WO2020140565A1 - 显示基板及其制备方法和显示装置 - Google Patents

显示基板及其制备方法和显示装置 Download PDF

Info

Publication number
WO2020140565A1
WO2020140565A1 PCT/CN2019/113012 CN2019113012W WO2020140565A1 WO 2020140565 A1 WO2020140565 A1 WO 2020140565A1 CN 2019113012 W CN2019113012 W CN 2019113012W WO 2020140565 A1 WO2020140565 A1 WO 2020140565A1
Authority
WO
WIPO (PCT)
Prior art keywords
display substrate
electrode layer
layer
light
base substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/113012
Other languages
English (en)
French (fr)
Inventor
唐国强
胡耀
汪杨鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US16/760,866 priority Critical patent/US11716888B2/en
Publication of WO2020140565A1 publication Critical patent/WO2020140565A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display substrate, a method of manufacturing the same, and a display device.
  • the color separation phenomenon of the color filter refers to the fact that when the light incident from the color filter (CF) of the display substrate is reflected by pixels of different colors, due to the different inclination angles of different pixels, the incident light The phenomenon of scattering occurs.
  • an embodiment of the present disclosure provides a display substrate, including a base substrate and a plurality of sub-pixels located on one side of the base substrate, at least one of the plurality of sub-pixels includes a first electrode layer, the first An electrode layer is configured to scatter incident light irradiated to the first electrode layer.
  • the display substrate further includes a flat layer between the base substrate and the first electrode layer, a side of the flat layer away from the base substrate includes a scattering structure, and the first The shape of an electrode layer is substantially the same as the shape of the scattering structure.
  • the thickness of the first electrode layer is substantially equal.
  • the scattering structure includes a plurality of grooves formed in at least a part of a region of the flat layer away from the base substrate.
  • the grooves include a plurality of interlaced grooves opened along the first direction and the second direction, and the grooves opened along the first direction are arranged at equal intervals, along the The grooves opened in the second direction are arranged at equal intervals, wherein the first direction and the second direction are different directions parallel to the base substrate.
  • the distance between two adjacent grooves is not less than the wavelength of red light.
  • the first direction and the second direction are perpendicular to each other.
  • the cross-sectional shape of the groove in a direction perpendicular to the display substrate is an arc, a parabola, a triangle, or a rectangle.
  • the plurality of sub-pixels include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and red, green, and blue light reflected by anodes of the red, green, and blue sub-pixels respectively Relatively uniform scattering in all directions.
  • the display substrate further includes a light-emitting layer on the first electrode layer and a second electrode layer on the light-emitting layer, and the thickness of the light-emitting layer is substantially equal throughout.
  • the display substrate further includes an encapsulation layer and a color filter on the encapsulation layer.
  • an embodiment of the present disclosure further provides a display device, including the display substrate according to any one of the above.
  • an embodiment of the present disclosure also provides a method for manufacturing a display substrate, including:
  • a plurality of sub-pixels are formed on the base substrate, wherein at least one of the plurality of sub-pixels includes a first electrode layer configured to scatter incident light irradiated to the first electrode layer.
  • the forming a plurality of sub-pixels on the base substrate includes:
  • a first electrode layer is formed on the scattering structure.
  • the shape of the first electrode layer is substantially the same as the shape of the scattering structure and the thickness of the first electrode layer is substantially the same everywhere.
  • the forming a scattering structure on the flat layer includes:
  • the exposed area of the flat layer is developed to form a plurality of grooves on the surface of the flat layer away from the base substrate.
  • the distance between the interference fringes of the double laser is not less than the wavelength of red light.
  • the second double laser interference exposure of the flat layer includes:
  • the base substrate is rotated 90 degrees in the plane where the base substrate is located, keeping the direction of the exposure light source unchanged, and performing double laser interference exposure on the flat layer.
  • the method further includes:
  • the thickness of the light-emitting layer is substantially equal
  • a second electrode layer is formed on the light-emitting layer.
  • Figure 1 is a schematic diagram of the principle of color separation phenomenon
  • FIG. 2 is a schematic diagram of the source and drain electrodes in the prior art
  • FIG. 3 is a schematic structural diagram of a flat layer in a display substrate according to some embodiments of the present disclosure
  • FIG. 4 is a schematic structural diagram of yet another flat layer in a display substrate according to some embodiments of the present disclosure.
  • FIG. 5 is a schematic structural diagram of yet another flat layer in a display substrate according to some embodiments of the present disclosure.
  • FIG. 6 is another perspective view of FIG. 3;
  • FIG. 7 is a schematic structural diagram of a display substrate according to some embodiments of the present disclosure.
  • FIG. 8 is a flowchart of a method for manufacturing a display substrate according to other embodiments of the present disclosure.
  • FIG. 9 is a schematic diagram of a dual light source exposure process in other embodiments of the present disclosure.
  • the thickness of the flat layer 101 around the hole will change, so the flat layer 101 will form a slope, which will result in the anode formed by the flat layer 101 102 tilted.
  • factors such as the routing of the source-drain electrode 103 may also cause the anode corresponding to the pixels of different colors to tilt.
  • the layout order is also different. This results in the oblique direction of the blue pixel 104 and the oblique directions of the red pixel 105 and the green pixel 106 being On the contrary, the direction of the light reflected by the anode of the red pixel 105 and the anode of the green pixel 106 is opposite to the direction of the light reflected by the anode of the blue pixel 104. For example, in FIG. 1, when red light and green light are reflected toward the left side of the incident light, blue light will be reflected toward the right side of the incident light.
  • This phenomenon of light rays of different colors reflecting differently is called a color separation phenomenon.
  • the present disclosure provides a display substrate.
  • the display substrate includes a flat layer 210 (Planarization, abbreviated as PLN) on the base substrate and a first electrode layer 220 on the flat layer 210.
  • PLN Planarization, abbreviated as PLN
  • the flat layer 210 may not be directly formed on the base substrate, and there may be some other functional film layers between the flat layer 210 and the base substrate.
