WO2020009145A1 - Method for producing high-frequency passive component - Google Patents

Method for producing high-frequency passive component Download PDF

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Publication number
WO2020009145A1
WO2020009145A1 PCT/JP2019/026447 JP2019026447W WO2020009145A1 WO 2020009145 A1 WO2020009145 A1 WO 2020009145A1 JP 2019026447 W JP2019026447 W JP 2019026447W WO 2020009145 A1 WO2020009145 A1 WO 2020009145A1
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Prior art keywords
substrate
main surface
concave portion
exposed
passive component
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PCT/JP2019/026447
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French (fr)
Japanese (ja)
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理 額賀
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株式会社フジクラ
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/12Hollow waveguides
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits

Definitions

  • the present invention relates to a method for manufacturing a high-frequency passive component having a waveguide structure that can be used for high-frequency communication such as millimeter waves.
  • Patent Document 1 proposes a mode converter using a post-wall waveguide (Post-wall @ Waveguide).
  • Patent Document 1 discloses a glass substrate, a quartz substrate, or the like as a substrate used for manufacturing a precise passive component.
  • glass substrates, quartz substrates, and the like are difficult to process and take time, and thus have problems in manufacturing cost and mass productivity.
  • the present invention has been made in view of the above circumstances, and provides a method of manufacturing a high-frequency passive component capable of improving manufacturing cost and mass productivity.
  • one embodiment of the present invention is a method for manufacturing a high-frequency passive component including a substrate made of a dielectric, and at least one of a side wall and a through electrode formed on the substrate.
  • At least one of the side wall and the through electrode Forming a conductive layer made, to provide a method for manufacturing a high-frequency
  • the method for manufacturing a high-frequency passive component uses femtosecond laser-assisted etching when manufacturing the mold having the concave portion corresponding to at least one of the side wall and the through electrode from glass. You may.
  • a conductor layer is formed on the first main surface having the concave portion, and the exposed portion is formed such that a part of the concave portion is exposed on the second main surface. After that, a conductor layer may be formed on the second main surface.
  • the conductive layer may be formed on the first main surface having the concave portion before the formation of the exposed portion where a part of the concave portion is exposed on the second main surface. And a conductor layer formed on the first main surface where the recess is opened may be covered with an insulating material.
  • a sidewall and a through electrode may be formed in the recess of the substrate. Forming at least one of the conductor layers, and forming the exposed portion in which a part of the concave portion is exposed to the second main surface, forming the conductor layer formed in the concave portion on the second main surface. And may be used as at least one of the side wall and the through electrode.
  • the high-frequency passive component includes a conductor layer formed on both surfaces of the substrate and a waveguide region formed by a side wall or a through electrode connected to the conductor layer. It may have a waveguide structure configured to surround it.
  • the method for manufacturing a high-frequency passive component includes the step of joining the substrate to a wiring substrate different from the substrate, forming a communication hole penetrating the substrate and the wiring substrate, A connection conductor may be formed in the hole to electrically connect a high-frequency passive component formed on the board to a wiring on the wiring board.
  • a glass master as a master
  • a metal mold is produced in a desired number from the master
  • at least one of a precise side wall and a through electrode is formed using the mold.
  • the resin substrate on which is formed can be manufactured at low cost and low cost, and is excellent in mass productivity.
  • FIG. 4 is a cross-sectional view showing a step of joining a substrate to a wiring board.
  • FIG. 4 is a cross-sectional view showing a step of joining a substrate to a wiring board.
  • FIG. 1A, FIG. 1B, and FIG. 1C sequentially show steps of producing a mold from a prototype.
  • 2A, 2B, and 2C sequentially show steps of manufacturing a substrate from a mold.
  • FIG. 3A, FIG. 3B, FIG. 3C, and FIG. 3D sequentially show steps of manufacturing a high-frequency passive component on a substrate.
  • 4A and 4B show a step of joining a substrate on which a high-frequency passive component is manufactured to another wiring substrate (a wiring substrate different from the substrate).
  • the method of manufacturing the high-frequency passive component according to the present embodiment has the following steps as schematically shown in FIGS. 1A to 3D.
  • a step of producing a prototype 10 from glass having a recess 11 corresponding to a side wall or a through electrode and a recess 12 corresponding to a through electrode (FIG. 1A).
  • a step of using the prototype 10 to fabricate a mold 20 having projections 21 and 22 corresponding to the recesses 11 and 12 of the prototype 10 from metal (FIGS. 1B and 1C).
  • the mold 20 has a first main surface 33 where the concave portions 31 and 32 corresponding to the convex portions 21 and 22 are open, and a second main surface 34 opposite to the first main surface 33.
  • Step of manufacturing substrate 35 from substrate material 30 made of resin (FIGS. 2A to 2C).
  • a step of polishing the second main surface 34 of the substrate 35 to form an exposed portion EX in which a part of the concave portions 31 and 32 of the substrate 35 is exposed to the second main surface 36 (FIGS. 3A to 3D).
  • the substrate 35 may be provided with side walls or through electrodes 45 and 46.
  • the prototype 10 has a first main surface 13 in which the concave portions 11 and 12 are open, and a second main surface 14 opposite to the first main surface 13.
  • the recesses 11 and 12 do not reach the second main surface 14, and the bottoms of the recesses 11 and 12 are closed.
  • the prototype 10 has the same shape as the substrate 35, and is used to transfer the shape of the prototype 10 to the mold 20, and further to transfer the shape of the mold 20 to the substrate material 30. That is, the prototype 10 is not a mold 20 for directly molding the substrate 35 but a master mold that is a base of the mold 20.
  • ⁇ ⁇ Glass is an example of a dielectric material constituting the prototype 10.
  • the glass include multi-component glass, quartz glass (silica glass), and silicate glass.
  • quartz glass silicon glass
  • silicate glass As a material similar to glass, inorganic materials such as sapphire, synthetic quartz, natural quartz, and semiconductors can be used.
  • the dielectric substrate constituting the prototype 10 may be, for example, a wafer-shaped large-area substrate. 1A to 1C, the concave portions 11 and 12 of the prototype 10 are displayed downward, but the prototype 10 may be arranged in a direction different from the downward direction.
  • a punching machine such as a drill, a laser, an etching and the like can be mentioned.
  • a material such as glass is locally modified by laser condensing irradiation, and a portion having high solubility due to the modification is selectively removed by wet etching.
  • femtosecond laser-assisted etching enables processing with high positional accuracy and high processing accuracy.
  • the femtosecond laser-assisted etching referred to here means that, first, an ultrashort pulse laser having a pulse width of 10 ps or less is condensed and scanned to form a modified portion including a crack or a structurally modified portion along the condensed portion. Next, a processing method in which the modified portion is selectively etched by etching to provide the concave portions 11 and 12 and the like. Not only can micropores having a high aspect ratio (ratio of depth to diameter) be formed, but also recesses of any shape including a tapered shape, a stepped shape, and the like can be processed.
  • the tapered shape may have a smaller diameter or shape from the first main surface of the material to the second main surface or inside, or conversely, may have a larger diameter or shape.
  • a metal is adhered to the concave portions 11 and 12 and the first main surface 13 of the prototype 10 by electroforming or plating using a metal such as Ni, for example, to form the mold 20.
  • the protrusions 21 and 22 are made of metal deposited on the recesses 11 and 12 of the prototype 10, and the base 23 is made of metal deposited on the first main surface 13 of the prototype 10.
  • the mold 20 in which the protrusions 21 and 22 project on one surface of the base 23 is obtained. Since the material constituting the prototype 10 is excellent in durability, the process of manufacturing the mold 20 from the prototype 10 using the same prototype 10 can be repeated a plurality of times.
  • a substrate material 30 made of resin is prepared, and as shown in FIG. 2B, the substrate material 30 is overlaid on the projections 21 and 22 of the mold 20.
  • Substrate material 30 may be a flat film, sheet, or the like.
  • Preferred resins for the substrate material 30 include cycloolefin copolymer (COC), fluororesin, liquid crystal polymer (LCP) and the like.
