WO2020130599A1 - 피부에 부착 가능한 전자 기기 및 이를 제조하는 방법 - Google Patents

피부에 부착 가능한 전자 기기 및 이를 제조하는 방법 Download PDF

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Publication number
WO2020130599A1
WO2020130599A1 PCT/KR2019/017923 KR2019017923W WO2020130599A1 WO 2020130599 A1 WO2020130599 A1 WO 2020130599A1 KR 2019017923 W KR2019017923 W KR 2019017923W WO 2020130599 A1 WO2020130599 A1 WO 2020130599A1
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WIPO (PCT)
Prior art keywords
layer
skin
forming
flexible patch
electronic device
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Application number
PCT/KR2019/017923
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English (en)
French (fr)
Korean (ko)
Inventor
한지연
연한울
김은주
김지환
Original Assignee
㈜아모레퍼시픽
메사추세츠 인스티튜트 오브 테크놀로지
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Priority claimed from US16/223,541 external-priority patent/US11109796B2/en
Application filed by ㈜아모레퍼시픽, 메사추세츠 인스티튜트 오브 테크놀로지 filed Critical ㈜아모레퍼시픽
Priority to JP2021532979A priority Critical patent/JP7503271B2/ja
Priority to CN201980085782.4A priority patent/CN113395930A/zh
Publication of WO2020130599A1 publication Critical patent/WO2020130599A1/ko

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/24—Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof

Definitions

  • Embodiments relate to an electronic device that can be attached to the skin, and more specifically, a semiconductor circuit unit, consisting of a semiconductor element (e.g., including an active layer) and circuit components (e.g., including electrodes and/or interconnects, etc.). And, the semiconductor circuit unit is used as a substrate to be integrated, relates to an electronic device including a flexible patch that can be attached to the skin and a method for manufacturing the same.
  • the flexible patch used as a circuit board has a plurality of through holes, and thus has high air permeability and strong adhesion.
  • a skin sensor is attached to a subject's skin in order to obtain information about the skin, such as skin changes and conditions.
  • the skin is the outermost and largest area of the body's outermost surface organs, which are pores, such as sweat, sebum secretion, and volatile organic emissions, essential for preserving the homeostasis of the body.
  • the skin sensor attached to the skin should be manufactured in consideration of the biological properties of the skin.
  • a high-quality skin sensor for monitoring a long-term health condition or skin condition must have both adhesion and breathability as essential requirements.
  • Conventional skin sensors are manufactured using polymer substrates such as PI or PET, which have low permeability, and when attached to the skin, they block the pores of the skin and interfere with the physiological activity of the skin and prevent inflammation and irritation. Provoking problems have been raised. If the chemical attachment is additionally used for a strong bond between the skin sensor and the skin, there is a possibility that the inflammation becomes more severe. Since the infected skin loses its protective function against the virus, secondary infection or complications may occur. In addition, due to the elastic modulus of the polymer substrate, which is about 1000 times larger than that of the skin, there is a problem that the adhesion to the skin is very low and thus it cannot be attached to the skin for a long time or the re-adhesion efficiency is very low.
  • an electronic device including a semiconductor circuit unit composed of circuit components and a flexible patch attachable to the skin, which is used as a substrate on which the semiconductor circuit unit is integrated.
  • An electronic device that can be attached to the skin includes: a semiconductor circuit unit, wherein the semiconductor circuit unit includes a circuit element including at least one of an electrode and an interconnect; And a semiconductor device including an insulating layer and an active layer; And it may include a flexible patch configured to be attached to the skin, including a plurality of through-holes.
  • the insulating layer includes a plurality of through holes corresponding to the plurality of through holes of the flexible patch.
  • the plurality of through-holes include a circular through-hole, and the distance between the plurality of through-holes may be less than 60 ⁇ m.
  • the plurality of through-holes may further include through-holes in the form of dumbbells.
  • the plurality of through-holes may include a combination of a first through-hole having a first diameter and a second through-hole having a second diameter.
  • the first diameter is larger than the second diameter, and the second through hole may be located around the first through hole.
  • the flexible patch may be disposed on the active layer such that a plurality of through holes of the flexible patch and a plurality of through holes of the insulating layer are matched in a plane.
  • the active layer may be made of a material containing AlN or GaN.
  • the circuit element may include a first electrode and a second electrode located opposite the first electrode.
  • the first electrode includes at least one first bar
  • the second electrode includes at least one second bar
  • the plane of the first bar is a zigzag shape of the first bar
  • the second The second bar extends toward the electrode
  • the plane of the second bar is zigzag, extending toward the first electrode.
  • the zigzag shape of the first bar or the second bar may include a hinge pattern located at a point where the extending direction of the bar changes.
  • the flexible patch may include a first flexible layer having a first elastic modulus and a second flexible layer having a second elastic modulus.
  • the first elastic modulus may be a value lower than the second elastic modulus.
  • the thickness t1 of the first flexible layer and the thickness t2 of the second flexible layer are determined based on the following equation:
  • t is the thickness of the flexible patch
  • E1 is the elastic modulus of the first flexible layer
  • E2 is the elastic modulus of the second flexible layer
  • R is the curvature of the flexible patch attached to the skin
  • ⁇ dSkin is the dispersion component of the skin's contact surface
  • dPatch ⁇ represents the distribution of the touch surface of the patch
  • ⁇ pSkin is the polar component of the contact surface of the skin
  • ⁇ pPatch represents the polarity component of the contact surface of the patch.
  • a method of manufacturing an electronic device attachable to skin includes forming a sacrificial layer on a first substrate; Forming a semiconductor circuit unit including a semiconductor element and a circuit element on the sacrificial layer; Bonding a flexible patch including a plurality of through holes on the semiconductor circuit; And etching the sacrificial layer to manufacture the electronic device including the semiconductor circuit unit and the flexible patch.
  • forming the semiconductor circuit unit comprises: forming a circuit element on the sacrificial layer, the circuit element comprising one or more of an electrode and an interconnect; Forming an insulating layer on the circuit element-the insulating layer is formed to have a plurality of through holes corresponding to a plurality of through holes of the flexible patch; And forming an active layer on the insulating layer.
  • forming the active layer comprises: forming an active layer on a second substrate; Forming a stresser layer on the active layer; Placing a tape on the stresser layer; Peeling the active layer and the stresser layer from the second substrate using the tape; Transferring a peeled active layer and a stresser layer onto the insulating layer-the peeled active layer is transferred onto the insulating layer; And peeling the stresser layer from the active layer using the tape.
  • the stressor layer is made of a plurality of layers
  • the step of forming the stressor layer may include forming a first stressor layer on the active layer by evaporating; Forming a second stressor layer on the first stressor layer by sputtering deposition; And forming a third stressor layer on the second stressor layer by sputtering deposition.
  • the second stressor layer may be made of a material containing Al
  • the third stressor layer may be made of a material containing Ni.
  • the first stressor layer may be made of a material containing Ni or AgNi.
  • the bonding step may further include applying pressure between the flexible patch and the semiconductor circuit unit.
  • a method of manufacturing an electronic device attachable to a skin may further include plasma treatment of the semiconductor circuit unit and the flexible patch prior to bonding.
  • the flexible patch in the bonding step, may be disposed on the active layer such that a plurality of through holes of the flexible patch and a plurality of through holes of the insulating layer are matched in a plane.
  • the sacrificial layer may be formed of any one of Ni, Cr, Al, and combinations thereof.
  • forming the semiconductor circuit unit may include forming an active layer on the sacrificial layer; Forming an insulating layer on the active layer; And forming a circuit element on the insulating layer, wherein the circuit element includes one or more of an electrode and an interconnect.
  • a method of manufacturing an electronic device attachable to skin includes forming a sacrificial layer on a first substrate; Forming a semiconductor circuit unit including a circuit element and a semiconductor element on the sacrificial layer; Forming a flexible patch layer on the semiconductor circuit unit; A step of contacting a mold including a groove to form a plurality of through holes to a flexible patch layer-a mold portion excluding the groove penetrates the flexible patch layer; And etching the sacrificial layer to manufacture an electronic device.
  • forming the semiconductor circuit unit on the sacrificial layer comprises: forming a circuit element on the sacrificial layer, the circuit element comprising one or more of an electrode and an interconnect; Forming an insulating layer on the circuit element, wherein the insulating layer includes a plurality of through holes corresponding to a plurality of through holes of the flexible patch layer formed by the mold; And forming an active layer on the insulating layer.
  • forming the semiconductor circuit unit on the sacrificial layer may include forming an active layer on the sacrificial layer; Forming an insulating layer on the active layer, wherein the insulating layer includes a plurality of through holes corresponding to a plurality of through holes of the flexible patch layer formed by the mold; And forming a circuit element on the insulating layer, wherein the circuit element includes one or more of an electrode and an interconnect.
  • a method of manufacturing an electronic device attachable to a skin includes forming a polyamide layer on the sacrificial layer before forming an active layer; And after contacting the mold to the flexible patch layer, removing the polyamide layer.
