WO2020004345A1 - High-frequency passive component - Google Patents

High-frequency passive component Download PDF

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Publication number
WO2020004345A1
WO2020004345A1 PCT/JP2019/025002 JP2019025002W WO2020004345A1 WO 2020004345 A1 WO2020004345 A1 WO 2020004345A1 JP 2019025002 W JP2019025002 W JP 2019025002W WO 2020004345 A1 WO2020004345 A1 WO 2020004345A1
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WO
WIPO (PCT)
Prior art keywords
conductor layer
substrate
layer
passive component
dielectric layer
Prior art date
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PCT/JP2019/025002
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French (fr)
Japanese (ja)
Inventor
理 額賀
信之介 土谷
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株式会社フジクラ
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Application filed by 株式会社フジクラ filed Critical 株式会社フジクラ
Priority to JP2020527522A priority Critical patent/JPWO2020004345A1/en
Publication of WO2020004345A1 publication Critical patent/WO2020004345A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Definitions

  • the present invention relates to a high-frequency passive component.
  • This application is based on Japanese Patent Application No. 2018-123217 filed on June 28, 2018, Japanese Patent Application No. 2018-228457 filed on December 5, 2018, and Japan on June 7, 2019.
  • Priority is claimed based on Japanese Patent Application No. 2019-107036 filed in US Pat.
  • Patent Document 1 proposes a mode converter using a post-wall waveguide (Post-wall @ Waveguide).
  • the wiring layer may be separated from the substrate depending on the use environment. In particular, this problem becomes remarkable when a material excellent in high-frequency characteristics is preferentially selected as a substrate, rather than adhesion to a wiring layer.
  • the present invention has been made in view of the above problems, and has as its object to provide a high-frequency passive component capable of suppressing a conductive layer such as a wiring from peeling off from a substrate.
  • a high-frequency passive component includes a substrate formed of a dielectric, a conductor layer in contact with the substrate, and a dielectric layer formed on the substrate. An end of the conductor layer is disposed on a surface of the dielectric layer.
  • the substrate may have a through-hole
  • the conductor layer may have a through-electrode disposed in the through-hole
  • the conductor layer may include a pad located on an upper surface of the dielectric layer.
  • the high-frequency passive component may further include a sealing layer formed of a resin and sealing at least a part of the conductor layer.
  • the high-frequency passive component of the above aspect may have a waveguide structure configured to surround the waveguide region by the wide walls formed on both surfaces of the substrate and the through electrodes connecting the wide walls. Good.
  • a second dielectric layer may be laminated on at least one of the wide walls, and a second conductor layer may be laminated on the second dielectric layer.
  • the arrangement of the dielectric layer and the conductor layer is devised, so that the conductor layer can be prevented from peeling from the substrate.
  • FIG. 1 shows a cross-sectional structure of a high-frequency passive component 1A according to the first embodiment.
  • the high-frequency passive component 1A includes a substrate 10, a conductor layer 11, and a dielectric layer 12.
  • the conductor layer 11 and the dielectric layer 12 are formed on the upper surface of the substrate 10.
  • a cross section along the thickness direction of the substrate 10 is simply referred to as a “cross section”.
  • the first surface of the substrate 10 is called an upper surface
  • the second surface is called a lower surface.
  • the substrate 10 is formed of a dielectric.
  • the substrate 10 may be a dielectric substrate such as a glass substrate, a sapphire substrate, or a quartz substrate, a single crystal substrate, a composite substrate, or the like.
  • the conductor layer 11 may include a wiring or the like formed in contact with the surface of the substrate 10. The wiring or the like can be used as a passive component for transmitting a high-frequency signal or the like.
  • the conductor layer 11 can be composed of, for example, a thin film of a conductor such as a metal.
  • the conductor layer 11 has a plurality of ends 11a.
  • the conductor layer 11 is formed over the upper surface of the dielectric layer 12, the side surface of the dielectric layer 12, and the upper surface of the substrate 10.
  • the upper surface of the dielectric layer 12 is substantially parallel to the upper surface of the substrate 10.
  • the side surface of the dielectric layer 12 is a surface extending in a direction crossing the upper surface of the substrate 10.
  • a dielectric layer 12 is formed near the end 11a of the conductor layer 11.
  • the dielectric layer 12 is sandwiched between the conductor layer 11 and the substrate 10 in the thickness direction of the substrate 10. Further, an end 11 a of the conductor layer 11 is arranged on the surface of the dielectric layer 12.
  • a material for forming the dielectric layer 12 for example, a resin is used.
  • the conductor layer 11 can be prevented from peeling off from the substrate 10.
  • the present invention is not particularly limited.
  • the conductor layer 11 may peel off from the substrate 10 depending on the use environment. For example, if the temperature rise from a low temperature to a high temperature or the temperature drop from a high temperature to a low temperature is excessive, stress between the layers is increased due to the difference in the coefficient of thermal expansion between the material forming the conductor layer 11 and the material forming the substrate 10. May occur. The peeling of the conductor layer 11 is likely to occur starting from the end 11a of the conductor layer 11.
  • the dielectric layer 12 is provided on the substrate 10, and the end 11 a of the conductor layer 11 is arranged on the surface of the dielectric layer 12.
  • the stress is reduced via the dielectric layer 12 without the end 11 a of the conductor layer 11 being in contact with the substrate 10. Therefore, it is considered that peeling of the end 11a of the conductor layer 11 from the substrate 10 can be suppressed.
  • the conductor layer 11 and the dielectric layer 12 are formed only on one side of the substrate 10, but the conductor layer 11 and the dielectric layer 12 may be formed on both sides of the substrate 10.
  • the conductor layer 11 is arranged at least partially right above the substrate 10, that is, at a position in contact with the surface of the substrate 10, and is arranged on the surface of the dielectric layer 12 at an end 11a.
  • the end 11 a of the conductor layer 11 may be arranged on the surface of the dielectric layer 12, and the conductor layer 11 in other portions may be in contact with the substrate 10.
  • the conductor layer 11 may have pads for external connection and the like arranged on the upper surface of the dielectric layer 12.
  • the pad can be formed of a conductor pattern wider than the wiring.
  • the planar shape of the pad is not particularly limited, and examples include a polygon such as a quadrangle, a circle, and the like.
  • Examples of the end 11a of the conductor layer 11 include a longitudinal end of a wiring or the like, an end of a pad or the like, a corner of a wide wall, and the like.
  • the contact surface between the end 11a of the conductor layer 11 and the dielectric layer 12 may be parallel, perpendicular or inclined with respect to the plane direction of the substrate 10.
  • the method for manufacturing the high-frequency passive component 1A according to the first embodiment includes, for example, a step of preparing a substrate 10, a step of forming a dielectric layer 12 on the substrate 10 by a predetermined pattern, and a method of manufacturing the substrate 10 having the dielectric layer 12. Forming a conductive layer 11 with a predetermined pattern on the surface.
  • the method of manufacturing the high-frequency passive component 1A is not limited to the above, and can be appropriately changed.
  • a wafer-shaped large-area substrate 10 may be prepared.
  • a method of forming a predetermined pattern of the dielectric layer 12 for example, photolithography using a resist can be mentioned.
  • mask vapor deposition or the like in which a predetermined material is laminated on the substrate 10 via a mask may be used.
  • a step of cutting the substrate 10 for each passive component may be included.
  • the resist examples include a liquid negative resist, a film negative resist, a liquid positive resist, and a film positive resist.
  • the resist is irradiated with energy rays through a mask or the like so that a predetermined pattern is exposed, thereby causing a chemical difference between an exposed portion and an unexposed portion. . Thereafter, either the exposed portion or the unexposed portion is selectively removed with a solvent or the like. In the case of the negative type, the unexposed portion is dissolved and removed, and in the case of the positive type, the exposed portion is dissolved and removed.
  • energy rays include visible light, ultraviolet rays, electromagnetic waves such as X-rays, and particle beams such as electron beams.
  • the following (1) or (2) can be mentioned.
  • (1) A resist is formed on a substrate 10, and a specific material layer is formed thereon as a dielectric layer 12. After that, the material layer laminated on the resist is removed together with the resist, leaving a material layer in a region where there is no resist (lift-off).
  • the etching method can be appropriately selected from various types such as dry etching and wet etching.
  • a method of forming the conductor layer 11 there are vapor deposition, sputtering, electroless plating, electrolytic plating, conductor paste and the like. Two or more kinds of conductor materials or film forming methods may be used in combination, or two or more kinds of conductors may be laminated to form the conductor layer 11. For example, after forming a thin seed layer on the surface of glass, a plating layer having a desired thickness may be laminated on the seed layer.
  • FIG. 2 shows a cross-sectional structure of a high-frequency passive component 1B according to the second embodiment.
  • the conductor layer 11 and the dielectric layer 12 are provided on both surfaces (upper and lower surfaces) of the substrate 10.
  • the substrate 10 has a through hole 13a, and the conductor layer 11 has a through electrode 13 arranged in the through hole 13a.
  • the through electrode 13 may be configured to be hollow in the through hole 13a, or may fill the through hole 13a solidly.
  • the through electrode 13 may constitute a passive component (passive device) such as a waveguide, a filter, a diplexer, a directional coupler, and a distributor.
  • the dielectric constituting the substrate 10 has a region surrounded by the conductor layers 11 (two wide walls 11c) on both surfaces and the through-electrode 13, a waveguide structure similar to the waveguide is formed.
  • This waveguide structure can be used as a high-frequency device through which a high-frequency signal (electromagnetic wave) such as a millimeter wave is propagated.
  • the frequency is not particularly limited, but is, for example, 30 to 300 GHz, 60 to 80 GHz, or the like.
  • the conductor layer 11 may have a pad for external connection or the like located on the upper surface of the dielectric layer 12.
  • the dielectric layer 12 is formed on the substrate 10 at a position away from the through hole 13a.
  • the upper conductive layer 11 is formed over the upper surface and side surfaces of the dielectric layer 12, the upper surface of the substrate 10 between the dielectric layer 12 and the through hole 13a, and the inner surface of the through hole 13a.
