WO2020057017A1 - Capteur de pixel infrarouge monolithique à base de silicium - Google Patents

Capteur de pixel infrarouge monolithique à base de silicium Download PDF

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Publication number
WO2020057017A1
WO2020057017A1 PCT/CN2019/070515 CN2019070515W WO2020057017A1 WO 2020057017 A1 WO2020057017 A1 WO 2020057017A1 CN 2019070515 W CN2019070515 W CN 2019070515W WO 2020057017 A1 WO2020057017 A1 WO 2020057017A1
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WIPO (PCT)
Prior art keywords
silicon
infrared
layer
pixel sensor
gesn
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PCT/CN2019/070515
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English (en)
Chinese (zh)
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汪巍
方青
涂芝娟
曾友宏
蔡艳
王庆
王书晓
余明斌
Original Assignee
中国科学院上海微系统与信息技术研究所
上海新微科技服务有限公司
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Publication of WO2020057017A1 publication Critical patent/WO2020057017A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • the present application relates to the field of semiconductor technology, and in particular, to a silicon-based monolithic infrared pixel sensor.
  • Infrared image sensors have important applications in military, defense, medical, and automatic imaging.
  • semiconductor materials used for infrared image sensors include III-V group materials InGaAs, GaInAsSb, InGaSb, etc., II-VI materials HgCdTe, and IV group materials Ge, GeSn, and the like.
  • III-V detectors have excellent performance in the near-infrared band, while the II-VI detectors are mainly used in the mid-far infrared band.
  • CMOS complementary metal oxide semiconductor
  • Embodiments of the present application provide a silicon-based monolithic infrared pixel sensor and a method for manufacturing the same.
  • An infrared detector made of a germanium tin (GeSn) material is formed on a silicon-based substrate.
  • GeSn GeSn material has a large absorption coefficient in the short-wave infrared to mid-infrared band, which can be used to prepare infrared detectors; and GeSn materials have higher carrier migration than germanium (Ge) materials and silicon (Si) materials Rate can also be used to prepare high-speed transistors.
  • the infrared detector is made of germanium tin (GeSn) material, the high response characteristics of the germanium tin (GeSn) material of the infrared detector in the infrared band can be realized.
  • a silicon-based single-chip infrared pixel sensor including:
  • the transistor may also be made of germanium tin (GeSn) material. Therefore, the high response characteristics of the germanium tin (GeSn) material in the infrared band and the high mobility characteristics of the germanium tin (GeSn) material transistor can be combined; In addition, since the preparation process of germanium tin (GeSn) material is compatible with the standard CMOS process, the photodetector and the transistor can be integrated in a silicon substrate to form a monolithic infrared pixel sensor under the standard CMOS process. High integration and low cost of monolithic infrared pixel sensor. According to another aspect of the embodiments of the present application, a material of the silicon-based substrate is silicon or silicon on an insulator, and a material of the buffer layer is germanium or silicon germanium (SiGe).
  • the infrared detector includes: an n-type contact layer, an infrared light absorption layer, and a p-type contact layer in order from the side close to the buffer layer and away from the buffer layer side,
  • the material of the n-type contact layer and the p-type contact layer is germanium (Ge) or germanium tin (GeSn), and the material of the infrared light absorption layer is germanium tin (GeSn).
  • the infrared detector and the transistor are electrically connected through a conductive material.
  • the anti-protective layer is SiO 2 .
  • the buffer layer has a thickness of 1 micron.
  • This application also provides a method for manufacturing a silicon-based monolithic infrared pixel sensor, including:
  • the infrared detector uses germanium tin (GeSn) material.
  • forming an infrared detector and a transistor on the buffer layer includes:
  • germanium tin (GeSn) material layer Forming a germanium tin (GeSn) material layer on the n-type contact layer;
  • germanium tin (GeSn) material between the infrared detector and the transistor is etched away.
  • forming an infrared detector and a transistor on the buffer layer further includes:
  • a contact electrode is formed on the surface of the protective layer to make electrical contact with the p-type contact layer, the n-type contact layer, the source, the drain, and the gate stack of the transistor, respectively.
  • the beneficial effect of the present application is that in the case of a silicon-based monolithic infrared pixel sensor, when the infrared detector is made of germanium tin (GeSn) material, the high response of the germanium tin (GeSn) material of the infrared detector in the infrared band can be achieved. characteristic.
  • a photodetector and a transistor are integrated in a silicon substrate to form a monolithic infrared pixel sensor.
  • FIG. 1 is a schematic diagram of a silicon-based single-chip infrared pixel sensor according to Embodiment 1 of the present application; FIG.
