WO2020056835A1 - 柔性单晶兰姆波谐振器及其形成方法 - Google Patents

柔性单晶兰姆波谐振器及其形成方法 Download PDF

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Publication number
WO2020056835A1
WO2020056835A1 PCT/CN2018/110929 CN2018110929W WO2020056835A1 WO 2020056835 A1 WO2020056835 A1 WO 2020056835A1 CN 2018110929 W CN2018110929 W CN 2018110929W WO 2020056835 A1 WO2020056835 A1 WO 2020056835A1
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region
single crystal
device region
anchor structure
forming
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French (fr)
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庞慰
孙新
张孟伦
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Tianjin University
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Tianjin University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02039—Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type

Definitions

  • the invention relates to the field of semiconductor technology, in particular to a flexible single crystal Lamb wave resonator and a method for forming the same.
  • Lamb wave resonators with single crystal materials such as lithium niobate and lithium tantalate as piezoelectric films also have high Kt2 And high Q value, can meet the requirements of the next generation of reconfigurable and multi-frequency broadband filtering.
  • Ultra-low power wake-up receivers are also a major research hotspot of single crystal Lamb wave resonators.
  • Traditional Lamb wave resonators are based on a hard substrate, which makes the demand in the field of flexible electronics (such as flexible resonators, filters, oscillators, sensors) still unsatisfactory, so it is urgent to develop a flexible Lamb wave resonator. Resonator.
  • the existing method for preparing a flexible device is roughly divided into two steps: first, the device is prepared on a rigid substrate, and then the device is transferred from the rigid substrate to the flexible substrate by a stamp transfer method.
  • a conventional piezoelectric material AlN or ZnO
  • FBAR Flexible Film Cavacoustic resonance filter
  • the specific manufacturing process is: (1) providing a silicon substrate, and depositing SiO2 on the top surface of the silicon substrate The material is used as a sacrificial layer, and then by defining the device region, only the SiO 2 deposited under the device region is retained, and the remaining regions of SiO 2 are removed; (2) a bottom electrode layer, a piezoelectric layer (that is, AlN or ZnO) and top electrode, as shown in Figure 1 at this time; (3) As the sacrificial layer is reserved only in the device region, and the other regions do not retain the sacrificial layer, the lower part of the device is suspended by the release process
  • the crystal ion slicing technology cannot control the stress, so that the prepared single crystal thin film has residual stress. After the cavity release process, the residual stress will cause the single crystal thin film to bend or crack, reducing the performance of the device, and even directly causing fracture to cause the device. scrapped. Finally, during the dry etching of the top of the silicon substrate, due to the isotropy of the dry etching, the bottom of the released cavity will be uneven, which may easily lead to device damage during subsequent transfer.
  • the present invention provides a flexible single crystal Lamb wave resonator and a method for forming the same.
  • the method for forming a flexible single crystal Lamb wave resonator according to the first aspect of the present invention includes: providing a hard substrate; forming a sacrificial layer on the hard substrate; and forming a single crystal thin film layer on the sacrificial layer.
  • the window region is used to separate the device region from the surrounding region, and the anchor structure is used to connect the A device region and the surrounding region, and then an interdigital electrode is formed on the device region; etching removes the window region to retain the device region, the anchor structure, and the surrounding region; and releases and removes the window region and the anchor structure And a sacrificial layer below the device region, so that the device region and the interdigital electrode are suspended on the hard substrate by the anchor structure; a seal is used to adhere the device region and the interdigital finger Electrode, and then disconnect the anchor structure so that the device region and the interdigitated electrode are separated from the hard substrate; provide a flexible substrate with a top cavity; use the seal to separate the device region and the fork Means that the electrode is transferred to the flexible substrate Aligning the cover and the top of the cavity.
  • the method further includes: before the step of forming the single crystal thin film layer, further including: forming the single crystal A metal layer under the thin film layer; after the step of removing the window region by etching, retaining the device region, the anchor structure, and the surrounding region, the method further includes: removing the metal layer below the window region, and retaining all The bottom electrode metal layer below the device region is used as the bottom electrode; while the step of adhering the device region and the interdigital electrode with a seal, the bottom electrode is adhered; Simultaneously with the step of transferring the interdigitated electrode onto the flexible substrate and covering and aligning the top cavity, transferring the bottom electrode onto the flexible substrate and covering and aligning the top cavity.
  • the method further includes: forming an air reflection grid above the device region and near the interdigital electrode.
  • the material of the sacrificial layer is silicon dioxide or benzocyclobutene.
  • the thickness of the sacrificial layer is 0.1 ⁇ m to 10 ⁇ m.
  • a material of the single crystal thin film layer is lithium niobate or lithium tantalate.
  • the thickness of the single crystal thin film layer is 0.1 ⁇ m to 2 ⁇ m.
  • the anchor structure includes a plurality of breakpoint structures.
  • the seal includes a pressing portion and an adhesion portion, wherein the pressing portion is located above the adhesion portion, and the cross-sectional size of the adhesion portion is larger than the device region size and smaller than the surrounding area.
  • the internal dimension of the zone, the cross-sectional dimension of the press-up part is larger than the cross-sectional dimension of the adhesion part.
  • the frequency range of the flexible single crystal resonator is 20MHz-2GHz.
  • the method for forming the flexible single crystal Lamb wave resonator of the present invention has at least the following advantages: (1)
  • the anchor structure enables the piezoelectric film in the device region to be connected with the piezoelectric film in other parts, and ensures that the device region will not be damaged during the release process. Drift away; meanwhile, the anchor structure also carries the release of the residual stress of the piezoelectric film after the cavity release process.
