WO2020062522A1 - 背光装置及其制造方法 - Google Patents

背光装置及其制造方法 Download PDF

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Publication number
WO2020062522A1
WO2020062522A1 PCT/CN2018/117233 CN2018117233W WO2020062522A1 WO 2020062522 A1 WO2020062522 A1 WO 2020062522A1 CN 2018117233 W CN2018117233 W CN 2018117233W WO 2020062522 A1 WO2020062522 A1 WO 2020062522A1
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Prior art keywords
emitting diode
light emitting
layer
light
backlight device
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Ceased
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PCT/CN2018/117233
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English (en)
French (fr)
Inventor
杨勇
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/476,568 priority Critical patent/US11018118B2/en
Publication of WO2020062522A1 publication Critical patent/WO2020062522A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133605—Direct backlight including specially adapted reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133611—Direct backlight including means for improving the brightness uniformity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • the invention relates to the field of display, in particular to a backlight device and a method for manufacturing the same.
  • Mini LED sub-millimeter light emitting diode
  • OLED organic light emitting diode
  • Mini LED is a light-emitting diode with a size between traditional LED and Micro LED. It is a strong competitor of OLED display technology in the future market. It has high brightness, can be manufactured in flexible On curved substrates, it can be applied to many advantages such as high dynamic contrast display technology, narrow bezel display technology, and special-shaped display technology, which have become market research hotspots.
  • Mini LED still has some gaps in terms of light emission efficiency, light mixing uniformity, cost, etc. compared with conventional backlight products and OLED display technology.
  • the main purpose of the present invention is to provide a backlight device and a manufacturing method thereof, which can reduce the internal light return loss and improve the light emitting efficiency of the surface light source as a whole.
  • the present invention provides a backlight device including: a substrate; a light emitting diode layer provided on the substrate and including a plurality of light emitting diode chips spaced apart; and a band-pass filter A sheet is provided on the light emitting diode layer, wherein the band-pass filter is provided with an opening at a position corresponding to the light emitting diode chip.
  • the backlight device further includes at least one diffusion layer, and the at least one diffusion layer is disposed on the band-pass filter and is received through the opening of the band-pass filter.
  • the light emitted from the light emitting diode layer makes the light dispersed and mixed.
  • the light emitting diode chip includes red, green, and blue light emitting diode chips.
  • the substrate includes at least a metal wire layer and an insulating layer.
  • the backlight device further includes at least one brightness enhancement film layer, and the at least one brightness enhancement film layer is disposed on the at least one diffusion layer.
  • the light emitting diode chip is a sub-millimeter light emitting diode chip having a size between 100 and 200 microns.
  • the light emitting diode layer is coated with a transparent filling layer, which fills a gap between the spaced light emitting diode chips and has the same height as the light emitting diode chips.
  • the band-pass filter is prepared on a high-temperature-resistant transparent plastic film.
  • the present invention further provides a method for manufacturing a backlight device as described above, including the following steps: providing a substrate; providing a light emitting diode layer on the substrate, the light emitting diode layer including a plurality of light emitting diodes arranged at intervals A diode chip; and a band-pass filter is provided on the light-emitting diode layer, wherein the band-pass filter is provided with an opening at a position corresponding to the light-emitting diode chip.
  • the method for manufacturing the backlight device further includes the following steps: forming at least one diffusion layer on the band-pass filter; and forming at least one brightness enhancement film layer on the at least one diffusion On the floor.
  • the invention mainly adds a band-pass filter above the light-emitting diode layer to reduce the light return loss inside the Mini LED device and to improve the light emitting efficiency of the surface light source as a whole.
  • FIG. 1 is a schematic cross-sectional view of a backlight device according to an embodiment of the present invention.
  • FIG. 2A to 2D are schematic diagrams of a manufacturing process of the backlight device of FIG. 1.
  • FIG. 3 is a schematic diagram of a manufacturing process of a band-pass filter of a backlight device according to an embodiment of the present invention.