  • COC cycloolefin copolymer
  • LCP liquid crystal polymer
  • the resin constituting the substrate material 30 is a thermoplastic resin
  • the resin is softened by heating, the shape of the mold 20 is transferred to the substrate material 30 by the hot embossing method, and the concave portions having the shapes corresponding to the convex portions 21 and 22 are formed. 31, 32 can be formed.
  • the substrate material 30 is a curable resin such as a thermosetting resin or a photo-curable resin
  • the substrate material 30 is applied to the mold 20 in an uncured state having fluidity such as a liquid, and is superimposed on the mold 20.
  • the concave portions 31 and 32 having shapes corresponding to the convex portions 21 and 22 can be formed.
  • a substrate 35 having the concave portions 31 and 32 formed in the first main surface 33 in contact with the base 23 of the mold 20 is obtained.
  • the first main surface 33 is a surface where the concave portions 31 and 32 are opened.
  • the second main surface 34 is a surface opposite to the first main surface 33.
  • the recesses 31 and 32 do not reach the second main surface 34, and the bottoms of the recesses 31 and 32 are closed. Since the material constituting the mold 20 is excellent in durability, the step of forming the substrate 35 having the concave portions 31 and 32 using the same mold 20 can be repeated a plurality of times.
  • the first conductor layers 41, 42, and 43 are provided on each of the concave portion 31, the concave portion 32, and the first main surface 33 with respect to the substrate 35 having the concave portions 31 and 32 opened on the first main surface 33. Is formed. Specifically, among these conductor layers, the first conductor layer 41 is formed on the inner wall of the recess 31, the first conductor layer 42 is formed on the inner wall of the recess 32, and the first conductor layer 43 is formed on the first wall. It is formed on the main surface 33.
  • the first conductor layers 41, 42, 43 are formed so as to conform to the respective surface shapes (inner wall, bottom wall, surface) of the concave portion 31, the concave portion 32, and the first main surface 33.
  • the first conductor layers 41 and formed on the inner walls of the recesses 31 and 32 are not exposed on the second main surface of the substrate.
  • the first conductor layer 42 forms a blind via.
  • the first conductor layer 41 forms a blind via when the concave portion 31 has a hole shape.
  • the first conductor layer 41 forms a continuous side wall 45 when the concave portion 31 has a continuous groove shape along the waveguide structure 48 shown in FIG. 3D.
  • the range in which the groove-shaped concave portion 31 or the side wall 45 is continuous is not particularly limited as long as it is at least a part in the longitudinal direction or the width direction of the waveguide structure 48, and may be over the entire circumference of the waveguide structure 48.
  • a method of forming a conductor layer such as the first conductor layers 41, 42, and 43
  • a sputtering method a vapor deposition method, an electroless plating method, an electrolytic plating method, and a method of applying a conductor paste
  • Method Two or more kinds of conductor materials or film forming methods may be used in combination, and two or more kinds of conductors may be laminated to form a conductor layer.
  • a seed layer is formed with a smaller thickness than the target by sputtering, vapor deposition, or electroless plating, and then the conductor is laminated to the target thickness by electrolytic plating. You may.
  • an oxidation preventing layer such as NiAu or NiPdAu may be provided to prevent oxidation. Further, patterning or the like may be appropriately performed so that the first conductive layer 43 has a shape such as a wiring and a pad.
  • the first main surface 33 of the substrate 35 having the first conductor layer 43 formed on the first main surface 33 is covered with an insulating material 44.
  • the insulating material 44 may be filled in the recesses 31 and 32.
  • Examples of the insulating material 44 include a resin.
  • the second main surface 34 of the substrate 35 is polished, and when the concave portions 31 and 32 are exposed on the second main surface 36 of the substrate 35, the insulating material 44 is bonded to the bonding material.
  • it functions as an adhesive and can prevent the waveguide structure 48 from separating from the substrate 35.
  • the second main surface 34 of the substrate 35 by polishing the second main surface 34 of the substrate 35, a part of the recesses 31 and 32 is exposed to a new second main surface 36 (polishing processing surface, surface obtained by polishing).
  • the exposed portion EX is formed.
  • the first conductor layers 41 and 42 formed in the concave portions 31 and 32 are exposed on the new second main surface 36 to become the side walls or the through electrodes 45 and the through electrodes 46 (exposed electrodes).
  • the shapes of the side wall or through electrode 45 and the through electrode 46 are based on the shapes of the precisely formed recesses 31 and 32 according to the shapes of the recesses 11 and 12 of the prototype 10, respectively. Thereby, highly accurate side walls and through holes can be formed in the substrate 35 made of resin.
  • a second conductor layer 47 is formed on the second main surface 36 of the substrate 35.
  • the method of forming the second conductor layer 47 may be the same as the method of forming the first conductor layers 41, 42, and 43, as described above. Further, as described above, an oxidation preventing layer may be provided on the surface of the second conductor layer 47 (the outer surface opposite to the surface in contact with the substrate 35), and the second conductor layer 47 may be appropriately patterned. Good.
  • the second conductor layer 47 formed on the second main surface 36 may be the same as or different from the first conductor layer 43 formed on the first main surface 33 with respect to the layer configuration, patterning, and the like. .
  • a method of forming a patterned conductor layer using a patterned resist for example, the following two methods can be mentioned. (1) A method in which a conductor layer is formed after a patterned resist is formed, the conductor layer laminated on the resist is removed together with the resist, and the conductor layer is left in a region where there is no resist (lift-off). (2) After forming a patterned resist on the entire surface of the conductor layer, the material layer in a region not covered with the resist is removed by etching or the like, and if necessary, unnecessary resist is removed. Method.
  • the etching method can be appropriately selected from various types such as dry etching and wet etching.
  • the side wall or the through electrode 45 and the through electrode 46 formed on the substrate 35 may constitute a passive component (passive device) such as a waveguide, a filter, a diplexer, a directional coupler, and a distributor.
  • a passive component passive device
  • a waveguide structure 48 similar to a waveguide may be constituted. it can.
  • This waveguide structure can be used, for example, as a high-frequency device through which a high-frequency signal (electromagnetic wave) such as a millimeter wave is propagated.
  • the frequency is not particularly limited, for example, 30 to 300 GHz, 60 to 80 GHz and the like can be mentioned.
  • a post wall waveguide can be mentioned.
  • a wide wall grounded by connecting to a ground potential may be provided on both main surfaces of the substrate constituting the post wall waveguide.
  • the through electrodes can constitute a wall surrounding the waveguide structure by arranging a large number of through electrodes, for example.
  • Examples of the wall portion formed of the through electrode include a narrow wall facing the width direction of the waveguide structure, a short wall provided at an end in the longitudinal direction, and other side walls.
  • the shape of the through-electrode forming the wall is not limited to the cylindrical shape as shown in FIGS. 3A to 3D, but may be a cylindrical shape or the like.
  • the arrangement of the through electrodes can be variously configured in accordance with the function of the passive component, and the like. A portion in which the through electrodes are arranged at equal intervals, a portion in which the intervals between the through electrodes are uneven, and A portion that is not arranged over a section may be provided.
  • the through electrode 46 provided inside the waveguide structure 48 may constitute a mode conversion mechanism.
  • the mode conversion mechanism is connected to a wiring layer (not shown) provided outside the waveguide structure 48, and inputs an electric signal from the wiring layer to the waveguide structure, or inputs a signal from the waveguide structure to the wiring layer. To output electrical signals.
  • a singulation process of cutting the substrate for each passive component is performed. May have.
  • a device for cutting a substrate a known processing device using a blade dicer, a laser, or the like can be given.
  • FIGS. 4A and 4B show an example of a process of joining the passive component 40 in which the waveguide structure 48 is formed on the substrate 35 to the wiring substrate 50.
  • the wiring board 50 has a wiring layer 52 on at least one surface of an insulating base material 51.
  • the second conductor layer 47 of the passive component 40 is overlaid on the side facing the wiring board 50.
  • the wiring layer 52 on the side facing the passive component 40 is provided with an insulating layer 53 for protecting the wiring layer 52 and the like.
