WO2020093487A1 - 显示面板、制作方法和显示装置 - Google Patents

显示面板、制作方法和显示装置 Download PDF

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Publication number
WO2020093487A1
WO2020093487A1 PCT/CN2018/118157 CN2018118157W WO2020093487A1 WO 2020093487 A1 WO2020093487 A1 WO 2020093487A1 CN 2018118157 W CN2018118157 W CN 2018118157W WO 2020093487 A1 WO2020093487 A1 WO 2020093487A1
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area
metal layer
region
height
horizontal
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PCT/CN2018/118157
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English (en)
French (fr)
Inventor
杨春辉
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惠科股份有限公司
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Priority to US16/342,205 priority Critical patent/US11495622B2/en
Publication of WO2020093487A1 publication Critical patent/WO2020093487A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

Definitions

  • the present application relates to the field of display technology, in particular to a display panel, a manufacturing method and a display device.
  • the thin-film transistor liquid crystal display (Thin Film Transistor-Liquid Crystal) (TFT-LCD) array manufacturing project completes the pixel array including the thin film transistor by preparing each layer of thin film patterns on the glass substrate, which realizes the crystal electrical drive Key project.
  • TFT-LCD Thin Film Transistor-Liquid Crystal
  • a first layer metal process a semiconductor process
  • a second layer metal process a passivation layer process
  • a transparent electrode layer process In the preparation of each layer of the array substrate film, functionally, it can be divided into a conductive film and a functional film, wherein the conductive film includes a metal film and transparent indium tin oxide.
  • the inventor knows that magnetron sputtering is used to deposit a metal thin film, and the metal thin film forms various patterns of metal layers after exposure, development, and etching.
  • Part of the pattern of the second metal process (M2) will overlap with part of the pattern of the first metal process (M1).
  • the M2 process will have a climbing process from the pattern that does not overlap with the M1 process to the overlapping pattern.
  • the position of the slope affects the stability of the route.
  • the application provides a display panel with uniform display effect, a manufacturing method and a display device.
  • the present application discloses a display panel including a first substrate, the first substrate including: a substrate, a first metal layer formed on the substrate, a second metal layer and An insulating layer is provided between the first metal layer and the second metal layer, the first metal layer and the second metal layer are insulated; wherein, the second metal layer includes a horizontal region and an inclined region, so The inclined area is inclined from a first height to a second height, the first height is higher than the second height, the thickness of the horizontal area of the second metal layer is greater than the thickness of the inclined area of the second metal layer, the The width of the inclined region of the second metal layer is greater than the width of the horizontal region of the second metal layer.
  • the angle between the inclined region of the second metal layer and the plane where the substrate is located is ⁇ 1
  • the angle between the second metal layer of the inclined region and the plane of the substrate is ⁇ 1
  • the angle between the first metal layer and the plane of the substrate is ⁇ 2, where ⁇ 1 ⁇ ⁇ 2.
  • the width of the second metal layer in the inclined region is d6, and the width of the second metal layer in the horizontal region is d5, where,
  • the horizontal region of the second metal layer includes a first region, a second region, and a top horizontal region
  • the top horizontal region is the same height as the first height
  • the first region, the second region, and the second The height is equal
  • the thicknesses of the second metal layers in the first region, the second region, and the third region are equal.
  • the thickness of the inclined region of the second metal layer is d3, the thickness of the horizontal region of the second metal layer is d2, and the length of the second metal layer is L, where, d2> d3, V is the volume of the second metal layer in the vertical direction per unit time when the second metal layer is formed.
  • the inclined region of the second metal layer includes a first inclined region and a second inclined region
  • the horizontal region of the second metal layer includes a top horizontal region
  • the top horizontal region and the first metal layer Corresponds to the position, the first inclined area is located on one side of the top horizontal area, the second inclined area is located on the other side of the top horizontal area, and the width of the first inclined area is greater than the second The width of the horizontal region of the metal layer, the width of the second inclined region is greater than the width of the horizontal region of the second metal layer.
  • the horizontal region of the second metal layer includes a first region, a second region, and a top horizontal region, the top horizontal region is the same height as the first height, and the first region, the second region, and the second The height is equal, the first area includes a first adjacent area and a first wiring area, the first adjacent area is connected to the first inclined area, and the first wiring area is away from the first inclined area The widths of the first adjacent area and the first inclined area are equal and larger than the width of the first trace area.
  • the horizontal region of the second metal layer includes a first region, a second region, and a top horizontal region
  • the top horizontal region is the same height as the first height
  • the first region, the second region, and the second The height is the same height
  • the top horizontal area includes a second adjacent area and an intermediate area
  • the second adjacent area is connected to the first inclined area
  • the intermediate area is far from the first inclined area
  • the second adjacent The width of the area and the first inclined area are equal and larger than the width of the middle area.
  • the horizontal region of the second metal layer includes a first region, a second region, and a top horizontal region, the top horizontal region is the same height as the first height, and the first region, the second region, and the second The height is equal, the second area includes a third adjacent area and a second wiring area, the third adjacent area is connected to the second inclined area, and the second wiring area is away from the second inclined area The widths of the third adjacent area and the second inclined area are equal and larger than the width of the second trace area.
  • the horizontal region of the second metal layer includes a first region, a second region, and a top horizontal region
  • the top horizontal region is the same height as the first height
  • the first region, the second region, and the second The height is the same height
  • the top horizontal area includes a fourth adjacent area and an intermediate area
  • the fourth adjacent area is connected to the second inclined area
  • the intermediate area is far from the second inclined area
  • the fourth adjacent The width of the area and the second inclined area are equal and larger than the width of the middle area.
  • the application also discloses a method for manufacturing a display panel, including:
  • the step of forming the first substrate includes:
  • a second metal layer is formed on the insulating layer, the second metal layer includes steps of a horizontal region and an inclined region, wherein the width of the inclined region of the second metal layer is d6, and the second metal The width of the horizontal area of the layer is d5,
  • the present application also discloses a display device including the above-mentioned display panel.
  • the thickness of the second metal layer in the horizontal region is greater than the thickness of the second metal layer in the inclined region, so that the resistance of the inclined region is greater than the resistance of the horizontal region, and the width of the second metal layer provided in the inclined region is greater than the horizontal region
  • the width of the second metal layer of the second metal layer is further increased, and the area of the second metal layer in the inclined region of the first metal layer is larger. The larger the thickness is, the smaller the width is.
  • the cross-sectional areas of the two are equal or close to equal.
  • the resistance of the horizontal area and the vertical area is finally equal or close to equal, thereby keeping the line resistance uniformly stable, so that the display The display effect of the panel is more uniform.
