WO2020143485A1

WO2020143485A1 - Semiconductor, x-ray detector and display device

Info

Publication number: WO2020143485A1
Application number: PCT/CN2019/129311
Authority: WO
Inventors: 卓恩宗
Original assignee: 惠科股份有限公司
Priority date: 2019-01-11
Filing date: 2019-12-27
Publication date: 2020-07-16

Abstract

Provided in the present application are a semiconductor, an X-ray detector and a display device. The semiconductor comprises: a photoelectric conversion layer (60), which is provided with a homogeneous porous structure, the pores being filled with germanium particles (92); and a transparent conductive film (40), which is located at the light entry side of the photoelectric conversion layer (60).

Description

Semiconductor, X-ray detector and display equipment

Related applications:

This application requires the application number 2019-01-11, the application number 201910038170.1, the name is "X-ray detector and imaging equipment", and the application date 2019-01-11, the application number is 201910031218.6, the name is "semiconductor, X The priority of the Chinese patent application for "ray detector and display equipment" is hereby incorporated by reference in its entirety.

Technical field

The present application relates to the field of detectors, in particular to a semiconductor, X-ray detector and display equipment.

Background technique

X-ray detectors are widely used in medical instruments, such as chest X-ray imaging using X-rays; at present, the photoelectric conversion function of X-ray detectors is mainly completed by amorphous silicon photodiodes, and X-rays pass through scintillators (currently mainly CsI ) Converted into visible light, and then converted into electrical signal by amorphous silicon photodiode and outputted by thin film transistor (TFT).

Since the structure of amorphous silicon is not stable enough, it mainly absorbs light with shorter wavelengths, such as blue-green light, but cannot absorb light with longer wavelengths, such as red-green light, so that the photoelectricity using amorphous silicon as the light conversion layer Diodes cannot convert light wave information with longer wavelengths, so the function of X-ray detectors is limited.

Technical solution

The main purpose of the present application is to provide a semiconductor that prevents amorphous silicon photodiodes from absorbing light waves with longer wavelengths.

To achieve the above object, the present invention provides a semiconductor, the semiconductor includes:

A photoelectric conversion layer, the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;

The transparent conductive film is located on the light incident side of the photoelectric conversion layer.

Optionally, the germanium particles are nano germanium.

Optionally, the germanium particles are uniform in size.

Optionally, the porous structure is formed of one or more of germanium oxide, germanium nitride, an oxide containing germanium and silicon, and a nitride containing germanium and silicon.

Optionally, the semiconductor further includes a P-doped layer and an N-doped layer; the P-doped layer is located on the light incident side of the photoelectric conversion layer and is between the transparent conductive film and the photoelectric conversion layer The N-doped layer is located on the light exit side of the photoelectric conversion layer.

Optionally, the semiconductor further includes an insulating medium, and the P-doped layer and the N-doped layer are wrapped in the insulating medium, so that the P-doped layer is insulated from the N-doped layer.

Optionally, the N-doped layer is located on the light exit side of the photoelectric conversion layer, the semiconductor further includes an insulating medium, and the P-doped layer and the N-doped layer are wrapped in the insulating medium, so that P doping The impurity layer is insulated from the N-doped layer.

This application also proposes an X-ray detector. The X-ray detector includes:

A semiconductor, the semiconductor includes a photoelectric conversion layer, the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;

A signal reading layer is located on the light incident side of the photoelectric conversion layer, and the signal reading layer is electrically connected to the semiconductor;

A scintillator, the scintillator is a pure cesium iodide layer or a sodium-doped cesium iodide layer, the scintillator is located on the light incident side of the semiconductor, and the semiconductor performs photoelectric conversion on the visible light;

The light blocking member is located between the scintillator and the signal reading layer and corresponds to the position of the active layer in the signal reading layer to block the incident light of the active layer.

Optionally, the signal reading layer is a thin film transistor, and the semiconductor is electrically connected to the drain of the thin film transistor through the insulating protective layer of the thin film transistor.

Optionally, the signal reading layer is a thin film transistor, the photoelectric conversion layer does not penetrate the insulating protective layer of the thin film transistor, and is electrically connected to the drain of the thin film transistor through a wire.

Optionally, the semiconductor and the light shield are arranged side by side between the scintillator and the signal reading layer.

Optionally, the semiconductor and the light shield are vertically stacked between the scintillator and the signal reading layer, and the semiconductor is located on the light incident side of the light shield.

