WO2020042337A1 - 阵列基板及显示面板 - Google Patents

阵列基板及显示面板 Download PDF

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Publication number
WO2020042337A1
WO2020042337A1 PCT/CN2018/113343 CN2018113343W WO2020042337A1 WO 2020042337 A1 WO2020042337 A1 WO 2020042337A1 CN 2018113343 W CN2018113343 W CN 2018113343W WO 2020042337 A1 WO2020042337 A1 WO 2020042337A1
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WO
WIPO (PCT)
Prior art keywords
region
gate
layer
array substrate
electrically connected
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Application number
PCT/CN2018/113343
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English (en)
French (fr)
Inventor
马蹄遥
方宏
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/337,827 priority Critical patent/US20210327975A1/en
Publication of WO2020042337A1 publication Critical patent/WO2020042337A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/868—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8793—Arrangements for polarized light emission
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present application relates to the field of displays, and in particular, to an array substrate and a display panel.
  • LCD Liquid crystal displays, liquid crystal displays
  • LCD liquid crystal displays
  • the display resolution of small-sized mobile phone display screens in the market is constantly improving, and as the commercialization of virtual display VR becomes more and more mature, high-resolution and high-refresh frequency display products have become the commanding heights of future development.
  • the key to improving the display resolution is to continuously reduce the display size of the TFT device, and conventionally reducing the size of the TFT device is very challenging to improve the reliability of the product.
  • the channel length is a key factor in the preparation of high-resolution array substrates, especially for driving thin film transistors in LCDs and organic electroluminescent diode display devices, whose channel length can reach tens of microns , Will occupy a larger area, is not conducive to the realization of high resolution.
  • the present application provides an array substrate and a display panel to solve the technical problem of low display resolution of the existing display panel.
  • the present application provides an array substrate including:
  • a buffer layer on the substrate is
  • An active layer on the gate insulating layer including a first region parallel to the substrate, a second region parallel to the first inclined plane, and a second region connected to the second region and connected to the first region A third region parallel to the substrate;
  • the source electrode is electrically connected to the first region of the active layer
  • the drain electrode is electrically connected to a third region of the active layer.
  • a first via hole and a second via hole are provided on the interlayer insulation layer, and the source electrode is electrically connected to the first region through the first via hole.
  • the drain is electrically connected to the third region through the second via.
  • the first region includes a first doped region
  • the third region includes a second doped region
  • the source electrode is in contact with the first doped region through a first via hole.
  • the hetero region is electrically connected
  • the drain is electrically connected to the second doped region through a second via.
  • the first gate further includes a second inclined surface corresponding to the first inclined surface.
  • the array substrate further includes a second gate electrode, and the second gate electrode is disposed at a same interval from the first gate electrode.
  • the second grid includes a third inclined surface opposite to the first inclined surface.
  • the active layer further includes a fourth region connected to the third region and parallel to the third inclined plane, and a fourth region connected to the fourth region and parallel to the substrate Fifth zone.
  • the first region includes a first doped region
  • the fifth region includes a third doped region
  • the source is electrically connected to the first doped region.
  • the drain is electrically connected to the third doped region.
  • a cross-section of the first gate and the second gate is trapezoidal, and a cross-section of the first gate is the length of the first gate and the first gate.
  • a cross section perpendicular to the direction, a cross section of the second gate is a cross section perpendicular to a length direction of the second gate and the second gate.
  • the present application also proposes a display panel, which further includes the above-mentioned array substrate and an anode layer, an OLED layer, a cathode layer, a thin film encapsulation layer, a polarizer layer, and a cover plate located on the above-mentioned array substrate.
  • FIG. 1 is a structural diagram of a film layer of an array substrate according to a first embodiment of the present application
  • FIG. 2 is a structural diagram of a first film layer in a gate region in FIG. 1;
  • FIG. 3 is a structural diagram of a second film layer in the gate region in FIG. 1;
  • FIG. 4 is a structural diagram of a film layer of an array substrate according to a second embodiment of the present application.