  • FIG. 1 is a schematic diagram of a top view of a first metal layer and a second metal layer according to an embodiment of the present application
  • Fig. 2 is a schematic diagram of the cross-sectional view of Fig. 1 along the F-F 'direction;
  • FIG. 3 is a schematic diagram of a cross-sectional view of a display panel according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a top view of a display panel according to an embodiment of the present application.
  • Fig. 5 is a schematic view of the cross-sectional view of Fig. 4 along the A-A 'direction;
  • FIG. 6 is a schematic view of the cross-sectional view of FIG. 4 along the B-B 'direction;
  • FIG. 7 is a schematic view of the cross-sectional view of FIG. 4 along the C-C 'direction;
  • FIG. 8 is a schematic view of the cross-sectional view of FIG. 4 along the D-D 'direction;
  • FIG. 9 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present application.
  • FIG. 10 is a schematic diagram of a block diagram of a display device according to an embodiment of the present application.
  • first and second are used only for descriptive purposes and cannot be understood as indicating relative importance, or implicitly indicating the number of indicated technical features.
  • the features defined as “first” and “second” may expressly or implicitly include one or more of the features; “multiple” means two or more.
  • the term “comprising” and any variations thereof are meant to be non-exclusive and one or more other features, integers, steps, operations, units, components, and / or combinations thereof may be present or added.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection It can also be an electrical connection; it can be directly connected, indirectly connected through an intermediary, or connected within two components.
  • the thin-film transistor liquid crystal display (Thin Film Transistor-Liquid Crystal) (TFT-LCD) array manufacturing project completes the pixel array including the thin film transistor by preparing each layer of thin film patterns on the glass substrate, which realizes the crystal electrical drive Key project.
  • TFT-LCD Thin Film Transistor-Liquid Crystal
  • first layer metal process abbreviated as M1 process
  • AS process semiconductor process
  • second layer metal process abbreviated as M2 process
  • passivation Layer process referred to as PV process
  • ITO process transparent electrode layer process
  • the M1 process forms scan line related patterns
  • the AS process forms TFT channel patterns
  • the M2 process forms data line related patterns
  • the PV process forms contact hole patterns
  • the ITO process forms pixel electrode patterns.
  • the conductive film includes a metal film and transparent indium tin oxide (Indium Tin Oxide (ITO). After exposure, development and etching, the metal thin film forms various patterns of metal layers.
  • ITO Indium Tin Oxide
  • magnetron sputtering is used to deposit the metal thin film. Magnetron sputtering is based on two-level DC sputtering, adding a magnetic field near the back of the target. The sputtering process from the target to the substrate surface can be regarded as a straight forward process.
  • the M1 process is a first metal layer process
  • the M2 process is a second metal layer process.
  • Part of the pattern of M2 process will overlap with part of the pattern of M1 process.
  • M2 process will have a climbing process from the non-overlapping pattern to the overlapping pattern of M1 process, as shown in Figure 1 and Figure 2. It can be seen in Figure 1 that the thickness of the film pattern in the climbing area is thinner than the film thickness in the non-climbing area, this is because the sputtering volume flow of the M2 process coating in the vertical direction during the magnetron sputtering of the M2 process Is Q, where d1 is the thickness of the first metal layer, and the horizontal effective coating area of the climbing area is smaller than the climbing area. If M2 keeps climbing with the same line width, its resistance value becomes larger at the climbing position, which has a great influence on maintaining uniform stability of the line resistance value, especially on the data line.
  • d2 is the thickness of the horizontal region of the second metal layer
  • d3 is the thickness of the inclined region of the second metal layer
  • d4 is the first inclined region
  • d7 is the first adjacent region
  • d8 is the second adjacent region
  • d14 is the third In the adjacent area
  • d12 is the second inclined area
  • d13 is the fourth adjacent area.
  • an embodiment of the present application discloses a display panel 110 including a first substrate 111.
  • the first substrate 111 includes: a substrate 112, formed on the substrate
  • the first metal layer 113, the second metal layer 115, and the insulating layer 114 on the bottom 112 are disposed between the first metal layer 113 and the second metal layer 115, and the first metal layer 113 and the second
  • the metal layer 115 is insulated; wherein, the second metal layer 115 includes a horizontal region 116 and an inclined region 117, the inclined region 117 is inclined from the first height 130 to the second height 131, the first height 130 is higher than the second Height 131, the thickness of the horizontal region 116 of the second metal layer 115 is greater than the thickness of the inclined region 117 of the second metal layer 115, and the width of the inclined region 117 of the second metal layer 115 is greater than that of the second metal The width of the horizontal region 116 of the layer 115.
  • the thickness of the horizontal region 116 of the second metal layer 115 is greater than the thickness of the inclined region 117 of the second metal layer 115, so that the resistance of the inclined region 117 is greater than the resistance of the horizontal region 116.
  • the width of the inclined region 117 is larger than the width of the horizontal region 116 of the second metal layer 115, thereby increasing the area of the second metal layer 115 in the inclined region of the first metal layer 113.
  • a larger thickness corresponds to a smaller width, and the two complement each other. Inclined regions with small thickness increase the width, so that the cross-sectional area of the two is equal or close to equal.
  • the resistance of the horizontal region 116 and the vertical region is finally equal or close to equal In order to maintain uniform and stable line resistance, the display effect of the display panel 110 is more uniform.
  • the angle between the second metal layer 115 of the inclined region and the plane where the substrate 112 is located is ⁇ 1
  • the angle between the first metal layer 113 and the plane where the substrate 112 is located is ⁇ 2
  • ⁇ 1 ⁇ 2
  • the line width of the second metal layer 115 in the inclined area is parallel, and the overall thickness is uniform.
  • the angle between the two may not be equal, and ⁇ 1 ⁇ ⁇ 2 is also possible.
  • the setting of the angle is not limited, as long as the line resistance of the inclined area and the horizontal area 116 can be kept uniform and stable.
  • the width of the second metal layer 115 of the inclined region is d6, and the width of the second metal layer 115 of the horizontal region 116 is d5, where the formula is satisfied,
  • the width of the second metal layer 115 in the inclined region is d6, and the width of the second metal layer 115 in the horizontal region 116 is d5.
  • the relationship between d5 and d6 satisfies: d5 is greater than d6, without changing the thickness, increasing the width of the inclined region of the second metal layer 115 makes the area of the inclined region of the second metal layer 115 increase, so that the resistance value per unit length of the inclined region The resistance value per unit length of the horizontal area 116 is the same, thereby changing the resistance value of the inclined area, maintaining the uniform stability of the line resistance value, and making the display effect of the display panel 110 more uniform.
  • the horizontal region 116 of the second metal layer 115 includes a first region 120, a second region 126, and a top horizontal region 123.
  • the top horizontal region 123 is the same height as the first height 130.
