WO2020093265A1 - Wafer, smart processor, and electrical device - Google Patents

Wafer, smart processor, and electrical device Download PDF

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Publication number
WO2020093265A1
WO2020093265A1 PCT/CN2018/114351 CN2018114351W WO2020093265A1 WO 2020093265 A1 WO2020093265 A1 WO 2020093265A1 CN 2018114351 W CN2018114351 W CN 2018114351W WO 2020093265 A1 WO2020093265 A1 WO 2020093265A1
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WO
WIPO (PCT)
Prior art keywords
power supply
supply area
pad
pads
wafer
Prior art date
Application number
PCT/CN2018/114351
Other languages
French (fr)
Chinese (zh)
Inventor
杨帅
郭函
Original Assignee
北京比特大陆科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京比特大陆科技有限公司 filed Critical 北京比特大陆科技有限公司
Priority to PCT/CN2018/114351 priority Critical patent/WO2020093265A1/en
Publication of WO2020093265A1 publication Critical patent/WO2020093265A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • This application relates to the field of electrical equipment, for example, to a wafer, intelligent processor and electrical equipment.
  • the electrical equipment has a circuit board and an intelligent processor installed on the circuit board.
  • the intelligent processor is electrically connected to the circuit on the circuit board.
  • an intelligent processor includes a wafer and a substrate.
  • the wafer has a first power supply area and a second power supply area spaced apart.
  • Each of the first power supply area and the second power supply area has a plurality of pads, and each A pad is electrically connected to a solder ball on the substrate; the substrate is connected to the circuit board, and the solder ball on the substrate is electrically connected to the circuit on the circuit board to realize the connection between the intelligent processor and the circuit board.
  • An embodiment of the present disclosure provides a wafer having a first power supply area and a second power supply area spaced apart, the first power supply area includes a first pad and a second pad, the first The second power supply area includes a second pad and a third pad.
  • the first pad in the first power supply area serves as a power input terminal to supply power to the internal components of the first power supply area. Is connected to the second pad in the second power supply area, and the third pad in the second power supply area serves as the ground terminal of the second power supply area; the first power supply area Of the first pad is greater than the potential of the second pad in the first power supply area, and the potential of the second pad in the second power supply area is greater than the third pad in the second power supply area Electric potential.
  • the wafer further includes a third power supply area, the third power supply area includes a third pad and a fourth pad, and the third pad in the third power supply area It is connected to the third pad in the second power supply area, the fourth pad in the third power supply area serves as a ground terminal, and the potential of the third pad in the third power supply area is greater than that of the third power supply The potential of the fourth pad in the area.
  • the second power supply area is provided between the first power supply area and the third power supply area.
  • the first power supply area includes at least a plurality of first pads and second pads, and the first pads in the plurality of first power supply areas are arranged parallel to each other A plurality of first vertical columns, and the second pads in the plurality of first power supply areas are arranged into a plurality of second vertical columns parallel to each other.
  • the first vertical columns and the second vertical columns are alternately arranged.
  • the second power supply area includes at least a plurality of second pads and third pads, and the second pads in the plurality of second power supply areas are arranged parallel to each other A plurality of third vertical columns, a plurality of third pads in the second power supply area are arranged into a plurality of parallel fourth vertical columns, and the third vertical columns and the fourth vertical columns are alternately arranged And each of the third vertical columns and one of the second vertical columns are arranged collinearly.
  • the wafer further includes a third power supply area, the third power supply area includes a plurality of third pads and a plurality of fourth pads; a plurality of the third power supply areas
  • the third pads in the array are arranged in a plurality of fifth vertical columns parallel to each other, and the fourth pads in the plurality of third power supply areas are arranged in a plurality of sixth vertical columns parallel to each other, the fifth vertical columns It is alternately arranged with the sixth vertical column, and each fifth vertical column is arranged collinearly with one fourth vertical column.
  • the internal components in the first power supply area, the internal components in the second power supply area, and the internal components in the third power supply include multiple computing cores.
  • the second pad in the first power supply area serves as the ground terminal of the first power supply area
  • the second pad in the second power supply area serves as the second Power input of the power supply area
  • the third pad in the second power supply area serves as the ground terminal of the second power supply area
  • the third pad in the third power supply area serves as the third Power input of the power supply area
  • An embodiment of the present disclosure also provides an intelligent processor, including a wafer, with a first power supply area and a second power supply area spaced apart on the wafer, the first power supply area including a first pad and a second solder Plate, the second power supply area includes a second pad and a third pad, and the first pad in the first power supply area serves as a power input terminal to supply power to the internal components of the first power supply area, the The second pad in the first power supply area is connected to the second pad in the second power supply area, and the third pad in the second power supply area serves as the ground terminal of the second power supply area; The potential of the first pad in the first power supply area is greater than the potential of the second pad in the first power supply area, and the potential of the second pad in the second power supply area is greater than the second power supply area The potential of the third pad.
  • the wafer further includes a third power supply area, the third power supply area includes a third pad and a fourth pad, and the third solder in the third power supply area
  • the disk is connected to the third pad in the second power supply area, the fourth pad in the third power supply area serves as a ground terminal, and the potential of the third pad in the third power supply area is greater than the three The potential of the fourth pad in the power supply area.
  • the second power supply area is provided between the first power supply area and the third power supply area.
  • the first power supply area includes at least a plurality of first pads and second pads, and the plurality of first pads in the first power supply area are arranged to be mutually A plurality of parallel first vertical columns, and the second pads in the plurality of first power supply areas are arranged into a plurality of parallel second vertical columns.
  • the first vertical column and the second vertical column are alternately arranged.
  • the second power supply area includes at least a plurality of second pads and third pads, and the second pads of the plurality of second power supply areas are arranged to be mutually Parallel third vertical columns, the third pads in the plurality of second power supply areas are arranged into parallel fourth vertical columns, and the third vertical columns and the fourth vertical columns alternate And each of the third vertical columns and one of the second vertical columns are arranged collinearly.
  • the wafer further includes a third power supply area, and the third power supply area includes a plurality of third pads and a plurality of fourth pads; a plurality of the third power supplies
  • the third pads in the area are arranged in parallel fifth vertical columns, and the fourth pads in the third power supply areas are arranged in parallel sixth vertical columns, and the fifth vertical columns
  • the columns and the sixth vertical columns are alternately arranged, and each of the fifth vertical columns is arranged collinearly with one of the fourth vertical columns.
  • the internal components of the first power supply area, the internal components of the second power supply area, and the internal components of the third power supply area include multiple computing cores.
  • the second pad in the first power supply area serves as the ground terminal of the first power supply area
  • the second pad in the second power supply area serves as the first The power input terminal of the power supply area
  • the third pad in the second power supply area serves as the ground terminal of the second power supply area
  • the third pad in the third power supply area serves as the first Three power input terminals in the power supply area.
  • the intelligent processor further includes a substrate, the wafer is disposed on the substrate; the substrate is further provided with a first circuit, and the first power supply area The second pad and the second pad in the second power supply area are connected through the first circuit.
  • a second circuit is further provided on the substrate, and the third pad in the second power supply area and the third pad in the third power supply area pass through the Second circuit connection.
  • the intelligent processor further includes a packaging cover, the wafer is provided on a mounting surface of the substrate, the packaging cover is provided on the wafer, and the The mounting surface is connected.
  • the packaging cover is a plastic cover, a ceramic cover or a metal cover.
  • the intelligent processor is preferably a chip.
  • An embodiment of the present disclosure also provides an electrical device, including: the intelligent processor as described above.
  • the intelligent processor and the electrical equipment provided by the embodiments of the present disclosure, by using the first pad located in the first power supply area as a power input terminal, the second pad in the first power supply area and the second power supply area
  • the second pad in the connection is connected, the third pad in the second power supply area is used as the ground terminal; only the first pad in the first power supply area is used as the power input terminal, and the second pad in the second power supply area
  • the third pad is used as a ground terminal to supply power to the wafer; compared with all the pads on the wafer in the prior art and the solder ball connection on the substrate used to mount the wafer, the connection with the substrate is reduced
  • the number of pads connected to the solder balls on the substrate can further reduce the number of solder balls on the substrate, thereby simplifying the structure of the substrate and reducing production costs.
  • FIG. 1 is a schematic structural diagram of an intelligent processor provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram 1 of a wafer provided by an embodiment of the present disclosure
  • FIG. 3 is a second schematic structural diagram of a wafer provided by an embodiment of the present disclosure.
  • the first power supply area
  • FIG. 2 is a first schematic structural view of a wafer provided by an embodiment of the present disclosure
  • FIG. 3 is a second structural schematic view of a wafer provided by an embodiment of the present disclosure.
  • This embodiment provides a wafer 10 having a first power supply area 101 and a second power supply area 102 spaced apart.
  • the first power supply area 101 includes a first pad and a second pad
  • a second power supply area 102 includes a second pad and a third pad.
  • the first pad 1011 in the first power supply area serves as a power input terminal to supply power to the internal components in the first power supply area.
  • the second pad 1012 in the first power supply area is The second pad 1021 in the second power supply area is connected, and the third pad 1022 in the second power supply area serves as the ground terminal of the second power supply area 102; the potential of the first pad 1011 in the first power supply area is greater than the first The potential of the second pad 1012 in the power supply area, the potential of the second pad 1021 in the second power supply area is greater than the potential of the third pad 1022 in the second power supply area.
  • the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area may be metal sheets disposed on the wafer 10, and the same, the second pad in the second power supply area
  • the pad 1021 and the third pad 1022 in the second power supply area are also metal sheets provided on the wafer 10.
  • the first pad 1011 in the first power supply area is used as a power input terminal, and the first pad 1011 in the first power supply area can be connected to the power supply to the first pad 1011 in the first power supply area Provide a higher potential.
  • connection between the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area is an electrical connection.
  • a first copper sheet with a certain pattern is provided on the wafer 10, and the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area pass through the first Copper connection.
  • the third pad 1022 in the second power supply area serves as the ground terminal of the second power supply area 102, wherein the potential of the third pad 1022 in the second power supply area may be zero, or the The electric potential of the third pad 1022 is not zero, as long as the third pad 1022 in the second power supply area has a reference potential to ensure that the first pad 1011 in the first power supply area and the third in the second power supply area A certain voltage is required between the pads 1022, so that the wafer 10 can work normally.
