WO2020107681A1 - 量子点彩膜基板及其制备方法 - Google Patents

量子点彩膜基板及其制备方法 Download PDF

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Publication number
WO2020107681A1
WO2020107681A1 PCT/CN2019/072080 CN2019072080W WO2020107681A1 WO 2020107681 A1 WO2020107681 A1 WO 2020107681A1 CN 2019072080 W CN2019072080 W CN 2019072080W WO 2020107681 A1 WO2020107681 A1 WO 2020107681A1
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sub
quantum dot
substrate
pixel regions
pixel
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PCT/CN2019/072080
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English (en)
French (fr)
Inventor
杨超群
黄长治
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武汉华星光电技术有限公司
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Priority to US16/461,975 priority Critical patent/US11391982B2/en
Publication of WO2020107681A1 publication Critical patent/WO2020107681A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy

Definitions

  • the present disclosure relates to the field of display, and in particular to a color film substrate and a method for preparing a color film substrate.
  • the absorption and emission wavelengths of quantum dot materials change with size, and have the advantages of concentrated emission spectrum, high color purity and easy adjustment of the emission color by the size, structure or composition of quantum dot materials.
  • the application of quantum dot materials in display devices can effectively improve the color gamut and color reproduction capabilities of display devices.
  • the quantum dot liquid crystal display device relies on the quantum dot material under backlight excitation, and electrons and holes are combined to emit light to realize color display.
  • Quantum dot materials have wider absorption peaks and narrower emission peaks, so that they can exhibit higher purity in color display, thereby improving the color gamut of the liquid crystal display device and increasing the competitiveness of the liquid crystal display panel.
  • the red quantum dot material, the green quantum dot material and the blue quantum dot material in the quantum dot layer need to be separately prepared in different processes, the manufacturing process is complicated, and the production capacity is low.
  • Patent No. CN105301827A discloses a preparation method of a quantum dot color film substrate and a quantum dot color film substrate.
  • the core of the solution is to provide a quantum dot color film substrate, including a substrate, a filter layer and a quantum dot layer; quantum The dot layer includes a first quantum dot layer located on the red sub-pixel region and the green sub-region, and a second quantum dot layer located on the blue sub-pixel region.
  • the quantum dot layer is formed by quantum dot glue; the quantum dot glue is obtained by mixing red quantum dot material, green quantum dot material and photoinitiator in thermosetting glue.
  • the red quantum dot material and the green quantum dot material in the first quantum dot layer emit red light and green light together under blue excitation.
  • the quantum dot material in the second quantum dot layer does not emit light under illumination. But the manufacturing process is still complicated and the production capacity is low.
  • the red quantum dot material, the green quantum dot material and the blue quantum dot material in the quantum dot layer need to be separately prepared in different processes, the manufacturing process is complicated, and the production capacity is low.
  • a quantum dot color film substrate including:
  • a substrate the substrate includes a plurality of first sub-pixel regions, a plurality of second sub-pixel regions, and a plurality of third sub-pixel regions;
  • the materials of the second sub-pixel regions and the third sub-pixel regions are the same, and the materials of the second sub-pixel regions and the third sub-pixel regions are the same as those of the first The material of one sub-pixel area is different.
  • a quantum dot color film substrate wherein the substrate has a blue quantum dot material on the first sub-pixel area.
  • the second sub-pixel area has a green filter film
  • the third sub-pixel area has a red filter film
  • a quantum dot color film substrate wherein the substrate has a black matrix separating the first sub-pixel area, the second sub-pixel area, and the third sub-pixel area.
  • materials of the second sub-pixel regions and the third sub-pixel regions include a red quantum dot material and a green quantum dot material.
  • the present disclosure also proposes a quantum dot display panel, which includes a blue light backlight module, a quantum dot color film substrate placed on the blue light backlight module, and a liquid crystal panel placed on the quantum dot color film substrate.
  • the quantum dot color film substrate includes:
  • a substrate the substrate includes a plurality of first sub-pixel regions, a plurality of second sub-pixel regions, and a plurality of third sub-pixel regions;
  • the materials of the second sub-pixel regions and the third sub-pixel regions are the same, and the materials of the second sub-pixel regions and the third sub-pixel regions are the same as those of the first The material of one sub-pixel area is different.
  • a blue quantum dot material is provided on the first sub-pixel area of the substrate.
