WO2013031562A1 - Heat-ray reflecting member - Google Patents
Heat-ray reflecting member Download PDFInfo
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- WO2013031562A1 WO2013031562A1 PCT/JP2012/070956 JP2012070956W WO2013031562A1 WO 2013031562 A1 WO2013031562 A1 WO 2013031562A1 JP 2012070956 W JP2012070956 W JP 2012070956W WO 2013031562 A1 WO2013031562 A1 WO 2013031562A1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 14
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/14—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by a layer differing constitutionally or physically in different parts, e.g. denser near its faces
- B32B5/145—Variation across the thickness of the layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/24—All layers being polymeric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/306—Resistant to heat
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Abstract
Provided is a novel heat-ray reflecting member that is suitable for use in a heat treatment device or the like used in a process such as manufacturing of silicon semiconductors. A heat-ray reflecting member (1) comprises a substrate (10) and a heat-ray reflecting layer (20). The heat-ray reflecting layer (20) is disposed on the substrate (10). The heat-ray reflecting layer (20) is formed by alternately layering silicon layers (22) and silicon oxide layers (21). The silicon oxide layers (21) include a first region (21a) and a second region (21b). The second region (21b) is positioned between the first region (21a) and the silicon layer (22). The refractive index (n2) of the second region (21b) is higher than the refractive index (n1) of the first region (21a).
Description
本発明は、熱線反射部材に関する。
The present invention relates to a heat ray reflective member.
従来、シリコン半導体の製造などにおいて使用される熱処理装置などに熱線反射部材が用いられている。例えば特許文献１には、透明石英層と、透明石英層の上に配されており、金、チタンナイトライドからなる層とを有する炉蓋を熱線反射部材として半導体の熱処理装置に配することが開示されている。
Conventionally, a heat ray reflective member is used in a heat treatment apparatus used in the manufacture of a silicon semiconductor or the like. For example, Patent Document 1 discloses that a furnace lid having a transparent quartz layer and a layer made of gold and titanium nitride is disposed on the transparent quartz layer as a heat ray reflective member in a semiconductor heat treatment apparatus. It is disclosed.
しかしながら、透明石英層と、金またはチタンナイトライドからなる層とを有する熱線反射部材を半導体装置に用いた場合、熱線反射部材に含まれる金、チタン、窒素等により、シリコン半導体にコンタミネーションが生じる場合がある。
However, when a heat ray reflective member having a transparent quartz layer and a layer made of gold or titanium nitride is used in a semiconductor device, contamination of the silicon semiconductor is caused by gold, titanium, nitrogen, etc. contained in the heat ray reflective member. There is a case.
本発明は、シリコン半導体の製造などに用いられる熱処理装置などに好適に使用できる新規な熱線反射部材を提供することを主な目的とする。
The main object of the present invention is to provide a novel heat ray reflecting member that can be suitably used in a heat treatment apparatus used in the manufacture of silicon semiconductors.
本発明の熱線反射部材は、基材と、熱線反射層を備える。熱線反射層は、基材の上に配されている。熱線反射層は、シリコン層と酸化シリコン層とが交互に積層されてなる。酸化シリコン層は、第１の領域と、第２の領域とを含む。第２の領域は、第１の領域とシリコン層との間に位置する。第２の領域の屈折率は、第１の領域の屈折率よりも高い。
The heat ray reflective member of the present invention includes a base material and a heat ray reflective layer. The heat ray reflective layer is disposed on the substrate. The heat ray reflective layer is formed by alternately laminating silicon layers and silicon oxide layers. The silicon oxide layer includes a first region and a second region. The second region is located between the first region and the silicon layer. The refractive index of the second region is higher than the refractive index of the first region.
なお、本発明において、屈折率は、分光光度計によって測定した波長２．５μｍにおける反射率から算出した値である。
In the present invention, the refractive index is a value calculated from the reflectance at a wavelength of 2.5 μm measured by a spectrophotometer.
酸化シリコン層は、第１の領域を構成している第１の酸化シリコン層と、第２の領域を構成している第２の酸化シリコン層とを有していてもよい。
The silicon oxide layer may have a first silicon oxide layer constituting the first region and a second silicon oxide layer constituting the second region.
