WO2020133782A1 - 干法刻蚀机台及干法刻蚀方法 - Google Patents

干法刻蚀机台及干法刻蚀方法 Download PDF

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Publication number
WO2020133782A1
WO2020133782A1 PCT/CN2019/081065 CN2019081065W WO2020133782A1 WO 2020133782 A1 WO2020133782 A1 WO 2020133782A1 CN 2019081065 W CN2019081065 W CN 2019081065W WO 2020133782 A1 WO2020133782 A1 WO 2020133782A1
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WIPO (PCT)
Prior art keywords
substrate
dry etching
process chamber
lifting
rotating
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PCT/CN2019/081065
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English (en)
French (fr)
Inventor
高鹏飞
丁玎
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Publication of WO2020133782A1 publication Critical patent/WO2020133782A1/zh
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Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Definitions

  • the present application relates to the field of display panel manufacturing processes, in particular to a dry etching machine and a dry etching method.
  • dry etching process In the field of display panel manufacturing, it is necessary to use a dry etching process to remove the surface material of the substrate, combined with the shape of the glue, to etch a film layer with a specific pattern, that is, to achieve film layer patterning.
  • the basic principle of dry etching is to use the glow discharge method to generate plasma containing charged particles such as ions and electrons and neutral atoms, molecules and free radicals with high chemical activity, and the film layer not covered by the glue layer reaction.
  • the dry etching process needs to be completed using a dry etching machine.
  • the dry etching machine includes a process chamber (PC, Process Chamber), and a lower electrode plate and an upper plate are provided in the process chamber.
  • the reactant gas flows into the process chamber from the gas hole of the upper plate, and glow discharge generates plasma, which diffuses downward and reacts with the substrate placed on the lower electrode plate, thereby etching the substrate .
  • the existing dry etching process has certain deficiencies, mainly manifested in the phenomenon that the surface of the upper plate and the side wall of the process cavity will peel with the prolongation of the process cavity.
  • the other products are too late to exclude the formation of the process cavity. It will adhere to the upper plate and the side wall of the process cavity. These peelings and products fall onto the substrate surface during the etching process, causing abnormal etching patterns and seriously affecting product quality.
  • the present application provides a dry etching machine including a process chamber for dry etching a substrate, the process chamber including:
  • the bottom plate is fixed to the bottom of the process chamber, and the bottom plate includes gas holes through which the reaction gas can pass into the process chamber;
  • the lifting component is fixed on the inner side wall of the process chamber and used for lifting the substrate in the vertical direction;
  • a rotating part located inside the process chamber, connected with the lifting part, and used for rotating the substrate in a vertical plane;
  • the rotating member is used in combination with the lifting member to realize the operation of lifting and/or rotating the substrate in the process chamber;
  • the carrying part is located inside the process chamber, and is connected with the rotating part, and is used to carry the substrate;
  • the carrier member includes a fixing device, and the fixing device is used to fix the substrate on the carrier member to ensure that there is no relative movement between the substrate and the carrier member during lifting and/or rotation.
  • a plurality of support columns are provided on the bottom plate at intervals to support the rotating component.
  • the lifting member is fixed to the side wall opposite to the opening of the process chamber.
  • the lifting member includes a first vertical rod fixed along the side wall of the process chamber and a lifting frame that can be lifted along the first vertical rod.
  • the first vertical rod extends from the bottom of the process chamber to the top of the process chamber.
  • the rotating member includes a first horizontal rod fixedly connected to the lifting member and a rotating wheel rotatable about the first horizontal rod in a vertical plane, and the carrying member It is fixedly connected with the rotating wheel and can rotate in the vertical plane with the rotating wheel.
  • the carrying member includes a stage, and a side of the stage carrying the substrate is provided with a liftable thimble, and the thimble can extend or retract into the load Object table.
  • the thimble is made of a flexible material.
  • the fixing device is a fixing clip provided along opposite sides of the bearing member.
  • the fixing clip includes a second horizontal rod, a second vertical rod, a third vertical rod, and a head, and the second horizontal rod is fixedly connected to the bearing member,
  • the second vertical rod can move horizontally along the second horizontal rod
  • the third vertical rod can move vertically along the second vertical rod
  • the head is fixed at the third vertical rod On the pole.
  • the head is made of a flexible material.
  • This application also provides a dry etching method, including the following steps:
  • a dry etching machine which includes a process chamber for dry etching the substrate.
  • the process chamber includes a bottom plate provided with air holes, a lifting member, a rotating member connected to the lifting member, and the A bearing member connected to the rotating member and a fixing device connected to the bearing member;
  • the plasma is released into the process chamber through the air holes to etch the substrate.
  • the carrier member includes a thimble that can extend or contract into the carrier surface of the carrier member, and the thimble is made of a flexible material.
  • the method of fixing the substrate includes:
  • the substrate is fixed on the carrier member by the fixing device.
  • the height of the substrate raised by the lifting member is half the height of the internal space of the process chamber.
  • the plasma is an oxygen plasma.
  • the lifting member includes a first vertical rod fixed along the side wall of the process chamber and a lifting frame that can be lifted along the first vertical rod.
  • the rotating member includes a first horizontal rod fixedly connected to the lifting member and a rotating wheel rotatable about the first horizontal rod in a vertical plane, and the carrying member It is fixedly connected with the rotating wheel and can rotate in the vertical plane with the rotating wheel.
