WO2020107722A1 - 基板切割装置及基板切割方法 - Google Patents

基板切割装置及基板切割方法 Download PDF

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Publication number
WO2020107722A1
WO2020107722A1 PCT/CN2019/075602 CN2019075602W WO2020107722A1 WO 2020107722 A1 WO2020107722 A1 WO 2020107722A1 CN 2019075602 W CN2019075602 W CN 2019075602W WO 2020107722 A1 WO2020107722 A1 WO 2020107722A1
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Prior art keywords
substrate
cut
area
metal layer
splitting unit
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Ceased
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PCT/CN2019/075602
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English (en)
French (fr)
Inventor
苑春歌
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Publication of WO2020107722A1 publication Critical patent/WO2020107722A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing

Definitions

  • the invention relates to the field of display technology, and in particular to a substrate cutting device and a substrate cutting method.
  • Thin film transistor is the current liquid crystal display (Liquid Crystal Display, LCD) and active matrix drive type organic electroluminescent display device (Active Matrix Organic
  • AMOLED Light-Emitting Diode
  • liquid crystal displays which include a liquid crystal display panel and a backlight module.
  • the working principle of the LCD panel is based on the thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate) and color filter (Color Filter, CF) substrates are filled with liquid crystal molecules, and pixel voltage and common voltage are applied to the two substrates respectively.
  • the formed electric field controls the rotation direction of the liquid crystal molecules to transmit the light from the backlight module to generate a picture.
  • HVA High Vertical Alignment
  • the array substrate In order to enable the array substrate to be powered by the conductive probe, it needs to be placed in the ply of the array substrate and the CF substrate A part of the edge of a certain substrate is cut off to expose the area where the opposite substrate can be pinned, and then the HVA process is performed (for example, a part of the array substrate is cut off before the HVA process is exposed to expose the area where the CF substrate can be pinned);
  • the cutter wheel first cuts the edge of the array substrate to produce cracks, and then continues to expand the cracks on the edge of the array substrate through the splitting device until the edge of the array substrate is completely separated from the main body.
  • the purpose of the present invention is to provide a substrate cutting device, which can ensure the normal separation of the substrate to be removed, which is beneficial to the realization of the subsequent HVA process.
  • the object of the present invention is also to provide a substrate cutting method, which can ensure the normal separation of the substrate to be removed, which is beneficial to the realization of the subsequent HVA process.
  • the present invention provides a substrate cutting device, including: a splitting unit, a cutter wheel provided on one side of the splitting unit, and a laser detection generator;
  • the laser detection generator is used for detecting whether there is a metal layer on the cutting line position of the substrate to be cut, and generating a laser to cut the metal layer when the metal layer is detected, and not generating a laser when the metal layer is not detected;
  • the cutter wheel is used to cut a part of the substrate to be cut along the cutting line;
  • the splitting unit is used to separate the area to be removed of the cut substrate.
  • the splitting unit includes an upper splitting and a lower splitting and a servo motor connected to the lower splitting.
  • the area to be removed of the cut substrate is clamped between the upper and lower lobes.
  • the servo motor is used to drive the lower lobes to generate a wave twisting action to separate the areas of the cut substrate to be removed.
  • the side of the lower lobes facing the area to be removed of the cut substrate is provided with a vacuum adsorption area, which is used to adsorb the area to be removed.
  • the invention also provides a substrate cutting method, including the following steps:
  • Step S1 Provide a substrate cutting device;
  • the substrate cutting device includes: a splitting unit, a cutter wheel provided on one side of the splitting unit, and a laser detection generator;
  • Step S2 the laser detection generator detects whether there is a metal layer at the cutting line position of the substrate to be cut; when the metal layer is detected, a laser is generated to cut the metal layer, and when no metal layer is detected, no laser is generated;
  • Step S3. The cutter wheel cuts part of the substrate to be cut along the cutting line; the splitting unit separates the area of the substrate to be removed from the cut.
  • the splitting unit includes an upper splitting and a lower splitting and a servo motor connected to the lower splitting.
  • the area to be removed of the cut substrate is clamped between the upper and lower lobes.
