WO2020100608A1 - 半導体レーザおよび電子機器 - Google Patents

半導体レーザおよび電子機器 Download PDF

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Publication number
WO2020100608A1
WO2020100608A1 PCT/JP2019/042758 JP2019042758W WO2020100608A1 WO 2020100608 A1 WO2020100608 A1 WO 2020100608A1 JP 2019042758 W JP2019042758 W JP 2019042758W WO 2020100608 A1 WO2020100608 A1 WO 2020100608A1
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Prior art keywords
region
semiconductor
layer
semiconductor laser
ridge portion
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English (en)
French (fr)
Japanese (ja)
Inventor
耕太 徳田
佐藤　慎也
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2020556015A priority Critical patent/JP7404267B2/ja
Priority to US17/291,859 priority patent/US20220013989A1/en
Publication of WO2020100608A1 publication Critical patent/WO2020100608A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Definitions

  • the present disclosure relates to a semiconductor laser and an electronic device including the semiconductor laser.
  • the edge emitting semiconductor laser is disclosed in, for example, Patent Documents 1 to 3 below.
  • a semiconductor laser includes a semiconductor laminated portion.
  • the semiconductor laminated portion includes a first conductive type first semiconductor layer, a second conductive type second semiconductor layer laminated on the first semiconductor layer and provided with a strip-shaped ridge portion, and an active layer.
  • the semiconductor laminated portion is further at least part of a region not facing the ridge portion, and at a position deeper than at least the active layer, the impurity concentration of the second conductivity type faces the ridge portion of the second semiconductor layer.
  • the impurity region has a higher impurity concentration than the second conductivity type impurity region.
  • the electronic device includes a semiconductor laser as a light source.
  • the semiconductor laser provided in the electronic device has the same configuration as the above semiconductor laser.
  • the second conductivity type impurity concentration is set to a second impurity concentration at least at a position deeper than the active layer in at least a part of the region not facing the ridge portion.
  • An impurity region having a higher impurity concentration than the second conductivity type in a region of the semiconductor layer facing the ridge portion is provided. This hinders the transport of electrons or holes to the active layer on both sides of the ridge.
  • FIG. 3 is a diagram illustrating a top surface configuration example of a semiconductor laser according to the first embodiment of the present disclosure. It is a figure showing the cross-sectional structural example in the AA line of the semiconductor laser of FIG.
  • FIG. 2 is a diagram illustrating a cross-sectional configuration example of the semiconductor laser of FIG. 1 taken along line BB.
  • FIG. 3 is a diagram illustrating a planar configuration example of a second region and a fourth region in the semiconductor laser of FIG. 2. It is a figure showing an example of a relation between p type impurity concentration of the 2nd field, and the amount of reduction of threshold current. It is a figure showing an example of the current path in the semiconductor laser concerning an example.
  • FIG. 9 is a diagram illustrating an example of a method for manufacturing the semiconductor laser of FIG. 1. It is a figure showing an example of the manufacturing process following FIG. 10A. It is a figure showing an example of the manufacturing process following FIG. 10B. It is a figure showing an example of the manufacturing process following FIG. 10C. It is a figure showing an example of the manufacturing process following FIG. 10D.
  • FIG. 10E It is a figure showing an example of the manufacturing process following FIG. 10E. It is a figure showing an example of the manufacturing process following FIG. 10F. It is a figure showing an example of the manufacturing process following FIG. 10G. It is a figure showing an example of the manufacturing process following FIG. 10H.
  • FIG. 10C is a diagram illustrating an example of the manufacturing process following FIG. 10I.
  • FIG. 9 is a diagram illustrating a modification of the cross-sectional configuration of the semiconductor laser of FIG. 2.
  • FIG. 8 is a diagram showing a modification of the cross-sectional configuration of the semiconductor laser of FIG. 3.
  • FIG. 9 is a diagram illustrating a modification of the cross-sectional configuration of the semiconductor laser of FIG. 2.
  • FIG. 12 is a diagram illustrating a modified example of the cross-sectional configuration of the semiconductor laser of FIG. 11.
  • FIG. 9 is a diagram illustrating a modification of the cross-sectional configuration of the semiconductor laser of FIG. 2.
  • FIG. 12 is a diagram illustrating a modified example of the cross-sectional configuration of the semiconductor laser of FIG. 11.
  • FIG. 9 is a diagram illustrating a modification of the cross-sectional configuration of the semiconductor laser of FIG. 2.
  • FIG. 12 is a diagram illustrating a modified example of the cross-sectional configuration of the semiconductor laser of FIG. 11.
  • FIG. 9 is a diagram illustrating a modification of the cross-sectional configuration of the semiconductor laser of FIG. 2.
  • FIG. 12 is a diagram illustrating a modified example of the cross-sectional configuration of the semiconductor laser of FIG. 11. It is a figure showing the example of schematic composition of the distance measuring device concerning a 2nd embodiment of this indication.
  • FIG. 13 is a diagram illustrating a schematic configuration example of a projector according to
  • FIG. 1 shows an example of a top surface configuration of a semiconductor laser 1 according to this embodiment.
  • the semiconductor laser 1 has a structure in which a semiconductor laminated portion 20 described later is sandwiched between a pair of resonator end faces S1 and S2 from the resonator direction.
