WO2020143452A1 - 薄膜表面处理方法及薄膜表面处理设备 - Google Patents

薄膜表面处理方法及薄膜表面处理设备 Download PDF

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Publication number
WO2020143452A1
WO2020143452A1 PCT/CN2019/128322 CN2019128322W WO2020143452A1 WO 2020143452 A1 WO2020143452 A1 WO 2020143452A1 CN 2019128322 W CN2019128322 W CN 2019128322W WO 2020143452 A1 WO2020143452 A1 WO 2020143452A1
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Prior art keywords
hydrofluoric acid
chamber
film
air knife
thin film
Prior art date
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Ceased
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PCT/CN2019/128322
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English (en)
French (fr)
Inventor
邓治国
王振
晏熙
郭昭
李发业
黄超
刘杰
刘岩
李显杰
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Priority to US16/961,329 priority Critical patent/US20210125822A1/en
Publication of WO2020143452A1 publication Critical patent/WO2020143452A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a film surface treatment method and film surface treatment equipment.
  • Low-temperature polycrystalline silicon thin-film transistor (Low-Temperature-Poly-silicon Film Transistor, LTPS) TFT process, usually involves amorphous silicon (Amorphous Silicon, a-Si) through the excimer laser annealing (Excimer Laser Annealing, ELA) process into The process of Polycrystalline Silicon (p-Si).
  • ELA Excimer Laser Annealing
  • p-Si Polycrystalline Silicon
  • it is generally necessary to pretreat the surface of the amorphous silicon film before the ELA process so that a silicon oxide film is formed on the surface of the amorphous silicon film.
  • the unevenness of the surface of the amorphous silicon thin film that is, Mura
  • the presence of the Mura will result in poor uniformity of the generated silicon oxide thin film, thereby affecting the ELA process effect, and thus adversely affecting the performance of the thin film transistor.
  • An embodiment of the present disclosure provides a film surface treatment method, including:
  • the surface of the thin film subjected to the cleaning treatment is oxidized with ozone water to form an oxide layer on the surface of the thin film.
  • the method further includes: using a chemically inert gas to dry the film surface after the etching process.
  • the method further includes: using a chemically inert gas to dry the film surface after the cleaning process.
  • the cleaning solution includes an aqueous solution.
  • the method before the hydrofluoric acid is used to etch the surface of the film, the method further includes:
  • the ozone water is used to remove impurities on the surface of the film.
  • an embodiment of the present disclosure also provides a thin film surface treatment device, including: a hydrofluoric acid etching chamber, a hydrofluoric acid cleaning chamber, an ozone oxidation chamber, and a carrying base;
  • the outlet of the hydrofluoric acid etching chamber is connected to the inlet of the hydrofluoric acid cleaning chamber, the outlet of the hydrofluoric acid cleaning chamber is connected to the inlet of the ozone oxidation chamber, and the carrying base Penetrating the hydrofluoric acid etching chamber and its outlet, penetrating the hydrofluoric acid cleaning chamber and its inlet and outlet, and penetrating the ozone oxidation chamber and its inlet;
  • the carrying base is configured to carry the base substrate on which the thin film is formed
  • the hydrofluoric acid etching chamber is configured to use hydrofluoric acid to etch the surface of the film
  • the hydrofluoric acid cleaning chamber is configured to use a cleaning solution to clean the hydrofluoric acid on the film surface after the etching process;
  • the ozone oxidation chamber is configured to use ozone water to oxidize the surface of the film after the cleaning process to form an oxide layer on the surface of the film.
  • the outlet of the hydrofluoric acid etching chamber and the inlet of the hydrofluoric acid cleaning chamber are connected by a first air knife and a first baffle; wherein, the first An air knife is located on the side of the carrier base where the film is provided, and the first baffle is located on the side of the carrier base that faces away from the film;
  • the first air knife is configured to blow out a chemically inert gas at a first preset pressure, separate the hydrofluoric acid etching chamber and the hydrofluoric acid cleaning chamber, and The film surface after the hydrofluoric acid etching treatment is dried.
  • the direction of the gas blown out by the first air knife and the direction perpendicular to the bearing base have a first preset angle, so that the first air knife The blown gas is inclined toward the hydrofluoric acid etching chamber.
  • the outlet of the hydrofluoric acid cleaning chamber and the inlet of the ozone oxidation chamber are connected by a second air knife and a second baffle; wherein, the second air knife Located on the side of the carrying base where the film is provided, and the second baffle is located on the side of the carrying base that faces away from the film;
  • the second air knife is configured to blow out a chemically inert gas at a second preset pressure, to separate the hydrofluoric acid cleaning chamber from the ozone oxidation chamber, and to clean the The surface of the film is dried.
  • the second air knife includes: a first sub air knife and a second sub air knife that are independent of each other;
  • the first sub air knife is located near the outlet of the hydrofluoric acid cleaning chamber, and the second sub air knife is located near the inlet of the ozone oxidation chamber.
  • the direction of the gas blown out by the first sub-air knife and the direction perpendicular to the bearing base have a second preset angle, so that the first sub The gas blown by the air knife is inclined toward the hydrofluoric acid cleaning chamber.
  • the direction of the gas blown by the second sub-air knife and the direction perpendicular to the bearing base have a third preset angle, so that the second sub The gas blown by the air knife is inclined toward the ozone oxidation chamber.
  • FIG. 1 is a flowchart of a thin film surface treatment method provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of a thin film surface treatment device provided by an embodiment of the present disclosure
  • FIG. 3 is another schematic structural diagram of a thin film surface treatment device provided by an embodiment of the present disclosure.
  • the LTPS TFT is generally prepared on the base substrate.
  • the active layer in the LTPS TFT usually involves the process of transforming amorphous silicon into polysilicon through the ELA process.
  • the silicon oxide film can effectively absorb laser energy in the ELA process, fully melt a-Si, and act as an insulating layer of amorphous silicon in the molten state in the ELA process, so that the amorphous silicon is formed with a certain grain size and uniformity Polycrystalline silicon with better properties.
  • the pretreatment method for the surface of the amorphous silicon thin film may include the following steps: (1) using ozone water to remove impurities on the surface of the amorphous silicon thin film, so as to remove organic substances that may remain on the surface of the amorphous silicon thin film. In this step, an uneven silicon oxide layer may be formed on the surface of the amorphous silicon thin film. (2) (2) Hydrofluoric acid is used to etch the surface of the amorphous silicon film to remove the silicon oxide layer formed on the surface of the amorphous silicon film. (3) Use ozone water to oxidize the surface of the amorphous silicon film to form a dense and uniform silicon oxide layer on the surface of the amorphous silicon film.
  • hydrofluoric acid may remain on the surface of the amorphous silicon thin film.
  • the residual hydrofluoric acid may cause excessive etching of the amorphous silicon, resulting in the Mura phenomenon on the surface of the amorphous silicon thin film.