  • the joining method between the passive component 40 and the wiring board 50 is not particularly limited, and examples thereof include an adhesive, soldering, and a mechanical structure such as fitting or engaging.
  • connection conductor 54 may be formed in the communication hole 55.
  • the waveguide structure 48 formed on the substrate 35 and the wiring layer 52 of the wiring substrate 50 can be electrically connected.
  • the connection conductor 54 and the communication hole 55 may penetrate the second conductor layer 47 and may be arranged between the side walls 45 or on the insulating material 44 inside the through electrode 45.
  • a device for forming the communication hole 55 is not particularly limited, and examples thereof include a drilling machine such as a drill, a laser, and the like.
  • the method of providing the through electrode in the through hole is not limited to the method of forming the conductor layer in the concave portion before polishing the second main surface of the substrate as in the above-described embodiment.
  • the conductor layer may be formed in the through hole.
  • a plurality of components may be configured on the same substrate.
  • Other components configured on the substrate are not limited to high frequency passive components, and may include other passive components, active components, and the like.
  • a high-frequency module can be configured.
  • the high-frequency module of the present embodiment is, for example, a module including the above-described high-frequency passive component.
  • Various components necessary for the function can be incorporated in the module.
  • Reference numerals 10 prototype, 11, 12: prototype recess, 20: mold, 21, 22, ... projection, 30: substrate material, 31, 32: recess, 35: substrate, 40: passive component, 41, 42, 43 ...

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Abstract

This production method is for producing a high-frequency passive component that includes: a substrate comprising a dielectric material; and at least one of a through electrode and a side wall formed on the substrate. In the production method, a prototype having a recess that corresponds to at least one of a side wall and a through electrode is produced from glass, a mold that has a protrusion corresponding to the recess is produced from a metal using the prototype, a substrate comprising a first main surface on which a recess corresponding to the protrusion opens and a second main surface on the opposite side from the first main surface is produced from a resin using the mold, the second main surface of the substrate is polished, part of the recess forms an exposed section that is exposed on the second main surface, and a conductive layer serving as at least one of a side wall and a through electrode is formed on the recess opening on the first main surface of the substrate or on the exposed section exposed on the second main surface of the substrate.

Description

高周波受動部品の製造方法Manufacturing method of high frequency passive components
 本発明は、ミリ波等の高周波通信に利用可能な導波路構造を有する高周波受動部品の製造方法に関する。
 本願は、2018年7月6日に日本に出願された特願2018-129367号に基づき優先権を主張し、その内容をここに援用する。
The present invention relates to a method for manufacturing a high-frequency passive component having a waveguide structure that can be used for high-frequency communication such as millimeter waves.
Priority is claimed on Japanese Patent Application No. 2018-129367, filed on July 6, 2018, the content of which is incorporated herein by reference.
 近年、ミリ波帯を利用した数G[bps]の高速大容量通信が提案され、その一部が実現されつつある。小型で安価なミリ波通信モジュールを実現する形態として、例えば、特許文献1には、ポスト壁導波路(Post-wall Waveguide)を利用したモード変換器が提案されている。 In recent years, high-speed, large-capacity communication of several gigabits per second (bps) using the millimeter wave band has been proposed, and a part thereof is being realized. As a mode for realizing a small and inexpensive millimeter-wave communication module, for example, Patent Document 1 proposes a mode converter using a post-wall waveguide (Post-wall @ Waveguide).
日本国特開2014-158243号公報JP 2014-158243 A
 特許文献1において、精密な受動部品を作製するために用いられる基板としては、ガラス基板、石英基板等が示されている。しかし、ガラス基板、石英基板等は加工が難しく、時間が掛かる等、製造コストおよび量産性の課題があった。 Patent Document 1 discloses a glass substrate, a quartz substrate, or the like as a substrate used for manufacturing a precise passive component. However, glass substrates, quartz substrates, and the like are difficult to process and take time, and thus have problems in manufacturing cost and mass productivity.
 本発明は、上記事情に鑑みてなされたものであり、製造コストおよび量産性を改善することが可能な高周波受動部品の製造方法を提供する。 The present invention has been made in view of the above circumstances, and provides a method of manufacturing a high-frequency passive component capable of improving manufacturing cost and mass productivity.
 前記課題を解決するため、本発明の一態様は、誘電体からなる基板と、前記基板に形成された側壁および貫通電極のうち少なくとも一方とを有する高周波受動部品の製造方法であって、側壁および貫通電極のうち少なくとも一方に対応する凹部を有する原型をガラスから作製し、前記原型を用いて、前記凹部に対応する凸部を有する型を金属から作製し、前記型を用いて、前記凸部に対応する凹部が開口する第1主面と、前記第1主面とは反対側の第2主面とを有する基板を樹脂から作製し、前記基板の前記第2主面を研磨して、前記凹部の一部が前記第2主面に露出した露出部を形成し、前記基板の前記第1主面に開口する前記凹部、または、前記基板の前記第2主面に露出した前記露出部に、側壁および貫通電極のうち少なくとも一方となる導体層を形成する、高周波受動部品の製造方法を提供する。 In order to solve the above-described problem, one embodiment of the present invention is a method for manufacturing a high-frequency passive component including a substrate made of a dielectric, and at least one of a side wall and a through electrode formed on the substrate. Producing a prototype having a concave portion corresponding to at least one of the through electrodes from glass, using the prototype, producing a mold having a convex portion corresponding to the concave portion from metal, and using the mold, the convex portion A substrate having a first main surface in which a concave portion corresponding to the opening is provided and a second main surface opposite to the first main surface is produced from a resin, and the second main surface of the substrate is polished, A part of the concave part forms an exposed part exposed on the second main surface, and the concave part opened on the first main surface of the substrate, or the exposed part exposed on the second main surface of the substrate At least one of the side wall and the through electrode Forming a conductive layer made, to provide a method for manufacturing a high-frequency passive components.
 本発明の一態様に係る高周波受動部品の製造方法は、前記側壁および前記貫通電極のうち少なくとも一方に対応する前記凹部を有する前記原型をガラスから作製する際に、フェムト秒レーザアシストエッチングを使用してもよい。 The method for manufacturing a high-frequency passive component according to one embodiment of the present invention uses femtosecond laser-assisted etching when manufacturing the mold having the concave portion corresponding to at least one of the side wall and the through electrode from glass. You may.
 本発明の一態様に係る高周波受動部品の製造方法は、前記凹部を有する前記第1主面に導体層を形成し、前記凹部の一部が前記第2主面に露出する前記露出部を形成した後に、前記第2主面に導体層を形成してもよい。
 本発明の一態様に係る高周波受動部品の製造方法は、前記凹部の一部が前記第2主面に露出する前記露出部の形成に先立って、前記凹部を有する前記第1主面に導体層を形成し、前記凹部が開口する前記第1主面に形成された導体層を絶縁材で被覆してもよい。
In the method for manufacturing a high-frequency passive component according to one aspect of the present invention, a conductor layer is formed on the first main surface having the concave portion, and the exposed portion is formed such that a part of the concave portion is exposed on the second main surface. After that, a conductor layer may be formed on the second main surface.
In the method for manufacturing a high-frequency passive component according to one aspect of the present invention, the conductive layer may be formed on the first main surface having the concave portion before the formation of the exposed portion where a part of the concave portion is exposed on the second main surface. And a conductor layer formed on the first main surface where the recess is opened may be covered with an insulating material.
 本発明の一態様に係る高周波受動部品の製造方法は、前記凹部の一部が前記第2主面に露出する前記露出部の形成に先立って、前記基板の前記凹部に、側壁および貫通電極のうち少なくとも一方となる導体層を形成し、前記凹部の一部が前記第2主面に露出した前記露出部を形成する際において、前記凹部に形成された前記導体層を、前記第2主面に露出させて、側壁および貫通電極のうち少なくとも一方としてもよい。
 本発明の一態様に係る高周波受動部品の製造方法は、前記高周波受動部品が、前記基板の両面に形成された導体層と、前記導体層に接続された側壁または貫通電極により導波領域とを囲むように構成される導波路構造を有してもよい。
In the method of manufacturing a high-frequency passive component according to one aspect of the present invention, prior to forming the exposed portion in which a part of the recess is exposed to the second main surface, a sidewall and a through electrode may be formed in the recess of the substrate. Forming at least one of the conductor layers, and forming the exposed portion in which a part of the concave portion is exposed to the second main surface, forming the conductor layer formed in the concave portion on the second main surface. And may be used as at least one of the side wall and the through electrode.