  • the resonator end face S1 is a front end face through which laser light is emitted to the outside
  • the resonator end face S2 is a rear end face that is arranged so as to face the resonator end face S1. Therefore, the semiconductor laser 1 is a kind of so-called edge emitting semiconductor laser.
  • the semiconductor laser 1 (semiconductor laminated portion 20) includes resonator end faces S1 and S2 facing each other in the resonator direction, and a convex ridge portion 20A sandwiched between the resonator end face S1 and the resonator end face S2. ing.
  • the ridge portion 20A has a strip shape extending in the resonator direction.
  • the ridge portion 20A is formed, for example, by etching removal from the surface of the contact layer 26 described later to the middle of the upper cladding layer 25 described later. That is, a part of the upper cladding layer 25 is formed on both sides of the ridge portion 20A.
  • the width of the ridge portion 20A is, for example, 0.5 ⁇ m or more and 5.0 ⁇ m or less.
  • One end surface of the ridge portion 20A is exposed to the resonator end surface S1, and the other end surface of the ridge portion 20A is exposed to the resonator end surface S2.
  • the resonator end faces S1 and S2 are faces formed by cleavage.
  • the resonator end faces S1 and S2 function as a resonator mirror, and the ridge portion 20A functions as an optical waveguide.
  • the resonator end face S1 is provided with, for example, an antireflection film configured so that the reflectance at the resonator end face S1 is about 15%.
  • the resonator end face S2 is provided with, for example, a multilayer reflective film configured such that the reflectance at the resonator end face S2 is about 85%.
  • the semiconductor laser 1 semiconductor layered portion 20 further has end faces S3 and S4 that face each other in a direction intersecting the cavity direction (hereinafter, referred to as “width direction”). That is, the end surfaces S3 and S4 are formed on both sides of the ridge portion 20A.
  • the end surfaces S3 and S4 are surfaces formed by cutting by dicing.
  • Window structures 10A and 10B are provided at both ends of the ridge portion 20A.
  • the window structure 10A is formed in a region including the resonator end face S1, and the window structure 10B is formed in a region including the resonator end face S2.
  • the window structures 10A and 10B suppress destabilization of oscillation due to current flowing near the resonator end faces S1 and S2.
  • the contact layer 26 and the upper electrode layer 31 described later are not provided in the window structure 10B. Therefore, no current is directly injected into the window structure 10B from the upper electrode layer 31.
  • the window structures 10A and 10B may be appropriately omitted if necessary.
  • An insulating layer 32 is formed on the surface of the semiconductor laser 1 (semiconductor laminated portion 20). The insulating layer 32 protects the semiconductor stacked unit 20 and defines a region where a current is injected into the semiconductor stacked unit 20 (that is, a region where the semiconductor stacked unit 20 and the upper electrode layer 31 are in contact with each other).
  • FIG. 2 shows an example of a sectional structure of the semiconductor laser 1 taken along the line AA.
  • FIG. 3 shows an example of a sectional configuration of the semiconductor laser 1 taken along the line BB.
  • FIG. 2 shows a cross-sectional configuration example of the central portion of the semiconductor laser 1 in the cavity direction (extending direction of the ridge portion 20A).
  • FIG. 3 shows a cross-sectional configuration example in the vicinity of the cavity end faces S1 and S2 of the semiconductor laser 1 (window structures 10A and 10B).
  • the semiconductor laser 1 has a semiconductor laminated portion 20 on a substrate 10.
  • the semiconductor laminated portion 20 has, for example, a lower clad layer 21, a lower guide layer 22, an active layer 23, an upper guide layer 24, an upper clad layer 25, and a contact layer 26 in this order from the substrate 10 side.
  • the lower clad layer 21 and the lower guide layer 22 correspond to a specific example of “first semiconductor layer” of the present disclosure.
  • the upper guide layer 24, the upper cladding layer 25, and the contact layer 26 correspond to one specific example of the “second semiconductor layer” of the present disclosure.
  • the semiconductor stacked unit 20 may be further provided with a layer (for example, a buffer layer) other than the above layers.
  • the substrate 10 is, for example, an Si-doped n-type GaAs substrate.
  • the semiconductor laminated portion 20 is formed to include, for example, an Al x Ga 1-x As based (0 ⁇ x ⁇ 1) semiconductor material.
  • the semiconductor laminated portion 20 has a structure in which a p-type semiconductor layer is laminated on an n-type semiconductor layer.
  • the n-type corresponds to a specific example of “first conductivity type” of the present disclosure.
  • the p-type corresponds to a specific example of “second conductivity type” of the present disclosure.
  • the lower clad layer 21 corresponds to an n-type semiconductor layer
  • the lower guide layer 22, the active layer 23, the upper guide layer 24, the upper clad layer 25 and the contact layer 26 are p-type semiconductor layers. It corresponds to. That is, the active layer 23 is provided in the p-type semiconductor layer.
  • the lower clad layer 21 is made of, for example, Si-doped n-type Al x1 Ga 1 -x1 As.
  • the lower guide layer 22 is made of, for example, C-doped p-type Al x2 Ga 1 -x2 As.
  • the active layer 23 has, for example, a multiple quantum well structure.