  • the first region 120 and the second region 126 have the same height as the second height 131, and the first metal layer 120, the second region 126, and the third region have the same thickness of the second metal layer 115.
  • the horizontal region 116 of the second metal layer 115 includes a first region 120, a second region 126, and a top horizontal region 123.
  • the thicknesses of the first region 120, the second region 126, and the top horizontal region 123 are all equal In this way, the uniformity of the film thickness of the second metal layer 115 in the horizontal direction is ensured, so that the resistance of the circuit is uniform and stable, and the display effect of the display panel 110 is more uniform.
  • the thickness of the second metal layer 115 of the inclined region is d3, the thickness of the second metal layer 115 of the horizontal region 116 is d2, and the length of the second metal layer 115 in the horizontal direction is L, where, d2> d3, V is the volume of the second metal layer 115 in the vertical direction per unit time when the second metal layer 115 is formed.
  • the inclined region of the second metal layer 115 includes a first inclined region 118 and a second inclined region 119
  • the horizontal region 116 of the second metal layer 115 includes a top horizontal region 123
  • the area 123 corresponds to the position of the first metal layer 113
  • the first inclined area 118 is located on one side of the top horizontal area 123
  • the second inclined area 119 is located on the other side of the top horizontal area 123
  • the width of the first inclined region 118 is greater than the width of the horizontal region of the second metal layer
  • the width of the second inclined region 119 is greater than the width of the horizontal region of the second metal layer.
  • the widths of the first inclined region 118 and the second inclined region 119 are widened. Compared to the width of the inclined region on only one side, the inclined regions on both sides are widened, making the overall circuit uniform and stable The performance is better, so that the display effect of the display panel 110 is more uniform.
  • the included angle between the first inclined region 118 and the second inclined region 119 may be equal or different. When they are equal, the resistance values of the first inclined region 118 and the second inclined region 119 are equal, so that the whole second metal The resistance values of the layers 115 are consistent; when they are not equal, the resistance values are adjusted by adjusting different widths, so that the display effect of the display panel 110 is more uniform.
  • the horizontal region 116 of the second metal layer 115 includes a first region 120, a second region 126 and a top horizontal region 123.
  • the top horizontal region 123 and the first A height 130 is the same height
  • the first area 120 and the second area 126 are the same height as the second height 131
  • the first area 120 includes a first abutting area 121 and a first trace area 122
  • the first abutting The area 121 is connected to the first inclined area 118
  • the first trace area 122 is away from the first inclined area 118
  • the width of the first abutting area 121 and the first inclined area 118 is equal to and greater than the first The width of a trace area 122.
  • the widths of the first abutting area 121 and the first inclined area 118 are widened, so that the accuracy requirements of the process are reduced, the resistance value is increased, and the impact on the panel is not great.
  • the horizontal region 116 of the second metal layer 115 includes a first region 120, a second region 126, and a top horizontal region 123.
  • the top horizontal region 123 is the same height as the first height 130.
  • An area 120 and a second area 126 are the same height as the second height 131, the top horizontal area 123 includes a second adjacent area 124 and an intermediate area 125, the second adjacent area 124 is connected to the first inclined area 118,
  • the middle region 125 is far away from the first inclined region 118, and the widths of the second abutting region 124 and the first inclined region 118 are equal and larger than the width of the middle region 125.
  • the horizontal region 116 of the second metal layer 115 includes a first region 120, a second region 126, and a top horizontal region 123.
  • the top horizontal region 123 is the same height as the first height 130.
  • An area 120 and a second area 126 are the same height as the second height 131, the second area 126 includes a third adjacent area 127 and a second trace area 128, the third adjacent area 127 and the second inclined area 119 is connected, the second trace area 128 is far away from the second inclined area 119, and the width of the third adjacent area 127 and the second inclined area 119 are equal and greater than the width of the second trace area 128.
  • the horizontal region 116 of the second metal layer 115 includes a first region 120, a second region 126, and a top horizontal region 123.
  • the top horizontal region 123 is the same height as the first height 130.
  • An area 120 and a second area 126 are the same height as the second height 131, the top horizontal area 123 includes a fourth adjacent area 129 and an intermediate area 125, the fourth adjacent area 129 is connected to the second inclined area 119,
  • the middle region 125 is far away from the second inclined region 119, and the widths of the fourth adjacent region 129 and the second inclined region 119 are equal and larger than the width of the middle region 125. This is also possible.
  • the value range of d4 and d8 is greater than or equal to 2 microns ( ⁇ m), optionally, the value range of d4 and d8 is greater than or equal to 0 microns, less than or equal 10 ⁇ m.
  • the value range of ⁇ 1 is 5 degrees ⁇ 1 ⁇ 85 degrees, 11.474 * d6 ⁇ d5 ⁇ 1.004 * d6, and the lengths of d4, d8, d12, and d14 are shorter than the length of the first metal layer 113.
  • this application discloses an embodiment of a method for manufacturing a display panel 110, including:
  • the step S1 of forming the first substrate 111 includes:
  • S13 forming a second metal layer 115 on the insulating layer 114, the second metal layer 115 includes a horizontal region 116 and an inclined region, and the formed inclined region is inclined from the first height 130 to the second height 131, the first height 130 is higher than the second height 131, the thickness of the formed horizontal region 116 is greater than the thickness of the formed inclined region, and the width of the formed inclined region is greater than the width of the formed horizontal region 116.
  • step S1 and the step S2 are not required in sequence.
  • the thickness of the second metal layer 115 of the horizontal region 116 is greater than the thickness of the second metal layer 115 of the inclined region, so that the resistance of the inclined region is greater than the resistance of the horizontal region 116, and the second metal layer 115 of the inclined region is provided
  • the width is larger than the width of the second metal layer 115 in the horizontal region 116, thereby increasing the area of the second metal layer 115 in the inclined region of the first metal layer 113, a larger thickness corresponds to a smaller width, the two complement each other, the smaller the thickness
  • the sloped area increases the width, thereby making the cross-sectional area of the two equal or nearly equal.
  • the resistance material conductivity ⁇ and the unit length L are the same, finally the resistance of the horizontal area 116 and the vertical area is equal or close to equal, thus Keeping the line resistance value uniform and stable makes the display effect of the display panel 110 more uniform.
  • a second metal layer 115 is formed on the insulating layer 114.
  • the second metal layer 115 includes a step of a horizontal region 116 and an inclined region, wherein the width of the inclined region of the second metal layer 115 is d6, the width of the horizontal region 116 of the second metal layer 115 is d5,
  • the width of the inclined region of the second metal layer 115 is d6, and the width of the horizontal region 116 of the second metal layer 115 is d5,
  • d5 is greater than d6, without changing the thickness
  • increasing the width of the inclined region increases the area of the inclined region of the second metal layer 115, thereby changing the resistance value of the inclined region and maintaining uniform stability of the line resistance.