  • the fixing device is a fixing clip provided along opposite sides of the carrying member, and the fixing clip includes a second horizontal rod, a second vertical rod, a third vertical rod and A head, the second horizontal rod is fixedly connected to the bearing member, the second vertical rod can move horizontally along the second horizontal rod, and the third vertical rod can move along the second vertical rod The rod moves vertically, and the head is fixed on the third vertical rod.
  • the steps further include:
  • the substrate is restored to the original position by the rotating member and the lifting member, and the substrate is taken out.
  • the technical solution provided by the present application is to arrange the lifting part and the rotating part in the process chamber so that the etching surface of the substrate faces the direction of the bottom plate, and the bottom plate is provided with a gas hole for the reaction gas to pass, so that the plasma diffuses from the bottom to the substrate To perform etching to prevent impurities from the top and sidewalls of the process cavity from falling to the etching surface of the substrate during the etching process, which affects the etching quality.
  • FIG. 1 is a schematic structural diagram of a process chamber of a dry etching machine provided by an embodiment of the present application
  • FIG. 2 is a schematic diagram of a connection structure of a fastening device and a stage provided by an embodiment of the present application;
  • FIG. 3 is a schematic structural view of a fastening device provided by an embodiment of the present application to fix a substrate on a stage;
  • FIG. 5 is a schematic diagram of the position of the ejector pin before the substrate is placed on the stage provided by the embodiment of the present application;
  • FIG. 6 is a schematic diagram of the substrate provided on the stage provided by the embodiment of the present application.
  • FIG. 7 is a schematic diagram of the lifting member provided by the embodiment of the present application after lifting the substrate;
  • FIG. 8 is a schematic diagram of a rotating member provided by an embodiment of the present application after rotating a substrate.
  • an embodiment of the present application provides a dry etching machine.
  • the dry etching machine includes a process chamber 100 for dry etching a substrate.
  • the process chamber 100 includes The bottom plate 101, the lifting member 102, the rotating member 103, and the carrying member 104.
  • the bottom plate 101 is fixed to the bottom of the process chamber 100, and the bottom plate 101 includes air holes (not shown in the figure) through which reaction gases can pass into the process chamber 100, that is, the dry method provided in this embodiment
  • the reaction gas (plasma generated after ionization) of the etching machine is released from the bottom of the process chamber 100 and diffuses upward.
  • the lifting member 102 is fixed to the inner side wall of the process chamber 100.
  • the lifting member 102 is fixed to the opposite side of the opening of the process chamber 100, and the lifting member 102 can raise/lower the substrate in the vertical direction 10.
  • the rotating member 103 is located inside the process chamber 100 and is connected to the lifting member 102. The rotating member 103 can rotate the substrate 10 in a vertical plane.
  • the rotating member 103 is used in combination with the lifting member 102 to complete the lifting and/or rotating operation of the substrate 10 in the process chamber 100, that is, the lifting member 102 lifts the substrate 10, and then the rotating The component 103 rotates the substrate 10.
  • the dry etching machine provided in this embodiment can lift the substrate to be etched to the upper part of the process cavity, and make the etching surface of the substrate to be etched face down, thereby preventing the top and side walls of the process cavity during the etching process Impurities fall onto the etched surface, affecting the etching quality.
  • the carrying member 104 is located inside the process chamber 100 and is connected to the rotating member 103 for carrying the substrate 10; in addition, the carrying member 104 further includes a fixing device 1042 for fixing the substrate 10, the The fixing device 1042 can ensure that there is no relative movement between the substrate 10 and the carrying member 104 during the lifting and/or rotating process.
  • a plurality of support columns 105 are arranged on the bottom plate 101 at intervals, and when the rotating member 103 is at the lowest position, the support columns 105 can support the The rotating member 103 prevents the rotating member 103 from directly contacting the bottom plate 101 and causing damage to the bottom plate 101.
  • the lifting member 102 includes a first vertical rod 1021 fixedly arranged along the sidewall of the process chamber 100 and a first vertical rod 1021 A lifting frame 1022, the first vertical rod 1021 extends from the bottom of the process chamber 100 to the top of the process cavity 100, the lifting frame 1022 uses the first vertical rod 1021 as a guide rail, Driven by an external transmission mechanism to complete the lifting action, the transmission mechanism may be a transmission gear, a transmission chain or a transmission belt driven by an external motor.
  • the rotating member 103 includes a first horizontal rod 1031 fixedly connected to the lifting member 102 and a vertical plane that can be wound around the first horizontal rod 1031 A rotating rotating wheel 1032, wherein the first horizontal rod 1031 is fixedly connected to the lifting frame 1022. Driven by the lifting member 102, the rotating member 103 can rise or fall in a vertical plane.
  • the rotating wheel 1032 is fixedly connected to the bearing member 104 and drives the bearing member 104 to rotate in a vertical plane.
  • the carrying member 104 further includes a stage 1041, and a side of the stage 1041 carrying the substrate 10 is provided with a liftable ejector pin 1043, the ejector pin 1043 can extend or retract into the stage 1041.
