WO2020113618A1 - 发光器件 - Google Patents

发光器件 Download PDF

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WO2020113618A1
WO2020113618A1 PCT/CN2018/120286 CN2018120286W WO2020113618A1 WO 2020113618 A1 WO2020113618 A1 WO 2020113618A1 CN 2018120286 W CN2018120286 W CN 2018120286W WO 2020113618 A1 WO2020113618 A1 WO 2020113618A1
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light
quantum dot
material layer
layer
light emitting
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French (fr)
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刘振
卓恩宗
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HKC Co Ltd
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HKC Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

Definitions

  • the present application relates to the field of display, in particular to a light emitting device.
  • Quantum dots are quasi-zero dimensional nanomaterials with a significant quantum size effect.
  • the emission spectrum of quantum dots can be controlled by changing the size of quantum dots. Therefore, quantum dot materials are widely used in the field of display.
  • the quantum dot light-emitting devices that emit white light mainly use the stack of quantum dot light-emitting layers, and white light is obtained by mixing colors, such as stacking of quantum dot light-emitting layers that emit red light, green light, and blue light, respectively, to produce white light.
  • stacking of quantum dot luminescent materials can produce white light, quantum dot materials have the problem of low luminous efficiency.
  • a light emitting device is provided.
  • a light-emitting device including:
  • a hole injection layer is formed on the anode
  • the light emitting layer includes N stacked light emitting units, each of the light emitting units includes a thermally activated delayed fluorescent material layer and a quantum dot material layer, and the light emitted by the thermally activated delayed fluorescent material layer and the quantum dot material
  • the light emitted by the layer is synthesized as white light, N ⁇ 1.
  • the light-emitting layer includes a plurality of light-emitting units, and each light-emitting unit includes a multilayer structure, including a thermally activated delayed fluorescent material layer and a quantum dot material layer, respectively, the light emitted by the thermally activated delayed fluorescent material layer and the quantum dot material layer
  • the light synthesizes white light, so that the light emitting device emits white light. Because the thermally activated delayed fluorescent material has high luminous efficiency, and the thermally activated delayed fluorescent material can not only emit light by itself, but also transfer energy to the quantum dot material layer to stimulate the quantum dot material to emit light, thereby improving the luminous efficiency of the light emitting device.
  • the thermally activated delayed fluorescent material layer includes a thermally activated delayed fluorescent material that emits blue light
  • the quantum dot material layer includes a first quantum dot material layer that emits yellow light
  • the first quantum dot material The layer is formed on the thermally activated delayed fluorescent material layer of the associated light emitting unit.
  • the thickness of the thermally activated delayed fluorescent material layer ranges from 10 nm to 60 nm.
  • the thickness of the first quantum dot material layer ranges from 50 nm to 250 nm.
  • the first quantum dot material layer is formed on a side of the thermally activated delayed fluorescent material layer of the associated light-emitting unit facing away from the hole transport layer.
  • the absolute value of the highest occupied molecular orbital energy level of the thermally activated delayed fluorescent material is greater than the absolute value of the valence band top level of the quantum dot material.
  • the absolute value of the lowest unoccupied molecular orbital energy level of the thermally activated delayed fluorescent material is greater than the absolute value of the conduction band bottom energy level of the quantum dot material.
  • the light emitting unit further includes a second quantum dot material layer that emits green light.
  • the second quantum dot material layer is formed on the side of the thermally activated delayed fluorescent material layer in the light-emitting unit that faces away from the first quantum dot material layer.
  • the second quantum dot material layer is formed on the side of the first quantum dot material layer in the associated light-emitting unit that faces the thermally activated delayed fluorescent material layer.
  • the hole transport layer includes a first silicon dioxide mesoporous frame and a hole transport material contained in the first silicon dioxide mesoporous frame.
  • regularly arranged mesopores are formed in the mesoporous silica frame, and the pore size of the mesopores ranges from 2 nm to 50 nm.
  • the hole transport material includes an aromatic tertiary amine.
  • the electron transport layer includes a second silica mesoporous frame and an electron transport material contained in the second silica mesoporous frame.
  • the quantum dot material layer includes a third silicon dioxide mesoporous frame and a quantum dot material contained in the third silicon dioxide mesoporous frame.
  • the light emitting device further includes a glass substrate.
  • the anode includes an indium tin oxide semiconductor film.
  • the thermally activated delayed fluorescent material layer is configured to transfer energy to the quantum dot material layer by fluorescence resonance energy transfer.
  • the emission spectrum of the thermally activated delayed fluorescent material layer overlaps with the absorption spectrum of the first quantum dot material.
  • a light-emitting device including:
  • a hole injection layer is formed on the anode
  • the light-emitting layer includes N stacked light-emitting units, N ⁇ 1, and each of the light-emitting units includes:
  • Thermally activated delayed fluorescent material layer including thermally activated delayed fluorescent material emitting blue light
  • the first quantum dot material layer including quantum dot material emitting yellow light, is formed on the thermally activated delayed fluorescent material layer of the associated light emitting unit;
  • the second quantum dot material layer including the quantum dot material that emits green light, is formed on the side of the thermally activated delayed fluorescent material layer in the associated light emitting unit that faces away from the first quantum dot material layer, the highest of the thermally activated delayed fluorescent material.
  • the absolute value of the occupied molecular orbital energy level is greater than the absolute value of the valence band top energy level of the quantum dot material, and the absolute value of the lowest unoccupied molecular orbital energy level of the thermally activated delayed fluorescent material is greater than that of the quantum dot material The absolute value of the bottom energy level of the conduction band.