  • the second pad 1012 in the first power supply area serves as the ground terminal of the first power supply area 101
  • the second pad 1021 in the second power supply area serves as the power input terminal of the second power supply area 102.
  • the internal components in the first power supply area are connected to the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area;
  • the second pad 1021 in the second power supply area is connected to the third pad 1022 in the second power supply area.
  • the potential of the first pad 1011 in the first power supply area is greater than the potential of the second pad 1012 in the first power supply area, and the potential of the second pad 1021 in the second power supply area is greater than the potential of the second power supply area.
  • the electric potential of the three pads 1022 makes the internal components of the first power supply area and the internal components of the second power supply area share a part of the voltage.
  • the divided voltages of the internal components of the first power supply area and the internal components of the second power supply area may be equal, that is, between the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area The voltage between them is equal to the voltage between the second pad 1021 in the second power supply area and the third pad 1022 in the second power supply area.
  • the wafer 10 by using the first pad 1011 located in the first power supply area as a power input terminal, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area Connection, the third pad 1022 in the second power supply area serves as a ground terminal; only the first pad 1011 in the first power supply area serves as the power input terminal, and the third pad 1022 in the second power supply area As a ground terminal, the wafer 10 can be powered; compared with all the pads on the wafer in the prior art and the solder ball connection on the substrate for mounting the wafer, the soldering on the substrate is reduced The number of pads connected by the ball can further reduce the number of solder balls on the substrate, thereby simplifying the structure of the substrate and reducing the production cost.
  • the wafer 10 further includes a third power supply area 103.
  • the third power supply area 103 includes a third pad and a fourth pad.
  • the third pad 1031 in the third power supply area and the second power supply area The third pad 1022 is connected, and the fourth pad 1032 in the third power supply area serves as a ground terminal.
  • the potential of the third pad 1031 in the third power supply area is greater than the potential of the fourth pad 1032 in the third power supply area.
  • the third pad 1031 in the third power supply area is connected to the third pad 1022 in the second power supply area, and the fourth pad 1032 in the third power supply area serves as a ground terminal, which can be The number of solder balls on the substrate of the wafer 10 in the power supply area to further simplify the structure of the substrate.
  • a first copper sheet and a second copper sheet with a certain pattern are provided on the wafer 10, the second pad 1012 in the first power supply area and the second solder in the second power supply area
  • the disk 1021 is connected by a first copper sheet; the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area are connected by a second copper plate.
  • the second pad 1012 in the first power supply area serves as the ground terminal of the first power supply area 101
  • the second pad 1021 in the second power supply area serves as the power input terminal of the second power supply area 102
  • the third pad 1022 in the second power supply area serves as a ground terminal of the second power supply area 102
  • the third pad 1031 in the third power supply area serves as a power input terminal of the third power supply area 103.
  • the divided voltages of the internal components of the first power supply area, the internal components of the second power supply area, and the internal components of the third power supply area are equal.
  • the internal components in the first power supply area, the internal components in the second power supply area, and the internal components in the third power supply include multiple computing cores.
  • the calculation core is provided on the wafer 10 and has a certain logical structure. The calculation core is used for data processing, calculation, and other operations.
  • the wafer 10 in this embodiment may also have four power supply areas, five power supply areas, etc .; correspondingly, each power supply area has internal components and pads connected to the internal components, one A pad in the power supply area is connected to a pad of the previous power supply area as a power input terminal of the power supply area, and another pad in the power supply area is used as a ground terminal of the power supply area and a pad of the next power supply area Pad connection, that is, the internal components in each power supply area are connected in series, so that only the first pad 1011 in the first power supply area is used as the power input terminal, and the last pad in the last power supply area is used as the ground terminal. Supply power to all internal components in the power supply area.
  • the second power supply area 102 is disposed between the first power supply area 101 and the third power supply area 103.
  • the second power supply area 102 is provided between the third power supply area 103 and the first power supply area 101, which can reduce the gap between the second pad 1021 in the second power supply area and the second pad 1012 in the first power supply area Distance, and the distance between the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be reduced.
  • At least a plurality of first pads and second pads included in the first power supply area 101 are arranged, and the first pads 1011 in the plurality of first power supply areas are arranged in parallel first vertical columns.
  • the second pads 1021 in the plurality of first power supply areas are arranged in parallel second columns.
  • the first vertical column and the second vertical column are alternately arranged.
  • the second power supply area 102 includes a plurality of second pads and a plurality of third pads.
  • the second pads 1021 in the plurality of second power supply areas are arranged in parallel third vertical columns, and the plurality of second power supplies
  • the third pads 1022 in the area are arranged in several fourth vertical columns parallel to each other, and the third vertical columns and the fourth vertical columns are alternately arranged, and each third vertical column and one second vertical column are arranged collinearly.
  • the first pads of the first vertical column are connected in parallel, the second pads of the second vertical column are connected in parallel, the second pads of the third vertical column are connected in parallel, and the third pads of the fourth vertical column are connected in parallel ;
  • the first pad of the first vertical column is connected to the power supply, the second pad of the second vertical column is connected to the second pad of the third vertical column, and the third pad of the fourth vertical column is grounded.
  • all the first pads located in the first power supply area 101 are connected in parallel
  • all the second pads located in the first power supply area 101 are connected in parallel
  • all the second pads located in the second power supply area 102 are connected in parallel, located at All third pads in the second power supply area 102 are connected in parallel.
  • the wafer 10 further includes a third power supply area 103, and the third power supply area 103 includes a plurality of third pads and a plurality of fourth pads; the third pads 1031 in the plurality of third power supply areas are arranged to be mutually Parallel fifth vertical columns, the fourth pads 1032 in the multiple third power supply areas are arranged into parallel sixth vertical columns, the fifth vertical columns and the sixth vertical columns are alternately arranged, and each Five vertical columns are arranged in line with a fourth vertical column.
  • the first pads of the first vertical column are connected in parallel, the second pads of the second vertical column are connected in parallel, the second pads of the third vertical column are connected in parallel, and the fourth vertical columns are The third pads are connected in parallel, the third pads in the fifth column are connected in parallel, and the fourth pads in the sixth column are connected in parallel; and the first pads in the first column are connected to the power supply, and the second pads in the second column are soldered
  • the disk is connected to the second pad of the third vertical column, the third pad of the fourth vertical column is connected to the third pad of the fifth vertical column, and the fourth pad of the sixth vertical column is grounded.
  • all first pads located in the first power supply area 101 are connected in parallel, all second pads located in the first power supply area 101 are connected in parallel, and all second pads located in the second power supply area 102 are connected in parallel, located in the first All third pads in the second power supply area 102 are connected in parallel, all third pads in the third power supply area 103 are connected in parallel, and all fourth pads in the third power supply area 103 are connected in parallel.
  • FIG. 1 is a schematic structural diagram of an intelligent processor provided by an embodiment of the present disclosure. Please refer to FIGS. 1-3.
  • This embodiment provides an intelligent processor, including the wafer 10 as described above.
  • the structure of the wafer 10 is substantially the same as that of the above-mentioned wafer 10, which will not be repeated here.
  • the smart processor provided in this embodiment further includes a substrate 20 on which the wafer is disposed; the substrate 20 is also provided with a first circuit, a second pad 1012 in the first power supply area and a second The two pads 1021 are connected through the first circuit.
  • the second pad 1012 in the first power supply area is connected to the second pad 1021 in the second power supply area through the first circuit on the substrate 20, which can be avoided compared with the first copper sheet provided on the wafer It is difficult to process the wafer 10 due to the large number of metal pieces placed on the wafer 10.
  • a second circuit is further provided on the substrate 20, and the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area are connected by a second circuit.
  • the connection between the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be achieved by the second circuit on the substrate 20, which can further avoid placing more metal on the wafer 10
  • the wafer 10 is difficult to process due to the wafer.
  • the wafer 10 is mounted on the mounting surface of the substrate 20, and a corresponding soldering surface on the substrate 20 opposite to the mounting surface is provided with a first solder ball and a second solder ball, the first solder ball and the first power supply
  • the first pad 1011 in the area is connected
  • the second solder ball is connected to the fourth pad 1032 in the third power supply area
  • the first solder ball is connected to the power supply
  • the second solder ball is grounded to power the wafer 10.
  • the substrate 20 may include at least two metal plates and an insulating plate between two adjacent metal plates, and the corresponding first circuit and second circuit may be formed on the same metal plate; of course, in order to avoid the same metal plate
  • the circuit pattern is relatively complicated, and the first circuit and the second circuit can be located on different metal layers.
  • the first circuit and the second circuit may be both provided on the metal plate of the substrate 20 near the mounting surface, or the first circuit and the second circuit are both provided on the metal plate of the substrate 20 near the bonding surface .
  • the first circuit and the second circuit may be disposed on different metal plates between the metal plate near the mounting surface and the metal plate near the bonding surface; or the first circuit It is set on the metal plate close to the mounting surface, and the second circuit is set on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface; or the first circuit is set on the metal plate close to the bonding surface
  • the second circuit is set on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface; or the second circuit is set on the metal plate close to the mounting surface and the first circuit is set close to The metal plate between the metal plate on the mounting surface and the metal plate close to the bonding surface; or the second circuit is set on the metal plate near the bonding surface
  • the first circuit and the second circuit in this embodiment are metal plates with certain patterns formed by patterning the metal plates.
  • the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be directly connected to the first circuit when the first circuit is located On other metal plates, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be connected to the first circuit through the via; similarly, when the second circuit is located close to the installation On the metal plate on the surface, the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be directly connected to the second circuit.
  • the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area may be connected to the second circuit through a via.
  • the intelligent processor further includes a packaging cover 30, the wafer 10 is disposed on the mounting surface of the substrate 20, the packaging cover 30 is disposed on the wafer 10, and is connected to the mounting surface.
  • the encapsulation cover 30 can seal the wafer 10, and at the same time, the encapsulation cover 30 can also protect the wafer 10 to prevent damage to the wafer 10 caused by contact of external objects with the wafer 10.
  • the package cover 30 is a plastic cover, a ceramic cover or a metal cover.
  • the intelligent processor in this embodiment is a chip.
  • an electrical device including: the intelligent processor as described above.
  • first, second, etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another.
