WO2020031589A1 - Dispositif laser à semi-conducteur - Google Patents

Dispositif laser à semi-conducteur Download PDF

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Publication number
WO2020031589A1
WO2020031589A1 PCT/JP2019/027122 JP2019027122W WO2020031589A1 WO 2020031589 A1 WO2020031589 A1 WO 2020031589A1 JP 2019027122 W JP2019027122 W JP 2019027122W WO 2020031589 A1 WO2020031589 A1 WO 2020031589A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor laser
laser device
substrate
conductive
conductive layer
Prior art date
Application number
PCT/JP2019/027122
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English (en)
Japanese (ja)
Inventor
浩之 田尻
晃輝 坂本
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ローム株式会社
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Publication date
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Priority to JP2020536391A priority Critical patent/JP7329519B2/ja
Publication of WO2020031589A1 publication Critical patent/WO2020031589A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present disclosure relates to a semiconductor laser device.
  • Patent Document 1 discloses an example of a conventional semiconductor laser device.
  • the semiconductor laser device disclosed in the document includes a stem, a semiconductor laser element, a submount substrate, a plurality of leads and a cap.
  • the stem is made of metal and has a plate-shaped base and a block protruding forward from the base in the emission direction.
  • the semiconductor laser device is mounted on a block via a submount substrate.
  • the plurality of leads include those fixed to the stem and those connected to the semiconductor laser element.
  • the cap covers the block, the submount substrate, and the semiconductor laser device, and has an opening through which light from the semiconductor laser device passes.
  • the semiconductor laser element is electrically connected to the lead via the wire.
  • the wire can contribute to increasing the resistance value in the conduction path between the semiconductor laser element and the lead.
  • the present disclosure has been conceived under the circumstances described above, and has as its object to provide a semiconductor laser device capable of reducing the resistance.
  • a semiconductor laser device includes a semiconductor laser element, a base made of an insulating material having a base first surface and a base second surface facing each other in a thickness direction; A submount substrate having at least one penetrating conductive part penetrating in the thickness direction, wherein the semiconductor laser element is disposed on the first surface of the base material, and the penetrating conductive part is It is electrically connected to the semiconductor laser device.
  • FIG. 1 is a perspective view of a main part showing a semiconductor laser device according to a first embodiment of the present disclosure.
  • FIG. 1 is an enlarged perspective view of a main part showing a semiconductor laser device according to a first embodiment of the present disclosure.
  • 1 is a main part front view illustrating a semiconductor laser device according to a first embodiment of the present disclosure.
  • FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3.
  • FIG. 5 is a sectional view taken along line VV in FIG. 3.
  • FIG. 1 is an enlarged cross-sectional view illustrating a main part of a semiconductor laser device according to a first embodiment of the present disclosure.
  • FIG. 6 is a cross-sectional view illustrating a first modification of the semiconductor laser device according to the first embodiment of the present disclosure.
  • FIG. 9 is a sectional view taken along line IX-IX in FIG. 8. It is a principal part front view showing the semiconductor laser device concerning a 3rd embodiment of this indication. It is a principal part front view showing the semiconductor laser device concerning a 4th embodiment of this indication.
  • FIG. 12 is a sectional view taken along the line XII-XII of FIG. 11.
  • FIG. 15 is a front view of a main part showing a first modification of the semiconductor laser device according to the fourth embodiment of the present disclosure;
  • FIG. 14 is a sectional view taken along the line XIV-XIV of FIG. It is a principal part front view showing the 2nd modification of the semiconductor laser device concerning a 4th embodiment of this indication.
  • the semiconductor laser device A1 of the present disclosure includes a stem 1, a plurality of leads 13, 14, 15, a semiconductor laser element 2, a submount substrate 3, a plurality of wires 4, and a cap 8.
  • the application of the semiconductor laser device A1 is not particularly limited, and is used, for example, as a light source device mounted on various electronic devices.
  • FIG. 1 is a perspective view of a main part showing the semiconductor laser device A1.
  • FIG. 2 is an enlarged perspective view of a main part showing the semiconductor laser device A1.
  • FIG. 3 is a front view of a main part showing the semiconductor laser device A1.
  • FIG. 4 is a sectional view taken along the line IV-IV in FIG.
  • FIG. 5 is a sectional view taken along line VV in FIG.
  • FIG. 6 is an enlarged sectional view of a main part showing the semiconductor laser device A1.
  • the z direction in the drawings is the emission direction of the semiconductor laser device 2, and corresponds to the first direction in the present disclosure.
  • the x direction and the y direction are directions that are each perpendicular to the z direction.
  • the x direction corresponds to a second direction of the present disclosure.
