WO2020032005A1 - ウェーハの検査方法および検査装置 - Google Patents

ウェーハの検査方法および検査装置 Download PDF

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Publication number
WO2020032005A1
WO2020032005A1 PCT/JP2019/030844 JP2019030844W WO2020032005A1 WO 2020032005 A1 WO2020032005 A1 WO 2020032005A1 JP 2019030844 W JP2019030844 W JP 2019030844W WO 2020032005 A1 WO2020032005 A1 WO 2020032005A1
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Prior art keywords
wafer
defect
intensity
profile
inspection
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PCT/JP2019/030844
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English (en)
French (fr)
Japanese (ja)
Inventor
達弥 長田
重 醍醐
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株式会社Sumco
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Application filed by 株式会社Sumco filed Critical 株式会社Sumco
Priority to DE112019003985.7T priority Critical patent/DE112019003985T5/de
Priority to CN201980053272.9A priority patent/CN112639451B/zh
Priority to KR1020207034675A priority patent/KR102482538B1/ko
Publication of WO2020032005A1 publication Critical patent/WO2020032005A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/18—Investigating the presence of flaws defects or foreign matter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws

Definitions

  • the present invention relates to a wafer inspection method and an inspection apparatus for inspecting a silicon wafer or a silicon epitaxial wafer for defects.
  • Small cracks may occur on silicon wafers during manufacturing and transport.
  • infrared illumination light is supplied to a silicon wafer, and a circularly polarized light component of the infrared illumination light beam is emitted by a circularly polarized light filter and transmitted through the circularly polarized light filter. Imaging the circularly polarized light component of the beam reflected by the silicon wafer, and calculating the image data of the circularly polarized light component of the imaged beam.
  • Patent Document 1 a method of inspecting the presence or absence of a defect such as a crack by utilizing the fact that non-polarized light generated by irregular reflection at a crack is transmitted through a circularly polarizing filter without using it.
  • defects such as pinhole defects and twin defects introduced during crystal growth, slip defects introduced during wafer heat treatment, and scratches introduced during wafer transport are included in the silicon wafer. May occur.
  • defects reaching from the back surface to the front surface of the wafer defects reaching from the back surface to the front surface of the wafer
  • defects existing only on the front surface or the back surface of the wafer (front surface) defects existing only on the front surface or the back surface of the wafer (front surface) Defects that do not penetrate to the wafer), and exist only inside the wafer and can be classified as defects that cannot be seen from the front and back surfaces of the wafer.
  • the problem to be solved by the present invention is to provide a wafer inspection method and an inspection apparatus capable of identifying a defect reaching from the back surface to the front surface of the wafer, a defect existing only on the front surface or the back surface, or a defect existing only inside the wafer.
  • the present invention irradiates an infrared or X-ray to the inspection surface of the wafer to be inspected, Detect the intensity of the transmitted light of the infrared or X-rays transmitted through the inspection surface, create an in-plane distribution diagram of the intensity of the transmitted light, Identify the position of the defect from the in-plane distribution map of the intensity, At the position of the defect, the intensity per a predetermined area that divides the inspection surface is detected, Determine the profile of the histogram showing the relationship between the intensity per predetermined area and its frequency, The object is solved by a wafer inspection method for identifying a defect from the profile of the histogram.
  • the present invention also irradiates infrared or X-rays to the inspection surface of the wafer to be inspected, Detecting the intensity of the transmitted light of the infrared or X-rays transmitted through the wafer, to create an in-plane distribution diagram of the intensity of the transmitted light, Identify the position of the defect from the in-plane distribution map of the intensity, At the position of the defect, the intensity per a predetermined area that divides the inspection surface is detected, Find the difference in intensity per the predetermined area, Determine the profile of the histogram indicating the relationship between the difference in intensity per predetermined area and its frequency, The object is solved by a wafer inspection method for identifying a defect from the profile of the histogram.
  • an irradiation unit for irradiating infrared or X-rays to the inspection surface of the wafer to be inspected, Detecting the intensity of the infrared or X-ray transmitted light transmitted through the wafer, creating an in-plane distribution map of the intensity of the transmitted light, and identifying a defect position from the in-plane distribution map of the intensity.
