WO2020143485A1 - 半导体、x射线探测器及显示设备 - Google Patents

半导体、x射线探测器及显示设备 Download PDF

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Publication number
WO2020143485A1
WO2020143485A1 PCT/CN2019/129311 CN2019129311W WO2020143485A1 WO 2020143485 A1 WO2020143485 A1 WO 2020143485A1 CN 2019129311 W CN2019129311 W CN 2019129311W WO 2020143485 A1 WO2020143485 A1 WO 2020143485A1
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layer
semiconductor
photoelectric conversion
light
signal reading
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French (fr)
Inventor
卓恩宗
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HKC Co Ltd
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HKC Co Ltd
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Priority claimed from CN201910031218.6A external-priority patent/CN109786499A/zh
Priority claimed from CN201910038170.1A external-priority patent/CN109782330B/zh
Application filed by HKC Co Ltd filed Critical HKC Co Ltd
Publication of WO2020143485A1 publication Critical patent/WO2020143485A1/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings

Definitions

  • the present application relates to the field of detectors, in particular to a semiconductor, X-ray detector and display equipment.
  • X-ray detectors are widely used in medical instruments, such as chest X-ray imaging using X-rays; at present, the photoelectric conversion function of X-ray detectors is mainly completed by amorphous silicon photodiodes, and X-rays pass through scintillators (currently mainly CsI ) Converted into visible light, and then converted into electrical signal by amorphous silicon photodiode and outputted by thin film transistor (TFT).
  • CsI scintillators
  • amorphous silicon Since the structure of amorphous silicon is not stable enough, it mainly absorbs light with shorter wavelengths, such as blue-green light, but cannot absorb light with longer wavelengths, such as red-green light, so that the photoelectricity using amorphous silicon as the light conversion layer Diodes cannot convert light wave information with longer wavelengths, so the function of X-ray detectors is limited.
  • the main purpose of the present application is to provide a semiconductor that prevents amorphous silicon photodiodes from absorbing light waves with longer wavelengths.
  • the present invention provides a semiconductor, the semiconductor includes:
  • a photoelectric conversion layer the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;
  • the transparent conductive film is located on the light incident side of the photoelectric conversion layer.
  • the germanium particles are nano germanium.
  • the germanium particles are uniform in size.
  • the porous structure is formed of one or more of germanium oxide, germanium nitride, an oxide containing germanium and silicon, and a nitride containing germanium and silicon.
  • the semiconductor further includes a P-doped layer and an N-doped layer; the P-doped layer is located on the light incident side of the photoelectric conversion layer and is between the transparent conductive film and the photoelectric conversion layer The N-doped layer is located on the light exit side of the photoelectric conversion layer.
  • the semiconductor further includes an insulating medium, and the P-doped layer and the N-doped layer are wrapped in the insulating medium, so that the P-doped layer is insulated from the N-doped layer.
  • the N-doped layer is located on the light exit side of the photoelectric conversion layer, the semiconductor further includes an insulating medium, and the P-doped layer and the N-doped layer are wrapped in the insulating medium, so that P doping The impurity layer is insulated from the N-doped layer.
  • the X-ray detector includes:
  • a semiconductor the semiconductor includes a photoelectric conversion layer, the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;
  • a signal reading layer is located on the light incident side of the photoelectric conversion layer, and the signal reading layer is electrically connected to the semiconductor;
  • the scintillator is a pure cesium iodide layer or a sodium-doped cesium iodide layer, the scintillator is located on the light incident side of the semiconductor, and the semiconductor performs photoelectric conversion on the visible light;
  • the light blocking member is located between the scintillator and the signal reading layer and corresponds to the position of the active layer in the signal reading layer to block the incident light of the active layer.
  • the signal reading layer is a thin film transistor
  • the semiconductor is electrically connected to the drain of the thin film transistor through the insulating protective layer of the thin film transistor.
  • the signal reading layer is a thin film transistor
  • the photoelectric conversion layer does not penetrate the insulating protective layer of the thin film transistor, and is electrically connected to the drain of the thin film transistor through a wire.
  • the semiconductor and the light shield are arranged side by side between the scintillator and the signal reading layer.
  • the semiconductor and the light shield are vertically stacked between the scintillator and the signal reading layer, and the semiconductor is located on the light incident side of the light shield.
  • the semiconductor and the signal reading layer are electrically connected by wires.
  • the X-ray detector further includes a protective layer, which is filled in the gap between the signal reading layer and the scintillator to read the shading member, semiconductor, and signal The layer is isolated from the outside environment.
  • the protective layer is composed of silicon oxide or silicon nitride.
  • the scintillator includes cesium iodide.
  • This application also proposes a display device, which includes:
  • a semiconductor the semiconductor includes a photoelectric conversion layer, the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;
  • a signal reading layer is located on the light incident side of the photoelectric conversion layer, and the signal reading layer is electrically connected to the semiconductor;
  • the scintillator is a pure cesium iodide layer or a sodium-doped cesium iodide layer, the scintillator is located on the light incident side of the semiconductor, and the semiconductor performs photoelectric conversion on the visible light;
  • a light blocking member located between the scintillator and the signal reading layer and corresponding to the position of the active layer in the signal reading layer, to block the incident light of the active layer;
  • the display device further includes an imaging device electrically connected to the signal reading layer.
  • the technical solution of the present application replaces the photoelectric conversion layer in the semiconductor with a porous structure filled with germanium particles, and provides a transparent conductive film on the light incident side of the photoelectric conversion layer.
