WO2020110663A1 - Dispositif de traitement de substrat - Google Patents

Dispositif de traitement de substrat Download PDF

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Publication number
WO2020110663A1
WO2020110663A1 PCT/JP2019/043900 JP2019043900W WO2020110663A1 WO 2020110663 A1 WO2020110663 A1 WO 2020110663A1 JP 2019043900 W JP2019043900 W JP 2019043900W WO 2020110663 A1 WO2020110663 A1 WO 2020110663A1
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WIPO (PCT)
Prior art keywords
liquid
pipe
processing liquid
processing
substrate
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PCT/JP2019/043900
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English (en)
Japanese (ja)
Inventor
池田　昌秀
平井　信行
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020110663A1 publication Critical patent/WO2020110663A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B01D19/02—Foam dispersion or prevention
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D24/00—Filters comprising loose filtering material, i.e. filtering material without any binder between the individual particles or fibres thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D36/00—Filter circuits or combinations of filters with other separating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a substrate processing apparatus.
  • the substrate processing apparatus includes a nozzle that discharges the processing liquid toward the substrate, and a processing liquid supply pipe that supplies the processing liquid to the nozzle.
  • the substrate is, for example, a semiconductor wafer or a glass substrate for a liquid crystal display device.
  • the processing liquid is, for example, a resist liquid or a rinse liquid.
  • Substrate processing equipment may be equipped with a filter device in order to suppress the occurrence of high resistance defects.
  • the filter device is attached to the processing liquid supply pipe to separate bubbles from the processing liquid flowing through the processing liquid supply pipe.
  • a substrate processing apparatus that performs etching processing includes a filter device (see, for example, Patent Document 1).
  • the treatment liquid having a high dissolved oxygen concentration is supplied to the semiconductor wafer.
  • copper contained in the semiconductor wafer is oxidized to grow a copper oxide film, which causes a high resistance defect.
  • the copper contained in the semiconductor wafer is corroded to cause a high resistance defect.
  • the oxygen contained in the treatment liquid can be reduced and the occurrence of the high resistance defect can be suppressed.
  • An object of the present invention is to provide a substrate processing apparatus capable of improving the utilization efficiency of processing liquid.
  • the substrate processing apparatus of the present invention processes a substrate using a processing liquid.
  • the substrate processing apparatus includes a liquid storage unit, a first pipe, a filter unit, a processing liquid separation unit, a bubble removal line, and a second pipe.
  • the liquid storage section stores the processing liquid.
  • One end of the first pipe is connected to the liquid storage part, and the processing liquid is circulated.
  • the filter unit is attached to the first pipe to remove foreign matter from the processing liquid.
  • the treatment liquid separation unit stores bubbles of the treatment liquid and separates the treatment liquid from the bubbles.
  • the bubble removal line is connected to the filter unit to guide the bubbles from the filter unit to the treatment liquid separation unit.
  • the second pipe is connected to the processing liquid separation unit and guides the processing liquid separated from the bubbles to the liquid storage unit.
  • the substrate processing apparatus further comprises a pump.
  • the pump is attached to the first pipe and drives the processing liquid.
  • the pump is located upstream of the filter unit with respect to the direction in which the treatment liquid flows in the first pipe.
  • the filter unit includes a filter housing and a filter membrane.
  • the filter membrane is arranged inside the filter casing, and partitions the internal space of the filter casing into an upstream side chamber and a downstream side chamber.
  • the upstream chamber is located upstream of the downstream chamber with respect to the direction in which the processing liquid flows in the first pipe.
  • the filter housing has a bubble removal opening to which the bubble removal line connects. The bubble removal opening is provided on the upper wall of the filter housing, and connects the bubble removal line to one of the upstream chamber and the downstream chamber.
  • the filter unit includes a filter housing and a filter membrane.
  • the filter membrane is arranged inside the filter casing, and partitions the internal space of the filter casing into an upstream side chamber and a downstream side chamber.
  • the upstream chamber is located upstream of the downstream chamber with respect to the direction in which the processing liquid flows in the first pipe.
  • the bubble removal line includes an upstream line and a downstream line.
  • the filter housing has an upstream side bubble removing opening and a downstream side bubble removing opening.
  • the upstream line is connected to the upstream bubble removal opening.
  • the downstream line is connected to the downstream bubble removal opening.
  • the upstream side bubble removal opening is provided on the upper wall of the filter housing, and connects the upstream side line to the upstream side chamber.
  • the downstream bubble removal opening is provided on the upper wall of the filter housing, and connects the downstream line to the downstream chamber.
  • the processing liquid separation unit includes a processing liquid separation casing and a partition plate.
  • the partition plate is disposed inside the treatment liquid separation casing, and divides the internal space of the treatment liquid separation casing into an inflow chamber and an outflow chamber.
  • the partition plate has a first end and a second end opposite to the first end.
  • the processing liquid separation casing has a first wall, a second wall, a bubble inlet, and a liquid outlet.
  • the first wall connects with the first end of the partition plate.
  • the second wall faces the first wall.
  • the bubble removal line is connected to the bubble inlet.
  • the second pipe is connected to the liquid outlet.
  • the second end of the partition plate is separated from the second wall.
  • the foam inflow port communicates the inflow chamber with the foam removal line.
  • the liquid outlet communicates the outflow chamber with the second pipe. The distance from the second wall to the bubble inlet is longer than the distance from the second wall to the second end of the partition plate.
  • the first pipe includes a circulation pipe.
  • the circulation pipe circulates the processing liquid so that the processing liquid flowing from the liquid storage unit returns to the liquid storage unit.
  • the filter unit includes a first filter unit attached to the circulation pipe.
  • the bubble removal line includes a first bubble removal line connected to the first filter unit.
  • the first pipe includes a recovery pipe.
  • the processing liquid which has been used for processing the substrate, flows into the recovery pipe.
  • the recovery pipe returns the processing liquid to the liquid storage section.
  • the filter unit includes a second filter unit attached to the recovery pipe.
  • the bubble removal line includes a second bubble removal line connected to the second filter unit.
  • the liquid storage unit includes a processing liquid container and a heater.
  • the processing liquid container stores the processing liquid.
  • the heater heats the processing liquid container.
  • the substrate processing apparatus includes a plurality of towers.
  • the substrate processing apparatus also includes a fluid box provided for each of the plurality of towers.
  • the fluid boxes house the liquid storage portion, the first pipe, the filter portion, the treatment liquid separation portion, the bubble removal line, and the second pipe, respectively.
  • Each of the plurality of towers includes a plurality of processing tanks.
  • the plurality of processing tanks are arranged vertically. Each of the plurality of processing tanks accommodates the substrate. The substrate is processed in the processing bath.
  • the processing liquid is an etching liquid used for etching the substrate.
  • the composition of the treatment liquid contains phosphoric acid.
  • the treatment liquid has a foaming property.
  • the utilization efficiency of the processing liquid can be improved.
  • FIG. 1 is a diagram showing a substrate processing apparatus 1 according to this embodiment.
  • the substrate processing apparatus 1 includes a fluid box 2, a liquid storage unit 3, a circulation mechanism 4, a recovery mechanism 5, a first bubble removal line 6a, and a second bubble removal line 6b.
  • the processing liquid separation unit 7 and the return pipe 8 are provided.
  • the liquid reservoir 3 is housed in the fluid box 2.
  • the liquid storage unit 3 stores the processing liquid L1.
  • the processing liquid L1 is used for processing the substrate W.
  • the substrate W is a semiconductor wafer.
  • the processing liquid L1 is an etching liquid, and the substrate processing apparatus 1 performs etching processing.
  • the processing liquid L1 of the present embodiment is an etching liquid containing phosphoric acid in its composition.
  • the treatment liquid L1 of the present embodiment has foamability. In other words, the treatment liquid L1 is a liquid in which bubbles are easily generated.
