WO2020022590A1 - Capteur de gaz utilisant une del uv - Google Patents

Capteur de gaz utilisant une del uv Download PDF

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Publication number
WO2020022590A1
WO2020022590A1 PCT/KR2018/016338 KR2018016338W WO2020022590A1 WO 2020022590 A1 WO2020022590 A1 WO 2020022590A1 KR 2018016338 W KR2018016338 W KR 2018016338W WO 2020022590 A1 WO2020022590 A1 WO 2020022590A1
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WIPO (PCT)
Prior art keywords
substrate
led
gas
sensing
sensing material
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PCT/KR2018/016338
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English (en)
Korean (ko)
Inventor
안범모
박승호
송태환
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(주)포인트엔지니어링
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Publication of WO2020022590A1 publication Critical patent/WO2020022590A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00

Definitions

  • the present invention relates to a gas sensor using a UV LED for detecting a specific gas by activating the sensing material by irradiating the UV to the sensing material.
  • Gas sensor refers to a sensor that measures the concentration of the gas by using the electrical characteristics that change when the gas is adsorbed on the sensing material.
  • the gas sensor is manufactured in the form of a package installed in the PC to receive electricity to measure the concentration of the gas.
  • the above-described gas sensors are widely used for the comfort of residential spaces and the coping with harmful industrial environments, and the development of miniaturization and high precision of gas sensors has recently been made.
  • Patents for such gas sensors are known from Korean Patent Registration No. 10-1853296 (hereinafter referred to as 'Patent Document 1').
  • the sensing chip provided in the micro-sensor package of Patent Document 1 includes a substrate, a sensor electrode formed on the substrate and electrically connected to a lower portion of the second electrode layer, and formed on the substrate and electrically connected to a lower portion of the second electrode layer. And a sensing material covering the heater electrode, the sensor wiring of the sensor electrode, and the heating wiring of the heater electrode.
  • the sensing material provided in the sensing chip measures the concentration of the gas using a change in electrical characteristics when the gas is adsorbed. For this purpose, heat is generated in the heating wiring of the heater electrode, thereby heating the sensing material. In other words, for the adsorption phenomenon of the sensing material, the heating wiring is to heat the sensing electrode to 200 °C or more.
  • the sensing chip of Patent Literature 1 cannot perform gas sensing at an ordinary temperature (20 ⁇ 5 ° C.), and thus, convection and gas of the measured gas due to high temperature. There is a problem that an error of sensing occurs.
  • Patent Document 1 Korean Registered Patent No. 10-1853296
  • the present invention has been made to solve the above-described problem, and an object of the present invention is to provide a gas sensor using a UV LED that can measure the concentration of the gas even at room temperature.
  • a gas sensor using a UV LED including: a substrate including first and second metal substrates and a first vertical insulating portion provided between the first and second metal substrates; UV LED mounted in the cavity of the substrate; And a cover substrate installed on the cavity to cover the cavity.
  • a sensing material provided on the bottom surface of the cover substrate to be activated by UV irradiated from the UV LED to react with a specific gas; And first and second sensing electrodes provided on the bottom surface of the cover substrate so as to be electrically connected to the sensing material, respectively.
  • the cover substrate may be made of aluminum or an aluminum alloy, and may be provided between the first and second sensing electrodes and the lower surface of the cover substrate to insulate the first and second sensing electrodes from the cover substrate. It further comprises a; 1, 2 insulating layer.
  • the surface of the lower surface of the cover substrate corresponding to the cavity is characterized in that the surface reflection treatment.
  • the cover substrate is provided with a gas inlet hole and a gas outlet hole penetrating the upper and lower surfaces of the cover substrate, 'distance from the center line of the gas inlet hole to the center line of the UV LED> the center line of the gas outlet hole
  • the distance to the center line of the UV LED ' is characterized by satisfying the relationship.
  • the cover substrate is characterized in that made of an anodized film material having a pore.
  • the substrate may further include a second vertical insulating portion provided between the third metal substrate and the first metal substrate; And a third vertical insulating part provided between the fourth metal substrate and the second metal substrate, wherein one side of the UV LED is electrically connected to the first metal substrate, and the other side of the UV LED is It is electrically connected to a second metal substrate, wherein the first sensing electrode of the sensing unit is electrically connected to the third metal substrate, the second sensing electrode of the sensing unit is electrically connected to the fourth metal substrate. do.
  • the method may further include a sensing material bonding part provided between the sensing material and the bottom surface of the cover substrate, wherein the sensing material bonding part is formed of an anodized oxide material having a plurality of pores.
  • UV LEDs are used to measure the concentration of specific gases by activating the sensing material by irradiating UV light. Therefore, unlike the conventional gas sensor, it is possible to measure the concentration of the gas at room temperature, and through this, it is possible to solve the conventional problem that an error occurs in the measurement of the concentration of the specific gas due to the convection of the gas to be measured by the high temperature.
  • the substrate is electrically divided into an electrically applied substrate and a resistance measurement substrate, when a pulse voltage is applied to the UV LED to irradiate the pulsed UV, it is possible to easily detect a change in electrical characteristics of the sensing material.
  • the cover substrate covers the upper part of the cavity to protect the UV LED and provides a place where the sensing material is provided. Since the sensing material is provided on the lower surface of the cover substrate, UV is directly applied to the lower surface of the sensing material. It can be irradiated, the irradiation distance of the UV irradiated from the UV LED is short. Therefore, the irradiation efficiency of the UV is increased, thereby increasing the energy efficiency and gas detection efficiency of the gas sensor using the UV LED.
