WO2020050090A1 - Procédé et appareil de gravure - Google Patents

Procédé et appareil de gravure Download PDF

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Publication number
WO2020050090A1
WO2020050090A1 PCT/JP2019/033333 JP2019033333W WO2020050090A1 WO 2020050090 A1 WO2020050090 A1 WO 2020050090A1 JP 2019033333 W JP2019033333 W JP 2019033333W WO 2020050090 A1 WO2020050090 A1 WO 2020050090A1
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Prior art keywords
etching
metal
infiltration
resist
containing gas
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PCT/JP2019/033333
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English (en)
Japanese (ja)
Inventor
一希 山田
雅俊 大和
恭平 小池
英民 八重樫
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東京エレクトロン株式会社
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Publication of WO2020050090A1 publication Critical patent/WO2020050090A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present disclosure relates to an etching method and an etching apparatus.
  • Patent Document 1 discloses a method of using a composition containing a complex containing hafnium or zirconium and a polymerization initiator as a resist film for the purpose of improving the stability over time of a resist pattern. .
  • Patent Literature 2 discloses that a resist pattern formed on a substrate is irradiated with energy rays to cut side chains of the resist pattern in order to improve the line edge roughness of the resist pattern without lowering etching resistance.
  • a substrate processing method is disclosed, which includes a step of performing a treatment agent and a step of causing a treatment agent to enter a resist pattern whose side chains have been cut, and infiltrating a metal through the treatment agent.
  • the present disclosure provides a technique that is advantageous for improving the etching resistance after forming a resist.
  • An etching method includes a film forming step of forming a resist on an etching target, and exposing the metal to the resist by exposing a metal-containing gas containing a metal to the formed resist.
  • FIG. 1 is a flowchart illustrating an example of the overall flow of the etching method according to the embodiment.
  • FIG. 2 is a block diagram illustrating a configuration example of the etching apparatus according to the embodiment.
  • FIG. 3 is a flowchart illustrating an example of a process in an infiltration process according to the embodiment.
  • FIG. 4 is a diagram conceptually illustrating an example of the infiltration step according to the embodiment.
  • FIG. 5 is a graph showing an example of a change in etching resistance of a resist film due to Al infiltration.
  • FIG. 6 is a graph showing an example of a change in etching resistance of a resist film due to Ti infiltration.
  • FIG. 7 is a flowchart illustrating an example of a processing flow when the etching method according to the embodiment is used.
  • FIG. 8 is a diagram illustrating an example of a stacked structure of a stacked body to be subjected to the etching method according to the embodiment.
  • FIG. 9 is a diagram illustrating an example of a change in the stacked structure of the stacked body according to the embodiment.
  • FIG. 10 is a diagram illustrating an example of the state of the SOG film when etching is performed using the resist film according to the comparative example.
  • FIG. 11 is a diagram illustrating an example of a state when the metal infiltration resist film according to the comparative example is peeled from the SOG film.
  • FIG. 1 is a flowchart illustrating an example of the overall flow of the etching method according to the embodiment.
  • the etching method according to the present embodiment includes a film forming step S11, an infiltration step S12, an etching step S13, and a peeling step S14.
  • the film forming step S11 is a step of forming one or more films on a substrate such as a silicon wafer.
  • the film forming step S11 according to the present embodiment includes a step of forming a resist film having selectivity (etching resistance) on the etching target film on the etching target film to be etched.
  • the etching target film may be, for example, an SOG (Spin On Glass) film or the like.
  • the resist film may be, for example, an organic film mainly containing a photosensitive resin.
  • the infiltration step S12 is a step of exposing the resist film formed on the etching target film to a metal-containing gas containing a metal to thereby infiltrate the resist film with the metal.
  • the metal can be, for example, aluminum (Al), titanium (Ti), hafnium (Hf), or the like.
  • the metal-containing gas containing Al may be, for example, trimethylaluminum (TMA) or the like.
  • the metal-containing gas containing Ti can be, for example, tetrakis (dimethylamido) titanium (TDMAT).
  • the etching step S13 is a step of etching the film to be etched through the resist film in which the metal is infiltrated.
