WO2020093266A1 - Wafer, intelligent processor and electrical equipment - Google Patents

Wafer, intelligent processor and electrical equipment Download PDF

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Publication number
WO2020093266A1
WO2020093266A1 PCT/CN2018/114356 CN2018114356W WO2020093266A1 WO 2020093266 A1 WO2020093266 A1 WO 2020093266A1 CN 2018114356 W CN2018114356 W CN 2018114356W WO 2020093266 A1 WO2020093266 A1 WO 2020093266A1
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WO
WIPO (PCT)
Prior art keywords
power supply
supply area
pad
pads
wafer
Prior art date
Application number
PCT/CN2018/114356
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French (fr)
Chinese (zh)
Inventor
杨帅
郭函
Original Assignee
北京比特大陆科技有限公司
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Publication date
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Priority to PCT/CN2018/114356 priority Critical patent/WO2020093266A1/en
Publication of WO2020093266A1 publication Critical patent/WO2020093266A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • This application relates to the field of electrical equipment, for example, to a wafer, intelligent processor and electrical equipment.
  • a circuit board and an intelligent processor installed on the circuit board are provided in the electrical equipment, and the intelligent processor is electrically connected to the circuit on the circuit board.
  • an intelligent processor includes a wafer and a substrate.
  • the wafer has a first power supply area and a second power supply area spaced apart.
  • Each of the first power supply area and the second power supply area has a plurality of pads, and each A pad is electrically connected to a solder ball on the substrate; the substrate is connected to the circuit board, and the solder ball on the substrate is electrically connected to the circuit on the circuit board to realize the connection between the intelligent processor and the circuit board.
  • An embodiment of the present disclosure provides a wafer having a first power supply area on the wafer, the first power supply area including a plurality of first pads and a plurality of second pads; the first power supply area The first pad of the first power supply area is connected in parallel, and the second pad of the first power supply area is connected in parallel, and the first pad in the first power supply area is used as a power input end of the first power supply area to supply power for the first The internal components of the area supply power; the second pad in the first power supply area serves as the ground terminal of the first power supply area.
  • the wafer has a second power supply area spaced apart from the first power supply area, the second power supply area includes a plurality of second pads and third pads, The second pads in the second power supply area are connected in parallel, and the third pads in the second power supply area are connected in parallel; and the second pads in the second power supply area are used as the power input end of the second power supply area To supply power to the internal components of the second power supply area; the third pad in the second power supply area serves as the ground terminal of the second power supply area.
  • the second pad in the first power supply area is connected to the second pad in the second power supply area.
  • the wafer further includes a third power supply area, and the third power supply area is spaced apart from the first power supply area and the second power supply area, and the third power supply The area includes a plurality of third pads and a plurality of fourth pads;
  • the third pads in the third power supply area are connected in parallel, and the fourth pads in the third power supply area are connected in parallel; and the third pad in the third power supply area serves as the power input end of the third power supply area To supply power to the internal components of the third power supply area; the fourth pad in the third power supply area serves as the ground terminal of the third power supply area.
  • the third pad in the third power supply area is connected to the third pad in the second power supply area.
  • the internal components of the first power supply area, the second power supply area, and the third power supply area include multiple computing cores.
  • An embodiment of the present disclosure also provides an intelligent processor, including: a substrate and a wafer mounted on the substrate;
  • the wafer has a first power supply area, the first power supply area includes a plurality of first pads and a plurality of second pads; the first pads in the first power supply area are connected in parallel, the first The second pads in the power supply area are connected in parallel, and the first pads in the first power supply area are used as the power input end of the first power supply area to supply power to the internal components of the first power supply area; the first power supply The second pad in the area serves as the ground terminal of the first power supply area.
  • the wafer has a second power supply area spaced apart from the first power supply area, and the second power supply area includes a plurality of second pads and third pads , The second pads in the second power supply area are connected in parallel, and the third pads in the second power supply area are connected in parallel; and the second pads in the second power supply area are used as the power input of the second power supply area Terminal to power the internal components of the second power supply area; the third pad in the second power supply area serves as the ground terminal of the second power supply area.
  • the second pad in the first power supply area is connected to the second pad in the second power supply area.
  • the wafer further includes a third power supply area, and the third power supply area is spaced apart from the first power supply area and the second power supply area.
  • the power supply area includes multiple third pads and multiple fourth pads;
  • the third pads in the third power supply area are connected in parallel, and the fourth pads in the third power supply area are connected in parallel; and the third pad in the third power supply area serves as the power input end of the third power supply area To supply power to the internal components of the third power supply area; the fourth pad in the third power supply area serves as the ground terminal of the third power supply area.
  • the third pad in the third power supply area is connected to the third pad in the second power supply area.
  • the internal components of the first power supply area, the second power supply area, and the third power supply area include multiple computing cores.
  • a first circuit is provided on the substrate, and the second pad in the first power supply area and the second pad in the second power supply area pass through the first One circuit connection.
  • a second circuit is further provided on the substrate, and the third pad in the second power supply area and the third pad in the third power supply area pass through the Second circuit connection.
  • the smart processor as described above, preferably, the smart processor further includes a packaging cover, the wafer is provided on a mounting surface of the substrate, the packaging cover is provided on the wafer, and the The mounting surface is connected.
  • the packaging cover is a plastic cover, a ceramic cover or a metal cover.
  • the intelligent processor is preferably a chip.
  • An embodiment of the present disclosure also provides an electrical device, including: the intelligent processor as described above.
  • the intelligent processor and the electrical equipment provided by the embodiments of the present disclosure, by connecting the first pads in the first power supply area in parallel and the second pads in the first power supply area in parallel, the first One pad can be connected to the power supply through one or several first solder balls on the substrate, and the second pad of the first power supply area can be grounded through one or several second solder balls, so that the first solder balls and the second solder balls
  • the number is less than the number of all pads in the first power supply area; compared with a solder ball corresponding to each pad in the first power supply area, the number of solder balls on the substrate is reduced, thereby simplifying the substrate
  • the structure reduces the production cost.
  • FIG. 1 is a schematic structural diagram of an intelligent processor provided by this embodiment
  • FIG. 2 is a schematic structural diagram of a wafer provided by this embodiment.
  • the first power supply area
  • FIG. 2 is a schematic structural diagram of a wafer provided by this embodiment.
  • This embodiment provides a wafer 10 having a first power supply area 101 on the wafer 10, the first power supply area 101 includes a plurality of first pads and a plurality of second pads; the first solder in the first power supply area
  • the disks 1011 are connected in parallel, the second pads 1012 in the first power supply area are connected in parallel, and the first pads 1011 in the first power supply area serve as the power input end of the first power supply area 101, and the second pads in the first power supply area 1012 serves as the ground terminal of the first power supply area.
  • the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area may be metal sheets disposed on the wafer 10.
  • the first pad 1011 in the first power supply area is used as a power input terminal, and the first pad 1011 in the first power supply area can be connected to the power supply to the first pad 1011 in the first power supply area Provide a higher potential.
  • the second pad 1012 in the first power supply area as the ground terminal may be that the potential of the second pad 1012 in the first power supply area is zero, and of course the second pad 1012 in the first power supply area may not be zero , As long as the second pad 1012 in the first power supply area has a certain reference potential, so that there is a certain voltage between the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area can.
  • the first power supply area 101 includes a plurality of first pads and a plurality of second pads, and the first pads 1011 in the plurality of first power supply areas are arranged in parallel to each other.
  • the second pads 1021 in the plurality of first power supply regions are arranged in parallel to each other, and the first vertical column and the second vertical column are alternately arranged.
  • the first pads 1011 in each first power supply area may be connected in parallel for each first vertical column of the first pad.
  • the second pads 1012 in the first power supply area may be connected in parallel The second pads of each second vertical column are connected in parallel.
  • the parallel connection of the first pads 1011 in the first power supply area may be parallel to all the first vertical pads.
  • the parallel connection of the second pads 1012 in the first power supply area may be all The second pads of the second vertical column are connected in parallel.