  • the UV LED is located close to the lower area of the gas outlet hole, it is easy to inflow into the cavity of the gas to be measured and to flow out of the gas sensor using the UV LED from the cavity of the gas to be measured by using the heat convection phenomenon. Can be done. Therefore, there is an effect that can achieve a more precise detection of the gas to be measured.
  • the cover substrate is made of an anodized oxide material having pores, the pores serve as a kind of anchor, thereby facilitating bonding between the upper surface of the sensing material and the lower surface of the cover substrate.
  • FIG. 1 is a cross-sectional view of a gas sensor using a UV LED according to a first embodiment of the present invention.
  • FIG. 2 is a plan view of the bottom surface of the cover substrate of FIG. 1.
  • FIG. 2 is a plan view of the bottom surface of the cover substrate of FIG. 1.
  • FIG. 3 is a plan view of FIG.
  • FIG. 4 is a cross-sectional view of a gas sensor using a UV LED according to a second embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a gas sensor using a UV LED according to a third embodiment of the present invention.
  • portion When a portion is referred to as being "on top” of another portion, it may be directly on top of another portion or may be accompanied by another portion in between. In contrast, when a part is mentioned as “directly above” another part, no other part is intervened in between.
  • FIG. 1 is a cross-sectional view of a gas sensor using a UV LED according to a first embodiment of the present invention
  • Figure 2 is a plan view of the bottom surface of the cover substrate of Figure 1
  • Figure 3 is a plan view of FIG.
  • the gas perforation hole 301 is blocked by the first and second insulating layers 320 and 330 and the first and second sensing electrodes 340 and 350.
  • the gas perforation hole 301 is not blocked by the first and second insulating layers 320 and 330 and the first and second sensing electrodes 340 and 350. Therefore, the external measurement target gas may be easily introduced into the cavity 101 through the gas perforation hole 301, or the measurement target gas in the cavity 101 may easily flow out to the outside.
  • Gas sensor 10 using the UV LED 200 according to the first embodiment of the present invention as shown in Figures 1 to 3, the first to fourth metal substrate (110a ⁇ 110d), A first vertical insulation portion 130a provided between the first and second metal substrates 110a and 110b, a second vertical insulation portion provided between the third metal substrate 110c and the first metal substrate 110a; 130b), a third vertical insulation portion 130c provided between the fourth metal substrate 110d and the second metal substrate 110b, and formed on the substrate 100, wherein the UV LED 200 is mounted therein.
  • the substrate 100 including the cavity 101, the UV LED (UltraViolet Light Emitting Diode) 200 mounted on the cavity 101 of the substrate 100, and the cavity 10 to cover the cavity 101.
  • the cover substrate 300 installed on the upper side, the sensing material 310 provided on the lower surface of the cover substrate 300 to be activated by the UV irradiated from the UV LED 200 to react with a specific gas, and the sensing material 310 To be electrically connected to each) First and second sensing electrodes to insulate the first and second sensing electrodes 340 and 350, the first and second sensing electrodes 340 and 350, and the cover substrate 300 provided on the bottom surface of the buggy 300.
  • the first and second insulating layers 320 and 330 may be provided between the electrodes 340 and 350 and the lower surface of the cover substrate 300, respectively.
  • the substrate 100 is formed by joining the first to fourth metal substrates 110a to 110d and the first to third vertical insulation portions 130a to 130c.
  • the first metal substrate 110a and the second metal substrate 110b are joined to the right side and the left side by the first vertical insulation unit 130a, respectively, and the third metal substrate 110c and the first metal substrate 110a.
  • the right and left sides are joined to each other by the second vertical insulation unit 130b, and the left and right sides are respectively joined to the fourth metal substrate 110d and the second metal substrate 110b by the third vertical insulation unit. do.
  • the first to fourth metal substrates 110a to 110d may be formed of a metal plate having excellent electrical conductivity and thermal conductivity.
  • the first to fourth metal substrates 110a to 110d may be formed of any one selected from aluminum, aluminum alloy, copper, copper alloy, iron, iron alloy, and equivalents, but the present invention is not limited thereto. .
  • the first vertical insulation portion 130a is vertically disposed between the right side surface of the first metal substrate 110a and the left side surface of the second metal substrate 110b, and the first metal substrate 110a and the second metal substrate 110b. Electrically insulating and bonding the first metal substrate 110a and the second metal substrate 110b to each other.
  • the first metal substrate 110a and the second metal substrate 110b are electrically insulated from each other by the first vertical insulating portion 130a, and thus, the first metal substrate 110a and the second metal substrate ( Different electrodes may be applied to 110b).
  • the second vertical insulation portion 130b is disposed perpendicularly between the right side surface of the third metal substrate 110c and the left side surface of the first metal substrate 110a, and the third metal substrate 110c and the first metal substrate 110a. Electrically insulating and bonding the third metal substrate 110c and the first metal substrate 110a to each other.
  • the third metal substrate 110c and the first metal substrate 110a are electrically insulated from each other by the second vertical insulating portion 130b, and thus, the third metal substrate 110c and the first metal substrate ( Different electrodes may be applied to 110a).
  • the third vertical insulation portion 130c is disposed perpendicularly between the left side surface of the fourth metal substrate 110d and the right side surface of the second metal substrate 110b, and the fourth metal substrate 110d and the second metal substrate 110b. To electrically insulate the second metal substrate 110d and the second metal substrate 110b.
