide
  • the thickness of the base layer 31A is preferably, for example, 10 nm or more and 10 ⁇ m or less, but not limited to this.
  • polishing is performed by a physical or chemical action to reduce the arithmetic average roughness (Ra) of the underlayer 31A.
  • the surface of the base layer 31A preferably has smoothness, and for example, preferably has an arithmetic average roughness (Ra) of 0.5 nm or less. Thereby, it becomes a preferable bonding surface in the atomic diffusion bonding method.
  • the required arithmetic average roughness (Ra) of the joint surface varies depending on, for example, the thickness of the metal films 32 and 33 used for joining.
  • the arithmetic mean roughness ( Ra) is as follows. For example, when the thickness of the bonding metal layer (Ti film) provided on the base on one side is 50 nm or less, if the arithmetic average roughness (Ra) of the bonding surface is 1 nm or less, bonding can be performed without pressure. , 0.3 nm or less is more preferable.
  • the thickness of the bonding metal layer (Ti film) provided on the base on one side is thicker than 20 nm, if the arithmetic mean roughness (Ra) of the bonding surface is 1.0 nm or less, the pressure is applied at 10 MPa or more. Can be joined.
  • the relationship between the thickness of the joining metal layer required for joining and the arithmetic mean roughness (Ra) of the joining surface depends on the crystal structure and the self-diffusion coefficient of the joining metal layer.
  • Dependent For example, when aluminum (Al), gold (Au), or the like having a face-centered cubic lattice and a large self-diffusion coefficient is used for the bonding metal layer, an atomic rearrangement phenomenon easily occurs at the bonding interface, Even if the arithmetic mean roughness (Ra) is large, it is possible to bond.
  • the base layer 31A may be formed using a film forming process having a self-smoothing effect. In that case, the above-mentioned polishing process becomes unnecessary. Further, for the base layer 31A, in addition to the above-mentioned materials having good polishing workability, a method of securing a bonding area by deviating by forming a resin that is easily deformable on the substrate is also effective. .. It is more effective to use a resin having high wettability in which the surface roughness of the resin surface is reduced by the surface tension.
  • a metal film 32 having, for example, a microcrystalline structure is formed on the base layer 31A, and a base 21 having a metal film 33 formed on the surface thereof is prepared by the same method.
  • the arithmetic mean roughness (Ra) required for the substrate 21 and the thickness of the metal film 33 are the same as the arithmetic mean roughness (Ra) required for the underlayer 31A and the thickness of the metal film 32.
  • the porous substrate 11 and the substrate 21 are arranged to face each other so that the metal film 32 on the porous substrate 11 and the metal film 33 on the substrate 21 face each other.
  • the metal films 32 and 33 have a microcrystalline structure, and include, for example, aluminum (Al), titanium (Ti), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel ( Ni), gold (Au), platinum (Pt), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium ( Ru), rhodium (Rh), palladium (Pd), silver (Ag), indium (In), tin (Sn), hafnium (Hf) and tantalum (Ta), tungsten (W), stainless steel and the like. ing.
  • the metal film 32 and the metal film 33 are superposed by the atomic diffusion bonding method to bond the porous substrate 11 and the substrate 21 together. At this time, if the surfaces of the base layer 31A and the base body 21 are smooth, the metal films 32 and 33 can be joined even with extremely thin films of 0.2 nm each.
  • the metal films 32 and 33 are formed by using, for example, the following method.
  • a physical vapor deposition method Physical Vapor Deposition: PVD
  • PVD Physical Vapor Deposition
  • a Ti film for example, having a thickness of 0.2 nm or more and 200 nm or less is formed by using a CVD method or various vapor deposition methods.
  • a vacuum film forming method in which film formation is performed under the generation of plasma capable of increasing the internal stress of the formed metal films 32 and 33, or sputtering. It is preferable to form a film using the method.
  • the pressure in the vacuum container at the time of forming the metal films 32 and 33 may be a vacuum atmosphere having an ultimate vacuum of 1 ⁇ 10 ⁇ 4 to 1 ⁇ 10 ⁇ 8 Pa, but at a low pressure (high vacuum). The more preferable it is. This makes it possible to use a material that is easily oxidized, such as Al.
  • the pressure of the inert gas (generally, argon (Ar) gas) at the time of forming the film is in a dischargeable region (for example, 0.01 Pa or more).
  • a dischargeable region for example, 0.01 Pa or more.
  • the upper limit is preferably set to 30 Pa (300 ⁇ bar) or less because there is a possibility that bonding exceeding 30 Pa (300 ⁇ bar) cannot be performed. This is because the arithmetic mean roughness (Ra) of the formed metal film 32 increases as the Ar gas pressure increases.
  • the metal films 32 and 33 may be formed using a film forming process having a self-smoothing function. In this case, since the surfaces of the metal films 32 and 33 are smooth, it becomes possible to bond even if the arithmetic average roughness (Ra) of the bonding surface is large.
  • the metal film 32 and the metal film 33 are overlapped by using the atomic diffusion bonding method, and, for example, pressure (P) is applied from the side of the base 21 to form the porous base 11 and the base. 21 is joined.
  • P pressure
  • the joining of the metal films 32 and 33 may be performed using a method other than the atomic diffusion joining method described above. For example, when a metal film is previously formed on the surface of one or both of the two substrates that are arranged to face each other, an oxide on the surface of the metal film which is previously formed by, for example, plasma etching in the vacuum container, By removing the organic substance and activating the surface, it becomes possible to bond it to the other metal film.
  • inorganic bonding such as atomic diffusion bonding.
