WO2020107752A1 - 显示器结构及其制造方法 - Google Patents

显示器结构及其制造方法 Download PDF

Info

Publication number
WO2020107752A1
WO2020107752A1 PCT/CN2019/079076 CN2019079076W WO2020107752A1 WO 2020107752 A1 WO2020107752 A1 WO 2020107752A1 CN 2019079076 W CN2019079076 W CN 2019079076W WO 2020107752 A1 WO2020107752 A1 WO 2020107752A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
display
connection pads
substrate
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/079076
Other languages
English (en)
French (fr)
Inventor
翁金学
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/615,560 priority Critical patent/US20210335980A1/en
Publication of WO2020107752A1 publication Critical patent/WO2020107752A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H10W72/383—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

Definitions

  • the invention relates to a display structure and a manufacturing method thereof, in particular to a display structure and a manufacturing method for increasing the screen ratio of the display.
  • the narrow bezel panel still has some limitations in terms of design and manufacturing process.
  • the panel generally improves the screen ratio by bending the connection pad of the display to the back of the display, but the structure design of the bending of the display connection pad is more complicated, which has a greater impact on the yield of the module product and limits
  • the display may increase the screen ratio.
  • FIG. 1 shows a schematic diagram of a bending of a display structure in the prior art.
  • a display structure 1 includes a display area 10, a bendable area 11, a plurality of display signal lines 12, and a thin film substrate 20.
  • the display area 10 has a flexible substrate extending down to the bendable area 11.
  • the plurality of display signal lines 12 are provided in the flexible substrate for connecting the display elements of the display area.
  • the flexible substrate may be bent toward the back of the display area and connected to the thin film substrate 20 to control the multiple display elements through a control chip provided on the thin film substrate 20.
  • the display signal line is covered with an inorganic layer to block the influence of water and oxygen on the display signal line.
  • the inorganic layer may be cracked, and water and oxygen may penetrate along the cracked portion of the inorganic layer, causing deterioration or failure of the display.
  • the present invention provides a display structure and a manufacturing method thereof to solve the problem that the bending area of the display in the prior art passes through bending, and the bending area still has a certain bending radius, resulting in the display being unable to improve The screen ratio problem.
  • the main object of the present invention is to provide a display structure and a manufacturing method thereof, which can increase the screen ratio of the display.
  • the secondary object of the present invention is to provide a display structure and a manufacturing method thereof, which can connect a connection pad on a flip-chip thin film package (COF) to a connection pad on the back of a display panel, so as not to bend the display, Thereby increasing the screen ratio of the display.
  • COF flip-chip thin film package
  • the secondary objective of the present invention is to provide a display structure and a manufacturing method thereof, which can avoid bending the display to avoid causing the inorganic layer to break, and water and oxygen can penetrate into the display along the crack of the inorganic layer, causing the display to deteriorate or fail Thereby improving the reliability of the display and the life cycle of the product.
  • an embodiment of the present invention provides a display structure including: a polyimide film substrate; an organic light emitting diode layer disposed on the polyimide film substrate; an insulation protection Layer, which is arranged on the organic light emitting diode layer; a plurality of display signal lines are connected to a plurality of display elements in the organic light emitting diode layer, and penetrate the insulating protective layer, the organic light emitting diode layer and the polyimide Amine film substrate; a plurality of first connection pads are provided on the surface of a polyimide film substrate of the polyimide film substrate facing away from the organic light emitting diode layer, the plurality of first connection pads and the A plurality of display signal lines are connected; and a flip-chip film package, which is disposed on the same side as the surface of the polyimide film substrate, the flip-chip film package has a plurality of second connection pads, and The plurality of first connection pads are electrically connected.
  • the plurality of first connection pads and the plurality of second connection pads are connected by an anisotropic conductive film.
  • the display structure further includes: a backplane disposed between the polyimide film substrate and the flip chip package and one of the anisotropic conductive films side.
  • the organic light emitting diode layer includes: an insulating layer disposed on the polyimide film substrate; an active layer disposed on the insulating layer; and a gate insulation A layer is provided on the active layer; a gate is provided on the gate insulating layer; the insulating protective layer is provided on the gate; a first via penetrates the insulating protective layer And the gate insulating layer; and a second via penetrating through the insulating protective layer, the gate insulating layer, the insulating layer and the polyimide film substrate, wherein the plurality of display signals
  • the wire is connected to the active layer through the first via hole and extends on the insulating protection layer, and is connected to the plurality of first connection pads through the second via hole.
  • the polyimide film substrate and the flip chip package are arranged parallel to each other.