  • the fourth metal substrate 110d and the second metal substrate 110b are electrically insulated from each other by the third vertical insulation portion 130c, and thus, the fourth metal substrate 110d and the second metal substrate ( Different electrodes may be applied to 110b).
  • the first to third vertical insulation portions 130a to 130c include a conventional insulating sheet, Benzo Cyclo Butene (BCB), Bismaleimide Trizine (BT), Poly Benz Oxazole (PBO), PolyImide (PI), phenolicresin, epoxy, and silicone (silicone). And the equivalent may be formed of any one selected from, but the present invention is not limited to such a material.
  • BCB Benzo Cyclo Butene
  • BT Bismaleimide Trizine
  • PBO Poly Benz Oxazole
  • PI PolyImide
  • phenolicresin epoxy
  • silicone silicone
  • the cavity 101 is formed on the substrate 100, and the UV LED 200 is mounted therein.
  • the cavity 101 has a bowl shape in which the width thereof becomes smaller toward the bottom. Therefore, the cavity 101 is provided with the inclined surface 102, the inclined surface 102 is formed to be inclined from the outside to the inward direction.
  • the cavity 101 is formed in a bowl shape, whereby the lower width of the cavity 101 is smaller than the upper width of the cavity 101.
  • the inclined surface 102 as described above may function to reflect the UV generated and irradiated by the UV LED 200.
  • a cover seating portion (not shown) is formed at an upper portion of the first cavity 101.
  • the cover seat portion is formed in the substrate so that a portion of the lower portion is in communication with the upper portion of the cavity 101, the cover substrate 300 is seated on the stepped portion of the cover seat portion, the cover substrate 300 is located inside the cover seat portion .
  • the stepped portion is a portion of the lower portion of the cover seating portion that does not communicate with the cavity 101, that is, the remaining area of the cover seating portion.
  • the cover seating portion has a diameter larger than the diameter of the cavity 101. Therefore, the width of the cover seat is larger than the width of the upper and lower portions of the cavity 101.
  • the depth of the cover seating portion is preferably equal to the thickness of the cover substrate 300. This is for the upper surface of the substrate 100 and the upper surface of the cover substrate 300 to be positioned on the same plane when the cover substrate 300 is mounted on the cover seat.
  • the cavity 101 and the cover seating part may be formed by processing the cover seating part in the substrate 100 and then processing the cavity 101.
  • the upper portion of the first to fourth metal substrates 110a to 110d and the first to third vertical insulation portions 130a to 130c of the substrate 100 is processed to form a cover seat, and then the cover
  • the cavity 101 may be formed by processing the upper portions of the first and second metal substrates 110a and 110b and the first vertical insulation portion 130a under the seating portion.
  • the cavity 101 and the cover seat may be formed by mechanical processing.
  • the cover seating portion is not provided, and the cover substrate 300 may be bonded to the upper surface of the substrate 100.
  • a part of the lower surface of the cover substrate 300 is bonded to the upper surface of the substrate 100, that is, the cover substrate 300 is attached to the upper portion of the substrate 100, so that the cover seating part may not be provided. It is.
  • there is no need to form a separate cover seating portion there is an advantage that the manufacturing of the substrate 100 is easy, and the manufacturing time is shortened.
  • the UV LED 200 is mounted in the cavity 101 of the substrate 100 and functions to irradiate UV.
  • the UV LED 200 may be mounted in the cavity 101 in a flip chip form, as shown in FIG. 1.
  • the first junction 210 of the bottom of the UV LED 200 is electrically connected to the first metal substrate 110a
  • the second junction 220 of the bottom of the UV LED 200 is a second metal substrate ( Electrical connection to 110b). Accordingly, different electrodes are applied to the first metal substrate 110a and the second metal substrate 110b, whereby the UV LED 200 may generate UV.
  • the first and second junctions 210 and 220 may be made of a metal material through which electricity is passed.
  • the UV LED 200 may be a vertical UV LED 200 having a terminal electrically connected up and down.
  • the UV LED 200 is mounted on the upper surface of any one of the first metal substrate 110a and the second metal substrate 110b so that the terminals of the bottom surface of the UV LED 200 are the first metal substrate 110a and Electrically connected to any one of the second metal substrate 110b, the wire (not shown) is the terminal of the upper surface of the UV LED 200 and the other of the first metal substrate 110a and the second metal substrate 110b. It can be connected with. Therefore, different electrodes are applied to the first metal substrate 110a and the second metal substrate 110b, whereby the UV LED 200 can generate UV.
  • the cover substrate 300 is installed on the upper portion of the cavity 101 to cover the cavity 101 of the substrate 100.
  • the cover substrate 300 may include a gas through hole 301 penetrating the upper and lower surfaces of the cover substrate 300, and the gas through hole 301 serves as a passage through which the gas to be measured flows in or out.
  • the cover substrate 300 may be made of a metal material, and in particular, may be made of aluminum or an aluminum alloy material.
  • the first and second insulating layers 320 and 330 and the first and second sensing electrodes 340 and 350 may be sequentially stacked on the bottom surface of the cover substrate 300.
  • the center of the bottom surface of the cover substrate 300 may be formed.
  • the sensing material 310 may be formed.
  • the outer portion of the cover substrate 300 may be seated on the stepped portion of the cover seat.