  • the y direction corresponds to the thickness direction of the present disclosure. Note that, in FIG. 2, the wire 4 is omitted for convenience of understanding.
  • the stem 1 serves as a base of the semiconductor laser device A1, and has a first part 11 and a second part 12.
  • the first part 11 and the second part 12 are formed integrally, but the invention is not limited to this.
  • the material of the stem 1 is not particularly limited, but is made of, for example, Fe or an Fe alloy.
  • Ni plating, Cu plating, Au plating, or the like having a thickness of about 2 to 4 ⁇ m may be applied to these Fe or Fe alloys.
  • the first portion 11 is a plate-shaped portion having a thickness direction in the z direction, and in the present embodiment, has a substantially circular shape as viewed in the z direction.
  • the diameter is about 5.6 mm and the thickness is about 0.5 mm.
  • the first portion 11 has through holes 111 and 112 formed therein.
  • the through holes 111 and 112 penetrate the first portion 11 in the z direction, and in the illustrated example, are arranged apart from each other in the x direction.
  • the shape and size of the through holes 111 and 112 are not particularly limited, but in the present embodiment, the through holes are circular through holes having a diameter of about 1.0 mm.
  • the diameter of the through holes 111 and 112 is appropriately set according to the size of the first portion 11 and the leads 13 and 14, the interval between the leads 13 and 14, and the like.
  • the second part 12 protrudes from the first part 11 on the emission side in the z direction (upward in the drawing in FIG. 1).
  • the shape of the second part 12 is not particularly limited.
  • the second part 12 has a support surface 121. In this embodiment, the support surface 121 is parallel to the z direction and faces the y direction.
  • the leads 13, 14, and 15 are used to fix the semiconductor laser device A1 to an electronic device or the like, and form a power supply path to the semiconductor laser device 2.
  • the plurality of leads 13, 14, 15 are rod-shaped members made of, for example, an Fe—Ni alloy.
  • the plurality of leads 13, 14, 15 may be plated with Au.
  • the leads 13 and 14 are individually inserted into the through holes 111 and 112, respectively. As shown in FIG. 1, the upper portion of the lead 13 in the z direction projects upward from the through hole 111 in the z direction. In addition, most of the leads 13 located on the lower side in the z direction project from the first portion 11 downward in the z direction.
  • the lead 13 has a first portion 131.
  • the first portion 131 is a plate-shaped portion located above the first portion 11 in the z direction and having the thickness direction in the y direction.
  • the space between the leads 13 and 14 and the through holes 111 and 112 is filled with the insulating filler 17.
  • the insulating filler 17 functions to fix the leads 13 and 14 to the first portion 11 of the stem 1 and to insulate the leads 13 and 14 from the stem 1.
  • the material of the insulating filler 17 is not particularly limited, but in the present embodiment, the insulating filler 17 is made of glass.
  • the upper portion of the lead 14 in the z direction slightly protrudes upward from the through hole 112 in the z direction, it is shorter than the length of the lead 13.
  • most of the leads 13 located on the lower side in the z direction project from the first portion 11 downward in the z direction.
  • the lead 15 is joined to the first portion 11 below the first portion 11 in the z direction, and is electrically connected to the first portion 11. In the present embodiment, the lead 15 overlaps with the second portion 12 of the stem 1 when viewed from the z direction.
  • the semiconductor laser element 2 is a light emitting element in the semiconductor laser device A1.
  • the semiconductor laser device 2 of the present embodiment has a semiconductor layer 21, a first electrode 23, and a second electrode 24.
  • the semiconductor layer 21 has a structure in which a plurality of semiconductor layers are stacked, and includes, for example, an active layer.
  • the semiconductor constituting the semiconductor layer 21 is not particularly limited, and for example, a GaAs-based semiconductor is used.
  • the shape of the semiconductor layer 21 is not particularly limited. In the present embodiment, as shown in FIGS. 2 to 5, the element first surface 211, the element second surface 212, the element third surface 213, and the element fourth surface 214 , An element fifth surface 215 and an element sixth surface 216.
  • the element first surface 211 and the element second surface 212 face opposite sides in the y direction.
  • the element third surface 213 and the element fourth surface 214 face opposite sides in the z direction, and in the illustrated example, are connected to the element first surface 211 and the element second surface 212, respectively.
  • the element fifth surface 215 and the element sixth surface 216 face opposite sides in the x direction, and in the illustrated example, the element first surface 211, the element second surface 212, the element third surface 213, and It is connected to the fourth element surface 214.
  • the size of the semiconductor layer 21 is not particularly limited.
  • the dimension in the x direction is about 200 ⁇ m to 600 ⁇ m
  • the dimension in the y direction is about 50 ⁇ m to 200 ⁇ m
  • the dimension in the z direction is about 500 ⁇ m to 1000 ⁇ m.