  • the existence of the Mura phenomenon will result in poor uniformity of the generated silicon oxide thin film, thereby affecting the ELA process effect, and thus adversely affecting the performance of the thin film transistor.
  • the embodiments of the present disclosure provide a thin film surface treatment method configured to avoid the Mura phenomenon on the surface of the amorphous silicon thin film.
  • the film surface treatment method provided by an embodiment of the present disclosure may include the following steps:
  • the film surface treatment method provided by the embodiment of the present disclosure can etch away the substances on the film surface by using hydrofluoric acid to etch the film surface.
  • the cleaning solution is used to clean the hydrofluoric acid on the surface of the film after the etching process to remove the residual hydrofluoric acid on the surface of the film, which can avoid the excessive etching of the film caused by the residual hydrofluoric acid.
  • ozone water is used to oxidize the surface of the film after the cleaning treatment, so that a dense and uniform oxide layer can be formed on the surface of the film. Therefore, when performing the ELA process, the ELA process effect can be improved.
  • the thin film may be an amorphous silicon thin film.
  • hydrofluoric acid to etch the surface of the amorphous silicon film
  • substances on the surface of the amorphous silicon film can be etched away, for example, an uneven silicon oxide film is etched to expose the amorphous silicon.
  • the cleaning solution is used to clean the hydrofluoric acid on the surface of the amorphous silicon film after etching to remove the residual hydrofluoric acid on the surface of the amorphous silicon film, which can avoid excessive etching of the amorphous silicon caused by the residual hydrofluoric acid Case.
  • ozone water is used to oxidize the surface of the amorphous silicon film after the cleaning process, so that a dense and uniform silicon oxide layer can be formed on the surface of the amorphous silicon film. Therefore, when the ELA process is performed, the ELA process effect can be improved, thereby improving the performance of the prepared thin film transistor.
  • the ELA process is used to transform the amorphous silicon thin film into a polycrystalline silicon thin film. After the polysilicon film is formed, a gate insulating layer is also formed on the polysilicon film.
  • the surface of the polycrystalline silicon thin film may be pretreated.
  • the thin film may also be a polycrystalline silicon thin film converted from an amorphous silicon thin film. In this way, by using hydrofluoric acid to etch the surface of the polysilicon film, substances on the surface of the polysilicon film can be etched away to expose the polysilicon.
  • the cleaning solution is used to clean the hydrofluoric acid on the surface of the polysilicon film after the etching process to remove the residual hydrofluoric acid on the surface of the polysilicon film, which can avoid the excessive etching of polysilicon caused by the residual hydrofluoric acid.
  • using ozone water to oxidize the surface of the polysilicon film after the cleaning process can form a dense and uniform silicon oxide layer on the surface of the polysilicon film, thereby improving the performance of the prepared thin film transistor.
  • the film may be an amorphous silicon film as an example for description.
  • the cleaning solution is configured to clean hydrofluoric acid, for example, it may be an aqueous solution. This can not only achieve the cleaning effect, but also reduce costs. Further, the aqueous solution may be ultrapure water. Of course, in practical applications, the cleaning solution can be designed and determined according to the actual application environment, which is not limited herein.
  • after performing the etching process and before performing the cleaning process it may further include: drying the film surface after the etching process by using a chemically inert gas deal with. In this way, the remaining hydrofluoric acid can be further removed, and the situation that the remaining hydrofluoric acid causes excessive etching of the amorphous silicon film can be further avoided.
  • the chemically inert gas since the chemically inert gas is used, it can also avoid the oxidation of the film after the etching process is in contact with the air.
  • after performing the cleaning process and before performing the oxidation process it may further include: drying the surface of the film after the cleaning process with a chemically inert gas. In this way, the cleaning solution can be removed, and the amorphous silicon film after the etching process can be prevented from contacting the air and causing oxidation.
  • the chemically inert gas may include at least one of inert gas and nitrogen.
  • impurities such as organic substances may remain on the surface of the film.
  • it may further include: using ozone water to remove impurities on the film surface. This can remove impurities (such as organic matter) that may remain on the surface of the amorphous silicon film.
  • the remaining impurities can also be other substances, which need to be designed and determined according to the actual application environment, and are not limited here.
  • the film is an amorphous silicon film
  • the chemically inert gas is nitrogen
  • the aqueous solution is used to clean the hydrofluoric acid on the surface of the amorphous silicon film after the drying process in step (3) to remove the residual hydrofluoric acid on the surface of the amorphous silicon film, which can avoid the residual hydrofluoric acid A situation that causes excessive etching of amorphous silicon.
  • a water film can be provided on the surface of the amorphous silicon thin film, thereby further ensuring the purity of the process.
  • ozone water to oxidize the surface of the amorphous silicon film after the drying process in step (5), a dense and uniform silicon oxide layer can be formed on the surface of the amorphous silicon film. Therefore, when the ELA process is performed, the ELA process effect can be improved, thereby improving the performance of the prepared thin film transistor.
  • an embodiment of the present disclosure also provides a thin film surface treatment device, as shown in FIG. 2, may include: a hydrofluoric acid etching chamber 100, a hydrofluoric acid cleaning chamber 200, and an ozone oxidation chamber 300 And carrying base 400; wherein, the outlet 110 of the hydrofluoric acid etching chamber 100 is connected to the inlet 210 of the hydrofluoric acid cleaning chamber 200, and the outlet 220 of the hydrofluoric acid cleaning chamber 200 and the inlet of the ozone oxidation chamber 300 310 connection, the bearing base 400 penetrates the hydrofluoric acid etching chamber 100 and its outlet 110, penetrates the hydrofluoric acid cleaning chamber 200 and its inlet 210 and outlet 220, and penetrates the ozone oxidation chamber 300 and its inlet 310;
  • the carrier base 400 is configured to carry a base substrate formed with a thin film.
  • the hydrofluoric acid etching chamber 100 uses hydrofluoric acid to etch the film surface.
  • the hydrofluoric acid cleaning chamber 200 is configured to use a cleaning solution to clean the hydrofluoric acid on the film surface after the etching process.
  • the ozone oxidation chamber 300 is configured to use ozone water to oxidize the film surface after the cleaning process, so that an oxide layer is formed on the film surface.
  • the base substrate on which the thin film is formed is set on a supporting base, and the base substrate is sequentially passed through a hydrofluoric acid etching chamber and a hydrofluoric acid cleaning chamber And an ozone oxidation chamber; wherein, when the base substrate is in the hydrofluoric acid etching chamber, the film surface can be etched using hydrofluoric acid. Etching away the substances on the surface of the film.
  • the cleaning solution can be used to clean the hydrofluoric acid on the surface of the film after the etching process to remove the residual hydrofluoric acid on the surface of the film to avoid residual hydrogen Fluoric acid causes excessive etching of the film.