  • another embodiment of the present invention provides a display structure including: a substrate; a display element layer disposed on the substrate; an insulating protective layer disposed on the display element layer; and a plurality of display signal lines , Connecting multiple display elements in the display element layer and penetrating the insulating protective layer, the display element layer and the substrate; a plurality of first connection pads are provided on the substrate facing away from the display element layer On a surface of a substrate, the plurality of first connection pads are connected to the plurality of display signal lines; and a flip-chip film package, which is disposed on the same side as the surface of the substrate, the flip-chip film The package has a plurality of second connection pads, and is electrically connected to the plurality of first connection pads.
  • the plurality of first connection pads and the plurality of second connection pads are connected by an anisotropic conductive film.
  • the display structure further includes: a backplane disposed between the substrate and the flip-chip thin film package and on one side of the anisotropic conductive film.
  • the display element layer includes: an insulating layer disposed on the substrate; an active layer disposed on the insulating layer; and a gate insulating layer disposed on the On the active layer; a gate on the gate insulating layer; the insulating protective layer on the gate; a first via that penetrates the insulating protective layer and the gate insulation Layer; and a second via, penetrating the insulating protective layer, the gate insulating layer, the insulating layer and the substrate, wherein the plurality of display signal lines are connected to the via via the first via
  • the active layer extends on the insulating protection layer and is connected to the plurality of first connection pads through the second via.
  • the substrate and the flip chip package are arranged parallel to each other.
  • another embodiment of the present invention provides a method for manufacturing a display structure, including the steps of: providing a display panel including: a substrate; a display element layer disposed on the substrate; an insulating protective layer disposed on the display element On the layer; a plurality of display signal lines connecting multiple display elements in the display element layer, and penetrating the insulating protective layer, the display element layer and the substrate; and a plurality of first connection pads provided on On the surface of a substrate facing away from the display element layer, the plurality of first connection pads are connected to the plurality of display signal lines; a flip-chip film package is provided with a plurality of second connection pads; And electrically connecting the plurality of first connection pads and the plurality of second connection pads.
  • the plurality of first connection pads and the plurality of second connection pads are connected by an anisotropic conductive film.
  • the flip chip package includes a backplane, when the first connection pads and the second connection pads are electrically connected, the backplane and The substrate surfaces are in contact.
  • the display element layer includes: an insulating layer disposed on the substrate; an active layer disposed on the insulating layer; and a gate insulating layer disposed on the On the active layer; a gate on the gate insulating layer; the insulating protective layer on the gate; a first via that penetrates the insulating protective layer and the gate insulation Layer; and a second via, penetrating the insulating protective layer, the gate insulating layer, the insulating layer and the substrate, wherein the plurality of display signal lines are connected to the via via the first via
  • the active layer extends on the insulating protection layer and is connected to the plurality of first connection pads through the second via.
  • the substrate and the flip chip package are arranged parallel to each other.
  • the display structure and the manufacturing method of the present invention can not only improve the bending area of the display existing in the prior art, but the bending area still has a certain bending radius, causing the display to fail
  • the present invention can also avoid bending the display to avoid cracking of the inorganic layer. Water and oxygen will penetrate into the display along the crack of the inorganic layer, causing the display to deteriorate or fail, thereby increasing the screen ratio of the display, Reliability and product life cycle.
  • FIG. 1 is a schematic diagram of a bending of a display structure in the prior art
  • FIG. 2 is a schematic cross-sectional view of the connection between the display structure and the flip-chip thin film package (COF) in the embodiment of the present invention
  • FIG 3 is a schematic cross-sectional view of a display structure in an embodiment of the present invention.
  • FIG. 2 shows a schematic cross-sectional view of a connection between a display structure and a flip-chip thin film package (COF) in an embodiment of the invention
  • FIG. 3 shows a display structure in an embodiment of the invention Schematic cross-section.
  • the embodiments of the present invention provide a display structure and a method for manufacturing the same to achieve the aforementioned object of the invention.
  • the display structure includes: a substrate 21, a display element layer 22, an insulating protective layer 35, a plurality of display signal lines 23, a plurality of first connection pads 24, and a flip chip package 25.
  • the substrate 21 is a flexible substrate (for example, a polyimide film).
  • the substrate 21 may be a glass substrate.
  • the display element layer 22 is disposed on the substrate 21.
  • the insulating protective layer 35 is disposed on the display element layer 22.
  • the plurality of display signal lines 23 are connected to the plurality of display elements in the display element layer 22, and penetrate the insulating protective layer 35, the display element layer 22 and the substrate 21.