  • the lower conductor layer 11 is formed over the lower surface and side surfaces of the dielectric layer 12, the lower surface of the substrate 10 between the dielectric layer 12 and the through hole 13a, and the inner surface of the through hole 13a.
  • the upper conductor layer 11 and the lower conductor layer 11 are connected inside the through-hole 13a. In both the upper conductor layer 11 and the lower conductor layer 11, the end 11a is disposed on the surface of the dielectric layer 12. Thereby, similarly to the first embodiment, peeling of the conductor layer 11 from the substrate 10 can be suppressed.
  • a drilling machine such as a drill, laser, etching, or the like can be used.
  • a method may be used in which the material of the substrate 10 such as glass is locally modified by condensing irradiation of a laser, and a portion having increased solubility due to the modification is selectively removed by wet etching. .
  • a method for forming the through electrode 13 in the through hole 13a there are vapor deposition, sputtering, electroless plating, electrolytic plating, conductor paste and the like. Two or more kinds of conductor materials or film forming methods may be used in combination, and two or more kinds of conductors may be laminated to form the through electrode 13. For example, after forming a thin seed layer on the surface of glass, a plating layer having a desired thickness may be laminated on the seed layer. In order to form the through electrode 13, the above-described resist may be provided on the substrate 10 around the through hole 13a.
  • FIG. 3 shows a cross-sectional structure of a high-frequency passive component 1C according to the third embodiment.
  • a sealing layer 14 made of resin or the like is laminated on the conductor layer 11.
  • the sealing layer 14 seals at least a part of the conductor layer 11.
  • the sealing layer 14 may have, for example, an opening 14a for external connection.
  • the conductor layer 11 exposed by the opening 14a may have a pad 11b for external connection or the like.
  • the sealing layer 14 can be composed of, for example, an overcoat.
  • the opening 14a can be formed by patterning such as photolithography.
  • the sealing layers 14 are formed on both surfaces of the substrate 10, but the sealing layers 14 may be formed on only one surface of the substrate 10.
  • FIG. 4 shows a cross-sectional structure of a high-frequency passive component 1D according to the fourth embodiment.
  • the end 11a of the conductor layer 11 is arranged on the upper surface of the dielectric layer 12, as shown in FIG.
  • the high-frequency passive component 1D of the fourth embodiment as shown in FIG.
  • the side surface of the dielectric layer 12 extends along the thickness direction of the substrate 10.
  • the end 11a of the conductor layer 11 is arranged on the surface of the dielectric layer 12. For this reason, similarly to the first embodiment, the peeling of the conductor layer 11 from the substrate 10 can be suppressed.
  • the height at which the end 11 a of the conductor layer 11 is located may be lower than the upper surface of the dielectric layer 12 or may be equal to the upper surface of the dielectric layer 12.
  • FIG. 5 shows a perspective view including a cross-sectional structure of the high-frequency passive component of the fifth embodiment 1E.
  • the end 11 a in the outer peripheral portion of the conductor layer 11 is arranged on the upper surface of the dielectric layer 12.
  • the end 11a can be arranged on the upper surface of the dielectric layer 12 also in the width direction of the wiring forming the conductor layer 11.
  • FIG. 6 shows a cross-sectional structure of a high-frequency passive component 1F according to the sixth embodiment.
  • a waveguide structure 21 similar to the waveguide structure mentioned in the second embodiment is formed on the substrate 10.
  • the substrate 10 include a dielectric substrate such as a glass substrate, a sapphire substrate, and a quartz substrate, a single crystal substrate, and a composite substrate.
  • the waveguide structure 21 includes at least two wide walls 11 c formed of the conductor layers 11 formed on both surfaces of the substrate 10 and a plurality of through electrodes 13. Each through electrode 13 connects the two wide walls 11c.
  • a region 22 outside the waveguide structure 21 is a region outside the substrate 10 excluding the waveguide region 20.
  • a dielectric layer 15 is laminated on at least one of the upper conductor layer 11 and the lower conductor layer 11.
  • An upper conductor layer 16 may be provided on the dielectric layer 15.
  • the dielectric layer 15 is a second dielectric layer provided at a different position from the dielectric layer 12.
  • the upper conductor layer 16 is a second conductor layer provided at a position different from that of the conductor layer 11.
  • the end 11 a in the outer peripheral portion of the conductor layer 11 may be in contact with the dielectric layer 12.
  • the end 11a of the conductor layer 11 is disposed on the upper surface of the dielectric layer 12.
  • the upper conductor layer 16 is not in contact with the substrate 10.
  • the dielectric layer 15 and the upper conductor layer 16 are formed within the range of the waveguide structure 21.
  • the present invention is not particularly limited to this, and the dielectric layer 15 and the upper conductor layer 16 may be formed up to the region 22 outside the waveguide structure 21.
  • FIG. 7 shows a cross-sectional structure of a high-frequency passive component 1G according to the seventh embodiment.
  • the high-frequency passive component 1G an opening 23 is formed in the conductor layer 11 in the waveguide region 20 in addition to the configuration of the high-frequency passive component 1F (FIG. 6).
  • the position of the opening 23 may be a portion where the dielectric layer 15 is laminated on the conductor layer 11, or may be another position.
  • the end 11 a of the conductor layer 11 is located at the outer periphery of the region 22 outside the waveguide structure 21 and around the opening 23. Both ends 11 a are arranged on the surface of the dielectric layer 12. Also in the seventh embodiment, the end 11a of the conductor layer 11 is disposed on the surface of the dielectric layer 12 in the same manner as described in the first embodiment, so that the end 11a of the conductor layer 11 is Will not be in contact with Then, the dielectric layer 12 functions as a stress relieving layer, and peeling of the end 11a of the conductor layer 11 can be suppressed.
  • FIG. 8 shows a cross-sectional structure of a high-frequency passive component 1H according to the eighth embodiment.
  • a via 17 is provided so as to connect between the conductor layer 11 and the upper conductor layer 16.
  • the via 17 is a conductor penetrating the dielectric layer 15.
  • Via 17 allows electrical connection between conductor layer 11 and upper conductor layer 16.
  • the shape, number, position, and the like of the vias 17 are not particularly limited, and the number of vias 17 may be one or two or more as necessary.
  • the upper conductor layer 16 has two or more separated conductor patterns, one or more vias 17 may be provided for each conductor pattern.
  • the via 17 for the conductor pattern may be omitted.
  • FIG. 9 shows a cross-sectional structure of the high-frequency passive component 1I of the ninth embodiment.
  • the high-frequency passive component 1I has a mode converter 18 in addition to the configuration of the high-frequency passive component 1H (FIG. 8).
  • the mode converter 18 includes a conductor (blind via) that does not penetrate the substrate 10 in the waveguide region 20.
  • the mode converter 18 is electrically connected to the upper conductor layer 16 via the via 17.
  • a signal propagated from the upper conductor layer 16 can be propagated to the waveguide region 20 of the waveguide structure 21 via the mode converter 18. Further, a signal that has propagated through the waveguide region 20 of the waveguide structure 21 can be propagated to the transmission path of the upper conductor layer 16 via the mode converter 18.
  • the via 17 connecting the mode converter 18 and the upper conductor layer 16 may be substantially cylindrical or substantially columnar.
  • the upper conductor layer 16 connected to the mode converter 18 via the via 17 and the upper conductor layer 16 connected to the conductor layer 11 via the via 17 may be separate conductor patterns.
  • the end 18 a of the portion where the conductor layer constituting the ⁇ ⁇ mode conversion portion 18 extends along the surface of the substrate 10 is disposed in the dielectric layer 12 formed on the substrate 10 in the opening 23. Thereby, it is possible to prevent the conductor layer forming the mode conversion unit 18 from peeling off from the substrate 10.
  • the plane shape of the conductor layer forming the mode converter 18 is, for example, a circular shape.
  • the planar shape of the opening 23 between the dielectric layer 12 on which the end 18a of the conductor layer constituting the mode converter 18 is disposed and the dielectric layer 12 on which the end 11a of the conductor layer 11 is disposed is, for example, a circle. It may be annular.
  • FIG. 10 shows a cross-sectional structure of the high-frequency passive component 1J according to the tenth embodiment.
  • the outer peripheral portion 11e of the conductor layer 11 in the region 22 outside the waveguide structure 21 is arranged so as to be in contact with the substrate 10.
  • the outer peripheral portion 11e is covered with the upper conductor layer 16. Since the upper conductor layer 16 covers the outer peripheral portion 11e of the conductor layer 11 forming the wide wall 11c, the peeling of the outer peripheral portion 11e of the conductor layer 11 can also be suppressed.
  • the upper conductor layer 16 includes a dielectric layer 15 formed outside the conductor layer 11 and a substrate 10 between the dielectric layer 15 formed outside the conductor layer 11 and the conductor layer 11. It is formed over the top, the conductor layer 11, and the dielectric layer 15 formed on the conductor layer 11.
  • the end 16 a of the upper conductor layer 16 in the region 22 outside the waveguide structure 21 By disposing the end 16 a of the upper conductor layer 16 in the region 22 outside the waveguide structure 21 on the surface of the dielectric layer 15 formed outside the conductor layer 11, the end 16 a does not contact the substrate 10 . Then, the dielectric layer 15 formed outside the conductor layer 11 functions as a stress relieving layer, and the exfoliation of the end 16a of the upper conductor layer 16 in the region 22 outside the waveguide structure 21 can be suppressed.
  • FIG. 11 shows a cross-sectional structure of a high-frequency passive component 1K according to the eleventh embodiment.
  • a sealing layer 19 made of resin or the like is laminated in addition to the configuration of the high-frequency passive component 1G (FIG. 7).
  • the sealing layer 19 may have, for example, an opening 19a for external connection.
  • the opening 19a of the sealing layer 19 communicates with a part of the upper conductor layer 16.
  • the upper conductor layer 16 exposed through the opening 19a may be a pad for external connection.
  • an opening communicating with a part of the conductor layer 11 in a region 22 outside the waveguide structure 21 may be provided in the sealing layer 19, and the conductor layer 11 exposed through the opening is formed with a pad for external connection. It may be.