  • the flat layer 210 may not be directly formed on the base substrate, and there may be some other functional film layers between the flat layer 210 and the base substrate.
  • the side of the flat layer 210 away from the base substrate includes a scattering structure, the first electrode layer 220 is located on the scattering structure, the thickness of the first electrode layer 220 is uniform throughout, and may also be understood as the thickness of the first electrode layer 220 throughout Is basically equal.
  • the shape of the first electrode layer 220 is also substantially the same as the shape of the scattering structure, so as to achieve the The light is scattered.
  • uniform and substantially equal in this embodiment refer to the thickness of the first electrode layer 220 under the condition of ignoring the slight differences that may exist due to factors such as production process It is equal everywhere, with a deviation of ⁇ 0.1%, preferably a deviation of ⁇ 0.01%.
  • the shape of the first electrode layer 220 is basically the same as the shape of the scattering structure, when light enters the first electrode layer 220 from the color filter (COE) on the encapsulation layer, due to The existence of the scattering structure makes the shape of the first electrode layer 220 substantially the same as that of the scattering structure, so that incident light can be scattered on the first electrode layer 220.
  • the red, green, and blue light reflected by the anodes of the pixels of different colors, such as red, green, and blue pixels can be scattered relatively uniformly in various directions, which can effectively reduce or eliminate the color separation phenomenon.
  • the scattering structure includes a plurality of grooves 211 formed in at least a part of the area of the side of the flat layer 210 away from the base substrate.
  • the scattering structure includes a plurality of grooves 211.
  • the grooves 211 may be opened only in a part of the flat layer 210.
  • the grooves 211 may be opened only in a part of the region where the dispersion phenomenon is serious. Form a scattering structure.
  • grooves 211 may be provided in the entire area of the side of the flat layer 210 away from the base substrate, that is, both ends of each groove 211 extend to the edges of the flat layer 210, It can reduce or eliminate the color separation that may occur in various areas of the display substrate.
  • the groove 211 includes a plurality of grooves 211 opened along the first direction and a plurality of grooves 211 opened along the second direction, wherein the first direction and the second direction are different directions parallel to the base substrate, so that The grooves opened in the first direction and the grooves opened in the second direction are staggered.
  • the grooves 211 opened in the first direction are arranged at equal intervals, and the grooves 211 opened in the second direction are arranged at equal intervals.
  • each groove 211 in this embodiment can be changed, for example, it can be various shapes such as a circular arc shape, a parabolic shape, a triangular shape, and a rectangular shape.
  • the shape of the groove 211 is substantially wavy.
  • the groove structure is substantially continuous sinusoidal or wavy.
  • FIG. 6 is another perspective view of the view shown in FIG. 3, when a plurality of grooves 211 are formed on the surface of the flat layer 210, and a plurality of openings are provided in the first direction and the second direction A plurality of convex structures 212 will be formed on the surface of the flat layer 210.
  • first direction and the second direction Take the directions indicated by the two double arrows in FIG. 6 as the first direction and the second direction, respectively.
  • a plurality of grooves 211 are formed in the first direction and the second direction respectively.
  • the thickness of the area where the groove 211 is not provided in the flat layer 210 will be greater than the thickness of the area where the groove 211 is provided.
  • the unrestricted area of the groove 211 remains, forming a convex structure 212.
  • the distance between two adjacent grooves 211 is not less than the wavelength of red light.
  • the convex structure 212 has a scattering effect on incident light, and the distance between two adjacent grooves 211 is not less than the wavelength of red light. It should be understood that in visible light, the wavelength of red light is the longest, so as long as the distance between two adjacent grooves is not less than the wavelength of red light, incident light can be prevented from diffracting from one groove 211 to another One groove 211.
  • the distance between the grooves 211 refers to the distance between the same positions of different grooves 211, for example, the distance between the lowest points of two adjacent grooves 211, or as shown in FIGS. 3 to 6 The distance between the rightmost point of each groove in two adjacent grooves.
  • the wavelength of red light is about 620 to 760 nanometers, where the long-wavelength end wavelength in the visible spectrum is about 625 to 740 nanometers.
  • the red light wavelengths corresponding to the red pixels in different display substrates may have certain differences. For different display substrates, by controlling the distance between the raised structures 212 to be greater than the corresponding wavelength of red light, it is possible to prevent incident light from diffracting at the raised structures 212. When scattered light cannot be diffracted, it will pass multiple times After the reflection is eliminated, the color separation phenomenon is further reduced or eliminated.
  • the display substrate further includes a light emitting layer 230 (Electroluminescent Layer, abbreviated as EL) formed on the first electrode layer 220 and a second electrode layer 240 formed on the light emitting layer 230.
  • the thickness of the light emitting layer 230 is basically equal.
  • the materials of the light-emitting layer 230 and the second electrode layer 240 can refer to the existing light-emitting layer 230 and the second electrode layer 240, and are not further limited and described herein.
  • the shape of the light emitting layer 230 is similar to the first electrode layer 220.
  • the formation of the side of the second electrode layer 240 facing the first electrode layer 210 is also substantially the same as that of the first electrode layer 220, and each of its uneven structures substantially corresponds to the uneven structure on the scattering structure.
  • the distance between the first electrode layer 220 and the second electrode layer 240 is substantially equal, which can make the length of the formed microcavity structure uniform, and can also ensure the light emitting layer 230 Color shift, color gamut, efficiency and brightness will not be greatly affected.
  • This embodiment provides a display device, including any one of the above-mentioned display substrates. Since the technical solution of this embodiment includes all the technical solutions of the above embodiments, at least all the technical effects described above can be achieved, which will not be repeated here.
  • the display device may include but is not limited to a mobile phone, a tablet computer, an e-book reader, an MP3 player, an MP4 player, a digital camera, a laptop portable computer, a car computer, a desktop computer, a set-top box, a smart TV, At least one item in a wearable device.