  • an intensity detection unit that detects the intensity per predetermined area that divides the inspection surface
  • a profile generation unit that obtains a profile of a histogram indicating a relationship between the intensity per predetermined area and the frequency thereof
  • an irradiation unit for irradiating infrared or X-rays to the inspection surface of the wafer to be inspected
  • a defect that detects the intensity of the transmitted light of the infrared ray or the X-ray transmitted through the wafer creates an in-plane distribution map of the intensity of the transmitted light, and specifies the position of the defect from the in-plane distribution map of the intensity.
  • a position identification unit At the position of the identified defect, an intensity detection unit that detects the intensity per predetermined area that divides the inspection surface, A difference calculation unit for obtaining a difference in intensity per the predetermined area, A profile generation unit that obtains a profile of a histogram indicating a relationship between the difference in intensity per predetermined area and the frequency,
  • a wafer inspection apparatus including: a determination unit that identifies a defect from a profile of the histogram.
  • the number of peaks of the profile is 1, it is determined that there is a defect reaching from the back surface of the wafer to the inspection surface,
  • the number of peaks in the profile is 2, it can be determined that there is no defect on the inspection surface and the defect does not reach the inspection surface from the back surface of the wafer.
  • the number of peaks in the intensity distribution profile is 2
  • the depth of a defect from the back surface of the wafer increases. It can also be determined that it is deep.
  • the wafer includes at least one of a mirror-polished wafer, a heat-treated wafer, and an epitaxial wafer.
  • the present inventors regarding the defect that reaches from the back surface to the front surface of the wafer, and the defect that does not reach from the back surface to the front surface of the wafer, when examining and creating a histogram of the intensity of infrared transmitted light near these defects,
  • the number of peaks in the histogram profile is 1.
  • the histogram is used. It was found that the number of peaks in the profile was 2. Therefore, the defect can be identified by analyzing the histogram profile of the infrared transmission light. By performing such identification, there is an advantage that visual or microscopic surface inspection can be omitted.
  • a defect that cannot be seen particularly from the surface side cannot be confirmed visually or by a surface inspection using a microscope, which is also advantageous in this respect.
  • FIG. 1 It is a block diagram showing one embodiment of a wafer inspection device concerning the present invention.
  • (A) is a cross-sectional view showing a defect reaching from the back surface to the front surface of the wafer, and
  • (B) is a diagram showing a frequency profile of intensity of transmitted light or intensity difference obtained at that time.
  • (A) is a cross-sectional view showing a defect only on the back surface of the wafer, and
  • (B) is a diagram showing a frequency profile of the intensity of transmitted light or a difference in intensity obtained at that time.
  • (A) is a plan view showing an inspection surface of a wafer
  • (B) is a diagram showing a transmitted light intensity image
  • (C) is a diagram showing a difference image of transmitted light intensity
  • (D) is a histogram showing transmitted light intensity.
  • (A) is a plan view showing an inspection surface of a wafer
  • (B) is a diagram showing a transmitted light intensity image
  • (C) is a diagram showing a difference image of transmitted light intensity
  • (D) is a histogram showing transmitted light intensity. .
  • (A) is a plan view showing an inspection surface of a wafer
  • (B) is a diagram showing a transmitted light intensity image
  • (C) is a diagram showing a difference image of transmitted light intensity
  • (D) is a histogram showing transmitted light intensity.
  • (A) is a plan view showing an inspection surface of a wafer
  • (B) is a diagram showing a transmitted light intensity image
  • (C) is a diagram showing a difference image of transmitted light intensity
  • (D) is a histogram showing transmitted light intensity.
  • (A) is a diagram showing an intensity image of transmitted light of a twin defect
  • (B) is a histogram showing the intensity of transmitted light.
  • FIG. 1 is a block diagram showing one embodiment of a wafer inspection apparatus according to the present invention.
  • the wafer inspection apparatus 1 of the present embodiment includes an infrared irradiator 11 that irradiates an inspection surface 2 of a wafer W to be inspected with infrared IR, and a camera 12 that captures transmitted light TL of the infrared IR transmitted through the wafer W.
