WO2020133779A1 - 有机发光二极管显示面板以及显示装置 - Google Patents

有机发光二极管显示面板以及显示装置 Download PDF

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Publication number
WO2020133779A1
WO2020133779A1 PCT/CN2019/080842 CN2019080842W WO2020133779A1 WO 2020133779 A1 WO2020133779 A1 WO 2020133779A1 CN 2019080842 W CN2019080842 W CN 2019080842W WO 2020133779 A1 WO2020133779 A1 WO 2020133779A1
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Prior art keywords
magnesium
area
layer
electrode layer
transparent conductive
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Ceased
Application number
PCT/CN2019/080842
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English (en)
French (fr)
Inventor
唐芮
张文智
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/472,997 priority Critical patent/US10937993B2/en
Publication of WO2020133779A1 publication Critical patent/WO2020133779A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light

Definitions

  • the present application relates to the field of display technology, in particular to an organic light emitting diode display panel and a display device.
  • OLED Organic Light Emitting Diode
  • cathode structure is a tiled display panel, its material is magnesium silver alloy, or magnesium silver stack structure, because silver has a greater reflectivity for light, when external light passes through the cathode structure , More loss. Therefore, in order to ensure the lighting effect of the electronic components under the screen, such as the camera, the display material (including the TFT circuit, light emitting layer, cathode structure, etc.) above the camera needs to be removed, that is, the digging technology, but this technology corresponds to the digging The hole area cannot be displayed because there is no substance displayed, which is not a full screen in the true sense.
  • the present application provides an organic light emitting diode display panel and a display device to solve the technical problem of digging holes in the display screen in the prior art.
  • An embodiment of the present application provides an organic light emitting diode display panel, which includes an electronic component display area corresponding to a position of an electronic component.
  • the electronic component display area includes: a light transmitting area, and an electrode layer located in the light transmitting area is transparent Conductive layer.
  • the electronic component display area further includes: a pixel circuit area disposed outside the light-transmitting area, including a circuit area corresponding to a driving circuit setting position of the pixel unit, and corresponding driving The signal line area where the circuit signal line is set.
  • the electrode layer located in the circuit area is a transparent conductive layer.
  • the electrode layer located in the circuit area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the circuit area includes a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the transparent conductive layer is located on the light-emitting material layer, and the magnesium-silver alloy layer or the magnesium-silver stack is located on the transparent conductive layer.
  • the electrode layer located in the signal line area is a transparent conductive layer.
  • the electrode layer located in the signal line area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the signal line area includes a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the organic light emitting diode display panel further includes a standard display area surrounding the display area of the electronic component, and the electrode layer located in the standard display area includes a magnesium silver alloy layer or magnesium Silver stack.
  • the electrode layer located in the standard display area further includes a transparent conductive layer.
  • An embodiment of the present application further provides a display device including an organic light emitting diode display panel, the organic light emitting diode display panel including an electronic element display area corresponding to the position of the electronic element, the electronic element display area including:
  • the electrode layer located in the light transmission area is a transparent conductive layer.
  • the electronic component display area further includes:
  • the pixel circuit area disposed outside the light-transmitting area includes a circuit area corresponding to a driving circuit setting position of the pixel unit, and a signal line area corresponding to a driving circuit signal line setting position.
  • the electrode layer located in the circuit area is a transparent conductive layer.
  • the electrode layer located in the circuit area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the circuit area includes a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the transparent conductive layer is located on the luminescent material layer, and the magnesium-silver alloy layer or the magnesium-silver stack is located on the transparent conductive layer.
  • the electrode layer located in the signal line area is a transparent conductive layer.
  • the organic light emitting diode display panel further includes a standard display area surrounding the display area of the electronic component, and the electrode layer located in the standard display area includes a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the standard display area further includes a transparent conductive layer.
  • the present application provides an organic light emitting diode display panel and a display device.
  • the organic light emitting diode display panel includes an electronic component display area corresponding to a position of an electronic component.
  • the electronic component display area includes a light transmitting area, and a light transmitting area located in the light transmitting area
  • the electrode layer is a transparent conductive layer; by setting the electrode layer at the light-transmissive area in the display area of the electronic component as a transparent electrode layer, external light can reach the electronic component below the display screen through the transparent electrode layer, so that there is no need to remove the electronic component above
  • the display material that is, there is no need to dig holes, the electronic component display area can also be displayed normally, to solve the defects of the existing technology that need to dig holes, to achieve a full screen.
  • FIG. 1 Schematic diagram of an existing OLED display panel
  • FIG. 2 is a first schematic diagram of an OLED provided by an embodiment of this application.
  • FIG 3 is an AA' cross-sectional view of an OLED provided by an embodiment of the present application.
  • FIG. 4 is a second schematic diagram of an OLED provided by an embodiment of this application.
  • Fig. 5 is a BB' cross-sectional view of an OLED provided by an embodiment of the present application.
  • FIG. 6 is a third schematic diagram of an OLED provided by an embodiment of this application.
  • FIG. 7 is a CC' cross-sectional view of an OLED provided by an embodiment of this application.
  • FIG. 8 is a preparation flowchart of an OLED provided by an embodiment of the present application.
  • FIG. 9 is a first schematic diagram of OLED preparation provided by an embodiment of the present application.
  • FIG. 10 is a second schematic diagram of the preparation of the OLED provided by the embodiment of the present application.
  • This application is directed to the technical problem of digging holes in the display screen existing in the existing electronic component technology, and the embodiments of this application can solve this problem.
  • the existing OLED (organic light-emitting diode) display has the camera under the display, that is, the electronic component technology, and the cathode structure of the display panel is a magnesium-silver alloy or magnesium-silver stack on the entire surface. It has a large reflectivity to light.
  • the display material in the corresponding area 11 of the electronic component is generally excavated, that is, the digging technology, only the standard display area 12 (that is, the corresponding area 11 of the electronic component) All display areas except the display area can be displayed, and the corresponding area 11 of the electronic component cannot be displayed, which is not a real full screen, that is, the existing electronic component technology has defects and needs to be improved.