  • the light-emitting layer includes a stacked thermally activated delayed fluorescent material layer, a first quantum dot material layer, and a second quantum dot material layer, wherein the thermally activated delayed fluorescent material layer emits blue light, and the first quantum dot material layer emits color Yellow light, the second quantum dot material layer emits green light.
  • the thermally activated delayed fluorescent material layer emits blue light while also transferring energy to the first quantum dot material layer and the second quantum dot light emitting layer, exciting the first quantum dot material layer to emit yellow light, and exciting the second quantum dot material layer to emit green Light, three light colors can be mixed to obtain a white with higher purity.
  • the absolute value of the highest occupied molecular orbital energy level of the thermally activated delayed fluorescent material is greater than the absolute value of the valence band top level of the quantum dot material, and the absolute value of the lowest unoccupied molecular orbital energy level of the thermally activated delayed fluorescent material is less than the quantum
  • the absolute value of the bottom energy level of the conduction band of the dot material can effectively transfer the energy of the thermally activated delayed fluorescent material layer to the quantum dot material layer, excite the quantum material layer to emit light, and make the light emitting device emit light more stable.
  • FIG. 1 is a schematic structural view of a light emitting device in an embodiment
  • FIG. 2 is a schematic diagram of the composition of the light-emitting layer in an embodiment
  • FIG. 3 is a schematic structural view of a light emitting device in another embodiment
  • FIG. 4 is a diagram showing the relationship between the energy levels of TADF materials and quantum dot materials in an embodiment
  • 5a is a schematic structural view of a light-emitting unit in an embodiment
  • 5b is a schematic structural view of a light-emitting unit in another embodiment
  • FIG. 6 is a partial schematic view of a mesoporous silica frame in an embodiment.
  • a light-emitting device includes an anode 100, a hole injection layer 200, a hole transport layer 300, a light-emitting layer 400, an electron transport layer 500, and an electron injection layer 600 that are sequentially stacked And the cathode 700;
  • the light-emitting layer 400 includes N stacked light-emitting units A, each light-emitting unit A includes a thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence, TADF) material layer and a quantum dot material layer, the TADF material layer emits light and quantum The light emitted by the point material layer synthesizes white light, N ⁇ 1.
  • TADF Thermally activated delayed fluorescence
  • the above light-emitting device can be connected to an external power source through the anode and the cathode.
  • the cathode electrons enter the light-emitting layer through the electron injection layer and the electron transport layer
  • the anode holes enter the light-emitting layer through the hole injection layer and the hole transport layer.
  • Recombination with holes in the light-emitting layer forms excitons, which makes the light-emitting layer in an excited state.
  • the process of returning the light-emitting layer from the excited state to the equilibrium state is a process of transition from a high energy level to a low energy level, thereby radiating light, and the color of the radiated light changes from the transition
  • the energy level difference is determined.
  • the excitons formed due to the excited state of the fluorescent material include 25% singlet excitons and 75% triplet excitons, of which only singlet excitons can emit fluorescence. If white light is generated only by stacking the quantum dot materials, since the light emitted by the quantum dot materials is fluorescence, the internal quantum efficiency of the quantum dot materials does not exceed 25%, resulting in low luminous efficiency of the quantum dot light-emitting materials.
  • a TADF material layer is provided, and electrons and holes are recombined in the TADF material layer to generate singlet excitons and triplet excitons. Among them, singlet excitons can directly transition to emit fluorescence, but triplet excitons cannot.
  • Direct transition radiates fluorescence, but it can be converted into singlet excitons by reverse intersystem crossing (RISC) process.
  • the converted singlet excitons can radiate fluorescence, making the TADF material with higher quantum efficiency, theory It can be close to 100%.
  • the quantum material layer is formed on the TADF material layer.
  • the TADF material itself can not only radiate light, but also transfer the exciton energy to the quantum material layer, and excite the quantum material layer to emit light.
  • the light emitted by the quantum material layer and the light emitted by the TADF material After mixing, white light is generated. Due to the high quantum efficiency in TADF materials, the use of TADF material layers can improve the overall luminous efficiency of the light emitting device.
  • the excitons that excite the quantum material layer to emit light come from two aspects. Some of the energy is excitons generated by the electron hole recombination transmitted to the quantum layer. The excitons can only partially radiate fluorescence and emit light. The efficiency is low, and the other part is to obtain singlet excitons in TADF materials and triplet excitons that can be converted into singlet excitons through the reverse intersystem crossing (RISC) process. The excitons can all emit fluorescence and emit light. The efficiency is higher, and by extracting the exciton energy from the TADF material layer, the luminous efficiency of the quantum layer can be improved, thereby further improving the luminous efficiency of the light emitting device.
  • RISC reverse intersystem crossing
  • the light emitting device further includes a substrate 800, which is generally a glass substrate. At least one of the two sides of the light-emitting layer 400 can transmit light.
  • the light-emitting device emits light from the anode side.
  • the anode is usually ITO (indium tin oxide semiconductor) because of the light-transmissive material. film.
  • the TADF material layer includes a blue light emitting TADF material
  • the quantum dot material layer includes a yellow light emitting first quantum dot material
  • the yellow light emitting first quantum dot material layer is formed on the blue light emitting TADF material
  • the combination of blue light and yellow light can produce white light.
  • the thickness of the thermally activated delayed fluorescent material layer is in the range of 10 nm to 60 nm
  • the thickness of the first quantum dot material layer is in the range of 50 nm to 250 nm. Within this range, it can produce stable white light and can be reduced as much as possible The thickness of the product.
  • the first quantum dot material layer is formed on the side of the TADF material layer facing away from the hole transport layer, that is, the first quantum dot material layer is closer to the cathode side, and the TADF material layer is closer to the anode side. As shown in FIG.