  • germanium can absorb more wavelengths Long light waves fill germanium particles into a uniform porous structure and act as a light conversion layer for semiconductors, enabling semiconductors to absorb long light waves stably and convert light information with longer wavelengths. Limitation of the conversion of signals into electrical signals.
  • FIG. 1 is a schematic structural diagram of an embodiment of a semiconductor of the present application
  • FIG. 2 is a partial structural schematic diagram of the first embodiment of the X-ray detector of the present application.
  • FIG. 3 is a partial structural schematic diagram of a second embodiment of an X-ray detector of the present application.
  • FIG. 4 is a schematic structural diagram of a third embodiment of an X-ray detector of the present application.
  • FIG. 5 is a schematic structural diagram of a fourth embodiment of the X-ray detector of the present application.
  • Fig. 6 is the X-ray photoluminescence spectra of CsI (pure), CsI (Na) and CsI (Tl).
  • first, second, etc. are for descriptive purposes only, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features.
  • the features defined as “first” and “second” may include at least one of the features either explicitly or implicitly.
  • the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of those skilled in the art to achieve. When the combination of technical solutions conflicts with each other or cannot be realized, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.
  • the present application proposes a semiconductor 80, the semiconductor 80 includes: a photoelectric conversion layer 60, having a uniform porous structure, and filled with germanium particles 92 in the hole; a transparent conductive film 40, located in The light incident side of the photoelectric conversion layer 60.
  • the photoelectric conversion layer 60 is formed of a uniform porous structure filled with germanium particles 92, which is formed of one or more of GeOx, GeNx, SixGeyOz, or SixGeyNz.
  • germanium particles 92 is filled in the hole structure formed by GeOx91.
  • the size of the pores is controlled by different surfactants, thereby controlling the size of the germanium particles 92 filled in the pores; since the fixed-size germanium particles 92 can only absorb specific
  • the wavelength of light enables the photoelectric conversion layer 60 to stably absorb light with a wavelength in a specific range, and the uniform pore structure makes the germanium particles 92 filled therein uniform in size, so the absorption of light wavelength is stable, and the photoelectric conversion is also more Sensitive.
  • the wavelength of light that the photoelectric conversion layer 60 can absorb is related to the ratio of silicon germanium. Both silicon and germanium can perform photoelectric conversion on visible light 94, but germanium does on light. The sensitivity is higher than that of silicon, and it is more inclined to long-wave light. Therefore, the higher the germanium content in the semiconductor, the longer the light wave absorbed by the semiconductor.
  • the photoelectric conversion layer 60 mainly performs photoelectric conversion on red light
  • the photoelectric conversion layer 60 mainly performs photoelectric conversion on violet light and blue light.
  • the 10 layers of cesium iodide scintillator not doped with thallium can effectively absorb X-ray 93 and convert it into near ultraviolet light.
  • pure cesium iodide scintillator 10 can absorb X-ray 93 and convert it to near ultraviolet light with a peak wavelength of about 310 nm
  • sodium-doped cesium iodide scintillator 10 can convert X-ray 93 to a peak Near ultraviolet light with a wavelength of about 420nm.
  • the photoelectric conversion layer 60 can convert pure cesium iodide and sodium-doped cesium iodide by controlling the content of germanium in GeNx and GeOx or the ratio of silicon to germanium in SixGeyNz, SixGeyOzNw, and SixGeyOz. Visible light 94.
  • the transparent conductive film 40 is electrically connected to the photoelectric conversion layer 60, the transparent conductive film 40 is used to apply voltage, light is incident from the transparent conductive film 40 into the photoelectric conversion layer 60, and the photoelectric conversion layer 60 converts electrical signals into optical signals.
  • germanium can absorb light waves with longer wavelengths, and germanium itself is more sensitive to light than silicon, and has more efficient photoelectric conversion performance.
  • the germanium particles 92 are filled in a uniform porous structure and used as a semiconductor
  • the photoelectric conversion layer 60 of 80 enables the semiconductor 80 to stably absorb long light waves.
  • the semiconductor 80 using amorphous silicon as the photoelectric conversion layer 60 it can convert light information with a longer wavelength and is not limited by short-wave light, such as , Red-green light, and the semiconductor 80 using amorphous silicon as the photoelectric conversion layer 60 mainly converts light waves in the blue-green light.
  • the germanium particles 92 are filled in a uniform porous structure, and as the photoelectric conversion layer 60 of the semiconductor 80, it has higher photoelectric conversion performance, can quickly convert optical signals into electrical signals, and the reaction is more sensitive.
  • the X-ray detector has a more sensitive photoelectric conversion performance, and the photoelectric conversion efficiency is also better than that of an X-ray detector using an amorphous silicon diode for photoelectric conversion, and is not subject to Due to the limitation of short wave light, the application is more extensive.
  • the germanium particles 92 are nano germanium.
  • the size of the germanium particles 92 is determined by the size of the holes. The larger the holes, the larger the germanium particles 92 filled in the holes and the longer the light waves absorbed.
  • the uniform pore structure makes the germanium particles 92 filled therein uniform in size, so the absorption of light wavelength is stable and the photoelectric conversion is more sensitive.
  • the semiconductor 80 further includes a P-doped layer 61 and an N-doped layer 62; the P-doped layer 61 is located on the light incident side of the photoelectric conversion layer 60 and between the transparent conductive film 40 and the photoelectric conversion layer Between 60, the N-doped layer 62 is located on the light exit side of the photoelectric conversion layer 60.
