WO2023033264A1 - Capteur de gaz utilisant une del uv - Google Patents

Capteur de gaz utilisant une del uv Download PDF

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Publication number
WO2023033264A1
WO2023033264A1 PCT/KR2021/019649 KR2021019649W WO2023033264A1 WO 2023033264 A1 WO2023033264 A1 WO 2023033264A1 KR 2021019649 W KR2021019649 W KR 2021019649W WO 2023033264 A1 WO2023033264 A1 WO 2023033264A1
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Prior art keywords
substrate
metal substrate
sensing
sensor
led
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PCT/KR2021/019649
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English (en)
Korean (ko)
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안범모
박승호
송태환
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(주)포인트엔지니어링
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Publication of WO2023033264A1 publication Critical patent/WO2023033264A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/129—Diode type sensors, e.g. gas sensitive Schottky diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/062—LED's

Definitions

  • the present invention relates to a gas sensor using a UV LED that senses a specific gas by irradiating a sensing material with UV to activate the sensing material.
  • a gas sensor refers to a sensor that measures the concentration of a gas using electrical characteristics that change when a gas is adsorbed on a sensing material.
  • Such a gas sensor is manufactured in the form of a package installed in a PCB, receives electricity, and measures the concentration of gas.
  • the above gas sensors are widely used to improve the comfort of living spaces and cope with harmful industrial environments, and recently, miniaturization and high-precision gas sensors are being developed.
  • the sensing chip provided in the micro sensor package of Patent Document 1 includes a substrate, a sensor electrode formed on the substrate and electrically connected to the lower portion of the second electrode layer, and a sensor electrode formed on the substrate and electrically connected to the lower portion of the second electrode layer. It is configured to include a heater electrode, and a sensing material covering the sensor wiring of the sensor electrode and the heating wiring of the heater electrode.
  • the concentration of the gas is measured using the changed electrical characteristics.
  • heat is generated from the heating wire of the heater electrode, thereby heating the sensing material.
  • the heating wire heats the sensing electrode to 200°C or higher.
  • the sensing chip of Patent Document 1 cannot perform gas sensing at room temperature (ordinary temperature, 20 ⁇ 5 ° C). As a result, the convection of the gas to be measured by the high temperature and the gas There is a problem that an error in sensing occurs.
  • Patent Document 1 Korea Patent Registration No. 10-1853296
  • the present invention has been made to solve the above problems, and an object of the present invention is to provide a gas sensor using a UV LED capable of measuring the concentration of a gas even at room temperature.
  • a gas sensor using a UV LED includes a light source substrate having a UV LED mounted in a cavity; a sensor substrate installed on an upper portion of the cavity to cover the cavity and having a first through hole penetrating upper and lower surfaces; a sensing material provided to be connected to each other on the upper and lower surfaces of the sensor substrate and inside the first through hole, and activated by UV irradiated from the UV LED to react with a specific gas; and first and second sensing electrodes provided on the sensor substrate to be electrically connected to the sensing material, respectively.
  • the light source substrate may include a first metal substrate; and a second metal substrate electrically distinct from the first metal substrate, wherein the sensing material includes: a first sensing material provided on an upper surface of the sensor substrate; a second sensing material provided on a lower surface of the sensor substrate; and a third sensing material provided inside the first through hole, wherein the first sensing electrode is a 1-1 sensing electrode provided on an upper surface of the sensor substrate to be electrically connected to the first sensing material.
  • first and second sensing electrodes provided on the lower surface of the sensor substrate to be electrically connected to the first metal substrate; and a 1-3 sensing electrode provided inside a second through-hole provided in the sensor substrate to connect the 1-1 sensing electrode and the 1-2 sensing electrode to each other, wherein the second sensing electrode includes the second sensing electrode.
  • Silver is provided on the lower surface of the sensor substrate to electrically connect the second sensing material and the second metal substrate.
  • the light source substrate may include a third metal substrate disposed between the first metal substrate and the second metal substrate; a first vertical insulating layer provided between the first metal substrate and the third metal substrate to electrically insulate the first metal substrate from the third metal substrate; and a second vertical insulating layer provided between the second metal substrate and the third metal substrate to electrically insulate the second metal substrate from the third metal substrate.