  • the light emitting device includes an anode 100, a hole injection layer 200, a hole transport layer 300, a TADF material layer 410 that emits blue light, and a first quantum dot that emits yellow light, which are sequentially stacked
  • the material layer 420, the electron transport layer 500, the electron injection layer 600, and the cathode 700, wherein the TADF material layer 410 emitting blue light and the first quantum dot material layer 420 emitting yellow light constitute the light emitting layer 400.
  • electrons enter the first quantum dot material layer 420 through the electron injection layer 600 and the electron transport layer 500, and part of the electrons entering the first quantum dot material layer 420 stay in the first quantum dot material layer 420, and a part Continue to transport to the TADF material layer 410; holes enter the TADF material layer 410 through the hole injection layer 200, the hole transport layer 300, part of the holes that enter the TADF material layer 410 stay in the TADF material layer 410, the other part continues to transport to The first quantum dot material layer 420.
  • the electrons and holes transported into the TADF material layer 410 recombine to generate excitons, which excite the TADF material to emit blue light.
  • the excitons that cause the first quantum material layer 420 to emit light come from two aspects.
  • the electrons and holes transmitted to the first quantum dot material layer 420 recombine to generate excitons, which excite the first quantum dot material layer 420 to generate Yellow light;
  • the TADF material layer 410 transfers its internal excitons to the first quantum dot material layer 420 through a fluorescence resonance (Forster) energy transfer method to excite the first quantum dot material to emit yellow light. It is understandable that the TADF material layer 410 transfers its internal excitons to the first quantum dot material layer 420 by means of fluorescence resonance (Forster) energy transfer.
  • the premise is that the emission spectrum of the TADF material overlaps with the absorption spectrum of the first quantum dot material section.
  • the blue light emitted by the TADF material layer 410 is mixed with the yellow light emitted by the first quantum dot material layer 420 to form white light, so that the light emitting device finally emits white light. Since more holes are injected from the anode than electrons from the cathode, it will cause the carrier recombination region to shift to the cathode side.
  • the TADF material can be more Effectively capture electrons and reduce the problem of migration in the composite region.
  • N may be greater than 1, that is, the light-emitting layer includes a plurality of light-emitting units A composed of the above-mentioned blue-emitting TADF material layer 410 and yellow-emitting first quantum dot material layer 420, and each light-emitting unit A is sequentially stacked Assuming that a light-emitting layer is formed, the number of light-emitting units A is determined according to specific needs, and adding light-emitting units can improve light-emitting brightness and efficiency.
  • FIG. 4 is a relationship diagram between the energy level of the TADF material and the energy level of the quantum dot material, wherein the highest occupied molecular orbital (HOMO) energy level of the TADF material e1
  • the absolute value is greater than the absolute value of the valence band top energy level e3 of the quantum dot material, and the absolute value of the lowest unoccupied molecular orbital (LUMO) energy level of the TADF material e2 is greater than the conduction band bottom of the quantum dot material
  • the absolute value of energy level e4 is a relationship diagram between the energy level of the TADF material and the energy level of the quantum dot material, wherein the highest occupied molecular orbital (HOMO) energy level of the TADF material e1
  • the absolute value is greater than the absolute value of the valence band top energy level e3 of the quantum dot material
  • the absolute value of the lowest unoccupied molecular orbital (LUMO) energy level of the TADF material e2 is greater than the
  • the LUMO energy level of the TADF material is lower than the bottom energy level of the conduction band of the quantum dot material, which is conducive to the effective transmission of electrons (filled circles in FIG. 4) from the quantum dot material layer to the TADF material layer; the HOMO of the TADF material The energy level is lower than the bottom energy level of the valence band of the quantum dot material, which is conducive to the effective transmission of holes (open circles in FIG. 4) from the activated delayed fluorescent material layer to the quantum dot material layer, so that both the TADF material layer and the quantum dot material layer Carriers recombine to make each layer of material emit light, and finally mix to form white light.
  • the quantum dot material layer also has carrier recombination, most of the carriers flow to the TADF material layer.
  • the composite effect in the TADF material layer is much greater than that in the quantum dot material layer.
  • the excitons generated by the recombination in the TADF material layer are transferred to the quantum material layer again. Since the efficiency of luminescence excited by the internal carrier recombination in the quantum material layer is low, in this embodiment, by setting the TADF material layer and passing energy The transfer method excites the quantum dot material layer to emit light, which can greatly enhance the luminous efficiency of the light emitting device.
  • the light-emitting unit A includes a second quantum dot material layer emitting green light in addition to a blue light-emitting TADF material layer 410 and a yellow light emitting first quantum dot material layer 420 430.
  • the second quantum dot material layer 430 is formed on the side of the blue-emitting TADF material layer 410 facing away from the first quantum dot material layer 420, that is, the second quantum dot material layer is located on the side close to the hole output layer.
  • FIG. 5a the light-emitting unit A includes a second quantum dot material layer emitting green light in addition to a blue light-emitting TADF material layer 410 and a yellow light emitting first quantum dot material layer 420 430.
  • the second quantum dot material layer 430 is formed on the side of the blue-emitting TADF material layer 410 facing away from the first quantum dot material layer 420, that is, the second quantum dot material layer is located on the side close to the hole output layer.
  • the green light-emitting second quantum dot material layer shape 430 is formed on the side of the yellow-emitting first quantum dot material layer 420 facing away from the blue-emitting TADF material layer 410 . Since the white light generated by the combination of yellow light and blue light is not high in purity, the purity of white light can be improved by adding a second quantum material layer that emits green light.
