WO2020107589A1 - 蒸镀装置 - Google Patents

蒸镀装置 Download PDF

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Publication number
WO2020107589A1
WO2020107589A1 PCT/CN2018/123149 CN2018123149W WO2020107589A1 WO 2020107589 A1 WO2020107589 A1 WO 2020107589A1 CN 2018123149 W CN2018123149 W CN 2018123149W WO 2020107589 A1 WO2020107589 A1 WO 2020107589A1
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Prior art keywords
evaporator
gas chamber
vapor deposition
heating
heating unit
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English (en)
French (fr)
Inventor
陈良
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/347,884 priority Critical patent/US20200199738A1/en
Publication of WO2020107589A1 publication Critical patent/WO2020107589A1/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Definitions

  • the invention relates to the field of vapor deposition, in particular to a vapor deposition device.
  • organic materials need to be placed in the evaporation source of the evaporation equipment for evaporation, and the formed evaporation gas is sprayed onto the upper substrate through the nozzle of the evaporation source and then condensed on the substrate On the surface, the evaporation operation is completed.
  • the evaporator 20 since the evaporator 20 is elongated, the pressure of the vapor in the cavity of the evaporator 20 is unbalanced, so that the evaporation rate of the organic molecules ejected from the nozzle 12 at different positions is inconsistent, resulting in coating on the substrate The thickness is uneven, and this defect is especially noticeable when manufacturing large-sized OLEDs.
  • the existing vapor deposition device has an elongated evaporator and the pressure of the vapor in the evaporator chamber is unbalanced, so that the evaporation rate of the organic molecules ejected from the nozzles at different positions is inconsistent, resulting in uneven coating thickness on the substrate. This defect is particularly noticeable when manufacturing large-sized OLEDs.
  • the purpose of the present invention is to provide a vapor deposition device that can control the vapor deposition rate of organic molecules and effectively improve the uniformity of the thickness of the coating film.
  • the present invention provides a vapor deposition apparatus, which is characterized by comprising:
  • An evaporator used to contain and evaporate the material to be evaporated
  • a gas chamber is used to collect the evaporated gas of the material to be vapor-deposited, and a plurality of nozzles arranged at intervals are arranged on one end surface of the gas chamber, and the plurality of nozzles are arranged linearly and equidistantly in the Describe the end face of the gas chamber;
  • a plurality of conveying pipes are arranged at intervals between the evaporator and the gas chamber, and the two ends of each conveying pipe communicate with the evaporator and the gas chamber respectively;
  • a heating unit provided on the periphery of the evaporator, the gas chamber and the plurality of conveying tubes, for heating the evaporator, the gas chamber and the plurality of conveying tubes;
  • a controller electrically connected to the heating unit, is used to control the temperature of the heating unit, so that the temperature and the air pressure in the gas chamber are maintained at a predetermined value, respectively.
  • the heating unit includes a first heating element disposed on the periphery of the evaporator, and the first heating element is electrically connected to the controller.
  • the heating unit further includes at least one second heating element disposed on the periphery of the plurality of delivery tubes, and the at least one second heating element is electrically connected to the controller.
  • the heating unit further includes a third heating element disposed on the periphery of the gas chamber, and the third heating element is electrically connected to the controller.
  • the present invention provides an evaporation apparatus, which is characterized by comprising: an evaporator for accommodating and evaporating the material to be vaporized; and a gas chamber for collecting the material to be vaporized
  • a plurality of spaced nozzles are provided on one end surface of the gas container; a plurality of delivery tubes are provided between the evaporator and the gas container, and two of each delivery tube End is respectively connected to the evaporator and the gas chamber;
  • a heating unit is provided at the periphery of the evaporator, the gas chamber and the plurality of conveying pipes, for heating the evaporator, the The gas chamber and the plurality of delivery tubes; and a controller, electrically connected to the heating unit, for controlling the temperature of the heating unit, so that the temperature and the gas pressure in the gas chamber are maintained at The predetermined value.
  • the heating unit includes a first heating element disposed on the periphery of the evaporator, and the first heating element is electrically connected to the controller.