  • the first pad 1011 in the first power supply area may be connected in parallel through the first connection metal layer with a certain pattern on the wafer 10, and similarly, the second pad 1012 in the first power supply area may be The second connecting metal layer with a certain pattern on the wafer 10 is connected in parallel.
  • the wafer 10 in this embodiment is provided on the mounting surface of the substrate, and the first solder ball and the second solder ball are provided on the bonding surface of the substrate opposite to the mounting surface, and the first pad in the first power supply area 1011 is connected to the power source through the first solder ball, and the second pad 1012 in the first power supply area is grounded through the second solder ball.
  • the first pad 1011 in the first power supply area in parallel and the second pad 1012 in the first power supply area in parallel by connecting the first pad 1011 in the first power supply area in parallel and the second pad 1012 in the first power supply area in parallel, the first pad 1011 in the first power supply area can pass through One or several first solder balls on the substrate are connected to the power supply, and the second pad 1012 of the first power supply area may be grounded through one or several second solder balls, so that the number of first solder balls and second solder balls is less than The number of all pads in the first power supply area 101; compared with each solder pad in the first power supply area 101, the number of solder balls on the substrate is reduced, thereby simplifying the structure of the substrate 20 , Reducing production costs.
  • the wafer 10 has a second power supply area 102 spaced apart from the first power supply area 101.
  • the second power supply area 102 includes a plurality of second pads and a third pad.
  • the two pads 1021 are connected in parallel, and the third pads 1022 in the second power supply area are connected in parallel; and the second pads 1021 in the second power supply area serve as the power input end of the second power supply area 102 to be the internal components of the second power supply area Power supply; the third pad 1022 in the second power supply area serves as the ground terminal of the second power supply area 102.
  • the second pads 1021 in the plurality of second power supply areas are arranged in parallel third columns, and the third pads 1022 in the second power supply areas are arranged in parallel fourth positions.
  • the vertical column, the third vertical column and the fourth vertical column are alternately arranged.
  • the second pads 1021 in each second power supply area may be connected in parallel for each second vertical pad, and correspondingly, the third pads 1022 in the second power supply area may be connected in parallel
  • the third pads of each fourth vertical column may be connected in parallel.
  • the parallel connection of the second pads 1021 in each second power supply area may be parallel of all second vertical second pads.
  • the parallel connection of the third pads 1022 in the second power supply area may be All third pads 1022 in the second vertical column are connected in parallel.
  • the second pad 1021 in the second power supply area may be connected in parallel through a third connection metal layer with a certain pattern on the wafer 10, and similarly, the third pad 1022 in the second power supply area may be The fourth connection metal layer with a certain pattern on the wafer 10 is connected in parallel.
  • the second pad 1012 in the first power supply area is connected to the second pad 1021 in the second power supply area. Only the first pad 1011 in the first power supply area and the second pad 1022 in the second power supply area can supply power to the first power supply area 101 and the second power supply area 102, so as to further reduce the installation on the substrate 20 Number of solder balls.
  • the wafer 10 further includes a third power supply area 103, which is spaced apart from the first power supply area 101 and the second power supply area 102.
  • the third power supply area 103 includes a plurality of third pads and A plurality of fourth pads; the third pad 1031 in the third power supply area is connected in parallel, and the fourth pad 1032 in the third power supply area is connected in parallel; and the third pad 1031 in the third power supply area serves as the third power supply area
  • the power input terminal of 103 is used to supply power to the internal components of the third power supply area; the fourth pad 1032 in the third power supply area serves as the ground terminal of the third power supply area 103.
  • the third pads 1031 in the plurality of third power supply areas are arranged in a plurality of fifth vertical columns parallel to each other, and the fourth pads 1032 in the plurality of third power supply areas are arranged in a plurality of parallel sixth numbers. Vertical columns, fifth vertical columns and sixth vertical columns are alternately arranged.
  • the third pad 1031 in the third power supply area may be connected in parallel through the fifth connecting metal layer with a certain pattern on the wafer 10, and similarly, the fourth pad 1032 in the third power supply area may be The sixth connection metal layer with a certain pattern on the wafer 10 is connected in parallel.
  • the third pad 1031 in the third power supply area is connected to the third pad 1022 in the second power supply area. It is only necessary to supply power to the first power supply area 101, the second power supply area 102, and the third power supply area 103 through the first pad 1011 in the first power supply area and the fourth pad 1032 in the third power supply area, to The number of solder balls provided on the substrate 20 is further reduced.
  • the internal components in the first power supply area, the internal components in the second power supply area, and the internal components in the third power supply include multiple computing cores.
  • the calculation core is provided on the wafer 10 and has a certain logical structure. The calculation core is used for data processing, calculation, and other operations.
  • the wafer 10 in this embodiment may also have four power supply areas, five power supply areas, etc .; correspondingly, each power supply area has an internal component and a pad connected to the internal component.
  • the disk as the power input end of the power supply area is connected to a pad of the previous power supply area, and the other pad of the power supply area is connected to a pad of the next power supply area as the ground terminal of the power supply area, that is, each The internal components in the power supply area are connected in series, so that only the first pad 1011 in the first power supply area is used as the power input terminal, and the last pad in the last power supply area is used as the ground terminal.
  • the internal parts are powered.
  • FIG. 1 is a schematic structural diagram of an intelligent processor provided in this embodiment. Please refer to Figure 1 and Figure 2.
  • This embodiment provides an intelligent processor, including: a substrate 20 and a wafer 10 mounted on a substrate 02; wherein the structure of the wafer 10 is substantially the same as that of the above-mentioned wafer 10, which will not be repeated here.
  • a first circuit is provided on the substrate 20, and the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area are connected by the first circuit.
  • the first circuit on the substrate 20 realizes the connection between the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area, which can avoid crystals caused by placing more metal pieces on the wafer 10 Circle 10 is difficult to process.
  • a second circuit is further provided on the substrate 20, and the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area are connected by a second circuit.
  • the connection between the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be achieved by the second circuit on the substrate 20, which can further avoid placing more metal on the wafer 10
  • the wafer 10 is difficult to process due to the wafer.
  • the first circuit connects the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area, and connects all the second pads 1012 in the first power supply area and all the first The second pads 1021 in the second power supply area are connected in parallel; similarly, the second circuit connects the third pads 1022 in the second power supply area and the third pads 1031 in the third power supply area The third pads 1022 in the power supply area and the third pads 1031 in all third power supply areas are connected in parallel.
  • the substrate 20 may include at least two metal plates and an insulating plate between two adjacent metal plates, and the corresponding first circuit and second circuit may be formed on the same metal plate; of course, in order to avoid the same metal plate
  • the circuit pattern on the above is relatively complicated, and the first circuit and the second circuit can be located on different metal layers.
  • the first circuit and the second circuit may be both provided on the metal plate of the substrate 20 near the mounting surface, or the first circuit and the second circuit are both provided on the metal plate of the substrate 20 near the bonding surface.
  • the first circuit is provided on the metal plate close to the mounting surface, and the second circuit is provided on the metal between the metal plate close to the mounting surface and the metal plate close to the bonding surface Board; or the first circuit is set on the metal plate near the bonding surface, and the second circuit is set on the metal plate between the metal plate near the mounting surface and the metal plate near the bonding surface; or the second circuit is set On the metal plate close to the mounting surface, and the first circuit is set on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface; or the second circuit is set on the metal plate close to the bonding surface And the first circuit is provided on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface.
  • the first circuit and the second circuit in this embodiment are metal plates with certain patterns formed by patterning the metal plates.
  • the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be directly connected to the first circuit when the first circuit is located On other metal plates, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be connected to the first circuit through the via; similarly, when the second circuit is located close to the installation On the metal plate on the surface, the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be directly connected to the second circuit.
  • the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area may be connected to the second circuit through a via.
  • the intelligent processor further includes a packaging cover 30, the wafer 10 is disposed on the mounting surface of the substrate 20, the packaging cover 30 is disposed on the wafer 10, and is connected to the mounting surface.
