TW201312687A - Heat-ray reflecting member - Google Patents

Abstract

Provided is a novel heat-ray reflecting member that is suitable for use in a heat treatment device or the like used in a process such as manufacturing of silicon semiconductors. A heat-ray reflecting member (1) comprises a substrate (10) and a heat-ray reflecting layer (20). The heat-ray reflecting layer (20) is disposed on the substrate (10). The heat-ray reflecting layer (20) is formed by alternately layering silicon layers (22) and silicon oxide layers (21). The silicon oxide layers (21) include a first region (21a) and a second region (21b). The second region (21b) is positioned between the first region (21a) and the silicon layer (22). The refractive index (n2) of the second region (21b) is higher than the refractive index (n1) of the first region (21a).

Description

Hot wire reflection member

The present invention relates to a heat ray reflecting member.

Previously, the heat reflecting member was used for a heat treatment apparatus or the like used in the manufacture of a semiconductor or the like. For example, Patent Document 1 discloses a case where a furnace cover having a transparent quartz layer and a layer of gold or titanium nitride disposed on a transparent quartz layer is disposed as a heat reflecting member in a semiconductor.

[Previous Technical Literature] [Patent Document 1

[Patent Document 1] Japanese Patent Laid-Open No. 9-17740

However, in the case where a heat reflecting member having a transparent quartz layer and a layer containing gold or titanium nitride is used for a semiconductor device, there is a generation of germanium semiconductor due to gold, titanium, nitrogen, or the like contained in the heat reflecting member. The situation of pollution.

A main object of the present invention is to provide a novel heat ray reflection member which can be preferably used for a heat treatment apparatus or the like used in the manufacture of bismuth semiconductors and the like.

The heat ray reflecting member of the present invention comprises a substrate and a heat ray reflecting layer. The heat reflecting layer is disposed on the substrate. Hot-line reflective layer is an alternating layer of tantalum and tantalum oxide Layered. The ruthenium oxide layer includes a first region and a second region. The second area is located between the first area and the first layer. The refractive index of the second region is higher than the refractive index of the first region.

Further, in the present invention, the refractive index is a value calculated from a reflectance at a wavelength of 2.5 μm measured by a spectrophotometer.

The ruthenium oxide layer may have a first ruthenium oxide layer constituting the first region and a second ruthenium oxide layer constituting the second region.

Preferably, the first region contains ruthenium oxide represented by SiO _x , the second region contains ruthenium oxide represented by SiO _y , and x and y satisfy the relationship of x > y.

The yttria layer can also be disposed in such a manner that the refractive index decreases as it leaves the ruthenium layer.

Preferably, the substrate comprises at least one of cerium oxide and cerium.

According to the present invention, a novel heat ray reflection member which can be preferably used for a heat treatment apparatus or the like used in the manufacture of a bismuth semiconductor or the like can be provided.

Hereinafter, an example of a preferred embodiment of the present invention will be described. However, the embodiments described below are merely examples. The present invention is not limited by the following embodiments.

Further, in the drawings referred to in the embodiments, members having substantially the same functions are referred to by the same reference numerals. Further, the drawings referred to in the embodiment are schematically described, and the ratio of the size of the object drawn in the drawing may be different from the ratio of the size of the real object. The size ratio of the specific object, etc. should be judged by referring to the following description.

The heat ray reflection member 1 is, for example, a member that reflects a heat ray that falls within a wavelength range of 1500 nm to 5000 nm. As shown in Fig. 1, the heat ray-reflecting member 1 of the present embodiment includes a substrate 10. Substrate 10 preferably comprises at least one of, for example, cerium oxide and cerium. The thickness of the substrate 10 is usually from about 1 mm to about 20 mm, preferably from about 2 mm to about 10 mm, from the viewpoints of durability, weight, and the like.

A heat ray reflection layer 20 is disposed on the substrate 10. The thickness of the heat ray reflection layer 20 can be appropriately set in accordance with the heat ray reflection characteristics to be imparted to the heat ray reflection member 1 and the like. The thickness of the heat ray reflection layer 20 can be set, for example, to about 2000 nm to 30,000 nm.

The heat ray reflection layer 20 is composed of a laminate of at least one layer of ruthenium layer 22 and at least one layer of ruthenium oxide layer 21 which are alternately laminated. The layer 22 contains germanium.

The thickness of each of the ruthenium layer 22 and the ruthenium oxide layer 21 and the number of layers of the ruthenium layer 22 and the ruthenium oxide layer 21 can be appropriately set depending on the heat ray reflection characteristics to be applied to the heat ray reflection member 1 and the like. The thickness of the germanium layer 22 can be set to, for example, about 100 nm to 1000 nm. The thickness of the yttrium oxide layer 21 can be set to, for example, about 100 nm to 2000 nm. The number of layers of the ruthenium layer 22 and the ruthenium oxide layer 21 can be, for example, about 7 to 50 degrees.