第１の領域は、ＳｉＯｘで表される酸化シリコンからなり、第２の領域は、ＳｉＯｙで表される酸化シリコンからなり、ｘとｙがｘ＞ｙの関係を充足することが好ましい。
The first region is preferably made of silicon oxide represented by SiO x , and the second region is made of silicon oxide represented by SiO y , and x and y preferably satisfy the relationship x> y.
酸化シリコン層は、シリコン層から離れるに従って屈折率が漸減するように設けられていてもよい。
The silicon oxide layer may be provided such that the refractive index gradually decreases as the distance from the silicon layer increases.
基材は、酸化シリコン及びシリコンの少なくとも一方により構成されていることが好ましい。
The substrate is preferably composed of at least one of silicon oxide and silicon.
本発明によれば、シリコン半導体の製造などに用いられる熱処理装置などに好適に使用できる新規な熱線反射部材を提供することができる。
According to the present invention, it is possible to provide a novel heat ray reflecting member that can be suitably used in a heat treatment apparatus used for manufacturing a silicon semiconductor or the like.
以下、本発明を実施した好ましい形態の一例について説明する。但し、下記の実施形態は、単なる例示である。本発明は、下記の実施形態に何ら限定されない。
Hereinafter, an example of a preferable embodiment in which the present invention is implemented will be described. However, the following embodiment is merely an example. The present invention is not limited to the following embodiments.
また、実施形態において参照する図面において、実質的に同一の機能を有する部材は同一の符号で参照することとする。また、実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された物体の寸法の比率などは、現実の物体の寸法の比率などとは異なる場合がある。具体的な物体の寸法比率等は、以下の説明を参酌して判断されるべきである。
In the drawings referred to in the embodiment, members having substantially the same function are referred to by the same reference numerals. The drawings referred to in the embodiments are schematically described, and the ratio of the dimensions of objects drawn in the drawings may be different from the ratio of dimensions of actual objects. The specific dimensional ratio of the object should be determined in consideration of the following description.
熱線反射部材１は、例えば、１５００ｎｍ～５０００ｎｍの波長範囲に入るような熱線を反射させる部材である。図１に示されるように、本実施形態に係る熱線反射部材１は、基材１０を備える。基材１０は、例えば、酸化シリコン及びシリコンのうちの少なくとも一方により構成されていることが好ましい。基板１０の厚みは、耐久性、重量などの観点から、通常１ｍｍ～２０ｍｍ程度であり、２ｍｍ～１０ｍｍ程度であることが好ましい。
The heat ray reflective member 1 is a member that reflects heat rays that fall within a wavelength range of 1500 nm to 5000 nm, for example. As shown in FIG. 1, the heat ray reflective member 1 according to this embodiment includes a base material 10. The base material 10 is preferably made of at least one of silicon oxide and silicon, for example. The thickness of the substrate 10 is usually about 1 mm to 20 mm and preferably about 2 mm to 10 mm from the viewpoint of durability, weight, and the like.
基材１０の上には、熱線反射層２０が配されている。熱線反射層２０の厚みは、熱線反射部材１に付与しようとする熱線反射特性等に応じて適宜設定することができる。熱線反射層２０の厚みは、例えば、２０００ｎｍ～３００００ｎｍ程度とすることができる。
The heat ray reflective layer 20 is arranged on the base material 10. The thickness of the heat ray reflective layer 20 can be appropriately set according to the heat ray reflection characteristics to be imparted to the heat ray reflective member 1 or the like. The thickness of the heat ray reflective layer 20 can be, for example, about 2000 nm to 30000 nm.
熱線反射層２０は、交互に積層された少なくともひとつのシリコン層２２と少なくともひとつの酸化シリコン層２１との積層体により構成されている。シリコン層２２は、シリコンにより構成されている。
The heat ray reflective layer 20 is composed of a laminate of at least one silicon layer 22 and at least one silicon oxide layer 21 that are alternately laminated. The silicon layer 22 is made of silicon.