  • an embodiment of the present application provides an OLED display panel, which includes an electronic component display area 32 corresponding to the position of an electronic component.
  • the electronic component displays Zone 32 includes:
  • the pixel circuit area 322 includes a circuit area 3221 corresponding to the drive circuit of the pixel unit and a signal line area 3222 corresponding to the signal line of the drive circuit;
  • the light-transmitting area 321 includes an electronic element display area outside the pixel circuit area 322;
  • the electrode layer located in the light-transmitting area 321 is a transparent conductive layer 2301, so that external light can pass through the light-transmitting area 321 to reach the electronic components disposed under the screen, such as cameras, light sensors, etc., so that such electronic
  • the components fulfill the corresponding functions.
  • the electrode layer is a cathode layer, and the entire surface is laid over the pixel definition layer.
  • the electrode layer located in the circuit area is a transparent conductive layer.
  • the electrode layer located in the circuit area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the circuit area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the circuit area includes a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the transparent conductive layer is located on the luminescent material layer, and the magnesium-silver alloy layer or the magnesium-silver stack is located on the transparent conductive layer.
  • the electrode layer located in the signal line area is a transparent conductive layer.
  • the electrode layer located in the signal line area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the signal line region includes a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the organic light emitting diode display panel further includes a standard display area surrounding the display area of the electronic component (that is, the display area excluding all areas except the display area of the electronic component) is located in the standard display area
  • the electrode layer includes a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the standard display area further includes a transparent conductive layer.
  • the transparent conductive layer located in the display area of the electronic component and the transparent conductive layer located in the standard display area are provided in the same layer.
  • the OLED display panel includes a substrate, a driving circuit layer, a pixel definition layer, and a light-emitting layer.
  • the substrate includes a substrate 111, a barrier layer 112, a first gate insulating layer 113, a second gate insulating layer 114, an interlayer insulating layer 115, a planarization layer 116, and a pixel definition layer 117, and the driving circuit layer includes The active layer 120, the source electrode 121, the drain electrode 122, the first gate electrode 123 and the second gate electrode 124.
  • the light emitting layer includes a light emitting unit and an electrode layer.
  • the light emitting unit includes an anode layer 210 and a light emitting material layer 220.
  • the electrode layer includes a transparent electrode layer 2301 disposed in the standard display area 31 and the electronic element display area 32.
  • the electronic element display area 32 includes transparent The light area 321 and the pixel circuit area 322, which include a circuit area 3221 corresponding to the drive circuit of the pixel unit and a signal line area 3222 corresponding to the signal line of the drive circuit.
  • the electrode layer as a transparent electrode layer, while ensuring the normal display, when the external light passes through the electrode layer, the loss is small or no, so that the electronic component area does not need to dig holes.
  • Normal display so as to achieve a full screen in the true sense; and because the electrode layer is a transparent electrode layer in the standard display area, all external light may also affect the display quality, so the following embodiments are proposed.
  • the electrode layer includes a transparent electrode layer 2301 disposed in the standard display area 31 and the electronic component display area 32, and disposed in the standard display area 31
  • the magnesium-silver alloy layer 2302 on the middle transparent electrode layer 2301, the electronic element display area 32 includes a light-transmitting area 321 and a pixel circuit area 322, and the pixel circuit area 322 includes a circuit area 3221 of a driving circuit corresponding to the pixel unit, and The signal line area 3222 corresponding to the signal line of the driving circuit.
  • the electrode layer is divided into two layers, the lower electrode layer is set as a transparent electrode layer, and then a magnesium-silver alloy layer is provided on the transparent electrode layer of the standard display area, so that light can pass through the electronic component better There is no need to dig holes in the display area, realizing a full screen in the true sense, while making it difficult for outside light to enter the standard display area, it is difficult for outside light to affect the display quality.
  • the electrode layer includes a transparent electrode layer 2301 disposed in the standard display area 31 and the electronic element display area 32, and the electronic element display area includes light transmission Area 321 and pixel circuit area 322, the electrode layer further includes a magnesium-silver alloy layer 2302 disposed on the transparent electrode layer 2301 in the standard display area 31 and the pixel circuit area 322, and the pixel circuit area 322 includes a corresponding The circuit area 3221 of the drive circuit of the pixel unit and the signal line area 3222 corresponding to the signal line of the drive circuit.
  • the electrode layer is divided into two layers, the lower electrode layer is set as a transparent electrode layer, and then a magnesium-silver alloy layer is provided on the transparent electrode layer of the standard display area and the pixel circuit area, so that the light can be better Through the display area of electronic components, there is no need to dig holes to achieve a true full screen, which further prevents external light from entering the non-transparent area, making it difficult for external light to affect the display quality.
  • the electrode layer in the light transmission area is a transparent conductive layer
  • the electrode layer in the circuit area is a transparent conductive layer
  • the electrode layer in the signal line area is a transparent conductive layer and magnesium silver
  • the alloy layer is either a transparent conductive layer and a magnesium-silver stack.
  • the electrode layer in the standard display area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the electrode layer in the light-transmitting area is a transparent conductive layer
  • the electrode layer in the circuit area is a magnesium-silver alloy layer or a magnesium-silver stack
  • the electrode layer in the signal line area is The transparent conductive layer and the magnesium-silver alloy layer are either a transparent conductive layer and a magnesium-silver stack.
  • the electrode layer in the standard display area is a transparent conductive layer and a magnesium-silver alloy layer or a transparent conductive layer and a magnesium-silver stack.
  • the electrode layer in the light-transmitting area is a transparent conductive layer
  • the electrode layer in the circuit area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack
  • the electrode layer in the signal line area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack
  • the electrode layer in the standard display area is a transparent conductive layer and a magnesium-silver alloy layer, or It is a transparent conductive layer and magnesium-silver stack.
