WO2020130599A1

WO2020130599A1 - Electronic device attachable to skin and manufacturing method therefor

Info

Publication number: WO2020130599A1
Application number: PCT/KR2019/017923
Authority: WO
Inventors: 한지연; 연한울; 김은주; 김지환
Original assignee: ㈜아모레퍼시픽; 메사추세츠 인스티튜트 오브 테크놀로지
Priority date: 2018-12-18
Filing date: 2019-12-17
Publication date: 2020-06-25
Also published as: JP2022513768A

Abstract

Embodiments relate to an electronic device attachable to skin and manufacturing method therefor, the electronic device comprising: a semiconductor circuit unit comprising a circuit device including an electrode, an interconnect, and the like and a semiconductor device including an insulation layer, an activation layer, and the like; and a flexible patch configured to be attachable to skin, wherein the flexible patch includes a plurality of through-holes, and the insulation layer includes a plurality of through-holes corresponding to the plurality of through-holes of the flexible patch. In the case that the activation layer consists of a piezoelectric material, the electronic device can be utilized as a skin sensor capable of obtaining deformation and/or elasticity information of skin.

Description

Electronic devices that can be attached to the skin and methods for manufacturing the same

Cross reference to related applications

This application claims priority to U.S. Patent Application No. 16/223,541 filed on December 18, 2018 and Korean Patent Application No. 10-2019-0079400 filed on July 2, 2019. The whole is incorporated herein by reference.

Embodiments relate to an electronic device that can be attached to the skin, and more specifically, a semiconductor circuit unit, consisting of a semiconductor element (e.g., including an active layer) and circuit components (e.g., including electrodes and/or interconnects, etc.). And, the semiconductor circuit unit is used as a substrate to be integrated, relates to an electronic device including a flexible patch that can be attached to the skin and a method for manufacturing the same. In particular, the flexible patch used as a circuit board has a plurality of through holes, and thus has high air permeability and strong adhesion.

As life is enriched by industrial and economic development, the majority of modern people have a desire to maintain a younger and more beautiful face and body, not just a desire to lead a healthy life. In order to meet the needs of these modern people, interest in skin-conformable electronic sensing technology (e.g., skin sensors) that allows them to continuously monitor their health, especially skin condition. This is getting higher.

In general, a skin sensor is attached to a subject's skin in order to obtain information about the skin, such as skin changes and conditions. However, the skin is the outermost and largest area of the body's outermost surface organs, which are pores, such as sweat, sebum secretion, and volatile organic emissions, essential for preserving the homeostasis of the body. Various physiological actions based on this are performed. The skin sensor attached to the skin should be manufactured in consideration of the biological properties of the skin.

Therefore, a high-quality skin sensor for monitoring a long-term health condition or skin condition must have both adhesion and breathability as essential requirements.

Conventional skin sensors are manufactured using polymer substrates such as PI or PET, which have low permeability, and when attached to the skin, they block the pores of the skin and interfere with the physiological activity of the skin and prevent inflammation and irritation. Provoking problems have been raised. If the chemical attachment is additionally used for a strong bond between the skin sensor and the skin, there is a possibility that the inflammation becomes more severe. Since the infected skin loses its protective function against the virus, secondary infection or complications may occur. In addition, due to the elastic modulus of the polymer substrate, which is about 1000 times larger than that of the skin, there is a problem that the adhesion to the skin is very low and thus it cannot be attached to the skin for a long time or the re-adhesion efficiency is very low.

In order to overcome this, the development of a skin sensor having a micro structure such as a sucker or a lizard sole is being attempted because the surface of the attachment is an octopus based on an elastomer, such as PDMS, which is similar to the mechanical properties of the skin. It is a non-penetrating structure, present only in the phase. Therefore, the manufacturing process is complicated, and there is a limitation that it is difficult to downsize.

In addition, in manufacturing such an elastomer-based skin sensor, it is difficult to integrate circuit elements of the skin sensor on the elastomer because it is deformable and softer than a commonly used silicon substrate.

According to an aspect of the present invention, it is possible to provide an electronic device including a semiconductor circuit unit composed of circuit components and a flexible patch attachable to the skin, which is used as a substrate on which the semiconductor circuit unit is integrated.

In addition, a method of manufacturing the electronic device can be provided.

An electronic device that can be attached to the skin according to an aspect of the present invention includes: a semiconductor circuit unit, wherein the semiconductor circuit unit includes a circuit element including at least one of an electrode and an interconnect; And a semiconductor device including an insulating layer and an active layer; And it may include a flexible patch configured to be attached to the skin, including a plurality of through-holes. Here, the insulating layer includes a plurality of through holes corresponding to the plurality of through holes of the flexible patch.

In one embodiment, the plurality of through-holes include a circular through-hole, and the distance between the plurality of through-holes may be less than 60 μm.

In one embodiment, the plurality of through-holes may further include through-holes in the form of dumbbells.

In one embodiment, the plurality of through-holes may include a combination of a first through-hole having a first diameter and a second through-hole having a second diameter. Here, the first diameter is larger than the second diameter, and the second through hole may be located around the first through hole.

In one embodiment, the flexible patch may be disposed on the active layer such that a plurality of through holes of the flexible patch and a plurality of through holes of the insulating layer are matched in a plane.

In one embodiment, the active layer may be made of a material containing AlN or GaN.

In one embodiment, the circuit element may include a first electrode and a second electrode located opposite the first electrode. Here, the first electrode includes at least one first bar, the second electrode includes at least one second bar, and the plane of the first bar is a zigzag shape of the first bar, the second The second bar extends toward the electrode, and the plane of the second bar is zigzag, extending toward the first electrode.

In one embodiment, the zigzag shape of the first bar or the second bar may include a hinge pattern located at a point where the extending direction of the bar changes.

In one embodiment, the flexible patch may include a first flexible layer having a first elastic modulus and a second flexible layer having a second elastic modulus. Here, the first elastic modulus may be a value lower than the second elastic modulus.

In one embodiment, the thickness t1 of the first flexible layer and the thickness t2 of the second flexible layer are determined based on the following equation:

[Mathematics]

And t is the thickness of the flexible patch, E1 is the elastic modulus of the first flexible layer, E2 is the elastic modulus of the second flexible layer, R is the curvature of the flexible patch attached to the skin, γ _dSkin is the dispersion component of the skin's contact surface, _dPatch γ represents the distribution of the touch surface of the patch, γ _pSkin is the polar component of the contact surface of the skin, γ _pPatch represents the polarity component of the contact surface of the patch.

A method of manufacturing an electronic device attachable to skin according to another aspect of the present invention includes forming a sacrificial layer on a first substrate; Forming a semiconductor circuit unit including a semiconductor element and a circuit element on the sacrificial layer; Bonding a flexible patch including a plurality of through holes on the semiconductor circuit; And etching the sacrificial layer to manufacture the electronic device including the semiconductor circuit unit and the flexible patch.

In one embodiment, forming the semiconductor circuit unit comprises: forming a circuit element on the sacrificial layer, the circuit element comprising one or more of an electrode and an interconnect; Forming an insulating layer on the circuit element-the insulating layer is formed to have a plurality of through holes corresponding to a plurality of through holes of the flexible patch; And forming an active layer on the insulating layer.

In one embodiment, forming the active layer comprises: forming an active layer on a second substrate; Forming a stresser layer on the active layer; Placing a tape on the stresser layer; Peeling the active layer and the stresser layer from the second substrate using the tape; Transferring a peeled active layer and a stresser layer onto the insulating layer-the peeled active layer is transferred onto the insulating layer; And peeling the stresser layer from the active layer using the tape.

In one embodiment, the stressor layer is made of a plurality of layers,

The step of forming the stressor layer may include forming a first stressor layer on the active layer by evaporating; Forming a second stressor layer on the first stressor layer by sputtering deposition; And forming a third stressor layer on the second stressor layer by sputtering deposition.

In one embodiment, the second stressor layer may be made of a material containing Al, and the third stressor layer may be made of a material containing Ni.

In one embodiment, the first stressor layer may be made of a material containing Ni or AgNi.

In one embodiment, the bonding step may further include applying pressure between the flexible patch and the semiconductor circuit unit.

In one embodiment, a method of manufacturing an electronic device attachable to a skin may further include plasma treatment of the semiconductor circuit unit and the flexible patch prior to bonding.

In one embodiment, in the bonding step, the flexible patch may be disposed on the active layer such that a plurality of through holes of the flexible patch and a plurality of through holes of the insulating layer are matched in a plane.

In one embodiment, the sacrificial layer may be formed of any one of Ni, Cr, Al, and combinations thereof.

In one embodiment, forming the semiconductor circuit unit may include forming an active layer on the sacrificial layer; Forming an insulating layer on the active layer; And forming a circuit element on the insulating layer, wherein the circuit element includes one or more of an electrode and an interconnect.

A method of manufacturing an electronic device attachable to skin according to another aspect of the present invention includes forming a sacrificial layer on a first substrate; Forming a semiconductor circuit unit including a circuit element and a semiconductor element on the sacrificial layer; Forming a flexible patch layer on the semiconductor circuit unit; A step of contacting a mold including a groove to form a plurality of through holes to a flexible patch layer-a mold portion excluding the groove penetrates the flexible patch layer; And etching the sacrificial layer to manufacture an electronic device.

In one embodiment, forming the semiconductor circuit unit on the sacrificial layer comprises: forming a circuit element on the sacrificial layer, the circuit element comprising one or more of an electrode and an interconnect; Forming an insulating layer on the circuit element, wherein the insulating layer includes a plurality of through holes corresponding to a plurality of through holes of the flexible patch layer formed by the mold; And forming an active layer on the insulating layer.

In one embodiment, forming the semiconductor circuit unit on the sacrificial layer may include forming an active layer on the sacrificial layer; Forming an insulating layer on the active layer, wherein the insulating layer includes a plurality of through holes corresponding to a plurality of through holes of the flexible patch layer formed by the mold; And forming a circuit element on the insulating layer, wherein the circuit element includes one or more of an electrode and an interconnect.

In one embodiment, a method of manufacturing an electronic device attachable to a skin includes forming a polyamide layer on the sacrificial layer before forming an active layer; And after contacting the mold to the flexible patch layer, removing the polyamide layer.

In one embodiment, forming the active layer may include forming the active layer on the polyamide layer using a transfer structure.

In one embodiment, a method of manufacturing an electronic device attachable to a skin may further include patterning the active layer such that the width of the active layer is smaller than the width of a through hole to be formed by the mold.

In one embodiment, the step of contacting the mold including the plurality of grooves with the flexible patch layer may include heating the flexible patch layer.

In one embodiment, a groove capable of forming a plurality of circular through-holes and a plurality of dumbbell-shaped through-holes and a combination thereof may be formed on the surface of the mold.

In one embodiment, a groove capable of forming a plurality of circular through-holes and a plurality of dumbbell-shaped through-holes may be formed on the surface of the mold.

In one embodiment, a method of manufacturing an electronic device attachable to a skin may further include forming one or more alignment keys for alignment of a penetrating mold. Here, the arrangement key is configured to have a height, and the mold further includes one or more key holes corresponding to the plane of the arrangement key.

In one embodiment, the width of the groove forming the through hole may be less than 60 μm.

In one embodiment, forming the flexible patch layer may include: forming a third flexible layer having a third elastic modulus on the semiconductor circuit unit; And forming a fourth flexible layer having a fourth elastic modulus on the third flexible layer. Here, the fourth elastic modulus has a lower value than the third elastic modulus.