  • ozone water can be used to oxidize the surface of the film after the cleaning process, so that a dense and uniform oxide layer can be formed on the surface of the film. Therefore, when performing the ELA process, the ELA process effect can be improved.
  • the air knife is a device specially designed to blow out strong and high-speed airflow to remove dust, dry water stains, and cool down.
  • the airflow blown out by the air knife can be composed of high-strength, uniform laminar airflow.
  • the outlet 110 of the hydrofluoric acid etching chamber 100 and the inlet 210 of the hydrofluoric acid cleaning chamber 200 pass through the first air knife 510 and the first block The board 610 is connected.
  • the first air knife 510 is located on the side of the carrier base 400 where the film is provided, and the first baffle 610 is located on the side of the carrier base 400 that faces away from the film to etch the chamber 100 and clean the chamber with hydrofluoric acid Room 200 is disconnected.
  • the first air knife 510 is configured to blow out a chemically inert gas at a first preset pressure, separate the hydrofluoric acid etching chamber 100 and the hydrofluoric acid cleaning chamber 200, and The film surface after acid etching is dried.
  • the structure of the first air knife may be basically the same as the structure in the prior art, which should be understood by those of ordinary skill in the art, and will not be repeated here, nor should it be used as a limitation to the present disclosure.
  • the gas blown out by the first air knife is configured as a barrier wall between the hydrofluoric acid etching chamber 100 and the hydrofluoric acid cleaning chamber 200 on the side of the carrier base where the film is provided, to hydrofluoride
  • the hydrofluoric acid in the acid etching chamber 100 and the cleaning solution in the hydrofluoric acid cleaning chamber 200 are separated.
  • the gas blown out by the first air knife can also make the chemically inert gas in the hydrofluoric acid cleaning chamber 200, so that during the hydrofluoric acid cleaning process, the oxidation of amorphous silicon by air can be avoided.
  • the first preset pressure can be designed and determined according to the actual application environment, which is not limited herein.
  • the direction of the gas blown by the first air knife 510 is perpendicular to There is a first preset angle ⁇ between the directions of the supporting base, so that the gas blown out by the first air knife 510 is inclined toward the hydrofluoric acid etching chamber 100. This can further prevent the hydrofluoric acid in the hydrofluoric acid etching chamber 100 from entering the hydrofluoric acid cleaning chamber 200.
  • the first preset angle ⁇ can be designed and determined according to the actual application environment, and is not limited herein.
  • the outlet 220 of the hydrofluoric acid cleaning chamber 200 and the inlet 310 of the ozone oxidation chamber 300 are connected by a second air knife 520 and a second baffle 620 ;
  • the second air knife 520 is located on the side of the carrier base 400 where the film is provided
  • the second baffle 620 is located on the side of the carrier base 400 that faces away from the film to clean the ozone oxidation chamber 300 and hydrofluoric acid chamber 200 Disconnected.
  • the second air knife 520 is configured to blow out a chemically inert gas at a second preset pressure, separating the hydrofluoric acid cleaning chamber 200 and the ozone oxidation chamber 300 on the side of the film on which the carrier base is provided, And drying the film surface after cleaning treatment.
  • the second air knife 520 may include: a first sub air knife 521 and a second sub air knife 522 which are independent of each other; wherein the first sub air knife 521 is disposed near the outlet 220 of the hydrofluoric acid cleaning chamber 200, The second air knife 522 is disposed near the inlet 310 of the ozone oxidation chamber 300.
  • the gas blown out by the first sub-air knife 521 and the second sub-air knife 522 is configured as a stopper between the hydrofluoric acid cleaning chamber 200 and the ozone oxidation chamber 300 on the side of the supporting base where the film is provided A wall to separate the cleaning solution in the hydrofluoric acid cleaning chamber 200 from the ozone moisture in the ozone oxidation chamber 300.
  • the gas blown out by the first sub-air knife 521 and the second sub-air knife 522 can also make the hydrofluoric acid cleaning chamber 200 have a chemically inert gas, so that during the hydrofluoric acid cleaning process, non- Crystalline silicon is oxidized by air.
  • the second preset pressure can be designed and determined according to the actual application environment, and will not be done here. limited.
  • first sub-air knife 521 and the second sub-air knife 522 may be basically the same as the structure in the prior art, which should be understood by those of ordinary skill in the art, and will not be repeated here and should not be used as Restrictions on this disclosure.
  • the direction of the gas blown by the first sub-air knife 521 is perpendicular to the carrier base
  • a second preset angle ⁇ between the directions of the stage 400, so that the gas blown by the first sub air knife 521 is inclined toward the hydrofluoric acid cleaning chamber 200. This can further prevent the cleaning solution in the hydrofluoric acid cleaning chamber 200 from entering the ozone oxidation chamber 300.
  • the second preset included angle ⁇ can be designed and determined according to the actual application environment, and is not limited herein.
  • the direction of the gas blown by the second sub-air knife 522 is perpendicular to the carrier base
  • the third preset angle ⁇ can be designed and determined according to the actual application environment, and is not limited herein.
  • first sub air knife 521 and the second sub air knife 522 may be closely arranged to separate the hydrofluoric acid cleaning chamber 200 and the ozone oxidation chamber 300.
  • the thin film surface treatment device may further include: an ozone cleaning chamber 700.
  • the outlet 710 of the ozone cleaning chamber 700 is connected to the inlet 120 of the hydrofluoric acid etching chamber 100.
  • the ozone cleaning chamber 700 is configured to use ozone water to remove impurities on the film surface.
  • the outlet 710 of the ozone cleaning chamber 700 and the inlet 120 of the hydrofluoric acid etching chamber 100 are connected through a third air knife 530 and a third baffle 630.
  • the third air knife 530 is located on the side of the carrier base 400 where the film is provided, and the third baffle 630 is located on the side of the carrier base 400 that faces away from the film to etch the chamber 100 and ozone cleaning chamber 700 with hydrofluoric acid Disconnected.
  • the third air knife 530 is configured to blow out a chemically inert gas at a fourth preset pressure, separating the hydrofluoric acid etching chamber 100 and the ozone cleaning chamber 700.
  • the structure of the third air knife may be basically the same as the structure in the prior art, which should be understood by those of ordinary skill in the art, and will not be repeated here, nor should it be used as a limitation to the present disclosure.
  • the fourth preset pressure can be designed and determined according to the actual application environment, and is not limited herein.
  • the film is an amorphous silicon film
  • the chemically inert gas is nitrogen
  • the base substrate on which the amorphous silicon thin film is formed is set on the carrier base 400 of the ozone cleaning chamber 700, and ozone water is generated in the ozone cleaning chamber 700 to apply ozone water to the organic matter on the surface of the amorphous silicon thin film
  • a removal process is performed to remove organic substances that may remain on the surface of the amorphous silicon thin film. In this step, an uneven silicon oxide layer may be formed on the surface of the amorphous silicon thin film.