  • an insulating adhesive 305 may be provided on the outer side of the cover substrate 300.
  • the insulating adhesive 305 is formed on the outer side and the lower surface of the outer portion of the cover substrate 300 to thereby bond the cover substrate 300 to the substrate 100 and to insulate the cover substrate 300 and the substrate 100. To function.
  • the cover substrate 300 and the substrate 100 may be electrically connected to prevent short circuit.
  • the insulating adhesive 305 is any one selected from conventional insulating sheets, Benzo Cyclo Butene (BCB), Bismaleimide Trizine (BT), Poly Benz Oxazole (PBO), PolyImide (PI), phenolicresin, epoxy, silicone, and equivalents thereof. It may be formed as one, but the present invention is not limited to such a material.
  • BCB Benzo Cyclo Butene
  • BT Bismaleimide Trizine
  • PBO Poly Benz Oxazole
  • PI PolyImide
  • phenolicresin epoxy, silicone, and equivalents thereof. It may be formed as one, but the present invention is not limited to such a material.
  • Surface reflection treatment may be performed on an area corresponding to the cavity 101 (the 'A' region in FIG. 2) of the bottom surface of the cover substrate 300.
  • the surface of the bottom surface of the cover substrate 300 is polished to lower the surface roughness of the cover substrate 300 to increase the reflectivity of the cover substrate 300. Treatment.
  • the UV irradiated from the UV LED 200 is reflected in the 'A' region, and is reflected back to the bottom surface and the inclined surface 102 of the cavity 101.
  • the irradiation amount of the sensing material 310 irradiated by UV may increase. Therefore, the efficiency of irradiation of the UV to the sensing material 310 can be increased, and through this, there is an effect of increasing the energy efficiency and detection accuracy of the gas sensor 10 using the UV LED 200.
  • Hydrophobic treatment may be performed on the upper surface of the cover substrate 300, in particular, the upper surface on which the gas perforation hole 301 is formed, thereby preventing the penetration of moisture into the gas perforation hole 301.
  • the sensing material 310 is activated by UV irradiated from the UV LED 200 to function to react with a specific gas and is provided on the bottom surface of the cover substrate 300.
  • the sensing material 310 may be positioned to correspond to the upper portion of the UV LED 200 such that its center point is located on the same vertical line as the center point of the UV LED 200 mounted in the cavity 101. 1 to 3, since the UV LED 200 is mounted at the center of the cavity 101, that is, at the center of the gas sensor 10 using the UV LED 200, the sensing material 310 also covers correspondingly. It is formed in the center of the lower surface of the substrate 300.
  • the sensing material 310 includes a metal oxide and may include a film oxide, nanoparticles, porous forms, or core / shell nanowires.
  • the sensing material 310 may be made of any one of ZnO, SnO 2 , and TiO 2 .
  • the sensing material 310 when activated by UV, it reacts with H 2 or NO 2 gas. When the sensing material 310 is SnO 2 , it is reacted with O 3 gas when activated by UV. When the sensing material 310 is TiO 2 , when activated by UV, formaldehyde Reacts with gas
  • the gas sensor 10 using the UV LED 200 may further include a sensing material bonding part (not shown) provided between the sensing material 310 and the lower surface of the cover substrate 300.
  • a sensing material bonding part (not shown) may be provided between the sensing material 310 and the lower surface of the cover substrate 300.
  • the sensing material bonding part functions to bond the sensing material 310 and the lower surface of the cover substrate 300 so that the sensing material 310 is easily formed and provided on the lower surface of the cover substrate 300.
  • 310 is preferably formed to have a size corresponding to the size of.
  • the sensing material junction may be made of an anodizing material having pores.
  • the anodization layer may be made of anodized aluminum (Al 2 O 3 ) material after anodizing aluminum (Al) and removing the aluminum (Al) and the barrier layer.
  • a barrier layer and a porous layer having a plurality of pores formed on the barrier layer are formed on the barley aluminum (Al).
  • Al aluminum
  • the barrier layer is removed from the aluminum (Al) sensing material junction, only the sensing material junction of anodized aluminum (Al 2 O 3 ) material remains.
  • the sensing material junction has an anodized film made of anodized aluminum (Al 2 O 3 ), and a plurality of pores penetrating the upper and lower sides of the sensing material junction are formed in the sensing material junction.
  • the pore has a diameter of several tens of nanometers, and a portion of the sensing material 310 is inserted into the pore, so that the sensing material 310 can be easily bonded to the sensing material bonding portion. Therefore, the sensing material 310 may be easily bonded and formed on the bottom surface of the cover substrate 300 by the sensing material bonding part as described above.
  • the sensing material bonding portion is made of an anodized oxide material having a pore, and the plurality of pores is provided, and a portion of the sensing material 310 is inserted into the plurality of pores, whereby the sensing material 310 is covered with a cover substrate ( 300 can be easily bonded and formed on the lower surface of the.
  • the sensing material bonding part may be provided by directly growing anodized aluminum (Al 2 O 3 ) on the cover substrate 300.
  • anodized aluminum oxide (Al 2 O 3 ) directly grown on the cover substrate 300 may be grown from the top to the lower direction so as to be provided on the bottom surface of the cover substrate 300.
  • a portion of the sensing material 310 is inserted into the pores of the sensing material bonding portion formed by directly growing on the cover substrate 300, so that the bottom surface of the sensing material 310 and the sensing material 310 are firmly bonded. This can be achieved.
