WO2020143484A1

WO2020143484A1 - Light-sensitive device, x-ray detector and display apparatus

Info

Publication number: WO2020143484A1
Application number: PCT/CN2019/129308
Authority: WO
Inventors: 卓恩宗
Original assignee: 惠科股份有限公司
Priority date: 2019-01-11
Filing date: 2019-12-27
Publication date: 2020-07-16
Also published as: US20210135036A1; CN109860329B; CN109860329A; US11476379B2

Abstract

Disclosed in the present application is a light-sensitive device, comprising: a light-sensitive layer (1), a first electrode (2) and a second electrode (3); the light-sensitive layer (1) is made by stacking a plurality of fillers, the fillers being evenly distributed nanopore structures, and the nanopore structures being filled with gaseous selenium; the first electrode (2) is disposed at the light entry side of the light-sensitive layer (1), and the second electrode (3) is disposed at the light exit side of the light-sensitive layer (1). Further disclosed in the present application are an X-ray detector and a display apparatus.

Description

Photosensitive device, X-ray detector and display device

This application requires the priority of the Chinese patent application with the application number 201910030104.X and the name "Photosensitive Device, X-ray Detector and Display Device", which was applied on January 11, 2019, and the entire content of which is hereby incorporated by reference.

Technical field

The present application relates to the field of detectors, in particular to a photosensitive device, an X-ray detector and a display device.

Background technique

The statements herein provide only background information related to the present application and do not necessarily constitute exemplary technology.

X-ray detectors are widely used in medical instruments. For example, X-rays are used for chest radiography. The photoelectric conversion function of X-ray detectors is mainly completed by amorphous silicon photosensitive devices. X-rays are converted by scintillators (currently CsI) Into visible light, and then converts the visible light into an electrical signal through an amorphous silicon photosensitive device, and is converted into a thin film transistor (TFT). Since the structure of amorphous silicon is not stable enough and the light conversion efficiency is low, the light wave range absorbed by the amorphous silicon photosensitive device is wide, and the light conversion is not sensitive enough, which reduces the light absorption efficiency and light conversion efficiency of the X-ray detector.

Technical solution

The main purpose of the present application is to provide a photosensitive device, an X-ray detector and a display device, which improve the light absorption efficiency and light conversion efficiency of the X-ray detector.

To achieve the above objective, the photosensitive device proposed in this application includes:

A photosensitive layer, the photosensitive layer is formed by stacking a plurality of fillers, the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium;

A first electrode provided on the light incident side of the photosensitive layer;

A second electrode provided on the light exit side of the photosensitive layer.

Optionally, the pore diameter of the nanopore structure is 2 nm to 10 nm.

Optionally, the gas selenium can be filled into the nanopore structure in a pulsed manner.

Optionally, the filler is formed by SixOy.

Optionally, the filler is a strip-shaped filler.

Optionally, the first electrode is electrically connected to the photosensitive layer, and the second electrode is electrically connected to the signal reading element.

Optionally, the first electrode is a transparent electrode, and the second electrode is a metal electrode.

Optionally, the second electrode has an in-line structure.

Optionally, the second electrode has a T-shaped structure.

Optionally, the photosensitive device is a direct photosensitive detector.

Optionally, the X-ray detector includes a substrate and a photosensitive device, and the photosensitive device is provided on the light incident side of the X-ray detector to sense the X-ray light intensity and convert it into an electrical signal;

The X-ray detector also includes:

A signal reading element provided on the substrate and electrically connected to the photosensitive device to receive and read the converted electrical signal of the photosensitive device.

Wherein, the photosensitive device includes:

A first electrode provided on the light incident side of the photosensitive layer; and

A second electrode provided on the light exit side of the photosensitive layer.

Optionally, the pore diameter of the nanopore structure is 2 nm to 10 nm.

Optionally, the filler is formed by SixOy.

Optionally, the X-ray detector further includes a protective layer that fills the gap between the signal reading element and the photosensitive device to isolate the signal reading element from the external environment.

Optionally, the thickness of the protective layer is 500 nm to 2000 nm.

Optionally, the second electrode penetrates the protective layer and is electrically connected to the drain of the signal reading element.