  • the second sub-pixel area has a green filter film
  • the third sub-pixel area has a red filter film
  • a black matrix separates the first sub-pixel area, the second sub-pixel area, and the third sub-pixel area on the substrate.
  • the materials of the second sub-pixel regions and the third sub-pixel regions include a red quantum dot material and a green quantum dot material.
  • the disclosure also proposes a method for preparing a quantum dot color film substrate, including the following steps:
  • Step S1 Provide a substrate including a plurality of first sub-pixel regions, a plurality of second sub-pixel regions, and a plurality of third sub-pixel regions.
  • Step S2 Coating a layer of photoresist material on the substrate, the photoresist material includes a second quantum dot material and a third quantum dot material.
  • Step S3 Patterning the photoresist material to remove the photoresist material on the first sub-pixel area.
  • a method for preparing a quantum dot color film substrate according to an embodiment of the present disclosure wherein in the step of providing a substrate, a green filter film and the third layer are provided on the second sub-pixel area of the substrate A red filter film is provided on the sub-pixel area.
  • the step of patterning the photoresist material further includes:
  • the photoresist material is exposed, developed, and baked.
  • a black matrix is provided on the substrate to separate the first sub-pixel region and the second sub-pixel The pixel area and the third sub-pixel area.
  • the mixing ratio of the second quantum dot material and the third quantum dot material is adjusted according to product demand characteristics.
  • the first quantum dot material is blue quantum dot material.
  • the second quantum dot material is green quantum dot material
  • the third quantum dot material is red quantum dot material
  • the disclosure also proposes a method for manufacturing a quantum dot display panel, including the following steps:
  • Step P1 Provide a blue light backlight module.
  • Step P2 Provide a quantum dot color film substrate to be placed on the blue backlight module.
  • Step P3. Provide a liquid crystal panel on the quantum dot color film substrate.
  • the preparation method of the quantum dot color film substrate includes the following steps:
  • Step S1 Provide a substrate including a plurality of first sub-pixel regions, a plurality of second sub-pixel regions, and a plurality of third sub-pixel regions.
  • Step S2 Coating a layer of photoresist material on the substrate, the photoresist material includes a second quantum dot material and a third quantum dot material.
  • Step S3 Patterning the photoresist material to remove the photoresist material on the first sub-pixel area.
  • the substrate has a layer of first quantum dot material on the first sub-pixel area.
  • the first A red filter film is provided on the three sub-pixel regions.
  • a black matrix is provided on the substrate to separate the first sub-pixel area and the second sub-pixel Area and the third sub-pixel area.
  • the present disclosure provides a quantum dot color film substrate, wherein the materials of the second sub-pixel regions and the third sub-pixel regions are the same and the The materials of the second sub-pixel regions and the third sub-pixel regions are different from the materials of the first sub-pixel regions.
  • the quantum dot materials on the red sub-pixel area and the green sub-pixel area are prepared in the same photomask process, and the mixing ratio of the red quantum dot material and the green quantum dot material will be adjusted according to the characteristics of the product requirements, thereby ensuring the color while saving A process technology to increase the factory's production capacity.
  • 1 is a schematic diagram showing the steps of the method for preparing a quantum dot color film substrate
  • 2 is a schematic diagram showing the steps of the manufacturing method of the disclosed quantum dot display panel
  • step 3 is a schematic diagram of the method of step 1 of the disclosed method for preparing a quantum dot color film substrate
  • step 4 is a schematic diagram of the method of step 2 of the disclosed method for preparing a quantum dot color film substrate
  • step 3 is a schematic diagram of the exposure process of step 3 of the disclosed method for preparing a quantum dot color film substrate
  • step 6 is a schematic diagram of the development process of step 3 of the disclosed method for preparing a quantum dot color film substrate
  • FIG. 10 is a spectrum diagram of the excitation light after the photoresist material of the quantum dot color film substrate is irradiated with blue light after passing through the green filter film.
  • an embodiment of the present disclosure provides a quantum dot color film substrate 100, including:
  • a substrate 1 the substrate includes a plurality of first sub-pixel regions 2, a plurality of second sub-pixel regions 3, and a plurality of third sub-pixel regions 4.
  • the first sub-pixel regions 2 are, for example, blue sub-pixel regions
  • the second sub-pixel regions 3 are, for example, green sub-pixel regions
  • the third sub-pixel regions 4 are, for example, The red sub-pixel area
  • the invention is not limited to this. Persons of ordinary skill in the art can appropriately select different color combinations according to this description.