  • This embodiment provides a method for manufacturing a display substrate.
  • the preparation method of the display substrate includes:
  • Step 801 Form a flat layer 210 on the base substrate.
  • the first electrode layer 220 is formed on the flat layer 210.
  • the above step 801 can refer to the existing process of forming the flat layer 210, and before forming the flat layer 210, some other functional film layers may be formed, that is, the flat layer 210 may not be directly formed on the surface of the base substrate, and First, some other functional film layers are formed on the base substrate, and then a flat layer 210 is formed on these functional film layers.
  • These functional film layers include, but are not limited to, a gate layer, a gate insulating layer, an active layer, and a source leakage
  • the functional film layers such as the polar layer, for details, reference may be made to the existing display substrates that may appear, which is not further limited and described herein.
  • preparation method of the display substrate further includes:
  • Step 802 Form a scattering structure on the flat layer 210.
  • the above step of forming the first electrode layer 220 on the flat layer 210 specifically includes:
  • Step 803 Form a first electrode layer 220 on the scattering structure, and the thickness of the first electrode layer 220 is substantially the same everywhere.
  • the main difference from the formation of the first electrode layer 220 in the existing display substrate is that the first electrode layer 220 in this embodiment is formed on the scattering structure, so that the shape of the formed first electrode layer 220 is also the same as The scattering structure is basically the same.
  • the incident light can be scattered on the first electrode layer 220, so that the red, green and blue
  • the red light, green light and blue light respectively reflected by the anodes of the pixels of various colors can be scattered relatively uniformly in all directions, which can effectively reduce or eliminate the color separation phenomenon.
  • step 802 includes:
  • the exposed area of the flat layer 210 is developed.
  • Double laser interference exposure refers to the process of exposing the interference fringes formed by the dual light sources through the grating. Through the double laser interference exposure, the light emitted by the two light sources can construct or destruct at different positions, and can form intermittent interference fringes. , And then develop the exposed area to form the corresponding structure.
  • the interference fringes of the first double laser interference exposure are along the first direction relative to the display substrate, and the second double laser interference fringes are along the second direction relative to the display substrate, and the first direction and the first The two directions are different directions parallel to the base substrate.
  • the two interference exposures actually form a grid-like exposure area.
  • developing the exposure area can make the remaining part of the surface of the flat layer 210 form an array arrangement
  • the dashed boundary above the flat layer 210 in FIG. 7 represents the original boundary of the flat layer 210
  • the solid boundary represents the boundary after the exposure and development processes.
  • the distance between the two adjacent interference fringes of the double laser is not less than the wavelength of red light.
  • the distance between the interference fringes can be achieved by controlling the wavelength of the light source, selecting gratings with different grating constants, adjusting the angle of the laser source, and changing the distance between the laser source and the substrate substrate, where the grating constant refers to the grating phase The distance between two adjacent slits.
  • the distance between the interference fringes corresponds to the distance between the flat layer 210 structures eliminated during development, the distance is equal to the distance between two adjacent grooves 211 in the first direction or the second direction Therefore, controlling the distance between two adjacent interference fringes is not less than the wavelength of red light, that is, the distance between two adjacent grooves 211 is not less than the wavelength of red light, which can avoid the formation of incident light after the groove is formed Diffraction occurs at the raised structure 212 of.
  • the convex structure of the array can be formed as a scattering structure.
  • the first direction and the second direction are substantially mutually vertical.
  • the above-mentioned second double laser interference exposure of the flat layer 210 includes: rotating the base substrate 90 degrees in the plane where the base substrate is located, keeping the direction of the exposure light source 400 unchanged, and flattening the flat The layer is exposed to double laser interference.
  • the base substrate can be rotated 90 degrees clockwise or counterclockwise in its plane, and then the direction of the exposure light source 400 is maintained Change, the second double laser interference exposure. In this way, it is possible to realize that the interference fringes of the first double laser interference exposure and the interference fringes of the second double laser interference exposure are perpendicular to each other, that is, the first direction and the second direction are perpendicular to each other.
  • rotating 90 degrees and being perpendicular to each other here means that, ignoring the possible systematic errors, the angle of rotation is basically equal to 90 degrees, so that the first direction and the second direction are as close to each other as possible Vertical state.
  • the manufacturing method of the display substrate further includes:
  • the thickness of the light-emitting layer 230 is substantially the same everywhere;
  • the second electrode layer 240 is formed on the light emitting layer 230.
  • a light-emitting layer 230 is further formed on the first electrode layer 220. Since the thickness of the formed first electrode layer 220 is substantially equal, the first electrode layer 220 is away from the flat layer 210. The shape of the side surface and the scattering structure are also substantially equal, so that when the thickness of the light emitting layer 230 is substantially equal, the surface shape of the light emitting layer 230 is substantially the same as the surface shape of the first electrode layer 220. In this way, after the second electrode layer 240 is formed on the surface of the light emitting layer 230, the distance between the formed second electrode layer 240 and the first electrode layer 220 is also substantially equal.
  • the distance between the first electrode layer 220 and the second electrode layer 240 is substantially equal, which can make the length of the formed microcavity structure uniform, and can also ensure the light emitting layer 230 Color shift, color gamut, efficiency and brightness will not be greatly affected.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示基板及其制备方法和显示装置。显示基板包括位于衬底基板上的平坦层（210）以及位于所述平坦层（210）上的第一电极层（220），所述平坦层（210）远离所述衬底基板的一侧包括散射结构，所述第一电极层（220）位于所述散射结构上，且所述第一电极层（220）各处的厚度基本相等。