  • FIG. 4 is a flowchart of a manufacturing method of a backlight device according to an embodiment of the invention.
  • the backlight device of the present invention can be mainly used as a backlight source of a general flat display screen.
  • FIG. 1 is a schematic cross-sectional view of a backlight device according to an embodiment of the present invention.
  • the backlight device mainly includes a substrate 10, a light emitting diode layer 20, and a band-pass filter 30, and may further include at least one diffusion layer 40 and at least one brightness enhancement film layer 50.
  • the substrate 10 includes at least a metal wire layer and an insulating layer.
  • the substrate 10 may include a copper wire layer, a polyimide film layer, and a white oil layer, wherein the white oil layer is used to reflect the blue light passing through the band-pass filter back to the at least one diffusion. Floor.
  • the light emitting diode layer 20 is disposed on the substrate 10 and includes a plurality of light emitting diode chips (200, 201, 202) disposed at intervals.
  • the light-emitting diode chip (200, 201, 202) may include red, green, and blue sub-millimeter light-emitting diode (Mini LED) chips having a size between 100 and 200 microns, and since the light-emitting diode layer 20 Red, green and blue sub-millimeter light-emitting diode chips are used to provide red, green, and blue light, respectively.
  • the light-emitting diode layer 20 may not have a phosphor layer or a quantum dot film layer, and does not need to be illuminated by a blue sub-millimeter light-emitting diode chip Exciting the phosphor layer or the quantum dot film layer to convert it into other colored light, thereby avoiding the photon loss during the excitation process of the phosphor layer or the quantum dot film layer, and improving the light emitting efficiency of the surface light source as a whole.
  • the light emitting diode layer 20 is further coated with a transparent filling layer 203, which fills the gap between the spaced light emitting diode chips (200, 201, 202) and communicates with the light emitting diode.
  • the heights of the chips (200, 201, 202) are the same, so that the surface of the light-emitting diode layer 20 can be made flat, which is beneficial to the subsequent setting of the film layer.
  • the band-pass filter 30 is disposed on the light-emitting diode layer 20.
  • the band-pass filter 30 is preferably prepared on a high-temperature-resistant transparent plastic film.
  • the band-pass filter 30 is provided with an opening at a position corresponding to the light-emitting diode chip (200, 201, 202), and the surface of the band-pass filter 30 allows blue light to pass through, but reflects red Light and green light.
  • the at least one diffusion layer 40 is disposed on the band-pass filter 30 and receives light emitted from the light-emitting diode layer 20 through an opening of the band-pass filter 30. For dispersing and mixing the light. Since the light is dispersed and mixed, the at least one diffusion layer 40 reflects a part of the received light back to the band-pass filter 30. At this time, the surface of the band-pass filter 30 allows blue light in the light reflected by the at least one diffusion layer 40 to pass through, and reflects red and green light in the reflected light back to the light again. At least one diffusion layer 40.
  • the at least one brightness enhancement film layer 50 is disposed on the at least one diffusion layer 40.
  • the backlight device includes upper and lower brightness enhancement film layers (50, 51), which functions to accumulate light within a certain angle range and increase the front brightness of the surface light source.
  • the red, green, and blue LED chips Since the light emitted by the red, green, and blue LED chips does not pass through the band-pass filter 30 and directly enter the lower surface of the diffusion layer 40, some red, green, and blue three-color light is reflected on the lower surface of the diffusion layer 40. After reflection, the blue light passes through the band-pass filter 30 and the white oil layer of the substrate 10, and then re-enters the diffusion layer 40 through secondary reflection. Green and red light are on the surface of the band-pass filter 30. Almost all is reflected back to the diffusion layer 40 without entering the white oil layer of the substrate 10 through the band-pass filter 30. Through such an optical path design, more light can be allowed to enter the diffusion layer 40 and the brightness enhancement film layer 50, thereby improving the light emitting efficiency of the surface light source as a whole.