  • the multiple quantum well structure is, for example, a structure in which barrier layers and well layers are alternately stacked.
  • the barrier layer is made of, for example, Al x3 Ga 1-x3 As.
  • the well layer is made of, for example, Al x4 Ga 1 -x4 As (x4> x3).
  • the dopant and doping concentration in the multiple quantum well structure forming the active layer 23 are adjusted so that the average electrical characteristics of the active layer 23 are p-type.
  • the upper guide layer 24 is made of, for example, C-doped p-type Al x5 Ga 1 -x5 As.
  • the upper cladding layer 25 is made of, for example, C-doped p-type Al x6 Ga 1 -x6 As.
  • the contact layer 26 is made of, for example, C-doped p-type GaAs.
  • the semiconductor laser 1 further includes an upper electrode layer 31 on the semiconductor laminated portion 20, and a lower electrode layer 33 on the back surface side of the semiconductor laminated portion 20.
  • the upper electrode layer 31 is formed on the ridge portion 20A and is in contact with the contact layer 26 formed on the ridge portion 20A.
  • the upper electrode layer 31 is in contact with the upper surface of the ridge portion 20A except the window structures 10A and 10B.
  • the upper electrode layer 31 has, for example, a structure in which a Ti layer, a Pt layer, and an Au layer are stacked in this order from the side close to the ridge portion 20A.
  • the upper electrode layer 31 has only to be electrically connected to the upper surface of the ridge portion 20A, and its layer structure is not limited to the above structure.
  • the lower electrode layer 33 is formed, for example, in contact with the back surface of the substrate 10.
  • the lower electrode layer 33 has, for example, a structure in which a Ti layer and an Al layer are stacked in this order from the side closer to the substrate 10.
  • the lower electrode layer 33 has only to be electrically connected to the substrate 10, and the layer configuration is not limited to the above configuration.
  • the lower electrode layer 33 may be in contact with the entire back surface of the substrate 10, or may be in contact with only a part of the back surface of the substrate 10.
  • impurity regions first region R1, second region R2, third region R3, fourth region R4 provided in the semiconductor laminated portion 20 will be described.
  • the semiconductor stacked unit 20 has a first region R1 in a region facing the ridge 20A.
  • the first region R1 is formed in the p-type semiconductor layer in the semiconductor laminated portion 20, and is formed, for example, in the semiconductor laminated portion 20 to a depth reaching the lower guide layer 22 from the contact layer 26. ..
  • the first region R1 is formed so as to extend in the resonator direction, and is formed, for example, in a region other than the window structures 10A and 10B in the semiconductor stacked unit 20.
  • the first region R1 is an impurity region containing p-type impurities.
  • the p-type impurity contained in the first region R1 is C, for example.
  • the p-type impurity concentration in the first region R1 is a value within the range of, for example, 1.0 ⁇ 10 16 cm ⁇ 3 or more and 4.0 ⁇ 10 18 cm ⁇ 3 or less.
  • the semiconductor laminated portion 20 has second regions R2 on both sides of the ridge portion 20A.
  • the second region R2 corresponds to a specific but not limitative example of “first impurity region” in one embodiment of the present disclosure.
  • Each of the second regions R2 is formed in the semiconductor laminated portion 20 on both sides of the ridge portion 20A and at a position deeper than at least the active layer 23.
  • Each second region R2 is formed not only in the p-type semiconductor layer in the semiconductor stacked unit 20 but also in the n-type semiconductor layer.
  • Each of the second regions R2 is provided in the semiconductor laminated portion 20 from a portion corresponding to the ridge of the ridge portion 20A (the upper surface of the upper cladding layer 25) to a position deeper than the active layer 23.
  • Each of the second regions R2 is formed, for example, in the semiconductor laminated portion 20 from a portion corresponding to the skirt of the ridge portion 20A (the upper surface of the upper cladding layer 25) to a depth reaching the lower cla
  • each of the second regions R2 is formed so as to extend in the resonator direction, and is formed in a region other than the window structures 10A and 10B in the semiconductor laminated portion 20, for example.
  • the one second region R2 is further formed in a region including the end surface S3, as shown in FIG. 4, for example.
  • the other second region R2 is further formed in a region including the end surface S4, for example, as shown in FIG.
  • Each second region R2 is an impurity region containing p-type impurities.
  • the p-type impurity contained in each second region R2 is, for example, Zn.
  • the p-type impurity concentration in each second region R2 is higher than the p-type impurity concentration in the first region R1, and is, for example, 1.0 ⁇ 10 17 cm ⁇ 3 or more and 2.0 ⁇ 10 19 cm ⁇ 3 or less. The value is within the range.
  • the p-type impurity concentration in each of the second regions R2 is preferably 6.0 ⁇ 10 17 / cm 3 or more, for example, as shown in FIG.
  • the horizontal axis of FIG. 5 is the p-type impurity concentration of the second region R2, and the vertical axis of FIG. 5 is the reduction amount of the threshold current.
  • the first region R1 it is not necessary that the p-type impurity concentration and the composition ratio of the constituent materials are uniform. In the first region R1, the p-type impurity concentration and the composition ratio of the constituent materials may be changed gently depending on the position.
  • the first region R1 may be composed of a plurality of layers having different p-type impurity concentrations and different composition ratios of constituent materials.