An electronic device manufacturing method according to an aspect of the present invention may manufacture electronic devices by bonding semiconductor circuit units including various circuit elements and semiconductor elements, such as electrodes and interconnects, on a flexible patch configured to be attached to skin.

In particular, an electronic device in which circuit elements and semiconductor elements are disposed on a flexible patch can be manufactured. Patches that must adhere to the skin's surface should be flexible. The present invention can solve a problem that occurs when a circuit element and/or a semiconductor element is directly integrated on a flexible patch through a reverse process of integrating a semiconductor circuit in reverse order.

The flexible patch of such an electronic device may include a plurality of through-holes and have high air permeability and strong adhesion. Due to this, even if the electronic device is worn on the skin, it does not affect the skin condition.

Further, the plurality of through-holes may be configured to have different sizes in order to maximize the function of the semiconductor circuit disposed on the flexible patch.

In one embodiment, when the semiconductor device of the electronic device includes a piezoelectric material, the electronic device may be used as a skin sensor that can be attached to the skin to obtain skin deformation and/or elasticity information. The piezoelectric material for which deformation is detected is disposed on a relatively large through hole, so that the skin sensor can more effectively obtain skin deformation information due to the physiological behavior of the skin.

In another embodiment, when the semiconductor device of the electronic device is configured to respond to light, the electronic device may be used as an optical sensor or image sensor for a skin surface.

In another embodiment, when the semiconductor device of the electronic device is configured to respond to moisture, the electronic device may be used as a moisture sensor for measuring moisture loss in the skin.

BRIEF DESCRIPTION OF DRAWINGS To describe the technical solutions in the embodiments of the present invention or in the prior art more clearly, the drawings required in the description of the embodiments are briefly introduced below. The same reference numbers are used to identify similar elements shown in one or more drawings. It should be understood that the drawings below are for the purpose of describing the embodiments of the present specification and not for the purpose of limitation. In addition, some elements to which various modifications such as exaggeration and omission are applied may be illustrated in the drawings below for clarity.

1A to 1C are diagrams schematically illustrating electronic devices attached to a subject's skin according to embodiments of the present invention.

2A to 2C are diagrams for explaining the operating principle of the skin sensor according to an embodiment of the present invention.

3 is a graph showing skin strain over time, measured by a skin sensor, according to an embodiment of the present invention.

4A to 4B are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a first embodiment of the present invention.

5A to 5C are cross-sectional views illustrating a process of preparing a semiconductor structure in which an active layer is formed in the manufacturing process of the skin sensor 1 according to the first embodiment of the present invention.

6A to 6E are diagrams for explaining an electrode and/or interconnect structure configured to have oxetic properties according to an embodiment of the present invention.

7 is a view for explaining a transfer structure according to an embodiment of the present invention.

8 is a view schematically showing a manufacturing process of the flexible patch 30 according to an embodiment of the present invention.

9A to 9D are diagrams for explaining a flexible patch formed by a mold according to embodiments of the present invention.

10A to 10D are diagrams for explaining adhesion of a flexible patch attached to skin according to an embodiment of the present invention.

11A to 11B are conceptual views schematically showing a manufacturing process of a skin sensor according to a second embodiment of the present invention.

12A to 12H are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a third embodiment of the present invention.

13A to 13K are conceptual views schematically illustrating a manufacturing process of a skin sensor according to a fourth embodiment of the present invention.

Terms such as first, second and third are used to describe various parts, components, regions, layers and/or sections, but are not limited thereto. These terms are only used to distinguish one part, component, region, layer or section from another part, component, region, layer or section. Accordingly, a first portion, component, region, layer or section described below may be referred to as a second portion, component, region, layer or section without departing from the scope of the present invention.

The terminology used herein is only to refer to a specific embodiment and is not intended to limit the invention. The singular forms used herein also include plural forms unless the phrases clearly indicate the opposite. As used herein, the meaning of “comprising” embodies a particular property, region, integer, step, action, element, and/or component, and the presence or presence of another property, region, integer, step, action, element, and/or component. It does not exclude addition.

Terms referring to relative spaces such as "below", "above", etc. may be used to more easily describe the relationship of one part to another part shown in the drawings. These terms are intended to include other meanings or actions of the device in use with the meanings intended in the drawings. For example, if the device in the figure is turned over, some parts described as being "below" other parts are described as being "above" other parts. Thus, the exemplary term “below” includes both the up and down directions. The device can be rotated 90° or rotated at different angles, and terms indicating relative space are also construed accordingly.

Although not defined differently, all terms including technical terms and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present invention pertains. Commonly used dictionary-defined terms are additionally interpreted as having meanings consistent with related technical documents and currently disclosed contents, and are not interpreted as ideal or very formal meanings unless defined.

In the present specification, the electronic device attachable to the skin includes a substrate attachable to the skin; And a semiconductor circuit unit integrated on the substrate. The semiconductor circuit unit includes an active layer; It includes a semiconductor device including an insulating layer, and circuit connection components such as electrodes and/or interconnects, and operates as circuits that perform functions of electronic devices. The electronic device may be configured to operate by itself or electrically connected to an external device. In one embodiment, the electronic device attachable to the skin may be a skin sensor capable of obtaining information of the attached skin. However, the description related to the electronic device attachable to the skin of the present invention is not limited to the skin sensor. According to embodiments of the present invention, an electronic device (eg, a light emitter) operating with a function other than a sensor and the same can be manufactured.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Referring to FIG. 1A, the electronic device 1 according to embodiments of the present invention may be attached to a subject's skin.

In one embodiment, the electronic device 1 is a semiconductor circuit unit 10 that operates to perform a function of a sensor, and a substrate on which the semiconductor circuit unit 10 is integrated, and includes a flexible patch 30 that can be attached to the skin. Includes.

The semiconductor circuit unit 10 is composed of semiconductor elements including semiconductor materials, and circuit components such as electrodes and/or interconnection components (eg, interconnects, etc.).

The function of the semiconductor circuit unit 10 depends on the semiconductor element and/or circuit component. In one embodiment, when the active layer of the semiconductor circuit unit 10 is made of a piezoelectric material, the semiconductor circuit unit 10 operates as a piezoelectric element circuit in which characteristics of a current change according to a change in shape of the active layer, and the semiconductor circuit unit ( The electronic device 1 including 10) may operate as a skin deformation sensor that obtains skin deformation information and, further, elasticity information. In this way, when the electronic device 1 includes a component made of a piezoelectric material, the semiconductor circuit unit 10 operates as a change detection structure. This will be described in more detail with reference to FIGS. 2 and 3 below.

Alternatively, when the semiconductor circuit unit 10 includes a material that responds to changes in light, the electronic device 1 may operate as a skin optical sensor or a skin image sensor.

Alternatively, when the semiconductor circuit unit 10 includes a material that responds to a change in moisture, the electronic device 1 may operate as a skin moisture sensor.

Alternatively, when the semiconductor circuit unit 10 includes a light-emitting material, the electronic device 1 may operate as a skin light-emitting massager.

Hereinafter, for clarity of description, the semiconductor circuit unit 10 will be described as an example of a sensor circuit unit that can detect deformation of the skin, including a piezoelectric material (hereinafter, the semiconductor circuit unit 10 is sometimes referred to as a sensor unit circuit). (Referred to as (10)), describing the electronic device 1 as an example of a skin sensor including the sensor unit circuit 10 (hereinafter, the electronic device 1 is sometimes referred to as a skin sensor 1). The invention is described by way of example.

According to embodiments of the present invention, it is possible to manufacture a skin sensor 1 that can be attached to the skin. The skin sensor 1 may be configured to be attached to the skin and obtain information about the skin.

The skin sensor 1 according to an embodiment includes a flexible patch 30 in which a plurality of air permeable through holes H are formed and a sensor circuit unit 10 bonded to the flexible patch 30.

The flexible patch 30 is a substrate on which the semiconductor circuit unit 10 is integrated, and is configured such that at least one surface has a viscosity that can be attached to the skin. In addition, the flexible patch 30 is configured to have high air permeability and strong adhesion, including a plurality of through holes. This will be described in more detail with reference to FIGS. 2 and 3 below.

The skin sensor 1 is formed in a free standing shape on the breathable through hole H. In one embodiment, as shown in Figure 1a, the active layer of the skin sensor unit 10 is composed of a free standing type structure positioned on a through hole. Since the active layer, which is a piezoelectric material, hangs freely in a through hole for skin breathability, it is possible to efficiently measure the change in the through hole due to skin deformation. That is, the active layer of the skin sensor 1 can be bent effectively according to skin deformation induced by mechanical stress.

The skin sensor 1 comprises a sensor circuit unit 10 disposed on a flexible patch 30, which sensor circuit unit 10 is a circuit component (eg, electrode 111 and/or interconnect 112). ), an insulating layer 113 and an active layer 115.

In some embodiments, sensor circuit unit 10 may include circuit components (eg, electrodes 111 and/or interconnects 112) disposed on flexible patch 30, as shown in FIGS. 1B-1C, It includes an insulating layer 113 disposed on the circuit component, and an active layer 115 disposed on the insulating layer 113. The

components

111, 112, 113, and 115 disposed on the flexible patch 30 may be configured to have through holes corresponding to at least one of the through holes of the flexible patch 30. For this reason, the electronic device 1 can have strong adhesion, and high air permeability can be secured.

In some other embodiments, the sensor circuit unit 10 is disposed on the active layer 115 disposed on the flexible patch 30, the insulating layer 113 disposed on the active layer 115, and the insulating layer 113 Circuit components. The operating principle of the skin sensor 1 will be described in more detail with reference to FIG. 2 below.

The skin sensor 1 may include one or more semiconductor circuit units 10. The semiconductor circuit unit 10 may be configured to perform the same function, or may be configured to perform different individual functions.

The skin sensor 1 has a variety of information about the skin of the skin holder (eg, skin elasticity information, skin deformation) while the semiconductor circuit is attached to the skin through a flexible patch while minimizing the effect on the skin of the skin holder even when attached for a long time. Information, etc.).

2A to 2C are diagrams for explaining the operating principle of the skin sensor 1 according to an embodiment of the present invention.

2A to 2C, the skin sensor 1 according to an embodiment of the present invention may be detachably attached to the skin Ts and Td. The skin includes a stratum corneum (Ts) and a dermal layer (Td). The skin sensor 1 is in close contact with the surface of the stratum corneum Ts. The mechanical change of the skin causes a change in the through hole H. Therefore, if the change in the through hole H can be measured, information on the mechanical change of the skin can be obtained.

The mechanical changes of the skin can be analyzed based on the mechanism of the skin membrane. The skin consists of a stratum corneum up to approximately 20 μm, and an epidermal and dermal layer up to approximately 2 mm. Accordingly, when the dermal layer is viewed as a substrate, the stratum corneum has a thin film structure at a ratio of approximately 1/100 to the dermal layer. Accordingly, when the skin is dried, the volume shrinkage of the stratum corneum layer, which is relatively thin, is induced.

And, when drying occurs, initially, the moisture of the stratum corneum layer decreases and contracts, but the dermal layer is relatively less dried, so that the dermal layer pulls the stratum corneum, thereby causing tensile stress. However, when the drying occurs continuously, the elastic modulus of the stratum corneum increases, and a crack occurs in the stratum corneum Ts, resulting in a loss of the protective function. In addition, when cracking occurs, tensile stress decreases and stretches.

The skin sensor 1 is attached to the through hole H in a free standing type to detect a change in pressure by detecting a change in pressure applied to the change detection structure according to a change in size of the through hole H attached to the skin It can be configured to.