シリコン層２２及び酸化シリコン層２１のそれぞれの厚み、シリコン層２２と酸化シリコン層２１との積層数は、熱線反射部材１に付与しようとする熱線反射特性等に応じて適宜設定することができる。シリコン層２２の厚みは、例えば、１００ｎｍ～１０００ｎｍ程度とすることができる。酸化シリコン層２１の厚みは、例えば、１００ｎｍ～２０００ｎｍ程度とすることができる。シリコン層２２と酸化シリコン層２１との積層数は、例えば、７～５０程度とすることができる。
The thicknesses of the silicon layer 22 and the silicon oxide layer 21 and the number of stacked layers of the silicon layer 22 and the silicon oxide layer 21 can be appropriately set according to the heat ray reflection characteristics to be imparted to the heat ray reflecting member 1 or the like. The thickness of the silicon layer 22 can be about 100 nm to 1000 nm, for example. The thickness of the silicon oxide layer 21 can be about 100 nm to 2000 nm, for example. The number of stacked layers of the silicon layer 22 and the silicon oxide layer 21 can be about 7 to 50, for example.
酸化シリコン層２１は、第１の領域２１ａと第２の領域２１ｂとを有する。第２の領域２１ｂは、第１の領域２１ａとシリコン層２２との間に位置するように配されている。このため、酸化シリコン層２１は、具体的には、酸化シリコン層２１の厚み方向の中央部に位置する第１の領域２１ａと、酸化シリコン層２１の一の表面を構成している第２の領域２１ｂと、酸化シリコン層２１の他の表面を構成している第２の領域２１ｂとを有する。即ち、酸化シリコン層２１は、厚み方向中央部に位置する第１の領域２１ａと、厚み方向両端部に位置する２つの第２の領域２１ｂとを有する。
The silicon oxide layer 21 has a first region 21a and a second region 21b. The second region 21b is disposed so as to be located between the first region 21a and the silicon layer 22. For this reason, the silicon oxide layer 21 specifically includes a first region 21 a located at the center in the thickness direction of the silicon oxide layer 21 and a second surface constituting one surface of the silicon oxide layer 21. It has the area | region 21b and the 2nd area | region 21b which comprises the other surface of the silicon oxide layer 21. FIG. That is, the silicon oxide layer 21 has a first region 21a located at the center portion in the thickness direction and two second regions 21b located at both end portions in the thickness direction.
酸化シリコン層２１の厚みに対する、第１の領域２１ａの厚みの比（（第１の領域２１ａの厚み）／（酸化シリコン層２１の厚み））は、０．５～０．９９であることが好ましく、０．９～０．９８であることがより好ましい。酸化シリコン層２１の厚みに対する、ひとつの第２の領域２１ｂの厚みの比（（ひとつの第２の領域２１ｂの厚み）／（酸化シリコン層２１の厚み））は、０．００１～０．４であることが好ましく、０．００２～０．３であることがより好ましい。
The ratio of the thickness of the first region 21a to the thickness of the silicon oxide layer 21 ((thickness of the first region 21a) / (thickness of the silicon oxide layer 21)) is 0.5 to 0.99. Preferably, it is 0.9 to 0.98. The ratio of the thickness of one second region 21b to the thickness of the silicon oxide layer 21 ((thickness of one second region 21b) / (thickness of the silicon oxide layer 21)) is 0.001 to 0.4. Is preferable, and 0.002 to 0.3 is more preferable.
なお、基材１０と熱線反射層２０との間の密着強度を高める観点からは、熱線反射層２０の基材１０と接する層を酸化シリコン層２１とすることが好ましく、第１の領域２１ａとすることがより好ましい。
In addition, from the viewpoint of increasing the adhesion strength between the base material 10 and the heat ray reflective layer 20, the layer in contact with the base material 10 of the heat ray reflective layer 20 is preferably the silicon oxide layer 21, and the first region 21a and More preferably.
本実施形態では、第１の領域２１ａと第２の領域２１ｂとは、異なる層により構成されている。第１の領域２１ａは、第１の酸化シリコン層により構成されている。第２の領域２１ｂは、第２の酸化シリコン層により構成されている。
In the present embodiment, the first region 21a and the second region 21b are configured by different layers. The first region 21a is composed of a first silicon oxide layer. The second region 21b is configured by a second silicon oxide layer.