  • a bonding surface having a small arithmetic average roughness (Ra) is required in order to increase the contact area at the bonding interface and secure the bonding force.
  • Ra a glassy homogeneous material
  • polishing there are many practical examples of atomic diffusion bonding, optical contact and the like.
  • the buffer layer 31 containing at least a metal element is provided between the porous substrate 11 and the substrate 21 having a large arithmetic average roughness (Ra).
  • the buffer layer 31 is derived from the base layer 31A provided on the porous substrate 11 in the step of joining with the substrate 21.
  • the base layer 31A is made of glass, for example, and a smooth surface having a small arithmetic average roughness (Ra) can be formed by polishing.
  • the porous substrate 11 since the base layer 31A containing an inorganic oxide having excellent polishing workability is provided on the porous substrate 11 having a large arithmetic average roughness (Ra), the porous substrate 11 is provided with It is possible to secure the smoothness, and it is possible to perform bonding using atomic diffusion bonding, for example.
  • the inorganic base layer 31A having excellent polishing workability is provided on the porous substrate 11 having a large arithmetic average roughness (Ra), and the arithmetic operation is performed by polishing the underlying layer 31A.
  • a bonding surface having a small (Ra) is formed.
  • FIG. 5 schematically illustrates an example of a cross-sectional configuration of a structure (structure 2) according to the second embodiment of the present disclosure
  • FIG. 6 is a second embodiment of the present disclosure
  • 3 schematically shows another example of the cross-sectional structure of the structure (structure 3) according to the present invention. Similar to the first embodiment, these structures 2 and 3 have a laminated structure in which two or more members to be bonded are bonded by, for example, atomic diffusion bonding.
  • a laser amplifier for example, See FIG. 16).
  • the substrate 21 having a flat bonding surface made of an inorganic material, a plastic material, or the like is used as a member to be bonded to the porous substrate 11 .
  • the member to be joined is not limited to this.
  • a substrate (porous substrate 41) having a large arithmetic average roughness (Ra) like the structure 2 shown in FIG. 5 can be used as a member to be joined to the porous substrate 11.
  • the porous substrate 11 and the porous substrate 41 having a large arithmetic average roughness (Ra) are bonded with the buffer layer 31 in between, as in the structure 1 in the first embodiment. It is a thing.
  • the porous substrate 41 has a density lower than the density determined from the crystal structure and composition of the constituent materials, and for example, has a plurality of voids G in the layer. The density is lower than that of the crystal.
  • the porous substrate 41 has, for example, an arithmetic average roughness (Ra) of 2 nm or more and a plurality of voids G of 0.5 ⁇ m or more and 50 ⁇ m or less.
  • the porous substrate 41 may be a sintered body such as ceramics.
  • the buffer layer 31 preferably has a thickness of, for example, 10 nm or more and 10 ⁇ m or less.
  • an underlayer is formed on the porous substrate 41, and the surface thereof is polished to, for example, 0.
  • a surface having a small arithmetic average roughness (Ra) of 5 nm or less is formed.
  • a metal film having a microcrystalline structure is formed on this underlayer, similar to the metal film 32 formed on the underlayer 31A in the first embodiment.
  • the porous substrate 11 and the porous substrate 41 are arranged so as to face each other so that the metal film and the metal film 32 provided on the porous substrate 11 face each other.
  • pressure (P) is applied from the porous substrate 41 side.
  • it joins By the above, the structure 2 shown in FIG. 5 is completed.
  • a metal substrate (metal substrate 51) having a large arithmetic average roughness (Ra), such as the structure 3 shown in FIG. 6, can be used as the member to be joined to the porous substrate 11.
  • the structure 3 is formed by joining a porous substrate 11 and a metal substrate 51 having a large arithmetic mean roughness (Ra) to each other with a buffer layer 61 in between.
  • the metal substrate 51 is used as the member to be joined, as described above, by applying a predetermined pressure during joining, elastic deformation and plastic deformation can be induced in the joined substrate.
  • the arithmetic average roughness (Ra) may be 3 nm or less, for example.
  • the metal material forming the metal base 51 examples include stainless steel, aluminum (Al), iron (Fe), copper (Cu), magnesium (Mg), zinc (Zn), and the like.
  • the thickness of the metal film 32 is preferably 10 nm or more and 200 nm or less, for example.
  • the porous substrate 11 having the underlayer 31A and the metal film 32 formed thereon is prepared.
  • a metal film 63 is formed on the surface of the metal base 51 having a large arithmetic average roughness (Ra), and is porous so that the metal film 32 and the metal film 63 face each other as shown in FIG. 7A.
  • the base 11 and the metal base 51 are arranged to face each other.
  • the metal film 63 has a microcrystalline structure, and is configured to include the above metal material or semi-metal material.
  • the thickness of the metal film 63 is preferably such that the bonding area is sufficient with the deformation of the metal film 32, the metal film 63, and the metal substrate 51 due to the pressure applied, and is, for example, 10 nm or more and 200 nm or less. preferable.
  • the metal film 63 can be formed by using the same method as the metal film 32.
  • a vacuum container having a high degree of ultimate vacuum of 1 ⁇ 10 ⁇ 4 to 1 ⁇ 10 ⁇ 8 Pa for example, a sputtering method, a PVD method such as ion plating, a CVD method or various vapor deposition methods is used.
  • a Ti film having a thickness of 0.2 nm or more and 200 nm or less is formed.
  • the pressure in the vacuum container at the time of forming the metal film 63 may be a vacuum atmosphere having an ultimate vacuum of 1 ⁇ 10 ⁇ 4 to 1 ⁇ 10 ⁇ 8 Pa, but a lower pressure (higher vacuum) preferable. This makes it possible to use a material that is easily oxidized, such as Al.