In this specification, the rate of skin change may be defined as the following [Equation 1] for the initial length L0 and the length Lt of the skin in a predetermined region.

That is, by calculating the change in length of the change sensing structure (ie, the active layer 115), the rate of skin change can be provided as a quantitative value.

The situation (a) of FIG. 2A shows a case where no pressure is applied due to no skin change. In the situation (a) of FIG. 2, the through hole may have a length of d3.

The situation (b) of FIG. 2B shows a case in which substances containing moisture are released from the skin over time. In the situation (b) of Figure 2b, when the material containing moisture is released from the skin over time and the stratum corneum is dried first, tensile stresses (F5, F6) are generated in the stratum corneum. Due to this, the size of the through hole increases, and tensile stress is applied to the portion of the active layer 115 disposed on the through hole. The through hole may have a length of d4. d4 has a longer length than d3. As the portion of the active layer 115 disposed on the through hole changes according to the change of the through hole, a current change occurs. And, in this case, it can be determined that the subject's skin pulling occurred.

The situation (c) of FIG. 2c represents a case where drying continuously occurs. If the drying occurs continuously, cracks (C) are generated in the stratum corneum, and the size of the through hole decreases compared to the situation (b). Therefore, the tensile stress applied to the active layer 115 disposed on the through-hole decreases, and in this case, may have a length of d5. d5 has a shorter length than d4.

In the above manner, the amount of skin change can be measured according to the pressure applied to the active layer 115 disposed on the through-hole.

The situation (a) of FIG. 2A corresponds to the exposure start time in the graph of FIG. 3. When the drying of the skin begins, in the condition (b) of FIG. 2B, the tensile stress increases with drying of the stratum corneum, and the skin deformation continuously increases.

Then, in the situation (c) of FIG. 2C in which the stratum corneum is formed, the tensile stress decreases again as the cracks are formed in the stratum corneum, so that the deformation returns to the same state as or similar to the initial state.

In the skin sensor 1 attached to the skin surface, the sensor circuit unit 10 operating as a sensor is located on the flexible patch 30. That is, the flexible patch 30 is used as a substrate on which the circuit is integrated. Unlike the commonly used circuit boards, the flexible patch 30 is soft and sticky. Therefore, it is difficult to manufacture the skin sensor 1 of the present invention by simply sequentially integrating circuit components on a substrate.

4A and 4B, a method for manufacturing a skin sensor 1 according to a first embodiment of the present invention includes forming a sacrificial layer 105 on a substrate 101 (S401); Forming a sensor circuit unit 10 on the sacrificial layer 105 (S410), forming an electrode 111 and/or interconnect 112 on the sacrificial layer 105 (S411); Forming an insulating layer 113 on the electrode and/or interconnect (S413); And forming an active layer 115 on the insulating layer 113 (S415); Bonding the sensor circuit unit 10 (ie, the active layer 115) and a flexible patch 30 (S430 ); And etching the sacrificial layer 105 to manufacture the skin sensor 1 (S450).

The substrate 101 (or referred to as the first substrate) is used to stack the inner layers of the sensor circuit unit 10. That is, the substrate 101 is a substrate used to form components of the sensor circuit unit 10, such as the electrode 111 and/or the interconnect 112, the active layer 115, and the like. In one example, the substrate 101 is made of silicon (Si), and a sacrificial layer 105 may be formed on the substrate 101 (S401).

On the other hand, the sacrificial layer 105 is made of a material (for example, metal) that is resistant to organic solvents and capable of photo-lithography. In one embodiment, the sacrificial layer 105 may be made of a material including one or more of Cr, Al, Ni, Au, and combinations thereof.

In addition, the sacrificial layer 105 is one material property related to adhesion (e.g., standard oxidation potential) and/or other material properties related to thermal stability (e.g., melting temperature). ). In this case, the sacrificial layer 105 may have strong adhesion and thermal stability sufficient to withstand various strains. In some embodiments, the sacrificial layer 105 may be made of a material including one or more of Cr, Al, Ni, and combinations thereof.

A semiconductor structure operating as a sensor circuit unit 10 is formed on the sacrificial layer 105.

Referring to FIG. 5A, a conductive layer including an electrode 111 and/or an interconnect 112 is formed on the sacrificial layer 105 (S411 ). The electrode 111 and/or the interconnect 112 are circuit components made of a conductive material (eg, gold (Au), platinum (Pt)), and are skinned by transmitting a current change based on an active layer functioning as a piezoelectric element. The sensor 1 is operated.

The skin sensor 1 is configured to be deformable according to the skin surface, and is also configured to have strong durability despite excessive deformation of the skin sensor 1 in the de-attachment process. Accordingly, the electrode 111 and/or the interconnect 112 are formed to have a structure resistant to deformation.

In one embodiment, the electrode 111 and/or the interconnect 112 is formed on the sacrificial layer 105 in a planar structure in which oxetic characteristics can be implemented (S411).

The auxetic structure generally refers to a structure in which its dimension increases in a direction orthogonal to the first direction when a tensile force is applied in the first direction. For example, if the oxetic structure can be described as having a length, width and thickness, when the oxetic structure is subjected to a tensile force in the longitudinal direction, the width is increased. In addition, the length and width are increased when the oxetic structure is stretched in the longitudinal direction, and the width and length are increased when stretched in the transverse direction, but the thickness is not bidirectional. This oxetic structure is characterized by having a negative Poisson's ratio.

In step S411, the first electrode 111A and the second electrode 111B are formed on the sacrificial layer 105. Referring to FIG. 6A, the first electrode and the

second electrode

111A and 111B include one or more bars. The bar included in the first electrode 111A has a zigzag shape in a plane, and extends to the second electrode 111B on the opposite side. Also included in the second electrode 111B, the plane is also in a zigzag shape, and extends to the first electrode 111A on the opposite side. Each of the

electrodes

111A and 111B includes a zigzag bar, and thus may have characteristics generated by an oxetic structure (ie, oxetic structure characteristics).

Referring to FIG. 6B, in one embodiment, the bar may be configured to have a circular cut hinge pattern at a point at which the extension direction of the bar changes. The white paper pattern can prevent crack propaganda.

As shown in Figure 6c, the interconnect 112 is configured to form a dumbbell-shaped hole, which has a circular shape at both ends and a central portion connecting the circles at both ends, with a pillar having a thickness smaller than the diameter of both ends. Further, the interconnect 112 is configured to form a circular hole (D-mbbell-hole pattern). The interconnect 112 in which the through hole is formed may have characteristics generated by an oxetic structure (that is, oxetic structure characteristics).

Due to the oxetic structure characteristics, the occurrence of cracks at both ends is minimized even if the shape of the interconnect 112 is deformed by an external force acting on the interconnect 112. Referring to FIG. 6D, it can be confirmed that the crack-producing portion is smaller when it has a through hole in the form of a dumbbell.

The electrode 111 and/or interconnect 112 having such an oxetic structural property may be formed on the sacrificial layer 105 in various ways. In one example, the electrode 111 and/or interconnect 112 is formed in a photolithography-based etching process using a mask (eg, as shown in FIG. 6E) configured to form an oxic structure after forming the conductive layer. It can be formed by. In the mask of FIG. 6E, the conductive layer region corresponding to the dark portion is formed as an interconnect, and the conductive layer region corresponding to the bright portion is formed as a through hole.

Referring to FIG. 5B, after forming the electrode 111 and/or the interconnect 112, an insulating layer 113 is formed (S413). The insulating layer 113 may be an oxide layer (SiO2) formed on the surface of the silicon (Si) substrate 110. However, this is an example, and the insulating layer 113 may be made of an oxide material other than silicon oxide.

In one embodiment, the insulating layer 113 may include a plurality of through holes to ensure air permeability. The through hole of the insulating layer 113 is formed to match the through hole of the flexible patch 30 so as not to interfere with the flow of air moving through the through hole of the flexible patch 30. Due to this, the breathability of the skin sensor 1 is maximized. In some embodiments, the through hole of the insulating layer 113 may be formed by a photolithography-based etching process.

Referring to Figure 5c, the active layer 115 may be formed on the insulating layer 113 (S415). The process of forming the active layer 115 and the active layer 115 will be described in more detail with reference to FIG. 7 below.

7 is a view for explaining a transfer structure according to an embodiment of the present invention. In one embodiment, the active layer 115 may be formed on the insulating layer 113 by being transferred by a transfer structure (S415).

Referring to FIG. 7, the transfer structure is a structure formed on the substrate 701, and includes a metal layer 710 formed on the substrate 701; An active layer 115 formed on the metal layer 710; A stresser layer 730 formed on the active layer 115; And a tape layer 750 disposed on the stresser layer 730.

The substrate 701 (or referred to as a second substrate) is a substrate used to form a transfer structure, and is a substrate different from the substrate 101. The active layer 115 is formed on the substrate 701. In one example, the substrate 701 may be made of a material including silicon (Si).

In one embodiment, the active layer 115 may be formed on the metal layer 710 formed on the substrate 701. The metal layer 710 is configured to have weak adhesion so that the active layer 115 is more easily transferred. In one example, the metal layer 710 may be made of a material including gold (Au).

The active layer 115 is a layer made of a material having semiconductor properties and performs a main function of the electronic device 1 that can be attached to the skin. When the electronic device 1 that can be attached to the skin is used as a skin sensor, in one embodiment, the active layer 115 has excellent electron transport properties and may be made of a material including Ga and Al that can be used as a piezoelectric material. have. For example, the active layer 115 may be made of AlN or GaN-containing material.

The stresser layer 730 enhances the semiconductor characteristics by applying a deformation to the material of the active layer 115. For example, the piezoelectric performance may be enhanced by the stressor layer 730. In addition, the active layer 115 is configured to minimize the formation of cracks in the process of being transferred on the insulating layer 113. To this end, the stresser layer 730 may be formed of a multi-layer structure including a plurality of layers having various materials and various thicknesses.

In one embodiment, the stressor layer 730 includes three layers 731-735. The first stressor layer 731 may be a high-stress metal layer made of a material containing Ni (eg, Ni, or AgNi, etc.). The second stressor layer 733 may be made of a material containing Al. The third stressor layer 735 may be made of a material containing Ag.

The thickness of the first stressor layer 731 may be formed differently depending on the material. For example, when the first stressor layer 731 is made of Ni, the thickness of the first stressor layer 731 may be 50 nm. Meanwhile, when the first stressor layer 731 is made of AgNi, the thickness of the first stressor layer 731 may be 70 nm.

The formation method may be the same for each stressor layer, or it may be different. In one example, the first stressor layer 731 formed on the active layer 115 may be formed by evaporating. The second stressor layer 733 formed on the first stressor layer 731 and the third stressor layer 735 formed on the second stressor layer 735 may be formed by sputtering deposition. The formation speed of each stressor layer may be different from each other. In one example, the second stressor layer 733 may be 1.8 1.8 ^-1 and the third stresser layer 735 may be 2 Ås ^-1 . In another example, the second stressor layer 733 may be formed of 0.4 Ås ^-1 , and the third stresser layer 735 may be formed of 2 Ås ^-1 .

The transfer structure of FIG. 7 is peeled from the substrate 701 by the tape layer 750, and the peeled active layer 115 is transferred on the insulating layer 113. Thereafter, the tape layer 750 and the stressor layer 730 are removed, and a conductive layer including the substrate 101, the sacrificial layer 105, the electrode 111, and/or the interconnect 112; A laminate including the insulating layer 113 and the active layer 115 is formed.

