WO2020133718A1 - 高穿透性液晶显示面板制造方法及其显示面板 - Google Patents

高穿透性液晶显示面板制造方法及其显示面板 Download PDF

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WO2020133718A1
WO2020133718A1 PCT/CN2019/078065 CN2019078065W WO2020133718A1 WO 2020133718 A1 WO2020133718 A1 WO 2020133718A1 CN 2019078065 W CN2019078065 W CN 2019078065W WO 2020133718 A1 WO2020133718 A1 WO 2020133718A1
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layer
refractive index
insulating layer
interlayer insulating
decreasing
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French (fr)
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艾飞
陆鹏
罗成志
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/475,379 priority Critical patent/US10976586B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Definitions

  • the invention relates to a method for manufacturing a display panel, in particular to a method for manufacturing a high-penetration liquid crystal display panel and a high-penetration liquid crystal display panel, which can reduce the reflectivity of light between multiple film layers, thereby improving the The light transmittance of the high-penetration liquid crystal display panel.
  • TFT-LCD Thin Film Transistor Liquid Display
  • materials that have a greater impact on the penetration rate include silicon oxide (SiOx), silicon nitride (SiNx), indium tin oxide (Indium Tin Oxide, ITO), and flat layers.
  • Multilayer film structure The refractive index and thickness of each film will affect the overall penetration of the multilayer film. Therefore, the permeability of the multilayer film can be improved by adjusting parameters such as the film quality, thickness, and film layer structure of each film.
  • the difference between the refractive index of silicon oxide (SiOx) layer (1.45) and the refractive index of silicon nitride (SiNx) layer (1.92) is large, so the reflectivity at the interface is high, which will cause a decrease in penetration .
  • the present invention provides a method for manufacturing a high-penetration liquid crystal display panel and a high-penetration liquid crystal display panel.
  • the main object of the present invention is to provide a method for manufacturing a high-penetration liquid crystal display panel, including:
  • the step of forming a graded index layer includes depositing a silicon nitride layer on the glass substrate, and then depositing a graded index layer on the silicon nitride layer, wherein the graded index layer is made of silicon oxide, and the refractive index
  • the graded layer includes a lower refractive index decreasing layer and a lower refractive index constant layer, the refractive index of the lower refractive index decreasing layer gradually decreases along the direction away from the silicon nitride layer, and the lower constant refractive index layer is deposited On the lower refractive index decreasing layer;
  • the step of forming a gate insulating layer includes depositing a gate insulating layer on the graded index layer;
  • the first interlayer insulating layer forming step includes depositing a first interlayer insulating layer onto the gate insulating layer, wherein the first interlayer insulating layer includes a medium refractive index increasing layer, a medium refractive index constant layer, and a medium refractive Rate decreasing layer; the refractive index of the middle refractive index increasing layer gradually increases along the direction away from the gate insulating layer; the middle refractive index constant layer is formed on the middle refractive index increasing layer, and the The refractive index of the medium refractive index constant layer is constant; the refractive index of the medium refractive index decreasing layer gradually decreases in a direction away from the medium refractive index constant layer; and
  • the second interlayer insulating layer forming step includes depositing a second interlayer insulating layer onto the first interlayer insulating layer.
  • the second interlayer insulating layer includes an upper refractive index decreasing layer and an upper refractive index constant layer; the refractive index of the upper refractive index decreasing layer is along the distance away from the first layer The direction of the insulating layer decreases gradually; the upper refractive index constant layer is formed on the upper refractive index decreasing layer, and the refractive index of the upper refractive index constant layer is constant.
  • the silicon oxide of the graded-refractive-index layer is formed by reacting tetraethoxysilane and oxygen as reactants through a chemical reaction by plasma enhanced chemical vapor deposition; the lower refractive index decreases
  • the layer is formed by continuously changing the reaction ratio of tetraethoxysilane/oxygen, and the power of the plasma generated in the plasma enhanced chemical vapor deposition method to make the film quality of silicon oxide gradually become denser and looser, so that the lower refractive index decreases A gradient region with a refractive index from high to low is formed in the layer.
  • the gate insulating layer is made of silicon oxide; the first interlayer insulating layer is made of silicon nitride; and the second interlayer insulating layer is made of silicon oxide.
  • the silicon nitride of the first interlayer insulating layer is formed by reacting ammonia/silicon methane as a reactant through a plasma-enhanced chemical vapor deposition method; the intermediate refractive index increases The layer is formed by continuously changing the ratio of ammonia/silicon methane and the power of the plasma generated in the plasma enhanced chemical vapor deposition method to make the film quality of silicon nitride gradually loose and dense, so that the middle refractive index increasing layer is formed Gradient region with low to high refractive index; the medium refractive index decreasing layer is to change the density of silicon nitride film by continuously changing the ratio of ammonia/silicomethane and the power of plasma generation in plasma enhanced chemical vapor deposition It is gradually loosened and formed so that a gradient region with a refractive index from high to low is formed in the medium refractive index decreasing layer.
  • the upper refractive index decreasing layer of the second interlayer insulating layer is generated by continuously changing the ratio of tetraethoxysilane/oxygen and plasma enhanced chemical vapor deposition
  • the power causes the film quality of silicon oxide to gradually become loose and dense, so that a gradient region with a refractive index from high to low is formed in the upper refractive index decreasing layer.
  • the manufacturing method further includes: a flat layer forming step including forming a flat layer on the second interlayer insulating layer; a transparent electrode layer forming step including forming a transparent electrode layer on the flat On the layer; and a passivation layer forming step, including forming a passivation layer on the transparent electrode layer
  • the transparent electrode layer is made of indium tin oxide; the passivation layer is made of silicon nitride.
  • Another object of the present invention is to provide a high-penetration liquid crystal display panel, including:
  • a graded refractive index layer is formed on the silicon nitride layer, and includes a lower refractive index decreasing layer and a lower refractive index constant layer; the lower refractive index decreasing layer is formed on the silicon nitride layer, and the The refractive index of the lower refractive index decreasing layer gradually decreases along the direction away from the silicon nitride layer; the lower refractive index constant layer is formed on the lower refractive index decreasing layer;
  • the first interlayer insulating layer is formed on the gate insulating layer, and includes a medium refractive index increasing layer, a medium refractive index constant layer, and a medium refractive index decreasing layer; the refractive index of the medium refractive index increasing layer is along the distance The direction of the gate insulating layer gradually increases; the middle refractive index constant layer is formed on the middle refractive index increasing layer, and the refractive index of the middle refractive index constant layer is constant; the middle refractive index decreases The refractive index of the layer gradually decreases in a direction away from the medium refractive index constant layer; and
  • a second interlayer insulating layer formed on the first interlayer insulating layer, and including an upper refractive index decreasing layer and an upper refractive index constant layer; the refractive index of the upper refractive index decreasing layer is away from the first The direction of the interlayer insulating layer decreases; the upper refractive index constant layer is formed on the upper refractive index decreasing layer, and the refractive index of the upper refractive index constant layer is constant.
  • the gate insulating layer is a silicon oxide layer.