Optionally, the second electrode is electrically connected to the drain of the signal reading element through a wire.

Optionally, the display device includes, for example, an X-ray detector, and the X-ray detector includes a substrate and a photosensitive device, and the photosensitive device is provided on a light incident side of the X-ray detector to sense the light of X-rays Strength, and converted into electrical signals;

The X-ray detector also includes:

A signal reading element provided on the substrate and electrically connected to the photosensitive device to receive and read the converted electrical signal of the photosensitive device;

Wherein, the photosensitive device includes:

A second electrode provided on the light exit side of the photosensitive layer.

Optionally, the display device further includes an imaging device electrically connected to the signal reading element.

The present application provides a photosensitive device, an X-ray detector, and a display device. The photosensitive device includes: a photosensitive layer, a first electrode, and a second electrode; the photosensitive layer is formed by stacking a plurality of fillers, and the fillers are evenly distributed Nanopore structure, and the nanopore structure is filled with gaseous selenium; the first electrode is provided on the light incident side of the photosensitive layer; the second electrode is provided on the light emitting side of the photosensitive layer. The photosensitive device of the embodiment of the present application is formed by stacking a plurality of fillers in the photosensitive layer. The fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium to increase the contact area of light and increase the photosensitive layer The light sensitivity of the photosensitive layer, thereby improving the light absorption efficiency of the photosensitive layer and the light conversion efficiency of the photosensitive layer.

BRIEF DESCRIPTION

In order to more clearly explain the technical solutions in the embodiments or exemplary embodiments of the present application, the drawings required in the embodiments or exemplary descriptions will be briefly described below. Obviously, the drawings in the following description are only For some embodiments of the application, those of ordinary skill in the art can obtain other drawings according to the structures shown in the drawings without creative efforts.

1 is a schematic structural diagram of a photosensitive device according to an embodiment of the application;

2 is a schematic structural diagram of a photosensitive device according to another embodiment of this application;

3 is a schematic structural diagram of an X-ray detector according to an embodiment of the present application;

4 is a schematic structural diagram of an X-ray detector according to another embodiment of the present application.

The implementation, functional characteristics and advantages of the present application will be further described in conjunction with the embodiments and with reference to the drawings.

Embodiments of the invention

The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments . Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the scope of protection of the present application.

It should be noted that all the directional indicators (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only to explain the relative between the components in a certain posture (as shown in the drawings) If the specific posture changes, such as positional relationship, movement, etc., the directional indication changes accordingly.

In addition, the descriptions of "first", "second", etc. in this application are for descriptive purposes only, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" may include at least one of the features either explicitly or implicitly. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of those skilled in the art to achieve. When the combination of technical solutions conflicts with each other or cannot be realized, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.

As shown in FIGS. 1-2, this application proposes a photosensitive device.

1 and 2, the photosensitive device includes a photosensitive layer 1, a first electrode 2 and a second electrode 3; wherein, the photosensitive layer 1 is configured to sense the intensity of light and convert the light signal of the light into an electrical signal In order to transmit the electrical signal to the signal reading element, optionally, the photosensitive layer 1 is in direct contact with light, that is, the light is directly irradiated on the photosensitive layer 1, that is, the photosensitive device of the present application is a direct photosensitive detector. Specifically, the light received by the photosensitive layer 1 is X-ray, and through its photoelectric conversion function, the X-ray optical signal is converted into an electrical signal, which is transmitted to the signal reading element through the second electrode 3 for The signal reading element reads; that is, the photosensitive device of the present application is a direct X-ray detector.

In an embodiment, the first electrode 2 and the second electrode 3 are disposed on opposite sides of the photosensitive layer 1, that is, the first electrode 2 is disposed on the light incident side of the photosensitive layer 1, and the second electrode 3 is disposed on the photosensitive layer 1 Light exit side; the definition of the light entrance side and the light exit side in this embodiment is set for the X-rays emitted by an external X-ray generator. When the position of the X-ray generator changes, that is, the light entrance side and the light exit side of the photosensitive layer 1 The location of the has also changed, and will not be repeated here. The second electrode 3 is electrically connected to the above-mentioned signal reading element to convert the optical signal received by the photosensitive layer 1 into an electrical signal and then directly transmitted to the signal reading element through the second electrode 3 without the need for external X After the radiation is converted into visible light, it is transmitted to the signal reading element, thereby improving the efficiency of light absorption.