  • the sensing material bonding part may be a groove formed on the bottom surface of the cover substrate 300, in which case, a part of the sensing material 310 is inserted into the groove, so that the sensing material 310 may be easily bonded to the sensing material bonding part. have. Therefore, the sensing material 310 may be easily bonded and formed on the bottom surface of the cover substrate 300 by the sensing material bonding part as described above.
  • the first and second insulating layers 320 and 330 of the first and second sensing electrodes 340 and 350 and the cover substrate 300 are insulated from each other to insulate the cover substrate 300 from the first and second sensing electrodes 340 and 350. It is provided between the lower surface.
  • the first insulating layer 320 is formed between the upper surface of the first sensing electrode 340 and the lower surface of the cover substrate 300 to insulate the first sensing electrode 340 from the cover substrate 300.
  • the second insulating layer 330 is formed between the upper surface of the second sensing electrode 350 and the lower surface of the cover substrate 300 to insulate the second sensing electrode 350 from the cover substrate 300.
  • first and second insulating layers 320 and 330 are formed on the bottom surface of the cover substrate 300, and first and second sensing electrodes 340 on the bottom surface of the first and second insulating layers 320 and 330. 350 is formed and provided.
  • the first and second sensing electrodes 340 and 350 may be insulated from the cover substrate 300.
  • the electrical characteristic change of the 310 may be converted into an electrical signal and prevented from being transmitted to the cover substrate 300.
  • the first and second insulating layers 320 and 330 are conventional insulating sheets, Benzo Cyclo Butene (BCB), Bismaleimide Trizine (BT), Poly Benz Oxazole (PBO), PolyImide (PI), phenolicresin, epoxy, silicone and It may be formed of any one selected from the equivalents, but the present invention is not limited to these materials.
  • the first and second sensing electrodes 340 and 350 are provided on the bottom surface of the cover substrate 300 to be electrically connected to the sensing material 310 of the cover substrate 300, respectively.
  • First and second insulating layers 320 and 330 are formed on the bottom surface of the cover substrate 300, and first and second sensing electrodes 340 and 350 are formed on the bottom surfaces of the first and second insulating layers 320 and 330.
  • the sensing material 310 is formed on the bottom surface of the partial region of the first and second sensing electrodes 340 and 350 and the bottom surface of the cover substrate 300.
  • the first solder 341 may be provided on the lower surface of the other side of the first sensing electrode 340.
  • the first solder 341 serves to electrically connect the other side of the first sensing electrode 340 to the third metal substrate 110c. Accordingly, one side of the first sensing electrode 340 may be electrically connected to the sensing material 310, and the other side of the first sensing electrode 340 may be electrically connected to the third metal substrate through the first solder 341.
  • the second solder 351 may be provided on the lower surface of the second sensing electrode 350.
  • the second solder 351 serves to electrically connect the other side of the second sensing electrode 350 and the fourth metal substrate 110d. Therefore, one side of the second sensing electrode 350 may be electrically connected to the sensing material 310, and the other side of the second sensing electrode 350 may be electrically connected to the fourth metal substrate through the second solder 351.
  • the first and second sensing electrodes 340 and 350 are electrically connected to the sensing material 310 to transmit the changed electrical characteristics of the sensing material 310 when the sensing material 310 reacts with a specific gas. Do it.
  • the operation unit when the substrate 100 is connected to the PCB (not shown), the operation unit (not shown) may be electrically connected to the third metal substrate 110c and the fourth metal substrate 110d, thereby providing first and second sensing electrodes.
  • the changes in electrical characteristics of the sensing material 310 may be transmitted to the operation unit through the units 340 and 350.
  • UV When UV is generated by applying electricity to the UV LED 200, the UV is irradiated on the lower surface of the sensing material 310. Since UV has a photon energy greater than that of the band cap of the sensing material 310, when the UV is irradiated to the sensing material 310, electron-hole pairs (EHP) are generated in the sensing material 310, and the electron- Carrier supplied by the hole pair (EHP) to ensure a sufficient level of carrier to improve the gas detection sensitivity of the sensing material (310).
  • EHP electron-hole pairs
  • the gas to be measured is introduced through the gas transmission hole 301 of the cover substrate 300 and the gas to be adsorbed is detected on the sensing material 310 activated by UV, a specific gas among the gas to be measured is detected. 310).
  • the sensing material 310 reacts with a specific gas, the electrical properties of the sensing material 310 change, and the first and second sensing electrodes 340 and 350 change the electrical properties of the sensing material 310.
  • the second solder 341 and 351 and the third and fourth metal substrates 100c and 100d are transferred to the operation unit.
  • the calculator measures the concentration of the specific gas by measuring resistance changes of the first and second sensing electrodes 340 and 350.
  • Methods of irradiating UV to the sensing material 310 include a method of continuously irradiating UV and a method of irradiating pulsed UV.
  • UV irradiate UV of 1.0 to 1.5 mW / cm 2 intensity in the case of continuously irradiating UV, and in case of irradiating pulsed UV, a predetermined duration (eg, 100 ms And pulsed UV of a predetermined duty cycle (eg 10%).
  • the gas sensor 10 using the UV LED 200 according to the first embodiment of the present invention by irradiating UV through the UV LED 200 to activate the sensing material 310, a specific gas Measure the concentration of Therefore, unlike the conventional gas sensor, it is possible to measure the concentration of the gas at room temperature.