  • the plurality of first connection pads 24 are disposed on the surface of a substrate 21 of the substrate 21 facing away from the display element layer 22, and the plurality of first connection pads 24 are connected to the plurality of display signal lines 23 .
  • the plurality of display elements may be a plurality of thin film transistor elements or a plurality of organic light emitting diode elements.
  • the display element layer 22 further includes: an insulating layer 31, an active layer 32, a gate insulating layer 33, a gate 34, a first via 36 and a second via 37.
  • the insulating layer 31 is provided on the substrate 21.
  • the active layer 32 is provided on the insulating layer 31.
  • the gate insulating layer 33 is provided on the active layer 32.
  • the gate 34 is disposed on the gate insulating layer 33.
  • the insulating protective layer 35 is disposed on the gate 34.
  • the first via 36 penetrates the insulating protection layer 35 and the gate insulating layer 33.
  • the second via hole 37 penetrates the insulating protective layer 35, the gate insulating layer 33, the insulating layer 31 and the substrate 21, wherein the plurality of display signal lines 23 pass through the first
  • the hole 36 is connected to the active layer 32 and extends on the insulating protection layer 35, and is connected to the plurality of first connection pads 24 through the second via hole 37.
  • the flip chip package 25 is disposed on the same side as the surface of the substrate 21.
  • the substrate 21 and the flip chip package 25 are arranged parallel to each other.
  • the flip chip package 25 has a thin film substrate, a plurality of traces 28, a plurality of second connection pads 26, a plurality of flip chip package connection pads (not shown), and a control chip ( Not shown).
  • the plurality of traces 28 are disposed on the thin film substrate. One end of the plurality of traces 28 is connected to the plurality of second connection pads 26, and the other end of the plurality of traces 28 is connected to the plurality of flip chip packaging connection pads.
  • the control chip is arranged on the plurality of flip chip packaging connection pads in a flip-chip packaging manner.
  • the plurality of second connection pads 26 are electrically connected to the plurality of first connection pads 24, so that the control chip can control the plurality of traces 28 and the plurality of display signal lines 23 Multiple display elements.
  • the plurality of first connection pads 24 and the plurality of second connection pads 26 are connected by an anisotropic conductive film 27.
  • the display structure further has a back plate 29 disposed between the substrate 21 and the flip chip package 25 and on one side of the anisotropic conductive film 27.
  • the back plate 29 is in contact with the surface of the substrate 21.
  • Another embodiment of the present invention provides a method for manufacturing a display structure, including steps:
  • a display panel is provided.
  • the display panel includes: a substrate 21; a display element layer 22 disposed on the substrate 21; an insulating protective layer 35 disposed on the display element layer 22; a plurality of display signal lines 23, A plurality of display elements in the display element layer 22 are connected and penetrate the insulating protective layer 35, the display element layer 22 and the substrate 21; and a plurality of first connection pads 24 are provided on the substrate 21 On a surface of a substrate 21 facing away from the display element layer 22, the plurality of first connection pads 24 are connected to the plurality of display signal lines 23;
  • the plurality of first connection pads 24 and the plurality of second connection pads 26 are electrically connected.
  • the plurality of first connection pads 24 and the plurality of second connection pads 26 are connected by an anisotropic conductive film 27.
  • the flip chip package 25 includes a back plate 29. When the plurality of first connection pads 24 and the plurality of second connection pads 26 are electrically connected, the back plate 29 and The surfaces of the substrate 21 are in contact.
  • the display element layer 22 further includes: an insulating layer 31 disposed on the substrate 21; an active layer 32 disposed on the insulating layer 31; and a gate insulating layer 33 disposed On the active layer 32; a gate 34, disposed on the gate insulating layer 33; the insulating protective layer 35 is disposed on the gate 34; a first via 36, penetrating the An insulating protective layer 35 and the gate insulating layer 33; and a second via 37, which penetrates the insulating protective layer 35, the gate insulating layer 33, the insulating layer 31 and the substrate 21, wherein
  • the plurality of display signal lines 23 are connected to the active layer 32 through the first via 36 and extend on the insulating protective layer 35, and are connected to the plurality of first via the second via 37 Connect pad 24.
  • the substrate 21 and the flip chip package 25 are arranged parallel to each other.
  • the bending area will still have a certain bending radius, resulting in the display being unable to increase the screen ratio.
  • the display structure and manufacturing method of the present invention connect the connection pad on the flip chip package (COF) with the connection pad on the back of the display panel, so as not to bend the display, thereby increasing the screen ratio of the display.
  • the present invention does not need to bend the display, and can avoid the cracking of the inorganic layer, causing water and oxygen to penetrate into the display from the cracked position of the inorganic layer to cause the display to deteriorate or fail, thereby improving the reliability of the display and the product life cycle.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种显示器结构及制造方法。所述显示器结构包含一基板（21）、一显示器元件层（22）、一绝缘保护层（35）、多条显示信号线（23）、多个第一连接垫（24）及一覆晶薄膜封装件（25）；所述第一连接垫（24）设置在基板（21）背面上，并与所述多条显示信号线（23）相连接；所述覆晶薄膜封装件（25）具有多个第二连接垫（26），与所述多个第一连接垫（24）电性连接。通过将覆晶薄膜封装件（25）上的第二连接垫（26）与显示面板背面的第一连接垫（24）相连接，以达到不用弯折显示器，从而提高显示器的屏占比。