  • the laser light L is emitted from the element third surface 213 in the z direction.
  • the device fourth surface 214 may emit weak light as compared with the laser light L.
  • the first electrode 23 is formed on the element first surface 211 of the semiconductor layer 21.
  • the material of the first electrode 23 is not particularly limited, and is made of, for example, Au.
  • the second electrode 24 is formed on the element second surface 212 of the semiconductor layer 21.
  • the material of the second electrode 24 is not particularly limited, and is made of, for example, Au.
  • the polarities of the first electrode 23 and the second electrode 24 are not particularly limited.
  • the first electrode 23 is an anode electrode
  • the second electrode 24 is a cathode electrode.
  • the submount substrate 3 is interposed between the stem 1 and the semiconductor laser device 2.
  • the submount substrate 3 of the present embodiment has a base material 31, a first conductive layer 33, a second conductive layer 34, and through conductive portions 37 and 38.
  • the base material 31 is made of an insulating material, for example, ceramics such as AlN.
  • the shape of the base material 31 is not particularly limited, and in the illustrated example, the base material 31 includes a base material first surface 311, a base material second surface 312, a base material third surface 313, and a base material fourth surface 314. , A fifth base surface 315 and a sixth base surface 316.
  • the first base material surface 311 and the second base material surface 312 face opposite sides in the y direction.
  • the third base material surface 313 and the fourth base material surface 314 face opposite sides in the z direction, and in the illustrated example, are connected to the first base material surface 311 and the second base material surface 312, respectively.
  • the fifth base material surface 315 and the sixth base material surface 316 face opposite sides in the x direction, and in the illustrated example, the first base material surface 311, the second base material surface 312, and the It is connected to the third surface 313 and the base material fourth surface 314.
  • the size of the substrate 31 is not particularly limited.
  • the dimension in the x direction is about 500 ⁇ m to 1000 ⁇ m
  • the dimension in the y direction is about 100 ⁇ m to 300 ⁇ m
  • the dimension in the z direction is about 500 ⁇ m to 1500 ⁇ m.
  • the base material 31 has a through hole 317 and a through hole 318.
  • the through hole 317 and the through hole 318 penetrate the base member 31 in the y direction, and reach the base member first surface 311 and the base member second surface 312.
  • the through holes 317 and 318 are arranged apart from each other in the z direction.
  • the shape of the through hole 317 and the through hole 318 is not particularly limited, and in the illustrated example, the shape is circular as viewed from the y direction.
  • the size of the through hole 317 and the through hole 318 is not particularly limited, and for example, the diameter is about 0.1 mm to 0.3 mm, and preferably 0.15 mm to 0.25 mm.
  • the first conductive layer 33 is formed on the first base material surface 311 of the base material 31.
  • the material of the first conductive layer 33 is not particularly limited, and is made of, for example, Au. Further, the first conductive layer 33 may further include an underlayer made of Ti / Pt.
  • the second conductive layer 34 is formed on the base material second surface 312 of the base material 31.
  • the material of the second conductive layer 34 is not particularly limited, and is made of, for example, Au. Further, the second conductive layer 34 may further include a base layer made of Ti / Pt.
  • the second conductive layer 34 is conductively bonded to the support surface 121 of the second part 12 of the stem 1 via a conductive bonding part (not shown).
  • the semiconductor laser element 2 is joined to the first conductive layer 33.
  • the second electrode 24 of the semiconductor laser device 2 and the first conductive layer 33 are joined by a conductive joint 51.
  • the material of the conductive bonding portion 51 is not particularly limited, and is made of, for example, AuSn.
  • the conductive bonding portion 51 extends toward the base material fourth surface 314 in the z direction with respect to the semiconductor laser device 2.
  • the penetrating conductive portions 37 and 38 penetrate the base material 31 in the y direction, and are configured as conductive members by including a conductive material.
  • the through conductive portion 37 is filled in the through hole 317
  • the through conductive portion 38 is filled in the through hole 318.
  • the penetrating conductive portions 37 and 38 are in contact with the first conductive layer 33 and the second conductive layer 34, respectively, and make the first conductive layer 33 and the second conductive layer 34 conductive.
  • FIG. 6 is an enlarged sectional view of a main part showing a part including the through conductive part 37.
  • the penetrating conductive portion 37 is a portion mainly made of a conductive material, and is made of, for example, a metal such as W (tungsten) or Cu. The same applies to the material of the through conductive portion 38.
  • the penetrating conductive portion 37 overlaps the semiconductor laser element 2 when viewed from the y direction in the illustrated example.