In the method for manufacturing a high-frequency passive component according to one aspect of the present invention, the high-frequency passive component includes a conductor layer formed on both surfaces of the substrate and a waveguide region formed by a side wall or a through electrode connected to the conductor layer. It may have a waveguide structure configured to surround it.
 本発明の一態様に係る高周波受動部品の製造方法は、前記基板を、前記基板とは異なる配線基板上に接合し、前記基板と、前記配線基板とを貫通する連通孔を形成し、前記連通孔に接続導体を形成して、前記基板に形成される高周波受動部品と前記配線基板の配線とを電気的に接続してもよい。 The method for manufacturing a high-frequency passive component according to one aspect of the present invention includes the step of joining the substrate to a wiring substrate different from the substrate, forming a communication hole penetrating the substrate and the wiring substrate, A connection conductor may be formed in the hole to electrically connect a high-frequency passive component formed on the board to a wiring on the wiring board.
 本発明の一態様によれば、ガラスの原型をマスターとして精密な加工が可能であり、マスターから所望の数量で金属の型を作製し、型を用いて精密な側壁および貫通電極のうち少なくとも一方が形成された樹脂基板を低コストで安価に製造することができ、量産性に優れる。 According to one embodiment of the present invention, precise processing is possible using a glass master as a master, a metal mold is produced in a desired number from the master, and at least one of a precise side wall and a through electrode is formed using the mold. The resin substrate on which is formed can be manufactured at low cost and low cost, and is excellent in mass productivity.
原型から型を作製する工程を示す断面図である。It is sectional drawing which shows the process of producing a type | mold from a prototype. 原型から型を作製する工程を示す断面図である。It is sectional drawing which shows the process of producing a type | mold from a prototype. 原型から型を作製する工程を示す断面図である。It is sectional drawing which shows the process of producing a type | mold from a prototype. 型から基板を作製する工程を示す断面図である。It is sectional drawing which shows the process of producing a board | substrate from a type | mold. 型から基板を作製する工程を示す断面図である。It is sectional drawing which shows the process of producing a board | substrate from a type | mold. 型から基板を作製する工程を示す断面図である。It is sectional drawing which shows the process of producing a board | substrate from a type | mold. 高周波受動部品を作製する工程を示す断面図である。It is sectional drawing which shows the process of manufacturing a high frequency passive component. 高周波受動部品を作製する工程を示す断面図である。It is sectional drawing which shows the process of manufacturing a high frequency passive component. 高周波受動部品を作製する工程を示す断面図である。It is sectional drawing which shows the process of manufacturing a high frequency passive component. 高周波受動部品を作製する工程を示す断面図である。It is sectional drawing which shows the process of manufacturing a high frequency passive component. 基板を配線基板と接合する工程を示す断面図である。FIG. 4 is a cross-sectional view showing a step of joining a substrate to a wiring board. 基板を配線基板と接合する工程を示す断面図である。FIG. 4 is a cross-sectional view showing a step of joining a substrate to a wiring board.
 以下、好適な実施形態に基づき、図面を参照して本発明を説明する。図1A、図1B、及び図1Cは、原型から型を作製する工程を順に示す。図2A、図2B、及び図2Cは、型から基板を作製する工程を順に示す。図3A、図3B、図3C、及び図3Dは、基板に高周波受動部品を作製する工程を順に示す。図4A及び図4Bは、高周波受動部品が作製された基板を他の配線基板(基板とは異なる配線基板)と接合する工程を示す。 Hereinafter, the present invention will be described based on preferred embodiments with reference to the drawings. FIG. 1A, FIG. 1B, and FIG. 1C sequentially show steps of producing a mold from a prototype. 2A, 2B, and 2C sequentially show steps of manufacturing a substrate from a mold. FIG. 3A, FIG. 3B, FIG. 3C, and FIG. 3D sequentially show steps of manufacturing a high-frequency passive component on a substrate. 4A and 4B show a step of joining a substrate on which a high-frequency passive component is manufactured to another wiring substrate (a wiring substrate different from the substrate).
 本実施形態による高周波受動部品の製造方法は、概略として、図1A~図3Dに示すように、以下の工程を有する。
・側壁または貫通電極に対応する凹部11および貫通電極に対応する凹部12を有する原型10をガラスから作製する工程(図1A)。
・原型10を用いて、原型10の凹部11,12に対応する凸部21,22を有する型20を金属から作製する工程(図1B、図1C)。
・型20を用いて、型20の凸部21,22に対応する凹部31,32が開口する第1主面33と、第1主面33とは反対側の第2主面34とを有する基板35を樹脂からなる基板材料30から作製する工程(図2A~図2C)。
・基板35の第2主面34を研磨して、基板35の凹部31,32の一部が第2主面36に露出した露出部EXを形成する工程(図3A~図3D)。
 基板35には、側壁または貫通電極45、貫通電極46を設けることができる。
The method of manufacturing the high-frequency passive component according to the present embodiment has the following steps as schematically shown in FIGS. 1A to 3D.
A step of producing a prototype 10 from glass having a recess 11 corresponding to a side wall or a through electrode and a recess 12 corresponding to a through electrode (FIG. 1A).
A step of using the prototype 10 to fabricate a mold 20 having projections 21 and 22 corresponding to the recesses 11 and 12 of the prototype 10 from metal (FIGS. 1B and 1C).
Using the mold 20, the mold 20 has a first main surface 33 where the concave portions 31 and 32 corresponding to the convex portions 21 and 22 are open, and a second main surface 34 opposite to the first main surface 33. Step of manufacturing substrate 35 from substrate material 30 made of resin (FIGS. 2A to 2C).
A step of polishing the second main surface 34 of the substrate 35 to form an exposed portion EX in which a part of the concave portions 31 and 32 of the substrate 35 is exposed to the second main surface 36 (FIGS. 3A to 3D).
The substrate 35 may be provided with side walls or through electrodes 45 and 46.
 図1Aに示すように、原型10は、凹部11,12が開口した第1主面13と、この第1主面13とは反対側にある第2主面14とを有する。凹部11,12は第2主面14に到達せず、凹部11,12の底部が閉鎖されている。本実施形態で原型10とは、基板35と同様な形状を有し、原型10の形状を型20に転写し、さらに型20の形状を基板材料30に転写するために用いられる。つまり、原型10は、直接基板35を成形するための型20ではなく、型20の元となるマスター型である。 A As shown in FIG. 1A, the prototype 10 has a first main surface 13 in which the concave portions 11 and 12 are open, and a second main surface 14 opposite to the first main surface 13. The recesses 11 and 12 do not reach the second main surface 14, and the bottoms of the recesses 11 and 12 are closed. In the present embodiment, the prototype 10 has the same shape as the substrate 35, and is used to transfer the shape of the prototype 10 to the mold 20, and further to transfer the shape of the mold 20 to the substrate material 30. That is, the prototype 10 is not a mold 20 for directly molding the substrate 35 but a master mold that is a base of the mold 20.
 原型10を構成する誘電体としては、ガラスが挙げられる。ガラスとしては、多成分ガラス、石英ガラス(シリカガラス)、ケイ酸塩ガラス等が挙げられる。ガラスと同様な材料として、サファイア、合成石英、天然石英、半導体等の無機材料を採用することもできる。原型10を構成する誘電体基板は、例えば、ウエハ状をした大面積の基板であってもよい。図1A~図1Cでは原型10の凹部11,12を下向きに表示しているが、下向きとは異なる向きに原型10を配置してもよい。 誘 電 Glass is an example of a dielectric material constituting the prototype 10. Examples of the glass include multi-component glass, quartz glass (silica glass), and silicate glass. As a material similar to glass, inorganic materials such as sapphire, synthetic quartz, natural quartz, and semiconductors can be used. The dielectric substrate constituting the prototype 10 may be, for example, a wafer-shaped large-area substrate. 1A to 1C, the concave portions 11 and 12 of the prototype 10 are displayed downward, but the prototype 10 may be arranged in a direction different from the downward direction.