  • FIG. 5 is a structural diagram of a first film layer in the gate region in FIG. 4;
  • FIG. 6 is a structural diagram of a second film layer in the gate region in FIG. 4;
  • FIG. 7 is a structural diagram of a film layer of a display panel of the present application.
  • FIG. 1 is a structural diagram of a film layer of an array substrate according to an example of the present application.
  • the array substrate 100 includes a substrate 101, and a flexible substrate film layer 102, a buffer layer 103, a first gate 104, a gate insulating layer 105, an active layer 106, an inter-insulating layer 107, and a source-drain layer on the substrate 101.
  • the substrate 101 may be one of a glass substrate, a quartz substrate, and a resin substrate, and is used as a base substrate of the array substrate 100.
  • the substrate 101 is not an essential feature. In other embodiments, the substrate 101 may not be provided.
  • the flexible substrate film layer 102 is located on the substrate 101.
  • the flexible substrate film layer 102 may be a polyimide film as a base of a flexible display panel.
  • the thickness of the flexible substrate film layer 102 is 10-20um.
  • the buffer layer 103 is located on the flexible substrate film layer 102.
  • the buffer layer 103 covers the flexible substrate film layer 102, and cushions downward pressure of the upper film layer.
  • the material of the buffer layer 103 may be silicon oxide, or a composite layer structure of silicon oxide and silicon nitride.
  • the thickness of the buffer layer 103 is 300-800 nm.
  • the first gate 104 is located on the buffer layer 103.
  • the metal material of the first gate 104 may generally be metals such as molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper, or a combination of the above-mentioned metal materials.
  • the metal material of the first gate 104 may be molybdenum.
  • the thickness of the first gate 104 is 500-1000 nm.
  • FIG. 2 is a structural diagram of a first film layer of the gate region in FIG. 1.
  • the first grid 104 includes a first inclined surface aa and a second inclined surface bb.
  • a cross-section of the first gate 104 may be trapezoidal.
  • An included angle between the first inclined surface and the substrate 101 is A, and an included angle between the second inclined surface and the substrate 101 is B, 45 ° ⁇ A ⁇ 90 °, 45 ° ⁇ B ⁇ 90 °.
  • a cross-section of the first grid 104 is a cross-section perpendicular to a longitudinal direction of the first grid 104 and the first grid 104.
  • FIG. 3 is a structural diagram of a second film layer in the gate region in FIG. 1.
  • the gate insulating layer 105 is formed on the first gate 104 to cover the first gate 104.
  • the gate insulating layer 105 is mainly used to isolate the first gate 104 from other metal layers.
  • a material of the gate insulating layer 105 may be silicon nitride, or silicon oxide, silicon oxynitride, or the like.
  • the active layer 106 is formed on the gate insulating layer 105, and the active layer 106 is made of polysilicon.
  • the active layer 106 includes a first region 1061 parallel to the substrate 101, a second region 1062 parallel to the first inclined surface, and a first region 1062 connected to the second region 1062 and parallel to the substrate. Three zones 1063.
  • the active layer 106 further includes a first doped region 1066 and a second doped region 1067.
  • the first doped region 1066 and the second doped region 1067 are located on two sides of the active layer 106.
  • the first doped region 1066 is located in the first region 1061, that is, on the gate insulating layer 105 on the first gate 104.
  • the second doped region 1067 is located in the third region 1063, and is far from the gate insulating layer 105 of the first gate 104.
  • the inter-insulating layer 107 is formed on the active layer 106, and the inter-insulating layer 107 covers the active layer 106.
  • the inter-insulating layer 107 is mainly used to isolate the active layer 106 and the source-drain layer 108.
  • the source-drain layer 108 is formed on the inter-insulating layer 107.
  • the source-drain layer includes a source 1081 and a drain 1082.
  • the metal material of the source-drain layer 108 may be metal such as molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, copper, or titanium-aluminum alloy. combination.