Description

显示器结构及其制造方法 技术领域
本发明是有关于一种显示器结构及其制造方法，特别是有关于一种提高显示器屏占比的显示器结构及其制造方法。
 背景技术
近年来，随着智能手机的普及，消费者对手机功能的需求随着增加，例如，高屏占比、高分辨率等。因此，窄边框面板已经成为手机结构发展的一种的趋势。然而，窄边框面板在设计和制造工艺方面仍存在一些限制。目前面板普遍通过将显示器的连接垫弯折至显示器的背面这样的结构来提高屏占比，但显示器连接垫弯折的结构设计较复杂，对模组产品的良率影响较大，且限制了显示器提高屏占比的可能。
请参照图1所示，示出了现有技术中显示器结构的弯折示意图。一显示器结构1包含一显示区10、一可弯折区11、多条显示信号线12及一薄膜基板20。所述显示区10具有一柔性基板向下延伸至所述可弯折区11。所述柔性基板内设置有所述多条显示信号线12用以连接所述显示区的多个显示元件。所述柔性基板可以朝向所述显示区的背面弯折，并与所述薄膜基板20相连接，以通过所述薄膜基板20上设置的一控制芯片控制所述多个显示元件。
 技术问题
但所述柔性基板弯折后，仍会有一定的弯曲半径，造成显示器结构边框仍须保留一定的尺寸以容纳所述柔性基板，因而限制了显示器提高屏占比的可能。再者，显示信号线上会覆盖一层无机层以阻挡水氧对显示信号线的影响。但所述无机层经过多次弯折后，可能会造成所述无机层破裂，水氧会沿着所述无机层的破裂处渗入，造成显示器的劣化或失效。
故，有必要提供一种显示器结构及其制造方法，以解决现有技术所存在的问题。
 技术解决方案
有鉴于此，本发明提供一种显示器结构及其制造方法，以解决现有技术所存在显示器的弯折区通过弯折后，所述弯折区仍会具有一定的弯曲半径，造成显示器无法提高屏占比的问题。
本发明的主要目的在于提供一种显示器结构及其制造方法，其可以提高显示器的屏占比。
本发明的次要目的在于提供一种显示器结构及其制造方法，其可以通过将覆晶薄膜封装件（COF）上的连接垫与显示面板背面的连接垫相连接，以达到不用弯折显示器,从而提高显示器的屏占比。
本发明的次要目的在于提供一种显示器结构及其制造方法，其可以不用弯折显示器，以避免造成无机层破裂，水氧会沿着无机层的破裂处渗入显示器，造成显示器劣化或失效,从而提高显示器的信赖性及产品的生命周期。
为达成本发明的前述目的，本发明一实施例提供一种显示器结构，包含：一聚酰亚胺薄膜基板；一有机发光二极管层，设置于所述聚酰亚胺薄膜基板上；一绝缘保护层，设置于有机发光二极管层上；多条显示信号线，连接所述有机发光二极管层中的多个显示器元件，并贯穿所述绝缘保护层、所述有机发光二极管层及所述聚酰亚胺薄膜基板；多个第一连接垫，设置在所述聚酰亚胺薄膜基板背离所述有机发光二极管层的一聚酰亚胺薄膜基板表面上，所述多个第一连接垫与所述多条显示信号线相连接；及一覆晶薄膜封装件，设置于与所述聚酰亚胺薄膜基板表面的一相同侧，所述覆晶薄膜封装件具有多个第二连接垫，与所述多个第一连接垫电性连接。
在本发明的一实施例中，所述多个第一连接垫与所述多个第二连接垫通过一异方性导电膜连接。
在本发明的一实施例中，所述显示器结构更包含：一背板，设置于所述聚酰亚胺薄膜基板及所述覆晶薄膜封装件之间及所述异方性导电膜的一侧。
在本发明的一实施例中，所述有机发光二极管层包含：一绝缘层，设置于所述聚酰亚胺薄膜基板上；一有源层，设置于所述绝缘层上；一栅极绝缘层，设置于所述有源层上；一栅极，设置于所述栅极绝缘层上；所述绝缘保护层设置于所述栅极上；一第一过孔，贯穿所述绝缘保护层及所述栅极绝缘层；及一第二过孔，贯穿所述绝缘保护层、所述栅极绝缘层、所述绝缘层及所述聚酰亚胺薄膜基板，其中所述多条显示信号线通过所述第一过孔连接所述有源层并延伸在所述绝缘保护层上，并通过所述第二过孔连接至所述多个第一连接垫。
在本发明的一实施例中，所述聚酰亚胺薄膜基板与所述覆晶薄膜封装件呈相互平行设置。
再者，本发明另一实施例另提供一种显示器结构，包含：一基板；一显示器元件层，设置于所述基板上；一绝缘保护层，设置于显示器元件层上；多条显示信号线，连接所述显示器元件层中的多个显示器元件，并贯穿所述绝缘保护层、所述显示器元件层及所述基板；多个第一连接垫，设置在所述基板背离所述显示器元件层的一基板表面上，所述多个第一连接垫与所述多条显示信号线相连接；及一覆晶薄膜封装件，设置于与所述基板表面的一相同侧，所述覆晶薄膜封装件具有多个第二连接垫，与所述多个第一连接垫电性连接。