  • the servo motor drives the split to generate a wave twisting action to separate the area of the cut substrate to be removed.
  • a side of the lower lobes facing the area to be removed of the cut substrate is provided with a vacuum adsorption area, which adsorbs the area to be removed.
  • the substrate cutting device of the present invention includes: a splitting unit, a cutter wheel provided on one side of the splitting unit, and a laser detection generator; when the substrate cutting device cuts a substrate to be cut, the laser detection The generator detects whether there is a metal layer at the position of the cutting line of the substrate to be cut, and generates a laser to cut the metal layer when the metal layer is detected, and then the cutter wheel cuts part of the substrate to be cut along the cutting line to make the substrate to be cut A crack is generated at the position of the cutting line, and then the sliver unit continues to enlarge the crack until the area of the substrate to be removed is completely separated, and then the area to be removed is removed, because the laser detection generator before the cutter wheel cuts the substrate to be cut The metal layer has been cut to ensure that the splitting unit can normally separate the area of the cut substrate to be removed, which is beneficial to the realization of the subsequent HVA process.
  • the substrate cutting method of the present invention can ensure that the area to be removed of the cut substrate is normally separated, which is beneficial to the realization of
  • FIG. 1 is a schematic diagram of a substrate cutting device of the present invention
  • FIG. 3 and 4 are schematic diagrams of step S2 of the substrate cutting method of the present invention.
  • 5 and 6 are schematic diagrams of step S3 of the substrate cutting method of the present invention.
  • the present invention provides a substrate cutting device, including: a splitting unit 10, a cutter wheel 20 provided on one side of the splitting unit 10, and a laser detection generator 30;
  • the laser detection generator 30 is used to detect whether there is a metal layer 42 at the position of the cutting line 41 of the substrate 40 to be cut, and generate a laser to cut the metal layer 42 when the metal layer 42 is detected, and when the metal layer 42 is not detected No laser is produced;
  • the cutter wheel 20 is used to cut a part of the substrate 40 to be cut along the cutting line 41;
  • the splitting unit 10 is used to separate the area 43 to be removed of the cut substrate 40.
  • a laser detection generator 30 is provided in the substrate cutting device.
  • the laser detection generator 30 detects the cutting line 41 of the substrate 40 to be cut. Whether there is a metal layer 42 at the location, and when the metal layer 42 is detected, a laser is used to cut the metal layer 42, and then the cutter wheel 20 cuts a part of the substrate 40 to be cut along the cutting line 41 so that the substrate 40 to be cut is located on the cutting line 41 A crack occurs at the position of the rupture, and then the rupture unit 10 continues to expand the crack until the area 43 to be removed of the cut substrate 40 is completely separated, and then the area 43 to be removed of the cut substrate 40 is removed, because the cutter wheel 20 cuts to be cut Before the substrate 40, the laser detection generator 30 has cut the metal layer 42 to ensure that the splitting unit 10 can normally separate the to-be-removed area 43 of the cut substrate 40, which is beneficial to the realization of the subsequent HVA process.
  • the split unit 10 includes an upper split 11 and a lower split 12 and a servo motor 13 connected to the lower split 12; the area 43 to be removed of the cut substrate 40 is clamped to the upper split 11 And the lower split 12; the servo motor 13 is used to drive the lower split 12 to generate a wave twisting action to simulate the manual split action to enlarge the cut of the cut substrate 40 at the position of the cutting line 41 to separate the cut The area 43 of the substrate 40 to be removed.
  • a side of the lower split 12 facing the area 43 to be removed of the cut substrate 40 is provided with a vacuum suction area 121, which is used to adsorb the area 43 to be removed and can be torn in any direction
  • the region 43 to be removed further separates the region 43 to be removed.
  • the region 43 to be removed can be canceled by vacuum breaking, so as to facilitate the removal of the region 43 to be removed.
  • the substrate cutting device of the present invention can be used to cut the substrate of the liquid crystal panel to be subjected to the HVA process.
  • the liquid crystal panel includes a TFT array substrate and a CF substrate that are oppositely arranged.
  • the CF substrate has a pin piercing region on the side facing the region to be removed of the TFT array substrate.