  • the sealing layer 19 and the opening 19a of the eleventh embodiment can be formed by the same method as the sealing layer 14 and the opening 14a of the third embodiment.
  • FIG. 12 shows a cross-sectional structure of a high-frequency passive component 1L according to the twelfth embodiment.
  • the high-frequency passive component 1L an opening 23 is formed in the conductor layer 11 in the waveguide region 20 in addition to the configuration of the high-frequency passive component 1F (FIG. 6). Thereby, the mode of the waveguide region 20 and the mode of the outside can be converted through the opening 23.
  • the conductor layer 11 and the dielectric layer 12 are formed on both surfaces of the substrate 10, and the end 11a of the conductor layer 11 is disposed on the dielectric layer 12.
  • the end 11a of the conductor layer 11 is arranged on the surface of the dielectric layer 12 so that the end 11a of the conductor layer 11 is Will not be in contact with Then, the dielectric layer 12 functions as a stress relieving layer, and peeling of the end 11a of the conductor layer 11 can be suppressed.
  • the conductor layers 11 on both surfaces of the substrate 10 are connected through the through electrodes 13, the end 11 a of each conductor layer 11 is arranged on the dielectric layer 12, thereby reducing the warpage of the substrate 10. The effect of suppressing separation of the end 11a of the conductor layer 11 can be enhanced.
  • FIG. 13 shows a cross-sectional structure of a high-frequency passive component 1M according to the thirteenth embodiment.
  • a sealing layer 19 made of resin or the like is laminated on both surfaces of the substrate 10.
  • the sealing layer 19 has one or a plurality of openings 19a.
  • the opening 19a of the sealing layer 19 can be provided at both a position communicating with a part of the conductor layer 11 and a position communicating with a part of the upper conductor layer 16.
  • the conductor layer 11 exposed by the opening 19a may have a pad 11b for external connection or the like.
  • the present invention has been described based on the preferred embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present invention. Modifications include addition, substitution, omission, and other changes of the components in each embodiment. Also, the components used in two or more embodiments can be appropriately combined. That is, the components of the high-frequency passive components 1A to 1M may be appropriately combined.
  • a post wall waveguide As the waveguide structure 21 composed of the conductor layer 11 and the through electrode 13, for example, a post wall waveguide can be mentioned.
  • a wide wall 11c connected to, for example, a ground potential may be provided on both surfaces of the substrate 10 forming the post wall waveguide.
  • a wall surrounding the waveguide structure 21 can be formed.
  • the wall formed by the through electrode 13 include a narrow wall facing the width direction of the waveguide structure 21, a short wall provided at an end in the longitudinal direction, and other side walls.
  • the shape of the through electrode 13 forming the wall is not limited to a conductor pillar (post) having a cylindrical shape or the like.
  • a shape continuous along the wall, a shape continuous along the corner, or the like may be employed. You can also.
  • various arrangements of the arrangement of the through electrodes 13 are possible according to the function of the passive component and the like. For example, a portion where the through electrodes 13 are arranged at equal intervals, a portion where the intervals between the through electrodes 13 are uneven, a portion where the through electrodes 13 are not arranged over a predetermined section, or the like may be provided.
  • a plurality of components may be configured on the same substrate 10.
  • the other components configured on the substrate 10 are not limited to high frequency passive components, and may include other passive components, active components, and the like.
  • a high-frequency module can be configured.
  • the high-frequency module of the present embodiment is, for example, a module including the above-described high-frequency passive component.
  • Various components necessary for the function can be incorporated in the module.
  • 1A to 1M high-frequency passive component
  • 10 substrate
  • 11 conductor layer
  • 11a end of conductor layer
  • 11b pad
  • 11c wide wall
  • 12 dielectric layer
  • 13 through electrode
  • 13a through hole
  • 14, 19 sealing layer
  • 15 second dielectric layer
  • 16 upper conductor layer (second conductor layer)
  • 20 waveguide region
  • 21 waveguide structure

Abstract

This high-frequency passive component is provided with: a substrate which is formed of a dielectric material; a conductor layer which is in contact with the substrate; and a dielectric layer which is formed on the substrate. An end of the conductor layer is arranged on top of the surface of the dielectric layer.

Description

高周波受動部品High frequency passive components
　本発明は、高周波受動部品に関する。
　本願は、２０１８年６月２８日に日本に出願された特願２０１８－１２３２１７号、２０１８年１２月５日に日本に出願された特願２０１８－２２８４５７号、および２０１９年６月７日に日本に出願された特願２０１９－１０７０３６号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a high-frequency passive component.
This application is based on Japanese Patent Application No. 2018-123217 filed on June 28, 2018, Japanese Patent Application No. 2018-228457 filed on December 5, 2018, and Japan on June 7, 2019. Priority is claimed based on Japanese Patent Application No. 2019-107036 filed in US Pat.
　近年、ミリ波帯を利用した数Ｇ［ｂｐｓ］の高速大容量通信が提案され、その一部が実現されつつある。小型で安価なミリ波通信モジュールを実現する形態として、例えば、特許文献１には、ポスト壁導波路（Ｐｏｓｔ－ｗａｌｌ　Ｗａｖｅｇｕｉｄｅ）を利用したモード変換器が提案されている。 In recent years, high-speed, large-capacity communication of several gigabits per second (bps) using the millimeter wave band has been proposed, and a part thereof is being realized. As a mode for realizing a small and inexpensive millimeter-wave communication module, for example, Patent Document 1 proposes a mode converter using a post-wall waveguide (Post-wall @ Waveguide).
日本国特開２０１４－１５８２４３号公報JP 2014-158243 A
　電磁界を閉じ込める導波路部分等を設けた配線基板において、外部接続等を行う配線を基板の直上に設けると、使用環境によっては配線層が基板から剥離することがあった。特に、配線層に対する密着性よりも、高周波特性に優れた材質を、優先的に基板として選択する場合に、この課題は顕著になる。 (4) In a wiring board provided with a waveguide portion or the like for confining an electromagnetic field, if wiring for external connection or the like is provided immediately above the substrate, the wiring layer may be separated from the substrate depending on the use environment. In particular, this problem becomes remarkable when a material excellent in high-frequency characteristics is preferentially selected as a substrate, rather than adhesion to a wiring layer.
　本発明は、上記課題に鑑みてなされたものであり、配線等の導体層が基板から剥離することを抑制することが可能な高周波受動部品を提供することを目的とする。 The present invention has been made in view of the above problems, and has as its object to provide a high-frequency passive component capable of suppressing a conductive layer such as a wiring from peeling off from a substrate.
　前記課題を解決するため、本発明の一態様に係る高周波受動部品は、誘電体によって形成された基板と、前記基板に接する導体層と、前記基板上に形成された誘電体層とを備え、前記導体層の端部が、前記誘電体層の表面上に配置されている。 To solve the above problem, a high-frequency passive component according to one embodiment of the present invention includes a substrate formed of a dielectric, a conductor layer in contact with the substrate, and a dielectric layer formed on the substrate. An end of the conductor layer is disposed on a surface of the dielectric layer.
　上記態様の高周波受動部品において、前記基板が貫通孔を有し、前記導体層が前記貫通孔内に配置された貫通電極を有してもよい。 In the high-frequency passive component according to the above aspect, the substrate may have a through-hole, and the conductor layer may have a through-electrode disposed in the through-hole.
　また、前記導体層が、前記誘電体層の上面に位置するパッドを有してもよい。 The conductor layer may include a pad located on an upper surface of the dielectric layer.
　また、前記高周波受動部品は、前記導体層の少なくとも一部を封止する、樹脂により形成された封止層をさらに備えていてもよい。 In addition, the high-frequency passive component may further include a sealing layer formed of a resin and sealing at least a part of the conductor layer.
　また、上記態様の高周波受動部品は、前記基板の両面に形成された広壁及び前記広壁同士を接続する貫通電極により導波領域を囲むように構成される導波路構造を有していてもよい。 Further, the high-frequency passive component of the above aspect may have a waveguide structure configured to surround the waveguide region by the wide walls formed on both surfaces of the substrate and the through electrodes connecting the wide walls. Good.
　また、少なくとも前記広壁のいずれか一方には第２の誘電体層が積層され、前記第２の誘電体層には第２の導体層が積層されていてもよい。 (4) A second dielectric layer may be laminated on at least one of the wide walls, and a second conductor layer may be laminated on the second dielectric layer.
　本発明の上記態様に係る高周波受動部品によれば、誘電体層と導体層との配置を工夫することにより、基板から導体層が剥離することを抑制することができる。 According to the high-frequency passive component according to the aspect of the present invention, the arrangement of the dielectric layer and the conductor layer is devised, so that the conductor layer can be prevented from peeling from the substrate.
第１実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 1st Embodiment. 第２実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 2nd Embodiment. 第３実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 3rd Embodiment. 第４実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 4th Embodiment. 第５実施形態の高周波受動部品を示す斜視図である。It is a perspective view showing the high frequency passive component of a 5th embodiment. 第６実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 6th Embodiment. 第７実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 7th Embodiment. 第８実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 8th Embodiment. 第９実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 9th Embodiment. 第１０実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 10th Embodiment. 第１１実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 11th Embodiment. 第１２実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 12th Embodiment. 第１３実施形態の高周波受動部品を示す断面図である。It is sectional drawing which shows the high frequency passive component of 13th Embodiment.
　以下、好適な実施形態に基づき、図面を参照して本発明を説明する。 Hereinafter, the present invention will be described based on preferred embodiments with reference to the drawings.
（第１実施形態）
　図１に、第１実施形態の高周波受動部品１Ａの断面構造を示す。高周波受動部品１Ａは、基板１０と、導体層１１と、誘電体層１２と、を備えている。導体層１１および誘電体層１２は、基板１０の上面に形成されている。
　本明細書では、基板１０の厚さ方向に沿う断面を、単に「断面」という。また、基板１０の第１の面を上面といい、第２の面を下面という。 (1st Embodiment)
FIG. 1 shows a cross-sectional structure of a high-frequency passive component 1A according to the first embodiment. The high-frequency passive component 1A includes a substrate 10, a conductor layer 11, and a dielectric layer 12. The conductor layer 11 and the dielectric layer 12 are formed on the upper surface of the substrate 10.