  • the source-drain layer 108 may be a titanium aluminum alloy.
  • the flat layer 109 is formed on the source-drain layer 108, and the flat layer 109 covers the source-drain layer 108 and is mainly used to ensure the flatness of the film layer structure.
  • the array substrate 100 further includes a first via hole 1101 and a second via hole 1102 disposed at intervals on the inter-insulating layer 107, and the source electrode 1081 passes through the first via hole 1101. Is electrically connected to the first region 1061, and the drain electrode 1082 is electrically connected to the third region 1063 through the second via hole 1102.
  • the source electrode 1081 is electrically connected to the first doped region 1066 through a first via hole 1101, and the drain electrode 1082 is electrically connected to the second doped region 1067 through a second via hole 1102.
  • FIG. 4 is a structural diagram of a film layer of an array substrate according to a second embodiment of the present application.
  • This embodiment is the same as or similar to the first embodiment, except that:
  • the array substrate 200 further includes a second gate electrode 211.
  • the second gate electrode 211 and the first gate electrode 204 are disposed at the same interval.
  • the second gate electrode 211 and the first gate electrode 204 are made of the same metal layer in the same mask process.
  • FIG. 5 is a structural diagram of a first film layer in the gate region in FIG. 4.
  • the second grid 211 includes a third slope cc corresponding to the first slope aa of the first grid 201.
  • a cross-section of the second gate 211 is trapezoidal.
  • the cross-sectional shapes of the first gate 204 and the second gate 211 may be the same or different.
  • the first grid 204 and the second grid 211 have the same cross-sectional shape.
  • An included angle between the third inclined surface cc and the substrate 201 is C, and 45 ° ⁇ C ⁇ 90 °. In one embodiment, 45 ° ⁇ C ⁇ 80 °.
  • a cross-section of the second gate electrode 211 is a cross-section perpendicular to a longitudinal direction of the second gate electrode 211 and the second gate electrode 211.
  • FIG. 6 is a structural diagram of a second film layer in the gate region in FIG. 4.
  • the active layer 206 is U-shaped.
  • the active layer 206 includes a first region 2061 parallel to the substrate 201, a second region 2062 parallel to the first inclined plane, and a first region 2062 connected to the second region 2062 and parallel to the substrate 201.
  • the first region 2061 includes a first doped region 2066
  • the fifth region 2065 includes a third doped region 2068.
  • the source electrode 2081 is electrically connected to the first doped region 2066
  • the drain electrode 2082 is electrically connected to the third doped region 2068.
  • the active layer is formed by a crystallization method using excimer laser annealing (ELA). Because the gate of the array substrate has a certain slope angle, the active layer formed also has the same slope angle as the gate. Therefore, this application needs to adjust the exit angle of the laser emitting section of the corresponding device to a certain extent, that is, without changing the optical beam splitting path, an optical angle adjustment lens group is added to deflect the final exit angle of the laser.
  • ELA excimer laser annealing
  • the deflection angle is 10 to 45 °, so that the laser beam is directly irradiated to the slope edge edge of the gate to ensure the uniformity of the crystal in the vertical region of the active layer 106.
  • FIG. 7 is a structural diagram of a film layer of a display panel of the present application.
  • the display panel 300 further includes the above-mentioned array substrate 100 and a light-emitting device layer 400, a thin-film encapsulation layer 115, a polarizer layer (not shown), and a cover plate (not shown) on the array substrate 100.
  • the array substrate may be any one of the first embodiment and the second embodiment, and the specific structures are not described in detail one by one, and an array substrate of a specific embodiment is taken as an example for description below.
  • the light emitting device layer 400 includes an anode layer 112, a light emitting layer 113, and a cathode layer 114 on the array substrate 100.
  • the anode layer 112 is located on a flat layer 109 in the array substrate 100.
  • the anode layer 112 includes at least two anodes arranged in an array.
  • the OLED device is a top emission OLED device, and the OLED device is a white light OLED device that emits white light. Therefore, the anode layer 112 is a non-transparent light-blocking layer.