In one embodiment, the transfer of the active layer 115 using the transfer structure of FIG. 5 may be performed within a range of approximately 165°C. In this case, the amount of tape residue on the active layer 115 is minimized.

As such, the active layer 115 made of high performance, single crystal piezoelectric semiconductor materials (AlN, GaN) may be transferred on the insulating layer 113 using 2D material based layer transfer (2DLT). .

Referring to FIG. 4 again, the flexible patch 30, which is a component attached to the skin, is disposed on the active layer 115 of the semiconductor structure, and the disposed flexible patch 30 is bonded to the active layer 115 (S430). .

Referring to FIG. 8, a method of manufacturing the flexible patch 30 includes forming a sacrificial layer on a mold having a plurality of concave grooves formed on one surface (S810); And forming a flexible patch layer on the sacrificial layer (S830).

For rigid materials, a wet/dry etch method is used to form a geometric planar structure such as a micro-hole patterned surface, as shown in FIGS. 1A and 1B. However, a relatively soft flexible material (eg, PDMS, etc.) has a problem in that a shape that forms a geometric planar structure such as a hole is damaged when a dry/wet etch method is used to form the geometric planar structure. However, in order to form a plurality of holes on one surface of the flexible material, when using a mold 810 in which a plurality of concave grooves are formed, it is possible to obtain a flexible patch layer 830 whose hole shape is not broken.

The mold 810 is configured such that the groove is formed on one surface to have a geometric plane. The cross section of the groove forming the geometric plane of the form 810 is concavely formed into one surface, as shown in FIG. 8. When any material having fluidity (for example, including a flexible material used to form the flexible patch layer 830) is formed on the mold 810, the optional material fills the groove. When the optional material is cured, a height structure corresponding to the filled groove is formed inside the groove. The groove may be configured to have a single step, or may be configured to have one or more steps.

The flexible patch layer 830 includes a layer of a material that can be attached to the skin. Therefore, when the flexible patch layer 830 is directly formed on the mold 810, it is difficult to separate the flexible patch layer 830 from the mold 810, and in this process, the flexible patch layer 830 is damaged. When it occurs, there is a fear that the quality of the flexible patch 30 is impaired. To overcome this, prior to filling the grooves of the mold 810 with a flexible material, a sacrificial layer having an anti-sticky layer function preventing adhesion between the flexible patch layer 830 and the mold 810 820 is formed between the mold 810 and the flexible patch layer 830 (S810). By using the sacrificial layer 820, the flexible patch layer 830 can be separated from the mold 810 without damage, thereby obtaining a high-quality flexible patch 30.

The mold 810 is not etched by an etching solution, and can maintain its shape even when a certain heat is applied, and is configured to have a certain hardness. In addition, the mold 810 is made of a non-magnetic material. In one example, it may be made of a material containing silicon (Si), but is not limited to this, and is not removed by a material that removes the sacrificial layer 820 below, and can maintain its shape even above a certain temperature, and mold making It can be made of various materials that are not difficult.

9A to 9D are diagrams for explaining a structure of a mold and a plurality of through-holes of a flexible patch formed according to the mold according to embodiments of the present invention.

The mold 810 has a shape and distribution of grooves, which allows holes to be formed with excellent characteristics of the flexible patch 30, such as breathability and adhesion.

In one embodiment, the grooves formed on the surface of the mold 810 may be configured to form a plurality of circular through-hole patterns. For example, in order to form a plurality of holes in the flexible patch 30, a mold 810 in which a groove having a circular rim is formed may be used. Using the mold 810 of FIG. 9A, it is possible to obtain a flexible patch 30 including a through hole having a plane of FIG. 9B.

In some embodiments, the grooves formed in the mold 810 may be distributed such that the gap between the holes of the flexible patch 30 is less than 60 μm. For example, the width of the groove may be less than 60 μm. Sweat pores have a variety of sizes depending on the skin location. For example, the area of the pores has a diameter of 60 μm or more, and is known to have an average diameter of 80 μm. In addition, since the biological functions performed by sweat, such as the amount of wastes to be discharged and the temperature control, are different depending on the skin position, they are arranged at different distribution densities depending on body parts. For example, the pores are such parts are distributed at a density of 60cm ^-2, the palm 400 cm ^-2, and the forehead 180 cm ^-2.

Based on the size and area information of the pores, the gap between the holes of the flexible patch 30 should be less than 60 μm. When the distance between the holes is 60 μm or more, the surface of the flexible patch 30 other than the hole may block the sweat hole. Accordingly, the flexible patch 30 having a gap between holes of less than 60 μm can obtain higher air permeability (eg, almost 100% air permeability). In some embodiments, the flexible patch 30 may be manufactured using a mold 10 that has a through-hole pattern with a gap between holes of 50 μm.

The main factor to achieve high breathability is the spacing between through holes. The size of the through hole affects both adhesion and breathability. This is because the larger the size of the through hole, the larger the area of the skin in contact with the air, but the volume of the skin to be collected decreases. In embodiments of the present invention, even if the size of the through hole is small, by reducing the distance between the through holes, high air permeability and strong adhesion can be obtained. The size of the through hole can be variously set within a range that does not impair adhesion.

In addition, the groove of the surface of the mold 810 is formed in consideration of the design of the semiconductor circuit to be integrated on the flexible patch 30. In some embodiments, a groove formed on the surface of the mold 810 forms a plurality of circular hole patterns, while the circular hole pattern surrounds one circular hole having a relatively large diameter, and the circular hole And a combination of a plurality of circular holes having a smaller diameter.

For example, when a part of a piezoelectric element is disposed on a through hole on the flexible patch 30, and a circuit component is disposed to measure and transmit a current change according to the deformation of the piezoelectric element, the piezoelectric that undergoes major deformation The element portion may be set to form a through hole having a relatively size, and the remaining portion may form a through hole having a relatively small size. In this case, only a small number of through-holes in which the piezoelectric elements are disposed are large in size, and the remaining through-holes that occupy most of the flexible patch 30 have a small enough size to capture the skin, and thus still have strong adhesion.

In addition, the flexible patch 30 may be formed to have characteristics (ie, oxetic structure characteristics) generated by oxetic structures. For example, the groove of the mold 810 may be configured to form a circular through-hole in the flexible patch 30, and may also be configured to form a through-hole having a flat shape of a dumbbell.

Specifically, when both ends are circular and the center connecting the circles at both ends is formed of a pillar having a thickness smaller than the diameter of both ends, when a hole in the form of a dumbbell and a circular hole are formed in the flexible patch 30, (ie, a dumbbell-hole When a through-hole of a pattern (Dμmbbell-hole pattern) is formed) The flexible patch 30 having such a through-hole may have an oxetic structure characteristic. That is, the mold 810 is composed of a structure in which a column surrounding the empty space in the form of a circle and/or dumbbell is formed. If the mold 810 of FIG. 9C is used, a flexible patch 30 including a through hole having a plane of FIG. 9D can be obtained.

In one embodiment, the spacing between holes can be formed to less than 60 μm as described above to obtain high breathability. In one example, as shown in Figure 9c, the distance between the center of the connection portion of one dumbbell through hole (H _C ) and one end of the other dumbbell through hole (H _C ) is 35μm, one dumbbell through hole ( The distance between one end of H _C ) and the other round through hole H _B may be 25 μm. In addition, the diameter of the circular through hole (H _B ) may be 50 μm, and the internal spacing of one end of the dumbbell through hole (H _C ) may be 100 μm. However, this is merely exemplary, and may be variously set based on the breathability, adhesion, and durability of the flexible patch 30.

The sacrificial layer 820 may be formed on the mold 810 of FIG. 9A by a spin coating method.

However, when the spin coating method is applied to form the sacrificial layer 820 on the mold 810 of FIG. 9C, the PDMS patch layer 830 cannot be separated from the mold 810 of FIG. 9C, for example, 60 μm It is not possible to manufacture the flexible patch 30 having holes formed at intervals of tens of micro units (such as spacing). The mold 810 of FIG. 9C is configured to form a through hole in a circular and dumbbell form, so that the contact area between the mold 810 and the PDMS patch layer 830 is compared to the embodiment using the mold 810 of FIG. 9A. This is because the PMMA spin coating becomes unbalanced because the gap between the grooves in the mold 810 of FIG. 9C is narrowed.

When the sacrificial layer 820 is formed on the mold 810 as shown in FIG. 9C, the sacrificial layer 820 is formed on the mold 810 of FIG. 9C using a vaporization coating method (S130 ). In one example, the vaporization coating method may be self-assembled monolayers (SAMs).

By this process, the sacrificial layer 820 and the flexible patch layer 830 may be formed on the mold 810 having a geometric plane associated with the oxetic structural properties. (S810, S830) Thereafter, after removing the portion of the flexible patch layer 830 exceeding the groove (S850), the sacrificial layer 820 is etched to obtain a flexible patch 30 having a geometric plane having oxetic structure characteristics. Can be obtained.

The flexible patch 30 of FIG. 9D manufactured using the mold 810 of FIG. 9C causes a moisture change of about 6% when comparing the amount of skin moisture change before and after attachment. That is, even if the flexible patch 30 is attached, almost no moisture loss occurs in the skin.

Referring back to FIG. 8, the sacrificial layer 820 is made of a material usable for manufacturing a semiconductor device of nano- to micro-units. In one embodiment, the sacrificial layer 820 is made of a material including poly(methyl methacrylate) (PMMA). However, the present invention is not limited thereto, and the sacrificial layer 820 may be made of a material including a polymer or the like.

In one embodiment, the sacrificial layer 820 is formed on one surface of the mold 810 having a concave groove by a spin coating method (S810). The thickness of the sacrificial layer 820 can be prevented from being attached between the mold 810 and the flexible patch layer 830, and is formed to a thickness that can be easily removed by the etching solution in step S870.

The flexible patch layer 830 is made of a material having a flexible property to be adhered to the skin while having a flexible property so that a conformable contact in which the patch shape is deformable according to the contour of the skin. In one embodiment, the flexible patch layer 830 may be made of an elastomer having similar mechanical properties to skin. In one example, the flexible patch layer 830 may be made of a material including poly-dimethylsiloxane (PDMS).

In some embodiments, the flexible patch layer 830 may be formed to have a certain thickness. If the thickness of the flexible patch layer 830 is too thin, it may not be possible to obtain a durability that can be repeatedly applied to the skin multiple times. In one example, the flexible patch layer 830 may be formed to have a thickness of 75 μm or more.

In step S830 in which the flexible patch layer 830 is formed on the sacrificial layer 820, a flexible material (eg, PDMS) constituting the flexible patch layer 830 fills the inside of the groove. The flexible material may fill the grooves and further overflow from inside the grooves. As described above, when more flexible material is supplied than the volume inside the groove and the flexible material overflows outside the groove, a part of the flexible patch layer 830 may be formed at a position higher than the surface of the mold 810.

Structures comprising a mold 810, a sacrificial layer 820 and a flexible patch layer 830, obtained by filling or overflowing a flexible material into a groove, for example, casting a mold into a mold prior to completing the casting It is similar to the structure of the state. Hereinafter, a casting-frame structure, which is often used in the present specification for the understanding of a person skilled in the art, is a flexible material filled in a groove (or filled to overflow a groove), as shown in step S830 of FIG. 8, It refers to a structure including a mold 810, a sacrificial layer 820, and a flexible material, and the hardness of the flexible material may be soft or hard.