  • Another object of the present invention is to provide a method for manufacturing a high-penetration liquid crystal display panel, including:
  • the step of forming a graded index layer includes depositing a silicon nitride layer on the glass substrate, and then depositing a graded index layer on the silicon nitride layer, wherein the graded index layer is made of silicon oxide, and the refractive index
  • the graded layer includes a lower refractive index decreasing layer and a lower refractive index constant layer, the refractive index of the lower refractive index decreasing layer gradually decreases along the direction away from the silicon nitride layer, and the lower constant refractive index layer is deposited On the lower refractive index decreasing layer;
  • the step of forming a gate insulating layer includes depositing a gate insulating layer on the graded index layer;
  • the first interlayer insulating layer forming step includes depositing a first interlayer insulating layer onto the gate insulating layer, wherein the first interlayer insulating layer includes a medium refractive index increasing layer, a medium refractive index constant layer, and a medium refractive Rate decreasing layer; the refractive index of the middle refractive index increasing layer gradually increases along the direction away from the gate insulating layer; the middle refractive index constant layer is formed on the middle refractive index increasing layer, and the The refractive index of the medium refractive index constant layer is constant; the refractive index of the medium refractive index decreasing layer gradually decreases in a direction away from the medium refractive index constant layer; and
  • the second interlayer insulating layer forming step includes depositing a second interlayer insulating layer onto the first interlayer insulating layer;
  • the second interlayer insulating layer includes an upper refractive index decreasing layer and an upper refractive index constant layer; the refractive index of the upper refractive index decreasing layer decreases along the direction away from the first interlayer insulating layer ;
  • the upper refractive index constant layer is formed on the upper refractive index decreasing layer, and the refractive index of the upper refractive index constant layer is constant;
  • the silicon oxide of the graded-refractive-index layer is formed by reacting tetraethoxysilane and oxygen as reactants through a chemical reaction by plasma-enhanced chemical vapor deposition method;
  • the ratio of tetraethoxysilane/oxygen and the power of generating plasma in the plasma enhanced chemical vapor deposition method make the film quality of silicon oxide gradually become denser and looser, so that the refractive index formed in the lower refractive index decreasing layer is formed by High to low gradient area;
  • the gate insulating layer is made of silicon oxide; the first interlayer insulating layer is made of silicon nitride; and the second interlayer insulating layer is made of silicon oxide.
  • the silicon nitride of the first interlayer insulating layer is formed by reacting ammonia/silicon methane as a reactant through a plasma-enhanced chemical vapor deposition method; the intermediate refractive index increases The layer is formed by continuously changing the ratio of ammonia/silicon methane and the power of the plasma generated in the plasma enhanced chemical vapor deposition method to make the film quality of silicon nitride gradually loose and dense, so that the middle refractive index increasing layer is formed Gradient region with low to high refractive index; the medium refractive index decreasing layer is to change the density of silicon nitride film by continuously changing the ratio of ammonia/silicomethane and the power of plasma generation in plasma enhanced chemical vapor deposition It is gradually loosened and formed so that a gradient region with a refractive index from high to low is formed in the medium refractive index decreasing layer.
  • the upper refractive index decreasing layer of the second interlayer insulating layer is generated by continuously changing the ratio of tetraethoxysilane/oxygen and plasma enhanced chemical vapor deposition
  • the power causes the film quality of silicon oxide to gradually become loose and dense, so that a gradient region with a refractive index from high to low is formed in the upper refractive index decreasing layer.
  • the manufacturing method further includes: a flat layer forming step including forming a flat layer on the second interlayer insulating layer; a transparent electrode layer forming step including forming a transparent electrode layer on the flat On the layer; and a passivation layer forming step, including forming a passivation layer on the transparent electrode layer
  • the transparent electrode layer is made of indium tin oxide; the passivation layer is made of silicon nitride.
  • the present invention uses the lower refractive index decreasing layer and the lower refractive index constant layer of the graded refractive index layer, the middle refractive index increasing layer of the first interlayer insulating layer, and The middle refractive index decreasing layer and the upper refractive index decreasing layer of the second interlayer insulating layer enable the refractive indexes between the plurality of film layers to be connected to each other in a gradually increasing or decreasing manner, so the present invention can To avoid the problem that the reflectivity of the interface between adjacent film layers is too large to reduce the transmittance, thereby improving the brightness of the display panel and reducing its power consumption.
  • FIG. 1 is a schematic cross-sectional view illustrating the relationship between the refractive index and the change in transmittance between the silicon oxide (SiOx) layer and the silicon nitride (SiNx) layer according to the present invention.
  • FIG. 2 is another schematic cross-sectional diagram illustrating the relationship between the refractive index and the change in transmittance between the silicon oxide (SiOx) layer and the silicon nitride (SiNx) layer according to the present invention.
  • FIG 3 is a schematic side cross-sectional view of a high-penetration liquid crystal display panel of the present invention.
  • FIG. 4 is a schematic flowchart of the steps of the method for manufacturing a high-penetration liquid crystal display panel of the present invention.
  • the present invention changes the refractive index by changing the density of the thin film at the interface to form an interface with a refractive index gradient , Thereby reducing the interface reflectance.
  • FIG. 1 is a schematic cross-sectional view illustrating the relationship between the refractive index and the change in transmittance between the silicon oxide (SiOx) layer 91 and the silicon nitride (SiNx) layer 92 according to the present invention.
  • the interface reflectance of the silicon oxide (SiOx) layer 91 and the silicon nitride (SiNx) layer 92 can be obtained as 1.7%.
  • the total transmittance of the silicon oxide (SiOx) layer 91 and the silicon nitride (SiNx) layer 92 is 98.3%.
  • FIG. 2 is another schematic cross-sectional view illustrating the relationship between the refractive index and the change in transmittance between the silicon oxide (SiOx) layer and the silicon nitride (SiNx) layer according to the present invention.
  • the SiNx layer 92 and the second silicon nitride (SiNx) layer 93 are sequentially stacked on the silicon nitride (SiNx) layer 92, and the refractive index of the silicon nitride (SiNx) layer 92 is 1.85.
  • the first and second interface reflectances are 1.31% and 0.07%, respectively, and the sum of the two is 1.38%, which is 0.32% lower than the single interface.
  • the total transmittance of the above-mentioned silicon oxide (SiOx) layer, silicon nitride (SiNx) layer 92 and second silicon nitride (SiNx) layer 93 is 98.62%, which is improved compared to the structure of FIG. 1.
  • the present invention can provide a multilayer refractive index gradient interface at the interface to further reduce the reflectivity.
  • the penetration of the multilayer film can be further improved.
  • FIG. 3 is a schematic side sectional view of the high-penetration liquid crystal display panel of the present invention.
  • FIG. 4 is a schematic flowchart of the steps of the method for manufacturing the high-penetration liquid crystal display panel of the present invention.
  • the present invention proposes a method for manufacturing a high-penetration liquid crystal display panel based on the principle of the relationship between the refractive index and the change in transmittance.
  • the step S01 of forming a refractive index gradient layer includes depositing a silicon nitride (SiNx) layer 20 onto the glass substrate 10, and the thickness of the silicon nitride (SiNx) layer 20 may be 50 nm.
  • a graded index layer 30 is deposited on the silicon nitride (SiNx) layer 20.
  • the graded refractive index layer 30 is made of silicon oxide (SiOx), and the graded refractive index layer 30 includes a lower refractive index decreasing layer 31 and a lower constant refractive index layer 32.
  • the refractive index of the lower refractive index decreasing layer 31 gradually decreases along the direction away from the silicon nitride (SiNx) layer 20.
  • the lower refractive index constant layer 32 is deposited on the lower refractive index decreasing layer 31.
  • the graded refractive index layer 30 is formed by plasma enhanced chemical vapor deposition (Plasma-enhanced Chemical Vapor Deposition (PECVD) method.
