WO2020137826A1 - Circuit d'entraînement de grille et dispositif de commutation utilisant ce dernier - Google Patents

Circuit d'entraînement de grille et dispositif de commutation utilisant ce dernier Download PDF

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Publication number
WO2020137826A1
WO2020137826A1 PCT/JP2019/049901 JP2019049901W WO2020137826A1 WO 2020137826 A1 WO2020137826 A1 WO 2020137826A1 JP 2019049901 W JP2019049901 W JP 2019049901W WO 2020137826 A1 WO2020137826 A1 WO 2020137826A1
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Prior art keywords
power signal
gate drive
drive circuit
circuit
path
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PCT/JP2019/049901
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English (en)
Japanese (ja)
Inventor
榎本　真悟
永井　秀一
康史 河井
昇 根来
田畑　修
成伯 崔
雄太 永冨
Original Assignee
パナソニックＩｐマネジメント株式会社
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Priority to JP2020563177A priority Critical patent/JPWO2020137826A1/ja
Publication of WO2020137826A1 publication Critical patent/WO2020137826A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Definitions

  • the present disclosure relates to a gate drive circuit for a power semiconductor device.
  • ⁇ Power electronics technology is making miniaturization of electrical equipment for both consumer and industrial use.
  • a semiconductor switching element for example, an IGBT (Insulated Gate Bipolar Transistor)
  • IGBT Insulated Gate Bipolar Transistor
  • the gate drive circuit is a circuit that drives the gate of the semiconductor switching element.
  • the difference between the control signal of the gate drive circuit and the operating voltage of the semiconductor switching element is large. Therefore, it is necessary to electrically insulate the input side (hereinafter referred to as the primary side) and the output side (hereinafter referred to as the secondary side) of the gate drive circuit. That is, the signal and power on the primary side are transmitted from the primary side to the secondary side via the insulating portion.
  • the primary side input side
  • the secondary side output side
  • a signal indicating the abnormality is isolated from the secondary side. It is necessary to feed back to the primary side via the department.
  • Patent Document 1 shows a configuration in which a secondary side abnormality is fed back to the primary side in a general insulated gate drive circuit. Specifically, a transformer as an insulating element, a secondary side transmission circuit that transmits an AC signal indicating the presence or absence of abnormality to the primary side through the transformer, and a primary side reception circuit that receives the AC signal from the transformer. Is provided, and the abnormality occurring on the secondary side is fed back to the primary side.
  • Patent Document 2 discloses a configuration for feedback in an insulated gate drive circuit using an electromagnetic resonance coupler as an insulating element.
  • Such an insulated gate drive circuit is insulated between the primary side and the secondary side by using an insulating element having a high withstand voltage of about several kV.
  • a secondary side transmission circuit, a transformer, and a primary side reception circuit are provided in order to feed back the secondary side abnormality to the primary side. Therefore, the circuit scale increases and the circuit configuration becomes complicated.
  • Patent Document 2 there is a method of feeding back the state of the secondary side by detecting reflected power generated by changing the load state of the transmission circuit on the primary side on the secondary side. It is shown.
  • this method is used for a path with high transmission power for supplying power to the secondary side, the insertion loss of the impedance element becomes a problem.
  • increasing the impedance change of the impedance element and increasing the change in reflected power only reduces the amount of power transmission to the secondary side.
  • the present invention has been made in view of the above points, and an object thereof is to provide an insulated gate drive circuit that suppresses an increase in circuit scale, reduces the complexity of the circuit configuration, and reduces the influence on transmission power.
  • a gate drive circuit is an insulating gate drive circuit that drives a semiconductor switching element, and includes a transmitter that generates a power signal that serves as a basis for driving the gate of the semiconductor switching element, and the power.
  • a first insulating element that transmits a signal in an electrically insulated state, a receiving section that performs gate driving of the semiconductor switching element based on a power signal that is output from the first insulating element, and a receiving section detects the signal.
  • the gate drive circuit it is possible to suppress an increase in circuit size, reduce the complexity of the circuit configuration, and reduce the influence on the characteristics of the transmission path.
  • FIG. 1 is a block diagram showing a configuration example of a switching device including the gate drive circuit of the first embodiment.
  • FIG. 2A is a diagram showing a first example of a circuit element connected to a coupling terminal of the directional coupler of the first embodiment.
  • FIG. 2B is a diagram showing a second example of the circuit element connected to the coupling terminal of the directional coupler of the first embodiment.
  • FIG. 2C is a diagram showing a third example of the circuit element connected to the coupling terminal of the directional coupler of the first embodiment.
  • FIG. 2D is a diagram showing a fourth example of the circuit element connected to the coupling terminal of the directional coupler of the first embodiment.
  • FIG. 2A is a diagram showing a first example of a circuit element connected to a coupling terminal of the directional coupler of the first embodiment.
  • FIG. 2B is a diagram showing a second example of the circuit element connected to the coupling terminal of the directional coupler of the first embodiment.
  • FIG. 2C
  • FIG. 2E is a diagram showing a fifth example of the circuit element connected to the coupling terminal of the directional coupler of the first embodiment.
  • FIG. 3A is an operation explanatory diagram of the directional coupler.
  • FIG. 3B is a diagram showing pass characteristics in S-parameter notation of the directional coupler.
  • FIG. 3C is a diagram showing the power observed at the coupling terminal and the isolation terminal when the reflection coefficient of the output terminal of the directional coupler is changed.
  • FIG. 4 is an explanatory diagram of the power level of the feedback operation of the first embodiment.
  • FIG. 5 is a block diagram showing a configuration example of a switching device including the gate drive circuit of the second embodiment.
  • FIG. 6A is a diagram showing a first example of an impedance variable element connected to the coupling terminal of the directional coupler of the second embodiment.
  • FIG. 6B is a diagram showing a second example of the impedance variable element connected to the coupling terminal of the directional coupler of the second embodiment.