第２の領域２１ｂの屈折率ｎ２は、第１の領域２１ａの屈折率ｎ１よりも大きい。第２の領域２１ｂの屈折率ｎ２は、第１の領域２１ａの屈折率ｎ１よりも、１．１倍～２．４倍大きいことが好ましく、１．５倍～２倍大きいことがより好ましい。
The refractive index n2 of the second region 21b is larger than the refractive index n1 of the first region 21a. The refractive index n2 of the second region 21b is preferably 1.1 to 2.4 times greater than the refractive index n1 of the first region 21a, and more preferably 1.5 to 2 times greater.
従って、第１の領域２１ａの組成をＳｉＯｘとし、第２の領域２１ｂの組成をＳｉＯｙとしたときに、ｘとｙは、ｘ＞ｙの関係を充足する。具体的には、１．９５≦ｘ≦２であることがより好ましく、１．９９≦ｘ≦２であることがさらに好ましい。０．５≦ｙ≦１．９５であることがより好ましく、０．６≦ｙ≦１．４であることがさらに好ましい。
Therefore, when the composition of the first region 21a is SiO x and the composition of the second region 21b is SiO y , x and y satisfy the relationship x> y. Specifically, 1.95 ≦ x ≦ 2 is more preferable, and 1.99 ≦ x ≦ 2 is even more preferable. More preferably, 0.5 ≦ y ≦ 1.95, and even more preferably 0.6 ≦ y ≦ 1.4.
なお、シリコン層２２及び酸化シリコン層２１の形成方法は、特に限定されない。シリコン層２２及び酸化シリコン層２１は、例えば、ＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）法やスパッタリング法等により形成することができる。
In addition, the formation method of the silicon layer 22 and the silicon oxide layer 21 is not particularly limited. The silicon layer 22 and the silicon oxide layer 21 can be formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, or the like.
以上説明したように、熱線反射部材１では、熱線反射層２０がシリコン層２２と酸化シリコン層２１とにより構成されている。このため、熱線反射層が金、チタン、窒素等を含む場合とは異なり、熱線反射部材１をシリコン半導体の製造などに使用される熱処理装置に用いられた場合であっても、シリコン半導体にコンタミネーションが生じ難い。シリコン半導体にコンタミネーションがより生じ難くする観点からは、基材１０が酸化シリコン及びシリコンの少なくとも一方により構成されていることが好ましい。基材１０は、例えば、石英基板により構成されていることが好ましい。
As described above, in the heat ray reflective member 1, the heat ray reflective layer 20 is composed of the silicon layer 22 and the silicon oxide layer 21. For this reason, unlike the case where the heat ray reflective layer contains gold, titanium, nitrogen or the like, even if the heat ray reflective member 1 is used in a heat treatment apparatus used for manufacturing a silicon semiconductor, the silicon semiconductor is contaminated. Nation is unlikely to occur. From the viewpoint of making contamination in the silicon semiconductor more difficult, it is preferable that the base material 10 is composed of at least one of silicon oxide and silicon. The base material 10 is preferably composed of, for example, a quartz substrate.
ところで、シリコン半導体にコンタミネーションが生じることを抑制する観点からは、例えば、Ｓｉ層とＳｉＯ２層とが交互に積層された熱線反射層を設けることも考えられる。しかしながら、Ｓｉ層とＳｉＯ２層とが交互に積層された熱線反射層を設けた場合は、例えば１０００℃を超えるような高温雰囲気中において、熱線反射層が剥離したり、熱線反射層や基材にクラックや割れが生じたりする場合がある。従って、例えば１０００℃を超えるような高温雰囲気中において使用することが困難である。
By the way, from the viewpoint of suppressing the occurrence of contamination in the silicon semiconductor, for example, it is conceivable to provide a heat ray reflective layer in which Si layers and SiO 2 layers are alternately laminated. However, when the heat ray reflective layer in which the Si layer and the SiO 2 layer are alternately laminated is provided, the heat ray reflective layer is peeled off or the heat ray reflective layer or the substrate is formed in a high temperature atmosphere exceeding 1000 ° C., for example. Cracks or cracks may occur. Therefore, it is difficult to use in a high temperature atmosphere exceeding 1000 ° C., for example.