In an embodiment, the photosensitive layer 1 is formed by stacking a plurality of fillers, and the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium (Se). Specifically, the filler is a strip-shaped filler and has a uniformly distributed nanopore structure inside. The nanopore structure is similar to a honeycomb hole. In this embodiment, gaseous selenium is filled into the nanopore structure to The contact area of the photosensitive layer 1 is increased, that is, when light is irradiated on the photosensitive layer 1, the light directly acts on the filler and acts on the gaseous selenium of the nanopore structure, thereby increasing the contact area of the light to increase the sensitivity The light sensitivity of the layer 1 improves the light absorption efficiency of the photosensitive layer 1, that is, indirectly improves the light conversion efficiency of the photosensitive layer 1.

In an embodiment, a plurality of fillers are stacked in the photosensitive layer 1, and the photosensitive layer 1 can be in a saturated state, so that the light absorption efficiency is higher. In this embodiment, the number of fillers can be set according to the preparation of the photosensitive layer 1, which is not limited herein.

In one embodiment, the gas selenium can be filled into the nanopore structure in a pulsed manner. Of course, in other embodiments, it may also be filled in other ways, and there is no limitation here.

In one embodiment, the first electrode 2 is electrically connected to the photosensitive layer 1, and the second electrode 3 is electrically connected to the signal reading element. When a voltage is applied between the first electrode 2 and the second electrode 3, light is incident on the photosensitive layer 1 from the first electrode 2, the photosensitive layer 1 senses the light, detects the intensity of the light, and converts the light signal of the light It is an electrical signal. In this embodiment, the electrical signal is a current signal, that is, when the light intensity is strong, the current signal is large; when the light intensity is weak, the current signal is small. The photosensitive layer 1 transmits the converted electrical signal to the signal reading element through the second electrode 3.

In one embodiment, the photosensitive layer 1 can be directly in contact with light, which can reduce the loss of light, thereby improving the utilization of light.

In the embodiment of the present application, the photosensitive layer 1 is formed by stacking a plurality of fillers, the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium; the first electrode 2 is provided On the light incident side of the photosensitive layer 1; the second electrode 3 is provided on the light emitting side of the photosensitive layer 1. The photosensitive device of the embodiment of the present application is formed by stacking a plurality of fillers in the photosensitive layer 1, the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium to increase the contact area of light and increase the sensitivity The light sensitivity of the layer 1 improves the light absorption efficiency of the photosensitive layer 1 and the light conversion efficiency of the photosensitive layer 1.

In one embodiment, the pore diameter of the nanopore structure is 2 nm-10 nm.

Further, the pore diameter of the nanopore structure is 6 nm, so that gaseous selenium can be accommodated in the nanopore structure more, so that the space of the nanopore structure reaches a saturation state, thereby improving the utilization rate of the nanopore structure and providing light Absorption efficiency. Of course, in other embodiments, the pore diameter of the nanopore structure is any value from 2 nm to 10 nm (not including 6 nm), which is not limited herein.

In one embodiment, the filler is formed of SixOy (silicon oxide), that is, the filler is a silicon oxide material.

Specifically, the silicon oxide crystal is dissolved in an alcohol solution, and the alcohol solution contains a surfactant to induce silicon oxide. The concentration of the surfactant is increased due to the volatilization of alcohol. When the concentration of the surfactant is close to 10%, the oxidation Silicon begins to form a pore structure. When the concentration reaches 35%, the pore structure of silicon oxide is relatively uniform, and they are closely arranged in a honeycomb shape. This state continues until the concentration of the surfactant exceeds 70%. When the concentration exceeds 70 After %, silicon oxide forms a layered liquid crystal, at this time, gaseous selenium is not convenient to fill the silicon oxide filler. That is, when silicon oxide crystals are dissolved in an alcohol solution and the concentration of the surfactant in the alcohol solution is 35% to 70%, gaseous selenium can be easily filled into the filler.