  • the electrode layer in the light-transmitting area is a transparent conductive layer
  • the electrode layer in the circuit area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack
  • the electrode layer in the signal line area is a transparent conductive layer
  • the electrode layer in the standard display area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the electrode layer in the light-transmitting area is a transparent conductive layer
  • the electrode layer in the circuit area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack
  • the electrode layer in the signal line area is a magnesium-silver alloy layer or a magnesium-silver stack
  • the electrode layer in the standard display area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the electrode layer in the light-transmitting area is a transparent conductive layer
  • the electrode layer in the circuit area is a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack
  • the electrode layer in the signal line area is a magnesium-silver alloy layer or a magnesium-silver stack
  • the electrode layer in the standard display area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • ensuring that the electrode layer in the light-transmitting area is a transparent electrode layer can allow external light to pass better when passing through the display area of the electronic component, with less loss and no need to dig holes, thereby showing true Full screen in the sense that a magnesium-silver alloy layer or a magnesium-silver stack is provided on the transparent electrode layer of at least one of the standard display area, circuit area, and signal line area, or the standard display area, circuit area, and signal line
  • the electrode layer in at least one of the regions is a magnesium-silver alloy layer or a magnesium-silver stack, and different arrangement methods will prevent light from entering the non-transmissive region to different degrees, thereby improving display quality.
  • the substrate may be a flexible substrate, and may be made of plastic with good heat resistance and durability such as polyimide, polyethylene terephthalate, polycarbonate, poly Ethylene naphthalate, polyarylate, polyetherimide, etc. are formed; the substrate may also be formed of various other suitable materials such as metal, glass, etc.
  • the barrier layer is an inorganic material for preventing water vapor invasion and ion implantation
  • the barrier layer material is silicon nitride, silicon oxynitride, silicon oxide, silicon nitride carbide, zinc oxide, aluminum oxide
  • the embodiments of the present application are not limited to this.
  • the gate insulating layer is used to insulate the active layer and the gate, and the gate insulating layer may be an organic material or an inorganic material, and the inorganic material includes silicon nitride or silicon oxide, but the embodiment of the present application It is not limited thereto, and the first gate layer and the second gate layer may be made of the same material or different materials, for example, the first gate layer is made of organic material, and the second gate layer is made of inorganic material.
  • the planarization layer is used to remove unevenness of the substrate
  • the pixel definition layer is used to define a light emitting region
  • the material of the planarization layer and the pixel definition layer may be the same or different, Materials include polyacrylates, polycarbonates, and polystyrene, but the application is not limited thereto.
  • the active layer may include a source region, a drain region, and a channel region, and the active layer may be formed of an inorganic semiconductor such as amorphous silicon or polycrystalline silicon, an organic semiconductor, or an oxide semiconductor.
  • the gate may be formed on the gate insulating layer, and the gate material may be gold, silver, copper, nickel, platinum, palladium, aluminum, molybdenum, or alloys such as aluminum neodymium alloy, molybdenum tungsten alloy, but The embodiments of the present application are not limited thereto, and the first gate and the second gate may be different materials such as the first gate is silver and the second gate is aluminum.
  • the luminescent material layer includes a hole injection layer, a hole transport layer, an exciton recombination layer, an electron transport layer, and an electron injection layer.
  • an embodiment of the present application provides a display device including an organic light emitting diode display panel, the organic light emitting diode display panel includes an electronic component display area corresponding to a position of an electronic component, and the electronic component display area include:
  • the electrode layer located in the light transmission area is a transparent conductive layer.
  • the electrode layer located in the light transmission area is a transparent conductive layer.
  • the electronic component display area further includes:
  • the pixel circuit area disposed outside the light-transmitting area includes a circuit area corresponding to a driving circuit setting position of the pixel unit, and a signal line area corresponding to a driving circuit signal line setting position.
  • the electrode layer located in the circuit area is a transparent conductive layer.
  • the electrode layer located in the circuit area is a magnesium-silver alloy layer or a magnesium-silver stack.
  • the electrode layer located in the circuit area includes a transparent conductive layer and a magnesium-silver alloy layer, or a transparent conductive layer and a magnesium-silver stack.
  • the transparent conductive layer is located on the luminescent material layer, and the magnesium-silver alloy layer or magnesium-silver stack is located on the transparent conductive layer.
  • the electrode layer located in the signal line area is a transparent conductive layer.
  • the organic light-emitting diode display panel further includes a standard display area surrounding the display area of the electronic component, and the electrode layer located in the standard display area includes magnesium-silver alloy Layer or magnesium-silver stack.
  • the electrode layer located in the standard display area further includes a transparent conductive layer.
  • An embodiment of the present application provides an OLED display device, which includes an OLED display panel and a camera.
  • the OLED display panel may be any of the OLED display panels in the above embodiments.
  • the camera is disposed under the OLED display panel.
  • a pixel circuit area and a light-transmitting area are provided on the display panel corresponding to the electronic component display area of the camera, and the electrode layer in the light-transmitting area is controlled to be a transparent conductive layer, so that the external light passes through the electrode layer with little or no loss , No need to dig holes in the display area of electronic components, so as to achieve a full screen display, and the camera can have better lighting and can present a complete and clear image.
  • an embodiment of the present application provides a method for preparing an OLED display panel, which includes:
  • Step S1 providing a substrate
  • Step S2 forming a driving circuit layer on the substrate, the driving circuit layer is patterned to form a driving circuit and a driving circuit signal line;
  • Step S3 forming a pixel definition layer on the driving circuit layer
  • Step S4 forming a light-emitting unit in the light-emitting area defined by the pixel definition layer;
  • Step S5 forming an electrode layer; the portion of the electrode layer located in the light-transmitting area is a transparent conductive layer, the light-transmitting area includes an electronic element display area outside the pixel circuit area, and the electronic element display area is a display panel corresponding to the electronic In the element location area, the pixel circuit area includes a drive circuit corresponding to the pixel unit of the display panel in the display area of the electronic element and an area corresponding to the signal line of the drive circuit.
  • the step of forming the electrode layer includes: forming a transparent conductive layer that tiles the display panel; forming a magnesium-silver alloy layer or magnesium silver that tiles the display panel on the transparent conductive layer Stack; remove the magnesium-silver alloy layer or the magnesium-silver stack in the light-transmitting area.
  • an embodiment of the present application provides a method for preparing an OLED display panel, which includes:
  • Step 91 Prepare a substrate.