In this specification, a cross section along the thickness direction of the substrate 10 is simply referred to as a “cross section”. The first surface of the substrate 10 is called an upper surface, and the second surface is called a lower surface.
　基板１０は、誘電体によって形成されている。基板１０は、ガラス基板、サファイア基板、石英基板等の誘電体基板、単結晶基板、複合基板等であってもよい。基板１０としては、誘電正接が小さい等、高周波特性の優れた材料が好ましい。導体層１１としては、基板１０の表面に接して形成された配線等を含むことができる。配線等は、受動部品として、高周波信号の伝送等に用いることができる。導体層１１は、例えば金属などの導電体の薄膜から構成することができる。 The substrate 10 is formed of a dielectric. The substrate 10 may be a dielectric substrate such as a glass substrate, a sapphire substrate, or a quartz substrate, a single crystal substrate, a composite substrate, or the like. As the substrate 10, a material having excellent high-frequency characteristics such as a small dielectric loss tangent is preferable. The conductor layer 11 may include a wiring or the like formed in contact with the surface of the substrate 10. The wiring or the like can be used as a passive component for transmitting a high-frequency signal or the like. The conductor layer 11 can be composed of, for example, a thin film of a conductor such as a metal.
　導体層１１は、複数の端部１１ａを有している。導体層１１は、誘電体層１２の上面、誘電体層１２の側面、および基板１０の上面にわたって形成されている。誘電体層１２の上面は基板１０の上面と略平行な面である。誘電体層１２の側面は、基板１０の上面と交差する方向に延びる面である。 The conductor layer 11 has a plurality of ends 11a. The conductor layer 11 is formed over the upper surface of the dielectric layer 12, the side surface of the dielectric layer 12, and the upper surface of the substrate 10. The upper surface of the dielectric layer 12 is substantially parallel to the upper surface of the substrate 10. The side surface of the dielectric layer 12 is a surface extending in a direction crossing the upper surface of the substrate 10.
　基板１０上において、導体層１１の端部１１ａ付近には、誘電体層１２が形成されている。本実施形態では、誘電体層１２が、基板１０の厚さ方向において、導体層１１と基板１０との間に挟まれている。また、誘電体層１２の表面上に導体層１１の端部１１ａが配置されている。誘電体層１２を構成する材料としては、例えば樹脂が挙げられる。 誘 電 On the substrate 10, a dielectric layer 12 is formed near the end 11a of the conductor layer 11. In the present embodiment, the dielectric layer 12 is sandwiched between the conductor layer 11 and the substrate 10 in the thickness direction of the substrate 10. Further, an end 11 a of the conductor layer 11 is arranged on the surface of the dielectric layer 12. As a material for forming the dielectric layer 12, for example, a resin is used.
　本実施形態によれば、導体層１１と誘電体層１２との配置を工夫することにより、基板１０から導体層１１が剥離することを抑制することができる。この理由については、特に本発明を限定するものではないが、例えば次のような仮説が考えられる。使用環境によっては導体層１１が基板１０から剥離する場合がある。例えば、低温から高温への温度上昇や、高温から低温への温度降下が甚だしいと、導体層１１を構成する材料と、基板１０を構成する材料との熱膨張率の違いから、層間に応力が生じるおそれがある。また、導体層１１の剥離は、導体層１１の端部１１ａを起点として生じやすい。 According to the present embodiment, by devising the arrangement of the conductor layer 11 and the dielectric layer 12, the conductor layer 11 can be prevented from peeling off from the substrate 10. For this reason, the present invention is not particularly limited. For example, the following hypothesis is considered. The conductor layer 11 may peel off from the substrate 10 depending on the use environment. For example, if the temperature rise from a low temperature to a high temperature or the temperature drop from a high temperature to a low temperature is excessive, stress between the layers is increased due to the difference in the coefficient of thermal expansion between the material forming the conductor layer 11 and the material forming the substrate 10. May occur. The peeling of the conductor layer 11 is likely to occur starting from the end 11a of the conductor layer 11.
　そこで本実施形態では、基板１０上に誘電体層１２を設け、導体層１１の端部１１ａを誘電体層１２の表面上に配置している。この構成により、導体層１１の端部１１ａが基板１０に接することなく、誘電体層１２を介して応力が緩和される。このため、導体層１１の端部１１ａの基板１０からの剥離が抑制できると考えられる。 Therefore, in the present embodiment, the dielectric layer 12 is provided on the substrate 10, and the end 11 a of the conductor layer 11 is arranged on the surface of the dielectric layer 12. With this configuration, the stress is reduced via the dielectric layer 12 without the end 11 a of the conductor layer 11 being in contact with the substrate 10. Therefore, it is considered that peeling of the end 11a of the conductor layer 11 from the substrate 10 can be suppressed.
　図１では、基板１０のうち片面のみに導体層１１及び誘電体層１２が形成されているが、基板１０の両面に導体層１１及び誘電体層１２が形成されてもよい。導体層１１は、少なくとも一部において基板１０の直上、すなわち基板１０の面に接する位置に配置され、端部１１ａにおいて、誘電体層１２の表面上に配置されている。導体層１１の端部１１ａが誘電体層１２の表面上に配置され、それ以外の部分の導体層１１が基板１０に接していてもよい。導体層１１が、誘電体層１２の上面に配置された外部接続用等のパッドを有してもよい。パッドは、配線よりも幅が広い導体パターンで構成することができる。パッドの平面形状は特に限定されず、例えば四角形等の多角形、円形等が挙げられる。 In FIG. 1, the conductor layer 11 and the dielectric layer 12 are formed only on one side of the substrate 10, but the conductor layer 11 and the dielectric layer 12 may be formed on both sides of the substrate 10. The conductor layer 11 is arranged at least partially right above the substrate 10, that is, at a position in contact with the surface of the substrate 10, and is arranged on the surface of the dielectric layer 12 at an end 11a. The end 11 a of the conductor layer 11 may be arranged on the surface of the dielectric layer 12, and the conductor layer 11 in other portions may be in contact with the substrate 10. The conductor layer 11 may have pads for external connection and the like arranged on the upper surface of the dielectric layer 12. The pad can be formed of a conductor pattern wider than the wiring. The planar shape of the pad is not particularly limited, and examples include a polygon such as a quadrangle, a circle, and the like.
　導体層１１の端部１１ａとしては、配線等における長手方向の端部、パッド等の端部、広壁の隅部等が挙げられる。導体層１１の端部１１ａと誘電体層１２との接触面は、基板１０の面方向に対して平行でも垂直でも傾斜してもよい。 (4) Examples of the end 11a of the conductor layer 11 include a longitudinal end of a wiring or the like, an end of a pad or the like, a corner of a wide wall, and the like. The contact surface between the end 11a of the conductor layer 11 and the dielectric layer 12 may be parallel, perpendicular or inclined with respect to the plane direction of the substrate 10.
　第１実施形態の高周波受動部品１Ａの製造方法は、例えば基板１０を準備する工程と、基板１０上に所定のパターンにより誘電体層１２を形成する工程と、誘電体層１２を有する基板１０の面上に、所定のパターンにより導体層１１を構成する工程と、を有してもよい。ただし、高周波受動部品１Ａの製造方法は上記に限定されず、適宜変更可能である。 The method for manufacturing the high-frequency passive component 1A according to the first embodiment includes, for example, a step of preparing a substrate 10, a step of forming a dielectric layer 12 on the substrate 10 by a predetermined pattern, and a method of manufacturing the substrate 10 having the dielectric layer 12. Forming a conductive layer 11 with a predetermined pattern on the surface. However, the method of manufacturing the high-frequency passive component 1A is not limited to the above, and can be appropriately changed.
　基板１０を準備する工程において、例えばウエハ状をした大面積の基板１０を準備してもよい。
　誘電体層１２の所定のパターンを形成する方法としては、例えばレジストを用いたフォトリソグラフィーが挙げられる。あるいは、マスクを介して所定の材料を基板１０上に積層するマスク蒸着等を用いてもよい。大面積の基板１０を用いて受動部品を作製した場合、受動部品ごとに基板１０を切断する個片化工程を有してもよい。 In the step of preparing the substrate 10, for example, a wafer-shaped large-area substrate 10 may be prepared.
As a method of forming a predetermined pattern of the dielectric layer 12, for example, photolithography using a resist can be mentioned. Alternatively, mask vapor deposition or the like in which a predetermined material is laminated on the substrate 10 via a mask may be used. When a passive component is manufactured using the large-area substrate 10, a step of cutting the substrate 10 for each passive component may be included.
　レジストとしては、例えば、液状ネガレジスト、フィルム状ネガレジスト、液状ポジレジスト、フィルム状ポジレジストが挙げられる。レジストの形成方法としては、例えば、所定のパターンが露光されるようにマスク等を介してレジストにエネルギー線を照射して、露光した部分と露光していない部分とに化学的な差異を生じさせる。その後、露光した部分又は露光していない部分のいずれか一方を選択的に溶媒等で除去する。ネガ型の場合は露光していない部分が溶解除去され、ポジ型の場合は露光した部分が溶解除去される。エネルギー線としては、可視光線、紫外線、Ｘ線等の電磁波、電子線等の粒子線が挙げられる。 Examples of the resist include a liquid negative resist, a film negative resist, a liquid positive resist, and a film positive resist. As a method of forming the resist, for example, the resist is irradiated with energy rays through a mask or the like so that a predetermined pattern is exposed, thereby causing a chemical difference between an exposed portion and an unexposed portion. . Thereafter, either the exposed portion or the unexposed portion is selectively removed with a solvent or the like. In the case of the negative type, the unexposed portion is dissolved and removed, and in the case of the positive type, the exposed portion is dissolved and removed. Examples of energy rays include visible light, ultraviolet rays, electromagnetic waves such as X-rays, and particle beams such as electron beams.