それに対して、熱線反射部材１では、酸化シリコン層２１の第１の領域２１ａとシリコン層２２との間には、第２の領域２１ｂが設けられている。第２の領域２２ａの屈折率は、第１の領域２１ａの屈折率よりも高い。このため、第１の領域２１ａの組成をＳｉＯｘとし、第２の領域２１ｂの組成をＳｉＯｙとしたときに、ｘとｙは、ｘ＞ｙの関係を充足する。即ち、酸素の割合が相対的に高い第１の領域２１ａとシリコン層２２との間に、酸素の割合が相対的に低い第２の領域２１ｂが設けられている。このため、熱線反射部材１を例えば１０００℃を超えるような高温雰囲気中に配した場合であっても、熱線反射層２０の剥離や、熱線反射層２０及び基材１０に割れやクラックが生じ難い。従って、熱線反射部材１は、例えば１０００℃を超えるような高温雰囲気中においても使用可能である。換言すれば、熱線反射部材１は、優れた耐熱性を有する。このような効果が得られる理由としては、第２の領域２１ｂの熱膨張係数が、第１の領域２１ａの熱膨張係数とシリコン層２２の熱膨張係数との間に位置しているため、第２の領域２１ｂが第１の領域２１ａとシリコン層２２との間の応力を緩和することが考えられる。
On the other hand, in the heat ray reflective member 1, a second region 21 b is provided between the first region 21 a of the silicon oxide layer 21 and the silicon layer 22. The refractive index of the second region 22a is higher than the refractive index of the first region 21a. Therefore, when the composition of the first region 21a is SiO x and the composition of the second region 21b is SiO y , x and y satisfy the relationship x> y. That is, the second region 21b having a relatively low oxygen ratio is provided between the first region 21a having a relatively high oxygen ratio and the silicon layer 22. For this reason, even if it is a case where it arrange | positions in the high temperature atmosphere which exceeds 1000 degreeC, for example, the heat ray reflective member 1 peels the heat ray reflective layer 20, and a crack and a crack are hard to produce in the heat ray reflective layer 20 and the base material 10. . Therefore, the heat ray reflective member 1 can be used even in a high temperature atmosphere exceeding 1000 ° C., for example. In other words, the heat ray reflective member 1 has excellent heat resistance. The reason why such an effect is obtained is that the thermal expansion coefficient of the second region 21 b is located between the thermal expansion coefficient of the first region 21 a and the thermal expansion coefficient of the silicon layer 22. It is conceivable that the second region 21b relieves stress between the first region 21a and the silicon layer 22.
なお、本実施形態では、第１の領域２１ａと第２の領域２１ｂとが、組成が相互に異なる別個の酸化シリコン層により構成されている例について説明した。但し、本発明は、この構成に限定されない。例えば、酸化シリコン層２１を、シリコン層２２から離れるに従って屈折率が漸減するように設けることにより、シリコン層２２に第１及び第２の領域２１ａ、２１ｂを形成してもよい。
In the present embodiment, the example in which the first region 21a and the second region 21b are composed of separate silicon oxide layers having different compositions has been described. However, the present invention is not limited to this configuration. For example, the first and second regions 21 a and 21 b may be formed in the silicon layer 22 by providing the silicon oxide layer 21 so that the refractive index gradually decreases as the distance from the silicon layer 22 increases.
以下、本発明について、具体的な実施例に基づいて、さらに詳細に説明するが、本発明は以下の実施例に何ら限定されるものではなく、その要旨を変更しない範囲において適宜変更して実施することが可能である。
Hereinafter, the present invention will be described in more detail on the basis of specific examples. However, the present invention is not limited to the following examples, and may be appropriately modified and implemented without departing from the scope of the present invention. Is possible.