  • the use of a three-color light-emitting diode chip can avoid the loss of excitation light efficiency caused by partially exciting the phosphor or the quantum dot film layer through the blue light-emitting diode chip, and can achieve more efficient light emission.
  • FIGS. 2A to 2D are schematic diagrams of the manufacturing process of the backlight device of FIG. 1; and FIG.
  • the manufacturing method of the backlight device mainly includes the following steps S100 to S102:
  • Step S100 Provide a substrate 10, as shown in FIG. 2A, wherein the substrate 10 may be prepared from at least one metal wire layer and an insulating layer, and the metal wire layer and the insulating layer may include, for example, a copper wire layer, polyacryl Imine film layer and white oil layer.
  • Step S101 A light emitting diode layer 20 is disposed on the substrate 10, as shown in FIG. 2B, wherein the light emitting diode layer 20 includes a plurality of light emitting diode chips (200, 201, 202) disposed at intervals.
  • the light-emitting diode chip (200, 201, 202) may include red, green, and blue sub-millimeter light-emitting diode (Mini LED) chips having a size between 100 and 200 microns. This step may further include a coating.
  • a cloth process is used to form a transparent filling layer 203, so that the material of the transparent filling layer 203 fills the gaps between the light-emitting diode chips (200, 201, 202) disposed at intervals, as shown in FIG. 2C.
  • Step S102 a band-pass filter 30 is provided on the surface to allow blue light to pass through but reflects red and green light, as shown in FIG. 2D, and further referring to FIG. 3, this step
  • the band-pass filter 30 is first prepared on a high-temperature-resistant transparent plastic film, and then an opening 300 is provided at a position corresponding to the light-emitting diode chip (200, 201, 202), and finally the The band-pass filter 30 is disposed on the light-emitting diode layer 20 by hot pressing.
  • the manufacturing method of the backlight device may further include the following steps S103 to S104:
  • Step S103 forming at least one diffusion layer 40 on the band-pass filter 30, wherein the diffusion layer 40 is a resin layer or an adhesive containing scattering particles for passing through the band-pass filter 30.