  • one side of the UV LED is electrically connected to the first metal substrate, and the other side of the UV LED is electrically connected to the third metal substrate.
  • the sensor substrate is made of an anodic oxide film material.
  • the concentration of a specific gas can be measured by irradiating UV light through a UV LED to activate the sensing material, and through this, the concentration of the gas can be measured at room temperature.
  • UV can be directly irradiated to the lower surface of the second sensing material or indirectly to the first sensing material through the third sensing material, so that the activation of the sensing material is achieved. can be done effectively.
  • UV may be directly irradiated to the first sensing material by the plurality of pores. Accordingly, UV irradiation efficiency is increased, and through this, energy efficiency and gas detection efficiency of the gas sensor using the UV LED may be increased.
  • FIG. 1 is a cross-sectional view of a gas sensor using a UV LED of the present invention.
  • Figure 2 is a cross-sectional view showing that the light source substrate and the sensor substrate of the gas sensor using the UV LED of the present invention are separated.
  • FIG. 3 is a plan view of the sensor substrate of FIG. 2;
  • FIG. 4 is a bottom view of the sensor substrate of FIG. 2;
  • first or second may be used to describe various components, but the components should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another, e.g. without departing from the scope of rights according to the concept of the present invention, a first component may be termed a second component and similarly a second component may be termed a second component. A component may also be referred to as a first component.
  • Figure 1 is a cross-sectional view of a gas sensor using a UV LED of the present invention
  • Figure 2 is a cross-sectional view showing a light source substrate and a sensor substrate of the gas sensor using a UV LED of the present invention are separated
  • Figure 3 is the sensor of Figure 2 It is a plan view of the substrate
  • FIG. 4 is a bottom view of the sensor substrate of FIG. 2 .
  • the gas sensor 10 using the UV LED 130 of the present invention is a light source substrate in which a UV LED (UltraViolet Light Emitting Diode) 130 is mounted in a cavity 140 ( 100); and a sensor substrate installed on the upper portion of the cavity 140 to cover the cavity 140 and having a first through hole 211 and a second through hole 212 penetrating the upper and lower surfaces thereof ( 200); and, provided to be connected to each other on the upper and lower surfaces of the sensor substrate 200 and inside the first through hole 211, and are activated by UV irradiated from the UV LED 130 to detect a specific gas and react It may include a material 220; and first and second sensing electrodes 230 and 240 provided on the sensor substrate 200 to be electrically connected to the sensing material 220, respectively.
  • a UV LED UltraViolet Light Emitting Diode
  • the light source substrate 100 includes a third metal substrate 113 disposed between the first metal substrate 111 and the second metal substrate 112; and, the first metal substrate 111 and the third metal substrate 113 ) is electrically insulated from the first vertical insulating layer 121 provided between the first metal substrate 111 and the third metal substrate 113; and, the second metal substrate 112 and the third metal substrate 113 ) may be configured to include; a second vertical insulating layer 122 provided between the second metal substrate 112 and the third metal substrate 113 so as to be electrically insulated.
  • the light source substrate 100 is formed by bonding the first to third metal substrates 113 and the first vertical insulating layer 121 and the second vertical insulating layer 122 .
  • the first vertical insulating layer 121 is interposed between the first metal substrate 111 and the third metal substrate 113 . Accordingly, the right side and the left side of the first metal substrate 111 and the third metal substrate 113 are bonded by the first vertical insulating layer 121, respectively.
  • the second vertical insulating layer 122 is interposed between the third metal substrate 113 and the second metal substrate 112 . Accordingly, the right side and the left side of the third metal substrate 113 and the second metal substrate 112 are bonded by the first vertical insulating layer 121, respectively.
  • the first to third metal substrates 113 may be formed of metal plates having excellent electrical conductivity and thermal conductivity.
  • the first to third metal substrates 113 may be formed of any one selected from aluminum, aluminum alloy, copper, copper alloy, iron, iron alloy, and equivalents, but the present invention is not limited to these materials.