  • the present application also discloses a display device 100 including the above-mentioned display panel 110.
  • the present application discloses a display panel 110 including: a first substrate 111 including a substrate 112, a first metal layer 113 formed on the substrate 112, and a second A metal layer 115 and an insulating layer 114, the insulating layer 114 is disposed between the first metal layer 113 and the second metal layer 115, the first metal layer 113 and the second metal layer 115 are insulated;
  • the second metal layer 115 includes a horizontal area 116 and an inclined area, the inclined area is inclined from a first height 130 to a second height 131, the first height 130 is higher than the second height 131, the second of the horizontal area 116
  • the thickness of the metal layer 115 is greater than the thickness of the second metal layer 115 of the inclined region, and the width of the second metal layer 115 of the inclined region is greater than the width of the second metal layer 115 of the horizontal region 116.
  • the angle between the second metal layer 115 of the inclined region and the plane where the substrate 112 is located is the angle between the first metal layer 113 and the
  • the horizontal region 116 of the second metal layer 115 includes a first region 120, a second region 126, and a top horizontal region 123, the top horizontal region 123 is at the same height as the first height 130, and the first region 120 and the second
  • the area 126 is the same height as the second height 131
  • the first area 120 includes a first adjacent area 121 and a first trace area 122
  • the second area 126 includes a third adjacent area 127 and a second trace area 128,
  • the top horizontal area 123 includes a second adjacent area 124, a fourth adjacent area 129, and an intermediate area 125, the first adjacent area 121, the second adjacent area 124, the third adjacent area 127, and the fourth adjacent area 129, and
  • the widths of the first inclined area and the second inclined area are widened.
  • the thickness of the second metal layer 115 of the horizontal region 116 is greater than the thickness of the second metal layer 115 of the inclined region, so that the resistance of the inclined region is greater than the resistance of the horizontal region 116, and the second metal layer 115 of the inclined region is provided
  • the width is larger than the width of the second metal layer 115 in the horizontal region 116, thereby increasing the area of the second metal layer 115 in the inclined region of the first metal layer 113, a larger thickness corresponds to a smaller width, the two complement each other, the smaller the thickness
  • the sloped area increases the width, thereby making the cross-sectional area of the two equal or nearly equal.
  • the resistance material conductivity ⁇ and the unit length L are the same, finally the resistance of the horizontal area 116 and the vertical area is equal or close to equal, thus Keeping the line resistance value uniform and stable makes the display effect of the display panel 110 more uniform.
  • the technical solution of the present application can be widely used in various display panels, such as twisted nematic (TN) display panel, in-plane switching (IPS) display panel, vertical alignment type (Vertical Alignment, VA) ) Display panel, multi-quadrant vertical alignment (Multi-Domain Vertical Alignment, MVA) display panel, of course, it can also be other types of display panels, such as organic light-emitting diode (Organic Light-Emitting Diode, OLED) display panel, both The above scheme is applicable.