  • Step 61 includes providing a substrate 111, forming a barrier layer 112 on the substrate 111, forming an active layer 120 on the barrier layer 112, and forming a first layer on the active layer 120.
  • Step 92 a transparent electrode layer 2301 is formed on the luminescent material layer 220, and the effect is as shown in (2) in FIG. 6;
  • Step 93 a magnesium-silver alloy layer 2302 is formed on the transparent electrode layer 2301, and the magnesium-silver alloy layer is disposed in the standard display area 31, the light transmission area 321, and the pixel circuit area 322, and the effect is as shown in (3) in FIG. 6 Shown
  • Step 94 the magnesium-silver alloy layer in the light-transmitting area 321 is removed, and the effect is shown in (4) in FIG. 6.
  • an embodiment of the present application provides a method for preparing an OLED display panel, which includes:
  • Step 101 Prepare a substrate.
  • Step 71 includes providing a substrate 111, forming a barrier layer 112 on the substrate 111, forming an active layer 120 on the barrier layer 112, and forming a first layer on the active layer 120.
  • Step 102 a transparent electrode layer 2301 is formed on the luminescent material layer 220, and the effect is as shown in (2) in FIG. 7;
  • Step 103 forming a magnesium-silver alloy layer 2302 and a shadowless adhesive layer 2303 on the transparent electrode layer 2301.
  • the magnesium-silver alloy layer 2302 is formed in the standard display area 31 and the pixel circuit area 322, and the shadowless adhesive layer 2303 is formed in The light transmitting area 321, the effect is shown in (3) in FIG. 7;
  • Step 104 the shadowless adhesive layer 2303 on the light-transmitting area 321 is removed, and the effect is shown in (4) in FIG. 7.
  • the material of the transparent electrode layer may be a metal oxide, such as titanium oxide, indium tin oxide, zinc oxide, magnesium oxide, or graphene, carbon nanotubes.
  • metal oxide such as titanium oxide, indium tin oxide, zinc oxide, magnesium oxide, or graphene, carbon nanotubes.
  • low emission is selected
  • the work material ensures the efficiency of electron injection.
  • the coverage area of the transparent electrode layer is not less than the area of the luminescent material layer, and the coverage area of the transparent electrode layer is not greater than the anode coverage layer, so that the thickness of the transparent electrode layer is 5nm-100nm, which is selected in this embodiment
  • the thickness of the transparent electrode layer is 15 nm, so that the transparent electrode layer has better light extraction efficiency, and can effectively protect the light emitting material layer.
  • the thickness of the magnesium-silver alloy layer or the magnesium-silver stack is 5 nm-300 nm. In this embodiment, 140 nm is selected to have a better light extraction efficiency.
  • the method of removing the magnesium-silver alloy layer or the magnesium-silver stack includes plasma bombardment under vacuum, wet etching, laser cutting, etc., but the embodiments of the present application are not limited thereto.
  • a transparent electrode layer can be formed in the light-transmitting area, a magnesium-silver alloy layer or a magnesium-silver stack layer can be provided in the pixel circuit area, and a magnesium-silver alloy layer or a magnesium-silver stack layer can be formed in the standard display area.
  • a transparent electrode layer is formed in the pixel circuit area and the standard display area to directly obtain the desired display panel.