  • the TFT array substrate of the liquid crystal panel is cut by the substrate cutting device of the present invention.
  • the area to be removed of the TFT array substrate can be normally separated to expose the pin-pin area on the CF substrate, and the input voltage is brought into contact with the pin-pin area through the power-on probe to realize the HVA process of the liquid crystal panel.
  • the present invention also provides a substrate cutting method, including the following steps:
  • Step S1 please refer to FIG. 1 to provide a substrate cutting device;
  • the substrate cutting device includes: a splitting unit 10, a cutter wheel 20 provided on one side of the splitting unit 10, and a laser detection generator 30;
  • Step S2 please refer to FIGS. 3 and 4, the laser detection generator 30 detects whether there is a metal layer 42 at the position of the cutting line 41 of the substrate 40 to be cut; when the metal layer 42 is detected, the metal layer 42 is generated by laser cutting. No laser is generated when the metal layer 42 is not detected;
  • Step S3. Please refer to FIG. 5 and FIG. 6, the cutter wheel 20 cuts a part of the substrate 40 to be cut along the cutting line 41; the splitting unit 10 separates the area 43 to be removed of the cut substrate 40.
  • the laser detection generator 30 detects whether there is a metal layer 42 at the position of the cutting line 41 of the substrate 40 to be cut, and generates a laser cutting the metal layer 42 when the metal layer 42 is detected Then, the cutter wheel 20 cuts a part of the substrate 40 to be cut along the cutting line 41, so that the substrate 40 to be cut is located at the position of the cutting line 41, and then the cracking unit 10 continues to expand the crack until the cut substrate 40 is to be removed The area 43 is completely separated, and then the area 43 to be removed of the cut substrate 40 is removed, because before the cutter wheel 20 cuts the substrate 40 to be cut, the laser detection generator 30 has cut the metal layer 42 to ensure the split unit 10 Being able to normally separate the to-be-removed area 43 of the cut substrate 40 is beneficial to the realization of the subsequent HVA process.
  • the split unit 10 includes an upper split 11 and a lower split 12 and a servo motor 13 connected to the lower split 12; the area 43 to be removed of the cut substrate 40 is clamped to the upper split 11 And the lower split 12; the servo motor 13 is used to drive the lower split 12 to generate a wave twisting action to simulate the manual split action to enlarge the cut of the cut substrate 40 at the position of the cutting line 41 to separate the cut The area 43 of the substrate 40 to be removed.
  • a side of the lower split 12 facing the area 43 to be removed of the cut substrate 40 is provided with a vacuum suction area 121, which is used to adsorb the area 43 to be removed and can be torn in any direction
  • the region 43 to be removed further separates the region 43 to be removed.
  • the region 43 to be removed can be canceled by vacuum breaking, so as to facilitate the removal of the region 43 to be removed.
  • the substrate cutting method of the present invention can be used to cut the substrate of the liquid crystal panel to be subjected to the HVA process.
  • the liquid crystal panel includes a TFT array substrate and a CF substrate that are oppositely arranged, and the CF substrate has a pin piercing region on the side facing the region to be removed of the TFT array substrate, and the TFT array substrate of the liquid crystal panel is cut by the substrate cutting method of the present invention.
  • the area to be removed of the TFT array substrate can be normally separated to expose the pin-pin area on the CF substrate, and the input voltage is brought into contact with the pin-pin area through the power-on probe to realize the HVA process of the liquid crystal panel.
  • the substrate cutting device of the present invention includes: a splitting unit, a cutter wheel provided on one side of the splitting unit, and a laser detection generator; when the substrate cutting device cuts the substrate to be cut, the laser detection occurs
  • the device detects whether there is a metal layer at the position of the cutting line of the substrate to be cut, and generates a laser to cut the metal layer when the metal layer is detected, and then the cutter wheel cuts part of the substrate to be cut along the cutting line, so that the substrate to be cut is located
  • a crack is generated at the position of the cutting line, and then the sliver unit continues to expand the crack until the area of the substrate to be removed is completely separated, and then the area to be removed is removed, because the laser detection generator has
  • the metal layer is cut to ensure that the splitting unit can normally separate the area to be removed of the cut substrate, which is beneficial to the realization of the subsequent HVA process.