  • step (2) Pass the base substrate that has passed step (1) through the third air knife 530. Since the third air knife 530 can blow out nitrogen gas with a fourth preset pressure, the amorphous silicon thin film on the base substrate can be dried.
  • step (3) The base substrate after step (2) is set on the carrier base 400 of the hydrofluoric acid etching chamber 100, and hydrofluoric acid is generated in the hydrofluoric acid etching chamber 100 to use hydrofluoric acid
  • the surface of the amorphous silicon film is etched to etch away the silicon oxide layer on the surface of the amorphous silicon film.
  • the first air knife 510 can blow out nitrogen gas at a first preset pressure, the surface of the amorphous silicon film after the etching treatment is dried with nitrogen gas to remove possible residual hydrofluoric acid. Moreover, this can also prevent the oxidation of the surface of the amorphous silicon film by air.
  • the base substrate after step (4) is set on the carrier base 400 of the hydrofluoric acid cleaning chamber 200, and an aqueous solution is generated in the hydrofluoric acid cleaning chamber 200 to use the aqueous solution to pass the step (4)
  • the hydrofluoric acid on the surface of the amorphous silicon film is cleaned to remove the residual hydrofluoric acid on the surface of the amorphous silicon film, which can avoid excessive etching of the amorphous silicon caused by the residual hydrofluoric acid.
  • a water film can be provided on the surface of the amorphous silicon thin film, thereby further ensuring the purity of the process.
  • step (5) The base substrate that has passed step (5) passes through the first sub-air knife 521 and the second sub-air knife 522 in this order. Since the first sub-air knife 521 can blow nitrogen at the second preset pressure and the second sub-air knife 522 can blow nitrogen at the third preset pressure, to use nitrogen to dry the surface of the amorphous silicon film after cleaning To remove residual aqueous solution.
  • the supporting base may be an automatically rotating base or a manually rotating base, which is not limited herein.
  • the film surface treatment method and the film surface treatment equipment provided by the embodiments of the present disclosure can etch away the substances on the film surface by using hydrofluoric acid to etch the film surface.
  • the cleaning solution is used to clean the hydrofluoric acid on the surface of the film after the etching process to remove the residual hydrofluoric acid on the surface of the film, which can avoid the excessive etching of the film caused by the residual hydrofluoric acid.
  • ozone water is used to oxidize the surface of the film after the cleaning treatment, so that a dense and uniform oxide layer can be formed on the surface of the film. Therefore, when performing the ELA process, the ELA process effect can be improved.