Optionally, the semiconductor and the signal reading layer are electrically connected by wires.

Optionally, the X-ray detector further includes a protective layer, which is filled in the gap between the signal reading layer and the scintillator to read the shading member, semiconductor, and signal The layer is isolated from the outside environment.

Optionally, the protective layer is composed of silicon oxide or silicon nitride.

Optionally, the scintillator includes cesium iodide.

This application also proposes a display device, which includes:

A light blocking member, located between the scintillator and the signal reading layer and corresponding to the position of the active layer in the signal reading layer, to block the incident light of the active layer;

The display device further includes an imaging device electrically connected to the signal reading layer.

The technical solution of the present application replaces the photoelectric conversion layer in the semiconductor with a porous structure filled with germanium particles, and provides a transparent conductive film on the light incident side of the photoelectric conversion layer. Compared with silicon, germanium can absorb more wavelengths Long light waves fill germanium particles into a uniform porous structure and act as a light conversion layer for semiconductors, enabling semiconductors to absorb long light waves stably and convert light information with longer wavelengths. Limitation of the conversion of signals into electrical signals.

BRIEF DESCRIPTION

In order to more clearly explain the technical solutions in the embodiments or exemplary technologies of the present application, the drawings required in the description of the embodiments or exemplary technologies will be briefly introduced below. Obviously, the drawings in the following description are only These are some embodiments of the present application. For those of ordinary skill in the art, without paying any creative work, other drawings can be obtained according to the structures shown in these drawings.

FIG. 1 is a schematic structural diagram of an embodiment of a semiconductor of the present application;

2 is a partial structural schematic diagram of the first embodiment of the X-ray detector of the present application;

3 is a partial structural schematic diagram of a second embodiment of an X-ray detector of the present application;

4 is a schematic structural diagram of a third embodiment of an X-ray detector of the present application;

5 is a schematic structural diagram of a fourth embodiment of the X-ray detector of the present application;

Fig. 6 is the X-ray photoluminescence spectra of CsI (pure), CsI (Na) and CsI (Tl).

The implementation, functional characteristics and advantages of the present application will be further described in conjunction with the embodiments and with reference to the drawings.

Embodiments of the invention

The technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the scope of protection of the present application.

It should be noted that all directional indicators (such as up, down, left, right, front, back...) in the embodiments of the present application are only used to explain the inter-components in a certain posture (as shown in the drawings) With respect to the relative positional relationship, movement conditions, etc., if the specific posture changes, the directional indication also changes accordingly.

In addition, the descriptions related to "first", "second", etc. in this application are for descriptive purposes only, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" may include at least one of the features either explicitly or implicitly. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of those skilled in the art to achieve. When the combination of technical solutions conflicts with each other or cannot be realized, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.

Please refer to FIGS. 1-6 together, the present application proposes a semiconductor 80, the semiconductor 80 includes: a photoelectric conversion layer 60, having a uniform porous structure, and filled with germanium particles 92 in the hole; a transparent conductive film 40, located in The light incident side of the photoelectric conversion layer 60.

In this embodiment, the photoelectric conversion layer 60 is formed of a uniform porous structure filled with germanium particles 92, which is formed of one or more of GeOx, GeNx, SixGeyOz, or SixGeyNz. FIG. 1 shows germanium particles 92 is filled in the hole structure formed by GeOx91. When a uniform porous structure filled with germanium particles 92 is formed into a film, the size of the pores is controlled by different surfactants, thereby controlling the size of the germanium particles 92 filled in the pores; since the fixed-size germanium particles 92 can only absorb specific The wavelength of light enables the photoelectric conversion layer 60 to stably absorb light with a wavelength in a specific range, and the uniform pore structure makes the germanium particles 92 filled therein uniform in size, so the absorption of light wavelength is stable, and the photoelectric conversion is also more Sensitive. In semiconductors containing both silicon and germanium, such as SixGeyNz, SixGeyOzNw, and SixGeyOz, the wavelength of light that the photoelectric conversion layer 60 can absorb is related to the ratio of silicon germanium. Both silicon and germanium can perform photoelectric conversion on visible light 94, but germanium does on light. The sensitivity is higher than that of silicon, and it is more inclined to long-wave light. Therefore, the higher the germanium content in the semiconductor, the longer the light wave absorbed by the semiconductor. When the germanium content is greater than twice the silicon content, the photoelectric conversion layer 60 mainly performs photoelectric conversion on red light, and when the silicon content is greater than 3 times the germanium content, the photoelectric conversion layer 60 mainly performs photoelectric conversion on violet light and blue light. The 10 layers of cesium iodide scintillator not doped with thallium can effectively absorb X-ray 93 and convert it into near ultraviolet light. For example, as shown in FIG. 6, pure cesium iodide scintillator 10 can absorb X-ray 93 and convert it to near ultraviolet light with a peak wavelength of about 310 nm, and sodium-doped cesium iodide scintillator 10 can convert X-ray 93 to a peak Near ultraviolet light with a wavelength of about 420nm.