在本发明的一实施例中，所述多个第一连接垫与所述多个第二连接垫通过一异方性导电膜连接。
在本发明的一实施例中，所述显示器结构更包含：一背板，设置于所述基板及所述覆晶薄膜封装件之间及所述异方性导电膜的一侧。
在本发明的一实施例中，所述显示器元件层包含：一绝缘层，设置于所述基板上；一有源层，设置于所述绝缘层上；一栅极绝缘层，设置于所述有源层上；一栅极，设置于所述栅极绝缘层上；所述绝缘保护层设置于所述栅极上；一第一过孔，贯穿所述绝缘保护层及所述栅极绝缘层；及一第二过孔，贯穿所述绝缘保护层、所述栅极绝缘层、所述绝缘层及所述基板，其中所述多条显示信号线通过所述第一过孔连接所述有源层并延伸在所述绝缘保护层上，并通过所述第二过孔连接至所述多个第一连接垫。
在本发明的一实施例中，所述基板与所述覆晶薄膜封装件呈相互平行设置。
另外，本发明又一实施例提供一种显示器结构制造方法，包含步骤：提供一显示器面板，包含：一基板；一显示器元件层，设置于所述基板上；一绝缘保护层，设置于显示器元件层上；多条显示信号线，连接所述显示器元件层中的多个显示器元件，并贯穿所述绝缘保护层、所述显示器元件层及所述基板；及多个第一连接垫，设置在所述基板背离所述显示器元件层的一基板表面上，所述多个第一连接垫与所述多条显示信号线相连接；提供一覆晶薄膜封装件，具有多个第二连接垫；及将所述多个第一连接垫与所述多个第二连接垫电性相连接。
在本发明的一实施例中，所述多个第一连接垫与所述多个第二连接垫通过一异方性导电膜连接。
在本发明的一实施例中，所述覆晶薄膜封装件包含一背板，当所述多个第一连接垫与所述多个第二连接垫电性相连接时，所述背板与所述基板表面相接触。
在本发明的一实施例中，所述显示器元件层包含：一绝缘层，设置于所述基板上；一有源层，设置于所述绝缘层上；一栅极绝缘层，设置于所述有源层上；一栅极，设置于所述栅极绝缘层上；所述绝缘保护层设置于所述栅极上；一第一过孔，贯穿所述绝缘保护层及所述栅极绝缘层；及一第二过孔，贯穿所述绝缘保护层、所述栅极绝缘层、所述绝缘层及所述基板，其中所述多条显示信号线通过所述第一过孔连接所述有源层并延伸在所述绝缘保护层上，并通过所述第二过孔连接至所述多个第一连接垫。
在本发明的一实施例中，所述基板与所述覆晶薄膜封装件呈相互平行设置。
 有益效果
与现有技术相比较，本发明的显示器结构及其制造方法，不但可改善现有技术所存在显示器的弯折区弯折后，所述弯折区仍会具有一定的弯曲半径，造成显示器无法提高屏占比的问题，本发明还可以不用弯折显示器，以避免造成无机层破裂，水氧会沿着无机层的破裂处渗入显示器，造成显示器劣化或失效,从而提高显示器的屏占比、信赖性及产品的生命周期。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1是现有技术中显示器结构的弯折示意图；
图2是本发明的实施例中显示器结构与覆晶薄膜封装件（COF）连接的剖面示意图；
图3是本发明的实施例中显示器结构的剖面示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图2及图3所示，图2示出了本发明的实施例中显示器结构与覆晶薄膜封装件（COF）连接的剖面示意图；图3示出了本发明的实施例中显示器结构的剖面示意图。本发明实施例为达成本发明的前述目的，提供一种显示器结构及其制造方法。所述显示器结构包含：一基板21、一显示器元件层22、一绝缘保护层35、多条显示信号线23、多个第一连接垫24及一覆晶薄膜封装件25。可选地，所述基板21为一柔性基板（例如，一聚酰亚胺薄膜）。替代地，所述基板21可以为一玻璃基板。所述显示器元件层22设置于所述基板21上。所述绝缘保护层35设置于显示器元件层22上。所述多条显示信号线23，连接所述显示器元件层22中的多个显示器元件，并贯穿所述绝缘保护层35、所述显示器元件层22及所述基板21。所述多个第一连接垫24，设置在所述基板21背离所述显示器元件层22的一基板21表面上，所述多个第一连接垫24与所述多条显示信号线23相连接。