In an embodiment, the concentration of the surfactant can control the size of the nanopore, and the diameter of the nanopore is between 2 nm and 10 nm. Of course, the type of surfactant can also control the size of the nanopore. For example, when the surfactant is P123, the pore diameter of the nanopore is in the range of 5nm to 10nm. When the surfactant is CTAB, the pore of the nanopore The diameter is in the range of 2nm~4.5nm, when the surfactant is F127, the pore diameter of the nanopore is in the range of 2.5nm~4.5nm; at this time, the filling is controlled by controlling the pore diameter of the nanopore to control the filler to absorb a specific wavelength The light enables the filler to absorb light with a wavelength within a certain range steadily. Therefore, gaseous selenium in nanopores has a more sensitive response to light and higher photoelectric conversion efficiency than amorphous silicon. It can be understood that the types of surfactants are not limited to the above three.

In an embodiment, in order to make the light absorption efficiency of the photosensitive layer 1 higher, the first electrode 2 is set as a transparent electrode, that is, light can directly pass through the first electrode 2, it should be understood that light can be directly transmitted through The first electrode 2 irradiates the photosensitive layer 1, that is, the transparent electrode also has high light transmittance to transmit light, thereby reducing the loss of light and improving the utilization rate of light.

In one embodiment, since the second electrode 3 is electrically connected to the above-mentioned signal reading element 5, that is, the second electrode 3 is set as a metal electrode, while the electrical signal can be conducted, the opacity of the metal can be used to Covering the signal reading element 5 prevents light from entering the signal reading element, thereby causing inaccuracy in reading the signal. Specifically, the material of the metal electrode may include metal materials including copper, nickel and the like, which is not limited herein.

In an embodiment, the second electrode 3 may be a straight structure (see FIG. 1) or a T-shaped structure (see FIG. 2). Of course, in order to cooperate with the signal reading element, the second electrode 3 may also be For other structures, there are no restrictions in this application.

Based on the foregoing embodiment, another embodiment of the present application further provides an X-ray detector. Referring to FIG. 3, the X-ray detector includes a substrate 4 and the photosensitive device in the foregoing embodiment. The photosensitive device is provided on the X-ray The light entrance side of the detector can sense the X-ray light intensity and convert it into an electrical signal. Among them, the definition of the light incident side in this embodiment is set for the X-rays emitted by the external X-ray generator. When the position of the X-ray generator changes, that is, the position of the light incident side of the X-ray detector also follows Changes will not be repeated here.

In one embodiment, as shown in FIGS. 1-2, the photosensitive device includes a photosensitive layer 1, a first electrode 2, and a second electrode 3. The photosensitive layer 1 is formed by stacking a plurality of fillers, and the fillers are uniformly distributed nanometers The pore structure is filled with gaseous selenium (Se). The first electrode 2 is located on the light-incident side of the photosensitive layer 1 and the second electrode 3 is located on the light-exiting side of the photosensitive layer 1 to increase the light contact area. The light sensitivity of the photosensitive layer 1 is increased, thereby improving the light absorption efficiency of the photosensitive layer 1 and the light conversion efficiency of the photosensitive layer 1.

Further, the pore diameter of the nanopore structure is 2 nm to 10 nm. In this application, the pore diameter of the nanopore structure can be selected to be 6 nm, so that gaseous selenium can be accommodated in the nanopore structure more, so that the space of the nanopore structure reaches a saturation state, thereby improving the utilization rate of the nanopore structure, Provides light absorption efficiency. Of course, in other embodiments, the pore diameter of the nanopore structure is any value from 2 nm to 10 nm (not including 6 nm), which is not limited herein.

Further, the filler is formed by SixOy, that is, the filler is a silicon oxide material.

Further, in order to make the light absorption efficiency of the photosensitive layer 1 higher, the first electrode 2 is set as a transparent electrode, that is, light can directly pass through the first electrode 2, it should be understood that light can be directly transmitted through the first The electrode 2 also irradiates the photosensitive layer 1, that is, the transparent electrode also has high light transmittance to transmit light, thereby reducing the loss of light and improving the utilization rate of light.

Further, since the second electrode 3 is electrically connected to the above-mentioned signal reading element 5, that is, the second electrode 3 is set as a metal electrode, while the electrical signal can be conducted, the signal can be utilized by the opacity of the metal The reading element 5 is covered to prevent light from entering the signal reading element, thereby causing inaccuracy in reading the signal. Specifically, the material of the metal electrode may include metal materials including copper, nickel and the like, which is not limited herein.