Description

显示基板及其制备方法和显示装置
相关申请的交叉引用
本公开主张在2019年1月2日在中国提交的中国专利申请号No.201910001232.1的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示基板及其制备方法和显示装置。
背景技术
彩色滤光片的色分离现象指的是，由显示基板的彩色滤光片(Color Filter，缩写为CF)入射的光线经由不同颜色的像素反射时，由于不同的像素倾斜角度不同，导致入射光出现散射的现象。
发明内容
第一方面，本公开实施例提供了一种显示基板，包括衬底基板和位于衬底基板的一侧的多个子像素，所述多个子像素中的至少一个包含第一电极层，所述第一电极层被配置为将照射到所述第一电极层的入射光散射。
可选的，所述显示基板还包括位于所述衬底基板和所述第一电极层之间的平坦层，所述平坦层远离所述衬底基板的一侧包括散射结构，并且所述第一电极层的形状与所述散射结构的形状基本相同。
可选的，所述第一电极层各处的厚度基本相等。
可选的，所述散射结构包括开设于所述平坦层远离所述衬底基板的一侧的至少一部分区域内的多个凹槽。
可选的，所述凹槽包括沿第一方向和沿第二方向开设的多个互相交错的凹槽，沿所述第一方向开设的各所述凹槽是等间隔排布的，沿所述第二方向开设的各所述凹槽是等间隔排布的，其中，所述第一方向和所述第二方向为平行于所述衬底基板的不同方向。
可选的，相邻两个所述凹槽之间的距离不小于红光的波长。
可选的，所述第一方向和所述第二方向互相垂直。
可选的，所述凹槽在垂直于所述显示基板的方向上的截面形状是圆弧形、抛物线形、三角形或矩形。
可选的，所述多个子像素包括红色子像素、绿色子像素和蓝色子像素，所述红色子像素、绿色子像素和蓝色子像素的阳极分别反射的红光、绿光和蓝光能够相对均匀的向各个方向散射。
可选的，所述显示基板还包括位于所述第一电极层上的发光层和位于所述发光层上的第二电极层，所述发光层各处的厚度基本相等。
可选的，所述显示基板还包括封装层和位于封装层上的彩色滤光片。
第二方面，本公开实施例还提供了一种显示装置，包括上述任一项所述的显示基板。
第三方面，本公开实施例还提供了一种显示基板的制备方法，包括：
在衬底基板上形成多个子像素，其中，所述多个子像素中的至少一个包含第一电极层，所述第一电极层被配置为将照射到所述第一电极层的入射光散射。
可选的，所述在衬底基板上形成多个子像素包括：
在衬底基板上形成平坦层；
在所述平坦层上形成散射结构；以及
在所述散射结构上形成第一电极层，所述第一电极层的形状与所述散射结构的形状基本相同且所述第一电极层各处的厚度基本相等。
可选的，所述在所述平坦层上形成散射结构，包括：
对所述平坦层进行第一次双激光干涉曝光，其中，所述第一次双激光干涉的干涉条纹沿第一方向；
对所述平坦层进行第二次双激光干涉曝光，其中，所述第二次双激光干涉的干涉条纹沿第二方向，且所述第一方向和所述第二方向为平行于所述衬底基板的不同方向；
使所述平坦层的曝光区显影，以使所述平坦层远离所述衬底基板的表面形成多个凹槽。
可选的，所述第一次双激光干涉曝光和第二次双激光干涉曝光中过程，双激光的干涉条纹之间的距离不小于红光的波长。
可选的，所述对所述平坦层进行第二次双激光干涉曝光，包括：
使所述衬底基板在所述衬底基板所在的平面内旋转90度，保持曝光光源的方向不变，并对所述平坦层进行双激光干涉曝光。
可选的，在所述散射结构上形成第一电极层之后，还包括：
在所述第一电极层上形成发光层，所述发光层各处的厚度基本相等；以及
在所述发光层的上形成第二电极层。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对本公开实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获取其他的附图。
图1为色分离现象产生的原理示意图；
图2为现有技术中源漏电极的走线示意图；
图3为本公开的一些实施例的显示基板中一种平坦层的结构示意图；
图4为本公开的一些实施例的显示基板中又一种平坦层的结构示意图；
图5为本公开的一些实施例的显示基板中又一种平坦层的结构示意图；
图6为图3的又一视角视图；
图7为本公开的一些实施例的显示基板的结构示意图；
图8为本公开的另一些实施例的显示基板的制备方法的流程图；
图9为本公开的另一些实施例中双光源曝光工艺的示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创 造性劳动前提下所获取的所有其他实施例，都属于本公开保护的范围。
具体的，如图1所示，在平坦层(PLN)101上打孔时，会导致孔周围的平坦层101厚度变化，因此平坦层101会形成一个坡度，从而导致依托平坦层101形成的阳极102倾斜。此外，如图2所示，源漏电极103(Source&Drain，缩写为S/D)的走线等因素也可能导致不同颜色的像素对应的阳极倾斜。
一般来说，由于蓝色像素104的开口率大于红色像素105和绿色像素106，所以其排版顺序也有所不同，这导致蓝色像素104的倾斜方向和红色像素105以及绿色像素106的倾斜方向是相反的，所以红色像素105的阳极和绿色像素106的阳极反射的光线的方向与蓝色像素104的阳极反射的光线的方向是相反的。例如，在图1中，当红色光线和绿色光线向入射光的左侧反射时，蓝色的光线将向入射光的右侧反射。
这种不同颜色的光线向不同反射的现象称作色分离现象。
第一实施例：
本公开提供了一种显示基板。