  • FIG. 6C is a diagram showing a third example of the impedance variable element connected to the coupling terminal of the directional coupler of the second embodiment.
  • FIG. 6D is a diagram showing a fourth example of the impedance variable element connected to the coupling terminal of the directional coupler of the second embodiment.
  • FIG. 6E is a diagram showing a fifth example of the impedance variable element connected to the coupling terminal of the directional coupler of the second embodiment.
  • FIG. 7 is an explanatory diagram of the power level of the feedback operation of the second embodiment.
  • FIG. 8 is a block diagram showing a configuration example of a switching device including the gate drive circuit of the third embodiment.
  • FIG. 9 is a block diagram showing a configuration example of a switching device including the gate drive circuit of the fourth embodiment.
  • FIG. 10A is a circuit diagram showing a first configuration example of the rectifier circuit.
  • FIG. 10B is a circuit diagram showing a second configuration example of the rectifier circuit.
  • FIG. 10C is a circuit diagram showing a third configuration example of the rectifier circuit.
  • FIG. 10D is a circuit diagram showing a fourth configuration example of the rectifier circuit.
  • FIG. 10E is a circuit diagram showing a fifth configuration example of the rectifier circuit.
  • FIG. 10A is a circuit diagram showing a first configuration example of the rectifier circuit.
  • FIG. 10B is a circuit diagram showing a second configuration example of the rectifier circuit.
  • FIG. 10C is a circuit diagram
  • FIG. 11 is a block diagram showing a switching device including a gate drive circuit in the modification.
  • FIG. 12A is a power level explanatory diagram of the feedback operation of the gate drive circuit in the modified example.
  • FIG. 12B is an operation explanatory diagram of the gate drive circuit in the modified example.
  • FIG. 1 is a schematic diagram showing a configuration of a switching device A including a gate drive circuit according to this embodiment.
  • the switching device A includes a power supply 100, a PWM power supply 101, a capacitor 74, a semiconductor switching element 60, a load power supply 102, and an insulated gate drive circuit 1 for driving the semiconductor switching element 60.
  • the switching device A includes a power supply 100, a PWM power supply 101, a capacitor 74, a semiconductor switching element 60, a load power supply 102, and an insulated gate drive circuit 1 for driving the semiconductor switching element 60.
  • the primary side only the transmission part or the power supply 100 for the transmission part of the switching device A is called the primary side, only the reception part or the switching device.
  • the semiconductor switching element 60 of A and the power supply 102 for the receiving unit may be collectively referred to as the secondary side.
  • the gate drive circuit 1 includes a transmitter 10, an insulator 11, and a receiver 12.
  • the transmitter 10 includes an oscillator 50, an amplifier 51, a mixer 52, and a rectifier circuit 82.
  • the insulating portion 11 includes insulating elements 3, 3a, 3b, 3c.
  • the receiving unit 12 includes a receiving circuit 13a, a receiving circuit 13b, a rectifying circuit 20, a directional coupler 70, a circuit element 80, a terminating element 81, and an abnormality detecting section 83.
  • FIG. 1 shows an example in which the receiver 12 includes a rectifier circuit 20 for power supply and two cascode-connected receiver circuits 13a and 13b.
  • the connection node N1 that connects the receiving circuits 13a and 13b is connected to the gate of the semiconductor switching element 60.
  • the receiving circuit 13a connected to the high potential side may be referred to as the first receiving circuit 13a
  • the receiving circuit 13b connected to the low potential side may be referred to as the second receiving circuit 13b.
  • the gate driving circuit 1 alternately switches the first and second receiving circuits 13a and 13b according to the control signal to generate an output pulse voltage and drive the gate of the semiconductor switching element 60. As a result, the gate drive circuit 1 switches the voltage supplied by the load power supply 102.
  • the transmitting unit 10 has a function of generating first and second PWM (Pulse Width Modulation) control signals R11 and R12 as power signals which are the basis of driving the semiconductor switching element 60.
  • the transmitter 10 includes an oscillator 50 that oscillates by receiving the power supply voltage Vi from the power supply 100, and a mixer 52 that receives the output of the oscillator 50.
  • the mixer 52 modulates the output of the oscillator 50 according to the PWM voltage Vm from the PWM power supply 101, and outputs the modulated first and second PWM control signals R11 and R12 to the insulating unit 11.
  • the transmission unit 10 includes an amplifier 51 provided on a path for supplying the drive power of the gate drive circuit 1.
  • the amplifier 51 receives the output of the oscillator 50 of the transmitter 10, and outputs a power signal obtained by amplifying the output as a high frequency signal R13.
  • the insulating unit 11 includes an insulating element 3 for power supply, an insulating element 3a, an insulating element 3b, and an insulating element 3c for feedback.
  • the insulating element 3 for power supply the insulating element 3a, the insulating element 3b, and the insulating element 3c for feedback, for example, a conventionally known electromagnetic resonance coupling element can be applied.
  • the power supply insulating element 3, the insulating elements 3a and 3b, and the feedback insulating element 3c can have the same configuration.
  • the insulation element 3 for power supply may be referred to as a first insulation element 3
  • the insulation element 3c for feedback may be referred to as a second insulation element 3c.
  • the insulating element 3 for power supply is provided in the path for supplying the drive power of the gate drive circuit 1, receives the high frequency signal R13 as a power signal output from the amplifier 51, and is electrically insulated in a state of being
  • the signal is input to the input terminal D1 of the directional coupler 70 in the subsequent stage.
  • the power signal is further transmitted from the output terminal D2 of the directional coupler 70 to the rectifier circuit 20 for power supply.
  • the electrically insulated state is a separated state that conducts AC (especially high frequency signal) but does not conduct DC, and the primary side ground 200 and the secondary side ground 201 are separated. Says the state of being separated.