  • forming the active layer may include forming the active layer on the polyamide layer using a transfer structure.
  • a method of manufacturing an electronic device attachable to a skin may further include patterning the active layer such that the width of the active layer is smaller than the width of a through hole to be formed by the mold.
  • the step of contacting the mold including the plurality of grooves with the flexible patch layer may include heating the flexible patch layer.
  • a groove capable of forming a plurality of circular through-holes and a plurality of dumbbell-shaped through-holes and a combination thereof may be formed on the surface of the mold.
  • a groove capable of forming a plurality of circular through-holes and a plurality of dumbbell-shaped through-holes may be formed on the surface of the mold.
  • a method of manufacturing an electronic device attachable to a skin may further include forming one or more alignment keys for alignment of a penetrating mold.
  • the arrangement key is configured to have a height
  • the mold further includes one or more key holes corresponding to the plane of the arrangement key.
  • the width of the groove forming the through hole may be less than 60 ⁇ m.
  • forming the flexible patch layer may include: forming a third flexible layer having a third elastic modulus on the semiconductor circuit unit; And forming a fourth flexible layer having a fourth elastic modulus on the third flexible layer.
  • the fourth elastic modulus has a lower value than the third elastic modulus.
  • An electronic device manufacturing method may manufacture electronic devices by bonding semiconductor circuit units including various circuit elements and semiconductor elements, such as electrodes and interconnects, on a flexible patch configured to be attached to skin.
  • an electronic device in which circuit elements and semiconductor elements are disposed on a flexible patch can be manufactured. Patches that must adhere to the skin's surface should be flexible.
  • the present invention can solve a problem that occurs when a circuit element and/or a semiconductor element is directly integrated on a flexible patch through a reverse process of integrating a semiconductor circuit in reverse order.
  • the flexible patch of such an electronic device may include a plurality of through-holes and have high air permeability and strong adhesion. Due to this, even if the electronic device is worn on the skin, it does not affect the skin condition.
  • the plurality of through-holes may be configured to have different sizes in order to maximize the function of the semiconductor circuit disposed on the flexible patch.
  • the electronic device of the electronic device when the semiconductor device of the electronic device includes a piezoelectric material, the electronic device may be used as a skin sensor that can be attached to the skin to obtain skin deformation and/or elasticity information.
  • the piezoelectric material for which deformation is detected is disposed on a relatively large through hole, so that the skin sensor can more effectively obtain skin deformation information due to the physiological behavior of the skin.
  • the electronic device of the electronic device when configured to respond to light, the electronic device may be used as an optical sensor or image sensor for a skin surface.
  • the electronic device of the electronic device when configured to respond to moisture, the electronic device may be used as a moisture sensor for measuring moisture loss in the skin.
  • FIGS. 1A to 1C are diagrams schematically illustrating electronic devices attached to a subject's skin according to embodiments of the present invention.
  • FIGS. 2A to 2C are diagrams for explaining the operating principle of the skin sensor according to an embodiment of the present invention.
  • FIG 3 is a graph showing skin strain over time, measured by a skin sensor, according to an embodiment of the present invention.
  • 4A to 4B are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a first embodiment of the present invention.
  • 5A to 5C are cross-sectional views illustrating a process of preparing a semiconductor structure in which an active layer is formed in the manufacturing process of the skin sensor 1 according to the first embodiment of the present invention.
  • 6A to 6E are diagrams for explaining an electrode and/or interconnect structure configured to have oxetic properties according to an embodiment of the present invention.
  • FIG. 7 is a view for explaining a transfer structure according to an embodiment of the present invention.
  • FIG 8 is a view schematically showing a manufacturing process of the flexible patch 30 according to an embodiment of the present invention.
  • 9A to 9D are diagrams for explaining a flexible patch formed by a mold according to embodiments of the present invention.
  • 10A to 10D are diagrams for explaining adhesion of a flexible patch attached to skin according to an embodiment of the present invention.
  • 11A to 11B are conceptual views schematically showing a manufacturing process of a skin sensor according to a second embodiment of the present invention.
  • 12A to 12H are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a third embodiment of the present invention.
  • FIGS. 13A to 13K are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a fourth embodiment of the present invention.
  • first, second and third are used to describe various parts, components, regions, layers and/or sections, but are not limited thereto. These terms are only used to distinguish one part, component, region, layer or section from another part, component, region, layer or section. Accordingly, a first portion, component, region, layer or section described below may be referred to as a second portion, component, region, layer or section without departing from the scope of the present invention.
  • the electronic device attachable to the skin includes a substrate attachable to the skin; And a semiconductor circuit unit integrated on the substrate.
  • the semiconductor circuit unit includes an active layer; It includes a semiconductor device including an insulating layer, and circuit connection components such as electrodes and/or interconnects, and operates as circuits that perform functions of electronic devices.
  • the electronic device may be configured to operate by itself or electrically connected to an external device.
  • the electronic device attachable to the skin may be a skin sensor capable of obtaining information of the attached skin.
  • the description related to the electronic device attachable to the skin of the present invention is not limited to the skin sensor. According to embodiments of the present invention, an electronic device (eg, a light emitter) operating with a function other than a sensor and the same can be manufactured.
  • FIGS. 1A to 1C are diagrams schematically illustrating electronic devices attached to a subject's skin according to embodiments of the present invention.
  • the electronic device 1 may be attached to a subject's skin.
  • the electronic device 1 is a semiconductor circuit unit 10 that operates to perform a function of a sensor, and a substrate on which the semiconductor circuit unit 10 is integrated, and includes a flexible patch 30 that can be attached to the skin. Includes.
  • the semiconductor circuit unit 10 is composed of semiconductor elements including semiconductor materials, and circuit components such as electrodes and/or interconnection components (eg, interconnects, etc.).
  • the function of the semiconductor circuit unit 10 depends on the semiconductor element and/or circuit component.
  • the semiconductor circuit unit 10 when the active layer of the semiconductor circuit unit 10 is made of a piezoelectric material, the semiconductor circuit unit 10 operates as a piezoelectric element circuit in which characteristics of a current change according to a change in shape of the active layer, and the semiconductor circuit unit ( The electronic device 1 including 10) may operate as a skin deformation sensor that obtains skin deformation information and, further, elasticity information.
  • the semiconductor circuit unit 10 operates as a change detection structure. This will be described in more detail with reference to FIGS. 2 and 3 below.
  • the electronic device 1 may operate as a skin optical sensor or a skin image sensor.
  • the electronic device 1 may operate as a skin moisture sensor.
  • the electronic device 1 may operate as a skin light-emitting massager.
  • the semiconductor circuit unit 10 will be described as an example of a sensor circuit unit that can detect deformation of the skin, including a piezoelectric material (hereinafter, the semiconductor circuit unit 10 is sometimes referred to as a sensor unit circuit). (Referred to as (10)), describing the electronic device 1 as an example of a skin sensor including the sensor unit circuit 10 (hereinafter, the electronic device 1 is sometimes referred to as a skin sensor 1). The invention is described by way of example.
  • a skin sensor 1 that can be attached to the skin.
  • the skin sensor 1 may be configured to be attached to the skin and obtain information about the skin.
  • the skin sensor 1 includes a flexible patch 30 in which a plurality of air permeable through holes H are formed and a sensor circuit unit 10 bonded to the flexible patch 30.
  • the flexible patch 30 is a substrate on which the semiconductor circuit unit 10 is integrated, and is configured such that at least one surface has a viscosity that can be attached to the skin.
  • the flexible patch 30 is configured to have high air permeability and strong adhesion, including a plurality of through holes. This will be described in more detail with reference to FIGS. 2 and 3 below.
  • the skin sensor 1 is formed in a free standing shape on the breathable through hole H.
  • the active layer of the skin sensor unit 10 is composed of a free standing type structure positioned on a through hole. Since the active layer, which is a piezoelectric material, hangs freely in a through hole for skin breathability, it is possible to efficiently measure the change in the through hole due to skin deformation. That is, the active layer of the skin sensor 1 can be bent effectively according to skin deformation induced by mechanical stress.
  • the skin sensor 1 comprises a sensor circuit unit 10 disposed on a flexible patch 30, which sensor circuit unit 10 is a circuit component (eg, electrode 111 and/or interconnect 112). ), an insulating layer 113 and an active layer 115.
  • sensor circuit unit 10 is a circuit component (eg, electrode 111 and/or interconnect 112).
  • circuit component eg, electrode 111 and/or interconnect 112
  • sensor circuit unit 10 may include circuit components (eg, electrodes 111 and/or interconnects 112) disposed on flexible patch 30, as shown in FIGS. 1B-1C, It includes an insulating layer 113 disposed on the circuit component, and an active layer 115 disposed on the insulating layer 113.
  • the components 111, 112, 113, and 115 disposed on the flexible patch 30 may be configured to have through holes corresponding to at least one of the through holes of the flexible patch 30. For this reason, the electronic device 1 can have strong adhesion, and high air permeability can be secured.
  • the sensor circuit unit 10 is disposed on the active layer 115 disposed on the flexible patch 30, the insulating layer 113 disposed on the active layer 115, and the insulating layer 113 Circuit components.
