WO2020063153A1 - 一种led显示屏 - Google Patents

一种led显示屏 Download PDF

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Publication number
WO2020063153A1
WO2020063153A1 PCT/CN2019/100477 CN2019100477W WO2020063153A1 WO 2020063153 A1 WO2020063153 A1 WO 2020063153A1 CN 2019100477 W CN2019100477 W CN 2019100477W WO 2020063153 A1 WO2020063153 A1 WO 2020063153A1
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WO
WIPO (PCT)
Prior art keywords
led
light
display screen
led display
light source
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PCT/CN2019/100477
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English (en)
French (fr)
Inventor
胡飞
李士杰
李屹
Original Assignee
深圳光峰科技股份有限公司
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Publication of WO2020063153A1 publication Critical patent/WO2020063153A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • the present application relates to the field of display technology, and in particular, to an LED display screen.
  • LED display screens are assembled or packaged by light emitting diodes to form a pixel matrix, and each light emitting diode chip is controlled to emit light of different brightness and color through different voltages to achieve image display.
  • LED displays have the advantages of high brightness, long life, and good performance stability. They are widely used in outdoor advertising. Due to the long viewing distance, despite the large pixel matrix spacing of LED displays, it still does not affect its display effect.
  • LED display screens have gradually been put into indoor display applications. The viewing distance of indoor display applications is relatively short, making some of the disadvantages of LED display screens magnified, such as watching particles at close range. The feeling is too strong, the light filling rate is low, and the light is not uniform.
  • a diffusion film is currently added to solve the problems of light fill ratio and uneven light output between pixel lattices.
  • the addition of the diffusion film makes the light emission angle of the light-emitting diodes increase and further increases. In this way, the crosstalk of light between the pixel lattices, that is, the large-angle light from the light-emitting diodes in a single pixel enters adjacent pixels, which seriously affects the display effect.
  • the technical problem mainly solved by this application is to provide an LED display screen, which can reduce the light emission angle of the LED chip and reduce the light crosstalk between adjacent pixels.
  • the first technical solution adopted in the present application is to provide an LED display screen including a plurality of LED light sources distributed in an array.
  • the LED light source includes an LED chip and a package covering the surface of the LED chip. Resin, wherein the thickness of the encapsulating resin ranges from 1 mm to 3 mm.
  • the cut surface of the packaging resin along the light emitting direction of the LED chip is an inverted trapezoid.
  • the cut surface of the packaging resin along the light emitting direction of the LED chip is inverted.
  • the encapsulating resin includes an upper surface and a lower surface, and an area ratio of the upper surface and the lower surface is k, where 1 ⁇ k ⁇ 3.75, and preferably 1.5 ⁇ k ⁇ 2.5.
  • the encapsulating resin includes light-absorbing particles, and the concentration of the light-absorbing particles is 1 to 200 mol / cm 3 .
  • the light absorbing particles include at least one of colored glass particles and metal nanoparticles.
  • the LED light source further includes a reflective layer disposed outside the encapsulating resin and bonded adjacent to the encapsulating resin.
  • the reflectivity of the reflective layer ranges from 50% to 90%.
  • At least one side of the LED chip is further provided with a black light absorbing layer, and the encapsulating resin covers the LED chip and the black light absorbing layer.
  • a shading frame is provided between adjacent LED light sources.
  • the side wall of the light-shielding frame opposite to the LED light source is coated with an absorption layer or a dispersive layer.
  • the diffusion film disposed opposite to the LED light source, and the diffusion film is an integrally formed film or a splicing film.
  • different regions of the diffusion film have different angles of diffusion angles for the light emitted from the LED light source.
  • the LED display screen provided by the present application includes LED light sources arranged in an array.
  • the LED light source includes an LED chip and a packaging resin covering the surface of the LED chip.
  • the thickness of the packaging resin ranges from 1 mm to 3 mm.
  • FIG. 1 is a schematic structural diagram of an embodiment of an LED display screen of the present application.
  • FIG. 2 is a schematic structural diagram of a first embodiment of an LED light source in an LED display screen of the present application
  • 3a is a schematic diagram of a divergence angle distribution of an LED light source when a conventional package thickness is 0.3 mm;
  • 3b is a schematic diagram of the divergence angle distribution of the LED light source when the package thickness of the present application is 3mm;
  • 4a is a schematic structural diagram when the shape of the packaging resin of the present application is a pyramid
  • 4b is a schematic structural diagram when the shape of the packaging resin of the present application is a round table
  • FIG. 5 is a schematic structural diagram of a second embodiment of an LED light source in an LED display screen of the present application.
  • FIG. 6 is a schematic structural diagram of a third embodiment of an LED light source in an LED display screen of the present application.
  • FIG. 7 is a schematic structural diagram when the cut surface of the packaging resin along the light emitting direction of the LED chip is inverted in the third embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a fourth embodiment of an LED light source in an LED display screen of the present application.
  • FIG. 9 is a schematic structural diagram when a cross-section of the encapsulating resin along the light emitting direction of the LED chip is inverted in the fourth embodiment of the present application;
  • FIG. 10 is a schematic diagram of a wavelength change after adding light absorbing particles to a sealing resin in a fourth embodiment of the present application.