  • the encapsulation cover 30 can seal the wafer 10, and at the same time, the encapsulation cover 30 can also protect the wafer 10 to prevent damage to the wafer 10 caused by contact of external objects with the wafer 10.
  • the package cover 30 is a plastic cover, a ceramic cover or a metal cover.
  • the intelligent processor in this embodiment is a chip.
  • an electrical device including: the intelligent processor as described above.
  • first, second, etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another.
  • the first element can be called the second element, and likewise, the second element can be called the first element, as long as all occurrences of the "first element” are consistently renamed and all occurrences of The “second component” can be renamed consistently.
  • the first element and the second element are both elements, but they may not be the same element.

Abstract

A wafer (10), an intelligent processor and electrical equipment. The wafer (10) is provided thereon with a first power supply zone (101). The first power supply zone (101) comprises a plurality of first bonding pads (1011) and a plurality of second bonding pads (1012). The first bonding pads (1011) in the first power supply zone (101) are connected in parallel, the second bonding pads (1012) in the first power supply zone (101) are connected in parallel, the first bonding pads (1011) in the first power supply zone (101) serve as a power input end of the first power supply zone (101), and the second bonding pads (1012) in the first power supply zone (101) serve as a grounding end of the first power supply zone (101), so that the first bonding pads (1011) in the first power supply zone (101) can be connected to a power supply by means of one or more first solder balls on a substrate (20), and the second bonding pads (1012) in the first power supply zone can be grounded by means of one or more second solder balls. The number of the first solder balls and the number of the second solder balls are less than the number of all the bonding pads in the first power supply zone (101). Compared with the mode that each bonding pad in the first power supply zone (101) is correspondingly provided with one solder ball, the number of the solder balls on the substrate (20) is reduced, the structure of the substrate (20) is simplified, and the production cost is reduced.

Description

晶圆、智能处理器及电器设备Wafers, intelligent processors and electrical equipment 技术领域Technical field
本申请涉及电器设备领域,例如涉及一种晶圆、智能处理器及电器设备。This application relates to the field of electrical equipment, for example, to a wafer, intelligent processor and electrical equipment.
背景技术Background technique
在电器设备内设置有电路板以及安装在电路板上的智能处理器,智能处理器与电路板上的电路电连接。A circuit board and an intelligent processor installed on the circuit board are provided in the electrical equipment, and the intelligent processor is electrically connected to the circuit on the circuit board.
现有技术中,智能处理器包括晶圆以及基板,晶圆上具有间隔设置的第一供电区和第二供电区,第一供电区和第二供电区内均具有多个焊盘,并且每一焊盘与基板上的一个焊球电连接;基板与电路板连接,且基板上的焊球与电路板上的电路电连接,以实现智能处理器与电路板之间的连接。In the prior art, an intelligent processor includes a wafer and a substrate. The wafer has a first power supply area and a second power supply area spaced apart. Each of the first power supply area and the second power supply area has a plurality of pads, and each A pad is electrically connected to a solder ball on the substrate; the substrate is connected to the circuit board, and the solder ball on the substrate is electrically connected to the circuit on the circuit board to realize the connection between the intelligent processor and the circuit board.
然而,晶圆上的焊盘较多,使得基板上与焊盘连接的焊球较多,导致智能处理器的生产成本较高。However, there are more pads on the wafer, which results in more solder balls connected to the pads on the substrate, resulting in a higher production cost of the intelligent processor.
发明内容Summary of the invention
本公开实施例提供了一种晶圆,所述晶圆上具有第一供电区,所述第一供电区包括多个第一焊盘和多个第二焊盘;所述第一供电区内的第一焊盘并联,所述第一供电区内的第二焊盘并联,且所述第一供电区内的第一焊盘作为第一供电区的电源输入端,以为所述第一供电区的内部件供电;所述第一供电区内的第二焊盘作为第一供电区的接地端。An embodiment of the present disclosure provides a wafer having a first power supply area on the wafer, the first power supply area including a plurality of first pads and a plurality of second pads; the first power supply area The first pad of the first power supply area is connected in parallel, and the second pad of the first power supply area is connected in parallel, and the first pad in the first power supply area is used as a power input end of the first power supply area to supply power for the first The internal components of the area supply power; the second pad in the first power supply area serves as the ground terminal of the first power supply area.
如上所述的晶圆,优选地,所述晶圆上具有与所述第一供电区间隔设置的第二供电区,所述第二供电区包括多个第二焊盘和第三焊盘,所述第二供电区内的第二焊盘并联,所述第二供电区内的第三焊盘并联;且所述第二供电区内的第二焊盘作为第二供电区的电源输入端,以为所述第二供 电区的内部件供电;所述第二供电区内的第三焊盘作为所述第二供电区的接地端。As described above, preferably, the wafer has a second power supply area spaced apart from the first power supply area, the second power supply area includes a plurality of second pads and third pads, The second pads in the second power supply area are connected in parallel, and the third pads in the second power supply area are connected in parallel; and the second pads in the second power supply area are used as the power input end of the second power supply area To supply power to the internal components of the second power supply area; the third pad in the second power supply area serves as the ground terminal of the second power supply area.
如上所述的晶圆,优选地,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接。In the wafer as described above, preferably, the second pad in the first power supply area is connected to the second pad in the second power supply area.
如上所述的晶圆,优选地,所述晶圆还包括第三供电区,所述第三供电区与所述第一供电区和所述第二供电区间隔的设置,所述第三供电区包括多个第三焊盘和多个第四焊盘;For the wafer as described above, preferably, the wafer further includes a third power supply area, and the third power supply area is spaced apart from the first power supply area and the second power supply area, and the third power supply The area includes a plurality of third pads and a plurality of fourth pads;
所述第三供电区内的第三焊盘并联,所述第三供电区内的第四焊盘并联;且所述第三供电区内的第三焊盘作为第三供电区的电源输入端,以为所述第三供电区的内部件供电;所述第三供电区内的第四焊盘作为第三供电区的接地端。The third pads in the third power supply area are connected in parallel, and the fourth pads in the third power supply area are connected in parallel; and the third pad in the third power supply area serves as the power input end of the third power supply area To supply power to the internal components of the third power supply area; the fourth pad in the third power supply area serves as the ground terminal of the third power supply area.
如上所述的晶圆,优选地,所述第三供电区内的第三焊盘与所述第二供电区内的第三焊盘连接。In the wafer as described above, preferably, the third pad in the third power supply area is connected to the third pad in the second power supply area.
如上所述的晶圆,优选地于,所述第一供电区、第二供电区和第三供电区的内部件包括多个计算内核。For the wafer as described above, preferably, the internal components of the first power supply area, the second power supply area, and the third power supply area include multiple computing cores.
本公开实施例还提供一种智能处理器,包括:基板以及安装在所述基板上的晶圆;An embodiment of the present disclosure also provides an intelligent processor, including: a substrate and a wafer mounted on the substrate;
所述晶圆上具有第一供电区,所述第一供电区包括多个第一焊盘和多个第二焊盘;所述第一供电区内的第一焊盘并联,所述第一供电区内的第二焊盘并联,且所述第一供电区内的第一焊盘作为第一供电区的电源输入端,以为所述第一供电区的内部件供电;所述第一供电区内的第二焊盘作为第一供电区的接地端。The wafer has a first power supply area, the first power supply area includes a plurality of first pads and a plurality of second pads; the first pads in the first power supply area are connected in parallel, the first The second pads in the power supply area are connected in parallel, and the first pads in the first power supply area are used as the power input end of the first power supply area to supply power to the internal components of the first power supply area; the first power supply The second pad in the area serves as the ground terminal of the first power supply area.