  • the insulating element 3a receives the first PWM control signal R11 and transmits this signal in an electrically insulated state.
  • the insulating element 3b receives the second PWM control signal R12 and transmits this signal in an electrically insulated state.
  • Receiving circuits 13a and 13b are connected to the outputs of the insulating elements 3a and 3b, respectively.
  • the feedback insulating element 3c is a path for feeding back the high frequency signal R14 of the receiving section 12 to the transmitting section 10 in the opposite direction to the other insulating elements.
  • the high frequency signal R14 is a signal obtained by branching a part of the power signal in the directional coupler 70.
  • the output of the coupling terminal D3 of the directional coupler 70 is connected to the insulating element 3c for feedback via the circuit element 80.
  • the circuit element 80 switches its conduction state according to the control signal C11 indicating the abnormal state from the abnormality detection unit 83. Thereby, the intensity of a part of the power signal passing through the circuit element 80 can be changed.
  • the following circuit portion in the gate drive circuit 1 of FIG. 1 is provided as a transmission circuit for transmitting the abnormal state detected by the receiving side to the transmitting side. That is, the transmission circuit is a circuit portion including the directional coupler 70, the circuit element 80, the termination element 81, the abnormality detection unit 83, the insulating element 3c, and the rectifier circuit 82.
  • This transmission circuit is configured to transmit an abnormal state by branching a part of the power signal using an insulation path (insulation element 3c) different from the path for transmitting the power signal on the insulation element 3. ing.
  • the rectifier circuit 82 is a circuit that receives the feedback signal R14, which is a high frequency power signal, and converts it into a voltage. In other words, by rectifying the feedback signal R14 which is a part of the power signal branched by the directional coupler 70, it is converted into a DC signal having a voltage indicating the presence or absence of the abnormal state or the type of the abnormal state.
  • This DC signal may be a binary signal that can take two voltage values that indicate the presence or absence of an abnormal state, or a multilevel signal that can take three or more voltage values that indicate the type of abnormal state, or a continuous signal. It may be an analog signal that changes dynamically.
  • the isolation terminal D4 of the directional coupler 70 is terminated by a terminating element 81 with a constant impedance (for example, 50 ohm).
  • the abnormality detection unit 83 provided in the reception unit 12 is a circuit that detects an abnormal state E11 on the secondary side and generates a control signal C11, and the conduction state of the circuit element 80 is controlled by the control signal C11.
  • the rectifier circuit 20 supplies the power of the gate drive circuit by converting the output of the insulating element 3 for power supply into a DC voltage and charging the capacitor 74.
  • the capacity of the capacitor 74 is not particularly limited, but is about several ⁇ F, for example.
  • the receiving circuit 13a has a rectifier circuit 2a and a corresponding drive transistor 5a.
  • the receiving circuit 13b has a rectifier circuit 2b and a corresponding drive transistor 5b.
  • rectifier circuit 20 for power supply and the plurality of rectifier circuits 2a and 2b have different diode directions depending on the polarity of the voltage to be generated, but circuits of the same configuration can be applied, and these are collectively referred to. Then, it may be simply referred to as "rectifier circuit 2".
  • the rectifier circuit 2a has an input terminal, an output terminal, and a ground terminal.
  • the input capacitor Ca and the inductor L1 are connected in series between the input terminal and the output terminal.
  • the intermediate node between the input capacitor Ca and the inductor L1 is connected to the ground terminal via the diode d1 in the forward direction. Further, an output capacitor C1 is provided between the output terminal and the ground terminal.
  • the rectifier circuits 2b, 20, 82 may have the same configuration as the rectifier circuit 2a.
  • the rectifier circuit 2a of the first receiver circuit 13a rectifies the first PWM control signal R11 received from the transmitter 10 via the insulating element 3a and outputs it as a voltage pulse signal to the gate of the first drive transistor 5a.
  • the ground terminal of the rectifier circuit 2a is connected to the source of the drive transistor 5a, and the resistance element 4a is provided between the gate and source of the drive transistor 5a.
  • the rectifier circuit 2b of the second receiver circuit 13b rectifies the second PWM control signal R12 received from the transmitter 10 via the insulating element 3b and outputs it as a voltage pulse signal to the gate of the drive transistor 5b.
  • the ground terminal of the rectifier circuit 2b is connected to the source of the drive transistor 5b, and the resistance element 4b is provided between the gate and source of the drive transistor 5b.
  • the rectifier circuits 2a and 2b since the drive transistors 5a and 5b are both N-channel depletion type FETs, the rectifier circuits 2a and 2b generate a negative voltage.
  • the primary side ground 200 and the secondary side ground 201 are electrically separated from each other by the insulating portion 11.
  • FIGS. 2A to 4 are diagrams showing first to fifth examples of circuit elements connected to the coupling terminal D3 of the directional coupler 70 of the first embodiment.
  • the circuit element 80 When the gate drive circuit 1 is operating normally, the circuit element 80 is in a non-conductive state, but when the abnormal state E11 on the secondary side is detected by the abnormality detection unit 83, the circuit element 80 is turned on by the control signal C11. It becomes conductive.
  • the circuit element 80 described as shown in FIG. 2A is an element that changes the conduction state by applying a control signal to the control terminal Vctl, and is, for example, a switch element that is turned on/off by the control signal as shown in FIG. 2B. is there.
  • FIG. 2C it is a switch circuit using semiconductor FETs, and in order to increase the signal change between on and off, there are cases where semiconductor FET switches are connected in series as shown in FIG. 2D.
  • a semiconductor switch configuration of SPDT (Single-Pole-Double-Throw) configuration as shown in FIG. 2E may be adopted.
  • Reference numeral 503 is an inverter inverting circuit that inverts the control signal.
  • Reference numeral 500 is a path for setting the termination impedance of the directional coupler to 50 ohms in the non-communication state, but it can be omitted.