  • the hole transport layer 300 includes a first silicon dioxide mesoporous frame and a hole transport material contained in the first silicon dioxide mesoporous frame. As shown in FIG. 6, regularly arranged mesopores 61 are formed in the mesoporous silica frame 60, and the mesopore diameter ranges from 2 nm to 50 nm.
  • a first silicon dioxide mesoporous frame is formed on the hole injection layer 200, and then a hole transport material is filled in the mesoporous holes in the first silicon dioxide mesoporous frame to form a hole transport layer 300, the hole transport material has a strong hole transport performance, usually using aromatic tertiary amine as the hole transport material.
  • the electron transport layer 500 includes a second silicon dioxide mesoporous frame and an electron transport material contained in the second silicon dioxide mesoporous frame, which may specifically be formed on the light emitting layer 400 by the second silicon dioxide
  • the mesoporous frame is filled with electron transport material in the mesoporous holes in the second silicon dioxide mesoporous frame to form an electron transport layer 500.
  • the quantum dot material layer includes a third silicon dioxide mesoporous frame and a quantum dot material contained in the third silicon dioxide mesoporous frame.
  • Filling the material in the mesopores can on the one hand make the material evenly distributed, on the other hand, compared with the vapor deposition coating method to form the film layer, using the solution processing process to fill the material in the mesopores can reduce waste and improve the use of materials Rate, can effectively reduce costs.
  • the present application also discloses another light-emitting device, including an anode 100, a hole injection layer 200, a hole transport layer 300, a light-emitting layer 400, an electron transport layer 500, an electron injection layer 600, and a cathode 700 stacked in sequence;
  • the light-emitting layer 400 includes N stacked light emitting units A, each light emitting unit A includes a blue light emitting TADF material layer 410 and a yellow light emitting first quantum dot material layer 420 formed on the TADF material layer 410, and a TADF material layer
  • the second quantum dot material layer 430 on the side of 410 that is away from the first quantum dot material layer 420 and emitting green light, the absolute value of the highest occupied molecular orbital energy level of the TADF material is greater than the absolute value of the valence band bottom energy level of the quantum dot material Value, the absolute value of the lowest unoccupied molecular orbital energy level of the TADF material is greater than the absolute value of the con
  • the above light-emitting device emits blue light, yellow light, and green light through the TADF material layer 410, the first quantum material layer 420, and the second quantum material layer 430, respectively, and after mixing the three light colors, white light with higher purity can be formed.