  • the conventional gas sensor was required to heat the sensing material to a relatively high temperature (eg, 250 ° C.) with a heater in order to effectively adsorb the specific gas to the sensing material.
  • a relatively high temperature eg, 250 ° C.
  • the sensing material having a photon energy larger than the band gap of the sensing material 310 ( 310 to measure the concentration of a specific gas at room temperature.
  • the gas sensor 10 using the UV LED 200 can measure the concentration of the specific gas at room temperature, an error occurs in the measurement of the concentration of the specific gas due to the convection of the gas to be measured by the high temperature. The problem can be solved.
  • the aforementioned cover substrate 300 functions to cover the upper portion of the cavity 101 to protect the UV LED 200 and to provide a place where the sensing material 310 is provided.
  • the sensing material 310 is provided on the lower surface of the cover substrate 300, UV may be directly irradiated on the lower surface of the sensing material 310, and the irradiation distance of the UV irradiated from the UV LED 200 is There is a short advantage. Therefore, the irradiation efficiency of UV is increased, and through this, there is an effect of increasing the energy efficiency and the gas detection efficiency of the gas sensor 10 using the UV LED 200.
  • the UV LED 200 is electrically connected to the first and second metal substrates 110a and 110b of the substrate 100, and the first and second metal substrates 100c and 100d are connected to the first and second metal substrates 110a and 110b.
  • the sensing electrodes 340 and 350 are electrically connected to each other.
  • the substrate 100 is electrically connected to the first and second sensing electrodes 340 and 350 and the electrically applied substrate including the first and second metal substrates 110a and 110b for applying electricity to the UV LED 200.
  • the resistance measurement substrate may be divided into third and fourth metal substrates 100c and 100d capable of measuring a resistance value.
  • the electrically applied substrate and the resistance measurement substrate are electrically independent of each other by the first to third vertical insulation portions 130a to 130c.
  • the first and second metal substrates 110a and 110b that is, when the positive electrode is applied to different electrodes (for example, the first metal substrate 110a) to drive the UV LEDs 200 to the electrically applied substrate,
  • Electrode is applied to the second metal substrate 110b, and the third and fourth metal substrates 100c and 100d, that is, the resistance measurement substrate, are the first and second sensing electrodes 340 and 350. Since it functions to measure the resistance change of the electrical signal transmitted to the device, it is easy to measure the resistance change through the first and second sensing electrodes 340 and 350 even when a pulse voltage (alternating voltage) is applied to the substrate. have.
  • the UV LED 200 irradiates the pulsed UV, it is possible to easily detect the change in the electrical properties of the sensing material (310).
  • the activation of the sensing material 310 through the irradiation of the pulsed UV can improve the sensitivity of the gas sensor 10 using the UV LED 200 than the activation of the sensing material 310 through the continuous UV irradiation. There is an advantage.
  • the sensing material when the first and second sensing electrodes 340 and 350 are adsorbed to the sensing material 310, the sensing material ( By measuring the change in the capacitance value of the capacitance 310, the concentration of the gas to be measured, that is, the specific gas, may be measured.
  • the sensing material 310 when the sensing material 310 is activated by UV irradiated from the UV LED 200, and when a gas to be measured, that is, a specific gas is adsorbed to the sensing material 310, the capacitance value of the sensing material 310 is increased.
  • the first and second sensing electrodes 340 and 350 transmit the change in the capacitance value of the sensing material 310 to the measurement computing unit so that the computing unit can measure the changed electrical characteristics of the sensing material 310. .
  • FIG. 4 is a cross-sectional view of a gas sensor using a UV LED according to a second embodiment of the present invention.
  • the gas inlet hole 301a and the gas outlet hole 301b may include the first and second insulating layers 320 and 330 and the first and second sensing electrodes 340 and 350.
  • the lower portion of the gas inlet hole 301a and the gas outlet hole 301b may be formed on the first and second insulating layers 320 and 330 and the first and second sensing electrodes 340 and 350. The lower part is not blocked. Therefore, the external measurement target gas can be easily introduced into the cavity 101 through the gas inlet hole 301a, and the measurement target gas in the cavity 101 can be easily discharged to the outside through the gas outlet hole 301b. Can be.
  • the gas sensor 10 'using the UV LED 200 according to the second preferred embodiment of the present invention is compared with the gas sensor 10 using the UV LED 200 according to the first preferred embodiment of the present invention.
  • the positions of the first vertical insulation unit 130a, the UV LED 200, and the sensing material 310 are changed, and the gas inlet hole 301 according to the function of the gas inlet hole 301a and the gas outlet hole 301b.
  • the difference is that it is divided into, and the remaining components are the same. Therefore, duplicate description of the same component is abbreviate
  • the gas sensor 10 ′ using the UV LED 200 according to the second embodiment of the present invention includes a gas inlet hole 301a and a gas penetrating the upper and lower surfaces of the cover substrate 300 on the cover substrate 300.
  • Outlet hole 301b may be provided.
  • the gas inlet hole 301a may be located in the upper region of the first metal substrate 110a
  • the gas outlet hole 301b may be located in the upper region of the second metal substrate 110b.
  • the UV LED 200 is located close to the lower region of the gas outlet hole 301b, and the sensing material 310 is positioned to correspond to the upper region of the UV LED 200.
  • the distance from the centerline C1 of the gas inlet hole 301a to the centerline C3 of the UV LED 200 is from the centerline C2 of the gas outlet hole 301b to the centerline C3 of the UV LED 200. Is greater than the distance.
