WO2013031562A1 - Organe réfléchissant de rayon de chaleur - Google Patents

Organe réfléchissant de rayon de chaleur Download PDF

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Publication number
WO2013031562A1
WO2013031562A1 PCT/JP2012/070956 JP2012070956W WO2013031562A1 WO 2013031562 A1 WO2013031562 A1 WO 2013031562A1 JP 2012070956 W JP2012070956 W JP 2012070956W WO 2013031562 A1 WO2013031562 A1 WO 2013031562A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
layer
heat ray
silicon oxide
silicon
Prior art date
Application number
PCT/JP2012/070956
Other languages
English (en)
Japanese (ja)
Inventor
雄亮 山崎
武 櫻井
Original Assignee
日本電気硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Publication of WO2013031562A1 publication Critical patent/WO2013031562A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/14—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by a layer differing constitutionally or physically in different parts, e.g. denser near its faces
    • B32B5/145—Variation across the thickness of the layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/281—Interference filters designed for the infrared light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/24—All layers being polymeric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/306—Resistant to heat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers

Definitions

  • the present invention relates to a heat ray reflective member.
  • Patent Document 1 discloses that a furnace lid having a transparent quartz layer and a layer made of gold and titanium nitride is disposed on the transparent quartz layer as a heat ray reflective member in a semiconductor heat treatment apparatus. It is disclosed.
  • the main object of the present invention is to provide a novel heat ray reflecting member that can be suitably used in a heat treatment apparatus used in the manufacture of silicon semiconductors.
  • the heat ray reflective member of the present invention includes a base material and a heat ray reflective layer.
  • the heat ray reflective layer is disposed on the substrate.
  • the heat ray reflective layer is formed by alternately laminating silicon layers and silicon oxide layers.
  • the silicon oxide layer includes a first region and a second region. The second region is located between the first region and the silicon layer. The refractive index of the second region is higher than the refractive index of the first region.
  • the refractive index is a value calculated from the reflectance at a wavelength of 2.5 ⁇ m measured by a spectrophotometer.
  • the silicon oxide layer may have a first silicon oxide layer constituting the first region and a second silicon oxide layer constituting the second region.
  • the first region is preferably made of silicon oxide represented by SiO x
  • the second region is made of silicon oxide represented by SiO y
  • x and y preferably satisfy the relationship x> y.
  • the silicon oxide layer may be provided such that the refractive index gradually decreases as the distance from the silicon layer increases.
  • the substrate is preferably composed of at least one of silicon oxide and silicon.
  • FIG. 1 is a schematic cross-sectional view of a heat ray reflective member according to an embodiment of the present invention.
  • FIG. 2 is a photomicrograph of the cross section of the heat ray reflective member in the example of the present invention.
  • FIG. 3 is a photomicrograph of the cross section of the heat ray reflective member in the comparative example of the present invention.
  • FIG. 4 is a surface photograph of a heat ray reflective member in a comparative example of the present invention.
  • the heat ray reflective member 1 is a member that reflects heat rays that fall within a wavelength range of 1500 nm to 5000 nm, for example.
  • the heat ray reflective member 1 includes a base material 10.
  • the base material 10 is preferably made of at least one of silicon oxide and silicon, for example.
  • the thickness of the substrate 10 is usually about 1 mm to 20 mm and preferably about 2 mm to 10 mm from the viewpoint of durability, weight, and the like.
  • the heat ray reflective layer 20 is arranged on the base material 10.
  • the thickness of the heat ray reflective layer 20 can be appropriately set according to the heat ray reflection characteristics to be imparted to the heat ray reflective member 1 or the like.
  • the thickness of the heat ray reflective layer 20 can be, for example, about 2000 nm to 30000 nm.
  • the heat ray reflective layer 20 is composed of a laminate of at least one silicon layer 22 and at least one silicon oxide layer 21 that are alternately laminated.
  • the silicon layer 22 is made of silicon.
  • the thicknesses of the silicon layer 22 and the silicon oxide layer 21 and the number of stacked layers of the silicon layer 22 and the silicon oxide layer 21 can be appropriately set according to the heat ray reflection characteristics to be imparted to the heat ray reflecting member 1 or the like.
  • the thickness of the silicon layer 22 can be about 100 nm to 1000 nm, for example.
  • the thickness of the silicon oxide layer 21 can be about 100 nm to 2000 nm, for example.
  • the number of stacked layers of the silicon layer 22 and the silicon oxide layer 21 can be about 7 to 50, for example.
  • the silicon oxide layer 21 has a first region 21a and a second region 21b.
  • the second region 21b is disposed so as to be located between the first region 21a and the silicon layer 22.
  • the silicon oxide layer 21 specifically includes a first region 21 a located at the center in the thickness direction of the silicon oxide layer 21 and a second surface constituting one surface of the silicon oxide layer 21. It has the area
  • the ratio of the thickness of the first region 21a to the thickness of the silicon oxide layer 21 is 0.5 to 0.99. Preferably, it is 0.9 to 0.98.