  • the materials of the second sub-pixel regions 3 and the third sub-pixel regions 4 are the same and the materials and the materials of the second sub-pixel regions 3 and the third sub-pixel regions 4 are The materials of the first sub-pixel regions 2 are different.
  • a quantum dot color film substrate 100 wherein the first sub-pixel region 2 has a first quantum dot material 21, and the first quantum dot material 21 is a blue quantum dot material.
  • a quantum dot color film substrate 100 wherein the second sub-pixel region 3 has a layer of green filter film 6 and the third sub-pixel region 4 has a layer of red filter film 7 .
  • a quantum dot color film substrate 100 according to an embodiment of the present disclosure, wherein the substrate 1 has a black matrix 11 separating the first sub-pixel region 2, the second sub-pixel region 3, and the third sub-pixel Pixel area 4.
  • a quantum dot color film substrate 100 wherein the materials of the second sub-pixel regions 3 and the third sub-pixel regions 4 include a third quantum dot material 9 and a first Two quantum dot materials 10.
  • the third quantum dot material 9 is a red quantum dot material
  • the second quantum dot material 10 is a green quantum dot material.
  • the present invention is not limited to this. Persons of ordinary skill in the art can appropriately select different color combinations according to this description.
  • FIG. 1 is a schematic diagram of the steps of the manufacturing method of the quantum dot color film substrate disclosed.
  • An embodiment of the present disclosure provides a method for preparing a quantum dot color film substrate, including the following steps:
  • Step S1 Provide a substrate including a plurality of first sub-pixel regions, a plurality of second sub-pixel regions, and a plurality of third sub-pixel regions.
  • Step S2 Coating a layer of photoresist material on the substrate, the photoresist material includes a second quantum dot material and a third quantum dot material.
  • Step S3 Patterning the photoresist material to remove the photoresist material on the first sub-pixel area.
  • step S1 of a method for manufacturing a quantum dot color film substrate includes: providing a substrate 1 including a plurality of first sub-pixel regions 2. A second sub-pixel area 3 and several third sub-pixel areas 4.
  • the first sub-pixel regions 2 are, for example, blue sub-pixel regions
  • the second sub-pixel regions 3 are, for example, green sub-pixel regions
  • the third sub-pixel regions 4 are, for example, The red sub-pixel area
  • the invention is not limited to this. Persons of ordinary skill in the art can appropriately select different color combinations according to this description.
  • a method for preparing a quantum dot color film substrate according to an embodiment of the present disclosure wherein the substrate 1 has a layer of first quantum dot material 5 on the first sub-pixel region 2.
  • a method for manufacturing a quantum dot color film substrate wherein in the step S1 of providing a substrate, a green filter film 6 is provided on the second sub-pixel area 3 of the substrate 1, A red filter film 7 is provided on the third sub-pixel area 4.
  • step S2 of a method for preparing a quantum dot color film substrate includes: coating a layer of photoresist material 8 on the substrate 1, the photoresist The material 8 includes a third quantum dot material 9 and a second quantum dot material 10.
  • FIG. 5 and FIG. 6 a method for preparing a quantum dot color film substrate according to an embodiment of the present disclosure, wherein the patterning process of the photoresist material may be photolithography or other methods.
  • Step S3 further includes:
  • Step S3-1 Expose the photoresist material
  • Step S3-2 Develop and bake the photoresist material.
  • a method for preparing a quantum dot color film substrate according to an embodiment of the present disclosure wherein in the step S1 of providing a substrate, the substrate has a black matrix 11 separating the first sub-pixel region 2 and the second The sub-pixel area 3 and the third sub-pixel area 4.
  • a method for manufacturing a quantum dot color film substrate according to an embodiment of the present disclosure wherein the mixing ratio of the third quantum dot material 9 and the second quantum dot material 10 is adjusted according to product demand characteristics.
  • the first quantum dot material 5 is a blue quantum dot material.
  • the second quantum dot material 10 is a green quantum dot material, and the third quantum dot material 9 is a red quantum dot material.
  • the present invention is not limited to this. Persons of ordinary skill in the art can appropriately select different color combinations according to this description.
  • the quantum dot material is one or more of group II-VI quantum dot materials and group I-III-VI quantum dot materials.
  • the quantum dot material is one or more of ZnCdSe2, CdSe, CdTe, CuInS2, or ZnCuInS3.
  • the present invention also proposes a method for manufacturing a quantum dot display panel, including the following steps:
  • Step P1 Provide a blue light backlight module.