  • TN twisted nematic
  • IPS in-plane switching
  • VA Vertical Alignment
  • MVA multi-quadrant vertical alignment
  • OLED Organic Light-Emitting Diode

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Abstract

本申请公开了一种显示面板、制作方法和显示装置，显示面板包括第一基板，第一基板包括衬底、第一金属层、绝缘层以及第二金属层；其中，第二金属层包括水平区域和倾斜区域，倾斜区域从第一高度向第二高度倾斜，第一高度高于第二高度，第二金属层的水平区域的厚度大于第二金属层的倾斜区域的厚度，第二金属层的倾斜区域的宽度大于第二金属层的水平区域的宽度。

Description

显示面板、制作方法和显示装置
本申请要求于2018年11月09日提交中国专利局，申请号为CN201811332879.4，申请名称为“一种显示面板、制作方法和显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板、制作方法和显示装置。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)中的阵列制造工程通过在玻璃基板上制备各层薄膜图案，完成了包括薄膜晶体管在内的像素阵列，是实现晶体电学驱动的关键工程。以五层薄膜图案工艺为例，根据成膜的先后顺序分为：第一层金属制程、半导体制程、第二层金属制程、钝化层制程、透明电极层制程。在制备阵列基板各层薄膜中，从功能上可以分为导电薄膜和功能薄膜，其中导电薄膜包括金属薄膜和透明的氧化铟锡。发明人知晓的采用磁控溅射来进行金属薄膜的沉积，金属薄膜经过曝光显影蚀刻后形成各种图案的金属层。
第二层金属制程(M2)的部分图案会与第一层金属制程(M1)的部分图案发生重叠，M2制程从与M1制程不重叠的图案到重叠的图案会有一个爬坡的过程，爬坡的位置对线路的稳定性产生影响。
技术解决方案
本申请提供一种显示效果均匀的显示面板、制作方法和显示装置。
为实现上述目的，本申请公开了一种显示面板，所述显示面板包括第一基板，所述第一基板包括：衬底、形成在所述衬底的第一金属层、第二金属层以及绝缘层，设置在所述第一金属层和所述第二金属层之间，所述第一金属层和第二金属层绝缘；其中，所述第二金属层包括水平区域和倾斜区域，所述倾斜区域从第一高度向第二高度倾斜，所述第一高度高于第二高度，所述第二金属层的水平区域的厚度大于所述第二金属层的倾斜区域的厚度，所述第二金属层的倾斜区域的宽度大于所述第二金属层的水平区域的宽度。
可选的，所述第二金属层的倾斜区域与所述衬底所在平面的夹角为θ1，与所述第一金属层与所述衬底所在平面的夹角为θ2，其中，θ1＝θ2。
可选的，所述倾斜区域的第二金属层与所述衬底所在平面的夹角为θ1，与所述第一金属层与所述衬底所在平面的夹角为θ2，其中，θ1≠θ2。
可选的，所述倾斜区域的第二金属层的宽度为d6，所述水平区域的第二金属层的宽度为d5，其中，
Figure PCTCN2018118157-appb-000001
可选的，所述第二金属层的水平区域包括第一区域、第二区域和顶部水平区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述第一区域、第二区域和第三区域的第二金属层的厚度相等。
可选的，所述第二金属层的倾斜区域的厚度为d3，所述第二金属层的水平区域的厚度为d2，所述第二金属层的长度为L，其中，
Figure PCTCN2018118157-appb-000002
Figure PCTCN2018118157-appb-000003
d2>d3，V为形成第二金属层时单位时间第二金属层在竖直方向的体积。
可选的，所述第二金属层的倾斜区域包括第一倾斜区域和第二倾斜区域，所述第二金属层的水平区域包括顶部水平区域，所述顶部水平区域与所述第一金属层的位置对应，所述第一倾斜区域位于所述顶部水平区域的一侧，所述第二倾斜区域位于所述顶部水平区域的另一侧，所述第一倾斜区域的宽度大于所述第二金属层的水平区域的宽度，所述第二倾斜区域的宽度大于所述第二金属层的水平区域的宽度。
可选的，所述第二金属层的水平区域包括第一区域、第二区域和顶部水平区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述第一区域包括第一邻接区和第一走线区，所述第一邻接区与所述第一倾斜区域连接，所述第一走线区远离所述第一倾斜区域，所述第一邻接区和第一倾斜区域的宽度相等且大于所述第一走线区的宽度。
可选的，所述第二金属层的水平区域包括第一区域、第二区域和顶部水平区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述顶部水平区域包括第二邻接区和中间区，所述第二邻接区与所述第一倾斜区域连接，所述中间区远离所述第一倾斜区域，所述第二邻接区和第一倾斜区域的宽度相等且大于所述中间区的宽度。
可选的，所述第二金属层的水平区域包括第一区域、第二区域和顶部水平区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述第二区域包括第三邻接区和第二走线区，所述第三邻接区与所述第二倾斜区域连接，所述第二走线区远离所述第二倾斜区域，所述第三邻接区和第二倾斜区域的宽度相等且大于所述第二走线区的宽度。
可选的，所述第二金属层的水平区域包括第一区域、第二区域和顶部水平区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述顶部水平区域包括第四邻接区和中间区，所述第四邻接区与所述第二倾斜区域连接，所述中间区远离所述 第二倾斜区域，所述第四邻接区和第二倾斜区域的宽度相等且大于所述中间区的宽度。
本申请还公开了一种显示面板的制作方法，包括：
形成第一基板的步骤；其中，形成第一基板的步骤中，包括：
在衬底上形成第一金属层；在所述第一金属层上形成绝缘层；在所述绝缘层上形成第二金属层，第二金属层包括水平区域和倾斜区域，形成的倾斜区域从第一高度向第二高度倾斜，所述第一高度高于第二高度，形成的水平区域的厚度大于所述形成的倾斜区域的厚度，形成的倾斜区域的宽度大于形成的所述水平区域的宽度。
可选的，在所述绝缘层上形成第二金属层，第二金属层包括水平区域和倾斜区域的步骤，其中，所述第二金属层的倾斜区域的宽度为d6，所述第二金属层的水平区域的宽度为d5，
Figure PCTCN2018118157-appb-000004
本申请还公开了一种显示装置，包括上述的显示面板。
本方案中，水平区域的第二金属层的厚度大于所述倾斜区域的第二金属层的厚度，使得倾斜区域的电阻大于水平区域的电阻，设置倾斜区域的第二金属层的宽度大于水平区域的第二金属层的宽度，进而增大第二金属层在第一金属层倾斜区域的面积，厚度大的对应宽度小的，两者互补，将厚度小的倾斜区域增大宽度，进而使两者的截面面积相等或接近相等，在电阻材料导电率ρ和单位长度L相同的情况下，最后使得水平区域和竖直区域的电阻相等或接近相等，从而保持线路阻值的均一稳定，使得显示面板的显示效果更均匀。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请的一实施例的第一金属层和第二金属层的俯视图的示意图；
图2是图1沿F-F’方向的剖面图的示意图；
图3是本申请的一实施例的一种显示面板的剖面图的示意图；
图4是本申请的一实施例的一种显示面板的俯视图示意图；
图5是图4沿A-A’方向的剖面图的示意图；
图6是图4沿B-B’方向的剖面图的示意图；
图7是图4沿C-C’方向的剖面图的示意图；
图8是图4沿D-D’方向的剖面图的示意图；
图9是本申请一实施例的一种显示面板制作方法的流程图；
图10是本申请的一实施例的一种显示装置的框图的示意图。
具体实施方式
需要理解的是，这里所使用的术语、公开的具体结构和功能细节，仅仅是为了描述具体实施例，是代表性的，但是本申请可以通过许多替换形式来具体实现，不应被解释成仅受限于这里所阐述的实施例。