　レジストを用いて、パターン状の誘電体層１２を形成する方法としては、例えば以下の（１）または（２）が挙げられる。
　（１）基板１０上にレジストを形成し、その上に、誘電体層１２として特定の材料層を形成する。その後、レジスト上に積層された材料層をレジストと一緒に除去して、レジストのない領域に材料層を残す（リフトオフ）。
　（２）基板１０上に、全面的に特定の材料層を形成し、その上にレジストを形成する。その後、レジストに覆われていない領域の材料層をエッチング等で除去し、さらに必要に応じて不要なレジストを除去する。エッチング法としては、適宜、ドライエッチング、ウェットエッチング等の各種から選択することができる。 As a method of forming the patterned dielectric layer 12 using a resist, for example, the following (1) or (2) can be mentioned.
(1) A resist is formed on a substrate 10, and a specific material layer is formed thereon as a dielectric layer 12. After that, the material layer laminated on the resist is removed together with the resist, leaving a material layer in a region where there is no resist (lift-off).
(2) A specific material layer is entirely formed on the substrate 10, and a resist is formed thereon. Thereafter, the material layer in a region not covered with the resist is removed by etching or the like, and unnecessary resist is further removed as necessary. The etching method can be appropriately selected from various types such as dry etching and wet etching.
　導体層１１を形成する方法としては、蒸着、スパッタ、無電解メッキ、電解メッキ、導体ペースト等が挙げられる。２種以上の導体材料又は成膜方法を併用してもよく、２種以上の導体を積層して導体層１１を構成してもよい。例えば、ガラスの表面に薄いシード層を形成した後、シード層の上に所望の厚みのメッキ層を積層してもよい。 方法 As a method of forming the conductor layer 11, there are vapor deposition, sputtering, electroless plating, electrolytic plating, conductor paste and the like. Two or more kinds of conductor materials or film forming methods may be used in combination, or two or more kinds of conductors may be laminated to form the conductor layer 11. For example, after forming a thin seed layer on the surface of glass, a plating layer having a desired thickness may be laminated on the seed layer.
（第２実施形態）
　次に、本発明に係る第２実施形態について説明するが、第１実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (2nd Embodiment)
Next, a second embodiment according to the present invention will be described, but the basic configuration is the same as that of the first embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図２に、第２実施形態の高周波受動部品１Ｂの断面構造を示す。高周波受動部品１Ｂでは、基板１０の両面（上面および下面）に、導体層１１および誘電体層１２が設けられている。基板１０が貫通孔１３ａを有し、導体層１１が貫通孔１３ａ内に配置された貫通電極１３を有する。貫通電極１３は、貫通孔１３ａ内で中空に構成されてもよく、貫通孔１３ａ内を中実に充填してもよい。貫通電極１３は、導波路、フィルタ、ダイプレクサ、方向性結合器、分配器等の受動部品（パッシブデバイス）を構成してもよい。 FIG. 2 shows a cross-sectional structure of a high-frequency passive component 1B according to the second embodiment. In the high-frequency passive component 1B, the conductor layer 11 and the dielectric layer 12 are provided on both surfaces (upper and lower surfaces) of the substrate 10. The substrate 10 has a through hole 13a, and the conductor layer 11 has a through electrode 13 arranged in the through hole 13a. The through electrode 13 may be configured to be hollow in the through hole 13a, or may fill the through hole 13a solidly. The through electrode 13 may constitute a passive component (passive device) such as a waveguide, a filter, a diplexer, a directional coupler, and a distributor.
　例えば、基板１０を構成する誘電体が、両面の導体層１１（２つの広壁１１ｃ）と貫通電極１３とで囲まれる領域を有する場合は、導波管と同様な導波路構造を構成することができる。この導波路構造は、例えばミリ波等の高周波信号（電磁波）が伝搬される高周波デバイスとして利用することができる。周波数は特に限定されないが、例えば３０～３００ＧＨｚ、６０～８０ＧＨｚ等が挙げられる。また、上述したように、導体層１１が誘電体層１２の上面に位置する外部接続用等のパッドを有してもよい。 For example, when the dielectric constituting the substrate 10 has a region surrounded by the conductor layers 11 (two wide walls 11c) on both surfaces and the through-electrode 13, a waveguide structure similar to the waveguide is formed. Can be. This waveguide structure can be used as a high-frequency device through which a high-frequency signal (electromagnetic wave) such as a millimeter wave is propagated. The frequency is not particularly limited, but is, for example, 30 to 300 GHz, 60 to 80 GHz, or the like. Further, as described above, the conductor layer 11 may have a pad for external connection or the like located on the upper surface of the dielectric layer 12.
　第２実施形態では、誘電体層１２は、基板１０上における貫通孔１３ａから離れた位置に形成されている。上側の導体層１１は、誘電体層１２の上面および側面と、誘電体層１２と貫通孔１３ａとの間の基板１０の上面と、貫通孔１３ａの内面と、にわたって形成されている。下側の導体層１１は、誘電体層１２の下面および側面と、誘電体層１２と貫通孔１３ａとの間の基板１０の下面と、貫通孔１３ａの内面と、にわたって形成されている。上側の導体層１１と下側の導体層１１とは、貫通孔１３ａの内部において接続されている。上側の導体層１１および下側の導体層１１のいずれについても、端部１１ａは、誘電体層１２の表面上に配置されている。これにより、第１実施形態と同様に、基板１０から導体層１１が剥離することを抑制することができる。 In the second embodiment, the dielectric layer 12 is formed on the substrate 10 at a position away from the through hole 13a. The upper conductive layer 11 is formed over the upper surface and side surfaces of the dielectric layer 12, the upper surface of the substrate 10 between the dielectric layer 12 and the through hole 13a, and the inner surface of the through hole 13a. The lower conductor layer 11 is formed over the lower surface and side surfaces of the dielectric layer 12, the lower surface of the substrate 10 between the dielectric layer 12 and the through hole 13a, and the inner surface of the through hole 13a. The upper conductor layer 11 and the lower conductor layer 11 are connected inside the through-hole 13a. In both the upper conductor layer 11 and the lower conductor layer 11, the end 11a is disposed on the surface of the dielectric layer 12. Thereby, similarly to the first embodiment, peeling of the conductor layer 11 from the substrate 10 can be suppressed.
　基板１０に貫通孔１３ａを形成する方法としては、ドリル等の穿孔機械、レーザ、エッチング等が挙げられる。例えば、レーザの集光照射により、ガラス等の基板１０の材料を局所的に改質した後、改質により溶解性が高くなった部分をウェットエッチングで選択的に除去する方法を用いてもよい。 方法 As a method of forming the through-hole 13a in the substrate 10, a drilling machine such as a drill, laser, etching, or the like can be used. For example, a method may be used in which the material of the substrate 10 such as glass is locally modified by condensing irradiation of a laser, and a portion having increased solubility due to the modification is selectively removed by wet etching. .
　貫通孔１３ａに貫通電極１３を形成する方法としては、蒸着、スパッタ、無電解メッキ、電解メッキ、導体ペースト等が挙げられる。２種以上の導体材料又は成膜方法を併用してもよく、２種以上の導体を積層して貫通電極１３を構成してもよい。例えば、ガラスの表面に薄いシード層を形成した後、シード層の上に所望の厚みのメッキ層を積層してもよい。貫通電極１３を形成するために、貫通孔１３ａの周囲の基板１０上に、上述のレジストを設けてもよい。 方法 As a method for forming the through electrode 13 in the through hole 13a, there are vapor deposition, sputtering, electroless plating, electrolytic plating, conductor paste and the like. Two or more kinds of conductor materials or film forming methods may be used in combination, and two or more kinds of conductors may be laminated to form the through electrode 13. For example, after forming a thin seed layer on the surface of glass, a plating layer having a desired thickness may be laminated on the seed layer. In order to form the through electrode 13, the above-described resist may be provided on the substrate 10 around the through hole 13a.
（第３実施形態）
　次に、本発明に係る第３実施形態について説明するが、第２実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Third embodiment)
Next, a third embodiment according to the present invention will be described, but the basic configuration is the same as that of the second embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図３に、第３実施形態の高周波受動部品１Ｃの断面構造を示す。高周波受動部品１Ｃでは、高周波受動部品１Ｂ（図２）の構成に加えて、導体層１１の上に、樹脂等からなる封止層１４が積層されている。封止層１４は、導体層１１の少なくとも一部を封止している。封止層１４は、例えば外部接続のための開口１４ａを有してもよい。開口１４ａにより露出した導体層１１は、外部接続用等のパッド１１ｂを有してもよい。封止層１４は、例えばオーバーコートにより構成することができる。開口１４ａは、例えばフォトリソグラフィー等のパターニングにより形成することができる。図３では、基板１０の両面に封止層１４が形成されているが、基板１０の片面のみに封止層１４が形成されてもよい。 FIG. 3 shows a cross-sectional structure of a high-frequency passive component 1C according to the third embodiment. In the high-frequency passive component 1C, in addition to the configuration of the high-frequency passive component 1B (FIG. 2), a sealing layer 14 made of resin or the like is laminated on the conductor layer 11. The sealing layer 14 seals at least a part of the conductor layer 11. The sealing layer 14 may have, for example, an opening 14a for external connection. The conductor layer 11 exposed by the opening 14a may have a pad 11b for external connection or the like. The sealing layer 14 can be composed of, for example, an overcoat. The opening 14a can be formed by patterning such as photolithography. In FIG. 3, the sealing layers 14 are formed on both surfaces of the substrate 10, but the sealing layers 14 may be formed on only one surface of the substrate 10.
（第４実施形態）
　次に、本発明に係る第４実施形態について説明するが、第１実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Fourth embodiment)
Next, a fourth embodiment according to the present invention will be described, but the basic configuration is the same as that of the first embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図４に、第４実施形態の高周波受動部品１Ｄの断面構造を示す。第１実施形態の高周波受動部品１Ａでは、図１に示すように、導体層１１の端部１１ａが、誘電体層１２の上面に配置されていた。一方、第４実施形態の高周波受動部品１Ｄでは、図４に示すように、誘電体層１２の側面に配置されている。誘電体層１２の側面は、基板１０の厚さ方向に沿って延びている。 FIG. 4 shows a cross-sectional structure of a high-frequency passive component 1D according to the fourth embodiment. In the high-frequency passive component 1A of the first embodiment, the end 11a of the conductor layer 11 is arranged on the upper surface of the dielectric layer 12, as shown in FIG. On the other hand, in the high-frequency passive component 1D of the fourth embodiment, as shown in FIG. The side surface of the dielectric layer 12 extends along the thickness direction of the substrate 10.