可选地，所述多个显示器元件可以是多个薄膜晶体管元件或多个有机发光二极管元件。可选地，所述显示器元件层22还包含：一绝缘层31、一有源层32、一栅极绝缘层33、一栅极34、一第一过孔36及一第二过孔37。所述绝缘层31设置于所述基板21上。所述有源层32，设置于所述绝缘层31上。所述栅极绝缘层33，设置于所述有源层32上。所述栅极34，设置于所述栅极绝缘层33上。所述绝缘保护层35设置于所述栅极34上。所述第一过孔36，贯穿所述绝缘保护层35及所述栅极绝缘层33。所述第二过孔37，贯穿所述绝缘保护层35、所述栅极绝缘层33、所述绝缘层31及所述基板21，其中所述多条显示信号线23通过所述第一过孔36连接所述有源层32并延伸在所述绝缘保护层35上，并通过所述第二过孔37连接至所述多个第一连接垫24。
接着，请参照图2所示，所述覆晶薄膜封装件25设置于与所述基板21表面的一相同侧。优选地，所述基板21与所述覆晶薄膜封装件25呈相互平行设置。本实施例中，所述覆晶薄膜封装件25具有一薄膜基板、多条走线28、多个第二连接垫26、多个覆晶薄膜封装连接垫（未示出）及一控制芯片（未示出）。所述多条走线28设置于所述薄膜基板上。所述多条走线28的一端连接所述多个第二连接垫26，所述多条走线28的另一端连接所述多个覆晶薄膜封装连接垫。所述控制芯片以倒装封装的方式设置于所述多个覆晶薄膜封装连接垫上。所述多个第二连接垫26与所述多个第一连接垫24电性连接，以使得所述控制芯片可以通过所述多条走线28及所述多条显示信号线23控制所述多个显示元件。可选地，所述多个第一连接垫24与所述多个第二连接垫26通过一异方性导电膜27连接。另外地，所述显示器结构更具有一背板29，设置于所述基板21及所述覆晶薄膜封装件25之间，以及位于所述异方性导电膜27的一侧。可选地，当所述多个第一连接垫24与所述多个第二连接垫26电性相连接时，所述背板29与所述基板21表面相接触。
另外，本发明另一实施例提供一种显示器结构制造方法，包含步骤：
提供一显示器面板，所述显示器面板包含：一基板21；一显示器元件层22，设置于所述基板21上；一绝缘保护层35，设置于显示器元件层22上；多条显示信号线23，连接所述显示器元件层22中的多个显示器元件，并贯穿所述绝缘保护层35、所述显示器元件层22及所述基板21；及多个第一连接垫24，设置在所述基板21背离所述显示器元件层22的一基板21表面上，所述多个第一连接垫24与所述多条显示信号线23相连接；
提供一覆晶薄膜封装件25，具有多个第二连接垫26；及
将所述多个第一连接垫24与所述多个第二连接垫26电性相连接。
可选地，所述多个第一连接垫24与所述多个第二连接垫26通过一异方性导电膜27连接。可选地，所述覆晶薄膜封装件25包含一背板29，当所述多个第一连接垫24与所述多个第二连接垫26电性相连接时，所述背板29与所述基板21表面相接触。本实施例中，所述显示器元件层22还包含：一绝缘层31，设置于所述基板21上；一有源层32，设置于所述绝缘层31上；一栅极绝缘层33，设置于所述有源层32上；一栅极34，设置于所述栅极绝缘层33上；所述绝缘保护层35设置于所述栅极34上；一第一过孔36，贯穿所述绝缘保护层35及所述栅极绝缘层33；及一第二过孔37，贯穿所述绝缘保护层35、所述栅极绝缘层33、所述绝缘层31及所述基板21，其中所述多条显示信号线23通过所述第一过孔36连接所述有源层32并延伸在所述绝缘保护层35上，并通过所述第二过孔37连接至所述多个第一连接垫24。可选地，所述基板21与所述覆晶薄膜封装件25呈相互平行设置。
如上所述，相较于现有技术所存在显示器的弯折区弯折后，所述弯折区仍会具有一定的弯曲半径，造成显示器无法提高屏占比。本发明的显示器结构及其制造方法通过将覆晶薄膜封装件（COF）上的连接垫与显示面板背面的连接垫相连接，以达到不用弯折显示器,从而提高显示器的屏占比。再者，本发明可以不用弯折显示器，可以避免无机层破裂，造成水氧从无机层破裂处渗入显示器造成显示器劣化或失效,从而提高显示器的信赖性及产品的生命周期。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (15)