  • a defect position specifying unit 13 an intensity detecting unit 14, a difference calculating unit 15, a profile generating unit 16, and a determining unit 17.
  • the defect position specifying unit 13, the intensity detecting unit 14, the difference calculating unit 15, the profile generating unit 16, and the determining unit 17 perform these calculations on computer hardware including a CPU, a ROM, a RAM, and the like. This is realized by installing a program in which the contents are written and executing the program.
  • the infrared irradiator 11 includes a light source that irradiates an infrared IR of 0.7 ⁇ m to 1 mm, and irradiates a part or the entire surface of the wafer W with the infrared IR to the back surface or the front surface of the wafer W.
  • a light source that irradiates an infrared IR of 0.7 ⁇ m to 1 mm, and irradiates a part or the entire surface of the wafer W with the infrared IR to the back surface or the front surface of the wafer W.
  • the infrared rays IR may be applied only to a portion of the inspection target where a defect is likely to occur.
  • the light (electromagnetic wave) for inspecting a defect of the wafer W which is emitted from the irradiation unit of the present invention, needs to pass through the wafer W.
  • the infrared IR is used.
  • X-rays may be used. This is because it is impossible to determine whether the defect has penetrated from the back surface of the wafer toward the front surface or has stopped halfway with the reflected light that does not pass through the wafer W.
  • the camera 12 includes a CCD camera or the like, and faces the infrared irradiating unit 11 with the wafer W interposed therebetween so that the infrared IR radiated from the infrared irradiating unit 11 receives (images) the transmitted light TL transmitted through the wafer W. It is provided in.
  • the infrared irradiator 11 irradiates a part of the wafer W with the infrared IR, it is preferable that the infrared irradiator 11 be configured and arranged to receive all the transmitted light. Further, it is preferable to receive transmitted light while moving and scanning the wafer W.
  • the infrared irradiating unit 11 irradiates the entire surface of the wafer W with the infrared IR, it is preferable that the infrared irradiating unit 11 be configured and arranged to receive all the transmitted light.
  • the transmitted light received by the camera 12 is read by the defect position specifying unit 13.
  • the defect position specifying unit 13 reads out the luminance value of the transmitted light captured by the camera 12 and creates a wafer map of the transmitted light. Further, as shown in the lower right diagram of FIG. 1, a defect is detected from the transmitted light wafer map, and a part of the inspection surface 2 of the wafer (eg, a silicon wafer or an epitaxial silicon wafer), for example, 2 mm ⁇ 2 mm, is detected around the defect. A square inspection surface 2 is extracted.
  • the intensity detecting unit 14 divides the inspection surface 2 into a plurality of predetermined area portions 21 (for example, a 5 ⁇ m ⁇ 5 ⁇ m square) as shown in the center right diagram of FIG. The intensity of the transmitted light is detected from the luminance value.
  • the numerical values of the area of the inspection surface 2 and the area of the predetermined area 21 are not limited at all, and may be set to appropriate numerical values according to the resolution of the camera 12, the size of the wafer W, and the like.
  • the difference calculation unit 15 calculates the difference between the intensities of the transmitted light of the plurality of predetermined area portions 21. For example, the minimum value of the predetermined area portion 21 in which the intensity of the transmitted light is minimum is set as a reference value. The intensity of the transmitted light having a difference from the predetermined area portion 21 is calculated. While the absolute value of the intensity of the transmitted light is detected by the intensity detection unit 14, the difference calculation unit 15 is a relative value of the intensity of the transmitted light on a certain inspection surface 2, and controls a kind of filter function. .
  • the image shown in FIG. 4B is image data indicating the intensity of transmitted light of the inspection surface 2 shown in FIG. 4A, while the image shown in FIG. 15 shows the difference image obtained by the step S15.
  • the image of FIG. 4C clearly shows the presence or absence of a portion where the intensity of the transmitted light is different from the image of FIG. 4B.
  • the difference calculation unit 15 is not essential, and may be provided as necessary.