 原型10に凹部11,12を形成する方法としては、ドリル等の穿孔機械、レーザ、エッチング等が挙げられる。例えば、レーザの集光照射により、ガラス等の材料を局所的に改質した後、改質により溶解性が高くなった部分をウェットエッチングで選択的に除去する方法が挙げられる。例えば、フェムト秒レーザアシストエッチングにより、位置精度および加工精度の高い加工が可能となる。ここでいうフェムト秒レーザアシストエッチングとは、第一に、パルス幅10ps以下の超短パルスレーザを集光走査させることで集光部に沿って、クラックあるいは構造変性部からなる改質部を設け、次いで、エッチングによって改質部を選択的にエッチングし凹部11,12などを設ける加工法を指す。アスペクト比(径に対する深さの比率)が高い微細孔を形成できるだけでなく、テーパ形状、段差形状等を含む任意形状の凹部が加工できる。テーパ形状は、材料の第1主面から第2主面または内部に向けて、径または形状が小さくなってもよく、逆に、径または形状が大きくなってもよい。 方法 As a method of forming the concave portions 11 and 12 in the prototype 10, a punching machine such as a drill, a laser, an etching and the like can be mentioned. For example, there is a method in which a material such as glass is locally modified by laser condensing irradiation, and a portion having high solubility due to the modification is selectively removed by wet etching. For example, femtosecond laser-assisted etching enables processing with high positional accuracy and high processing accuracy. The femtosecond laser-assisted etching referred to here means that, first, an ultrashort pulse laser having a pulse width of 10 ps or less is condensed and scanned to form a modified portion including a crack or a structurally modified portion along the condensed portion. Next, a processing method in which the modified portion is selectively etched by etching to provide the concave portions 11 and 12 and the like. Not only can micropores having a high aspect ratio (ratio of depth to diameter) be formed, but also recesses of any shape including a tapered shape, a stepped shape, and the like can be processed. The tapered shape may have a smaller diameter or shape from the first main surface of the material to the second main surface or inside, or conversely, may have a larger diameter or shape.
 図1Bに示すように、例えば、Ni等の金属を用いた電鋳、メッキ等により、原型10の凹部11,12と第1主面13に金属を付着させ、型20を形成する。原型10の凹部11,12に堆積した金属から凸部21,22が構成され、原型10の第1主面13に堆積した金属から基部23が構成される。原型10と型20とを剥離することにより、図1Cに示すように、基部23の片面に凸部21,22が突出して形成された型20が得られる。原型10を構成する材料は耐久性に優れるため、同一の原型10を用いて、原型10から型20を作製する工程を複数回繰り返して行うことができる。 (1) As shown in FIG. 1B, a metal is adhered to the concave portions 11 and 12 and the first main surface 13 of the prototype 10 by electroforming or plating using a metal such as Ni, for example, to form the mold 20. The protrusions 21 and 22 are made of metal deposited on the recesses 11 and 12 of the prototype 10, and the base 23 is made of metal deposited on the first main surface 13 of the prototype 10. By peeling the master 10 and the mold 20, as shown in FIG. 1C, the mold 20 in which the protrusions 21 and 22 project on one surface of the base 23 is obtained. Since the material constituting the prototype 10 is excellent in durability, the process of manufacturing the mold 20 from the prototype 10 using the same prototype 10 can be repeated a plurality of times.
 図2Aに示すように、樹脂からなる基板材料30を準備し、図2Bに示すように、型20の凸部21,22に基板材料30を重ね合わせる。基板材料30は、平坦なフィルム、シート等でもよい。基板材料30として好ましい樹脂としては、シクロオレフィンコポリマー(COC)、フッ素樹脂、液晶ポリマー(LCP)等が挙げられる。図2A~図2Cでは型20の凸部21,22を上向きに表示しているが、上向きとは異なる向きに型20を配置してもよい。 2) As shown in FIG. 2A, a substrate material 30 made of resin is prepared, and as shown in FIG. 2B, the substrate material 30 is overlaid on the projections 21 and 22 of the mold 20. Substrate material 30 may be a flat film, sheet, or the like. Preferred resins for the substrate material 30 include cycloolefin copolymer (COC), fluororesin, liquid crystal polymer (LCP) and the like. 2A to 2C, the protrusions 21 and 22 of the mold 20 are displayed upward, but the mold 20 may be arranged in a different direction from the upward.
 基板材料30を構成する樹脂が熱可塑性樹脂である場合、加熱により樹脂を軟化させ、ホットエンボス法により、型20の形状を基板材料30に転写させ、凸部21,22に対応する形状の凹部31,32を形成することができる。基板材料30が熱硬化性樹脂、光硬化性樹脂等の硬化性樹脂である場合は、液状などの流動性を有する未硬化の状態で基板材料30を型20に塗布し、型20と重ね合わせたまま樹脂を硬化させることで、凸部21,22に対応する形状の凹部31,32を形成することができる。 When the resin constituting the substrate material 30 is a thermoplastic resin, the resin is softened by heating, the shape of the mold 20 is transferred to the substrate material 30 by the hot embossing method, and the concave portions having the shapes corresponding to the convex portions 21 and 22 are formed. 31, 32 can be formed. When the substrate material 30 is a curable resin such as a thermosetting resin or a photo-curable resin, the substrate material 30 is applied to the mold 20 in an uncured state having fluidity such as a liquid, and is superimposed on the mold 20. By curing the resin as it is, the concave portions 31 and 32 having shapes corresponding to the convex portions 21 and 22 can be formed.
 型20と基板材料30とを剥離することにより、図2Cに示すように、型20の基部23に接した第1主面33に凹部31,32が形成された基板35が得られる。第1主面33は、凹部31,32が開口した面である。また、第2主面34は、第1主面33とは反対側の面である。凹部31,32は第2主面34に到達せず、凹部31,32の底部が閉鎖されている。型20を構成する材料は耐久性に優れるため、同一の型20を用いて、凹部31,32を有する基板35を成形する工程を複数回繰り返して行うことができる。 By peeling off the mold 20 and the substrate material 30, as shown in FIG. 2C, a substrate 35 having the concave portions 31 and 32 formed in the first main surface 33 in contact with the base 23 of the mold 20 is obtained. The first main surface 33 is a surface where the concave portions 31 and 32 are opened. The second main surface 34 is a surface opposite to the first main surface 33. The recesses 31 and 32 do not reach the second main surface 34, and the bottoms of the recesses 31 and 32 are closed. Since the material constituting the mold 20 is excellent in durability, the step of forming the substrate 35 having the concave portions 31 and 32 using the same mold 20 can be repeated a plurality of times.