  • Step P2 Provide a quantum dot color film substrate to be placed on the blue backlight module.
  • Step P3. Provide a liquid crystal panel on the quantum dot color film substrate.
  • the preparation method of the quantum dot color film substrate includes the following steps:
  • Step S1 Provide a substrate including a plurality of first sub-pixel regions, a plurality of second sub-pixel regions, and a plurality of third sub-pixel regions.
  • Step S2 Coating a layer of photoresist material on the substrate, the photoresist material includes a second quantum dot material and a third quantum dot material.
  • Step S3 Patterning the photoresist material to remove the photoresist material on the first sub-pixel area.
  • the first sub-pixel regions 2 are, for example, blue sub-pixel regions
  • the second sub-pixel regions 3 are, for example, green sub-pixel regions
  • the third sub-pixel regions 4 are, for example, The red sub-pixel area
  • the invention is not limited to this. Persons of ordinary skill in the art can appropriately select different color combinations according to this description.
  • the first quantum dot material 5 is a blue quantum dot material.
  • the second quantum dot material 10 is a green quantum dot material, and the third quantum dot material 9 is a red quantum dot material.
  • the present invention is not limited to this. Persons of ordinary skill in the art can appropriately select different color combinations according to this description.
  • the application mode of the quantum dot color film substrate of the present disclosure Specifically, when the blue light beam 12 emitted by the blue backlight module passes through the quantum dot color film substrate of the present disclosure, the blue light beam 12 passes through the blue The blue quantum dot material 5 of the pixel area 2 excites the blue quantum dot material 5 to emit blue light 13.
  • the blue light beam 12 passes through the red quantum dot material 9 and the green quantum dot material 10 of the green sub-pixel region 3 to excite the red quantum dot material 9 and the green quantum dot material 10 to emit red light 15 and green light 14 correspondingly. Then, when the red light 15 and the green light 14 pass through the green filter film 6, the red light 15 is filtered out and only the green light 14 passes.