  • the operating principle of the skin sensor 1 will be described in more detail with reference to FIG. 2 below.
  • the skin sensor 1 may include one or more semiconductor circuit units 10.
  • the semiconductor circuit unit 10 may be configured to perform the same function, or may be configured to perform different individual functions.
  • the skin sensor 1 has a variety of information about the skin of the skin holder (eg, skin elasticity information, skin deformation) while the semiconductor circuit is attached to the skin through a flexible patch while minimizing the effect on the skin of the skin holder even when attached for a long time. Information, etc.).
  • FIGS. 2A to 2C are diagrams for explaining the operating principle of the skin sensor 1 according to an embodiment of the present invention.
  • the skin sensor 1 may be detachably attached to the skin Ts and Td.
  • the skin includes a stratum corneum (Ts) and a dermal layer (Td).
  • Ts stratum corneum
  • Td dermal layer
  • the skin sensor 1 is in close contact with the surface of the stratum corneum Ts.
  • the mechanical change of the skin causes a change in the through hole H. Therefore, if the change in the through hole H can be measured, information on the mechanical change of the skin can be obtained.
  • the mechanical changes of the skin can be analyzed based on the mechanism of the skin membrane.
  • the skin consists of a stratum corneum up to approximately 20 ⁇ m, and an epidermal and dermal layer up to approximately 2 mm. Accordingly, when the dermal layer is viewed as a substrate, the stratum corneum has a thin film structure at a ratio of approximately 1/100 to the dermal layer. Accordingly, when the skin is dried, the volume shrinkage of the stratum corneum layer, which is relatively thin, is induced.
  • the skin sensor 1 is attached to the through hole H in a free standing type to detect a change in pressure by detecting a change in pressure applied to the change detection structure according to a change in size of the through hole H attached to the skin It can be configured to.
  • the rate of skin change may be defined as the following [Equation 1] for the initial length L0 and the length Lt of the skin in a predetermined region.
  • the rate of skin change can be provided as a quantitative value.
  • the situation (a) of FIG. 2A shows a case where no pressure is applied due to no skin change.
  • the through hole may have a length of d3.
  • the situation (b) of FIG. 2B shows a case in which substances containing moisture are released from the skin over time.
  • tensile stresses F5, F6
  • the through hole may have a length of d4.
  • d4 has a longer length than d3.
  • the situation (c) of FIG. 2c represents a case where drying continuously occurs. If the drying occurs continuously, cracks (C) are generated in the stratum corneum, and the size of the through hole decreases compared to the situation (b). Therefore, the tensile stress applied to the active layer 115 disposed on the through-hole decreases, and in this case, may have a length of d5. d5 has a shorter length than d4.
  • the amount of skin change can be measured according to the pressure applied to the active layer 115 disposed on the through-hole.
  • FIG 3 is a graph showing skin strain over time, measured by a skin sensor, according to an embodiment of the present invention.
  • the situation (a) of FIG. 2A corresponds to the exposure start time in the graph of FIG. 3.
  • the tensile stress increases with drying of the stratum corneum, and the skin deformation continuously increases.
  • the sensor circuit unit 10 operating as a sensor is located on the flexible patch 30. That is, the flexible patch 30 is used as a substrate on which the circuit is integrated. Unlike the commonly used circuit boards, the flexible patch 30 is soft and sticky. Therefore, it is difficult to manufacture the skin sensor 1 of the present invention by simply sequentially integrating circuit components on a substrate.
  • 4A to 4B are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a first embodiment of the present invention.
  • a method for manufacturing a skin sensor 1 includes forming a sacrificial layer 105 on a substrate 101 (S401); Forming a sensor circuit unit 10 on the sacrificial layer 105 (S410), forming an electrode 111 and/or interconnect 112 on the sacrificial layer 105 (S411); Forming an insulating layer 113 on the electrode and/or interconnect (S413); And forming an active layer 115 on the insulating layer 113 (S415); Bonding the sensor circuit unit 10 (ie, the active layer 115) and a flexible patch 30 (S430 ); And etching the sacrificial layer 105 to manufacture the skin sensor 1 (S450).
  • the substrate 101 (or referred to as the first substrate) is used to stack the inner layers of the sensor circuit unit 10. That is, the substrate 101 is a substrate used to form components of the sensor circuit unit 10, such as the electrode 111 and/or the interconnect 112, the active layer 115, and the like. In one example, the substrate 101 is made of silicon (Si), and a sacrificial layer 105 may be formed on the substrate 101 (S401).
  • the sacrificial layer 105 is made of a material (for example, metal) that is resistant to organic solvents and capable of photo-lithography.
  • the sacrificial layer 105 may be made of a material including one or more of Cr, Al, Ni, Au, and combinations thereof.
  • the sacrificial layer 105 is one material property related to adhesion (e.g., standard oxidation potential) and/or other material properties related to thermal stability (e.g., melting temperature). ). In this case, the sacrificial layer 105 may have strong adhesion and thermal stability sufficient to withstand various strains. In some embodiments, the sacrificial layer 105 may be made of a material including one or more of Cr, Al, Ni, and combinations thereof.
  • a semiconductor structure operating as a sensor circuit unit 10 is formed on the sacrificial layer 105.
  • 5A to 5C are cross-sectional views illustrating a process of preparing a semiconductor structure in which an active layer is formed in the manufacturing process of the skin sensor 1 according to the first embodiment of the present invention.
  • a conductive layer including an electrode 111 and/or an interconnect 112 is formed on the sacrificial layer 105 (S411 ).
  • the electrode 111 and/or the interconnect 112 are circuit components made of a conductive material (eg, gold (Au), platinum (Pt)), and are skinned by transmitting a current change based on an active layer functioning as a piezoelectric element.
  • the sensor 1 is operated.
  • the skin sensor 1 is configured to be deformable according to the skin surface, and is also configured to have strong durability despite excessive deformation of the skin sensor 1 in the de-attachment process. Accordingly, the electrode 111 and/or the interconnect 112 are formed to have a structure resistant to deformation.
  • 6A to 6E are diagrams for explaining an electrode and/or interconnect structure configured to have oxetic properties according to an embodiment of the present invention.
  • the electrode 111 and/or the interconnect 112 is formed on the sacrificial layer 105 in a planar structure in which oxetic characteristics can be implemented (S411).
  • the auxetic structure generally refers to a structure in which its dimension increases in a direction orthogonal to the first direction when a tensile force is applied in the first direction.
  • the oxetic structure can be described as having a length, width and thickness, when the oxetic structure is subjected to a tensile force in the longitudinal direction, the width is increased.
  • the length and width are increased when the oxetic structure is stretched in the longitudinal direction, and the width and length are increased when stretched in the transverse direction, but the thickness is not bidirectional.
  • This oxetic structure is characterized by having a negative Poisson's ratio.
  • the first electrode 111A and the second electrode 111B are formed on the sacrificial layer 105.
  • the first electrode and the second electrode 111A and 111B include one or more bars.
  • the bar included in the first electrode 111A has a zigzag shape in a plane, and extends to the second electrode 111B on the opposite side.
  • the plane is also in a zigzag shape, and extends to the first electrode 111A on the opposite side.
  • Each of the electrodes 111A and 111B includes a zigzag bar, and thus may have characteristics generated by an oxetic structure (ie, oxetic structure characteristics).
  • the bar may be configured to have a circular cut hinge pattern at a point at which the extension direction of the bar changes.
  • the white paper pattern can prevent crack propaganda.
  • the interconnect 112 is configured to form a dumbbell-shaped hole, which has a circular shape at both ends and a central portion connecting the circles at both ends, with a pillar having a thickness smaller than the diameter of both ends. Further, the interconnect 112 is configured to form a circular hole (D-mbbell-hole pattern).
  • the interconnect 112 in which the through hole is formed may have characteristics generated by an oxetic structure (that is, oxetic structure characteristics).
  • the electrode 111 and/or interconnect 112 having such an oxetic structural property may be formed on the sacrificial layer 105 in various ways.
  • the electrode 111 and/or interconnect 112 is formed in a photolithography-based etching process using a mask (eg, as shown in FIG. 6E) configured to form an oxic structure after forming the conductive layer. It can be formed by.
  • the conductive layer region corresponding to the dark portion is formed as an interconnect
  • the conductive layer region corresponding to the bright portion is formed as a through hole.
  • an insulating layer 113 is formed (S413).
  • the insulating layer 113 may be an oxide layer (SiO2) formed on the surface of the silicon (Si) substrate 110.
  • SiO2 oxide layer
  • the insulating layer 113 may be made of an oxide material other than silicon oxide.
  • the insulating layer 113 may include a plurality of through holes to ensure air permeability.
  • the through hole of the insulating layer 113 is formed to match the through hole of the flexible patch 30 so as not to interfere with the flow of air moving through the through hole of the flexible patch 30. Due to this, the breathability of the skin sensor 1 is maximized.
  • the through hole of the insulating layer 113 may be formed by a photolithography-based etching process.