  • the profile generation unit 16 calculates the intensity of the transmitted light of the plurality of predetermined area portions 21 detected by the intensity detection unit 14 or the difference between the intensity of the transmitted light of the plurality of predetermined area portions 21 calculated by the difference calculation unit 15, As shown in the upper right diagram of FIG. 1, a histogram profile showing the relationship between the intensity or the difference in the intensity and the frequency is generated.
  • the horizontal axis of the graph shown on the upper right of FIG. 1 indicates the class of the intensity or the difference of the intensity, and the vertical axis indicates the frequency.
  • the class of the intensity or the difference of the intensity on the horizontal axis may be set to a numerical value from which the number of peaks can be determined by the determination unit 17 described later.
  • the determination unit 17 determines, from the histogram profile (frequency profile) generated by the profile generation unit 16, the feature of the frequency profile of the intensity or the intensity difference on the inspection surface 2.
  • the determination unit 17 stores in advance the specific defect and the characteristics of the frequency profile of the intensity or the difference of the intensity with respect to the defect. For example, as described later, for a defect reaching from the back surface to the inspection surface 2, a frequency profile of an intensity having one peak or a difference in intensity is stored as a characteristic profile, and the inspection surface 2 has no defect. For a defect that does not reach the inspection surface 2 only by the back surface, the intensity profile having two peaks or the frequency profile of the difference in the intensity is stored as a characteristic profile, and for the twin defect, FIG. Are stored as characteristic profiles.
  • the determination unit 17 From the histogram profile (frequency profile) generated by the profile generator 16, it is determined how many peaks are present in the frequency profile of the intensity or the difference of the intensity on the inspection surface 2. When the number of peaks in the frequency profile is 1, the determination unit 17 determines that the defect extends from the back surface to the inspection surface 2. When the number of peaks in the frequency profile is 2, the determination unit 17 determines the defect. No. 2 has no defect and is determined to be a defect that does not reach inspection surface 2 only on the back surface.
  • FIG. 2A is a cross-sectional view of a main part showing a defect DF reaching from the back surface to the front surface of the wafer W
  • FIG. 2B is a diagram showing a frequency profile of intensity of transmitted light or intensity difference obtained at that time. is there.
  • the lower surface of the wafer W is the back surface
  • the upper surface is the front surface.
  • the present inventors use a large number of wafers (mirror-polished wafers, heat-treated wafers, and epitaxial wafers) to irradiate a defect reaching from the back surface to the front surface with infrared IR, and transmit the intensity of transmitted light or When a frequency profile of the intensity difference was generated, a profile having one peak as a whole was obtained as shown in FIG.
  • FIG. 4A is a plan view showing the inspection surface 2 of the wafer W
  • FIG. 4B is a diagram showing an intensity image of transmitted light
  • FIG. 4C is a difference image of the intensity of transmitted light
  • FIG. 4D is a histogram showing the intensity of transmitted light
  • 5A is a plan view showing another inspection surface 2 of the same wafer W
  • FIG. 5B is a diagram showing an intensity image of transmitted light
  • FIG. 5C is an intensity image of transmitted light
  • FIG. 5D is a histogram showing the intensity of transmitted light.
  • 4 (A) and 5 (A) are plan views each showing the surface of the wafer W.
  • the inspection surface 2 in FIG. 4 (A) has a slip defect which can be confirmed by visual inspection using a condensing lamp.
  • FIG. 3A is a cross-sectional view of a main part showing a defect that does not reach from the back surface to the front surface of the wafer W
  • FIG. 3B is a diagram showing the intensity of transmitted light or the difference in intensity obtained at that time. It is a figure showing a frequency profile.
  • the lower surface of the wafer W is the back surface
  • the upper surface is the front surface.
  • the present inventors use a large number of wafers (a mirror-polished wafer, a heat-treated wafer and an epitaxial wafer) to irradiate a defect that does not reach from the back surface to the front surface with infrared IR, and to transmit the intensity of the transmitted light.
  • a frequency profile of the intensity difference is generated, a profile having two peaks as a whole is obtained as shown in FIG.
