WO2020009146A1

WO2020009146A1 - High-frequency passive component and method for producing high-frequency passive component

Info

Publication number: WO2020009146A1
Application number: PCT/JP2019/026457
Authority: WO
Inventors: 理額賀
Original assignee: 株式会社フジクラ
Priority date: 2018-07-06
Filing date: 2019-07-03
Publication date: 2020-01-09
Also published as: JP2020010148A

Abstract

This high-frequency passive component is provided with: a substrate comprising a dielectric material that includes a waveguide region; a conductor layer that abuts the waveguide region so as to surround said waveguide region in a planar view on at least one surface of the substrate in the thickness direction thereof; and a dielectric material layer provided on a side intersecting the thickness direction of the substrate. At least part of the outer peripheral section of the conductor layer is arranged on the dielectric material layer.

Description

High frequency passive component and method of manufacturing high frequency passive component

The present invention relates to a high-frequency passive component having a waveguide structure that can be used for high-frequency communication such as millimeter waves, and a method for manufacturing a high-frequency passive component.
This application claims priority based on Japanese Patent Application No. 2018-128679 for which it applied to Japan on July 6, 2018, and uses the content here.

In recent years, high-speed, large-capacity communication of several gigabits per second (bps) using the millimeter wave band has been proposed, and a part thereof is being realized. As a mode for realizing a small and inexpensive millimeter-wave communication module, for example, Patent Document 1 proposes a mode converter using a post-wall waveguide (Post-wall @ Waveguide).

JP 2014-158243 A

In a substrate provided with wiring for external connection or a waveguide structure for confining an electromagnetic field, if a conductor layer constituting a wide wall or the like of the wiring or the waveguide structure is provided directly above the substrate, the conductor layer may be used depending on the use environment. Was sometimes peeled off. When a substrate material for high frequency applications is selected, it is sometimes required that the substrate material has superior high frequency characteristics rather than adhesion to a conductor layer.

The present invention has been made in view of the above circumstances, and provides a high-frequency passive component capable of suppressing a conductive layer from peeling off from a substrate, and a method for manufacturing the high-frequency passive component.

In order to solve the above-described problem, one embodiment of the present invention provides a substrate formed of a dielectric including a waveguide region, and a conductor in contact with the substrate so as to surround the waveguide region in plan view on at least one surface in a thickness direction of the substrate. A high-frequency passive component, comprising: a layer; and a dielectric layer provided on a side intersecting the thickness direction of the substrate, wherein at least a part of an outer peripheral portion of the conductor layer is disposed on the dielectric layer. I will provide a.

In the high-frequency passive component according to one aspect of the present invention, the surface of the dielectric layer on which the conductor layer is arranged may be roughened.

In the high-frequency passive component according to one aspect of the present invention, a corner of an outer peripheral portion of the conductor layer may be arranged on the dielectric layer.
In the high-frequency passive component according to one aspect of the present invention, the entire outer peripheral portion of the conductor layer may be disposed on the dielectric layer.

The high-frequency passive component according to one aspect of the present invention is configured such that the waveguide region has a waveguide structure surrounded by a wide wall formed on both surfaces of the substrate and a side wall connected to the wide wall. A layer may be at least one of said wide walls.
In the high-frequency passive component according to one aspect of the present invention, at least a part of the conductor layer may be sealed with a resin.

In order to solve the above-described problem, one embodiment of the present invention is a method for manufacturing a high-frequency passive component including a substrate made of a dielectric and a side wall formed on the substrate, the method including a concave portion corresponding to the side wall. Producing a substrate having a first main surface and a second main surface opposite to the first main surface, providing a dielectric layer in the recess, polishing the second main surface of the substrate, Exposing the dielectric layer to the surface obtained by polishing the second main surface and forming the conductor layer so that the outer peripheral portion of the conductor layer is disposed on the dielectric layer; A manufacturing method is provided.