In one embodiment, the X-ray detector further includes a signal reading element 5 which is provided on the substrate 4 and is electrically connected to the photosensitive device to receive and read the converted electrical signal of the photosensitive device. Specifically, the signal reading element 5 may be a TFT (thin film transistor) structure, and is configured to read the electrical signal of the photosensitive device, and the electrical signal is a current signal.

In one embodiment, the substrate 4 may be a glass substrate 4, a silicon wafer, a polyimide PI plastic substrate 4, etc., which is not limited herein.

In one embodiment, the X-ray detector is also provided with an X-ray generator (not shown), which is arranged to emit X-rays, and the X-ray detector is provided on the light incident side of the X-ray generator, that is, the photosensitive device Layer 1 is provided on the light incident side of the X-ray detector. Specifically, the photosensitive layer 1 is formed by stacking a plurality of fillers, and the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium, which is configured to convert X-ray optical signals into electrical signals and transmit Into the signal reading element 5.

In one embodiment, the drain of the signal reading element 5 is provided on the substrate 4 and is electrically connected to the second electrode 3 of the photosensitive device to conduct electrical signals. Of course, optionally, as shown in FIG. 3, the second electrode 3 is a T-shaped electrode, that is, the second electrode 3 penetrates the protective layer 6 and is electrically connected to the drain of the signal reading element 5 to make an electrical signal Is more efficient and faster; of course, in another embodiment, as shown in FIG. 4, the second electrode 3 is an in-line electrode. At this time, the second electrode 3 is connected to the leakage of the signal reading element 5 through a wire There is no restriction on the electrical connection in this application.

In a specific embodiment, the X-ray detector further includes a protective layer 6, the protective layer 6 fills the gap between the signal reading element 5 and the photosensitive device, and is configured to isolate the signal reading element 5 from the external environment.

In an embodiment, in order to support the photosensitive device, the thickness of the protective layer 6 is set to 500 nm to 2000 nm, which can make the structure of the entire X-ray detector more stable and ensure the flatness of the X-ray detector.

The technical solution of the present application uses the above-mentioned photosensitive device, and a plurality of fillers are stacked in the photosensitive layer 1 of the photosensitive device. The filler is a uniformly distributed nanopore structure, and the nanopore structure is filled with gaseous selenium to increase light contact The area increases the light sensitivity of the photosensitive layer 1, thereby improving the light absorption efficiency of the photosensitive layer 1 and the light conversion efficiency of the photosensitive layer 1.

Based on all the above-mentioned embodiments, referring to FIGS. 1-4, an embodiment of the present application further proposes a display device including the aforementioned X-ray detector and imaging device (not shown). The X-ray detector and imaging device Connected, the electrical signal generated by the X-ray detector due to the photoelectric effect forms an image through the imaging device.

In one embodiment, as shown in FIGS. 1-2, the photosensitive device includes a photosensitive layer 1, a first electrode 2, and a second electrode 3. The photosensitive layer 1 is formed by stacking a plurality of fillers, and the fillers are uniformly distributed nanometers The pore structure is filled with gaseous selenium (Se). The first electrode 2 is disposed on the light-incident side of the photosensitive layer 1 and the second electrode 3 is disposed on the light-emitting side of the photosensitive layer 1.

In one embodiment, as shown in FIGS. 3 to 4, the X-ray detector includes a substrate 4 and the photosensitive device in the above embodiment. The photosensitive device is provided on the light incident side of the X-ray detector to sense the X-ray light Strength, and converted into electrical signals.

Further, the X-ray detector further includes a signal reading element 5 which is provided on the substrate 4 and is electrically connected to the photosensitive device to receive and read the converted electrical signal of the photosensitive device. Specifically, the signal reading element 5 may be a TFT (thin film transistor) structure, and is configured to read the electrical signal of the photosensitive device, and the electrical signal is a current signal.

Optionally, because the photosensitive device in the X-ray detector that has the photoelectric conversion function has sensitive and efficient photoelectric conversion performance, under the same imaging effect, the X-ray irradiation intensity or irradiation time can be reduced, and the exposure to the patient can be reduced. influences.