After the flexible patch layer 830 is formed, the flexible patch layer 830 exceeding the groove (ie, formed at a position higher than the surface of the mold 810) is removed (S850 ). In one embodiment, the plate 850 is brought into contact with a portion of the flexible patch layer 830 (ie, the excess surface) that exceeds the groove of the mold 810, and the plate 850 and/or flexible patch layer 830 ( That is, the part exceeding the groove is removed by rubbing the casting-frame structure).

The plate 850 serves as a plastering board, which pushes and removes the excess portion of the flexible material. In one embodiment, plate 850 includes substrate 851 and sacrificial layer 852 formed on substrate 851. The substrate 851 may have a structure suitable for performing a rubbing function (eg, a flat structure), and durability, and strength. In addition, the substrate 851 may be made of a non-magnetic material. In one example, the substrate 851 may be made of a material including silicon (Si).

The sacrificial layer 852 may be formed of a material that can be etched by an etching solution in step S870. In one example, the sacrificial layer 852 may include the same material as the sacrificial layer 820 (eg, PMMA). However, the present invention is not limited thereto, and may be etched by an etching solution in step S870, and is generated on the surface of the flexible patch layer 830 after removal in the process of rubbing contact with a portion of the flexible patch layer 830 exceeding the groove. It may be made of a material that minimizes possible damage.

In one embodiment, the sacrificial layer 852 may be formed on the substrate 851 by a spin coating method, but is not limited thereto, and may be formed on the substrate 851 by various coating methods.

The rubbing process of step S850 may further include an additional process to more effectively remove excess parts.

In one embodiment, step S850 may include heating a contact portion between the flexible patch layer 830 and the plate 850. For example, by applying a heat of 70° C. or more to the contact portion between the flexible patch layer 830 and the plate 850, the flexible material in a portion exceeding the groove of the mold can be more efficiently removed.

When heat is applied to the flexible patch layer 830 or the contact portion, the strength of the contact portion is weakened (ie, has a soft structure state). Due to this, when the plate 850 is rubbed against the flexible patch layer 830 (ie, the cast-frame structure) (or the cast-frame structure is rubbed against the plate 850), the excess portion of the flexible material is caused by relative movement. It is pushed out of the area occupied by the casting-frame structure. For example, placing a support plate on a plaster plaster and rubbing it is similar to pushing the plaster plaster underneath the support plate out of the area occupied by the support plate. Eventually, the excess portion is gradually lowered in height, and as shown in FIG. 8, the top layer of the flexible material filled in the grooves coincides with the grooved surface.

In one embodiment, step S850 may include flipping the top and bottom so that the flexible patch layer 830 is disposed on one surface of the plate 850 during the contact process. When the flipping step is performed, a flexible patch layer 830 (ie, a casting-frame structure) is disposed on one surface of the plate 850. In this embodiment, the area of the plate 850 may be larger than the area of the casting-frame structure.

In this arrangement, when the plate 850 and the casting-frame structure are rubbed, the excess material of the casting-frame structure is pushed out of the area occupied by the casting-frame structure by movement of the casting-frame structure. It is less likely that excess portions of the flexible material remain on the sides.

In addition, step S850 may further include applying pressure to a contact portion between the flexible patch layer 830 and the plate 850. 8, the pressure may be applied using a magnet. In one example, a casting-frame structure and a plate 850 may be disposed between the magnet 861 and the magnet 862. Due to this, pressure may be applied to the contact portion by the attraction force between the magnet 861 and the magnet 862. As described above, the cast-frame structure and the plate 850 may be made of a non-magnetic material, so that interaction of attraction between the magnet 861 and the magnet 862 does not affect.

Due to this, as a result of rubbing the cast-frame structure and the plate 850, the time during which the excess portion is removed can be reduced, so that the efficiency of the removal process can be improved.

After the step S850, the sacrificial layer 820 is etched using the etching solution (S870). The etching is performed while adjusting the selectivity of the etching solution so as not to etch the mold 810 and the flexible patch layer 830 while etching the sacrificial layer 820. In one embodiment, the etching solution used for etching the sacrificial layer 820 may include acetone.

In an experimental embodiment, the sacrificial layer 820 is removed by immersing the casting-frame structure in which the portion of the flexible patch layer 830 exceeding the groove is removed in the etching solution, and the mold 810 and the casting (ie, flexible patch) Layer 830 is separated. The separated flexible patch layer 830 includes a plurality of holes formed by grooves of the mold 810. The plurality of holes are formed in a through shape because the flexible material inside the groove is matched to the surface of the mold 810 in step S850. As a result, as shown in FIG. 8, a flexible patch layer 830 including a plurality of through-holes can be obtained, and the flexible patch layer 830 including a plurality of through-holes can be used as the flexible patch 30 Can.

The time during which the casting-frame structure is immersed in the etching solution can be variously set. For example, the etching time of the casting-frame structure may be determined by the thickness of the groove (ie, the thickness of the flexible patch 30), the thickness of the sacrificial layer 820, the cross-sectional area where the groove and the flexible patch layer 830 abut, and the like. have.

Also, in step S870, the casting-frame structure in the etching solution may be ultrasonicated for a more efficient etching process.

Although the flexible patch 30 manufactured in steps S810 to S870 is manufactured in a thickness of micro units, adhesion may be increased by a plurality of holes. In addition, the plurality of holes is a through-hole, and even when the flexible patch 30 is attached to the skin, it does not block the skin of the attachment portion from outside air. Thus, the flexible patch 30 is surface-treated so as to have a micro structure only on the patch surface (such as an octopus sucker, or a cutting board foot), so that only the adhesion is good, and the breathability is relatively inferior to the conventional skin patch. Alternatively, it can have both breathability and adhesion.

In addition, when the flexible patch layer 830 is separated from the mold 810 using the sacrificial layer 820, a plurality of holes (or hole patterns) in the flexible patch layer 830 are generated and separated, such as tearing. No damage occurs.

Since the flexible patch 30 has excellent adhesion and breathability to the skin, it can be used to manufacture various electronic devices that can be attached to the skin, such as a skin sensor.

Additionally, the flexible patch 30 may have stronger adhesion due to material properties such as the components and thickness of the flexible patch layer 830.

10A to 10D are diagrams for explaining the adhesion of the flexible patch 30 attached to the skin according to an embodiment of the present invention.

The through hole of the flexible patch 30 is a micro unit and is very small compared to the size of the flexible patch 30, and is omitted in FIG. 10 for clarity.

10A is a view for explaining the principle of attachment between an object and a surface.

The ability of the contact object (P) to contact the surface (S) to attach to the surface (S) is in competition between structural resistance and interfacial interactions for deformation (competitive with each other in terms of reversibility and pluripotency). It is decided by. As shown in FIG. 10A, when the surface is deformed by the object P, the energy between the object P and the surface S may be expressed by the following Equation 2-5.

Here, Utotal represents the total potential energy, Uadhesion represents the attachment energy between the object P and the surface S, and Ubending represents the bending energy associated with the resistance of the surface S deformed by the object P. . Here, the sign of the attachment energy and the bending energy only indicates the direction of interaction, and in other embodiments, the sign of the attachment energy may be expressed as +, and the sign of the bending energy may be expressed as -.

In addition, W is the work of adhesion (unit is N m-1), b is the length of the object (P) attached to the surface, R is the curvature, θ is the contact between the object (P) and the surface (S) It represents the contact angle, which is the angle from the center of the part to the point where the abutting part ends. D is the flexural rigidity of the object P, which is determined by the Young's modulus of the object P and the thickness of the object.

In order to describe the adhesion of the flexible patch 30 more simply, a case where the flexible patch 30 having a mono-layer structure is attached to the skin surface will be described with reference to FIG. 10A.

When the case where the flexible patch 30 is attached to the skin surface is applied to FIG. 10A, the surface S corresponds to the skin surface, and the object P is a flexible patch including a flexible patch layer 830 in which a through hole is formed. 30). Therefore, the flexural strength D for the flexible patch 30 is determined by the elastic modulus E of the flexible patch layer 830 and the thickness t of the flexible patch layer 830.

When the adhesion energy is greater than the bending energy, adhesion between the patch 30 and the skin surface is possible. When the attachment energy is less than the bending energy, the patch 30 is detached from the skin surface. The critical work of adhesion (Wc), which determines whether attachment is possible, is determined by Equation 6 below.

If Equation 6 is summarized as Wc, the critical attachment work Wc at which the object and the surface is maintained is calculated as Wc=D/(24R ² ). If the attachment W between the flexible patch 30 and the skin surface is greater than or equal to the critical attachment work Wc, the flexible patch 30 is capable of conformal contact with the skin surface. On the other hand, when the attachment work W between the flexible patch 30 and the skin surface is less than the critical attachment work Wc, the flexible patch 30 does not contact the skin surface. Therefore, in order to be able to adhere between the flexible patch 30 and the skin surface, the size of the critical attachment work Wc must be reduced, and/or the size of the attachment work W between the flexible patch 30 and the skin surface must be increased.

Referring to Equation 5, when the patch 30 is made of a material having a large modulus of elasticity (eg, a stiff material), and/or has a high flexural strength D when the thickness is thick. Accordingly, the flexible patch 30 can be stably attached on the skin surface when the flexural strength D of the flexible patch 30 decreases and/or when the adhesion between the skin surface and the flexible patch 30 is large.

Therefore, when the elastic modulus E of the flexible patch 30 is low, the flexible patch 30 can stably adhere on the skin surface when the thickness of the flexible patch 30 is thin.

In addition, as the adhesion energy between the flexible patch 30 and the surface of the skin increases, the adhesion of the flexible patch 30 is enhanced. Referring to Equation 2, the adhesion energy between the skin surface and the flexible patch 30 depends on the attachment work W. The attachment work W between the flexible patch 30 and the skin surface is expressed by the following equation (7).

Here, γ _d denotes a dispersive component of surface, and γ _p denotes a polar component of surface. γ _dSkin polarity of the contact surface of the dispersion component of the contact surface of the skin, γ _dPatch denotes the variance of the touch surface of the patch (30), γ _pSkin is the polar component of the contact surface of the skin, γ _pPatch patch 30 It shows the ingredients. The flexible patch 30 is configured based on Equation 7 above.

As described above, the flexible patch 30 can be utilized to manufacture a skin sensor. A PDMS patch 30 having an exemplary elastic modulus of 1 MPa sufficient to support micro-scale micro-elements in the micro-thickness range can be attached to the skin. Γ _d and γ _p of the skin surface are different for each site, but the maximum and minimum ranges of the variables are known as shown in Table 1 below.

When the data in Table 1 is applied to Equation 7, the attachment work W between the skin and the PDMS patch 30 is roughly calculated as follows: 31≤W≤54 mJ m ^-2 .PDMS with elastic modulus 1MPa In order for the thickness of the patch 30 to be attached to all skins, it should be possible to attach to the skin surface (Skin Min) with the lowest attachment work. Therefore, the PDMS patch 30 should have a value of Wc=31. Therefore, the PDMS patch 30 must be formed to a thickness of about 80 μm to meet the condition of the critical attachment work Wc. Therefore, the thickness of the single flexible patch 30 of 1 MPa is less than 80 μm, so conformal adhesion to the skin surface is possible.

In some embodiments, if a single flexible patch 30 having an elastic modulus lower than 1 MPa has a thickness of less than 80 μm, it may have stronger adhesion. In some other embodiments, one layer of the flexible patch 30 having a modulus of elasticity lower than 1 MPa is suitable for adherence to the skin surface even with a thickness of 80 μm or more. For example, even when the thickness of one layer attached to the skin surface is 100 μm, it may be possible to adhere to the skin.