In this embodiment, the photoelectric conversion layer 60 can convert pure cesium iodide and sodium-doped cesium iodide by controlling the content of germanium in GeNx and GeOx or the ratio of silicon to germanium in SixGeyNz, SixGeyOzNw, and SixGeyOz. Visible light 94.

Among them, the transparent conductive film 40 is electrically connected to the photoelectric conversion layer 60, the transparent conductive film 40 is used to apply voltage, light is incident from the transparent conductive film 40 into the photoelectric conversion layer 60, and the photoelectric conversion layer 60 converts electrical signals into optical signals.

Compared with silicon, germanium can absorb light waves with longer wavelengths, and germanium itself is more sensitive to light than silicon, and has more efficient photoelectric conversion performance. The germanium particles 92 are filled in a uniform porous structure and used as a semiconductor The photoelectric conversion layer 60 of 80 enables the semiconductor 80 to stably absorb long light waves. Compared to the semiconductor 80 using amorphous silicon as the photoelectric conversion layer 60, it can convert light information with a longer wavelength and is not limited by short-wave light, such as , Red-green light, and the semiconductor 80 using amorphous silicon as the photoelectric conversion layer 60 mainly converts light waves in the blue-green light. Moreover, the germanium particles 92 are filled in a uniform porous structure, and as the photoelectric conversion layer 60 of the semiconductor 80, it has higher photoelectric conversion performance, can quickly convert optical signals into electrical signals, and the reaction is more sensitive.

Therefore, when this embodiment is applied to an X-ray detector, the X-ray detector has a more sensitive photoelectric conversion performance, and the photoelectric conversion efficiency is also better than that of an X-ray detector using an amorphous silicon diode for photoelectric conversion, and is not subject to Due to the limitation of short wave light, the application is more extensive.

As an example, the germanium particles 92 are nano germanium. The size of the germanium particles 92 is determined by the size of the holes. The larger the holes, the larger the germanium particles 92 filled in the holes and the longer the light waves absorbed. The uniform pore structure makes the germanium particles 92 filled therein uniform in size, so the absorption of light wavelength is stable and the photoelectric conversion is more sensitive.

The semiconductor 80 further includes a P-doped layer 61 and an N-doped layer 62; the P-doped layer 61 is located on the light incident side of the photoelectric conversion layer 60 and between the transparent conductive film 40 and the photoelectric conversion layer Between 60, the N-doped layer 62 is located on the light exit side of the photoelectric conversion layer 60. The semiconductor 80 further includes an insulating medium, and the P-doped layer 61 and the N-doped layer 62 are wrapped in the insulating medium, so that the P-doped layer 61 and the N-doped layer 62 are insulated.

When the semiconductor 80 is connected to the signal reading layer 90, the structure formed by the P-doped layer 61, the photoelectric conversion layer 60, and the N-doped layer 62 functions like a capacitor, preventing the loss of electrical signals generated by the photoelectric effect of the photoelectric conversion layer 60, This allows the electrical signal to flow to the signal reading layer 90 to the greatest extent. In this embodiment, the signal reading layer 90 is an array substrate composed of thin film transistors (not shown in the figure). The array substrate transmits the read electrical signals to an external imaging device to complete the output of the electrical signals.

In order to prevent the P-doped layer 61 and the N-doped layer 62 from being energized during the manufacturing process, resulting in manufacturing failure, the semiconductor 80 further includes an insulating medium surrounding the P-doped layer 61 and the N-doped layer 62 to The P-doped layer 61 and the N-doped layer 62 are insulated.