  • the first element can be called the second element, and likewise, the second element can be called the first element, as long as all occurrences of the "first element” are consistently renamed and all occurrences of The “second component” can be renamed consistently.
  • the first element and the second element are both elements, but they may not be the same element.

Abstract

Provided are a wafer (10), a smart processor, and an electrical device; the wafer (10) has a first power supply region (101) and a second power supply region (102) arranged at intervals; the first power supply region (101) comprises a first solder pad (1011) and a second solder pad (1012); the second power supply region (102) comprises a second solder pad (1021) and a third solder pad (1022); the first solder pad (1011) in the first power supply region (101) is used as a power input terminal; the second solder pad (1012) in the first power supply region (101) is connected to the second solder pad (1021) in the second power supply region (102); the third solder pad (1022) in the second power supply region (102) is used as a ground terminal of the second power supply region (102); it is necessary only to use the first solder pad (1011) in the first power supply region (101) as a power input terminal and use the third solder pad (1022) in the second power supply region (102) as a ground terminal to supply power to the wafer (10); the arrangement described above reduces the number of solder pads connected to solder balls on a substrate (20), thus decreasing the number of solder balls on the substrate (20), simplifying the structure of the substrate and reducing production cost.

Description

晶圆、智能处理器及电器设备Wafers, intelligent processors and electrical equipment 技术领域Technical field
本申请涉及电器设备领域,例如涉及一种晶圆、智能处理器及电器设备。This application relates to the field of electrical equipment, for example, to a wafer, intelligent processor and electrical equipment.
背景技术Background technique
在电器设备内具有电路板以及安装在电路板上的智能处理器,智能处理器与电路板上的电路电连接。The electrical equipment has a circuit board and an intelligent processor installed on the circuit board. The intelligent processor is electrically connected to the circuit on the circuit board.
现有技术中,智能处理器包括晶圆以及基板,晶圆上具有间隔设置的第一供电区和第二供电区,第一供电区和第二供电区内均具有多个焊盘,并且每一焊盘与基板上的一个焊球电连接;基板与电路板连接,且基板上的焊球与电路板上的电路电连接,以实现智能处理器与电路板之间的连接。In the prior art, an intelligent processor includes a wafer and a substrate. The wafer has a first power supply area and a second power supply area spaced apart. Each of the first power supply area and the second power supply area has a plurality of pads, and each A pad is electrically connected to a solder ball on the substrate; the substrate is connected to the circuit board, and the solder ball on the substrate is electrically connected to the circuit on the circuit board to realize the connection between the intelligent processor and the circuit board.
然而,晶圆上的焊盘较多,使得基板上与焊盘连接的焊球较多,导致智能处理器的结构复杂,生产成本高。However, there are more pads on the wafer, which results in more solder balls connected to the pads on the substrate, resulting in a complicated structure of the intelligent processor and high production cost.
发明内容Summary of the invention
本公开实施例提供了一种晶圆,所述晶圆上具有间隔设置的第一供电区以及第二供电区,所述第一供电区包括第一焊盘和第二焊盘,所述第二供电区包括第二焊盘和第三焊盘,所述第一供电区内的第一焊盘作为电源输入端,为所述第一供电区的内部件供电,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接,所述第二供电区内的第三焊盘作为所述第二供电区的接地端;所述第一供电区内的第一焊盘的电势大于所述第一供电区内的第二焊盘的电势,所述第二供电区内的第二焊盘的电势大于所述第二供电区内的第三焊盘的电势。An embodiment of the present disclosure provides a wafer having a first power supply area and a second power supply area spaced apart, the first power supply area includes a first pad and a second pad, the first The second power supply area includes a second pad and a third pad. The first pad in the first power supply area serves as a power input terminal to supply power to the internal components of the first power supply area. Is connected to the second pad in the second power supply area, and the third pad in the second power supply area serves as the ground terminal of the second power supply area; the first power supply area Of the first pad is greater than the potential of the second pad in the first power supply area, and the potential of the second pad in the second power supply area is greater than the third pad in the second power supply area Electric potential.
如上所述的晶圆,优选地,所述晶圆还包括第三供电区,所述第三供电区包括第三焊盘和第四焊盘,所述第三供电区内的第三焊盘与所述第二供电 区内的第三焊盘连接,所述第三供电区内的第四焊盘作为接地端,所述第三供电区内的第三焊盘的电势大于所述三供电区内的第四焊盘的电势。For the wafer as described above, preferably, the wafer further includes a third power supply area, the third power supply area includes a third pad and a fourth pad, and the third pad in the third power supply area It is connected to the third pad in the second power supply area, the fourth pad in the third power supply area serves as a ground terminal, and the potential of the third pad in the third power supply area is greater than that of the third power supply The potential of the fourth pad in the area.
如上所述的晶圆,优选地,所述第二供电区设置在所述第一供电区与所述第三供电区之间。For the wafer as described above, preferably, the second power supply area is provided between the first power supply area and the third power supply area.
如上所述的晶圆,优选地,所述第一供电区包括的第一焊盘和第二焊盘至少为多个,多个所述第一供电区内的第一焊盘排列成相互平行的数个第一竖列,多个所述第一供电区内的第二焊盘排列成相互平行的数个第二竖列。In the wafer as described above, preferably, the first power supply area includes at least a plurality of first pads and second pads, and the first pads in the plurality of first power supply areas are arranged parallel to each other A plurality of first vertical columns, and the second pads in the plurality of first power supply areas are arranged into a plurality of second vertical columns parallel to each other.
如上所述的晶圆,优选地,所述第一竖列和所述第二竖列交替设置。In the wafer as described above, preferably, the first vertical columns and the second vertical columns are alternately arranged.
如上所述的晶圆,优选地,所述第二供电区包括的第二焊盘和第三焊盘至少为多个,多个所述第二供电区内的第二焊盘排列成相互平行的数个第三竖列,多个所述第二供电区内的第三焊盘排列成相互平行的数个第四竖列,且所述第三竖列和所述第四竖列交替设置,且每一所述第三竖列与一个所述第二竖列共线设置。In the wafer as described above, preferably, the second power supply area includes at least a plurality of second pads and third pads, and the second pads in the plurality of second power supply areas are arranged parallel to each other A plurality of third vertical columns, a plurality of third pads in the second power supply area are arranged into a plurality of parallel fourth vertical columns, and the third vertical columns and the fourth vertical columns are alternately arranged And each of the third vertical columns and one of the second vertical columns are arranged collinearly.
如上所述的晶圆,优选地,所述晶圆还包括第三供电区,所述第三供电区包括多个第三焊盘和多个第四焊盘;多个所述第三供电区内的第三焊盘排列成相互平行的数个第五竖列,多个所述第三供电区内的第四焊盘排列成相互平行的数个第六竖列,所述第五竖列和所述第六竖列交替设置,且每一所述第五竖列与一个所述第四竖列共线设置。The wafer as described above, preferably, the wafer further includes a third power supply area, the third power supply area includes a plurality of third pads and a plurality of fourth pads; a plurality of the third power supply areas The third pads in the array are arranged in a plurality of fifth vertical columns parallel to each other, and the fourth pads in the plurality of third power supply areas are arranged in a plurality of sixth vertical columns parallel to each other, the fifth vertical columns It is alternately arranged with the sixth vertical column, and each fifth vertical column is arranged collinearly with one fourth vertical column.
如上所述的晶圆,优选地,所述第一供电区的内部件、第二供电区的内部件和第三供电的区内部件包括多个计算内核。For the wafer as described above, preferably, the internal components in the first power supply area, the internal components in the second power supply area, and the internal components in the third power supply include multiple computing cores.
如上所述的晶圆,优选地,所述第一供电区内的第二焊盘作为所述第一供电区的接地端,所述第二供电区内的第二焊盘作为所述第二供电区的电源输入端。For the wafer as described above, preferably, the second pad in the first power supply area serves as the ground terminal of the first power supply area, and the second pad in the second power supply area serves as the second Power input of the power supply area.
如上所述的晶圆,优选地,所述第二供电区内的第三焊盘作为所述第二供电区的接地端,所述第三供电区内的第三焊盘作为所述第三供电区的电源输入端。In the wafer as described above, preferably, the third pad in the second power supply area serves as the ground terminal of the second power supply area, and the third pad in the third power supply area serves as the third Power input of the power supply area.
本公开实施例还提供一种智能处理器,包括晶圆,所述晶圆上具有间隔设置的第一供电区以及第二供电区,所述第一供电区包括第一焊盘和第二焊盘,所述第二供电区包括第二焊盘和第三焊盘,所述第一供电区内的第一焊盘作为电源输入端,为所述第一供电区的内部件供电,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接,所述第二供电区内的第三焊盘作为所述第二供电区的接地端;所述第一供电区内的第一焊盘的电势大于所述第一供电区内的第二焊盘的电势,所述第二供电区内的第二焊盘的电势大于所述第二供电区内的第三焊盘的电势。An embodiment of the present disclosure also provides an intelligent processor, including a wafer, with a first power supply area and a second power supply area spaced apart on the wafer, the first power supply area including a first pad and a second solder Plate, the second power supply area includes a second pad and a third pad, and the first pad in the first power supply area serves as a power input terminal to supply power to the internal components of the first power supply area, the The second pad in the first power supply area is connected to the second pad in the second power supply area, and the third pad in the second power supply area serves as the ground terminal of the second power supply area; The potential of the first pad in the first power supply area is greater than the potential of the second pad in the first power supply area, and the potential of the second pad in the second power supply area is greater than the second power supply area The potential of the third pad.
如上所述的智能处理器,优选地,所述晶圆还包括第三供电区,所述第三供电区包括第三焊盘和第四焊盘,所述第三供电区内的第三焊盘与所述第二供电区内的第三焊盘连接,所述第三供电区内的第四焊盘作为接地端,所述第三供电区内的第三焊盘的电势大于所述三供电区内的第四焊盘的电势。In the smart processor as described above, preferably, the wafer further includes a third power supply area, the third power supply area includes a third pad and a fourth pad, and the third solder in the third power supply area The disk is connected to the third pad in the second power supply area, the fourth pad in the third power supply area serves as a ground terminal, and the potential of the third pad in the third power supply area is greater than the three The potential of the fourth pad in the power supply area.
如上所述的智能处理器,优选地,所述第二供电区设置在所述第一供电区与所述第三供电区之间。In the smart processor as described above, preferably, the second power supply area is provided between the first power supply area and the third power supply area.