  • the active layer 115 may be formed on the insulating layer 113 (S415). The process of forming the active layer 115 and the active layer 115 will be described in more detail with reference to FIG. 7 below.
  • the active layer 115 may be formed on the insulating layer 113 by being transferred by a transfer structure (S415).
  • the transfer structure is a structure formed on the substrate 701, and includes a metal layer 710 formed on the substrate 701; An active layer 115 formed on the metal layer 710; A stresser layer 730 formed on the active layer 115; And a tape layer 750 disposed on the stresser layer 730.
  • the substrate 701 (or referred to as a second substrate) is a substrate used to form a transfer structure, and is a substrate different from the substrate 101.
  • the active layer 115 is formed on the substrate 701.
  • the substrate 701 may be made of a material including silicon (Si).
  • the active layer 115 may be formed on the metal layer 710 formed on the substrate 701.
  • the metal layer 710 is configured to have weak adhesion so that the active layer 115 is more easily transferred.
  • the metal layer 710 may be made of a material including gold (Au).
  • the active layer 115 is a layer made of a material having semiconductor properties and performs a main function of the electronic device 1 that can be attached to the skin.
  • the active layer 115 has excellent electron transport properties and may be made of a material including Ga and Al that can be used as a piezoelectric material. have.
  • the active layer 115 may be made of AlN or GaN-containing material.
  • the stresser layer 730 enhances the semiconductor characteristics by applying a deformation to the material of the active layer 115.
  • the piezoelectric performance may be enhanced by the stressor layer 730.
  • the active layer 115 is configured to minimize the formation of cracks in the process of being transferred on the insulating layer 113.
  • the stresser layer 730 may be formed of a multi-layer structure including a plurality of layers having various materials and various thicknesses.
  • the stressor layer 730 includes three layers 731-735.
  • the first stressor layer 731 may be a high-stress metal layer made of a material containing Ni (eg, Ni, or AgNi, etc.).
  • the second stressor layer 733 may be made of a material containing Al.
  • the third stressor layer 735 may be made of a material containing Ag.
  • the thickness of the first stressor layer 731 may be formed differently depending on the material. For example, when the first stressor layer 731 is made of Ni, the thickness of the first stressor layer 731 may be 50 nm. Meanwhile, when the first stressor layer 731 is made of AgNi, the thickness of the first stressor layer 731 may be 70 nm.
  • the formation method may be the same for each stressor layer, or it may be different.
  • the first stressor layer 731 formed on the active layer 115 may be formed by evaporating.
  • the second stressor layer 733 formed on the first stressor layer 731 and the third stressor layer 735 formed on the second stressor layer 735 may be formed by sputtering deposition.
  • the formation speed of each stressor layer may be different from each other.
  • the second stressor layer 733 may be 1.8 1.8 -1 and the third stresser layer 735 may be 2 ⁇ s -1 .
  • the second stressor layer 733 may be formed of 0.4 ⁇ s -1
  • the third stresser layer 735 may be formed of 2 ⁇ s -1 .
  • the transfer structure of FIG. 7 is peeled from the substrate 701 by the tape layer 750, and the peeled active layer 115 is transferred on the insulating layer 113. Thereafter, the tape layer 750 and the stressor layer 730 are removed, and a conductive layer including the substrate 101, the sacrificial layer 105, the electrode 111, and/or the interconnect 112; A laminate including the insulating layer 113 and the active layer 115 is formed.
  • the transfer of the active layer 115 using the transfer structure of FIG. 5 may be performed within a range of approximately 165°C. In this case, the amount of tape residue on the active layer 115 is minimized.
  • the active layer 115 made of high performance, single crystal piezoelectric semiconductor materials may be transferred on the insulating layer 113 using 2D material based layer transfer (2DLT). .
  • the flexible patch 30, which is a component attached to the skin, is disposed on the active layer 115 of the semiconductor structure, and the disposed flexible patch 30 is bonded to the active layer 115 (S430). .
  • FIG 8 is a view schematically showing a manufacturing process of the flexible patch 30 according to an embodiment of the present invention.
  • a method of manufacturing the flexible patch 30 includes forming a sacrificial layer on a mold having a plurality of concave grooves formed on one surface (S810); And forming a flexible patch layer on the sacrificial layer (S830).
  • a wet/dry etch method is used to form a geometric planar structure such as a micro-hole patterned surface, as shown in FIGS. 1A and 1B.
  • a relatively soft flexible material eg, PDMS, etc.
  • a shape that forms a geometric planar structure such as a hole is damaged when a dry/wet etch method is used to form the geometric planar structure.
  • a mold 810 in which a plurality of concave grooves are formed it is possible to obtain a flexible patch layer 830 whose hole shape is not broken.
  • the mold 810 is configured such that the groove is formed on one surface to have a geometric plane.
  • the cross section of the groove forming the geometric plane of the form 810 is concavely formed into one surface, as shown in FIG. 8.
  • any material having fluidity for example, including a flexible material used to form the flexible patch layer 830
  • the optional material fills the groove.
  • the optional material is cured, a height structure corresponding to the filled groove is formed inside the groove.
  • the groove may be configured to have a single step, or may be configured to have one or more steps.
  • the flexible patch layer 830 includes a layer of a material that can be attached to the skin. Therefore, when the flexible patch layer 830 is directly formed on the mold 810, it is difficult to separate the flexible patch layer 830 from the mold 810, and in this process, the flexible patch layer 830 is damaged. When it occurs, there is a fear that the quality of the flexible patch 30 is impaired.
  • a sacrificial layer having an anti-sticky layer function preventing adhesion between the flexible patch layer 830 and the mold 810 820 is formed between the mold 810 and the flexible patch layer 830 (S810). By using the sacrificial layer 820, the flexible patch layer 830 can be separated from the mold 810 without damage, thereby obtaining a high-quality flexible patch 30.
  • the mold 810 is not etched by an etching solution, and can maintain its shape even when a certain heat is applied, and is configured to have a certain hardness.
  • the mold 810 is made of a non-magnetic material. In one example, it may be made of a material containing silicon (Si), but is not limited to this, and is not removed by a material that removes the sacrificial layer 820 below, and can maintain its shape even above a certain temperature, and mold making It can be made of various materials that are not difficult.
  • 9A to 9D are diagrams for explaining a structure of a mold and a plurality of through-holes of a flexible patch formed according to the mold according to embodiments of the present invention.
  • the mold 810 has a shape and distribution of grooves, which allows holes to be formed with excellent characteristics of the flexible patch 30, such as breathability and adhesion.
  • the grooves formed on the surface of the mold 810 may be configured to form a plurality of circular through-hole patterns.
  • a mold 810 in which a groove having a circular rim is formed may be used.
  • FIG. 9A it is possible to obtain a flexible patch 30 including a through hole having a plane of FIG. 9B.
  • the grooves formed in the mold 810 may be distributed such that the gap between the holes of the flexible patch 30 is less than 60 ⁇ m.
  • the width of the groove may be less than 60 ⁇ m.
  • Sweat pores have a variety of sizes depending on the skin location.
  • the area of the pores has a diameter of 60 ⁇ m or more, and is known to have an average diameter of 80 ⁇ m.
  • the biological functions performed by sweat such as the amount of wastes to be discharged and the temperature control, are different depending on the skin position, they are arranged at different distribution densities depending on body parts.
  • the pores are such parts are distributed at a density of 60cm -2, the palm 400 cm -2, and the forehead 180 cm -2.
  • the gap between the holes of the flexible patch 30 should be less than 60 ⁇ m.
  • the distance between the holes is 60 ⁇ m or more, the surface of the flexible patch 30 other than the hole may block the sweat hole. Accordingly, the flexible patch 30 having a gap between holes of less than 60 ⁇ m can obtain higher air permeability (eg, almost 100% air permeability).
  • the flexible patch 30 may be manufactured using a mold 10 that has a through-hole pattern with a gap between holes of 50 ⁇ m.
  • the main factor to achieve high breathability is the spacing between through holes.
  • the size of the through hole affects both adhesion and breathability. This is because the larger the size of the through hole, the larger the area of the skin in contact with the air, but the volume of the skin to be collected decreases. In embodiments of the present invention, even if the size of the through hole is small, by reducing the distance between the through holes, high air permeability and strong adhesion can be obtained.
  • the size of the through hole can be variously set within a range that does not impair adhesion.
  • the groove of the surface of the mold 810 is formed in consideration of the design of the semiconductor circuit to be integrated on the flexible patch 30.
  • a groove formed on the surface of the mold 810 forms a plurality of circular hole patterns, while the circular hole pattern surrounds one circular hole having a relatively large diameter, and the circular hole And a combination of a plurality of circular holes having a smaller diameter.
  • the piezoelectric that undergoes major deformation The element portion may be set to form a through hole having a relatively size, and the remaining portion may form a through hole having a relatively small size. In this case, only a small number of through-holes in which the piezoelectric elements are disposed are large in size, and the remaining through-holes that occupy most of the flexible patch 30 have a small enough size to capture the skin, and thus still have strong adhesion.