  • the penetrating conductive portion 38 is separated from the semiconductor laser element 2 when viewed from the y direction, and is disposed on the base material fourth surface 314 side in the z direction with respect to the semiconductor laser element 2.
  • the center of the through conductive portion 37 in the z direction is located closer to the third substrate surface 313 in the z direction than the center of the semiconductor laser element 2 (semiconductor layer 21) in the z direction.
  • a first distance d1 which is a distance between the element third surface 213 and the substrate third surface 313 in the z direction, is a distance between the element fourth surface 214 and the substrate fourth surface 314 in the z direction. It is smaller than the second distance d2 that is the distance.
  • the element third surface 213 is located closer to the base material fourth surface 314 in the z direction than the base material third surface 313 when viewed from the y direction.
  • the portion where the laser light L is emitted from the third element surface 213 is located closer to the first element surface 211 than the center of the semiconductor layer 21 in the y direction.
  • the wire 4 is connected to the semiconductor laser element 2 and the lead 13 as shown in FIGS. 1 and 3, and makes these conductive to each other.
  • the wire 4 is connected to the first electrode 23 of the semiconductor laser device 2 and the first portion 131 of the lead 13.
  • the number of wires 4 is not particularly limited, and in the illustrated example, the number of wires 4 is four.
  • the wire 4 has a bonding part 41.
  • the bonding part 41 is a part bonded to the first electrode 23.
  • the wire diameter of the wire 4 is, for example, about 25 ⁇ m to 45 ⁇ m, and the diameter of the bonding portion 41 is, for example, about 60 ⁇ m to 140 ⁇ m.
  • the bonding portion 41 of one wire 4 and the penetrating conductive portion 37 overlap when viewed from the y direction.
  • the bonding portions 41 of the four wires 4 are arranged in a staggered manner.
  • the two bonding portions 41 and the other two bonding portions 41 are spaced apart on both sides of the center of the through conductive portion 37 in the x direction.
  • the cap 8 covers the semiconductor laser element 2, the submount substrate 3, and the second part 12 of the stem 1, and is fixed to the first part 11 of the stem 1.
  • the material of the cap portion 8 is not particularly limited, and is made of, for example, metal.
  • the cap section 8 has an opening 81.
  • the opening 81 is for passing the laser light L from the semiconductor laser element 2.
  • the configuration of the semiconductor laser device A1 is not limited to the configuration including the cap unit 8, and may be a configuration not including the cap unit 8.
  • the semiconductor laser device 2 is electrically connected to the penetrating conductive portions 37 and 38 penetrating the base 31. Therefore, when the second conductive layer 34 of the submount substrate 3 is conductively joined to the second part 12 of the stem 1, the semiconductor laser device 2 is electrically connected to the second part 12, the first part 11 and the lead 15 of the stem 1. I do. Therefore, there is no need to provide a wire for conducting the semiconductor laser element 2 with the lead 15. This makes it possible to reduce the resistance of the semiconductor laser device A1.
  • the penetrating conductive portion 37 overlaps with the semiconductor layer 21 (second electrode 24) of the semiconductor laser device 2 when viewed from the y direction. Therefore, it is possible to shorten the current path flowing from the second electrode 24 to the through conductive portion 37. This is preferable for reducing the resistance of the semiconductor laser device A1.
  • the penetrating conductive portion 37 overlaps the bonding portion 41 of the wire 4. For this reason, the current path flowing through the semiconductor laser element 2 can be shortened, which is preferable for reducing the resistance of the semiconductor laser device A1.
  • the center of the through conductive portion 37 in the z direction is located closer to the third substrate surface 313 in the z direction than the center of the semiconductor laser element 2 (semiconductor layer 21) in the z direction.
  • the through conductive portion 37 is provided at a position closer to the third base surface 313 from which the laser light L is emitted than the fourth base surface 314.
  • the penetrating conductive portion 37 is made of a material such as Cu having a higher thermal conductivity than the base material 31, heat at the time of light emission of the semiconductor laser element 2 can be more efficiently radiated.
  • a plurality of wires 4 are connected to the semiconductor laser device 2. Thereby, the current flowing through the semiconductor laser element 2 can be increased, and the current can be made uniform, so that the output of the semiconductor laser device A1 can be increased.
  • the plurality of bonding portions 41 are arranged in a staggered manner. Thus, the area of the region where the plurality of bonding portions 41 are provided can be reduced, and the size of the semiconductor laser element 2 and the semiconductor laser device A1 can be reduced.
  • a first distance d1 which is a distance between the element third surface 213 and the substrate third surface 313 in the z direction, is a distance between the element fourth surface 214 and the substrate fourth surface 314 in the z direction. It is smaller than the second distance d2 that is the distance. Accordingly, the position of the element third surface 213 from which the laser light L is emitted can be more accurately positioned with respect to, for example, the upper end of the second portion 12 of the stem 1 in the z direction.