  • the light emitting layer 113 is located on the anode layer 112.
  • the light emitting layer 113 includes a plurality of light emitting units, and adjacent light emitting units are separated by the pixel definition layer 116 to prevent color crosstalk.
  • the cathode layer 114 is located on the light-emitting layer 113.
  • the cathode layer 114 is a transparent material, so that light emitted from the light-emitting layer 113 is projected outward through the cathode layer 114.
  • the thin film encapsulation layer 115 is located on the cathode layer 114.
  • the thin-film encapsulation layer 115 is used to block external water and oxygen and prevent external water vapor from eroding the organic light-emitting layer.
  • the thin film encapsulation layer 115 includes at least one organic layer 1151 and at least one inorganic layer 1152 alternately stacked.
  • the thin-film encapsulation layer 115 includes an organic layer 1151 and two inorganic layers 1152 alternately arranged.
  • the present application provides an array substrate and a display panel.
  • the display panel includes an array substrate, and the array substrate includes a gate and an active layer having a slope angle.
  • the active layer includes a first region parallel to the substrate, a second region parallel to the first inclined surface, and a third region connected to the second region and parallel to the substrate.
  • by setting the active layer in a bent shape a projection length of the active layer on the substrate is reduced, an area of a thin film transistor unit in each of the array substrates is reduced, and an increase is increased.
  • the number of thin film transistor units in the array substrate improves the resolution of the display panel.

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Abstract