The present application also proposes an X-ray detector, including the semiconductor 80 as described above, the X-ray detector further includes a scintillator 10, which is located on the light incident side of the X-ray detector and converts X-rays into visible light, The semiconductor 80 photoelectrically converts the visible light; a thin film transistor, which is electrically connected to the semiconductor 80; a light blocking member 30, which is located between the scintillator 10 and the thin film transistor and is active with the thin film transistor The positions of the layer 70 correspond to block the incident light of the active layer 70.

In this embodiment, the main component of the scintillator 10 is CsI, X-rays enter the scintillator 10 from the light incident side of the scintillator 10, and the scintillator 10 is converted into visible light. After the semiconductor 80 is exploded by the visible light, the photoelectric conversion layer 60 produces a photoelectric effect and converts the optical signal into an electrical signal. Since the semiconductor 80 is electrically connected to the drain 50 of the thin film transistor, the electrical signal is output through the thin film transistor to realize the photoelectric conversion function of the X-ray detector.

Since the thin film transistor has an active layer 70 capable of converting optical signals into electrical signals, if visible light enters the thin film transistor, the electrical signal transmitted in the thin film transistor will change. Therefore, in order to prevent visible light from entering the thin film transistor, the thin film transistor A light blocking member 30 is provided on the light incident side of the transistor, and the light blocking member 30 blocks the light incident on the active layer 70 of the thin film transistor, so that the thin film transistor transmits only the electrical signal from the photoelectric conversion layer 60 to complete the signal reading function of the semiconductor 80 .

Alternatively, as shown in FIGS. 4 and 5, the main component of the scintillator 10 may also be pure CsI or sodium-doped cesium iodide, and the X-ray 93 enters the scintillator 10 from the light incident side of the scintillator 10, and the scintillator 10 Converted into visible light 94, after the photosensitive layer 80 is exposed by the visible light 94, the photoelectric conversion layer 60 photoelectrically converts the visible light 94. Since the photosensitive layer 80 is electrically connected to the signal reading layer, the electricity generated by the photoelectric conversion layer 60 after photoelectric conversion The signal is output by the signal reading layer to realize the photoelectric conversion function of the X-ray detector. In this embodiment, the signal reading layer is a thin film transistor 90 (Thin film transistor, TFT for short). Since the thin film transistor 90 has an active layer 70 capable of photoelectric conversion, if visible light 94 enters the thin film transistor 90, The source layer 70 will cause the electrical signal transmitted in the thin film transistor 90 to change. Therefore, in order to prevent visible light 94 from entering the thin film transistor 90, a light blocking member 30 is provided on the light incident side of the thin film transistor 90, and the light blocking member 30 blocks the light incident on the thin film transistor The light from the active layer 70 causes the thin film transistor 90 to transmit only the electrical signal from the photoelectric conversion layer 60 to complete the signal reading function of the photosensitive layer 80. Because there is no highly toxic metal thallium and thallium compounds, the X-ray detector proposed in this application is greener and will not cause damage to the user's health. Thallium itself is a precious metal with high cost. Sodium metal or pure iodide is used Replacing cesium iodide doped with thallium can greatly reduce the production cost of X-ray detectors and save the safety cost of processing thallium.

The position of the semiconductor 80 has two arrangement forms, the first one is: the semiconductor 80 and the light shielding member 30 are vertically stacked between the scintillator 10 and the thin film transistor, and the semiconductor 80 is located on the light shielding member 30 The second side is: the semiconductor 80 and the light blocking member 30 are arranged side by side between the scintillator 10 and the thin film transistor.

As shown in FIG. 2, when the semiconductor 80 is located between the scintillator 10 and the light blocking member 30, the semiconductor 80 and the thin film transistor drain 50 are electrically connected by wires, and the electrical signal generated by the photoelectric conversion layer 60 is read by the thin film transistor. This arrangement allows the semiconductor 80 to be exposed to visible light over a large area, is not limited by the thin film transistor, and has high photoelectric conversion efficiency. When the X-ray detector is applied to a display device, the arrangement of the semiconductor 80 between the scintillator 10 and the light shield 30 can reduce the irradiation time of the patient under X-rays or reduce the intensity of X-ray irradiation, because the X-ray detector has The high photoelectric conversion efficiency can achieve the same imaging effect, thus reducing the impact of X-rays on the patient.