  • the circulation mechanism 4 circulates the treatment liquid L1.
  • the circulation mechanism 4 includes a circulation pipe 41, a circulation pump 42, and a circulation filter unit 43.
  • the circulation pipe 41 is an example of the first pipe. A part of the circulation pipe 41 is housed in the fluid box 2. The circulation pipe 41 circulates the processing liquid L1. Specifically, the processing liquid L1 stored in the liquid storage unit 3 flows into the circulation pipe 41. The circulation pipe 41 circulates the processing liquid L1 so that the processing liquid L1 flowing from the liquid storage unit 3 returns to the liquid storage unit 3.
  • both ends of the circulation pipe 41 are connected to the liquid storage section 3.
  • the inflow ends into which the processing liquid L1 flows are arranged so as to be immersed in the processing liquid L1 stored in the liquid storage section 3.
  • the outflow ends from which the processing liquid L1 flows out are arranged so as to be immersed in the processing liquid L1 stored in the liquid storage section 3.
  • the circulation pump 42 is housed in the fluid box 2.
  • the circulation pump 42 is attached to the circulation pipe 41 and drives the processing liquid L1 by the pressure of the fluid.
  • the circulation pump 42 drives the processing liquid L1 by the pressure of the fluid so as to flow through the circulation pipe 41.
  • the circulation pump 42 is, for example, a bellows pump.
  • the circulation filter unit 43 is an example of a first filter unit.
  • the circulation filter unit 43 is housed in the fluid box 2.
  • the circulation filter unit 43 is attached to the circulation pipe 41 and removes foreign matter from the processing liquid L1.
  • the foreign matter includes bubbles of the processing liquid L1.
  • the bubbles of the treatment liquid L1 are likely to be generated in the circulation pump 42.
  • the circulation pump 42 is located upstream of the circulation filter unit 43 with respect to the direction in which the processing liquid L1 flows in the circulation pipe 41. Therefore, the circulation filter unit 43 can remove bubbles generated in the circulation pump 42 from the treatment liquid L1. Further, bubbles of the treatment liquid L1 may be generated in the circulation filter unit 43.
  • the circulation filter unit 43 removes bubbles generated in the circulation filter unit 43 from the treatment liquid L1.
  • the foreign matter may include particles removed from the substrate W, as described below.
  • the circulation filter unit 43 removes particles from the processing liquid L1.
  • the recovery mechanism 5 recovers the processing liquid L1 used for processing the substrate W.
  • the recovery mechanism 5 has a recovery pipe 51, a recovery pump 52, and a recovery filter section 53.
  • the recovery pipe 51 is an example of the first pipe. A part of the recovery pipe 51 is housed in the fluid box 2.
  • the recovery pipe 51 circulates the treatment liquid L1. Specifically, the processing liquid L1 used for processing the substrate W flows into the recovery pipe 51. Further, the recovery pipe 51 guides the inflowing processing liquid L1 to the liquid storage section 3.
  • one end of the recovery pipe 51 is connected to the liquid storage section 3.
  • the outflow ends through which the processing liquid L1 flows out are connected to the liquid storage section 3.
  • the outflow end of the circulation pipe 41 is arranged so as to be immersed in the treatment liquid L1 stored in the liquid storage portion 3. By immersing the outflow end of the circulation pipe 41 in the treatment liquid L1, it is possible to reduce the amount of bubbles of the treatment liquid L1 generated in the liquid storage section 3.
  • the recovery pump 52 is attached to the recovery pipe 51 and drives the processing liquid L1. Specifically, the recovery pump 52 drives the processing liquid L1 so that the processing liquid L1 flows through the recovery pipe 51.
  • the recovery pump 52 is arranged outside the fluid box 2.
  • the recovery pump 52 may be housed in the fluid box 2.
  • the recovery pump 52 is, for example, a diaphragm pump. However, the recovery pump 52 may be the same type of pump as the circulation pump 42.
  • the recovery filter unit 53 is an example of a second filter unit.
  • the recovery filter unit 53 is housed in the fluid box 2.
  • the recovery filter unit 53 is attached to the recovery pipe 51 and removes foreign matter from the processing liquid L1.
  • the foreign matter includes particles removed from the substrate W. Since the recovery mechanism 5 has the recovery filter section 53, it is possible to suppress the particles removed from the substrate W from flowing into the liquid storage section 3.
  • the foreign matter includes bubbles of the processing liquid L1.
  • the bubbles of the treatment liquid L1 are likely to be generated in the recovery pump 52.
  • the recovery pump 52 is located upstream of the recovery filter unit 53 with respect to the direction in which the processing liquid L1 flows in the recovery pipe 51. Therefore, the recovery filter unit 53 can remove bubbles generated in the recovery pump 52 from the treatment liquid L1. Further, the bubbles of the processing liquid L1 may be generated in the recovery filter unit 53.
  • the collection filter unit 53 removes bubbles generated in the collection filter unit 53 from the treatment liquid L1.
  • the recovery filter unit 53 removes particles having a relatively large size. Therefore, particles having a relatively small size may pass through the recovery filter section 53 and flow into the liquid storage section 3. As a result, particles having a relatively small size may flow into the circulation pipe 41.
  • the circulation filter unit 43 removes the particles that could not be removed by the recovery filter unit 53 from the treatment liquid L1.
  • the first bubble removal line 6 a is housed in the fluid box 2.
  • the first bubble removal line 6a is connected to the circulation filter unit 43 and guides bubbles of the treatment liquid L1 from the circulation filter unit 43 to the treatment liquid separation unit 7.
  • the bubbles of the treatment liquid L1 flow from the circulation filter unit 43 toward the treatment liquid separation unit 7 due to the pressure applied to the treatment liquid L1 by the circulation pump 42.
  • the treatment liquid L1 may be guided to the treatment liquid separation unit 7 via the first bubble removal line 6a.
  • gas may be introduced to the treatment liquid separation unit 7 via the first bubble removal line 6a.
  • the gas is, for example, air.
  • the second bubble removal line 6b is housed in the fluid box 2.
  • the second bubble removal line 6b is connected to the recovery filter unit 53 to guide the bubbles of the treatment liquid L1 from the recovery filter unit 53 to the treatment liquid separation unit 7.
  • the pressure applied to the treatment liquid L1 by the recovery pump 52 causes the bubbles of the treatment liquid L1 to flow from the recovery filter unit 53 toward the treatment liquid separation unit 7.
  • the treatment liquid L1 may be guided to the treatment liquid separation unit 7 via the second bubble removal line 6b.
  • gas may be guided to the treatment liquid separation unit 7 via the second bubble removal line 6b.
  • the gas is, for example, air.
  • the processing liquid separation unit 7 is housed in the fluid box 2.
  • the treatment liquid separation unit 7 stores bubbles of the treatment liquid L1 and separates the treatment liquid L1 from the bubbles. Specifically, the treatment liquid separation unit 7 stores bubbles of the treatment liquid L1 guided from the circulation filter unit 43 to the treatment liquid separation unit 7 via the first bubble removal line 6a. Further, the treatment liquid separation unit 7 stores the bubbles of the treatment liquid L1 guided from the recovery filter unit 53 to the treatment liquid separation unit 7 via the second bubble removal line 6b.
  • the return pipe 8 is an example of the second pipe.
  • the return pipe 8 is housed in the fluid box 2.
  • the return pipe 8 is connected to the processing liquid separation unit 7.
  • the return pipe 8 guides the processing liquid L1 separated from the bubbles by the processing liquid separation unit 7 to the liquid storage unit 3.
  • one end of the return pipe 8 is connected to the treatment liquid separation unit 7, and the other end of the return pipe 8 is connected to the liquid storage unit 3.
  • the processing liquid separation unit 7 is located above the liquid storage unit 3, and the processing liquid L1 is discharged from the processing liquid separation unit 7 to the liquid storage unit 3 by its own weight.