  • the flexible patch 30 may be formed to have characteristics (ie, oxetic structure characteristics) generated by oxetic structures.
  • the groove of the mold 810 may be configured to form a circular through-hole in the flexible patch 30, and may also be configured to form a through-hole having a flat shape of a dumbbell.
  • the flexible patch 30 having such a through-hole may have an oxetic structure characteristic. That is, the mold 810 is composed of a structure in which a column surrounding the empty space in the form of a circle and/or dumbbell is formed. If the mold 810 of FIG. 9C is used, a flexible patch 30 including a through hole having a plane of FIG. 9D can be obtained.
  • the spacing between holes can be formed to less than 60 ⁇ m as described above to obtain high breathability.
  • the distance between the center of the connection portion of one dumbbell through hole (H C ) and one end of the other dumbbell through hole (H C ) is 35 ⁇ m
  • one dumbbell through hole ( The distance between one end of H C ) and the other round through hole H B may be 25 ⁇ m.
  • the diameter of the circular through hole (H B ) may be 50 ⁇ m
  • the internal spacing of one end of the dumbbell through hole (H C ) may be 100 ⁇ m.
  • this is merely exemplary, and may be variously set based on the breathability, adhesion, and durability of the flexible patch 30.
  • the sacrificial layer 820 may be formed on the mold 810 of FIG. 9A by a spin coating method.
  • the PDMS patch layer 830 cannot be separated from the mold 810 of FIG. 9C, for example, 60 ⁇ m It is not possible to manufacture the flexible patch 30 having holes formed at intervals of tens of micro units (such as spacing).
  • the mold 810 of FIG. 9C is configured to form a through hole in a circular and dumbbell form, so that the contact area between the mold 810 and the PDMS patch layer 830 is compared to the embodiment using the mold 810 of FIG. 9A. This is because the PMMA spin coating becomes unbalanced because the gap between the grooves in the mold 810 of FIG. 9C is narrowed.
  • the sacrificial layer 820 is formed on the mold 810 as shown in FIG. 9C
  • the sacrificial layer 820 is formed on the mold 810 of FIG. 9C using a vaporization coating method (S130 ).
  • the vaporization coating method may be self-assembled monolayers (SAMs).
  • the sacrificial layer 820 and the flexible patch layer 830 may be formed on the mold 810 having a geometric plane associated with the oxetic structural properties. (S810, S830) Thereafter, after removing the portion of the flexible patch layer 830 exceeding the groove (S850), the sacrificial layer 820 is etched to obtain a flexible patch 30 having a geometric plane having oxetic structure characteristics. Can be obtained.
  • the flexible patch 30 of FIG. 9D manufactured using the mold 810 of FIG. 9C causes a moisture change of about 6% when comparing the amount of skin moisture change before and after attachment. That is, even if the flexible patch 30 is attached, almost no moisture loss occurs in the skin.
  • the sacrificial layer 820 is made of a material usable for manufacturing a semiconductor device of nano- to micro-units.
  • the sacrificial layer 820 is made of a material including poly(methyl methacrylate) (PMMA).
  • PMMA poly(methyl methacrylate)
  • the present invention is not limited thereto, and the sacrificial layer 820 may be made of a material including a polymer or the like.
  • the sacrificial layer 820 is formed on one surface of the mold 810 having a concave groove by a spin coating method (S810).
  • the thickness of the sacrificial layer 820 can be prevented from being attached between the mold 810 and the flexible patch layer 830, and is formed to a thickness that can be easily removed by the etching solution in step S870.
  • the flexible patch layer 830 is made of a material having a flexible property to be adhered to the skin while having a flexible property so that a conformable contact in which the patch shape is deformable according to the contour of the skin.
  • the flexible patch layer 830 may be made of an elastomer having similar mechanical properties to skin.
  • the flexible patch layer 830 may be made of a material including poly-dimethylsiloxane (PDMS).
  • the flexible patch layer 830 may be formed to have a certain thickness. If the thickness of the flexible patch layer 830 is too thin, it may not be possible to obtain a durability that can be repeatedly applied to the skin multiple times. In one example, the flexible patch layer 830 may be formed to have a thickness of 75 ⁇ m or more.
  • a flexible material eg, PDMS
  • the flexible material may fill the grooves and further overflow from inside the grooves.
  • a part of the flexible patch layer 830 may be formed at a position higher than the surface of the mold 810.
  • a casting-frame structure which is often used in the present specification for the understanding of a person skilled in the art, is a flexible material filled in a groove (or filled to overflow a groove), as shown in step S830 of FIG. 8, It refers to a structure including a mold 810, a sacrificial layer 820, and a flexible material, and the hardness of the flexible material may be soft or hard.
  • the flexible patch layer 830 exceeding the groove is removed (S850 ).
  • the plate 850 is brought into contact with a portion of the flexible patch layer 830 (ie, the excess surface) that exceeds the groove of the mold 810, and the plate 850 and/or flexible patch layer 830 ( That is, the part exceeding the groove is removed by rubbing the casting-frame structure).
  • the plate 850 serves as a plastering board, which pushes and removes the excess portion of the flexible material.
  • plate 850 includes substrate 851 and sacrificial layer 852 formed on substrate 851.
  • the substrate 851 may have a structure suitable for performing a rubbing function (eg, a flat structure), and durability, and strength.
  • the substrate 851 may be made of a non-magnetic material.
  • the substrate 851 may be made of a material including silicon (Si).
  • the sacrificial layer 852 may be formed of a material that can be etched by an etching solution in step S870.
  • the sacrificial layer 852 may include the same material as the sacrificial layer 820 (eg, PMMA).
  • the present invention is not limited thereto, and may be etched by an etching solution in step S870, and is generated on the surface of the flexible patch layer 830 after removal in the process of rubbing contact with a portion of the flexible patch layer 830 exceeding the groove. It may be made of a material that minimizes possible damage.
  • the sacrificial layer 852 may be formed on the substrate 851 by a spin coating method, but is not limited thereto, and may be formed on the substrate 851 by various coating methods.
  • the rubbing process of step S850 may further include an additional process to more effectively remove excess parts.
  • step S850 may include heating a contact portion between the flexible patch layer 830 and the plate 850. For example, by applying a heat of 70° C. or more to the contact portion between the flexible patch layer 830 and the plate 850, the flexible material in a portion exceeding the groove of the mold can be more efficiently removed.
  • the strength of the contact portion is weakened (ie, has a soft structure state). Due to this, when the plate 850 is rubbed against the flexible patch layer 830 (ie, the cast-frame structure) (or the cast-frame structure is rubbed against the plate 850), the excess portion of the flexible material is caused by relative movement. It is pushed out of the area occupied by the casting-frame structure. For example, placing a support plate on a plaster plaster and rubbing it is similar to pushing the plaster plaster underneath the support plate out of the area occupied by the support plate. Eventually, the excess portion is gradually lowered in height, and as shown in FIG. 8, the top layer of the flexible material filled in the grooves coincides with the grooved surface.
  • step S850 may include flipping the top and bottom so that the flexible patch layer 830 is disposed on one surface of the plate 850 during the contact process.
  • a flexible patch layer 830 ie, a casting-frame structure
  • the area of the plate 850 may be larger than the area of the casting-frame structure.
  • step S850 may further include applying pressure to a contact portion between the flexible patch layer 830 and the plate 850.
  • the pressure may be applied using a magnet.
  • a casting-frame structure and a plate 850 may be disposed between the magnet 861 and the magnet 862. Due to this, pressure may be applied to the contact portion by the attraction force between the magnet 861 and the magnet 862.
  • the cast-frame structure and the plate 850 may be made of a non-magnetic material, so that interaction of attraction between the magnet 861 and the magnet 862 does not affect.
  • the sacrificial layer 820 is etched using the etching solution (S870).
  • the etching is performed while adjusting the selectivity of the etching solution so as not to etch the mold 810 and the flexible patch layer 830 while etching the sacrificial layer 820.
  • the etching solution used for etching the sacrificial layer 820 may include acetone.
  • the sacrificial layer 820 is removed by immersing the casting-frame structure in which the portion of the flexible patch layer 830 exceeding the groove is removed in the etching solution, and the mold 810 and the casting (ie, flexible patch) Layer 830 is separated.
  • the separated flexible patch layer 830 includes a plurality of holes formed by grooves of the mold 810.
  • the plurality of holes are formed in a through shape because the flexible material inside the groove is matched to the surface of the mold 810 in step S850.
  • a flexible patch layer 830 including a plurality of through-holes can be obtained, and the flexible patch layer 830 including a plurality of through-holes can be used as the flexible patch 30 Can.
  • the time during which the casting-frame structure is immersed in the etching solution can be variously set.
  • the etching time of the casting-frame structure may be determined by the thickness of the groove (ie, the thickness of the flexible patch 30), the thickness of the sacrificial layer 820, the cross-sectional area where the groove and the flexible patch layer 830 abut, and the like. have.
  • the casting-frame structure in the etching solution may be ultrasonicated for a more efficient etching process.