 図3Aに示すように、第1主面33に凹部31,32が開口した基板35に対して、凹部31、凹部32、及び第1主面33の各々に第1導体層41,42,43が形成される。具体的に、これら導体層のうち、第1導体層41は凹部31の内壁に形成されており、第1導体層42は凹部32の内壁に形成されており、第1導体層43は第1主面33に形成されている。この構造においては、第1導体層41、42、43は、凹部31、凹部32、及び第1主面33の各々の表面形状(内壁、底壁、表面)に沿うように、形成される。凹部31,32の内壁に各々形成された第1導体層41,42は、基板35の第2主面34に露出していない。第1導体層42はブラインドビアを構成している。第1導体層41は凹部31が穴状の場合はブラインドビアを構成している。第1導体層41は、凹部31が図3Dに示す導波路構造48に沿って連続した溝状の場合は、連続した側壁45を構成する。溝状の凹部31または側壁45が連続する範囲は、導波路構造48の長手方向または幅方向の少なくとも一部であれば特に限定されず、導波路構造48の全周にわたってもよい。 As shown in FIG. 3A, the first conductor layers 41, 42, and 43 are provided on each of the concave portion 31, the concave portion 32, and the first main surface 33 with respect to the substrate 35 having the concave portions 31 and 32 opened on the first main surface 33. Is formed. Specifically, among these conductor layers, the first conductor layer 41 is formed on the inner wall of the recess 31, the first conductor layer 42 is formed on the inner wall of the recess 32, and the first conductor layer 43 is formed on the first wall. It is formed on the main surface 33. In this structure, the first conductor layers 41, 42, 43 are formed so as to conform to the respective surface shapes (inner wall, bottom wall, surface) of the concave portion 31, the concave portion 32, and the first main surface 33. The first conductor layers 41 and formed on the inner walls of the recesses 31 and 32 are not exposed on the second main surface of the substrate. The first conductor layer 42 forms a blind via. The first conductor layer 41 forms a blind via when the concave portion 31 has a hole shape. The first conductor layer 41 forms a continuous side wall 45 when the concave portion 31 has a continuous groove shape along the waveguide structure 48 shown in FIG. 3D. The range in which the groove-shaped concave portion 31 or the side wall 45 is continuous is not particularly limited as long as it is at least a part in the longitudinal direction or the width direction of the waveguide structure 48, and may be over the entire circumference of the waveguide structure 48.
 第1導体層41,42,43のような導体層を形成する方法としては、スパッタ法、蒸着法、無電解メッキ法、電解メッキ法、導体ペーストの塗布法などの1種または2種以上の方法が挙げられる。2種以上の導体材料または成膜方法を併用してもよく、2種以上の導体を積層して導体層を構成してもよい。絶縁体上に導体層を形成する場合には、スパッタ法、蒸着法、無電解メッキ法により目標より薄い膜厚でシード層を形成した後、電解メッキ法により目標の膜厚まで導体を積層してもよい。第1導体層41,42,43の表面(基板35に接する面とは反対側の外面)には、酸化防止のため、NiAu,NiPdAu等の酸化防止層を設けてもよい。また、第1導体層43が配線、パッド等の形状を有するようにパターニング等を適宜行ってもよい。 As a method of forming a conductor layer such as the first conductor layers 41, 42, and 43, one or two or more of a sputtering method, a vapor deposition method, an electroless plating method, an electrolytic plating method, and a method of applying a conductor paste are used. Method. Two or more kinds of conductor materials or film forming methods may be used in combination, and two or more kinds of conductors may be laminated to form a conductor layer. When a conductor layer is formed on an insulator, a seed layer is formed with a smaller thickness than the target by sputtering, vapor deposition, or electroless plating, and then the conductor is laminated to the target thickness by electrolytic plating. You may. On the surfaces of the first conductor layers 41, 42, and 43 (the outer surface opposite to the surface in contact with the substrate 35), an oxidation preventing layer such as NiAu or NiPdAu may be provided to prevent oxidation. Further, patterning or the like may be appropriately performed so that the first conductive layer 43 has a shape such as a wiring and a pad.
 図3Bに示すように、第1主面33に第1導体層43が形成された基板35の第1主面33を、絶縁材44で被覆する。絶縁材44は、凹部31,32内に充填されてもよい。絶縁材44としては、例えば、樹脂が挙げられる。これにより、後述するように、基板35の第2主面34を研磨する際に、凹部31の内壁、凹部32の内壁、及び第1主面33の表面の各々に形成された第1導体層41,42,43を保護することができる。また、第1導体層41が側壁となる場合、基板35の第2主面34を研磨し、凹部31,32が基板35の第2主面36に露出した際に、絶縁材44が接合材または接着材として機能し、導波路構造48が基板35から離反することを防ぐことができる。 (3) As shown in FIG. 3B, the first main surface 33 of the substrate 35 having the first conductor layer 43 formed on the first main surface 33 is covered with an insulating material 44. The insulating material 44 may be filled in the recesses 31 and 32. Examples of the insulating material 44 include a resin. Thereby, as described later, when the second main surface 34 of the substrate 35 is polished, the first conductive layer formed on each of the inner wall of the concave portion 31, the inner wall of the concave portion 32, and the surface of the first main surface 33 is formed. 41, 42 and 43 can be protected. When the first conductor layer 41 serves as a side wall, the second main surface 34 of the substrate 35 is polished, and when the concave portions 31 and 32 are exposed on the second main surface 36 of the substrate 35, the insulating material 44 is bonded to the bonding material. Alternatively, it functions as an adhesive and can prevent the waveguide structure 48 from separating from the substrate 35.
 図3Cに示すように、基板35の第2主面34を研磨することにより、凹部31,32の一部が新たな第2主面36(研磨処理面、研磨によって得られた面)に露出した露出部EXが形成される。また、凹部31,32に形成された第1導体層41,42が新たな第2主面36に露出されて、側壁または貫通電極45、貫通電極46(露出電極)となる。側壁または貫通電極45および貫通電極46の形状は各々、原型10の凹部11,12の形状に従って、精密に形成された凹部31,32の形状に基づく。これにより、樹脂からなる基板35に高精度な側壁や貫通孔を作製することができる。 As shown in FIG. 3C, by polishing the second main surface 34 of the substrate 35, a part of the recesses 31 and 32 is exposed to a new second main surface 36 (polishing processing surface, surface obtained by polishing). The exposed portion EX is formed. In addition, the first conductor layers 41 and 42 formed in the concave portions 31 and 32 are exposed on the new second main surface 36 to become the side walls or the through electrodes 45 and the through electrodes 46 (exposed electrodes). The shapes of the side wall or through electrode 45 and the through electrode 46 are based on the shapes of the precisely formed recesses 31 and 32 according to the shapes of the recesses 11 and 12 of the prototype 10, respectively. Thereby, highly accurate side walls and through holes can be formed in the substrate 35 made of resin.
 図3Dに示すように、基板35の第2主面36に第2導体層47を形成する。第2導体層47を形成する方法は、上述したように、第1導体層41,42,43を形成する方法と同様でよい。また、上述したように、第2導体層47の表面(基板35に接する面とは反対側の外面)に酸化防止層を設けてもよく、第2導体層47のパターニングなどを適宜行ってもよい。層構成、パターニング等に関して、第2主面36に形成された第2導体層47が、第1主面33に形成された第1導体層43と同様であってもよく、互いに異なってもよい。 D As shown in FIG. 3D, a second conductor layer 47 is formed on the second main surface 36 of the substrate 35. The method of forming the second conductor layer 47 may be the same as the method of forming the first conductor layers 41, 42, and 43, as described above. Further, as described above, an oxidation preventing layer may be provided on the surface of the second conductor layer 47 (the outer surface opposite to the surface in contact with the substrate 35), and the second conductor layer 47 may be appropriately patterned. Good. The second conductor layer 47 formed on the second main surface 36 may be the same as or different from the first conductor layer 43 formed on the first main surface 33 with respect to the layer configuration, patterning, and the like. .
 パターン状のレジストを用いてパターン状の導体層を形成する方法としては、例えば、次の2つの方法が挙げられる。
(1)パターン状のレジストを形成した後に導体層を形成し、レジスト上に積層された導体層をレジストと一緒に除去して、レジストのない領域に導体層を残す方法(リフトオフ)。
(2)全面的に導体層を形成した上にパターン状のレジストを形成した後、レジストに覆われていない領域の材料層をエッチング等で除去し、さらに必要に応じて不要なレジストを除去する方法。
 エッチング法としては、適宜、ドライエッチング、ウェットエッチング等の各種から選択することができる。
As a method of forming a patterned conductor layer using a patterned resist, for example, the following two methods can be mentioned.
(1) A method in which a conductor layer is formed after a patterned resist is formed, the conductor layer laminated on the resist is removed together with the resist, and the conductor layer is left in a region where there is no resist (lift-off).
(2) After forming a patterned resist on the entire surface of the conductor layer, the material layer in a region not covered with the resist is removed by etching or the like, and if necessary, unnecessary resist is removed. Method.
The etching method can be appropriately selected from various types such as dry etching and wet etching.