一种阵列基板（100）及显示面板（300），显示面板（300）包括阵列基板（100），阵列基板（100）包括具有一坡角的栅极（104）和有源层（106）。有源层（106）包括与基板（101）平行的第一区域（1061）、与第一斜面（aa）平行的第二区域（1062）及与第二区域（1062）相连并与基板（101）平行的第三区域（1063）。

Description

阵列基板及显示面板 技术领域
本申请涉及显示器领域，特别涉及一种阵列基板及显示面板。
 背景技术
LCD（Liquid crystal displays，液晶显示器）是一种被广泛应用的平板显示器，主要是通过液晶开关调制背光源光场强度来实现画面显示。
目前市场上小尺寸手机显示屏的显示分辨率在不断提高，并且随着虚拟显示VR的商业化越来越成熟，高分辨高刷新频率的显示产品成为未来发展的制高点。对于提高显示分辨率的关键在于不断缩小TFT器件的显示尺寸，而常规性的对TFT器件进行尺寸缩减，对于产品的可靠性提高挑战性很大。
另外，在高分辨率的阵列基板制备过程中，沟道长度是一个关键因素，特别是对LCD和有机电致发光二极管显示器件中的驱动薄膜晶体管来说，其沟道长度可达几十微米，将占用较大的面积，不利于高分辨的实现。
 技术问题
本申请提供一种阵列基板及显示面板，以解决现有显示面板显示分辨率低的技术问题。
 技术解决方案
本申请提供一种阵列基板，其包括：
基板；
位于所述基板上的缓冲层；
位于所述缓冲层上的第一栅极，所述第一栅极包括第一斜面；
位于所述第一栅极上的栅绝缘层；
位于所述栅绝缘层上的有源层，所述有源层包括与所述基板平行的第一区域、与所述第一斜面平行的第二区域及与所述第二区域相连并与所述基板平行的第三区域；
位于所述有源层上的间绝缘层；
位于所述间绝缘层上的源极和漏极，所述源极和漏极分别与所述有源层电连接；
位于所述源极和所述漏极上的平坦层。
在本申请的的阵列基板中，所述源极与所述有源层的所述第一区域电连接，所述漏极与所述有源层的第三区域电连接。
在本申请的的阵列基板中，所述间绝缘层上设有间隔设置的第一过孔和第二过孔，所述源极通过所述第一过孔与所述第一区域电连接，所述漏极通过所述第二过孔与所述第三区域电连接。
在本申请的的阵列基板中，所述第一区域包括有第一掺杂区，所述第三区域包括有第二掺杂区，所述源极通过第一过孔与所述第一掺杂区电连接，所述漏极通过第二过孔与所述第二掺杂区电连接。
在本申请的的阵列基板中，所述第一栅极还包括与所述第一斜面对应的第二斜面。
在本申请的的阵列基板中，所述阵列基板还包括第二栅极，所述第二栅极与所述第一栅极同层间隔设置。
在本申请的的阵列基板中，所述第二栅极包括与所述第一斜面相对的第三斜面。
在本申请的的阵列基板中，所述有源层还包括与所述第三区域连接并与所述第三斜面平行的第四区域，及与所述第四区域连接并与所述基板平行的第五区域。
在本申请的的阵列基板中，所述第一区域包括第一掺杂区域，所述第五区域包括第三掺杂区域，所述源极与所述第一掺杂区电连接，所述漏极与所述第三掺杂区电连接。
在本申请的的阵列基板中，所述第一栅极和第二栅极的剖面为梯形，所述第一栅极的剖面为与所述第一栅极以及所述第一栅极的长度方向垂直的截面，所述第二栅极的剖面为与所述第二栅极以及所述第二栅极的长度方向垂直的截面。
本申请还提出了一种显示面板，所述显示面板还包括上述阵列基板以及位于上述阵列基板上的阳极层、OLED层、阴极层、薄膜封装层、偏光片层、盖板。
 有益效果
本申请通过将所述有源层设置为弯折形，使得所述有源层在所述基板上的投影长度减小，减小了每一所述阵列基板中薄膜晶体管单元的面积，增加了所述阵列基板中薄膜晶体管单元的数量，提高了显示面板的分辨率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例一阵列基板的膜层结构图；
图2为图1中栅极区域第一种膜层结构图；
图3为图1中栅极区域第二种膜层结构图；
图4为本申请实施例二阵列基板的膜层结构图；
图5为图4中栅极区域第一种膜层结构图；
图6为图4中栅极区域第二种膜层结构图；
图7为本申请一种显示面板的膜层结构图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
实施例一
请参阅图1，图1为本申请实施例一阵列基板的膜层结构图。