  • FIG. 11 is a schematic structural diagram of the black light absorbing layer added to the LED light source in FIG. 8; FIG.
  • FIG. 12 is a schematic structural diagram after adding a black light absorbing layer to the LED light source in FIG. 9; FIG.
  • FIG. 13 is a schematic structural diagram of an LED display screen according to a fifth embodiment of the present application.
  • FIG. 14 is a schematic diagram of an area ratio of an upper surface surface and a lower surface of the LED display screen of the present application and an angle distribution of light emitted by an LED light source.
  • FIG. 1 is a schematic structural diagram of an embodiment of the LED display screen of the present application.
  • the LED display screen 1 includes a plurality of LED light sources 11 arranged in an array.
  • FIG. 2 is a schematic structural diagram of an embodiment of an LED light source in an LED display screen of the present application.
  • the LED light source includes an LED chip 111 and an encapsulating resin 112 covering the surface of the LED chip 111, and a surrounding encapsulating resin.
  • 112 is a reflective layer 113 disposed adjacently, wherein the thickness h of the encapsulating resin 112 ranges from 1 mm to 3 mm. Preferably, the thickness h of the encapsulating resin 112 is 2 mm.
  • the thickness of the encapsulating resin 112 is increased by about 10 times, which effectively improves the aspect ratio of the encapsulating resin 112, thus increasing the upper plane of the encapsulating resin 112.
  • the ratio of the size a to the size b of the lower plane enables the large-angle light emitted by the LED chip 111 to be collected by the reflection layer 113 to the diffusion film corresponding to the pixel unit as much as possible.
  • FIG. 3a is a schematic diagram of the divergence angle distribution of the LED light source when the conventional package thickness is 0.3mm. Because the thickness of the packaging resin is thin, there is only a very large angle (for example, plus or minus 85 °). It will be reflected by the reflective layer 113, so this LED light source can be approximated as a Lambertian light source, and more outgoing light will still radiate in a large solid angle space, which easily causes light crosstalk between pixels. As shown in Figure 3b, Figure 3b is a schematic diagram of the divergence angle distribution of the LED light source when the package thickness is 3mm. When the thickness of the packaging resin 42 is increased to about 10 times, more large-angle light is reflected by the reflective layer and emitted at a small angle, making the LED The light emitting angle is reduced to within 50 °.
  • the encapsulating resin 112 can be a pyramid or a circular table structure.
  • Fig. 4a is a schematic structural diagram when the shape of the encapsulating resin 112 is a pyramid.
  • Fig. 4b is a schematic diagram of the structure when the encapsulating resin 112 is a circular table.
  • the encapsulating resin 112 includes an upper surface S1 and a lower surface S2, where the upper surface S1 corresponds to the light-emitting surface and the lower surface S2 corresponds to the light-receiving surface.
  • the upper surface S1 and the lower surface S2 can be rectangular or square.
  • the upper surface S1 and the lower surface S2 are proportional rectangles or squares, and the area of the upper surface S1 needs to be larger than that of the lower surface S2, so that the cut surface of the packaging resin 112 along the light emitting direction of the LED chip 111 is an inverted trapezoid.
  • the area ratio of the upper surface S1 to the lower surface S2 is k, where 1 ⁇ k ⁇ 3.75, preferably 1.5 ⁇ k ⁇ 2.5.
  • the encapsulating resin 112 When the encapsulating resin 112 has a round table structure, the encapsulating resin 112 includes an upper surface S1 and a lower surface S2, wherein the upper surface S1 corresponds to a light emitting surface and the lower surface S2 corresponds to a light incident surface, wherein the upper surface S1 and the lower surface S2 may be oval, Round.
  • the upper surface S1 and the lower surface S2 are proportionally elliptical or circular, and the area of the upper surface S1 needs to be larger than the area of the lower surface S2, so that the cut surface of the packaging resin 112 along the light emitting direction of the LED chip 111 is an inverted trapezoid, where
  • the area ratio of the upper surface S1 to the lower surface S2 is k, where 1 ⁇ k ⁇ 3.75, preferably 1.5 ⁇ k ⁇ 2.5.
  • the encapsulating resin 112 may be formed of any transparent resin material.
  • the encapsulating resin 112 is an electrically insulating transparent resin.
  • FIG. B is a schematic diagram of the illumination intensity of the LED light source when the area ratio k of the upper surface and the lower surface of the encapsulating resin is 1.
  • the emitted light of the LED light source is mainly concentrated in a small angle range.
  • the illumination range of the LED light source in the corresponding pixel area is too small than the pixel area, which makes the LED light source have a large unlit area at the edge of the corresponding pixel area, resulting in low pixel filling efficiency and strong graininess of the LED display screen.
  • Figure c is a schematic diagram of the illumination intensity of an LED light source when the area ratio k of the upper and lower surfaces of the sealing resin is 3.75.
  • the light emitted by the LED light source is relatively uniform.
  • the illumination range of the LED light source in the corresponding pixel area is relatively uniform. Therefore, the edge illuminance and the central point illuminance of the LED light source in the corresponding pixel area do not change much, which causes the LED light source to illuminate more light in the adjacent pixel area, causing serious crosstalk of the LED display screen.