  • the ejector pin 1043 When the substrate 10 is put into the process chamber 100, the ejector pin 1043 is in a position to protrude from the carrying surface of the stage 1041, that is, the substrate is placed on the ejector pin 1043, and then The ejector pin 1043 falls back below the bearing surface, and the substrate 10 is placed on the stage 1041; when removing the substrate, the ejector pin 1043 is first raised to raise the substrate 10, and then the substrate 10 is taken out.
  • the thimble 1043 is made of a flexible material, such as rubber. The mounting and dismounting method of the substrate will be described in detail below.
  • the fixing device 1042 is a fixing clip 1042a provided along two opposite sides of the stage 1041, and the fixing clip 1042a includes a Two horizontal bars 10421, a second vertical bar 10422, a third vertical bar 10423, and a head 10424, the second horizontal bar 10421 is fixedly connected to opposite sides of the stage 1041, and the second vertical bar One end of 10422 is connected to the second horizontal rod 10421, and can move horizontally along the second horizontal rod 10421, and the other end of the second vertical rod 10422 is connected to the third vertical rod 10423.
  • Three vertical rods 10423 can move vertically along the second vertical rod 10422, the head 10424 is fixed on the side of the third vertical rod 10423 facing the stage 1041, and the head 10424 Made of flexible materials, such as rubber.
  • the second vertical rod 10422 and the third vertical rod 10423 are electric components. As shown in FIG. 3, when the substrate 10 is fixed, the second vertical rod 10422 and the third vertical rod 10423 move directionally, so that the head 10424 is pressed tightly on the edge of the substrate 10 to complete the fixing of the substrate 10 .
  • the mounting and dismounting method of the substrate will be described in detail below.
  • the dry etching machine provided in the above embodiment includes a process chamber, and the etched surface of the substrate can be oriented toward the bottom plate by the lifting and rotating parts in the process chamber, and then the etching plasma is passed through the air holes in the bottom plate of the process chamber Passing into the process chamber, the plasma diffuses from bottom to top to the substrate for etching, which can prevent impurities from the top and side walls of the process chamber from falling onto the etching surface of the substrate during the etching process, affecting the etching quality.
  • An embodiment of the present application also provides a dry etching method, as shown in FIG. 4 is a flowchart of the dry etching method provided by the embodiment of the present application, including the following steps:
  • the dry etching method provided by the embodiment of the present application provides a dry etching machine, which includes a process for etching the substrate 10 Chamber 100, the process chamber 100 includes a bottom plate 101 provided with air holes, a lifting member 102, a rotating member 103 connected to the lifting member 102, a bearing member 104 connected to the rotating member 103, and a bearing connected to the bearing Fixture 1042 on component 104.
  • a plurality of support columns 105 are arranged on the bottom plate 101 at intervals, and when the rotating member 103 is at the lowest position, the support column 105 can support the rotating member 103 to prevent the rotating member 103 from The bottom plate 101 directly contacts and damages the bottom plate 101.
  • the lifting member 102 includes a first vertical rod 1021 fixedly disposed along the side wall of the process chamber 100 and a lifting frame 1022 that can be raised and lowered along the first vertical rod 1021.
  • the first vertical rod 1021 is a guide rail, and the lifting action is completed under the drive of an external transmission mechanism.
  • the transmission mechanism may be a transmission gear, a transmission chain, or a transmission belt driven by an external motor.
  • the rotating member 103 includes a first horizontal rod 1031 fixedly connected to the lifting member 102 and a rotating wheel 1032 that can rotate around the first horizontal rod 1031 in a vertical plane, wherein the first horizontal rod 1031 is fixedly connected to the lifting frame 1022. Driven by the lifting member 102, the rotating member 103 can rise or fall in a vertical plane.
  • the rotating wheel 1032 is fixedly connected to the bearing member 104 and drives the bearing member 104 to rotate in a vertical plane.
  • the carrying member 104 further includes a stage 1041, and one side of the stage 1041 carrying the substrate 10 is provided with a liftable pin 1043, and the pin 1043 can extend or retract into the stage 1041 .
  • the fixing device 1042 is a fixing clip 1042a provided along opposite sides of the stage 1041, and the fixing clip 1042a includes a second horizontal rod 10421, a second vertical rod 10422, A third vertical rod 10423 and a head 10424, the second horizontal rod 10421 is fixedly connected to opposite sides of the stage 1041, and one end of the second vertical rod 10422 is connected to the second horizontal rod 10421, And can move horizontally along the second horizontal rod 10421, the other end of the second vertical rod 10422 is connected to the third vertical rod 10423, and the third vertical rod 10423 can be along the second vertical rod
  • the straight rod 10422 moves vertically, and the head 10424 is fixed on the side of the third vertical rod 10423 facing the stage 1041.
  • the head 10424 is made of a flexible material, such as rubber.
  • the second vertical rod 10422 and the third vertical rod 10423 are electric components.
  • Step S102 referring to FIG. 1 and FIG. 4, the substrate 10 is fixed to the carrier member 104 by a fixing device 1042.
  • the method for fixing the substrate 10 to the carrier member 104 includes the following steps: As shown in FIG. 5, before the substrate 10 is placed in the process chamber 100, the ejector pin 1043 extends out of the stage 1041 As shown in FIG. 6, the substrate 10 is placed on the ejector pin 1043; as the ejector pin 1043 retracts below the carrier surface of the stage 1041, the substrate 10 falls onto the carrier surface; The fixing device 1042 fixes the opposite sides of the substrate 10, as shown in FIG. 3, to ensure that there is no relative movement between the substrate 10 and the stage 1041 during lifting and/or rotating.