  • the flexible patch 30 manufactured in steps S810 to S870 is manufactured in a thickness of micro units, adhesion may be increased by a plurality of holes.
  • the plurality of holes is a through-hole, and even when the flexible patch 30 is attached to the skin, it does not block the skin of the attachment portion from outside air.
  • the flexible patch 30 is surface-treated so as to have a micro structure only on the patch surface (such as an octopus sucker, or a cutting board foot), so that only the adhesion is good, and the breathability is relatively inferior to the conventional skin patch. Alternatively, it can have both breathability and adhesion.
  • the flexible patch 30 Since the flexible patch 30 has excellent adhesion and breathability to the skin, it can be used to manufacture various electronic devices that can be attached to the skin, such as a skin sensor.
  • the flexible patch 30 may have stronger adhesion due to material properties such as the components and thickness of the flexible patch layer 830.
  • 10A to 10D are diagrams for explaining the adhesion of the flexible patch 30 attached to the skin according to an embodiment of the present invention.
  • the through hole of the flexible patch 30 is a micro unit and is very small compared to the size of the flexible patch 30, and is omitted in FIG. 10 for clarity.
  • 10A is a view for explaining the principle of attachment between an object and a surface.
  • the ability of the contact object (P) to contact the surface (S) to attach to the surface (S) is in competition between structural resistance and interfacial interactions for deformation (competitive with each other in terms of reversibility and pluripotency). It is decided by. As shown in FIG. 10A, when the surface is deformed by the object P, the energy between the object P and the surface S may be expressed by the following Equation 2-5.
  • Utotal represents the total potential energy
  • Uadhesion represents the attachment energy between the object P and the surface S
  • Ubending represents the bending energy associated with the resistance of the surface S deformed by the object P.
  • the sign of the attachment energy and the bending energy only indicates the direction of interaction, and in other embodiments, the sign of the attachment energy may be expressed as +, and the sign of the bending energy may be expressed as -.
  • W is the work of adhesion (unit is N m-1)
  • b is the length of the object (P) attached to the surface
  • R is the curvature
  • ⁇ is the contact between the object (P) and the surface (S) It represents the contact angle, which is the angle from the center of the part to the point where the abutting part ends.
  • D is the flexural rigidity of the object P, which is determined by the Young's modulus of the object P and the thickness of the object.
  • the surface S corresponds to the skin surface
  • the object P is a flexible patch including a flexible patch layer 830 in which a through hole is formed. 30). Therefore, the flexural strength D for the flexible patch 30 is determined by the elastic modulus E of the flexible patch layer 830 and the thickness t of the flexible patch layer 830.
  • the flexible patch 30 when the patch 30 is made of a material having a large modulus of elasticity (eg, a stiff material), and/or has a high flexural strength D when the thickness is thick. Accordingly, the flexible patch 30 can be stably attached on the skin surface when the flexural strength D of the flexible patch 30 decreases and/or when the adhesion between the skin surface and the flexible patch 30 is large.
  • a material having a large modulus of elasticity eg, a stiff material
  • the flexible patch 30 can stably adhere on the skin surface when the thickness of the flexible patch 30 is thin.
  • the adhesion energy between the flexible patch 30 and the surface of the skin increases, the adhesion of the flexible patch 30 is enhanced.
  • the adhesion energy between the skin surface and the flexible patch 30 depends on the attachment work W.
  • the attachment work W between the flexible patch 30 and the skin surface is expressed by the following equation (7).
  • ⁇ d denotes a dispersive component of surface
  • ⁇ p denotes a polar component of surface
  • ⁇ dPatch denotes the variance of the touch surface of the patch (30)
  • ⁇ pSkin is the polar component of the contact surface of the skin
  • ⁇ pPatch patch 30 It shows the ingredients.
  • the flexible patch 30 is configured based on Equation 7 above.
  • the flexible patch 30 can be utilized to manufacture a skin sensor.
  • a PDMS patch 30 having an exemplary elastic modulus of 1 MPa sufficient to support micro-scale micro-elements in the micro-thickness range can be attached to the skin.
  • ⁇ d and ⁇ p of the skin surface are different for each site, but the maximum and minimum ranges of the variables are known as shown in Table 1 below.
  • the attachment work W between the skin and the PDMS patch 30 is roughly calculated as follows: 31 ⁇ W ⁇ 54 mJ m -2 .PDMS with elastic modulus 1MPa
  • a single flexible patch 30 having an elastic modulus lower than 1 MPa may have a thickness of less than 80 ⁇ m, it may have stronger adhesion.
  • one layer of the flexible patch 30 having a modulus of elasticity lower than 1 MPa is suitable for adherence to the skin surface even with a thickness of 80 ⁇ m or more. For example, even when the thickness of one layer attached to the skin surface is 100 ⁇ m, it may be possible to adhere to the skin.
  • flexural strength D is related to the ability of the flexible patch 30 to attach, and also to the ability to maintain the shape of the flexible patch 30. Referring to Equations 5 and 6, when the elastic modulus E of the flexible patch 30 is low, when the thickness of the flexible patch 30 is thin, the flexible patch 30 is stably attached on the skin surface. Can.
  • the flexible patch 30 may be configured to have flexural strength.
  • the flexible patch 30 may be formed of one or more layers so as to have stronger adhesion and sufficient flexural strength to support other components (eg, including electrodes, semiconductor devices, interactions, etc.). Can be configured.
  • the flexible patch layer 830 formed on the sacrificial layer 820 may include one or more sub-layers.
  • 10B is a view for explaining a flexible patch 30 having a bi-layer structure having different elastic moduli, according to an embodiment of the present invention.
  • the flexible patch 30 having a bi-layer structure includes two sub layers having different rigidities (the first flexible layer 831 of FIG. 10B, and the second flexible layer 133). can do.
  • the first flexible layer 831 attached to the skin has a lower flexural strength D1 than the flexural strength D2 of the second flexible layer 832 that is not attached to the skin.
  • the first flexible layer 831 can be configured to have a low modulus of elasticity (eg, 0.04 Mpa) to allow for a suitable attachment to the skin surface.
  • the second flexible layer 832 is more rigidly configured to facilitate handling by appropriately controlling bending of the flexible patch 30 while supporting a semiconductor circuit or the like integrated on the flexible patch 30.
  • the first flexible layer 831 has an elastic modulus E1 of 0.04 MPa
  • the second flexible layer 832 has an elastic modulus E2 of 1 MPa, so that the first flexible layer 831 It can be formed more smoothly.
  • the flexible patch layer 830 may include a first flexible layer 831 and a second flexible layer 832 that include a pre-polymer and a curing agent.
  • the second flexible layer 832 may be configured to have a larger curing agent ratio than the curing agent ratio of the first flexible layer 831.
  • the first flexible layer 831 may have a pre-polymer to curing agent ratio of 40:1
  • the second flexible layer 832 may have a pre-polymer to curing agent ratio of 10. It can consist of :1.
  • the flexural strength D of the first flexible layer 831 and the second flexible layer 832 is determined differently due to the difference in ratio of the curing agent.
  • the first flexible layer 831 is relatively soft and sticky compared to the second flexible layer 832, and the flexible patch 30 can be attached to the skin To do.
  • the relatively rigid second flexible layer 832 serves as a support (eg, a substrate) for integrating micro-scale devices when the flexible patch 30 is used to manufacture a skin sensor or the like.
  • the thickness of the first flexible layer 831 and the second flexible layer 832 may be formed differently from each other.
  • the flexural strength D is determined depending on the elastic modulus E and the thickness.
  • FIG. 10C is a view for explaining a flexible patch 30 having a bi-layer structure having different thicknesses according to the first embodiment of the present invention
  • FIG. 10D is a bi according to the first embodiment of the present invention.
  • -It is a graph showing the characteristics of the flexible patch according to the thickness of the layer structure.
  • the attached flexible patch 30 is stretched due to the characteristic of the skin surface having a generally curved structure. .
  • the stretched flexible patch 30 is applied with a restoring force (F ret ) to return to before stretching.
  • the resilience (F ret ) may be analyzed as in Equation 8 below.
  • the first flexible layer 831 and the second flexible layer 832 of the flexible patch 30 may have the same tensile stress ⁇ and tensile strain ⁇ when made of the same material (eg, PDMS).
  • F1 denotes each restoring force applied to the first flexible layer 831 attached to the skin
  • F2 denotes each of the second flexible layer 832 attached to the skin
  • t1 represents the thickness of the first flexible layer 831
  • t2 represents the thickness of the second flexible layer 832.
  • the total elastic modulus Eeq of the bi-layer structured flexible patch 30 may be expressed by the following Equation (9).
  • the effective elastic modulus of the flexible patch 30, and the refractive strength (Flexural) The rigidity), and a graph of the critical attachment work between the flexible patch 30 and the skin surface can be calculated by Equation (9) above, and the result is shown in FIG. 10D.
  • the first flexible layer 831 and the second flexible layer 832 included in the bi-layer structured flexible patch 30 refer to Equation (9) above, wherein the flexible patch 30 is manufactured (eg, skin) It may be formed to have a thickness and elastic modulus suitable for the function of the sensor).