  • the second region R2 it is not necessary that the p-type impurity concentration and the composition ratio of the constituent materials be uniform. In the second region R2, the p-type impurity concentration and the composition ratio of the constituent materials may change gently depending on the position.
  • the second region R2 may be composed of a plurality of layers having different p-type impurity concentrations and composition ratios of constituent materials. In any case, it is preferable that the p-type impurity concentration in the second region R2 is higher than the p-type impurity concentration in the first region R1 at the common depth.
  • the semiconductor laminated portion 20 has third regions R3 on both sides of the ridge portion 20A.
  • Each third region R3 is located between the ridge portion 20A and the second region R2, and is located in a region other than the window structures 10A and 10B.
  • Each third region R3 is an impurity region containing p-type impurities.
  • the p-type impurity contained in each third region R3 is, for example, C.
  • the p-type impurity concentration in each third region R3 is higher than the p-type impurity concentration in the first region R1, for example, 1.0 ⁇ 10 16 cm ⁇ 3 or more and 4.0 ⁇ 10 18 cm ⁇ 3 or less. The value is within the range.
  • each second region R2 is formed in the semiconductor laminated portion 20 to a depth reaching the lower cladding layer 21 from the contact layer 26.
  • the interface between the bottom surface of each second region R2 and the lower clad layer 21 is formed at a position away from the active layer 23 on the substrate 10 side and forms a pn junction.
  • the bottom surface of each second region R2 is a pn junction formed by the second region R2 and the lower cladding layer 21. That is, the semiconductor laminated portion 20 has a pn junction on both sides of the ridge portion 20A at a position apart from the active layer 23 toward the substrate 10. This pn junction prevents injection of electrons from the lower electrode layer 33 to the active layer 23.
  • the low-resistance upper cladding layer 25 is also provided on both sides of the ridge portion 20A.
  • the holes injected from the upper electrode layer 31 can reach the vicinity of the end faces S3, S4 through the upper cladding layer 25.
  • the second regions R2 are formed on both sides of the ridge portion 20A, and a pn junction is formed at a position away from the active layer 23 toward the substrate 10. Therefore, for example, as shown in FIG. 6, electrons injected from the lower electrode layer 33 are prevented from being recombined with holes injected from the upper electrode layer 31 by this pn junction.
  • the amount of current (current leakage amount) flowing on both sides of the ridge portion 20A is significantly increased. Decrease.
  • the amount of current (the amount of current leakage) flowing on both sides of the ridge portion 20A becomes smaller as the distance between the bottom surface of the second region R2 (that is, the pn junction described above) and the active layer 23 increases.
  • the distance d between the bottom surface of the second region R2 (that is, the pn junction described above) and the active layer 23 is preferably 0.3 ⁇ m or more, for example, as shown in FIG.
  • FIG. 8 is the distance d between the bottom surface of the second region R2 (that is, the pn junction described above) and the active layer 23, and the vertical axis of FIG. 8 is the reduction amount of the threshold current.
  • FIG. 8 illustrates simulation results when the p-type impurity concentration of the second region R2 is 1.5 ⁇ 10 18 cm ⁇ 3 and 1.0 ⁇ 10 17 cm ⁇ 3 . From FIG.
  • the reduction amount of the threshold current when the p-type impurity concentration of the second region R2 is 1.0 ⁇ 10 17 cm ⁇ 3 is the maximum reduction amount of the threshold current (second When the p-type impurity concentration in the region R2 is 1.5 ⁇ 10 18 cm ⁇ 3 ), 50% or more of the reduction amount of the threshold current is that the distance d is 0.3 ⁇ m or more. It turns out that this is the case.
  • each second region R2 functions as a high resistance region in the semiconductor laminated portion 20.
  • the current path of the semiconductor laser 1 is narrower than that of the semiconductor laser 200 by the amount of each second region R2.
  • the threshold current of the semiconductor laser 1 becomes lower than the threshold current of the semiconductor laser 200.
  • a simulator using Maxwell's equations, Poisson's equations, rate equations, etc. can be used for the simulation of FIG.
  • the semiconductor laminated portion 20 further has a fourth region R4 in each of the region including the resonator end face S1 and the region including the resonator end face S2.
  • Each of the fourth regions R4 is a region including the resonator end faces S1 and S2 in the semiconductor stacked unit 20, and is formed at a position including at least the active layer 23.
  • Each fourth region R4 is formed, for example, not only in the p-type semiconductor layer in the semiconductor stacked unit 20 but also in the n-type semiconductor layer. For example, in the semiconductor stacked unit 20, from the contact layer 26 to the lower part. It is formed to a depth reaching the clad layer 21.
  • Each fourth region R4 is an impurity region containing p-type impurities.
  • the p-type impurity contained in each fourth region R4 is, for example, Zn.
  • the p-type impurity concentration in each of the fourth regions R4 is higher than the p-type impurity concentration in the first region R1, for example, 1.0 ⁇ 10 17 cm ⁇ 3 or more and 2.0 ⁇ 10 19 cm ⁇ 3 or less. The value is within the range.
  • Each fourth region R4 may be in contact with the end of each second region R2, for example, as shown in FIG.