  • Reference numeral 502 is a DC-cut 50 ohm resistor.
  • 501 is a shunt SW portion for improving isolation in the off state, and can be omitted.
  • each switch element has a conduction amount in accordance with a control signal C11 input to the control terminal Vctl, in addition to the switch operation of turning on and off. You may change continuously.
  • FIG. 3A is an operation explanatory diagram of the directional coupler 70.
  • FIG. 3B is a diagram showing a pass characteristic of the directional coupler 70 in S parameter notation.
  • the directional coupler is a 4-terminal element as shown in FIG. 3A, and includes a main path (input terminal D1 to output terminal D2) for transmitting a main signal and a sub path (coupling terminal) for extracting a part of electric power from the main path. D3-isolation terminal D4).
  • the coupling terminal D3 is a terminal for extracting a part of the electric power incident on the input terminal D1
  • the isolation terminal D4 is a terminal for extracting a part of the electric power reflected by the output terminal D2.
  • FIG. 3B shows simulation results of pass characteristics S21, S31, and S41 in the S parameter notation of the directional coupler when the terminating impedance of the coupling terminal D3 is changed at the transmission frequency of 2.45 GHz.
  • the terminals other than the coupling terminal D3 are terminated with 50 ohms.
  • the directional coupler is designed in a 50 ohm system, and when the coupling terminal D3 is 50 ohms, S31 shows about -18 dB, and S41 shows -40 dB or less, which is a good directional characteristic.
  • the terminating impedance of the coupling terminal D3 is, for example, 500 ohms
  • the amount of change in S21 and S31 is small, but S41 greatly changes to ⁇ 20 dB, and the power of the isolation terminal D4 increases.
  • a feedback method can be realized by utilizing the fact that the termination impedance dependency of the coupling terminal D3 of S41 is large, which will be described in the second embodiment described later.
  • FIG. 3C is a diagram showing the power observed at the coupling terminal and the isolation terminal when the reflection coefficient of the output terminal of the directional coupler is changed.
  • FIG. 3C shows a coupling terminal D3 in a case where a signal having a transmission frequency of 2.45 GHz and a power of 27 dBm is input to the input terminal D1 of the directional coupler and the reflection coefficient of the output terminal D2 is changed in the 50 ohm system. It is a simulation result showing the change of the electric power observed at the terminal D4.
  • the power at the coupling terminal D3 hardly changes, but the power observed at the isolation terminal D4 changes greatly.
  • the S21 characteristic of the directional coupler and the load impedance of the amplifier 51 of the transmission unit 10 hardly change as described above even when the state of the circuit element 80 changes before and after the abnormal state is detected.
  • the first PWM control signal S11 transmitted to the receiver 12 is also almost unchanged.
  • the reflection coefficient when the semiconductor switching element 60 side is viewed from the output end of the directional coupler 70 changes. There are cases.
  • the coupling terminal output is used as the feedback signal, there is an advantage that the intensity of the feedback signal does not change even if the reflection coefficient changes, as described with reference to FIG. 3C.
  • the main path of the directional coupler 70 is used only for power transmission, and the output of the coupling terminal of the directional coupler 70 is changed by the circuit element 80.
  • the amount of electric power from the coupling terminal is not affected by the load fluctuation of the output terminal, so that it is possible to prevent erroneous transmission of the abnormal state due to the load fluctuation of the gate drive circuit 1.
  • FIG. 4 is an explanatory diagram of the power level of the feedback operation of the first embodiment.
  • FIG. 4 is a simulation result of power at each node in the normal operation state and the abnormality detection state in the feedback operation of the gate drive circuit in the present embodiment.
  • the gate drive circuit is the insulated gate drive circuit 1 that drives the semiconductor switching element 60, and transmits the power signal that is the basis of the gate drive of the semiconductor switching element 60.
  • Section 10 a first insulating element 3 that transmits a power signal in an electrically insulated state, and a receiving section 12 that performs gate driving of the semiconductor switching element 60 by the power signal output from the first insulating element 3.
  • a transmission circuit for transmitting the state detected by the reception unit 12 side to the transmission unit 10 side, and the transmission circuit uses an insulation element 3c different from the path for transmitting the power signal on the first insulation element 3.
  • the state is transmitted by branching a part of the power signal.
  • the power signal is used without affecting the characteristics of the transmission unit in terms of power transmission, current consumption, breakdown, etc., and without using a transmission circuit that modulates a signal indicating an abnormal state on the secondary side.
  • a gate drive circuit that can stably transmit the abnormal state on the secondary side to the primary side, suppress an increase in the circuit scale, and reduce the complexity of the circuit configuration.
  • the transmission circuit may branch a part of the power signal on the receiving unit 12 side.
  • the transmission circuit may include a directional coupler 70 on the reception unit 12 side that branches a part of the power signal output from the first insulating element 3.
  • the directional coupler 70 has a coupling terminal D3 that outputs a part of the power signal
  • the transfer circuit has a circuit element 80 connected to the coupling terminal D3, and the conduction state of the circuit element 80 is set.
  • the intensity of a part of the power signal may be changed by switching according to the state detected by the receiving unit 12 side.
  • the directional coupler 70 includes a main path for transmitting the power signal input from the first insulating element 3, a sub path for branching a part of the power signal transmitted to the main path, and a sub path.
  • the output and transmission circuit is connected to the coupling terminal D3 and changes the strength of a part of the power signal by switching the conduction state according to the state, and the terminating element 81 provided on the receiving unit 12 side and other Second insulation that constitutes a part of the insulation path and transmits a part of the power signal input from the coupling terminal D3 through the terminating element 81 in an electrically insulated state from the reception side to the transmission side.
  • the element 3c may be included.
  • the main path of the directional coupler 70 is used only for power transmission, and the output intensity from the coupling terminal D3 of the directional coupler 70 is changed depending on the conduction state of the circuit element 80.