  • the heating unit further includes at least one second heating element disposed on the periphery of the plurality of delivery tubes, and the at least one second heating element is electrically connected to the controller.
  • the heating unit further includes a third heating element disposed on the periphery of the gas chamber, and the third heating element is electrically connected to the controller.
  • the evaporator is a crucible.
  • the plurality of delivery tubes are spaced between the evaporator and the gas chamber.
  • the heating unit is one of a heating wire and a heating sheet.
  • the plurality of nozzles are linearly and equidistantly arranged on the end surface of the gas chamber.
  • the invention provides a vapor deposition device which can control the vapor deposition rate of organic molecules and effectively improve the uniformity of the thickness of the coating film.
  • FIG. 2 is a schematic structural diagram of a vapor deposition apparatus provided by an embodiment of the present invention.
  • FIG. 2 shows a schematic structural diagram of a vapor deposition apparatus provided by an embodiment of the present invention.
  • the vapor deposition apparatus 2 includes: an evaporator 20, a gas chamber 22, a delivery pipe 24, a heating unit 26, and a controller 28.
  • the evaporator 20 is used to contain and evaporate the material to be evaporated.
  • the evaporator 20 may be a crucible, and the material to be evaporated is an organic material.
  • the gas chamber 22 is used to collect the evaporation gas of the material to be vapor-deposited, and a plurality of nozzles 220 are provided on one end of the gas chamber 22 at intervals.
  • the gas chamber 22 is a long box.
  • a plurality of nozzles 220 are linearly and uniformly arranged on the end surface of the gas chamber 22 for spraying the evaporated gas.
  • a plurality of conveying pipes 24 are provided between the evaporator 20 and the gas chamber 22, and the two ends of each conveying pipe 24 communicate with the evaporator 20 and the gas chamber 22 respectively.
  • the plurality of delivery tubes 24 are spaced between the evaporator 20 and the gas chamber 22.