如图3至图7所示，在一个实施例中，该显示基板包括位于衬底基板上的平坦层210(Planarization，缩写为PLN)以及位于平坦层210上的第一电极层220。
应当理解的是，该平坦层210可能并非直接形成于衬底基板上，平坦层210和衬底基板之间还可能存在一些其他功能膜层，具体可参考现有的及可能出现的显示基板，此处不作进一步限定和描述。
平坦层210远离衬底基板的一侧包括散射结构，第一电极层220位于散射结构上，第一电极层220各处的厚度是均匀的，也可以理解为第一电极层220各处的厚度是基本相等的。
由于第一电极层220位于散射结构上，且第一电极层220各处的厚度基本相等，所以第一电极层220的形状也与散射结构的形状基本相同，以实现通过第一电极层220对光线进行散射。
应当理解的是，本实施例中的“基本相同”指的是，在忽略由于生产工艺等因素导致可能存在的微小差异的条件下，可以认为第一电极层220的边缘与散射结构的边缘是处处对应平行的。
应当理解的是，本实施例中的“均匀”和“基本相等”指的是，在忽略由于生产工艺等因素导致可能存在的微小差异的条件下，可以认为第一电极层220各处的厚度是处处相等的，偏差为±0.1％，优选偏差为±0.01％。
这样，由于第一电极层220的形状与散射结构的形状基本相同，当光线由封装层上的彩色滤光片(color filter on encapsulation，缩写为COE)入射至第一电极层220处时，由于散射结构的存在使第一电极层220的形状与散射结构基本相同，使得入射光能在第一电极层220上发生散射。这样，不同颜色的像素，例如红、绿和蓝三种颜色的像素的阳极分别反射的红光、绿光和蓝光能够相对均匀的向各个方向散射，能够有效的减弱或消除色分离现象。
在一个具体实施方式中，散射结构包括开设于平坦层210远离衬底基板的一侧的至少一部分区域内的多个凹槽211。
本实施例中，散射结构包括多个凹槽211，实施时，该凹槽211可以仅开设于平坦层210的一部分区域，例如，根据设计经验仅在色散现象严重的部分区域开设凹槽211以形成散射结构。
在一个较佳的具体实施方式中，则可以在平坦层210远离衬底基板的一侧的全部区域开设凹槽211，即每一凹槽211的两端分别延伸至平坦层210的边缘处，能够降低或消除显示基板各个区域可能发生的色分离现象。
凹槽211包括沿第一方向开设的多个凹槽211和沿第二方向开设的多个凹槽211，其中，第一方向和第二方向为平行于衬底基板的不同方向，这样，沿第一方向开设的凹槽和沿第二方向开设的凹槽是交错设置的。
在第一方向上和第二方向上，且沿第一方向开设的各凹槽211等间隔排布，沿第二方向开设的各凹槽211等间隔排布。
如图3至图5所示，本实施例中各凹槽211的截面形状是可以变化的，例如可以是圆弧形、抛物线形、三角形、矩形等各种形状。
在一个具体实施方式中，如图3和图6所示，凹槽211的形状大致呈波浪形，当由侧向观察时，槽结构大致呈连续的正弦曲线状或波浪线状。
如图6所示，当平坦层210上开设有交错的凹槽211时，平坦层210表面剩余的部分则形成多个凸起结构212，交错的凹槽211结构使得平坦层210 的表面形成阵列排布的凸起结构212。
如图6所示，图6为图3所示视图的又一视角视图，当平坦层210的表面开设有多个凹槽211，且在第一方向和第二方向上各开设有多个时，平坦层210的表面将形成多个凸起结构212。
以图6中两个双箭头指示的方向分别为第一方向和第二方向为例说明。在平坦层210上，分别沿第一方向和第二方向开设多个凹槽211，平坦层210中未开设凹槽211的区域的厚度将大于开设了凹槽211的区域的厚度，这样，凹槽211未经由的区域残留下来，形成凸起结构212。
进一步的，相邻两个凹槽211之间的距离不小于红光的波长。
凸起结构212对入射光能起到散射效果，相邻两个凹槽211之间的距离不小于红光的波长。应当理解的是，在可见光中，红光的波长是最长的，因此只要相邻两个凹槽之间的距离不小于红光的波长，就能避免入射光由一个凹槽211衍射至另一个凹槽211内。
此处，凹槽211之间的距离指的是不同凹槽211同一位置之间的距离，例如相邻两个凹槽211的最低点之间的距离，或者图3至图6中所示的相邻两个凹槽中，每一凹槽的最右端一点之间的距离。
红光的波长约为620至760纳米，其中，可见光谱中长波末端波长大约为625至740纳米。实施时，不同的显示基板中的红色像素对应的红光波长可能存在一定的差异。针对不同的显示基板，通过控制凸起结构212之间的距离大于相应的红光波长，能够避免入射光在凸起结构212处发生衍射，当散射的光线无法发生衍射时，在将经过多次反射后而消除，从而进一步减弱或消除色分离现象。
进一步的，该显示基板还包括形成于第一电极层220上的发光层230(Electroluminescent Layer，缩写为EL)和形成于发光层230上的第二电极层240，发光层230各处的厚度基本相等。
该发光层230和第二电极层240的材料可参考现有的发光层230及第二电极层240，此处不作进一步限定和描述。
由于发光层230形成于第一电极层220上，且发光层230各处的厚度基本相等，所以发光层230的形状也与第一电极层220相类似。相应的，第二 电极层240朝向第一电极层210的一侧的形成也与第一电极层220基本相同，且其每一处凹凸结构均与散射结构上的凹凸结构基本相对应。
这样，在垂直于衬底基板的方向上，第一电极层220和第二电极层240之间的距离是基本相等的，能够使得所形成的微腔结构长度均一，也能保证发光层230的色偏、色域、效率和亮度等性能不会受到较大影响。
第二实施例：