（実施例１）
スパッタリング装置を用いて、洗浄した石英基板上（厚さ４ｍｍ）にシリコン層及び酸化シリコン層を形成し、表１に記載の層構成の熱性反射層を有する熱線反射部材を作製した。ターゲットには、シリコンを用いた。シリコン層を形成しているときには、アルゴンガスを導入しながらスパッタリングを行った。また、酸化シリコン層を形成しているときには、アルゴンガスと酸素ガスを導入しながらスパッタリングを行った。表１におけるＮｏ．は、石英基板からの層の順序である。表１に示すように、石英基板に対する熱線反射層の積層数は、６９である。ＳｉＯｘの屈折率は、１．４６～１．４７であった。また、ＳｉＯｙの屈折率は、１．７～２．５であった。 (Example 1)
Using a sputtering apparatus, a silicon layer and a silicon oxide layer were formed on a cleaned quartz substrate (thickness 4 mm), and a heat ray reflective member having a thermal reflective layer having a layer structure shown in Table 1 was produced. Silicon was used for the target. When the silicon layer was formed, sputtering was performed while introducing argon gas. Further, when the silicon oxide layer was formed, sputtering was performed while introducing argon gas and oxygen gas. No. in Table 1 Is the order of the layers from the quartz substrate. As shown in Table 1, the number of heat ray reflective layers stacked on the quartz substrate is 69. The refractive index of SiO x was 1.46 to 1.47. Further, the refractive index of SiO y was 1.7 to 2.5.
スパッタリング装置を用いて、洗浄した石英基板上（厚さ４ｍｍ）にシリコン層及び酸化シリコン層を形成し、表１に記載の層構成の熱性反射層を有する熱線反射部材を作製した。ターゲットには、シリコンを用いた。シリコン層を形成しているときには、アルゴンガスを導入しながらスパッタリングを行った。また、酸化シリコン層を形成しているときには、アルゴンガスと酸素ガスを導入しながらスパッタリングを行った。表１におけるＮｏ．は、石英基板からの層の順序である。表１に示すように、石英基板に対する熱線反射層の積層数は、６９である。ＳｉＯｘの屈折率は、１．４６～１．４７であった。また、ＳｉＯｙの屈折率は、１．７～２．５であった。 (Example 1)
Using a sputtering apparatus, a silicon layer and a silicon oxide layer were formed on a cleaned quartz substrate (thickness 4 mm), and a heat ray reflective member having a thermal reflective layer having a layer structure shown in Table 1 was produced. Silicon was used for the target. When the silicon layer was formed, sputtering was performed while introducing argon gas. Further, when the silicon oxide layer was formed, sputtering was performed while introducing argon gas and oxygen gas. No. in Table 1 Is the order of the layers from the quartz substrate. As shown in Table 1, the number of heat ray reflective layers stacked on the quartz substrate is 69. The refractive index of SiO x was 1.46 to 1.47. Further, the refractive index of SiO y was 1.7 to 2.5.
次に、得られた熱線反射部材について、１５００ｎｍ～５０００ｎｍの熱線を照射したところ、この波長領域において、９５％以上の反射率を示した。
Next, when the obtained heat ray reflective member was irradiated with heat rays of 1500 nm to 5000 nm, it showed a reflectivity of 95% or more in this wavelength region.
次に、熱線反射部材を１０００℃で２４時間加熱した。その結果、熱線反射部材の形状に変化はなかった。図２に、加熱後の熱線反射部材の断面の顕微鏡写真を示す。
Next, the heat ray reflective member was heated at 1000 ° C. for 24 hours. As a result, there was no change in the shape of the heat ray reflective member. In FIG. 2, the microscope picture of the cross section of the heat ray reflective member after a heating is shown.
次に、加熱後の熱線反射部材について、１５００ｎｍ～５０００ｎｍの熱線を照射したところ、この波長領域において、９５％以上の反射率を示した。
Next, when the heat ray reflective member after heating was irradiated with heat rays of 1500 nm to 5000 nm, a reflectance of 95% or more was exhibited in this wavelength region.