 基板35に形成された側壁または貫通電極45、貫通電極46は、導波路、フィルタ、ダイプレクサ、方向性結合器、分配器等の受動部品(パッシブデバイス)を構成してもよい。例えば、基板35を構成する誘電体が、第1導体層43と第2導体層47と側壁45とで囲まれる領域を有する場合は、導波管と同様な導波路構造48を構成することができる。この導波路構造は、例えば、ミリ波などの高周波信号(電磁波)が伝搬される高周波デバイスとして利用することができる。周波数は特に限定されないが、例えば、30~300GHz、60~80GHz等が挙げられる。 The side wall or the through electrode 45 and the through electrode 46 formed on the substrate 35 may constitute a passive component (passive device) such as a waveguide, a filter, a diplexer, a directional coupler, and a distributor. For example, when the dielectric constituting the substrate 35 has a region surrounded by the first conductor layer 43, the second conductor layer 47, and the side wall 45, a waveguide structure 48 similar to a waveguide may be constituted. it can. This waveguide structure can be used, for example, as a high-frequency device through which a high-frequency signal (electromagnetic wave) such as a millimeter wave is propagated. Although the frequency is not particularly limited, for example, 30 to 300 GHz, 60 to 80 GHz and the like can be mentioned.
 導体層および貫通電極から構成される導波路構造として、例えば、ポスト壁導波路が挙げられる。ポスト壁導波路を構成する基板の両主面には、例えば、グランド電位に接続することで接地された広壁が設けられてもよい。貫通電極は、例えば、多数を配列することで導波路構造を囲む壁部を構成することができる。貫通電極から構成される壁部としては、導波路構造の幅方向に対向する狭壁、長手方向の端部に設けられるショート壁、その他の側壁等が挙げられる。壁部を構成する貫通電極の形状は、図3A~図3Dに示されるような円筒形状に限定されず、円柱形状等でもよい。また、貫通電極の配列も、受動部品の機能等に応じて種々の構成が可能であり、貫通電極が等間隔に配置された部分、貫通電極の間隔が不均等の部分、貫通電極が所定の区間に渡り配置されていない部分等を設けてもよい。 ポ ス ト As a waveguide structure composed of a conductor layer and a through electrode, for example, a post wall waveguide can be mentioned. For example, a wide wall grounded by connecting to a ground potential may be provided on both main surfaces of the substrate constituting the post wall waveguide. The through electrodes can constitute a wall surrounding the waveguide structure by arranging a large number of through electrodes, for example. Examples of the wall portion formed of the through electrode include a narrow wall facing the width direction of the waveguide structure, a short wall provided at an end in the longitudinal direction, and other side walls. The shape of the through-electrode forming the wall is not limited to the cylindrical shape as shown in FIGS. 3A to 3D, but may be a cylindrical shape or the like. In addition, the arrangement of the through electrodes can be variously configured in accordance with the function of the passive component, and the like. A portion in which the through electrodes are arranged at equal intervals, a portion in which the intervals between the through electrodes are uneven, and A portion that is not arranged over a section may be provided.
 導波路構造48の内部に設けられる貫通電極46は、モード変換機構を構成してもよい。モード変換機構は、導波路構造48の外部に設けられる配線層(図示せず)と接続され、配線層から導波路構造に対して電気信号を入力したり、または導波路構造から配線層に対して電気信号を出力したりすることができる。 貫通 The through electrode 46 provided inside the waveguide structure 48 may constitute a mode conversion mechanism. The mode conversion mechanism is connected to a wiring layer (not shown) provided outside the waveguide structure 48, and inputs an electric signal from the wiring layer to the waveguide structure, or inputs a signal from the waveguide structure to the wiring layer. To output electrical signals.
 図3Dに示されるように、導波路構造48等の受動部品を有する基板35において、基板35が複数の受動部品を搭載している場合は、受動部品ごとに基板を切断する個片化工程を有してもよい。基板を切断する装置としては、ブレードダイサー、レーザなどを用いた公知の加工装置が挙げられる。 As shown in FIG. 3D, in the case of the substrate 35 having passive components such as the waveguide structure 48, when the substrate 35 has a plurality of passive components mounted thereon, a singulation process of cutting the substrate for each passive component is performed. May have. As a device for cutting a substrate, a known processing device using a blade dicer, a laser, or the like can be given.
 図4A及び図4Bには、基板35に導波路構造48が形成された受動部品40を、配線基板50と接合する工程の一例を示す。配線基板50は、絶縁基材51の少なくとも片面に配線層52を有する。図4Aの場合は、受動部品40の第2導体層47が配線基板50と対向する側に重ね合わされている。また、受動部品40に対向する側の配線層52には、配線層52の保護等のため、絶縁層53が設けられている。これにより、第2導体層47と配線層52との間に、絶縁層53が介在した構造となる。受動部品40と配線基板50との接合手法は、特に限定されないが、接着剤、半田付け、嵌合や係合等の機械構造等が挙げられる。 FIGS. 4A and 4B show an example of a process of joining the passive component 40 in which the waveguide structure 48 is formed on the substrate 35 to the wiring substrate 50. The wiring board 50 has a wiring layer 52 on at least one surface of an insulating base material 51. In the case of FIG. 4A, the second conductor layer 47 of the passive component 40 is overlaid on the side facing the wiring board 50. The wiring layer 52 on the side facing the passive component 40 is provided with an insulating layer 53 for protecting the wiring layer 52 and the like. Thus, a structure in which the insulating layer 53 is interposed between the second conductor layer 47 and the wiring layer 52 is obtained. The joining method between the passive component 40 and the wiring board 50 is not particularly limited, and examples thereof include an adhesive, soldering, and a mechanical structure such as fitting or engaging.
 受動部品40を、配線基板50と電気的に接続する場合、例えば、図4Bに示すように、受動部品40と配線基板50とを貫通する連通孔55を形成した後、無電解メッキ等により、連通孔55に接続導体54を形成してもよい。これにより、基板35に形成される導波路構造48と配線基板50の配線層52とを電気的に接続することができる。接続導体54および連通孔55は、第2導体層47を貫通し、側壁45の間または貫通電極45の内部の絶縁材44に配置されてもよい。連通孔55を形成する装置は特に限定されないが、例えば、ドリル等の穿孔機械、レーザ等が挙げられる。 When the passive component 40 is electrically connected to the wiring board 50, for example, as shown in FIG. 4B, after forming a communication hole 55 penetrating the passive component 40 and the wiring board 50, by electroless plating or the like, The connection conductor 54 may be formed in the communication hole 55. Thus, the waveguide structure 48 formed on the substrate 35 and the wiring layer 52 of the wiring substrate 50 can be electrically connected. The connection conductor 54 and the communication hole 55 may penetrate the second conductor layer 47 and may be arranged between the side walls 45 or on the insulating material 44 inside the through electrode 45. A device for forming the communication hole 55 is not particularly limited, and examples thereof include a drilling machine such as a drill, a laser, and the like.
 以上、本発明を好適な実施形態に基づいて説明してきたが、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の改変が可能である。改変としては、各実施形態における構成要素の追加、置換、省略、その他の変更が挙げられる。 Although the present invention has been described based on the preferred embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present invention. Modifications include addition, substitution, omission, and other changes of the components in each embodiment.
 貫通孔に貫通電極を設ける方法は、上述の実施形態のように、基板の第2主面を研磨する前の凹部に導体層を形成する方法に限られない。例えば、基板の第2主面を研磨して、基板に貫通孔を形成した後で、貫通孔に導体層を形成してもよい。 方法 The method of providing the through electrode in the through hole is not limited to the method of forming the conductor layer in the concave portion before polishing the second main surface of the substrate as in the above-described embodiment. For example, after the second main surface of the substrate is polished to form a through hole in the substrate, the conductor layer may be formed in the through hole.