  • Figure a is a schematic diagram of the illuminance of an LED light source when the area ratio k of the upper surface and the lower surface of the sealing resin is 2; at this time, the output light intensity of the LED light source changes relatively smoothly in the corresponding pixel area, and the illuminance in the pixel range is from the center area to The edge area gradually decreases, where the illuminance of the edge area is 10% of the illuminance of the central area, and because the illuminance of adjacent pixel edges is taken into account, that is, the pixel edge of the LED display screen will not be caused by the LED light source not being illuminated.
  • the problem of low pixel fill rate and strong graininess does not cause the problem of excessive crosstalk of light between adjacent pixels, which affects the display effect.
  • the LED chip 111 is grown on a substrate by a gas phase or liquid phase method.
  • the LED chip 111 may be packaged by a single LED chip, or may be packaged by a plurality of LED chips.
  • the LED chip 111 includes: at least one red LED chip, at least one blue LED chip, and at least one green LED chip.
  • the LED chip 111 includes a red LED chip, a blue LED chip, and a green LED chip which are simultaneously packaged in a transparent resin.
  • the LED light source further includes a reflective layer 113 disposed on the outer side of the encapsulating resin 112 and attached adjacent to the encapsulating resin 112.
  • the thickness of the reflective layer 113 is consistent with the thickness of the encapsulating resin 112.
  • the combined surface is a reflective surface, and the reflective layer 113 plays a role of reflecting and condensing the LED high-angle light.
  • the material of the reflective layer 43 is usually one or more of ceramics, metals, and resins. The reflectance of the reflective layers of different materials is different. The reflectivity of the reflective layer 43 of the present application ranges from 50% to 90%.
  • the LED light source in the LED display screen provided in this application includes an LED chip and a packaging resin covering the surface of the LED chip, wherein the thickness of the packaging resin ranges from 1 mm to 3 mm.
  • the present application achieves a high fill factor of light while compressing the light exit angle of the LED light source, significantly reducing light crosstalk between pixels, thereby improving the display effect of the LED display screen.
  • FIG. 5 is a schematic structural diagram of a second embodiment of the LED light source in the LED display screen of the present application.
  • the difference between this embodiment and the first embodiment is that the cut surface of the packaging resin 112 along the light emitting direction of the LED chip 111 is inverted.
  • the contact surface between the encapsulating resin 112 and the reflective layer 113 in the second embodiment is a parabola.
  • the parabolic structure is more conducive to the collection and collection of light emitted from the LED chip 111, and for the LED chip 111 (similar to a point light source) with a small light emitting area, the The parabolic structure can play the role of collimating light.
  • this embodiment increases the thickness of the encapsulating resin to achieve a high fill rate of the light while compressing the light exit angle of the LED light source, which significantly reduces the crosstalk between pixels.
  • This embodiment is different from the first embodiment.
  • the cross-section of the encapsulating resin along the light emitting direction of the LED chip is inverted, which is more conducive to the collection and collection of the emitted light and further improves the display effect of the LED display screen.
  • FIG. 6 is a schematic structural diagram of a third embodiment of the LED light source in the LED display screen of the present application.
  • the LED light source of this embodiment includes not only the LED chip 111 but also a thickness covering the surface of the LED chip 111 in a range of 1 mm to 3 mm.
  • a black light absorbing layer 114 is further provided on the substrate on at least one side of the LED chip 111, and the encapsulating resin 112 covers the LED chip 111 and the black light absorbing layer 114.
  • a black light absorbing layer 114 is formed on a substrate around the LED chip 111 by a process such as photolithography and evaporation.
  • the black light absorbing layer 114 By applying the black light absorbing layer 114 in this application, most of the incident ambient light is absorbed by the black light absorbing layer 114, and the light in the wavelength range of the primary color light emitted by the LED chip 111 is almost totally reflected, which effectively improves the LED display screen. Contrast improves display effect.
  • the number of the black light absorbing layers 114 is multiple, and the multiple black light absorbing layers 114 are distributed around the LED chip 111, for example, in a rectangular array or a circular array.
  • the black light-absorbing layer 114 has a square shape, which improves the overall light-absorbing effect.
  • the black light-absorbing layer 114 may also be circular, polygonal, or other shapes, as long as the light-absorbing effect of the black light-absorbing layer 114 can be satisfied.
  • the cutting surface of the encapsulating resin 112 along the light emitting direction of the LED chip 111 is an inverted trapezoid or an inverted arch.
  • the schematic diagram of the LED light source structure is shown in FIG. 7.
  • the parabolic structure of the encapsulating resin 112 is more conducive to collecting the light emitted from the LED chip 111, and for the LED chip 111 (similar to a point light source) with a small light emitting area, the parabolic structure can play a role of collimating light.
  • this embodiment further increases the ratio of the upper plane size to the lower plane size of the encapsulating resin. That is, when the lateral dimension of the LED chip is unchanged, the thickness of the packaging resin is increased by about 10 times compared to the existing packaging structure, which effectively improves the aspect ratio of the packaging resin, so that the light emitted by the LED chip is greatly converged to the corresponding pixel unit. Diffusion film.