The ruthenium oxide layer 21 has a first region 21a and a second region 21b. The second region 21b is disposed so as to be located between the first region 21a and the ruthenium layer 22. Therefore, specifically, the ruthenium oxide layer 21 has the first region 21a located at the central portion in the thickness direction of the ruthenium oxide layer 21, the second region 21b constituting one surface of the ruthenium oxide layer 21, and other surfaces constituting the ruthenium oxide layer 21. The second area 21b. In other words, the ruthenium oxide layer 21 has the first region 21a located at the central portion in the thickness direction and the two second regions 21b located at both end portions in the thickness direction.

The ratio of the thickness of the first region 21a to the thickness of the ruthenium oxide layer 21 ((thickness of the first region 21a) / (thickness of the ruthenium oxide layer 21)) is preferably from 0.5 to 0.99, more preferably from 0.9 to 0.98. The ratio of the thickness of one second region 21b to the thickness of the ruthenium oxide layer 21 ((the thickness of one second region 21b) / (the thickness of the ruthenium oxide layer 21)) is preferably 0.001 to 0.4, more preferably 0.002 to 0.3. .

Further, from the viewpoint of improving the adhesion strength between the substrate 10 and the heat ray reflection layer 20, it is preferable that the layer of the heat ray reflection layer 20 in contact with the substrate 10 is the ruthenium oxide layer 21, and more preferably set. The first area 21a.

In the present embodiment, the first region 21a and the second region 21b are composed of different layers. The first region 21a is composed of a first ruthenium oxide layer. The second region 21b is composed of a second ruthenium oxide layer.

The refractive index n2 of the second region 21b is larger than the refractive index n1 of the first region 21a. The refractive index n2 of the second region 21b is preferably 1.1 times to 2.4 times larger than the refractive index n1 of the first region 21a, and more preferably 1.5 times to 2 times larger.

Therefore, when the composition of the first region 21a is SiO _x and the composition of the second region 21b is SiO _y , x and y satisfy the relationship of x>y. Specifically, it is preferably 1.95 ≦ x ≦ 2, and further preferably 1.99 ≦ x ≦ 2. More preferably, it is 0.5 ≦ y ≦ 1.95, and further preferably 0.6 ≦ y ≦ 1.4.

Further, the method of forming the ruthenium layer 22 and the ruthenium oxide layer 21 is not particularly limited. The ruthenium layer 22 and the ruthenium oxide layer 21 can be formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, or the like.

As described above, in the heat reflecting member 1, the heat reflecting layer 20 is composed of the tantalum layer 22 and the tantalum oxide layer 21. Therefore, unlike the case where the heat reflecting layer contains gold, titanium, nitrogen, or the like, even if the heat reflecting member 1 is used for the half In the case of a heat treatment apparatus used in the manufacture of a conductor or the like, it is also difficult to cause contamination in the semiconductor. It is preferable that the substrate 10 contains at least one of ruthenium oxide and ruthenium from the viewpoint that the ruthenium semiconductor is more difficult to cause contamination. The substrate 10 preferably contains, for example, a quartz substrate.

However, from the viewpoint of suppressing contamination of the germanium semiconductor, it is also conceivable, for example, to provide a heat reflecting layer in which an Si layer and an SiO ₂ layer are alternately laminated. However, in the case where a heat ray reflection layer in which an Si layer and an SiO ₂ layer are alternately laminated is provided, for example, in a high temperature environment exceeding 1000 ° C, the heat ray reflection layer is peeled off, or is generated on a heat ray reflection layer or a substrate. Crack or rupture. Therefore, it is difficult to use in a high-temperature environment such as more than 1000 °C.

On the other hand, in the heat reflecting member 1 , the second region 21 b is provided between the first region 21 a of the yttrium oxide layer 21 and the ruthenium layer 22 . The refractive index of the second region 22a is higher than the refractive index of the first region 21a. Therefore, when the composition of the first region 21a is SiO _x and the composition of the second region 21b is SiO _y , x and y satisfy the relationship of x>y. That is, the second region 21b having a relatively low proportion of oxygen is provided between the first region 21a and the ruthenium layer 22 having a relatively high ratio of oxygen. Therefore, even when the heat reflecting member 1 is disposed in a high temperature environment of, for example, more than 1000 ° C, peeling of the heat reflecting layer 20 is difficult, or cracking or cracking of the heat reflecting layer 20 and the substrate 10 is difficult. Therefore, the heat reflecting member 1 can also be used in a high temperature environment of, for example, more than 1000 °C. In other words, the heat reflecting member 1 has excellent heat resistance. It is considered that the reason for obtaining such an effect is that since the thermal expansion coefficient of the second region 21b is located between the thermal expansion coefficient of the first region 21a and the thermal expansion coefficient of the ruthenium layer 22, the second region 21b relaxes the first region 21a and the ruthenium layer 22 The stress between them.

Further, in the present embodiment, an example in which the first region 21a and the second region 21b are composed of different ruthenium oxide layers having different compositions from each other has been described. However, the present invention is not limited to this configuration. For example, the first and second regions 21a and 21b may be formed in the buffer layer 22 by providing the ruthenium oxide layer 21 such that the refractive index decreases as it leaves the ruthenium layer 22.