  • FIG. 6A is a plan view illustrating still another inspection surface 2 of the wafer W
  • FIG. 6B is a diagram illustrating an intensity image of transmitted light
  • FIG. 6C is a difference in intensity of transmitted light
  • FIG. 6D shows an image
  • FIG. 6D is a histogram showing the intensity of transmitted light
  • 7 (A) is a plan view showing still another inspection surface 2 of the same wafer W
  • FIG. 7 (B) is a diagram showing an intensity image of transmitted light
  • FIG. FIG. 7D shows a difference image of the intensity
  • FIG. 7D is a histogram showing the intensity of the transmitted light
  • 6A and FIG. 7A are plan views each showing the surface of the wafer W. The inspection surface 2 in FIG.
  • a slip defect DF3 shown in FIG. 6B could be confirmed by visual inspection using a condensing lamp.
  • the other inspection surface 2 in FIG. 7A there was no defect that could be confirmed by visual inspection using a condensing lamp from the front surface of the wafer W, but on the back surface, as shown in FIG. 7B.
  • the slip defect DF3 was visually confirmed.
  • FIG. 6D and FIG. As shown in D the results each showed two peaks.
  • FIGS. 2, 4 and 5 when histograms of the intensity of the transmitted light TL of the infrared IR with respect to the slip defects DF1 and DF2 reaching from the back surface to the front surface of the wafer W are generated, FIGS. As shown in (D) and FIG. 5 (D), it is presumed that one peak is shown for the following reasons. That is, in the case of such slip defects DF1 and DF2, it is considered that the internal stress due to the defect is released on the back surface side of the wafer W and remains only inside the wafer W. For this reason, it is presumed that the frequency profile of the transmitted light intensity appears as one narrow and relatively sharp peak.
  • FIG. 3 FIG. 6, and FIG. 7, when the histogram of the intensity of the transmitted light TL of the infrared IR with respect to the slip defects DF3 and DF4 that does not reach from the back surface to the front surface of the wafer W is generated.
  • FIG. 6 (D) and FIG. 7 (D) it is presumed that the two peaks are shown for the following reasons. That is, in the case of such slip defects DF3 and DF4, it is considered that the internal stress due to the defect on the back surface is not released on the front surface side of the wafer W but remains on both the back surface and the inside of the wafer W. For this reason, it is presumed that the frequency profile of the transmitted light intensity appears as two broad and relatively unsharp peaks.
  • the defect is a defect that reaches from the back surface to the front surface of the wafer W, or from the back surface to the front surface. Defects that cannot be reached can be identified. Thus, for example, it is possible to easily identify whether the slip defect generated after the heat treatment has reached the front surface or has not reached the front surface from the back surface.
  • slip defects DF3 and DF4 that do not reach from the back surface to the front surface of the wafer W are removed. Since the depth is presumed to be correlated with the intensity of the transmitted light, it can be determined that the greater the intensity of the transmitted light, the deeper the defect is.
  • FIG. 8A is a diagram showing a transmitted light intensity image of a twin defect
  • FIG. 8B is a histogram showing transmitted light intensity.
  • FIG. 8 (B) in the case of twin defects, the features are clearly different from the slip defects shown in FIGS. 4 (D), 5 (D), 6 (D) and 7 (D).
  • the histogram has. Therefore, if the characteristics of the histogram are stored in advance in the inspection apparatus for each type of defect, various defects can be determined and further classified by comparing them with those.

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PCT/JP2019/030844 2018-08-09 2019-08-06 ウェーハの検査方法および検査装置 WO2020032005A1 (ja)

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Application Number Priority Date Filing Date Title
DE112019003985.7T DE112019003985T5 (de) 2018-08-09 2019-08-06 Waferinspektionsverfahren und -inspektionsvorrichtung
CN201980053272.9A CN112639451B (zh) 2018-08-09 2019-08-06 晶圆的检查方法及检查装置
KR1020207034675A KR102482538B1 (ko) 2018-08-09 2019-08-06 웨이퍼의 검사 방법 및 검사 장치

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JP2018149990A JP7063181B2 (ja) 2018-08-09 2018-08-09 ウェーハの検査方法および検査装置
JP2018-149990 2018-08-09

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