  • this embodiment by adding a black light absorbing layer to the LED light source, the incident ambient light is effectively absorbed and the contrast is improved.
  • FIG. 8 is a schematic structural diagram of a fourth embodiment of an LED light source in a display screen of the present application.
  • the LED light source includes an LED chip 111 and a packaging resin 112 covering the surface of the LED chip 111.
  • the thickness of the encapsulating resin 112 ranges from 1 mm to 3 mm.
  • the reflective layer 113 is disposed outside the encapsulating resin 112 and is attached adjacent to the encapsulating resin 112.
  • the thickness of the reflective layer 113 is the same as the thickness of the encapsulating resin 112.
  • the cut surface of the encapsulation resin 112 along the light emitting direction of the LED chip 111 is trapezoidal or inverted.
  • the schematic diagram of the LED light source structure is shown in FIG. 9.
  • the encapsulating resin 111 in order to make the LED light source have a narrower wavelength range, includes light absorbing particles.
  • the light absorbing particles will absorb light of some wavelengths but not other light. The choice is related to the wavelength of the absorbed light and can be deduced via Beer's Law.
  • the light absorbing particles are preferably at least one of colored glass particles and metal nanoparticles, wherein the concentration of the light absorbing particles is 1 to 200 mol / cm 3 .
  • FIG. 10 is a schematic diagram of the wavelength change after the light-absorbing particles are added to the encapsulating resin.
  • the dotted line represents the wavelength of the encapsulating resin without light-absorbing particles.
  • the solid line represents the wavelength of the encapsulating resin after adding the light-absorbing particles.
  • the light absorbing particles After the light absorbing particles, the light absorbing particles only absorb the narrow-band spectrum corresponding to the light emitted by the LED chip, and do not absorb the main light emission spectrum of the light emitted by the LED chip, so that the light emitted by the LED chip 111 has a narrower wavelength range, which helps to expand the LED display.
  • the color gamut of the screen is a schematic diagram of the wavelength change after the light-absorbing particles are added to the encapsulating resin.
  • the dotted line represents the wavelength of the encapsulating resin without light-absorbing particles.
  • the solid line represents the wavelength of the encapsulating resin after adding the light-absorbing particles.
  • the light absorbing particles only absorb the narrow-band spectrum
  • a black light absorbing layer 114 may be provided on at least one side of the LED chip 111, and the encapsulating resin 112 covers the LED chip 111 and the black light absorbing layer 114, as shown in FIGS. 11 and 12, and FIG. 11 8 is a schematic view of the structure after adding the black light absorbing layer in FIG. 8, and FIG. 12 is a schematic view of the structure after adding the black light absorbing layer in FIG. 9.
  • the black light absorbing layer 114 most of the incident ambient light is absorbed by the black light absorbing layer 114. The light in the wavelength range of the primary colors emitted by the LED chip 111 is almost totally reflected, which effectively improves the contrast of the LED display screen and improves the display effect. .
  • the LED light source provided in this application includes an LED chip and a packaging resin covering the surface of the LED chip, wherein the thickness of the packaging resin ranges from 1 mm to 3 mm.
  • the encapsulating resin in this embodiment further includes light absorbing particles. These light absorbing particles make the emitted light from the LED light source have a narrower wavelength range, which helps to expand the color gamut of the LED display screen.
  • FIG. 13 is a schematic structural diagram of a fifth embodiment of an LED light source in an LED display screen of the present application.
  • the LED display screen 13 includes LED light sources 131 arranged in an array, and the diffusion film 133 is disposed opposite to the LED light source 131.
  • the diffusion film 133 may be an integrally formed film equivalent to the area of the LED display screen, or may be a plurality of Diffusion film is a spliced film.
  • the diffusion angle of the diffusion film 133 to the light emitted from the LED light source can also be distributed in regions.
  • the diffusion film 133 has a larger diffusion angle in the area corresponding to the light emitting center of the LED light source and in the area corresponding to the light emitting edge of the LED light source.
  • the diffusion angle is small to achieve a more optimized illumination distribution.
  • a light-shielding frame 132 is disposed between adjacent LED light sources 131, and the light-shielding frame 132 is disposed between the LED light source 131 array and the diffusion film 132.
  • the light shielding frame 132 is placed between the LED light source array and the diffusion film, and can block the crosstalk light between adjacent LED light sources 131.
  • the light shielding frame 132 is made of plastic such as polymethyl methacrylate, polyacrylonitrile, polypropylene, and polychloride Ethylene, polyvinyl chloride, etc., and optionally coating an absorption layer on the side wall of the light shielding frame 132 opposite to the LED light source 131, or a scattering layer such as titanium dioxide, barium sulfate and other white scattering particles, for each pixel
  • a metal reflective layer or a diffuse reflection layer can also be coated to reflect the light in each pixel.