  • the TADF material layer 410 since the TADF material layer 410 is used, the internal quantum efficiency of the TADF material is high, and the excitons in the TADF material layer 410 can be transferred to the quantum dot material layer to excite the quantum dot material layer to emit light, thereby greatly improving the luminous efficiency of the light emitting device .
  • the absolute value of the highest occupied molecular orbital energy level of the TADF material is greater than the absolute value of the valence band energy level of the quantum dot material layer, and the absolute value of the lowest unoccupied molecular orbital energy level of the TADF material is greater than the conduction band energy of the quantum dot material layer
  • the absolute value of the level is conducive to the transport of carriers, so that the carriers are fully recombined in the light-emitting layer, which further improves the light-emitting efficiency of the light-emitting device.

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Abstract

本申请涉及一种发光器件，包括依次叠设的阳极、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层及阴极，其中，发光层包括N个叠设的发光单元，各发光单元包括热激活延迟荧光材料层和量子点材料层，热激活延迟荧光材料层发射的光与量子点材料层发射的光合成白光。

Description

发光器件
相关申请
本申请要求于2018年12月04日提交中国专利局的，申请号为201811474938.1、申请名称为“发光器件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示领域，尤其涉及一种发光器件。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
量子点(Quantum Dot)是准零维纳米材料，具有显著的量子尺寸效应，量子点的发光光谱可以通过改变量子点的尺寸来控制，因此量子点材料被广泛应用于显示领域。目前，发射白光的量子点发光器件主要是采用量子点发光层的堆叠，通过混色获取白光，如分别发射红光、绿光、蓝光的量子点发光层堆叠可产生白光。采用量子点发光材料堆叠虽可产生白光，但是量子点材料具有发光效率较低的问题。
申请内容
根据本申请的各种实施例提供一种发光器件。
一种发光器件，包括：
阳极；
空穴注入层，形成于所述阳极上；
空穴传输层，形成于所述空穴注入层上；
发光层，形成于所述空穴传输层上；
电子传输层，形成于所述发光层上；
电子注入层，形成于所述电子传输层上；以及
阴极，形成于所述电子注入层上；
其中，所述发光层包括N个叠设的发光单元，各所述发光单元包括热激活延迟荧光材料层和量子点材料层，所述热激活延迟荧光材料层发射的光与所述量子点材料层发射的光合成白光，N≥1。
上述发光器件，发光层包含多个发光单元，各发光单元包含多层结构，分别包括热激活延迟荧光材料层和量子点材料层，热激活延迟荧光材料层发射的光与量子点材料层发射的光合成白光，从而使发光器件发射白光。由于热激活延迟荧光材料的发光效率较高，且热激活延迟荧光材料不仅自身能发射光，还能将能量传递至量子点材料层，激发量子点材料发光，从而提高发光器件的发光效率。
在其中一个实施例中，所述热激活延迟荧光材料层包括发射蓝光的热激活延迟荧光材料，所述量子点材料层包括发射黄光的第一量子点材料层，所述第一量子点材料层形成于所属发光单元的热激活延迟荧光材料层上。
在其中一个实施例中，所述热激活延迟荧光材料层的厚度范围为10nm～60nm。
在其中一个实施例中，所述第一量子点材料层的厚度范围为50nm～250nm。
在其中一个实施例中，所述第一量子点材料层形成于所属的发光单元的热激活延迟荧光材料层上背离所述空穴传输层的一侧。
在其中一个实施例中，所述热激活延迟荧光材料的最高占据态分子轨道能级的绝对值大于所述量子点材料的价带顶能级绝对值。
在其中一个实施例中，所述热激活延迟荧光材料的最低未占据态分子轨道能级的绝对值大于所述量子点材料的导带底能级绝对值。
在其中一个实施例中，所述发光单元还包括发射绿光的第二量子点材料 层。
在其中一个实施例中，所述第二量子点材料层形成于所所属发光单元中的热激活延迟荧光材料层上背离第一量子点材料层的一侧。
在其中一个实施例中，所述第二量子点材料层形成于所属发光单元中的第一量子点材料层上背热激活延迟荧光材料层的一侧。
在其中一个实施例中，所述空穴传输层包括第一二氧化硅介孔框架和容纳于所述第一二氧化硅介孔框架内的空穴传输材料。
在其中一个实施例中，所述二氧化硅介孔框架内形成有规则排布的介孔，所述介孔的孔径范围为2nm～50nm。
在其中一个实施例中，所述空穴传输材料包括芳香叔胺。
在其中一个实施例中，所述电子传输层包括第二二氧化硅介孔框架和容纳于所述第二二氧化硅介孔框架内的电子传输材料。
在其中一个实施例中，所述量子点材料层包括第三二氧化硅介孔框架和容纳于所述第三二氧化硅介孔框架内的量子点材料。
在其中一个实施例中，所述发光器件还包括玻璃基板。
在其中一个实施例中，所述阳极包括铟锡氧化物半导体薄膜。
在其中一个实施例中，所述热激活延迟荧光材料层设置为通过荧光共振能量转移方式将能量传递给所述量子点材料层。
在其中一个实施例中，所述热激活延迟荧光材料层的发射光谱与所述第一量子点材料的吸收光谱有重叠部分。
一种发光器件，包括：
阳极；
空穴注入层，形成于所述阳极上；
空穴传输层，形成于所述空穴注入层上；
发光层，形成于所述空穴传输层上；
电子传输层，形成于所述发光层上；