In the following, the present invention will be described in more detail based on the specific examples, but the present invention is not limited to the following examples, and may be appropriately modified without departing from the spirit and scope of the invention.

(Example 1)

A heat-reflecting member having a heat-reflecting layer having a layer structure described in Table 1 was formed by using a sputtering apparatus to form a tantalum layer and a tantalum oxide layer on the cleaned quartz substrate (thickness: 4 mm). Use 矽 for the target. When the ruthenium layer is formed, sputtering is performed while introducing argon gas. Further, when the ruthenium oxide layer is formed, argon gas and oxygen gas are introduced while performing sputtering. The No. in Table 1 is the order of the layers from the quartz substrate. As shown in Table 1, the number of layers of the heat reflecting layer with respect to the quartz substrate was 69. The refractive index of SiO _x is 1.46~1.47. Further, the refractive index of SiO _y is 1.7 to 2.5.

Then, the obtained hot wire reflecting member is irradiated with a hot line of 1500 nm to 5000 nm, and as a result, a reflectance of 95% or more is exhibited in the wavelength region.

Then, the heat reflecting member was heated at 1000 ° C for 24 hours. As a result, the shape of the heat ray reflecting member does not change. A micrograph of a cross section of the heated heat reflecting member after heating is shown in Fig. 2 .

Then, the heated hot wire reflecting member is irradiated with a hot line of 1500 nm to 5000 nm, and as a result, a reflectance of 95% or more is exhibited in the wavelength region.

(Comparative Example 1)

A heat ray reflection member having a heat ray reflection layer was produced in the same manner as in Example 1 except that the layer configuration described in Table 2 was used. The refractive index of SiO _x is 1.46~1.47.

Next, the obtained hot wire reflecting member is irradiated with a hot line of 1500 nm to 5000 nm, and as a result, a reflectance of 95% or more is exhibited in the wavelength region.

Then, the heat reflecting member was heated at 1000 ° C for 24 hours. As a result, a micrograph of a cross section of the heated heat reflecting member after heating is shown in Fig. 3 . As is clear from Fig. 3, cracks are generated in the quartz substrate and the heat reflecting layer. Further, one portion of the heat ray reflection layer is peeled off from the quartz substrate.

A photograph of the surface of the heated heat reflecting member after heating is shown in Fig. 4 . It can also be seen from Fig. 4 that cracks and peeling occur in the quartz substrate and the heat reflecting layer.

Furthermore, the present invention encompasses various embodiments not described herein. For example, the yttria layer 21 can also be disposed in such a manner that the refractive index decreases as it leaves the ruthenium layer 22. Such a ruthenium oxide layer 21 can be formed, for example, by forming a ruthenium oxide layer 21 by a sputtering method, by gradually decreasing the concentration of oxygen.

The heat ray reflection layer 20 may be disposed only on one main surface of the substrate 10 or on both main surfaces of the substrate 10. Further, the heat ray reflection layer 20 may be divided and provided separately on the two main faces.

As described above, the present invention encompasses various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the specific matters of the invention involved in the scope of the patent application as described above.

1‧‧‧Hot line reflection member

10‧‧‧Substrate

20‧‧‧Hot line reflector

21‧‧‧Oxide layer

21a‧‧‧1st area

21b‧‧‧2nd area

22‧‧‧矽

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a heat reflecting member according to an embodiment of the present invention.

Fig. 2 is a photomicrograph of a cross section of a heat reflecting member in an embodiment of the present invention.

Fig. 3 is a photomicrograph of a cross section of a heat reflecting member in a comparative example of the present invention.

Fig. 4 is a photograph of the surface of the heat ray reflecting member in the comparative example of the present invention.

1‧‧‧Hot line reflection member

10‧‧‧Substrate

20‧‧‧Hot line reflector

21‧‧‧Oxide layer

21a‧‧‧1st area

21b‧‧‧2nd area

22‧‧‧矽

Claims (5)

A heat ray reflecting member comprising: a substrate; and a heat ray reflecting layer disposed on the substrate and alternately laminating a ruthenium layer and a ruthenium oxide layer; and the ruthenium oxide layer comprises: a first region; a region 2 between the first region and the ruthenium layer; and a refractive index of the second region higher than a refractive index of the first region. The heat reflecting member according to claim 1, wherein the ruthenium oxide layer has a first ruthenium oxide layer constituting the first region and a second ruthenium oxide layer constituting the second region. The heat reflecting member according to claim 1, wherein the first region includes cerium oxide represented by SiO _x , the second region includes cerium oxide represented by SiO _y , and x and y satisfy a relationship of x > y. The heat reflecting member of claim 1, wherein the yttria layer is disposed in such a manner that a refractive index decreases as it leaves the ruthenium layer. The heat reflecting member according to any one of claims 1 to 4, wherein the substrate comprises at least one of cerium oxide and cerium.