如上所述的智能处理器,优选地,所述晶圆上具有与所述第一供电区间隔设置的第二供电区,所述第二供电区包括多个第二焊盘和第三焊盘,所述第二供电区内的第二焊盘并联,所述第二供电区内的第三焊盘并联;且所述第二供电区内的第二焊盘作为第二供电区的电源输入端,以为所述 第二供电区的内部件供电;所述第二供电区内的第三焊盘作为所述第二供电区的接地端。In the smart processor as described above, preferably, the wafer has a second power supply area spaced apart from the first power supply area, and the second power supply area includes a plurality of second pads and third pads , The second pads in the second power supply area are connected in parallel, and the third pads in the second power supply area are connected in parallel; and the second pads in the second power supply area are used as the power input of the second power supply area Terminal to power the internal components of the second power supply area; the third pad in the second power supply area serves as the ground terminal of the second power supply area.
如上所述的智能处理器,优选地,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接。In the smart processor as described above, preferably, the second pad in the first power supply area is connected to the second pad in the second power supply area.
如上所述的智能处理器,优选地,所述晶圆还包括第三供电区,所述第三供电区与所述第一供电区和所述第二供电区间隔的设置,所述第三供电区包括多个第三焊盘和多个第四焊盘;In the smart processor as described above, preferably, the wafer further includes a third power supply area, and the third power supply area is spaced apart from the first power supply area and the second power supply area. The power supply area includes multiple third pads and multiple fourth pads;
所述第三供电区内的第三焊盘并联,所述第三供电区内的第四焊盘并联;且所述第三供电区内的第三焊盘作为第三供电区的电源输入端,以为所述第三供电区的内部件供电;所述第三供电区内的第四焊盘作为第三供电区的接地端。The third pads in the third power supply area are connected in parallel, and the fourth pads in the third power supply area are connected in parallel; and the third pad in the third power supply area serves as the power input end of the third power supply area To supply power to the internal components of the third power supply area; the fourth pad in the third power supply area serves as the ground terminal of the third power supply area.
如上所述的智能处理器,优选地,所述第三供电区内的第三焊盘与所述第二供电区内的第三焊盘连接。In the smart processor as described above, preferably, the third pad in the third power supply area is connected to the third pad in the second power supply area.
如上所述的智能处理器,优选地,所述第一供电区、第二供电区和第三供电区的内部件包括多个计算内核。In the above intelligent processor, preferably, the internal components of the first power supply area, the second power supply area, and the third power supply area include multiple computing cores.
如上所述的智能处理器,优选地,所述基板上设置有第一电路,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘通过所述第一电路连接。In the smart processor as described above, preferably, a first circuit is provided on the substrate, and the second pad in the first power supply area and the second pad in the second power supply area pass through the first One circuit connection.
如上所述的智能处理器,优选地,所述基板上还设置有第二电路,所述第二供电区内的第三焊盘与所述第三供电区内的第三焊盘通过所述第二电路连接。In the smart processor as described above, preferably, a second circuit is further provided on the substrate, and the third pad in the second power supply area and the third pad in the third power supply area pass through the Second circuit connection.
如上所述的智能处理器,优选地,所述智能处理器还包括封装罩,所述晶圆设置在所述基板的安装面上,所述封装罩罩设置在所述晶圆上,且与所述安装面连接。The smart processor as described above, preferably, the smart processor further includes a packaging cover, the wafer is provided on a mounting surface of the substrate, the packaging cover is provided on the wafer, and the The mounting surface is connected.
如上所述的智能处理器,优选地,所述封装罩为塑料罩或陶瓷罩或金属罩。In the above intelligent processor, preferably, the packaging cover is a plastic cover, a ceramic cover or a metal cover.
如上所述的智能处理器,优选地,所述智能处理器为芯片。As described above, the intelligent processor is preferably a chip.
本公开实施例还提供一种电器设备,包括:如上所述的智能处理器。An embodiment of the present disclosure also provides an electrical device, including: the intelligent processor as described above.
本公开实施例提供的晶圆、智能处理器及电器设备,通过使第一供电区内的第一焊盘并联,第一供电区内的第二焊盘并联,使得第一供电区内的第一焊盘可以通过基板上一个或数个第一焊球与电源连接,第一供电区的第二焊盘可以通过一个或数个第二焊球接地,使得第一焊球和第二焊球的数量少于第一供电区内的所有焊盘的数量;与第一供电区内的每一焊盘均对应设置一个焊球相比,减少了基板上的焊球数量,进而简化了基板的结构,减小了生产成本。In the wafer, the intelligent processor and the electrical equipment provided by the embodiments of the present disclosure, by connecting the first pads in the first power supply area in parallel and the second pads in the first power supply area in parallel, the first One pad can be connected to the power supply through one or several first solder balls on the substrate, and the second pad of the first power supply area can be grounded through one or several second solder balls, so that the first solder balls and the second solder balls The number is less than the number of all pads in the first power supply area; compared with a solder ball corresponding to each pad in the first power supply area, the number of solder balls on the substrate is reduced, thereby simplifying the substrate The structure reduces the production cost.
附图说明BRIEF DESCRIPTION
一个或多个实施例通过与之对应的附图进行示例性说明,这些示例性说明和附图并不构成对实施例的限定,附图中具有相同参考数字标号的元件示为类似的元件,附图不构成比例限制,并且其中:One or more embodiments are exemplified by the corresponding drawings. These exemplary descriptions and the drawings do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a proportional limitation, and among them:
图1为本实施例提供的智能处理器的结构示意图;1 is a schematic structural diagram of an intelligent processor provided by this embodiment;
图2为本实施例提供的晶圆的结构示意图。FIG. 2 is a schematic structural diagram of a wafer provided by this embodiment.
附图标记说明:Description of reference signs:
10、晶圆;10. Wafer;
20、基板;20. Substrate;
30、封装罩;30. Encapsulation cover;
101、第一供电区;101. The first power supply area;
102、第二供电区;102. The second power supply area;
103、第三供电区;103. The third power supply area;
1011、第一供电区内的第一焊盘;1011, the first pad in the first power supply area;
1012、第一供电区内的第二焊盘;1012. The second pad in the first power supply area;
1021、第二供电区内的第二焊盘;1021, the second pad in the second power supply area;
1022、第二供电区内的第三焊盘;1022, the third pad in the second power supply area;
1031、第三供电区内的第三焊盘;1031, the third pad in the third power supply area;
1032、第三供电区内的第四焊盘。1032. The fourth pad in the third power supply area.
具体实施方式detailed description
为了能够更加详尽地了解本公开实施例的特点与技术内容,下面结合附图对本公开实施例的实现进行详细阐述,所附附图仅供参考说明之用,并非用来限定本公开实施例。在以下的技术描述中,为方便解释起见,通过多个细节以提供对所披露实施例的充分理解。然而,在没有这些细节的情况下,一个或多个实施例仍然可以实施。在其它情况下,为简化附图,熟知的结构和装置可以简化展示。In order to understand the features and technical contents of the embodiments of the present disclosure in more detail, the following describes the implementation of the embodiments of the present disclosure in detail with reference to the drawings. The accompanying drawings are for reference only and are not intended to limit the embodiments of the present disclosure. In the following technical description, for convenience of explanation, various details are provided to provide a sufficient understanding of the disclosed embodiments. However, without these details, one or more embodiments can still be implemented. In other cases, to simplify the drawings, well-known structures and devices can be simplified.
实施例1Example 1
图2为本实施例提供的晶圆的结构示意图。FIG. 2 is a schematic structural diagram of a wafer provided by this embodiment.
请参照图2。本实施例提供一种晶圆10,晶圆10上具有第一供电区101,第一供电区101包括多个第一焊盘和多个第二焊盘;第一供电区内的第一焊盘1011并联,第一供电区内的第二焊盘1012并联,且第一供电区内的第一焊盘1011作为第一供电区101的电源输入端,第一供电区内的第二焊盘1012作为第一供电区的接地端。Please refer to Figure 2. This embodiment provides a wafer 10 having a first power supply area 101 on the wafer 10, the first power supply area 101 includes a plurality of first pads and a plurality of second pads; the first solder in the first power supply area The disks 1011 are connected in parallel, the second pads 1012 in the first power supply area are connected in parallel, and the first pads 1011 in the first power supply area serve as the power input end of the first power supply area 101, and the second pads in the first power supply area 1012 serves as the ground terminal of the first power supply area.