本实施例提供了一种显示装置，包括上述任一种显示基板，由于本实施例的技术方案包括了上述实施例的全部技术方案，因此至少能实现上述全部技术效果，此处不再赘述。
进一步的，该显示装置可以包括但不限于手机、平板电脑、电子书阅读器、MP3播放器、MP4播放器、数码相机、膝上型便携计算机、车载电脑、台式计算机、机顶盒、智能电视机、可穿戴设备中的至少一项。
第三实施例：
本实施例提供了一种显示基板的制备方法。
如图8所示，该显示基板的制备方法包括：
步骤801：在衬底基板上形成平坦层210；以及
在平坦层210上形成第一电极层220。
上述步骤801可参考现有的形成平坦层210的过程，并且，在形成平坦层210之前，还可能形成一些其他的功能膜层，即平坦层210可能并非直接形成于衬底基板的表面，而是首先在衬底基板上形成其他一些功能膜层，然后再在这些功能膜层上形成平坦层210，这些功能膜层包括但不限于栅极层、栅极绝缘层、有源层、源漏电极层等功能膜层，其具体可参考现有的可能出现的显示基板，此处不作进一步限定和描述。
进一步的，该显示基板的制备方法还包括：
步骤802：在平坦层210上形成散射结构。
上述在平坦层210上形成第一电极层220的步骤具体包括：
步骤803：在散射结构上形成第一电极层220，且所述第一电极层220各处的厚度基本相等。
与现有的显示基板中形成第一电极层220的主要区别在于，本实施例中 的第一电极层220是形成于散射结构上的，这样，所形成的第一电极层220的形状也与散射结构是基本相同的。
这样，当光线由封装层上的彩色滤光片入射至第一电极层220处时，由于散射结构的存在，使得入射光能第一电极层220上发生散射，这样，红、绿和蓝三种颜色的像素的阳极分别反射的红光、绿光和蓝光能够相对均匀的向各个方向散射，能够有效的减弱或消除色分离现象。
进一步的，上述步骤802包括：
对平坦层210进行第一次双激光干涉曝光；
对平坦层210进行第二次双激光干涉曝光；
使平坦层210的曝光区显影(develop)。
双激光干涉曝光指的是利用双光源通过光栅之后形成的干涉条纹进行曝光的工艺，通过双激光干涉曝光，由于两个光源发出的光线在不同位置相长或相消，能够形成间隔的干涉条纹，然后将曝光区显影即可形成相应的结构。
本实施例中，第一次双激光干涉曝光的干涉条纹相对于显示基板是沿第一方向的，第二次双激光干涉条纹相对于显示基板是沿第二方向的，且第一方向和第二方向为平行于衬底基板的不同方向。
如图6所示，两次干涉曝光实际上形成了网格状的曝光区，如图9所示，在曝光之后，将曝光区显影，则能够使平坦层210表面剩余的部分形成阵列排布的多个凸起结构212，其中，图7中平坦层210上方的虚线边界代表平坦层210的原边界，实线边界则代表经过曝光和显影工艺之后的边界。
进一步的，在第一次双激光干涉曝光和第二次双激光干涉曝光中过程，双激光的相邻两条干涉条纹之间的距离不小于红光的波长。
干涉条纹之间的距离可以通过控制光源波长、选用不同光栅常数的光栅、调整激光源的角度以及改变激光源与衬底基板之间的距离等方式来实现，其中，光栅常数指的是光栅相邻两条狭缝之间的距离。
由于干涉条纹之间的间距对应的是显影时，所消除的平坦层210结构之间的距离，该距离也就等于第一方向上或第二方向上相邻两个凹槽211之间的距离，因此，控制相邻两条干涉条纹的距离不小于红光的波长也就是使相邻两个凹槽211之间的距离不小于红光的波长，能够避免入射光在开设凹槽 后所形成的凸起结构212处发生衍射。
本实施例中，第一方向和第二方向只要不为相同或相反的方向，即可形成阵列的凸起机构作为散射结构，在一个具体实施方式中，第一方向和第二方向是基本互相垂直的。
上述对平坦层210进行第二次双激光干涉曝光，包括：使所述衬底基板在所述衬底基板所在的平面内旋转90度，保持曝光光源400的方向不变，并对所述平坦层进行双激光干涉曝光。
由于曝光光源400的移动较为不便，实施时，在进行第一次双激光干涉曝光之后，可以将衬底基板在其所在平面内顺时针或逆时针旋转90度，然后保持曝光光源400的方向不变，进行第二次双激光干涉曝光。这样，能够实现使第一次双激光干涉曝光的干涉条纹和第二次双激光干涉曝光的干涉条纹相互垂直，也就是使上述第一方向和第二方向相互垂直。
应当理解的是，此处旋转90度以及相互垂直均指的是在忽略可能存在的系统误差的情况下，使旋转的角度基本等于90度，以使第一方向和第二方向尽可能处于互相垂直的状态。
在上述步骤603之后，该显示基板的制备方法还包括：
在第一电极层220上形成发光层230，所述发光层230各处的厚度基本相等；以及
在发光层230的上形成第二电极层240。
在形成了第一电极层220之后，进一步的在第一电极层220上形成发光层230，由于所形成的第一电极层220的厚度基本相等，所以第一电极层220远离平坦层210的一侧表面的形状与散射结构也是基本相等的，这样，当发光层230各处的厚度基本相等时，发光层230的表面形状也就与第一电极层220的表面形状基本相同。这样，在发光层230表面形成第二电极层240之后，所形成的第二电极层240与第一电极层220之间的距离也就基本相等。
这样，在垂直于衬底基板的方向上，第一电极层220和第二电极层240之间的距离是基本相等的，能够使得所形成的微腔结构长度均一，也能保证发光层230的色偏、色域、效率和亮度等性能不会受到较大影响。
以上，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此， 任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以权利要求的保护范围为准。