  • the first vertical insulating layer 121 is vertically disposed between the right side of the first metal substrate 111 and the left side of the third metal substrate 113, and the first metal substrate 111 and the third metal substrate 113 It serves to electrically insulate and bond the first metal substrate 111 and the third metal substrate 113 together.
  • the first metal substrate 111 and the third metal substrate 113 are electrically insulated from each other by the first vertical insulating layer 121, through which the first metal substrate 111 and the third metal substrate ( 113) may be applied with different electrodes.
  • the second vertical insulating layer 122 is vertically disposed between the right side of the third metal substrate 113 and the left side of the second metal substrate 112, and the third metal substrate 113 and the second metal substrate 112 It serves to electrically insulate and bond the third metal substrate 113 and the second metal substrate 112 together.
  • the third metal substrate 113 and the second metal substrate 112 are electrically insulated from each other by the second vertical insulating layer 122, through which the third metal substrate 113 and the second metal substrate ( 112) may be applied with different electrodes.
  • the first vertical insulating layer 121 and the second vertical insulating layer 122 are a conventional insulating sheet, Benzo Cyclo Butene (BCB), Bismaleimide Trizine (BT), Poly Benz Oxazole (PBO), PolyImide (PI), phenolicresin, epoxy , silicon (silicone), and may be formed of any one selected from equivalents thereof, but the present invention is not limited to these materials.
  • BCB Benzo Cyclo Butene
  • BT Bismaleimide Trizine
  • PBO Poly Benz Oxazole
  • PI PolyImide
  • phenolicresin epoxy
  • silicon silicon
  • the cavity 140 is formed on the top of the light source substrate 100, and the UV LED 130 is mounted therein.
  • the cavity 140 has a bowl shape whose width decreases toward the bottom. Therefore, the cavity 140 is provided with an inclined surface 141, and the inclined surface 141 is inclined from the outside to the inside.
  • the cavity 140 is formed in a bowl shape, and because of this, the lower area of the cavity 140 is smaller than the upper area of the cavity 140 .
  • the inclined surface 141 as above may function to reflect UV generated from the UV LED 130 and irradiated.
  • the cavity 140 is formed by processing upper portions of the first to third metal substrates 113 and the first vertical insulating layer 121 and the second vertical insulating layer 122 in the light source substrate 100 .
  • the cavity 140 may be formed by mechanical processing.
  • the UV LED 130 is mounted in the cavity 140 of the light source substrate 100 and functions to irradiate UV.
  • a wire 131 is connected to one side of the UV LED 130.
  • the wire 131 electrically connects one side of the UV LED 130 to the first metal substrate 111 by connecting the first metal substrate 111 and one side of the UV LED 130 .
  • the other side of the UV LED 130 is connected to the upper surface of the third metal substrate 113 . Accordingly, the other side of the UV LED 130 is electrically connected to the third metal substrate 113 .
  • the UV LED 130 may be mounted in the cavity 140 in the form of a flip chip.
  • one side of the UV LED 130 is a first junction (not shown) provided below the UV LED 130
  • the other side of the UV LED 130 is a second junction provided below the UV LED 130. It may be a junction (not shown). Therefore, the first joint at the bottom of the UV LED 130 is electrically connected to the first metal substrate 111, and the second joint at the bottom of the UV LED 130 is electrically connected to the third metal substrate 113.
  • the first and second junctions may be made of a metal material that conducts electricity.
  • a power supply unit 310 is connected to the first metal substrate 111 and the third metal substrate 113 .
  • the power supply unit 310 may operate the UV LED 130 by applying different electrodes to the first metal substrate 111 and the third metal substrate 113 . Accordingly, the UV LED 130 may generate UV by applying power from the power supply unit 310 .
  • First and second conductive layers 151 and 152 may be provided outside the light source substrate 100 .
  • the first conductive layer 151 is provided on the upper surface of the first metal substrate 111 to electrically connect the first sensing electrode 230 (ie, the first and second sensing electrodes 232) and the first metal substrate 111. , and at the same time serves to bond the first metal substrate 111 and the first sensing electrode 230.