  • the element third surface 213 is located closer to the substrate fourth surface 314 in the z direction than the substrate third surface 313 when viewed from the y direction. However, the position where the laser light L is emitted from the third element surface 213 is located closer to the first element surface 211 than the center of the semiconductor layer 21 in the y direction. For this reason, it is possible to prevent the laser beam L from being unintentionally blocked by the base material first surface 311 of the base material 31 or the like.
  • FIGS. 7 to 15 show modified examples and other embodiments of the present disclosure.
  • the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.
  • FIG. 7 is a sectional view showing a first modification of the semiconductor laser device A1.
  • the semiconductor laser device A11 of this example differs from the above-described example in the positional relationship between the semiconductor laser element 2 and the submount substrate 3 in the z direction.
  • the element third surface 213 is located on the opposite side of the substrate fourth surface 314 in the z direction from the substrate third surface 313 when viewed from the y direction.
  • the portion where the laser light L is emitted from the third element surface 213 is located closer to the second element surface 212 than the center of the semiconductor layer 21 in the y direction.
  • the first distance d1 which is the distance between the element third surface 213 and the base material third surface 313 in the z direction, is the distance between the element fourth surface 214 and the base material fourth surface 314 in the z direction. It is smaller than the second distance d2 that is the distance.
  • the resistance of the semiconductor laser device A11 can be reduced. Further, the position where the laser light L is emitted from the element third surface 213 is located closer to the element second surface 212 than the center of the semiconductor layer 21 in the y direction, but the element third surface 213 is positioned from the y direction. When viewed, the third substrate 313 is located on the opposite side to the fourth substrate surface 314 in the z direction than the third substrate surface 313. Accordingly, it is possible to suppress the laser light L from being unintentionally blocked by the base material first surface 311 of the base material 31 and the like. Further, as understood from the present example, the position where the laser light L is emitted on the element third surface 213 of the semiconductor laser element 2 is not limited at all.
  • ⁇ Second embodiment> 8 and 9 show a semiconductor laser device according to the second embodiment of the present disclosure.
  • the semiconductor laser device A2 of the present embodiment is different from the above-described embodiment in the positional relationship and the dimensional relationship between the semiconductor laser device 2 and the submount substrate 3.
  • FIG. 8 is a front view of a main part showing the semiconductor laser device A2.
  • FIG. 9 is a sectional view taken along line IX-IX in FIG.
  • the through conductive portions 37 and 38 and the semiconductor laser element 2 overlap.
  • the dimension in the z direction of the semiconductor laser element 2 is, for example, about 800 ⁇ m to 1000 ⁇ m.
  • the penetrating conductive portion 37 and the penetrating conductive portion 38 are arranged on opposite sides of the center of the semiconductor laser device 2 (semiconductor layer 21) in the z direction.
  • the penetrating conductive portion 37 overlaps the bonding portion 41 of the wire 4 when viewed from the y direction.
  • the penetrating conductive portion 38 overlaps with the bonding portion 41 of the wire 4 when viewed from the y direction. Note that at least one of the penetrating conductive portion 37 and the penetrating conductive portion 38 may have a configuration that does not overlap with the bonding portion 41 when viewed from the y direction.
  • the first distance d1 which is the distance between the element third surface 213 and the base material third surface 313 in the z direction, is the distance between the element fourth surface 214 and the base material fourth surface 314 in the z direction. Is smaller than the second distance d2.
  • the resistance of the semiconductor laser device A2 can be reduced. Further, both the penetrating conductive portion 37 and the penetrating conductive portion 38 overlap the semiconductor laser element 2 (semiconductor layer 21) when viewed from the y direction. Thus, even with the semiconductor laser element 2 having a larger dimension in the z-direction than the semiconductor laser element 2 of the semiconductor laser device A1, the current can flow more uniformly.
  • the semiconductor laser elements can be mounted on the same submount substrate 3.
  • FIG. 10 illustrates a semiconductor laser device according to the third embodiment of the present disclosure.
  • the semiconductor laser device A3 of the present embodiment is different from the above-described embodiment mainly in the configuration of the submount substrate 3.
  • the submount substrate 3 of the present embodiment has the penetrating conductive portion 37 and does not have the penetrating conductive portion 38 of the above-described embodiment.
  • the penetrating conductive portion 37 overlaps the semiconductor laser element 2 (semiconductor layer 21) when viewed from the y direction.
  • the center of the through conductive portion 37 in the z direction is located closer to the base material third surface 313 in the z direction than the center of the semiconductor laser device 2 (semiconductor layer 21) in the z direction when viewed from the y direction. ing.