本实施例中第一供电区内的第一焊盘1011和第一供电区内的第二焊盘1012可以为设置在晶圆10上的金属片。In this embodiment, the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area may be metal sheets disposed on the wafer 10.
本实施例中第一供电区内的第一焊盘1011作为电源输入端,可以为第一供电区内的第一焊盘1011与电源连接,以向第一供电区内的第一焊盘1011提供较高的电势。作为接地端的第一供电区内的第二焊盘1012,可以为第一供电区内的第二焊盘1012的电势为零,当然第一供电区内的第二焊盘1012也可以不为零,只要保证第一供电区内的第二焊盘1012具 有一定参考电位,以使第一供电区内的第一焊盘1011和第一供电区内的第二焊盘1012之间具有一定电压即可。In this embodiment, the first pad 1011 in the first power supply area is used as a power input terminal, and the first pad 1011 in the first power supply area can be connected to the power supply to the first pad 1011 in the first power supply area Provide a higher potential. The second pad 1012 in the first power supply area as the ground terminal may be that the potential of the second pad 1012 in the first power supply area is zero, and of course the second pad 1012 in the first power supply area may not be zero , As long as the second pad 1012 in the first power supply area has a certain reference potential, so that there is a certain voltage between the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area can.
如图2所示,本实施例中第一供电区101包括多个第一焊盘和多个第二焊盘,多个第一供电区内的第一焊盘1011排列成相互平行的数个第一竖列,多个第一供电区内的第二焊盘1021排列成相互平行的数个第二竖列,且第一竖列和第二竖列交替设置。在一个实现方式中,各第一供电区内的第一焊盘1011并联可以为每一第一竖列的第一焊盘并联,相应的,第一供电区内的第二焊盘1012并联可以为每一第二竖列的第二焊盘并联。在其他实现方式中,第一供电区内的第一焊盘1011并联可以为所有第一竖列的第一焊盘并联,相应的,第一供电区内的第二焊盘1012并联可以为所有第二竖列的第二焊盘并联。As shown in FIG. 2, in this embodiment, the first power supply area 101 includes a plurality of first pads and a plurality of second pads, and the first pads 1011 in the plurality of first power supply areas are arranged in parallel to each other. In the first vertical column, the second pads 1021 in the plurality of first power supply regions are arranged in parallel to each other, and the first vertical column and the second vertical column are alternately arranged. In an implementation, the first pads 1011 in each first power supply area may be connected in parallel for each first vertical column of the first pad. Correspondingly, the second pads 1012 in the first power supply area may be connected in parallel The second pads of each second vertical column are connected in parallel. In other implementation manners, the parallel connection of the first pads 1011 in the first power supply area may be parallel to all the first vertical pads. Correspondingly, the parallel connection of the second pads 1012 in the first power supply area may be all The second pads of the second vertical column are connected in parallel.
本实施例中,第一供电区内的第一焊盘1011可以通过位于晶圆10上的具有一定图形的第一连接金属层并联,相同地,第一供电区内的第二焊盘1012可以通过晶圆10上具有一定图形的第二连接金属层并联。In this embodiment, the first pad 1011 in the first power supply area may be connected in parallel through the first connection metal layer with a certain pattern on the wafer 10, and similarly, the second pad 1012 in the first power supply area may be The second connecting metal layer with a certain pattern on the wafer 10 is connected in parallel.
本实施例中的晶圆10设置在基板的安装面上,在基板上与安装面相对的贴合面上设置有第一焊球和第二焊球,第一供电区内的第一焊盘1011通过第一焊球与电源连接,第一供电区内的第二焊盘1012通过第二焊球接地。The wafer 10 in this embodiment is provided on the mounting surface of the substrate, and the first solder ball and the second solder ball are provided on the bonding surface of the substrate opposite to the mounting surface, and the first pad in the first power supply area 1011 is connected to the power source through the first solder ball, and the second pad 1012 in the first power supply area is grounded through the second solder ball.
本实施例提供的智能处理器,通过使第一供电区内的第一焊盘1011并联,第一供电区内的第二焊盘1012并联,第一供电区内的第一焊盘1011可以通过基板上一个或数个第一焊球与电源连接,第一供电区的第二焊盘1012可以通过一个或数个第二焊球接地,使得第一焊球和第二焊球的数量少于第一供电区101内的所有焊盘的数量;与第一供电区101内的每一焊盘均对应设置一个焊球相比,减少了基板上的焊球数量,进而简化了基板20的结构,减小了生产成本。In the smart processor provided in this embodiment, by connecting the first pad 1011 in the first power supply area in parallel and the second pad 1012 in the first power supply area in parallel, the first pad 1011 in the first power supply area can pass through One or several first solder balls on the substrate are connected to the power supply, and the second pad 1012 of the first power supply area may be grounded through one or several second solder balls, so that the number of first solder balls and second solder balls is less than The number of all pads in the first power supply area 101; compared with each solder pad in the first power supply area 101, the number of solder balls on the substrate is reduced, thereby simplifying the structure of the substrate 20 , Reducing production costs.
本实施例中,晶圆10上具有与第一供电区101间隔设置的第二供电 区102,第二供电区102包括多个第二焊盘和第三焊盘,第二供电区内的第二焊盘1021并联,第二供电区内的第三焊盘1022并联;且第二供电区内的第二焊盘1021作为第二供电区102的电源输入端,以为第二供电区的内部件供电;第二供电区内的第三焊盘1022作为第二供电区102的接地端。In this embodiment, the wafer 10 has a second power supply area 102 spaced apart from the first power supply area 101. The second power supply area 102 includes a plurality of second pads and a third pad. The two pads 1021 are connected in parallel, and the third pads 1022 in the second power supply area are connected in parallel; and the second pads 1021 in the second power supply area serve as the power input end of the second power supply area 102 to be the internal components of the second power supply area Power supply; the third pad 1022 in the second power supply area serves as the ground terminal of the second power supply area 102.
进一步地,多个第二供电区内的第二焊盘1021排列成相互平行的数个第三竖列,多个第二供电区内的第三焊盘1022排列成相互平行的数个第四竖列,第三竖列和第四竖列交替设置。Further, the second pads 1021 in the plurality of second power supply areas are arranged in parallel third columns, and the third pads 1022 in the second power supply areas are arranged in parallel fourth positions. The vertical column, the third vertical column and the fourth vertical column are alternately arranged.
在一个可实现方式中,各第二供电区内的第二焊盘1021并联可以为每一第三竖列的第二焊盘并联,相应的,第二供电区内的第三焊盘1022并联可以为每一第四竖列的第三焊盘并联。在其他实现方式中,各第二供电区内的第二焊盘1021并联可以为所有第二竖列的第二焊盘并联,相应的,第二供电区内的第三焊盘1022并联可以为所有第二竖列的第三焊盘1022并联。In a possible implementation manner, the second pads 1021 in each second power supply area may be connected in parallel for each second vertical pad, and correspondingly, the third pads 1022 in the second power supply area may be connected in parallel The third pads of each fourth vertical column may be connected in parallel. In other implementation manners, the parallel connection of the second pads 1021 in each second power supply area may be parallel of all second vertical second pads. Correspondingly, the parallel connection of the third pads 1022 in the second power supply area may be All third pads 1022 in the second vertical column are connected in parallel.
本实施例中,第二供电区内的第二焊盘1021可以通过位于晶圆10上的具有一定图形的第三连接金属层并联,相同地,第二供电区内的第三焊盘1022可以通过晶圆10上具有一定图形的第四连接金属层并联。In this embodiment, the second pad 1021 in the second power supply area may be connected in parallel through a third connection metal layer with a certain pattern on the wafer 10, and similarly, the third pad 1022 in the second power supply area may be The fourth connection metal layer with a certain pattern on the wafer 10 is connected in parallel.