  • the substrate cutting method of the present invention can ensure that the area to be removed of the cut substrate is normally separated, which is beneficial to the realization of the subsequent H

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Abstract

一种基板切割装置及基板切割方法，其中基板切割装置包括：裂片单元（10）、设于裂片单元（10）一侧的刀轮（20）以及激光探测发生器（30）；基板切割装置在切割待切割的基板（40）时，激光探测发生器（30）探测待切割的基板（40）的切割线（41）的位置是否有金属层（42），并在探测到金属层（42）时产生激光切割金属层（42），接着刀轮（20）沿着切割线（41）切割部分待切割的基板（40），使待切割的基板（40）位于切割线（41）的位置产生裂缝，接着裂片单元（10）持续扩大裂缝直至切割过的基板（40）的待去除区域（43）完全分离开，接着移除待去除区域（43），由于在刀轮（20）切割待切割的基板（40）之前，激光探测发生器（30）已经将金属层（42）切割开，保证裂片单元（10）能够正常分离切割过的基板（40）的待去除区域（43），有利于后续的HVA制程的实现。

Description

基板切割装置及基板切割方法 技术领域
本发明涉及显示技术领域，尤其涉及一种基板切割装置及基板切割方法。
 背景技术
薄膜晶体管（Thin Film Transistor，TFT）是目前液晶显示装置（Liquid Crystal Display，LCD）和有源矩阵驱动式有机电致发光显示装置（Active Matrix Organic Light-Emitting Diode，AMOLED）中的主要驱动元件，直接关系平板显示装置的显示性能。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组（backlight module）。液晶显示面板的工作原理是在薄膜晶体管阵列基板（Thin Film Transistor Array Substrate，TFT Array Substrate）与彩色滤光片（Color Filter，CF）基板之间灌入液晶分子，并在两片基板上分别施加像素电压和公共电压，通过像素电压和公共电压之间形成的电场控制液晶分子的旋转方向，以将背光模组的光线透射出来产生画面。
在LCD制作过程中，有一道制程是对液晶做配向制程，使液晶有一定的预倾角，该制程被称为高垂直排列(High Vertical Alignment，HVA)制程；该HVA制程具体为：在阵列基板上用加电探针输入电压，电压传至整个面板，液晶在电压作用下产生偏转，形成预倾角，为使阵列基板能够用导电探针加电，需将重合阵列基板和CF基板的合板中的某一基板边缘切割掉一部分，露出对面基板可扎针区域，再进行HVA制程（例如在进行HVA制程之前将阵列基板边缘切割掉一部分，露出CF基板的可扎针区域）；现有技术中通常采用刀轮先切割阵列基板边缘，产生裂缝，然后通过裂片装置将阵列基板边缘的裂缝持续扩大，直至阵列基板边缘与主体完全分离开，然而随着阵列基板利用率越来越高，以及阵列基板走线排版紧张，阵列基板边缘需要切割掉部分有大块金属覆盖，因此现有的刀轮切割方式，因未能接触到金属，无法将金属切割，造成后续无法将阵列基板边缘去除。
 技术问题
本发明的目的在于提供一种基板切割装置，能够保证正常分离基板的待去除区域，有利于后续的HVA制程的实现。
本发明的目的还在于提供一种基板切割方法，能够保证正常分离基板的待去除区域，有利于后续的HVA制程的实现。
 技术解决方案
为实现上述目的，本发明提供了一种基板切割装置，包括：裂片单元、设于所述裂片单元一侧的刀轮以及激光探测发生器；
所述激光探测发生器用于探测待切割的基板的切割线位置是否有金属层，并在探测到金属层时产生激光切割该金属层，在未探测到金属层时不产生激光；
所述刀轮用于沿着切割线切割部分待切割的基板；
所述裂片单元用于分离切割过的基板的待去除区域。