  • the openings receive light emitted from the light-emitting diode layer 20 for dispersing and mixing the light.
  • Step S104 forming at least one brightness enhancement film layer 50 on the at least one diffusion layer 40.
  • the present invention mainly adds a band-pass filter that allows blue light to penetrate and reflect red and green light above the light emitting diode layer, thereby reducing the return loss inside the Mini LED device. Increase the light output efficiency of the surface light source.
  • the present invention uses a red, green and blue light emitting diode chip to prepare a Mini LED device, and avoids a method in which a blue light emitting diode chip is used to excite a phosphor or a quantum dot film to emit other colored light, so as to avoid photon excitation loss caused by using this method. Improve the light output efficiency of Mini LED devices.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Planar Illumination Modules (AREA)
  • Led Device Packages (AREA)

Abstract

一种背光装置及其制造方法，背光装置包括一基板(10)、一发光二极管层(20)以及一带通滤光片(30)。发光二极管层(20)设于基板(10)上，并包括多个间隔设置的发光二极管芯片(200,201,202)。带通滤光片(30)设于发光二极管层(20)上，其中带通滤光片(30)在对应发光二极管芯片(200,201,202)的位置上设有开孔。

Description

背光装置及其制造方法 技术领域
本发明涉及显示领域，特别是涉及一种背光装置及其制造方法。
 背景技术
Mini LED(次毫米发光二极管)是一种尺寸介于传统LED与Micro LED之间的发光二极体，是OLED显示技术在未来市场上的强力竞争对手，其具有高亮度、可制作于柔性可弯曲基板上、可应用于高动态对比度显示技术、窄边框显示技术、异形显示技术等诸多优点，成为市场研究热点。然而，Mini LED在出光效率、混光均匀性、成本等方面与常规的背光产品及OLED显示技术相比还有一些差距。例如，以将Mini LED制作于印刷电路板或柔性电路板的直下式背光架构而言，由于折射率的差异导致面光源一部分光线在膜材和基板之间被限制而无法出射，光线在膜材之间的多次折返导致光能的损失和出光效率的下降。对于膜材本身而言，其穿透率也有一定的限制，如何提升发光二极管芯片的出光效率，减少光线在面光源内部的损耗已成为提高面光源光效的首要问题。
故，有必要提供一种背光装置及其制造方法，以解决现有技术所存在的问题。
 技术问题
有鉴于现有技术的缺点，本发明的主要目的在于提供一种背光装置及其制造方法，可以减少内部的回光损失，从整体上提升面光源的出光效率。
 技术解决方案
为达成本发明的前述目的，本发明提供一种背光装置，其包括：一基板；一发光二极管层，设于所述基板上，并包括多个间隔设置的发光二极管芯片；以及一带通滤光片，设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。
在本发明的一实施例中，所述背光装置还包括至少一扩散层，所述至少一扩散层设置于所述带通滤光片上，并通过所述带通滤光片的开孔接收从所述发光二极管层发出的光线，使所述光线分散混匀。
在本发明的一实施例中，所述发光二极管芯片包括红色、绿色及蓝色发光二极管芯片。
在本发明的一实施例中，所述基板至少包含一金属线层与一绝缘层。
在本发明的一实施例中，所述背光装置还包括至少一增亮膜层，所述至少一增亮膜层设置于所述至少一扩散层上。
在本发明的一实施例中，所述发光二极管芯片是尺寸介于100~200微米的次毫米发光二极管芯片。
在本发明的一实施例中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。
在本发明的一实施例中，所述带通滤光片制备在耐高温透明塑料膜片上。