  • the blue light beam 12 passes through the red quantum dot material 9 and the green quantum dot material 10 of the red sub-pixel region 4 to excite the red quantum dot material 9 and the green quantum dot material 10 to emit red light 15 and green light 14 correspondingly. Then, when the red light 15 and the green light 14 pass through the red filter film 7, the green light 14 is filtered and only the red light 15 passes.
  • the excited light contains components of red light and green light.
  • the quantum dot materials on the red sub-pixel area and the green sub-pixel area are prepared in the same photomask process, and the mixing ratio of the red quantum dot material and the green quantum dot material will be adjusted according to the product demand characteristics.
  • the color saves a process and improves the factory's production capacity.

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Abstract

一种量子点彩膜基板（100）及量子点彩膜基板（100）的制备方法。量子点彩膜基板（100）包括：一基板（1），基板（1）包括数个第一子像素区域（2）、数个第二子像素区域（3）、及数个第三子像素区域（4）；其中数个第二子像素区域（3）及数个第三子像素区域（4）的材料相同且数个第二子像素区域（3）及数个第三子像素区域（4）的材料与数个第一子像素区域（2）的材料不同。

Description

量子点彩膜基板及其制备方法 技术领域
本揭示涉及显示领域，特别涉及一种彩膜基板、及彩膜基板的制备方法。
 背景技术
量子点材料的吸收及发射波长随尺寸变化而变化，具有发光光谱集中，色纯度高且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节的优点。将量子点材料应用在显示设备中可有效提升显示设备的色域及色彩还原能力。
量子点液晶显示装置是依靠量子点材料在背光激发下，电子和空穴复合发光来实现颜色显示的。量子点材料拥有较宽的吸收峰，和较窄的发射峰，使其在颜色显示上可以表现更高的纯度，从而提升液晶显示装置的色域，增加液晶显示面板的竞争力。
在现有量子点液晶显示装置中，量子点层中红色量子点材料、绿色量子点材料以及蓝色量子点材料需要在不同的工序中单独制备，制程工艺复杂，产能较低。
专利编号CN105301827A公开了一种量子点彩膜基板的制备方法及量子点彩膜基板，其方案的核心是：提供了一种量子点彩膜基板，包括基板、滤光层以及量子点层；量子点层包括位于红色子像素区域和绿色子区域上的第一量子点层，及位于蓝色子像素区域上的第二量子点层。所述量子点层由量子点胶形成；所述量子点胶由红色量子点材料、绿色量子点材料及光引发剂混合于热固胶中得到。并公布了所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝色激发下共同发出红光和绿光。所述第二量子点层内的量子点材料在光照下不发光。但制程工艺仍复杂，产能较低。
因此，目前亟需一种显示面板以解决上述问题。
 技术问题
在现有量子点液晶显示装置中，量子点层中红色量子点材料、绿色量子点材料以及蓝色量子点材料需要在不同的工序中单独制备，制程工艺复杂，产能较低。
 技术解决方案
为解决上述技术问题，本揭示提供一种量子点彩膜基板，包括：
一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域；其中
所述数个第二子像素区域及所述数个第三子像素区域的材料相同且所述数个第二子像素区域及所述数个第三子像素区域的材料与所述数个第一子像素区域的材料不同。
于本揭示其中的一实施例的量子点彩膜基板，其中所述基板的所述第一子像素区域上具有一蓝色量子点材料。
于本揭示其中的一实施例的量子点彩膜基板，其中所述第二子像素区域上具有一层绿色滤光膜、所述第三子像素区域上具有一层红色滤光膜。