在本申请的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示相对重要性，或者隐含指明所指示的技术特征的数量。由此，除非另有说明，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征；“多个”的含义是两个或两个以上。术语“包括”及其任何变形，意为不排他的包含，可能存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
另外，“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系的术语，是基于附图所示的方位或相对位置关系描述的，仅是为了便于描述本申请的简化描述，而不是指示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，或是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
下面参考附图和可选的实施例对本申请作进一步说明。
薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)中的阵列制造工程通过在玻璃基板上制备各层薄膜图案，完成了包括薄膜晶体管在内的像素阵列，是实现晶体电学驱动的关键工程。以5层薄膜图案工艺为例，根据成膜的先后顺序分为：第一层金属制程(简称M1制程)、半导体制程(简称AS制程)、第二层金属制程(简称M2制程)、钝化层制程(简称PV制程)、透明电极层制程(简称ITO制程)。M1制程形成扫描线相关图案，AS制程形成TFT沟道图案，M2制程形成数据线相关的图案，PV制程形成接触孔(Contact Hole)图案，ITO制程形成像素电极图案。在制备阵列基板各层薄膜中，从功能上可以分为导电薄膜和功能薄膜，其中导电薄膜包括金属薄膜和透明的氧化铟锡(Indium Tin Oxide，ITO)。金属薄膜经过曝光显影蚀刻后形成各种图案的金属层。
发明人知晓的采用磁控溅射来进行金属薄膜的沉积。磁控溅射是在二级直流溅射的基础上，在靶材背面附近增加了一个磁场。从靶材到基板表面的溅射过程可以看做一个是一个直线前进的过程。
M1制程为第一金属层制程，M2制程为第二金属层制程。M2制程的部分图案会与M1制程的部分图案发生重叠，M2制程从与M1制程不重叠的图案到重叠的图案会有一个爬坡的过程，如图1和图2所示。在图1中可以看出爬坡区域的薄膜图案的厚度比不爬坡区域的薄膜厚度要薄，这是因为M2制程在磁控溅射时，M2制程镀膜在竖直方向的溅射体积流量为Q，其中d1为第一金属层的厚度，爬坡区域水平有效镀膜面积小于爬坡面积。若M2保持同一线宽爬坡，其阻值在爬坡位置变大，这对保持线路阻值均一稳定性有很大影响，尤其是对于数据线的影响。
其中d2为第二金属层的水平区域的厚度，d3为第二金属层的倾斜区域的厚度，d4为第一倾斜区，d7为第一邻接区，d8为第二邻接区，d14为第三邻接区，d12为第二倾斜区，d13为第四邻接区。
如图3至图10所示，本申请一实施例公开了一种显示面板110，所述显示面板110包括第一基板111，所述第一基板111包括：衬底112、形成在所述衬底112上的第一金属层113、第二金属层115以及绝缘层114，设置在所述第一金属层113和所述第二金属层115之间，所述第一金属层113和第二金属层115绝缘；其中，所述第二金属层115包括水平区域116和倾斜区域117，所述倾斜区域117从第一高度130向第二高度131倾斜，所述第一高度130高于第二高度131，所述第二金属层115的水平区域116的厚度大于所述第二金属层115的倾斜区域117的厚度，所述第二金属层115的倾斜区域117的宽度大于所述第二金属层115的水平区域116的宽度。
本方案中，第二金属层115的水平区域116的厚度大于所述第二金属层115的倾斜区域117的厚度，使得倾斜区域117的电阻大于水平区域116的电阻，设置第二金属层115的倾斜区域117的宽度大于第二金属层115的水平区域116的宽度，进而增大第二金属层115在第一金属层113倾斜区域的面积，厚度大的对应宽度小的，两者互补，将厚度小的倾斜区域增大宽度，进而使两者的截面面积相等或接近相等，在电阻材料导电率和单位长度L相同的情况下，最后使得水平区域116和竖直区域的电阻相等或接近相等，从而保持线路阻值的均一稳定，使得显示面板110的显示效果更均匀。
如图3所示，在一实施例中，所述第二金属层115的倾斜区域的与所述衬底112所在平面的夹角为θ1，与所述第一金属层113与所述衬底112所在平面的夹角为θ2，其中，θ1＝θ2。
本方案中，所述倾斜区域的第二金属层115与所述衬底112所在平面的夹角为θ1，与所述第一金属层113与所述衬底112所在平面的夹角为θ2，其中，θ1＝θ2，使得倾斜区域的第二金属层115的线宽平行，整体厚度均一，通过厚度相等，可以计算倾斜区域的宽度加宽多少进而控制倾斜区域的阻值，方便计算。当然两个的夹角也可以不相等，θ1≠θ2也是可以的，角度的设置不进行限定，只要可以保持倾斜区域和水平区域116的线路阻值均一稳定 即可。
如图4所示，在一实施例中，所述倾斜区域的第二金属层115的宽度为d6，所述水平区域116的第二金属层115的宽度为d5，其中满足公式，
Figure PCTCN2018118157-appb-000005
本方案中，倾斜区域的第二金属层115的宽度为d6，水平区域116的第二金属层115的宽度为d5，d5和d6的关系满足：
Figure PCTCN2018118157-appb-000006
d5大于d6，在厚度不发生改变的情况下，增大第二金属层115的倾斜区域的宽度，使得第二金属层115的倾斜区域的面积增大，使得倾斜区域的单位长度的电阻阻值和水平区域116的单位长度的电阻阻值一致，从而改变倾斜区域电阻阻值，保持线路阻值均一稳定性，使得显示面板110的显示效果更均匀。
在一实施例中，所述第二金属层115的水平区域116包括第一区域120、第二区域126和顶部水平区域123，所述顶部水平区域123与第一高度130等高，所述第一区域120和第二区域126与第二高度131等高，所述第一区域120、第二区域126和第三区域的第二金属层115的厚度相等。本方案中，第二金属层115的水平区域116的包括第一区域120，第二区域126和顶部水平区域123，所述第一区域120、第二区域126和顶部水平区域123的厚度都相等，保证了水平方向上第二金属层115的膜厚均一性，使得线路阻值的均一稳定，使得显示面板110的显示效果更均匀。
在一实施例中，所述倾斜区域的第二金属层115的厚度为d3，所述水平区域116的第二金属层115的厚度为d2，所述第二金属层115沿水平方向的长度为L，其中，
Figure PCTCN2018118157-appb-000007
Figure PCTCN2018118157-appb-000008
d2>d3，V为形成第二金属层115时单位时间内第二金属层115在竖直方向的体积。
在一实施例中，所述第二金属层115的倾斜区域包括第一倾斜区域118和第二倾斜区域119，所述第二金属层115的水平区域116包括顶部水平区域123，所述顶部水平区域123与所述第一金属层113的位置对应，所述第一倾斜区域118位于所述顶部水平区域123的一侧，所述第二倾斜区域119位于所述顶部水平区域123的另一侧，所述第一倾斜区域118的宽度大于所述第二金属层的水平区域的宽度，所述第二倾斜区域119的宽度大于所述第二金属层的水平区域的宽度。
本方案中，第一倾斜区域118和第二倾斜区域119的宽度都加宽，相对于只加宽一侧的倾斜区域宽度来说，两侧的倾斜区域都加宽，使得整体电路的均一稳定性更好，使得显示面板110的显示效果更均匀。其中，第一倾斜区域118和第二倾斜区域119的倾斜的夹角可以相等也可以不相等，相等时，第一倾斜区域118和第二倾斜区域119的阻值相等，进而使整体第二金属层115的阻值一致；当不相等时，通过调节不同的宽度实现阻值一致，从而使得显示面板110的显示效果更均匀。