  • a sacrificial layer is introduced between the rigid substrate and the single crystal thin film layer. The sacrificial layer can suspend the device region on the hard substrate through the release process, and ensure that a flat plane is below the device region. This ensures that When using a soft seal to emboss the transfer, the device area will not be damaged due to the unevenness of the lower plane, which improves the success rate of transfer.
  • the flexible single crystal Lamb wave resonator provided by the second aspect of the present invention is obtained by the method according to the present invention.
  • FIG. 1 is a schematic structural diagram of a conventional conventional piezoelectric material flexible device before a cavity is released;
  • FIG. 2 is a schematic flowchart of a method for forming a flexible single crystal Lamb wave resonator according to an embodiment of the present invention
  • 3 is a material electron diffraction pattern of a lithium niobate single crystal thin film layer according to an embodiment of the present invention
  • 4 to 13 are schematic process diagrams of a method for forming a flexible single crystal Lamb wave resonator according to an embodiment of the present invention
  • 14 to 16 are schematic process diagrams of a method for forming a flexible single crystal Lamb wave resonator according to a second embodiment of the present invention.
  • first and second are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality” is two or more, unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed” and other terms shall be understood in a broad sense unless otherwise specified and defined, for example, they may be fixed connections or removable connections , Or integrally connected; it can be mechanical or electrical; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements.
  • the specific meanings of the above terms in the present invention can be understood according to specific situations.
  • the "first" or “down” of the second feature may include the first and second features in direct contact, and may also include the first and second features. Not directly, but through another characteristic contact between them.
  • the first feature is “above”, “above”, and “above” the second feature, including that the first feature is directly above and obliquely above the second feature, or merely indicates that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below”, and “below” of the second feature, including the fact that the first feature is directly below and obliquely below the second feature, or merely indicates that the first feature is less horizontal than the second feature.
  • the invention aims to propose a single crystal Lamb wave resonator with a cavity flexible substrate and a method for forming the same.
  • the single crystal Lamb wave resonator with a cavity flexible substrate has the high performance of a single crystal resonator and the flexibility of flexible devices, which makes it have a wider application field and a very good application prospect.
  • the advantages of the bottom Lamb wave resonator compared with traditional resonators are shown in Table 1.
  • FIG. 2 is a schematic flowchart of a method for forming a flexible single crystal Lamb wave resonator according to an embodiment of the present invention. As shown in Figure 2, the method includes the following steps:
  • Step S1 Provide a hard substrate.
  • Step S2 forming a sacrificial layer on the hard substrate.
  • Step S3 forming a single crystal thin film layer on the sacrificial layer.
  • Step S4 The single crystal thin film layer is divided into a device region, a surrounding region, a window region, and an anchor structure.
  • the window region is used to separate the device region from the surrounding region.
  • the anchor structure is used to connect the device region and the surrounding region. Interdigitated electrodes are formed on it.
  • Step S5 The window area is removed by etching, and the device area, the anchor structure, and the surrounding area are retained.
  • Step S6 releasing and removing the sacrificial layer under the window area, the anchor structure and the device area, so that the device area and the interdigital electrode are suspended on the hard substrate under the action of the anchor structure.
  • Step S7 Use the seal to adhere the device region and the interdigital electrode, and then disconnect the anchor structure to separate the device region and the interdigital electrode from the hard substrate.
  • Step S8 Provide a flexible substrate with a top cavity.
  • Step S9 Use the stamp to transfer the device area and the interdigitated electrode onto the flexible substrate and cover the top cavity.
  • the method for forming a flexible single crystal Lamb wave resonator according to the embodiment of the present invention has at least the following advantages: (1)
  • the anchor structure enables the piezoelectric film in the device region to be connected with the piezoelectric film in the surrounding region to ensure that the device region is released It will not drift away during the process, and the anchor structure is also used to carry the residual stress release of the piezoelectric film after the cavity release process.
  • a sacrificial layer is introduced between the rigid substrate and the single crystal thin film layer, and the sacrificial layer can be removed by a release process, so that the device region is suspended on the hard substrate, and at the same time, a flat plane is ensured below the device region, thereby ensuring The device area will not be damaged due to the unevenness of the lower plane when the transfer is stamped with a stamp, which improves the transfer success rate.
  • the method before the step of forming the single crystal thin film layer, the method further includes: forming a metal layer under the single crystal thin film layer; After the step of removing the window region by etching, and retaining the device region, the anchor structure, and the surrounding region, the method further includes: removing the metal layer below the window region, and retaining the bottom electrode metal layer below the device region as Bottom electrode; while the step of adhering the device area and the interdigital electrode with a seal, adhere the bottom electrode; while using the seal to transfer the device area and the interdigital electrode onto a flexible substrate and covering the alignment with the top cavity, Transfer the bottom electrode over the flexible substrate and cover the top cavity.
  • the presence of the bottom electrode can improve the performance of the resonator.
  • the method may further include: forming an air reflection grid above the device region and near the interdigital electrode.
  • the presence of air reflective grids can improve device performance.
  • the material of the sacrificial layer may be silicon dioxide or Benzocyclobutene (BCB).
  • the thickness of the sacrificial layer may be 0.1 ⁇ m to 10 ⁇ m. If the thickness of the sacrificial layer is less than 0.1 ⁇ m, it is difficult for the single crystal film to be bonded to the sacrificial layer; if the thickness of the sacrificial layer is more than 10 ⁇ m, it is not conducive to the subsequent release process to remove it.
  • the material of the single crystal thin film layer may be lithium niobate or lithium tantalate.
  • the thickness of the single crystal thin film layer may be 0.1 ⁇ m to 2 ⁇ m. If the thickness of the single crystal thin film layer is less than 0.1 ⁇ m, the manufacturing process is too difficult, and the subsequent transfer step is too easy to damage the device; if the thickness of the single crystal thin film layer is greater than 2 ⁇ m, the device flexibility will be deteriorated.