  • the pressure of the inert gas (generally, argon (Ar) gas) at the time of forming the film is in a dischargeable region (for example, 0.1 Pa or more).
  • a dischargeable region for example, 0.1 Pa or more.
  • the upper limit is preferably set to 30 Pa (300 ⁇ bar) or less because there is a possibility that bonding exceeding 30 Pa (300 ⁇ bar) cannot be performed. This is because the arithmetic mean roughness (Ra) of the formed metal film 63 increases as the Ar gas pressure increases.
  • the metal film 63 may be formed using a film forming process having a self-smoothing effect. In that case, since the surface of the metal film 63 becomes smooth, it becomes possible to bond even if the arithmetic average roughness (Ra) of the bonding surface is large.
  • the metal film 32 and the metal film 63 are overlapped by using the atomic diffusion bonding method, and pressure (P) is applied from the metal base 51 side, for example.
  • P pressure
  • the metal base 51 and the metal film 63 are deformed, and the contact area with the facing metal film 32 increases.
  • the structure 3 shown in FIG. 6 is completed.
  • the base layer (for example, the base layer 31A) is provided on each of the porous substrates 11 and 41 having a large arithmetic average roughness (Ra), and the surface thereof is polished to After forming a surface having a small arithmetic average roughness (Ra) of 0.5 nm or less, a metal film (for example, the metal film 32) is formed on each of the underlayers and bonded.
  • a metal substrate metal substrate 51
  • the above-mentioned structure is provided on the surface to be joined to the porous substrate 11.
  • a metal film 63 similar to the metal film 32 provided on the underlayer 31A is provided and joined to the metal film 32 provided on the porous substrate 11 side. This makes it possible to form a structure having excellent bonding strength without limiting the members to be bonded to the porous substrate 11.
  • FIG. 8 schematically illustrates an example of a cross-sectional configuration of the structure (structure 4) according to the first modification of the present disclosure. Similar to the first embodiment, the structure 4 has a laminated structure in which two or more members to be bonded are bonded by, for example, atomic diffusion bonding, and for example, wavelength conversion used in a projector or the like. In addition to the element (see, for example, FIG. 9A), a laser amplifier, a prism, and other optical members having optical transparency are configured.
  • a porous substrate 11 having a large arithmetic average roughness (Ra) and a substrate 21 having a flat surface as a bonding surface is used is described as an example. To do.
  • the buffer layer 71 is a joining portion that joins the porous substrate 11 and the substrate 21. Similar to the first embodiment and the like, the buffer layer 71 is composed of a base layer 71A formed in the manufacturing process and metal films 72 and 73. In the present modification, the buffer layer 71 has a further optical transparency. Has become.
  • the buffer layer 71 includes, for example, an inorganic material (inorganic oxide) derived from the base layer 71A and bound to oxygen, for example.
  • an inorganic material inorganic oxide
  • silicon oxide (SiO x ) aluminum oxide (AlO x ), niobium oxide (NbO x ), titanium oxide (TiO x ), tantalum oxide (Ta 2 O 5 ), aluminum lanthanum oxide (AlLaO x ).
  • titanium lanthanum oxide (TiLaO x ) hafnium oxide (HfO x ), and the like.
  • the buffer layer 71 further includes, for example, aluminum (Al), titanium (Ti), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni) derived from the metal films 72 and 73. ), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd). ), silver (Ag), indium (In), tin (Sn), hafnium (Hf) and tantalum (Ta).
  • the buffer layer 71 may include an inorganic nitride such as silicon nitride (SiN), an inorganic oxynitride such as silicon oxynitride (SiON), and an inorganic fluoride such as silicon fluoride (SiF x ). Good.
  • the buffer layer 71 preferably has a thickness of, for example, 10 nm or more and 10 ⁇ m or less.
  • the inorganic oxide forming the buffer layer 71 may be a crystalline solid or a glassy solid (non-crystalline solid).
  • the buffer layer 71 has metal elements locally distributed in the film thickness direction. This metal element is derived from the metal films 72 and 73. The metal element forming the metal films 72 and 73 will be described in detail later, but in the annealing treatment after the bonding between the metal film 72 and the metal film 73, oxygen forming the base layer (base layer 71A in this modification) is used. The atoms diffuse toward the metal film 72 in contact with the base layer 71A.
  • the distribution of the metal element in the buffer layer 71 is measured by, for example, EDX, EELS, SIMS, and TOF-SIMS analysis due to the diffusion of the oxygen atoms and the disorder of the bonding interface, the oxygen atoms from the underlying layer 71A are By diffusion, it is possible to confirm the concentration distribution of the metal element that continuously decreases in a predetermined range from the interface with the substrate 21 toward the interface with the porous substrate 11. Further, for example, when the underlayer is provided on both the porous substrate 11 and the porous substrate 41 as in the structure 2 of the second embodiment, the metal element is added from within the buffer layer 71.
  • the concentration distribution of the metal element that continuously decreases in the predetermined range toward the interface between the porous substrate 11 and the substrate 21 is confirmed.
  • the stability of the chemical bond between the oxygen atoms forming the underlayer (the underlayer 71A in this modification) and the metal element of the metal films 72 and 73 is high, or when the surface roughness Ra of the buffer layer is small.
  • the continuous decrease of the metal element becomes steep and may be observed as a rectangular concentration distribution within a predetermined range.
  • the porous substrate 11 is prepared.