  • a transparent electrode layer is formed in the display area of the electronic component, and a magnesium-silver alloy layer or a magnesium-silver stack is formed in the standard display area. It is not necessary to form a transparent electrode layer in the marked display area.
  • the display panel is required.
  • Embodiments of the present application provide an organic light emitting diode display panel, a method of manufacturing the same, and a display device.
  • the organic light emitting diode display panel includes an electronic element display area corresponding to the position of the electronic element, and the electronic element display area includes a pixel circuit area and light transmission Area, the pixel circuit area includes a circuit area corresponding to the drive circuit of the pixel unit, and a signal line area corresponding to the signal line of the drive circuit; the light-transmitting area includes an electronic element display area outside the pixel circuit area
  • the electrode layer in the light-transmitting area is a transparent conductive layer; by setting the electrode layer in the light-transmitting area as a transparent electrode layer, the display area of the electronic component can be displayed normally without removing display substances, that is, without digging holes.
  • the embodiment of the present application sets the electrode layer in the light-transmitting area as a transparent electrode layer, then sets the transparent electrode layer in the pixel circuit area, and sets the transparent electrode layer in the standard display area to make the outside world
  • the light energy can pass through the display area of the electronic component without digging holes, so as to realize a real full screen; further, in order to prevent external light from affecting the emitted light, the embodiment of the present application sets magnesium on the transparent electrode layer of the standard display area
  • the silver alloy layer or the magnesium-silver stack allows external light to be reflected when passing through the standard display area without affecting the outgoing light; further, in order to prevent the external light from affecting the outgoing light, the embodiments of the present application are transparent in the circuit area and the signal line area
  • a magnesium-silver alloy layer or a magnesium-silver stack is provided on the electrode layer, so that external light is reflected when passing through the pixel circuit area, and does not affect the emitted light; by preparing

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Abstract

本申请提供一种有机发光二极管显示面板以及显示装置，通过将电子元件显示区内透光区处的电极层设置为透明电极层，外界光线通过透明电极层即可到达位于显示屏下方的电子元件，使得无需去除电子元件上方的显示物质，即无需挖孔，则电子元件显示区也可正常显示，解决现有技术需要挖孔的缺陷，实现全面。

Description

有机发光二极管显示面板以及显示装置 技术领域
本申请涉及显示技术领域，尤其是一种有机发光二极管显示面板以及显示装置。
 背景技术
随着全面屏技术的发展，屏下摄像头等电子元件放置在显示屏下的技术是发展趋势。
现有OLED（Organic Light Emitting Diode，有机发光二极管）显示面板的阴极结构为平铺显示面板，其材料为镁银合金、或者镁银叠层结构，由于银对光线具有较大的反射率，外界光线穿过阴极结构时，损耗较多。因此现有技术为了保证屏下电子元件，如摄像头的采光效果，需要将摄像头上方的显示物质（包括TFT电路、发光层、阴极结构等）去除，即挖孔技术，但是这种技术对应的挖孔区域由于没有显示物质，不能显示，不是真正意义上的全面屏。
所以，现有技术存在缺陷，需要改进。
 技术问题
本申请提供一种有机发光二极管显示面板以及显示装置，用以解决现有技术存在的对显示屏进行挖孔的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供了一种有机发光二极管显示面板，其包括对应电子元件位置的电子元件显示区，所述电子元件显示区包括：透光区，位于所述透光区内的电极层为透明导电层。
在本申请提供的有机发光二极管显示面板中，所述电子元件显示区还包括：设置在所述透光区外的像素电路区，包括对应像素单元的驱动电路设置位置的电路区、以及对应驱动电路信号线设置位置的信号线区。
在本申请提供的有机发光二极管显示面板中，位于所述电路区内的电极层为透明导电层。