所述阵列基板100包括基板101、及位于所述基板101上的柔性基板薄膜层102、缓冲层103、第一栅极104、栅绝缘层105、有源层106、间绝缘层107、源漏极层108以及平坦层109。
本一种实施例中，所述基板101可以为玻璃基板、石英基板、树脂基板等中的一种，作为所述阵列基板100的衬底基板。
在一种实施例中，所述基板101并不是必要特征，在其他实施例中，也可不设置所述基板101。
所述柔性基板薄膜层102位于所述基板101上。
在一种实施例中，所述柔性基板薄膜层102可以为聚酰亚胺薄膜，作为柔性显示面板的基底。所述柔性基板薄膜层102的厚度为10~20um。
所述缓冲层103位于所述柔性基板薄膜层102上，所述缓冲层103覆盖所述柔性基板薄膜层102，缓冲上层膜层向下的压力。
在一种实施例中，所述缓冲层103的材料可以为氧化硅，或氧化硅与氮化硅的复合层结构。
在一种实施例中，所述缓冲层103的厚度为300~800nm。
所述第一栅极104位于所述缓冲层103上。所述第一栅极104的金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属，也可以使用上述几种金属材料的组合物。
在一种实施例中，所述第一栅极104的金属材料可以为钼。
在一种实施例中，所述第一栅极104的厚度为500~1000nm。
请参阅图2，图2为图1中栅极区域第一种膜层结构图。
所述第一栅极104包括第一斜面aa和第二斜面bb。
在一种实施例中，所述第一栅极104的剖面可以为梯形。
所述第一斜面与所述基板101的夹角为A，所述第二斜面与所述基板101的夹角为B，45°≤A＜90°，45°≤B＜90°。
在一种实施例中，45°≤A≤80°，45°≤B≤80°，且夹角A和夹角B可以相等。所述第一栅极104的剖面为与所述第一栅极104以及所述第一栅极104的长度方向垂直的截面。
请参照图3，图3为图1中栅极区域第二种膜层结构图。
请参照图1和图3，所述栅绝缘层105形成于所述第一栅极104上，将所述第一栅极104覆盖。所述栅绝缘层105主要用于将所述第一栅极104与其他金属层隔离。
在一种实施例中，所述栅绝缘层105的材料可以为氮化硅，也可以为氧化硅和氮氧化硅等。
所述有源层106形成于所述栅绝缘层105上，所述有源层106由多晶硅构成。所述有源层106包括与所述基板101平行的第一区域1061、与所述第一斜面平行的第二区域1062、及与所述第二区域1062相连接并与所述基板平行的第三区域1063。
所述有源层106还包括第一掺杂区1066和第二掺杂区1067，所述第一掺杂区1066和所述第二掺杂区1067位于所述有源层106的两侧。
在一种实施例中，所述第一掺杂区1066位于所述第一区域1061内，即所述第一栅极104上的所述栅绝缘层105上。所述第二掺杂区1067位于所述第三区域1063内，远离所述第一栅极104的所述栅绝缘层105上。
所述间绝缘层107形成于所述有源层106上，所述间绝缘层107将所述有源层106覆盖。所述间绝缘层107主要用于将所述有源层106和所述源漏极层108隔离。
所述源漏极层108形成于所述间绝缘层107上，所述源漏极层包括源极1081和漏极1082。
在一种实施例中，所述源漏极层108的金属材料可以采用钼、铝、铝镍合金、钼钨合金、铬、铜或钛铝合金等金属，也可以使用上述几种金属材料的组合物。
在一种实施例中，所述源漏极层108的可以为钛铝合金。
所述平坦层109形成于所述源漏极层108上，所述平坦层109覆盖所述源漏极层108，主要用于保证膜层结构的平整性。
在一种实施例中，所述阵列基板100还包括在所述间绝缘层上107间隔设置的第一过孔1101和第二过孔1102，所述源极1081通过所述第一过孔1101与所述第一区域1061电连接，所述漏极1082通过所述第二过孔1102与所述第三区域1063电连接。
所述源极1081通过第一过孔1101与所述第一掺杂区1066电连接，所述漏极1082通过第二过孔1102与所述第二掺杂区1067电连接。
实施例二
请参阅图4，图4为本申请实施例二阵列基板的膜层结构图。
本实施例与具体实施例一相同或相似，不同之处在于：
所述阵列基板200还包括第二栅极211，所述第二栅极211与所述第一栅极204同层间隔设置。所述第二栅极211与所述第一栅极204由同一金属层在同一道光罩制程工艺中制成。