（比較例１）
表２に記載の層構成としたこと以外は、実施例１と同様にして、熱線反射層を有する熱線反射部材を作製した。ＳｉＯｘの屈折率は、１．４６～１．４７であった。 (Comparative Example 1)
A heat ray reflective member having a heat ray reflective layer was produced in the same manner as in Example 1 except that the layer configuration shown in Table 2 was adopted. The refractive index of SiO x was 1.46 to 1.47.
表２に記載の層構成としたこと以外は、実施例１と同様にして、熱線反射層を有する熱線反射部材を作製した。ＳｉＯｘの屈折率は、１．４６～１．４７であった。 (Comparative Example 1)
A heat ray reflective member having a heat ray reflective layer was produced in the same manner as in Example 1 except that the layer configuration shown in Table 2 was adopted. The refractive index of SiO x was 1.46 to 1.47.
次に、得られた熱線反射部材について、１５００ｎｍ～５０００ｎｍの熱線を照射したところ、この波長領域において、９５％以上の反射率を示した。
Next, when the obtained heat ray reflective member was irradiated with heat rays of 1500 nm to 5000 nm, it showed a reflectivity of 95% or more in this wavelength region.
次に、熱線反射部材を１０００℃で２４時間加熱した。その結果、図３に、加熱後の熱線反射部材の断面の顕微鏡写真を示す。図３から明らかなように、石英基板と熱線反射層にクラックが発生していた。また、熱線反射層の一部が石英基板から剥離していた。
Next, the heat ray reflective member was heated at 1000 ° C. for 24 hours. As a result, FIG. 3 shows a micrograph of a cross section of the heat ray reflective member after heating. As apparent from FIG. 3, cracks were generated in the quartz substrate and the heat ray reflective layer. In addition, a part of the heat ray reflective layer was peeled off from the quartz substrate.
図４に、加熱後の熱線反射部材の表面の写真を示す。図４からも、石英基板と熱線反射層にクラックと剥離が発生していることが分かる。
FIG. 4 shows a photograph of the surface of the heat ray reflective member after heating. FIG. 4 also shows that cracks and peeling occurred in the quartz substrate and the heat ray reflective layer.
なお、本発明はここでは記載していない様々な実施形態を含む。例えば、酸化シリコン層２１は、シリコン層２２から離れるに従って屈折率が漸減するように設けられていてもよい。このような酸化シリコン層２１は、例えばスパッタリング法で酸化シリコン層２１を形成する際に、酸素ガスの濃度を徐々に下げていくことにより形成することができる。
The present invention includes various embodiments not described here. For example, the silicon oxide layer 21 may be provided such that the refractive index gradually decreases as the distance from the silicon layer 22 increases. Such a silicon oxide layer 21 can be formed, for example, by gradually reducing the concentration of oxygen gas when the silicon oxide layer 21 is formed by sputtering.
熱線反射層２０は、基材１０の一主面の上のみに設けられていてもよいし、基材１０の両主面に設けられていてもよい。また、熱線反射層２０を分割し、両主面に分けて設けても良い。
The heat ray reflective layer 20 may be provided only on one main surface of the base material 10, or may be provided on both main surfaces of the base material 10. Further, the heat ray reflective layer 20 may be divided and provided on both main surfaces.
以上のように、本発明はここでは記載していない様々な実施形態を含む。従って、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。
As described above, the present invention includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.