电子注入层，形成于所述电子传输层上；以及
阴极，形成于所述电子注入层上；
其中，所述发光层包括N个叠设的发光单元，N≥1，各所述发光单元包括：
热激活延迟荧光材料层，包括发射蓝光的热激活延迟荧光材料；
第一量子点材料层，包括发射黄光的量子点材料，形成于所属发光单元的热激活延迟荧光材料层上；以及
第二量子点材料层，包括发射绿光的量子点材料，形成于所属发光单元中的热激活延迟荧光材料层上背离第一量子点材料层的一侧，所述热激活延迟荧光材料的最高占据态分子轨道能级的绝对值大于所述量子点材料的价带顶能级绝对值，所述热激活延迟荧光材料的最低未占据态分子轨道能级的绝对值大于所述量子点材料的导带底能级绝对值。
上述发光器件，其发光层包含叠设的热激活延迟荧光材料层、第一量子点材料层和第二量子点材料层，其中热激活延迟荧光材料层发射蓝光，第一量子点材料层发色黄光，第二量子点材料层发射绿光。热激活延迟荧光材料层发射蓝光的同时还可将能量传递至第一量子点材料层和第二量子点发光层，激发第一量子点材料层发射黄光，激发第二量子点材料层发射绿光，三种光色混合可得到纯度较高的白色。同时，热激活延迟荧光材料的最高占据态分子轨道能级的绝对值大于量子点材料的价带顶能级绝对值，热激活延迟荧光材料的最低未占据态分子轨道能级的绝对值小于量子点材料的导带底能级绝对值，可使热激活延迟荧光材料层的能量有效的传递给量子点材料层，激发量子材料层发光，使发光器件发光更为稳定。
附图说明
为了更好地描述和说明这里公开的那些申请的实施例和/或示例，可以参考一副或多副附图。用于描述附图的附加细节或示例不应当被认为是对所公开的申请、目前描述的实施例和/或示例以及目前理解的这些申请的最佳模式中的任何一者的范围的限制。
图1为一实施例中发光器件结构示意图；
图2为一实施例中发光层结构组成示意图；
图3为另一实施例中发光器件结构示意图；
图4为一实施例中TADF材料与量子点材料能级关系图；
图5a为一实施例中发光单元结构示意图；
图5b为另一实施例中发光单元结构示意图；
图6为一实施例中二氧化硅介孔框架局部示意图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
为了彻底理解本申请，将在下列的描述中提出详细步骤以及结构，以便阐释本申请提出的技术方案。本申请的较佳实施例详细描述如下，然而除了这些详细描述外，本申请还可以具有其他实施方式。
如图1和图2所示，在一实施例中，发光器件包括依次叠设的阳极100、空穴注入层200、空穴传输层300、发光层400、电子传输层500、电子注入层600和阴极700；发光层400包括N个叠设的发光单元A，各发光单元A包括热激活延迟荧光(Thermally Activated Delayed Fluorescence，TADF)材料层和量子点材料层，TADF材料层发射的光与量子点材料层发射的光合成白光，N≥1。
上述发光器件，通过阳极和阴极可连接外部电源，接通电源后，阴极电 子通过电子注入层和电子传输层进入发光层，阳极空穴通过空穴注入层和空穴传输层进入发光层，电子和空穴在发光层复合形成激子，使发光层处于激发态，发光层从激发态恢复至平衡态的过程是从高能级跃迁至低能级的过程，从而辐射发光，辐射光的颜色由跃迁能级差决定。由于荧光材料的激发态形成的激子包含25％的单线态激子和75％的三线态激子，其中，只有单线态激子可辐射荧光。若仅通过量子点材料叠设产生白光，由于量子点材料发射的光为荧光，因此量子点材料的内量子效率不超过25％，造成量子点发光材料的发光效率低。在本实施例中，设置TADF材料层，电子和空穴在TADF材料层中复合后产生单线态激子和三线态激子，其中，单线态激子可直接跃迁发射荧光，三线态激子不能直接跃迁辐射荧光，但是可以通过反向系间窜越(reverse intersystem crossing，RISC)过程转化为单线态激子，转化后的单线态激子可辐射荧光，使得TADF材料内量子效率较高，理论下可接近100％。同时，量子材料层形成于TADF材料层上，TADF材料自身不仅能辐射光线，还能将激子能量传递至量子材料层，激发量子材料层发光，量子材料层发射的光与TADF材料发射的光混合后即可生成白光。由于TADF材料内量子效率较高，使用TADF材料层，可整体提高发光器件的发光效率。同时，在量子材料层中，激发量子材料层发光的激子来源于两方面，一部分能量是传输至量子层中的电子空穴复合生成的激子，该激子只能部分可辐射荧光，发光效率较低，而另一部分是获取TADF材料中的单线态激子以及可通过反向系间穿越(RISC)过程转化为单线态激子的三线态激子，该激子可全部辐射荧光，发光效率较高，通过从TADF材料层中获取激子能量，可提高量子层的发光效率，从而进一步提高发光器件的发光效率。
在一实施例中，如图1所示，发光器件还包括基板800，一般为玻璃基板。发光层400两侧的至少其中一侧可透光，在本实施例中，发光器件从其阳极侧发射光线，对应的，阳极因为可透光材料，通常可为ITO(铟锡氧化物半导体)薄膜。
在一实施例中，TADF材料层包括发射蓝光的TADF材料，量子点材料 层包括发射黄光的第一量子点材料，发射黄光的第一量子点材料层形成于发射蓝光的TADF材料上，蓝光与黄光结合，可产生白光。在一实施例中，热激活延迟荧光材料层的厚度范围为10nm～60nm，第一量子点材料层的厚度范围为50nm～250nm，在此范围内，既能产生稳定的白光，也能尽量降低产品的厚度。
在一实施例中，上述第一量子点材料层形成于TADF材料层上背离空穴传输层的一侧，即第一量子点材料层更靠近阴极侧，TADF材料层更靠近阳极侧。如图3所示，当N＝1时，发光器件包括依次叠设的阳极100、空穴注入层200、空穴传输层300、发射蓝光的TADF材料层410、发射黄光的第一量子点材料层420、电子传输层500、电子注入层600和阴极700，其中，发射蓝光的TADF材料层410和发射黄光的第一量子点材料层420构成发光层400。在本实施例中，电子通过电子注入层600、电子传输层500进入第一量子点材料层420，进入第一量子点材料层420中的电子一部分滞留于第一量子点材料层420内，一部分继续传输至TADF材料层410；空穴通过空穴注入层200、空穴传输层300进入TADF材料层410，进入TADF材料层410的空穴一部分滞留于TADF材料层410内，另一部分继续传输至第一量子点材料层420。传输至TADF材料层410中的电子和空穴复合产生激子，激发TADF材料发射蓝光。而致使第一量子材料层420发光的激子来源于两个方面，一方面是传输至第一量子点材料层420中的电子和空穴复合产生激子，激发第一量子点材料层420产生黄光；另一方面是TADF材料层410通过荧光共振(Forster)能量转移方式，将其内部激子转移至第一量子点材料层420，激发第一量子点材料发射黄光。可以理解的，TADF材料层410通过荧光共振(Forster)能量转移方式将其内部激子转移至第一量子点材料层420的前提为TADF材料的发射光谱与第一量子点材料的吸收光谱有重叠部分。TADF材料层410发射的蓝光与第一量子点材料层420发射的黄色混色后形成白光，致使发光器件最终发出白光。由于从阳极注入的空穴通常比从阴极注入的电子要多，会导致载流子复合区域往阴极侧偏移，在本方案中，通过将TADF 材料层410设置在阳极侧，TADF材料可以更有效地俘获电子，减弱复合区偏移问题。在其他实施例中，N可大于1，即发光层包含多个由上述发射蓝光的TADF材料层410和发射黄光的第一量子点材料层420构成的发光单元A，各发光单元A依次叠设形成发光层，发光单元A的数量根据具体需要确定，增加发光单元，可提高发光亮度和效率。