  • the treatment liquid L1 can be discharged from the treatment liquid separation unit 7 to the liquid storage unit 3 by the pressure applied to the treatment liquid L1 by the circulation pump 42.
  • the treatment liquid L1 can be discharged from the treatment liquid separation unit 7 to the liquid storage unit 3 by the pressure applied to the treatment liquid L1 by the recovery pump 52.
  • the other end of the return pipe 8 is arranged so as to be immersed in the processing liquid L1 stored in the liquid storage section 3.
  • the other end of the return pipe 8 By immersing the other end of the return pipe 8 in the processing liquid L1, it is possible to reduce the amount of bubbles of the processing liquid L1 generated in the liquid storage section 3.
  • the return pipe 8 may guide the treatment liquid L1 flowing into the treatment liquid separation unit 7 to the liquid storage unit 3 via the first bubble removal line 6a. Similarly, the return pipe 8 may guide the processing liquid L1 that has flowed into the processing liquid separation unit 7 via the second bubble removal line 6b to the liquid storage unit 3.
  • the substrate processing apparatus 1 of this embodiment has been described above with reference to FIG. According to this embodiment, the treatment liquid L1 separated from bubbles can be collected. Therefore, the utilization efficiency of the processing liquid L1 is improved.
  • the circulation filter unit 43 is attached to the circulation pipe 41. Therefore, the dissolved oxygen concentration of the processing liquid L1 supplied to the substrate W (semiconductor wafer) can be reduced as compared with the case where no filter device is attached to the circulation pipe 41. As a result, it is possible to suppress the occurrence of high resistance defects in the semiconductor wafer.
  • the processing liquid L1 separated from the bubbles is collected in the liquid storage section 3. Therefore, the dissolved oxygen concentration of the treatment liquid L1 stored in the liquid storage portion 3 can be reduced as compared with the case where bubbles of the treatment liquid L1 are collected in the liquid storage portion 3. As a result, it is possible to reduce the dissolved oxygen concentration of the processing liquid L1 supplied to the substrate W (semiconductor wafer) and suppress the occurrence of high resistance defects in the semiconductor wafer.
  • the liquid reservoir 3 has a processing liquid container 31 and a first heater 32.
  • the processing liquid container 31 stores the processing liquid L1.
  • the first heater 32 heats the processing liquid container 31.
  • the treatment liquid L1 is heated by the first heater 32 heating the treatment liquid container 31.
  • the temperature of the processing liquid L1 supplied to the substrate W can be maintained at a specified temperature higher than room temperature.
  • the specified temperature is a temperature at which a specified processing rate can be realized for the substrate W.
  • the specified temperature indicates a temperature at which a specified etching rate for the substrate W can be realized. Since the temperature of the processing liquid L1 is the specified temperature, the specified processing result can be achieved for the substrate W within the specified time. In the present embodiment, the specified etching amount for the substrate W can be achieved within the specified time.
  • the liquid storage unit 3 of this embodiment further includes a temperature detection sensor 33.
  • the temperature detection sensor 33 detects the temperature of the processing liquid L1 stored in the processing liquid container 31.
  • the first heater 32 is controlled based on the output of the temperature detection sensor 33.
  • the circulation mechanism 4 preferably has a second heater 44.
  • the second heater 44 heats the processing liquid L1 flowing through the circulation pipe 41. Since the second heater 44 heats the processing liquid L1, it becomes difficult for the temperature of the processing liquid L1 supplied to the substrate W to become lower than the specified temperature.
  • the second heater 44 is housed in the fluid box 2. Specifically, the second heater 44 is located upstream of the circulation pump 42 with respect to the direction in which the processing liquid L1 flows in the circulation pipe 41. Therefore, the second heater 44 heats the processing liquid L1 flowing into the circulation pipe 41.
  • the circulation mechanism 4 of this embodiment further includes a flow meter 45.
  • the flow meter 45 is housed in the fluid box 2.
  • the flow meter 45 measures the flow rate of the processing liquid L1 flowing through the circulation pipe 41.
  • the circulation pump 42 is controlled based on the output of the flow meter 45.
  • the substrate processing apparatus 1 further includes a degassing line 9.
  • a part of the degassing line 9 is housed in the fluid box 2.
  • the degassing line 9 is connected to the processing liquid separation unit 7 and discharges gas from the processing liquid separation unit 7 to the outside of the fluid box 2.
  • the gas vent line 9 discharges gas to the outside of the substrate processing apparatus 1.
  • the gas is generated by the processing liquid separation unit 7 separating the processing liquid L1 from bubbles.
  • the gas may be the gas introduced to the treatment liquid separation unit 7 via the first bubble removal line 6a. Further, the gas may be the gas introduced to the treatment liquid separation unit 7 via the second bubble removal line 6b.
  • the gas vent line 9 has a gas flow pipe 91.
  • a part of the gas flow pipe 91 is housed in the fluid box 2.
  • One end of the gas flow pipe 91 is connected to the processing liquid separation unit 7.
  • the gas flow pipe 91 is a tubular member, and the gas flow pipe 91 allows gas to flow.
  • the gas flows through the gas flow pipe 91 by the pressure applied to the treatment liquid L1 by the circulation pump 42. Further, gas flows through the gas flow pipe 91 by the pressure applied to the treatment liquid L1 by the recovery pump 52.
  • the substrate processing apparatus 1 further includes a stock solution supply mechanism 10.
  • the stock solution supply mechanism 10 supplies the stock solution L2 of the processing solution L1 to the solution storage unit 3.
  • the stock solution supply mechanism 10 includes a main pipe 11, a branch pipe 12, a first opening/closing valve 13, a second opening/closing valve 14, a flow meter 15, and a flow rate adjusting valve 16.
  • a part of the main pipe 11 is housed in the fluid box 2.
  • the main pipe 11 guides the stock solution L2 to the liquid storage section 3.
  • one end of the main pipe 11 is arranged so as to be immersed in the treatment liquid L1 stored in the liquid storage portion 3. By immersing one end of the main pipe 11 in the treatment liquid L1, it is possible to reduce the amount of bubbles of the treatment liquid L1 generated in the liquid storage section 3.
  • the first opening/closing valve 13 is housed in the fluid box 2.
  • the first opening/closing valve 13 is attached to the main pipe 11.
  • the first opening/closing valve 13 can be switched between an open state and a closed state.
  • the first opening/closing valve 13 is in the open state, the undiluted solution L2 is guided to the liquid storage section 3 through the main pipe 11.
  • the first on-off valve 13 is in the closed state, the first on-off valve 13 stops the flow of the stock solution L2 toward the liquid storage section 3 via the main pipe 11.
  • the branch pipe 12 is housed in the fluid box 2.
  • the branch pipe 12 branches from the main pipe 11 and guides the stock solution L2 to the liquid reservoir 3.
  • one end of the branch pipe 12 is arranged so as to be immersed in the treatment liquid L1 stored in the liquid storage portion 3. By immersing one end of the branch pipe 12 in the treatment liquid L1, it is possible to reduce the amount of bubbles of the treatment liquid L1 generated in the liquid storage section 3.
  • the second opening/closing valve 14 is housed in the fluid box 2.
  • the second opening/closing valve 14 is attached to the branch pipe 12.
  • the second opening/closing valve 14 can be switched between an open state and a closed state.
  • the stock solution L2 is guided to the liquid storage section 3 via the branch pipe 12.
  • the second opening/closing valve 14 stops the flow of the stock solution L2 toward the liquid storage section 3 via the branch pipe 12.
  • the flow meter 15 and the flow rate adjusting valve 16 are housed in the fluid box 2.
  • the flow meter 15 and the flow rate adjusting valve 16 are attached to the branch pipe 12.
  • the flow meter 15 measures the flow rate of the stock solution L2 flowing through the branch pipe 12.