  • the semiconductor 80 further includes an insulating medium, and the P-doped layer 61 and the N-doped layer 62 are wrapped in the insulating medium, so that the P-doped layer 61 and the N-doped layer 62 are insulated.
  • the structure formed by the P-doped layer 61, the photoelectric conversion layer 60, and the N-doped layer 62 functions like a capacitor, preventing the loss of electrical signals generated by the photoelectric effect of the photoelectric conversion layer 60, This allows the electrical signal to flow to the signal reading layer 90 to the greatest extent.
  • the signal reading layer 90 is an array substrate composed of thin film transistors (not shown in the figure). The array substrate transmits the read electrical signals to an external imaging device to complete the output of the electrical signals.
  • the semiconductor 80 further includes an insulating medium surrounding the P-doped layer 61 and the N-doped layer 62 to The P-doped layer 61 and the N-doped layer 62 are insulated.
  • the present application also proposes an X-ray detector, including the semiconductor 80 as described above, the X-ray detector further includes a scintillator 10, which is located on the light incident side of the X-ray detector and converts X-rays into visible light,
  • the semiconductor 80 photoelectrically converts the visible light;
  • a thin film transistor which is electrically connected to the semiconductor 80;
  • a light blocking member 30 which is located between the scintillator 10 and the thin film transistor and is active with the thin film transistor
  • the positions of the layer 70 correspond to block the incident light of the active layer 70.
  • the main component of the scintillator 10 is CsI
  • X-rays enter the scintillator 10 from the light incident side of the scintillator 10
  • the scintillator 10 is converted into visible light.
  • the photoelectric conversion layer 60 produces a photoelectric effect and converts the optical signal into an electrical signal. Since the semiconductor 80 is electrically connected to the drain 50 of the thin film transistor, the electrical signal is output through the thin film transistor to realize the photoelectric conversion function of the X-ray detector.
  • the thin film transistor Since the thin film transistor has an active layer 70 capable of converting optical signals into electrical signals, if visible light enters the thin film transistor, the electrical signal transmitted in the thin film transistor will change. Therefore, in order to prevent visible light from entering the thin film transistor, the thin film transistor A light blocking member 30 is provided on the light incident side of the transistor, and the light blocking member 30 blocks the light incident on the active layer 70 of the thin film transistor, so that the thin film transistor transmits only the electrical signal from the photoelectric conversion layer 60 to complete the signal reading function of the semiconductor 80 .
  • the main component of the scintillator 10 may also be pure CsI or sodium-doped cesium iodide, and the X-ray 93 enters the scintillator 10 from the light incident side of the scintillator 10, and the scintillator 10 Converted into visible light 94, after the photosensitive layer 80 is exposed by the visible light 94, the photoelectric conversion layer 60 photoelectrically converts the visible light 94. Since the photosensitive layer 80 is electrically connected to the signal reading layer, the electricity generated by the photoelectric conversion layer 60 after photoelectric conversion The signal is output by the signal reading layer to realize the photoelectric conversion function of the X-ray detector.
  • the signal reading layer is a thin film transistor 90 (Thin film transistor, TFT for short). Since the thin film transistor 90 has an active layer 70 capable of photoelectric conversion, if visible light 94 enters the thin film transistor 90, The source layer 70 will cause the electrical signal transmitted in the thin film transistor 90 to change. Therefore, in order to prevent visible light 94 from entering the thin film transistor 90, a light blocking member 30 is provided on the light incident side of the thin film transistor 90, and the light blocking member 30 blocks the light incident on the thin film transistor The light from the active layer 70 causes the thin film transistor 90 to transmit only the electrical signal from the photoelectric conversion layer 60 to complete the signal reading function of the photosensitive layer 80.
  • TFT Thin film transistor
  • the X-ray detector proposed in this application is greener and will not cause damage to the user's health.
  • Thallium itself is a precious metal with high cost.
  • Sodium metal or pure iodide is used Replacing cesium iodide doped with thallium can greatly reduce the production cost of X-ray detectors and save the safety cost of processing thallium.
  • the position of the semiconductor 80 has two arrangement forms, the first one is: the semiconductor 80 and the light shielding member 30 are vertically stacked between the scintillator 10 and the thin film transistor, and the semiconductor 80 is located on the light shielding member 30
  • the second side is: the semiconductor 80 and the light blocking member 30 are arranged side by side between the scintillator 10 and the thin film transistor.
  • the semiconductor 80 when the semiconductor 80 is located between the scintillator 10 and the light blocking member 30, the semiconductor 80 and the thin film transistor drain 50 are electrically connected by wires, and the electrical signal generated by the photoelectric conversion layer 60 is read by the thin film transistor.
  • This arrangement allows the semiconductor 80 to be exposed to visible light over a large area, is not limited by the thin film transistor, and has high photoelectric conversion efficiency.
  • the arrangement of the semiconductor 80 between the scintillator 10 and the light shield 30 can reduce the irradiation time of the patient under X-rays or reduce the intensity of X-ray irradiation, because the X-ray detector has The high photoelectric conversion efficiency can achieve the same imaging effect, thus reducing the impact of X-rays on the patient.