  • the LED display screen provided in this embodiment is provided with a shading frame between adjacent LED light sources to further block crosstalk light from adjacent LED light sources, significantly reducing crosstalk between pixels, and further improving LED display effect.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

一种LED显示屏（1），包括多个阵列分布的LED光源（11，131），该LED光源（11，131）包括LED芯片（111）以及覆盖在LED芯片（111）表面的封装树脂（112），其中，封装树脂（112）的厚度（h）范围为1mm-3mm。通过增加封装树脂（112）的厚度（h），进一步对LED光源（11，131）出射的大角度光进行反射，以压缩LED光源（11，131）的光出射角，进而减小各像素间的光线串扰。

Description

一种LED显示屏 技术领域
本申请涉及显示技术领域，特别是涉及一种LED显示屏。
背景技术
现有的LED显示屏是由发光二极管组装或封装在一起形成像素点阵，并通过不同的电压驱动控制各发光二极管芯片发出不同亮度和颜色的光，以实现图像显示。LED显示屏具有高亮度、寿命高、性能稳定性好等优点，广泛用于户外广告宣传，由于观看距离较远，尽管LED显示屏像素点阵间距较大，仍不影响其显示效果。近年来，随着LED显示屏的应用越来越广泛，LED显示屏也逐渐投入室内显示应用，室内显示应用的观看距离相对较短，使得LED显示屏的一些缺点被放大，比如近距离观看颗粒感太强、光线填充率低、出光不均匀等。
为解决以上显示缺陷，目前是增加扩散膜以解决像素点阵之间的光线填充率及出光不均匀等问题，但由于在增加了扩散膜后，使得发光二极管的光出射角度增大，进一步增加了各像素点阵之间的光线串扰，即单个像素内的发光二极管大角度光线入射到相邻像素内，严重影响显示效果。
发明内容
本申请主要解决的技术问题是提供一种LED显示屏，能够减小LED芯片光出射角，减少相邻像素间的光线串扰。
为解决上述技术问题，本申请采用的第一个技术方案是：提供了一种LED显示屏，该显示屏包括多个阵列分布的LED光源，LED光源包括LED芯片以及覆盖在LED芯片表面的封装树脂，其中，封装树脂的厚度范围为1mm-3mm。
其中，封装树脂沿LED芯片出光方向的切面为倒梯形。
其中，封装树脂沿LED芯片出光方向的切面为倒拱形。
其中，封装树脂包括上表面和下表面，其中上表面和下表面的面积比为k，其中1<k<3.75，优选1.5<k<2.5。
其中，封装树脂包括光吸收粒子，其中光吸收粒子的浓度为1～200mol/cm 3。
其中，光吸收粒子包括有色玻璃粒子以及金属纳米颗粒中的至少一种。
其中，LED光源还包括设置在封装树脂外侧，与封装树脂相邻贴合的反射层，反射层的反射率范围为50％～90％。
其中，LED芯片至少一侧还设置有黑色吸光层，封装树脂覆盖LED芯片以及黑色吸光层。
其中，相邻LED光源之间设置有遮光架。
其中，遮光架相对于LED光源的侧壁上涂覆有吸收层或者散色层。
其中，包括与LED光源相对设置的扩散膜，扩散膜为一体成型膜或拼接膜。
其中，扩散膜的不同区域对LED光源出射光的扩散角度角度不同。
本申请的有益效果是：本申请提供的LED显示屏包括阵列排布的LED光源，该LED光源包括LED芯片以及覆盖在LED芯片表面的封装树脂，其中，封装树脂的厚度范围为1mm-3mm。本申请通过增加封装树脂的厚度，进一步对LED光源出射的大角度光进行反射，以压缩LED光源的光出射角，进而减小各像素间的光线串扰。
附图说明
图1是本申请LED显示屏一实施例结构示意图；
图2是本申请LED显示屏中LED光源第一实施例结构示意图；
图3a是常规封装厚度为0.3mm时LED光源发散角分布示意图；
图3b是本申请封装厚度为3mm时的LED光源发散角分布示意图；
图4a是本申请封装树脂形状为棱台时结构示意图；
图4b是本申请封装树脂形状为圆台时结构示意图；
图5是本申请LED显示屏中LED光源第二实施例结构示意图；
图6是本申请LED显示屏中LED光源第三实施例结构示意图；
图7是本申请第三实施例中封装树脂沿LED芯片出光方向的切面为倒拱形时结构示意图；
图8是本申请LED显示屏中LED光源第四实施例结构示意图；
图9是本申请第四实施例中封装树脂沿LED芯片出光方向的切面为倒拱形时结构示意图；
图10是本申请第四实施例中在封装树脂中加入光吸收粒子后波长变化示意图；
图11是图8中在LED光源中加入黑色吸光层后的结构示意图；
图12是图9中在LED光源中加入黑色吸光层后的结构示意图；