如上所述的智能处理器,优选地,所述第一供电区包括的第一焊盘和第二焊盘至少为多个,多个所述第一供电区内的第一焊盘排列成相互平行的数个第一竖列,多个所述第一供电区内的第二焊盘排列成相互平行的数个第二竖列。In the smart processor as described above, preferably, the first power supply area includes at least a plurality of first pads and second pads, and the plurality of first pads in the first power supply area are arranged to be mutually A plurality of parallel first vertical columns, and the second pads in the plurality of first power supply areas are arranged into a plurality of parallel second vertical columns.
如上所述的智能处理器,优选地,所述第一竖列和所述第二竖列交替设置。In the smart processor as described above, preferably, the first vertical column and the second vertical column are alternately arranged.
如上所述的智能处理器,优选地,所述第二供电区包括的第二焊盘和第三焊盘至少为多个,多个所述第二供电区内的第二焊盘排列成相互平行的数个第三竖列,多个所述第二供电区内的第三焊盘排列成相互平行的数个第四竖列,且所述第三竖列和所述第四竖列交替设置,且每一所述第三竖列与一个所述第二竖列共线设置。In the smart processor as described above, preferably, the second power supply area includes at least a plurality of second pads and third pads, and the second pads of the plurality of second power supply areas are arranged to be mutually Parallel third vertical columns, the third pads in the plurality of second power supply areas are arranged into parallel fourth vertical columns, and the third vertical columns and the fourth vertical columns alternate And each of the third vertical columns and one of the second vertical columns are arranged collinearly.
如上所述的智能处理器,优选地,所述晶圆还包括第三供电区,所述第 三供电区包括多个第三焊盘和多个第四焊盘;多个所述第三供电区内的第三焊盘排列成相互平行的数个第五竖列,多个所述第三供电区内的第四焊盘排列成相互平行的数个第六竖列,所述第五竖列和所述第六竖列交替设置,且每一所述第五竖列与一个所述第四竖列共线设置。In the smart processor as described above, preferably, the wafer further includes a third power supply area, and the third power supply area includes a plurality of third pads and a plurality of fourth pads; a plurality of the third power supplies The third pads in the area are arranged in parallel fifth vertical columns, and the fourth pads in the third power supply areas are arranged in parallel sixth vertical columns, and the fifth vertical columns The columns and the sixth vertical columns are alternately arranged, and each of the fifth vertical columns is arranged collinearly with one of the fourth vertical columns.
如上所述的智能处理器,优选地,所述第一供电区的内部件、第二供电区的内部件和第三供电区的内部件包括多个计算内核。In the smart processor as described above, preferably, the internal components of the first power supply area, the internal components of the second power supply area, and the internal components of the third power supply area include multiple computing cores.
如上所述的智能处理器,优选地,所述第一供电区内的第二焊盘作为所述第一供电区的接地端,所述第二供电区内的第二焊盘作为所述第二供电区的电源输入端。In the smart processor as described above, preferably, the second pad in the first power supply area serves as the ground terminal of the first power supply area, and the second pad in the second power supply area serves as the first The power input terminal of the power supply area.
如上所述的智能处理器,优选地,所述第二供电区内的第三焊盘作为所述第二供电区的接地端,所述第三供电区内的第三焊盘作为所述第三供电区的电源输入端。In the smart processor as described above, preferably, the third pad in the second power supply area serves as the ground terminal of the second power supply area, and the third pad in the third power supply area serves as the first Three power input terminals in the power supply area.
如上所述的智能处理器,优选地,所述智能处理器还包括基板,所述晶圆设置在所述基板上;所述基板上还设置有第一电路,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘通过所述第一电路连接。As mentioned above, preferably, the intelligent processor further includes a substrate, the wafer is disposed on the substrate; the substrate is further provided with a first circuit, and the first power supply area The second pad and the second pad in the second power supply area are connected through the first circuit.
如上所述的智能处理器,优选地,所述基板上还设置有第二电路,所述第二供电区内的第三焊盘与所述第三供电区内的第三焊盘通过所述第二电路连接。In the smart processor as described above, preferably, a second circuit is further provided on the substrate, and the third pad in the second power supply area and the third pad in the third power supply area pass through the Second circuit connection.
如上所述的智能处理器,优选地,所述智能处理器还包括封装罩,所述晶圆设置在所述基板的安装面上,所述封装罩罩设在所述晶圆上,且与所述安装面连接。As described above, preferably, the intelligent processor further includes a packaging cover, the wafer is provided on a mounting surface of the substrate, the packaging cover is provided on the wafer, and the The mounting surface is connected.
如上所述的智能处理器,优选地,所述封装罩为塑料罩或陶瓷罩或金属罩。In the above intelligent processor, preferably, the packaging cover is a plastic cover, a ceramic cover or a metal cover.
如上所述的智能处理器,优选地,所述智能处理器为芯片。As described above, the intelligent processor is preferably a chip.
本公开实施例还提供一种电器设备,包括:如上所述的智能处理器。An embodiment of the present disclosure also provides an electrical device, including: the intelligent processor as described above.
本公开实施例提供的晶圆、智能处理器及电器设备,通过使位于第一供 电区内的第一焊盘与作为电源输入端,第一供电区内的第二焊盘与第二供电区内的第二焊盘之间连接,第二供电区内的第三焊盘作为作为接地端;只需使第一供电区内的第一焊盘作为电源输入端,且第二供电区内的第三焊盘作为接地端,即可对晶圆进行供电;与现有技术中所有的晶圆上的焊盘均与用于安装晶圆的基板上的焊球连接相比,减少了与基板上的焊球连接的焊盘数量,进而可减小基板上焊球的数量,进而简化了基板的结构,减小了生产成本。In the wafer, the intelligent processor and the electrical equipment provided by the embodiments of the present disclosure, by using the first pad located in the first power supply area as a power input terminal, the second pad in the first power supply area and the second power supply area The second pad in the connection is connected, the third pad in the second power supply area is used as the ground terminal; only the first pad in the first power supply area is used as the power input terminal, and the second pad in the second power supply area The third pad is used as a ground terminal to supply power to the wafer; compared with all the pads on the wafer in the prior art and the solder ball connection on the substrate used to mount the wafer, the connection with the substrate is reduced The number of pads connected to the solder balls on the substrate can further reduce the number of solder balls on the substrate, thereby simplifying the structure of the substrate and reducing production costs.
附图说明BRIEF DESCRIPTION
一个或多个实施例通过与之对应的附图进行示例性说明,这些示例性说明和附图并不构成对实施例的限定,附图中具有相同参考数字标号的元件示为类似的元件,附图不构成比例限制,并且其中:One or more embodiments are exemplified by the corresponding drawings. These exemplary descriptions and the drawings do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a proportional limitation, and among them:
图1为本公开实施例提供的智能处理器的结构示意图;1 is a schematic structural diagram of an intelligent processor provided by an embodiment of the present disclosure;
图2为本公开实施例提供的晶圆的结构示意图一;2 is a schematic structural diagram 1 of a wafer provided by an embodiment of the present disclosure;
图3为本公开实施例提供的晶圆的结构示意图二。FIG. 3 is a second schematic structural diagram of a wafer provided by an embodiment of the present disclosure.
附图标记说明:Description of reference signs:
10、晶圆;10. Wafer;
20、基板;20. Substrate;
30、封装罩;30. Encapsulation cover;
101、第一供电区;101. The first power supply area;
102、第二供电区;102. The second power supply area;
103、第三供电区;103. The third power supply area;
1011、第一供电区内的第一焊盘;1011, the first pad in the first power supply area;
1012、第一供电区内的第二焊盘;1012. The second pad in the first power supply area;
1021、第二供电区内的第二焊盘;1021, the second pad in the second power supply area;
1022、第二供电区内的第三焊盘;1022, the third pad in the second power supply area;
1031、第三供电区内的第三焊盘;1031, the third pad in the third power supply area;
1032、第三供电区内的第四焊盘。1032. The fourth pad in the third power supply area.
具体实施方式detailed description
为了能够更加详尽地了解本公开实施例的特点与技术内容,下面结合附图对本公开实施例的实现进行详细阐述,所附附图仅供参考说明之用,并非用来限定本公开实施例。在以下的技术描述中,为方便解释起见,通过多个细节以提供对所披露实施例的充分理解。然而,在没有这些细节的情况下,一个或多个实施例仍然可以实施。在其它情况下,为简化附图,熟知的结构和装置可以简化展示。In order to understand the features and technical contents of the embodiments of the present disclosure in more detail, the following describes the implementation of the embodiments of the present disclosure in detail with reference to the drawings. The accompanying drawings are for reference only and are not intended to limit the embodiments of the present disclosure. In the following technical description, for convenience of explanation, various details are provided to provide a sufficient understanding of the disclosed embodiments. However, without these details, one or more embodiments can still be implemented. In other cases, to simplify the drawings, well-known structures and devices can be simplified.
实施例1Example 1
图2为本公开实施例提供的晶圆的结构示意图一;图3为本公开实施例提供的晶圆的结构示意图二。FIG. 2 is a first schematic structural view of a wafer provided by an embodiment of the present disclosure; FIG. 3 is a second structural schematic view of a wafer provided by an embodiment of the present disclosure.
请参照图1和图2。本实施例提供一种晶圆10,晶圆10上具有间隔设置的第一供电区101以及第二供电区102,第一供电区101包括第一焊盘和第二焊盘,第二供电区102包括第二焊盘和第三焊盘,第一供电区内的第一焊盘1011作为电源输入端,为第一供电区的内部件供电,第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021连接,第二供电区内的第三焊盘1022作为第二供电区102的接地端;第一供电区内的第一焊盘1011的电势大于第一供电区内的第二焊盘1012的电势,第二供电区内的第二焊盘1021的电势大于第二供电区内的第三焊盘1022的电势。Please refer to Figure 1 and Figure 2. This embodiment provides a wafer 10 having a first power supply area 101 and a second power supply area 102 spaced apart. The first power supply area 101 includes a first pad and a second pad, and a second power supply area 102 includes a second pad and a third pad. The first pad 1011 in the first power supply area serves as a power input terminal to supply power to the internal components in the first power supply area. The second pad 1012 in the first power supply area is The second pad 1021 in the second power supply area is connected, and the third pad 1022 in the second power supply area serves as the ground terminal of the second power supply area 102; the potential of the first pad 1011 in the first power supply area is greater than the first The potential of the second pad 1012 in the power supply area, the potential of the second pad 1021 in the second power supply area is greater than the potential of the third pad 1022 in the second power supply area.