  • the through conductive portion 37 overlaps the bonding portion 41 of the wire 4 when viewed from the y direction.
  • the resistance of the semiconductor laser device A3 can be reduced.
  • the submount substrate 3 since the submount substrate 3 has only the penetrating conductive portion 37 that overlaps with the semiconductor laser element 2 when viewed from the y direction, the size of the submount substrate 3 can be reduced, and the entire semiconductor laser device A3 can be reduced. This is advantageous for miniaturization.
  • ⁇ Fourth embodiment> 11 and 12 show a semiconductor laser device according to a fourth embodiment of the present disclosure.
  • the semiconductor laser device A4 of the present embodiment is different from the above-described embodiment mainly in the configuration of the semiconductor laser element 2 and the submount substrate 3.
  • FIG. 11 is a front view of a main part showing the semiconductor laser device A4.
  • FIG. 12 is a sectional view taken along the line XII-XII in FIG.
  • the semiconductor laser device 2 of the present embodiment has the semiconductor layer 21, the second electrode 24, the third electrode 25, and the conductive portion 26.
  • the semiconductor layer 21 of the present embodiment includes an element first surface 211, an element second surface 212, an element third surface 213, an element fourth surface 214, an element fifth surface 215, an element sixth surface 216, and an element seventh surface 217. Having.
  • the element first surface 211 and the element second surface 212 face opposite sides in the y direction.
  • the element third surface 213 and the element fourth surface 214 face opposite sides in the z direction, and in the illustrated example, are connected to the element first surface 211 and the element second surface 212, respectively.
  • the element fifth surface 215 and the element sixth surface 216 face opposite sides in the x direction.
  • the element seventh surface 217 faces the same side as the element second surface 212 in the y direction.
  • the element seventh surface 217 is located closer to the element first surface 211 than the element second surface 212 in the y direction.
  • the active layer of the semiconductor layer 21 is provided at a position overlapping the element second surface 212 when viewed from the y direction.
  • the second electrode 24 is formed on the element second surface 212 of the semiconductor layer 21.
  • the material of the second electrode 24 is not particularly limited, and is made of, for example, Au.
  • the second electrode 24 is, for example, an anode electrode.
  • the conductive portion 26 is provided on the element seventh surface 217 of the semiconductor layer 21.
  • the material of the conductive portion 26 is not particularly limited, and is made of, for example, a metal.
  • the third electrode 25 is formed on the conductive part 26.
  • the material of the third electrode 25 is not particularly limited, and is made of, for example, Au.
  • the third electrode 25 is provided at substantially the same position as the second electrode 24 in the y direction.
  • Third electrode 25 is, for example, a cathode electrode.
  • the submount substrate 3 has a base material 31, a first conductive layer 33, a second conductive layer 34, a third conductive layer 35, and a through conductive portion 37.
  • the first conductive layer 33 is formed on the first base material surface 311 of the base material 31.
  • the material of the first conductive layer 33 is not particularly limited, and is made of, for example, Au. Further, the first conductive layer 33 may further include an underlayer made of Ti / Pt.
  • the second conductive layer 34 is formed on the base material second surface 312 of the base material 31.
  • the material of the second conductive layer 34 is not particularly limited, and is made of, for example, Au. Further, the second conductive layer 34 may further include a base layer made of Ti / Pt.
  • the third conductive layer 35 is formed on the first base material surface 311 of the base material 31.
  • the material of the third conductive layer 35 is not particularly limited, and is made of, for example, Au. Further, the third conductive layer 35 may further include a base layer made of Ti / Pt.
  • the third conductive layer 35 is separated from the first conductive layer 33. In the illustrated example, 35 is disposed closer to the fifth substrate surface 315 than the first conductive layer 33 in the x direction.
  • the penetrating conductive portion 37 penetrates through the base material 31 and makes the first conductive layer 33 and the second conductive layer 34 conductive.
  • the second electrode 24 of the semiconductor laser element 2 is conductively connected to the third conductive layer 35 of the submount substrate 3 via the conductive bonding part 51A.
  • the third electrode 25 of the semiconductor laser device 2 is joined to the first conductive layer 33 of the submount substrate 3 via a conductive joint 51B.
  • the material of the conductive bonding portion 51A and the conductive bonding portion 51B is not particularly limited, and is made of, for example, the same material as the conductive bonding portion 51 described above.
  • the third conductive layer 35 extends from the semiconductor laser element 2 toward the base material fifth surface 315 in the x direction when viewed from the y direction.
  • the wire 4 is connected to the third conductive layer 35.
  • the wire 4 is connected to the first portion 131 of the lead 13.