如图5至图8所示，在一实施例中，所述第二金属层115的水平区域116包括第一区域120、第二区域126和顶部水平区域123，所述顶部水平区域123与第一高度130等高，所述第一区域120和第二区域126与第二高度131等高，所述第一区域120包括第一邻接区121和第一走线区122，所述第一邻接区121与所述第一倾斜区域118连接，所述第一走线区122远离所述第一倾斜区域118，所述第一邻接区121和第一倾斜区域118的宽度相等且大于所述第一走线区122的宽度。本方案中，第一邻接区121和第一倾斜区域118都加宽宽度，使得工艺的精度要求降低，电阻阻值增大，对面板的影响不大。
在一实施例中，所述第二金属层115的水平区域116包括第一区域120、第二区域126和顶部水平区域123，所述顶部水平区域123与第一高度130等高，所述第一区域120和第二区域126与第二高度131等高，所述顶部水平区域123包括第二邻接区124和中间区125，所述第二邻接区124与所述第一倾斜区域118连接，所述中间区125远离所述第一倾斜区域118，所述第二邻接区124和第一倾斜区域118的宽度相等且大于所述中间区125的宽度。
在一实施例中，所述第二金属层115的水平区域116包括第一区域120、第二区域126和顶部水平区域123，所述顶部水平区域123与第一高度130等高，所述第一区域120和第二区域126与第二高度131等高，所述第二区域126包括第三邻接区127和第二走线区128，所述第三邻接区127与所述第二倾斜区域119连接，所述第二走线区128远离所述第二倾斜区域119，所述第三邻接区127和第二倾斜区域119的宽度相等且大于所述第二走线区128的宽度。
在一实施例中，所述第二金属层115的水平区域116包括第一区域120、第二区域126和顶部水平区域123，所述顶部水平区域123与第一高度130等高，所述第一区域120和第二区域126与第二高度131等高，所述顶部水平区域123包括第四邻接区129和中间区125，所述第四邻接区129与所述第二倾斜区域119连接，所述中间区125远离所述第二倾斜区域119，所述第四邻接区129和第二倾斜区域119的宽度相等且大于所述中间区125的宽度。这样也是可以的。
为了保证d5的宽度可以制作出来，根据曝光机曝光特性，其中d4和d8的值的范围大于等于2微米(μm)，可选的，d4和d8的值的范围为大于等于0微米，小于等于10μm。θ1的取值范围为5度＜θ1＜85度，11.474*d6≧d5≧1.004*d6，d4、d8、d12和d14的长度小于第一金属层113的长度。
如图9所示，本申请公开了一实施例，一种显示面板110的制作方法，包括：
S1：形成第一基板111的步骤；
S2：形成第二基板的步骤；
S3：把形成的第一基板111和第二基板对置的步骤；
其中，形成第一基板111的步骤S1，包括：
S11：在衬底112上形成第一金属层113；
S12：在所述第一金属层113上形成绝缘层114；
S13：在所述绝缘层114上形成第二金属层115，第二金属层115包括水平区域116和倾斜区域，形成的倾斜区域从第一高度130向第二高度131倾斜，所述第一高度130高于第二高度131，形成的水平区域116的厚度大于所述形成的倾斜区域的厚度，形成的倾斜区域的宽度大于形成的所述水平区域116的宽度。
其中，所述的步骤S1和步骤S2没有先后顺序要求。
本方案中，水平区域116的第二金属层115的厚度大于所述倾斜区域的第二金属层115的厚度，使得倾斜区域的电阻大于水平区域116的电阻，设置倾斜区域的第二金属层115的宽度大于水平区域116的第二金属层115的宽度，进而增大第二金属层115在第一金属层113倾斜区域的面积，厚度大的对应宽度小的，两者互补，将厚度小的倾斜区域增大宽度，进而使两者的截面面积相等或接近相等，在电阻材料导电率ρ和单位长度L相同的情况下，最后使得水平区域116和竖直区域的电阻相等或接近相等，从而保持线路阻值的均一稳定，使得显示面板110的显示效果更均匀。
在一实施例中，在所述绝缘层114上形成第二金属层115，第二金属层115包括水平区域116和倾斜区域的步骤，其中，所述第二金属层115的倾斜区域的宽度为d6，所述第二金属层115的水平区域116的宽度为d5，
Figure PCTCN2018118157-appb-000009
本方案中，第二金属层115的倾斜区域的宽度为d6，第二金属层115的水平区域116的宽度为d5，
Figure PCTCN2018118157-appb-000010
d5大于d6，在厚度不发生改变的情况下，增大倾斜区域的宽度，使得第二金属层115的倾斜区域的面积增大，从而改变倾斜区域电阻阻值，保持线路阻值均一稳定性。
如图10所示，本申请还公开了一种显示装置100，包括上述的显示面板110。
本申请公开了一种显示面板110，所述显示面板110包括：第一基板111，所述第一基板111包括衬底112、形成在所述衬底112上的第一金属层113、第二金属层115以及绝缘层114，所述绝缘层114设置在所述第一金属层113和所述第二金属层115之间，所述第一金属层113和第二金属层115绝缘；所述第二金属层115包括水平区域116和倾斜区域，所述倾斜区域从第一高度130向第二高度131倾斜，所述第一高度130高于第二高度131，所述水平区域116的第二金属层115的厚度大于所述倾斜区域的第二金属层115的厚度，所述倾斜区域的第二金属层115的宽度大于所述水平区域116的第二金属层115的宽度。所述倾斜区域的第二金属层115与所述衬底112所在平面的夹角为，与所述第一金属层113与所述 衬底112所在平面的夹角为，其中，θ1＝θ2。
所述第二金属层115的水平区域116包括第一区域120、第二区域126和顶部水平区域123，所述顶部水平区域123与第一高度130等高，所述第一区域120和第二区域126与第二高度131等高，所述第一区域120包括第一邻接区121和第一走线区122，所述第二区域126包括第三邻接区127和第二走线区128，所述顶部水平区域123包括第二邻接区124、第四邻接区129和中间区125，所述第一邻接区121、第二邻接区124、第三邻接区127和第四邻接区129，以及第一倾斜区和第二倾斜区的宽度都加宽。
本方案中，水平区域116的第二金属层115的厚度大于所述倾斜区域的第二金属层115的厚度，使得倾斜区域的电阻大于水平区域116的电阻，设置倾斜区域的第二金属层115的宽度大于水平区域116的第二金属层115的宽度，进而增大第二金属层115在第一金属层113倾斜区域的面积，厚度大的对应宽度小的，两者互补，将厚度小的倾斜区域增大宽度，进而使两者的截面面积相等或接近相等，在电阻材料导电率ρ和单位长度L相同的情况下，最后使得水平区域116和竖直区域的电阻相等或接近相等，从而保持线路阻值的均一稳定，使得显示面板110的显示效果更均匀。
需要说明的是，本方案中涉及到的各步骤的限定，在不影响具体方案实施的前提下，并不认定为对步骤先后顺序做出限定，写在前面的步骤可以是在先执行的，也可以是在后执行的，甚至也可以是同时执行的，只要能实施本方案，都应当视为属于本申请的保护范围。
本申请的技术方案可以广泛用于各种显示面板，如扭曲向列型(Twisted Nematic，TN)显示面板、平面转换型(In-Plane Switching，IPS)显示面板、垂直配向型(Vertical Alignment，VA)显示面板、多象限垂直配向型(Multi-Domain Vertical Alignment，MVA)显示面板，当然，也可以是其他类型的显示面板，如有机发光二极管(Organic Light-Emitting Diode，OLED)显示面板，均可适用上述方案。
以上内容是结合具体的可选的实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (17)

  1. 一种显示面板，包括：
    第一基板，所述第一基板包括：
    衬底；
    第一金属层，形成在所述衬底上；
    第二金属层；以及
    绝缘层，设置在所述第一金属层和所述第二金属层之间，所述第一金属层和第二金属层绝缘；
    其中，所述第二金属层包括水平区域和倾斜区域，所述倾斜区域从第一高度向第二高度倾斜，所述第一高度高于第二高度，所述第二金属层的水平区域的厚度大于所述第二金属层的倾斜区域的厚度，所述第二金属层的倾斜区域的宽度大于所述第二金属层的水平区域的宽度。