  • the anchor structure may include a plurality of breakpoint structures. Multiple breakpoint structures can make the anchor structure slightly connect the device area and the surrounding area, ensuring that the fracture of the anchor structure is neat when the external force is broken, which facilitates separation and releases stress.
  • the anchor structure is generally designed in an elongated shape, such as an aspect ratio greater than 10: 1.
  • the seal may include a pressure-extracting portion and an adhesion portion.
  • the pressure lifting portion is located above the adhesion portion.
  • the cross-sectional size of the adhesive portion is larger than the device area size and smaller than the inner size of the surrounding area.
  • the cross-sectional dimension of the pressing part is larger than the cross-sectional dimension of the adhesion part.
  • the bottom surface of the seal shape of the embodiment of the present invention matches the size of the device area, so the release window does not need to be opened too wide, more devices can be manufactured per unit area, the utilization rate of the single crystal piezoelectric material can be improved, and economic benefits can be increased.
  • the frequency of the flexible single crystal resonator is in the range of 20 MHz to 2 GHz.
  • the invention also provides a flexible single crystal Lamb wave resonator.
  • the flexible single crystal Lamb wave resonator of the present invention is obtained by the method disclosed in the present invention.
  • a hard substrate 101 of silicon material having a thickness of about 400 ⁇ m is provided, and then a sacrificial layer 102 of silicon dioxide material having a thickness of 0.1-10 ⁇ m (preferably 1 ⁇ m) is formed on the hard substrate 101 by a chemical vapor deposition process, and then passed through ions.
  • the slicing process bonds a single crystal thin film layer 103 of a lithium niobate material with a thickness of 0.1-2 ⁇ m (preferably 0.7 ⁇ m) on the sacrificial layer 102.
  • the ion slicing process specifically refers to implanting He + ions on the front surface of the donor lithium niobate wafer, so that He + ions are implanted into a certain depth of the lithium niobate wafer and forming a He + ion layer, and then passing The thermal annealing process causes He + to form He molecular bubbles, thereby peeling off the thin film layer.
  • CMP chemical mechanical polishing
  • the transmission electron microscope was used to study the lattice arrangement of piezoelectric thin films using electron diffraction.
  • the Bragg diffraction intensity is a direct result of the periodic arrangement of the lattice. The better the periodicity, the more regular the arrangement, and the greater the Bragg diffraction intensity.
  • Figure 3 the reciprocal crystal lattice is clear, and no amorphous ring appears, and the diffraction pattern shows a hexagonal lattice pattern, indicating that the lithium niobate film has a single crystal structure.
  • a device layout is provided as shown in FIG. 5.
  • the single crystal thin film layer 103 in the layout is divided into a device region 103A, a peripheral region 103B, a window region 103C, and an anchor structure 103D.
  • the window region 103B separates the device region 103A from the surrounding region 103B, and the anchor structure 103D connects the device region 103A and the surrounding region 103B.
  • the size of the window area 103C needs to be set reasonably to avoid waste of raw materials.
  • the anchor structure 103D is generally provided in an elongated shape.
  • a plurality of breakpoint structures are provided on the anchor structure 103D, as shown in FIG. 6.
  • a plurality of interdigital electrodes 104 are formed on the single crystal thin film layer 103.
  • the number of the interdigital electrodes is indefinite, and the signal terminal (S) and the ground terminal (G) may be arranged alternately, as shown in FIG. 7.
  • the interdigital electrode 104 is used to generate a transverse electric field to excite the resonator.
  • an air reflection element 105 can also be formed on the single crystal thin film layer 103 above the device region 103A and near the interdigital electrode 104, as shown in FIG.
  • the air reflection grid 105 can transmit sound waves to the reflection grid and be reflected, thereby improving the performance of the resonator.
  • the window region 103C of the single crystal thin film layer is removed by etching. Then, the sacrificial layer is removed by using a release technique, that is, soaking with a hydrofluoric acid solution or putting a gaseous hydrofluoric acid machine to remove the sacrificial layer 102 to obtain a cavity.
  • a release technique that is, soaking with a hydrofluoric acid solution or putting a gaseous hydrofluoric acid machine to remove the sacrificial layer 102 to obtain a cavity.
  • FIG. 8a is a cross-sectional view of the device without passing through the anchor structure, which corresponds to the horizontal cross-sectional view of the layout shown in FIG. 5;
  • FIG. 8b is a cross-sectional view of the device passing through the anchor structure, which corresponds to the vertical cross-sectional view of the layout shown in FIG. Illustration.
  • the interdigital electrode 104 is shown in FIGS. 8 a and 8 b, and the air reflection grid is omitted.
  • the device region 103A is suspended above the hard substrate 101 and is connected to the surrounding region 103B by means of the anchor structure 103D.
  • the top of the rigid substrate 101 is flat and smooth.
  • a transfer seal is provided.
  • a cutaway view of the transfer seal is shown in FIG. 9a and a top view is shown in FIG. 9b.
  • the transfer stamp includes an upper pressing portion A and a lower adhesion portion B.
  • the cross-sectional size of the adhesive portion A needs to be slightly larger than the internal size of the device area 103A and smaller than the internal size of the peripheral area 103B, so that the device area can be effectively adhered without excessively adhering to the surrounding area.
  • the cross-sectional size of the pressing part B is larger than the cross-sectional size of the adhesion part A, which is more convenient for the robotic arm to hold the transfer seal for transfer.
  • the interdigital electrode 104 and the structure air reflection grid 105 are always located above the device region 103A. Because the thickness of the interdigital electrode 104 and the structure air reflection grid 105 is relatively thin, it is omitted and not shown in the drawings of some descriptions below.