本发明另提供一种包括如上所述的背光装置的制造方法，其包含下列步骤：提供一基板；设置一发光二极管层于所述基板上，所述发光二极管层并包括多个间隔设置的发光二极管芯片；以及设置一带通滤光片于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。
在本发明的一实施例中，所述背光装置的制造方法進一步包含下列步骤：形成至少一扩散层于所述带通滤光片上；以及形成至少一增亮膜层于所述至少一扩散层上。
 有益效果
本发明主要是在发光二极管层上方加入带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。
 附图说明
图1是本发明一实施例的背光装置的剖面示意图。
图2A至图2D是图1的背光装置的制造流程示意图。
图3是本发明一实施例的背光装置的带通滤光片的制造流程示意图。
图4是本发明一实施例的背光装置的制造方法的流程图。
 本发明的实施方式
为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下。再者，本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
本发明的背光装置主要可作为一般平面显示屏的背光源。请参考图1所示，图1是本发明一实施例的背光装置的剖面示意图。所述背光装置主要包括一基板10、一发光二极管层20以及一带通滤光片30，并可进一步包括至少一扩散层40及至少一增亮膜层50。
在一实施例中，所述基板10至少包含一金属线层与一绝缘层。例如所述基板10可包括铜线层、聚酰亚胺薄膜层和白油层，其中所述白油层用于将穿透过所述带通滤光片的蓝光二次反射回所述至少一扩散层。
如图1所示并进一步参考图2B及2C，所述发光二极管层20设于所述基板10上，并包括多个间隔设置的发光二极管芯片(200, 201, 202)。具体而言，所述发光二极管芯片(200, 201, 202)可包含尺寸介于100~200微米的红色、绿色及蓝色次毫米发光二极管(Mini LED)芯片，且由于所述发光二极管层20是采用红色、绿色及蓝色次毫米发光二极管芯片分别提供红、绿、蓝光，所述发光二极管层20可不具有萤光粉层或量子点膜层，不需要通过蓝色次毫米发光二极管芯片照射激发萤光粉层或量子点膜层来转换成其他色光，也就避免了荧光粉层或量子点膜层激发过程中的光子损失，从整体上提升面光源的出光效率。
在一实施例中，所述发光二极管层20还涂布有一透明填充层203，其填充于所述间隔设置的发光二极管芯片(200, 201, 202)之间的缝隙，并与所述发光二极管芯片(200, 201, 202)的高度相同，如此可使得所述发光二极管层20的表面平整，有利于后续膜层的设置。
如图1所示，所述带通滤光片30设于所述发光二极管层20上，所述带通滤光片30优选是制备在耐高温透明塑料膜片上。所述带通滤光片30在对应所述发光二极管芯片(200, 201, 202)的位置上设有开孔，且所述带通滤光片30的表面允许蓝光穿透，但是会反射红光和绿光。
如图1所示，所述至少一扩散层40是设置于所述带通滤光片30上，并通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。由于光线被分散混匀，所述至少一扩散层40会将一部分接收的光线反射回所述带通滤光片30。此时，所述带通滤光片30表面允许被所述至少一扩散层40所反射的光线中的蓝光穿透，并将所述反射的光线中的红光和绿光再次反射回所述至少一扩散层40。
如图1所示，所述至少一增亮膜层50是设置于所述至少一扩散层40上。且在本实施例中，所述背光装置包括了上、下增亮膜层(50, 51)，其作用为将光聚积在一定角度范围内，增加面光源的正面亮度。
由于红色、绿色及蓝色发光二极管芯片发出的光不经过带通滤光片30而直接进入扩散层40下表面，部份的红色、绿色及蓝色三色光在扩散层40下表面发生反射，反射后蓝光经过所述带通滤光片30和所述基板10的白油层后经过二次反射重新进入所述扩散层40中，绿光和红光在所述带通滤光片30的表面几乎被全部反射回所述扩散层40，而不会透过所述带通滤光片30进入所述基板10的白油层。通过这样的光路设计，可让更多光线进入扩散层40和增亮膜层50，从整体上提升面光源出光效率。同时，采用三基色的发光二极管芯片，可避免通过蓝色发光二极管芯片部分激发荧光粉或量子点膜层造成的激发光效损失，可以实现更高效的发光。
请进一步参考图2A至图2D及图4，图2A至图2D是图1的背光装置的制造流程示意图；图4是本发明一实施例的背光装置的制造方法的流程图。所述背光装置的制造方法主要包括下列步骤S100至S102：
步骤S100：提供一基板10，如图2A所示，其中所述基板10可由至少一金属线层与一绝缘层制备而成，所述金属线层与绝缘层可包括例如铜线层、聚酰亚胺薄膜层和白油层。
步骤S101：设置一发光二极管层20于所述基板10上，如图2B所示，其中所述发光二极管层20包括多个间隔设置的发光二极管芯片(200, 201, 202) 。具体而言，所述发光二极管芯片(200, 201, 202)可包含尺寸介于100~200微米的红色、绿色及蓝色次毫米发光二极管(Mini LED)芯片，本步骤还可再包含一涂布工艺来形成一透明填充层203，使透明填充层203的材料填充于所述间隔设置的发光二极管芯片(200, 201, 202)之间的缝隙，如图2C所示。