在本申请提供的有机发光二极管显示面板中，位于所述电路区内的电极层为镁银合金层或者镁银叠层。
在本申请提供的有机发光二极管显示面板中，位于所述电路区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
在本申请提供的有机发光二极管显示面板中，所述透明导电层位于发光材料层上，所述镁银合金层或者镁银叠层位于所述透明导电层上。
在本申请提供的有机发光二极管显示面板中，位于所述信号线区内的电极层为透明导电层。
在本申请提供的有机发光二极管显示面板中，位于所述信号线区内的电极层为镁银合金层或者镁银叠层。
在本申请提供的有机发光二极管显示面板中， 位于所述信号线区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
在本申请提供的有机发光二极管显示面板中，所述有机发光二极管显示面板还包括围绕所述电子元件显示区的标准显示区，位于所述标准显示区内的电极层包括镁银合金层或者镁银叠层。
在本申请提供的有机发光二极管显示面板中，位于所述标准显示区内的电极层还包括透明导电层。
本申请实施例还提供了一种显示装置，其包括有机发光二极管显示面板，所述有机发光二极管显示面板包括对应电子元件位置的电子元件显示区，所述电子元件显示区包括：
透光区，位于所述透光区内的电极层为透明导电层。
在本申请的显示装置中，所述电子元件显示区还包括：
设置在所述透光区外的像素电路区，包括对应像素单元的驱动电路设置位置的电路区、以及对应驱动电路信号线设置位置的信号线区。
在本申请的显示装置中，位于所述电路区内的电极层为透明导电层。
在本申请的显示装置中，位于所述电路区内的电极层为镁银合金层或者镁银叠层。
在本申请的显示装置中，位于所述电路区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
在本申请的显示装置中，所述透明导电层位于发光材料层上，所述镁银合金层或者镁银叠层位于所述透明导电层上。
在本申请的显示装置中，位于所述信号线区内的电极层为透明导电层。
在本申请的显示装置中，所述有机发光二极管显示面板还包括围绕所述电子元件显示区的标准显示区，位于所述标准显示区内的电极层包括镁银合金层或者镁银叠层。
在本申请的显示装置中，位于所述标准显示区内的电极层还包括透明导电层。
 有益效果
本申请提供一种有机发光二极管显示面板以及显示装置，该有机发光二极管显示面板包括对应电子元件位置的电子元件显示区，所述电子元件显示区包括透光区，位于所述透光区内的电极层为透明导电层；通过将电子元件显示区内透光区处的电极层设置为透明电极层，外界光线通过透明电极层即可到达位于显示屏下方的电子元件，使得无需去除电子元件上方的显示物质，即无需挖孔，则电子元件显示区也可正常显示，解决现有技术需要挖孔的缺陷，实现全面屏。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1现有OLED显示面板示意图；
图2为本申请实施例提供的OLED的第一种示意图。
图3为本申请实施例提供的OLED的AA’截面图。
图4为本申请实施例提供的OLED的第二种示意图。
图5为本申请实施例提供的OLED的BB’截面图。
图6为本申请实施例提供的OLED的第三种示意图。
图7为本申请实施例提供的OLED的CC’截面图。
图8为本申请实施例提供的OLED的制备流程图。
图9为本申请实施例提供的OLED制备的第一示意图。
图10为本申请实施例提供的OLED制备的第二示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有电子元件技术存在的对显示屏进行挖孔的技术问题，本申请实施例可以解决该问题。
如图1所示，现有的OLED（有机发光二极管）显示器将摄像头设置于显示屏下，即电子元件技术，而显示面板的阴极结构为整面的镁银合金或者镁银叠层，由于银对光线具有较大的反射率，为了使摄像头有更好的采光，一般将电子元件对应区域11的显示物质进行挖除，即挖孔技术，则只有标准显示区12（即电子元件对应区域11之外的所有显示区）能进行显示，电子元件对应区域11无法显示，不是真正意义上的全面屏，即现有电子元件技术存在缺陷，需要改进。
如图2、图3，图4、图5，图6、图7所示，本申请实施例提供一种OLED显示面板，其包括对应电子元件位置的电子元件显示区32，所述电子元件显示区32包括：
像素电路区322，包括对应像素单元的驱动电路的电路区3221、以及对应驱动电路信号线的信号线区3222；
透光区321，包括所述像素电路区322之外的电子元件显示区；
其中，位于所述透光区321内的电极层为透明导电层2301，这样外界光线即可穿过透光区321，到达设置在屏下的电子元件，如摄像头、光线传感器等，使得这样电子元件实现对应的功能。
在一种实施例中，电极层为阴极层，整面铺设在像素定义层上方。
在一种实施例中，位于所述电路区内的电极层为透明导电层。
在一种实施例中，位于所述电路区内的电极层为镁银合金层或者镁银叠层。
在一种实施例中，位于所述电路区内的电极层为镁银合金层或者镁银叠层。
在一种实施例中，位于所述电路区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
在一种实施例中，所述透明导电层位于发光材料层上，所述镁银合金层或者镁银叠层位于所述透明导电层上。
在一种实施例中，位于所述信号线区内的电极层为透明导电层。
在一种实施例中，位于所述信号线区内的电极层为镁银合金层或者镁银叠层。
在一种实施例中，位于所述信号线区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
在一种实施例中，所述有机发光二极管显示面板还包括围绕所述电子元件显示区的标准显示区（即显示区去除电子元件显示区之外的所有区域），位于所述标准显示区内的电极层包括镁银合金层或者镁银叠层。
在一种实施例中，位于所述标准显示区内的电极层还包括透明导电层。
在一种实施例中，位于电子元件显示区的透明导电层、和位于标准显示区的透明导电层同层设置。
如图2、图3，图4、图5，图6、图7所示，本申请实施例提供一种OLED显示面板，该OLED显示面板包括基板、驱动电路层、像素定义层、发光层，所述基板包括衬底111、阻挡层112、第一栅极绝缘层113、第二栅极绝缘层114、层间绝缘层115、平坦化层116和像素定义层117，所述驱动电路层包括有源层120、源极121、漏极122、第一栅极123和第二栅极124，所述发光层包括发光单元和电极层，所述发光单元包括阳极层210，发光材料层220。
在一种实施例中，如图2、图3所示，所述电极层包括设置于所述标准显示区31和电子元件显示区32的透明电极层2301，所述电子元件显示区32包括透光区321和像素电路区322，所述像素电路区322包括对应像素单元的驱动电路的电路区3221、以及对应驱动电路信号线的信号线区3222。
本申请实施例通过将所述电极层设置为透明电极层，使得在保证正常显示的同时，使得外界光线穿过电极层时，损耗较小甚至不损耗，从而使得电子元件区无需挖孔，可正常显示，从而实现真正意义上的全面屏；而标准显示区由于电极层为透明电极层，也会通过所有的外界光可能影响到显示质量，所以提出下述实施例。
在一种实施例中，如图4、图5所示，所述电极层包括设置于所述标准显示区31和电子元件显示区32的透明电极层2301，以及设置于所述标准显示区31中透明电极层2301上的镁银合金层2302，所述电子元件显示区32包括透光区321和像素电路区322，所述像素电路区322包括对应像素单元的驱动电路的电路区3221、以及对应驱动电路信号线的信号线区3222。
本申请实施例通过将电极层分为两层，将下面一层电极层设置为透明电极层，然后在标准显示区的透明电极层上设置镁银合金层，使得光线能较好的通过电子元件显示区，无需挖孔，实现真正意义上的全面屏，同时使得外界光线难以进入标准显示区，使外界光线难以影响显示质量。