  • the transfer stamp is aligned with the device region 103A, downward pressure is applied, and the device region 103A is adhered to the transfer stamp, and at the same time, the growth stress of the single crystal thin film is released, and the device region 103A is prevented from remaining due to stress Cracks appear.
  • the top of the hard substrate 101 is flat, so when the device region 103A is pressed to the top of the hard substrate 101, it can also be kept intact.
  • the anchor structure 103D is broken by receiving a force, thereby separating the device region 103A from the original hard substrate 101.
  • a flexible substrate 106 having a top cavity is provided. Then, as shown in FIG. 12a to FIG. 12c, the device region 103A is transferred onto the flexible substrate 106 using a transfer stamp and covers the top cavity. The resulting device is shown in Figure 13.
  • a four-layer structure shown in FIG. 14 is formed from bottom to top, including a hard base layer 101, a sacrificial layer 102, a metal layer 107 (thickness about 0.1 ⁇ m), and a single crystal thin film layer 103. Then, referring to the steps in Example 1, the single crystal thin film region is divided, the window is etched, and the cavity is released. The device structure after the silicon dioxide of the sacrificial layer 102 is removed by the release process is shown in FIG. 15, and a bottom electrode 107 'is formed under the device region 103A.
  • Example 1 Continue referring to the steps in Example 1 for seal transfer to transfer the resonator structure from a hard substrate to a flexible substrate with a top cavity. The resulting device is shown in Figure 16.

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  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明提供一种柔性单晶兰姆波谐振器及其形成方法。该方法包括：提供硬质基底；在硬质基底之上形成牺牲层；在牺牲层之上形成单晶薄膜层；将单晶薄膜层划分为器件区、周围区、窗口区和锚结构，窗口区用于将器件区和周围区隔开，锚结构用于连接器件区和周围区，然后在器件区之上形成叉指电极；刻蚀去除窗口区，保留器件区、锚结构和周围区；释放去除窗口区、锚结构和器件区下方的牺牲层，以使器件区和叉指电极在锚结构的作用下悬于硬质基底上；利用印章粘附器件区和叉指电极，然后断开锚结构从而使器件区和叉指电极脱离硬质基底；提供具有顶部空腔的柔性基底；利用印章将器件区和叉指电极转移至柔性基底之上并且覆盖对准顶部空腔。

Description

柔性单晶兰姆波谐振器及其形成方法 技术领域
本发明涉及半导体技术领域，特别地涉及一种柔性单晶兰姆波谐振器及其形成方法。
背景技术
包括物联网和5G领域新的应用对谐振器的功耗和带宽提出了更高的要求，以铌酸锂、钽酸锂等单晶材料为压电薄膜的兰姆波谐振器同时具备高Kt2和高Q值，可以满足下一代可重构和多频宽带滤波的要求。超低功耗唤醒接收机(Ultra-low powerWake-Up Recivers)也是单晶兰姆波谐振器的一大研究热点。传统的兰姆波谐振器都是基于硬质基底的，这使得柔性电子领域(例如柔性谐振器，滤波器，振荡器，传感器)的需求依旧无法满足，所以急需研制出一种柔性兰姆波谐振器。
现有的制备柔性器件的方法大致分两步：首先在硬质基底上制备器件，然后通过印章转移的方法把器件从硬质基底转移到柔性基底。以常规压电材料(AlN或者ZnO)的柔性薄膜腔声谐振滤波器(Film Bulk Acoustic Resonator，简称FBAR)器件为例，具体制造工艺为：(1)提供硅基底，在硅基底顶表面沉积SiO2材料作为牺牲层，然后通过定义出器件区，仅仅保留器件区下面沉积的SiO 2，其余区域的SiO 2去除；(2)然后在牺牲层上依次形成底电极层、压电层(即AlN或者ZnO)和顶电极，此时如图1所示；(3)由于仅在器件区保留牺牲层、其他区域不保留牺牲层，通过释放工艺使得器件下方悬空，再在与基底相连接处设置锚点结构使得器件主体单独分离出来，器件周围的压电层都去除；(4)利用印章压上去把器件主体粘起来，再转移到其他柔性基底上。