步骤S102：设置一表面允许蓝光穿透，但反射红光和绿光的带通滤光片30于所述发光二极管层20上，如图2D所示，其中进一步参考图3所示，本步骤会先将所述带通滤光片30制备在耐高温透明塑料膜片上，随后在对应所述发光二极管芯片(200, 201, 202)的位置上设有开孔300，最后再将所述带通滤光片30通过热压方式设于所述发光二极管层20上。
所述背光装置的制造方法还可包括下列步骤S103至S104：
步骤S103：形成至少一扩散层40于所述带通滤光片30上，其中所述扩散层40是含有散射颗粒的树脂层或胶黏剂，用以通过所述带通滤光片30的开孔接收从所述发光二极管层20发出的光线，用以使所述光线分散混匀。
步骤S104：形成至少一增亮膜层50于所述至少一扩散层40上。
综上所述，相较于现有技术，本发明主要是在发光二极管层上方加入允许蓝光穿透、反射红绿光的带通滤光片，减少Mini LED装置内部的回光损失，从整体上提升面光源的出光效率。且本发明通过采用红色、绿色及蓝色发光二极管芯片制备Mini LED装置，避免采用蓝光发光二极管芯片激发荧光粉或量子点膜发出其他色光的方法，以避免采用此方法会引起的光子激发损失，提升Mini LED装置的出光效率。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (20)

  1. 一种背光装置，其包括：
    一基板；
    一发光二极管层，设于所述基板上，并包括多个间隔设置的发光二极管芯片；
    一带通滤光片，设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔，所述带通滤光片允许蓝光穿透；以及
    至少一扩散层，所述至少一扩散层设置于所述带通滤光片上，并通过所述带通滤光片的开孔接收从所述发光二极管层发出的光线。
  2. 如权利要求1所述的背光装置，其中，所述发光二极管芯片是尺寸介于100~200微米的次毫米发光二极管芯片，包括红色、绿色及蓝色发光二极管芯片。
  3. 如权利要求1所述的背光装置，其中，所述基板至少包含一金属线层与一绝缘层。
  4. 如权利要求1所述的背光装置，其中，所述发光二极管装置还包括至少一增亮膜层，所述至少一增亮膜层设置于所述至少一扩散层上。
  5. 如权利要求1所述的背光装置，其中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。
  6. 一种背光装置，其包括：
    一基板；
    一发光二极管层，设于所述基板上，并包括多个间隔设置的发光二极管芯片；以及
    一带通滤光片，设于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。
  7. 如权利要求6所述的背光装置，其中，所述发光二极管装置还包括至少一扩散层，所述至少一扩散层设置于所述带通滤光片上，并通过所述带通滤光片的开孔接收从所述发光二极管层发出的光线，使所述光线分散混匀。
  8. 如权利要求7所述的背光装置，其中，所述发光二极管芯片包括红色、绿色及蓝色发光二极管芯片。
  9. 如权利要求8所述的背光装置，其中，所述基板至少包含一金属线层与一绝缘层。
  10. 如权利要求6所述的背光装置，其中，所述发光二极管装置还包括至少一增亮膜层，所述至少一增亮膜层设置于所述至少一扩散层上。
  11. 如权利要求8所述的背光装置，其中，所述发光二极管芯片是尺寸介于100~200微米的次毫米发光二极管芯片。
  12. 如权利要求6所述的背光装置，其中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。
  13. 如权利要求6所述的背光装置，其中，所述带通滤光片制备在耐高温透明塑料膜片上。
  14. 一种背光装置的制造方法，其中，所述制造方法包含下列步骤：
    提供一基板；
    设置一发光二极管层于所述基板上，所述发光二极管层并包括多个间隔设置的发光二极管芯片；以及
    设置一带通滤光片于所述发光二极管层上，其中所述带通滤光片在对应所述发光二极管芯片的位置上设有开孔。
  15. 如权利要求14所述的背光装置的制造方法，其進一步包含下列步骤：
    形成至少一扩散层于所述带通滤光片上；以及
    形成至少一增亮膜层于所述至少一扩散层上。
  16. 如权利要求14所述的背光装置的制造方法，其中，所述发光二极管芯片包括红色、绿色及蓝色发光二极管芯片。
  17. 如权利要求14所述的背光装置的制造方法，其中，所述基板至少包含一金属线层与一绝缘层。
  18. 如权利要求14所述的背光装置的制造方法，其中，所述发光二极管芯片是尺寸介于100~200微米的次毫米发光二极管芯片。
  19. 如权利要求14所述的背光装置的制造方法，其中，所述发光二极管层涂布有一透明填充层，其填充于所述间隔设置的发光二极管芯片之间的缝隙，并与所述发光二极管芯片高度相同。
  20. 如权利要求14所述的背光装置的制造方法，其中，所述带通滤光片制备在耐高温透明塑料膜片上。
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