请参阅图5，图5为图4中栅极区域第一种膜层结构图。
所述第二栅极211包括与所述第一栅极201的第一斜面aa对应的第三斜面cc。
在一种实施例中，所述第二栅极211的剖面为梯形。
在一种实施例中，所述第一栅极204和所述第二栅极211的剖面形状可以相同或不同。
在一种实施例中，所述第一栅极204和所述第二栅极211的剖面形状大小相同。
所述第三斜面cc与所述基板201的夹角为C，45°≤C＜90°。在一种实施例中，45°≤C≤80°。
所述第二栅极211的剖面为与所述第二栅极211以及所述第二栅极211的长度方向垂直的截面。
请参阅图6，图6为图4中栅极区域第二种膜层结构图。
所述有源层206呈U形。所述有源层206包括与所述基板201平行的第一区域2061、与所述第一斜面平行的第二区域2062、与所述第二区域2062相连接并与所述基板201平行的第三区域2063、与所述第三区域2063连接并与所述第三斜面平行的第四区域2064、及与所述第四区域2064连接并与所述基板201平行的第五区域2065。所述第一区域2061包括第一掺杂区域2066，所述第五区域2065包括第三掺杂区域2068。所述源极2081与所述第一掺杂区2066电连接，所述漏极2082与所述第三掺杂区2068电连接。
对于实施例一和实施例二，所述有源层通过采用准分子激光退火（ELA）的结晶方式形成。由于所述阵列基板的栅极具有一定坡角，导致形成的有源层也具有与所述栅极相同的坡角。因此，本申请需要对相应设备激光发出段的出射角度进行一定调整，即在不改变光学分光路径的情况下，增加光学角度调整镜组，使激光最后的出光角度进行偏转。
在一种实施例中，偏转角度为10~45°，使激光直接照射到栅极的坡角边缘，保证所述有源层106垂直区域结晶的均一性。
请参阅图7，图7为本申请一种显示面板的膜层结构图。
所述显示面板300还包括上述阵列基板100以及位于上述阵列基板100上的发光器件层400、薄膜封装层115、偏光片层（未画出）、盖板（未画出）。
所述阵列基板可以为实施例一和实施例二任一种，具体结构不再一一赘述，下面以具体实施例一种的阵列基板为例进行说明。
所述发光器件层400包括位于所述阵列基板100上的阳极层112、发光层113及阴极层114。
所述阳极层112位于所述阵列基板100中的平坦层109上。所述阳极层112包括至少两个成阵列排布的阳极。
在一种实施例中，所述OLED器件为顶发射型OLED器件，所述OLED器件为发射白光的白光OLED器件。因此，所述阳极层112非透明的挡光层。
所述发光层113位于所述阳极层112上。所述发光层113包括多个发光单元，相邻的发光单元被像素定义层116所分离，防止颜色的串扰。
所述阴极层114位于所述发光层113上。
在一种实施例中，所述阴极层114为透明材料，使所述发光层113发出的光线经过所述阴极层114向外投射。
所述薄膜封装层115位于所述阴极层114上。所述薄膜封装层115用于阻隔外界水氧气，防止外部水汽对有机发光层的侵蚀。所述薄膜封装层115包括至少一有机层1151和至少一无机层1152交替叠加构成。
在一种实施例中，所述薄膜封装层115包括一有机层1151和两层无机层1152交替排列。
本申请提供一种阵列基板及显示面板，所述显示面板包括阵列基板，所述阵列基板包括具有一坡角的栅极和有源层。所述有源层包括与所述基板平行的第一区域、与所述第一斜面平行的第二区域及与所述第二区域相连并与所述基板平行的第三区域。本申请通过将所述有源层设置为弯折形，使得所述有源层在所述基板上的投影长度减小，减小了每一所述阵列基板中薄膜晶体管单元的面积，增加了所述阵列基板中薄膜晶体管单元的数量，提高了显示面板的分辨率。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种阵列基板，其包括：
    基板；
    位于所述基板上的缓冲层；
    位于所述缓冲层上的第一栅极，所述第一栅极包括第一斜面；
    位于所述第一栅极上的栅绝缘层；
    位于所述栅绝缘层上的有源层，所述有源层包括与所述基板平行的第一区域、与所述第一斜面平行的第二区域及与所述第二区域相连并与所述基板平行的第三区域；
    位于所述有源层上的间绝缘层；
    位于所述间绝缘层上的源极和漏极，所述源极和漏极分别与所述有源层电连接；