然而，单晶铌酸锂压电层的器件却无法采用类似的工艺来制造。由于常规的溅射、化学气相沉积、外延生长适用于多晶薄膜，但不适用于高质量铌酸锂、钽酸锂单晶薄膜的生产。目前获取高质量单晶薄膜比较成熟的方法是通过晶体离子切片技术生产铌酸锂、钽酸锂单晶薄膜然后再键合到硅片上。若如图1所示先在硬质基底上形成了对应器件区的图形化的牺牲层，上面很难键合单晶铌酸锂薄膜。另外，晶体离子切片技术无法控制应力，使得制备的单晶薄膜存在残余应力，在释放空腔工艺后，残余应力会使得单晶薄膜会发生弯曲或产生裂纹降低器件性能，甚至直接发生断裂导致器件报废。最后，由于干法刻蚀硅基底顶部的过程中，由于干法刻蚀的各向同性，释放出的空腔底部会凹凸不平，容易导致后续转移时器件损坏。
发明内容
有鉴于此，本发明提供一种柔性单晶兰姆波谐振器及其形成方法。
本发明第一方面提出的柔性单晶兰姆波谐振器的形成方法，包括：提供硬质基底；在所述硬质基底之上形成牺牲层；在所述牺牲层之上形成单晶薄膜层；将所述单晶薄膜层划分为器件区、周围区、窗口区和锚结构，所述窗口区用于将所述器件区和所述周围区隔开，所述锚结构用于连接所述器件区和所述周围区，然后在所述器件区之上形成叉指电极；刻蚀去除所述窗口区，保留所述器件区、锚结构和周围区；释放去除所述窗口区、锚结构和器件区下方的牺牲层，以使所述器件区和所述叉指电极在所述锚结构的作用下悬于所述硬质基底上；利用印章粘附所述器件区和所述叉指电极，然后断开所述锚结构从而使所述器件区和所述叉指电极脱离所述硬质基底；提供具有顶部空腔的柔性基底；利用所述印章将所述器件区和所述叉指电极转移至所述柔性基底之上并且覆盖对准所述顶部空腔。
可选地，在形成所述牺牲层的步骤之后并且在形成所述单晶薄膜 层的步骤之前，还包括：在形成所述单晶薄膜层的步骤之前，还包括：形成位于所述单晶薄膜层之下的金属层；在刻蚀去除所述窗口区，保留所述器件区、锚结构和周围区的步骤之后，还包括：去除所述窗口区下方的所述金属层，并且保留所述器件区下方的底电极金属层作为底电极；；在利用印章粘附所述器件区和所述叉指电极的步骤同时，粘附所述底电极；在利用所述印章将所述器件区和所述叉指电极转移至所述柔性基底之上并且覆盖对准所述顶部空腔的步骤同时，转移所述底电极至所述柔性基底之上并且覆盖对准所述顶部空腔。
可选地，在形成单晶薄膜层的步骤之后，还包括：在所述器件区之上、所述叉指电极附近形成空气反射栅。
可选地，所述牺牲层的材料为二氧化硅或者苯并环丁烯。
可选地，所述牺牲层的厚度为0.1μm至10μm。
可选地，所述单晶薄膜层的材料为铌酸锂或者钽酸锂。
可选地，所述单晶薄膜层的厚度为0.1μm至2μm。
可选地，所述锚结构包括多个断点结构。
可选地，所述印章包括压提部和粘附部，其中所述压提部位于所述粘附部之上，所述粘附部横截面尺寸大于所述器件区尺寸并且小于所述周围区的内尺寸，所述压提部横截面尺寸大于所述粘附部横截面尺寸。
可选地，所述柔性单晶谐振器的频率范围在20MHz-2GHz。
本发明的柔性单晶兰姆波谐振器的形成方法，至少具有如下优点： (1)锚结构使得器件区域的压电薄膜与其他部分的压电薄膜连接，保证器件区域在释放工艺中不会漂走；同时锚结构还承载释放空腔工艺后压电薄膜残余应力的释放。(2)在刚性基底与单晶薄膜层之间引入了可以牺牲层，该牺牲层能够通过释放工艺使得在硬质基底上的器件区悬空，而且保证器件区下方是一个平整的平面，这保证用软印章压印转移时器件区不会因为下方平面不平整而损坏，提高转移成功率。
本发明第二方面提出的柔性单晶兰姆波谐振器，该柔性单晶兰姆波谐振器是通过本发明所述的方法得到的。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1是现有的常规压电材料柔性器件在未释放空腔工艺之前的结构示意图；
图2是本发明实施例的柔性单晶兰姆波谐振器的形成方法的流程示意图；
图3是本发明实施例的铌酸锂单晶薄膜层的材料电子衍射图；
图4至图13是本发明实施例之一的柔性单晶兰姆波谐振器的形成方法的过程示意图；
图14至图16是本发明实施例之二的柔性单晶兰姆波谐振器的形成方法的过程示意图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、 “后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
本发明旨在提出带空腔柔性衬底的单晶兰姆波谐振器及其形成方法。带空腔柔性衬底的单晶兰姆波谐振器具有单晶谐振器的高性能的 同时还具有柔性器件可弯曲的特性，使得其具有更宽广的应用领域和非常好的应用前景，柔性衬底的兰姆波谐振器与传统谐振器比较所具有的优势如表1所示。
表1传统兰姆波谐振器与柔性衬底的单晶兰姆波谐振器对比表
技术指标 传统兰姆波谐振器 柔性衬底的单晶兰姆波谐振器
压电材料 AlN，ZnO等 LiNO 3，LiTaO 3,AlN，ZnO等
基底材料 硅/蓝宝石等 PET/PI等
压电薄膜生产工艺 溅射/化学气相沉积 单晶生长后减薄/MOCVD
晶体种类 多晶 单晶
位错密度 >10 12个/cm 2 ＜10 12个/cm 2
材料声波损耗 高 低
材料机电耦合系数 中等 高
谐振器机电耦合系数 较低(<3％) 高(>20％)
滤波器相对带宽(FBW) 窄 宽
滤波器插入损耗(IL) 大 小
弯曲性 不可弯曲 可弯曲
应用领域 传统电子领域 传统电子领域+柔性电子领域
图2是本发明实施例的柔性单晶兰姆波谐振器的形成方法的流程示意图。如图2所示，该方法包括如下步骤：
步骤S1：提供硬质基底。
步骤S2：在硬质基底之上形成牺牲层。
步骤S3：在牺牲层之上形成单晶薄膜层。
步骤S4：将单晶薄膜层划分为器件区、周围区、窗口区和锚结构，窗口区用于将器件区和周围区隔开，锚结构用于连接器件区和周围区，然后在器件区之上形成叉指电极。
步骤S5：刻蚀去除窗口区，保留器件区、锚结构和周围区。
步骤S6：释放去除窗口区、锚结构和器件区下方的牺牲层，以使器件区和叉指电极在锚结构的作用下悬于硬质基底上。
步骤S7：利用印章粘附器件区和叉指电极，然后断开锚结构从而使器件区和叉指电极脱离硬质基底。
步骤S8：提供具有顶部空腔的柔性基底。