  • the method of etching is not particularly limited, but for example, a reactive ion etching (RIE) method can be used.
  • RIE reactive ion etching
  • the stripping step S14 is a step of stripping the resist film in which the metal is infiltrated from the etching target film after the etching (patterning) of the etching target film is completed.
  • the method of removing the resist film is not particularly limited, and for example, a method of dissolving the resist film with an alkaline remover may be used.
  • the etching resistance of the resist film can be improved by exposing the metal film to the metal film by exposing the metal-containing gas to the formed resist film.
  • FIG. 2 is a block diagram illustrating a configuration example of the etching apparatus 1 according to the embodiment.
  • the etching apparatus 1 according to the present embodiment includes a film forming section 11, an infiltration section 12, an etching section 13, and a stripping section 14.
  • the film forming unit 11 is a unit that implements the film forming step S11.
  • the film forming unit 11 may be configured using, for example, a spin coater, a chemical vapor deposition (CVD) apparatus, a sputtering apparatus, or the like.
  • the infiltration processing unit 12 is a unit that realizes the infiltration step S12.
  • the infiltration processing unit 12 includes, for example, a reaction chamber in which an object to be etched (laminate) is placed, a heating device for heating the laminate, an ejection device for ejecting a gas such as a metal-containing gas into the reaction chamber, and a reaction chamber. It can be configured using a ventilating device for ventilation.
  • the etching processing unit 13 is a unit that implements the etching step S13.
  • the etching processing unit 13 can be configured using, for example, a dry etching device, a wet etching device, or the like.
  • the peeling processing unit 14 is a unit that realizes the peeling step S14.
  • the separation processing unit 14 can be configured using, for example, a wet station, an ashing device, or the like.
  • FIG. 3 is a flowchart illustrating an example of a process in an infiltration process according to the embodiment.
  • a substrate a laminate in which an etching target film, a resist film, and the like are laminated
  • S101 a predetermined temperature
  • S102 a metal-containing gas is exposed to the resist film under predetermined conditions
  • S103 a metal-containing gas is purged from the reaction chamber using an inert gas such as N 2 (S103).
  • S104 purging water vapor from the reaction chamber using an inert gas such as N 2 (S105).
  • the cycle including the steps S102 to S105 that is, the step of exposing the metal-containing gas, the step of purging the metal-containing gas, the step of exposing the water vapor, and the step of purging the water vapor has been repeated a predetermined number of times.
  • a determination is made (S106). If the cycle has been repeated a predetermined number of times (S106: Yes), the infiltration step S12 is terminated. If the cycle has not been repeated a predetermined number of times (S106: No), steps S102 to S105 are executed again. You.
  • the temperature of the substrate is the temperature of at least a part of the laminate including the resist film, and may be the surface temperature of the resist film.
  • the “predetermined temperature” is preferably in the range from room temperature to 200 ° C.
  • the “room temperature” is a temperature in a natural state that is not externally heated and cooled, and is, for example, a temperature (for example, 25 ° C.) selected from a range of 1 ° C. to 40 ° C.
  • 200 ° C. exemplified as the upper limit of the temperature of the substrate is a temperature sufficiently higher than the transition temperature of the resist film.
  • ⁇ The“ predetermined conditions ”when exposing the metal-containing gas include the temperature of the substrate, the gas flow rate, the exposure time, and the pressure.
  • the amount of metal infiltration into the resist film increases as the substrate temperature increases, and decreases as the substrate temperature decreases. Further, the infiltration amount increases as the gas flow rate of the metal-containing gas increases, and decreases as the gas flow rate decreases. Further, the amount of infiltration increases as the exposure time of the metal-containing gas to the resist film increases, and decreases as the exposure time decreases. Further, the amount of infiltration increases as the pressure in the reaction chamber increases, and decreases as the pressure decreases.
  • Exposure to water vapor after exposure to a metal-containing gas can promote infiltration.
  • the “predetermined conditions” when exposing the water vapor include the temperature of the substrate, the gas flow rate, the exposure time, and the pressure.
  • the effect of promoting infiltration by water vapor increases as the temperature of the substrate increases, and decreases as the temperature of the substrate decreases.