 上述の実施形態に係る高周波受動部品においては、同一の基板に複数の部品が構成されてもよい。基板に構成される他の部品は、高周波用の受動部品に限らず、他の受動部品や能動部品等を含んでもよい。部品をモジュール化することにより、高周波モジュールを構成することもできる。本実施形態の高周波モジュールは、例えば、上述の高周波受動部品を備えるモジュールである。モジュールには、機能に必要な種々の部品を組み込むことができる。 In the high-frequency passive component according to the above-described embodiment, a plurality of components may be configured on the same substrate. Other components configured on the substrate are not limited to high frequency passive components, and may include other passive components, active components, and the like. By modularizing the components, a high-frequency module can be configured. The high-frequency module of the present embodiment is, for example, a module including the above-described high-frequency passive component. Various components necessary for the function can be incorporated in the module.
 10…原型、11,12…原型の凹部、20…型、21,22…型の凸部、30…基板材料、31,32…凹部、35…基板、40…受動部品、41,42,43…第1導体層、44…絶縁材、45…側壁または貫通電極、46…貫通電極、47…第2導体層、48…導波路構造、50…配線基板、52…配線層、54…接続導体、55…連通孔。 Reference numerals 10: prototype, 11, 12: prototype recess, 20: mold, 21, 22, ... projection, 30: substrate material, 31, 32: recess, 35: substrate, 40: passive component, 41, 42, 43 ... A first conductor layer, 44 an insulating material, 45 a side wall or through electrode, 46 a through electrode, 47 a second conductor layer, 48 a waveguide structure, 50 a wiring board, 52 a wiring layer, 54 a connection conductor , 55 ... communication holes.

Claims (7)

  1.  誘電体からなる基板と、前記基板に形成された側壁および貫通電極のうち少なくとも一方とを有する高周波受動部品の製造方法であって、
     側壁および貫通電極のうち少なくとも一方に対応する凹部を有する原型をガラスから作製し、
     前記原型を用いて、前記凹部に対応する凸部を有する型を金属から作製し、
     前記型を用いて、前記凸部に対応する凹部が開口する第1主面と、前記第1主面とは反対側の第2主面とを有する基板を樹脂から作製し、
     前記基板の前記第2主面を研磨して、前記凹部の一部が前記第2主面に露出した露出部を形成し、
     前記基板の前記第1主面に開口する前記凹部、または、前記基板の前記第2主面に露出した前記露出部に、側壁および貫通電極のうち少なくとも一方となる導体層を形成する、
     高周波受動部品の製造方法。
    A method for manufacturing a high-frequency passive component having a substrate made of a dielectric material and at least one of a side wall and a through electrode formed on the substrate,
    Producing a prototype having a concave portion corresponding to at least one of the side wall and the through electrode from glass,
    Using the prototype, a mold having a convex portion corresponding to the concave portion is made of metal,
    Using the mold, a substrate having a first main surface in which a concave portion corresponding to the convex portion is opened and a second main surface opposite to the first main surface is produced from a resin,
    Polishing the second main surface of the substrate to form an exposed portion in which a part of the concave portion is exposed on the second main surface;
    Forming a conductor layer to be at least one of a side wall and a through electrode on the concave portion opened on the first main surface of the substrate, or on the exposed portion exposed on the second main surface of the substrate;
    Manufacturing method of high frequency passive components.
  2.  前記側壁および前記貫通電極のうち少なくとも一方に対応する前記凹部を有する前記原型をガラスから作製する際に、フェムト秒レーザアシストエッチングを使用する請求項1に記載の高周波受動部品の製造方法。 2. The method for manufacturing a high-frequency passive component according to claim 1, wherein when the mold having the concave portion corresponding to at least one of the side wall and the through electrode is manufactured from glass, femtosecond laser-assisted etching is used.
  3.  前記凹部を有する前記第1主面に導体層を形成し、
     前記凹部の一部が前記第2主面に露出する前記露出部を形成した後に、前記第2主面に導体層を形成する、
     請求項1又は請求項2に記載の高周波受動部品の製造方法。
    Forming a conductor layer on the first main surface having the concave portion;
    After forming the exposed portion where a part of the concave portion is exposed on the second main surface, a conductor layer is formed on the second main surface.
    The method for manufacturing a high-frequency passive component according to claim 1.
  4.  前記凹部の一部が前記第2主面に露出する前記露出部の形成に先立って、
     前記凹部を有する前記第1主面に導体層を形成し、
     前記凹部が開口する前記第1主面に形成された導体層を絶縁材で被覆する、
     請求項1から請求項3のいずれか一項に記載の高周波受動部品の製造方法。
    Prior to the formation of the exposed portion where a part of the concave portion is exposed on the second main surface,
    Forming a conductor layer on the first main surface having the concave portion;
    Covering the conductor layer formed on the first main surface where the concave portion opens with an insulating material;
    The method for manufacturing a high-frequency passive component according to claim 1.
  5.  前記凹部の一部が前記第2主面に露出する前記露出部の形成に先立って、前記基板の前記凹部に、側壁および貫通電極のうち少なくとも一方となる導体層を形成し、
     前記凹部の一部が前記第2主面に露出した前記露出部を形成する際において、前記凹部に形成された前記導体層を、前記第2主面に露出させて、側壁および貫通電極のうち少なくとも一方とする請求項1から請求項4のいずれか一項に記載の高周波受動部品の製造方法。
    Prior to the formation of the exposed portion where a part of the concave portion is exposed on the second main surface, a conductive layer to be at least one of a side wall and a through electrode is formed in the concave portion of the substrate,
    When forming the exposed portion in which a part of the concave portion is exposed on the second main surface, the conductive layer formed on the concave portion is exposed on the second main surface, and the side wall and the through electrode are formed. The method for manufacturing a high-frequency passive component according to any one of claims 1 to 4, wherein the method is at least one.
  6.  前記高周波受動部品が、前記基板の両面に形成された導体層と、前記導体層に接続された側壁または貫通電極により導波領域とを囲むように構成される導波路構造を有する請求項1から請求項5のいずれか一項に記載の高周波受動部品の製造方法。 2. The high-frequency passive component according to claim 1, having a waveguide structure configured to surround a conductor layer formed on both surfaces of the substrate and a waveguide region by a sidewall or a through electrode connected to the conductor layer. 3. A method for manufacturing the high-frequency passive component according to claim 5.
  7.  前記基板を、前記基板とは異なる配線基板上に接合し、
     前記基板と、前記配線基板とを貫通する連通孔を形成し、
     前記連通孔に接続導体を形成して、前記基板に形成される高周波受動部品と前記配線基板の配線とを電気的に接続する、
     請求項3から請求項6のいずれか一項に記載の高周波受動部品の製造方法。
    Bonding the substrate on a wiring substrate different from the substrate,
    Forming a communication hole penetrating the substrate and the wiring substrate,
    Forming a connection conductor in the communication hole, and electrically connecting a high-frequency passive component formed on the substrate and the wiring of the wiring substrate,
    A method for manufacturing a high-frequency passive component according to any one of claims 3 to 6.
PCT/JP2019/026447 2018-07-06 2019-07-03 Method for producing high-frequency passive component WO2020009145A1 (en)

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Citations (5)

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JPS5749530A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Manufacture of replica
JP2012006233A (en) * 2010-06-24 2012-01-12 Toshiba Mach Co Ltd Method for manufacturing mold
JP2013043415A (en) * 2011-08-26 2013-03-04 Fujikura Ltd Imprint mold, and method for manufacturing printed circuit board
JP2014158243A (en) * 2013-02-18 2014-08-28 Fujikura Ltd Method of manufacturing mode converter
JP2014216541A (en) * 2013-04-26 2014-11-17 株式会社フジクラ Wiring board and manufacturing method of the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749530A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Manufacture of replica
JP2012006233A (en) * 2010-06-24 2012-01-12 Toshiba Mach Co Ltd Method for manufacturing mold
JP2013043415A (en) * 2011-08-26 2013-03-04 Fujikura Ltd Imprint mold, and method for manufacturing printed circuit board
JP2014158243A (en) * 2013-02-18 2014-08-28 Fujikura Ltd Method of manufacturing mode converter
JP2014216541A (en) * 2013-04-26 2014-11-17 株式会社フジクラ Wiring board and manufacturing method of the same

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