As described above, flexural strength D is related to the ability of the flexible patch 30 to attach, and also to the ability to maintain the shape of the flexible patch 30. Referring to Equations 5 and 6, when the elastic modulus E of the flexible patch 30 is low, when the thickness of the flexible patch 30 is thin, the flexible patch 30 is stably attached on the skin surface. Can.

However, handling is difficult when the thickness of the flexible patch 30 is too thin or the elastic modulus is too low in consideration of only adhesiveness. Specifically, when the flexural strength of the flexible patch 30 is too low, bending occurs in the flexible patch 30, making it difficult to handle, and the shape of the flexible patch 30 is difficult to maintain constant. Therefore, when the flexural strength of the flexible patch 30 is too low, it is difficult to integrate other components on the flexible patch 30.

To overcome this, the portion attached to the skin has a relatively low flexural strength, and the portion where other components, which are not attached to the skin and have a relatively low need for high adhesion, are accumulated, is sufficient to maintain shape without bending. The flexible patch 30 may be configured to have flexural strength. For example, the flexible patch 30 may be formed of one or more layers so as to have stronger adhesion and sufficient flexural strength to support other components (eg, including electrodes, semiconductor devices, interactions, etc.). Can be configured. In order to manufacture the flexible patch 30, the flexible patch layer 830 formed on the sacrificial layer 820 may include one or more sub-layers.

10B is a view for explaining a flexible patch 30 having a bi-layer structure having different elastic moduli, according to an embodiment of the present invention.

In one embodiment, the flexible patch 30 having a bi-layer structure includes two sub layers having different rigidities (the first flexible layer 831 of FIG. 10B, and the second flexible layer 133). can do.

Here, the first flexible layer 831 attached to the skin has a lower flexural strength D1 than the flexural strength D2 of the second flexible layer 832 that is not attached to the skin. For example, the first flexible layer 831 can be configured to have a low modulus of elasticity (eg, 0.04 Mpa) to allow for a suitable attachment to the skin surface.

On the other hand, the second flexible layer 832 is more rigidly configured to facilitate handling by appropriately controlling bending of the flexible patch 30 while supporting a semiconductor circuit or the like integrated on the flexible patch 30.

10B, the first flexible layer 831 has an elastic modulus E1 of 0.04 MPa, and the second flexible layer 832 has an elastic modulus E2 of 1 MPa, so that the first flexible layer 831 It can be formed more smoothly.

In one embodiment, the flexible patch layer 830 may include a first flexible layer 831 and a second flexible layer 832 that include a pre-polymer and a curing agent. Here, the second flexible layer 832 may be configured to have a larger curing agent ratio than the curing agent ratio of the first flexible layer 831. In one example, the first flexible layer 831 may have a pre-polymer to curing agent ratio of 40:1, and the second flexible layer 832 may have a pre-polymer to curing agent ratio of 10. It can consist of :1. The flexural strength D of the first flexible layer 831 and the second flexible layer 832 is determined differently due to the difference in ratio of the curing agent.

Due to the difference in these constituent materials, the first flexible layer 831 is relatively soft and sticky compared to the second flexible layer 832, and the flexible patch 30 can be attached to the skin To do. The relatively rigid second flexible layer 832 serves as a support (eg, a substrate) for integrating micro-scale devices when the flexible patch 30 is used to manufacture a skin sensor or the like.

In addition, the thickness of the first flexible layer 831 and the second flexible layer 832 may be formed differently from each other. Referring back to Equation 5 above, the flexural strength D is determined depending on the elastic modulus E and the thickness.

10C is a view for explaining a flexible patch 30 having a bi-layer structure having different thicknesses according to the first embodiment of the present invention, and FIG. 10D is a bi according to the first embodiment of the present invention. -It is a graph showing the characteristics of the flexible patch according to the thickness of the layer structure.

As shown in FIG. 10C, when the bi-layer flexible patch 30 is attached to the skin surface, the attached flexible patch 30 is stretched due to the characteristic of the skin surface having a generally curved structure. . The stretched flexible patch 30 is applied with a restoring force (F _ret ) to return to before stretching. The resilience (F _ret ) may be analyzed as in Equation 8 below. The first flexible layer 831 and the second flexible layer 832 of the flexible patch 30 may have the same tensile stress σ and tensile strain ε when made of the same material (eg, PDMS).

Here, F1 denotes each restoring force applied to the first flexible layer 831 attached to the skin, and F2 denotes each of the second flexible layer 832 attached to the skin. t1 represents the thickness of the first flexible layer 831 and t2 represents the thickness of the second flexible layer 832.

The total elastic modulus Eeq of the bi-layer structured flexible patch 30 may be expressed by the following Equation (9).

In one example, when the thickness of the first flexible layer 831 attached to the skin having a modulus of elasticity of 0.04 MPa is formed to be 100 μm, the effective elastic modulus of the flexible patch 30, and the refractive strength (Flexural) The rigidity), and a graph of the critical attachment work between the flexible patch 30 and the skin surface can be calculated by Equation (9) above, and the result is shown in FIG. 10D.

The first flexible layer 831 and the second flexible layer 832 included in the bi-layer structured flexible patch 30 refer to Equation (9) above, wherein the flexible patch 30 is manufactured (eg, skin) It may be formed to have a thickness and elastic modulus suitable for the function of the sensor).

The above description of the flexible patch layer 830 of the bi-layer structure is merely exemplary, and the flexible patch layer 830 of the present invention is not interpreted as being limited to the bi-layer structure. In other embodiments, the flexible patch layer 830 may be formed in a mono-layer or triple-layer structure. In one example, the flexible patch layer 830 may be formed in a mono layer structure including only the second flexible layer 832. In another example, the flexible patch layer 830 may be formed of a triple layer structure including a rigid second flexible layer positioned between two soft first flexible layers. The triple layer structured flexible patch layer 830 may include two first flexible layers having different thicknesses. For example, the first flexible layer of the portion attached to the skin may be formed with a thickness of 10 μm, and the first flexible layer on the opposite side may be formed with a thickness of 100 μm.

In addition, 1MPa disclosed as an elastic modulus supporting a micro device in a micro unit is merely exemplary, and the second flexible layer 832 included in the flexible patch 30 may have a different elastic modulus.

As described above, the flexible patch 30 may be manufactured using the sacrificial layer 820 and thus may have high durability because no damage occurs in the process of obtaining the flexible patch layer 830 having a micro unit thickness.

Referring back to FIG. 4, after forming the first substrate 101, the sacrificial layer 105 and the sensor circuit unit 10, the flexible patch 30 is bonded to the active layer 115 of the sensor circuit unit 10. It can be made (S430). Bonding can be accomplished by conventional wafer bonding techniques. In one embodiment, for bonding between the flexible patch 30 and the active layer 115 manufactured by the manufacturing process of FIG. 8, the semiconductor structure and the flexible patch 30 are plasma treated (eg, O2 plasma treatment) ) To activate the bonding surface of the semiconductor structure and the flexible patch 30.

In some embodiments, when the flexible patch 30 is a bi-layer structure composed of a more sticky layer and a harder layer, the bonding surface of the flexible patch 30 may be one side of the harder layer. In some other embodiments, when the flexible patch 30 is a triple-layer structure composed of two more sticky surfaces and one harder surface, the bonding surface of the flexible patch 30 is one side of any one of the more sticky layers Can.

In addition, an insulating layer (eg, SiO2) may be further formed on the semiconductor structure of FIG. 5D prior to plasma treatment. In some embodiments, for bonding, additional pressure may be applied to the flexible patch and the semiconductor structure.

Thereafter, the flexible patch 30 whose surface is activated by plasma treatment is disposed on the semiconductor structure to bond the flexible patch 30 with the semiconductor structure (ie, the active layer 115) (S430).

Then, the sacrificial layer 105 is removed through a process such as etching, and the flexible patch 30 is a flexible adhesive substrate attached to the skin, and the skin including the sensor circuit unit 10 integrated on the flexible adhesive substrate The sensor 1 can be obtained (S450).

Etching is performed while adjusting the selectivity of the etching solution so as not to etch the components of the skin sensor 1 (including the sensor circuit unit 10 and the flexible patch 30) while etching the sacrificial layer 105. . The etching solution used for etching the sacrificial layer 105 may include acetone.

The bonding process (S430) may be performed based on further arrangement between components of the skin sensor 1 in order to maximize air permeability of the skin sensor 1.

The components of the skin sensor 1 may be arranged based on the principle of operation of the skin sensor. As described with reference to FIG. 2, in the case of manufacturing the skin sensor 1 for detecting deformation of the skin, the flexible patch 30 includes a part of the active layer 115 and the flexible material of the flexible patch 30 The through hole is disposed on the active layer 115 so as not to contact (S430). In one example, as described above with reference to FIG. 2, the flexible patch is disposed on the active layer such that a plurality of through-holes of the flexible patch and a plurality of through-holes of the insulating layer are matched in a plane. Therefore, the deformation result of the active layer 115 located in the air can be obtained to the maximum.

In addition, the flexible patch 30 is disposed further based on components below the active layer 115. In one embodiment, in order to manufacture the skin sensor 1, a through hole H1 of the insulating layer 113 on a part (eg, an extension bar included in the

electrodes

111A and 111B) or all of the electrode 111 ) Is disposed, and the active layer 115 is disposed on the through hole H of the insulating layer 113, and the through hole H2 of the flexible patch 30 can be disposed on the active layer 115. . Here, the through-hole H1 of the insulating layer 113 may be arranged such that the through-hole H2 of the flexible patch 30 and the projection portion match, as illustrated in FIG. 2B. Through this arrangement, the skin sensor 1 can effectively obtain skin information based on the operation of the active layer 115, and can secure high breathability of the skin sensor 1.

Additionally, to place the flexible patch 30 on the semiconductor structure (ie, on the active layer 115), the flexible patch 30 may be disposed on Align glass. The flexible patch 30 may not have a flat surface due to its flexible nature. The adhesiveness of the flexible patch 30 increases as the surface to which the skin is attached is flat. Accordingly, after the flexible patch 30 has a flat cross-section of the flexible patch 30 on the array glass by using a ruler on the flexible patch 30, the flexible patch 30 is transferred onto a semiconductor structure and the array glass is removed. The skin sensor 1 having the flexible patch 30 with a flat surface can be manufactured. Due to this, the adhesion of the skin sensor 1 can be maximized.

As such, when the semiconductor device of the electronic device includes a piezoelectric material, the electronic device may be used as a skin sensor that is attached to the skin and obtains deformation and/or elasticity information of the skin. The skin sensor 1 manufactured by the above-described process may operate as a sensor in a state attached to the skin. The piezoelectric material for which deformation is detected is disposed on a relatively large through hole, so that the skin sensor can more effectively obtain skin deformation information due to the physiological behavior of the skin.

In addition, the skin sensor 1 according to various embodiments of the present invention can be used not only to measure skin pull, but also to measure skin elasticity.

4 and 11, since the manufacturing method of the skin sensor according to the second embodiment of the present invention is substantially similar to the manufacturing method of the skin sensor according to the first embodiment of FIG. 4, differences will be mainly described.

As shown in FIG. 4, the active layer 115 of the sensor circuit unit 10 is formed to be positioned closest to the flexible patch 30 among the components of the sensor circuit unit 10.