The technical solution of the present application adopts the above-mentioned X-ray detector, and a plurality of fillers are stacked in the photosensitive layer 1 of the photosensitive device in the X-ray detector. The filler is a uniformly distributed nanopore structure, and the nanopore structure is filled with a gaseous state Selenium can increase the contact area of light and increase the light sensitivity of the photosensitive layer 1, thereby improving the light absorption efficiency of the photosensitive layer 1 and the light conversion efficiency of the photosensitive layer 1.

The above is only an optional embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structural transformation or direct/indirect use of the content of the description and drawings of this application under the concept of this application All other related technical fields are included in the patent protection scope of this application.

Claims

A photosensitive device, wherein the photosensitive device comprises:

A photosensitive layer, the photosensitive layer is formed by stacking a plurality of fillers, the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium;

A first electrode provided on the light incident side of the photosensitive layer; and

A second electrode provided on the light exit side of the photosensitive layer.
The photosensitive device according to claim 1, wherein the nanopore structure has a pore diameter of 2 nm to 10 nm.
The photosensitive device according to claim 1, wherein the gas selenium can be filled into the nanopore structure in a pulse manner.
The photosensitive device according to claim 1, wherein the filler is formed of SixOy.
The photosensitive device according to claim 4, wherein the filler is a strip-shaped filler.
The photosensitive device according to claim 1, wherein the first electrode is electrically connected to the photosensitive layer, and the second electrode is electrically connected to a signal reading element.
The photosensitive device according to claim 6, wherein the first electrode is a transparent electrode and the second electrode is a metal electrode.
The photosensitive device according to claim 1, wherein the second electrode has an in-line structure.
The photosensitive device according to claim 1, wherein the second electrode has a T-shaped structure.
The photosensitive device according to claim 1, wherein the photosensitive device is a direct photosensitive detector.
An X-ray detector, wherein the X-ray detector includes a substrate and a photosensitive device, the photosensitive device is provided on the light incident side of the X-ray detector to sense the X-ray light intensity and convert it into electricity signal;

The X-ray detector also includes:

A signal reading element provided on the substrate and electrically connected to the photosensitive device to receive and read the converted electrical signal of the photosensitive device;

Wherein, the photosensitive device includes:

A photosensitive layer, the photosensitive layer is formed by stacking a plurality of fillers, the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium;

A first electrode provided on the light incident side of the photosensitive layer; and

A second electrode provided on the light exit side of the photosensitive layer.
The photosensitive device according to claim 11, wherein the pore diameter of the nanopore structure is 2 nm to 10 nm.
The photosensitive device according to claim 11, wherein the filler is formed of SixOy.
The photosensitive device according to claim 11, wherein the first electrode is a transparent electrode and the second electrode is a metal electrode.
The X-ray detector according to claim 11, wherein the X-ray detector further includes a protective layer, the protective layer is filled in a gap between the signal reading element and the photosensitive device, and the The signal reading element is isolated from the external environment.
The X-ray detector according to claim 15, wherein the protective layer has a thickness of 500 nm to 2000 nm.
The X-ray detector according to claim 16, wherein the second electrode penetrates the protective layer and is electrically connected to the drain of the signal reading element.
The X-ray detector according to claim 16, wherein the second electrode is electrically connected to the drain of the signal reading element through a wire.
A display device, comprising an X-ray detector, the X-ray detector includes a substrate and a photosensitive device, the photosensitive device is provided on the light entrance side of the X-ray detector to sense the light intensity of X-rays, And converted into electrical signals;

The X-ray detector also includes:

A signal reading element provided on the substrate and electrically connected to the photosensitive device to receive and read the converted electrical signal of the photosensitive device;

Wherein, the photosensitive device includes:

A photosensitive layer, the photosensitive layer is formed by stacking a plurality of fillers, the fillers are uniformly distributed nanopore structures, and the nanopore structures are filled with gaseous selenium;

A first electrode provided on the light incident side of the photosensitive layer; and

A second electrode provided on the light exit side of the photosensitive layer.
The display device according to claim 19, wherein the display device further comprises an imaging device electrically connected to the signal reading element.