According to one embodiment of the present invention, by adopting the above structure as the arrangement of the dielectric layer and the conductor layer, the conductor layer can be prevented from peeling off from the substrate.

It is sectional drawing which shows embodiment of a high frequency passive component. FIG. 2 is a cross-sectional view taken along a line II-II in FIG. 1, illustrating a pattern of a conductor layer. It is sectional drawing which shows the process of producing a type | mold from a prototype. It is sectional drawing which shows the process of producing a type | mold from a prototype. It is sectional drawing which shows the process of producing a type | mold from a prototype. It is sectional drawing which shows the process of producing a board | substrate from a type | mold. It is sectional drawing which shows the process of producing a board | substrate from a type | mold. It is sectional drawing which shows the process of producing a board | substrate from a type | mold. It is sectional drawing which shows the process of manufacturing a high frequency passive component. It is sectional drawing which shows the process of manufacturing a high frequency passive component. It is sectional drawing which shows the process of manufacturing a high frequency passive component. It is sectional drawing which shows the process of manufacturing a high frequency passive component. It is sectional drawing which shows the process of providing the wiring for external connection in a high frequency passive component. It is sectional drawing which shows the process of providing the wiring for external connection in a high frequency passive component. It is sectional drawing which shows the process of providing the wiring for external connection in a high frequency passive component.

Hereinafter, the present invention will be described based on preferred embodiments with reference to the drawings.

FIG. 1 shows a cross-sectional structure of the high-frequency passive component 100 of the present embodiment. Examples of the substrate 101 include a dielectric substrate such as a glass substrate, a sapphire substrate, a quartz substrate, and a resin substrate. The substrate 101 is preferably made of a material having excellent high-frequency characteristics such as a small dielectric loss tangent. In FIG. 1, the thickness direction of the substrate 101 is shown to be up and down.

導体 The conductor layer 103 is formed on the first main surface 101 a of the substrate 101. The conductor layer 103 can include wiring and the like. In the case of the present embodiment, the space surrounded by the

conductor layers

103 and 102 formed on both the

main surfaces

101a and 101b in the thickness direction of the substrate 101 and the side wall 104 formed on the side of the substrate 101 is a waveguide. The waveguide structure is configured to be a region. This waveguide structure can be used, for example, as a high-frequency device through which a high-frequency signal (electromagnetic wave) such as a millimeter wave is propagated. Although the frequency is not particularly limited, for example, 30 to 300 GHz, 60 to 80 GHz and the like can be mentioned. The waveguide structure may constitute a passive component (passive device) such as a waveguide, a filter, a diplexer, a directional coupler, and a distributor.

誘電 A dielectric layer 106 made of resin or the like is provided on the conductor layer 102 provided on the second main surface 101 b of the substrate 101 and on the side wall 104 on the side of the substrate 101. Here, the side of the substrate 101 is a direction crossing the thickness direction, for example, the longitudinal direction or the width direction of the waveguide structure. Further, a sealing layer 107 made of resin or the like is provided on the conductor layer 103 provided on the first main surface 101a of the substrate 101. The outer peripheral portion 103 a of the conductor layer 103 on the first main surface 101 a of the substrate 101 is arranged on the dielectric layer 106.

According to the present embodiment, by adopting the above structure as the arrangement of the conductor layer 103 and the dielectric layer 106, the conductor layer 103 can be prevented from peeling off from the substrate 101. For this reason, the present invention is not particularly limited. For example, the following hypothesis is considered. If the end face of the conductor layer 103 is arranged on the substrate 101, the conductor layer 103 may peel off from the substrate 101 depending on the use environment. For example, when the temperature rise from low temperature to high temperature or the temperature drop from high temperature to low temperature is excessive, stress between the layers is increased due to the difference in the coefficient of thermal expansion between the material forming the conductor layer 103 and the material forming the substrate 101. May occur. The peeling of the conductor layer 103 starts from the outer peripheral portion 103a of the conductor layer 103. Therefore, by providing the dielectric layer 106 on the side of the substrate 101 and arranging the outer peripheral portion 103a of the conductor layer 103 on the dielectric layer 106, the outer peripheral portion 103a of the conductor layer 103 does not contact the substrate 101, There is a situation where the stress is relieved through the layer 106. Therefore, it is considered that peeling of the outer peripheral portion 103a of the conductor layer 103 can be suppressed.