  • the silicon oxide (SiOx) of the graded index layer 30 is composed of tetraethoxysilane (Si(OC2H5) 4, Tetraethoxysilane (TEOS) and oxygen (O2) are used as reactants to generate chemical reactions by PECVD.
  • the reaction equation for generating silicon oxide (SiOx) is TEOS + O2 ⁇ SiOx.
  • the lower refractive index decreasing layer 31 is formed by continuously changing the ratio of the reaction TEOS/O2 and the power of the plasma generated in the PECVD method to make the film quality of silicon oxide (SiOx) gradually become denser and looser, so that the lower In the refractive index decreasing layer 31, a gradient region having a refractive index from high to low is formed.
  • the thickness of the lower refractive index decreasing layer 31 is 50 nm. Then deposit a layer of silicon oxide (SiOx) with normal parameters and a thickness of 225 nm.
  • the gate insulating layer forming step S02 includes depositing a gate insulating layer 40 on the graded index layer 30. Since the difference in refractive index between the gate insulating layer 40 and the graded refractive index layer 30 is small, the thickness of the gate insulating layer 40 only needs to be 120 nm, so that the gate insulating layer 40 and the The sum of the thicknesses of the graded refractive index layers 30 satisfies the condition of destructive interference.
  • the gate insulating layer 40 is made of silicon oxide (SiOx), that is, the gate insulating layer 40 is a silicon oxide (SiOx) layer.
  • the first interlayer insulating layer forming step S03 includes depositing a first interlayer insulating layer 50 onto the gate insulating layer 40, and the first interlayer insulating layer 50 includes a medium refractive index increasing layer 51, a medium refractive The constant rate layer 52 and the medium refractive index decreasing layer 53.
  • the refractive index of the middle refractive index increasing layer 51 gradually increases in a direction away from the gate insulating layer 40.
  • the middle refractive index constant layer 52 is formed on the middle refractive index increasing layer 51, and the refractive index of the middle refractive index constant layer 52 is constant.
  • the refractive index of the middle refractive index decreasing layer 53 gradually decreases in a direction away from the middle refractive index constant layer.
  • the first interlayer insulating layer 50 is made of silicon nitride (SiNx).
  • the first interlayer insulating layer 50 is deposited by PECVD.
  • the silicon nitride (SiNx) of the first interlayer insulating layer 50 is produced by reacting ammonia (NH3)/silyl methane (SiH4) as a reactant by a chemical reaction by the PECVD method.
  • the reaction equation for forming silicon nitride (SiNx) is SiH4 + NH3 + N2 ⁇ SiNx. The greater the proportion of SiH4, the greater the refractive index of the film formation.
  • the intermediate refractive index increasing layer 51 changes the ratio of ammonia (NH3)/silicon methane (SiH4), power and other parameters to gradually change the film quality of silicon nitride (SiNx) from loose It is formed densely so that a gradient region with a low to high refractive index is formed in the middle refractive index increasing layer 51.
  • the thickness of the middle refractive index increasing layer 51 is 50 nm.
  • the medium refractive index constant layer 52 is formed by depositing silicon nitride (SiNx) with normal parameters, and the thickness of the medium refractive index constant layer 52 is 180 nm.
  • the medium refractive index decreasing layer 53 continuously changes the ratio of ammonia (NH3)/silicon methane (SiH4) and the power of the plasma generated in the PECVD method to make the film quality of silicon nitride (SiNx) gradually from dense It is formed loosely, so that a gradient region with a refractive index from high to low is formed in the middle refractive index decreasing layer 53.
  • the thickness of the medium refractive index decreasing layer 53 is 50 nm.
  • the total thickness of silicon nitride (SiNx) in the first interlayer insulating layer forming step S03 is 280 nm, which satisfies the condition of destructive interference.
  • the second interlayer insulating layer forming step S04 includes depositing a second interlayer insulating layer 60 onto the first interlayer insulating layer 50, the second interlayer insulating layer 60 includes an upper refractive index decreasing layer 61, and The upper refractive index constant layer 62, the refractive index of the upper refractive index decreasing layer 61 decreases along the direction away from the first interlayer insulating layer 50, the upper refractive index constant layer 62 is formed on the upper refractive On the rate decreasing layer 61, and the upper refractive index constant layer 62 has a constant refractive index.
  • the second interlayer insulating layer 60 is made of silicon oxide (SiOx).
  • the upper refractive index decreasing layer 61 of the second interlayer insulating layer 60 is oxidized by continuously changing the parameters such as the TEOS/O2 ratio and the power of the plasma generated in the PECVD method.
  • the film quality of silicon (SiOx) is formed by gradually becoming denser and denser, so that a gradient region with a refractive index from high to low is formed in the upper refractive index decreasing layer 61.
  • the thickness of the upper decreasing refractive index layer 61 is 50 nm.
  • the upper constant refractive index layer 62 is a silicon oxide (SiOx) layer deposited with normal parameters, and the upper constant refractive index layer 62 has a thickness of 250 nm.
  • the flat layer forming step S05 includes forming a flat layer 70 on the second interlayer insulating layer 60.
  • the thickness of the flat layer 70 is 2500 nm.
  • the transparent electrode layer forming step S06 includes forming a transparent electrode layer 71 on the flat layer 70.
  • the transparent electrode layer 71 can be made of Indium Tin Oxide (ITO).
  • the thickness of the transparent electrode layer 71 is 40 nm.
  • the passivation layer forming step S07 includes forming a passivation layer 72 on the transparent electrode layer 71.
  • the passivation layer 72 can be made of silicon nitride (SiNx).
  • the thickness of the passivation layer 72 is 80 nm.
  • the thicknesses of the flat layer 70, the transparent electrode layer 71, and the passivation layer 72 satisfy the conditions of destructive interference.
  • the present invention also provides a high-penetration liquid crystal display panel manufactured by the high-penetration liquid crystal display panel manufacturing method, including a glass substrate 10, a silicon nitride (SiNx) layer 20, The graded refractive index layer 30, the gate insulating layer 40, the first interlayer insulating layer 50, the second interlayer insulating layer 60, the flat layer 70, the transparent electrode layer 71, and the passivation layer 72.
  • a high-penetration liquid crystal display panel manufactured by the high-penetration liquid crystal display panel manufacturing method including a glass substrate 10, a silicon nitride (SiNx) layer 20, The graded refractive index layer 30, the gate insulating layer 40, the first interlayer insulating layer 50, the second interlayer insulating layer 60, the flat layer 70, the transparent electrode layer 71, and the passivation layer 72.
  • SiNx silicon nitride
  • the refractive index n of the glass substrate 10 is 1.51.
  • the silicon nitride (SiNx) layer 20 is formed on the glass substrate 10.
  • the refractive index n of the silicon nitride (SiNx) layer 20 is 1.87.
  • the graded refractive index layer 30 is formed on the silicon nitride (SiNx) layer 20 and includes a lower refractive index decreasing layer 31 and a lower refractive index constant layer 32.
  • the lower refractive index decreasing layer 31 is formed on the silicon nitride (SiNx) layer 20, and the refractive index of the lower refractive index decreasing layer 31 is along the distance away from the silicon nitride (SiNx) layer 20 The direction gradually decreases.
  • the lower refractive index constant layer 32 is formed on the lower refractive index decreasing layer 31.
  • the lower refractive index constant layer 32 has a refractive index n of 1.49.