  • the number of wires 4 is not particularly limited, and is four in the illustrated example.
  • the bonding portions 41 of the four wires 4 are arranged, for example, in a staggered manner. The bonding portion 41 of the wire 4 overlaps the semiconductor layer 21 of the semiconductor laser device 2 when viewed from the x direction.
  • the resistance of the semiconductor laser device A4 can be reduced.
  • the semiconductor laser device 2 may be a so-called flip-chip mounting type device.
  • the third conductive layer 35 extends from the semiconductor laser element 2 to the base material fifth surface 315 side in the x direction, and the bonding portions 41 of the plurality of wires 4 and the semiconductor laser element 2 and the base material It is provided between the five surfaces 315. Thereby, it is possible to suppress the plurality of wires 4 from unduly blocking the laser beam L from the semiconductor laser element 2. Further, according to the present embodiment, it is possible to realize a configuration such as detecting the light emitting state of the semiconductor laser element 2 by monitoring the weak light emitted from the element fourth surface 214.
  • FIGS. 13 and 14 show a first modification of the semiconductor laser device A4.
  • the semiconductor laser device A41 of this modification differs from the above-described example in the arrangement of the semiconductor laser elements 2.
  • FIG. 13 is a main part front view showing the semiconductor laser device A41.
  • FIG. 14 is a sectional view taken along the line XIV-XIV in FIG.
  • the second electrode 24 of the semiconductor laser element 2 is conductively joined to the first conductive layer 33 of the submount substrate 3 via the conductive joint 51B. Further, the third electrode 25 of the semiconductor laser device 2 is conductively connected to the third conductive layer 35 of the submount substrate 3 via the conductive bonding portion 51A.
  • the laser light L when viewed from the y direction, the laser light L is located on the base material sixth surface 316 side in the x direction of the semiconductor layer 21 in the x direction with respect to the center of the submount substrate 3 in the x direction. Is emitted from the place where
  • the resistance of the semiconductor laser device A41 can be reduced.
  • the direction of the semiconductor laser element 2 mounted on the flip chip in the x direction is not limited at all.
  • FIG. 15 is a main part front view showing a second modification of the semiconductor laser device A4.
  • the semiconductor laser device A42 of this modification is different from the above-described example mainly in the arrangement of the wires 4.
  • the third conductive layer 35 of the submount substrate 3 of the present embodiment has a first part 351 and a second part 352.
  • the first portion 351 is located closer to the base material fifth surface 315 in the x direction than the first conductive layer 33 when viewed from the z direction, and overlaps the first conductive layer 33 when viewed from the x direction.
  • the second portion 352 is located closer to the base material fourth surface 314 in the z direction than the first conductive layer 33 when viewed in the x direction, and overlaps the first conductive layer 33 when viewed in the z direction.
  • the bonding portion 41 of one wire 4 is bonded to the first portion 351 of the third conductive layer 35.
  • the bonding portion 41 of the other wire 4 is bonded to the second portion 352 of the third conductive layer 35.
  • the two bonding portions 41 overlap the semiconductor laser element 2 (semiconductor layer 21) when viewed from the z direction.
  • the resistance of the semiconductor laser device A42 can be reduced.
  • the dimension of the submount substrate 3 in the x direction can be reduced.
  • the semiconductor laser device according to the present disclosure is not limited to the embodiments described above.
  • the specific configuration of each part of the semiconductor laser device according to the present disclosure can be variously changed in design.
  • [Appendix 1] A semiconductor laser element; A substrate made of an insulating material having a substrate first surface and a substrate second surface facing each other in the thickness direction, and one or more penetrating conductive portions penetrating the substrate in the thickness direction. And a submount substrate having The semiconductor laser element is disposed on the first surface of the base material, The semiconductor laser device, wherein the through conductive portion is electrically connected to the semiconductor laser element.
  • [Appendix 2] 2. The semiconductor laser device according to claim 1, wherein the submount substrate has a first conductive layer disposed on the first surface of the base material.
  • [Appendix 3] 3.
  • the semiconductor laser device according to claim 2 wherein the submount substrate has a second conductive layer disposed on the second surface of the base material.
  • the semiconductor laser device according to claim 3, wherein the first conductive layer and the second conductive layer are conductive through the through conductive portion.
  • Appendix 5 5.
  • the semiconductor laser device has an element first surface facing the same side as the substrate first surface in the thickness direction, an element second surface facing the same side as the substrate second surface in the thickness direction, and the thickness.
  • a semiconductor layer having a third element surface facing a first direction perpendicular to the vertical direction and from which laser light is emitted, and a fourth element surface facing the opposite side to the third element surface in the first direction.