In general, a material having good high-frequency characteristics has low adhesion to a metal serving as a conductor layer such as a wiring or a wide wall. In order to enhance the adhesion to metal, it is conceivable to roughen the main surface of the substrate on which the conductive layer is provided. Become.
Therefore, the outer peripheral portion 103a of the conductor layer 103, which can be a starting point of the separation, is disposed on the dielectric layer 106 provided outside the waveguide structure. The surface 106a of the dielectric layer 106 on which the conductor layer 103 is arranged may be roughened to increase the adhesion to metal. Here, the surface 106a is a surface along the first main surface 101a of the substrate 101. Since the surface 106a of the dielectric layer 106 on which the conductor layer 103 is disposed is roughened outside the waveguide structure, the roughened surface does not affect the high-frequency characteristics of the waveguide and can be used for metal. Adhesion can be improved.

外周 The outer peripheral portion 103a of the conductor layer 103 disposed on the dielectric layer 106 is preferably at least a corner or the entire outer peripheral portion.

(1) In the waveguide structure shown in FIG. 1, although described in detail later, a through electrode 105 serving as a mode conversion mechanism may be provided. Further, redistribution layers 109 and 111 electrically connected to the conductor layer 103 can be provided over the sealing layer 107. The rewiring layers 109 and 111 can be connected to the conductor layer 103 via

vias

108 and 110, respectively. Here, the via 108 and the rewiring layer 109 are connected to the through-electrode 105 serving as a mode conversion mechanism. The via 110 and the redistribution layer 111 are connected to the side wall 104.

FIG. 2 illustrates a pattern on the plane of the conductor layer 103. The circular pattern having the end face 103c indicates the conductor layer 103 connected to the through electrode 105 serving as a mode conversion mechanism. The two mode conversion mechanisms may be provided at both ends in the longitudinal direction of the waveguide. The surrounding conductor layer 103 is a portion that becomes a wide wall of the waveguide structure. The outer peripheral portion 103a of the conductor layer 103 serving as a wide wall is disposed on the dielectric layer 106 shown in FIG. 1 as described above. Since the end faces 103b and 103c of the conductor layer 103 around the pattern that insulates the wide wall from the mode conversion mechanism have a small pattern or a closed shape, peeling hardly occurs even when the end faces are directly arranged on the substrate 101.

Next, an example of a method for manufacturing the high-frequency passive component of the present embodiment will be described. FIG. 3A, FIG. 3B, and FIG. 3C sequentially show the steps of producing a mold from a prototype. FIG. 4A, FIG. 4B, and FIG. 4C sequentially show steps of manufacturing a substrate from a mold. FIG. 5A, FIG. 5B, FIG. 5C, and FIG. 5D sequentially show steps of manufacturing a high-frequency passive component on a substrate. FIG. 6A, FIG. 6B, and FIG. 6C sequentially show a process of providing a wiring for external connection on the high-frequency passive component.