As shown in FIG. 3, the second arrangement form of the semiconductor 80: namely, the semiconductor 80 and the light blocking member 30 are arranged side by side between the scintillator 10 and the thin film transistor; at this time, the photoelectric conversion layer 60 penetrates the insulation of the thin film transistor The protective layer is electrically connected to the drain 50 of the thin film transistor. Since the photoelectric conversion layer 60 is in direct contact with the drain 50 of the thin film transistor, the electrical signal generated by the photoelectric effect of the photoelectric conversion layer 60 can directly enter the thin film transistor from the drain 50. The photoelectric conversion layer 60 can be provided separately, and the P-doped layer 61 and the N-doped layer 62 are not required. In actual production, the manufacturing process of the P-doped layer 61 and the N-doped layer 62 is complicated and expensive. The semiconductor 80 and the light-shielding member 30 are arranged side by side between the scintillator 10 and the thin-film transistor can directly save P The doped layer 61 and the N-doped layer 62 greatly reduce the production cost of the X-ray detector and simplify the process flow. Alternatively, the photosensitive layer 80 containing the P-doped layer 61 and the N-doped layer 62 and the light-shielding member 30 may be arranged side by side between the scintillator 10 and the thin film transistor 90. At this time, the photosensitive layer 80 and the thin film transistor 90 Electrically connected by wire

In the above two arrangement forms of the semiconductor 80, the photoelectric conversion layer 60 may not need the P-doped layer 61 and the N-doped layer 62, and independently form the semiconductor 80 with the transparent conductive film 40; they may also include the P-doped layer 61 The semiconductor 80 is formed together with the N-doped layer 62, and the visible light from the scintillator 10 is photoelectrically converted. In actual production, the manufacturing process of the P-doped layer 61 and the N-doped layer 62 is complicated and expensive, and the form of directly eliminating the P-doped layer 61 and the N-doped layer 62 greatly reduces the production cost of the X-ray detector , Simplifying the process.

The semiconductor 80 formed by using a uniform porous structure filled with germanium particles 92 as the photoelectric conversion layer has more sensitive photoelectric conversion performance and higher photoelectric conversion efficiency. Therefore, when this embodiment is applied to an X-ray detector, The X-ray detector has more sensitive photoelectric conversion performance, and the photoelectric conversion efficiency is also better than that of an X-ray detector that uses an amorphous silicon diode for photoelectric conversion.

Optionally, the X-ray detector further includes: a protective layer 20 that fills the gap between the signal reading layer 90 and the scintillator 10 to expose the shading member 30 and the light The layer 80 and the signal reading layer 90 are isolated from the external environment.

In order to prevent the loss of electrical signals, each element of the X-ray detector needs to be strictly isolated from the external environment. Therefore, the X-ray detector further includes a protective layer 20, which is filled in the signal reading layer 90 and The space between the scintillators 10 isolates the light shielding member 30, the photosensitive layer 80 and the array substrate from the external environment.

In an embodiment, the protective layer 20 and the insulating layer may be the same substance, such as SiNx, or different substances, such as the insulating layer is SiNx, and the protective layer 20 is SiOx, the insulating layer and the protection Layer 20 is provided separately.

It can be understood that the semiconductor 80 including the photoelectric conversion layer 60, the P-doped layer 61, and the N-doped layer 62 can also be disposed between the scintillator 10 and the thin film transistor side by side with the light-shielding member 30. The thin film transistors are electrically connected by wires.

Since the semiconductor 80 of the X-ray detector has a photoelectric conversion layer 60 containing germanium particles 92, the X-ray detector can be used to convert a light wave signal with a longer wavelength, as compared with an amorphous silicon semiconductor to realize the photoelectric conversion function The X-ray detector has the function of converting long-wave optical signals into electrical signals.

The present application also proposes a display device including the aforementioned X-ray detector and an imaging device. The X-ray detector is electrically connected to the imaging device. The electrical signal generated by the X-ray detector due to the photoelectric effect forms an image through the imaging device .

In this embodiment, since the semiconductor that functions as a photoelectric converter in the X-ray detector has sensitive and efficient photoelectric conversion performance, and can realize the function of converting a long-wave optical signal into an electrical signal, therefore, under the same imaging effect , Can reduce the X-ray irradiation intensity or irradiation time, reduce the impact on the patient, and can break through the limitations of short-wave light. At the same time, by controlling the content of germanium in GeNx and GeOx or the ratio of silicon to germanium in SixGeyNz, SixGeyOzNw and SixGeyOz, the photoelectric conversion layer 60 can convert the visible light 94 converted by pure cesium iodide and sodium-doped cesium iodide to achieve The photoelectric conversion function of the X-ray detector enables the imaging device proposed in this application to avoid the damage to the user's health caused by metal thallium, and reduces a large amount of safety investment costs.