所述裂片单元包括相对设置的上裂片和下裂片以及连接所述下裂片的伺服电机。
所述切割过的基板的待去除区域被夹持在上裂片和下裂片之间。
所述伺服电机用于驱动下裂片产生波浪扭动动作以分离切割过的基板的待去除区域。
所述下裂片面向于切割过的基板的待去除区域的一侧设有真空吸附区域，该真空吸附区域用于吸附住待去除区域。
本发明还提供一种基板切割方法，包括如下步骤：
步骤S1、提供基板切割装置；所述基板切割装置包括：裂片单元、设于所述裂片单元一侧的刀轮以及激光探测发生器；
步骤S2、所述激光探测发生器探测待切割的基板的切割线位置是否有金属层；当探测到金属层时产生激光切割该金属层，当未探测到金属层时不产生激光；
步骤S3、所述刀轮沿着切割线切割部分待切割的基板；所述裂片单元分离切割过的基板的待去除区域。
所述裂片单元包括相对设置的上裂片和下裂片以及连接所述下裂片的伺服电机。
所述切割过的基板的待去除区域被夹持在上裂片和下裂片之间。
所述步骤S3中，所述伺服电机驱动下裂片产生波浪扭动动作以分离切割过的基板的待去除区域。
所述下裂片面向于切割过的基板的待去除区域的一侧设有真空吸附区域，该真空吸附区域吸附住待去除区域。
 有益效果
本发明的有益效果：本发明的基板切割装置包括：裂片单元、设于所述裂片单元一侧的刀轮以及激光探测发生器；该基板切割装置在切割待切割的基板时，所述激光探测发生器探测待切割的基板的切割线的位置是否有金属层，并在探测到金属层时产生激光切割该金属层，接着刀轮沿着切割线切割部分待切割的基板，使待切割的基板位于切割线的位置产生裂缝，接着裂片单元持续扩大该裂缝直至切割过的基板的待去除区域完全分离开，接着移除待去除区域，由于在刀轮切割待切割的基板之前，激光探测发生器已经将金属层切割开，保证裂片单元能够正常分离切割过的基板的待去除区域，有利于后续的HVA制程的实现。本发明的基板切割方法，能够保证正常分离切割过的基板的待去除区域，有利于后续的HVA制程的实现。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的基板切割装置的示意图；
图2为本发明的基板切割方法的流程图；
图3及图4为本发明的基板切割方法步骤S2的示意图；
图5及图6为本发明的基板切割方法步骤S3的示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种基板切割装置，包括：裂片单元10、设于所述裂片单元10一侧的刀轮20以及激光探测发生器30；
所述激光探测发生器30用于探测待切割的基板40的切割线41位置是否有金属层42，并在探测到金属层42时产生激光切割该金属层42，在未探测到金属层42时不产生激光；
所述刀轮20用于沿着切割线41切割部分待切割的基板40；
所述裂片单元10用于分离切割过的基板40的待去除区域43。
需要说明的是，本发明在基板切割装置中设置激光探测发生器30，该基板切割装置在切割待切割的基板40时，所述激光探测发生器30探测待切割的基板40的切割线41的位置是否有金属层42，并在探测到金属层42时产生激光切割该金属层42，接着刀轮20沿着切割线41切割部分待切割的基板40，使待切割的基板40位于切割线41的位置产生裂缝，接着裂片单元10持续扩大该裂缝直至切割过的基板40的待去除区域43完全分离开，接着移除切割过的基板40的待去除区域43，由于在刀轮20切割待切割的基板40之前，激光探测发生器30已经将金属层42切割开，保证裂片单元10能够正常分离切割过的基板40的待去除区域43，有利于后续的HVA制程的实现。
具体的，所述裂片单元10包括相对设置的上裂片11和下裂片12以及连接所述下裂片12的伺服电机13；所述切割过的基板40的待去除区域43被夹持在上裂片11和下裂片12之间；所述伺服电机13用于驱动下裂片12产生波浪扭动动作，以模拟手动裂片动作来扩大切割过的切割过的基板40位于切割线41的位置的裂缝，分离切割过的基板40的待去除区域43。
进一步的，所述下裂片12面向于切割过的基板40的待去除区域43的一侧设有真空吸附区域121，该真空吸附区域121用于吸附住待去除区域43，并且可以向任意方向撕扯待去除区域43，进一步分离待去除区域43，此外当待去除区域43完全分离开时，可以破真空取消吸附待去除区域43，便于更好地移除待去除区域43。