  • the ratio of the thickness of one second region 21b to the thickness of the silicon oxide layer 21 is 0.001 to 0.4. Is preferable, and 0.002 to 0.3 is more preferable.
  • the layer in contact with the base material 10 of the heat ray reflective layer 20 is preferably the silicon oxide layer 21, and the first region 21a and More preferably.
  • the first region 21a and the second region 21b are configured by different layers.
  • the first region 21a is composed of a first silicon oxide layer.
  • the second region 21b is configured by a second silicon oxide layer.
  • the refractive index n2 of the second region 21b is larger than the refractive index n1 of the first region 21a.
  • the refractive index n2 of the second region 21b is preferably 1.1 to 2.4 times greater than the refractive index n1 of the first region 21a, and more preferably 1.5 to 2 times greater.
  • the composition of the first region 21a is SiO x and the composition of the second region 21b is SiO y
  • x and y satisfy the relationship x> y.
  • 1.95 ⁇ x ⁇ 2 is more preferable, and 1.99 ⁇ x ⁇ 2 is even more preferable.
  • the formation method of the silicon layer 22 and the silicon oxide layer 21 is not particularly limited.
  • the silicon layer 22 and the silicon oxide layer 21 can be formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, or the like.
  • the heat ray reflective layer 20 is composed of the silicon layer 22 and the silicon oxide layer 21.
  • the base material 10 is composed of at least one of silicon oxide and silicon.
  • the base material 10 is preferably composed of, for example, a quartz substrate.
  • a second region 21 b is provided between the first region 21 a of the silicon oxide layer 21 and the silicon layer 22.
  • the refractive index of the second region 22a is higher than the refractive index of the first region 21a. Therefore, when the composition of the first region 21a is SiO x and the composition of the second region 21b is SiO y , x and y satisfy the relationship x> y. That is, the second region 21b having a relatively low oxygen ratio is provided between the first region 21a having a relatively high oxygen ratio and the silicon layer 22.
  • the heat ray reflective member 1 peels the heat ray reflective layer 20, and a crack and a crack are hard to produce in the heat ray reflective layer 20 and the base material 10. . Therefore, the heat ray reflective member 1 can be used even in a high temperature atmosphere exceeding 1000 ° C., for example. In other words, the heat ray reflective member 1 has excellent heat resistance.
  • the thermal expansion coefficient of the second region 21 b is located between the thermal expansion coefficient of the first region 21 a and the thermal expansion coefficient of the silicon layer 22. It is conceivable that the second region 21b relieves stress between the first region 21a and the silicon layer 22.
  • the first region 21a and the second region 21b are composed of separate silicon oxide layers having different compositions.
  • the present invention is not limited to this configuration.
  • the first and second regions 21 a and 21 b may be formed in the silicon layer 22 by providing the silicon oxide layer 21 so that the refractive index gradually decreases as the distance from the silicon layer 22 increases.
  • Example 1 Using a sputtering apparatus, a silicon layer and a silicon oxide layer were formed on a cleaned quartz substrate (thickness 4 mm), and a heat ray reflective member having a thermal reflective layer having a layer structure shown in Table 1 was produced. Silicon was used for the target. When the silicon layer was formed, sputtering was performed while introducing argon gas. Further, when the silicon oxide layer was formed, sputtering was performed while introducing argon gas and oxygen gas. No. in Table 1 Is the order of the layers from the quartz substrate. As shown in Table 1, the number of heat ray reflective layers stacked on the quartz substrate is 69. The refractive index of SiO x was 1.46 to 1.47. Further, the refractive index of SiO y was 1.7 to 2.5.
  • the obtained heat ray reflective member was irradiated with heat rays of 1500 nm to 5000 nm, it showed a reflectivity of 95% or more in this wavelength region.
  • the heat ray reflective member was heated at 1000 ° C. for 24 hours. As a result, there was no change in the shape of the heat ray reflective member.
  • FIG. 2 the microscope picture of the cross section of the heat ray reflective member after a heating is shown.
  • Example 1 A heat ray reflective member having a heat ray reflective layer was produced in the same manner as in Example 1 except that the layer configuration shown in Table 2 was adopted.
  • the refractive index of SiO x was 1.46 to 1.47.
  • the obtained heat ray reflective member was irradiated with heat rays of 1500 nm to 5000 nm, it showed a reflectivity of 95% or more in this wavelength region.
  • FIG. 3 shows a micrograph of a cross section of the heat ray reflective member after heating. As apparent from FIG. 3, cracks were generated in the quartz substrate and the heat ray reflective layer. In addition, a part of the heat ray reflective layer was peeled off from the quartz substrate.
  • FIG. 4 shows a photograph of the surface of the heat ray reflective member after heating.
  • FIG. 4 also shows that cracks and peeling occurred in the quartz substrate and the heat ray reflective layer.
  • the silicon oxide layer 21 may be provided such that the refractive index gradually decreases as the distance from the silicon layer 22 increases.
  • Such a silicon oxide layer 21 can be formed, for example, by gradually reducing the concentration of oxygen gas when the silicon oxide layer 21 is formed by sputtering.
  • the heat ray reflective layer 20 may be provided only on one main surface of the base material 10, or may be provided on both main surfaces of the base material 10. Further, the heat ray reflective layer 20 may be divided and provided on both main surfaces.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Optical Filters (AREA)