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Abstract

一种薄膜表面处理方法及薄膜表面处理设备，通过采用氢氟酸对薄膜表面进行刻蚀处理，可以将薄膜表面具有的物质刻蚀掉。采用清洗溶液对经过刻蚀处理后的薄膜表面的氢氟酸进行清洗处理，以去除薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致薄膜过度刻蚀的情况。这样采用臭氧水对经过清洗处理后的薄膜表面进行氧化处理，可以使薄膜表面形成致密且均匀的氧化层。从而在进行ELA工艺时，可以提高ELA工艺效果。

Description

薄膜表面处理方法及薄膜表面处理设备
相关申请的交叉引用
本公开要求在2019年01月08日提交中国专利局、申请号为201910014948.5、申请名称为“薄膜表面处理方法及薄膜表面处理设备”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，特别涉及一种薄膜表面处理方法及薄膜表面处理设备。
背景技术
低温多晶硅薄膜晶体管(Low Temperature Poly-silicon Thin Film Transistor，LTPS TFT)工艺中，通常会涉及将非晶硅(Amorphous Silicon，a-Si)经过准分子激光退火(Excimer Laser Annealing，ELA)工艺转变成多晶硅(Polycrystalline Silicon，p-Si)的过程。为了提高ELA工艺效果，一般在进行ELA工艺之前需要对非晶硅薄膜表面进行预处理，以使非晶硅薄膜表面生成一层氧化硅薄膜。然而，在进行预处理过程中，会使得非晶硅薄膜表面出现不同程度的不均匀的痕迹(即Mura)现象。该Mura的存在会导致生成的氧化硅薄膜的均匀性不佳，从而影响ELA工艺效果，进而对薄膜晶体管的性能造成不利影响。
发明内容
本公开实施例提供了一种薄膜表面处理方法，包括：
采用氢氟酸对所述薄膜表面进行刻蚀处理；
采用清洗溶液对经过所述刻蚀处理后的薄膜表面的氢氟酸进行清洗处理；
采用臭氧水对经过所述清洗处理后的薄膜表面进行氧化处理，使所述薄 膜表面形成氧化层。
可选地，在本公开实施例中，在进行刻蚀处理之后，且进行清洗处理之前，还包括：采用化学性质不活泼的气体对经过所述刻蚀处理后的薄膜表面进行干燥处理。
可选地，在本公开实施例中，在进行清洗处理后，且进行氧化处理之前，还包括：采用化学性质不活泼的气体对经过所述清洗处理后的薄膜表面进行干燥处理。
可选地，在本公开实施例中，所述清洗溶液包括水溶液。
可选地，在本公开实施例中，在所述采用氢氟酸对所述薄膜表面进行刻蚀处理之前，还包括：
采用所述臭氧水对所述薄膜表面的杂质进行去除处理。
相应地，本公开实施例还提供了一种薄膜表面处理设备，包括：氢氟酸刻蚀腔室、氢氟酸清洗腔室、臭氧氧化腔室以及承载基台；
所述氢氟酸刻蚀腔室的出口与所述氢氟酸清洗腔室的入口连接，所述氢氟酸清洗腔室的出口与所述臭氧氧化腔室的入口连接，所述承载基台贯穿所述氢氟酸刻蚀腔室及其出口、贯穿所述氢氟酸清洗腔室及其入口和出口，以及贯穿所述臭氧氧化腔室及其入口；
所述承载基台被配置为承载形成有所述薄膜的衬底基板；
所述氢氟酸刻蚀腔室被配置为采用氢氟酸对所述薄膜表面进行刻蚀处理；
所述氢氟酸清洗腔室被配置为采用清洗溶液对经过所述刻蚀处理后的薄膜表面的氢氟酸进行清洗处理；
所述臭氧氧化腔室被配置为采用臭氧水对经过所述清洗处理后的薄膜表面进行氧化处理，使所述薄膜表面形成氧化层。
可选地，在本公开实施例中，所述氢氟酸刻蚀腔室的出口与所述氢氟酸清洗腔室的入口通过第一气刀和第一挡板连接；其中，所述第一气刀位于所述承载基台设置所述薄膜的一侧，所述第一挡板位于所述承载基台背离所述薄膜的一侧；
所述第一气刀被配置为吹出第一预设压力的化学性质不活泼的气体，将所述氢氟酸刻蚀腔室和所述氢氟酸清洗腔室分隔开，以及对经过所述氢氟酸刻蚀处理后的薄膜表面进行干燥处理。
可选地，在本公开实施例中，所述第一气刀吹出的气体的方向与垂直于所述承载基台的方向之间具有第一预设夹角，以使所述第一气刀吹出的气体向所述氢氟酸刻蚀腔室倾斜。
可选地，在本公开实施例中，所述氢氟酸清洗腔室的出口与所述臭氧氧化腔室的入口通过第二气刀和第二挡板连接；其中，所述第二气刀位于所述承载基台设置所述薄膜的一侧，所述第二挡板位于所述承载基台背离所述薄膜的一侧；
所述第二气刀被配置为吹出第二预设压力的化学性质不活泼的气体，将所述氢氟酸清洗腔室与所述臭氧氧化腔室分隔开，以及对经过清洗处理后的薄膜表面进行干燥处理。
可选地，在本公开实施例中，所述第二气刀包括：相互独立的第一子气刀和第二子气刀；
所述第一子气刀靠近所述氢氟酸清洗腔室的出口设置，所述第二子气刀靠近所述臭氧氧化腔室的入口设置。
可选地，在本公开实施例中，所述第一子气刀吹出的气体的方向与垂直于所述承载基台的方向之间具有第二预设夹角，以使所述第一子气刀吹出的气体向所述氢氟酸清洗腔室倾斜。
可选地，在本公开实施例中，所述第二子气刀吹出的气体的方向与垂直于所述承载基台的方向之间具有第三预设夹角，以使所述第二子气刀吹出的气体向所述臭氧氧化腔室倾斜。
附图说明
图1为本公开实施例提供的薄膜表面处理方法的流程图；
图2为本公开实施例提供的薄膜表面处理设备的一种结构示意图；
图3为本公开实施例提供的薄膜表面处理设备的另一种结构示意图。
具体实施方式
为了使本公开的目的，技术方案和优点更加清楚，下面结合附图，对本公开实施例提供的薄膜表面处理方法及薄膜表面处理设备的具体实施方式进行详细地说明。应当理解，下面所描述的优选实施例仅用于说明和解释本公开，并不用于限定本公开。并且在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。
在LTPS TFT工艺中，一般是在衬底基板上制备LTPS TFT。其中，在制备LTPS TFT中的有源层时，通常会涉及将非晶硅经过ELA工艺转变成多晶硅的过程。然而，在衬底基板上制备非晶硅薄膜后，一般在进行ELA工艺之前需要对非晶硅薄膜表面进行预处理，以使非晶硅薄膜表面生成一层致密且均匀的氧化硅薄膜。该氧化硅薄膜可以在ELA工艺中有效吸收激光能量，充分熔融a-Si，以及在ELA工艺中充当非晶硅在熔融状态时的保温层，以使非晶硅形成具有一定晶粒尺寸且均一性较好的多晶硅。
一般对非晶硅薄膜表面进行预处理方法可以包括如下步骤：(1)采用臭氧水对非晶硅薄膜表面的杂质进行去除处理，以去除非晶硅薄膜表面上可能残留的有机物。该步骤中可能还会使非晶硅薄膜表面形成不均匀的氧化硅层。(2)(2)采用氢氟酸对非晶硅薄膜表面进行刻蚀处理，以去除非晶硅薄膜表面形成的氧化硅层。(3)采用臭氧水对非晶硅薄膜表面进行氧化处理，使非晶硅薄膜表面形成致密且均匀的氧化硅层。然而，在步骤(2)完成至步骤(3)开始的时间段内，由于干燥能力有限，因此可能会使非晶硅薄膜表面残留有氢氟酸。该残留的氢氟酸可能会导致非晶硅过度刻蚀的情况，从而导致非晶硅薄膜表面出现Mura现象。该Mura现象的存在会导致生成的氧化硅薄膜的均匀性不佳，从而影响ELA工艺效果，进而对薄膜晶体管的性能造成不利影 响。