  • a base layer 71A is formed on the bonding surface of the porous substrate 11 by polishing and the surface of the porous substrate 11 is roughened.
  • the thickness is, for example, 10 nm or more and 10 ⁇ m or less.
  • the base layer 71A may be formed by using the IAD method, the sputtering method, the ion plating method, the CVD method, or the like, in addition to the vacuum vapor deposition method.
  • the base layer 71A is preferably an inorganic material (inorganic oxide) that is chemically bonded to oxygen, and a material having good polishing processability is used. Further, a material capable of encapsulating oxygen by physical adsorption in voids formed in the layer by grain boundaries or the like may be used. It is preferable that any of the materials has a lower oxygen binding force than the metal material used for the metal films 72 and 73.
  • an inorganic oxide such as silicon oxide (SiO x ), aluminum (Al), titanium (Ti), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni).
  • the thickness of the base layer 71A is preferably, for example, 10 nm or more and 10 ⁇ m or less as described above, but is not limited thereto.
  • the oxygen binding force is defined as follows.
  • the oxygen bonding force of the metal material forming the metal films 72 and 73 is the chemical bonding force between titanium atoms and oxygen atoms. ..
  • silicon oxide (SiO 2 ) is used as the oxygen supply material
  • the oxygen bond strength of the oxygen supply material is the chemical bond strength between silicon atoms and oxygen atoms and the non-covalent bond strength with silicon oxide (SiO 2 ).
  • the non-covalent bond includes oxygen trapped through water and oxygen trapped in the film.
  • polishing is performed by, for example, physical or chemical action to reduce the arithmetic average roughness (Ra) of the base layer 71A.
  • the surface of the base layer 71A preferably has smoothness, and has, for example, an arithmetic average roughness (Ra) of 0.5 nm or less.
  • the base layer 71A may be formed by using a film forming process having a self-smoothing function. In that case, the above-mentioned polishing process becomes unnecessary. Further, for the base layer 71A, in addition to the above-mentioned materials having good polishing workability, a method of securing a bonding area by deviating by forming a resin that is easily deformable on the substrate is also effective. .. It is more effective to use a resin having high wettability in which the surface roughness of the resin surface is reduced by the surface tension.
  • a metal film 72 having, for example, a microcrystalline structure is formed on the base layer 71A, and a substrate 21 having a metal film 73 formed on the surface by the same method is prepared.
  • the porous substrate 11 and the substrate 21 are arranged to face each other so that the metal film 72 on the porous substrate 11 and the metal film 73 on the substrate 21 face each other.
  • the metal films 72 and 73 have a microcrystalline structure, and are made of, for example, aluminum (Al), titanium (Ti), zirconium (Zr), niobium (Nb), hafnium (Hf), tantalum (Ta), or the like. It is configured to include a metal that becomes transparent by doing.
  • the porous substrate 11 and the substrate 21 are joined by superposing the metal film 32 and the metal film 33 by using the atomic diffusion bonding method. At this time, if the surfaces of the base layer 31A and the base body 21 are smooth, the metal films 72 and 73 can be joined even with extremely thin films each having a thickness of 0.2 nm, for example.
  • the metal film 72 and the metal film 73 are overlapped by using the atomic diffusion bonding method, and, for example, pressure (P) is applied from the base 21 side to form the porous base 11 and the base. 21 is joined.
  • P pressure
  • the bonded porous substrate 11 and substrate 21 are left as an annealing treatment in an environment of 100° C. or higher and 800° C. or lower, for example.
  • the buffer layer 71 in which the metal element is locally distributed in the film thickness direction is formed between the porous substrate 11 and the substrate 21.
  • the joining of the metal films 72 and 73 may be performed using a method other than the atomic diffusion joining method described above. For example, when a metal film is previously formed on the surface of one or both of the two substrates that are arranged to face each other, an oxide on the surface of the metal film which is previously formed by, for example, plasma etching in the vacuum container, By removing the organic substance and activating the surface, it becomes possible to bond it to the other metal film.
  • the thickness of the metal film 72 is preferably such that the metal material forming the metal film 72 is sufficiently oxidized by the oxygen generated from the base layer 71A, and is sufficiently thinner than the base layer 71A. desirable.
  • the bonding strength increases as the oxidation of the metal films 72 and 73 progresses.
  • the thicknesses of the metal films 72 and 73 vary depending on whether the buffer layer 71 has a light-transmitting property. For example, in the present modified example in which the buffer layer 71 has a light-transmitting property, the thickness is preferably 0.2 nm or more and 10 nm or less.
  • the annealing treatment may be performed under the same conditions as the formation of the metal films 72 and 73 and the joining of the metal films 72 and 73, or may be performed outside the apparatus, for example, in the atmosphere.
  • the lower limit temperature of the annealing treatment 100° C.
  • the upper limit temperature of 800° C. is the softening point of the optical glass used for the porous substrate 11, the substrate 21 and the base layer 71A when the structure 1 is used as an optical element, the melting point of the metal, and the fracture temperature due to the thermal stress of the thin film. It is based on. Therefore, the temperature of the annealing treatment is not limited to the above range.
  • the temperature is 100° C. or lower.
  • Treatment is preferred.
  • the annealing treatment is preferably performed in an environment of, for example, 300° C. or lower, and more preferably, for example, 100. It is below °C.