  1. 一种显示器结构，包含：
    一聚酰亚胺薄膜基板；
    一有机发光二极管层，设置于所述聚酰亚胺薄膜基板上；
    一绝缘保护层，设置于有机发光二极管层上；
    多条显示信号线，连接所述有机发光二极管层中的多个显示器元件，并贯穿所述绝缘保护层、所述有机发光二极管层及所述聚酰亚胺薄膜基板；
    多个第一连接垫，设置在所述聚酰亚胺薄膜基板背离所述有机发光二极管层的一聚酰亚胺薄膜基板表面上，所述多个第一连接垫与所述多条显示信号线相连接；及
    一覆晶薄膜封装件，设置于与所述聚酰亚胺薄膜基板表面的一相同侧，所述覆晶薄膜封装件具有多个第二连接垫，与所述多个第一连接垫电性连接。
  2. 如权利要求1所述的显示器结构，其中所述多个第一连接垫与所述多个第二连接垫通过一异方性导电膜连接。
  3. 如权利要求2所述的显示器结构，所述显示器结构更包含：一背板，设置于所述聚酰亚胺薄膜基板及所述覆晶薄膜封装件之间及所述异方性导电膜的一侧。
  4. 如权利要求1所述的显示器结构，其中所述有机发光二极管层包含：
    一绝缘层，设置于所述聚酰亚胺薄膜基板上；
    一有源层，设置于所述绝缘层上；
    一栅极绝缘层，设置于所述有源层上；
    一栅极，设置于所述栅极绝缘层上；
    所述绝缘保护层设置于所述栅极上；
    一第一过孔，贯穿所述绝缘保护层及所述栅极绝缘层；及
    一第二过孔，贯穿所述绝缘保护层、所述栅极绝缘层、所述绝缘层及所述聚酰亚胺薄膜基板，
    其中所述多条显示信号线通过所述第一过孔连接所述有源层并延伸在所述绝缘保护层上，并通过所述第二过孔连接至所述多个第一连接垫。
  5. 如权利要求1所述的显示器结构，其中所述聚酰亚胺薄膜基板与所述覆晶薄膜封装件呈相互平行设置。
  6. 一种显示器结构，包含：
    一基板；
    一显示器元件层，设置于所述基板上；
    一绝缘保护层，设置于显示器元件层上；
    多条显示信号线，连接所述显示器元件层中的多个显示器元件，并贯穿所述绝缘保护层、所述显示器元件层及所述基板；
    多个第一连接垫，设置在所述基板背离所述显示器元件层的一基板表面上，所述多个第一连接垫与所述多条显示信号线相连接；及
    一覆晶薄膜封装件，设置于与所述基板表面的一相同侧，所述覆晶薄膜封装件具有多个第二连接垫，与所述多个第一连接垫电性连接。
  7. 如权利要求6所述的显示器结构，其中所述多个第一连接垫与所述多个第二连接垫通过一异方性导电膜连接。
  8. 如权利要求7所述的显示器结构，更包含：一背板，设置于所述基板及所述覆晶薄膜封装件之间及所述异方性导电膜的一侧。
  9. 如权利要求6所述的显示器结构，其中所述显示器元件层包含：
    一绝缘层，设置于所述基板上；
    一有源层，设置于所述绝缘层上；
    一栅极绝缘层，设置于所述有源层上；
    一栅极，设置于所述栅极绝缘层上；
    所述绝缘保护层设置于所述栅极上；
    一第一过孔，贯穿所述绝缘保护层及所述栅极绝缘层；及
    一第二过孔，贯穿所述绝缘保护层、所述栅极绝缘层、所述绝缘层及所述基板，
    其中所述多条显示信号线通过所述第一过孔连接所述有源层并延伸在所述绝缘保护层上，并通过所述第二过孔连接至所述多个第一连接垫。
  10. 如权利要求6所述的显示器结构，其中所述基板与所述覆晶薄膜封装件呈相互平行设置。
  11. 一种显示器结构制造方法，包含步骤：
    提供一显示器面板，包含：
    一基板；
    一显示器元件层，设置于所述基板上；
    一绝缘保护层，设置于显示器元件层上；
    多条显示信号线，连接所述显示器元件层中的多个显示器元件，并贯穿所述绝缘保护层、所述显示器元件层及所述基板；及
    多个第一连接垫，设置在所述基板背离所述显示器元件层的一基板表面上，所述多个第一连接垫与所述多条显示信号线相连接；
    提供一覆晶薄膜封装件，具有多个第二连接垫；及
    将所述多个第一连接垫与所述多个第二连接垫电性相连接。
  12. 如权利要求11所述的显示器结构制造方法，其中所述多个第一连接垫与所述多个第二连接垫通过一异方性导电膜连接。
  13. 如权利要求12所述的显示器结构制造方法，其中所述覆晶薄膜封装件包含一背板，当所述多个第一连接垫与所述多个第二连接垫电性相连接时，所述背板与所述基板表面相接触。
  14. 如权利要求11所述的显示器结构制造方法，其中所述显示器元件层包含：
    一绝缘层，设置于所述基板上；
    一有源层，设置于所述绝缘层上；
    一栅极绝缘层，设置于所述有源层上；
    一栅极，设置于所述栅极绝缘层上；
    所述绝缘保护层设置于所述栅极上；
    一第一过孔，贯穿所述绝缘保护层及所述栅极绝缘层；及
    一第二过孔，贯穿所述绝缘保护层、所述栅极绝缘层、所述绝缘层及所述基板，
    其中所述多条显示信号线通过所述第一过孔连接所述有源层并延伸在所述绝缘保护层上，并通过所述第二过孔连接至所述多个第一连接垫。
  15. 如权利要求11所述的显示器结构制造方法，其中所述基板与所述覆晶薄膜封装件呈相互平行设置。
PCT/CN2019/079076 2018-11-28 2019-03-21 显示器结构及其制造方法 Ceased WO2020107752A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/615,560 US20210335980A1 (en) 2018-11-28 2019-03-21 Display structure and manufactruing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811430589.3 2018-11-28
CN201811430589.3A CN109638040B (zh) 2018-11-28 2018-11-28 显示器结构及其制造方法