  • the heating unit 26 is provided on the periphery of the evaporator 20, the gas chamber 22, and the plurality of delivery pipes 24, and is used to heat the evaporator 2020, the gas chamber 22, and the plurality of delivery pipes 24.
  • the heating unit 26 is one of a heating wire and a heating sheet.
  • the controller 28 will Control the temperature of different second heating elements 262 so that the temperature of the evaporated gas released by each conveying pipe 24 tends to be the same, for example: control the high temperature of the second heating element 262 on the conveying pipes 24 at both ends of the evaporator 20 The temperature of the second heating element 262 on the delivery pipe 24 located in the center of the evaporator 20.
  • the controller 28 will control the temperature of the third heating element 263 so that the boil-off gas is maintained in the state of gas molecules,
  • the gas pressure in the gas chamber 22 is maintained at a predetermined value.
  • a vapor deposition device mainly controls the temperature of the heating unit through a controller, thereby controlling the vapor deposition rate of organic molecules, and achieving the purpose of improving the uniformity of the coating thickness.
  • the vapor deposition device provided by the present invention mainly controls the temperature of the heating unit through a controller, thereby controlling the vapor deposition rate of organic molecules, and achieving the purpose of improving the uniformity of the thickness of the coating film.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种蒸镀装置包括：蒸发器、气体容室、输送管、加热单元及控制器。其中，蒸发器用于容置并蒸发待蒸镀材料。气体容室用于收集待蒸镀材料的蒸发气体，在气体容室的一端面上设有多个间隔设置的喷嘴。多个输送管设于蒸发器及气体容室之间，且各输送管的二端分别连通于蒸发器及气体容室。加热单元设于蒸发器、气体容室及多个输送管的外围，用于加热蒸发器、气体容室及多个输送管。控制器电性连接于加热单元，用于控制加热单元的温度，使得气体容室内的温度和气压分别维持在一预定数值。

Description

蒸镀装置 技术领域
本发明涉及蒸镀领域，尤其涉及一种蒸镀装置。
 背景技术
在有机发光二极体面板(OLED)的生产中，需将有机材料置于蒸镀设备的蒸发源中进行蒸发，所形成的蒸发气体通过蒸发源的喷嘴喷射到上方的基板后，冷凝于基板表面，便完成蒸镀作业。
如图1所示，为现有的蒸镀装置的结构示意图，蒸镀装置1包括用于容置并蒸发有机材料的蒸发器20，蒸发器20的顶部设置有若干喷嘴12。当正常蒸镀作业时，所述蒸发器20被加热器(图中未示出)加热，蒸发器20内的待蒸镀材料受热蒸发成气体，再经过喷嘴12喷向基板(图中未示出)并冷凝成薄膜。对于现有的蒸镀装置，由于蒸发器20呈长条形，蒸发器20腔室内蒸气的压力不平衡，使得从不同位置喷嘴12喷出有机分子的蒸镀速率不一致，从而造成基板上的镀膜厚度不均匀，此缺陷在制作大尺寸OLED时尤其明显。
因此，有必要提供一种蒸镀装置，以解决上述镀膜厚度不均匀之问题。
 技术问题
现有的蒸镀装置，由于蒸发器呈长条形，蒸发器腔室内蒸气的压力不平衡，使得从不同位置喷嘴喷出有机分子的蒸镀速率不一致，从而造成基板上的镀膜厚度不均匀，此缺陷在制作大尺寸OLED时尤其明显。
 技术解决方案