  • the second arrangement form of the semiconductor 80 namely, the semiconductor 80 and the light blocking member 30 are arranged side by side between the scintillator 10 and the thin film transistor; at this time, the photoelectric conversion layer 60 penetrates the insulation of the thin film transistor
  • the protective layer is electrically connected to the drain 50 of the thin film transistor. Since the photoelectric conversion layer 60 is in direct contact with the drain 50 of the thin film transistor, the electrical signal generated by the photoelectric effect of the photoelectric conversion layer 60 can directly enter the thin film transistor from the drain 50.
  • the photoelectric conversion layer 60 can be provided separately, and the P-doped layer 61 and the N-doped layer 62 are not required.
  • the manufacturing process of the P-doped layer 61 and the N-doped layer 62 is complicated and expensive.
  • the semiconductor 80 and the light-shielding member 30 are arranged side by side between the scintillator 10 and the thin-film transistor can directly save P
  • the doped layer 61 and the N-doped layer 62 greatly reduce the production cost of the X-ray detector and simplify the process flow.
  • the photosensitive layer 80 containing the P-doped layer 61 and the N-doped layer 62 and the light-shielding member 30 may be arranged side by side between the scintillator 10 and the thin film transistor 90. At this time, the photosensitive layer 80 and the thin film transistor 90 Electrically connected by wire
  • the photoelectric conversion layer 60 may not need the P-doped layer 61 and the N-doped layer 62, and independently form the semiconductor 80 with the transparent conductive film 40; they may also include the P-doped layer 61
  • the semiconductor 80 is formed together with the N-doped layer 62, and the visible light from the scintillator 10 is photoelectrically converted.
  • the manufacturing process of the P-doped layer 61 and the N-doped layer 62 is complicated and expensive, and the form of directly eliminating the P-doped layer 61 and the N-doped layer 62 greatly reduces the production cost of the X-ray detector , Simplifying the process.
  • the semiconductor 80 formed by using a uniform porous structure filled with germanium particles 92 as the photoelectric conversion layer has more sensitive photoelectric conversion performance and higher photoelectric conversion efficiency. Therefore, when this embodiment is applied to an X-ray detector, The X-ray detector has more sensitive photoelectric conversion performance, and the photoelectric conversion efficiency is also better than that of an X-ray detector that uses an amorphous silicon diode for photoelectric conversion.
  • the X-ray detector further includes: a protective layer 20 that fills the gap between the signal reading layer 90 and the scintillator 10 to expose the shading member 30 and the light
  • a protective layer 20 that fills the gap between the signal reading layer 90 and the scintillator 10 to expose the shading member 30 and the light
  • the layer 80 and the signal reading layer 90 are isolated from the external environment.
  • the X-ray detector further includes a protective layer 20, which is filled in the signal reading layer 90 and The space between the scintillators 10 isolates the light shielding member 30, the photosensitive layer 80 and the array substrate from the external environment.
  • the protective layer 20 and the insulating layer may be the same substance, such as SiNx, or different substances, such as the insulating layer is SiNx, and the protective layer 20 is SiOx, the insulating layer and the protection Layer 20 is provided separately.
  • the semiconductor 80 including the photoelectric conversion layer 60, the P-doped layer 61, and the N-doped layer 62 can also be disposed between the scintillator 10 and the thin film transistor side by side with the light-shielding member 30.
  • the thin film transistors are electrically connected by wires.
  • the semiconductor 80 of the X-ray detector has a photoelectric conversion layer 60 containing germanium particles 92, the X-ray detector can be used to convert a light wave signal with a longer wavelength, as compared with an amorphous silicon semiconductor to realize the photoelectric conversion function
  • the X-ray detector has the function of converting long-wave optical signals into electrical signals.
  • the present application also proposes a display device including the aforementioned X-ray detector and an imaging device.
  • the X-ray detector is electrically connected to the imaging device.
  • the electrical signal generated by the X-ray detector due to the photoelectric effect forms an image through the imaging device .
  • the semiconductor that functions as a photoelectric converter in the X-ray detector has sensitive and efficient photoelectric conversion performance, and can realize the function of converting a long-wave optical signal into an electrical signal, therefore, under the same imaging effect , Can reduce the X-ray irradiation intensity or irradiation time, reduce the impact on the patient, and can break through the limitations of short-wave light.
  • the photoelectric conversion layer 60 can convert the visible light 94 converted by pure cesium iodide and sodium-doped cesium iodide to achieve
  • the photoelectric conversion function of the X-ray detector enables the imaging device proposed in this application to avoid the damage to the user's health caused by metal thallium, and reduces a large amount of safety investment costs.