  • the gate insulating layer 40 is formed on the graded index layer 30.
  • the gate insulating layer 40 is made of silicon oxide (SiOx).
  • the refractive index n of the gate insulating layer 40 is 1.45.
  • the first interlayer insulating layer 50 is formed on the gate insulating layer 40.
  • the first interlayer insulating layer 50 includes a medium refractive index increasing layer 51, a medium refractive index constant layer 52, and a medium refractive index decreasing layer 53.
  • the refractive index of the middle refractive index increasing layer 51 gradually increases in a direction away from the gate insulating layer 40.
  • the middle refractive index constant layer 52 is formed on the middle refractive index increasing layer 51, and the refractive index of the middle refractive index constant layer 52 is constant, and the refractive index n is 1.92.
  • the refractive index of the middle refractive index decreasing layer 53 gradually decreases in a direction away from the middle refractive index constant layer.
  • the first interlayer insulating layer 50 is made of silicon nitride (SiNx).
  • the second interlayer insulating layer 60 is formed on the first interlayer insulating layer 50.
  • the second interlayer insulating layer 60 includes an upper refractive index decreasing layer 61 and an upper refractive index constant layer 62.
  • the refractive index of the upper refractive index decreasing layer 61 is along the distance away from the first interlayer insulating layer 50 As the direction decreases, the upper constant refractive index layer 62 is formed on the upper refractive index decreasing layer 61, and the upper refractive index constant layer 62 has a constant refractive index and a refractive index n of 1.47.
  • the flat layer 70 is formed on the second interlayer insulating layer 60.
  • the refractive index n of the flat layer 70 is 1.55.
  • the transparent electrode layer 71 is formed on the flat layer 70.
  • the refractive index n of the transparent electrode layer 71 is 1.98.
  • the passivation layer 72 is formed on the transparent electrode layer 71.
  • the refractive index n of the passivation layer 72 is 1.85.
  • the present invention uses the lower refractive index decreasing layer 31 of the refractive index graded layer 30, the lower refractive index constant layer 32, and the middle refraction of the first interlayer insulating layer 50
  • the rate increasing layer 51 and the middle refractive index decreasing layer 53 and the upper refractive index decreasing layer 61 of the second interlayer insulating layer 60 enable the refractive index between the plurality of film layers to be gradually increased or decreased
  • the methods are connected to each other, so the present invention can avoid the problem that the reflectivity of the interface between adjacent film layers is too large to reduce the transmittance, thereby improving the brightness of the display panel and reducing its power consumption.

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Abstract

一种高穿透性液晶显示面板制造方法，包括：折射率渐变层(30)形成步骤(S01)、栅极绝缘层(40)形成步骤(S02)、第一层间绝缘层(50)形成步骤(S03)以及第二层间绝缘层(60)形成步骤(S04)。折射率渐变层(30)形成步骤包括沉积氮化硅层(20)到玻璃基板(10)上，接着沉积折射率渐变层(30)到氮化硅层(20)上，其中折射率渐变层(30)以氧化硅制造，且折射率渐变层(30)包括下折射率递减层(31)以及下折射率恒定层(32)，下折射率递减层(31)的折射率是沿着远离氮化硅层(20)的方向而逐渐递减，下折射率恒定层(32)是沉积在下折射率递减层(31)上。可降低光在多膜层间的反射率，从而提升显示面板的透光性。

Description

高穿透性液晶显示面板制造方法及其显示面板 技术领域
本发明是有关于一种显示面板制造方法，尤指一种高穿透性液晶显示面板制造方法以及高穿透性液晶显示面板，其可降低光在多膜层间的反射率，从而提升所述高穿透性液晶显示面板的透光性。
 背景技术
近年来，在薄膜晶体管液晶显示器(Thin Film Transistor Liquid Display, TFT-LCD)逐渐往节电化、高清晰化及提高色再现性等项目进行开发。其中提高穿透性能以提升TFT-LCD的亮度并减少电力损耗，是各家面板厂都在想办法攻克的难关。TFT-LCD面板的穿透性是指背光源透过TFT-LCD面板前后的光强之比例。通常情况下TFT-LCD的透光率只有3-10%，也就是说超过90%的光是无法得到利用的。对于TFT来说，除了金属走线外，对穿透率影响较大的还有由氧化硅(SiOx)、氮化硅(SiNx)、氧化铟锡(Indium Tin Oxide, ITO)，平坦层等材料构成的多层膜结构。每层膜的折射率和厚度都会对多层膜的整体穿透率产生影响。因此，可以通过调节每层膜的膜质、厚度、膜层结构等参数来提高多层膜的穿透率。