本实施例中第一供电区内的第一焊盘1011和第一供电区内的第二焊盘1012可以为设置在晶圆10上的金属片,相同的,第二供电区内的第二焊盘1021和第二供电区内的第三焊盘1022也为设置在晶圆10上的金属片。In this embodiment, the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area may be metal sheets disposed on the wafer 10, and the same, the second pad in the second power supply area The pad 1021 and the third pad 1022 in the second power supply area are also metal sheets provided on the wafer 10.
本实施例中第一供电区内的第一焊盘1011作为电源输入端,可以为第一供电区内的第一焊盘1011与电源连接,以向第一供电区内的第一焊盘1011 提供较高的电势。In this embodiment, the first pad 1011 in the first power supply area is used as a power input terminal, and the first pad 1011 in the first power supply area can be connected to the power supply to the first pad 1011 in the first power supply area Provide a higher potential.
本实施例中,第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021之间的连接为电连接。在一个可实现的方式中,在晶圆10上设置有具有一定图形的第一铜片,第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021通过第一铜片连接。本实施例中第二供电区内的第三焊盘1022作为第二供电区102的接地端,其中第二供电区内的第三焊盘1022的电势可以为零,或者第二供电区内的第三焊盘1022的电势不为零,只要使得第二供电区内的第三焊盘1022具有一个参考电位,以保证第一供电区内的第一焊盘1011与第二供电区内第三焊盘1022之间具有一定的电压即可,使晶圆10可以正常工作。In this embodiment, the connection between the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area is an electrical connection. In a practical manner, a first copper sheet with a certain pattern is provided on the wafer 10, and the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area pass through the first Copper connection. In this embodiment, the third pad 1022 in the second power supply area serves as the ground terminal of the second power supply area 102, wherein the potential of the third pad 1022 in the second power supply area may be zero, or the The electric potential of the third pad 1022 is not zero, as long as the third pad 1022 in the second power supply area has a reference potential to ensure that the first pad 1011 in the first power supply area and the third in the second power supply area A certain voltage is required between the pads 1022, so that the wafer 10 can work normally.
本实施例中,第一供电区内的第二焊盘1012作为第一供电区101的接地端,第二供电区内的第二焊盘1021作为第二供电区102的电源输入端。工作时,第一供电区内的第一焊盘1011与第一供电区内的第二焊盘1012之间具有一定的电压,并且第二供电区内的第二焊盘1021与第二供电区内的第三焊盘1022之间具有一定的电压,使得第一供电区的内部件和第二供电区的内部件均可以正常工作。In this embodiment, the second pad 1012 in the first power supply area serves as the ground terminal of the first power supply area 101, and the second pad 1021 in the second power supply area serves as the power input terminal of the second power supply area 102. During operation, there is a certain voltage between the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area, and the second pad 1021 in the second power supply area and the second power supply area There is a certain voltage between the third pad 1022 in the inner part, so that the inner parts of the first power supply area and the inner parts of the second power supply area can work normally.
本实施例中第一供电区的内部件与第一供电区内的第一焊盘1011和第一供电区内的第二焊盘1012连接;相同的,在第二供电区的内部件与第二供电区内的第二焊盘1021和第二供电区内的第三焊盘1022连接。第一供电区内的第一焊盘1011的电势大于第一供电区内的第二焊盘1012的电势,并且第二供电区内的第二焊盘1021的电势大于第二供电区内的第三焊盘1022的电势,使得第一供电区的内部件与第二供电区的内部件均分得一部分电压。In this embodiment, the internal components in the first power supply area are connected to the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area; The second pad 1021 in the second power supply area is connected to the third pad 1022 in the second power supply area. The potential of the first pad 1011 in the first power supply area is greater than the potential of the second pad 1012 in the first power supply area, and the potential of the second pad 1021 in the second power supply area is greater than the potential of the second power supply area. The electric potential of the three pads 1022 makes the internal components of the first power supply area and the internal components of the second power supply area share a part of the voltage.
进一步地,第一供电区的内部件与第二供电区的内部件分得的电压可以相等,即第一供电区内的第一焊盘1011和第一供电区内的第二焊盘1012之间的电压等于第二供电区内的第二焊盘1021和第二供电区内的第三焊盘1022之间的电压。Further, the divided voltages of the internal components of the first power supply area and the internal components of the second power supply area may be equal, that is, between the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area The voltage between them is equal to the voltage between the second pad 1021 in the second power supply area and the third pad 1022 in the second power supply area.
本实施例提供的晶圆,通过使位于第一供电区内的第一焊盘1011作为电源输入端,第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021之间连接,第二供电区内的第三焊盘1022作为接地端;只需使第一供电区内的第一焊盘1011作为电源输入端,且第二供电区内的第三焊盘1022作为接地端,即可对晶圆10进行供电;与现有技术中所有的晶圆上的焊盘均与用于安装晶圆的基板上的焊球连接相比,减少了与基板上的焊球连接的焊盘数量,进而可减小基板上焊球的数量,进而简化了基板的结构,减小了生产成本。In the wafer provided in this embodiment, by using the first pad 1011 located in the first power supply area as a power input terminal, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area Connection, the third pad 1022 in the second power supply area serves as a ground terminal; only the first pad 1011 in the first power supply area serves as the power input terminal, and the third pad 1022 in the second power supply area As a ground terminal, the wafer 10 can be powered; compared with all the pads on the wafer in the prior art and the solder ball connection on the substrate for mounting the wafer, the soldering on the substrate is reduced The number of pads connected by the ball can further reduce the number of solder balls on the substrate, thereby simplifying the structure of the substrate and reducing the production cost.
本实施例中,晶圆10还包括第三供电区103,第三供电区103包括第三焊盘和第四焊盘,第三供电区内的第三焊盘1031与第二供电区内的第三焊盘1022连接,第三供电区内的第四焊盘1032作为接地端,第三供电区内的第三焊盘1031的电势大于三供电区内的第四焊盘1032的电势。使第三供电区内的第三焊盘1031与第二供电区内的第三焊盘1022连接,并且第三供电区内的第四焊盘1032作为接地端,可以减少用于安装具有三个供电区的晶圆10的基板上的焊球数量,以进一步简化基板的结构。In this embodiment, the wafer 10 further includes a third power supply area 103. The third power supply area 103 includes a third pad and a fourth pad. The third pad 1031 in the third power supply area and the second power supply area The third pad 1022 is connected, and the fourth pad 1032 in the third power supply area serves as a ground terminal. The potential of the third pad 1031 in the third power supply area is greater than the potential of the fourth pad 1032 in the third power supply area. The third pad 1031 in the third power supply area is connected to the third pad 1022 in the second power supply area, and the fourth pad 1032 in the third power supply area serves as a ground terminal, which can be The number of solder balls on the substrate of the wafer 10 in the power supply area to further simplify the structure of the substrate.
在一个可实现的方式中,在晶圆10上设置有具有一定图形的第一铜片和第二铜片,第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021通过第一铜片连接;第二供电区内的第三焊盘1022与第三供电区内的第三焊盘1031之间通过第二铜片连接。In a practical manner, a first copper sheet and a second copper sheet with a certain pattern are provided on the wafer 10, the second pad 1012 in the first power supply area and the second solder in the second power supply area The disk 1021 is connected by a first copper sheet; the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area are connected by a second copper plate.
本实施例中,第一供电区内的第二焊盘1012作为第一供电区101的接地端,第二供电区内的第二焊盘1021作为第二供电区102的电源输入端。第二供电区内的第三焊盘1022作为第二供电区102的接地端,第三供电区内的第三焊盘1031作为第三供电区103的电源输入端。工作时,第一供电区内的第一焊盘1011与第一供电区内的第二焊盘1012之间具有一定的电压,并且第二供电区内的第二焊盘1021与第二供电区内的第三焊盘1022之间具有一定的电压,第三供电区内的第三焊盘1031与第三供电区内的第四焊盘1032之间具有一定的电压,使得第一供电区的内部件、第二供电区的内部件以及第 三供电区的内部件均可以正常工作。In this embodiment, the second pad 1012 in the first power supply area serves as the ground terminal of the first power supply area 101, and the second pad 1021 in the second power supply area serves as the power input terminal of the second power supply area 102. The third pad 1022 in the second power supply area serves as a ground terminal of the second power supply area 102, and the third pad 1031 in the third power supply area serves as a power input terminal of the third power supply area 103. During operation, there is a certain voltage between the first pad 1011 in the first power supply area and the second pad 1012 in the first power supply area, and the second pad 1021 in the second power supply area and the second power supply area There is a certain voltage between the third pad 1022 in the inside, and there is a certain voltage between the third pad 1031 in the third power supply area and the fourth pad 1032 in the third power supply area, so that the The inner components, the inner components of the second power supply area, and the inner components of the third power supply area can all work normally.
进一步地,第一供电区的内部件、第二供电区的内部件以及第三供电区的内部件分得的电压相等。Further, the divided voltages of the internal components of the first power supply area, the internal components of the second power supply area, and the internal components of the third power supply area are equal.
本实施例中,第一供电区的内部件、第二供电区的内部件和第三供电的区内部件包括多个计算内核。本实施例中计算内核为设置在晶圆10具有一定的逻辑结构,计算内核用于对数据的处理、计算等操作。In this embodiment, the internal components in the first power supply area, the internal components in the second power supply area, and the internal components in the third power supply include multiple computing cores. In this embodiment, the calculation core is provided on the wafer 10 and has a certain logical structure. The calculation core is used for data processing, calculation, and other operations.