However, in other embodiments, the active layer 115 of the sensor circuit unit 10 may be formed to be positioned farthest from the flexible patch 30 among the components of the sensor circuit unit 10. That is, the skin sensor 1 of FIGS. 1B and 1C can be manufactured.

The method of manufacturing the skin sensor 1 attachable to the skin according to the second embodiment, similar to the first embodiment, forming a sacrificial layer 105 on the substrate 101 (S1101); Forming a sensor circuit unit 10 on the sacrificial layer 105 (S1110); Bonding the sensor circuit unit 10 and the flexible patch 30 including the through hole (S1130); And etching the sacrificial layer 105 to manufacture the skin sensor 1 (S1150).

In the above embodiment, forming the sensor circuit unit 10 on the sacrificial layer 105 (S1110) includes: forming an active layer 115 on the sacrificial layer 105 (S1111); Forming an insulating layer 113 on the active layer 115 (S1113); And forming an electrode 111 and/or interconnect 112 on the insulating layer 113 (S1115).

As such, the skin sensor 1 may be manufactured such that the active layer 115 is positioned at the top of the skin sensor 1. In the skin sensor 1 manufactured by the second embodiment, the circuit components (ie, the electrode 111 and/or the interconnect 112) and the active layer 115 are replaced with the rest of the structure. Therefore, the operating principle of the skin sensor 1 in FIG. 11 is similar to the operating principle of the skin sensor 1 in FIG. 2, and detailed description is omitted.

In the method of manufacturing an electronic device attachable to the skin according to the above-described embodiments, the process of forming a semiconductor device and the process of manufacturing the flexible patch 30 including a plurality of through holes are separated. However, according to other embodiments of the present invention, the electronic device of the first or second embodiment can be manufactured by an all-in-one process.

4 and 12, since the manufacturing method of the skin sensor according to the third embodiment of the present invention is substantially similar to the manufacturing method of the skin sensor according to the first embodiment of FIG. 4, differences will be mainly described.

According to the manufacturing method of the skin sensor according to the second embodiment, the skin sensor 1 having the same structure as the first embodiment can be manufactured. However, referring to FIG. 12, the manufacturing method of the skin sensor 1 according to the third embodiment of the present invention includes a process of manufacturing the flexible patch 30 and a process of manufacturing a semiconductor structure including the sensor circuit unit 10. It consists of a non-separable, all-in-one manufacturing process. That is, the manufacturing process of the flexible patch 30 and the manufacturing process of the semiconductor structure are separated from the manufacturing method of the skin sensor 1 of the first embodiment.

12A to 12H, in a third embodiment, a method of manufacturing a skin sensor 1 attachable to skin includes: forming a sacrificial layer 105 on the substrate 101 (S1201); Forming a sensor circuit unit 10 on the sacrificial layer 105 (S1210), forming an electrode 111 and/or an interconnect 112 on the sacrificial layer 105 (S1211); Forming an insulating layer 113 on the electrode and/or interconnect (S1213); And forming an active layer 115 on the insulating layer 113 (S1215). In addition, forming a flexible patch layer 830 on the sensor circuit unit 10 (ie, on the active layer 115) (S1230); Contacting the mold 810 with the flexible patch layer 830 to form a plurality of through holes (S1240); Etching the sacrificial layer 105 to manufacture the skin sensor 1 (S1250); And removing the mold 810 (S1270).

As described above, the skin sensor 1 manufactured by the manufacturing method of the skin sensor 1 of the third embodiment is monolithic in which all circuit elements and interconnections are formed on the flexible patch 30, which is a flexible adhesive substrate. It corresponds to electronic devices. The manufacturing method of the skin sensor 1 of the third embodiment has the advantage of being able to produce a miniaturized and lightweight electronic device, high integration and reliability of the electronic device, and mass production possible, resulting in low cost.

Referring to FIG. 12A, in one embodiment, the sacrificial layer 105 is formed in consideration of photolithography, etching selectivity, and thermal stability. In one example, the sacrificial layer 105 may be made of a material including one or more of Cr, Al, Ni, Au, and combinations of the sacrificial layer 105. In some embodiments, the sacrificial layer 105 may be further formed in consideration of cost. In this case, the sacrificial layer 105 may be made of, for example, a material including one or more of Cr, Al, Ni, and combinations thereof.

In step S1210, a sensor circuit unit 10 (ie, a polycrystalline semiconductor structure) including a polycrystalline active layer 115 or the like is deposited on the metal sacrificial layer 105. In one embodiment, electrode 111 and interconnect 112, insulating layer 113, and active layer 115 (eg, acting as a sensing material) are sequentially formed on sacrificial layer 105.

In one example, the polycrystalline active layer 115 may be formed through transfer using a stressor, similar to the first embodiment.

In another example, since the polycrystalline semiconductor material can grow regardless of the substrate, it is formed by directly growing on the sacrificial layer 105. For example, the polycrystalline active layer 115 may be formed by sputtering, evaporation, physical vapor deposition (PVD), or low-pressure CVD (CVD), plasma-enhanced CVD (CVD), or the like. It may be formed by vapor deposition directly by a vapor deposition method. In some examples, growth of the polycrystalline active layer 115 may be performed at a temperature of 500 degrees or less.

In one example, each layer is formed to have a through hole corresponding to the through hole of the flexible patch 30, as shown in Figure 12c, the insulating layer 113 to ensure breathability.

Steps S1201 and S1210 are performed by a photolithography-based etching process.

Thereafter, a flexible patch layer 830 is formed on the sensor circuit unit 10 (S1230). The flexible patch layer 830 is a flexible patch 30 in which a through hole is not formed. The flexible patch layer 830 is directly formed on the sensor circuit unit 10 (S1230). The process of forming the flexible patch layer 830 and the components, structures, and thicknesses of the flexible patch layer have been described above with reference to FIGS. 8 and 10, and detailed descriptions thereof will be omitted.

After forming the flexible patch layer 830, a through hole may be formed in the flexible patch layer 830.

In step S1240, the formation of the through-holes may be performed by a soft lithography-based process. In one example, the formation of through-holes may be performed by a soft lithography process using micromolding.

Specifically, in one embodiment, the mold 810 is contacted with the flexible patch layer 830 to form a through hole (S1240). The mold 810 may be configured with a groove structure having a flat shape shown in FIGS. 9A and 9C. The groove depth of the mold 810 may have a depth greater than or equal to the thickness from the sensor circuit unit 10 (ie, the active layer 115) to the flexible patch layer 830.

The formwork 810 contacts the flexible patch layer 830 to reach the sensor circuit unit 10 (ie, the active layer 115) to form a through hole. That is, the mold 810 is similar to stamping a soft material. When the mold 810 is in contact with the flexible patch layer 830, the edge portion of the groove penetrates the flexible patch layer 830 so as to form a through hole in the flexible patch layer 830.

In step S1240, a process of heating the flexible patch layer 830 may be further performed so that the edge region of the groove of the mold 810 can penetrate the flexible patch layer 830 more easily.

12 shows the form 810 in which only the through hole in which the active layer 115 is disposed is formed, this is for clarity of explanation only. In step S1240, a mold 810 capable of forming one or more through holes may be used to enhance breathability.

In step 1240, a through-hole may be formed to manufacture the free standing skin sensor 1. That is, at least one of the through holes formed by the mold 810 is disposed on the zigzag bar of the electrode 111 as described with reference to FIG. 2.

In one embodiment, the through hole is formed on a portion of the electrode 111 based on one or more key holes included in the mold 810 and one or more alignment keys included in the semiconductor structure. . For this reason, the skin sensor 1 can have a free standing type structure. Since the structure of the skin sensor 1 manufactured by the manufacturing method according to the second embodiment is the same as that of the skin sensor 1 of the first embodiment, skin information can be obtained by the same operation principle.

In the above embodiment, the formwork 810 may include one or more key holes. The key hole is a through hole different from the through hole of the flexible patch 30 for breathability of the skin sensor 1, and may be composed of different planes (eg, crosses) as shown in FIG. 12.

In the above embodiment, one or more keys matching the key hole of the mold 810 may be formed in the semiconductor structure before step S1040. In one embodiment, one or more keys having a planar shape matching the hole shape of the keyhole may be formed in step S1211. The one or more keys may be formed by the same material as the material constituting the electrode 111 and/or the interconnect 112, and/or by the same method.

After the mold 810 and the flexible patch layer 830 contact to form a through hole in step S1240, the sacrificial layer 105 is etched (S1250). After the sacrificial layer 105 is removed, the mold 810 is removed to prepare the skin sensor 1.

As described above, the manufacturing method according to the second embodiment forms a semiconductor circuit using photography on the substrate 101, and a biocompatible PDMS patch that does not inhibit skin breathability by using soft lithography directly thereon. The skin sensor 1 can be manufactured by forming 30. Due to this, the semiconductor circuit (that is, the sensor circuit unit 10) and the flexible patch need not be made separately and then bonded, thereby reducing the complexity of the process and obtaining a high device transfer yield.

12 and 13, since the manufacturing method of the skin sensor according to the fourth embodiment of the present invention is substantially similar to the manufacturing method of the skin sensor according to the third embodiment of FIG. 12, the manufacturing process is the third Differences from the examples will be mainly described.

According to the manufacturing method of the skin sensor according to the fourth embodiment, the skin sensor 1 having the same structure as the second embodiment can be manufactured. That is, the skin sensor 1 shown in FIGS. 1B and 1C can be manufactured.

In the method for manufacturing the skin sensor 1 according to the fourth embodiment of the present invention, the process of manufacturing the flexible patch 30 and the process of manufacturing the semiconductor structure including the sensor circuit unit 10 are not separated, all-in-one (all- in one) manufacturing process. That is, the manufacturing process of the flexible patch 30 and the manufacturing process of the semiconductor structure are separated from the manufacturing method of the skin sensor 1 of the second embodiment.

In a fourth embodiment, a method of manufacturing a skin sensor 1 that can be attached to a skin includes: forming a sacrificial layer 105 on the substrate 101 (S1301); Forming a sensor circuit unit 10 (S1310); Forming a flexible patch layer 830 on the sensor circuit unit 10 (S1330); Contacting the mold 810 with the flexible patch layer 830 to form a plurality of through holes (S1340); Etching the sacrificial layer 105 to manufacture the skin sensor 1 (S1350); And removing the mold 810 (S1370).

On the other hand, the skin sensor 1 of the fourth embodiment has the same structure as the skin sensor 1 of the second embodiment. Accordingly, the sensor circuit unit 10 of the fourth embodiment is formed in order of the active layer 115, the insulating layer 113, and the circuit components (electrodes 111 and/or interconnects 112) after the sacrificial layer 105 is formed. It is laminated (S1310). That is, step S1310 includes forming an active layer 115 (S1311); Forming an insulating layer 113 on the active layer 115 (S1313); And forming an electrode 111 and/or interconnect 112 on the insulating layer 113 (S1315).

According to the fourth embodiment, the skin sensor 1 can be manufactured using the active layer 115 made of a single crystal structure. The single crystal material cannot be raised directly on the metal sacrificial layer 105.

In order to grow a single crystal semiconductor material, a substrate that is the same or similar to a single crystal semiconductor and a temperature of at least 700 degrees is required. Therefore, instead of directly forming the single crystal active layer 115 on the metal sacrificial layer 105, 2DLT stressor transfer using a stressor is performed to form the active layer 115 on the metal sacrificial layer 105.

Specifically, as shown in FIG. 13C, a polyamide layer 109 is first formed on the sacrificial layer 105 (S1309), and a single crystal thin film (ie, active layer 115) separated by a 2DLT process is polyamide. A process of forming the active layer 115 by transferring to the layer 109 is added (S1311).