步骤S9：利用印章将器件区和叉指电极转移至柔性基底之上并且 覆盖对准顶部空腔。
由上可知，本发明实施例的柔性单晶兰姆波谐振器的形成方法，至少具有如下优点：(1)锚结构使得器件区压电薄膜与周围区压电薄膜连接，保证器件区在释放工艺中不会漂走，同时锚结构还用于承载释放空腔工艺后压电薄膜残余应力释放。(2)在刚性基底与单晶薄膜层之间引入了可以牺牲层，该牺牲层能够通过释放工艺去除，从而使得器件区在硬质基底上悬空，同时保证器件区下方是平整平面，继而保证用印章压印转移时器件区不会因为下方平面不平整而损坏，提高转移成功率。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，在形成所述单晶薄膜层的步骤之前，还包括：形成位于所述单晶薄膜层之下的金属层；在刻蚀去除所述窗口区，保留所述器件区、锚结构和周围区的步骤之后，还包括：去除所述窗口区下方的所述金属层，并且保留所述器件区下方的底电极金属层作为底电极；在利用印章粘附器件区和叉指电极的步骤同时，粘附底电极；在利用印章将器件区和叉指电极转移至柔性基底之上并且覆盖对准顶部空腔的步骤同时，转移底电极至柔性基底之上并且覆盖对准顶部空腔。该实施例中，底电极的存在能够提高谐振器性能。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，在形成单晶薄膜层的步骤之后，还可以包括：在器件区之上、叉指电极附近形成空气反射栅。空气反射栅的存在可以提高器件的性能。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，牺牲层的材料可以为二氧化硅或者苯并环丁烯(Benzocyclobutene，简称BCB)。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，牺牲层的厚度可以为0.1μm至10μm。若牺牲层的厚度小于0.1μm，则单晶薄 膜难以键合到牺牲层上；若牺牲层的厚度高于10μm，则不利于后续释放工艺将其去除。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，单晶薄膜层的材料可以为铌酸锂或者钽酸锂。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，单晶薄膜层的厚度可以为0.1μm至2μm。若单晶薄膜层的厚度小于0.1μm，则制造工艺难度太大，而且太薄后续转移步骤极其容易使器件损坏；若单晶薄膜层的厚度大于2μm，则会使器件柔性变差。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，锚结构可以包括多个断点结构。多个断点结构可以使得锚结构将器件区和周围区轻微连接起来，保障了锚结构在受到外力断裂时的断口整齐，方便分离同时释放掉应力。优选地，锚结构通常设计为细长形状，例如长宽比大于10:1。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，印章可以包括压提部和粘附部。其中压提部位于粘附部之上。粘附部横截面尺寸大于器件区尺寸并且小于周围区的内尺寸。压提部横截面尺寸大于粘附部横截面尺寸。与现有的普通柱状印章相比，普通柱体印章较大，容易把器件区域之外的电极层和压电层一同粘下来，这会大大增加器件损坏率。本发明实施例的印章形状的底表面与器件区大小相匹配，因此释放窗口不用开得太宽，单位面积内能制造更多器件，可以提高单晶压电材料的利用率，增加经济效益。
在本发明实施例的柔性单晶兰姆波谐振器的形成方法中，柔性单晶谐振器的频率范围在20MHz-2GHz。
本发明还提出了柔性单晶兰姆波谐振器，本发明的柔性单晶兰姆 波谐振器是通过本发明公开的方法得到的。
为使本领域技术人员更好地理解，下面结合说明书附图详细陈述本发明实施例的柔性单晶兰姆波谐振器的形成方法的具体过程。
实施例1
提供厚度约为400μm的硅材料的硬质基底101，接着通过化学气相沉积工艺在硬质基底101之上形成厚度为0.1-10μm(优选1μm)的二氧化硅材料的牺牲层102，然后通过离子切片工艺在牺牲层102之上键合厚度为0.1-2μm(优选0.7μm)的铌酸锂材料的单晶薄膜层103。
需要解释的是，离子切片工艺具体是指在在供体铌酸锂晶片正面注入He +离子，使得He +离子注入到铌酸锂晶片的某一深度中并形成一个He +离子层，然后通过加热退火工艺使得He +形成He分子气泡，从而将薄膜层剥离下来。最后利用化学机械抛光(CMP)工艺将铌酸锂薄膜层减薄到指定厚度0.1-2μm优选0.7μm)。该工艺得到的单晶薄膜层103的材料电子衍射图如图3所示。使用透射电子显微镜，利用电子衍射研究压电薄膜的晶格排列。布拉格衍射强度是晶格周期性排列的直接结果，周期性越好，排列越整齐，布拉格衍射强度越大。图3中倒易晶格清晰，没有非晶环的出现，且衍射图显示的是六边形格子图案，表明铌酸锂薄膜为单晶结构。
至此，加工得到的三层材料结构如图4所示。
提供器件版图如图5所示，版图中单晶薄膜层103划分为器件区103A、周围区103B、窗口区103C和锚结构103D。窗口区103B将器件区103A和周围区103B隔开，锚结构103D连接器件区103A和周围区103B。窗口区103C的大小需合理设置，避免原料浪费。锚结构103D通常设置为细长形状，优选地在锚结构103D上设置若干个断点结构，如图6所示。
接着在单晶薄膜层103之上形成多个叉指电极104。叉指电极的数量不定，可以是交替排列的设置信号端(S)和接地端(G)，如图7所示。叉指电极104用于产生横向电场激励谐振器工作。
此外，还可以在单晶薄膜层103的器件区103A之上、叉指电极104附近形成空气反射删105，如图5所示。该空气反射栅105可以使声波传到反射栅处得到反射，提高谐振器性能。