  • Step S103 referring to FIGS. 4 and 7, the substrate 10 is raised to a certain height by the lifting member 102, so that the substrate 10 rotates with the bottom plate 101, the support column 105 and the top of the process chamber 100 No contact.
  • the substrate 10 is lifted to half the height of the interior space of the process chamber 100.
  • Step S104 referring to FIGS. 4 and 8, the substrate 10 is rotated by the rotating member 103 so that the etching surface of the substrate 10 faces downward.
  • step S104 the height of the substrate 10 can be adjusted again by adjusting the lifting member 102 according to actual production requirements, for example, the substrate 10 is lifted to be close to the top of the process chamber 100, and then the next operation is performed.
  • Step S105 Vacuuming the process chamber 100.
  • step S105 is set after step S104 in this embodiment, it is not limited to this order, and step S105 can be set after step S102 or S103 or S104 according to actual production needs, as long as it is guaranteed Before releasing the plasma into the process chamber, it is sufficient to complete the evacuation of the process chamber.
  • Step S106 Plasma is released into the process chamber 100 through the air holes on the bottom plate 101, and the substrate 10 is etched.
  • reaction gas is passed into the process chamber 100 through the air holes on the bottom plate 101, and the reaction gas is dissociated into plasma by glow discharge during the passage, and diffuses upward with the substrate
  • the etching surface of 10 reacts and performs etching.
  • the reaction gas is at least oxygen
  • the generated plasma is at least oxygen-containing plasma
  • the method of taking the substrate 10 out of the process chamber 100 includes the following steps: adjusting the lifting member 102 to make the substrate 10 at a certain height, such as making the substrate 10 at half the height of the interior space of the process chamber 100, In order to ensure that the substrate 10 has no contact with the bottom plate 101, the support column 105 and the top of the process chamber 100 when rotating; adjust the rotating part 103 so that the etching surface of the substrate 10 faces upward; adjust the lifting part 102 so that The substrate 10 drops to the lowest point; the fastening device 1042 is loosened, the thimble 1043 is raised, and the substrate 10 is taken out, and the entire etching operation is completed.