  • the metal films 72 and 73 can be oxidized by leaving them at room temperature. Further, by lowering the density of the base layer 71A and increasing the voids in the layer, more water is physically adsorbed. As a result, the amount of oxygen supplied from the oxygen supply layer increases, and the oxidation of the metal films 72 and 73 at room temperature is promoted.
  • laser or electromagnetic wave heating may be used as the process of promoting the oxidation of the metal films 72 and 73, and the heating may be localized.
  • a material having a low oxygen binding force is used as the material of the base layer 71A, and further, the annealing treatment is performed after the metal film 72 and the metal film 73 are bonded. As a result, the metal elements forming the metal film 72 and the metal film 73 are oxidized, and the buffer layer 71 becomes light transmissive.
  • FIG. 10 schematically illustrates a cross-sectional configuration of a structure (structure 5) according to Modification 2 of the present disclosure.
  • This structure 5 has a laminated structure in which two or more members to be bonded are bonded by, for example, atomic diffusion bonding, and constitutes, for example, a cemented lens for correcting chromatic aberration, a polarization separation prism used in a projector.
  • the structure 5 of the present modification is formed by joining the refractory glass substrate 81 and the substrate 21 with the buffer layer 31 containing at least a metal element in between, for example, by atomic diffusion bonding.
  • the hard glass substrate 81 has a density lower than the density determined from the crystal structure and composition of the material forming the hard glass substrate 81, and is, for example, a hard glass material having an abrasion degree of 300 or more.
  • the refractory glass substrate 81 is made of phosphoric acid-based, fluorophosphoric acid-based (eg, fluorophosphate glass composed of phosphoric acid (P 2 O 5 ) and fluoride (eg, AlF 3 or CaF 2 )) or oxidized
  • a glass material containing lead as a main component can be used.
  • the refractory glass substrate 81 and the substrate 21 can be joined by using, for example, a method similar to that of the first embodiment.
  • Ra arithmetic mean roughness
  • polishing it is easy to cause a chemical reaction with moisture in the air, cleaning liquid, and abrasives, and the surface is left unattended.
  • the surface is rough, or the surface is rough due to cleaning. Therefore, it is difficult to keep the surface roughness low, and at the time of joining, the surface is likely to be in a rough state as shown in FIG. 10, for example.
  • the refractory glass substrate 81 and the substrate 21 are bonded via the buffer layer 31 containing at least a metal element.
  • a base material such as the difficult-to-be-glass substrate 81 whose surface roughness is difficult to be kept low can be bonded using, for example, atomic diffusion bonding.
  • Example 1 schematically shows an example of a cross-sectional configuration of the phosphor wheel (phosphor wheel 100A), and FIG. 11B schematically shows an example of a planar configuration of the phosphor wheel 100A shown in FIG. 11A. It is a representation. Note that FIG. 11A shows a cross section taken along the line II shown in FIG. 11B.
  • the phosphor wheel 100A is used as, for example, a transmissive wavelength conversion element in a light source section of a projector.
  • the phosphor wheel 100A has, for example, a structure in which a dichroic film 112, a buffer layer 131, an interface antireflection film 122, and a phosphor layer 121 are laminated in this order on a rotatable wheel substrate 111. Antireflection films 113 and 123 are provided on the back surface of 111 and on the phosphor layer 121, respectively.
  • the wheel substrate 111 is, for example, a sapphire substrate and corresponds to the base body 21 in the above-described embodiment.
  • the phosphor layer 121 has, for example, an annular shape and is, for example, a plate-shaped ceramic phosphor, and corresponds to the porous substrate 11 in the above-described embodiment.
  • the dichroic film 112 selectively transmits light in the blue wavelength band and selectively transmits light in the green and red wavelength bands.
  • the interfacial antireflection film 122 is for reducing interfacial reflection due to the difference in refractive index between the buffer layer 131 and the phosphor layer 121.
  • the dichroic film 112 and the interface antireflection film 122 correspond to a specific example of a functional layer.
  • the phosphor layer 121 is fixed onto a supporting substrate 140 made of glass or the like via an adhesive layer 141.
  • the support substrate 140 is made of, for example, glass.
  • an acrylic ultraviolet curing adhesive can be used.
  • an interface antireflection film 122 made of, for example, a dielectric multilayer film is formed on the support substrate 140 and the phosphor layer 121 by using, for example, IAD, and then further oxidized, for example.
  • a base layer 131A made of silicon (SiO x ) is formed.
  • metal films 132 and 133 each made of a Ti film are formed on the underlying layers 131A and 131B, and then, as shown in FIG. 12E, the metal film 132 and the metal film 133 are formed. And are arranged to face each other, and pressure (P) is applied to join them.
  • an annealing treatment is performed to oxidize the metal films 132 and 133 with oxygen supplied from the base layers 131A and 131B, thereby making the bonding surfaces transparent and strengthening the bonding force.
  • the buffer layer 131 is formed between the dichroic film 112 and the interface antireflection film 122.
  • the resin forming the adhesive layer 141 is thermally decomposed by this annealing treatment, and the supporting substrate 140 is removed as shown in FIG. 12F.
  • an antireflection film 123 is formed on the phosphor layer 121. As described above, the phosphor wheel 100A is completed.
  • the members are made of an inorganic material, and heat resistance and light resistance are improved as compared with the case where the members are bonded using an organic adhesive. Further, even when the temperature of the phosphor rises due to the irradiation of the excitation light, the phosphor expands integrally with the wheel substrate 111 made of a sapphire substrate having a linear expansion coefficient close to each other, which makes it resistant to cracking.