　高周波受動部品１Ｄでも、導体層１１の端部１１ａが、誘電体層１２の表面上に配置されている。このため、第１実施形態と同様に、基板１０から導体層１１が剥離することを抑制することができる。導体層１１の端部１１ａが位置する高さは、誘電体層１２の上面より低くてもよく、誘電体層１２の上面と同等でもよい。 で も Also in the high-frequency passive component 1D, the end 11a of the conductor layer 11 is arranged on the surface of the dielectric layer 12. For this reason, similarly to the first embodiment, the peeling of the conductor layer 11 from the substrate 10 can be suppressed. The height at which the end 11 a of the conductor layer 11 is located may be lower than the upper surface of the dielectric layer 12 or may be equal to the upper surface of the dielectric layer 12.
（第５実施形態）
　次に、本発明に係る第５実施形態について説明するが、第１実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Fifth embodiment)
Next, a fifth embodiment according to the present invention will be described, but the basic configuration is the same as that of the first embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図５に、第５実施形態１Ｅの高周波受動部品の断面構造を含む斜視図を示す。高周波受動部品１Ｅでは、導体層１１の外周部における端部１１ａが、誘電体層１２の上面に配置されている。例えば、導体層１１を構成する配線の幅方向においても、端部１１ａを、誘電体層１２の上面に配置することができる。 FIG. 5 shows a perspective view including a cross-sectional structure of the high-frequency passive component of the fifth embodiment 1E. In the high-frequency passive component 1 </ b> E, the end 11 a in the outer peripheral portion of the conductor layer 11 is arranged on the upper surface of the dielectric layer 12. For example, the end 11a can be arranged on the upper surface of the dielectric layer 12 also in the width direction of the wiring forming the conductor layer 11.
（第６実施形態）
　次に、本発明に係る第６実施形態について説明するが、第１実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Sixth embodiment)
Next, a sixth embodiment according to the present invention will be described, but the basic configuration is the same as that of the first embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図６に、第６実施形態の高周波受動部品１Ｆの断面構造を示す。高周波受動部品１Ｆでは、第２実施形態において言及した導波路構造と同様の導波路構造２１が基板１０に形成されている。基板１０としては、例えば、ガラス基板、サファイア基板、石英基板等の誘電体基板、単結晶基板、複合基板等が挙げられる。導波路構造２１は、少なくとも、基板１０の両面に形成される導体層１１からなる２つの広壁１１ｃ及び複数の貫通電極１３を備える。各貫通電極１３は、２つの広壁１１ｃ同士を接続している。導波路構造２１の外側の領域２２は、基板１０において導波領域２０を除いた外側の領域である。 FIG. 6 shows a cross-sectional structure of a high-frequency passive component 1F according to the sixth embodiment. In the high-frequency passive component 1F, a waveguide structure 21 similar to the waveguide structure mentioned in the second embodiment is formed on the substrate 10. Examples of the substrate 10 include a dielectric substrate such as a glass substrate, a sapphire substrate, and a quartz substrate, a single crystal substrate, and a composite substrate. The waveguide structure 21 includes at least two wide walls 11 c formed of the conductor layers 11 formed on both surfaces of the substrate 10 and a plurality of through electrodes 13. Each through electrode 13 connects the two wide walls 11c. A region 22 outside the waveguide structure 21 is a region outside the substrate 10 excluding the waveguide region 20.
　上側の導体層１１および下側の導体層１１の少なくとも一方には、誘電体層１５が積層されている。誘電体層１５上には上部導体層１６が設けられてもよい。誘電体層１５は、誘電体層１２とは異なる位置に設けられる第２の誘電体層である。上部導体層１６は、導体層１１とは異なる位置に設けられる第２の導体層である。高周波受動部品１Ｆにおいては、導体層１１の外周部における端部１１ａが誘電体層１２に接していればよい。図６に示す例では、導体層１１の端部１１ａは、誘電体層１２の上面に配置されている。上部導体層１６は、基板１０に接していない。図６に示す例では、誘電体層１５及び上部導体層１６が導波路構造２１の範囲内で形成されている。ただし、特にこれに限定されるものではなく、誘電体層１５及び上部導体層１６が導波路構造２１の外側の領域２２まで形成されてもよい。 誘 電 A dielectric layer 15 is laminated on at least one of the upper conductor layer 11 and the lower conductor layer 11. An upper conductor layer 16 may be provided on the dielectric layer 15. The dielectric layer 15 is a second dielectric layer provided at a different position from the dielectric layer 12. The upper conductor layer 16 is a second conductor layer provided at a position different from that of the conductor layer 11. In the high-frequency passive component 1 </ b> F, the end 11 a in the outer peripheral portion of the conductor layer 11 may be in contact with the dielectric layer 12. In the example shown in FIG. 6, the end 11a of the conductor layer 11 is disposed on the upper surface of the dielectric layer 12. The upper conductor layer 16 is not in contact with the substrate 10. In the example shown in FIG. 6, the dielectric layer 15 and the upper conductor layer 16 are formed within the range of the waveguide structure 21. However, the present invention is not particularly limited to this, and the dielectric layer 15 and the upper conductor layer 16 may be formed up to the region 22 outside the waveguide structure 21.
（第７実施形態）
　次に、本発明に係る第７実施形態について説明するが、第６実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Seventh embodiment)
Next, a seventh embodiment according to the present invention will be described, but the basic configuration is the same as that of the sixth embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図７に、第７実施形態の高周波受動部品１Ｇの断面構造を示す。高周波受動部品１Ｇでは、高周波受動部品１Ｆ（図６）の構成に加えて、導波領域２０における導体層１１に開口２３が形成されている。これにより、開口２３を通して導波領域２０のモードと外部のモードとを変換することができる。開口２３の位置は、導体層１１に誘電体層１５が積層される部分でもよく、それ以外の位置でもよい。 FIG. 7 shows a cross-sectional structure of a high-frequency passive component 1G according to the seventh embodiment. In the high-frequency passive component 1G, an opening 23 is formed in the conductor layer 11 in the waveguide region 20 in addition to the configuration of the high-frequency passive component 1F (FIG. 6). Thereby, the mode of the waveguide region 20 and the mode of the outside can be converted through the opening 23. The position of the opening 23 may be a portion where the dielectric layer 15 is laminated on the conductor layer 11, or may be another position.
　第７実施形態では、導体層１１の端部１１ａが導波路構造２１の外側の領域２２における外周部及び開口２３の周囲に位置している。いずれの端部１１ａも、誘電体層１２の表面上に配置されている。第７実施形態においても、第１実施形態で説明したのと同様に、導体層１１の端部１１ａを誘電体層１２の表面上に配置することで、導体層１１の端部１１ａが基板１０に接しなくなる。そして、誘電体層１２が応力緩和層として機能し、導体層１１の端部１１ａの剥離が抑制できる。 In the seventh embodiment, the end 11 a of the conductor layer 11 is located at the outer periphery of the region 22 outside the waveguide structure 21 and around the opening 23. Both ends 11 a are arranged on the surface of the dielectric layer 12. Also in the seventh embodiment, the end 11a of the conductor layer 11 is disposed on the surface of the dielectric layer 12 in the same manner as described in the first embodiment, so that the end 11a of the conductor layer 11 is Will not be in contact with Then, the dielectric layer 12 functions as a stress relieving layer, and peeling of the end 11a of the conductor layer 11 can be suppressed.
（第８実施形態）
　次に、本発明に係る第８実施形態について説明するが、第７実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Eighth embodiment)
Next, an eighth embodiment according to the present invention will be described, but the basic configuration is the same as that of the seventh embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図８に、第８実施形態の高周波受動部品１Ｈの断面構造を示す。高周波受動部品１Ｈでは、高周波受動部品１Ｇ（図７）の構成に加えて、導体層１１と上部導体層１６との間を接続するようにビア１７が設けられている。ビア１７は、誘電体層１５を貫通する導体である。ビア１７により、導体層１１と上部導体層１６との間を電気的に接続することができる。ビア１７の形状、個数、位置等は特に限定されず、ビア１７の個数は必要に応じて１つでも２つ以上でもよい。上部導体層１６が２つ以上に分離された導体パターンを有する場合は、導体パターンごとに１つ以上のビア１７を設けてもよい。上部導体層１６が導体層１１との接続を要しない導体パターン（例えばダミーパターン）を有する場合は、その導体パターンに対するビア１７を省略してもよい。 FIG. 8 shows a cross-sectional structure of a high-frequency passive component 1H according to the eighth embodiment. In the high-frequency passive component 1H, in addition to the configuration of the high-frequency passive component 1G (FIG. 7), a via 17 is provided so as to connect between the conductor layer 11 and the upper conductor layer 16. The via 17 is a conductor penetrating the dielectric layer 15. Via 17 allows electrical connection between conductor layer 11 and upper conductor layer 16. The shape, number, position, and the like of the vias 17 are not particularly limited, and the number of vias 17 may be one or two or more as necessary. When the upper conductor layer 16 has two or more separated conductor patterns, one or more vias 17 may be provided for each conductor pattern. When the upper conductor layer 16 has a conductor pattern that does not require connection with the conductor layer 11 (for example, a dummy pattern), the via 17 for the conductor pattern may be omitted.