  • FIG. 2 is an equivalent circuit diagram of a silicon-based infrared pixel sensor according to Embodiment 1 of the present application;
  • FIG. 3 is a schematic diagram of a method for manufacturing a silicon-based monolithic infrared pixel sensor according to Embodiment 2 of the present application;
  • FIG. 4 is a schematic diagram of step 302 of FIG. 3;
  • FIG. 5 is a cross-sectional view of a device corresponding to each step in an example of Embodiment 2 of the present application.
  • lateral a direction parallel to the main surface of the silicon-based substrate
  • longitudinal a direction perpendicular to the main surface of the silicon-based substrate
  • An embodiment of the present application provides a silicon-based single-chip infrared pixel sensor.
  • FIG. 1 is a schematic diagram of a silicon-based monolithic infrared pixel sensor according to this embodiment. As shown in FIG. 1, the silicon-based monolithic infrared pixel sensor 1 includes:
  • the infrared detector is made of germanium tin (GeSn) material, it is possible to realize the use of germanium-tin (GeSn) material in the silicon-based monolithic infrared pixel sensor in the infrared band High response characteristics.
  • the transistor can also be made of germanium tin (GeSn) material.
  • germanium tin (GeSn) material transistor Using the high mobility characteristics of the germanium tin (GeSn) material transistor, the preparation process of the germanium tin (GeSn) material is compatible with the standard CMOS process. Therefore, The photodetector and the transistor can be integrated in a silicon substrate to form a monolithic infrared pixel sensor under a standard CMOS process, thereby realizing the high integration and low cost of the monolithic infrared pixel sensor.
  • the material of the silicon-based substrate 11 is silicon (Si) or silicon on insulator (SOI).
  • the material of the buffer layer 12 is germanium (Ge) or silicon germanium (SiGe).
  • n-type contact layer 131 infrared light absorption layer 132, and p-type contact.
  • Layer 133 infrared light absorption layer 132, and p-type contact.
  • the material of the n-type contact layer 131 may be n-type germanium (Ge) or n-type germanium tin (GeSn); the material of the p-type contact layer 133 may be p-type germanium (Ge) or p Type germanium tin (GeSn).
  • the material of the infrared light absorbing layer 132 is germanium tin (GeSn), for example, intrinsic germanium tin (GeSn). Therefore, the infrared light absorbing layer 132 has a higher absorption efficiency for the infrared light band.
  • the transistor 14 includes a source region 142 and a drain region 143, and a gate stack 144.
  • the transistor 14 includes a source region 142 and a drain region 143 formed in a germanium tin (GeSn) material layer 141, and a gate stack 144 formed on a surface of the germanium tin (GeSn) material layer 141. .
  • the source region 142 and the drain region 143 may be n-type, and the region between the source region 142 and the drain region 143 corresponding to the gate stack 144 may be p-type, thereby forming n Field effect transistor (FET); or, the source region 142 and the drain region 143 may be p-type, and the region between the source region 142 and the drain region 143 corresponding to the gate stack 144 may be an n-type. As a result, a p-type field effect transistor (FET) is formed.
  • FET field effect transistor
  • the gate stack 144 may include a stacked high-k dielectric material layer 1441 and a metal layer 1442.
  • the material of the high-k dielectric material layer is, for example, hafnium oxide (HfO 2 ).
  • the material of the metal layer is, for example, HfO 2 . It is titanium nitride (TaN).
  • this embodiment may not be limited to this.
  • the high-k dielectric material layer 1441 and the metal layer 1442 may also be other materials.
  • the infrared detector 13 and the transistor 14 can be protected by a protective layer 15.
  • the protective layer 15 can also serve as an anti-reflection layer to promote the absorption of infrared light by the infrared detector 13.
  • contact electrodes 16 may be formed on the surface of the protective layer 15, and each contact electrode 16 may be respectively connected to the p-type contact layer, the n-type contact layer of the infrared detector 13 through the connecting material 17 passing through the protective layer 15.
  • the source, drain, and gate stacks of the transistor 14 are in electrical contact.
  • the infrared detector 13 and the transistor 14 may be electrically connected through a conductive material (not shown).
  • a conductive material not shown
  • the n-pole of the infrared detector 13 and the drain 142 of the transistor 14 are electrically connected, thereby forming a passive type.
  • FIG. 2 is an equivalent circuit diagram of the silicon-based infrared pixel sensor of this embodiment. As shown in FIG. 2, in the silicon-based infrared pixel sensor 1, the infrared detector 13 generates a photocurrent in response to external infrared light, and the photocurrent is output through the source 142 of the transistor 14.
  • a silicon-based monolithic infrared pixel sensor can combine the high response characteristics of germanium-tin (GeSn) materials in the infrared band.