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Abstract

本申请提供了一种半导体、X射线探测器及显示设备，所述半导体包括：光电转换层（60），所述光电转换层（60）具有均匀的多孔结构，且孔内填充有锗颗粒（92）；透明导电薄膜（40），位于所述光电转换层（60）的入光侧。

Description

半导体、X射线探测器及显示设备
相关申请：
本申请要求2019-01-11日申请的，申请号201910038170.1，名称为“X射线探测器及显像设备”，以及2019-01-11日申请的，申请号为201910031218.6，名称为“半导体、X射线探测器及显示设备”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本申请涉及探测器领域，特别涉及一种半导体、X射线探测器及显示设备。
 背景技术
X射线探测器广泛应用于医疗仪器上，如，利用X射线进行胸透成像；目前，X射线探测器的光电转换功能主要由非晶硅光电二极管完成，X射线经闪烁体（目前主要为CsI）转换成可见光，再经非晶硅光电二极管将可见光转换成电信号并由薄膜晶体管（Thin film transistor,简称TFT）将电信号输出。
由于非晶硅的结构不够稳定，主要吸收波长较短的光，如蓝光-绿光，而无法吸收更长波长的光，如红光-绿光，以致以非晶硅为光转换层的光电二极管无法转换波长较长的光波信息，因此X射线探测器的功能受限。
 技术解决方案
本申请的主要目的是提供一种半导体，使得非晶硅光电二极管无法吸收波长较长的光波的问题。
为实现上述目的，本发明提出一种半导体，所述半导体包括：
光电转换层，所述光电转换层具有均匀的多孔结构，且孔内填充有锗颗粒；
透明导电薄膜，位于所述光电转换层的入光侧。
可选地，所述锗颗粒为纳米锗。
可选地，所述锗颗粒大小均匀。
可选地，所述多孔结构由氧化锗、氮化锗、包含锗和硅的氧化物以及包含锗和硅的氮化物中的一种或多种形成。
可选地，所述半导体还包括P掺杂层与N掺杂层；所述P掺杂层位于所述光电转换层的入光侧且处于所述透明导电薄膜与所述光电转换层之间，所述N掺杂层位于所述光电转换层的出光侧。
可选地，所述半导体还包括绝缘介质，所述P掺杂层与N掺杂层包裹于所述绝缘介质内，使得P掺杂层与N掺杂层绝缘。
可选地，所述N掺杂层位于所述光电转换层的出光侧，所述半导体还包括绝缘介质，所述P掺杂层与N掺杂层包裹于所述绝缘介质内，使得P掺杂层与N掺杂层绝缘。
本申请还提出一种X射线探测器，所述X射线探测器包括：
半导体，所述半导体包括光电转换层，所述光电转换层具有均匀的多孔结构，且孔内填充有锗颗粒；
信号读取层，位于所述光电转换层的入光侧，所述信号读取层与所述半导体电连接；
闪烁体，所述闪烁体为纯碘化铯层或掺杂钠的碘化铯层，所述闪烁体位于所述半导体的入光侧，所述半导体对所述可见光进行光电转换；
遮光件，位于所述闪烁体与所述信号读取层之间且与所述信号读取层中的有源层的位置对应，以遮挡所述有源层的入射光。
可选地，所述信号读取层为薄膜晶体管，所述半导体穿透所述薄膜晶体管的绝缘保护层与所述薄膜晶体管的漏极电连接。
可选地，所述信号读取层为薄膜晶体管，所述光电转换层不穿透所述薄膜晶体管的绝缘保护层，通过导线与所述薄膜晶体管的漏极电连接。
可选地，所述半导体及遮光件并排设置于闪烁体与所述信号读取层之间。
可选地，所述半导体与所述遮光件垂直堆叠于所述闪烁体与信号读取层之间，且所述半导体位于所述遮光件的入光侧。
可选地，所述半导体与所述信号读取层通过导线电连接。
可选地，所述X射线探测器还包括：保护层，所述保护层填充于所述信号读取层与所述闪烁体之间的空隙，以将所述遮光件、半导体及信号读取层与外界环境隔离。
可选地，所述保护层由硅的氧化物或硅的氮化物构成。
可选地，所述闪烁体包括碘化铯。
本申请还提出一种显示设备，所述显示设备包括：
半导体，所述半导体包括光电转换层，所述光电转换层具有均匀的多孔结构，且孔内填充有锗颗粒；
信号读取层，位于所述光电转换层的入光侧，所述信号读取层与所述半导体电连接；
闪烁体，所述闪烁体为纯碘化铯层或掺杂钠的碘化铯层，所述闪烁体位于所述半导体的入光侧，所述半导体对所述可见光进行光电转换；
遮光件，位于所述闪烁体与所述信号读取层之间且与所述信号读取层中的有源层的位置对应，以遮挡所述有源层的入射光；
所述显示设备还包括成像装置，所述成像装置与所述信号读取层电连接。
本申请技术方案通过将半导体中起光电转换作用的光电转换层更换为填充有锗颗粒的多孔结构，并在光电转换层的入光侧设置透明导电薄膜，相对于硅，锗对能够吸收波长更长的光波，将锗颗粒填充于均匀的多孔结构，并作为半导体的光转换层，使得半导体能够稳定地吸收长光波，能够转换波长较长的光波信息，突破了半导体只能将短波光的光信号转换成电信号的限制。
 附图说明
为了更清楚地说明本申请实施例或示例性技术中的技术方案，下面将对实施例或示例性技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本申请半导体的一实施例的结构示意图；
图2为本申请X射线探测器的第一实施例的部分结构示意图；
图3为本申请X射线探测器的第二实施例的部分结构示意图；