  • the substrate has a substrate third surface facing the same side as the element third surface in the first direction, and a substrate fourth surface facing the same side as the element fourth surface in the first direction.
  • [Appendix 7] 7. The semiconductor laser according to claim 6, wherein the through conductive portion overlapping the semiconductor laser element as viewed from the thickness direction is disposed closer to the element third surface than a center of the semiconductor layer in the first direction. apparatus.
  • a first distance which is a distance between the element third surface and the substrate third surface in the first direction, is a distance between the element fourth surface and the substrate fourth surface in the first direction. 8.
  • the semiconductor laser device wherein the third element surface is located on a side opposite to the fourth substrate surface in the first direction with respect to the third substrate surface when viewed from the thickness direction.
  • the semiconductor laser device according to claim 8, wherein the third element surface is located closer to the fourth substrate surface in the first direction than the third substrate surface when viewed from the thickness direction.
  • the semiconductor laser device has a first electrode disposed on the first surface of the device and a second electrode disposed on a second surface of the device. 11.
  • the semiconductor laser device according to any one of supplementary notes 6 to 10, wherein the second electrode and the first conductive layer are joined via a conductive joint.
  • the wire has a bonding portion bonded to the first electrode, 13.
  • the semiconductor laser device has a second electrode and a third electrode facing the same side as the device second surface in the thickness direction and separated from each other when viewed from the thickness direction,
  • the submount substrate includes a third conductive layer disposed on the first surface of the base material and separated from the first conductive layer when viewed from the thickness direction, Either the second electrode or the third electrode and the first conductive layer are joined via a conductive joint,
  • the semiconductor laser device according to any one of supplementary notes 6 to 10, wherein one of the second electrode and the third electrode and the third conductive layer are joined via a conductive joint.
  • [Appendix 15] 15. The semiconductor laser device according to claim 14, further comprising a wire connected to the third conductive layer.
  • the wire has a bonding portion bonded to the third conductive layer, 16.
  • the wire has a bonding portion bonded to the third conductive layer, The semiconductor laser device according to attachment 15, wherein the bonding portion overlaps the semiconductor laser element when viewed from the first direction.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne un dispositif laser à semi-conducteur A1 qui est pourvu : d'un élément laser à semi-conducteur 2 ; et d'un substrat de sous-montage 3 qui comprend un matériau de base 31 fait d'un matériau isolant et ayant une première surface de matériau de base 311 et une seconde surface de matériau de base 312 faisant face à des côtés opposés l'un de l'autre dans une direction d'épaisseur, et une ou plusieurs parties de conducteur traversant 37, 38 qui pénètrent à travers le matériau de base 31 dans la direction de l'épaisseur. L'élément laser à semi-conducteur 2 est disposé sur la première surface de matériau de base 311. Les parties de conducteur traversant 37, 38 sont en conduction électrique avec l'élément laser à semi-conducteur 2. Avec cette configuration, il est possible d'obtenir une diminution de la résistance du dispositif laser à semi-conducteur A1.
PCT/JP2019/027122 2018-08-09 2019-07-09 Dispositif laser à semi-conducteur WO2020031589A1 (fr)

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Cited By (1)

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WO2021261253A1 (fr) * 2020-06-22 2021-12-30 ヌヴォトンテクノロジージャパン株式会社 Dispositif laser à semi-conducteur et procédé de fabrication de dispositif laser à semi-conducteur

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JPH10208270A (ja) * 1997-01-29 1998-08-07 Sharp Corp 光ピックアップ用半導体レーザ装置及びその製造方法
JP2007059741A (ja) * 2005-08-26 2007-03-08 Mitsubishi Electric Corp 光半導体素子モジュール及びその製造方法
JP2017204604A (ja) * 2016-05-13 2017-11-16 ローム株式会社 半導体レーザ装置および半導体レーザ装置の実装構造

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US20060214909A1 (en) * 2005-03-23 2006-09-28 Poh Ju C Vertical cavity surface-emitting laser in non-hermetic transistor outline package

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Publication number Priority date Publication date Assignee Title
JPH10208270A (ja) * 1997-01-29 1998-08-07 Sharp Corp 光ピックアップ用半導体レーザ装置及びその製造方法
JP2007059741A (ja) * 2005-08-26 2007-03-08 Mitsubishi Electric Corp 光半導体素子モジュール及びその製造方法
JP2017204604A (ja) * 2016-05-13 2017-11-16 ローム株式会社 半導体レーザ装置および半導体レーザ装置の実装構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021261253A1 (fr) * 2020-06-22 2021-12-30 ヌヴォトンテクノロジージャパン株式会社 Dispositif laser à semi-conducteur et procédé de fabrication de dispositif laser à semi-conducteur

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