具体的，本发明的基板切割装置可以用于切割待进行HVA制程的液晶面板的基板。例如，该液晶面板包括相对设置的TFT阵列基板和CF基板，该CF基板面向于TFT阵列基板的待去除区域一侧具有扎针区域，通过本发明的基板切割装置切割该液晶面板的TFT阵列基板，能够正常分离TFT阵列基板的待去除区域，以暴露出CF基板上的扎针区域，通过加电探针与扎针区域接触输入电压，实现液晶面板的HVA制程。
请参阅图2，基于上述的基板切割装置，本发明还提供一种基板切割方法，包括如下步骤：
步骤S1、请参阅图1，提供基板切割装置；所述基板切割装置包括：裂片单元10、设于所述裂片单元10一侧的刀轮20以及激光探测发生器30；
步骤S2、请参阅图3及图4，所述激光探测发生器30探测待切割的基板40的切割线41位置是否有金属层42；当探测到金属层42时产生激光切割该金属层42，当未探测到金属层42时不产生激光；
步骤S3、请参阅图5及图6，所述刀轮20沿着切割线41切割部分待切割的基板40；所述裂片单元10分离切割过的基板40的待去除区域43。
需要说明的是，本发明在基板切割方法通过激光探测发生器30探测待切割的基板40的切割线41的位置是否有金属层42，并在探测到金属层42时产生激光切割该金属层42，接着刀轮20沿着切割线41切割部分待切割的基板40，使待切割的基板40位于切割线41的位置产生裂缝，接着裂片单元10持续扩大该裂缝直至切割过的基板40的待去除区域43完全分离开，接着移除切割过的基板40的待去除区域43，由于在刀轮20切割待切割的基板40之前，激光探测发生器30已经将金属层42切割开，保证裂片单元10能够正常分离切割过的基板40的待去除区域43，有利于后续的HVA制程的实现。
具体的，所述裂片单元10包括相对设置的上裂片11和下裂片12以及连接所述下裂片12的伺服电机13；所述切割过的基板40的待去除区域43被夹持在上裂片11和下裂片12之间；所述伺服电机13用于驱动下裂片12产生波浪扭动动作，以模拟手动裂片动作来扩大切割过的切割过的基板40位于切割线41的位置的裂缝，分离切割过的基板40的待去除区域43。
进一步的，所述下裂片12面向于切割过的基板40的待去除区域43的一侧设有真空吸附区域121，该真空吸附区域121用于吸附住待去除区域43，并且可以向任意方向撕扯待去除区域43，进一步分离待去除区域43，此外当待去除区域43完全分离开时，可以破真空取消吸附待去除区域43，便于更好地移除待去除区域43。
具体的，本发明的基板切割方法可以用于切割待进行HVA制程的液晶面板的基板。例如，该液晶面板包括相对设置的TFT阵列基板和CF基板，该CF基板面向于TFT阵列基板的待去除区域一侧具有扎针区域，通过本发明的基板切割方法切割该液晶面板的TFT阵列基板，能够正常分离TFT阵列基板的待去除区域，以暴露出CF基板上的扎针区域，通过加电探针与扎针区域接触输入电压，实现液晶面板的HVA制程。
综上所述，本发明的基板切割装置包括：裂片单元、设于所述裂片单元一侧的刀轮以及激光探测发生器；该基板切割装置在切割待切割的基板时，所述激光探测发生器探测待切割的基板的切割线的位置是否有金属层，并在探测到金属层时产生激光切割该金属层，接着刀轮沿着切割线切割部分待切割的基板，使待切割的基板位于切割线的位置产生裂缝，接着裂片单元持续扩大该裂缝直至切割过的基板的待去除区域完全分离开，接着移除待去除区域，由于在刀轮切割待切割的基板之前，激光探测发生器已经将金属层切割开，保证裂片单元能够正常分离切割过的基板的待去除区域，有利于后续的HVA制程的实现。本发明的基板切割方法，能够保证正常分离切割过的基板的待去除区域，有利于后续的HVA制程的实现。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种基板切割装置，包括：裂片单元、设于所述裂片单元一侧的刀轮以及激光探测发生器；
    所述激光探测发生器用于探测待切割的基板的切割线位置是否有金属层，并在探测到金属层时产生激光切割该金属层，在未探测到金属层时不产生激光；
    所述刀轮用于沿着切割线切割部分待切割的基板；
    所述裂片单元用于分离切割过的基板的待去除区域。
  2. 如权利要求1所述的基板切割装置，其中，所述裂片单元包括相对设置的上裂片和下裂片以及连接所述下裂片的伺服电机。
