WO2020069467A1 - Micro-dispositifs électroluminescents - Google Patents

Micro-dispositifs électroluminescents Download PDF

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Publication number
WO2020069467A1
WO2020069467A1 PCT/US2019/053694 US2019053694W WO2020069467A1 WO 2020069467 A1 WO2020069467 A1 WO 2020069467A1 US 2019053694 W US2019053694 W US 2019053694W WO 2020069467 A1 WO2020069467 A1 WO 2020069467A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
led
leds
flat region
contact
Prior art date
Application number
PCT/US2019/053694
Other languages
English (en)
Inventor
Costas DIMITROPOULOS
Sungsoo Yi
John Edward Epler
Byung-Kwon Han
Original Assignee
Lumileds Holding B.V.
Lumileds Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/144,751 external-priority patent/US10811460B2/en
Priority claimed from US16/584,941 external-priority patent/US10923628B2/en
Application filed by Lumileds Holding B.V., Lumileds Llc filed Critical Lumileds Holding B.V.
Publication of WO2020069467A1 publication Critical patent/WO2020069467A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Abstract

L'invention concerne des techniques, des dispositifs et des systèmes qui comprennent des DEL dotés d'une première région plate, à une première hauteur à partir d'une base de DEL et comprenant une pluralité de couches épitaxiales comprenant une première couche n, une première couche active et une première couche p. Une seconde région plate est pourvue, à une seconde hauteur à partir de la base de DEL et parallèle à la première région plate, et comprend au moins une seconde couche n. Une paroi latérale inclinée reliant la première région plate et la seconde région plate est pourvue et comprend au moins une troisième couche n, la première couche n étant plus épaisse qu'au moins une partie de la troisième couche n. Un contact p est formé sur la première couche p et un contact n formé sur la seconde couche n.
PCT/US2019/053694 2018-09-27 2019-09-27 Micro-dispositifs électroluminescents WO2020069467A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US16/144,751 2018-09-27
US16/144,751 US10811460B2 (en) 2018-09-27 2018-09-27 Micrometer scale light emitting diode displays on patterned templates and substrates
EP18209260 2018-11-29
EP18209260.1 2018-11-29
US16/584,941 US10923628B2 (en) 2018-09-27 2019-09-26 Micrometer scale light emitting diode displays on patterned templates and substrates
US16/584,941 2019-09-26

Publications (1)

Publication Number Publication Date
WO2020069467A1 true WO2020069467A1 (fr) 2020-04-02

Family

ID=68208354

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/053694 WO2020069467A1 (fr) 2018-09-27 2019-09-27 Micro-dispositifs électroluminescents

Country Status (2)

Country Link
TW (2) TWI804685B (fr)
WO (1) WO2020069467A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112669715A (zh) * 2020-12-24 2021-04-16 深圳市华星光电半导体显示技术有限公司 连接件、显示面板及其制作方法、显示装置

Citations (11)

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Publication number Priority date Publication date Assignee Title
US20040129929A1 (en) * 2002-09-06 2004-07-08 Hiroyuki Okuyama Semiconductor light emitting device and fabrication method thereof, integral type semiconductor light emitting unit and fabrication method thereof, image display unit and fabrication method thereof, and illuminating unit and fabrication method thereof
US20070200135A1 (en) * 2006-01-12 2007-08-30 National Institute Of Advanced Industrial Science And Technology III-V group compound semiconductor light-emitting diode
WO2008091846A2 (fr) * 2007-01-22 2008-07-31 Cree Led Lighting Solutions, Inc. Systèmes d'éclairage employant des réseaux connectés de façon externe de dispositifs luminescents et procédé de fabrication de ces dispositifs
US20090032799A1 (en) * 2007-06-12 2009-02-05 Siphoton, Inc Light emitting device
US20100264441A1 (en) * 2009-04-16 2010-10-21 Yu-Sik Kim Light emitting element and fabricating method thereof
US20120074441A1 (en) * 2010-09-24 2012-03-29 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
WO2012059837A1 (fr) * 2010-11-04 2012-05-10 Koninklijke Philips Electronics N.V. Dispositifs électroluminescents à semi-conducteur formés à partir de structures de configuration cristallographique lâche
US20140166974A1 (en) * 2012-12-14 2014-06-19 Samsung Electronics Co., Ltd. Nano-structured light-emitting devices
US20160197232A1 (en) * 2015-01-06 2016-07-07 Apple Inc. Led structures for reduced non-radiative sidewall recombination
US20170012175A1 (en) * 2015-07-06 2017-01-12 Lextar Electronics Corporation Light-emitting element and light-emitting device
US20180182275A1 (en) * 2016-12-23 2018-06-28 Intel Corporation Monolithic micro led display

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8794501B2 (en) * 2011-11-18 2014-08-05 LuxVue Technology Corporation Method of transferring a light emitting diode

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129929A1 (en) * 2002-09-06 2004-07-08 Hiroyuki Okuyama Semiconductor light emitting device and fabrication method thereof, integral type semiconductor light emitting unit and fabrication method thereof, image display unit and fabrication method thereof, and illuminating unit and fabrication method thereof
US20070200135A1 (en) * 2006-01-12 2007-08-30 National Institute Of Advanced Industrial Science And Technology III-V group compound semiconductor light-emitting diode
WO2008091846A2 (fr) * 2007-01-22 2008-07-31 Cree Led Lighting Solutions, Inc. Systèmes d'éclairage employant des réseaux connectés de façon externe de dispositifs luminescents et procédé de fabrication de ces dispositifs
US20090032799A1 (en) * 2007-06-12 2009-02-05 Siphoton, Inc Light emitting device
US20100264441A1 (en) * 2009-04-16 2010-10-21 Yu-Sik Kim Light emitting element and fabricating method thereof
US20120074441A1 (en) * 2010-09-24 2012-03-29 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
WO2012059837A1 (fr) * 2010-11-04 2012-05-10 Koninklijke Philips Electronics N.V. Dispositifs électroluminescents à semi-conducteur formés à partir de structures de configuration cristallographique lâche
US20140166974A1 (en) * 2012-12-14 2014-06-19 Samsung Electronics Co., Ltd. Nano-structured light-emitting devices
US20160197232A1 (en) * 2015-01-06 2016-07-07 Apple Inc. Led structures for reduced non-radiative sidewall recombination
US20170012175A1 (en) * 2015-07-06 2017-01-12 Lextar Electronics Corporation Light-emitting element and light-emitting device
US20180182275A1 (en) * 2016-12-23 2018-06-28 Intel Corporation Monolithic micro led display

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112669715A (zh) * 2020-12-24 2021-04-16 深圳市华星光电半导体显示技术有限公司 连接件、显示面板及其制作方法、显示装置

Also Published As

Publication number Publication date
TW202030881A (zh) 2020-08-16
TWI804685B (zh) 2023-06-11
TW202329444A (zh) 2023-07-16

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