  2. 如权利要求1所述的一种显示面板，其中，所述第二金属层的倾斜区域与所述衬底所在平面的夹角为θ1，所述第一金属层与所述衬底所在平面的夹角为θ2，其中，θ1＝θ2。
  3. 如权利要求1所述的一种显示面板，其中，所述第二金属层的倾斜区域与所述衬底所在平面的夹角为θ1，所述第一金属层与所述衬底所在平面的夹角为θ2，其中，θ1不等于θ2。
  4. 如权利要求2所述的一种显示面板，其中，所述第二金属层的倾斜区域的宽度为d6，所述第二金属层的水平区域的宽度为d5，其中，
    Figure PCTCN2018118157-appb-100001
  5. 如权利要求1所述的一种显示面板，其中，所述第二金属层的倾斜区域包括第一倾斜区域和第二倾斜区域，所述第二金属层的水平区域包括顶部水平区域，所述顶部水平区域与所述第一金属层的位置对应，所述第一倾斜区域位于所述顶部水平区域的一侧，所述第二倾斜区域位于所述顶部水平区域的另一侧，所述第一倾斜区域的宽度大于所述第二金属层的水平区域的宽度，所述第二倾斜区域的宽度大于所述第二金属层的水平区域的宽度。
  6. 如权利要求5所述的一种显示面板，其中，所述第二金属层的水平区域包括第一区域和第二区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述第一区域包括第一邻接区和第一走线区，所述第一邻接区与所述第一倾斜区域连接，所述第一走线区远离所述第一倾斜区域，所述第一邻接区和第一倾斜区域的宽度相等且大于所述第一走线区的宽度。
  7. 如权利要求5所述的一种显示面板，其中，所述第二金属层的水平区域包括第一区域、第二区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等 高，所述顶部水平区域包括第二邻接区和中间区，所述第二邻接区与所述第一倾斜区域连接，所述中间区远离所述第一倾斜区域，所述第二邻接区和第一倾斜区域的宽度相等且大于所述中间区的宽度。
  8. 如权利要求5所述的一种显示面板，其中，所述第二金属层的水平区域包括第一区域、第二区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述第二区域包括第三邻接区和第二走线区，所述第三邻接区与所述第二倾斜区域连接，所述第二走线区远离所述第二倾斜区域，所述第三邻接区和第二倾斜区域的宽度相等且大于所述第二走线区的宽度。
  9. 如权利要求5所述的一种显示面板，其中，所述第二金属层的水平区域包括第一区域、第二区域和顶部水平区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述顶部水平区域包括第四邻接区和中间区，所述第四邻接区与所述第二倾斜区域连接，所述中间区远离所述第二倾斜区域，所述第四邻接区和第二倾斜区域的宽度相等且大于所述中间区的宽度。
  10. 如权利要求1所述的一种显示面板，其中，所述第二金属层的水平区域包括第一区域、第二区域和顶部水平区域，所述顶部水平区域与第一高度等高，所述第一区域和第二区域与第二高度等高，所述第一区域、第二区域和第三区域的第二金属层的厚度相等。
  11. 如权利要求2所述的一种显示面板，其中，所述第二金属层的倾斜区域的厚度为d3，所述第二金属层的水平区域的厚度为d2，d2>d3。
  12. 如权利要求11所述的一种显示面板，其中，
    Figure PCTCN2018118157-appb-100002
    L为所述第二金属层的长度，V为形成第二金属层时单位时间第二金属层在竖直方向的体积。
  13. 如权利要求1所述的一种显示面板，其中，所述倾斜区域的单位长度的电阻阻值和所述水平区域的单位长度的电阻阻值相等。
  14. 如权利要求5所述的一种显示面板，其中，所述第一倾斜区域的倾斜的夹角等于所述第二倾斜区域的倾斜的夹角。
  15. 如权利要求14所述的一种显示面板，其中，所述第一倾斜区域的阻值和所述第二倾斜区域的阻值相等。
  16. 一种显示面板的制作方法，包括步骤：
    形成第一基板的步骤；
    其中，形成第一基板的步骤中，包括：
    在衬底上形成第一金属层；
    在所述第一金属层上形成绝缘层；
    在所述绝缘层上形成第二金属层，第二金属层包括水平区域和倾斜区域，形成的倾斜区 域从第一高度向第二高度倾斜，所述第一高度高于第二高度，形成的水平区域的厚度大于所述形成的倾斜区域的厚度，形成的倾斜区域的宽度大于形成的所述水平区域的宽度。
  17. 一种显示装置，包括显示面板，所述显示面板包括：
    第一基板，所述第一基板包括：
    衬底；
    第一金属层，形成在所述衬底上；
    第二金属层；以及
    绝缘层，设置在所述第一金属层和所述第二金属层之间，所述第一金属层和第二金属层绝缘；
    其中，所述第二金属层包括水平区域和倾斜区域，所述倾斜区域从第一高度向第二高度倾斜，所述第一高度高于第二高度，所述第二金属层的水平区域的厚度大于所述第二金属层的倾斜区域的厚度，所述第二金属层的倾斜区域的宽度大于所述第二金属层的水平区域的宽度。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112838099A (zh) * 2021-01-07 2021-05-25 深圳市华星光电半导体显示技术有限公司 显示面板以及显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113345322A (zh) * 2020-03-02 2021-09-03 元太科技工业股份有限公司 显示面板的走线结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101055353A (zh) * 2007-04-29 2007-10-17 友达光电股份有限公司 液晶显示器及其支撑结构
CN103730508A (zh) * 2012-10-16 2014-04-16 瀚宇彩晶股份有限公司 显示面板的垂直式薄膜晶体管结构及其制作方法
CN106654047A (zh) * 2016-12-22 2017-05-10 武汉华星光电技术有限公司 Oled显示面板及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236266A (ja) * 1984-05-10 1985-11-25 Matsushita Electric Ind Co Ltd 半導体装置
US5287206A (en) * 1990-11-30 1994-02-15 Sharp Kabushiki Kaisha Active matrix display device
WO2009116177A1 (ja) * 2008-03-21 2009-09-24 株式会社島津製作所 光マトリックスデバイス
CN104977736A (zh) * 2014-04-09 2015-10-14 群创光电股份有限公司 具有线宽变化的导电层的显示面板
CN104460150B (zh) * 2014-12-09 2018-09-04 深圳市华星光电技术有限公司 阵列基板、液晶显示面板及该阵列基板的制造方法
KR102374554B1 (ko) 2015-10-02 2022-03-15 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101055353A (zh) * 2007-04-29 2007-10-17 友达光电股份有限公司 液晶显示器及其支撑结构
CN103730508A (zh) * 2012-10-16 2014-04-16 瀚宇彩晶股份有限公司 显示面板的垂直式薄膜晶体管结构及其制作方法
CN106654047A (zh) * 2016-12-22 2017-05-10 武汉华星光电技术有限公司 Oled显示面板及其制作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112838099A (zh) * 2021-01-07 2021-05-25 深圳市华星光电半导体显示技术有限公司 显示面板以及显示装置

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