  • the flow rate adjusting valve 16 adjusts the flow rate of the stock solution L2 flowing through the branch pipe 12. Specifically, the stock solution L2 flows through the branch pipe 12 at a flow rate corresponding to the opening degree of the flow rate adjusting valve 16.
  • the opening degree indicates the degree to which the flow rate adjusting valve 16 is open.
  • the flow rate adjusting valve 16 is controlled based on the output of the flow meter 15.
  • the substrate processing apparatus 1 further includes a diluent supply mechanism 20.
  • the diluent supply mechanism 20 supplies the diluent L3 to the liquid reservoir 3.
  • the diluent L3 is, for example, DIW (deionized water: deionized water).
  • the diluting solution L3 dilutes the stock solution L2.
  • the diluent supply mechanism 20 has a primary pipe 21, a diluent container 22, a secondary pipe 23, and a pump 24.
  • a part of the primary pipe 21 is housed in the fluid box 2.
  • the primary pipe 21 guides the diluent L3 to the diluent container 22.
  • the diluent container 22, the secondary pipe 23, and the pump 24 are housed in the fluid box 2.
  • the diluent container 22 stores the diluent L3.
  • the secondary pipe 23 is connected to the diluent container 22 and guides the diluent L3 to the liquid storage unit 3.
  • the pump 24 is attached to the secondary pipe 23. By driving the pump 24, the diluent L3 in the diluent container 22 flows toward the liquid reservoir 3.
  • one end of the secondary pipe 23 is arranged so as to be immersed in the treatment liquid L1 stored in the liquid storage section 3. By immersing one end of the secondary pipe 23 in the treatment liquid L1, it is possible to reduce the amount of bubbles of the treatment liquid L1 generated in the liquid reservoir 3.
  • the substrate processing apparatus 1 includes a control device 100.
  • the control device 100 controls the operation of each unit of the substrate processing apparatus 1.
  • the control device 100 includes a control unit 101 and a storage unit 102.
  • the control unit 101 has a processor.
  • the processor is, for example, a CPU (Central Processing Unit) or an MPU (Micro Processing Unit).
  • the processor may be a general purpose computer.
  • the storage unit 102 stores data and computer programs.
  • the storage unit 102 has a main storage device and an auxiliary storage device.
  • the main storage device is, for example, a semiconductor memory.
  • the auxiliary storage device is, for example, a hard disk drive or a semiconductor memory.
  • the auxiliary storage device may be composed of a hard disk drive and a semiconductor memory.
  • the storage unit 102 may include removable media.
  • the processor of the control unit 101 executes the computer program stored in the storage unit 102 to control the operation of each unit of the substrate processing apparatus 1.
  • the processor of the control unit 101 includes a circulation pump 42, a recovery pump 52, a first heater 32, a second heater 44, a first opening/closing valve 13, a second opening/closing valve 14, a flow rate adjusting valve 16, and a pump 24.
  • the processor of the control unit 101 controls the operation of the circulation pump 42 based on the output of the flow meter 45.
  • the processor of the control unit 101 controls the temperature of the first heater 32 based on the output of the temperature detection sensor 33.
  • the processor of the control unit 101 controls the opening degree of the flow rate adjusting valve 16 based on the output of the flow meter 15.
  • FIG. 2 is a diagram showing the circulation filter unit 43 and the first bubble removal line 6a in the present embodiment.
  • the circulation filter unit 43 has a filter membrane 401, an upstream chamber 402, and a downstream chamber 403.
  • the first bubble removal line 6a has an upstream line 61a and a downstream line 62a.
  • the filter film 401 removes foreign matter from the processing liquid L1.
  • the filter film 401 has a mesh shape.
  • the upstream chamber 402 and the downstream chamber 403 are opposed to each other with the filter membrane 401 interposed therebetween.
  • the upstream chamber 402 is located upstream of the downstream chamber 403 with respect to the direction in which the processing liquid L1 flows in the circulation pipe 41.
  • the upstream line 61a is connected to the circulation filter unit 43 to guide bubbles of the processing liquid L1 from the upstream chamber 402 to the processing liquid separating unit 7.
  • the treatment liquid L1 may be introduced to the treatment liquid separation unit 7 via the upstream line 61a.
  • the gas may be guided to the treatment liquid separation unit 7 via the upstream line 61a.
  • the downstream line 62a is connected to the circulation filter unit 43 to guide bubbles of the processing liquid L1 from the downstream chamber 403 to the processing liquid separating unit 7.
  • the treatment liquid L1 may be guided to the treatment liquid separation unit 7 via the downstream line 62a.
  • the gas may be guided to the treatment liquid separation unit 7 via the downstream line 62a.
  • the bubbles of the treatment liquid L1, the treatment liquid L1, and the gas may be collectively referred to as “bubbles of the treatment liquid L1”.
  • the upstream line 61a has an upstream flow pipe 611a and a flow rate adjusting valve 612a.
  • the upstream distribution pipe 611a is a tubular member. One end of the upstream flow pipe 611a is connected to the circulation filter unit 43.
  • the upstream circulation pipe 611a circulates bubbles or the like of the treatment liquid L1.
  • the flow rate adjusting valve 612a is attached to the upstream flow pipe 611a and adjusts the flow rate of bubbles or the like of the processing liquid L1 flowing through the upstream flow pipe 611a. Specifically, bubbles of the treatment liquid L1 flow through the upstream flow pipe 611a at a flow rate corresponding to the opening degree of the flow rate adjustment valve 612a.
  • the opening degree of the flow rate adjusting valve 612a is controlled by the control device 100 (processor of the control unit 101) described with reference to FIG.
  • the downstream line 62a has a downstream flow pipe 621a and a flow rate adjustment valve 622a.
  • the downstream side distribution pipe 621a is a tubular member. One end of the downstream flow pipe 621a is connected to the circulation filter unit 43.
  • the downstream side circulation pipe 621a circulates bubbles and the like of the treatment liquid L1.
  • the flow rate adjusting valve 622a is attached to the downstream flow pipe 621a and adjusts the flow rate of bubbles or the like of the processing liquid L1 flowing through the downstream flow pipe 621a. Specifically, bubbles of the treatment liquid L1 flow through the downstream flow pipe 621a at a flow rate corresponding to the opening of the flow rate adjustment valve 622a.
  • the opening degree of the flow rate adjusting valve 622a is controlled by the control device 100 (processor of the control unit 101) described with reference to FIG.
  • FIG. 3 is a diagram showing the recovery filter unit 53 and the second bubble removal line 6b in the present embodiment.
  • the recovery filter unit 53 has a filter membrane 501, an upstream chamber 502, and a downstream chamber 503.
  • the second bubble removal line 6b has an upstream line 61b and a downstream line 62b.
  • the filter film 501 removes foreign matter from the processing liquid L1.
  • the filter film 501 has a mesh shape.
  • the upstream chamber 502 and the downstream chamber 503 face each other with the filter film 501 interposed therebetween.
  • the upstream chamber 502 is located upstream of the downstream chamber 503 with respect to the direction in which the processing liquid L1 flows in the recovery pipe 51.
  • the upstream line 61b is connected to the recovery filter section 53 to guide bubbles and the like of the processing liquid L1 from the upstream chamber 502 to the processing liquid separating section 7.
  • the downstream line 62b is connected to the recovery filter section 53 to guide bubbles and the like of the processing liquid L1 from the downstream chamber 503 to the processing liquid separating section 7.
  • the upstream line 61b has an upstream flow pipe 611b and a flow rate adjusting valve 612b.
  • the upstream distribution pipe 611b is a tubular member. One end of the upstream distribution pipe 611b is connected to the recovery filter section 53.
  • the upstream circulation pipe 611b allows the bubbles and the like of the processing liquid L1 to flow therethrough.
  • the flow rate adjustment valve 612b is attached to the upstream flow pipe 611b and adjusts the flow rate of bubbles or the like of the processing liquid L1 flowing through the upstream flow pipe 611b. Specifically, bubbles of the treatment liquid L1 flow through the upstream flow pipe 611b at a flow rate corresponding to the opening degree of the flow rate adjustment valve 612b.