已知光穿过多层膜的界面时，会在界面处产生反射和折射。每个界面间的反射率计算式为：R=(n 2-n 1) 2/(n 2+n 1) 2，其中R、n 1、n 2分别为反射率以及界面两侧薄膜的折射率。由上式可知界面处两层膜的折射率之差越小，反射率越低，穿透性越高。通常情况下由于氧化硅(SiOx)层的折射率（1.45）与氮化硅(SiNx)层的折射率（1.92）差值较大，故在界面处反射率较高，会造成穿透性下降。
故，有必要提供一种高穿透性液晶显示面板制造方法以及高穿透性液晶显示面板，以解决现有技术所存在的问题。
 技术问题
有鉴现有技术的液晶显示器的穿透率不足的缺点，本发明提供一种高穿透性液晶显示面板制造方法以及高穿透性液晶显示面板。
 技术解决方案
本发明的主要目的在于提供一种高穿透性液晶显示面板制造方法，包括：
折射率渐变层形成步骤，包括沉积氮化硅层到玻璃基板上，接着沉积折射率渐变层到所述氮化硅层上，其中所述折射率渐变层以氧化硅制造，且所述折射率渐变层包括下折射率递减层以及下折射率恒定层，所述下折射率递减层的折射率是沿着远离所述氮化硅层的方向而逐渐递减，所述下折射率恒定层是沉积在所述下折射率递减层上；
栅极绝缘层形成步骤，包括沉积栅极绝缘层到所述折射率渐变层上；
第一层间绝缘层形成步骤，包括沉积第一层间绝缘层到所述栅极绝缘层上，其中所述第一层间绝缘层包括中折射率递增层、中折射率恒定层以及中折射率递减层；所述中折射率递增层的折射率是沿着远离所述栅极绝缘层的方向而逐渐递增；所述中折射率恒定层形成在所述中折射率递增层上，且所述中折射率恒定层的折射率为恒定；所述中折射率递减层的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减；以及
第二层间绝缘层形成步骤，包括沉积第二层间绝缘层到所述第一层间绝缘层上。
在本发明一实施例中，所述第二层间绝缘层包括上折射率递减层、以及上折射率恒定层；所述上折射率递减层的折射率是沿着远离所述第一层间绝缘层的方向而递减；所述上折射率恒定层形成在所述上折射率递减层上，且所述上折射率恒定层的折射率为恒定。
在本发明一实施例中，所述折射率渐变层的氧化硅是由四乙氧基硅烷以及氧气作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述下折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述下折射率递减层中形成折射率由高到低的梯度区域。
在本发明一实施例中，所述栅极绝缘层以氧化硅制造；所述第一层间绝缘层以氮化硅制造；所述第二层间绝缘层以氧化硅制造。
在本发明一实施例中，所述第一层间绝缘层的氮化硅是由氨/硅甲烷作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述中折射率递增层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由疏松逐渐变致密而形成，使得所述中折射率递增层中形成折射率由低到高的梯度区域；所述中折射率递减层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由致密逐渐变疏松而形成，使得所述中折射率递减层中形成折射率由高到低的梯度区域。
在本发明一实施例中，所述第二层间绝缘层的所述上折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述上折射率递减层中形成折射率由高到低的梯度区域。
在本发明一实施例中，所述制造方法进一步包括：平坦层形成步骤，包括形成平坦层在所述第二层间绝缘层上；透明电极层形成步骤，包括形成透明电极层在所述平坦层上；以及钝化层形成步骤，包括形成钝化层在所述透明电极层上。
在本发明一实施例中，所述透明电极层以氧化铟锡制造；所述钝化层以氮化硅制造。
本发明的另一目的在于提供一种高穿透性液晶显示面板，包括：
玻璃基板；
氮化硅层，形成在所述玻璃基板上；
折射率渐变层，形成在所述氮化硅层上，且包括下折射率递减层以及下折射率恒定层；所述下折射率递减层是形成在所述氮化硅层上，且所述下折射率递减层的折射率是沿着远离所述氮化硅层的方向而逐渐递减；所述下折射率恒定层是形成在所述下折射率递减层上；
栅极绝缘层，形成在所述折射率渐变层上；
第一层间绝缘层，形成在所述栅极绝缘层，且包括中折射率递增层、中折射率恒定层以及中折射率递减层；所述中折射率递增层的折射率是沿着远离所述栅极绝缘层的方向而逐渐递增；所述中折射率恒定层形成在所述中折射率递增层上，且所述中折射率恒定层的折射率为恒定；所述中折射率递减层的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减；以及
第二层间绝缘层，形成在所述第一层间绝缘层，且包括上折射率递减层、以及上折射率恒定层；所述上折射率递减层的折射率是沿着远离所述第一层间绝缘层的方向而递减；所述上折射率恒定层形成在所述上折射率递减层上，且所述上折射率恒定层的折射率为恒定。
在本发明一实施例中，所述栅极绝缘层为氧化硅层。
本发明的另一目的在于提供一种高穿透性液晶显示面板制造方法，包括：
折射率渐变层形成步骤，包括沉积氮化硅层到玻璃基板上，接着沉积折射率渐变层到所述氮化硅层上，其中所述折射率渐变层以氧化硅制造，且所述折射率渐变层包括下折射率递减层以及下折射率恒定层，所述下折射率递减层的折射率是沿着远离所述氮化硅层的方向而逐渐递减，所述下折射率恒定层是沉积在所述下折射率递减层上；
栅极绝缘层形成步骤，包括沉积栅极绝缘层到所述折射率渐变层上；
第一层间绝缘层形成步骤，包括沉积第一层间绝缘层到所述栅极绝缘层上，其中所述第一层间绝缘层包括中折射率递增层、中折射率恒定层以及中折射率递减层；所述中折射率递增层的折射率是沿着远离所述栅极绝缘层的方向而逐渐递增；所述中折射率恒定层形成在所述中折射率递增层上，且所述中折射率恒定层的折射率为恒定；所述中折射率递减层的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减；以及
第二层间绝缘层形成步骤，包括沉积第二层间绝缘层到所述第一层间绝缘层上；
其中，所述第二层间绝缘层包括上折射率递减层、以及上折射率恒定层；所述上折射率递减层的折射率是沿着远离所述第一层间绝缘层的方向而递减；所述上折射率恒定层形成在所述上折射率递减层上，且所述上折射率恒定层的折射率为恒定；
其中，所述折射率渐变层的氧化硅是由四乙氧基硅烷以及氧气作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述下折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述下折射率递减层中形成折射率由高到低的梯度区域；
其中，所述栅极绝缘层以氧化硅制造；所述第一层间绝缘层以氮化硅制造；所述第二层间绝缘层以氧化硅制造。
在本发明一实施例中，所述第一层间绝缘层的氮化硅是由氨/硅甲烷作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述中折射率递增层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由疏松逐渐变致密而形成，使得所述中折射率递增层中形成折射率由低到高的梯度区域；所述中折射率递减层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由致密逐渐变疏松而形成，使得所述中折射率递减层中形成折射率由高到低的梯度区域。
在本发明一实施例中，所述第二层间绝缘层的所述上折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述上折射率递减层中形成折射率由高到低的梯度区域。
在本发明一实施例中，所述制造方法进一步包括：平坦层形成步骤，包括形成平坦层在所述第二层间绝缘层上；透明电极层形成步骤，包括形成透明电极层在所述平坦层上；以及钝化层形成步骤，包括形成钝化层在所述透明电极层上。
在本发明一实施例中，所述透明电极层以氧化铟锡制造；所述钝化层以氮化硅制造。
 有益效果
相较于现有技术，本发明通过所述折射率渐变层的所述下折射率递减层以及所述下折射率恒定层、所述第一层间绝缘层的所述中折射率递增层以及所述中折射率递减层、以及所述第二层间绝缘层的所述上折射率递减层，使得多个膜层间的折射率能够以逐渐递增或递减的方式相互衔接，故本发明可避免相邻膜层间界面的反射率过大而降低穿透率的问题，进而提升显示面板的亮度且降低其耗电。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，且配合所附图式，作详细说明如下：
 附图说明
图1是本发明所依据的氧化硅(SiOx)层与氮化硅(SiNx)层之间的折射率与穿透率变化关系说明剖面示意图。