图4为本申请X射线探测器的第三实施例结构示意图；
图5为本申请X射线探测器的第四实施例结构示意图；
图6为CsI(纯)、CsI(Na)以及CsI(Tl)的X射线光致发光谱。
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明，本申请实施例中所有方向性指示（诸如上、下、左、右、前、后……）仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，在本申请中涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
请一并参照图1-6，本申请提出了一种半导体80，所述半导体80包括：光电转换层60，具有均匀的多孔结构，且孔内填充有锗颗粒92；透明导电薄膜40，位于所述光电转换层60的入光侧。
在本实施例中，光电转换层60由填充有锗颗粒92的均匀多孔结构形成，所述均匀的多孔结构由GeOx、GeNx、SixGeyOz或SixGeyNz中的一种或多种形成，图1为锗颗粒92填充于GeOx91形成的孔结构中。在填充有锗颗粒92的均匀多孔结构成膜时，通过不同的界面活性剂来控制孔的大小，从而控制填充于孔中的锗颗粒92的大小；由于固定尺寸的锗颗粒92只能吸收特定波长的光，使得光电转换层60能够稳定地吸收波长在特定范围内的光，而均匀的孔结构使得填充于其内的锗颗粒92大小均匀，因此对光波长的吸收稳定，光电转换也更加灵敏。而在同时含有硅与锗的半导体，如SixGeyNz、SixGeyOzNw及SixGeyOz，光电转换层60所能吸收的光波长与硅锗的比例有关，硅与锗均可对可见光94进行光电转换，但锗对光的灵敏性比硅高，且更偏向于长波光，因此，半导体中锗的含量越高，半导体吸收的光波也更长。当锗的含量大于硅含量的两倍时，光电转换层60主要对红光进行光电转换，当硅的含量大于锗含量的3倍时，光电转换层60主要对紫光及蓝光进行光电转换。不掺杂铊的碘化铯闪烁体10层可以有效地吸收X射线93并将其转化成近紫外光。例如，如图6所示，纯碘化铯闪烁体10可吸收X射线93并将其转化为峰值波长约310nm的近紫外光，掺钠碘化铯闪烁体10可将X射线93转化成峰值波长约420nm的近紫外光。
在本实施例中，可通过控制GeNx及GeOx中锗的含量或控制SixGeyNz、SixGeyOzNw及SixGeyOz中硅与锗的比例，使光电转换层60能够转换纯碘化铯及掺钠碘化铯所转换的可见光94。
其中，透明导电薄膜40与光电转换层60电连接，透明导电薄膜40用于施加电压，光从透明导电薄膜40射入光电转换层60，由光电转换层60将电信号转换成光信号。
相较于硅，锗对能够吸收波长更长的光波，且，锗本身对光的敏感性比硅高，具有更高效的光电转换性能，将锗颗粒92填充于均匀的多孔结构，并作为半导体80的光电转换层60，使得半导体80能够稳定地吸收长光波，相较于以非晶硅作为光电转换层60的半导体80，能够转换波长较长的光波信息，不受短波光的限制，如，红光-绿光，而以非晶硅作为光电转换层60的半导体80主要转换处于蓝光-绿光内的光波。并且，将锗颗粒92填充于均匀的多孔结构，并作为半导体80的光电转换层60，具有更高的光电转换性能，能够快速将光信号转换成电信号，反应更为灵敏。
因此，将本实施例应用于X射线探测器时，X射线探测器具有更加灵敏的光电转换性能，且光电转换效率也优于利用非晶硅二极管进行光电转换的X射线探测器，并且不受短波光的限制，应用场合更加广泛。
作为一种实施例，所述锗颗粒92为纳米锗。锗颗粒92的尺寸由孔的大小决定，孔越大，填充于孔中的锗颗粒92越大，吸收的光波越长。均匀的孔结构使得填充于其内的锗颗粒92大小均匀，因此对光波长的吸收稳定，光电转换也更加灵敏。
所述半导体80还包括P掺杂层61与N掺杂层62；所述P掺杂层61位于所述光电转换层60的入光侧且处于所述透明导电薄膜40与所述光电转换层60之间，所述N掺杂层62位于所述光电转换层60的出光侧。所述半导体80还包括绝缘介质，所述P掺杂层61与N掺杂层62包裹于所述绝缘介质内，使得P掺杂层61与N掺杂层62绝缘。
当半导体80与信号读取层90连接时，P掺杂层61、光电转换层60及N掺杂层62形成的结构其作用类似于电容，防止光电转换层60光电效应产生的电信号流失，使得所述电信号能够最大程度地流向信号读取层90。在本实施例中，所述信号读取层90为薄膜晶体管（图中未标示）组成的阵列基板，阵列基板将读取的电信号传送至外接显像设备，完成电信号的输出。
为了防止在制造的过程中P掺杂层61与N掺杂层62通电，造成制作失败，所述半导体80还包括包绕所述P掺杂层61与N掺杂层62的绝缘介质，以使所述P掺杂层61与N掺杂层62绝缘。
本申请还提出一种X射线探测器，包括如上所述的半导体80，所述X射线探测器还包括闪烁体10，位于所述X射线探测器的入光侧并将X射线转换成可见光，所述半导体80对所述可见光进行光电转换；薄膜晶体管，所述薄膜晶体管与所述半导体80电连接；遮光件30，位于所述闪烁体10与薄膜晶体管之间且与所述薄膜晶体管有源层70的位置对应，以遮挡所述有源层70的入射光。