  • the opening degree of the flow rate adjusting valve 612b is controlled by the control device 100 (processor of the control unit 101) described with reference to FIG.
  • the downstream line 62b has a downstream distribution pipe 621b and a flow rate adjusting valve 622b.
  • the downstream distribution pipe 621b is a tubular member. One end of the downstream flow pipe 621b is connected to the recovery filter unit 53.
  • the downstream circulation pipe 621b circulates bubbles or the like of the treatment liquid L1.
  • the flow rate adjustment valve 622b is attached to the downstream flow pipe 621b and adjusts the flow rate of bubbles or the like of the processing liquid L1 flowing through the downstream flow pipe 621b. Specifically, bubbles of the treatment liquid L1 flow through the downstream flow pipe 621b at a flow rate corresponding to the opening of the flow rate adjustment valve 622b.
  • the opening degree of the flow rate adjusting valve 622b is controlled by the control device 100 (processor of the control unit 101) described with reference to FIG.
  • FIG. 4 is a diagram showing the configuration of the circulation filter unit 43 in this embodiment.
  • the circulation filter unit 43 further includes a housing 411 in addition to the filter membrane 401, the upstream chamber 402 and the downstream chamber 403.
  • the housing 411 is an example of a filter housing.
  • the filter membrane 401 is arranged inside the housing 411 and partitions the internal space of the housing 411 into an upstream chamber 402 and a downstream chamber 403.
  • the housing 411 has a processing liquid inlet 412 and a processing liquid outlet 413. Further, the housing 411 has an upper wall 411a.
  • the processing liquid inlet 412 is located upstream of the processing liquid outlet 413 with respect to the direction in which the processing liquid L1 flows through the circulation pipe 41.
  • the treatment liquid inflow port 412 is connected to the circulation pipe 41 so that the circulation pipe 41 communicates with the upstream chamber 402.
  • the treatment liquid outlet 413 is connected to the circulation pipe 41 to connect the circulation pipe 41 to the downstream chamber 403.
  • the processing liquid L1 flowing through the circulation pipe 41 flows into the upstream chamber 402 (inside the housing 411) via the processing liquid inlet 412, then passes through the filter membrane 401, and flows into the downstream chamber 403.
  • the processing liquid L1 that has flowed into the downstream chamber 403 flows out of the housing 411 (circulation pipe 41) via the processing liquid outlet 413.
  • the processing liquid inlet 412 and the processing liquid outlet 413 are arranged near the upper wall 411a.
  • the housing 411 further has an upstream bubble removal opening 405 and a downstream bubble removal opening 406.
  • the upstream defoaming opening 405 is connected to the upstream line 61a.
  • the downstream bubble removal opening 406 is connected to the downstream line 62a.
  • the upstream defoaming opening 405 is connected to the upstream flow pipe 611a.
  • the downstream bubble removal opening 406 is connected to the downstream flow pipe 621a.
  • bubbles and the like of the processing liquid L1 collect near the upper wall 411a.
  • the upstream defoaming opening 405 is provided in the upper wall 411a to connect the upstream chamber 402 to the upstream line 61a (upstream distribution pipe 611a).
  • the downstream bubble removal opening 406 is provided in the upper wall 411a and connects the downstream chamber 403 to the downstream line 62a (downstream distribution pipe 621a). Bubbles and the like of the treatment liquid L1 accumulated near the upper wall 411a flow into the upstream line 61a (upstream flow pipe 611a) from the upstream chamber 402 through the upstream bubble removal opening 405. Further, bubbles of the treatment liquid L1 accumulated near the upper wall 411a flow into the downstream line 62a (downstream distribution pipe 621a) from the downstream chamber 403 through the downstream bubble removal opening 406.
  • the circulation filter unit 43 has been described above with reference to FIG. According to the circulation filter unit 43 described with reference to FIG. 4, bubbles or the like of the processing liquid L1 can be guided to the processing liquid separating unit 7.
  • the structure of the recovery filter unit 53 is the same as that of the circulation filter unit 43, and therefore its explanation is omitted.
  • FIG. 5 is a top view showing the treatment liquid separation unit 7 in this embodiment.
  • the treatment liquid separating unit 7 includes a housing 71, a first connector 711, a second connector 712, a third connector 713, a fourth connector 714, a fifth connector 715, and a first connector 711. 6 connector 716.
  • the housing 71 is an example of a processing liquid separation housing.
  • the housing 71 has a rectangular parallelepiped shape, and has a first side wall 701, a second side wall 702, a third side wall 703, and a fourth side wall 704.
  • the first side wall 701 faces the second side wall 702, and the third side wall 703 faces the fourth side wall 704.
  • the third side wall 703 is connected to one end of the first side wall 701 and is connected to one end of the second side wall 702.
  • the fourth side wall 704 is connected to the other end of the first side wall 701 and is connected to the other end of the second side wall 702.
  • the first connector 711 projects from the housing 71.
  • the first connector 711 projects from the first side wall 701.
  • the first connector 711 is connected to the upstream line 61a of the first bubble removal line 6a.
  • the first connector 711 is connected to the upstream distribution pipe 611a.
  • the second connector 712 projects from the housing 71.
  • the second connector 712 projects from the first side wall 701.
  • the second connector 712 is connected to the downstream line 62a of the first bubble removal line 6a.
  • the second connector 712 is connected to the downstream distribution pipe 621a.
  • the third connector 713 projects from the housing 71.
  • the third connector 713 projects from the first side wall 701.
  • the third connector 713 is connected to the upstream line 61b of the second bubble removal line 6b.
  • the third connector 713 is connected to the upstream distribution pipe 611b.
  • the fourth connector 714 projects from the housing 71.
  • the fourth connector 714 projects from the first side wall 701.
  • the fourth connector 714 is connected to the downstream line 62b of the second bubble removal line 6b.
  • the fourth connector 714 is connected to the downstream distribution pipe 621b.
  • the fifth connector 715 projects from the housing 71.
  • the fifth connector 715 projects from the third side wall 703.
  • the fifth connector 715 is connected to the return pipe 8.
  • the sixth connector 716 protrudes from the housing 71.
  • the sixth connector 716 protrudes from the third side wall 703.
  • the sixth connector 716 is connected to the degassing line 9.
  • the sixth connector 716 is connected to the gas flow pipe 91.
  • the treatment liquid separation unit 7 further includes a partition plate 72, an inflow chamber 73, and an outflow chamber 74.
  • the partition plate 72 is arranged inside the housing 71 and partitions the internal space of the housing 71 into an inflow chamber 73 and an outflow chamber 74.
  • the first connector 711 to the fourth connector 714 face the inflow chamber 73.
  • the fifth connector 715 and the sixth connector 716 face the outflow chamber 74.
  • FIG. 6 is a side view showing the processing liquid separation unit 7 in this embodiment. Specifically, FIG. 6 shows a view of the treatment liquid separation unit 7 as seen from the first side wall 701 side. 6 shows a cross section of the first connector 711 to the fourth connector 714. As shown in FIG. 6, the first side wall 701 has a first foam inlet 711a, a second foam inlet 712a, a third foam inlet 713a, and a fourth foam inlet 714a.
  • the first bubble inlet 711a communicates the inflow chamber 73 described with reference to FIG. 5 with the outside of the housing 71.
  • the first connector 711 is provided at a position corresponding to the first bubble inflow port 711a. Therefore, the first bubble inlet 711a is connected to the upstream line 61a (upstream circulation pipe 611a) of the first bubble removal line 6a, and the inflow chamber 73 and the first bubble removal line described with reference to FIG.
  • the upstream side line 61a (upstream side distribution pipe 611a) of 6a is connected.
  • the second bubble inlet 712a communicates the inflow chamber 73 described with reference to FIG. 5 with the outside of the housing 71.