In one embodiment, the polyamide layer 109 may be made of a material including polyamide. For example, the polyamide layer 109 is a compounding state including various fillers, and may be formed in an uncured structure.

In addition, step S1311 further includes a step of patterning the active layer 115 such that the width of the active layer 115 becomes smaller than the width of the through hole of the flexible patch 30. The width of the active layer 115 formed in FIG. 13C is reduced by patterning, as shown in FIG. 13D.

Subsequently, as illustrated in FIG. 13E, an insulating layer 113 having a through hole matching the through hole of the flexible patch 30 is formed. Then, as illustrated in FIG. 13K, a through hole penetrating the insulating layer 113 and the flexible patch 30 may be formed on the patterned active layer 115. As described above with reference to FIG. 5B, the through hole of the insulating layer 113 is matched with the through hole of the flexible patch 30 so as not to interfere with the flow of air moving through the through hole of the flexible patch 30 Because it is formed.

In step S1311, the active layer 115; The active layer 115 is transferred onto the polyamide layer 109 using a transfer structure including a stresser layer 730 and a tape layer 750. Thereafter, the stressor layer 730 and the tape layer 750 excluding the active layer 115 are removed so that only the active layer 115 is positioned on the polyamide layer 109. Since the formation of the active layer 115 using the transfer structure is similar to that described with reference to FIG. 7, detailed description is omitted.

In addition, the method for manufacturing the skin sensor 1 according to the fourth embodiment further includes the step of removing the polyamide layer 109 (S1360). In one embodiment, polyamide layer 109 is removed by plasma etching (eg, including O2 plasma etching).

As described above, according to embodiments of the present invention, it is possible to obtain an electronic device 1 that can be attached to the skin. The electronic device 1 may be manufactured by a process in which the process of forming the semiconductor circuit unit 10 and the process of forming the flexible patch 30 are separated, or the semiconductor circuit unit 10 and the flexible patch by an integrated process. Electronic device 1 including 30 can be obtained.

The present invention described above has been described with reference to the embodiments shown in the drawings, but this is merely exemplary, and those skilled in the art will understand that various modifications and modifications of the embodiments are possible therefrom. However, it should be considered that such modifications are within the technical protection scope of the present invention. Therefore, the true technical protection scope of the present invention should be defined by the technical spirit of the appended claims.

The electronic device according to embodiments of the present invention has a mechanical property similar to that of a skin and has a through hole, and thus is formed on a flexible patch having strong adhesion and high breathability. Such electronic devices can be utilized as various electronic devices attached to the skin, such as a skin sensor, and thus can be used infinitely in various technical fields that can utilize skin-related electronic devices such as the healthcare field and the beauty field.

Claims

Semiconductor circuit unit-The semiconductor circuit unit includes a circuit element including at least one of an electrode and an interconnect; And a semiconductor device including an insulating layer and an active layer; And

Includes a flexible patch configured to be attached to the skin, including a plurality of through-holes,

The insulating layer includes a plurality of through-holes corresponding to the plurality of through-holes of the flexible patch, the electronic device attachable to the skin.
According to claim 1,

The plurality of through-holes includes a circular through-hole, characterized in that the gap between the plurality of through-holes is less than 60μm, an electronic device that can be attached to the skin.
According to claim 2,

The plurality of through-holes, characterized in that it further comprises a through-hole in the form of a dumbbell, an electronic device that can be attached to the skin.
According to claim 2,

The plurality of through-holes include a combination of a first through-hole having a first diameter and a second through-hole having a second diameter,

The first diameter is larger than the second diameter, the second through-hole, characterized in that the first through-hole is located around, electronic device that can be attached to the skin.
According to claim 1,

The flexible patch is disposed on the active layer so that the plurality of through-holes of the flexible patch and the plurality of through-holes of the insulating layer are matched in a plane, an electronic device attachable to the skin.
According to claim 1,

The active layer is made of a material containing AlN or GaN, electronic device that can be attached to the skin.
According to claim 1,

The circuit element includes a first electrode and a second electrode located opposite the first electrode,

The first electrode includes one or more first bars,

The second electrode includes at least one second bar,

In the first bar, the plane of the first bar is zigzag, extending toward the second electrode, and in the second bar, the plane of the second bar is zigzag, extending toward the first electrode Electronic device that can be attached to the skin, characterized in that.
According to claim 1,

The zigzag shape of the first bar or the second bar is characterized in that it comprises a hinge pattern located at a point where the direction of extension of the bar changes, the electronic device attachable to the skin.
According to claim 1,

The flexible patch includes a first flexible layer having a first elastic modulus and a second flexible layer having a second elastic modulus,

The first elastic modulus, characterized in that lower than the second elastic modulus, an electronic device that can be attached to the skin.
The method of claim 9,

The thickness t1 of the first flexible layer and the thickness t2 of the second flexible layer are determined based on the following equation,

[Mathematics]

And t is the thickness of the flexible patch, E1 is the elastic modulus of the first flexible layer, E2 is the elastic modulus of the second flexible layer, R is the curvature of the flexible patch attached to the skin, γ dSkin is the dispersion component of the skin's contact surface, dPatch γ denotes the variance of the touch surface of the patch, γ pSkin is the polar component of the contact surface of the skin, γ pPatch is attachable to the skin, characterized in that the electronic device indicating the polar component of the contact surface of the patch.
Forming a sacrificial layer on the first substrate;

Forming a semiconductor circuit unit including a semiconductor element and a circuit element on the sacrificial layer;

Bonding a flexible patch including a plurality of through holes on the semiconductor circuit; And

And etching the sacrificial layer to manufacture the electronic device including the semiconductor circuit unit and the flexible patch.
The method of claim 11, wherein the step of forming the semiconductor circuit unit,

Forming a circuit element on the sacrificial layer, the circuit element comprising at least one of an electrode and an interconnect;

Forming an insulating layer on the circuit element-the insulating layer is formed to have a plurality of through holes corresponding to a plurality of through holes of the flexible patch; And

Forming an active layer on the insulating layer; characterized in that it comprises, a method of manufacturing an electronic device that can be attached to the skin.
The method of claim 11, wherein the step of forming the active layer,

Forming an active layer on the second substrate;

Forming a stresser layer on the active layer;

Placing a tape on the stresser layer;

Peeling the active layer and the stresser layer from the second substrate using the tape;

Transferring a peeled active layer and a stresser layer onto the insulating layer-the peeled active layer is transferred onto the insulating layer; And

A method of manufacturing an electronic device attachable to skin, comprising the step of peeling the stresser layer from the active layer using the tape.
The method of claim 13,

The stresser layer is made of a plurality of layers,

The step of forming the stressor layer,

Forming a first stressor layer on the active layer by evaporating;

Forming a second stressor layer on the first stressor layer by sputtering deposition; And

A method of manufacturing an electronic device attachable to a skin, comprising forming a third stressor layer on the second stressor layer by sputtering deposition.
The method of claim 14,

The second stressor layer is made of a material containing Al,

A method of manufacturing an electronic device that can be attached to the skin, characterized in that the third stressor layer is made of a material containing Ni.
The method of claim 15,

The first stressor layer is characterized in that made of a material containing Ni or AgNi, Method for manufacturing an electronic device that can be attached to the skin.
The method of claim 11, wherein the bonding step,

A method of manufacturing an electronic device attachable to the skin, further comprising applying pressure between the flexible patch and the semiconductor circuit unit.
The method of claim 11,

A method of manufacturing an electronic device attachable to the skin, further comprising plasma treatment of the semiconductor circuit unit and the flexible patch prior to bonding.
The method of claim 11, wherein the bonding step,

A method of manufacturing an electronic device that can be attached to the skin, characterized in that the flexible patch is disposed on the active layer so that a plurality of through holes of the flexible patch and a plurality of through holes of the insulating layer are matched in a plane.
The method of claim 11,

The sacrificial layer is made of any one of Ni, Cr, Al and combinations thereof, a method of manufacturing an electronic device that can be attached to the skin.
The method of claim 11, wherein the step of forming the semiconductor circuit unit,

Forming an active layer on the sacrificial layer;

Forming an insulating layer on the active layer; And

Forming a circuit element on the insulating layer, the circuit element comprising at least one of an electrode and an interconnect; a method of manufacturing an electronic device attachable to the skin.
Forming a sacrificial layer on the first substrate;

Forming a semiconductor circuit unit including a circuit element and a semiconductor element on the sacrificial layer;

Forming a flexible patch layer on the semiconductor circuit unit;

A step of contacting a mold including a groove to form a plurality of through holes to a flexible patch layer-a mold portion excluding the groove penetrates the flexible patch layer; And

A method of manufacturing an electronic device attachable to the skin, comprising the step of etching the sacrificial layer to manufacture the electronic device.
23. The method of claim 22, The step of forming the semiconductor circuit unit on the sacrificial layer,

Forming a circuit element on the sacrificial layer, the circuit element comprising at least one of an electrode and an interconnect;

Forming an insulating layer on the circuit element, wherein the insulating layer includes a plurality of through holes corresponding to a plurality of through holes of the flexible patch layer formed by the mold; And

And forming an active layer on the insulating layer.
23. The method of claim 22, The step of forming the semiconductor circuit unit on the sacrificial layer,

Forming an active layer on the sacrificial layer;

Forming an insulating layer on the active layer, wherein the insulating layer includes a plurality of through holes corresponding to a plurality of through holes of the flexible patch layer formed by the mold; And

Forming a circuit element on the insulating layer, the circuit element comprising at least one of an electrode and an interconnect; a method of manufacturing an electronic device attachable to the skin.
The method of claim 24,

Forming a polyamide layer on the sacrificial layer prior to forming the active layer; And

A method of manufacturing an electronic device attachable to skin, further comprising removing the polyamide layer after contacting the mold with the flexible patch layer.
The method of claim 25, wherein the step of forming the active layer,

And forming the active layer on the polyamide layer using a transfer structure.
The method of claim 24,

A method of manufacturing an electronic device attachable to skin, further comprising patterning the active layer such that the width of the active layer is smaller than the width of a through hole to be formed by the mold.
The method of claim 21, wherein the step of contacting the mold including the plurality of grooves to the flexible patch layer,

And heating the flexible patch layer.
The method of claim 21,

A method of manufacturing an electronic device that can be attached to the skin, characterized in that the surface of the mold is formed with a plurality of circular through-holes and a plurality of dumbbell-shaped through-holes and a groove capable of forming a combination thereof.
The method of claim 21,

A method of manufacturing an electronic device that can be attached to the skin, characterized in that a groove capable of forming a plurality of circular through-holes and a plurality of dumbbell-shaped through-holes is formed on the surface of the mold.
The method of claim 21,

Forming one or more alignment keys to align the penetrating mold,

The arrangement key is configured to have a height,

The mold, characterized in that it further comprises at least one key hole corresponding to the plane of the array key, a method of manufacturing an electronic device that can be attached to the skin.
The method of claim 21,

Method of manufacturing an electronic device that can be attached to the skin, characterized in that the width of the groove forming the through-hole is less than 60μm.
The method of claim 21, wherein the step of forming the flexible patch layer,

Forming a third flexible layer having a third elastic modulus on the semiconductor circuit unit; And

Forming a fourth flexible layer having a fourth elastic modulus on the third flexible layer,

The fourth modulus of elasticity is characterized in that lower than the third modulus of elasticity, a method of manufacturing an electronic device that can be attached to the skin.