    位于所述源极和所述漏极上的平坦层。
  2. 根据权利要求1所述的阵列基板，其中，所述源极与所述有源层的所述第一区域电连接，所述漏极与所述有源层的第三区域电连接。
  3. 根据权利要求1所述的阵列基板，其中，所述间绝缘层上设有间隔设置的第一过孔和第二过孔，所述源极通过所述第一过孔与所述第一区域电连接，所述漏极通过所述第二过孔与所述第三区域电连接。
  4. 根据权利要求3所述的阵列基板，其中，所述第一区域包括有第一掺杂区，所述第三区域包括有第二掺杂区，所述源极通过第一过孔与所述第一掺杂区电连接，所述漏极通过第二过孔与所述第二掺杂区电连接。
  5. 根据权利要求1所述的阵列基板，其中，所述第一栅极还包括与所述第一斜面对应的第二斜面。
  6. 根据权利要求1所述的阵列基板，其中，所述阵列基板还包括第二栅极，所述第二栅极与所述第一栅极同层间隔设置。
  7. 根据权利要求6所述的阵列基板，其中，所述第二栅极包括与所述第一斜面相对的第三斜面。
  8. 根据权利要求7所述的阵列基板，其中，所述有源层还包括与所述第三区域连接并与所述第三斜面平行的第四区域，及与所述第四区域连接并与所述基板平行的第五区域。
  9. 根据权利要求8所述的阵列基板，其中，所述第一区域包括第一掺杂区域，所述第五区域包括第三掺杂区域，所述源极与所述第一掺杂区电连接，所述漏极与所述第三掺杂区电连接。
  10. 根据权利要求7所述的阵列基板，其中，所述第一栅极和第二栅极的剖面为梯形，所述第一栅极的剖面为与所述第一栅极以及所述第一栅极的长度方向垂直的截面，所述第二栅极的剖面为与所述第二栅极以及所述第二栅极的长度方向垂直的截面。
  11. 一种显示面板，所述显示面板还包括阵列基板及位于所述阵列基板上的发光器件层、薄膜封装层、偏光片层以及盖板，其中，所述阵列基板包括：
    基板；
    位于所述基板上的缓冲层；
    位于所述缓冲层上的第一栅极，所述第一栅极包括第一斜面；
    位于所述第一栅极上的栅绝缘层；
    位于所述栅绝缘层上的有源层，所述有源层包括与所述基板平行的第一区域、与所述第一斜面平行的第二区域及与所述第二区域相连并与所述基板平行的第三区域；
    位于所述有源层上的间绝缘层；
    位于所述间绝缘层上的源极和漏极，所述源极和漏极分别与所述有源层电连接；
    位于所述源极和所述漏极上的平坦层。
  12. 根据权利要求11所述的显示面板，其中，所述源极与所述有源层的所述第一区域电连接，所述漏极与所述有源层的第三区域电连接。
  13. 根据权利要求11所述的显示面板，其中，所述间绝缘层上设有间隔设置的第一过孔和第二过孔，所述源极通过所述第一过孔与所述第一区域电连接，所述漏极通过所述第二过孔与所述第三区域电连接。
  14. 根据权利要求13所述的显示面板，其中，所述第一区域包括有第一掺杂区，所述第三区域包括有第二掺杂区，所述源极通过第一过孔与所述第一掺杂区电连接，所述漏极通过第二过孔与所述第二掺杂区电连接。
  15. 根据权利要求11所述的显示面板，其中，所述第一栅极还包括与所述第一斜面对应的第二斜面。
  16. 根据权利要求11所述的显示面板，其中，所述阵列基板还包括第二栅极，所述第二栅极与所述第一栅极同层间隔设置。
  17. 根据权利要求16所述的显示面板，其中，所述第二栅极包括与所述第一斜面相对的第三斜面。
  18. 根据权利要求17所述的显示面板，其中，所述有源层还包括与所述第三区域连接并与所述第三斜面平行的第四区域，及与所述第四区域连接并与所述基板平行的第五区域。
  19. 根据权利要求18所述的显示面板，其中，所述第一区域包括第一掺杂区域，所述第五区域包括第三掺杂区域，所述源极与所述第一掺杂区电连接，所述漏极与所述第三掺杂区电连接。
  20. 根据权利要求17所述的显示面板，其中，所述第一栅极和第二栅极的剖面为梯形，所述第一栅极的剖面为与所述第一栅极以及所述第一栅极的长度方向垂直的截面，所述第二栅极的剖面为与所述第二栅极以及所述第二栅极的长度方向垂直的截面。
PCT/CN2018/113343 2018-08-30 2018-11-01 阵列基板及显示面板 WO2020042337A1 (zh)

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