  • the dry etching method provided by the embodiment of the present application makes the etching surface of the substrate face down, and the plasma for etching diffuses from below to the etching surface of the substrate, which can prevent the top and side walls of the process cavity during the etching process Impurities fall to the etching surface of the substrate and affect the etching quality.

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Abstract

本申请提供了一种干法刻蚀机台及干法刻蚀方法，所述干法刻蚀机台包括用于对基板进行刻蚀的制程腔，所述制程腔包括底板、升降部件、转动部件和承载部件，所述承载部件上设置有基板固定装置，进行干法刻蚀时，调整升降部件和转动部件，使基板的刻蚀面朝下，刻蚀用等离子体从底板上的气孔中释放并向上扩散至刻蚀面，该干法刻蚀机台可防止刻蚀过程中制程腔顶部和侧壁的杂质掉落至刻蚀面而影响刻蚀质量；本申请还提供了一种干法刻蚀方法，包括使用上述干法刻蚀机台对基板进行干法刻蚀的步骤，该方法可避免刻蚀过程中制程腔顶部和侧壁的杂质掉落至刻蚀面而影响刻蚀质量。

Description

干法刻蚀机台及干法刻蚀方法 技术领域
本申请涉及显示面板制程领域，尤其涉及一种干法刻蚀机台及干法刻蚀方法。
 背景技术
在显示面板制造领域，需要使用干法刻蚀工艺去除基板表面材料，结合涂胶形状，刻蚀出具有特定图案的膜层，即实现膜层图案化。干法刻蚀的基本原理是利用辉光放电方式，产生包含离子、电子等带电粒子以及具有高度化学活性的中性原子、分子及自由基的电浆，与未被涂胶层覆盖的膜层反应。
干法刻蚀工艺需要使用干法刻蚀机台来完成，干法刻蚀机台包括制程腔（PC, ProcessChamber），制程腔内设置有下极板和上天板。进行干法刻蚀时，反应气体从上天板的气孔通入制程腔，并辉光放电产生等离子体，等离子体向下扩散，与置于下极板上的基板反应，从而对基板进行刻蚀。
 技术问题
现有的干法刻蚀工艺存在一定的不足，主要表现在，随着制程腔使用时间的延长，上天板表面和制程腔侧壁会出现起皮现象，另外一些来不及排除制程腔的生成物也会附着在上天板和制程腔侧壁上，这些起皮和生成物在刻蚀制程中掉落至基板表面，造成刻蚀图案异常，严重影响产品质量。
 技术解决方案
为了解决上述技术问题，本申请提供的解决方案如下：
本申请提供了一种干法刻蚀机台，包括用于对基板进行干法刻蚀的制程腔，所述制程腔包括：
底板，固定于所述制程腔的底部，所述底板上包括可供反应气体通入所述制程腔内部的气孔；
升降部件，固定于所述制程腔内部侧壁，用于沿竖直方向升降基板；
转动部件，位于所述制程腔内部，与所述升降部件连接，用于在竖直面内旋转基板；
所述转动部件与所述升降部件组合使用，以实现将基板在所述制程腔内升降和/或旋转的操作；
承载部件，位于所述制程腔内部，与所述转动部件连接，用于承载基板；
其中，所述承载部件包括固定装置，所述固定装置用于将基板固定在所述承载部件上，以保证基板与所述承载部件之间在升降和/或旋转过程中无相对移动。
在本申请的干法刻蚀机台中，所述底板上间隔设置有多个支撑柱，用于支撑所述转动部件。
在本申请的干法刻蚀机台中，所述升降部件固定于与所述制程腔开口相对的侧壁。
在本申请的干法刻蚀机台中，所述升降部件包括沿所述制程腔侧壁固定的第一竖直杆和可沿所述第一竖直杆升降的升降架。
在本申请的干法刻蚀机台中，所述第一竖直杆由所述制程腔的底部延伸至所述制程腔的顶部。
在本申请的干法刻蚀机台中，所述转动部件包括与所述升降部件固定连接的第一水平杆和可绕所述第一水平杆在竖直面旋转的转动轮，所述承载部件与所述转动轮固定连接，并可随所述转动轮在竖直面旋转。
在本申请的干法刻蚀机台中，所述承载部件包括载物台，所述载物台承载基板的一面设置有可升降的顶针，所述顶针可伸出或缩入所述所述载物台。
在本申请的干法刻蚀机台中，所述顶针由柔性材料制成。
在本申请的干法刻蚀机台中，所述固定装置为沿所述承载部件相对两边设置的固定夹。
在本申请的干法刻蚀机台中，所述固定夹包括第二水平杆、第二竖直杆、第三竖直杆和头部，所述第二水平杆与所述承载部件固定连接，所述第二竖直杆可沿所述第二水平杆水平移动，所述第三竖直杆可沿所述第二竖直杆竖直移动，所述头部固定在所述第三竖直杆上。
在本申请的干法刻蚀机台中，所述头部由柔性材料制成。
本申请还提供了一种干法刻蚀方法，包括以下步骤：
提供一干法刻蚀机台，包括用于对基板进行干法刻蚀的制程腔，所述制程腔包括设有气孔的底板、升降部件、与所述升降部件相连的转动部件、与所述转动部件相连的承载部件以及连接于所述承载部件上的固定装置；
将基板通过固定装置固定于所述承载部件上；
通过升降部件抬升所述基板至一定高度，使所述基板旋转时与所述底板和制程腔顶部无接触；
通过转动部件转动所述基板，使所述基板的刻蚀面朝下；
对所述制程腔进行抽真空处理；
通过所述气孔向所述制程腔内释放等离子体，对所述基板进行刻蚀。
在本申请的干法刻蚀方法中，所述承载部件上包括可伸出或缩入所述承载部件承载面的顶针，所述顶针由柔性材料制成。
在本申请的干法刻蚀方法中，固定所述基板方法包括：
首先将所述基板放置在伸出所述承载面的顶针上；