  • GeSn germanium-tin
  • a photodetector and a transistor are integrated in a silicon substrate to form a single unit.
  • -Chip infrared pixel sensor achieving high integration and low cost of a single-chip infrared pixel sensor.
  • Embodiment 2 provides a method for manufacturing a silicon-based monolithic infrared pixel sensor, which is used to manufacture the silicon-based monolithic infrared pixel sensor described in Embodiment 1.
  • FIG. 3 is a schematic diagram of a method for manufacturing a silicon-based monolithic infrared pixel sensor according to this embodiment. As shown in FIG. 3, in this embodiment, the method for manufacturing the silicon-based monolithic infrared pixel sensor may include:
  • Step 301 Form a buffer layer 12 on a silicon-based substrate 11.
  • Step 302 An infrared detector 13 and a transistor 14 are formed on the buffer layer 12, wherein the infrared detector 13 is made of germanium tin (GeSn) material.
  • FIG. 4 is a schematic diagram of step 302 of FIG. 3. As shown in FIG. 4, step 302 may include the following steps:
  • Step 3021 forming an n-type contact layer of the infrared detector on the buffer layer 12;
  • Step 3022 forming a germanium tin (GeSn) material layer 132a on the n-type contact layer 131;
  • Step 3023 forming a p-type contact layer of the infrared detector on the germanium tin (GeSn) material layer 132a;
  • Step 3024 forming a source stack 142 and a drain electrode 143 of the transistor 14 to form a gate stack 144 of the transistor, wherein the gate stack 144 includes a stacked high-k dielectric material layer 1441 and a metal layer 1442; and
  • step 3025 the germanium tin (GeSn) material layer 132a between the infrared detector 13 and the transistor 14 is etched away.
  • the germanium tin (GeSn) material layer remaining in the infrared detector 13 is the infrared light absorbing layer 132.
  • the transistor 14 is also made of germanium tin (GeSn) material.
  • a source 142 and a drain electrode 143 of the transistor 14 are formed on the germanium tin (GeSn) material layer 132a.
  • a GeSn) material layer 132a forms a gate stack 144 of the transistor.
  • step 302 may further include after step 3025:
  • Step 3026 forming a protective layer 15 for protecting the infrared detector 13 and the transistor 14;
  • a contact electrode 16 is formed on the surface of the protective layer 15 to make electrical contact with the p-type contact layer, the n-type contact layer, the source, the drain, and the gate stack of the transistor 14 respectively.
  • FIG. 5 is a cross-sectional view of the device corresponding to each step in this example.
  • a method for manufacturing a silicon-based monolithic infrared pixel sensor includes the following steps:
  • Step 1 As shown in FIG. 5 (a):
  • a Ge buffer layer 12 with a thickness of 0.5 to 2 micrometers is epitaxially grown by chemical vapor deposition; an n-type Ge contact layer is grown in situ as a n-type contact layer 131 by a chemical vapor deposition method with a doping concentration greater than 2 * 10 19 cm -3 ; An intrinsic GeSn layer is grown by a chemical vapor deposition method as a germanium tin (GeSn) material layer 132a with a thickness of 300 nm; a p-type Ge contact layer is grown in situ as a n-type contact layer 131 by a chemical vapor deposition method.
  • GeSn germanium tin
  • the buffer layer has a thickness of about 1 micron.
  • Step 2 As shown in FIG. 5 (b):
  • the transistor region is defined by photolithography, and the p-type Ge contact layer 133 is etched to expose the intrinsic GeSn layer; the source region and drain region of the transistor 14 are defined by photolithography; 143. If phosphorus ions can be implanted, the energy is 20 keV, the dose is 1 * 10 15 cm -2 , and annealing is performed at 400 ° C. for 5 minutes. TaN), or other high-k dielectric layers and metal layers; the gate stack 144 is formed by photolithography and etching.
  • the intrinsic GeSn layer of the region of the transistor 14 can be completely etched to form a conventional CMOS transistor on the rail base.
  • Step 3 As shown in FIG. 5 (c):
  • the mesa of the GeSn infrared detector 13 is prepared by photolithography and etching processes, and is etched to an n-type Ge contact layer, so as to form an infrared light absorption layer 132 and a germanium tin (GeSn) material layer 141; a SiO 2 protective layer 15 is deposited, It can also function as an anti-reflection layer; chemical mechanical polishing is used to planarize the surface of the SiO 2 protective layer 15.
  • Step 4 As shown in (d) of FIG. 5:
  • the contact area is defined by photolithography and etching; the metal is deposited, and the metal surface is planarized by chemical mechanical polishing; and the contact electrode 16 is formed by photolithography and etching.
  • a silicon-based monolithic infrared pixel sensor can combine the high response characteristics of a germanium tin (GeSn) material in the infrared band and the high mobility characteristics of a germanium tin (GeSn) material transistor; and, in a standard CMOS process, The photodetector and the transistor are integrated in a silicon substrate to form a monolithic infrared pixel sensor, which achieves a high degree of integration and low cost of the monolithic infrared pixel sensor.
  • GeSn germanium tin