  • the high frequency signal R13 for power transmission is not deteriorated and overcurrent of the amplifier 51 of the transmission unit 10 and device destruction can be prevented.
  • the electric energy from the coupling terminal D3 is not influenced by the load fluctuation of the output terminal D2, it is possible to prevent the erroneous transmission of the abnormal state due to the load fluctuation of the gate drive circuit 1.
  • a rectifier circuit 82 that outputs a signal having a voltage according to the state by rectifying a part of the power signal may be provided on the transmission unit side.
  • the abnormal state detected on the receiving side can be detected on the transmitting side as a signal having a voltage according to the abnormal state.
  • the first insulating element 3 may be an electromagnetic resonance coupling element.
  • the switching device A includes the above gate drive circuit 1 and the semiconductor switching element 60 driven by the gate drive circuit 1.
  • FIG. 5 is a schematic diagram showing the configuration of the switching device A including the gate drive circuit of the present embodiment.
  • constituent elements that are common are assigned the same reference numerals.
  • the gate drive circuit 1 which is different from FIG. 1 will be described in detail, and the description of the common parts with FIG. 1 may be omitted.
  • the circuit portion including the abnormality detection unit 83, the impedance variable element 84, the insulating element 3c, the directional coupler 70, and the rectifier circuit 82 transmits the abnormal state detected by the reception unit 12 side to the transmission unit 10 side. It is provided as a transmission circuit.
  • the directional coupler 70 is connected to a main path that transmits a power signal and outputs the power signal to the first insulating element 3, a sub path that branches a part of the power signal that is transmitted to the main path, and one end of the sub path. , An isolation terminal D4 for outputting a part of the power signal, and a coupling terminal D3 connected to the other end of the sub path.
  • the impedance variable element 84 is provided on the receiving unit 12 side and changes the impedance according to the abnormal state detected on the receiving unit side.
  • the insulating element 3c has a first terminal on the transmitting side and a second terminal on the receiving side, and constitutes a part of another insulating path.
  • the first terminal is connected to the coupling terminal D3, and the second terminal is connected to the impedance variable element 84.
  • the insulating element 3c is a path for feeding back the abnormal state detected by the receiving unit 12 to the transmitting unit 10 as an impedance change, unlike the other insulating elements in the transmission direction in that it is for feedback.
  • the output of the coupling terminal D3 of the directional coupler 70 provided in the transmission unit 10 is connected to the feedback insulation element 3c and is connected to the impedance variable element 84 provided on the reception unit 12 side.
  • the isolation terminal D4 of the directional coupler 70 is connected to the rectifier circuit 82.
  • the rectifier circuit 82 is a circuit that receives the feedback signal R14, which is a high frequency power signal, and converts it into a voltage.
  • the abnormality detection unit 83 provided in the reception unit 12 is a circuit that detects an abnormal state E11 on the secondary side and generates a control signal C11, and controls the impedance value of the impedance variable element 84 by the control signal C11.
  • FIGS. 6A to 7 are diagrams showing first to fifth examples of the impedance variable element 84 connected to the coupling terminal D3 of the directional coupler 70 of the second embodiment.
  • the impedance variable element 84 is set to a state where the directional coupler 70 has good directivity, for example, 50 ohms.
  • variable impedance element 84 is set by the control signal C11 to a state that deteriorates the directivity of the directional coupler 70, for example, 500 ohms.
  • the terminating impedance of the coupling terminal D3 of the directional coupler 70 is changed, the amount of power output from the isolation terminal D4 of the directional coupler changes.
  • the present embodiment is characterized in that a signal is exchanged from the secondary side to the primary side by changing the impedance termination condition via the insulating element 3 using the characteristic of the directional coupler.
  • the main path of the directional coupler 70 is used only for power transmission, and the termination terminal state of the coupling terminal output of the directional coupler 70 provided in the transmission unit 10 is changed by the impedance variable element 84. Therefore, there is an advantage that power transmission to the secondary side does not deteriorate, and overcurrent of the amplifier 51 of the transmission unit 10 and device destruction can be prevented.
  • the impedance state changed in accordance with the control signal C11 input to the control terminal Vctl may be multivalued or continuously changed. You may let me.
  • variable impedance element 84 for changing the directivity of the directional coupler 70 does not have to be an actual resistance, and may include a reactance component.
  • FIG. 7 is an explanatory diagram of the power level of the feedback operation of the second embodiment.
  • FIG. 7 is a simulation result of power at each node in the normal operation state and the abnormality detection state in the feedback operation of the gate drive circuit in the present embodiment.
  • the present embodiment does not require a directional coupler using a switch element or thick film wiring that operates well at high frequencies in the semiconductor chip used in the receiving unit as in the first embodiment, and is more versatile. There is an advantage that an inexpensive semiconductor process can be used and the degree of freedom in process selection in forming a gate drive circuit is increased.
  • the transmission circuit has, on the transmission unit 10 side, the directional coupler 70 that branches a part of the power signal input to the first insulating element 3.
  • the directional coupler 70 is provided in the transmitting unit 10 and not in the receiving unit 12, for example, when the receiving unit 12 is configured as a semiconductor chip, the directional coupling using thick film wiring is used.
  • a general-purpose and inexpensive semiconductor process can be used without the need to create a container, and the degree of freedom in process selection increases.
  • the directional coupler 70 includes a main path that transmits a power signal and outputs the power signal to the first insulating element 3, a sub path that branches a part of the power signal that is transmitted to the main path, and one end of the sub path. And a coupling terminal D3 connected to the other end of the auxiliary path, the transmission circuit being provided on the receiving unit 12 side,
  • the impedance variable element 84 that changes the impedance according to the state detected on the side, the first terminal on the side of the transmitter 10 and the second terminal on the side of the receiver 12 are provided, and a part of the other insulating path is provided.
  • the second terminal may be connected to the coupling terminal D3, and the second terminal may be connected to the impedance variable element 84.