The method of manufacturing the high-frequency passive component according to the present embodiment has the following steps as shown in FIGS. 3A to 5D.
A step of manufacturing a mold 10 having a concave portion 11 corresponding to a side wall and a concave portion 12 corresponding to a through electrode from glass (FIG. 3A).
A step of using the prototype 10 to fabricate a mold 20 having

projections

21 and 22 corresponding to the

recesses

11 and 12 of the prototype 10 from metal (FIGS. 3B and 3C).
Using the mold 20, the mold 20 has a first main surface 33 where the

concave portions

31 and 32 corresponding to the

convex portions

21 and 22 are opened, and a second main surface 34 opposite to the first main surface 33. Step of manufacturing substrate 35 from substrate material 30 made of resin (FIGS. 4A to 4C).
A step of polishing the second main surface 34 of the substrate 35 to form an exposed portion EX in which a part of the

concave portions

31 and 32 of the substrate 35 is exposed on the second main surface 36 (FIGS. 5A to 5D).
Each of the

concave portions

31 and 32 exposed on the second main surface 36 of the substrate 35 can be provided with a side wall 45 and a through electrode 46.

As shown in FIG. 3A, the prototype 10 has a first main surface 13 in which the

concave portions

11 and 12 are open, and a second main surface 14 on the opposite side to the first main surface 13. The

recesses

11 and 12 do not reach the second main surface 14, and the bottoms of the

recesses

11 and 12 are closed. In the present embodiment, the prototype 10 has the same shape as the substrate 35, and is used to transfer the shape of the prototype 10 to the mold 20, and further to transfer the shape of the mold 20 to the substrate material 30. That is, the prototype 10 is not a mold 20 for directly molding the substrate 35 but a master mold that is a base of the mold 20.

誘電 Glass is an example of a dielectric material constituting the prototype 10. Examples of the glass include multi-component glass, quartz glass (silica glass), and silicate glass. As a material similar to glass, inorganic materials such as sapphire, synthetic quartz, natural quartz, and semiconductors can be used. The dielectric substrate constituting the prototype 10 may be, for example, a wafer-shaped large-area substrate. 3A to 3C, the

concave portions

11 and 12 of the prototype 10 are displayed downward, but the prototype 10 may be arranged in a direction different from the downward direction.

方法 As a method of forming the

concave portions

11 and 12 in the prototype 10, a punching machine such as a drill, a laser, an etching and the like can be mentioned. For example, there is a method in which a material such as glass is locally modified by laser condensing irradiation, and a portion having high solubility due to the modification is selectively removed by wet etching. For example, femtosecond laser-assisted etching enables processing with high positional accuracy and high processing accuracy. The femtosecond laser-assisted etching referred to here means that, first, an ultrashort pulse laser having a pulse width of 10 ps or less is condensed and scanned to form a modified portion including a crack or a structurally modified portion along the condensed portion. Next, a processing method in which the modified portion is selectively etched by etching to provide the

concave portions

11 and 12 and the like. Not only can micropores having a high aspect ratio (ratio of depth to diameter) be formed, but also recesses of any shape including a tapered shape, a stepped shape, and the like can be processed. The tapered shape may have a smaller diameter or shape from the first main surface of the material to the second main surface or inside, or conversely, may have a larger diameter or shape.

3B, as shown in FIG. 3B, the metal is adhered to the

concave portions

11, 12 and the first main surface 13 of the prototype 10 by electroforming, plating, or the like using a metal such as Ni, thereby forming the mold 20. The

protrusions

21 and 22 are made of metal deposited on the

recesses

11 and 12 of the prototype 10, and the base 23 is made of metal deposited on the first main surface 13 of the prototype 10. By peeling the prototype 10 and the mold 20, as shown in FIG. 3C, the mold 20 in which the

protrusions

21 and 22 project from one surface of the base 23 is obtained. Since the material constituting the prototype 10 is excellent in durability, the process of manufacturing the mold 20 from the prototype 10 using the same prototype 10 can be repeated a plurality of times.

4) As shown in FIG. 4A, a substrate material 30 made of resin is prepared, and as shown in FIG. 4B, the substrate material 30 is overlaid on the

protrusions

21 and 22 of the mold 20. Substrate material 30 may be a flat film, sheet, or the like. Preferred resins for the substrate material 30 include cycloolefin copolymer (COC), fluororesin, liquid crystal polymer (LCP) and the like. 4A to 4C, the

protrusions

21 and 22 of the mold 20 are displayed upward, but the mold 20 may be arranged in a direction different from the upward.