  • a light transmissive sapphire substrate is used as the wheel substrate 111
  • a light reflective metal substrate may be used, for example.
  • FIG. 13 schematically shows another example of the cross-sectional structure of the phosphor wheel (phosphor wheel 100B), and FIG. 14 shows a phosphor wheel including the laminated structure of the light emitting layer 120 shown in FIG. Fig. 1 schematically shows an example of a cross-sectional structure of 100B.
  • the phosphor wheel 100B is used as, for example, a reflection type wavelength conversion element in a light source section of a projector.
  • the phosphor wheel 100B has a light emitting layer 120 and a cover glass 152 laminated in this order on a rotatable wheel substrate 151.
  • the cover glass 152 is fixed to the wheel substrate 151 by a glass holder heat sink 153 and an inner plate, for example.
  • the light emitting layer 120 includes an adhesive layer 157, a dielectric multilayer film 158, a phosphor layer 121, an antireflection film 123, and an inorganic bonding layer 124, which are stacked in this order from the wheel substrate 151 side.
  • the glass 152 is joined using this technique.
  • An antireflection film 159 is provided on the cover glass 152, for example.
  • a cover glass 152 made of sapphire glass is bonded to the light extraction surface on the phosphor layer 121 made of a ceramic phosphor, so that the phosphor layer 121 is generated by irradiation of excitation light. Heat is exhausted through the cover glass 152 in addition to the wheel substrate 151. That is, in the phosphor wheel 100B, it is possible to form the exhaust heat path on the excitation light incident side in addition to the back surface on the wheel substrate 151 side, and it is possible to reduce the temperature rise of the phosphor layer 121. .. Therefore, it becomes possible to improve the fluorescence conversion efficiency.
  • the incident surface of the excitation light of the phosphor layer 121 can be pressed down by the cover glass 152 in a batch, so that the partial heat generated by the temperature rise of the phosphor layer 121. It is possible to prevent cracking due to deformation.
  • the rotary type wavelength conversion element is shown as an example, but the present technology can be applied to a non-rotational type wavelength conversion element.
  • FIG. 15A illustrates an example of a cross-sectional configuration of the light emitting device 200 (light emitting device 200A), and FIG. 15B schematically illustrates a planar configuration of the light emitting device 200A illustrated in FIG. 15A. Note that FIG. 15A shows a cross section taken along the line II-II shown in FIG. 15B.
  • the light emitting device 200A is used as, for example, a light source for a projector, a headlight light source for an automobile, or the like.
  • the light emitting device 200A is, for example, a non-rotational transmission type wavelength conversion element, and for example, the lens 230 is arranged on the front side of the phosphor layer 211 and the LED 221 is arranged on the rear side.
  • the excitation light emitted from the back surface of the phosphor layer 211 is converted into fluorescence in the phosphor layer 211 and is extracted from the lens 230.
  • the light emitting device 200A includes, for example, an LED 221, a capturing lens 220 that forms a hollow structure 220X around the LED 221, a buffer layer 213C, a dielectric film 213B, an antireflection film 213A, and a phosphor in a device case 240.
  • the layer 211, the dielectric film 212A, the buffer layer 212B, the dielectric film 212C, and the lens 230 are laminated in this order.
  • the device case 240 is arranged on the substrate 250, for example.
  • the phosphor layer 211 and the capturing lens 220, and the phosphor layer 211 and the lens 230 are joined using the present technology.
  • FIG. 15A an example in which the capturing lens 220 that forms the hollow structure 220X is arranged around the LED 221 is shown above the LED 221, but the present invention is not limited to this, and for example, the capturing lens 220 may be omitted and a gap may be formed over the LED 221. May be formed.
  • FIG. 16A shows an example of a cross-sectional structure of the light emitting device 200 (light emitting device 200B), and FIG. 16B schematically shows a planar structure of the light emitting device 200B shown in FIG. 16A. Note that FIG. 16A shows a cross section taken along the line III-III shown in FIG. 16B.
  • the light emitting device 200B is used as, for example, a light source for a projector, a headlight light source for an automobile, or the like.
  • the light emitting device 200B is, for example, a non-rotational reflection type wavelength conversion element, and for example, a lens 230 is arranged on the front surface side of the phosphor layer 211, and a light emitting element such as an LED is arranged outside the light emitting device 200B.
  • the excitation light enters from the lens 230 side, and the fluorescence converted in the phosphor layer 211 and the unconverted excitation light are extracted from the lens 230.
  • the light emitting device 200B includes, for example, a reflection mirror 214 made of, for example, a metal film, a phosphor layer 211, a dielectric film 212A, a buffer layer 212B, a dielectric film 212C, and a lens 230 in a device case 240. They are stacked in order.
  • the phosphor layer 211 and the lens 230 are joined using the present technology.
  • Micron-sized phosphor particles which are close to spheres, reduce the effect of surface reflection and allow light to be efficiently taken into the interior as well as being easy to take out light. Further, the reflected light can be used by another phosphor particle. Therefore, in a general white LED, the phosphor particles have a shape close to a sphere, and the package is filled with a phosphor layer 211 formed by mixing, for example, a sealing resin made of silicon and the phosphor particles.
  • the packaged phosphor layer 211 has a smooth surface, and therefore has a large influence of reflection, has a large fluorescence confinement, and has a low light extraction efficiency, like the YAG ceramic phosphor.