  • FIG. 8 is a schematic diagram showing the configuration of the switching device A of the present embodiment.
  • constituent elements common to those in FIG. 1 (having the same or similar functions) are designated by the same reference numerals.
  • the gate drive circuit 1 which is different from FIG. 1 will be described in detail, and the description of the common parts with FIG. 1 may be omitted.
  • the gate drive circuit 1 of FIG. 8 is different from that of FIG. 1 in that the directional coupler 70 is connected and an impedance variable element 84 is provided instead of the circuit element 80 and the termination element 81.
  • the circuit portion including the abnormality detecting unit 83, the impedance variable element 84, the directional coupler 70, the insulating element 3c, and the rectifying circuit 82 transmits the abnormal state detected by the receiving unit 12 side to the transmitting unit 10 side. It is provided as a transmission circuit.
  • the directional coupler 70 is connected to a main path for transmitting the power signal from the first insulating element 3, a sub path for branching a part of the power signal transmitted to the main path, and one end of the sub path. , An isolation terminal D4 for outputting a part of the power signal, and a coupling terminal D3 connected to the other end of the sub path.
  • the impedance variable element 84 is connected to the coupling terminal D3 and changes the impedance according to the abnormal state detected by the receiving unit 12 side.
  • the insulating element 3c constitutes a part of another insulating path different from the insulating element 3 and electrically transfers a part of the power signal output from the isolation terminal D4 from the receiving unit 12 side to the transmitting unit 10 side. Transmit in an insulated state.
  • the insulating element 3c is for feedback, and is a path for feeding back the feedback signal R14 of the receiver 12 to the transmitter 10 in the opposite direction to the other insulating elements.
  • the output of the coupling terminal D3 of the directional coupler 70 provided in the receiver is connected to the impedance variable element 84.
  • the isolation terminal D4 of the directional coupler 70 is connected to the insulating element 3c, and the transmitter side of the feedback element 3c is connected to the rectifier circuit 82 and detected as a voltage.
  • the rectifier circuit 82 is a circuit that receives the feedback signal R14, which is a high frequency power signal, and converts it into a voltage.
  • the abnormality detection unit 83 provided in the reception unit 12 is a circuit that detects an abnormal state E11 on the secondary side and generates a control signal C11, and controls the impedance value of the impedance variable element 84 by the control signal C11.
  • the impedance variable element 84 is set to a state where the directional coupler 70 has good directivity, for example, 50 ohms.
  • variable impedance element 84 is set by the control signal C11 to a state that deteriorates the directivity of the directional coupler 70, for example, 500 ohms.
  • the terminating impedance of the coupling terminal D3 of the directional coupler 70 is changed, the amount of power output from the isolation terminal D4 of the directional coupler changes.
  • the present embodiment is characterized in that a signal is exchanged from the secondary side to the primary side by changing the impedance termination condition via the insulating element 3 using the characteristic of the directional coupler.
  • the main path of the directional coupler 70 is used only for power transmission, and the termination terminal state of the coupling terminal output of the directional coupler 70 provided in the transmission unit 10 is changed by the impedance variable element 84. Therefore, there is an advantage that the high frequency signal R13 for power transmission to the secondary side is not deteriorated and overcurrent of the amplifier 51 of the transmission unit 10 and device destruction can be prevented.
  • the impedance state changed according to the control signal C11 input to the control terminal Vctl may be multivalued or may be continuously changed.
  • variable impedance element 84 for changing the directivity of the directional coupler 70 does not have to be an actual resistance, and may include a reactance component.
  • the present embodiment unlike the first embodiment, it is not necessary to create a switch element that operates well at high frequency in the semiconductor chip used in the receiving unit, and the thick film wiring is used also in the semiconductor chip used in the transmitting unit.
  • a more general-purpose and inexpensive semiconductor process can be used, such as no need to make a directional coupler, and the degree of freedom in process selection when configuring a gate drive circuit increases.
  • the directional coupler 70 has the coupling terminal D3 and the isolation terminal D4 that outputs a part of the power signal, and the transmission circuit has the coupling terminal.
  • the impedance variable element 84 connected to D3 is provided, and by switching the impedance of the impedance variable element 84 according to the state detected on the receiving unit 12 side, a part of the power signal output from the isolation terminal D4 is Change the intensity.
  • the directional coupler 70 includes a main path for transmitting the power signal from the first insulating element 3, a sub path for branching a part of the power signal transmitted to the main path, and one end of the sub path. And a coupling terminal D3 connected to the other end of the auxiliary path, and the transmission circuit is connected to the coupling terminal D3 and is connected to the receiving unit side.
  • An impedance element 84 that changes the impedance according to the detected state and a part of another insulation path, and a part of the power signal output from the isolation terminal D4 is transferred from the receiver 12 side to the transmitter 10.
  • a second insulating element 3c that transmits to the side in an electrically insulated state.
  • FIG. 9 is a schematic diagram showing a configuration example of the switching device A including the gate drive circuit of the present embodiment.
  • the same components as those in FIG. 1 (having the same or similar functions) are designated by the same reference numerals.
  • the gate drive circuit 1 which is different from FIG. 1 will be described in detail, and the description of the common parts with FIG. 1 may be omitted.
  • 9 is different from FIG. 1 in that a driver unit 85 is added and that the variable impedance element 84 further outputs a signal dis indicating an abnormality.
  • different points will be mainly described.
  • the driver unit 85 is a circuit that drives the drive transistors 5c and 5d and has a disable terminal. When the signal dis input to the disable terminal indicates an abnormality, the driver unit 85 stops driving the drive transistors 5c and 5d. When the signal dis input to the disable terminal indicates no abnormality, the driver unit 85 The drive of the drive transistors 5c and 5d is not stopped.