  • the infiltration promoting effect increases as the gas flow rate of water vapor increases, and decreases as the gas flow rate decreases.
  • the effect of promoting infiltration increases as the exposure time of water vapor to the resist film increases, and decreases as the exposure time decreases.
  • the effect of promoting infiltration increases as the pressure in the reaction chamber increases, and decreases as the pressure decreases.
  • the conditions during exposure to water vapor may be the same as or different from those during exposure to metal-containing gases. May be set as follows.
  • the amount of metal infiltration into the resist film is preferably in the range of 4 atm% to 20 atm%.
  • the amount of infiltration is lower than 4 atomic%, the effect of increasing the etching resistance of the resist film is often not substantially recognized.
  • the infiltration amount is higher than 20 atm%, the organic properties (eg, solubility in an alkaline solution) inherent in the resist film are impaired, and the peelability of the resist film is reduced. It becomes difficult to peel off.
  • the control of the amount of infiltration can be realized by adjusting the conditions at the time of exposure to the metal-containing gas, the conditions at the time of exposure to water vapor, and the number of repetitions of the cycle including steps S102 to S105.
  • the pressure at the time of exposure to the metal-containing gas is preferably in the range of 0.05 Torr to 760 Torr.
  • the pressure is lower than 0.05 Torr, the amount of infiltration is often less than 4 atmic%, and when the pressure is higher than 760 Torr, the amount of infiltration often exceeds 20 atmic%.
  • FIG. 4 is a diagram conceptually illustrating an example of the infiltration step according to the embodiment.
  • states A to C are shown.
  • State A indicates a state in which the metal-containing gas 111 is exposed to the resist film 102 formed on the etching target film 101.
  • the state B indicates a state in which the metal-containing gas 111 is purged with the N 2 gas and then exposed to the steam 112. Then, after purging the steam 112 with N 2 gas, the exposure of the metal-containing gas 111 is performed again.
  • Such number of cycles metal-containing gas exposure ⁇ N 2 purge ⁇ exposure steam ⁇ N 2 purge ⁇ exposure of the metal-containing gas ⁇ ...) previously set (n times) is repeated.
  • State C indicates a state in which the metal 115 has infiltrated into the resist film 102 after the cycle is repeated n times.
  • state C a state is shown in which a part of atoms or molecules forming the organic compound forming the resist film 102 is replaced with the metal 115.
  • the amount of Ti infiltrated can be reduced to about 6 atomic% by performing an infiltration step under the following conditions.
  • TDMAT gas flow rate 100 sccm ⁇ TDMAT exposure time: 5min -Pressure at the time of TDMAT exposure: 7.5 Torr (about 1000 Pa)
  • N 2 gas flow rate during TDMAT purge 50 sccm ⁇ TDMAT purge of N 2 at the time of pressure: 7.5Torr ⁇ TDMAT exposure time of N 2 at the time of the purge: 5min ⁇
  • Gas flow rate of water vapor 100 sccm ⁇ Exposure time of water vapor: 5 min ⁇ Pressure during exposure to water vapor: 7.5 Torr ⁇ Of N 2 at the time of steam purge gas flow rate: 50sccm
  • pressure of N 2 at the time of steam purge 7.5Torr Exposure time of N 2 during steam purge: 5 min ⁇ Number of cycles: 4
  • FIG. 5 is a graph showing an example of a change in etching resistance of a resist film due to Al infiltration.
  • the horizontal axis indicates the etching time (sec)
  • the vertical axis indicates the etching amount of the resist film (the thickness (nm) reduced by the etching).
  • a solid line shows a temporal change of the etching amount of the resist film after Al infiltration
  • a broken line shows a temporal change of the etching amount of the resist film before Al infiltration.
  • the etching amount of the resist film before Al infiltration increases substantially in proportion to the increase of the etching time.
  • the etching amount of the resist film after Al infiltration is generally smaller than the etching amount of the resist film before Al infiltration, and the rate of increase in the etching amount of the resist film after Al infiltration (increase per unit time) Shows a marked decrease in the etching time from around 30 s. That is, it is shown that by infiltrating the resist film with Al, the etching resistance (oxygen plasma resistance) of the resist film with respect to the O 2 -containing gas can be acquired.