When the resin constituting the substrate material 30 is a thermoplastic resin, the resin is softened by heating, the shape of the mold 20 is transferred to the substrate material 30 by the hot embossing method, and the concave portions having the shapes corresponding to the

convex portions

21 and 22 are formed. 31, 32 can be formed. When the substrate material 30 is a curable resin such as a thermosetting resin or a photo-curable resin, the substrate material 30 is applied to the mold 20 in an uncured state having fluidity such as a liquid, and is superimposed on the mold 20. By curing the resin as it is, the

concave portions

31 and 32 having shapes corresponding to the

convex portions

21 and 22 can be formed.

By peeling off the mold 20 and the substrate material 30, a substrate 35 having the

concave portions

31, 32 formed in the first main surface 33 in contact with the base 23 of the mold 20, as shown in FIG. 4C, is obtained. The first main surface 33 is a surface where the

concave portions

31 and 32 are opened. The second main surface 34 is a surface opposite to the first main surface 33. The

recesses

31 and 32 do not reach the second main surface 34, and the bottoms of the

recesses

31 and 32 are closed. Since the material constituting the mold 20 is excellent in durability, the step of forming the substrate 35 having the

concave portions

31 and 32 using the same mold 20 can be repeated a plurality of times.

As shown in FIG. 5A, the first conductor layers 41, 42, and 43 are respectively provided on the concave portion 31, the concave portion 32, and the first main surface 33 with respect to the substrate 35 having the

concave portions

31 and 32 opened on the first main surface 33. Is formed. Specifically, among these conductor layers, the first conductor layer 41 is formed on the inner wall of the recess 31, the first conductor layer 42 is formed on the inner wall of the recess 32, and the first conductor layer 43 is formed on the first wall. It is formed on the main surface 33. In this structure, the first conductor layers 41, 42, 43 are formed so as to conform to the respective surface shapes (inner wall, bottom wall, surface) of the concave portion 31, the concave portion 32, and the first main surface 33. The first conductor layers 41 and formed on the inner walls of the

recesses

31 and 32 are not exposed on the second main surface of the substrate. The first conductor layers 41 and 42 form blind vias.

As a method of forming a conductor layer such as the first conductor layers 41, 42, and 43, one or two or more of a sputtering method, a vapor deposition method, an electroless plating method, an electrolytic plating method, and a method of applying a conductor paste are used. Method. Two or more kinds of conductor materials or film forming methods may be used in combination, and two or more kinds of conductors may be laminated to form a conductor layer. When a conductor layer is formed on an insulator, a seed layer is formed with a smaller thickness than the target by sputtering, vapor deposition, or electroless plating, and then the conductor is laminated to the target thickness by electrolytic plating. You may. On the surfaces of the first conductor layers 41, 42, and 43 (the outer surface opposite to the surface in contact with the substrate 35), an oxidation preventing layer such as NiAu or NiPdAu may be provided to prevent oxidation. Further, patterning or the like may be appropriately performed so that the first conductive layer 43 has a shape such as a wiring and a pad.

(5) As shown in FIG. 5B, the first main surface 33 of the substrate 35 having the first conductor layer 43 formed on the first main surface 33 is covered with an insulating material 44. The insulating material 44 fills the recess 31, but does not have to fill the recess 32. Examples of the insulating material 44 include a resin. Thereby, as described later, when the second main surface 34 of the substrate 35 is polished, the first conductive layer formed on each of the inner wall of the concave portion 31, the inner wall of the concave portion 32, and the surface of the first main surface 33 is formed. 41, 42 and 43 can be protected. In addition, when the second main surface 34 of the substrate 35 is polished and the

concave portions

31 and 32 are exposed on the second main surface 36 of the substrate 35, the insulating material 44 functions as a bonding material or an adhesive, and the waveguide structure 48 is formed. Can be prevented from separating from the substrate 35.