在本实施例中，闪烁体10的主要成份为CsI，X射线从闪烁体10的入光侧进入闪烁体10，由闪烁体10转换为可见光，半导体80经所述可见光爆光后，光电转换层60产生光电效应，将光信号转换为电信号，由于半导体80与薄膜晶体管的漏极50电连接，所述电信号经薄膜晶体管输出，实现了X射线探测器的光电转换功能。
由于薄膜晶体管内具有一能够将光信号转换成电信号的有源层70，若有可见光进入薄膜晶体管，会导致薄膜晶体管内传输的电信号发生变化，因此，为了防止可见光进入薄膜晶体管，在薄膜晶体管的入光侧设置有遮光件30，遮光件30挡住射向薄膜晶体管有源层70的光线，使得薄膜晶体管只传输来自于光电转换层60的电信号，完成对半导体80的信号读取功能。
或者，如图4、5所示，闪烁体10的主要成份也可以为纯CsI或掺杂钠的碘化铯，X射线93从闪烁体10的入光侧进入闪烁体10，由闪烁体10转换为可见光94，感光层80经所述可见光94曝光后，光电转换层60对可见光94进行光电转换，由于感光层80与信号读取层电连接，光电转换层60进行光电转换后生成的电信号由信号读取层将电信号输出，实现了X射线探测器的光电转换功能。在本实施例中，信号读取层为薄膜晶体管90（Thin film transistor,简称TFT），由于薄膜晶体管90内具有一可进行光电转换的有源层70，若有可见光94进入薄膜晶体管90的有源层70，会导致薄膜晶体管90内传输的电信号发生变化，因此，为了防止可见光94进入薄膜晶体管90，在薄膜晶体管90的入光侧设置有遮光件30，遮光件30挡住射向薄膜晶体管90有源层70的光线，使得薄膜晶体管90只传输来自于光电转换层60的电信号，完成对感光层80的信号读取功能。由于不存在剧毒的金属铊及铊的化合物，本申请提出的X射线探测器更加绿色，不会对用户的健康造成损害，而铊本身为贵重金属，成本高，用金属钠或纯碘化铯替代掺杂铊的碘化铯能够大大降低X射线探测器的生产成本，并能够节省处理铊的安全成本。
半导体80的位置具有两种设置形式，第一种为：所述半导体80与所述遮光件30垂直堆叠于所述闪烁体10与薄膜晶体管之间，且所述半导体80位于所述遮光件30的入光侧；第二种为：半导体80及遮光件30并排设置于闪烁体10与所述薄膜晶体管之间。
如图2所示，当半导体80位于闪烁体10与遮光件30之间时，半导体80与薄膜晶体管漏极50之间通过导线电连接，光电转换层60产生的电信号通过薄膜晶体管读取。这种设置形式使得半导体80能够大面积地接受可见光照射，不受薄膜晶体管的限制，具有很高的光电转换效率。当X射线探测器应用于显示设备时，半导体80位于闪烁体10与遮光件30之间的设置形式可以减少病人在X射线下的照射时间或降低X射线的照射强度，由于X射线探测器具有很高的光电转换效率，可以达到同样的成像效果，因此降低了X射线对病人的影响。
如图3所示，半导体80的第二种设置形式：即，半导体80及遮光件30并排设置于闪烁体10与所述薄膜晶体管之间；此时，光电转换层60穿透薄膜晶体管的绝缘保护层与所述薄膜晶体管的漏极50电连接，由于光电转换层60与薄膜晶体管的漏极50直接接触，光电转换层60光电效应产生的电信号可以直接从漏极50进入薄膜晶体管，因此，光电转换层60可以单独设置，不需要P掺杂层61与N掺杂层62。在实际生产中，P掺杂层61与N掺杂层62的制作流程复杂，价格昂贵，半导体80及遮光件30并排设置于闪烁体10与所述薄膜晶体管之间的形式可以直接省去P掺杂层61与N掺杂层62，大大降低了X射线探测器的生产成本，简化了工艺流程。或者，也可将含有P掺杂层61与N掺杂层62的感光层80与遮光件30并排设置于闪烁体10及薄膜晶体管90之间，此时，感光层80与薄膜晶体管90之间通过导线电连接
在半导体80的上述两种设置形式中，光电转换层60均可不需要P掺杂层61与N掺杂层62，独立与透明导电薄膜40形成半导体80；也可均包含有P掺杂层61与N掺杂层62共同形成半导体80，对来自闪烁体10的可见光进行光电转换。在实际生产中，P掺杂层61与N掺杂层62的制作流程复杂，价格昂贵，直接省去P掺杂层61与N掺杂层62的形式大大降低了X射线探测器的生产成本，简化了工艺流程。
利用填充有锗颗粒92的均匀多孔结构形成的半导体80作为光电转换层的半导体80具有更加灵敏的光电转换性能，且光电转换效率更高，因此，将本实施例应用于X射线探测器时，X射线探测器具有更加灵敏的光电转换性能，且光电转换效率也优于利用非晶硅二极管进行光电转换的X射线探测器。
可选地，所述X射线探测器还包括：保护层20，所述保护层20填充于所述信号读取层90与所述闪烁体10之间的空隙，将所述遮光件30、感光层80及信号读取层90与外界环境隔离。
为了防止电信号流失，X射线探测器的各元件需要严格地与外界环境隔绝，因此，所述X射线探测器还包括保护层20，所述保护层20填充于所述信号读取层90与所述闪烁体10之间的空隙，以将所述遮光件30、感光层80及阵列基板与外界环境隔离。
在一实施例中，所述保护层20与所述绝缘层可为同一种物质，如SiNx，也可为不同物质，如绝缘层为SiNx，而保护层20为SiOx，此时绝缘层与保护层20分开设置。
可以理解的，包括有光电转换层60、P掺杂层61及N掺杂层62的半导体80，亦可与遮光件30并排设置于闪烁体10及薄膜晶体管之间，此时，半导体80与薄膜晶体管通过导线电连接。