  • the improvement in etching resistance as described above can also be realized when metal other than Al is infiltrated.
  • FIG. 6 is a graph showing an example of a change in etching resistance of a resist film due to Ti infiltration.
  • FIG. 6 illustrates the relationship between the type of etching gas and the etching rate.
  • the horizontal axis indicates the type of etching gas, and the vertical axis indicates the etching rate (nm / s) of the resist film (etching rate). Means that the smaller the value, the higher the etching resistance).
  • examples of the etching gas include an O 2 -containing gas, an H 2 -containing gas, a CF 4 -containing gas, a Cl 2 -containing gas, and dHF (dilute hydrofluoric acid). Comparison is made with the etching rate after Ti infiltration.
  • the etching rate after the Ti infiltration is lower than the etching rate before the Ti infiltration.
  • the etching rate of the dHF-containing gas is 0 before and after the Ti infiltration. That is, by infiltrating Ti into the resist film, etching resistance (oxygen plasma resistance, hydrogen plasma resistance, methane plasma resistance, and chlorine resistance to O 2 -containing gas, H 2 -containing gas, CF 4 -containing gas, and Cl 2 -containing gas) is obtained. It has been shown that plasma resistance can be improved acquired.
  • FIG. 7 is a flowchart illustrating an example of a processing flow when the etching method according to the embodiment is used.
  • a process of forming (stacking) a predetermined film (etching target film, resist film, etc.) on a substrate such as a silicon wafer is performed (S201).
  • FIG. 8 is a diagram showing an example of a layered structure of the layered body 200 to be subjected to the etching method according to the embodiment.
  • the laminated body 200 exemplified here has a structure in which an SOC (Spin On Glass) film 202, an SOG (Spin On Glass) film 203, and a resist film 204 are stacked in this order on a silicon wafer 201.
  • the SOG film 203 is an etching target film.
  • a pattern is formed on the resist film 204 formed on the SOG film 203 which is an etching target film (S202).
  • the method for forming the pattern is not particularly limited, but can be performed using, for example, photolithography.
  • the resist film 204 is infiltrated with metal (S203).
  • the SOG film 203 is etched through the resist film 204 in which the metal is infiltrated (S204).
  • the method of etching the SOG film 203 is not particularly limited, but may be, for example, an RIE method using an etching gas such as an O 2 -containing gas. After that, the resist film 204 is stripped from the SOG film 203 (S205).
  • the method for removing the resist film 204 is not particularly limited, but for example, a method in which the resist film 204 is dissolved using an alkaline remover can be used.
  • FIG. 9 is a diagram showing an example of a change in the laminated structure of the laminated body 200 according to the embodiment.
  • FIG. 9 shows states ⁇ to ⁇ .
  • the state ⁇ illustrates the state of the patterned resist film 204.
  • the state ⁇ illustrates the state of the metal-infiltrated resist film 204A in which metal is infiltrated in the patterned resist film 204.
  • the etching resistance of the metal infiltration resist film 204A is higher than that of the resist film 204 before metal infiltration.
  • the amount of metal infiltration into the metal infiltration resist film 204A is preferably in the range of 4 atm% to 20 atm%. As a result, as described above, the etching resistance can be improved without impairing the peelability of the metal infiltration resist film 204A.
  • State ⁇ illustrates a state where the SOG film 203 is etched through the metal infiltration resist film 204A. At this time, since the metal infiltration resist film 204A has a high etching resistance, its thickness is sufficiently maintained during etching.
  • FIG. 10 is a diagram showing an example of the state of the SOG film 203 when etching is performed using the resist film 204 according to the comparative example.
  • the resist film 204 according to this comparative example has no metal infiltrated or has a metal infiltration amount lower than 4 atm% and does not have sufficient etching resistance. In such a case, if the etching time is prolonged, the resist film 204 may completely disappear, and a problem may occur that a portion of the SOG film 203 that should not be etched is etched. On the other hand, such a problem can be suppressed by infiltrating a required portion of the resist film 204 with metal of 4 atomic% or more and improving the etching resistance as in the present embodiment.