（第９実施形態）
　次に、本発明に係る第９実施形態について説明するが、第８実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Ninth embodiment)
Next, a ninth embodiment according to the present invention will be described, but the basic configuration is the same as that of the eighth embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図９に、第９実施形態の高周波受動部品１Ｉの断面構造を示す。高周波受動部品１Ｉでは、高周波受動部品１Ｈ（図８）の構成に加えて、モード変換部１８を有している。モード変換部１８は、導波領域２０における基板１０を貫通しない導体（ブラインドビア）を含んでいる。モード変換部１８は、ビア１７を介して上部導体層１６と電気的に接続される。これにより、上部導体層１６に電気信号の伝送路を設けた場合に、上部導体層１６の伝送路と導波路構造２１の導波領域２０との間で、信号を伝搬させることができる。 FIG. 9 shows a cross-sectional structure of the high-frequency passive component 1I of the ninth embodiment. The high-frequency passive component 1I has a mode converter 18 in addition to the configuration of the high-frequency passive component 1H (FIG. 8). The mode converter 18 includes a conductor (blind via) that does not penetrate the substrate 10 in the waveguide region 20. The mode converter 18 is electrically connected to the upper conductor layer 16 via the via 17. Thus, when the transmission path of the electric signal is provided in the upper conductor layer 16, the signal can be propagated between the transmission path of the upper conductor layer 16 and the waveguide region 20 of the waveguide structure 21.
　例えば、上部導体層１６から伝搬した信号を、モード変換部１８を介して導波路構造２１の導波領域２０に伝搬させることができる。また、導波路構造２１の導波領域２０を伝搬した信号を、モード変換部１８を介して上部導体層１６の伝送路に伝搬させることができる。モード変換部１８と上部導体層１６とを接続するビア１７は、略円筒状であってもよいし、略円柱状であってもよい。ビア１７を介してモード変換部１８と接続される上部導体層１６と、ビア１７を介して導体層１１と接続される上部導体層１６とは、互いに分離された導体パターンであってもよい。 For example, a signal propagated from the upper conductor layer 16 can be propagated to the waveguide region 20 of the waveguide structure 21 via the mode converter 18. Further, a signal that has propagated through the waveguide region 20 of the waveguide structure 21 can be propagated to the transmission path of the upper conductor layer 16 via the mode converter 18. The via 17 connecting the mode converter 18 and the upper conductor layer 16 may be substantially cylindrical or substantially columnar. The upper conductor layer 16 connected to the mode converter 18 via the via 17 and the upper conductor layer 16 connected to the conductor layer 11 via the via 17 may be separate conductor patterns.
　モード変換部１８を構成する導体層が基板１０の面に沿って延在する部分の端部１８ａは、開口２３における基板１０の上に形成された誘電体層１２に配置されている。これにより、モード変換部１８を構成する導体層が基板１０から剥離することを抑制することができる。モード変換部１８を構成する導体層の平面形状は、例えば円形状が挙げられる。モード変換部１８を構成する導体層の端部１８ａが配置された誘電体層１２と導体層１１の端部１１ａが配置された誘電体層１２との間の開口２３の平面形状は、例えば円環状であってもよい。 The end 18 a of the portion where the conductor layer constituting the 変 換 mode conversion portion 18 extends along the surface of the substrate 10 is disposed in the dielectric layer 12 formed on the substrate 10 in the opening 23. Thereby, it is possible to prevent the conductor layer forming the mode conversion unit 18 from peeling off from the substrate 10. The plane shape of the conductor layer forming the mode converter 18 is, for example, a circular shape. The planar shape of the opening 23 between the dielectric layer 12 on which the end 18a of the conductor layer constituting the mode converter 18 is disposed and the dielectric layer 12 on which the end 11a of the conductor layer 11 is disposed is, for example, a circle. It may be annular.
（第１０実施形態）
　次に、本発明に係る第１０実施形態について説明するが、第７実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Tenth embodiment)
Next, a tenth embodiment according to the present invention will be described, but the basic configuration is the same as that of the seventh embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図１０に、第１０実施形態の高周波受動部品１Ｊの断面構造を示す。高周波受動部品１Ｊでは、高周波受動部品１Ｇ（図７）と異なり、導波路構造２１の外側の領域２２における導体層１１の外周部１１ｅが基板１０に接するように配置されている。この外周部１１ｅが上部導体層１６に覆われている。上部導体層１６が、広壁１１ｃを構成する導体層１１の外周部１１ｅを覆っているため、導体層１１の外周部１１ｅの剥離も抑制できる。 FIG. 10 shows a cross-sectional structure of the high-frequency passive component 1J according to the tenth embodiment. In the high-frequency passive component 1J, unlike the high-frequency passive component 1G (FIG. 7), the outer peripheral portion 11e of the conductor layer 11 in the region 22 outside the waveguide structure 21 is arranged so as to be in contact with the substrate 10. The outer peripheral portion 11e is covered with the upper conductor layer 16. Since the upper conductor layer 16 covers the outer peripheral portion 11e of the conductor layer 11 forming the wide wall 11c, the peeling of the outer peripheral portion 11e of the conductor layer 11 can also be suppressed.
　導波路構造２１の外側の領域２２における上部導体層１６の外周部の端部１６ａは、導体層１１の外側に形成された誘電体層１５に設けられている。図１０に示す例では、上部導体層１６は、導体層１１の外側に形成された誘電体層１５と、導体層１１の外側に形成された誘電体層１５及び導体層１１の間の基板１０上と、導体層１１と、導体層１１上に形成された誘電体層１５と、にわたって形成されている。 端 The end 16 a of the outer peripheral portion of the upper conductor layer 16 in the region 22 outside the waveguide structure 21 is provided on the dielectric layer 15 formed outside the conductor layer 11. In the example shown in FIG. 10, the upper conductor layer 16 includes a dielectric layer 15 formed outside the conductor layer 11 and a substrate 10 between the dielectric layer 15 formed outside the conductor layer 11 and the conductor layer 11. It is formed over the top, the conductor layer 11, and the dielectric layer 15 formed on the conductor layer 11.
　導波路構造２１の外側の領域２２における上部導体層１６の端部１６ａを導体層１１の外側に形成された誘電体層１５の表面上に配置することで、端部１６ａが基板１０に接しなくなる。そして、導体層１１の外側に形成された誘電体層１５が応力緩和層として機能し、導波路構造２１の外側の領域２２における上部導体層１６の端部１６ａの剥離を抑制できる。 By disposing the end 16 a of the upper conductor layer 16 in the region 22 outside the waveguide structure 21 on the surface of the dielectric layer 15 formed outside the conductor layer 11, the end 16 a does not contact the substrate 10 . Then, the dielectric layer 15 formed outside the conductor layer 11 functions as a stress relieving layer, and the exfoliation of the end 16a of the upper conductor layer 16 in the region 22 outside the waveguide structure 21 can be suppressed.
（第１１実施形態）
　次に、本発明に係る第１１実施形態について説明するが、第７実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Eleventh embodiment)
Next, an eleventh embodiment according to the present invention will be described, but the basic configuration is the same as that of the seventh embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図１１に、第１１実施形態の高周波受動部品１Ｋの断面構造を示す。高周波受動部品１Ｋでは、高周波受動部品１Ｇ（図７）の構成に加えて、樹脂等からなる封止層１９が積層されている。封止層１９は、例えば外部接続のための開口１９ａを有してもよい。図１１に示す例では、封止層１９の開口１９ａが上部導体層１６の一部に通じている。開口１９ａを通じて露出した上部導体層１６は、外部接続用のパッドであってもよい。 FIG. 11 shows a cross-sectional structure of a high-frequency passive component 1K according to the eleventh embodiment. In the high-frequency passive component 1K, a sealing layer 19 made of resin or the like is laminated in addition to the configuration of the high-frequency passive component 1G (FIG. 7). The sealing layer 19 may have, for example, an opening 19a for external connection. In the example shown in FIG. 11, the opening 19a of the sealing layer 19 communicates with a part of the upper conductor layer 16. The upper conductor layer 16 exposed through the opening 19a may be a pad for external connection.
　特に図示しないが、導波路構造２１の外側の領域２２において導体層１１の一部に通じる開口を封止層１９に設けてもよく、その開口を通じて露出する導体層１１が、外部接続用のパッドであってもよい。第１１実施形態の封止層１９及び開口１９ａは、第３実施形態の封止層１４及び開口１４ａと同様の方法で形成することができる。 Although not particularly shown, an opening communicating with a part of the conductor layer 11 in a region 22 outside the waveguide structure 21 may be provided in the sealing layer 19, and the conductor layer 11 exposed through the opening is formed with a pad for external connection. It may be. The sealing layer 19 and the opening 19a of the eleventh embodiment can be formed by the same method as the sealing layer 14 and the opening 14a of the third embodiment.
（第１２実施形態）
　次に、本発明に係る第１２実施形態について説明するが、第６実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Twelfth embodiment)
Next, a twelfth embodiment according to the present invention will be described, but the basic configuration is the same as that of the sixth embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図１２に、第１２実施形態の高周波受動部品１Ｌの断面構造を示す。高周波受動部品１Ｌでは、高周波受動部品１Ｆ（図６）の構成に加えて、導波領域２０における導体層１１に開口２３が形成されている。これにより、開口２３を通して導波領域２０のモードと外部のモードとを変換することができる。また、高周波受動部品１Ｌでは、基板１０の両面に導体層１１及び誘電体層１２が形成され、導体層１１の端部１１ａが誘電体層１２に配置されている。 FIG. 12 shows a cross-sectional structure of a high-frequency passive component 1L according to the twelfth embodiment. In the high-frequency passive component 1L, an opening 23 is formed in the conductor layer 11 in the waveguide region 20 in addition to the configuration of the high-frequency passive component 1F (FIG. 6). Thereby, the mode of the waveguide region 20 and the mode of the outside can be converted through the opening 23. In the high-frequency passive component 1L, the conductor layer 11 and the dielectric layer 12 are formed on both surfaces of the substrate 10, and the end 11a of the conductor layer 11 is disposed on the dielectric layer 12.