本发明的目的在于提供一种蒸镀装置，可以控制有机分子的蒸镀速率，有效提升镀膜厚度的均匀性。
为实现上述目的，本发明提供一种蒸镀装置，其特征在于，包括:
一蒸发器，用于容置并蒸发待蒸镀材料；
一气体容室，用于收集所述待蒸镀材料的蒸发气体，在所述气体容室的一端面上设有多个间隔设置的喷嘴，所述多个喷嘴线性均匀等距地排列于所述气体容室的端面上；
多个输送管，间隔设置于所述蒸发器及所述气体容室之间，且各所述输送管的二端分别连通于所述蒸发器及所述气体容室；
一加热单元，设于所述蒸发器、所述气体容室及所述多个输送管的外围，用于加热所述蒸发器、所述气体容室及所述多个输送管；以及
一控制器，电性连接于所述加热单元，用于控制所述加热单元的温度，使得所述气体容室内的温度和气压分别维持在一预定数值。
在一些实施方式中，所述加热单元包括一第一加热元件，设于所述蒸发器的外围，所述第一加热元件电性连接于所述控制器。
在一些实施方式中，所述加热单元还包括至少一个第二加热元件，设于所述多个输送管的外围，所述至少一个第二加热元件电性连接于所述控制器。
在一些实施方式中，所述加热单元还包括一第三加热元件，设于所述气体容室的外围，所述第三加热元件电性连接于所述控制器。
在一些实施方式中，所述蒸发器为坩埚。
在一些实施方式中，所述气体容室为长条箱体。
在一些实施方式中，所述加热单元为加热丝或加热片。
为实现上述目的，本发明提供一种蒸镀装置，其特征在于，包括:一蒸发器，用于容置并蒸发待蒸镀材料；一气体容室，用于收集所述待蒸镀材料的蒸发气体，在所述气体容室的一端面上设有多个间隔设置的喷嘴；多个输送管，设于所述蒸发器及所述气体容室之间，且各所述输送管的二端分别连通于所述蒸发器及所述气体容室；一加热单元，设于所述蒸发器、所述气体容室及所述多个输送管的外围，用于加热所述蒸发器、所述气体容室及所述多个输送管；以及一控制器，电性连接于所述加热单元，用于控制所述加热单元的温度，使得所述气体容室内的温度和气压分别维持在一预定数值。
在一些实施方式中，所述加热单元包括一第一加热元件，设于所述蒸发器的外围，所述第一加热元件电性连接于所述控制器。
在一些实施方式中，所述加热单元还包括至少一个第二加热元件，设于所述多个输送管的外围，所述至少一个第二加热元件电性连接于所述控制器。
在一些实施方式中，所述加热单元还包括一第三加热元件，设于所述气体容室的外围，所述第三加热元件电性连接于所述控制器。
在一些实施方式中，所述蒸发器为坩埚。
在一些实施方式中，所述多个输送管间隔设置于所述蒸发器及所述气体容室之间。
在一些实施方式中，所述气体容室为长条箱体。
在一些实施方式中，所述加热单元为加热丝、加热片的其中一种。
在一些实施方式中，所述多个喷嘴线性均匀等距地排列于所述气体容室的端面上。
 有益效果
本发明提供一种蒸镀装置，可以控制有机分子的蒸镀速率，有效提升镀膜厚度的均匀性。
 附图说明
为让本发明的特征以及技术内容能更明显易懂，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考用，并非用来对本发明加以限制。
图1为现有的蒸镀装置的结构示意图;
图2为本发明实施例提供的一种蒸镀装置的结构示意图。
 本发明的实施方式
为了使本发明的目的、技术手段及其效果更加清楚明确，以下将结合附图对本发明作进一步地阐述。应当理解，此处所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，并不用于限定本发明。
请参考图2，其示出本发明实施例提供的一种蒸镀装置的结构示意图，蒸镀装置2包括:蒸发器20、气体容室22、输送管24、加热单元26及控制器28。其中，蒸发器20用于容置并蒸发待蒸镀材料。在一些实施方式中，蒸发器20可以为坩埚，且待蒸镀材料为一种有机材料。
气体容室22用于收集所述待蒸镀材料的蒸发气体，在气体容室22的一端面上设有多个间隔设置的喷嘴220。在一些实施方式中，气体容室22为长条箱体。另外，多个喷嘴220线性均匀等距地排列于气体容室22的端面上，用于喷射所述蒸发气体。
多个输送管24设于蒸发器20及气体容室22之间，且各输送管24的二端分别连通于蒸发器20及气体容室22。在本发明实施方式中，多个输送管24间隔设置于蒸发器20及气体容室22之间。
加热单元26设于蒸发器20、气体容室22及多个输送管24的外围，用于加热蒸发器2020、气体容室22及多个输送管24。在一些实施方式中，加热单元26为加热丝、加热片的其中一种。
控制器28电性连接于加热单元26，用于控制加热单元26的温度，使得气体容室22内的温度和气压分别维持在一预定数值。在一些实施方式中，所述预定数值视需求的镀膜厚度而定。
继续参考图2，在本发明实施方式中，加热单元26包括第一加热元件261，第一加热元件261设于蒸发器20的外围且电性连接于控制器28。加热单元26还包括至少一个第二加热元件262，第二加热元件262设于多个输送管24的外围且电性连接于控制器28。进一步地，加热单元26还包括第三加热元件263，第三加热元件263设于气体容室22的外围且电性连接于控制器28。在图2所示的实施例中，第一加热元件261、第二加热元件262及第三加热元件263具体地为加热丝，但本发明的应用不限于上述的举例，第一加热元件261、第二加热元件262及第三加热元件263亦可为加热片或其他种类的加热元件。