于本揭示其中的一实施例的量子点彩膜基板，其中所述基板上具有一黑色矩阵分隔所述第一子像素区域、所述第二子像素区域、及所述第三子像素区域。
于本揭示其中的一实施例的量子点彩膜基板，其中所述数个第二子像素区域及所述数个第三子像素区域的材料包括一红色量子点材料及一绿色量子点材料。
本揭示还提出了一种量子点显示面板，包括一蓝光背光模块、一量子点彩膜基板置于所述蓝光背光模块上、及一液晶面板置于所述量子点彩膜基板上，其中所述量子点彩膜基板，包括：
一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域；其中
所述数个第二子像素区域及所述数个第三子像素区域的材料相同且所述数个第二子像素区域及所述数个第三子像素区域的材料与所述数个第一子像素区域的材料不同。
于本揭示其中的一实施例的量子点显示面板，其中所述基板的所述第一子像素区域上具有一蓝色量子点材料。
于本揭示其中的一实施例的量子点显示面板，其中所述第二子像素区域上具有一层绿色滤光膜、所述第三子像素区域上具有一层红色滤光膜。
于本揭示其中的一实施例的量子点显示面板，其中所述基板上具有一黑色矩阵分隔所述第一子像素区域、所述第二子像素区域、及所述第三子像素区域。
于本揭示其中的一实施例的量子点显示面板，其中所述数个第二子像素区域、及所述数个第三子像素区域的材料包括一红色量子点材料及一绿色量子点材料。
本揭示还提出了一种量子点彩膜基板的制备方法，包括如下步骤：
步骤S1、提供一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域。
步骤S2、在所述基板上涂布一层光阻材料，所述光阻材料中包括第二量子点材料及第三量子点材料。
步骤S3、对光阻材料进行图案化处理，去除第一子像素区域上的光阻材料。
于本揭示其中的一实施例的量子点彩膜基板的制备方法，其中所述基板的所述第一子像素区域上具有一层第一量子点材料。
本揭示的一实施例的量子点彩膜基板的制备方法，其中所述提供一基板的步骤中，所述基板的所述第二子像素区域上具有一层绿色滤光膜、所述第三子像素区域上具有一层红色滤光膜。
于本揭示其中的一实施例的量子点彩膜基板的制备方法，其中对光阻材料进行图案化处理的步骤更包括：
对所述光阻材料进行曝光、显影、及烘烤。
于本揭示其中的一实施例的量子点彩膜基板的制备方法，其中所述提供一基板的步骤中，所述基板上具有一黑色矩阵分隔所述第一子像素区域、所述第二子像素区域、及所述第三子像素区域。
于本揭示其中的一实施例的量子点彩膜基板的制备方法，其中所述第二量子点材料及所述第三量子点材料混合的比例依照产品需求特性进行调整。
于本揭示其中的一实施例的量子点彩膜基板的制备方法，其中所述第一量子点材料为蓝色量子点材料。
于本揭示其中的一实施例的量子点彩膜基板的制备方法，其中所述第二量子点材料为绿色量子点材料，所述第三量子点材料为红色量子点材料。
本揭示还提出了一种量子点显示面板的制备方法，包括如下步骤：
步骤P1、提供一蓝光背光模块。
步骤P2、提供一量子点彩膜基板置于所述蓝光背光模块上。
步骤P3、提供一液晶面板置于所述量子点彩膜基板上。其中量子点彩膜基板的制备方法，包括如下步骤：
步骤S1、提供一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域。
步骤S2、在所述基板上涂布一层光阻材料，所述光阻材料中包括第二量子点材料及第三量子点材料。
步骤S3、对光阻材料进行图案化处理，去除第一子像素区域上的光阻材料。
于本揭示其中的一实施例的量子点显示面板的制备方法，其中所述基板的所述第一子像素区域上具有一层第一量子点材料。
于本揭示其中的一实施例的量子点显示面板的制备方法，其中所述提供一基板的步骤中，所述基板的所述第二子像素区域上具有一层绿色滤光膜、所述第三子像素区域上具有一层红色滤光膜。
于本揭示其中的一实施例的量子点显示面板的制备方法，其中所述提供一基板的步骤中，所述基板上具有一黑色矩阵分隔所述第一子像素区域、所述第二子像素区域、及所述第三子像素区域。
 有益效果
相较于现有技术，为解决上述技术问题，本揭示提供一种量子点彩膜基板，其中所述数个第二子像素区域及所述数个第三子像素区域的材料相同且所述数个第二子像素区域及所述数个第三子像素区域的材料与所述数个第一子像素区域的材料不同。通过红色子像素区域和绿色子像素区域上的量子点材料在同一道光罩工艺中制备，红色量子点材料和绿色量子点材料混合的比例会依照产品需求特性进行调整，在保证颜色的同时进而节省一道制程工艺，提升工厂产能。
 附图说明
图1为本揭示量子点彩膜基板的制备方法步骤示意图；
图2为本揭示量子点显示面板的制备方法步骤示意图；
图3为本揭示量子点彩膜基板制备方法的步骤1的方法示意图；
图4为本揭示量子点彩膜基板制备方法的步骤2的方法示意图；
图5为本揭示量子点彩膜基板制备方法的步骤3的曝光制程示意图；
图6为本揭示量子点彩膜基板制备方法的步骤3的显影制程示意图；
图7为本揭示量子点彩膜基板的应用方式示意图；
图8为本揭示量子点彩膜基板的光阻材料被蓝光照射后所激发的光的光谱图；
图9为本揭示量子点彩膜基板的光阻材料被蓝光照射后的激发光经过红色滤光膜后的光谱图；及