Claims (20)

  1. 一种显示基板，包括衬底基板和位于所述衬底基板的一侧的多个子像素，所述多个子像素中的至少一个包含第一电极层，所述第一电极层被配置为将照射到所述第一电极层的入射光散射。
  2. 如权利要求1所述的显示基板，其中，所述显示基板还包括位于所述衬底基板和所述第一电极层之间的平坦层，所述平坦层远离所述衬底基板的一侧包括散射结构，并且所述第一电极层的形状与所述散射结构的形状基本相同。
  3. 如权利要求1或2所述的显示基板，其中，所述第一电极层各处的厚度基本相等。
  4. 如权利要求2所述的显示基板，其中，所述散射结构包括开设于所述平坦层远离所述衬底基板的一侧的至少一部分区域内的多个凹槽。
  5. 如权利要求4所述的显示基板，其中，所述凹槽包括沿第一方向和沿第二方向开设的多个互相交错的凹槽，沿所述第一方向开设的各所述凹槽是等间隔排布的，沿所述第二方向开设的各所述凹槽是等间隔排布的，所述第一方向和所述第二方向为平行于所述衬底基板的不同方向。
  6. 如权利要求4或5所述的显示基板，其中，相邻两个所述凹槽之间的距离不小于红光的波长。
  7. 如权利要求5所述的显示基板，其中，所述第一方向和所述第二方向互相垂直。
  8. 如权利要求4至7中任一项所述的显示基板，其中，所述凹槽在垂直于所述显示基板的方向上的截面形状是圆弧形、抛物线形、三角形或矩形。
  9. 如权利要求1至8中任一项所述的显示基板，其中，所述多个子像素包括红色子像素、绿色子像素和蓝色子像素，所述红色子像素、绿色子像素和蓝色子像素的阳极分别反射的红光、绿光和蓝光能够相对均匀的向各个方向散射。
  10. 如权利要求1至9中任一项所述的显示基板，其中，所述显示基板还包括位于所述第一电极层上的发光层和位于所述发光层上的第二电极层， 所述发光层各处的厚度基本相等。
  11. 如权利要求1至10中任一项所述的显示基板，其中，所述显示基板还包括封装层和位于封装层上的彩色滤光片。
  12. 一种显示装置，其中，包括权利要求1至11中任一项所述的显示基板。
  13. 一种显示基板的制备方法，包括：
    在衬底基板上形成多个子像素，其中，所述多个子像素中的至少一个包含第一电极层，所述第一电极层被配置为将照射到所述第一电极层的入射光散射。
  14. 如权利要求13所述的显示基板的制备方法，其中，所述在衬底基板上形成多个子像素包括：
    在衬底基板上形成平坦层；
    在所述平坦层上形成散射结构；以及
    在所述散射结构上形成第一电极层，所述第一电极层的形状与所述散射结构的形状基本相同且所述第一电极层各处的厚度基本相等。
  15. 如权利要求14所述的显示基板的制备方法，其中，所述在所述平坦层上形成散射结构，包括：
    对所述平坦层进行第一次双激光干涉曝光，其中，所述第一次双激光干涉的干涉条纹沿第一方向；
    对所述平坦层进行第二次双激光干涉曝光，其中，所述第二次双激光干涉的干涉条纹沿第二方向，且所述第一方向和所述第二方向为平行于所述衬底基板的不同方向；
    使所述平坦层的曝光区显影，以使所述平坦层远离所述衬底基板的表面形成多个凹槽。
  16. 如权利要求15所述的显示基板的制备方法，其中，所述第一次双激光干涉曝光和第二次双激光干涉曝光中过程，双激光的干涉条纹之间的距离不小于红光的波长。
  17. 如权利要求15所述的显示基板的制备方法，其中，所述第一方向和所述第二方向互相垂直。
  18. 如权利要求15所述的显示基板的制备方法，其中，所述凹槽的截面形状是圆弧形、抛物线形、三角形或矩形。
  19. 如权利要求15所述的显示基板的制备方法，其中，所述对所述平坦层进行第二次双激光干涉曝光，包括：
    使所述衬底基板在所述衬底基板所在的平面内旋转90度，保持曝光光源的方向不变，并对所述平坦层进行双激光干涉曝光。
  20. 如权利要求14至19中任一项所述的显示基板的制备方法，其中，在所述散射结构上形成第一电极层之后，还包括：
    在所述第一电极层上形成发光层，所述发光层各处的厚度基本相等；以及
    在所述发光层的上形成第二电极层。
PCT/CN2019/113012 2019-01-02 2019-10-24 显示基板及其制备方法和显示装置 Ceased WO2020140565A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/760,866 US11716888B2 (en) 2019-01-02 2019-10-24 Display substrate comprising scattering structure formed in anode and including plurality of mutually staggered grooves, method for preparing the same, and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910001232.1 2019-01-02
CN201910001232.1A CN109728197B (zh) 2019-01-02 2019-01-02 显示基板及其制备方法和显示装置

Publications (1)

Publication Number Publication Date
WO2020140565A1 true WO2020140565A1 (zh) 2020-07-09

Family

ID=66298100

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/113012 Ceased WO2020140565A1 (zh) 2019-01-02 2019-10-24 显示基板及其制备方法和显示装置

Country Status (3)