然后将所述顶针回缩至所述承载面以下，从而使所述基板放置在所述承载面上；
最后通过所述固定装置将所述基板固定在所述承载部件上。
在本申请的干法刻蚀方法中，通过升降部件将所述基板抬升的高度为所述制程腔内部空间高度的一半。
在本申请的干法刻蚀方法中，所述等离子体为氧等离子体。
在本申请的干法刻蚀方法中，所述升降部件包括沿所述制程腔侧壁固定的第一竖直杆和可沿所述第一竖直杆升降的升降架。
在本申请的干法刻蚀方法中，所述转动部件包括与所述升降部件固定连接的第一水平杆和可绕所述第一水平杆在竖直面旋转的转动轮，所述承载部件与所述转动轮固定连接，并可随所述转动轮在竖直面旋转。
在本申请的干法刻蚀方法中，所述固定装置为沿所述承载部件相对两边设置的固定夹，所述固定夹包括第二水平杆、第二竖直杆、第三竖直杆和头部，所述第二水平杆与所述承载部件固定连接，所述第二竖直杆可沿所述第二水平杆水平移动，所述第三竖直杆可沿所述第二竖直杆竖直移动，所述头部固定在所述第三竖直杆上。
在本申请的干法刻蚀方法中，所述步骤还包括：
完成刻蚀后，通过所述转动部件和所述升降部件将所述基板恢复至初始位置，并取出所述基板。
 有益效果
本申请提供的技术方案通过在制程腔内设置升降部件和转动部件，使基板的刻蚀面朝向底板方向，并在底板上设置供反应气体通入的气孔，使等离子体由下向上扩散至基板，进行刻蚀，可防止刻蚀过程中制程腔顶部和侧壁的杂质掉落至基板刻蚀面，影响刻蚀质量。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的干法刻蚀机台制程腔的结构示意图；
图2是本申请实施例提供的紧固装置与载物台的连接结构示意图；
图3是本申请实施例提供的紧固装置将基板固定在载物台上的结构示意图；
图4是本申请实施例提供的干法刻蚀方法流程图；
图5是本申请实施例提供的基板放置到载物台之前顶针的位置示意图；
图6是本申请实施例提供的基板放置到载物台上的示意图；
图7是本申请实施例提供的升降部件将基板抬升后的示意图；
图8是本申请实施例提供的转动部件将基板旋转后的示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
如图1所示，本申请实施例提供了一种干法刻蚀机台，所述干法刻蚀机台包括用于对基板进行干法刻蚀的制程腔100，所述制程腔100包括底板101、升降部件102、转动部件103和承载部件104。
所述底板101固定于所述制程腔100的底部，并且所述底板101上包含可供反应气体通入所述制程腔100的气孔（图中未示出），即本实施例提供的干法刻蚀机台的反应气体（电离后生成的等离子体）是从制程腔100的底部释放，并向上扩散。所述升降部件102固定于所述制程腔100的内部侧壁，优选地，所述升降部件102固定于所述制程腔100的开口对立面，所述升降部件102可沿竖直方向抬升/降落基板10。所述转动部件103位于所述制程腔100的内部，并与所述升降部件102连接，所述转动部件103可在竖直面内旋转所述基板10。所述转动部件103与所述升降部件102组合使用，可完成基板10在所述制程腔100内升降和/或旋转的操作，即通过所述升降部件102将基板10抬升，然后通过所述转动部件103将基板10旋转。本实施例提供的干法刻蚀机台可将待刻蚀的基板抬升至制程腔上部，并使待刻蚀基板的刻蚀面朝下，从而防止刻蚀过程中制程腔顶部和侧壁的杂质掉落到刻蚀面上，影响刻蚀质量。所述承载部件104位于所述制程腔100的内部，并与所述转动部件103连接，用以承载基板10；另外，所述承载部件104还包括用于固定基板10的固定装置1042，所述固定装置1042可保证基板10与所述承载部件104之间在升降和/或旋转的过程中无相对移动。
具体地，本申请实施例提供的干法刻蚀机台中，所述底板101上间隔设置有多个支撑柱105，当所述转动部件103位于最低位置时，所述支撑柱105可支撑所述转动部件103，防止所述转动部件103与所述底板101直接接触而造成底板101损伤。
具体地，本申请实施例提供的干法刻蚀机台中，所述升降部件102包括沿所述制程腔100侧壁固定设置的第一竖直杆1021和可沿所述第一竖直杆1021升降的升降架1022，所述第一竖直杆1021由所述制程腔100的底部延伸至所述制程腔100的顶部，所述升降架1022以所述第一竖直杆1021为导轨，在外部传动机构的带动下完成升降动作，所述传动机构可以是由外部电机带动的传动齿轮、传动链条或传动带。
具体地，本申请实施例提供的干法刻蚀机台中，所述转动部件103包括与所述升降部件102固定连接的第一水平杆1031和可绕所述第一水平杆1031在竖直面旋转的转动轮1032，其中所述第一水平杆1031与所述升降架1022固定连接。在所述升降部件102的带动下，所述转动部件103可在竖直面内上升或下降。所述转动轮1032与所述承载部件104固定连接，并带动所述承载部件104在竖直面内旋转。
具体地，本申请实施例提供的干法刻蚀机台中，所述承载部件104还包括载物台1041，所述载物台1041承载基板10的一面设置有可升降的顶针1043，所述顶针1043可伸出或缩入所述载物台1041。当将基板10放入所述制程腔100中的过程中，所述顶针1043处于伸出所述载物台1041的承载面的位置，即基板被放置在所述顶针1043上，然后随着所述顶针1043回落至承载面以下，基板10被放置在所述载物台1041上；取出基板时，所述顶针1043先升起将基板10抬升，然后取出基板10。具体地，所述顶针1043由柔性材料制成，如橡胶等。关于基板的安装和拆卸方法，下文会详细介绍。