进一步地,第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021连接。只需通过第一供电区内的第一焊盘1011和第二供电区内的第二焊盘1022即可向第一供电区101和第二供电区102供电,以进一步减少设置在基板20上的焊球数量。Further, the second pad 1012 in the first power supply area is connected to the second pad 1021 in the second power supply area. Only the first pad 1011 in the first power supply area and the second pad 1022 in the second power supply area can supply power to the first power supply area 101 and the second power supply area 102, so as to further reduce the installation on the substrate 20 Number of solder balls.
本实施例中,晶圆10还包括第三供电区103,第三供电区103与第一供电区101和第二供电区102间隔的设置,第三供电区103包括多个第三焊盘和多个第四焊盘;第三供电区内的第三焊盘1031并联,第三供电区内的第四焊盘1032并联;且第三供电区内的第三焊盘1031作为第三供电区103的电源输入端,以为第三供电区的内部件供电;第三供电区内的第 四焊盘1032作为第三供电区103的接地端。In this embodiment, the wafer 10 further includes a third power supply area 103, which is spaced apart from the first power supply area 101 and the second power supply area 102. The third power supply area 103 includes a plurality of third pads and A plurality of fourth pads; the third pad 1031 in the third power supply area is connected in parallel, and the fourth pad 1032 in the third power supply area is connected in parallel; and the third pad 1031 in the third power supply area serves as the third power supply area The power input terminal of 103 is used to supply power to the internal components of the third power supply area; the fourth pad 1032 in the third power supply area serves as the ground terminal of the third power supply area 103.
进一步地,多个第三供电区内的第三焊盘1031排列成相互平行的数个第五竖列,多个第三供电区内的第四焊盘1032排列成相互平行的数个第六竖列,第五竖列和第六竖列交替设置。Further, the third pads 1031 in the plurality of third power supply areas are arranged in a plurality of fifth vertical columns parallel to each other, and the fourth pads 1032 in the plurality of third power supply areas are arranged in a plurality of parallel sixth numbers. Vertical columns, fifth vertical columns and sixth vertical columns are alternately arranged.
本实施例中,第三供电区内的第三焊盘1031可以通过位于晶圆10上的具有一定图形的第五连接金属层并联,相同地,第三供电区内的第四焊盘1032可以通过晶圆10上具有一定图形的第六连接金属层并联。In this embodiment, the third pad 1031 in the third power supply area may be connected in parallel through the fifth connecting metal layer with a certain pattern on the wafer 10, and similarly, the fourth pad 1032 in the third power supply area may be The sixth connection metal layer with a certain pattern on the wafer 10 is connected in parallel.
进一步地,第三供电区内的第三焊盘1031与第二供电区内的第三焊盘1022连接。只需通过第一供电区内的第一焊盘1011和第三供电区内的第四焊盘1032即可向第一供电区101、第二供电区102供电以及第三供电区103供电,以进一步减少设置在基板20上的焊球数量。Further, the third pad 1031 in the third power supply area is connected to the third pad 1022 in the second power supply area. It is only necessary to supply power to the first power supply area 101, the second power supply area 102, and the third power supply area 103 through the first pad 1011 in the first power supply area and the fourth pad 1032 in the third power supply area, to The number of solder balls provided on the substrate 20 is further reduced.
本实施例中,第一供电区的内部件、第二供电区的内部件和第三供电的区内部件包括多个计算内核。本实施例中计算内核为设置在晶圆10具有一定的逻辑结构,计算内核用于对数据的处理、计算等操作。In this embodiment, the internal components in the first power supply area, the internal components in the second power supply area, and the internal components in the third power supply include multiple computing cores. In this embodiment, the calculation core is provided on the wafer 10 and has a certain logical structure. The calculation core is used for data processing, calculation, and other operations.
本实施例中的晶圆10中还可以具有四个供电区、五个供电区等;相应的,每一供电区内均具有内部件以及与内部件连接的焊盘一个供电区内的一个焊盘作为该供电区的电源输入端与上一供电区的一个焊盘连接,该供电区内的另一个焊盘作为该供电区的接地端与下一供电区内的一个焊盘连接,即各供电区内的内部件串联,使得仅第一供电区内的第一焊盘1011作为电源输入端,同时最后一个供电区内的最后一个焊盘作为接地端,即可实现对所有供电区内的内部件进行供电。The wafer 10 in this embodiment may also have four power supply areas, five power supply areas, etc .; correspondingly, each power supply area has an internal component and a pad connected to the internal component. The disk as the power input end of the power supply area is connected to a pad of the previous power supply area, and the other pad of the power supply area is connected to a pad of the next power supply area as the ground terminal of the power supply area, that is, each The internal components in the power supply area are connected in series, so that only the first pad 1011 in the first power supply area is used as the power input terminal, and the last pad in the last power supply area is used as the ground terminal. The internal parts are powered.
实施例2Example 2
图1为本实施例提供的智能处理器的结构示意图。请参照图1和图2。FIG. 1 is a schematic structural diagram of an intelligent processor provided in this embodiment. Please refer to Figure 1 and Figure 2.
本实施例提供一种智能处理器,包括:基板20以及安装在基板02上的晶圆10;其中晶圆10与上述晶圆10的结构大体相同,在此不再赘述。This embodiment provides an intelligent processor, including: a substrate 20 and a wafer 10 mounted on a substrate 02; wherein the structure of the wafer 10 is substantially the same as that of the above-mentioned wafer 10, which will not be repeated here.
本实施例中,基板20上设置有第一电路,第一供电区内的第二焊盘 1012与第二供电区内的第二焊盘1021通过第一电路连接。通过基板20上的第一电路实现第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021连接,可以避免在晶圆10上设置较多的金属片导致的晶圆10加工困难。In this embodiment, a first circuit is provided on the substrate 20, and the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area are connected by the first circuit. The first circuit on the substrate 20 realizes the connection between the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area, which can avoid crystals caused by placing more metal pieces on the wafer 10 Circle 10 is difficult to process.
进一步地,基板20上还设置有第二电路,第二供电区内的第三焊盘1022与第三供电区内的第三焊盘1031通过第二电路连接。通过基板20上的第二电路实现第二供电区内的第三焊盘1022与第三供电区内的第三焊盘1031之间的连接,可以进一步避免在晶圆10上设置较多的金属片导致的晶圆10加工困难。Further, a second circuit is further provided on the substrate 20, and the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area are connected by a second circuit. The connection between the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be achieved by the second circuit on the substrate 20, which can further avoid placing more metal on the wafer 10 The wafer 10 is difficult to process due to the wafer.
进一步地,第一电路在连接第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021的同时,将所有第一供电区内的第二焊盘1012和所有第二供电区内的第二焊盘1021并联;相同的,第二电路在连接第二供电区内的第三焊盘1022与第三供电区内的第三焊盘1031的同时,将所有第二供电区内的第三焊盘1022和所有第三供电区内的第三焊盘1031并联。Further, the first circuit connects the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area, and connects all the second pads 1012 in the first power supply area and all the first The second pads 1021 in the second power supply area are connected in parallel; similarly, the second circuit connects the third pads 1022 in the second power supply area and the third pads 1031 in the third power supply area The third pads 1022 in the power supply area and the third pads 1031 in all third power supply areas are connected in parallel.
本实施例中,基板20可以包括至少两个金属板以及位于相邻两金属板之间的绝缘板,相应的第一电路和第二电路可以在同一金属板上形成;当然为了避免同一金属板上的电路图形较为复杂,可以使第一电路和第二电路位于不同的金属层上。In this embodiment, the substrate 20 may include at least two metal plates and an insulating plate between two adjacent metal plates, and the corresponding first circuit and second circuit may be formed on the same metal plate; of course, in order to avoid the same metal plate The circuit pattern on the above is relatively complicated, and the first circuit and the second circuit can be located on different metal layers.