  • the light emitting device 200A and the light emitting device 200B by joining the lens 230 on the phosphor layer 211 via the dielectric film 212A, the buffer layer 212B, and the dielectric film 212C, there is no total reflection. It is possible to provide the light emitting device 200A and the light emitting device 200B with improved light extraction efficiency.
  • Example 3 In a laser amplifier (continuous wave: CW), it is generally known that the temperature of a wavelength conversion element (laser medium) rises as the pump light increases, and the conversion efficiency decreases. In order to solve this, by joining materials having good thermal conductivity for the purpose of cooling and exhausting heat, it is possible to improve the heat dissipation characteristics, and it is possible to maintain the conversion efficiency by reducing the temperature of the laser medium.
  • laser media YAG (nd: 1.81) and CVD diamond (nd: 2.39), YAG (nd: 1.81) and 6H—SiC (nd: 2.6) are used as a material having good thermal conductivity.
  • FIG. 17 shows an example of a cross-sectional structure of a laser amplifier (laser amplifier 300) having a heat removal structure in which a YAG layer 311 having a refractive index of 1.81 and a YAG layer 321 are joined.
  • SiO 2 layers 332 and 333, interface antireflection films 312 and 322 that prevent reflection at the interfaces between the SiO 2 layer 331 and the YAG layer 311, and the SiO 2 layer 331 and the YAG layer 321, respectively are provided on the bonding surfaces.
  • the YAG layer 311 and the YAG layer 321 correspond to a specific example of the porous substrates 11 and 41 in the above modification
  • the SiO 2 layers 332 and 333 correspond to the underlayer
  • these are the buffer layer 331.
  • the interface antireflection films 312 and 322 correspond to a specific example of the functional layer.
  • titanium (Ti) is used as the bonding metal, and is distributed, for example, in the vicinity of the interface between the SiO 2 layer 332 and the SiO 2 333 of the SiO 2 layer 331 forming the buffer layer.
  • Nd-doped YAG having an amplifier function and Cr-doped YAG having a passive Q-switch function are joined.
  • a wavelength conversion layer (amplifier) and a passive Q switch device that generates pulsed light are integrated by including a dielectric multilayer film that reflects the pump light wavelength and transmits only stimulated emission light.
  • a simple pulse laser device structure can be realized.
  • FIG. 18 shows an example of a sectional configuration of a pulse laser element (pulse laser element 400) in which a laser amplifier 411 and a Q switch 421 are joined.
  • SiO 2 layers 432 and 433 are provided on the joint surfaces of the laser amplifier 411 and the Q switch 421, respectively, and pump light is reflected between the SiO 2 layer 431 and the laser amplifier 411 to cause stimulated emission.
  • An edge filter 412 that transmits light is provided, and an interface antireflection film 422 is provided between the SiO 2 layer 331 and the Q switch 421.
  • the laser amplifier 411 and the Q switch 421 correspond to a specific example of the porous substrates 11 and 41 in the above modification
  • the SiO 2 layers 432 and 433 correspond to the underlayer
  • these are buffers.
  • the layer 431 is formed.
  • the edge filter 412 and the interface antireflection film 422 correspond to a specific example of a functional layer.
  • titanium (Ti) is used as the bonding metal, and it is distributed in the vicinity of the interface between the SiO 2 layer 432 and the SiO 2 433 of the SiO 2 layer 331 forming the buffer layer, for example.
  • the porous substrate is described as the porous substrate 11, but the present technology is not limited to the porous substrate, and the metal having low workability, the difficult-to-process glass material, etc. It can also be applied to the joining.
  • the present disclosure can also take the following configurations.
  • the first substrate having one surface and having a density lower than the density determined from the crystal structure and composition of the constituent material, and the second substrate arranged to face the one surface. Since a buffer layer containing at least a metal element having excellent polishing workability is provided between the first and second substrates, the arithmetic mean roughness (Ra) is provided on one surface of the first substrate as a bonding surface with the second substrate. ) It becomes possible to form a small joint surface. Therefore, it is possible to provide a structure having improved bonding strength and an electronic device including the structure.
  • substrate is a structure as described in said (1) which has an area
  • Ra arithmetic average roughness
  • Forming a metal film The method for manufacturing a structure according to (12), wherein the first metal film and the second substrate are bonded together. (14) The manufacturing method according to (13) above, wherein after the first metal film and the second substrate are bonded, heat treatment is performed to form the buffer layer. (15) After forming a first buffer layer containing at least a metal element on the first substrate and polishing the surface of the first buffer layer, a first buffer layer having a microcrystalline structure is formed on the first buffer layer. Forming a metal film, A second buffer layer containing at least a metal element and a second metal film having a microcrystalline structure are formed on the second substrate, The method for manufacturing a structure according to any one of (12) to (14), wherein the first metal film and the second metal film are joined together.
  • a first substrate having one surface and having a density lower than that determined from the crystal structure and composition of the constituent materials; A second substrate arranged to face the one surface of the first substrate; An electronic device comprising a structure provided between the first base and the second base and having a buffer layer containing at least a metal element.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Micromachines (AREA)
  • Laminated Bodies (AREA)