  • the resonator end faces S1 and S2 are faces where crystals are discontinuously discontinued. Therefore, many dangling bonds are formed on the resonator end faces S1 and S2. Dangling bonds act as non-radiative recombination centers. Therefore, the carriers (electron-hole pairs) injected from the upper electrode layer 31 and the lower electrode layer 33 are recombined at these non-radiative recombination centers, and the energy generated at this time is converted into heat. Further, in the non-radiative recombination center, the effective energy band gap is smaller than the central portion between the resonator end faces S1 and S2.
  • the light (recombination light) that reciprocates between the resonator end faces S1 and S2 is easily absorbed by the non-radiative recombination center.
  • the energy of the absorbed light causes carriers to generate heat due to recombination at the non-radiative recombination center.
  • COD catastrophic optical damage
  • the window structures 10A and 10B are formed by providing the fourth region R4 near the cavity end faces S1 and S2. That is, the fourth region R4 is an impurity region provided to form the window structure near the resonator end faces S1 and S2. Therefore, the fourth region R4 has the same configuration as the above-mentioned second region R2, but is different from the above-mentioned second region R2 in terms of formation purpose.
  • FIG. 10A shows an example of a sectional configuration of a wafer in the process of manufacturing the semiconductor laser 1.
  • FIG. 10B shows an example of a cross-sectional structure of the wafer in the manufacturing process subsequent to FIG. 10A.
  • FIG. 10C shows an example of a cross-sectional configuration of the wafer in the manufacturing process subsequent to FIG. 10B.
  • FIG. 10D shows an example of a cross-sectional configuration of the wafer in the manufacturing process subsequent to FIG. 10C.
  • FIG. 10E illustrates an example of a cross-sectional configuration of the wafer in the manufacturing process subsequent to FIG. 10D.
  • FIG. 10F shows an example of a cross-sectional configuration of the wafer in the manufacturing process subsequent to FIG. 10E.
  • FIG. 10G shows an example of a cross-sectional configuration of the wafer in the manufacturing process subsequent to FIG. 10F.
  • FIG. 10H shows an example of a cross-sectional configuration of the wafer in the manufacturing process subsequent to FIG. 10G.
  • FIG. 10I shows an example of a cross-sectional configuration of a wafer in the manufacturing process subsequent to FIG. 10H.
  • 10J illustrates an example of a cross-sectional configuration of a wafer in the manufacturing process subsequent to FIG. 10I. Note that in FIGS. 10A to 10I, both side surfaces correspond to locations where cleavage is to be performed on the wafer.
  • an epitaxial crystal such as a MOCVD (Metal Organic Chemical Vapor Deposition) method is used to form a compound semiconductor on a substrate 10 made of n-type GaAs doped with Si. It is formed collectively by a growth method.
  • a methyl-based organometallic gas such as trimethylaluminum (TMAl), trimethylgallium (TMGa), trimethylindium (TMIn), arsine (AsH 3 ) is used as TMAl), trimethylgallium (TMGa), trimethylindium (TMIn), arsine (AsH 3 ) is used.
  • the substrate 10 put the substrate 10 (wafer) in the MOCVD furnace.
  • the lower clad layer 21, the lower guide layer 22, the active layer 23, the upper guide layer 24, the upper clad layer 25, and the contact layer 26 are formed in this order on the substrate 10 (FIG. 10A).
  • the substrate 10 (wafer) is taken out from the MOCVD furnace.
  • a resist layer 110 having an opening 110A at a predetermined position is formed (FIG. 10B).
  • Zn is diffused through the opening 110A to a depth reaching the lower guide layer 22 from the contact layer 26.
  • the first region R1 is formed (FIG. 10C).
  • the resist layer 110 is removed.
  • a resist layer 120 having an opening 120A at a predetermined position is formed (FIG. 10D). Subsequently, Zn is diffused through the opening 120A to a depth reaching the lower cladding layer 21 from the contact layer 26. As a result, the second region R2 is formed (FIG. 10E). At this time, the fourth region R4 may also be formed together. Then, the resist layer 120 is removed (FIG. 10F).
  • a solid phase diffusion method using a ZnO film, a vapor phase diffusion method, or the like can be used.
  • a ZnO film is formed at a portion exposed in the opening 110A or the opening 120A, solid phase diffusion is performed, and then the ZnO film is peeled off. Cover the entire surface of.
  • Zn is diffused from the surface layer of the contact layer 26 to a deep portion, and the Zn concentration can be controlled to a desired concentration.
  • a hard mask 130 having a predetermined pattern is formed on the surface of the contact layer 26 by using, for example, the CVD method (FIG. 10G).
  • the hard mask 130 is, for example, a SiO 2 film.
  • the contact layer 26 and the upper cladding layer 25 are selectively etched using the hard mask 130 as a mask, for example, using a dry etching method.
  • the ridge portion 20A is formed immediately below the hard mask 130, and the semiconductor laminated portion 20 including the ridge portion 20A is formed (FIG. 10H).
  • the hard mask 130 is removed (FIG. 10I).
  • the insulating layer 32 having the opening 32A is formed on the upper surface of the ridge portion 20A by using, for example, the CVD method or the sputtering method (FIG. 10J).
  • the upper electrode layer 31 is formed in the opening 32A using, for example, a vapor deposition method.