当第一加热元件261加热蒸发器20内的待蒸镀材料时，蒸发器20内不同位置产生的蒸发气体的温度不尽相同，因此当蒸发气体通过多个输送管24时，控制器28会控制不同的第二加热元件262的温度，使得每一个输送管24释放出来的蒸发气体的温度趋于一致，例如：控制位于蒸发器20两端的输送管24上的第二加热元件262的温度高于位于蒸发器20中央的输送管24上的第二加热元件262的温度。此外，当蒸发气体通过多个输送管24后，会在气体容室22内混合以进行气压平衡，而且控制器28会控制第三加热元件263的温度，使得蒸发气体维持于气体分子状态，且使得气体容室22内的气压维持在一预定数值。
根据理想气体方程序(PV = nRT)可知，当气压(P)、温度(T)维持不变，则气体分子数目(n)或气体体积(V)将为恒定值。由于本发明中气体容室22内的温度和气压始终维持不变，使得多个喷嘴220喷出蒸发气体的速率或有机分子数目相同，从而使得镀膜的厚度均匀相同，达到均匀蒸镀的目的。
综上所述，本发明提供的一种蒸镀装置, 主要通过控制器来控制加热单元的温度，从而控制有机分子的蒸镀速率，达到提升镀膜厚度的均匀性的目的。
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。
 工业实用性
本发明提供的蒸镀装置, 主要通过控制器来控制加热单元的温度，从而控制有机分子的蒸镀速率，达到提升镀膜厚度的均匀性的目的。

Claims (16)

  1. 一种蒸镀装置, 其特征在于, 包括:
    一蒸发器，用于容置并蒸发待蒸镀材料；
    一气体容室，用于收集所述待蒸镀材料的蒸发气体，在所述气体容室的一端面上设有多个间隔设置的喷嘴，所述多个喷嘴线性均匀等距地排列于所述气体容室的端面上；
    多个输送管，间隔设置于所述蒸发器及所述气体容室之间，且各所述输送管的二端分别连通于所述蒸发器及所述气体容室；
    一加热单元，设于所述蒸发器、所述气体容室及所述多个输送管的外围，用于加热所述蒸发器、所述气体容室及所述多个输送管；以及
    一控制器，电性连接于所述加热单元，用于控制所述加热单元的温度，使得所述气体容室内的温度和气压分别维持在一预定数值。
  2. 如权利要求1所述的蒸镀装置，其特征在于：所述加热单元包括一第一加热元件，设于所述蒸发器的外围，所述第一加热元件电性连接于所述控制器。
  3. 如权利要求2所述的蒸镀装置，其特征在于：所述加热单元还包括至少一个第二加热元件，设于所述多个输送管的外围，所述至少一个第二加热元件电性连接于所述控制器。
  4. 如权利要求3所述的蒸镀装置，其特征在于：所述加热单元还包括一第三加热元件，设于所述气体容室的外围，所述第三加热元件电性连接于所述控制器。
  5. 如权利要求1所述的蒸镀装置，其特征在于：所述蒸发器为坩埚。
  6. 如权利要求1所述的蒸镀装置，其特征在于：所述气体容室为长条箱体。
  7. 如权利要求1所述的蒸镀装置，其特征在于：所述加热单元为加热丝或加热片。
  8. 一种蒸镀装置, 其特征在于, 包括:
    一蒸发器，用于容置并蒸发待蒸镀材料；
    一气体容室，用于收集所述待蒸镀材料的蒸发气体，在所述气体容室的一端面上设有多个间隔设置的喷嘴；
    多个输送管，设于所述蒸发器及所述气体容室之间，且各所述输送管的二端分别连通于所述蒸发器及所述气体容室；
    一加热单元，设于所述蒸发器、所述气体容室及所述多个输送管的外围，用于加热所述蒸发器、所述气体容室及所述多个输送管；以及
    一控制器，电性连接于所述加热单元，用于控制所述加热单元的温度，使得所述气体容室内的温度和气压分别维持在一预定数值。
  9. 如权利要求8所述的蒸镀装置，其特征在于：所述加热单元包括一第一加热元件，设于所述蒸发器的外围，所述第一加热元件电性连接于所述控制器。
  10. 如权利要求9所述的蒸镀装置，其特征在于：所述加热单元还包括至少一个第二加热元件，设于所述多个输送管的外围，所述至少一个第二加热元件电性连接于所述控制器。
  11. 如权利要求10所述的蒸镀装置，其特征在于：所述加热单元还包括一第三加热元件，设于所述气体容室的外围，所述第三加热元件电性连接于所述控制器。
  12. 如权利要求8所述的蒸镀装置，其特征在于：所述蒸发器为坩埚。
  13. 如权利要求8所述的蒸镀装置，其特征在于：所述多个输送管间隔设置于所述蒸发器及所述气体容室之间。
  14. 如权利要求8所述的蒸镀装置，其特征在于：所述气体容室为长条箱体。
  15. 如权利要求8所述的蒸镀装置，其特征在于：所述加热单元为加热丝或加热片。
  16. 如权利要求8所述的蒸镀装置，其特征在于：所述多个喷嘴线性均匀等距地排列于所述气体容室的端面上。
PCT/CN2018/123149 2018-11-26 2018-12-24 蒸镀装置 Ceased WO2020107589A1 (zh)

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CN104099571A (zh) * 2013-04-01 2014-10-15 上海和辉光电有限公司 蒸发源组件和薄膜沉积装置和薄膜沉积方法
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