The above is only an optional embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structural transformation or direct/indirect use of the content of the description and drawings of this application under the concept of this application All other related technical fields are included in the patent protection scope of this application.

Claims

A semiconductor, wherein the semiconductor includes:

A photoelectric conversion layer, the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;

The transparent conductive film is located on the light incident side of the photoelectric conversion layer.
The semiconductor according to claim 1, wherein the germanium particles are nano germanium.
The semiconductor according to claim 2, wherein the germanium particles are uniform in size.
The semiconductor according to claim 1, wherein the porous structure is formed of one or more of germanium oxide, germanium nitride, an oxide containing germanium and silicon, and a nitride containing germanium and silicon.
The semiconductor according to claim 1, wherein the semiconductor further comprises a P-doped layer and an N-doped layer; the P-doped layer is located on the light incident side of the photoelectric conversion layer and is between the transparent conductive film and Between the photoelectric conversion layers, the N-doped layer is located on the light exit side of the photoelectric conversion layer.
The semiconductor according to claim 5, wherein the semiconductor further comprises an insulating medium, and the P-doped layer and the N-doped layer are wrapped in the insulating medium so that the P-doped layer is insulated from the N-doped layer.
The semiconductor according to claim 5, wherein the N-doped layer is located on the light exit side of the photoelectric conversion layer, the semiconductor further includes an insulating medium, and the P-doped layer and the N-doped layer are wrapped around the In the insulating medium, the P-doped layer is insulated from the N-doped layer.
An X-ray detector, wherein the X-ray detector includes:

A semiconductor, the semiconductor includes a photoelectric conversion layer, the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;

A signal reading layer is located on the light incident side of the photoelectric conversion layer, and the signal reading layer is electrically connected to the semiconductor;

A scintillator, the scintillator is a pure cesium iodide layer or a sodium-doped cesium iodide layer, the scintillator is located on the light incident side of the semiconductor, and the semiconductor performs photoelectric conversion on the visible light;

The light blocking member is located between the scintillator and the signal reading layer and corresponds to the position of the active layer in the signal reading layer to block the incident light of the active layer.
The X-ray detector according to claim 8, wherein the signal reading layer is a thin film transistor, and the semiconductor penetrates an insulating protective layer of the thin film transistor and is electrically connected to the drain of the thin film transistor.
The X-ray detector according to claim 8, wherein the signal reading layer is a thin film transistor, and the photoelectric conversion layer does not penetrate the insulating protective layer of the thin film transistor, and leaks through the thin film transistor through a wire极电连接。 Polar connection.
The X-ray detector according to claim 8, wherein the semiconductor and the light blocking member are arranged side by side between the scintillator and the signal reading layer.
The X-ray detector according to claim 8, wherein the semiconductor and the light blocking member are vertically stacked between the scintillator and the signal reading layer, and the semiconductor is located on the light incident side of the light blocking member .
The X-ray detector according to claim 8, wherein the semiconductor and the signal reading layer are electrically connected by a wire.
The X-ray detector according to claim 8, wherein the X-ray detector further comprises: a protective layer filled in the gap between the signal reading layer and the scintillator to remove The shading member, semiconductor and signal reading layer are isolated from the external environment.
The X-ray detector according to claim 14, wherein the protective layer is composed of silicon oxide or silicon nitride.
The X-ray detector according to claim 8, wherein the scintillator comprises cesium iodide.
A display device, wherein the display device includes:

A semiconductor, the semiconductor includes a photoelectric conversion layer, the photoelectric conversion layer has a uniform porous structure, and the pores are filled with germanium particles;

A signal reading layer is located on the light incident side of the photoelectric conversion layer, and the signal reading layer is electrically connected to the semiconductor;

A scintillator, the scintillator is a pure cesium iodide layer or a sodium-doped cesium iodide layer, the scintillator is located on the light incident side of the semiconductor, and the semiconductor performs photoelectric conversion on the visible light;

A light blocking member, located between the scintillator and the signal reading layer and corresponding to the position of the active layer in the signal reading layer, to block the incident light of the active layer;

The display device further includes an imaging device electrically connected to the signal reading layer.