  • the positional relationship between the gas inlet hole 301a, the gas outlet hole 301b, and the UV LED 200 is' from the center line C1 of the gas inlet hole 301a to the center line C3 of the UV LED 200.
  • Distance > satisfies the relationship 'distance from the center line C2 of the gas outlet hole 301b to the center line C3 of the UV LED 200'.
  • the first vertical insulator 130a is also positioned to be inclined in the direction of the third vertical insulator 130c. Done. Therefore, the distance between the first vertical insulation portion 130a and the second vertical insulation portion 130b is greater than the distance between the first vertical insulation portion 130a and the third vertical insulation portion 130c. In other words, the relationship between the distance between the first vertical insulation unit 130a and the second vertical insulation unit 130b> the distance between the first vertical insulation unit 130a and the third vertical insulation unit 130c is satisfied. As a result, the area of the first metal substrate 110a is larger than that of the second metal substrate 110b.
  • Hydrophobic treatment may be performed on the upper surface of the cover substrate 300, in particular, the upper surface on which the gas inlet hole 301a and the gas outlet hole 301b are formed, and thus, the gas inlet hole 301a and the gas outlet hole 301b. This can prevent moisture from penetrating.
  • Gas sensor 10 'using the UV LED 200 according to the second embodiment of the present invention having the above configuration has the following effects.
  • the UV LED 200 When UV is generated in the UV LED 200, the UV LED 200 is heated to a high temperature. Therefore, the temperature rises in the cavity 101 according to the operation of the UV LED 200. As a result, when the gas to be measured is not introduced into the cavity 101 through the gas penetration hole 301 of the first embodiment. May occur.
  • the UV LED 200 when the UV LED 200 is located close to the lower region of the gas outlet hole 301b, due to the temperature rise in the cavity 101, the gases in the cavity 101 are heated to a high temperature so that the gas outlet hole ( 301b). As such, as gases in the cavity 101 flow out, gases outside the gas sensor 10 ′ using the UV LED 200 are easily introduced into the cavity 101 through the gas inlet hole 301a.
  • the gas sensor 10 ′ using the UV LED 200 according to the second exemplary embodiment of the present invention transmits the position of the UV LED 200 to one of the gas permeation holes 301 of the first embodiment.
  • the gas sensor 10 ′ using the UV LED 200 according to the second exemplary embodiment of the present invention transmits the position of the UV LED 200 to one of the gas permeation holes 301 of the first embodiment.
  • FIG. 5 is a cross-sectional view of a gas sensor using a UV LED according to a third embodiment of the present invention.
  • the pore 306 and the gas penetration hole 301 are formed by the first and second insulating layers 320 and 330 and the first and second sensing electrodes 340 and 350.
  • the lower part is shown as being blocked, the pore 306 and the gas permeation hole 301 are lowered by the first and second insulating layers 320 and 330 and the first and second sensing electrodes 340 and 350. It is not blocked. Therefore, the external measurement target gas may be easily introduced into the cavity 101 through the gas perforation hole 301, or the measurement target gas in the cavity 101 may easily flow out to the outside.
  • Gas sensor 10 ′′ using UV LED 200 according to the third preferred embodiment of the present invention is compared with gas sensor 10 using UV LED 200 according to the first preferred embodiment of the present invention described above.
  • the material of the cover substrate 300 ' is different and the pores 306 are formed on the cover substrate 300', except that the remaining components are the same. The description will be omitted.
  • the cover substrate 300 ′ of the gas sensor 10 ′′ using the UV LED 200 according to the third exemplary embodiment of the present invention may be formed of an anodized oxide material having a pore 306.
  • the anodization film may be made of anodized aluminum (Al 2 O 3 ) after anodizing aluminum (Al) and removing the aluminum (Al) and the barrier layer.
  • the barrier layer 307 and the pores formed on the barrier layer 307 are formed on the barrier aluminum Al.
  • a layer is formed.
  • the aluminum (Al) is removed from the cover substrate 300 ′ made of aluminum (Al) and turned over, as shown in FIG. 5, anodization with the barrier layer 307 formed on the pore 306 is performed.
  • the cover substrate 300 ' is made of aluminum (Al 2 O 3 ).
  • the cover substrate 300 ′ has an anodized oxide material made of anodized aluminum (Al 2 O 3 ), and the plurality of pores 306 opening the lower portion of the cover substrate 300 ′ to the cover substrate 300 ′. Is formed.
  • the cover substrate 300 ′ may be provided with a gas through hole 301 penetrating the top and bottom of the cover substrate 300 ′.
  • the gas penetration hole 301 may be formed by etching the cover substrate 300 ′. In this case, since the pore 306 is formed in the vertical direction, that is, in the vertical direction of the cover substrate 300 ', the gas permeation hole 301 can be easily formed.
  • the pore 306 is formed to be open to the area where the sensing material 310 is provided, that is, the lower surface of the cover substrate 300 ′.
  • the sensing material 310 when the sensing material 310 is provided on the bottom surface of the cover substrate 300 ', although not shown in FIG. 5, a part of the upper surface portion of the sensing material 310 is the pore 306 of the cover substrate 300'. Can be inserted in That is, the pore 306 serves as an anchor to facilitate the bonding between the upper surface of the sensing material 310 and the lower surface of the cover substrate 300 ′.
  • the sensing material 310 can be easily provided on the cover substrate 300 '.