图2是本发明所依据的氧化硅(SiOx)层与氮化硅(SiNx)层之间的折射率与穿透率变化关系的另一说明剖面示意图。
图3是本发明高穿透性液晶显示面板的侧面剖视示意图。
图4是本发明高穿透性液晶显示面板制造方法的步骤流程示意图。
 本发明的实施方式
为了改善此现有技术的液晶显示器中的多膜层间反射率大而导致穿透率低的问题，本发明藉由改变界面处薄膜的致密程度来改变折射率，形成具有折射率梯度的界面，从而减小界面反射率。
请参照图1，图1是本发明所依据的氧化硅(SiOx)层91与氮化硅(SiNx)层92之间的折射率与穿透率变化关系说明剖面示意图。透过计算，可得氧化硅(SiOx)层91与氮化硅(SiNx)层92的界面反射率为1.7%。上述氧化硅(SiOx)层91与氮化硅(SiNx)层92的总穿透率为98.3%。
请参照图2，图2是本发明所依据的氧化硅(SiOx)层与氮化硅(SiNx)层之间的折射率与穿透率变化关系的另一说明剖面示意图，其中氮化硅(SiNx)层92与第二氮化硅(SiNx)层93依序迭设在氮化硅(SiNx)层92上，氮化硅(SiNx)层92的折射率为为1.85。上述结构形成了氧化硅(SiOx)层与氮化硅(SiNx)层92（折射率n=1.85）之间的第一界面、以及氮化硅(SiNx)层92（折射率n=1.85）与第二氮化硅(SiNx)层93（折射率n=1.92）之间的第二界面。透过计算得出第一与第二界面反射率分别为1.31%以及0.07%，且两者之和为1.38%，比单界面降低了0.32%。上述氧化硅(SiOx)层、氮化硅(SiNx)层92与第二氮化硅(SiNx)层93的总穿透率为98.62%，相较于图1结构的穿透率有所提升。
由上述可知，本发明可在界面处设置多层折射率梯度界面，进一步降低反射率。此外，在多层膜结构中，当某层薄膜的厚度满足关系nd=mλ/4（m为整数）时，薄膜上下界面的反射光会发生相消干涉或增强干涉，因此通过调控每层薄膜的厚度为特定值时可以进一步提高多层膜的穿透性。
请参照图3及图4，图3是本发明高穿透性液晶显示面板的侧面剖视示意图，图4是本发明高穿透性液晶显示面板制造方法的步骤流程示意图。本发明基于上述折射率与穿透率变化关系原理，提出一种高穿透性液晶显示面板制造方法，所述高穿透性液晶显示面板制造方法包括：折射率渐变层形成步骤S01、栅极绝缘层形成步骤S02、第一层间绝缘层形成步骤S03、第二层间绝缘层形成步骤S04、平坦层形成步骤S05、透明电极层形成步骤S06、以及钝化层形成步骤S07。
所述折射率渐变层形成步骤S01包括沉积氮化硅(SiNx)层20到玻璃基板10上，所述氮化硅(SiNx)层20的厚度可为50 nm。接着沉积折射率渐变层30到所述氮化硅(SiNx)层20上。所述折射率渐变层30以氧化硅(SiOx)制造，且所述折射率渐变层30包括下折射率递减层31以及下折射率恒定层32。所述下折射率递减层31的折射率是沿着远离所述氮化硅(SiNx)层20的方向而逐渐递减。所述下折射率恒定层32是沉积在所述下折射率递减层31上。
于本发明较佳实施例中，所述折射率渐变层30是通过等离子体增强化学气相沉积(Plasma-enhanced Chemical Vapor Deposition, PECVD)法而沉积。详细而言，所述折射率渐变层30的氧化硅(SiOx)是由四乙氧基硅烷(Si(OC2H5)4, Tetraethoxysilane, TEOS)以及氧气(O2)作为反应物，通过PECVD法进行化学反应而生成。生成氧化硅(SiOx)的反应方程为TEOS + O2 → SiOx。通过调整TEOS/O2的比例，TEOS比例越大，折射率越高。所述下折射率递减层31是通过不断改反应TEOS/O2比例、以及PECVD法中生成等离子体之功率等参数使氧化硅(SiOx)的膜质由致密逐渐变疏松而形成，使得所述下折射率递减层31中形成折射率由高到低的梯度区域。所述下折射率递减层31的的厚度为50 nm。然后以正常参数沉积氧化硅(SiOx)层，厚度为225 nm。
所述栅极绝缘层形成步骤S02包括沉积栅极绝缘层40到所述折射率渐变层30上。由于所述栅极绝缘层40与所述折射率渐变层30的折射率差异较小，故所述栅极绝缘层40的厚度仅需为120 nm，即可使所述栅极绝缘层40与所述折射率渐变层30的厚度之和满足相消干涉的条件。于本发明较佳实施例中，所述栅极绝缘层40以氧化硅(SiOx)制造，即栅极绝缘层40为氧化硅(SiOx)层。
所述第一层间绝缘层形成步骤S03包括沉积第一层间绝缘层50到所述栅极绝缘层40上，且所述第一层间绝缘层50包括中折射率递增层51、中折射率恒定层52以及中折射率递减层53。所述中折射率递增层51的折射率是沿着远离所述栅极绝缘层40的方向而逐渐递增。所述中折射率恒定层52形成在所述中折射率递增层51上，且所述中折射率恒定层52的折射率为恒定。所述中折射率递减层53的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减。
于本发明较佳实施例中，所述第一层间绝缘层50以氮化硅(SiNx)制造。
于本发明较佳实施例中，所述第一层间绝缘层50是通过PECVD法而沉积。详细而言，所述第一层间绝缘层50的氮化硅(SiNx)是由氨(NH3)/硅甲烷(SiH4)作为反应物，通过PECVD法进行化学反应而生成。生成氮化硅(SiNx)的反应方程为SiH4 + NH3 + N2 →SiNx，SiH4比例越大，成膜的折射率越大。
于本发明较佳实施例中，所述中折射率递增层51是通过不断改变氨(NH3)/硅甲烷(SiH4)比例，功率等参数使氮化硅(SiNx)的膜质由疏松逐渐变致密而形成，使得所述中折射率递增层51中形成折射率由低到高的梯度区域。所述中折射率递增层51的厚度为50 nm。接着，所述中折射率恒定层52是以正常参数沉积氮化硅(SiNx)而形成，且所述中折射率恒定层52的厚度为180 nm。最后，所述中折射率递减层53是通过不断改变氨(NH3)/硅甲烷(SiH4)比例、以及PECVD法中生成等离子体之功率等参数使氮化硅(SiNx)的膜质由致密逐渐变疏松而形成，使得所述中折射率递减层53中形成折射率由高到低的梯度区域。所述中折射率递减层53的厚度为50 nm。所述第一层间绝缘层形成步骤S03的氮化硅(SiNx)的总厚度为280 nm，满足相消干涉的条件。
所述第二层间绝缘层形成步骤S04包括沉积第二层间绝缘层60到所述第一层间绝缘层50上，所述第二层间绝缘层60包括上折射率递减层61、以及上折射率恒定层62，所述上折射率递减层61的折射率是沿着远离所述第一层间绝缘层50的方向而递减，所述上折射率恒定层62形成在所述上折射率递减层61上，且所述上折射率恒定层62的折射率为恒定。
于本发明较佳实施例中，所述第二层间绝缘层60以氧化硅(SiOx)制造。
于本发明较佳实施例中，所述第二层间绝缘层60的所述上折射率递减层61是通过不断改反应TEOS/O2比例、以及PECVD法中生成等离子体之功率等参数使氧化硅(SiOx)的膜质由致密逐渐变疏松而形成，使得所述上折射率递减层61中形成折射率由高到低的梯度区域。所述上折射率递减层61的厚度为50 nm。所述上折射率恒定层62是以正常参数沉积氧化硅(SiOx)层，且所述上折射率恒定层62厚度为250 nm。
所述平坦层形成步骤S05包括形成平坦层70在所述第二层间绝缘层60上。于本发明较佳实施例中，所述平坦层70的厚度为2500 nm。
所述透明电极层形成步骤S06包括形成透明电极层71在所述平坦层70上。于本发明较佳实施例中，所述透明电极层71可以氧化铟锡(Indium Tin Oxide, ITO)制造。于本发明较佳实施例中，所述透明电极层71的厚度为40 nm。
所述钝化层形成步骤S07包括形成钝化层72在所述透明电极层71上。于本发明较佳实施例中，所述钝化层72可以氮化硅(SiNx)制造。于本发明较佳实施例中，所述钝化层72的厚度为80 nm。
上述所述平坦层70、所述透明电极层71以及所述钝化层72的厚度满足相消干涉的条件。
请复参照图3，本发明亦提出一种高穿透性液晶显示面板，其由所述高穿透性液晶显示面板制造方法所制造，包括玻璃基板10、氮化硅(SiNx)层20、折射率渐变层30、栅极绝缘层40、第一层间绝缘层50、第二层间绝缘层60、平坦层70、透明电极层71、以及钝化层72。
所述玻璃基板10折射率n为1.51。
所述氮化硅(SiNx)层20形成在所述玻璃基板10上。所述氮化硅(SiNx)层20折射率n为1.87。
所述折射率渐变层30形成在所述氮化硅(SiNx)层20上，且包括下折射率递减层31以及下折射率恒定层32。所述下折射率递减层31是形成在所述氮化硅(SiNx)层20上，且所述下折射率递减层31的折射率是沿着远离所述氮化硅(SiNx)层20的方向而逐渐递减。所述下折射率恒定层32是形成在所述下折射率递减层31上。此外，所述下折射率恒定层32折射率n为1.49。