  • the second conductive layer 152 is provided on the upper surface of the second metal substrate 112 to electrically connect the second sensing electrode 240 and the second metal substrate 112, and simultaneously with the second metal substrate 112. It serves to bond the second sensing electrode 240.
  • the sensor substrate 200 is installed above the cavity 140 of the light source substrate 100 to cover the cavity 140 .
  • the sensor substrate 200 may be made of a metal material, and in particular, may be made of aluminum or an aluminum alloy material.
  • the sensor substrate 200 may be made of an anodic oxide film material having a plurality of pores (not shown, pores) penetrating the upper and lower surfaces of the sensor substrate 200 .
  • the anodic oxide film may be anodized aluminum (Al 2 O 3 ) material obtained by anodizing aluminum (Al) and then removing aluminum (Al) and the barrier layer.
  • the sensor substrate 200 made of aluminum (Al) is anodized, a barrier layer and a porous layer having a plurality of pores are formed on top of the bary aluminum (Al).
  • aluminum (Al) and the barrier layer are removed from the sensor substrate 200 made of aluminum (Al), only the sensor substrate 200 made of anodized aluminum oxide (Al 2 O 3 ) remains.
  • the sensor substrate 200 has an anodic oxide film material of anodized aluminum oxide (Al 2 O 3 ), and a plurality of pores penetrating the top and bottom of the sensor substrate 200 are formed in the sensor substrate 200 .
  • Al 2 O 3 anodic oxide film material of anodized aluminum oxide
  • the pore has a diameter of several tens of nanometers.
  • the UV light source irradiated from the UV LED 130 passes through these pores, and the first sensing material 221 provided on the upper surface of the sensor substrate 200 and the third sensing material provided in the first through hole 211 ( 223) is effectively activated.
  • the UV light source is transmitted through the pores, so that the sensing material 220 can be activated more effectively.
  • the above-described sensor substrate 200 may be provided by directly growing anodized aluminum oxide (Al 2 O 3 ) on the sensor substrate 200 when the sensor substrate 200 is made of aluminum (Al) or an aluminum alloy material.
  • anodized aluminum oxide (Al 2 O 3 ) directly grown on the sensor substrate 200 may be grown from top to bottom so as to be provided on the lower surface of the sensor substrate 200 .
  • the sensor substrate 200 is provided with a first through hole 211 and a second through hole 212 penetrating the upper and lower surfaces of the sensor substrate 200 .
  • the third sensing material 223 of the sensing material 220 is filled in the first through hole 211 .
  • the 1-1st sensing electrode 231 of the first sensing electrode 230 is filled in the second through hole 212 .
  • the sensing material 220 is provided to be connected to each other on the upper and lower surfaces of the sensor substrate 200 and inside the first through hole 211, and is activated by UV irradiated from the UV LED 130 to react with a specific gas. function.
  • the sensing material 220 includes a first sensing material 221 provided on the upper surface of the sensor substrate 200; and a second sensing material 222 provided on the lower surface of the sensor substrate 200; and a first through-hole.
  • the third sensing material 223 provided inside the hole 211; may be configured to include.
  • the third sensing material 223 connects the first sensing material 221 and the second sensing material 222 inside the first through hole 211, so that the sensing material 220 is formed on the sensor substrate 200,
  • the lower surface and the inside of the first through hole 211 may be provided to be connected to each other.
  • the sensing material 220 includes a metal oxide and may be provided in the form of a film, nanoparticle, porous, or core/shell structure nanowire.
  • the sensing material 220 may be made of any one of ZnO, SnO 2 , and TiO 2 .