  3. 如权利要求2所述的基板切割装置，其中，所述切割过的基板的待去除区域被夹持在上裂片和下裂片之间。
  4. 如权利要求2所述的基板切割装置，其中，所述伺服电机用于驱动下裂片产生波浪扭动动作以分离切割过的基板的待去除区域。
  5. 如权利要求3所述的基板切割装置，其中，所述下裂片面向于切割过的基板的待去除区域的一侧设有真空吸附区域，该真空吸附区域用于吸附住待去除区域。
  6. 一种基板切割方法，包括如下步骤：
    步骤S1、提供基板切割装置；所述基板切割装置包括：裂片单元、设于所述裂片单元一侧的刀轮以及激光探测发生器；
    步骤S2、所述激光探测发生器探测待切割的基板的切割线位置是否有金属层；当探测到金属层时产生激光切割该金属层，当未探测到金属层时不产生激光；
    步骤S3、所述刀轮沿着切割线切割部分待切割的基板；所述裂片单元分离切割过的基板的待去除区域。
  7. 如权利要求6所述的基板切割方法，其中，所述裂片单元包括相对设置的上裂片和下裂片以及连接所述下裂片的伺服电机。
  8. 如权利要求7所述的基板切割方法，其中，所述切割过的基板的待去除区域被夹持在上裂片和下裂片之间。
  9. 如权利要求7所述的基板切割方法，其中，所述步骤S3中，所述伺服电机驱动下裂片产生波浪扭动动作以分离切割过的基板的待去除区域。
  10. 如权利要求8所述的基板切割方法，其中，所述下裂片面向于切割过的基板的待去除区域的一侧设有真空吸附区域，该真空吸附区域吸附住待去除区域。
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117347A (en) * 1996-07-10 2000-09-12 Nec Corporation Method of separating wafers into individual die
JP2010188411A (ja) * 2009-02-20 2010-09-02 Fuji Xerox Co Ltd 樹脂フィルム媒体、及び樹脂フィルム媒体の製造方法
CN102515494A (zh) * 2011-12-05 2012-06-27 深圳市华星光电技术有限公司 一种玻璃基板切割装置和方法
CN103085106A (zh) * 2013-02-01 2013-05-08 四川虹视显示技术有限公司 Oled基板切割系统
CN103715139A (zh) * 2012-09-28 2014-04-09 株式会社东芝 用于制造显示器件的方法
CN107042541A (zh) * 2017-04-19 2017-08-15 惠科股份有限公司 基板切割机和基板切割控制方法
CN107482134A (zh) * 2017-08-09 2017-12-15 武汉华星光电半导体显示技术有限公司 柔性显示器及其制造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117347A (en) * 1996-07-10 2000-09-12 Nec Corporation Method of separating wafers into individual die
JP2010188411A (ja) * 2009-02-20 2010-09-02 Fuji Xerox Co Ltd 樹脂フィルム媒体、及び樹脂フィルム媒体の製造方法
CN102515494A (zh) * 2011-12-05 2012-06-27 深圳市华星光电技术有限公司 一种玻璃基板切割装置和方法
CN103715139A (zh) * 2012-09-28 2014-04-09 株式会社东芝 用于制造显示器件的方法
CN103085106A (zh) * 2013-02-01 2013-05-08 四川虹视显示技术有限公司 Oled基板切割系统
CN107042541A (zh) * 2017-04-19 2017-08-15 惠科股份有限公司 基板切割机和基板切割控制方法
CN107482134A (zh) * 2017-08-09 2017-12-15 武汉华星光电半导体显示技术有限公司 柔性显示器及其制造方法

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