在一实施例中，如图4所示为TADF材料的能级与量子点材料的能级的关系图，其中，TADF材料的最高占据态分子轨道(highest occupied molecular orbital，HOMO)能级e1的绝对值大于量子点材料的价带顶能级e3的绝对值，TADF材料的最低未占据态分子轨道(lowest unoccupied molecular or-bital,LUMO)能级e2的绝对值大于量子点材料的导带底能级e4的绝对值。在本实施例中，TADF材料的LUMO能级低于量子点材料导带底能级，有利于电子(图4中实心圆)有效地从量子点材料层传输到TADF材料层；TADF材料的HOMO能级低于量子点材料价带底能级，有利于空穴(图4中空心圆)有效地从激活延迟荧光材料层传输至量子点材料层，从而使得TADF材料层和量子点材料层均有载流子复合而使各层材料发光，最后混合形成白光。需要说明的是，虽然量子点材料层中也有载流子的复合作用，但是大部分载流子均流向TADF材料层，在TADF材料层的复合作用远大于在量子点材料层的复合作用，在TADF材料层中复合产生的激子部分又转移至量子材料层，由于在量子材料层内通过内部载流子复合激发发光的效率较低，在本实施例中，通过设置TADF材料层以及通过能量转移方式激发量子点材料层发光，可大大增强发光器件的发光效率。
在一实施例中，如图5a所示，发光单元A除包含发射蓝光的TADF材料层410和发射黄光的第一量子点材料层420外，还包含发射绿光的第二量子点材料层430，第二量子点材料层430形成于发射蓝光的TADF材料层410上背离第一量子点材料层420的一侧，即第二量子点材料层位于靠近空穴输出层的一侧。在另一实施例中，如图5b所示，发射绿光的第二量子点材料层形430成于发射黄色的第一量子点材料层420上背离发射蓝色的TADF材料 层410的一侧。由于黄光和蓝光结合生成的白光纯度不高，通过添加一层发射绿光的第二量子材料层，可以提高白光的纯度。
在一实施例中，空穴传输层300包括第一二氧化硅介孔框架和容纳于第一二氧化硅介孔框架内的空穴传输材料。如图6所示，二氧化硅介孔框架60内形成有规则排布的介孔61，介孔孔径范围为2nm～50nm。在本实施例中，在空穴注入层200上形成第一二氧化硅介孔框架，再在该第一二氧化硅介孔框架内的介孔内填充空穴传输材料以形成空穴传输层300，该空穴传输材料具有较强的空穴传输性能，通常使用芳香叔胺作为空穴传输材料。在一实施例中，电子传输层500包括第二二氧化硅介孔框架和容纳于第二二氧化硅介孔框架内的电子传输材料，具体可为在发光层400上形成第二二氧化硅介孔框架，再在该第二二氧化硅介孔框架内的介孔内填充电子传输材料以形成电子传输层500。在一实施例中，量子点材料层包括第三二氧化硅介孔框架和容纳于第三二氧化硅介孔框架内的量子点材料。将材料填充在介孔内，一方面可以使材料分布均匀，另一方面，相对于蒸镀镀膜方式形成膜层，利用溶液加工工艺使材料填充在介孔内，可以减少浪费，提高材料的利用率，能有效降低成本。
本申请还公开了另一种发光器件，包括依次叠设的阳极100、空穴注入层200、空穴传输层300、发光层400、电子传输层500、电子注入层600和阴极700；发光层400包括N个叠设的发光单元A，各发光单元A包括发射蓝光的TADF材料层410和形成于TADF材料层410上的发射黄光的第一量子点材料层420，以及形成于TADF材料层410上背离第一量子点材料层420的一侧的发射绿光的第二量子点材料层430，TADF材料的最高占据态分子轨道能级的绝对值大于量子点材料的价带底能级绝对值，TADF材料的最低未占据态分子轨道能级的绝对值大于量子点材料层的导带能级绝对值。
上述发光器件，通过TADF材料层410、第一量子材料层420、第二量子材料层430分别发射蓝光、黄光和绿光，三种光色混合后可形成纯度较高的白光。同时，由于使用TADF材料层410，TADF材料的内量子效率较高，且 TADF材料层410中的激子可转移至量子点材料层，激发量子点材料层发光，从而大大提高发光器件的发光效率。同时TADF材料的最高占据态分子轨道能级的绝对值大于量子点材料层的价带能级绝对值，TADF材料的最低未占据态分子轨道能级的绝对值大于量子点材料层的导带能级绝对值，有利于载流子的传输，使载流子在发光层中充分复合，进一步提高了发光器件的发光效率，其中，发光器件的发光过程已在上文详细分析，此处不再赘述。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (20)

  1. 一种发光器件，包括：
    阳极；
    空穴注入层，形成于所述阳极上；
    空穴传输层，形成于所述空穴注入层上；
    发光层，形成于所述空穴传输层上；
    电子传输层，形成于所述发光层上；
    电子注入层，形成于所述电子传输层上；以及
    阴极，形成于所述电子注入层上；
    其中，所述发光层包括N个叠设的发光单元，各所述发光单元包括热激活延迟荧光材料层和量子点材料层，所述热激活延迟荧光材料层发射的光与所述量子点材料层发射的光合成白光，N≥1。
  2. 如权利要求1所述的发光器件，其中，所述热激活延迟荧光材料层包括发射蓝光的热激活延迟荧光材料，所述量子点材料层包括发射黄光的第一量子点材料层，所述第一量子点材料层形成于所属发光单元的热激活延迟荧光材料层上。
  3. 如权利要求2所述的发光器件，其中，所述热激活延迟荧光材料层的厚度范围为10nm～60nm。
  4. 如权利要求2所述的发光器件，其中，所述第一量子点材料层的厚度范围为50nm～250nm。
  5. 如权利要求2所述的发光器件，其中，所述第一量子点材料层形成于所属的发光单元的热激活延迟荧光材料层上背离所述空穴传输层的一侧。
  6. 如权利要求1所述的发光器件，其中，所述热激活延迟荧光材料的最高占据态分子轨道能级的绝对值大于所述量子点材料的价带顶能级绝对值。
  7. 如权利要求1所述的发光器件，其中，所述热激活延迟荧光材料的最低未占据态分子轨道能级的绝对值大于所述量子点材料的导带底能级绝对 值。
  8. 如权利要求2所述的发光器件，其中，所述发光单元还包括发射绿光的第二量子点材料层。
  9. 如权利要求8所述的发光器件，其中，所述第二量子点材料层形成于所属发光单元中的热激活延迟荧光材料层上背离第一量子点材料层的一侧。
  10. 如权利要求8所述的发光器件，其中，所述第二量子点材料层形成于所属发光单元中的第一量子点材料层上背离热激活延迟荧光材料层的一侧。