  • sensing material 220 When the sensing material 220 is ZnO and activated by UV, it reacts with H 2 or NO 2 gas. When the sensing material 220 is SnO 2 and activated by UV, it reacts with O 3 gas. When the sensing material 220 is TiO 2 and activated by UV, formaldehyde react with gas
  • the first sensing electrode 230 and the second sensing electrode 240 electrically connect the sensing material 220 and the light source substrate 100, so that when the sensing material 220 reacts with a specific gas, the sensing material 220 ) functions to transmit the changed electrical characteristics of
  • the first sensing electrode 230 includes a 1-1 sensing electrode 231 provided on the upper surface of the sensor substrate 200 to be electrically connected to the first sensing material 221; and, the first metal substrate 111 1-2 sensing electrodes 232 provided on the lower surface of the sensor substrate 200 to be electrically connected to; and connecting the 1-1 sensing electrodes 231 and 1-2 sensing electrodes 232 to each other.
  • 1-3 sensing electrodes 233 provided inside the second through hole 212 provided in the sensor substrate 200 so as to do so.
  • the 1-1st sensing electrode 231 is provided on the upper surface of the sensor substrate 20 to be disposed around the first sensing material 221 . Therefore, the 1-1st sensing electrode 231 is electrically connected to the first sensing material 221 .
  • the first and second sensing electrodes 232 are electrically connected to the first metal substrate 111 through the first conductive layer 151 .
  • the 1-3 sensing electrode 233 electrically connects the 1-1 sensing electrode 231 and the 1-2 sensing electrode 232 .
  • the second sensing electrode 240 is provided on the lower surface of the sensor substrate 200 to be electrically connected to the second sensing material 222 and the second metal substrate 112 .
  • the second sensing electrode 240 is provided on the lower surface of the sensor substrate 200 to be disposed around the second sensing material 222 . Accordingly, the second sensing electrode 240 is electrically connected to the second sensing material 222 .
  • the second sensing electrode 240 is electrically connected to the second metal substrate 112 through the second conductive layer 152 .
  • the first sensing unit 320 is connected to the first metal substrate 111 .
  • the second sensing unit 330 is connected to the second metal substrate 112 .
  • first sensing material 221 or the second sensing material 222 reacts with a specific gas, the electrical characteristics of the first sensing material 221 or the second sensing material 222 are changed, 'first sensing material ( 221), the 1-1 sensing electrode 231, the 1-3 sensing electrode 233, the 1-2 sensing electrode 232, the first conductive layer 151, the first metal substrate 111, First sensing unit 320', 'second sensing material 222, second sensing electrode 240, second conductive layer 152, second metal substrate 112, second sensing unit 330' in order is forwarded to
  • the first sensing unit 320 and the second sensing unit 330 may be connected to a calculating unit (not shown) of a PCB (not shown) connected to the light source substrate 100 .
  • the calculation unit may measure a specific gas by calculating the changed electrical characteristics of the sensing material 220 transmitted by the first sensing unit 320 and the second sensing unit 330 .
  • UV When UV is generated by applying electricity to the UV LED 130, UV irradiates the lower surface of the sensing material 220. Since UV has a greater photon energy than the band cap of the sensing material 220, when the sensing material 220 is irradiated with such UV, electron-hole pairs (EHP) are generated in the sensing material 220, and these electron-hole pairs (EHP) are generated in the sensing material 220. A sufficient level of carriers is secured by the carriers supplied by the hole pair EHP, so that gas sensing sensitivity of the sensing material 220 is improved.
  • the target gas flows into the sensor substrate 200 and is adsorbed on the first-first sensing material 220 or the first-second sensing material 220 exposed to the outside, a specific gas among the target gases is measured. reacts to the sensing material 220.
  • the sensing material 220 reacts with a specific gas, the electrical characteristics of the sensing material 220 change, and the first and second sensing electrodes 230 and 240 measure the change in the electrical properties of the sensing material 220 in the first, second, and second sensing electrodes 230 and 240. 2 It is transmitted to the calculation unit through the metal substrates 111 and 112 and the first and second sensing units 320 and 330.
  • the calculation unit measures the concentration of a specific gas by measuring resistance changes of the first and second sensing electrodes 230 and 240 .
  • a method of irradiating UV to the sensing material 220 there are a method of continuously irradiating UV and a method of irradiating pulsed UV.