值得注意的是,本实施例中的晶圆10中还可以具有四个供电区、五个供电区等;相应的,每一供电区内均具有内部件及与内部件连接的焊盘,一个供电区内的一个焊盘作为该供电区的电源输入端与上一供电区的一个焊盘连接,该供电区内的另一个焊盘作为该供电区的接地端与下一供电区内的一个焊盘连接,即各供电区内的内部件串联,使得仅第一供电区内的第一焊盘1011作为电源输入端,同时最后一个供电区内的最后一个焊盘作为接地端,即可实现对所有供电区内的内部件进行供电。It is worth noting that the wafer 10 in this embodiment may also have four power supply areas, five power supply areas, etc .; correspondingly, each power supply area has internal components and pads connected to the internal components, one A pad in the power supply area is connected to a pad of the previous power supply area as a power input terminal of the power supply area, and another pad in the power supply area is used as a ground terminal of the power supply area and a pad of the next power supply area Pad connection, that is, the internal components in each power supply area are connected in series, so that only the first pad 1011 in the first power supply area is used as the power input terminal, and the last pad in the last power supply area is used as the ground terminal. Supply power to all internal components in the power supply area.
本实施例中,第二供电区102设置在第一供电区101与第三供电区103之间。第二供电区102设置在第三供电区103和第一供电区101之间,可以减小第二供电区内的第二焊盘1021与第一供电区内的第二焊盘1012之间的距离,并且可以减小第二供电区内的第三焊盘1022与第三供电区内的第三焊盘1031之间的距离。In this embodiment, the second power supply area 102 is disposed between the first power supply area 101 and the third power supply area 103. The second power supply area 102 is provided between the third power supply area 103 and the first power supply area 101, which can reduce the gap between the second pad 1021 in the second power supply area and the second pad 1012 in the first power supply area Distance, and the distance between the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be reduced.
本实施例中,第一供电区101包括的第一焊盘和第二焊盘至少为多个,多个第一供电区内的第一焊盘1011排列成相互平行的数个第一竖列,多个第一供电区内的第二焊盘1021排列成相互平行的数个第二竖列。第一竖列和第二竖列交替设置。第二供电区102包括多个第二焊盘和多个第三焊盘,多个第二供电区内的第二焊盘1021排列成相互平行的数个第三竖列,多个第二供电区内的第三焊盘1022排列成相互平行的数个第四竖列,且第三竖列和第四竖列交替设置,且每一第三竖列与一个第二竖列共线设置。In this embodiment, at least a plurality of first pads and second pads included in the first power supply area 101 are arranged, and the first pads 1011 in the plurality of first power supply areas are arranged in parallel first vertical columns The second pads 1021 in the plurality of first power supply areas are arranged in parallel second columns. The first vertical column and the second vertical column are alternately arranged. The second power supply area 102 includes a plurality of second pads and a plurality of third pads. The second pads 1021 in the plurality of second power supply areas are arranged in parallel third vertical columns, and the plurality of second power supplies The third pads 1022 in the area are arranged in several fourth vertical columns parallel to each other, and the third vertical columns and the fourth vertical columns are alternately arranged, and each third vertical column and one second vertical column are arranged collinearly.
具体地,第一竖列的各第一焊盘并联,第二竖列的各第二焊盘并联,第 三竖列的各第二焊盘并联,第四竖列的各第三焊盘并联;并且第一竖列的第一焊盘与电源连接,第二竖列的第二焊盘与第三竖列的第二焊盘连接,第四竖列的第三焊盘接地。进一步地,位于第一供电区101内的所有第一焊盘并联,位于第一供电区101内的所有第二焊盘并联,并且位于第二供电区102内的所有第二焊盘并联,位于第二供电区102内的所有第三焊盘并联。Specifically, the first pads of the first vertical column are connected in parallel, the second pads of the second vertical column are connected in parallel, the second pads of the third vertical column are connected in parallel, and the third pads of the fourth vertical column are connected in parallel ; And the first pad of the first vertical column is connected to the power supply, the second pad of the second vertical column is connected to the second pad of the third vertical column, and the third pad of the fourth vertical column is grounded. Further, all the first pads located in the first power supply area 101 are connected in parallel, all the second pads located in the first power supply area 101 are connected in parallel, and all the second pads located in the second power supply area 102 are connected in parallel, located at All third pads in the second power supply area 102 are connected in parallel.
具体地,晶圆10还包括第三供电区103,第三供电区103包括多个第三焊盘和多个第四焊盘;多个第三供电区内的第三焊盘1031排列成相互平行的数个第五竖列,多个第三供电区内的第四焊盘1032排列成相互平行的数个第六竖列,第五竖列和第六竖列交替设置,且每一第五竖列与一个第四竖列共线设置。Specifically, the wafer 10 further includes a third power supply area 103, and the third power supply area 103 includes a plurality of third pads and a plurality of fourth pads; the third pads 1031 in the plurality of third power supply areas are arranged to be mutually Parallel fifth vertical columns, the fourth pads 1032 in the multiple third power supply areas are arranged into parallel sixth vertical columns, the fifth vertical columns and the sixth vertical columns are alternately arranged, and each Five vertical columns are arranged in line with a fourth vertical column.
在一个可实现的方式中,第一竖列的各第一焊盘并联,第二竖列的各第二焊盘并联,第三竖列的各第二焊盘并联,第四竖列的各第三焊盘并联,第五竖列的第三焊盘并联,第六竖列的第四焊盘并联;并且第一竖列的第一焊盘与电源连接,第二竖列的第二焊盘与第三竖列的第二焊盘连接,第四竖列的第三焊盘与第五竖列的第三焊盘连接,第六竖列的第四焊盘接地。进一步地,位于第一供电区101内的所有第一焊盘并联,位于第一供电区101内的所有第二焊盘并联,位于第二供电区102内的所有第二焊盘并联,位于第二供电区102内的所有第三焊盘并联,位于第三供电区103内的所有第三焊盘并联,位于第三供电区103内的所有第四焊盘并联。In a practical manner, the first pads of the first vertical column are connected in parallel, the second pads of the second vertical column are connected in parallel, the second pads of the third vertical column are connected in parallel, and the fourth vertical columns are The third pads are connected in parallel, the third pads in the fifth column are connected in parallel, and the fourth pads in the sixth column are connected in parallel; and the first pads in the first column are connected to the power supply, and the second pads in the second column are soldered The disk is connected to the second pad of the third vertical column, the third pad of the fourth vertical column is connected to the third pad of the fifth vertical column, and the fourth pad of the sixth vertical column is grounded. Further, all first pads located in the first power supply area 101 are connected in parallel, all second pads located in the first power supply area 101 are connected in parallel, and all second pads located in the second power supply area 102 are connected in parallel, located in the first All third pads in the second power supply area 102 are connected in parallel, all third pads in the third power supply area 103 are connected in parallel, and all fourth pads in the third power supply area 103 are connected in parallel.
实施例2Example 2
图1为本公开实施例提供的智能处理器的结构示意图,请参照图1-图3。FIG. 1 is a schematic structural diagram of an intelligent processor provided by an embodiment of the present disclosure. Please refer to FIGS. 1-3.
本实施例提供一种智能处理器,包括如上所述的晶圆10。其中晶圆10与上述晶圆10的结构大体相同,在此不再赘述。This embodiment provides an intelligent processor, including the wafer 10 as described above. The structure of the wafer 10 is substantially the same as that of the above-mentioned wafer 10, which will not be repeated here.
本实施例提供的智能处理器还包括基板20,晶圆设置在基板20上;基板20上还设置有第一电路,第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021通过第一电路连接。The smart processor provided in this embodiment further includes a substrate 20 on which the wafer is disposed; the substrate 20 is also provided with a first circuit, a second pad 1012 in the first power supply area and a second The two pads 1021 are connected through the first circuit.
通过基板20上的第一电路实现第一供电区内的第二焊盘1012与第二供电区内的第二焊盘1021连接,与在晶圆10上设置第一铜片相比,可以避免在晶圆10上设置较多的金属片导致的晶圆10加工困难。The second pad 1012 in the first power supply area is connected to the second pad 1021 in the second power supply area through the first circuit on the substrate 20, which can be avoided compared with the first copper sheet provided on the wafer It is difficult to process the wafer 10 due to the large number of metal pieces placed on the wafer 10.
进一步地,基板20上还设置有第二电路,第二供电区内的第三焊盘1022与第三供电区内的第三焊盘1031通过第二电路连接。通过基板20上的第二电路实现第二供电区内的第三焊盘1022与第三供电区内的第三焊盘1031之间的连接,可以进一步避免在晶圆10上设置较多的金属片导致的晶圆10加工困难。Further, a second circuit is further provided on the substrate 20, and the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area are connected by a second circuit. The connection between the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be achieved by the second circuit on the substrate 20, which can further avoid placing more metal on the wafer 10 The wafer 10 is difficult to process due to the wafer.
进一步地,晶圆10安装在基板20的安装面上,相应的在基板20上与安装面相对的贴合面上设置有第一焊球和第二焊球,第一焊球与第一供电区内的第一焊盘1011连接,第二焊接球与第三供电区内的第四焊盘1032连接,第一焊球与电源连接,第二焊球接地,以为晶圆10供电。Further, the wafer 10 is mounted on the mounting surface of the substrate 20, and a corresponding soldering surface on the substrate 20 opposite to the mounting surface is provided with a first solder ball and a second solder ball, the first solder ball and the first power supply The first pad 1011 in the area is connected, the second solder ball is connected to the fourth pad 1032 in the third power supply area, the first solder ball is connected to the power supply, and the second solder ball is grounded to power the wafer 10.
具体地,基板20可以包括至少两个金属板以及位于相邻两金属板之间的绝缘板,相应的第一电路和第二电路可以在同一金属板上形成;当然为了避免同一金属板上的电路图形较为复杂,可以使第一电路和第二电路位于不同的金属层上。Specifically, the substrate 20 may include at least two metal plates and an insulating plate between two adjacent metal plates, and the corresponding first circuit and second circuit may be formed on the same metal plate; of course, in order to avoid the same metal plate The circuit pattern is relatively complicated, and the first circuit and the second circuit can be located on different metal layers.