基于此，本公开实施例提供了一种薄膜表面处理方法，被配置为避免非晶硅薄膜表面出现Mura现象。
结合图1所示，本公开实施例提供的薄膜表面处理方法，可以包括如下步骤：
S101、采用氢氟酸对薄膜表面进行刻蚀处理；
S102、采用清洗溶液对经过刻蚀处理后的薄膜表面的氢氟酸进行清洗处理；
S103、采用臭氧水对经过清洗处理后的薄膜表面进行氧化处理，使薄膜表面形成氧化层。
本公开实施例提供的薄膜表面处理方法，通过采用氢氟酸对薄膜表面进行刻蚀处理，可以将薄膜表面具有的物质刻蚀掉。采用清洗溶液对经过刻蚀处理后的薄膜表面的氢氟酸进行清洗处理，以去除薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致薄膜过度刻蚀的情况。这样采用臭氧水对经过清洗处理后的薄膜表面进行氧化处理，可以使薄膜表面形成致密且均匀的氧化层。从而在进行ELA工艺时，可以提高ELA工艺效果。
在具体实施时，在本公开实施例中，薄膜可以为非晶硅薄膜。这样通过采用氢氟酸对非晶硅薄膜表面进行刻蚀处理，可以将非晶硅薄膜表面具有的物质刻蚀掉，例如将不均匀的氧化硅薄膜刻蚀掉，以将非晶硅裸露出来。采用清洗溶液对经过刻蚀处理后的非晶硅薄膜表面的氢氟酸进行清洗处理，以去除非晶硅薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致非晶硅过度刻蚀的情况。这样采用臭氧水对经过清洗处理后的非晶硅薄膜表面进行氧化处理，可以使非晶硅薄膜表面形成致密且均匀的氧化硅层。从而在进行ELA工艺时，可以提高ELA工艺效果，进而提高制备成的薄膜晶体管的性能。一般，在进行氧化处理之后，会采用ELA工艺将非晶硅薄膜转变为多晶硅薄膜。在形成多晶硅薄膜之后，还会在多晶硅薄膜上形成栅绝缘层。为了优化形成的多晶硅薄膜的表面，一般在形成多晶硅薄膜之后，且在形成栅绝缘层之前， 还可以对多晶硅薄膜的表面进行预处理。在具体实施时，在本公开实施例中，薄膜也可以为采用非晶硅薄膜转变为的多晶硅薄膜。这样通过采用氢氟酸对多晶硅薄膜表面进行刻蚀处理，可以将多晶硅薄膜表面具有的物质刻蚀掉，以将多晶硅裸露出来。采用清洗溶液对经过刻蚀处理后的多晶硅薄膜表面的氢氟酸进行清洗处理，以去除多晶硅薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致多晶硅过度刻蚀的情况。这样采用臭氧水对经过清洗处理后的多晶硅薄膜表面进行氧化处理，可以使多晶硅薄膜表面形成致密且均匀的氧化硅层，从而可以提高制备成的薄膜晶体管的性能。下面均以薄膜可以为非晶硅薄膜为例，进行说明。
在具体实施时，清洗溶液被配置为清洗氢氟酸，例如可以为水溶液。这样不仅可以达到清洗效果，并且还可以降低成本。进一步地，水溶液可以为超纯水。当然，在实际应用中，清洗溶液可以根据实际应用环境来设计确定，在此不作限定。
进一步地，在具体实施时，在本公开实施例中，在进行刻蚀处理之后，且进行清洗处理之前，还可以包括：采用化学性质不活泼的气体对经过刻蚀处理后的薄膜表面进行干燥处理。这样可以进一步去除残留的氢氟酸，进一步可以避免残留的氢氟酸导致非晶硅薄膜过度刻蚀的情况。并且，由于采用化学性质不活泼的气体，这样还可以避免刻蚀处理之后的薄膜与空气接触而造成氧化的情况。
进一步地，在具体实施时，在本公开实施例中，在进行清洗处理后，且进行氧化处理之前，还可以包括：采用化学性质不活泼的气体对经过清洗处理后的薄膜表面进行干燥处理。这样可以去除清洗溶液，以及还可以避免刻蚀处理之后的非晶硅薄膜与空气接触而造成氧化的情况。
进一步地，在具体实施时，化学性质不活泼的气体可以包括惰性气体和氮气中的至少一种。
在制备过程中，薄膜表面上可能残留有例如有机物等杂质。在具体实施时，在本公开实施例中，在采用氢氟酸对薄膜表面进行刻蚀处理之前，还可 以包括：采用臭氧水对薄膜表面的杂质进行去除处理。这样可以去除非晶硅薄膜表面上可能残留的杂质(例如有机物)。当然，残留的杂质还可以为其他物质，这需要根据实际应用环境来设计确定，在此不作限定。
下面通过一具体实施例列举本公开实施例提供的薄膜表面处理方法，但读者应知，其具体过程不局限于此。其中，以薄膜为非晶硅薄膜，以及化学性质不活泼的气体为氮气为例进行说明。
本公开实施例提供的薄膜表面处理方法可以包括如下步骤：
(1)采用臭氧水对非晶硅薄膜表面的有机物进行去除处理，以将非晶硅薄膜表面上可能残留的有机物去除掉。该步骤中可能还会使非晶硅薄膜表面形成不均匀的氧化硅层。
(2)采用氢氟酸对非晶硅薄膜表面进行刻蚀处理，以将非晶硅薄膜表面的氧化硅层刻蚀掉。
(3)采用氮气对经过刻蚀处理后的非晶硅薄膜表面进行干燥处理，以去除可能残留的氢氟酸。并且，这样还可以避免空气对非晶硅薄膜表面氧化。
(4)采用水溶液对经过步骤(3)中的干燥处理后的非晶硅薄膜表面的氢氟酸进行清洗处理，以去除非晶硅薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致非晶硅过度刻蚀的情况。并且还可以使非晶硅薄膜表面具有一层水膜，从而可以进一步保证工艺的纯净性。
(5)采用氮气对经过清洗处理后的非晶硅薄膜表面进行干燥处理，以去除残留的水溶液。
(6)采用臭氧水对经过步骤(5)中的干燥处理后的非晶硅薄膜表面进行氧化处理，可以使非晶硅薄膜表面形成致密且均匀的氧化硅层。从而在进行ELA工艺时，可以提高ELA工艺效果，进而提高制备成的薄膜晶体管的性能。
基于同一发明构思，本公开实施例还提供了一种薄膜表面处理设备，如图2所示，可以包括：氢氟酸刻蚀腔室100、氢氟酸清洗腔室200、臭氧氧化腔室300以及承载基台400；其中，氢氟酸刻蚀腔室100的出口110与氢氟酸 清洗腔室200的入口210连接，氢氟酸清洗腔室200的出口220与臭氧氧化腔室300的入口310连接，承载基台400贯穿氢氟酸刻蚀腔室100及其出口110、贯穿氢氟酸清洗腔室200及其入口210和出口220，以及贯穿臭氧氧化腔室300及其入口310；其中，承载基台400被配置为承载形成有薄膜的衬底基板。
氢氟酸刻蚀腔室100采用氢氟酸对薄膜表面进行刻蚀处理。
氢氟酸清洗腔室200被配置为采用清洗溶液对经过刻蚀处理后的薄膜表面的氢氟酸进行清洗处理。
臭氧氧化腔室300被配置为采用臭氧水对经过清洗处理后的薄膜表面进行氧化处理，使薄膜表面形成氧化层。