  • the state ⁇ illustrates a state in which the metal infiltration resist film 204A is peeled from the etched SOG film 203.
  • the organic properties (such as solubility in an alkaline solution) of the metal infiltration resist film 204A are not impaired, the metal infiltration resist film 204A can be easily peeled from the SOG film 203 using an alkaline stripper or the like. it can.
  • FIG. 11 is a diagram showing an example of a state when the metal infiltration resist film 204A according to the comparative example is peeled off from the SOG film 203.
  • the metal infiltration resist film 204A according to the present comparative example has a metal infiltration amount higher than 20 atm% and organic characteristics are deteriorated.
  • a problem may occur in which the metal infiltration resist film 204A remains on the SOG film 203 even when a stripping process using an alkaline stripping agent or the like is performed.
  • such a problem can be suppressed by setting the metal infiltration amount of the metal infiltration resist film 204A to 20 atm% or less and preventing the releasability from being impaired as in the present embodiment.
  • the present embodiment it is possible to provide a technique advantageous for improving the etching resistance after the formation of the resist. Specifically, by exposing the metal film to a metal-containing gas by exposing the metal film to the resist film after film formation, the etching resistance can be improved acquiredly.
  • the amount of metal infiltration into the resist film can be controlled by adjusting various conditions when performing the step of infiltrating the metal, and by optimizing the amount of infiltration, the etching resistance can be improved and the resist film can be removed. Sex can be compatible.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention porte sur un procédé de gravure comprenant : une étape de formation de film consistant à former un film de réserve sur un objet à graver ; une étape d'infiltration consistant à infiltrer de métal le film de réserve par exposition du film de réserve à un gaz contenant du métal après formation du film de réserve ; et une étape de gravure consistant à graver l'objet à graver dans le film de réserve infiltré de métal.
PCT/JP2019/033333 2018-09-05 2019-08-26 Procédé et appareil de gravure WO2020050090A1 (fr)

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JP2018166022A JP2020038929A (ja) 2018-09-05 2018-09-05 エッチング方法及びエッチング装置
JP2018-166022 2018-09-05

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021022636A (ja) * 2019-07-26 2021-02-18 株式会社アルバック 半導体装置の製造方法
WO2024070683A1 (fr) * 2022-09-27 2024-04-04 東京エレクトロン株式会社 Procédé de formation de film et dispositif de formation de film

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Publication number Priority date Publication date Assignee Title
JP2001102359A (ja) * 1999-09-28 2001-04-13 Toshiba Corp 半導体装置の製造方法
JP2004119772A (ja) * 2002-09-27 2004-04-15 Toshiba Corp 窒化ガリウム系化合物半導体素子の製造方法及び窒化ガリウム系化合物半導体層の加工方法
JP2007115797A (ja) * 2005-10-19 2007-05-10 Tokyo Electron Ltd 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
JP2018049902A (ja) * 2016-09-21 2018-03-29 大日本印刷株式会社 パターン形成方法及び凹凸構造体の製造方法
JP2019054062A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体装置の製造方法および半導体製造装置
JP2019054063A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102359A (ja) * 1999-09-28 2001-04-13 Toshiba Corp 半導体装置の製造方法
JP2004119772A (ja) * 2002-09-27 2004-04-15 Toshiba Corp 窒化ガリウム系化合物半導体素子の製造方法及び窒化ガリウム系化合物半導体層の加工方法
JP2007115797A (ja) * 2005-10-19 2007-05-10 Tokyo Electron Ltd 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
JP2018049902A (ja) * 2016-09-21 2018-03-29 大日本印刷株式会社 パターン形成方法及び凹凸構造体の製造方法
JP2019054062A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体装置の製造方法および半導体製造装置
JP2019054063A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021022636A (ja) * 2019-07-26 2021-02-18 株式会社アルバック 半導体装置の製造方法
JP7242463B2 (ja) 2019-07-26 2023-03-20 株式会社アルバック 半導体装置の製造方法
WO2024070683A1 (fr) * 2022-09-27 2024-04-04 東京エレクトロン株式会社 Procédé de formation de film et dispositif de formation de film

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