As shown in FIG. 5C, by polishing the second main surface 34 of the substrate 35, the exposed portions where the

concave portions

31 and 32 are exposed on the new second main surface 36 (polishing processing surface, surface obtained by polishing). EX is formed. In addition, the first conductor layers 41 and 42 formed in the

concave portions

31 and 32 are exposed on the new second main surface 36 to become the side walls 45 and the through electrodes 46 (exposed electrodes). The shapes of the side walls 45 and the through electrodes 46 are based on the shapes of the precisely formed recesses 31 and 32 according to the shapes of the

recesses

11 and 12 of the prototype 10, respectively. Thereby, highly accurate side walls and through holes can be formed in the substrate 35 made of resin.

(5) As shown in FIG. 5D, a second conductor layer 47 is formed on the second main surface 36 of the substrate 35. The method of forming the second conductor layer 47 may be the same as the method of forming the first conductor layers 41, 42, and 43, as described above. Since the dielectric constituting the substrate 35 has a region surrounded by the first conductor layer 43, the second conductor layer 47, and the side wall 45, a waveguide structure 48 similar to a waveguide can be constituted. Further, before forming the second conductor layer 47, the insulating material 44 exposed on the second main surface 36 may be roughened.

貫通 The through electrode 46 provided inside the waveguide structure 48 may constitute a mode conversion mechanism. The mode conversion mechanism is connected to a wiring layer (the redistribution layer 53 in FIG. 6C) provided outside the waveguide structure 48, and inputs an electric signal to the waveguide structure from the wiring layer, or outputs a signal from the waveguide structure. For example, an electric signal can be output to the wiring layer.

(6) As shown in FIG. 6A, patterning of the second conductor layer 47 may be performed as appropriate. Further, as described above, an oxidation preventing layer may be provided on the surface of the second conductor layer 47 (the outer surface opposite to the surface in contact with the substrate 35). The second conductor layer 47 formed on the second main surface 36 may be the same as or different from the first conductor layer 43 formed on the first main surface 33 with respect to the layer configuration, patterning, and the like. . Here, for example, the through electrode 46 serving as a mode conversion mechanism and the side wall 45 are separated via the gap 49.

As a method of forming a patterned conductor layer using a patterned resist, for example, the following two methods can be mentioned.
(1) A method in which a conductor layer is formed after a patterned resist is formed, the conductor layer laminated on the resist is removed together with the resist, and the conductor layer is left in a region where there is no resist (lift-off).
(2) After forming a patterned resist on the entire surface of the conductor layer, the material layer in a region not covered with the resist is removed by etching or the like, and if necessary, unnecessary resist is removed. Method.
The etching method can be appropriately selected from various types such as dry etching and wet etching.

封止 As shown in FIG. 6B, a sealing layer 50 made of a dielectric such as a resin may be provided on the second conductor layer 47. An opening 51 communicating with the second conductor layer 47 can be provided in the sealing layer 50. When the sealing layer 50 is made of a photosensitive material, photolithography can be used. When the sealing layer 50 is made of a non-photosensitive material, a printing method can be used.

(6) As shown in FIG. 6C, the rewiring layers 53 and 55 may be provided on the sealing layer 50, and the

vias

52 and 54 may be provided in the opening 51. In the case of the substrate 35 having passive components such as the waveguide structure 48, when the substrate 35 has a plurality of passive components mounted thereon, the substrate 35 may include a step of cutting the substrate for each passive component. Examples of the means for cutting the substrate include known processing means such as a blade dicer and a laser.