Country Link
US (1) US11716888B2 (zh)
CN (1) CN109728197B (zh)
WO (1) WO2020140565A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109728197B (zh) 2019-01-02 2021-01-26 京东方科技集团股份有限公司 显示基板及其制备方法和显示装置
CN112038369A (zh) * 2020-08-20 2020-12-04 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN115148778B (zh) * 2021-06-25 2025-08-01 武汉天马微电子有限公司 一种显示面板和显示装置
CN113745298B (zh) * 2021-08-31 2022-09-09 武汉华星光电半导体显示技术有限公司 一种显示面板
JP7798920B2 (ja) * 2021-10-26 2026-01-14 京東方科技集團股▲ふん▼有限公司 表示基板及びその製造方法、表示装置
CN114447200B (zh) * 2022-01-18 2023-12-29 Tcl华星光电技术有限公司 显示面板及制作方法
CN115768188A (zh) * 2022-11-22 2023-03-07 京东方科技集团股份有限公司 显示面板及显示面板的制作方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110254440A1 (en) * 2009-01-07 2011-10-20 Kiyoshi Minoura Organic electroluminescence display device and method for producing the same
CN105810718A (zh) * 2016-05-06 2016-07-27 京东方科技集团股份有限公司 一种oled显示面板及其制备方法
CN109728197A (zh) * 2019-01-02 2019-05-07 京东方科技集团股份有限公司 显示基板及其制备方法和显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100612076B1 (ko) 2003-09-08 2006-08-11 주식회사 엘지화학 나노 크기의 반구형 오목부가 형성된 기판을 이용한고효율 유기 발광 소자 및 이의 제조 방법
US7791271B2 (en) * 2006-02-24 2010-09-07 Global Oled Technology Llc Top-emitting OLED device with light-scattering layer and color-conversion
CN101071183A (zh) * 2006-05-10 2007-11-14 王子制纸株式会社 凹凸形状形成片及其制造方法、防反射体、相位差板、工序片原版以及光学元件的制造方法
JP5679869B2 (ja) 2011-03-07 2015-03-04 スタンレー電気株式会社 光半導体素子の製造方法
CN102313208A (zh) 2011-09-05 2012-01-11 南京中电熊猫液晶显示科技有限公司 背光模组
CN203859154U (zh) * 2013-10-30 2014-10-01 上海大学 具有顶发射oled结构的器件
WO2015104968A1 (ja) * 2014-01-10 2015-07-16 Ｊｘ日鉱日石エネルギー株式会社 光学基板、光学基板の製造に用いられるモールド、及び光学基板を含む発光素子
CN104330915B (zh) * 2014-11-07 2017-06-06 京东方科技集团股份有限公司 一种阵列基板、液晶显示面板及显示装置
US20180097202A1 (en) * 2016-10-03 2018-04-05 Regents Of The University Of Michigan Enhanced oled outcoupling by suppressing surface plasmon modes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110254440A1 (en) * 2009-01-07 2011-10-20 Kiyoshi Minoura Organic electroluminescence display device and method for producing the same
CN105810718A (zh) * 2016-05-06 2016-07-27 京东方科技集团股份有限公司 一种oled显示面板及其制备方法
CN109728197A (zh) * 2019-01-02 2019-05-07 京东方科技集团股份有限公司 显示基板及其制备方法和显示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOO, W.H. ET AL.: "Light Extraction from Organic Light-Emitting Diodes Enhanced by Spontaneously Formed Buckles,", NATURE PHOTONICS,, vol. 4, no. 4, 21 February 2020 (2020-02-21), pages 222 - 226, XP055209992 *

Also Published As

Publication number Publication date
CN109728197A (zh) 2019-05-07
US11716888B2 (en) 2023-08-01
CN109728197B (zh) 2021-01-26
US20210217827A1 (en) 2021-07-15

Similar Documents

Publication Publication Date Title
US11716888B2 (en) Display substrate comprising scattering structure formed in anode and including plurality of mutually staggered grooves, method for preparing the same, and display device
CN111326636B (zh) 一种阵列基板、其制作方法、显示面板及显示装置
TWI533065B (zh) 顯示面板
CN112018147B (zh) 阵列基板、显示装置和掩模板
JP2016018734A (ja) 表示装置及びその製造方法
US20250063926A1 (en) Display panel
WO2018120463A1 (zh) 彩色滤光层基板的制造方法及其应用的液晶面板的制造方法
CN115942821B (zh) 显示面板和显示装置
US9921445B2 (en) Liquid crystal display device
CN106783915B (zh) 一种显示装置、阵列基板及其制作方法
CN110114882A (zh) 显示基板、显示装置、掩模板和制造方法
CN117795408A (zh) 阵列基板及其制备方法、液晶盒、显示装置
CN104360428B (zh) 制作彩色滤光片的方法及彩色滤光片、显示装置
CN115981036B (zh) 显示面板的制备方法及显示面板
US12610686B2 (en) Array substrate with concavo-convex structure, display panel, display device and manufacturing method of array substrate
WO2024065421A1 (zh) 显示面板及其制备方法、显示装置
CN115933243A (zh) 一种显示面板、显示模组及显示终端
JP2004361933A (ja) カラーフィルタ基板およびその製造方法、ならびに表示装置
CN114334940B (zh) 一种显示面板及显示装置
TW202206903A (zh) 顯示面板
TWI439777B (zh) 液晶顯示面板之薄膜電晶體基板
US20250241165A1 (en) Display device, display panel and method for manufacturing display device
US20250113713A1 (en) Display substrate, manufacturing method thereof, display panel and display apparatus
JP5240694B2 (ja) カラー液晶パネル、その製造方法及びカラー液晶表示装置
CN120161655A (zh) 一种显示面板及显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19906899

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19906899

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 19906899

Country of ref document: EP

Kind code of ref document: A1