　高周波受動部品１Ｌにおいても、第１実施形態で説明したのと同様に、導体層１１の端部１１ａを誘電体層１２の表面上に配置することで、導体層１１の端部１１ａが基板１０に接しなくなる。そして、誘電体層１２が応力緩和層として機能し、導体層１１の端部１１ａの剥離が抑制できる。また、基板１０の両面の導体層１１が貫通電極１３を通じて接続されている場合に、各導体層１１の端部１１ａを誘電体層１２に配置することで、基板１０の反りを低減するとともに、導体層１１の端部１１ａの剥離を抑制する効果を高めることができる。 In the high-frequency passive component 1L, as described in the first embodiment, the end 11a of the conductor layer 11 is arranged on the surface of the dielectric layer 12 so that the end 11a of the conductor layer 11 is Will not be in contact with Then, the dielectric layer 12 functions as a stress relieving layer, and peeling of the end 11a of the conductor layer 11 can be suppressed. When the conductor layers 11 on both surfaces of the substrate 10 are connected through the through electrodes 13, the end 11 a of each conductor layer 11 is arranged on the dielectric layer 12, thereby reducing the warpage of the substrate 10. The effect of suppressing separation of the end 11a of the conductor layer 11 can be enhanced.
（第１３実施形態）
　次に、本発明に係る第１３実施形態について説明するが、第１２実施形態と基本的な構成は同様である。このため、同様の構成には同一の符号を付してその説明は省略し、異なる点についてのみ説明する。 (Thirteenth embodiment)
Next, a thirteenth embodiment according to the present invention will be described, but the basic configuration is the same as that of the twelfth embodiment. For this reason, the same components are denoted by the same reference numerals, and description thereof will be omitted. Only different points will be described.
　図１３に、第１３実施形態の高周波受動部品１Ｍの断面構造を示す。高周波受動部品１Ｍでは、高周波受動部品１Ｌ（図１２）の構成に加えて、樹脂等からなる封止層１９が、基板１０の両面に積層されている。封止層１９は、１つまたは複数の開口１９ａを有している。封止層１９の開口１９ａは、導体層１１の一部に通じる位置と、上部導体層１６の一部に通じる位置とのいずれにも設けることができる。開口１９ａにより露出した導体層１１は、外部接続用等のパッド１１ｂを有してもよい。 FIG. 13 shows a cross-sectional structure of a high-frequency passive component 1M according to the thirteenth embodiment. In the high-frequency passive component 1M, in addition to the configuration of the high-frequency passive component 1L (FIG. 12), a sealing layer 19 made of resin or the like is laminated on both surfaces of the substrate 10. The sealing layer 19 has one or a plurality of openings 19a. The opening 19a of the sealing layer 19 can be provided at both a position communicating with a part of the conductor layer 11 and a position communicating with a part of the upper conductor layer 16. The conductor layer 11 exposed by the opening 19a may have a pad 11b for external connection or the like.
　以上、本発明を好適な実施形態に基づいて説明してきたが、本発明は上述の実施形態に限定されず、本発明の要旨を逸脱しない範囲で種々の改変が可能である。改変としては、各実施形態における構成要素の追加、置換、省略、その他の変更が挙げられる。また、２以上の実施形態に用いられた構成要素を適宜組み合わせることも可能である。つまり、高周波受動部品１Ａ～１Ｍの構成要素を適宜組み合わせてもよい。 Although the present invention has been described based on the preferred embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present invention. Modifications include addition, substitution, omission, and other changes of the components in each embodiment. Also, the components used in two or more embodiments can be appropriately combined. That is, the components of the high-frequency passive components 1A to 1M may be appropriately combined.
　導体層１１及び貫通電極１３から構成される導波路構造２１として、例えばポスト壁導波路が挙げられる。ポスト壁導波路を構成する基板１０の両面には、例えばグランド電位に接続された広壁１１ｃが設けられてもよい。 ポ ス ト As the waveguide structure 21 composed of the conductor layer 11 and the through electrode 13, for example, a post wall waveguide can be mentioned. A wide wall 11c connected to, for example, a ground potential may be provided on both surfaces of the substrate 10 forming the post wall waveguide.
　また、多数の貫通電極１３を並べることで、導波路構造２１を囲む壁部を構成することができる。貫通電極１３から構成される壁部としては、導波路構造２１の幅方向に対向する狭壁、長手方向の端部に設けられるショート壁、その他の側壁等が挙げられる。壁部を構成する貫通電極１３の形状は、円柱形状等の導体柱（ポスト）に限定されず、例えば、壁部に沿って連続した形状、隅部に沿って連続した形状等を採用することもできる。また、貫通電極１３の配列も、受動部品の機能等に応じて種々の構成が可能である。例えば、貫通電極１３が等間隔に配置された部分、貫通電極１３の間隔が不均等の部分、貫通電極１３が所定の区間に渡り配置されていない部分等を設けてもよい。 (4) By arranging a large number of through electrodes 13, a wall surrounding the waveguide structure 21 can be formed. Examples of the wall formed by the through electrode 13 include a narrow wall facing the width direction of the waveguide structure 21, a short wall provided at an end in the longitudinal direction, and other side walls. The shape of the through electrode 13 forming the wall is not limited to a conductor pillar (post) having a cylindrical shape or the like. For example, a shape continuous along the wall, a shape continuous along the corner, or the like may be employed. You can also. Also, various arrangements of the arrangement of the through electrodes 13 are possible according to the function of the passive component and the like. For example, a portion where the through electrodes 13 are arranged at equal intervals, a portion where the intervals between the through electrodes 13 are uneven, a portion where the through electrodes 13 are not arranged over a predetermined section, or the like may be provided.
　上述の実施形態に係る高周波受動部品１Ａ～１Ｍにおいては、同一の基板１０に複数の部品が構成されてもよい。基板１０に構成される他の部品は、高周波用の受動部品に限らず、他の受動部品や能動部品等を含んでもよい。部品をモジュール化することにより、高周波モジュールを構成することもできる。本実施形態の高周波モジュールは、例えば、上述の高周波受動部品を備えるモジュールである。モジュールには、機能に必要な種々の部品を組み込むことができる。 In the high-frequency passive components 1A to 1M according to the above-described embodiment, a plurality of components may be configured on the same substrate 10. The other components configured on the substrate 10 are not limited to high frequency passive components, and may include other passive components, active components, and the like. By modularizing the components, a high-frequency module can be configured. The high-frequency module of the present embodiment is, for example, a module including the above-described high-frequency passive component. Various components necessary for the function can be incorporated in the module.
１Ａ～１Ｍ…高周波受動部品、１０…基板、１１…導体層、１１ａ…導体層の端部、１１ｂ…パッド、１１ｃ…広壁、１２…誘電体層、１３…貫通電極、１３ａ…貫通孔、１４，１９…封止層、１５…第２の誘電体層、１６…上部導体層（第２の導体層）、２０…導波領域、２１…導波路構造 1A to 1M: high-frequency passive component, 10: substrate, 11: conductor layer, 11a: end of conductor layer, 11b: pad, 11c: wide wall, 12: dielectric layer, 13: through electrode, 13a: through hole, 14, 19: sealing layer, 15: second dielectric layer, 16: upper conductor layer (second conductor layer), 20: waveguide region, 21: waveguide structure

Claims (6)

  1. 　誘電体によって形成された基板と、
    　前記基板に接する導体層と、
    　前記基板上に形成された誘電体層と、を備え、
    　前記導体層の端部が、前記誘電体層の表面上に配置されている、高周波受動部品。     A substrate formed by a dielectric;
    A conductor layer in contact with the substrate,
    A dielectric layer formed on the substrate,
    A high-frequency passive component, wherein an end of the conductor layer is disposed on a surface of the dielectric layer.
  2. 　前記基板が貫通孔を有し、
    　前記導体層が前記貫通孔内に配置された貫通電極を有する、請求項１に記載の高周波受動部品。     The substrate has a through hole,
    The high-frequency passive component according to claim 1, wherein the conductor layer has a through electrode disposed in the through hole.
  3. 　前記導体層が、前記誘電体層の上面に位置するパッドを有する、請求項１又は２に記載の高周波受動部品。 3. The high-frequency passive component according to claim 1, wherein the conductor layer has a pad located on an upper surface of the dielectric layer.
  4. 　前記導体層の少なくとも一部を封止する、樹脂により形成された封止層をさらに備える、請求項１～３のいずれか１項に記載の高周波受動部品。 The high-frequency passive component according to any one of claims 1 to 3, further comprising a sealing layer formed of a resin, which seals at least a part of the conductor layer.
  5. 　前記基板の両面に形成された広壁及び前記広壁同士を接続する貫通電極により導波領域を囲むように構成される導波路構造を有している、請求項１～４のいずれか１項に記載の高周波受動部品。 5. The semiconductor device according to claim 1, further comprising a waveguide structure configured to surround the waveguide region by wide walls formed on both surfaces of the substrate and through electrodes connecting the wide walls to each other. 2. The high-frequency passive component according to item 1.
  6. 　少なくとも前記広壁のいずれか一方には第２の誘電体層が積層され、前記第２の誘電体層には第２の導体層が積層されている、請求項５に記載の高周波受動部品。 The high-frequency passive component according to claim 5, wherein a second dielectric layer is laminated on at least one of the wide walls, and a second conductor layer is laminated on the second dielectric layer.
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JP2004297373A (en) * 2003-03-26 2004-10-21 Kyocera Corp Connection structure of dielectric waveguide line and high frequency transmission line
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JP2014075543A (en) * 2012-10-05 2014-04-24 Tyco Electronics Japan Kk Glass wiring plate
JP2015076836A (en) * 2013-10-11 2015-04-20 株式会社フジクラ Waveguide substrate
JP2016156728A (en) * 2015-02-25 2016-09-01 京セラ株式会社 Sensor substrate and detector

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223395A (en) * 1990-12-26 1992-08-13 Fujitsu Ltd Thin film forming board
JPH0494779U (en) * 1991-01-16 1992-08-17
JP2004297373A (en) * 2003-03-26 2004-10-21 Kyocera Corp Connection structure of dielectric waveguide line and high frequency transmission line
JP2011003805A (en) * 2009-06-19 2011-01-06 Olympus Corp Method of manufacturing wiring board and wiring board
WO2012132880A1 (en) * 2011-03-25 2012-10-04 株式会社村田製作所 Multilayer ceramic substrate
JP2014075543A (en) * 2012-10-05 2014-04-24 Tyco Electronics Japan Kk Glass wiring plate
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