在一种实施例中，如图6、图7所示，所述电极层包括设置于所述标准显示区31和电子元件显示区32的透明电极层2301，所述电子元件显示区包括透光区321和像素电路区322，所述电极层还包括设置于所述标准显示区31和所述像素电路区322中透明电极层2301上的镁银合金层2302，所述像素电路区322包括对应像素单元的驱动电路的电路区3221、以及对应驱动电路信号线的信号线区3222。
本申请实施例通过将电极层分为两层，将下面一层电极层设置为透明电极层，然后在标准显示区和像素电路区的透明电极层上设置镁银合金层，使得光线能较好的通过电子元件显示区，无需挖孔，实现真正意义上的全面屏，进一步的防止了外界光线进入非透光区，使外界光线难以影响显示质量。
在一种实施例中，所述透光区内的电极层为透明导电层，所述电路区内的电极层为透明导电层，所述信号线区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层，所述标准显示区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层。
在一种实施例中，所述透光区内的电极层为透明导电层，所述电路区内的电极层为镁银合金层或者镁银叠层，所述信号线区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层，所述标准显示区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层。
在一种实施例中，所述透光区内的电极层为透明导电层，所述电路区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层，所述信号线区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层，所述标准显示区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层。
在一种实施例中，所述透光区内的电极层为透明导电层，所述电路区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层，所述信号线区内的电极层为透明导电层，所述标准显示区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层。
在一种实施例中，所述透光区内的电极层为透明导电层，所述电路区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层，所述信号线区内的电极层为镁银合金层或者镁银叠层，所述标准显示区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层。
在一种实施例中，所述透光区内的电极层为透明导电层，所述电路区内的电极层为透明导电层和镁银合金层，或者为透明导电层和镁银叠层，所述信号线区内的电极层为镁银合金层或者镁银叠层，所述标准显示区内的电极层为镁银合金层或者镁银叠层。
在本申请实施例中，保证所述透光区内的电极层为透明电极层，则可以使得外界光通过电子元件显示区时能较好的通过，损耗较小，无需挖孔，从而显示真正意义上的全面屏，而在标准显示区、电路区、像信号线区中的至少一个的透明电极层上设置镁银合金层或者镁银叠层，或者使标准显示区、电路区、信号线区中的至少一个内的电极层为镁银合金层或者镁银叠层，不同的设置方式将不同程度的防止光线进入非透光区，从而提高显示品质。
在一种实施例中，所述衬底可为柔性基板，并且可以由具有良好耐热性和耐久性的塑料诸如聚酰亚胺、聚对苯二甲酸乙二醇酯、聚碳酸酯、聚萘二甲酸乙二醇酯、聚芳酯、聚醚酰亚胺等形成；所述衬底还可以由各种其它合适的材料诸如金属、玻璃等形成。
在一种实施例中，所述阻挡层为无机材料，用于防止水汽入侵以及离子注入，所述阻挡层材料为氮化硅、氮氧化硅、氧化硅、氮碳化硅、氧化锌、氧化铝，但本申请实施例不限于此。
在一种实施例中，栅极绝缘层用于使有源层和栅极绝缘，且栅极绝缘层可为有机材料或者无机材料，无机材料包括氮化硅或氧化硅，但本申请实施例不限于此，且第一栅极层与第二栅极层可为相同材料或者为不同材料制成，例如第一栅极层为有机材料制成，第二栅极层为无机材料制成。
在一种实施例中，所述平坦化层用于去除所述基板的不平，所述像素定义层用于定义发光区域，所述平坦化层与所述像素定义层的材料可相同或者不同，材料包括、聚丙烯酸酯类、聚碳酸脂类、聚苯乙烯，但本申请不限于此。
在一种实施例中，所述有源层可以包括源区、漏区和沟道区，所述有源层可由无机半导体诸如非晶硅或多晶硅、有机半导体、或氧化物半导体形成。
在一种实施例中，栅极可以形成在栅极绝缘层上，栅极材料可为金、银、铜、镍、铂、钯、铝、钼或合金诸如铝钕合金、钼钨合金，但本申请实施例不限于此，且第一栅极与第二栅极可为不同材料例如第一栅极为银，第二栅极为铝。
在一种实施例中，所述发光材料层包括空穴注入层、空穴传输层、激子复合层、电子传输层和电子注入层。
在一种实施例中，本申请实施例提供了一种显示装置，其包括有机发光二极管显示面板，所述有机发光二极管显示面板包括对应电子元件位置的电子元件显示区，所述电子元件显示区包括：
透光区，位于所述透光区内的电极层为透明导电层。
透光区，位于所述透光区内的电极层为透明导电层。
在一种实施例中，在本申请的显示装置中，所述电子元件显示区还包括：
设置在所述透光区外的像素电路区，包括对应像素单元的驱动电路设置位置的电路区、以及对应驱动电路信号线设置位置的信号线区。
在一种实施例中，在本申请的显示装置中，位于所述电路区内的电极层为透明导电层。
在一种实施例中，在本申请的显示装置中，位于所述电路区内的电极层为镁银合金层或者镁银叠层。
在一种实施例中，在本申请的显示装置中，位于所述电路区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
在一种实施例中，在本申请的显示装置中，所述透明导电层位于发光材料层上，所述镁银合金层或者镁银叠层位于所述透明导电层上。
在一种实施例中，在本申请的显示装置中，位于所述信号线区内的电极层为透明导电层。
在一种实施例中，在本申请的显示装置中，所述有机发光二极管显示面板还包括围绕所述电子元件显示区的标准显示区，位于所述标准显示区内的电极层包括镁银合金层或者镁银叠层。
在一种实施例中，在本申请的显示装置中，位于所述标准显示区内的电极层还包括透明导电层。
本申请实施例提供一种OLED显示装置，其包括OLED显示面板和摄像头，所述OLED显示面板可为上述实施例中的任一OLED显示面板，所述摄像头设置于所述OLED显示面板下，通过在显示面板对应所述摄像头的电子元件显示区设置像素电路区和透光区，并控制透光区内的电极层为透明导电层，使得外界光在通过电极层时，损耗较小甚至无损耗，无需在电子元件显示区挖孔，从而实现全面屏显示，且摄像头能有较好的采光，可呈现完整清晰的像。
如图8所示，本申请实施例提供一种OLED显示面板制备方法，其包括：
步骤S1，提供基板；
步骤S2，在所述基板上形成驱动电路层，所述驱动电路层图案化形成有驱动电路以及驱动电路信号线；
步骤S3，在所述驱动电路层上形成像素定义层；
步骤S4，在所述像素定义层定义的发光区域内形成发光单元；
步骤S5，形成电极层；所述电极层位于透光区的部分为透明导电层，所述透光区包括像素电路区之外的电子元件显示区，所述电子元件显示区为显示面板对应电子元件位置的区域，所述像素电路区包括所述电子元件显示区内显示面板对应像素单元的驱动电路以及对应驱动电路信号线的区域。
在一种实施例中，所述形成电极层的步骤包括：形成平铺所述显示面板的透明导电层；在所述透明导电层上形成平铺所述显示面板的镁银合金层或者镁银叠层；去除位于所述透光区内的镁银合金层或者镁银叠层。
如图9所示，本申请实施例提供一种OLED显示面板制备方法，其包括：
步骤91，制备基板，所述步骤61包括提供衬底111，在所述衬底111上形成阻挡层112，在所述阻挡层112形成有源层120，在所述有源层120上形成第一栅极绝缘层113，在所述第一栅极绝缘层113上形成第一栅极123，在第一栅极上123形成第二栅极绝缘层114，在第二栅极绝缘层114上形成第二栅极124，在所述第二栅极124上形成层间绝缘层115，在所述第一栅极绝缘层113、第二栅极绝缘层114和所述层间绝缘层中间设置有过孔，在过孔中分别形成源极121和漏极122，在所述源极121与漏极122上形成平坦化层116，在所述平坦化层116上形成像素定义层118，在所述像素定义层118定义的发光区域内形成阳极层210，在所述阳极层210上形成发光材料层220，效果如图6中的（1）所示；