刻蚀去除单晶薄膜层的窗口区103C。然后采用释放艺去除掉牺牲层，即用氢氟酸溶液浸泡或放入气态氢氟酸机台以去除牺牲层102以得到空腔。需要说明的是虽然氟化氢HF最初腐蚀的是窗口区103C下方的二氧化硅，但腐蚀过程中HF可以慢慢扩散，逐步地将器件区103A下方的二氧化硅也释放干净，同时锚结构103D承担了单晶薄膜残余应力的释放，避免了器件区103A因为残余应力释放而出现裂纹。至此，器件区103A下方形成了空腔，器件结构如图8a和图8b所示。具体地，图8a为未经过锚结构的器件切面视图，其对应图5所示版图的水平方向切面图；图8b为经过锚结构的器件切面视图，其对应图5所示版图的垂直方向切面图。需要说明的是出于简便，图8a和图8b中仅示出了叉指电极104，省略了空气反射栅。由图8a和图8b可知，器件区103A悬于硬质基底101上方，并且依靠锚结构103D与周围区103B连接。硬质基底101顶部是平整光滑的。
提供转移印章，该转移印章的切面图如图9a所示，俯视图如图9b所示。转移印章包括上方的压提部A和下方的粘附部B。粘附部A横截面尺寸需要略大于器件区103A并且小于周围区103B的内尺寸，这样可以保证有效地粘附器件区同时又不会过多地粘附到周围区上。压提部B横截面尺寸大于粘附部A横截面尺寸，这样更加方便机械臂夹持转移印章进行转移。
需要说明的是，整个印章转移过程中，叉指电极104以及结构空气反射栅105始终位于器件区103A之上。由于叉指电极104以及结构空气反射栅105的厚度比较薄，因此在下文的部分说明书附图中进行省略、不再示出。
如图10所示，将转移印章与器件区103A对准后施加向下的压力，器件区103A粘附在转移印章上，同时释放了单晶薄膜生长应力，避免了器件区103A因为应力残余而出现裂纹。硬质基底101顶部平整，所以器件区103A被按压至硬质基底101顶部时，也能保持完好无损。
如图11所示，提拉转移印章，锚结构103D受到力而断开，从而将器件区103A脱离了原有的硬质基底101。
提供具有顶部空腔的柔性基底106。然后如图12a至图12c所示，利用转移印章将器件区103A转移至柔性基底106之上并且覆盖对准顶部空腔。最终形成的器件如图13所示。
实施例2
首先，由下至上依次形成如图14所示的四层结构，包括硬质基底层101、牺牲层102、金属层107(厚度约0.1μm)和单晶薄膜层103。然后，参照实施例1中的步骤进行单晶薄膜区域划分、刻蚀窗口，释放空腔。释放工艺去除牺牲层102的二氧化硅后的器件结构如图15所示，器件区103A下方形成了底电极107’。继续参照实施例1中的步骤进行印章转移，将谐振器结构从硬质基底转移到带顶部空腔的柔性基底上。最终得到的器件如图16所示。
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，取决于设计要求和其他因素，可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。

Claims (11)

  1. 一种柔性单晶兰姆波谐振器的形成方法，其特征在于，包括：
    提供硬质基底；
    在所述硬质基底之上形成牺牲层；
    在所述牺牲层之上形成单晶薄膜层；
    将所述单晶薄膜层划分为器件区、周围区、窗口区和锚结构，所述窗口区用于将所述器件区和所述周围区隔开，所述锚结构用于连接所述器件区和所述周围区，然后在所述器件区之上形成叉指电极；
    刻蚀去除所述窗口区，保留所述器件区、锚结构和周围区；
    释放去除所述窗口区、锚结构和器件区下方的牺牲层，以使所述器件区和所述叉指电极在所述锚结构的作用下悬于所述硬质基底上；
    利用印章粘附所述器件区和所述叉指电极，然后断开所述锚结构从而使所述器件区和所述叉指电极脱离所述硬质基底；
    提供具有顶部空腔的柔性基底；
    利用所述印章将所述器件区和所述叉指电极转移至所述柔性基底之上并且覆盖对准所述顶部空腔。
  2. 根据权利要求1所述的方法，其特征在于，
    在形成所述单晶薄膜层的步骤之前，还包括：形成位于所述单晶薄膜层之下的金属层；
    在刻蚀去除所述窗口区，保留所述器件区、锚结构和周围区的步骤之后，还包括：去除所述窗口区下方的所述金属层，并且保留所述器件区下方的底电极金属层作为底电极；
    在利用印章粘附所述器件区和所述叉指电极的步骤同时，粘附所述底电极；
    在利用所述印章将所述器件区和所述叉指电极转移至所述柔性基底之上并且覆盖对准所述顶部空腔的步骤同时，转移所述底电极至所述柔性基底之上并且覆盖对准所述顶部空腔。
  3. 根据权利要求1或2所述的方法，其特征在于，在形成单晶薄膜层的步骤之后，还包括：在所述器件区之上、所述叉指电极附近形成空气反射栅。
  4. 根据权利要求1或2所述的方法，其特征在于，所述牺牲层的材料为二氧化硅或者苯并环丁烯。
  5. 根据权利要求1或2所述的方法，其特征在于，所述牺牲层的厚度为0.1μm至10μm。
  6. 根据权利要求1或2所述的方法，其特征在于，所述单晶薄膜层的材料为铌酸锂或者钽酸锂。
  7. 根据权利要求1或2所述的方法，其特征在于，所述单晶薄膜层的厚度为0.1μm至2μm。
  8. 根据权利要求1或2所述的方法，其特征在于，所述锚结构包括多个断点结构。
  9. 根据权利要求1或2所述的方法，其特征在于，所述印章包括压提部和粘附部，其中所述压提部位于所述粘附部之上，所述粘附部横截面尺寸大于所述器件区尺寸并且小于所述周围区的内尺寸，所述压提部横截面尺寸大于所述粘附部横截面尺寸。
  10. 根据权利要求1或2所述的方法，其特征在于，所述柔性单晶谐振器的频率范围在20MHz-2GHz。
  11. 一种柔性单晶兰姆波谐振器，其特征在于，该柔性单晶兰姆波谐振器是通过权利要求1至10中任一项所述的方法得到的。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111431501A (zh) * 2020-03-31 2020-07-17 中国科学院上海微系统与信息技术研究所 一种兰姆波谐振器及其制备方法
CN114696767A (zh) * 2020-12-25 2022-07-01 杭州左蓝微电子技术有限公司 薄膜体声波谐振器及其制备方法
CN117176104A (zh) * 2023-11-01 2023-12-05 镭友芯科技(苏州)有限公司 基于钽酸锂薄膜的谐振器及其形成方法
CN118017962A (zh) * 2023-05-19 2024-05-10 南京大学 包含贯穿孔的兰姆波谐振器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111555733A (zh) * 2020-05-26 2020-08-18 北京航天微电科技有限公司 一种兰姆波谐振器结构及其制备方法