  • the second connector 712 is provided at a position corresponding to the second bubble inlet 712a. Therefore, the second bubble inlet 712a is connected to the downstream line 62a (downstream circulation pipe 621a) of the first bubble removal line 6a, and the inflow chamber 73 and the first bubble removal line described with reference to FIG.
  • the downstream side line 62a of 6a (downstream side distribution pipe 621a) is connected.
  • the third bubble inlet 713a connects the inflow chamber 73 described with reference to FIG. 5 to the outside of the housing 71.
  • the third connector 713 is provided at a position corresponding to the third bubble inflow port 713a. Therefore, the third bubble inlet 713a is connected to the upstream line 61b (upstream circulation pipe 611b) of the second bubble removal line 6b, and the inflow chamber 73 and the second bubble removal line described with reference to FIG.
  • the upstream side line 61b (upstream side distribution pipe 611b) of 6b is connected.
  • the fourth bubble inlet 714a connects the inflow chamber 73 described with reference to FIG. 5 to the outside of the housing 71.
  • the fourth connector 714 is provided at a position corresponding to the fourth bubble inflow port 714a. Therefore, the fourth bubble inlet 714a is connected to the downstream line 62b (downstream circulation pipe 621b) of the second bubble removal line 6b, and the inflow chamber 73 and the second bubble removal line described with reference to FIG.
  • the downstream side line 62b of 6b (downstream side distribution pipe 621b) is connected.
  • FIG. 7 is a cross-sectional view showing the treatment liquid separation unit 7 in this embodiment. Specifically, FIG. 7 shows a cross section taken along line VII-VII of FIG. As shown in FIG. 7, the third side wall 703 has a liquid outlet 715a and a gas outlet 716a. The liquid outlet 715a and the gas outlet 716a communicate the outflow chamber 74 with the outside of the housing 71.
  • the fifth connector 715 described with reference to FIG. 5 is provided at a position corresponding to the liquid outlet 715a. Further, the sixth connector 716 described with reference to FIG. 5 is provided at a position corresponding to the gas outlet 716a. Therefore, the liquid outlet 715a is connected to the return pipe 8 to connect the outflow chamber 74 and the return pipe 8 to each other. Further, the gas outlet 716a is connected to the gas vent line 9 (gas distribution pipe 91), and connects the outflow chamber 74 and the gas vent line 9 (gas distribution pipe 91).
  • the housing 71 has an upper wall 705 and a lower wall 706 facing the upper wall 705.
  • the liquid outlet 715a is provided at a position closer to the lower wall 706 than the gas outlet 716a.
  • the upper wall 705 is an example of the first wall
  • the lower wall 706 is an example of the second wall.
  • the partition plate 72 has a first end 721 and a second end 722 opposite to the first end 721.
  • the first end 721 of the partition plate 72 is connected to the upper wall 705.
  • the second end 722 of the partition plate 72 is separated from the lower wall 706.
  • the distance D1 from the lower wall 706 to the first bubble inlet 711a is longer than the distance D2 from the lower wall 706 to the second end 722 of the partition plate 72.
  • the distance from the lower wall 706 to the second bubble inlet 712a, the distance from the lower wall 706 to the third bubble inlet 713a, and the distance from the lower wall 706 to the fourth bubble inlet 714a are also the first bubble inlet 711a. Is longer than the distance D2.
  • the bubbles of the processing liquid L1 flowing into the inflow chamber 73 from the first bubble inflow port 711a to the fourth bubble inflow port 714a are stored in the inflow chamber 73.
  • the bubbles of the treatment liquid L1 are also stored in the outflow chamber 74 via the gap between the lower wall 706 and the second end 722 of the partition plate 72.
  • the bubbles of the processing liquid L1 are stored in the lower part of the internal space of the housing 71.
  • the bubbles of the processing liquid L1 are stored in the housing 71, and thus are separated into the processing liquid L1 and the gas.
  • the treatment liquid L1 separated from the bubbles flows into the return pipe 8 from the liquid outlet 715a and is collected in the liquid storage unit 3 described with reference to FIG.
  • the gas separated from the bubbles is located above the liquid surface of the treatment liquid L1 and flows into the gas vent line 9 (gas distribution pipe 91) via the gas outlet 716a.
  • the treatment liquid L1 may flow into the treatment liquid separation unit 7 (inflow chamber 73) via the upstream line 61a of the first bubble removal line 6a.
  • the processing liquid L1 passes through the gap between the lower wall 706 and the second end 722 of the partition plate 72 and flows into the return pipe 8 from the liquid outlet 715a.
  • the treatment liquid L1 passes through the downstream line 62a of the first bubble removal line 6a, the upstream line 61b of the second bubble removal line 6b, and the downstream line 62b of the second bubble removal line 6b into the treatment liquid separation unit 7 (inflow).
  • the processing liquid L1 flows into the chamber 73
  • the processing liquid L1 flows into the return pipe 8 from the liquid outlet 715a.
  • the gas may flow into the treatment liquid separation unit 7 (inflow chamber 73) via the upstream line 61a of the first bubble removal line 6a.
  • the gas since the gas is lighter than the bubbles of the treatment liquid L1 and the treatment liquid L1, the gas flows into the treatment liquid separation unit 7 (inflow chamber 73) before the bubbles of the treatment liquid L1 and the treatment liquid L1.
  • the gas flowing into the inflow chamber 73 passes through the gap between the lower wall 706 and the second end 722 of the partition plate 72, and then flows into the gas vent line 9 (gas distribution pipe 91) from the gas outlet 716a.
  • Gas passes through the downstream line 62a of the first bubble removal line 6a, the upstream line 61b of the second bubble removal line 6b, and the downstream line 62b of the second bubble removal line 6b into the treatment liquid separation unit 7 (inflow chamber 73). Similarly, the gas flows into the degassing line 9 (gas distribution pipe 91) from the gas outlet 716a.
  • the processing liquid separation unit 7 has been described above with reference to FIGS. 5 to 7. According to the treatment liquid separation unit 7 described with reference to FIGS. 5 to 7, the upstream line 61a and the downstream line 62a of the first bubble removal line 6a, and the upstream line 61b of the second bubble removal line 6b and The treatment liquid L1 can be recovered from the bubbles of the treatment liquid L1 guided by the downstream line 62b.
  • the distance D1 from the lower wall 706 to the first bubble inlet 711a is longer than the distance D2 from the lower wall 706 to the second end 722 of the partition plate 72.
  • the distance from the lower wall 706 to the second bubble inlet 712a, the distance from the lower wall 706 to the third bubble inlet 713a, and the distance from the lower wall 706 to the fourth bubble inlet 714a are also the first bubble inlet 711a. Is longer than the distance D2. Therefore, it is possible to reduce the possibility that bubbles of the processing liquid L1 will flow into the degassing line 9.
  • FIG. 8 is a plan view showing the substrate processing apparatus 1 according to this embodiment.
  • the substrate processing apparatus 1 further includes a fluid cabinet 110, a plurality of fluid boxes 2, a plurality of towers TW, a plurality of load ports LP, an indexer robot IR, and a center robot CR.
  • a fluid cabinet 110 a plurality of fluid boxes 2
  • a plurality of towers TW a plurality of load ports LP
  • an indexer robot IR an indexer robot IR
  • a center robot CR a center robot CR.
  • the control device 100 controls the load port LP, the indexer robot IR, the center robot CR, and the processing unit 1A.
  • Each of the load ports LP accommodates a plurality of substrates W stacked.
  • the indexer robot IR carries the substrate W between the load port LP and the center robot CR.
  • the center robot CR transports the substrate W between the indexer robot IR and the tower TW (processing unit 1A).
  • Each of the processing units 1A discharges the processing liquid L1 onto the substrate W to process the substrate W.
  • the fluid cabinet 110 contains the stock solution L2 and the diluting solution L3.