  • the cover junction part of the first embodiment may achieve the function of the cover junction part even if the cover junction part of the first embodiment is not provided separately. will be.
  • the cover substrate 300 ′ made of an anodized film is an insulating member, the insulating adhesive 305, the first insulating layer 320, and the second insulating layer 330 of the first embodiment may not be provided. .
  • the first sensing electrode 340 and the second sensing electrode 350 are formed on the bottom surface of the cover substrate 300 ′.
  • the cover substrate 300 ′ may be installed on the substrate 100 with the barrier layer 307 removed. As the barrier layer 307 is removed as described above, the pore 306 may be formed to penetrate the upper and lower surfaces of the cover substrate 300 ′.
  • the sensing material 310 may be formed by being inserted into the pore 306 to grow.
  • the sensing material 310 is inserted into the pore 306, and the sensing material 310 is grown in the direction of the lower surface of the cover substrate 300 ′, whereby the sensing material 310 is covered by the cover substrate 300 ′. It is provided on the lower surface.
  • the sensing material 310 grown in the pore 306 is grown in the form of nanotubes.
  • the sensing material 310 grows in the direction of the bottom surface of the cover substrate 300 ′, the grown sensing material 310 having a plurality of nanotube shapes is connected to each other on the bottom surface of the cover substrate 300 ′.
  • the first and second sensing electrodes 340 and 350 may be formed on the bottom surface of the cover substrate 300 'to be provided between the sensing material 310 and the cover substrate 300'.
  • the sensing material 310 As described above, as the sensing material 310 is provided while being inserted into the pore 306, the sensing material 310 is not formed in the existing drop method, and the sensing material 310 is formed in the nanotube form. Can be.
  • the nanotube-type sensing material 310 has an advantage of high gas measurement sensitivity.
  • the sensing material 310 can be grown in the pore while being inserted into the pore, the area in which the sensing material 310 is to be formed is effectively formed according to the irradiation amount and irradiation angle of UV irradiated from the UV LED 200. I can regulate it.
  • a hydrophobic treatment may be performed on the upper surface of the cover substrate 300 ′, in particular, the upper surface on which the gas permeation hole 301 is formed, thereby preventing moisture from penetrating into the gas permeation hole 301.
  • 110a first metal substrate 110b: second metal substrate
  • first vertical insulator 130b second vertical insulator
  • UV LED 210 first junction
  • insulation binder 306 pore
  • sensing material 320 first insulating layer

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Abstract

La présente invention concerne un capteur de gaz utilisant une DEL UV, qui détecte un gaz spécifique par irradiation d'UV sur un matériau de détection pour activer le matériau et, en particulier, un capteur de gaz utilisant une DEL UV, qui est capable de mesurer la concentration, etc. d'un gaz même à température ambiante.
PCT/KR2018/016338 2018-07-23 2018-12-20 Capteur de gaz utilisant une del uv WO2020022590A1 (fr)

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KR1020180085613A KR20200010942A (ko) 2018-07-23 2018-07-23 Uv led를 이용한 가스센서
KR10-2018-0085613 2018-07-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11952293B2 (en) 2019-03-07 2024-04-09 International Water-Guard Industries Inc. Apparatus for disinfecting a fluid

Families Citing this family (2)

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KR20210152331A (ko) 2020-06-08 2021-12-15 전북대학교산학협력단 Ⅲ-ⅴ족 화합물반도체 나노구조와 그래핀을 이용한 광 기반 상온 동작 특성을 갖는 가스센서
KR20230032225A (ko) * 2021-08-30 2023-03-07 (주)포인트엔지니어링 Uv led를 이용한 가스센서

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140074269A (ko) * 2011-06-08 2014-06-17 알파 모스 에스.아. 다층 구조를 갖는 화학저항 유형 가스 센서
KR20160147465A (ko) * 2015-06-15 2016-12-23 엘지이노텍 주식회사 센서 패키지 및 이의 제조 방법
KR101762394B1 (ko) * 2016-06-09 2017-07-27 (주)센코 광이온화 가스센서
KR20180039350A (ko) * 2016-10-10 2018-04-18 (주)포인트엔지니어링 마이크로 센서 패키지 및 마이크로 센서 패키지 제조방법
KR20180067361A (ko) * 2016-12-12 2018-06-20 엘지이노텍 주식회사 가스 센서, 가스 센서 제조방법 및 가스 감지 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101853296B1 (ko) 2016-09-13 2018-04-30 (주)포인트엔지니어링 마이크로 센서 패키지 및 마이크로 센서 패키지 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140074269A (ko) * 2011-06-08 2014-06-17 알파 모스 에스.아. 다층 구조를 갖는 화학저항 유형 가스 센서
KR20160147465A (ko) * 2015-06-15 2016-12-23 엘지이노텍 주식회사 센서 패키지 및 이의 제조 방법
KR101762394B1 (ko) * 2016-06-09 2017-07-27 (주)센코 광이온화 가스센서
KR20180039350A (ko) * 2016-10-10 2018-04-18 (주)포인트엔지니어링 마이크로 센서 패키지 및 마이크로 센서 패키지 제조방법
KR20180067361A (ko) * 2016-12-12 2018-06-20 엘지이노텍 주식회사 가스 센서, 가스 센서 제조방법 및 가스 감지 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11952293B2 (en) 2019-03-07 2024-04-09 International Water-Guard Industries Inc. Apparatus for disinfecting a fluid

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