  11. 如权利要求1所述的发光器件，其中，所述空穴传输层包括第一二氧化硅介孔框架和容纳于所述第一二氧化硅介孔框架内的空穴传输材料。
  12. 如权利要求11所述的发光器件，其中，所述二氧化硅介孔框架内形成有规则排布的介孔，所述介孔的孔径范围为2nm～50nm。
  13. 如权利要求11所述的发光器件，其中，所述空穴传输材料包括芳香叔胺。
  14. 如权利要求1所述的发光器件，其中，所述电子传输层包括第二二氧化硅介孔框架和容纳于所述第二二氧化硅介孔框架内的电子传输材料。
  15. 如权利要求1所述的发光器件，其中，所述量子点材料层包括第三二氧化硅介孔框架和容纳于所述第三二氧化硅介孔框架内的量子点材料。
  16. 如权利要求1所述的发光器件，所述发光器件还包括玻璃基板。
  17. 如权利要求1所述的发光器件，其中，所述阳极包括铟锡氧化物半导体薄膜。
  18. 如权利要求1所述的发光器件，其中，所述热激活延迟荧光材料层设置为通过荧光共振能量转移方式将能量传递给所述量子点材料层。
  19. 如权利要求2所述的发光器件，其中，所述热激活延迟荧光材料层的发射光谱与所述第一量子点材料的吸收光谱有重叠部分。
  20. 一种发光器件，包括：
    阳极；
    空穴注入层，形成于所述阳极上；
    空穴传输层，形成于所述空穴注入层上；
    发光层，形成于所述空穴传输层上；
    电子传输层，形成于所述发光层上；
    电子注入层，形成于所述电子传输层上；以及
    阴极，形成于所述电子注入层上；
    其中，所述发光层包括N个叠设的发光单元，N≥1，各所述发光单元包括：
    热激活延迟荧光材料层，包括发射蓝光的热激活延迟荧光材料；
    第一量子点材料层，包括发射黄光的量子点材料，形成于所属发光单元的热激活延迟荧光材料层上；以及
    第二量子点材料层，包括发射绿光的量子点材料，形成于所属发光单元中的热激活延迟荧光材料层上背离第一量子点材料层的一侧，所述热激活延迟荧光材料的最高占据态分子轨道能级的绝对值大于所述量子点材料的价带顶能级绝对值，所述热激活延迟荧光材料的最低未占据态分子轨道能级的绝对值大于所述量子点材料的导带底能级绝对值。
PCT/CN2018/120286 2018-12-04 2018-12-11 发光器件 Ceased WO2020113618A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN111725410A (zh) * 2020-06-10 2020-09-29 武汉华星光电半导体显示技术有限公司 一种有机发光膜层、oled显示面板及显示装置
CN111785851B (zh) * 2020-07-16 2023-12-26 京东方科技集团股份有限公司 Woled器件及其制作方法和woled显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105870347A (zh) * 2016-04-15 2016-08-17 京东方科技集团股份有限公司 量子点发光器件及其制备方法、显示基板和显示装置
CN106229423A (zh) * 2016-07-01 2016-12-14 京东方科技集团股份有限公司 量子点电致发光器件、其制备方法及显示器件
US20170186986A1 (en) * 2015-12-10 2017-06-29 Research & Business Foundation Sungkyunkwan University Electroluminescent diode having delayed florescence quantum dot
CN106997926A (zh) * 2016-01-26 2017-08-01 昆山工研院新型平板显示技术中心有限公司 一种白光量子点电致发光器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107017325B (zh) * 2015-11-30 2020-06-23 隆达电子股份有限公司 量子点复合材料及其制造方法与应用
WO2017140159A1 (zh) * 2016-02-18 2017-08-24 京东方科技集团股份有限公司 量子点发光器件及其制备方法、显示基板和显示装置
CN106848080A (zh) * 2017-03-02 2017-06-13 瑞声光电科技(常州)有限公司 一种白光oled发光器件
CN107123725B (zh) * 2017-05-02 2019-08-23 武汉纺织大学 量子点薄膜、量子点白光led及其封装方法
CN107808931B (zh) * 2017-09-21 2021-08-24 华南师范大学 Tadf材料敏化的多层结构量子点发光二极管及其制法
CN108039417A (zh) * 2017-12-15 2018-05-15 京东方科技集团股份有限公司 一种电致发光器件及其制备方法、显示面板、显示装置
CN112585239A (zh) * 2018-04-11 2021-03-30 纳米技术有限公司 具有量子点和热活化延迟荧光分子的顶发射型印刷显示器
WO2019215540A1 (ja) * 2018-05-11 2019-11-14 株式会社半導体エネルギー研究所 有機化合物、発光素子、発光装置、電子機器、表示装置及び照明装置
CN109180853B (zh) * 2018-07-19 2021-01-15 京东方科技集团股份有限公司 Tadf聚合物配体、量子点材料和其制备方法及应用
US10797112B2 (en) * 2018-07-25 2020-10-06 Universal Display Corporation Energy efficient OLED TV

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170186986A1 (en) * 2015-12-10 2017-06-29 Research & Business Foundation Sungkyunkwan University Electroluminescent diode having delayed florescence quantum dot
CN106997926A (zh) * 2016-01-26 2017-08-01 昆山工研院新型平板显示技术中心有限公司 一种白光量子点电致发光器件
CN105870347A (zh) * 2016-04-15 2016-08-17 京东方科技集团股份有限公司 量子点发光器件及其制备方法、显示基板和显示装置
CN106229423A (zh) * 2016-07-01 2016-12-14 京东方科技集团股份有限公司 量子点电致发光器件、其制备方法及显示器件

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