示例性的,第一电路和第二电路可以均设置在基板20靠近安装面的金属板上,或者第一电路和第二电路均设置在基板20靠近贴合面的金属板上。当基板20上的金属板多于两个时,第一电路设置在靠近安装面的金属板上,且第二电路设置在靠近安装面的金属板和靠近贴合面的金属板之间的金属板上;或者第一电路设置在靠近贴合面的金属板上,且第二电路设置在靠近安装面的金属板和靠近贴合面的金属板之间的金属板上;或者第二电路设置在靠近安装面的金属板上,且第一电路设置在靠近安装面 的金属板和靠近贴合面的金属板之间的金属板上;或者第二电路设置在靠近贴合面的金属板上,且第一电路设置在靠近安装面的金属板和靠近贴合面的金属板之间的金属板上。当基板20上的金属板多于三个时,第一电路和第二电路可以均设置在靠近安装面的金属板和靠近贴合面的金属板之间,并且第一电路和第二电路位于不同的金属板上。Exemplarily, the first circuit and the second circuit may be both provided on the metal plate of the substrate 20 near the mounting surface, or the first circuit and the second circuit are both provided on the metal plate of the substrate 20 near the bonding surface. When there are more than two metal plates on the substrate 20, the first circuit is provided on the metal plate close to the mounting surface, and the second circuit is provided on the metal between the metal plate close to the mounting surface and the metal plate close to the bonding surface Board; or the first circuit is set on the metal plate near the bonding surface, and the second circuit is set on the metal plate between the metal plate near the mounting surface and the metal plate near the bonding surface; or the second circuit is set On the metal plate close to the mounting surface, and the first circuit is set on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface; or the second circuit is set on the metal plate close to the bonding surface And the first circuit is provided on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface. When there are more than three metal plates on the substrate 20, both the first circuit and the second circuit may be disposed between the metal plate near the mounting surface and the metal plate near the bonding surface, and the first circuit and the second circuit are located Different metal plates.
本实施例中的第一电路和第二电路为对金属板进行图形化后形成的具有一定图形的金属板。当第一电路位于靠近安装面的金属板上时,第一供电区内的第二焊盘1012和第二供电区内的第二焊盘1021可以直接与第一电路连接,当第一电路位于其他的金属板上时,第一供电区内的第二焊盘1012和第二供电区内的第二焊盘1021可以通过过孔与第一电路连接;相同的,当第二电路位于靠近安装面的金属板上时,第二供电区内的第三焊盘1022和第三供电区内的第三焊盘1031可以直接与第二电路连接,当第二电路位于其他的金属板上时,第二供电区内的第三焊盘1022和第三供电区内的第三焊盘1031可以通过过孔与第二电路连接。The first circuit and the second circuit in this embodiment are metal plates with certain patterns formed by patterning the metal plates. When the first circuit is located on the metal plate close to the mounting surface, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be directly connected to the first circuit when the first circuit is located On other metal plates, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be connected to the first circuit through the via; similarly, when the second circuit is located close to the installation On the metal plate on the surface, the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be directly connected to the second circuit. When the second circuit is located on another metal plate, The third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area may be connected to the second circuit through a via.
本实施例中,智能处理器还包括封装罩30,晶圆10设置在基板20的安装面上,封装罩30罩设在晶圆10上,且与安装面连接。封装罩30可以对晶圆10进行密封,同时封装罩30也可以对晶圆10进行保护,以免外界物体与晶圆10接触造成晶圆10的损坏。In this embodiment, the intelligent processor further includes a packaging cover 30, the wafer 10 is disposed on the mounting surface of the substrate 20, the packaging cover 30 is disposed on the wafer 10, and is connected to the mounting surface. The encapsulation cover 30 can seal the wafer 10, and at the same time, the encapsulation cover 30 can also protect the wafer 10 to prevent damage to the wafer 10 caused by contact of external objects with the wafer 10.
进一步地,封装罩30为塑料罩或陶瓷罩或金属罩。Further, the package cover 30 is a plastic cover, a ceramic cover or a metal cover.
本实施例中的智能处理器为芯片。The intelligent processor in this embodiment is a chip.
在其他实施例中,还提供一种电器设备,包括:如上所述的智能处理器。In other embodiments, an electrical device is also provided, including: the intelligent processor as described above.
当用于本申请中时,虽然术语“第一”、“第二”等可能会在本申请中使用以描述各元件,但这些元件不应受到这些术语的限制。这些术语仅用于将一个元件与另一个元件区别开。比如,在不改变描述的含义的情况下,第一元件可以叫做第二元件,并且同样第,第二元件可以叫做第一元件,只要所 有出现的“第一元件”一致重命名并且所有出现的“第二元件”一致重命名即可。第一元件和第二元件都是元件,但可以不是相同的元件。When used in this application, although the terms "first", "second", etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without changing the meaning of the description, the first element can be called the second element, and likewise, the second element can be called the first element, as long as all occurrences of the "first element" are consistently renamed and all occurrences of The "second component" can be renamed consistently. The first element and the second element are both elements, but they may not be the same element.
另外,上述技术描述中使用术语以提供所描述的实施例的透彻理解。然而,并不需要过于详细的细节以实现所描述的实施例。因此,实施例的上述描述是为了阐释和描述而呈现的。上述描述中所呈现的实施例以及根据这些实施例所公开的例子是单独提供的,以添加上下文并有助于理解所描述的实施例。上述说明书不用于做到无遗漏或将所描述的实施例限制到本公开的精确形式。根据上述教导,若干修改、选择适用以及变化是可行的。在某些情况下,没有详细描述为人所熟知的处理步骤以避免不必要地影响所描述的实施例。In addition, terminology is used in the above technical description to provide a thorough understanding of the described embodiments. However, no excessively detailed details are required to implement the described embodiments. Therefore, the above description of the embodiments is presented for explanation and description. The embodiments presented in the above description and the examples disclosed according to these embodiments are provided separately to add context and help to understand the described embodiments. The above description is not intended to be without omission or to limit the described embodiments to the precise form of this disclosure. Based on the above teachings, several modifications, choices and changes are possible. In some cases, well-known processing steps are not described in detail to avoid unnecessarily affecting the described embodiments.

Claims (18)

  1. 一种晶圆,其特征在于,所述晶圆上具有第一供电区,所述第一供电区包括多个第一焊盘和多个第二焊盘;所述第一供电区内的第一焊盘并联,所述第一供电区内的第二焊盘并联,且所述第一供电区内的第一焊盘作为第一供电区的电源输入端,以为所述第一供电区的内部件供电;所述第一供电区内的第二焊盘作为第一供电区的接地端。A wafer, characterized in that the wafer has a first power supply area, the first power supply area includes a plurality of first pads and a plurality of second pads; One pad is connected in parallel, the second pad in the first power supply area is connected in parallel, and the first pad in the first power supply area is used as the power input end of the first power supply area to The internal components supply power; the second pad in the first power supply area serves as the grounding terminal of the first power supply area.
  2. 根据权利要求1所述的晶圆,其特征在于,所述晶圆上具有与所述第一供电区间隔设置的第二供电区,所述第二供电区包括多个第二焊盘和第三焊盘,所述第二供电区内的第二焊盘并联,所述第二供电区内的第三焊盘并联;且所述第二供电区内的第二焊盘作为第二供电区的电源输入端,以为所述第二供电区的内部件供电;所述第二供电区内的第三焊盘作为所述第二供电区的接地端。The wafer according to claim 1, wherein the wafer has a second power supply area spaced apart from the first power supply area, and the second power supply area includes a plurality of second pads and first Three pads, the second pad in the second power supply area is connected in parallel, and the third pad in the second power supply area is connected in parallel; and the second pad in the second power supply area is used as the second power supply area The power input terminal of the power supply for powering the internal components of the second power supply area; the third pad in the second power supply area serves as the ground terminal of the second power supply area.
  3. 根据权利要求2所述的晶圆,其特征在于,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接。The wafer according to claim 2, wherein the second pad in the first power supply area is connected to the second pad in the second power supply area.