图13是本申请第五实施例的LED显示屏结构示意图；
图14是本申请LED显示屏的上表面面与下表面的面积比与LED光源出光角分布示意图。
具体实施方式
本申请提供一种LED显示屏，为使本申请的目的、技术方案和技术效果更加明确、清楚，以下对本申请进一步详细说明，应当理解此处所描述的具体实施条例仅用于解释本申请，并不用于限定本申请。
实施例一
为了解决LED显示屏中LED光源之间的光线串扰，提高显示屏的显示效果，本申请提供了一种LED显示屏，如图1所示，图1是本申请LED显示屏一实施例结构示意图，该LED显示屏1包括多个阵列排布的LED光源11。
如图2所示，图2是本申请LED显示屏中LED光源一实施例结构示意图，本实施例中该LED光源包括LED芯片111以及覆盖在LED芯片111表面的封装树脂112，以及围绕封装树脂112相邻设置的反射层113，其中，封装树脂112的厚度h范围为1mm-3mm。优选的，封装树 脂112的厚度h为2mm。本申请相较于现有技术，在LED芯片横向尺寸维持不变的情况下，封装树脂112的厚度提高10倍左右，有效的提高了封装树脂112的纵横比，因此增加了封装树脂112上平面尺寸a与下平面尺寸b的比值，使得LED芯片111出射的大角度光线通过反射层113尽可能地汇聚到本像素单元对应的扩散膜上。
进一步如图3a和图3b所示，图3a是常规的封装厚度为0.3mm时的LED光源发散角分布示意图，由于封装树脂的厚度较薄，只有非常大角度(例如正负85°)的光线才会被反射层113反射，因此这种LED光源可近似为朗伯光源，较多出射光线依然会在大立体角空间辐射，很容易引起各像素之间的光线串扰。如图3b所示，图3b为封装厚度为3mm时的LED光源发散角分布示意图，当封装树脂42的厚度提高到10倍左右时，较多大角度光线被反射层反射以小角度出射，使得LED光源的发光角度缩小到50°以内。
进一步如图4a和4b所示，封装树脂112可以为棱台或圆台结构，图4a为封装树脂112形状为棱台时结构示意图，图4b为封装树脂112形状为圆台时结构示意图，当封装树脂112为棱台结构时，该封装树脂112包括上表面S1，以及下表面S2，其中上表面S1对应出光面、下表面S2对应入光面，其中上表面S1和下表面S2可以为矩形、正方形，优选上表面S1和下表面S2为成比例的矩形或正方形，且上表面S1的面积需大于下表面S2的面积，使得封装树脂112沿LED芯片111出光方向的切面为倒梯形。其中上表面S1与下表面S2的面积比为k，其中1<k<3.75，优选1.5<k<2.5。当封装树脂112为圆台结构时，封装树脂112包括上表面S1，以及下表面S2，其中上表面S1对应出光面、下表面S2对应入光面，其中上表面S1和下表面S2可以为椭圆、圆形。优选的，上表面S1和下表面S2为成比例的椭圆或圆形，且上表面S1的面积需大于下表面S2的面积，使得封装树脂112沿LED芯片111出光方向的切面为倒梯形，其中上表面S1与下表面S2的面积比为k，其中1<k<3.75，优选1.5<k<2.5。进一步封装树脂112可以由任意透明的树脂材料形成，优选的，封装树脂112为电绝缘的透明树脂。
进一步的，如图14所示，b图为封装树脂的上表面与下表面的面积比k为1时的LED光源照度示意图，此时的LED光源的出射光主要聚集在一个较小的角度范围内，对应的，LED光源在对应像素区域的照度范围过于小于像素区域，使得LED光源在对应像素区域的边缘存在较大的未照到区域，导致LED显示屏的像素填充效率低，颗粒感强。图c为封装树脂的上表面和下表面的面积比k为3.75时的LED光源照度示意图，此时的LED光源的出射光相对比较均匀，对应的，LED光源在对应像素区域的照度范围较为均匀，使得LED光源在对应像素区域的边缘照度与中心点照度变化不大，导致LED光源较多照度范围的光射入相邻的像素区域，造成LED显示屏的光线串扰严重。图a为封装树脂的上表面与下表面的面积比k为2时的LED光源照度示意图，此时的LED光源的出射光照度在对应像素区域的变化较为平稳，像素范围内的照度从中心区域向边缘区域逐渐递减，其中边缘区域的照度为中心区域照度的10％，又因为考虑到相邻像素边缘之间的照度叠加，即不会造成LED显示屏的像素边缘因LED光源未照到引起的像素填充率低，颗粒感强的问题，又不会造成相邻像素之间的光线串扰过于严重，影响显示效果的问题。
LED芯片111通过气相或液相法生长在衬底上，该LED芯片111可以由单颗LED芯片封装而成，也可以由多颗LED芯片封装而成。当LED芯片111由多颗芯片封装时，该LED芯片111包括：至少一个红色LED芯片、至少一个蓝色LED芯片和至少一个绿色LED芯片。优选的，LED芯片111包括一个红色LED芯片、一个蓝色LED芯片和一个绿色LED芯片同时封装在透明树脂中。