  • the plurality of towers TW are arranged so as to surround the center robot CR in a plan view.
  • the substrate processing apparatus 1 includes four towers TW, but the number of towers TW is not limited to four.
  • the substrate processing apparatus 1 may include one tower TW.
  • the substrate processing apparatus 1 may include two towers TW, three towers TW, or five or more towers TW.
  • Each tower TW includes a plurality of processing units 1A stacked vertically.
  • each tower TW includes three processing units 1A, but the number of processing units 1A included in each tower TW is not limited to three.
  • Each tower TW may include one processing unit 1A.
  • each tower TW may include two processing units 1A or four or more processing units 1A.
  • a plurality of fluid boxes 2 are provided corresponding to a plurality of towers TW, respectively.
  • Each fluid box 2 supplies the processing liquid L1 to all the processing units 1A included in the corresponding tower TW.
  • the fluid cabinet 110 supplies the stock solution L2 and the diluting solution L3 to each fluid box 2.
  • FIG. 9 is a diagram showing the tower TW in the present embodiment. As shown in FIG. 9, the tower TW accommodates a part of the circulation pipe 41, a part of the recovery mechanism 5, and a plurality of processing units 1A.
  • Each processing unit 1A has a flow meter 111, a flow rate adjusting valve 112, an opening/closing valve 113, a liquid supply pipe 120, and a chamber 130.
  • the chamber 130 is an example of a processing tank.
  • the liquid supply pipe 120 circulates the processing liquid L1. Specifically, the liquid supply pipe 120 is connected to the circulation pipe 41 to guide the processing liquid L1 to the chamber 130.
  • the flow meter 111, the flow rate adjusting valve 112, and the opening/closing valve 113 are attached to the liquid supply pipe 120.
  • the flow rate adjusting valve 112 and the opening/closing valve 113 are controlled by the control device 100 (processor of the control unit 101).
  • the flow meter 111 measures the flow rate of the processing liquid L1 flowing through the liquid supply pipe 120.
  • the flow rate adjusting valve 112 adjusts the flow rate of the processing liquid L1 flowing through the liquid supply pipe 120. Specifically, the processing liquid L1 flows through the liquid supply pipe 120 at a flow rate corresponding to the opening degree of the flow rate adjusting valve 112. In the present embodiment, the flow rate adjusting valve 112 is controlled based on the output of the flow meter 111.
  • the on-off valve 113 can be switched between an open state and a closed state.
  • the open/close valve 113 is in the open state, the processing liquid L1 is guided to the chamber 130 via the liquid supply pipe 120.
  • the open/close valve 113 is in the closed state, the open/close valve 113 stops the flow of the processing liquid L1 toward the chamber 130 via the liquid supply pipe 120.
  • the recovery mechanism 5 further includes a recovery container 54.
  • the recovery pipe 51 has a primary pipe 511 and a secondary pipe 512.
  • the tower TW accommodates the primary pipe 511, a part of the secondary pipe 512, the recovery pump 52, and the recovery container 54.
  • the primary pipe 511 circulates the processing liquid L1 that has been used for processing the substrate W. Specifically, the primary pipe 511 is connected to each chamber 130 and guides the processing liquid L1 from each chamber 130 to the recovery container 54.
  • the processing liquid L1 that has been used for processing the substrate W may be referred to as the “processing liquid L1 that has been used”.
  • the plurality of chambers 130 are arranged vertically, and the recovery container 54 is arranged at a position lower than the lowermost chamber 130.
  • the used processing liquid L1 is discharged from each chamber 130 to the collection container 54 by its own weight.
  • the recovery container 54 stores the used processing liquid L1.
  • the secondary pipe 512 circulates the used processing liquid L1. Specifically, the secondary pipe 512 is connected to the recovery container 54 and guides the processing liquid L1 to the liquid storage unit 3 described with reference to FIG.
  • the recovery pump 52 is attached to the secondary pipe 512. By driving the recovery pump 52, the processing liquid L1 flows from the recovery container 54 into the secondary pipe 512, and the processing liquid L1 flows through the secondary pipe 512 to the liquid storage section 3.
  • FIG. 10 is a diagram showing the processing unit 1A in the present embodiment.
  • the processing unit 1A further includes a nozzle 132, a spin chuck 134, a cup 136, and a nozzle moving unit 138.
  • the chamber 130 houses the nozzle 132, the spin chuck 134, the cup 136, and the nozzle moving unit 138. Further, the chamber 130 accommodates the substrate W transferred by the central robot CR described with reference to FIG.
  • the substrate processing apparatus 1 of the present embodiment is a single-wafer type that processes the substrates W one by one, and the chamber 130 stores the substrates W one by one.
  • the spin chuck 134 rotates the substrate W around the rotation axis AX1 while holding the substrate W horizontally.
  • the spin chuck 134 includes, for example, a sandwiching chuck or a vacuum chuck.
  • the operation of the spin chuck 134 is controlled by the control device 100 (processor of the control unit 101).
  • the cup 136 has a substantially cylindrical shape.
  • the cup 136 is arranged around the spin chuck 134 and receives the used processing liquid L1 discharged from the substrate W.
  • the cup 136 has a liquid reservoir 136a.
  • the liquid reservoir 136 a is provided below the cup 136.
  • the processing liquid L1 received by the cup 136 falls to the liquid reservoir 136a by its own weight.
  • the recovery pipe 51 (primary pipe 511) is connected to the liquid reservoir 136a.
  • the processing liquid L1 collected in the liquid reservoir 136a flows into the recovery pipe 51 (primary pipe 511) by its own weight.
  • the nozzle moving unit 138 rotates about the rotation axis AX2 to move the nozzle 132 horizontally. Specifically, the nozzle moving unit 138 horizontally moves the nozzle 132 between the standby position and the processing position.
  • the standby position indicates a first specified position outside the spin chuck 134 with respect to the rotation axis AX1.
  • the processing position indicates the second specified position above the substrate W.
  • the operation of the nozzle moving unit 138 is controlled by the control device 100 (processor of the control unit 101).
  • the nozzle 132 ejects the processing liquid L1 toward the substrate W.
  • the substrate W is processed in the chamber 130 by the nozzle 132 discharging the processing liquid L1 toward the substrate W.
  • the liquid supply pipe 120 supplies the processing liquid L1 to the nozzle 132.
  • the start/stop of supply of the processing liquid L1 to the nozzle 132 is switched by the opening/closing valve 113.
  • the flow rate of the processing liquid L1 supplied to the nozzle 132 is detected by the flow meter 111.
  • the flow rate can be changed by the flow rate adjusting valve 112.
  • the opening/closing valve 113 is opened, the processing liquid L1 is supplied to the nozzle 132 from the liquid supply pipe 120 at a flow rate corresponding to the opening degree of the flow rate adjusting valve 112. As a result, the processing liquid L1 is ejected from the nozzle 132.
  • the first defoaming line 6a and the second defoaming line 6b are connected to the processing liquid separation unit 7, but the first defoaming line 6a and the second defoaming line 6b are separated. It may not be connected to the section 7.
  • bubbles of the processing liquid are discharged. You may drop it by its own weight.
  • the upper wall 705 of the housing 71 has an opening, and bubbles of the processing liquid and the like fall into the internal space of the housing 71 through the opening of the upper wall 705.
  • the treatment liquid L1 is the etching liquid containing phosphoric acid, but the treatment liquid L1 is not limited to the etching liquid containing phosphoric acid.
  • the processing liquid L1 may be an etching liquid containing no phosphoric acid.
  • the treatment liquid L1 may be a sulfuric acid/hydrogen peroxide mixture solution (sulfuric acid/hydrogen peroxide mixture: SPM).
  • the treatment liquid L1 has a foaming property, but the treatment liquid L1 may be a liquid having no foaming property. Even when the treatment liquid L1 does not have foamability, bubbles are generated in the circulation pump 42 and the recovery pump 52. Further, even if the treatment liquid L1 does not have foamability, bubbles may be generated in the circulation filter unit 43 and the recovery filter unit 53.