步骤92，在所述发光材料层220上形成透明电极层2301，效果如图6中的（2）所示；
步骤93，在所述透明电极层2301上形成镁银合金层2302，所述镁银合金层设置在标准显示区31、透光区321和像素电路区322，效果如图6中的（3）所示；
步骤94，去除透光区321的镁银合金层，效果如图6中的（4）所示。
如图10所示，本申请实施例提供一种OLED显示面板制备方法，其包括：
步骤101，制备基板，所述步骤71包括提供衬底111，在所述衬底111上形成阻挡层112，在所述阻挡层112形成有源层120，在所述有源层120上形成第一栅极绝缘层113，在所述第一栅极绝缘层113上形成第一栅极123，在第一栅极上123形成第二栅极绝缘层114，在第二栅极绝缘层114上形成第二栅极124，在所述第二栅极124上形成层间绝缘层115，在所述第一栅极绝缘层113、第二栅极绝缘层114和所述层间绝缘层中间设置有过孔，在过孔中分别形成源极121和漏极122，在所述源极121与漏极122上形成平坦化层116，在所述平坦化层116上形成像素定义层118，在所述像素定义层118定义的发光区域内形成阳极层210，在所述阳极层210上形成发光材料层220，效果如图7中的（1）所示；
步骤102，在所述发光材料层220上形成透明电极层2301，效果如图7中的（2）所示；
步骤103，在透明电极层2301上形成镁银合金层2302和无影胶层2303，所述镁银合金层2302形成于标准显示区31和像素电路区322，所述无影胶层2303形成于透光区321，效果如图7中的（3）所示；
步骤104，去除透光区321上无影胶层2303，效果如图7中的（4）所示。
在一种实施例中，透明电极层的材料可为金属氧化物，如氧化钛、氧化铟锡、氧化锌、氧化镁，也可以是石墨烯、碳纳米管，本实施例选择具有低逸出功的材料，保证电子注入效率。
在一种实施例中，使透明电极层的覆盖面积不小于发光材料层的面积，且透明电极层的覆盖面积不大于阳极覆盖层，使透明电极层的厚度为5nm-100nm，本实施例选择透明电极层的厚度为15nm，使得透明电极层具有较好的出光效率，且可有效保护发光材料层。
在一种实施例中，使镁银合金层或者镁银叠层的厚度为5nm-300nm，本实施例选择140nm，可使其具有较好的出光效率。
在一种实施例中，去除镁银合金层或者镁银叠层的方式包括在真空下等离子体轰击、湿蚀刻、激光切割等方式，但本申请实施例不限于此。
在一种实施例中，可在透光区形成透明电极层、在像素电路区设置镁银合金层或者镁银叠层，在标准显示区形成镁银合金层或者镁银叠层，无需先在像素电路区和标准显示区形成透明电极层，直接得到所需显示面板。
在一种实施例中，为了降低工艺难度，在电子元件显示区形成透明电极层，在标准显示区形成镁银合金层或者镁银叠层，无需在标注显示区形成透明电极层，直接得到所需显示面板。
根据以上实施例可知：
本申请实施例提供一种有机发光二极管显示面板及其制备方法、显示装置，该有机发光二极管显示面板包括对应电子元件位置的电子元件显示区，所述电子元件显示区包括像素电路区和透光区，所述像素电路区包括对应像素单元的驱动电路的电路区、以及对应驱动电路信号线的信号线区；所述透光区包括所述像素电路区之外的电子元件显示区，位于所述透光区内的电极层为透明导电层；通过将透光区的电极层设置为透明电极层，使得无需去除显示物质，即无需挖孔，则电子元件显示区也可正常显示，解决现有电子元件技术的缺陷，实现全面屏；本申请实施例通过将透光区的电极层设置为透明电极层，然后在像素电路区设置透明电极层，在标准显示区设置透明电极层，使外界光能较好的通过电子元件显示区，无需挖孔，从而实现真正意义上的全面屏；进一步的，为了防止外界光影响出射光，本申请实施例在标准显示区的透明电极层上设置镁银合金层或者镁银叠层，使得外界光线在经过标准显示区时被反射，不影响出射光；进一步的，为了防止外界光影响出射光，本申请实施例在电路区和信号线区的透明电极层上设置镁银合金层或者镁银叠层，使外界光线在经过像素电路区时被反射，不影响出射光；通过在发光层上制备透明电极层，然后在透明电极层上制备镁银合金层或者镁银叠层，然后去除透光区的镁银合金层或者镁银叠层，使得在制备过程中不会损坏透明电极层；而透明电极层的材料选取具有低逸出功的材料，使其具有良好的显示性能；通过控制透明电极层的厚度，使其有良好的出光效率的同时，保护发光材料层。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种有机发光二极管显示面板，其包括对应电子元件位置的电子元件显示区，所述电子元件显示区包括：
    透光区，位于所述透光区内的电极层为透明导电层。
  2. 如权利要求1所述的有机发光二极管显示面板，其中，所述电子元件显示区还包括：
    设置在所述透光区外的像素电路区，包括对应像素单元的驱动电路设置位置的电路区、以及对应驱动电路信号线设置位置的信号线区。
  3. 如权利要求2所述的有机发光二极管显示面板，其中，位于所述电路区内的电极层为透明导电层。
  4. 如权利要求2所述的有机发光二极管显示面板，其中，位于所述电路区内的电极层为镁银合金层或者镁银叠层。
  5. 如权利要求2所述的有机发光二极管显示面板，其中，位于所述电路区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
  6. 如权利要求5所述的有机发光二极管显示面板，其中，所述透明导电层位于发光材料层上，所述镁银合金层或者镁银叠层位于所述透明导电层上。
  7. 如权利要求2所述的有机发光二极管显示面板，其中，位于所述信号线区内的电极层为透明导电层。
  8. 如权利要求2所述的有机发光二极管显示面板，其中，位于所述号线区内的电极层为镁银合金层或者镁银叠层。
  9. 如权利要求2所述的有机发光二极管显示面板，其中，位于所述信号线区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
  10. 如权利要求2所述的有机发光二极管显示面板，其中，所述有机发光二极管显示面板还包括围绕所述电子元件显示区的标准显示区，位于所述标准显示区内的电极层包括镁银合金层或者镁银叠层。
  11. 如权利要求10所述的有机发光二极管显示面板，其中，位于所述标准显示区内的电极层还包括透明导电层。
  12. 一种显示装置，其包括有机发光二极管显示面板，所述有机发光二极管显示面板包括对应电子元件位置的电子元件显示区，所述电子元件显示区包括：
    透光区，位于所述透光区内的电极层为透明导电层。
  13. 如权利要求12所述的显示装置，其中，所述电子元件显示区还包括：
    设置在所述透光区外的像素电路区，包括对应像素单元的驱动电路设置位置的电路区、以及对应驱动电路信号线设置位置的信号线区。
  14. 如权利要求13所述的显示装置，其中，位于所述电路区内的电极层为透明导电层。
  15. 如权利要求13所述的显示装置，其中，位于所述电路区内的电极层为镁银合金层或者镁银叠层。
  16. 如权利要求13所述的显示装置，其中，位于所述电路区内的电极层包括透明导电层和镁银合金层，或者透明导电层和镁银叠层。
  17. 如权利要求16所述的显示装置，其中，所述透明导电层位于发光材料层上，所述镁银合金层或者镁银叠层位于所述透明导电层上。
  18. 如权利要求13所述的显示装置，其中，位于所述信号线区内的电极层为透明导电层。
  19. 如权利要求13所述的显示装置，其中，所述有机发光二极管显示面板还包括围绕所述电子元件显示区的标准显示区，位于所述标准显示区内的电极层包括镁银合金层或者镁银叠层。
  20. 如权利要求19所述的显示装置，其中，位于所述标准显示区内的电极层还包括透明导电层。
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