CN113037245B (zh) * 2021-03-11 2023-02-03 天津大学 基于压电薄膜换能的石英谐振器以及电子设备
CN113171545B (zh) * 2021-04-12 2023-04-07 天津大学 一种液体环境下的微型机器人推进装置
CN113381720B (zh) * 2021-06-29 2023-12-22 南通大学 一种二维模态兰姆波谐振结构、包含其的兰姆波谐振器及其制备方法
CN114301412B (zh) * 2021-12-29 2024-04-30 苏州达波新材科技有限公司 具有改良衬底结构的兰姆波声波器件及其制作方法
CN116318023B (zh) * 2023-04-04 2024-08-16 中国科学院上海微系统与信息技术研究所 兰姆波谐振器及滤波器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057707A (ja) * 2003-08-07 2005-03-03 Sony Corp 薄膜バルク音響共振子およびマイクロ電気機械システムデバイス
US20060228657A1 (en) * 2005-04-06 2006-10-12 Bioscale, Inc. Electrically responsive device
CN103312286A (zh) * 2012-03-07 2013-09-18 太阳诱电株式会社 谐振器及其制造方法、频率滤波器、双工器、电子设备
CN103378817A (zh) * 2012-04-13 2013-10-30 太阳诱电株式会社 滤波器装置、滤波器装置的制造方法和双工器
CN103532513A (zh) * 2012-07-04 2014-01-22 太阳诱电株式会社 兰姆波器件及其制造方法
CN106788306A (zh) * 2017-03-07 2017-05-31 杭州左蓝微电子技术有限公司 一种薄膜体声波谐振器及其制备方法
CN107231138A (zh) * 2016-12-29 2017-10-03 杭州左蓝微电子技术有限公司 带有支撑结构的薄膜体声波谐振器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6626025B2 (en) * 2001-01-26 2003-09-30 General Electric Company Devices and methods for high throughput screening of abrasion resistance of coatings
CN1862958A (zh) * 2005-05-11 2006-11-15 精工爱普生株式会社 兰姆波型高频装置
US7667369B2 (en) * 2006-11-01 2010-02-23 Delaware Capital Formation, Inc. High sensitivity microsensors based on flexure induced frequency effects
WO2014112951A1 (en) * 2013-01-15 2014-07-24 Agency For Science, Technology And Research Dual mode resonator
CN108281363B (zh) * 2018-01-17 2020-04-14 上海科技大学 一种低成本的压电谐振器/传感器封装工艺方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057707A (ja) * 2003-08-07 2005-03-03 Sony Corp 薄膜バルク音響共振子およびマイクロ電気機械システムデバイス
US20060228657A1 (en) * 2005-04-06 2006-10-12 Bioscale, Inc. Electrically responsive device
CN103312286A (zh) * 2012-03-07 2013-09-18 太阳诱电株式会社 谐振器及其制造方法、频率滤波器、双工器、电子设备
CN103378817A (zh) * 2012-04-13 2013-10-30 太阳诱电株式会社 滤波器装置、滤波器装置的制造方法和双工器
CN103532513A (zh) * 2012-07-04 2014-01-22 太阳诱电株式会社 兰姆波器件及其制造方法
CN107231138A (zh) * 2016-12-29 2017-10-03 杭州左蓝微电子技术有限公司 带有支撑结构的薄膜体声波谐振器及其制备方法
CN106788306A (zh) * 2017-03-07 2017-05-31 杭州左蓝微电子技术有限公司 一种薄膜体声波谐振器及其制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111431501A (zh) * 2020-03-31 2020-07-17 中国科学院上海微系统与信息技术研究所 一种兰姆波谐振器及其制备方法
CN111431501B (zh) * 2020-03-31 2023-09-29 中国科学院上海微系统与信息技术研究所 一种兰姆波谐振器及其制备方法
CN114696767A (zh) * 2020-12-25 2022-07-01 杭州左蓝微电子技术有限公司 薄膜体声波谐振器及其制备方法
CN118017962A (zh) * 2023-05-19 2024-05-10 南京大学 包含贯穿孔的兰姆波谐振器
CN117176104A (zh) * 2023-11-01 2023-12-05 镭友芯科技(苏州)有限公司 基于钽酸锂薄膜的谐振器及其形成方法
CN117176104B (zh) * 2023-11-01 2024-01-30 镭友芯科技(苏州)有限公司 基于钽酸锂薄膜的谐振器及其形成方法

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