  • the feedback insulating element 3c is a path for feeding back the feedback signal R14 of the receiving section 12 to the transmitting section 10 in the opposite direction to the other insulating elements.
  • the circuit element 80 is connected to the output of the coupling terminal D3 of the directional coupler 70, the output thereof is connected to the feedback element 3c, and the transmitter side of the feedback element 3c is connected to the rectifier circuit 82. It is detected as a voltage.
  • the rectifier circuit 82 is a circuit that receives the feedback signal R14, which is a high frequency power signal, and converts it into a voltage.
  • the isolation terminal D4 of the directional coupler 70 is terminated by a terminating element 81 with a constant impedance (for example, 50 ohm).
  • the amplifier 55 amplitude-modulates the output of the oscillator 50 according to the PWM voltage Vm from the PWM power supply 101, and outputs it to the insulating unit 11 as a PWM control signal R15.
  • the configuration of the amplifier 55 is not particularly limited, but, for example, a method of changing the bias state by changing the potential of the base or the gate of the transistor forming the amplifier 55, or a method of changing the power supply to the collector and drain of the transistor are available. is there. Further, the same function may be realized by switching the attenuation amount by using the attenuator or SW alone or in combination with the amplifier.
  • the rectifier circuit 2c rectifies the PWM control signal R15 received from the transmission unit 10 via the insulating element 3a and outputs it as a voltage pulse signal to the driver unit 85.
  • the ground terminal of the rectifier circuit 2c is connected to the secondary side ground 201.
  • the rectifier circuit 2c drives the driver unit 85 and thus generates a positive voltage.
  • the driver unit 85 is a circuit that drives the drive transistors 5c and 5d.
  • the drive transistors 5c and 5d are, for example, high-voltage CMOS transistors, and 5c is a pMOS and 5d is an nMOS. To drive.
  • the circuit element 80 When the gate drive circuit 1 is operating normally, the circuit element 80 is in a non-conductive state, but when the abnormal state E11 on the secondary side is detected by the abnormality detection unit 83, the circuit element 80 is turned on by the control signal C11. The conduction state is established, the abnormal state is fed back to the primary side by a high frequency power signal, the driver section 85 is turned off by the control signal C12, the semiconductor switching element 60 is turned off, and the protection operation is performed on the secondary side.
  • the present embodiment can be configured with a smaller number of insulating elements, can be downsized, and can perform not only the feedback of the abnormal state to the primary side but also the protection operation of the secondary side at the same time. Is possible.
  • the gate drive circuit according to the fourth embodiment stops the gate drive of the reception unit 12 according to the state detected by the reception unit 12 side.
  • FIG. 11 is a block diagram showing a switching device including a configuration of a gate drive circuit in a modified example.
  • the gate drive circuit 1 of FIG. 11 is similar to FIG. 5 of the second embodiment in that the directional coupler 70 is provided on the transmission unit 10 side. However, the gate drive circuit 1 of FIG. 11 differs from that of FIG. 5 in the connection relationship of the directional coupler 70, the point that the second insulating element 3c is not provided, and the point that the impedance element 900 is added. There is. Also, in the gate drive circuit of the modified example, the operation of driving the gate of the semiconductor switching element 60 is the same as that of the first embodiment, but the feedback operation is different. Hereinafter, different points will be mainly described.
  • a circuit portion including the abnormality detecting unit 83, the impedance element 900, the insulating element 3, the directional coupler 70, the terminating element 81, and the rectifying circuit 82 is provided as a transmission circuit.
  • the directional coupler 70 is connected to a main path that transmits a power signal and outputs the power signal to the first insulating element 3, a sub path that branches a part of the power signal that is transmitted to the main path, and one end of the sub path. , An isolation terminal D4 for outputting a part of the power signal, and a coupling terminal D3 that is connected to the other end of the sub path and is terminated.
  • Impedance element 900 changes impedance according to an abnormal state detected on the receiving side, and is connected to first insulating element 3 on the receiving side.
  • the abnormality detection unit 83 provided in the reception unit is a circuit that detects an abnormal state E11 on the secondary side and generates a control signal C11, and controls the state of the impedance element 900 by the control signal C11.
  • the impedance element 900 has a high impedance during normal operation and does not affect power transmission through the main path, but has a low impedance when an abnormality is detected.
  • the reflection coefficient of the output terminal D2 of the directional coupler 70 of the transmission section increases, the output of the isolation terminal D4 increases, and the input power to the rectifier circuit 82 increases.
  • FIG. 12A is a power level explanatory diagram of the feedback operation of the gate drive circuit in the modified example.
  • FIG. 12A shows changes in the load impedance from the output terminal D2 of the directional coupler 70 to the semiconductor switching element 60 side during normal operation and during abnormality detection in the hood back operation.
  • the impedance element 900 has a high impedance and the reflection coefficient is almost zero (it hardly affects the 50 ohm system), but when an abnormality is detected, the impedance element becomes a low impedance and the reflection coefficient is up to about 0.7. It is increasing.
  • FIG. 12B is a simulation result of electric power in each node in the normal operation state and the abnormality detection state in the gate drive circuit of the modified example.
  • the primary side node P5 has a sufficient on/off difference of about 10 dB, so there is no problem as a feedback operation.
  • the gate drive circuit according to the modified example is an insulating type gate drive circuit that drives the semiconductor switching element 60, and includes a transmitter 10 that generates a power signal that is a basis for gate drive of the semiconductor switching element 60.
  • a first insulation element 3 that transmits a power signal in an electrically insulated state
  • a reception unit 12 that performs gate driving of the semiconductor switching element 60 by a power signal output from the first insulation element 3, and a reception unit
  • the directional coupler 70 includes a main path that transmits a power signal and outputs the power signal to the first insulating element 3, a sub path that branches a part of the power signal that is transmitted to the main path, and one end of the sub path. And a coupling terminal D3 connected to the other end of the auxiliary path, which outputs a part of the power signal, and a terminated coupling terminal D3, and the transmission circuit detects on the receiving unit 12 side.