所述栅极绝缘层40形成在所述折射率渐变层30上。于本发明较佳实施例中，所述栅极绝缘层40以氧化硅(SiOx)制造。所述栅极绝缘层40折射率n为1.45。
所述第一层间绝缘层50形成在所述栅极绝缘层40上。所述第一层间绝缘层50包括中折射率递增层51、中折射率恒定层52以及中折射率递减层53。所述中折射率递增层51的折射率是沿着远离所述栅极绝缘层40的方向而逐渐递增。所述中折射率恒定层52形成在所述中折射率递增层51上，且所述中折射率恒定层52的折射率为恒定，所述折射率n为1.92。所述中折射率递减层53的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减。于本发明较佳实施例中，所述第一层间绝缘层50以氮化硅(SiNx)制造。
所述第二层间绝缘层60形成在所述第一层间绝缘层50上。所述第二层间绝缘层60包括上折射率递减层61、以及上折射率恒定层62，所述上折射率递减层61的折射率是沿着远离所述第一层间绝缘层50的方向而递减，所述上折射率恒定层62形成在所述上折射率递减层61上，且所述上折射率恒定层62的折射率为恒定，折射率n为1.47。
所述平坦层70形成在所述第二层间绝缘层60上。所述平坦层70折射率n为1.55。
所述透明电极层71形成在所述平坦层70上。所述透明电极层71折射率n为1.98。
所述钝化层72形成在所述透明电极层71上。所述钝化层72折射率n为1.85。
相较于现有技术，本发明通过所述折射率渐变层30的所述下折射率递减层31以及所述下折射率恒定层32、所述第一层间绝缘层50的所述中折射率递增层51以及所述中折射率递减层53、以及所述第二层间绝缘层60的所述上折射率递减层61，使得多个膜层间的折射率能够以逐渐递增或递减的方式相互衔接，故本发明可避免相邻膜层间界面的反射率过大而降低穿透率的问题，进而提升显示面板的亮度且降低其耗电。

Claims (15)

  1. 一种高穿透性液晶显示面板制造方法，包括：
    折射率渐变层形成步骤，包括沉积氮化硅层到玻璃基板上，接着沉积折射率渐变层到所述氮化硅层上，其中所述折射率渐变层以氧化硅制造，且所述折射率渐变层包括下折射率递减层以及下折射率恒定层，所述下折射率递减层的折射率是沿着远离所述氮化硅层的方向而逐渐递减，所述下折射率恒定层是沉积在所述下折射率递减层上；
    栅极绝缘层形成步骤，包括沉积栅极绝缘层到所述折射率渐变层上；
    第一层间绝缘层形成步骤，包括沉积第一层间绝缘层到所述栅极绝缘层上，其中所述第一层间绝缘层包括中折射率递增层、中折射率恒定层以及中折射率递减层；所述中折射率递增层的折射率是沿着远离所述栅极绝缘层的方向而逐渐递增；所述中折射率恒定层形成在所述中折射率递增层上，且所述中折射率恒定层的折射率为恒定；所述中折射率递减层的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减；以及
    第二层间绝缘层形成步骤，包括沉积第二层间绝缘层到所述第一层间绝缘层上。
  2. 如权利要求1所述的高穿透性液晶显示面板制造方法，其中，所述第二层间绝缘层包括上折射率递减层、以及上折射率恒定层；所述上折射率递减层的折射率是沿着远离所述第一层间绝缘层的方向而递减；所述上折射率恒定层形成在所述上折射率递减层上，且所述上折射率恒定层的折射率为恒定。
  3. 如权利要求1所述的高穿透性液晶显示面板制造方法，其中，所述折射率渐变层的氧化硅是由四乙氧基硅烷以及氧气作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述下折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述下折射率递减层中形成折射率由高到低的梯度区域。
  4. 如权利要求1所述的高穿透性液晶显示面板制造方法，其中，所述栅极绝缘层以氧化硅制造；所述第一层间绝缘层以氮化硅制造；所述第二层间绝缘层以氧化硅制造。
  5. 如权利要求4所述的高穿透性液晶显示面板制造方法，其中，所述第一层间绝缘层的氮化硅是由氨/硅甲烷作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述中折射率递增层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由疏松逐渐变致密而形成，使得所述中折射率递增层中形成折射率由低到高的梯度区域；所述中折射率递减层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由致密逐渐变疏松而形成，使得所述中折射率递减层中形成折射率由高到低的梯度区域。
  6. 如权利要求2所述的高穿透性液晶显示面板制造方法，其中，所述第二层间绝缘层的所述上折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述上折射率递减层中形成折射率由高到低的梯度区域。
  7. 如权利要求1所述的高穿透性液晶显示面板制造方法，其中，所述制造方法进一步包括：平坦层形成步骤，包括形成平坦层在所述第二层间绝缘层上；透明电极层形成步骤，包括形成透明电极层在所述平坦层上；以及钝化层形成步骤，包括形成钝化层在所述透明电极层上。
  8. 如权利要求1所述的高穿透性液晶显示面板制造方法，其中，所述透明电极层以氧化铟锡制造；所述钝化层以氮化硅制造。
  9. 一种高穿透性液晶显示面板，包括：
    玻璃基板；
    氮化硅层，形成在所述玻璃基板上；
    折射率渐变层，形成在所述氮化硅层上，且包括下折射率递减层以及下折射率恒定层；所述下折射率递减层是形成在所述氮化硅层上，且所述下折射率递减层的折射率是沿着远离所述氮化硅层的方向而逐渐递减；所述下折射率恒定层是形成在所述下折射率递减层上；
    栅极绝缘层，形成在所述折射率渐变层上；
    第一层间绝缘层，形成在所述栅极绝缘层，且包括中折射率递增层、中折射率恒定层以及中折射率递减层；所述中折射率递增层的折射率是沿着远离所述栅极绝缘层的方向而逐渐递增；所述中折射率恒定层形成在所述中折射率递增层上，且所述中折射率恒定层的折射率为恒定；所述中折射率递减层的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减；以及
    第二层间绝缘层，形成在所述第一层间绝缘层，且包括上折射率递减层、以及上折射率恒定层；所述上折射率递减层的折射率是沿着远离所述第一层间绝缘层的方向而递减；所述上折射率恒定层形成在所述上折射率递减层上，且所述上折射率恒定层的折射率为恒定。
  10. 如权利要求1所述的高穿透性液晶显示面板，其中，所述栅极绝缘层为氧化硅层。
  11. 一种高穿透性液晶显示面板制造方法，包括：
    折射率渐变层形成步骤，包括沉积氮化硅层到玻璃基板上，接着沉积折射率渐变层到所述氮化硅层上，其中所述折射率渐变层以氧化硅制造，且所述折射率渐变层包括下折射率递减层以及下折射率恒定层，所述下折射率递减层的折射率是沿着远离所述氮化硅层的方向而逐渐递减，所述下折射率恒定层是沉积在所述下折射率递减层上；
    栅极绝缘层形成步骤，包括沉积栅极绝缘层到所述折射率渐变层上；
    第一层间绝缘层形成步骤，包括沉积第一层间绝缘层到所述栅极绝缘层上，其中所述第一层间绝缘层包括中折射率递增层、中折射率恒定层以及中折射率递减层；所述中折射率递增层的折射率是沿着远离所述栅极绝缘层的方向而逐渐递增；所述中折射率恒定层形成在所述中折射率递增层上，且所述中折射率恒定层的折射率为恒定；所述中折射率递减层的折射率是沿着远离所述中折射率恒定层的方向而逐渐递减；以及
    第二层间绝缘层形成步骤，包括沉积第二层间绝缘层到所述第一层间绝缘层上；
    其中，所述第二层间绝缘层包括上折射率递减层、以及上折射率恒定层；所述上折射率递减层的折射率是沿着远离所述第一层间绝缘层的方向而递减；所述上折射率恒定层形成在所述上折射率递减层上，且所述上折射率恒定层的折射率为恒定；
    其中，所述折射率渐变层的氧化硅是由四乙氧基硅烷以及氧气作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述下折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述下折射率递减层中形成折射率由高到低的梯度区域；
    其中，所述栅极绝缘层以氧化硅制造；所述第一层间绝缘层以氮化硅制造；所述第二层间绝缘层以氧化硅制造。
  12. 如权利要求11所述的高穿透性液晶显示面板制造方法，其中，所述第一层间绝缘层的氮化硅是由氨/硅甲烷作为反应物，通过等离子体增强化学气相沉积法进行化学反应而生成；所述中折射率递增层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由疏松逐渐变致密而形成，使得所述中折射率递增层中形成折射率由低到高的梯度区域；所述中折射率递减层是通过不断改变氨/硅甲烷比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氮化硅的膜质由致密逐渐变疏松而形成，使得所述中折射率递减层中形成折射率由高到低的梯度区域。