  • the first bubble removal line 6a has the upstream line 61a and the downstream line 62a, but the first bubble removal line 6a includes the upstream line 61a and the downstream line.
  • One of 62a and 62a may be included.
  • the second bubble removal line 6b may have one of the upstream side line 61b and the downstream side line 62b.
  • the substrate processing apparatus 1 includes the first bubble removal line 6a and the second bubble removal line 6b, but one of the first bubble removal line 6a and the second bubble removal line 6b. May be omitted.
  • the substrate processing apparatus 1 includes the circulation filter unit 43 and the recovery filter unit 53, but one of the circulation filter unit 43 and the recovery filter unit 53 may be omitted.
  • the circulation pump 42 drives the processing liquid L1, but the element that drives the processing liquid L1 is not limited to the circulation pump 42.
  • the circulation mechanism 4 may include a circulation container and a gas supply mechanism as the elements that drive the processing liquid L1.
  • the circulation container stores the processing liquid L1 flowing through the circulation pipe 41.
  • the gas supply mechanism blows gas onto the liquid surface of the processing liquid L1 stored in the circulation container.
  • the treatment liquid L1 flows through the circulation pipe 41 due to the pressure of the gas blown onto the liquid surface of the treatment liquid L1.
  • the recovery pump 52 drives the used processing liquid L1, but the element that drives the used processing liquid L1 is not limited to the recovery pump 52.
  • the recovery mechanism 5 may include a gas supply mechanism as an element that drives the used processing liquid L1.
  • the gas supply mechanism blows gas onto the liquid surface of the used processing liquid L1 stored in the recovery container 54.
  • the used treatment liquid L1 flows through the recovery pipe 51 (secondary pipe 512) due to the pressure of the gas blown onto the liquid surface of the used treatment liquid L1.
  • the used processing liquid L1 may flow to the liquid storage section 3 by its own weight. Specifically, by arranging the liquid storage part 3 at a position lower than the lowermost chamber 130 among the plurality of chambers 130, the used processing liquid L1 flows to the liquid storage part 3 by its own weight. be able to.
  • the substrate processing apparatus 1 includes the recovery mechanism 5, but the recovery mechanism 5 may be omitted.
  • the substrate processing apparatus 1 performs the etching process on the substrate W
  • the present invention can also be applied to the substrate processing apparatus that performs a process different from the etching process on the substrate W.
  • the present invention can be applied to a substrate processing apparatus that cleans a substrate W.
  • the processing liquid L1 is the etching liquid, but the processing liquid L1 is not limited to the etching liquid.
  • the processing liquid L1 can be a cleaning liquid.
  • the cleaning liquid is used for cleaning the substrate W.
  • the treatment liquid L1 may be SC1 (ammonia-hydrogen peroxide mix: mixed solution of ammonia hydrogen peroxide solution) or SC2 (hydrochloric acid/hydrogen peroxide mixture: hydrogen peroxide solution).
  • the treatment liquid L1 may be a rinse liquid such as DIW or IPA (isopropyl alcohol). The rinse liquid is used to remove the chemical liquid supplied to the substrate W from the substrate W.
  • the substrate processing apparatus 1 is a single wafer type that processes the substrates W one by one, but the substrate processing apparatus 1 is a batch type that simultaneously processes a plurality of substrates W. Good.
  • the substrate W is a semiconductor wafer, but the substrate W is not limited to a semiconductor wafer.
  • the substrate W is a glass substrate for a photomask, a glass substrate for a liquid crystal display device, a substrate for a flat panel display such as an organic EL display, a substrate for an optical disc, a substrate for a magnetic disc, or a substrate for a magneto-optical disc.
  • the opening degree of the flow rate adjusting valve 612a is controlled by the control device 100 (processor of the control unit 101), but the opening degree of the flow rate adjusting valve 612a can be adjusted by an operator. Similarly, the opening degree of the flow rate adjusting valve 622a can be adjusted by the operator.
  • the fluid box 2 is provided for each tower TW, but the fluid box 2 may not be provided for each tower TW.
  • the number of fluid boxes 2 may be smaller than the number of towers TW.
  • the substrate processing apparatus 1 may include one fluid box 2.
  • the processing liquid L1 is supplied from one fluid box 2 to all the processing units 1A.
  • the present invention is preferably used in a substrate processing apparatus that processes a substrate using a processing liquid.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Degasification And Air Bubble Elimination (AREA)
  • Weting (AREA)
  • Filtration Of Liquid (AREA)

Abstract

La présente invention concerne un dispositif (1) de traitement de substrat destiné à traiter un substrat (W) à l'aide d'un liquide de traitement (L1). Le dispositif (1) de traitement de substrat comprend une partie (3) de rétention de liquide, une première tuyauterie (41, 51), des parties filtre (43, 53), une partie (7) de séparation de liquide de traitement, des conduites (6a, 6b) d'élimination de bulles et une seconde tuyauterie (8). La partie (3) de rétention de liquide permet de retenir le liquide de traitement (L1). La première tuyauterie (41, 51) est reliée au niveau d'une extrémité à la partie (3) de rétention de liquide et peut être traversée par l'écoulement de liquide de traitement (L1). Les parties filtre (43, 53) sont fixées à la première tuyauterie (41, 51) et permettent d'éliminer les matières étrangères du liquide de traitement (L1). La partie (7) de séparation de liquide de traitement permet de retenir des bulles se trouvant dans le liquide de traitement (L1) et de séparer le liquide de traitement (L1) des bulles. Les conduites (6a, 6b) d'élimination de bulles sont reliées aux parties filtre (43, 53) et guident les bulles des parties filtre (43, 53) vers la partie (7) de séparation de liquide de traitement. La seconde tuyauterie (8) est reliée à la partie (7) de séparation de liquide de traitement et guide le liquide de traitement (L1), ayant été séparé des bulles, vers la partie (3) de rétention de liquide.
PCT/JP2019/043900 2018-11-26 2019-11-08 Dispositif de traitement de substrat WO2020110663A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-220162 2018-11-26
JP2018220162A JP7203579B2 (ja) 2018-11-26 2018-11-26 基板処理装置

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WO2020110663A1 true WO2020110663A1 (fr) 2020-06-04

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JP (1) JP7203579B2 (fr)
TW (1) TWI724641B (fr)
WO (1) WO2020110663A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01127006A (ja) * 1987-11-13 1989-05-19 Oki Electric Ind Co Ltd 薬液循環ろ過装置
JP2003338487A (ja) * 2002-05-21 2003-11-28 Seiko Epson Corp 処理装置および半導体装置の製造方法
JP2015135943A (ja) * 2013-09-30 2015-07-27 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
JP2017069345A (ja) * 2015-09-29 2017-04-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置におけるフィルタ交換方法
JP2018157149A (ja) * 2017-03-21 2018-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
WO2018186211A1 (fr) * 2017-04-06 2018-10-11 東京エレクトロン株式会社 Dispositif et procédé d'alimentation en liquide

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01127006A (ja) * 1987-11-13 1989-05-19 Oki Electric Ind Co Ltd 薬液循環ろ過装置
JP2003338487A (ja) * 2002-05-21 2003-11-28 Seiko Epson Corp 処理装置および半導体装置の製造方法
JP2015135943A (ja) * 2013-09-30 2015-07-27 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
JP2017069345A (ja) * 2015-09-29 2017-04-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置におけるフィルタ交換方法
JP2018157149A (ja) * 2017-03-21 2018-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
WO2018186211A1 (fr) * 2017-04-06 2018-10-11 東京エレクトロン株式会社 Dispositif et procédé d'alimentation en liquide

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JP7203579B2 (ja) 2023-01-13
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TW202027866A (zh) 2020-08-01

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