由于所述X射线探测器的半导体80具有包含锗颗粒92的光电转换层60，所述X射线探测器可以用于转换波长较长的光波信号，相较于以非晶硅半导体实现光电转换功能的X射线探测器，能够具备将长波的光信号转换为电信号的功能。
本申请还提出一种显示设备，该显示设备包括前述X射线探测器及成像装置，所述X射线探测器与成像装置电连接，X射线探测器因光电效应产生的电信号经成像装置形成影像。
在本实施例中，由于X射线探测器内起光电转换功能的半导体具有灵敏且高效的光电转换性能，并能实现将长波的光信号转换为电信号的功能，因此，在同样的成像效果下，可以降低X射线的照射强度或照射时间，减少对病人的影响，并能够突破短波光的限制。同时，能够通过控制GeNx及GeOx中锗的含量或控制SixGeyNz、SixGeyOzNw及SixGeyOz中硅与锗的比例，使光电转换层60能够转换纯碘化铯及掺钠碘化铯所转换的可见光94，实现X射线探测器的光电转换功能，使得本申请提出的显像设备能够避免金属铊对使用者的健康损害，并减少了大量的安全投入成本。
以上所述仅为本申请的可选实施例，并非因此限制本申请的专利范围，凡是在本申请的构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。

Claims (17)

  1. 一种半导体，其中，所述半导体包括：
    光电转换层，所述光电转换层具有均匀的多孔结构，且孔内填充有锗颗粒；
    透明导电薄膜，位于所述光电转换层的入光侧。
  2. 根据权利要求1所述的半导体，其中，所述锗颗粒为纳米锗。
  3. 根据权利要求2所述的半导体，其中，所述锗颗粒大小均匀。
  4. 根据权利要求1所述的半导体，其中，所述多孔结构由氧化锗、氮化锗、包含锗和硅的氧化物以及包含锗和硅的氮化物中的一种或多种形成。
  5. 根据权利要求1所述的半导体，其中，所述半导体还包括P掺杂层与N掺杂层；所述P掺杂层位于所述光电转换层的入光侧且处于所述透明导电薄膜与所述光电转换层之间，所述N掺杂层位于所述光电转换层的出光侧。
  6. 根据权利要求5所述的半导体，其中，所述半导体还包括绝缘介质，所述P掺杂层与N掺杂层包裹于所述绝缘介质内，使得P掺杂层与N掺杂层绝缘。
  7. 根据权利要求5所述的半导体，其中，所述N掺杂层位于所述光电转换层的出光侧，所述半导体还包括绝缘介质，所述P掺杂层与N掺杂层包裹于所述绝缘介质内，使得P掺杂层与N掺杂层绝缘。
  8. 一种X射线探测器，其中，所述X射线探测器包括：
    半导体，所述半导体包括光电转换层，所述光电转换层具有均匀的多孔结构，且孔内填充有锗颗粒；
    信号读取层，位于所述光电转换层的入光侧，所述信号读取层与所述半导体电连接；
    闪烁体，所述闪烁体为纯碘化铯层或掺杂钠的碘化铯层，所述闪烁体位于所述半导体的入光侧，所述半导体对所述可见光进行光电转换；
    遮光件，位于所述闪烁体与所述信号读取层之间且与所述信号读取层中的有源层的位置对应，以遮挡所述有源层的入射光。
  9. 根据权利要求8所述的X射线探测器，其中，所述信号读取层为薄膜晶体管，所述半导体穿透所述薄膜晶体管的绝缘保护层与所述薄膜晶体管的漏极电连接。
  10. 根据权利要求8所述的X射线探测器，其中，所述信号读取层为薄膜晶体管，所述光电转换层不穿透所述薄膜晶体管的绝缘保护层，通过导线与所述薄膜晶体管的漏极电连接。
  11. 根据权利要求8所述的X射线探测器，其中，所述半导体及遮光件并排设置于闪烁体与所述信号读取层之间。
  12. 根据权利要求8所述的X射线探测器，其中，所述半导体与所述遮光件垂直堆叠于所述闪烁体与信号读取层之间，且所述半导体位于所述遮光件的入光侧。
  13. 根据权利要求8所述的X射线探测器，其中，所述半导体与所述信号读取层通过导线电连接。
  14. 根据权利要求8所述的X射线探测器，其中，所述X射线探测器还包括：保护层，所述保护层填充于所述信号读取层与所述闪烁体之间的空隙，以将所述遮光件、半导体及信号读取层与外界环境隔离。
  15. 根据权利要求14所述的X射线探测器，其中，所述保护层由硅的氧化物或硅的氮化物构成。
  16. 根据权利要求8所述的X射线探测器，其中，所述闪烁体包括碘化铯。
  17. 一种显示设备，其中，所述显示设备包括：
    半导体，所述半导体包括光电转换层，所述光电转换层具有均匀的多孔结构，且孔内填充有锗颗粒；
    信号读取层，位于所述光电转换层的入光侧，所述信号读取层与所述半导体电连接；
    闪烁体，所述闪烁体为纯碘化铯层或掺杂钠的碘化铯层，所述闪烁体位于所述半导体的入光侧，所述半导体对所述可见光进行光电转换；
    遮光件，位于所述闪烁体与所述信号读取层之间且与所述信号读取层中的有源层的位置对应，以遮挡所述有源层的入射光；
    所述显示设备还包括成像装置，所述成像装置与所述信号读取层电连接。
PCT/CN2019/129311 2019-01-11 2019-12-27 半导体、x射线探测器及显示设备 Ceased WO2020143485A1 (zh)

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