  • UV in the case of continuously irradiating UV, it is preferable to irradiate UV with an intensity of 1.0 to 1.5 mW/cm 2 , and in the case of irradiating pulsed UV, a predetermined duration (eg, 100 ms) ) and a predetermined duty cycle (eg, 10%) of pulsed UV irradiation is preferred.
  • a predetermined duration eg, 100 ms
  • a predetermined duty cycle eg, 10%
  • the gas sensor 10 using the UV LED 130 according to the first preferred embodiment of the present invention irradiates UV through the UV LED 130 to activate the sensing material 220, thereby activating a specific gas. measure the concentration of Therefore, unlike conventional gas sensors, the gas concentration can be measured at room temperature.
  • a conventional gas sensor needs a heater to heat the sensing material to a relatively high temperature (eg, 250° C.) in order to effectively adsorb a specific gas to the sensing material.
  • a relatively high temperature eg, 250° C.
  • UV having a photon energy greater than the band gap of the sensing material 220 is applied to the sensing material ( 220) to measure the concentration of a specific gas at room temperature.
  • the gas sensor 10 using the UV LED 130 can measure the concentration of a specific gas at room temperature, an error occurs in measuring the concentration of a specific gas due to convection of the target gas due to high temperature. can solve the problem.
  • the above-described sensor substrate 200 serves to cover the upper portion of the cavity 140 to protect the UV LED 130 and to provide a place where the sensing material 220 is provided.
  • the sensing material 220 is provided respectively on the upper and lower surfaces of the sensor substrate 200, UV is directly irradiated on the lower surface of the second sensing material 222, or through the third sensing material 223, the first sensing material ( 221) can be investigated indirectly.
  • the sensor substrate 200 is made of an anodic oxide film having a plurality of pores, UV may be directly irradiated to the first sensing material 221 through the plurality of pores.
  • UV irradiation efficiency is increased, and through this, there is an effect of increasing energy efficiency and gas detection efficiency of the gas sensor 10 using the UV LED 130 .
  • the sensing material ( 220) when the first and second sensing electrodes 230 and 240 adsorb the gas to be measured to the sensing material 220, the sensing material ( 220), the concentration of a target gas, that is, a specific gas, may be measured by measuring a change in capacitance value.
  • the sensing material 220 when the sensing material 220 is activated by UV irradiated from the UV LED 130 and a gas to be measured, that is, a specific gas is adsorbed to the sensing material 220, the capacitance value of the sensing material 220 is When changed, the first and second sensing electrodes 230 and 240 and the first and second sensing units 320 and 330 measure the change in the capacitance value of the sensing material 220 and transmit the change to the calculating unit, so that the calculating unit It is possible to measure the changed electrical characteristics of the sensing material 220 .
  • first vertical insulating layer 122 second vertical insulating layer
  • UV LED 131 wire
  • first conductive layer 152 second conductive layer
  • first sensing material 222 second sensing material
  • first-third sensing electrode 240 second sensing electrode

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Abstract

La présente invention concerne un capteur de gaz utilisant une DEL UV, qui détecte un gaz spécifique par irradiation d'un matériau de détection avec des rayons UV pour activer le matériau de détection. En particulier, la présente invention concerne un capteur de gaz utilisant une DEL UV, qui peut mesurer la concentration et analogue d'un gaz même à température ambiante.
PCT/KR2021/019649 2021-08-30 2021-12-22 Capteur de gaz utilisant une del uv WO2023033264A1 (fr)

Applications Claiming Priority (2)

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KR10-2021-0114809 2021-08-30
KR1020210114809A KR20230032225A (ko) 2021-08-30 2021-08-30 Uv led를 이용한 가스센서

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WO2023033264A1 true WO2023033264A1 (fr) 2023-03-09

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102625936B1 (ko) * 2023-03-16 2024-01-17 주식회사 이너센서 가스 센싱 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140105790A1 (en) * 2011-06-08 2014-04-17 Alain Gaudon Chemoresistor Type Gas Sensor having a Multi-Storey Architecture
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KR20180067361A (ko) * 2016-12-12 2018-06-20 엘지이노텍 주식회사 가스 센서, 가스 센서 제조방법 및 가스 감지 장치
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