进一步的，该LED光源还包括设置在封装树脂112外侧，与封装树脂112相邻贴合的反射层113，反射层113的厚度与封装树脂112的厚度一致，封装树脂112与反射层113的贴合面为反射面，反射层113对LED大角度光线起到反射汇聚作用。反射层43材料通常为陶瓷、金属和树脂中的一种或多种等，不同材料的的反射层的反射率不同，本申请反射层43的反射率范围为50％～90％。
区别于现有技术，本申请提供的LED显示屏中的LED光源包括LED芯片以及覆盖在LED芯片表面的封装树脂，其中，封装树脂的厚度范围为1mm-3mm。本申请通过增加封装树脂的厚度，实现在光线高填充率的同时，压缩LED光源的光出射角，显著减小了像素间光线串扰，进而提高LED显示屏的显示效果。
实施例二
如图5所示，图5是本申请LED显示屏中LED光源第二实施例结构示意图，本实施例与实施例一的区别在于封装树脂112沿LED芯片111出光方向的切面为倒拱形。实施例二封装树脂112和反射层113的接触面为抛物面，该抛物面结构更有利于对LED芯片111出射光线的汇聚收集，并且对于发光面积较小的LED芯片111(类似于点光源)，该抛物面结构可以起到准直光线的作用。
区别于现有技术，本实施例通过增加封装树脂的厚度，实现在光线高填充率的同时，压缩LED光源的光出射角，显著减小了像素间光线串扰，区别于实施例一，本实施例中，封装树脂沿发光二极管芯片出光方向的切面为倒拱形，更有利于对出射光线的汇聚收集，进一步提高LED显示屏的显示效果。
实施例三
在上述任一实施方式中，为了吸收入射的环境光线，提高对比度，本实施例在LED芯片的至少一侧的基板上设置黑色吸光层。如图6所示，图6为本申请LED显示屏中LED光源第三实施例结构示意图，本实施方式的LED光源不仅包括LED芯片111以及覆盖在LED芯片111表面的厚度范围为1mm-3mm的封装树脂112，以及与封装树脂层112相邻设置的反射层113。本实施例与上述任一实施例的区别是，在LED芯片111的至少一侧的基板上还设置有黑色吸光层114，封装树脂112覆盖LED芯片111以及黑色吸光层114。优选的，在对LED芯片进行树脂封装前，通过光刻、蒸镀等工艺形成黑色吸光层114在LED芯片111的四周的基板上。
本申请通过设置该黑色吸光层114，使得入射的大部分环境光线中 被黑色吸光层114吸收，而LED芯片111发出的基色光线波长范围的光线几乎被全反射，有效的提高了LED显示屏的对比度，提升了显示效果。黑色吸光层114的数量为多个，多个黑色吸光层114分布在LED芯片111的四周，例如，呈矩形阵列或者环形阵列分布。本实施例中，黑色吸光层114呈方形，提升整体的吸光效果。当然在其他实施例中，黑色吸光层114也可以呈圆形或多边形或其他形状，只要能够满足黑色吸光层114的吸光效果即可。
可选的，封装树脂112沿LED芯片111出光方向的切面为倒梯形或者倒拱形，当封装树脂112沿LED芯片111出光方向的切面为倒拱形时，LED光源结构示意图如图7所示，所述封装树脂112的抛物面结构更有利于对LED芯片111出射光线的收集，并且对于发光面积较小的LED芯片111(类似于点光源)，该抛物面结构可以起到准直光线的作用。
区别于现有技术，本实施方式通过增加封装树脂的厚度，进而增加了封装树脂上平面尺寸与下平面尺寸的比值。即在LED芯片横向尺寸维持不变的情况下，封装树脂的厚度比现有封装结构提高10倍左右，有效的提高了封装树脂的纵横比，使得LED芯片出射光线极大地汇聚到本像素单元对应的扩散膜上。区别于上述任一实施方式，本实施例通过在LED光源中增加黑色吸光层，有效吸收了入射的环境光线，提高对比度。
实施例四
在上述任一实施方式中，为了使LED光源有更窄的波长范围，本实施例在封装树脂中加入光吸收粒子。如图8所示，图8是本申请显示屏中LED光源第四实施例结构示意图，在本实施例中，该LED光源包括LED芯片111以及覆盖在LED芯片111表面的封装树脂112，其中，封装树脂112的厚度范围为1mm-3mm，反射层113设置在封装树脂112外侧，与封装树脂112相邻贴合，反射层113的厚度与封装树脂112的厚度一致。可选的，封装树脂112沿LED芯片111出光方向的切面为梯形或者倒拱形，当封装树脂112沿LED芯片111出光方向的切面为倒拱形时，LED光源结构示意图如图9所示。
在本实施例中，为使LED光源有更窄的波长范围，封装树脂111 中包括有光吸收粒子，光吸收粒子会吸收某些波长的光而不吸收另一些波长的光，光吸收粒子的选择与所吸收的光的波长有关，可以经由比尔兰伯特定律推算。在本实施例中，光吸收粒子优选有色玻璃粒子以及金属纳米颗粒中的至少一种，其中所述光吸收粒子的浓度为1～200mol/cm 3。
如图10所示，图10是封装树脂中加入光吸收粒子后波长变化示意图，其中虚线代表封装树脂未加光吸收粒子的波长示意图，实线代表封装树脂加入光吸收粒子后的波长示意图，加入光吸收粒子后，光吸收粒子只吸收对应LED芯片出射光的窄带光谱，不吸收LED芯片出射光的主要发光光谱，使得LED芯片111的出射光有更窄的波长范围，有助于扩大LED显示屏的色域。