Abstract

La structure selon un mode de réalisation de l'invention comprend : un premier corps de base qui a une surface et une densité inférieure à une densité déterminée à partir de la composition et des structures cristallines des matériaux constitutifs; un second corps de base qui est disposé de façon à faire face à la première surface du premier corps de base; et une couche tampon qui est disposée entre les premier et second corps de base et comprend au moins un élément métallique.
PCT/JP2019/047879 2019-01-07 2019-12-06 Structure, procédé de fabrication de structure et dispositif électronique WO2020144992A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17/413,658 US12023892B2 (en) 2019-01-07 2019-12-06 Structure body, structure body manufacturing method, and electronic apparatus
JP2020565631A JP7371871B2 (ja) 2019-01-07 2019-12-06 構造体および構造体の製造方法ならびに電子機器
DE112019006574.2T DE112019006574T5 (de) 2019-01-07 2019-12-06 Strukturkörper, strukturkörperherstellungsverfahren und elektronisches gerät

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-000662 2019-01-07
JP2019000662 2019-01-07

Publications (1)

Publication Number Publication Date
WO2020144992A1 true WO2020144992A1 (fr) 2020-07-16

Family

ID=71521247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/047879 WO2020144992A1 (fr) 2019-01-07 2019-12-06 Structure, procédé de fabrication de structure et dispositif électronique

Country Status (3)

Country Link
JP (1) JP7371871B2 (fr)
DE (1) DE112019006574T5 (fr)
WO (1) WO2020144992A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243360A (ja) * 2012-05-14 2013-12-05 Boeing Co:The 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造
WO2018216763A1 (fr) * 2017-05-25 2018-11-29 株式会社新川 Procédé de production d'une structure et structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2528546B1 (fr) 2010-01-29 2018-07-25 Smith & Nephew, Inc. Prothèse de genou à préservation des deux ligaments croisés

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243360A (ja) * 2012-05-14 2013-12-05 Boeing Co:The 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造
WO2018216763A1 (fr) * 2017-05-25 2018-11-29 株式会社新川 Procédé de production d'une structure et structure

Also Published As

Publication number Publication date
US20220055343A1 (en) 2022-02-24
JPWO2020144992A1 (fr) 2020-07-16
JP7371871B2 (ja) 2023-10-31
DE112019006574T5 (de) 2021-10-28

Similar Documents

Publication Publication Date Title
KR102109668B1 (ko) 발광 장치 및 그 제조 방법
JP7319549B2 (ja) 光学部材、発光装置及び光学部材の製造方法
EP1940748B1 (fr) Structure composite pour microlithographie et disposition optique
JP6094617B2 (ja) 蛍光光源装置
CN111566065B (zh) 功能元件和功能元件的制造方法以及电子设备
US9895459B2 (en) Ultraviolet ray emitting package having resin adhesive layer and ultraviolet ray irradiating apparatus
JP6668608B2 (ja) 発光装置の製造方法
CN110737085B (zh) 波长转换装置
JP6020637B1 (ja) 蛍光光源装置
JP2012142385A (ja) 半導体デバイスの製造方法
WO2020144992A1 (fr) Structure, procédé de fabrication de structure et dispositif électronique
US12023892B2 (en) Structure body, structure body manufacturing method, and electronic apparatus
JP7438476B2 (ja) 半導体レーザ装置及びその製造方法
JP2021152615A (ja) 光学装置
CN112666780A (zh) 波长转换装置
JP6888546B2 (ja) 蛍光プレート
US11016233B2 (en) Optical waveguide structure, phosphor element, and method for manufacturing optical waveguide structure
US11215812B2 (en) Optical converter wheel
WO2023032967A1 (fr) Composant équipé d'un film et dispositif optique
WO2013031562A1 (fr) Organe réfléchissant de rayon de chaleur
CN113967810A (zh) 焊锡膜、光学器件用部件和光学器件
JP2019003090A (ja) 蛍光体素子の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19908921

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020565631

Country of ref document: JP

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 19908921

Country of ref document: EP

Kind code of ref document: A1