  • the lower electrode layer 33 is formed on the back surface of the substrate 10 (wafer) by using, for example, a vapor deposition method.
  • the substrate 10 (wafer) is cleaved to form the resonator end faces S1 and S2.
  • the end faces S3 and S4 are formed by cutting the substrate 10 (wafer) by dicing.
  • an antireflection film is formed on the resonator end surface S1 and a multilayer reflection film is formed on the resonator end surface S2. In this way, the semiconductor laser 1 is manufactured.
  • each second region R2 functions as a high resistance region in the semiconductor stacked unit 20.
  • the current path of the semiconductor laser 1 is narrower than that of the semiconductor laser 200 by the amount of each second region R2.
  • the threshold current of the semiconductor laser 1 can be made lower than that of the semiconductor laser 200. Further, since the amount of current (current leakage amount) flowing on both sides of the ridge portion 20A is significantly reduced, the efficiency is improved and unnecessary heat generation is suppressed, so that the defect growth rate in the active layer 23 is reduced. , Good reliability is obtained.
  • each second region R2 is formed including the end faces S3, S4.
  • the dark current in the end surfaces S3 and S4 can also be reduced by the respective second regions R2.
  • the threshold current of the semiconductor laser 1 can be further reduced.
  • each second region R2 is provided from a position corresponding to the ridge of the ridge 20A (the surface of the upper cladding layer 25) to a position deeper than the active layer 23.
  • each of the second regions R2 can be formed by, for example, Zn diffusion, it is possible to reduce damage to the semiconductor stacked unit 20 due to the formation of each of the second regions R2. As a result, it is possible to reduce the amount of current leakage caused by the damage formed in the semiconductor stacked unit 20.
  • the active layer 23 is provided in the p-type semiconductor layer. Accordingly, for example, as compared with the case where the active layer 23 is provided between the p-type semiconductor layer and the n-type semiconductor layer, the pn formed at the interface between each second region R2 and the lower clad layer 21. The distance between the junction and the active layer 23 can be increased. The larger this distance, the lower the possibility of recombination on both sides of the ridge portion 20A, and the significantly smaller amount of current (current leakage amount) flowing on both sides of the ridge portion 20A. it can.
  • the window structures 10A and 10B are formed by the impurity region (third region R3) having a p-type impurity concentration higher than the p-type impurity concentration in the region (first region R1) facing the ridge portion 20A. Has been formed. As a result, not only the amount of current flowing on both sides of the ridge portion 20A (current leakage amount) but also the amount of current flowing on the resonator end faces S1 and S2 (current leakage amount) can be reduced. As a result, the threshold current of the semiconductor laser 1 can be lowered. Further, the window structures 10A and 10B can prevent the generation of COD and improve the reliability of the element.
  • each second region R2 is Zn and the p-type impurity of each third region R3 is also Zn, so that each second region R2 and each third region R3 are Can be collectively formed by Zn diffusion. In this case, it is possible to suppress an increase in takt time and manufacturing cost.
  • FIG. 11 shows a modification of the sectional configuration of the semiconductor laser 1 of FIG.
  • FIG. 12 shows a modification of the cross-sectional structure of the semiconductor laser 1 of FIG.
  • the semiconductor laminated portion 20 is located on both sides of the ridge portion 20A and between the ridge portion 20A and a portion facing the second region R2 in the laminating direction (that is, the third region R3).
  • each may have a band-shaped groove 35 having a depth that does not reach the active layer 23.
  • the semiconductor laminated portion 20 has the base portion 34 between the groove portion 35 and the end surfaces S3 and S4.
  • the base portion 34 corresponds to a portion left unetched when the ridge portion 20A is formed by forming two groove portions 35 that are parallel to each other by using etching in the manufacturing process. Therefore, the base portion 34 includes, in addition to the upper cladding layer 25, the contact layer 26 having higher conductivity than the upper cladding layer 25.
  • the height of the base portion 34 is substantially equal to the height of the ridge portion 20A. Therefore, by providing the base portion 34, concentration of external force or stress on the ridge portion 20A can be avoided. Therefore, the durability of the semiconductor laser 1 can be improved.
  • the base portion 34 includes, in addition to the upper cladding layer 25, the contact layer 26 having higher conductivity than the upper cladding layer 25. Therefore, the amount of current flowing through the contact layer 26 and the upper clad layer 25 on both sides of the ridge portion 20A (current leakage amount) may increase.
  • the second regions R2 are formed on both sides of the ridge 20A (that is, the regions facing the base portion 34). Therefore, although the base portion 34 is provided, the current leakage on both sides of the ridge portion 20A is suppressed by the second region R2. As a result, the threshold current of the semiconductor laser 1 can be lowered.
  • the amount of current (current leakage amount) flowing on both sides of the ridge portion 20A is significantly reduced, the efficiency is improved and unnecessary heat generation is suppressed, so that the defect growth rate in the active layer 23 is reduced. , Good reliability is obtained.
  • FIG. 13 shows a modification of the sectional configuration of the semiconductor laser 1 of FIG.
  • FIG. 14 shows a modification of the cross-sectional structure of the semiconductor laser 1 of FIG.