本公开实施例提供的薄膜表面处理设备，通过将形成有上述薄膜的衬底基板设置于承载基台上，并依次将该衬底基板经过氢氟酸刻蚀腔室、氢氟酸清洗腔室以及臭氧氧化腔室；其中，在衬底基板处于氢氟酸刻蚀腔室中时，可以采用氢氟酸对薄膜表面进行刻蚀处理。将薄膜表面具有的物质刻蚀掉。在衬底基板处于氢氟酸清洗腔室中时，可以采用清洗溶液对经过刻蚀处理后的薄膜表面的氢氟酸进行清洗处理，以去除薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致薄膜过度刻蚀的情况。在衬底基板处于臭氧氧化腔室中时，可以采用臭氧水对经过清洗处理后的薄膜表面进行氧化处理，可以使薄膜表面形成致密且均匀的氧化层。从而在进行ELA工艺时，可以提高ELA工艺效果。
一般，气刀是一种专门设计用来吹出强劲高速的气流以吹除灰尘、吹干水渍、降温冷却的设备。并且气刀吹出的气流可以由高强度，均匀层流气流组成。在具体实施时，在本公开实施例中，如图2所示，氢氟酸刻蚀腔室100的出口110与氢氟酸清洗腔室200的入口210通过第一气刀510和第一挡板610连接。其中，第一气刀510位于承载基台400设置薄膜的一侧，第一挡板610位于承载基台400背离薄膜的一侧，以将氢氟酸刻蚀腔室100和氢氟酸清洗腔室200隔断开。其中，第一气刀510被配置为吹出第一预设压力的化学 性质不活泼的气体，将氢氟酸刻蚀腔室100和氢氟酸清洗腔室200分隔开，以及对经过氢氟酸刻蚀处理后的薄膜表面进行干燥处理。具体地，第一气刀的结构可以与现有技术中的结构基本相同，为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。
在具体实施时，第一气刀吹出的气体被配置为作为承载基台设置薄膜一侧的氢氟酸刻蚀腔室100和氢氟酸清洗腔室200之间的挡墙，以将氢氟酸刻蚀腔室100中的氢氟酸和氢氟酸清洗腔室200中的清洗溶液分隔开。并且，可以避免氢氟酸刻蚀腔室100和氢氟酸清洗腔室200中进入空气，从而可以避免非晶硅薄膜从氢氟酸刻蚀腔室100进入氢氟酸清洗腔室200的过程中被空气氧化。并且，第一气刀吹出的气体还可以使氢氟酸清洗腔室200中具有化学性质不活泼的气体，从而在对氢氟酸清洗过程中，可以避免非晶硅被空气氧化。在实际应用中，由于不同应用环境对第一气刀吹出的气体的压力的需求不同，因此第一预设压力可以根据实际应用环境来设计确定，在此不作限定。
进一步地，为了避免氢氟酸刻蚀腔室100中的氢氟酸进入氢氟酸清洗腔室200，在具体实施时，如图2所示，第一气刀510吹出的气体的方向与垂直于承载基台的方向之间具有第一预设夹角β，以使第一气刀510吹出的气体向氢氟酸刻蚀腔室100倾斜。这样可以进一步避免氢氟酸刻蚀腔室100中的氢氟酸进入氢氟酸清洗腔室200。在实际应用中，由于不同应用环境对第一预设夹角β的需求不同，因此第一预设夹角β可以根据实际应用环境来设计确定，在此不作限定。
在具体实施时，在本公开实施例中，如图2所示，氢氟酸清洗腔室200的出口220与臭氧氧化腔室300的入口310通过第二气刀520和第二挡板620连接；其中，第二气刀520位于承载基台400设置薄膜的一侧，第二挡板620位于承载基台400背离薄膜的一侧，以将臭氧氧化腔室300和氢氟酸清洗腔室200隔断开。其中，第二气刀520被配置为吹出第二预设压力的化学性质不活泼的气体，将承载基台设置薄膜一侧的氢氟酸清洗腔室200与臭氧氧化 腔室300分隔开，以及对经过清洗处理后的薄膜表面进行干燥处理。进一步地，第二气刀520可以包括：相互独立的第一子气刀521和第二子气刀522；其中，第一子气刀521靠近氢氟酸清洗腔室200的出口220设置，第二子气刀522靠近臭氧氧化腔室300的入口310设置。
在具体实施时，第一子气刀521和第二子气刀522吹出的气体被配置为作为承载基台设置薄膜一侧的氢氟酸清洗腔室200和臭氧氧化腔室300之间的挡墙，以将氢氟酸清洗腔室200中的清洗溶液和臭氧氧化腔室300中的臭氧水分隔开。并且，可以避免臭氧氧化腔室300和氢氟酸清洗腔室200中进入空气，从而可以避免非晶硅薄膜从氢氟酸清洗腔室200进入臭氧氧化腔室300的过程中被空气氧化。并且，第一子气刀521和第二子气刀522吹出的气体还可以使氢氟酸清洗腔室200中具有化学性质不活泼的气体，从而在对氢氟酸清洗过程中，可以避免非晶硅被空气氧化。在实际应用中，由于不同应用环境对第一子气刀521和第二子气刀522吹出的气体的压力的需求不同，因此第二预设压力可以根据实际应用环境来设计确定，在此不作限定。并且，第一子气刀521和第二子气刀522的结构可以与现有技术中的结构基本相同，为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。
进一步地，为了避免氢氟酸清洗腔室200中的清洗溶液进入臭氧氧化腔室300，在具体实施时，如图2所示，第一子气刀521吹出的气体的方向与垂直于承载基台400的方向之间具有第二预设夹角γ，以使第一子气刀521吹出的气体向氢氟酸清洗腔室200倾斜。这样可以进一步避免氟酸清洗腔室200中的清洗溶液进入臭氧氧化腔室300。在实际应用中，由于不同应用环境对第二预设夹角γ的需求不同，因此第二预设夹角γ可以根据实际应用环境来设计确定，在此不作限定。
进一步地，为了避免臭氧氧化腔室300中的臭氧水进入氢氟酸清洗腔室200，在具体实施时，如图2所示，第二子气刀522吹出的气体的方向与垂直于承载基台400的方向之间具有第三预设夹角θ，以使第二子气刀522吹出 的气体向臭氧氧化腔室300倾斜。这样可以进一步避免臭氧氧化腔室300中的臭氧水进入氢氟酸清洗腔室200。在实际应用中，由于不同应用环境对第三预设夹角θ的需求不同，因此第三预设夹角θ可以根据实际应用环境来设计确定，在此不作限定。
进一步地，可以使第一子气刀521和第二子气刀522紧密排列，以将氢氟酸清洗腔室200和臭氧氧化腔室300间隔开。
进一步地，在具体实施时，如图3所示，薄膜表面处理设备还可以包括：臭氧清洗腔室700。该臭氧清洗腔室700的出口710与氢氟酸刻蚀腔室100的入口120连接。该臭氧清洗腔室700被配置为采用臭氧水对薄膜表面的杂质进行去除处理。进一步地，该臭氧清洗腔室700的出口710与氢氟酸刻蚀腔室100的入口120通过第三气刀530和第三挡板630连接。其中，第三气刀530位于承载基台400设置薄膜的一侧，第三挡板630位于承载基台400背离薄膜的一侧，以将氢氟酸刻蚀腔室100和臭氧清洗腔室700隔断开。其中，第三气刀530被配置为吹出第四预设压力的化学性质不活泼的气体，将氢氟酸刻蚀腔室100和臭氧清洗腔室700分隔开。具体地，第三气刀的结构可以与现有技术中的结构基本相同，为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。在实际应用中，由于不同应用环境对第三气刀吹出的气体的压力的需求不同，因此第四预设压力可以根据实际应用环境来设计确定，在此不作限定。