Abstract

L'invention concerne un nouvel organe réfléchissant de rayon de chaleur qui convient à une utilisation dans un dispositif de traitement à la chaleur ou similaires, utilisé dans un procédé tel que la fabrication de semi-conducteurs de silicium. Un organe réfléchissant de rayon de chaleur (1) comprend un substrat (10) et une couche réfléchissante de rayon de chaleur (20). La couche réfléchissante de rayon de chaleur (20) est disposée sur le substrat (10). La couche réfléchissante de rayon de chaleur (20) est formée en déposant en couches alternées des couches de silicium (22) et des couches d'oxyde de silicium (21). Les couches d'oxyde de silicium (21) comprennent une première région (21a) et une seconde région (21b). La seconde région (21b) est positionnée entre la première région (21a) et la couche de silicium (22). L'indice de réfraction (n2) de la seconde région (21b) est plus élevé que l'indice de réfraction (n1) de la première région (21a).
PCT/JP2012/070956 2011-08-31 2012-08-20 Organe réfléchissant de rayon de chaleur WO2013031562A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-189412 2011-08-31
JP2011189412A JP2013050638A (ja) 2011-08-31 2011-08-31 熱線反射部材

Publications (1)

Publication Number Publication Date
WO2013031562A1 true WO2013031562A1 (fr) 2013-03-07

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Application Number Title Priority Date Filing Date
PCT/JP2012/070956 WO2013031562A1 (fr) 2011-08-31 2012-08-20 Organe réfléchissant de rayon de chaleur

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JP (1) JP2013050638A (fr)
TW (1) TW201312687A (fr)
WO (1) WO2013031562A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111694256A (zh) * 2019-03-14 2020-09-22 精工爱普生株式会社 钟表用部件、钟表用机芯以及钟表

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193810A (ja) * 1998-12-28 2000-07-14 Nitto Koki Kk 反射ミラ―
JP2003344645A (ja) * 2002-05-27 2003-12-03 Hamamatsu Photonics Kk 光反射膜及び光反射膜の製造方法
WO2006028128A1 (fr) * 2004-09-09 2006-03-16 Matsushita Electric Industrial Co., Ltd. Élément de détection d’image à semi-conducteur
WO2009066568A1 (fr) * 2007-11-20 2009-05-28 Konica Minolta Opto, Inc. Elément optique

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193810A (ja) * 1998-12-28 2000-07-14 Nitto Koki Kk 反射ミラ―
JP2003344645A (ja) * 2002-05-27 2003-12-03 Hamamatsu Photonics Kk 光反射膜及び光反射膜の製造方法
WO2006028128A1 (fr) * 2004-09-09 2006-03-16 Matsushita Electric Industrial Co., Ltd. Élément de détection d’image à semi-conducteur
WO2009066568A1 (fr) * 2007-11-20 2009-05-28 Konica Minolta Opto, Inc. Elément optique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111694256A (zh) * 2019-03-14 2020-09-22 精工爱普生株式会社 钟表用部件、钟表用机芯以及钟表

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JP2013050638A (ja) 2013-03-14
TW201312687A (zh) 2013-03-16

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