  • each second region R2 may be provided only between the active layer 23 and the substrate 10. At this time, each second region R2 is preferably provided in contact with the active layer 23.
  • Each second region R2 can be formed, for example, by implanting Zn to a desired depth of the semiconductor stacked unit 20 using an ion implantation method. Even when each second region R2 is provided only between the active layer 23 and the substrate 10, the same effects as those of the above-described embodiment and its modification A can be obtained.
  • FIG. 15 shows a modification of the cross-sectional structure of the semiconductor laser 1 of FIG.
  • FIG. 16 shows a modification of the sectional configuration of the semiconductor laser 1 of FIG.
  • the first region R1 may be provided only in the p-type semiconductor layer.
  • the first region R1 may be formed only in the portion of the upper cladding layer 25 and the contact layer 26 that faces the ridge portion 20A. Even in this case, the same effect as that of the above-described embodiment and its modification A can be obtained.
  • FIG. 17 shows a modification of the sectional configuration of the semiconductor laser 1 of FIG.
  • FIG. 18 shows a modification of the sectional configuration of the semiconductor laser 1 of FIG.
  • each second region R2 may be formed only in the p-type semiconductor layer in the semiconductor stacked unit 20.
  • each second region R2 is formed in the semiconductor laminated portion 20 to a depth reaching from the contact layer 26 or the upper cladding layer 25 to the lower guide layer 22. Good. Even in this case, the same effect as that of the above-described embodiment and its modification A can be obtained.
  • FIG. 19 shows a modification of the sectional configuration of the semiconductor laser 1 of FIG.
  • FIG. 20 shows a modification of the sectional configuration of the semiconductor laser 1 of FIG.
  • the first region R1 may be omitted in the above embodiment and the modifications A to D thereof. Even in this case, the same effect as that of the above-described embodiment and its modification A can be obtained.
  • Modification F The conductivity types may be reversed in the above-described embodiment and the modifications A to E thereof.
  • the p-type may be the n-type and the n-type may be the p-type. Even in this case, it is possible to obtain the same effects as those of the above-described embodiment and the modifications A to E thereof.
  • the semiconductor material forming the semiconductor laminated portion 20 includes, for example, nitrogen (N), boron (B), antimony (Sb), and phosphorus (P). It may be a group V semiconductor.
  • a resin layer filling the ridge portion 20A may be provided instead of the insulating layer 32.
  • the insulating layer 32 may be omitted in the above-described embodiment and the modifications A to G thereof.
  • the second region R2 may be provided in at least a part of the region not facing the ridge portion 20A. Further, in the above-described embodiment and its modifications AH, the second region R2 may include at least a part of the end faces S3, S4. Even in such a case, the current amount (current leakage amount) flowing on both sides of the ridge portion 20A is reduced as compared with the general semiconductor laser 200 in which the second region R2 is not provided. As a result, the threshold current of the semiconductor laser 1 can be made lower than that of the semiconductor laser 200. Further, since the amount of current (current leakage amount) flowing on both sides of the ridge portion 20A decreases, wasteful heat generation is suppressed by improving efficiency, and the defect growth rate in the active layer 23 decreases, which is favorable. Reliable.
  • FIG. 19 illustrates an example of a schematic configuration of the distance measuring device 2.
  • the distance measuring device 2 measures the distance to the subject 300 by the TOF (Time Of Flight) method.
  • the distance measuring device 2 includes the semiconductor laser 1 as a light source.
  • the distance measuring device 2 includes, for example, the semiconductor laser 1, the light receiving unit 41, the lenses 42 and 43, the laser driver 44, the amplifying unit 45, the measuring unit 46, the control unit 47, and the calculating unit 48.
  • the light receiving unit 41 detects the light reflected by the subject 300.
  • the light receiving section 41 is composed of, for example, a photo detector.
  • the light receiving unit 41 may be configured by an avalanche photodiode (APD), a single photon avalanche diode (SPAD), a multi-pixel single photon avalanche diode (MP-SPAD), or the like.
  • the lens 42 is a lens for collimating the light emitted from the semiconductor laser 1 and is a collimating lens.
  • the lens 43 is a lens for condensing the light reflected by the subject 300 and guiding it to the light receiving unit 41, and is a condensing lens.
  • the laser driver 44 is, for example, a driver circuit for driving the semiconductor laser 1.
  • the amplifier 45 is, for example, an amplifier circuit for amplifying the detection signal output from the light receiver 41.
  • the measurement unit 46 is, for example, a circuit for generating a signal corresponding to the difference between the signal input from the amplification unit 45 and the reference signal.
  • the measuring unit 46 is composed of, for example, a Time to Digital Converter (TDC).
  • TDC Time to Digital Converter
  • the reference signal may be a signal input from the control unit 47 or may be an output signal of a detection unit that directly detects the output of the semiconductor laser 1.
  • the control unit 47 is, for example, a processor that controls the light receiving unit 41, the laser driver 44, the amplification unit 45, and the measurement unit 46.
  • the calculation unit 48 is a circuit that derives distance information based on the signal generated by the measurement unit 46.
  • the semiconductor laser 1 is used as the light source in the distance measuring device 2. With this, it is possible to emit a high-power laser beam, so that it is possible to improve the detection accuracy.
  • FIG. 20 shows an example of a schematic configuration of the projector 3.