具体地，如图2所示，本申请实施例提供的干法刻蚀机台中，所述固定装置1042为沿所述载物台1041相对两边设置的固定夹1042a，所述固定夹1042a包括第二水平杆10421、第二竖直杆10422、第三竖直杆10423和头部10424，所述第二水平杆10421与所述载物台1041的相对两边固定连接，所述第二竖直杆10422的一端连接所述第二水平杆10421，并可沿所述第二水平杆10421水平移动，所述第二竖直杆10422的另一端与所述第三竖直杆10423连接，所述第三竖直杆10423可沿所述第二竖直杆10422竖直移动，所述头部10424固定在所述第三竖直杆10423朝向所述载物台1041的一侧，所述头部10424由柔性材料制成，如橡胶等。根据本申请一实施例，所述第二竖直杆10422和所述第三竖直杆10423为电动元件。如图3所示，固定基板10时，所述第二竖直杆10422和所述第三竖直杆10423定向移动，使所述头部10424紧压在基板10边缘，以完成基板10的固定。关于基板的安装和拆卸方法，下文会详细介绍。
上述实施例提供的干法刻蚀机台，包括制程腔，通过制程腔内的升降部件和转动部件可使基板的刻蚀面朝向底板方向，然后将刻蚀等离子体通过制程腔底板上的气孔通入制程腔，使等离子体由下向上扩散至基板，进行刻蚀，可防止刻蚀过程中制程腔顶部和侧壁的杂质掉落至基板刻蚀面上，影响刻蚀质量。
本申请实施例还提供了一种干法刻蚀方法，如图4所示是本申请实施例提供的干法刻蚀方法流程图，包括以下步骤：
步骤S101、参考图1和图4，本申请实施例提供的干法刻蚀方法提供了一干法刻蚀机台，所述干法刻蚀机台包括用于对基板10进行刻蚀的制程腔100，所述制程腔100包括设有气孔的底板101、升降部件102、与所述升降部件102相连的转动部件103、与所述转动部件103相连的承载部件104、以及连接于所述承载部件104上的固定装置1042。
具体地，所述底板101上间隔设置有多个支撑柱105，当所述转动部件103位于最低位置时，所述支撑柱105可支撑所述转动部件103，防止所述转动部件103与所述底板101直接接触而造成底板101损伤。
具体地，所述升降部件102包括沿所述制程腔100侧壁固定设置的第一竖直杆1021和可沿所述第一竖直杆1021升降的升降架1022，所述升降架1022以所述第一竖直杆1021为导轨，在外部传动机构的带动下完成升降动作，所述传动机构可以是由外部电机带动的传动齿轮、传动链条或传动带。
具体地，所述转动部件103包括与所述升降部件102固定连接的第一水平杆1031和可绕所述第一水平杆1031在竖直面旋转的转动轮1032，其中所述第一水平杆1031与所述升降架1022固定连接。在所述升降部件102的带动下，所述转动部件103可在竖直面内上升或下降。所述转动轮1032与所述承载部件104固定连接，并带动所述承载部件104在竖直面内旋转。
具体地，所述承载部件104还包括载物台1041，所述载物台1041承载基板10的一面设置有可升降的顶针1043，所述顶针1043可伸出或缩入所述载物台1041。
具体地，参考图1和图2，所述固定装置1042为沿所述载物台1041相对两边设置的固定夹1042a，所述固定夹1042a包括第二水平杆10421、第二竖直杆10422、第三竖直杆10423和头部10424，所述第二水平杆10421与所述载物台1041的相对两边固定连接，所述第二竖直杆10422的一端连接所述第二水平杆10421，并可沿所述第二水平杆10421水平移动，所述第二竖直杆10422的另一端与所述第三竖直杆10423连接，所述第三竖直杆10423可沿所述第二竖直杆10422竖直移动，所述头部10424固定在所述第三竖直杆10423朝向所述载物台1041的一侧，所述头部10424由柔性材料制成，如橡胶等。根据本申请一实施例，所述第二竖直杆10422和所述第三竖直杆10423为电动元件。
步骤S102、参考图1和图4，将基板10通过固定装置1042固定于所述承载部件104上。
具体地，将基板10固定到所述承载部件104上的方法包括以下步骤：如图5所示，基板10放入所述制程腔100中之前，所述顶针1043伸出所述载物台1041的承载面；如图6所示，将基板10放置到所述顶针1043上；随着所述顶针1043回缩至所述载物台1041的承载面以下，基板10下落至承载面上；通过所述固定装置1042对基板10的相对两边进行固定，如图3所示，以保证基板10与载物台1041之间在升降和/或旋转过程中无相对移动。
步骤S103、参考图4和图7，通过所述升降部件102将基板10抬升至一定高度，使所述基板10旋转时与所述底板101、所述支撑柱105及所述制程腔100的顶部均无接触。
优选地，将基板10抬升至所述制程腔100内部空间高度的一半。
步骤S104、参考图4和图8，通过所述转动部件103转动所述基板10，使所述基板10的刻蚀面朝下。
需要说明的是，完成步骤S104之后，可以根据实际生产需求通过调整升降部件102再次调整基板10的高度，例如将基板10抬升至接近所述制程腔100的顶部，然后再进行下一步操作。
步骤S105、对所述制程腔100进行抽真空处理。
具体地，使用真空泵将所述制程腔100内的空气抽出，以保证干法刻蚀过程在真空环境下进行。需要说明的是，虽然本实施例将步骤S105设置在步骤S104之后，但并不仅限于这一种顺序，可以根据实际生产的需要，将步骤S105设置在步骤S102或S103或S104之后，即只要保证在向制程腔内释放等离子体之前，完成对制程腔的抽真空操作即可。
步骤S106、通过所述底板101上的气孔向所述制程腔100内释放等离子体，对所述基板10进行刻蚀。
具体地，将反应气体通过所述底板101上的气孔通入所述制程腔100，所述反应气体在通入的过程中经辉光放电，解离为等离子体，并向上扩散与所述基板10的刻蚀面反应，进行刻蚀。
具体地，所述反应气体至少是氧气，产生的等离子体至少是含氧等离子体。