  • the flexible patch layer 830 of the bi-layer structure is merely exemplary, and the flexible patch layer 830 of the present invention is not interpreted as being limited to the bi-layer structure.
  • the flexible patch layer 830 may be formed in a mono-layer or triple-layer structure.
  • the flexible patch layer 830 may be formed in a mono layer structure including only the second flexible layer 832.
  • the flexible patch layer 830 may be formed of a triple layer structure including a rigid second flexible layer positioned between two soft first flexible layers.
  • the triple layer structured flexible patch layer 830 may include two first flexible layers having different thicknesses.
  • the first flexible layer of the portion attached to the skin may be formed with a thickness of 10 ⁇ m, and the first flexible layer on the opposite side may be formed with a thickness of 100 ⁇ m.
  • 1MPa disclosed as an elastic modulus supporting a micro device in a micro unit is merely exemplary, and the second flexible layer 832 included in the flexible patch 30 may have a different elastic modulus.
  • the flexible patch 30 may be manufactured using the sacrificial layer 820 and thus may have high durability because no damage occurs in the process of obtaining the flexible patch layer 830 having a micro unit thickness.
  • the flexible patch 30 is bonded to the active layer 115 of the sensor circuit unit 10. It can be made (S430). Bonding can be accomplished by conventional wafer bonding techniques. In one embodiment, for bonding between the flexible patch 30 and the active layer 115 manufactured by the manufacturing process of FIG. 8, the semiconductor structure and the flexible patch 30 are plasma treated (eg, O2 plasma treatment) ) To activate the bonding surface of the semiconductor structure and the flexible patch 30.
  • plasma treated eg, O2 plasma treatment
  • the bonding surface of the flexible patch 30 may be one side of the harder layer.
  • the bonding surface of the flexible patch 30 is one side of any one of the more sticky layers Can.
  • an insulating layer (eg, SiO2) may be further formed on the semiconductor structure of FIG. 5D prior to plasma treatment.
  • additional pressure may be applied to the flexible patch and the semiconductor structure.
  • the flexible patch 30 whose surface is activated by plasma treatment is disposed on the semiconductor structure to bond the flexible patch 30 with the semiconductor structure (ie, the active layer 115) (S430).
  • the sacrificial layer 105 is removed through a process such as etching, and the flexible patch 30 is a flexible adhesive substrate attached to the skin, and the skin including the sensor circuit unit 10 integrated on the flexible adhesive substrate
  • the sensor 1 can be obtained (S450).
  • Etching is performed while adjusting the selectivity of the etching solution so as not to etch the components of the skin sensor 1 (including the sensor circuit unit 10 and the flexible patch 30) while etching the sacrificial layer 105.
  • the etching solution used for etching the sacrificial layer 105 may include acetone.
  • the bonding process (S430) may be performed based on further arrangement between components of the skin sensor 1 in order to maximize air permeability of the skin sensor 1.
  • the components of the skin sensor 1 may be arranged based on the principle of operation of the skin sensor.
  • the flexible patch 30 in the case of manufacturing the skin sensor 1 for detecting deformation of the skin, the flexible patch 30 includes a part of the active layer 115 and the flexible material of the flexible patch 30 The through hole is disposed on the active layer 115 so as not to contact (S430).
  • the flexible patch is disposed on the active layer such that a plurality of through-holes of the flexible patch and a plurality of through-holes of the insulating layer are matched in a plane. Therefore, the deformation result of the active layer 115 located in the air can be obtained to the maximum.
  • the flexible patch 30 is disposed further based on components below the active layer 115.
  • a through hole H1 of the insulating layer 113 on a part (eg, an extension bar included in the electrodes 111A and 111B) or all of the electrode 111 ) Is disposed, and the active layer 115 is disposed on the through hole H of the insulating layer 113, and the through hole H2 of the flexible patch 30 can be disposed on the active layer 115.
  • the through-hole H1 of the insulating layer 113 may be arranged such that the through-hole H2 of the flexible patch 30 and the projection portion match, as illustrated in FIG. 2B. Through this arrangement, the skin sensor 1 can effectively obtain skin information based on the operation of the active layer 115, and can secure high breathability of the skin sensor 1.
  • the flexible patch 30 may be disposed on Align glass.
  • the flexible patch 30 may not have a flat surface due to its flexible nature.
  • the adhesiveness of the flexible patch 30 increases as the surface to which the skin is attached is flat. Accordingly, after the flexible patch 30 has a flat cross-section of the flexible patch 30 on the array glass by using a ruler on the flexible patch 30, the flexible patch 30 is transferred onto a semiconductor structure and the array glass is removed.
  • the skin sensor 1 having the flexible patch 30 with a flat surface can be manufactured. Due to this, the adhesion of the skin sensor 1 can be maximized.
  • the electronic device when the semiconductor device of the electronic device includes a piezoelectric material, the electronic device may be used as a skin sensor that is attached to the skin and obtains deformation and/or elasticity information of the skin.
  • the skin sensor 1 manufactured by the above-described process may operate as a sensor in a state attached to the skin.
  • the piezoelectric material for which deformation is detected is disposed on a relatively large through hole, so that the skin sensor can more effectively obtain skin deformation information due to the physiological behavior of the skin.
  • the skin sensor 1 can be used not only to measure skin pull, but also to measure skin elasticity.
  • 11A to 11B are conceptual views schematically showing a manufacturing process of a skin sensor according to a second embodiment of the present invention.
  • the active layer 115 of the sensor circuit unit 10 is formed to be positioned closest to the flexible patch 30 among the components of the sensor circuit unit 10.
  • the active layer 115 of the sensor circuit unit 10 may be formed to be positioned farthest from the flexible patch 30 among the components of the sensor circuit unit 10. That is, the skin sensor 1 of FIGS. 1B and 1C can be manufactured.
  • the method of manufacturing the skin sensor 1 attachable to the skin similar to the first embodiment, forming a sacrificial layer 105 on the substrate 101 (S1101); Forming a sensor circuit unit 10 on the sacrificial layer 105 (S1110); Bonding the sensor circuit unit 10 and the flexible patch 30 including the through hole (S1130); And etching the sacrificial layer 105 to manufacture the skin sensor 1 (S1150).
  • forming the sensor circuit unit 10 on the sacrificial layer 105 includes: forming an active layer 115 on the sacrificial layer 105 (S1111); Forming an insulating layer 113 on the active layer 115 (S1113); And forming an electrode 111 and/or interconnect 112 on the insulating layer 113 (S1115).
  • the skin sensor 1 may be manufactured such that the active layer 115 is positioned at the top of the skin sensor 1.
  • the circuit components ie, the electrode 111 and/or the interconnect 112
  • the active layer 115 are replaced with the rest of the structure. Therefore, the operating principle of the skin sensor 1 in FIG. 11 is similar to the operating principle of the skin sensor 1 in FIG. 2, and detailed description is omitted.
  • the process of forming a semiconductor device and the process of manufacturing the flexible patch 30 including a plurality of through holes are separated.
  • the electronic device of the first or second embodiment can be manufactured by an all-in-one process.
  • 12A to 12H are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a third embodiment of the present invention.
  • the manufacturing method of the skin sensor 1 having the same structure as the first embodiment can be manufactured.
  • the manufacturing method of the skin sensor 1 according to the third embodiment of the present invention includes a process of manufacturing the flexible patch 30 and a process of manufacturing a semiconductor structure including the sensor circuit unit 10. It consists of a non-separable, all-in-one manufacturing process. That is, the manufacturing process of the flexible patch 30 and the manufacturing process of the semiconductor structure are separated from the manufacturing method of the skin sensor 1 of the first embodiment.
  • a method of manufacturing a skin sensor 1 attachable to skin includes: forming a sacrificial layer 105 on the substrate 101 (S1201); Forming a sensor circuit unit 10 on the sacrificial layer 105 (S1210), forming an electrode 111 and/or an interconnect 112 on the sacrificial layer 105 (S1211); Forming an insulating layer 113 on the electrode and/or interconnect (S1213); And forming an active layer 115 on the insulating layer 113 (S1215).
  • a flexible patch layer 830 on the sensor circuit unit 10 ie, on the active layer 115
  • S1230 forming a flexible patch layer 830 on the sensor circuit unit 10 (ie, on the active layer 115)
  • the skin sensor 1 manufactured by the manufacturing method of the skin sensor 1 of the third embodiment is monolithic in which all circuit elements and interconnections are formed on the flexible patch 30, which is a flexible adhesive substrate. It corresponds to electronic devices.
  • the manufacturing method of the skin sensor 1 of the third embodiment has the advantage of being able to produce a miniaturized and lightweight electronic device, high integration and reliability of the electronic device, and mass production possible, resulting in low cost.
  • the sacrificial layer 105 is formed in consideration of photolithography, etching selectivity, and thermal stability.
  • the sacrificial layer 105 may be made of a material including one or more of Cr, Al, Ni, Au, and combinations of the sacrificial layer 105.