  • the projector 3 is a device that projects an image based on the image signal Din input from the outside onto a screen or the like.
  • the projector 3 includes a video signal processing circuit 51, a laser drive circuit 52, a light source section 53, a scanner section 54, and a scanner drive circuit 55.
  • the video signal processing circuit 51 generates a projection video signal for each color based on the video signal Din.
  • the laser drive circuit 52 controls the peak value of the current pulse applied to the light sources 53R, 53G, 53B, which will be described later, based on the projection video signal for each color.
  • the light source unit 53 has a plurality of light sources, for example, three light sources 53R, 53G, 53B.
  • the three light sources 53R, 53G, and 53B are used as laser light sources that emit laser light having wavelengths of red (R), green (G), and blue (B), for example.
  • At least one of the light sources 53B and 53G is configured to include the semiconductor laser 1 according to the first embodiment and its modification.
  • the laser beams emitted from the three light sources 53R, 53G, 53B are collimated by a collimator lens, for example, and then collimated into a single laser beam by the beam splitters 53sR, 53sG, 53sB.
  • the beam splitter 53sR reflects, for example, red light.
  • the beam splitter 53sG reflects, for example, green light and transmits red light.
  • the beam splitter 53sB reflects, for example, blue light and transmits red light and green light.
  • the scanner unit 54 is configured by using, for example, one biaxial scanner.
  • the incident laser light is projected on the screen after the irradiation angle is modulated in the horizontal and vertical directions by the biaxial scanner.
  • the scanner unit 54 may be configured to scan in the horizontal direction and the vertical direction by using two uniaxial scanners.
  • the scanner unit 54 has a sensor such as a two-axis scanner that detects the irradiation angle, and the sensor outputs horizontal and vertical angle signals. These angle signals are input to the scanner drive circuit 55.
  • the scanner drive circuit 55 drives the scanner unit 54 so as to have a desired irradiation angle based on, for example, the horizontal angle signal and the vertical angle signal input from the scanner unit 54.
  • the semiconductor laser 1 according to the first embodiment and its modification is used in at least one of the light sources 53B and 53G. This makes it possible to obtain high emission intensity with low power consumption.
  • a semiconductor laminated portion including a first conductive type first semiconductor layer, a second conductive type second semiconductor layer laminated on the first semiconductor layer and provided with a band-shaped ridge portion, and an active layer.
  • the semiconductor laminated portion is at least a part of a region that does not face the ridge portion, and is located at a position deeper than at least the active layer, and the impurity concentration of the second conductivity type is the second semiconductor layer.
  • the semiconductor laminated portion has an end surface on each side of the ridge portion,
  • the first impurity region is provided from a portion of the surface of the second semiconductor layer corresponding to the ridge of the ridge portion to a position deeper than the active layer (1) or (2).
  • the second semiconductor layer is at least a part of a region that does not face the ridge portion, and is formed on the active layer between the ridge portion and a portion that faces the first impurity region in the stacking direction.
  • the first conductivity type is n-type
  • the second conductivity type is p-type
  • the second conductivity type impurity included in a region of the second semiconductor layer facing the ridge portion is C
  • the semiconductor laser of any one of (1) to (5), wherein the impurity of the second conductivity type contained in the first impurity region is Zn.
  • the bottom surface of the first impurity region is a pn junction formed by the first impurity region and the first semiconductor layer,
  • the semiconductor laser according to any one of (1) to (7), wherein a distance between the bottom surface of the first impurity region and the active layer is 0.3 ⁇ m or more.
  • the semiconductor laminated portion further has a resonator end face and a window structure including the resonator end face at both ends of the ridge portion, respectively.
  • the window structure is composed of a second impurity region having an impurity concentration of the second conductivity type higher than an impurity concentration of the second conductivity type in a region of the second semiconductor layer facing the ridge portion.
  • the semiconductor laser as described in any one of 1) to (9). (11) The semiconductor laser according to (10), wherein the second conductivity type impurity contained in the second impurity region is Zn. (12) Equipped with a semiconductor laser as a light source, The semiconductor laser includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type laminated on the first semiconductor layer and provided with a strip-shaped ridge portion, and an active layer.
  • the semiconductor laminated portion is at least a part of a region that does not face the ridge portion, and is located at a position deeper than at least the active layer.
  • An electronic device having an impurity region having a higher impurity concentration than the second conductivity type in a region facing the ridge portion.
  • the transport of electrons or holes to the active layer is blocked in at least a part of the region not facing the ridge portion. It is possible to suppress current leakage to both sides of the ridge portion. As a result, a good threshold current can be obtained. Note that the effects of the present disclosure are not necessarily limited to the effects described here, and may be any effects described in the present specification.

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  • Semiconductor Lasers (AREA)
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WO2014126164A1 (ja) * 2013-02-13 2014-08-21 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法

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CN103199437B (zh) * 2009-07-06 2015-07-22 古河电气工业株式会社 半导体光学器件的制造方法、半导体光学激光元件的制造方法以及半导体光学器件

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JP2005175450A (ja) * 2003-11-21 2005-06-30 Sharp Corp 化合物半導体装置およびその製造方法、ならびにその化合物半導体装置を備えた光ディスク装置
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