下面通过一具体实施例列举采用本公开实施例提供的薄膜表面处理设备的工作过程，但读者应知，其具体过程不局限于此。其中，以薄膜为非晶硅薄膜，以及化学性质不活泼的气体为氮气为例进行说明。
本公开实施例提供的薄膜表面处理设备的工作过程可以包括如下步骤：
(1)将形成有非晶硅薄膜的衬底基板设置于臭氧清洗腔室700的承载基台400上，臭氧清洗腔室700中产生臭氧水，以采用臭氧水对非晶硅薄膜表面的有机物进行去除处理，以将非晶硅薄膜表面上可能残留的有机物去除掉。该步骤中可能还会使非晶硅薄膜表面形成不均匀的氧化硅层。
(2)将经过步骤(1)的衬底基板经过第三气刀530。由于第三气刀530可以吹出第四预设压力的氮气，从而可以对衬底基板上的非晶硅薄膜进行干燥处理。
(3)将经过步骤(2)的衬底基板设置于氢氟酸刻蚀腔室100的承载基台400上，氢氟酸刻蚀腔室100中产生氢氟酸，以采用氢氟酸对非晶硅薄膜表面进行刻蚀处理，以将非晶硅薄膜表面的氧化硅层刻蚀掉。
(4)将经过步骤(3)的衬底基板经过第一气刀510。由于第一气刀510可以吹出第一预设压力的氮气，以采用氮气对经过刻蚀处理后的非晶硅薄膜表面进行干燥处理，以去除可能残留的氢氟酸。并且，这样还可以避免空气对非晶硅薄膜表面氧化。
(5)将经过步骤(4)的衬底基板设置于氢氟酸清洗腔室200的承载基台400上，氢氟酸清洗腔室200中产生水溶液，以采用水溶液对经过步骤(4)中的干燥处理后的非晶硅薄膜表面的氢氟酸进行清洗处理，以去除非晶硅薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致非晶硅过度刻蚀的情况。并且还可以使非晶硅薄膜表面具有一层水膜，从而可以进一步保证工艺的纯净性。
(6)将经过步骤(5)的衬底基板依次经过第一子气刀521和第二子气刀522。由于第一子气刀521可以吹出第二预设压力的氮气和第二子气刀522可以吹出第三预设压力的氮气，以采用氮气对经过清洗处理后的非晶硅薄膜表面进行干燥处理，以去除残留的水溶液。
(7)采用臭氧水对经过步骤(6)中的干燥处理后的非晶硅薄膜表面进行氧化处理，可以使非晶硅薄膜表面形成致密且均匀的氧化硅层。从而在进行ELA工艺时，可以提高ELA工艺效果，进而提高制备成的薄膜晶体管的性能。
需要说明的是，承载基台可以为自动转动的基台，或者也可以为手动转动的基台，在此不作限定。
本公开实施例提供的薄膜表面处理方法及薄膜表面处理设备，通过采用 氢氟酸对薄膜表面进行刻蚀处理，可以将薄膜表面具有的物质刻蚀掉。采用清洗溶液对经过刻蚀处理后的薄膜表面的氢氟酸进行清洗处理，以去除薄膜表面残留的氢氟酸，可以避免残留的氢氟酸导致薄膜过度刻蚀的情况。这样采用臭氧水对经过清洗处理后的薄膜表面进行氧化处理，可以使薄膜表面形成致密且均匀的氧化层。从而在进行ELA工艺时，可以提高ELA工艺效果。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (12)

  1. 一种薄膜表面处理方法，其中，包括：
    采用氢氟酸对所述薄膜表面进行刻蚀处理；
    采用清洗溶液对经过所述刻蚀处理后的薄膜表面的氢氟酸进行清洗处理；
    采用臭氧水对经过所述清洗处理后的薄膜表面进行氧化处理，使所述薄膜表面形成氧化层。
  2. 如权利要求1所述的薄膜表面处理方法，其中，在进行刻蚀处理之后，且进行清洗处理之前，还包括：采用化学性质不活泼的气体对经过所述刻蚀处理后的薄膜表面进行干燥处理。
  3. 如权利要求1所述的薄膜表面处理方法，其中，在进行清洗处理后，且进行氧化处理之前，还包括：采用化学性质不活泼的气体对经过所述清洗处理后的薄膜表面进行干燥处理。
  4. 如权利要求1-3任一项所述的薄膜表面处理方法，其中，所述清洗溶液包括水溶液。
  5. 如权利要求1-3任一项所述的薄膜表面处理方法，其中，在所述采用氢氟酸对所述薄膜表面进行刻蚀处理之前，还包括：
    采用所述臭氧水对所述薄膜表面的杂质进行去除处理。
  6. 一种薄膜表面处理设备，其中，包括：氢氟酸刻蚀腔室、氢氟酸清洗腔室、臭氧氧化腔室以及承载基台；
    所述氢氟酸刻蚀腔室的出口与所述氢氟酸清洗腔室的入口连接，所述氢氟酸清洗腔室的出口与所述臭氧氧化腔室的入口连接，所述承载基台贯穿所述氢氟酸刻蚀腔室及其出口、贯穿所述氢氟酸清洗腔室及其入口和出口，以及贯穿所述臭氧氧化腔室及其入口；
    所述承载基台被配置为承载形成有所述薄膜的衬底基板；
    所述氢氟酸刻蚀腔室被配置为采用氢氟酸对所述薄膜表面进行刻蚀处理；
    所述氢氟酸清洗腔室被配置为采用清洗溶液对经过所述刻蚀处理后的薄 膜表面的氢氟酸进行清洗处理；
    所述臭氧氧化腔室被配置为采用臭氧水对经过所述清洗处理后的薄膜表面进行氧化处理，使所述薄膜表面形成氧化层。
  7. 如权利要求6所述的薄膜表面处理设备，其中，所述氢氟酸刻蚀腔室的出口与所述氢氟酸清洗腔室的入口通过第一气刀和第一挡板连接；其中，所述第一气刀位于所述承载基台设置所述薄膜的一侧，所述第一挡板位于所述承载基台背离所述薄膜的一侧；
    所述第一气刀被配置为吹出第一预设压力的化学性质不活泼的气体，将所述氢氟酸刻蚀腔室和所述氢氟酸清洗腔室分隔开，以及对经过所述氢氟酸刻蚀处理后的薄膜表面进行干燥处理。
  8. 如权利要求7所述的薄膜表面处理设备，其中，所述第一气刀吹出的气体的方向与垂直于所述承载基台的方向之间具有第一预设夹角，以使所述第一气刀吹出的气体向所述氢氟酸刻蚀腔室倾斜。
  9. 如权利要求6所述的薄膜表面处理设备，其中，所述氢氟酸清洗腔室的出口与所述臭氧氧化腔室的入口通过第二气刀和第二挡板连接；其中，所述第二气刀位于所述承载基台设置所述薄膜的一侧，所述第二挡板位于所述承载基台背离所述薄膜的一侧；
    所述第二气刀被配置为吹出第二预设压力的化学性质不活泼的气体，将所述氢氟酸清洗腔室与所述臭氧氧化腔室分隔开，以及对经过清洗处理后的薄膜表面进行干燥处理。
  10. 如权利要求9所述的薄膜表面处理设备，其中，所述第二气刀包括：相互独立的第一子气刀和第二子气刀；
    所述第一子气刀靠近所述氢氟酸清洗腔室的出口设置，所述第二子气刀靠近所述臭氧氧化腔室的入口设置。
  11. 如权利要求10所述的薄膜表面处理设备，其中，所述第一子气刀吹出的气体的方向与垂直于所述承载基台的方向之间具有第二预设夹角，以使所述第一子气刀吹出的气体向所述氢氟酸清洗腔室倾斜。
  12. 如权利要求10所述的薄膜表面处理设备，其中，所述第二子气刀吹出的气体的方向与垂直于所述承载基台的方向之间具有第三预设夹角，以使所述第二子气刀吹出的气体向所述臭氧氧化腔室倾斜。
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