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

L'invention concerne un capteur de pixel infrarouge monolithique à base de silicium, le capteur de pixel infrarouge monolithique à base de silicium comprenant : un substrat à base de silicium ; une couche tampon située sur le substrat à base de silicium ; un détecteur infrarouge et un transistor situé sur la couche tampon, le détecteur infrarouge utilisant de l'étain-germanium (GeSn), l'épaisseur de la couche tampon est de 0,5 à 2 microns, et une couche de protection qui sert également de couche antireflet, de façon à favoriser l'absorption de la lumière infrarouge par le détecteur infrarouge. Selon la présente invention, le détecteur infrarouge est constitué de l'étain-germanium (GeSn), de telle sorte que le détecteur photoélectrique et le transistor peuvent être intégrés dans un substrat de silicium pour former le capteur de pixel infrarouge monolithique par combinaison de la caractéristique de réponse élevée du matériau d'étain-germanium (GeSn) dans une bande infrarouge sous un processus CMOS standard.
PCT/CN2019/070515 2018-09-21 2019-01-05 Capteur de pixel infrarouge monolithique à base de silicium WO2020057017A1 (fr)

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CN201821551758.4 2018-09-21
CN201821551758.4U CN208923139U (zh) 2018-09-21 2018-09-21 一种硅基单片红外像素传感器

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897471B1 (en) * 2003-11-28 2005-05-24 The United States Of America As Represented By The Secretary Of The Air Force Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon
CN104993025A (zh) * 2015-07-01 2015-10-21 西安电子科技大学 氮化硅膜致应变的锗锡中红外led器件及其制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897471B1 (en) * 2003-11-28 2005-05-24 The United States Of America As Represented By The Secretary Of The Air Force Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon
CN104993025A (zh) * 2015-07-01 2015-10-21 西安电子科技大学 氮化硅膜致应变的锗锡中红外led器件及其制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BENJAMIN R. CONLEY ET AL.: "Temperature dependent spectral response and de- tectivity of GeSn photoconductors on silicon for short wave infrared dete- ction", OPTICS EXPRESS, vol. 22, no. 13, 19 June 2014 (2014-06-19), XP055695358, ISSN: 1094-4087 *
WEI WANG ET AL.: "High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform", OPTICS EXPRESS, vol. 26, no. 8, 16 April 2018 (2018-04-16), XP055695364, ISSN: 1094-4087 *

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