１…熱線反射部材
１０…基材
２０…熱線反射層
２１…酸化シリコン層
２１ａ…第１の領域
２１ｂ…第２の領域
２２…シリコン層 DESCRIPTION OFSYMBOLS 1 ... Heat ray reflective member 10 ... Base material 20 ... Heat ray reflective layer 21 ... Silicon oxide layer 21a ... 1st area | region 21b ... 2nd area | region 22 ... Silicon layer
１０…基材
２０…熱線反射層
２１…酸化シリコン層
２１ａ…第１の領域
２１ｂ…第２の領域
２２…シリコン層 DESCRIPTION OF
Claims (5)
- 基材と、
前記基材の上に配されており、シリコン層と酸化シリコン層とが交互に積層されてなる熱線反射層と、
を備え、
前記酸化シリコン層は、
第１の領域と、
前記第１の領域と前記シリコン層との間に位置する第２の領域と、
を含み、
前記第２の領域の屈折率が前記第１の領域の屈折率よりも高い、熱線反射部材。 A substrate;
A heat ray reflective layer that is disposed on the base material, and in which silicon layers and silicon oxide layers are alternately laminated;
With
The silicon oxide layer is
A first region;
A second region located between the first region and the silicon layer;
Including
The heat ray reflective member, wherein a refractive index of the second region is higher than a refractive index of the first region. - 前記酸化シリコン層は、前記第１の領域を構成している第１の酸化シリコン層と、前記第２の領域を構成している第２の酸化シリコン層とを有する、請求項１に記載の熱線反射部材。 The said silicon oxide layer has a 1st silicon oxide layer which comprises the said 1st area | region, and a 2nd silicon oxide layer which comprises the said 2nd area | region. Heat ray reflecting member.
- 前記第１の領域は、ＳｉＯｘで表される酸化シリコンからなり、前記第２の領域は、ＳｉＯｙで表される酸化シリコンからなり、ｘとｙは、ｘ＞ｙの関係を充足する、請求項１または２に記載の熱線反射部材。 The first region is made of silicon oxide represented by SiO x , the second region is made of silicon oxide represented by SiO y , and x and y satisfy the relationship x> y. The heat ray reflective member according to claim 1 or 2.
- 前記酸化シリコン層は、前記シリコン層から離れるに従って屈折率が漸減するように設けられている、請求項１に記載の熱線反射部材。 The heat ray reflective member according to claim 1, wherein the silicon oxide layer is provided such that the refractive index gradually decreases as the distance from the silicon layer increases.
- 前記基材は、酸化シリコン及びシリコンの少なくとも一方により構成されている、請求項１～４のいずれか一項に記載の熱線反射部材。 The heat ray reflective member according to any one of claims 1 to 4, wherein the base material is composed of at least one of silicon oxide and silicon.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011189412A JP2013050638A (en) | 2011-08-31 | 2011-08-31 | Heat-ray reflective member |
| JP2011-189412 | 2011-08-31 |
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| Publication Number | Publication Date |
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| WO2013031562A1 true WO2013031562A1 (en) | 2013-03-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2012/070956 WO2013031562A1 (en) | 2011-08-31 | 2012-08-20 | Heat-ray reflecting member |
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| JP (1) | JP2013050638A (en) |
| TW (1) | TW201312687A (en) |
| WO (1) | WO2013031562A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111694256A (en) * | 2019-03-14 | 2020-09-22 | 精工爱普生株式会社 | Timepiece component, timepiece movement, and timepiece |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000193810A (en) * | 1998-12-28 | 2000-07-14 | Nitto Koki Kk | Reflection mirror |
| JP2003344645A (en) * | 2002-05-27 | 2003-12-03 | Hamamatsu Photonics Kk | Light reflection film and its manufacturing method |
| WO2006028128A1 (en) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup element |
| WO2009066568A1 (en) * | 2007-11-20 | 2009-05-28 | Konica Minolta Opto, Inc. | Optical element |
-
2011
- 2011-08-31 JP JP2011189412A patent/JP2013050638A/en not_active Withdrawn
-
2012
- 2012-08-20 WO PCT/JP2012/070956 patent/WO2013031562A1/en active Application Filing
- 2012-08-31 TW TW101131903A patent/TW201312687A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000193810A (en) * | 1998-12-28 | 2000-07-14 | Nitto Koki Kk | Reflection mirror |
| JP2003344645A (en) * | 2002-05-27 | 2003-12-03 | Hamamatsu Photonics Kk | Light reflection film and its manufacturing method |
| WO2006028128A1 (en) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup element |
| WO2009066568A1 (en) * | 2007-11-20 | 2009-05-28 | Konica Minolta Opto, Inc. | Optical element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111694256A (en) * | 2019-03-14 | 2020-09-22 | 精工爱普生株式会社 | Timepiece component, timepiece movement, and timepiece |
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| TW201312687A (en) | 2013-03-16 |
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