进一步地，刻蚀完成后，将基板10取出所述制程腔100的方法包括以下步骤：调整所述升降部件102使基板10处于一定高度，如使基板10处于制程腔100内部空间高度的一半，以保证所述基板10旋转时与所述底板101、所述支撑柱105及所述制程腔100的顶部均无接触；调整转动部件103使基板10的刻蚀面朝上；调整升降部件102使基板10降至最低点；松开所述紧固装置1042，升起所述顶针1043，取出基板10，即完成整个刻蚀操作。
本申请实施例提供的干法刻蚀方法，使基板的刻蚀面朝下，刻蚀用等离子体从下向上扩散至基板刻蚀面，可以防止刻蚀过程中因制程腔顶部和侧壁的杂质掉落至基板刻蚀面而影响刻蚀质量。
综上所述，虽然本申请已以具体实施例揭露如上，但上述实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种干法刻蚀机台，包括用于对基板进行干法刻蚀的制程腔，所述制程腔包括：
    底板，固定于所述制程腔的底部，所述底板上包括可供反应气体通入所述制程腔内部的气孔；
    升降部件，固定于所述制程腔内部侧壁，用于沿竖直方向升降基板；
    转动部件，位于所述制程腔内部，与所述升降部件连接，用于在竖直面内旋转基板；
    所述转动部件与所述升降部件组合使用，以实现将基板在所述制程腔内升降和/或旋转的操作；
    承载部件，位于所述制程腔内部，与所述转动部件连接，用于承载基板；
    其中，所述承载部件包括固定装置，所述固定装置用于将基板固定在所述承载部件上，以保证基板与所述承载部件之间在升降和/或旋转过程中无相对移动。
  2. 根据权利要求1所述的干法刻蚀机台，其中，所述底板上间隔设置有多个支撑柱，用于支撑所述转动部件。
  3. 根据权利要求1所述的干法刻蚀机台，其中，所述升降部件固定于与所述制程腔开口相对的侧壁。
  4. 根据权利要求1所述的干法刻蚀机台，其中，所述升降部件包括沿所述制程腔侧壁固定的第一竖直杆和可沿所述第一竖直杆升降的升降架。
  5. 根据权利要求4所述的干法刻蚀机台，其中，所述第一竖直杆由所述制程腔的底部延伸至所述制程腔的顶部。
  6. 根据权利要求1所述的干法刻蚀机台，其中，所述转动部件包括与所述升降部件固定连接的第一水平杆和可绕所述第一水平杆在竖直面旋转的转动轮，所述承载部件与所述转动轮固定连接，并可随所述转动轮在竖直面旋转。
  7. 根据权利要求1所述的干法刻蚀机台，其中，所述承载部件包括载物台，所述载物台承载基板的一面设置有可升降的顶针，所述顶针可伸出或缩入所述所述载物台。
  8. 根据权利要求7所述的干法刻蚀机台，其中，所述顶针由柔性材料制成。
  9. 根据权利要求1所述的干法刻蚀机台，其中，所述固定装置为沿所述承载部件相对两边设置的固定夹。
  10. 根据权利要求9所述的干法刻蚀机台，其中，所述固定夹包括第二水平杆、第二竖直杆、第三竖直杆和头部，所述第二水平杆与所述承载部件固定连接，所述第二竖直杆可沿所述第二水平杆水平移动，所述第三竖直杆可沿所述第二竖直杆竖直移动，所述头部固定在所述第三竖直杆上。
  11. 根据权利要求10所述的干法刻蚀机台，其中，所述头部由柔性材料制成。
  12. 一种干法刻蚀方法，包括以下步骤：
    提供一干法刻蚀机台，包括用于对基板进行干法刻蚀的制程腔，所述制程腔包括设有气孔的底板、升降部件、与所述升降部件相连的转动部件、与所述转动部件相连的承载部件以及连接于所述承载部件上的固定装置；
    将基板通过固定装置固定于所述承载部件上；
    通过升降部件抬升所述基板至一定高度，使所述基板旋转时与所述底板和制程腔顶部无接触；
    通过转动部件转动所述基板，使所述基板的刻蚀面朝下；
    对所述制程腔进行抽真空处理；
    通过所述气孔向所述制程腔内释放等离子体，对所述基板进行刻蚀。
  13. 根据权利要求12所述的干法刻蚀方法，其中，所述承载部件上包括可伸出或缩入所述承载部件承载面的顶针，所述顶针由柔性材料制成。
  14. 根据权利要求13所述的干法刻蚀方法，其中，固定所述基板方法包括：
    首先将所述基板放置在伸出所述承载面的顶针上；
    然后将所述顶针回缩至所述承载面以下，从而使所述基板放置在所述承载面上；
    最后通过所述固定装置将所述基板固定在所述承载部件上。
  15. 根据权利要求12所述的干法刻蚀方法，其中，通过升降部件将所述基板抬升的高度为所述制程腔内部空间高度的一半。
  16. 根据权利要求12所述的干法刻蚀方法，其中，所述等离子体为氧等离子体。
  17. 根据权利要求12所述的干法刻蚀方法，其中，所述升降部件包括沿所述制程腔侧壁固定的第一竖直杆和可沿所述第一竖直杆升降的升降架。
  18. 根据权利要求12所述的干法刻蚀方法，其中，所述转动部件包括与所述升降部件固定连接的第一水平杆和可绕所述第一水平杆在竖直面旋转的转动轮，所述承载部件与所述转动轮固定连接，并可随所述转动轮在竖直面旋转。
  19. 根据权利要求12所述的干法刻蚀方法，其中，所述固定装置为沿所述承载部件相对两边设置的固定夹，所述固定夹包括第二水平杆、第二竖直杆、第三竖直杆和头部，所述第二水平杆与所述承载部件固定连接，所述第二竖直杆可沿所述第二水平杆水平移动，所述第三竖直杆可沿所述第二竖直杆竖直移动，所述头部固定在所述第三竖直杆上。
  20. 根据权利要求12所述的干法刻蚀方法，其中，所述步骤还包括：
    完成刻蚀后，通过所述转动部件和所述升降部件将所述基板恢复至初始位置，并取出所述基板。
PCT/CN2019/081065 2018-12-29 2019-04-02 干法刻蚀机台及干法刻蚀方法 Ceased WO2020133782A1 (zh)

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