进一步的，在本实施例中，还可在LED芯片111的至少一侧设置有黑色吸光层114，封装树脂112覆盖LED芯片111以及黑色吸光层114，如图11和图12所示，图11为图8中加入黑色吸光层后的结构示意图，图12为图9中加入黑色吸光层后的结构示意图，通过设置该黑色吸光层114，使得入射的大部分环境光线中被黑色吸光层114吸收，而LED芯片111发出的基色光线波长范围的光线几乎被全反射，有效的提高了LED显示屏的对比度，提升了显示效果。。
区别于现有技术，本申请提供的LED光源包括：LED芯片以及覆盖在LED芯片表面的封装树脂，其中，封装树脂的厚度范围为1mm-3mm。本申请通过增加封装树脂的厚度，实现在光线高填充率的同时，压缩LED光源的光出射角，显著减小了像素间光线串扰。区别于上述任一实施例，本实施例中的封装树脂还包括光吸收粒子，这些光吸收粒子使得LED光源的出射光有更窄的波长范围，有助于扩大LED显示屏的色域。
实施例五
在上述任一实施方式中，为了进一步隔绝相邻LED光源间串扰光线，本实施例在相邻LED光源之间设置遮光架。如图13所示，图13是本申请LED显示屏中LED光源第五实施例结构示意图。在本实施例中LED显示屏13包括阵列排布的LED光源131，扩散膜133与LED光源131相对设置，扩散膜133可以是与LED显示屏面积相当的一体成型膜，也 可以是通过多个扩散膜拼接起来的膜，其中扩散膜133对LED光源出射的光的扩散角度也可以区域分布，例如扩散膜133在对应LED光源发光中心的区域扩散角度较大，在对应LED光源发光边缘的区域扩散角度较小，以实现更优化的照度分布，相邻LED光源131之间设置有遮光架132，遮光架132设置在LED光源131阵列和扩散膜132之间。
关于LED光源131的具体结构，请结合上述实施一到实施例四的附图及相关的文字说明，已详尽描述，在此不再赘述。
遮光架132放置在LED光源阵列和扩散膜之间，可以遮挡相邻LED光源131之间的串扰光线，遮光架132材质为塑料如聚甲基丙烯酸甲酯、聚丙烯腈、聚丙烯、聚氯乙烯、聚氯乙烯等，且可选择性的在遮光架132与LED光源131相对的侧壁上涂覆吸收层，也可以涂覆散射层例如二氧化钛，硫酸钡等白色散射颗粒，对每个像素内的光线进行散射，也可以涂覆金属反射层或漫反射层，对每个像素内的光线进行反射。
区别于上述任一实施例，本实施例提供的LED显示屏，在相邻LED光源之间设置遮光架，进一步遮挡了相邻LED光源的串扰光线，显著减小像素间光线串扰，进一步提升了LED显示屏的显示效果。
以上所述仅为本申请的实施方式，并非因此限制本申请的专利保护范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (12)

  1. 一种LED显示屏，其特征在于，所述LED显示屏包括多个阵列分布的LED光源，所述LED光源包括LED芯片以及覆盖在所述LED芯片表面的封装树脂，其中，所述封装树脂的厚度范围为1mm-3mm。
  2. 根据权利要求1所述的LED显示屏，其特征在于，所述封装树脂沿所述LED芯片出光方向的切面为倒梯形。
  3. 根据权利要求1所述的LED显示屏，其特征在于，所述封装树脂沿所述LED芯片出光方向的切面为倒拱形。
  4. 根据权利要求1所述的LED显示屏，其特征在于，所述封装树脂包括上表面和下表面，其中上表面和下表面的面积比为k，其中1<k<3.75，优选1.5<k<2.5。
  5. 根据权利要求1～4任一项所述的LED显示屏，其特征在于，所述封装树脂包括光吸收粒子，其中所述光吸收粒子的浓度为1～200mol/cm 3。
  6. 根据权利要求5所述的LED显示屏，其特征在于，所述光吸收粒子包括有色玻璃粒子以及金属纳米颗粒中的至少一种。
  7. 根据权利要求1～4任一项所述的LED显示屏，其特征在于，所述LED光源还包括设置在所述封装树脂外侧，与所述封装树脂相邻贴合的反射层，其中所述反射层的反射率范围为50％～90％。
  8. 根据权利要求1～4任一项所述的LED显示屏，其特征在于，所述LED芯片至少一侧的基板上还设置有黑色吸光层，所述封装树脂覆盖所述LED芯片以及所述黑色吸光层。
  9. 根据权利要求1～4任一项所述的LED显示屏，其特征在于，相邻所述LED光源之间设置有遮光架。
  10. 根据权利要求9所述的LED显示屏，其特征在于，所述遮光架相对于所述LED光源的侧壁上涂覆有光吸收层、散射层或反射层。
  11. 根据权利要求9所述的LED显示屏，其特征在于，包括与所述LED光源相对设置的扩散膜，所述扩散膜为一体成型膜或拼接膜。
  12. 根据权利要求11所述的LED显示屏，其特征在于，所述扩散膜 的不同区域对所述LED光源出射光的扩散角度不同。
PCT/CN2019/100477 2018-09-28 2019-08-14 一种led显示屏 WO2020063153A1 (zh)

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