高周波 By dividing the passive component shown in FIG. 6C into individual pieces, the high-frequency passive component 100 shown in FIG. 1 can be obtained. Here, the substrate 101 in FIG. 1 corresponds to the substrate 35 in FIG. 6C, and the conductor layers 102 and 103 in FIG. 1 correspond to the first conductor layer 43 and the second conductor layer 47 in FIG. 6C, respectively. The side wall 104 in FIG. 1 corresponds to the side wall 45 in FIG. 6C, and the through electrode 105 in FIG. 1 corresponds to the through electrode 46 in FIG. 6C. The dielectric layer 106 in FIG. 1 corresponds to the insulating material 44 in FIG. 6C, and the sealing layer 107 in FIG. 1 corresponds to the sealing layer 50 in FIG. 6C. The

vias

108 and 110 and the redistribution layers 109 and 111 in FIG. 1 correspond to the

vias

52 and 54 and the redistribution layers 53 and 55 in FIG. 6C, respectively.

Although the present invention has been described based on the preferred embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present invention. Modifications include addition, substitution, omission, and other changes of the components in each embodiment. Also, the components used in two or more embodiments can be appropriately combined.

When manufacturing the high-frequency passive component 100 shown in FIG. 1, as shown in FIG. 4C, a method of manufacturing a substrate 35 in which a concave portion 31 serving as a side wall and a concave portion 32 serving as a through hole are formed, The method for forming 11 and 12 may be the same. For example, when the substrate material 30 is glass, quartz, or the like, the

concave portions

31 and 32 may be formed by femtosecond laser assisted etching or the like. In this case, by omitting the steps shown in FIGS. 3A to 4C and performing the steps shown in FIGS. 5A to 6C, the high-frequency passive component 100 shown in FIG. 1 can be manufactured.

In the high-frequency passive component according to the above-described embodiment, a plurality of components may be configured on the same substrate. Other components configured on the substrate are not limited to high frequency passive components, and may include other passive components, active components, and the like. By modularizing the components, a high-frequency module can be configured. The high-frequency module of the present embodiment is, for example, a module including the above-described high-frequency passive component. Various components necessary for the function can be incorporated in the module.

35, 101 ... substrate, 41, 42, 43 ... first conductor layer, 44 ... insulating material (dielectric layer), 45, 104 ... side wall, 46, 105 ... through electrode, 47 ... second conductor layer, 48 ... conductor Waveguide structure, 100: high-frequency passive component, 102, 103: conductor layer, 106: dielectric layer, 50, 107: sealing layer.

Claims

A substrate made of a dielectric including a waveguide region;
On at least one surface in the thickness direction of the substrate, a conductor layer that contacts the waveguide region in plan view,
A dielectric layer provided on a side crossing the thickness direction of the substrate,
With
A high-frequency passive component in which at least a part of an outer peripheral portion of the conductor layer is disposed on the dielectric layer.
The high-frequency passive component according to claim 1, wherein the surface of the dielectric layer on which the conductor layer is disposed is roughened.
(3) The high-frequency passive component according to (1) or (2), wherein a corner of an outer peripheral portion of the conductor layer is arranged on the dielectric layer.
The high-frequency passive component according to claim 1 or 2, wherein the entire outer peripheral portion of the conductor layer is disposed on the dielectric layer.
The waveguide region has a waveguide structure surrounded by a wide wall formed on both surfaces of the substrate and a side wall connected to the wide wall,
The high-frequency passive component according to claim 1, wherein the conductor layer is at least one of the wide walls.
6. The high-frequency passive component according to claim 1, wherein at least a part of the conductor layer is sealed with a resin.
A method for manufacturing a high-frequency passive component having a substrate made of a dielectric and side walls formed on the substrate,
Producing a substrate having a first main surface having a concave portion corresponding to the side wall and a second main surface opposite to the first main surface;
Providing a dielectric layer in the recess,
Polishing the second main surface of the substrate to expose the dielectric layer to the surface obtained by polishing the second main surface;
Forming the conductor layer so that an outer peripheral portion of the conductor layer is disposed on the dielectric layer;
Manufacturing method of high frequency passive components.