  4. 根据权利要求3所述的晶圆,其特征在于,所述晶圆还包括第三供电区,所述第三供电区与所述第一供电区和所述第二供电区间隔的设置,所述第三供电区包括多个第三焊盘和多个第四焊盘;The wafer according to claim 3, wherein the wafer further comprises a third power supply area, and the third power supply area is arranged at a distance from the first power supply area and the second power supply area, so The third power supply area includes a plurality of third pads and a plurality of fourth pads;
    所述第三供电区内的第三焊盘并联,所述第三供电区内的第四焊盘并联;且所述第三供电区内的第三焊盘作为第三供电区的电源输入端,以为所述第三供电区的内部件供电;所述第三供电区内的第四焊盘作为第三供电区的接地端。The third pads in the third power supply area are connected in parallel, and the fourth pads in the third power supply area are connected in parallel; and the third pad in the third power supply area serves as the power input end of the third power supply area To supply power to the internal components of the third power supply area; the fourth pad in the third power supply area serves as the ground terminal of the third power supply area.
  5. 根据权利要求4所述的晶圆,其特征在于,所述第三供电区内的第三焊盘与所述第二供电区内的第三焊盘连接。The wafer according to claim 4, wherein the third pad in the third power supply area is connected to the third pad in the second power supply area.
  6. 根据权利要求4所述的晶圆,其特征在于,所述第一供电区、第二供电区和第三供电区的内部件包括多个计算内核。The wafer according to claim 4, wherein the internal components of the first power supply area, the second power supply area, and the third power supply area include a plurality of computing cores.
  7. 一种智能处理器,其特征在于,包括:基板以及安装在所述基板上的晶圆;An intelligent processor, comprising: a substrate and a wafer mounted on the substrate;
    所述晶圆上具有第一供电区,所述第一供电区包括多个第一焊盘和多个第二焊盘;所述第一供电区内的第一焊盘并联,所述第一供电区内的第二焊盘并联,且所述第一供电区内的第一焊盘作为第一供电区的电源输入端,以为所述第一供电区的内部件供电;所述第一供电区内的第二焊盘作为第一供电区的接地端。The wafer has a first power supply area, the first power supply area includes a plurality of first pads and a plurality of second pads; the first pads in the first power supply area are connected in parallel, the first The second pads in the power supply area are connected in parallel, and the first pads in the first power supply area are used as the power input end of the first power supply area to supply power to the internal components of the first power supply area; The second pad in the area serves as the ground terminal of the first power supply area.
  8. 根据权利要求7所述的智能处理器,其特征在于,所述晶圆上具有与所述第一供电区间隔设置的第二供电区,所述第二供电区包括多个第二焊盘和第三焊盘,所述第二供电区内的第二焊盘并联,所述第二供电区内的第三焊盘并联;且所述第二供电区内的第二焊盘作为第二供电区的电源输入端,以为所述第二供电区的内部件供电;所述第二供电区内的第三焊盘作为所述第二供电区的接地端。The intelligent processor according to claim 7, wherein the wafer has a second power supply area spaced apart from the first power supply area, the second power supply area includes a plurality of second pads and A third pad, the second pad in the second power supply area is connected in parallel, and the third pad in the second power supply area is connected in parallel; and the second pad in the second power supply area is used as the second power supply A power input terminal of the power supply area to supply power to internal components of the second power supply area; and a third pad in the second power supply area serves as a ground terminal of the second power supply area.
  9. 根据权利要求8所述的智能处理器,其特征在于,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接。The intelligent processor according to claim 8, wherein the second pad in the first power supply area is connected to the second pad in the second power supply area.
  10. 根据权利要求9所述的智能处理器,其特征在于,所述晶圆还包括第三供电区,所述第三供电区与所述第一供电区和所述第二供电区间隔的设置,所述第三供电区包括多个第三焊盘和多个第四焊盘;The intelligent processor according to claim 9, wherein the wafer further includes a third power supply area, and the third power supply area is spaced apart from the first power supply area and the second power supply area, The third power supply area includes a plurality of third pads and a plurality of fourth pads;
    所述第三供电区内的第三焊盘并联,所述第三供电区内的第四焊盘并联;且所述第三供电区内的第三焊盘作为第三供电区的电源输入端,以为所述第三供电区的内部件供电;所述第三供电区内的第四焊盘作为第三供电区的接地端。The third pads in the third power supply area are connected in parallel, and the fourth pads in the third power supply area are connected in parallel; and the third pad in the third power supply area serves as the power input end of the third power supply area To supply power to the internal components of the third power supply area; the fourth pad in the third power supply area serves as the ground terminal of the third power supply area.
  11. 根据权利要求10所述的智能处理器,其特征在于,所述第三供电区内的第三焊盘与所述第二供电区内的第三焊盘连接。The intelligent processor according to claim 10, wherein the third pad in the third power supply area is connected to the third pad in the second power supply area.
  12. 根据权利要求10所述的智能处理器,其特征在于,所述第一供电区、第二供电区和第三供电区的内部件包括多个计算内核。The intelligent processor of claim 10, wherein the internal components of the first power supply area, the second power supply area, and the third power supply area include multiple computing cores.
  13. 根据权利要求9-11任一项所述的智能处理器,其特征在于,所述基板上设置有第一电路,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘通过所述第一电路连接。The intelligent processor according to any one of claims 9 to 11, wherein a first circuit is provided on the substrate, the second pad in the first power supply area and the second power supply area The second pad is connected through the first circuit.
  14. 根据权利要求11所述的智能处理器,其特征在于,所述基板上还设置有第二电路,所述第二供电区内的第三焊盘与所述第三供电区内的第三焊盘通过所述第二电路连接。The intelligent processor according to claim 11, wherein a second circuit is further provided on the substrate, the third pad in the second power supply area and the third solder in the third power supply area The disk is connected through the second circuit.
  15. 根据权利要求7所述的智能处理器,其特征在于,所述智能处理器还包括封装罩,所述晶圆设置在所述基板的安装面上,所述封装罩罩设置在所述晶圆上,且与所述安装面连接。The intelligent processor according to claim 7, wherein the intelligent processor further comprises a packaging cover, the wafer is provided on a mounting surface of the substrate, and the packaging cover is provided on the wafer And connected to the mounting surface.
  16. 根据权利要求15所述的智能处理器,其特征在于,所述封装罩为塑料罩或陶瓷罩或金属罩。The intelligent processor according to claim 15, wherein the packaging cover is a plastic cover, a ceramic cover or a metal cover.
  17. 根据权利要求7所述的智能处理器,其特征在于,所述智能处理器为芯片。The intelligent processor according to claim 7, wherein the intelligent processor is a chip.
  18. 一种电器设备,其特征在于,包括:权利要求7-15任一项所述的智能处理器。An electric appliance, characterized by comprising: the intelligent processor according to any one of claims 7-15.
PCT/CN2018/114356 2018-11-07 2018-11-07 Wafer, intelligent processor and electrical equipment WO2020093266A1 (en)

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Citations (4)

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CN1754259A (en) * 2003-02-26 2006-03-29 三洋电机株式会社 Semiconductor integrated circuit device and its power supply wiring method
CN102891146A (en) * 2011-07-22 2013-01-23 瑞萨电子株式会社 Semiconductor device
US8659144B1 (en) * 2011-12-15 2014-02-25 Marvell International Ltd. Power and ground planes in package substrate
WO2017203607A1 (en) * 2016-05-24 2017-11-30 株式会社野田スクリーン Intermediate connector, semiconductor device equipped with intermediate connector, and method for manufacturing intermediate connector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1754259A (en) * 2003-02-26 2006-03-29 三洋电机株式会社 Semiconductor integrated circuit device and its power supply wiring method
CN102891146A (en) * 2011-07-22 2013-01-23 瑞萨电子株式会社 Semiconductor device
US8659144B1 (en) * 2011-12-15 2014-02-25 Marvell International Ltd. Power and ground planes in package substrate
WO2017203607A1 (en) * 2016-05-24 2017-11-30 株式会社野田スクリーン Intermediate connector, semiconductor device equipped with intermediate connector, and method for manufacturing intermediate connector

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