在一个可实现的方式中,第一电路和第二电路可以均设置在基板20靠近安装面的金属板上,或者第一电路和第二电路均设置在基板20靠近贴合面的金属板上。当基板20上的金属板多于两个时,第一电路和第二电路可以设置在位于靠近安装面的金属板和靠近贴合面的金属板之间的不同金属板上;或者第一电路设置在靠近安装面的金属板上,且第二电路设置在靠近安装面的金属板和靠近贴合面的金属板之间的金属板上;或者第一电路设置在靠近贴合面的金属板上,且第二电路设置在靠近安装面的金属板和靠近贴合面的金属板之间的金属板上;或者第二电路设置在靠近安装面的金属板上,且第一电路设置在靠近安装面的金属板和靠近贴合面的金属板之间的金属板上;或者第二电路设置在靠近贴合面的金属板上,且第一电路设置在靠近安装面的 金属板和靠近贴合面的金属板之间的金属板上。当基板20上的金属板多于三个时,第一电路和第二电路可以均设置在靠近安装面的金属板和靠近贴合面的金属板之间,并且第一电路和第二电路位于不同的金属板上。In a practical manner, the first circuit and the second circuit may be both provided on the metal plate of the substrate 20 near the mounting surface, or the first circuit and the second circuit are both provided on the metal plate of the substrate 20 near the bonding surface . When there are more than two metal plates on the substrate 20, the first circuit and the second circuit may be disposed on different metal plates between the metal plate near the mounting surface and the metal plate near the bonding surface; or the first circuit It is set on the metal plate close to the mounting surface, and the second circuit is set on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface; or the first circuit is set on the metal plate close to the bonding surface And the second circuit is set on the metal plate between the metal plate close to the mounting surface and the metal plate close to the bonding surface; or the second circuit is set on the metal plate close to the mounting surface and the first circuit is set close to The metal plate between the metal plate on the mounting surface and the metal plate close to the bonding surface; or the second circuit is set on the metal plate near the bonding surface, and the first circuit is set on the metal plate close to the mounting surface and the close bonding The metal plate between the metal plates that meet. When there are more than three metal plates on the substrate 20, both the first circuit and the second circuit may be disposed between the metal plate near the mounting surface and the metal plate near the bonding surface, and the first circuit and the second circuit are located Different metal plates.
本实施例中的第一电路和第二电路为对金属板进行图形化后形成的具有一定图形的金属板。当第一电路位于靠近安装面的金属板上时,第一供电区内的第二焊盘1012和第二供电区内的第二焊盘1021可以直接与第一电路连接,当第一电路位于其他的金属板上时,第一供电区内的第二焊盘1012和第二供电区内的第二焊盘1021可以通过过孔与第一电路连接;相同的,当第二电路位于靠近安装面的金属板上时,第二供电区内的第三焊盘1022和第三供电区内的第三焊盘1031可以直接与第二电路连接,当第二电路位于其他的金属板上时,第二供电区内的第三焊盘1022和第三供电区内的第三焊盘1031可以通过过孔与第二电路连接。The first circuit and the second circuit in this embodiment are metal plates with certain patterns formed by patterning the metal plates. When the first circuit is located on the metal plate close to the mounting surface, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be directly connected to the first circuit when the first circuit is located On other metal plates, the second pad 1012 in the first power supply area and the second pad 1021 in the second power supply area can be connected to the first circuit through the via; similarly, when the second circuit is located close to the installation On the metal plate on the surface, the third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area can be directly connected to the second circuit. When the second circuit is located on another metal plate, The third pad 1022 in the second power supply area and the third pad 1031 in the third power supply area may be connected to the second circuit through a via.
本实施例中,智能处理器还包括封装罩30,晶圆10设置在基板20的安装面上,封装罩30罩设在晶圆10上,且与安装面连接。封装罩30可以对晶圆10进行密封,同时封装罩30也可以对晶圆10进行保护,以免外界物体与晶圆10接触造成晶圆10的损坏。In this embodiment, the intelligent processor further includes a packaging cover 30, the wafer 10 is disposed on the mounting surface of the substrate 20, the packaging cover 30 is disposed on the wafer 10, and is connected to the mounting surface. The encapsulation cover 30 can seal the wafer 10, and at the same time, the encapsulation cover 30 can also protect the wafer 10 to prevent damage to the wafer 10 caused by contact of external objects with the wafer 10.
进一步地,封装罩30为塑料罩或陶瓷罩或金属罩。Further, the package cover 30 is a plastic cover, a ceramic cover or a metal cover.
本实施例中的智能处理器为芯片。The intelligent processor in this embodiment is a chip.
在其他实施例中,还提供一种电器设备,包括:如上所述的智能处理器。In other embodiments, an electrical device is also provided, including: the intelligent processor as described above.
当用于本申请中时,虽然术语“第一”、“第二”等可能会在本申请中使用以描述各元件,但这些元件不应受到这些术语的限制。这些术语仅用于将一个元件与另一个元件区别开。比如,在不改变描述的含义的情况下,第一元件可以叫做第二元件,并且同样第,第二元件可以叫做第一元件,只要所有出现的“第一元件”一致重命名并且所有出现的“第二元件”一致重命名即可。第一元件和第二元件都是元件,但可以不是相同的元件。When used in this application, although the terms "first", "second", etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without changing the meaning of the description, the first element can be called the second element, and likewise, the second element can be called the first element, as long as all occurrences of the "first element" are consistently renamed and all occurrences of The "second component" can be renamed consistently. The first element and the second element are both elements, but they may not be the same element.
另外,上述技术描述中使用术语以提供所描述的实施例的透彻理解。然 而,并不需要过于详细的细节以实现所描述的实施例。因此,实施例的上述描述是为了阐释和描述而呈现的。上述描述中所呈现的实施例以及根据这些实施例所公开的例子是单独提供的,以添加上下文并有助于理解所描述的实施例。上述说明书不用于做到无遗漏或将所描述的实施例限制到本公开的精确形式。根据上述教导,若干修改、选择适用以及变化是可行的。在某些情况下,没有详细描述为人所熟知的处理步骤以避免不必要地影响所描述的实施例。In addition, terminology is used in the above technical description to provide a thorough understanding of the described embodiments. However, no excessively detailed details are required to implement the described embodiments. Therefore, the above description of the embodiments is presented for explanation and description. The embodiments presented in the above description and the examples disclosed according to these embodiments are provided separately to add context and help to understand the described embodiments. The above description is not intended to be without omission or to limit the described embodiments to the precise form of this disclosure. Based on the above teachings, several modifications, choices and changes are possible. In some cases, well-known processing steps are not described in detail to avoid unnecessarily affecting the described embodiments.

Claims (26)

  1. 一种晶圆,其特征在于,所述晶圆上具有间隔设置的第一供电区以及第二供电区,所述第一供电区包括第一焊盘和第二焊盘,所述第二供电区包括第二焊盘和第三焊盘,所述第一供电区内的第一焊盘作为电源输入端,为所述第一供电区的内部件供电,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接,所述第二供电区内的第三焊盘作为所述第二供电区的接地端;所述第一供电区内的第一焊盘的电势大于所述第一供电区内的第二焊盘的电势,所述第二供电区内的第二焊盘的电势大于所述第二供电区内的第三焊盘的电势。A wafer, characterized in that the wafer has a first power supply area and a second power supply area spaced apart, the first power supply area includes a first pad and a second pad, the second power supply The area includes a second pad and a third pad. The first pad in the first power supply area serves as a power input terminal to supply power to the internal components of the first power supply area. The second pad is connected to the second pad in the second power supply area, and the third pad in the second power supply area serves as the ground terminal of the second power supply area; The potential of one pad is greater than the potential of the second pad in the first power supply area, and the potential of the second pad in the second power supply area is greater than the potential of the third pad in the second power supply area .
  2. 根据权利要求1所述的晶圆,其特征在于,所述晶圆还包括第三供电区,所述第三供电区包括第三焊盘和第四焊盘,所述第三供电区内的第三焊盘与所述第二供电区内的第三焊盘连接,所述第三供电区内的第四焊盘作为接地端,所述第三供电区内的第三焊盘的电势大于所述三供电区内的第四焊盘的电势。The wafer according to claim 1, wherein the wafer further comprises a third power supply area, the third power supply area comprises a third pad and a fourth pad, and the third power supply area The third pad is connected to the third pad in the second power supply area, the fourth pad in the third power supply area serves as a ground terminal, and the potential of the third pad in the third power supply area is greater than The electric potential of the fourth pad in the three power supply areas.
  3. 根据权利要求2所述的晶圆,其特征在于,所述第二供电区设置在所述第一供电区与所述第三供电区之间。The wafer according to claim 2, wherein the second power supply area is disposed between the first power supply area and the third power supply area.
  4. 根据权利要求1所述的晶圆,其特征在于,所述第一供电区包括的第一焊盘和第二焊盘至少为多个,多个所述第一供电区内的第一焊盘排列成相互平行的数个第一竖列,多个所述第一供电区内的第二焊盘排列成相互平行的数个第二竖列。The wafer according to claim 1, wherein the first power supply area includes at least a plurality of first pads and second pads, and a plurality of first pads in the first power supply area The first vertical columns are arranged parallel to each other, and the second pads in the plurality of first power supply areas are arranged into the second vertical columns parallel to each other.
  5. 根据权利要求4所述的晶圆,其特征在于,所述第一竖列和所述第二竖列交替设置。The wafer according to claim 4, wherein the first vertical columns and the second vertical columns are alternately arranged.
  6. 根据权利要求5所述的晶圆,其特征在于,所述第二供电区包括的第二焊盘和第三焊盘至少为多个,多个所述第二供电区内的第二焊盘排列成相互平行的数个第三竖列,多个所述第二供电区内的第三焊盘排列成相互平行的数个第四竖列,且所述第三竖列和所述第四竖列交替设置,且每一所述第 三竖列与一个所述第二竖列共线设置。The wafer according to claim 5, wherein the second power supply area includes at least a plurality of second pads and third pads, and a plurality of second pads in the second power supply area A plurality of third vertical columns arranged parallel to each other, a plurality of third pads in the second power supply area are arranged into a plurality of parallel fourth vertical columns, and the third vertical column and the fourth The vertical columns are alternately arranged, and each of the third vertical columns is arranged collinearly with one of the second vertical columns.
  7. 根据权利要求6所述的晶圆,其特征在于,所述晶圆还包括第三供电区,所述第三供电区包括多个第三焊盘和多个第四焊盘;多个所述第三供电区内的第三焊盘排列成相互平行的数个第五竖列,多个所述第三供电区内的第四焊盘排列成相互平行的数个第六竖列,所述第五竖列和所述第六竖列交替设置,且每一所述第五竖列与一个所述第四竖列共线设置。The wafer according to claim 6, wherein the wafer further comprises a third power supply area, the third power supply area comprises a plurality of third pads and a plurality of fourth pads; a plurality of the The third pads in the third power supply area are arranged in parallel fifth vertical columns, and the fourth pads in the third power supply areas are arranged in parallel sixth vertical columns. The fifth vertical column and the sixth vertical column are alternately arranged, and each fifth vertical column and one fourth vertical column are arranged collinearly.