图10为本揭示量子点彩膜基板的光阻材料被蓝光照射后的激发光经过绿色滤光膜后的光谱图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本揭示可用以实施的特定实施例。
为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。
在图中，结构相似的单元是以相同标号表示。
请参阅图6，本揭示的一实施例提供一种量子点彩膜基板100，包括：
一基板1，所述基板包括数个第一子像素区域2、数个第二子像素区域3、及数个第三子像素区域4。
具体的，所述数个第一子像素区域2例如是蓝色子像素区域，所述数个第二子像素区域3例如是绿色子像素区域，所述数个第三子像素区域4例如是红色子像素区域，本发明不限于此。本领域的一般技艺人士当可依此说明适当选择不同的颜色组合。
所述数个第二子像素区域3及所述数个第三子像素区域4的材料相同且所述数个第二子像素区域3及所述数个第三子像素区域4的材料与所述数个第一子像素区域2的材料不同。
本揭示的一实施例的量子点彩膜基板100，其中所述第一子像素区域2上具有一第一量子点材料21，所述第一量子点材料21为蓝色量子点材料。
本揭示的一实施例的量子点彩膜基板100，其中所述第二子像素区域3上具有一层绿色滤光膜6、所述第三子像素区域4上具有一层红色滤光膜7。
本揭示的一实施例的量子点彩膜基板100，其中所述基板1上具有一黑色矩阵11分隔所述第一子像素区域2、所述第二子像素区域3、及所述第三子像素区域4。
本揭示的一实施例的量子点彩膜基板100，其中所述数个第二子像素区域3、及所述数个第三子像素区域4的材料包括一第三量子点材料9及一第二量子点材料10。所述第三量子点材料9为红色量子点材料，所述第二量子点材料10为绿色量子点材料。本发明不限于此。本领域的一般技艺人士当可依此说明适当选择不同的颜色组合。
请参阅图1，图1为本揭示量子点彩膜基板的制备方法步骤示意图。
本揭示的一实施例提供一种量子点彩膜基板的制备方法，包括如下步骤：
步骤S1、提供一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域。
步骤S2、在所述基板上涂布一层光阻材料，所述光阻材料中包括第二量子点材料及第三量子点材料。
步骤S3、对光阻材料进行图案化处理，去除第一子像素区域上的光阻材料。
请参阅图3，具体的，本揭示的一实施例的一种量子点彩膜基板的制备方法的步骤S1、包括：提供一基板1，所述基板包括数个第一子像素区域2、数个第二子像素区域3、及数个第三子像素区域4。
具体的，所述数个第一子像素区域2例如是蓝色子像素区域，所述数个第二子像素区域3例如是绿色子像素区域，所述数个第三子像素区域4例如是红色子像素区域，本发明不限于此。本领域的一般技艺人士当可依此说明适当选择不同的颜色组合。
本揭示的一实施例的量子点彩膜基板的制备方法，其中所述基板1的所述第一子像素区域2上具有一层第一量子点材料5。
本揭示的一实施例的量子点彩膜基板的制备方法，其中所述提供一基板的步骤S1中，所述基板1的所述第二子像素区域3上具有一层绿色滤光膜6、所述第三子像素区域4上具有一层红色滤光膜7。
请参阅图4，具体的，本揭示的一实施例的一种量子点彩膜基板的制备方法的步骤S2、包括：在所述基板1上涂布一层光阻材料8，所述光阻材料8中包括第三量子点材料9及第二量子点材料10。
请参阅图5及图6，本揭示的一实施例的量子点彩膜基板的制备方法，其中对光阻材料进行图案化处理的方式可以是光刻或其他方式。
步骤S3更包括：
步骤S3-1：对所述光阻材料进行曝光、步骤S3-2：对所述光阻材料进行显影及烘烤。
本揭示的一实施例的量子点彩膜基板的制备方法，其中所述提供一基板的步骤S1中，所述基板上具有一黑色矩阵11分隔所述第一子像素区域2、所述第二子像素区域3、及所述第三子像素区域4。
本揭示的一实施例的量子点彩膜基板的制备方法，其中所述第三量子点材料9及所述第二量子点材料10混合的比例依照产品需求特性进行调整。
具体的，所述第一量子点材料5为蓝色量子点材料。所述第二量子点材料10为绿色量子点材料，所述第三量子点材料9为红色量子点材料。本发明不限于此。本领域的一般技艺人士当可依此说明适当选择不同的颜色组合。
具体的，所述量子点材料为II-VI族量子点材料、I-III-VI族量子点材料中的一种或多种。具体的，所述量子点材料为ZnCdSe2, CdSe, CdTe, CuInS2, 或ZnCuInS3中的一种或多种。
请参阅图2及图1，本发明还提出了一种量子点显示面板的制备方法，包括如下步骤：
步骤P1、提供一蓝光背光模块。
步骤P2、提供一量子点彩膜基板置于所述蓝光背光模块上。
步骤P3、提供一液晶面板置于所述量子点彩膜基板上。其中量子点彩膜基板的制备方法，包括如下步骤：
步骤S1、提供一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域。
步骤S2、在所述基板上涂布一层光阻材料，所述光阻材料中包括第二量子点材料及第三量子点材料。
步骤S3、对光阻材料进行图案化处理，去除第一子像素区域上的光阻材料。
具体的，所述数个第一子像素区域2例如是蓝色子像素区域，所述数个第二子像素区域3例如是绿色子像素区域，所述数个第三子像素区域4例如是红色子像素区域，本发明不限于此。本领域的一般技艺人士当可依此说明适当选择不同的颜色组合。