Publications (1)

Publication Number Publication Date
WO2020107752A1 true WO2020107752A1 (zh) 2020-06-04

Family

ID=66069787

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/079076 Ceased WO2020107752A1 (zh) 2018-11-28 2019-03-21 显示器结构及其制造方法

Country Status (3)

Country Link
US (1) US20210335980A1 (zh)
CN (1) CN109638040B (zh)
WO (1) WO2020107752A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111244129B (zh) * 2019-06-18 2021-10-22 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示面板、显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140184057A1 (en) * 2013-01-03 2014-07-03 Apple Inc Narrow Border Displays For Electronic Devices
CN104851892A (zh) * 2015-05-12 2015-08-19 深圳市华星光电技术有限公司 窄边框柔性显示装置及其制作方法
CN104992956A (zh) * 2015-05-15 2015-10-21 深圳市华星光电技术有限公司 无边框显示装置及其制作方法
CN107039377A (zh) * 2017-06-16 2017-08-11 京东方科技集团股份有限公司 一种显示面板、其制作方法及显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101808730B1 (ko) * 2010-10-22 2017-12-14 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102049735B1 (ko) * 2013-04-30 2019-11-28 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
CN104576966B (zh) * 2014-12-31 2017-02-01 北京维信诺科技有限公司 一种柔性显示装置及其制备方法
CN106896599A (zh) * 2017-03-10 2017-06-27 惠科股份有限公司 显示面板及其显示装置
CN107256870A (zh) * 2017-06-09 2017-10-17 京东方科技集团股份有限公司 一种阵列基板及制作方法、柔性显示面板、显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140184057A1 (en) * 2013-01-03 2014-07-03 Apple Inc Narrow Border Displays For Electronic Devices
CN104851892A (zh) * 2015-05-12 2015-08-19 深圳市华星光电技术有限公司 窄边框柔性显示装置及其制作方法
CN104992956A (zh) * 2015-05-15 2015-10-21 深圳市华星光电技术有限公司 无边框显示装置及其制作方法
CN107039377A (zh) * 2017-06-16 2017-08-11 京东方科技集团股份有限公司 一种显示面板、其制作方法及显示装置

Also Published As

Publication number Publication date
CN109638040A (zh) 2019-04-16
CN109638040B (zh) 2021-06-25
US20210335980A1 (en) 2021-10-28

Similar Documents

Publication Publication Date Title
US11051405B2 (en) Flexible display
CN109755412B (zh) 一种柔性基板、制作方法、柔性显示装置和电子器件
US11309500B2 (en) Display panel and manufacturing method thereof
CN108766988B (zh) 显示面板及显示装置
WO2020196085A1 (ja) フレキシブルパネル装置
CN113767475B (zh) 柔性显示面板、显示装置及制备方法
CN108766979B (zh) 显示面板及显示装置
TWI782380B (zh) 顯示裝置
CN104617106B (zh) 一种阵列基板及显示装置
CN110610961B (zh) 阵列基板和显示面板
US20210265393A1 (en) Display device
KR102300254B1 (ko) 표시 장치
US10971465B2 (en) Driving chip, display substrate, display device and method for manufacturing display device
CN107946317A (zh) 一种柔性阵列基板及制备方法、显示基板、显示装置
US20130120329A1 (en) Display panel
CN108089361B (zh) 显示装置及用于制造该显示装置的方法
WO2020151123A1 (zh) 有机发光二极管柔性阵列基板
US10817025B2 (en) Narrow-bezel display module and display device
TW202034029A (zh) 顯示裝置及其製造方法
WO2020006946A1 (zh) 显示面板扇出走线结构及其制作方法
US20210223835A1 (en) Display panel and display device
CN115909902A (zh) 显示模组及其制备方法、显示装置
WO2022226884A1 (zh) 显示面板
WO2020215871A1 (zh) 柔性基板及显示装置
WO2020107752A1 (zh) 显示器结构及其制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19890738

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19890738

Country of ref document: EP

Kind code of ref document: A1