  8. 根据权利要求2所述的晶圆,其特征在于,所述第一供电区的内部件、第二供电区的内部件和第三供电的区内部件包括多个计算内核。The wafer according to claim 2, wherein the internal components of the first power supply area, the internal components of the second power supply area, and the internal components of the third power supply include multiple computing cores.
  9. 根据权利要求1或2所述的晶圆,其特征在于,所述第一供电区内的第二焊盘作为所述第一供电区的接地端,所述第二供电区内的第二焊盘作为所述第二供电区的电源输入端。The wafer according to claim 1 or 2, wherein the second pad in the first power supply area serves as a ground terminal of the first power supply area, and the second solder in the second power supply area The disk serves as a power input end of the second power supply area.
  10. 根据权利要求2所述的晶圆,其特征在于,所述第二供电区内的第三焊盘作为所述第二供电区的接地端,所述第三供电区内的第三焊盘作为所述第三供电区的电源输入端。The wafer according to claim 2, wherein the third pad in the second power supply area serves as the ground terminal of the second power supply area, and the third pad in the third power supply area serves as the ground A power input terminal of the third power supply area.
  11. 一种智能处理器,其特征在于,包括晶圆,所述晶圆上具有间隔设置的第一供电区以及第二供电区,所述第一供电区包括第一焊盘和第二焊盘,所述第二供电区包括第二焊盘和第三焊盘,所述第一供电区内的第一焊盘作为电源输入端,为所述第一供电区的内部件供电,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘连接,所述第二供电区内的第三焊盘作为所述第二供电区的接地端;所述第一供电区内的第一焊盘的电势大于所述第一供电区内的第二焊盘的电势,所述第二供电区内的第二焊盘的电势大于所述第二供电区内的第三焊盘的电势。An intelligent processor, characterized by comprising a wafer, the wafer having a first power supply area and a second power supply area spaced apart, the first power supply area includes a first pad and a second pad, The second power supply area includes a second pad and a third pad. The first pad in the first power supply area serves as a power input terminal to supply power to internal components of the first power supply area. The second pad in the power supply area is connected to the second pad in the second power supply area, and the third pad in the second power supply area serves as the ground terminal of the second power supply area; the first The potential of the first pad in the power supply area is greater than the potential of the second pad in the first power supply area, and the potential of the second pad in the second power supply area is greater than the The potential of the three pads.
  12. 根据权利要求11所述的智能处理器,其特征在于,所述晶圆还包括第三供电区,所述第三供电区包括第三焊盘和第四焊盘,所述第三供电区内的第三焊盘与所述第二供电区内的第三焊盘连接,所述第三供电区内的第四焊盘作为接地端,所述第三供电区内的第三焊盘的电势大于所述三供电区内 的第四焊盘的电势。The intelligent processor according to claim 11, wherein the wafer further includes a third power supply area, the third power supply area includes a third pad and a fourth pad, and the third power supply area Is connected to the third pad in the second power supply area, the fourth pad in the third power supply area serves as a ground terminal, and the potential of the third pad in the third power supply area It is greater than the potential of the fourth pad in the three power supply regions.
  13. 根据权利要求12所述的智能处理器,其特征在于,所述第二供电区设置在所述第一供电区与所述第三供电区之间。The intelligent processor according to claim 12, wherein the second power supply area is provided between the first power supply area and the third power supply area.
  14. 根据权利要求11或12所述的智能处理器,其特征在于,所述第一供电区包括的第一焊盘和第二焊盘至少为多个,多个所述第一供电区内的第一焊盘排列成相互平行的数个第一竖列,多个所述第一供电区内的第二焊盘排列成相互平行的数个第二竖列。The intelligent processor according to claim 11 or 12, wherein the first power supply area includes at least a plurality of first pads and second pads, and a plurality of One pad is arranged in several first vertical columns parallel to each other, and the second pads in the plurality of first power supply areas are arranged in several second vertical columns parallel to each other.
  15. 根据权利要求14所述的智能处理器,其特征在于,所述第一竖列和所述第二竖列交替设置。The intelligent processor according to claim 14, wherein the first vertical column and the second vertical column are alternately arranged.
  16. 根据权利要求15所述的智能处理器,其特征在于,所述第二供电区包括的第二焊盘和第三焊盘至少为多个,多个所述第二供电区内的第二焊盘排列成相互平行的数个第三竖列,多个所述第二供电区内的第三焊盘排列成相互平行的数个第四竖列,且所述第三竖列和所述第四竖列交替设置,且每一所述第三竖列与一个所述第二竖列共线设置。The intelligent processor according to claim 15, wherein the second power supply area includes at least a plurality of second pads and third pads, and a plurality of second solders in the second power supply area The disks are arranged in parallel third vertical columns, the third pads in the second power supply area are arranged in parallel fourth vertical columns, and the third vertical column and the third vertical column Four vertical columns are alternately arranged, and each of the third vertical columns is arranged collinearly with one of the second vertical columns.
  17. 根据权利要求16所述的智能处理器,其特征在于,所述晶圆还包括第三供电区,所述第三供电区包括多个第三焊盘和多个第四焊盘;多个所述第三供电区内的第三焊盘排列成相互平行的数个第五竖列,多个所述第三供电区内的第四焊盘排列成相互平行的数个第六竖列,所述第五竖列和所述第六竖列交替设置,且每一所述第五竖列与一个所述第四竖列共线设置。The intelligent processor according to claim 16, wherein the wafer further includes a third power supply area, the third power supply area includes a plurality of third pads and a plurality of fourth pads; The third pads in the third power supply area are arranged in parallel fifth vertical columns, and the fourth pads in the third power supply areas are arranged in parallel sixth vertical columns. The fifth vertical column and the sixth vertical column are alternately arranged, and each fifth vertical column is arranged collinearly with one fourth vertical column.
  18. 根据权利要求11所述的智能处理器,其特征在于,所述第一供电区的内部件、第二供电区的内部件和第三供电区的内部件包括多个计算内核。The intelligent processor according to claim 11, wherein the internal components of the first power supply area, the internal components of the second power supply area, and the internal components of the third power supply area include multiple computing cores.
  19. 根据权利要求11或12所述的智能处理器,其特征在于,所述第一供电区内的第二焊盘作为所述第一供电区的接地端,所述第二供电区内的第二焊盘作为所述第二供电区的电源输入端。The intelligent processor according to claim 11 or 12, wherein the second pad in the first power supply area serves as a ground terminal of the first power supply area, and the second pad in the second power supply area The pad serves as a power input end of the second power supply area.
  20. 根据权利要求12所述的智能处理器,其特征在于,所述第二供电区内的第三焊盘作为所述第二供电区的接地端,所述第三供电区内的第三焊盘 作为所述第三供电区的电源输入端。The intelligent processor according to claim 12, wherein the third pad in the second power supply area serves as a ground terminal of the second power supply area, and the third pad in the third power supply area As a power input terminal of the third power supply area.
  21. 根据权利要求12所述的智能处理器,其特征在于,所述智能处理器还包括基板,所述晶圆设置在所述基板上;所述基板上还设置有第一电路,所述第一供电区内的第二焊盘与所述第二供电区内的第二焊盘通过所述第一电路连接。The intelligent processor according to claim 12, wherein the intelligent processor further comprises a substrate, the wafer is disposed on the substrate; the substrate is further provided with a first circuit, the first The second pad in the power supply area and the second pad in the second power supply area are connected by the first circuit.
  22. 根据权利要求21所述的智能处理器,其特征在于,所述基板上还设置有第二电路,所述第二供电区内的第三焊盘与所述第三供电区内的第三焊盘通过所述第二电路连接。The intelligent processor according to claim 21, wherein a second circuit is further provided on the substrate, the third pad in the second power supply area and the third solder in the third power supply area The disk is connected through the second circuit.
  23. 根据权利要求21所述的智能处理器,其特征在于,所述智能处理器还包括封装罩,所述晶圆设置在所述基板的安装面上,所述封装罩罩设在所述晶圆上,且与所述安装面连接。The intelligent processor according to claim 21, wherein the intelligent processor further comprises a packaging cover, the wafer is provided on a mounting surface of the substrate, and the packaging cover is provided on the wafer And connected to the mounting surface.
  24. 根据权利要求23所述的智能处理器,其特征在于,所述封装罩为塑料罩或陶瓷罩或金属罩。The intelligent processor according to claim 23, wherein the packaging cover is a plastic cover, a ceramic cover or a metal cover.
  25. 根据权利要求11所述的智能处理器,其特征在于,所述智能处理器为芯片。The intelligent processor according to claim 11, wherein the intelligent processor is a chip.
  26. 一种电器设备,其特征在于,包括:权利要求11-25任一项所述的智能处理器。An electrical device, characterized by comprising: the intelligent processor according to any one of claims 11-25.
PCT/CN2018/114351 2018-11-07 2018-11-07 Wafer, smart processor, and electrical device WO2020093265A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1754259A (en) * 2003-02-26 2006-03-29 三洋电机株式会社 Semiconductor integrated circuit device and its power supply wiring method
CN102891146A (en) * 2011-07-22 2013-01-23 瑞萨电子株式会社 Semiconductor device
US8659144B1 (en) * 2011-12-15 2014-02-25 Marvell International Ltd. Power and ground planes in package substrate
WO2017203607A1 (en) * 2016-05-24 2017-11-30 株式会社野田スクリーン Intermediate connector, semiconductor device equipped with intermediate connector, and method for manufacturing intermediate connector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1754259A (en) * 2003-02-26 2006-03-29 三洋电机株式会社 Semiconductor integrated circuit device and its power supply wiring method
CN102891146A (en) * 2011-07-22 2013-01-23 瑞萨电子株式会社 Semiconductor device
US8659144B1 (en) * 2011-12-15 2014-02-25 Marvell International Ltd. Power and ground planes in package substrate
WO2017203607A1 (en) * 2016-05-24 2017-11-30 株式会社野田スクリーン Intermediate connector, semiconductor device equipped with intermediate connector, and method for manufacturing intermediate connector

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