  • the sacrificial layer 105 may be further formed in consideration of cost.
  • the sacrificial layer 105 may be made of, for example, a material including one or more of Cr, Al, Ni, and combinations thereof.
  • a sensor circuit unit 10 ie, a polycrystalline semiconductor structure
  • a polycrystalline active layer 115 or the like is deposited on the metal sacrificial layer 105.
  • electrode 111 and interconnect 112, insulating layer 113, and active layer 115 are sequentially formed on sacrificial layer 105.
  • the polycrystalline active layer 115 may be formed through transfer using a stressor, similar to the first embodiment.
  • the polycrystalline semiconductor material can grow regardless of the substrate, it is formed by directly growing on the sacrificial layer 105.
  • the polycrystalline active layer 115 may be formed by sputtering, evaporation, physical vapor deposition (PVD), or low-pressure CVD (CVD), plasma-enhanced CVD (CVD), or the like. It may be formed by vapor deposition directly by a vapor deposition method. In some examples, growth of the polycrystalline active layer 115 may be performed at a temperature of 500 degrees or less.
  • each layer is formed to have a through hole corresponding to the through hole of the flexible patch 30, as shown in Figure 12c, the insulating layer 113 to ensure breathability.
  • Steps S1201 and S1210 are performed by a photolithography-based etching process.
  • a flexible patch layer 830 is formed on the sensor circuit unit 10 (S1230).
  • the flexible patch layer 830 is a flexible patch 30 in which a through hole is not formed.
  • the flexible patch layer 830 is directly formed on the sensor circuit unit 10 (S1230).
  • a through hole may be formed in the flexible patch layer 830.
  • step S1240 the formation of the through-holes may be performed by a soft lithography-based process.
  • the formation of through-holes may be performed by a soft lithography process using micromolding.
  • the mold 810 is contacted with the flexible patch layer 830 to form a through hole (S1240).
  • the mold 810 may be configured with a groove structure having a flat shape shown in FIGS. 9A and 9C.
  • the groove depth of the mold 810 may have a depth greater than or equal to the thickness from the sensor circuit unit 10 (ie, the active layer 115) to the flexible patch layer 830.
  • the formwork 810 contacts the flexible patch layer 830 to reach the sensor circuit unit 10 (ie, the active layer 115) to form a through hole. That is, the mold 810 is similar to stamping a soft material. When the mold 810 is in contact with the flexible patch layer 830, the edge portion of the groove penetrates the flexible patch layer 830 so as to form a through hole in the flexible patch layer 830.
  • step S1240 a process of heating the flexible patch layer 830 may be further performed so that the edge region of the groove of the mold 810 can penetrate the flexible patch layer 830 more easily.
  • step S1240 a mold 810 capable of forming one or more through holes may be used to enhance breathability.
  • a through-hole may be formed to manufacture the free standing skin sensor 1. That is, at least one of the through holes formed by the mold 810 is disposed on the zigzag bar of the electrode 111 as described with reference to FIG. 2.
  • the through hole is formed on a portion of the electrode 111 based on one or more key holes included in the mold 810 and one or more alignment keys included in the semiconductor structure. .
  • the skin sensor 1 can have a free standing type structure. Since the structure of the skin sensor 1 manufactured by the manufacturing method according to the second embodiment is the same as that of the skin sensor 1 of the first embodiment, skin information can be obtained by the same operation principle.
  • the formwork 810 may include one or more key holes.
  • the key hole is a through hole different from the through hole of the flexible patch 30 for breathability of the skin sensor 1, and may be composed of different planes (eg, crosses) as shown in FIG. 12.
  • one or more keys matching the key hole of the mold 810 may be formed in the semiconductor structure before step S1040.
  • one or more keys having a planar shape matching the hole shape of the keyhole may be formed in step S1211.
  • the one or more keys may be formed by the same material as the material constituting the electrode 111 and/or the interconnect 112, and/or by the same method.
  • the sacrificial layer 105 is etched (S1250). After the sacrificial layer 105 is removed, the mold 810 is removed to prepare the skin sensor 1.
  • the manufacturing method according to the second embodiment forms a semiconductor circuit using photography on the substrate 101, and a biocompatible PDMS patch that does not inhibit skin breathability by using soft lithography directly thereon.
  • the skin sensor 1 can be manufactured by forming 30. Due to this, the semiconductor circuit (that is, the sensor circuit unit 10) and the flexible patch need not be made separately and then bonded, thereby reducing the complexity of the process and obtaining a high device transfer yield.
  • FIGS. 13A to 13K are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a fourth embodiment of the present invention.
  • the skin sensor 1 having the same structure as the second embodiment can be manufactured. That is, the skin sensor 1 shown in FIGS. 1B and 1C can be manufactured.
  • the process of manufacturing the flexible patch 30 and the process of manufacturing the semiconductor structure including the sensor circuit unit 10 are not separated, all-in-one (all- in one) manufacturing process. That is, the manufacturing process of the flexible patch 30 and the manufacturing process of the semiconductor structure are separated from the manufacturing method of the skin sensor 1 of the second embodiment.
  • a method of manufacturing a skin sensor 1 that can be attached to a skin includes: forming a sacrificial layer 105 on the substrate 101 (S1301); Forming a sensor circuit unit 10 (S1310); Forming a flexible patch layer 830 on the sensor circuit unit 10 (S1330); Contacting the mold 810 with the flexible patch layer 830 to form a plurality of through holes (S1340); Etching the sacrificial layer 105 to manufacture the skin sensor 1 (S1350); And removing the mold 810 (S1370).
  • the skin sensor 1 of the fourth embodiment has the same structure as the skin sensor 1 of the second embodiment. Accordingly, the sensor circuit unit 10 of the fourth embodiment is formed in order of the active layer 115, the insulating layer 113, and the circuit components (electrodes 111 and/or interconnects 112) after the sacrificial layer 105 is formed. It is laminated (S1310). That is, step S1310 includes forming an active layer 115 (S1311); Forming an insulating layer 113 on the active layer 115 (S1313); And forming an electrode 111 and/or interconnect 112 on the insulating layer 113 (S1315).
  • the skin sensor 1 can be manufactured using the active layer 115 made of a single crystal structure.
  • the single crystal material cannot be raised directly on the metal sacrificial layer 105.
  • a substrate that is the same or similar to a single crystal semiconductor and a temperature of at least 700 degrees is required. Therefore, instead of directly forming the single crystal active layer 115 on the metal sacrificial layer 105, 2DLT stressor transfer using a stressor is performed to form the active layer 115 on the metal sacrificial layer 105.
  • a polyamide layer 109 is first formed on the sacrificial layer 105 (S1309), and a single crystal thin film (ie, active layer 115) separated by a 2DLT process is polyamide.
  • a process of forming the active layer 115 by transferring to the layer 109 is added (S1311).
  • the polyamide layer 109 may be made of a material including polyamide.
  • the polyamide layer 109 is a compounding state including various fillers, and may be formed in an uncured structure.
  • step S1311 further includes a step of patterning the active layer 115 such that the width of the active layer 115 becomes smaller than the width of the through hole of the flexible patch 30.
  • the width of the active layer 115 formed in FIG. 13C is reduced by patterning, as shown in FIG. 13D.
  • an insulating layer 113 having a through hole matching the through hole of the flexible patch 30 is formed.
  • a through hole penetrating the insulating layer 113 and the flexible patch 30 may be formed on the patterned active layer 115.
  • the through hole of the insulating layer 113 is matched with the through hole of the flexible patch 30 so as not to interfere with the flow of air moving through the through hole of the flexible patch 30 Because it is formed.
  • step S1311 the active layer 115;
  • the active layer 115 is transferred onto the polyamide layer 109 using a transfer structure including a stresser layer 730 and a tape layer 750. Thereafter, the stressor layer 730 and the tape layer 750 excluding the active layer 115 are removed so that only the active layer 115 is positioned on the polyamide layer 109. Since the formation of the active layer 115 using the transfer structure is similar to that described with reference to FIG. 7, detailed description is omitted.
  • the method for manufacturing the skin sensor 1 according to the fourth embodiment further includes the step of removing the polyamide layer 109 (S1360).
  • polyamide layer 109 is removed by plasma etching (eg, including O2 plasma etching).
  • the electronic device 1 may be manufactured by a process in which the process of forming the semiconductor circuit unit 10 and the process of forming the flexible patch 30 are separated, or the semiconductor circuit unit 10 and the flexible patch by an integrated process. Electronic device 1 including 30 can be obtained.
  • the electronic device has a mechanical property similar to that of a skin and has a through hole, and thus is formed on a flexible patch having strong adhesion and high breathability.
  • Such electronic devices can be utilized as various electronic devices attached to the skin, such as a skin sensor, and thus can be used infinitely in various technical fields that can utilize skin-related electronic devices such as the healthcare field and the beauty field.

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PCT/KR2019/017923 2018-12-18 2019-12-17 피부에 부착 가능한 전자 기기 및 이를 제조하는 방법 WO2020130599A1 (ko)

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