  13. 如权利要求11所述的高穿透性液晶显示面板制造方法，其中，所述第二层间绝缘层的所述上折射率递减层是通过不断改反应四乙氧基硅烷/氧气比例、以及等离子体增强化学气相沉积法中生成等离子体之功率使氧化硅的膜质由致密逐渐变疏松而形成，使得所述上折射率递减层中形成折射率由高到低的梯度区域。
  14. 如权利要求11所述的高穿透性液晶显示面板制造方法，其中，所述制造方法进一步包括：平坦层形成步骤，包括形成平坦层在所述第二层间绝缘层上；透明电极层形成步骤，包括形成透明电极层在所述平坦层上；以及钝化层形成步骤，包括形成钝化层在所述透明电极层上。
  15. 如权利要求11所述的高穿透性液晶显示面板制造方法，其中，所述透明电极层以氧化铟锡制造；所述钝化层以氮化硅制造。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3083739A1 (fr) * 2018-07-13 2020-01-17 Schott Ag Composant optique avec revêtement antireflet résistant à la rayure et son procédé de fabrication

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110082977B (zh) * 2019-05-15 2020-11-24 深圳市华星光电技术有限公司 一种tft阵列基板及显示面板
CN110596941B (zh) * 2019-08-23 2022-08-05 武汉华星光电技术有限公司 阵列基板及液晶显示装置
US11112634B1 (en) * 2020-04-07 2021-09-07 Tcl China Star Optoelectronics Technology Co., Ltd. Substrate and display device
CN111627929B (zh) * 2020-05-25 2023-05-02 武汉华星光电技术有限公司 高穿透性液晶显示面板及制备方法
CN111458912B (zh) * 2020-06-08 2022-10-21 厦门天马微电子有限公司 显示面板以及显示装置
CN112310305B (zh) * 2020-10-19 2022-05-27 武汉华星光电半导体显示技术有限公司 显示模组及显示装置
CN114335386B (zh) * 2021-12-29 2024-01-30 湖北长江新型显示产业创新中心有限公司 显示面板和显示装置
CN114664867B (zh) * 2022-03-11 2024-05-17 京东方科技集团股份有限公司 阵列基板、液晶显示面板和显示装置
US12306376B2 (en) 2022-05-07 2025-05-20 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Anti-reflective stack and method of manufacturing the same, display panel, and display device
CN116165817B (zh) * 2022-12-12 2025-08-19 广州华星光电半导体显示技术有限公司 一种显示面板及显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070045678A1 (en) * 2005-08-24 2007-03-01 Micron Technology, Inc. Method and apparatus providing refractive index structure for a device capturing or displaying images
US20100208350A1 (en) * 2009-02-17 2010-08-19 Toppan Printing Co., Ltd. Anti-Reflection Film And Manufacturing Method Thereof
CN102439650A (zh) * 2009-05-22 2012-05-02 夏普株式会社 降低内部反射的光学结构及其方法
CN105224120A (zh) * 2014-07-03 2016-01-06 宸鸿科技(厦门)有限公司 基板结构
CN107533251A (zh) * 2014-05-05 2018-01-02 兰斯维克托公司 可变液晶光学装置
CN107810555A (zh) * 2015-07-08 2018-03-16 应用材料公司 氮氧化硅梯度构思

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100768176B1 (ko) * 2001-02-07 2007-10-17 삼성에스디아이 주식회사 광학적 전기적 특성을 지닌 기능성 박막
TW201427132A (zh) 2012-12-19 2014-07-01 Ind Tech Res Inst 複合漸變折射層結構及包括此結構之封裝結構
CN103928634B (zh) * 2014-03-24 2016-05-25 京东方科技集团股份有限公司 有机电致发光器件及其制备方法、显示装置
CN105514119A (zh) * 2016-01-04 2016-04-20 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
CN105895581B (zh) * 2016-06-22 2019-01-01 武汉华星光电技术有限公司 Tft基板的制作方法
CN107492576A (zh) * 2017-08-07 2017-12-19 苏州阿特斯阳光电力科技有限公司 一种减反射膜以及多晶硅太阳电池
CN107516713A (zh) 2017-09-30 2017-12-26 京东方科技集团股份有限公司 一种oled发光器件及制备方法、显示基板、显示装置
CN107689345B (zh) * 2017-10-09 2020-04-28 深圳市华星光电半导体显示技术有限公司 Tft基板及其制作方法与oled面板及其制作方法
CN107833835B (zh) * 2017-11-03 2019-08-06 惠科股份有限公司 低温多晶硅薄膜及晶体管的制造方法
CN207637514U (zh) * 2017-12-25 2018-07-20 中建材蚌埠玻璃工业设计研究院有限公司 信息显示用柔性多层透明导电薄膜

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070045678A1 (en) * 2005-08-24 2007-03-01 Micron Technology, Inc. Method and apparatus providing refractive index structure for a device capturing or displaying images
US20100208350A1 (en) * 2009-02-17 2010-08-19 Toppan Printing Co., Ltd. Anti-Reflection Film And Manufacturing Method Thereof
CN102439650A (zh) * 2009-05-22 2012-05-02 夏普株式会社 降低内部反射的光学结构及其方法
CN107533251A (zh) * 2014-05-05 2018-01-02 兰斯维克托公司 可变液晶光学装置
CN105224120A (zh) * 2014-07-03 2016-01-06 宸鸿科技(厦门)有限公司 基板结构
CN107810555A (zh) * 2015-07-08 2018-03-16 应用材料公司 氮氧化硅梯度构思

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3083739A1 (fr) * 2018-07-13 2020-01-17 Schott Ag Composant optique avec revêtement antireflet résistant à la rayure et son procédé de fabrication

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