具体的，所述第一量子点材料5为蓝色量子点材料。所述第二量子点材料10为绿色量子点材料，所述第三量子点材料9为红色量子点材料。本发明不限于此。本领域的一般技艺人士当可依此说明适当选择不同的颜色组合。
请参阅图7，本揭示量子点彩膜基板的应用方式，具体的，当蓝色背光模块所发出的蓝色光束12通过本揭示的量子点彩膜基板时，蓝色光束12通过蓝色子像素区域2的蓝色量子点材料5，激发蓝色量子点材料5发出蓝光13。
蓝色光束12通过绿色子像素区域3的红色量子点材料9及绿色量子点材料10，激发红色量子点材料9及绿色量子点材料10对应发出红光15及绿光14。然后，红光15及绿光14通过绿色滤光膜6时，红光15被滤掉而仅绿光14通过。
蓝色光束12通过红色子像素区域4的红色量子点材料9及绿色量子点材料10，激发红色量子点材料9及绿色量子点材料10对应发出红光15及绿光14。然后，红光15及绿光14通过红色滤光膜7时，绿光14被滤掉而仅红光15通过。
请参阅图8-10，由图8的量子点彩膜基板的光阻材料被蓝光照射后所激发的光的光谱图中可看出，激发的光含有红光及绿光的成分。
由图9的量子点彩膜基板的光阻材料被蓝光照射后的激发光经过红色滤光膜后的光谱图中可看出，被激发的红光及绿光经过红色滤光膜后仅剩红光的成分。
由图10的量子点彩膜基板的光阻材料被蓝光照射后的激发光经过绿色滤光膜后的光谱图中可看出，被激发的红光及绿光经过绿色滤光膜后仅剩绿光的成分。
有益效果：本揭示通过红色子像素区域和绿色子像素区域上的量子点材料在同一道光罩工艺中制备，红色量子点材料和绿色量子点材料混合的比例会依照产品需求特性进行调整，在保证颜色的同时进而节省一道制程工艺，提升工厂产能。
尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。

Claims (15)

  1. 一种量子点彩膜基板，包括：
    一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域；其中
    所述数个第二子像素区域及所述数个第三子像素区域的材料相同且所述数个第二子像素区域及所述数个第三子像素区域的材料与所述数个第一子像素区域的材料不同。
  2. 根据权利要求1所述的量子点彩膜基板，其中所述基板的所述第一子像素区域上具有一蓝色量子点材料。
  3. 根据权利要求1所述的量子点彩膜基板，其中所述第二子像素区域上具有一层绿色滤光膜、所述第三子像素区域上具有一层红色滤光膜。
  4. 根据权利要求1所述的量子点彩膜基板，其中所述基板上具有一黑色矩阵分隔所述第一子像素区域、所述第二子像素区域、及所述第三子像素区域。
  5. 根据权利要求1所述的量子点彩膜基板，其中所述数个第二子像素区域、及所述数个第三子像素区域的材料包括一红色量子点材料及一绿色量子点材料。
  6. 一种量子点显示面板，包括：
    一蓝光背光模块；
    一量子点彩膜基板置于所述蓝光背光模块上；及
    一液晶面板置于所述量子点彩膜基板上，其中所述量子点彩膜基板，包括：
    一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域；其中
    所述数个第二子像素区域及所述数个第三子像素区域的材料相同且所述数个第二子像素区域及所述数个第三子像素区域的材料与所述数个第一子像素区域的材料不同。
  7. 根据权利要求6所述的量子点显示面板，其中所述基板的所述第一子像素区域上具有一蓝色量子点材料。
  8. 根据权利要求6所述的量子点显示面板，其中所述第二子像素区域上具有一层绿色滤光膜、所述第三子像素区域上具有一层红色滤光膜。
  9. 根据权利要求6所述的量子点显示面板，其中所述基板上具有一黑色矩阵分隔所述第一子像素区域、所述第二子像素区域、及所述第三子像素区域。
  10. 根据权利要求6所述的量子点显示面板，其中所述数个第二子像素区域、及所述数个第三子像素区域的材料包括一红色量子点材料及一绿色量子点材料。
  11. 一种量子点彩膜基板的制备方法，包括如下步骤：
    步骤S1、提供一基板，所述基板包括数个第一子像素区域、数个第二子像素区域、及数个第三子像素区域；
    步骤S2、在所述基板上涂布一层光阻材料；及
    步骤S3、对光阻材料进行图案化处理，去除第一子像素区域上的光阻材料；其中
    所述光阻材料中包括一第二量子点材料及一第三量子点材料。
  12. 根据权利要求11所述的量子点彩膜基板的制备方法，其中所述基板的所述第一子像素区域上具有一层第一量子点材料。
  13. 根据权利要求11所述的量子点彩膜基板的制备方法，其中所述提供一基板的步骤中，所述基板的所述第二子像素区域上具有一层绿色滤光膜、所述第三子像素区域上具有一层红色滤光膜。
  14. 根据权利要求11所述的量子点彩膜基板的制备方法，其中对光阻材料进行图案化处理的步骤更包括：
    对所述光阻材料进行曝光、显影、及烘烤。
  15. 根据权利要求11所述的量子点彩膜基板的制备方法，其中所述提供一基板的步骤中，所述基板上具有一黑色矩阵分隔所述第一子像素区域、所述第二子像素区域、及所述第三子像素区域。
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