  • An impedance element 900 that changes the impedance according to the state and is connected to the first insulating element 3 on the receiving unit 12 side may be provided.
  • the gate drive circuit 1 according to one or more aspects has been described based on the embodiment, but the present disclosure is not limited to this embodiment. As long as it does not depart from the gist of the present disclosure, various modifications that can be conceived by those skilled in the art are made to the present embodiment, and forms constructed by combining components in different embodiments are also included in the scope of the present disclosure. ..
  • an amplifier that amplifies the output of the oscillator 50 and an output of the amplifier are switched and output to the insulating unit 11 as the first and second PWM control signals R11 and R12. It may be configured to include an SPDT switch that operates.
  • the directional coupler 70 is designed to have 50 ohms, but it may be designed to have an impedance according to the insertion location or an impedance design that can be designed by an interlayer film of a semiconductor process.
  • the isolation terminal may be terminated accordingly.
  • the directional coupler 70 has a good directional property, but a directional coupler having a poor directional property or, eventually, a non-directional capacitance. It is also possible to use loose coupling by.
  • the abnormality detection unit 83 and the variable impedance element 84 are used as a protection function of a general gate drive circuit such as DESAT (detects the desaturation state of the switching element) and UVLO (Under Voltage).
  • Lock Out is a circuit that detects an abnormal condition and converts it into a voltage, and can be easily realized by combining general analog circuits such as a comparator and bandgap regulator.
  • the circuit element 80 is binary control of ON/OFF, but in order to distinguish different abnormal states on the secondary side, or the analog signal itself detected on the secondary side is set to 1. In order to monitor on the secondary side, feedback from the secondary side to the primary side can be realized in multi-valued control or continuous analog control.
  • the abnormal state E11 in the first to fourth embodiments is not limited to an abnormal state, and may be a normal state or some state that does not directly indicate normal or abnormal.
  • the abnormal state E11 may be a voltage value or temperature as the state detected by the receiving unit 12 side.
  • a single shunt type circuit is illustrated as the configuration of the rectifying circuit 2 of the receiving circuit 13 and the rectifying circuit 82 of the feedback unit, but the configuration is not limited to this.
  • a rectifier circuit having such a configuration may be applied.
  • another rectification method such as a voltage doubler type or a bridge type may be applied.
  • 10A to 10E show first to fifth configuration examples of the rectifier circuit 2.
  • the rectifier circuit 2 is a general term for the rectifier circuit 20 and 2a, 2b, and 82.
  • 10A to 10E exemplify circuits that generate a negative potential with respect to the ground terminal in all circuits. A positive potential can be generated by reversing the direction of the diode.
  • the single shunt type shown in FIG. 10A is used as the configuration of the rectifier circuit 2, but the configuration is not limited to this.
  • a single series type shown in FIG. 10B, a double voltage type shown in FIG. 10C, a double current type shown in FIG. 10D, a bridge type shown in FIG. is there.
  • L and C elements other than the diodes in order to maximize the voltage generated in the rectifier circuit 2 with respect to the frequency of the input signal, elements are newly added to the circuit topologies shown in FIGS. 10A to 10E. It may be added or may be partially deleted.
  • the ground connection section may be used as one of the differential signal input terminals.
  • each rectifying circuit is shown by a lumped constant element, but it is also possible to obtain the same effect by using a distributed constant element such as a microstrip line.
  • the electromagnetic resonance coupling element is used as the insulating element 3
  • a capacitive element, a transformer, or the like may be used.
  • the gate drive circuit according to the present disclosure can be used for an inverter, a power converter, a power system, and the like.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

Circuit d'attaque de grille isolé (1) qui entraîne un élément de commutation à semi-conducteur comprenant : une unité de transmission (10) qui génère un signal de puissance qui sert de base pour l'entraînement de grille d'un élément de commutation à semi-conducteur ; un premier élément isolé (3) qui transmet un signal de puissance dans un état électriquement isolé ; une unité de réception (12) qui réalise un entraînement de grille d'un élément de commutation à semi-conducteur au moyen d'un signal de puissance délivré par le premier élément isolé (3) ; et un circuit de transmission pour transmettre l'état détecté par le côté unité de réception au côté unité de transmission. Le circuit de transmission transmet l'état précité par ramification d'une partie du signal de puissance à l'aide d'un trajet isolé (3c) distinct du trajet qui transmet le signal de puissance sur le premier élément isolé (3).
PCT/JP2019/049901 2018-12-28 2019-12-19 Circuit d'entraînement de grille et dispositif de commutation utilisant ce dernier WO2020137826A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024100787A1 (fr) * 2022-11-09 2024-05-16 日本電信電話株式会社 Émetteur-récepteur de communication sans fil

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533167B1 (fr) * 1969-11-20 1978-02-03
WO2015029363A1 (fr) * 2013-08-27 2015-03-05 パナソニックＩｐマネジメント株式会社 Circuit d'attaque de grille
JP5861056B2 (ja) * 2013-08-23 2016-02-16 パナソニックＩｐマネジメント株式会社 ゲート駆動回路
JP2016158240A (ja) * 2015-02-24 2016-09-01 パナソニック株式会社 駆動装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533167B1 (fr) * 1969-11-20 1978-02-03
JP5861056B2 (ja) * 2013-08-23 2016-02-16 パナソニックＩｐマネジメント株式会社 ゲート駆動回路
WO2015029363A1 (fr) * 2013-08-27 2015-03-05 パナソニックＩｐマネジメント株式会社 Circuit d'attaque de grille
JP2016158240A (ja) * 2015-02-24 2016-09-01 パナソニック株式会社 駆動装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024100787A1 (fr) * 2022-11-09 2024-05-16 日本電信電話株式会社 Émetteur-récepteur de communication sans fil

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