WO2020009095A1 - Ni-based alloy for seed layer in magnetic recording medium - Google Patents

Ni-based alloy for seed layer in magnetic recording medium Download PDF

Info

Publication number
WO2020009095A1
WO2020009095A1 PCT/JP2019/026240 JP2019026240W WO2020009095A1 WO 2020009095 A1 WO2020009095 A1 WO 2020009095A1 JP 2019026240 W JP2019026240 W JP 2019026240W WO 2020009095 A1 WO2020009095 A1 WO 2020009095A1
Authority
WO
WIPO (PCT)
Prior art keywords
based alloy
seed layer
less
content
magnetic recording
Prior art date
Application number
PCT/JP2019/026240
Other languages
French (fr)
Japanese (ja)
Inventor
優衣 田中
慶明 松原
Original Assignee
山陽特殊製鋼株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 山陽特殊製鋼株式会社 filed Critical 山陽特殊製鋼株式会社
Publication of WO2020009095A1 publication Critical patent/WO2020009095A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy

Definitions

  • the present invention relates to a Ni-based alloy for a seed layer of a magnetic recording medium, a sputtering target containing the alloy, and a magnetic recording medium having a seed layer containing the alloy.
  • ⁇ Media adopting the in-plane magnetic recording system has become widespread.
  • a medium (perpendicular magnetic recording medium) employing a perpendicular magnetic recording system is becoming widespread.
  • the axis of easy magnetization is oriented perpendicular to the medium surface in the magnetic film. This perpendicular magnetic recording medium is suitable for high recording density.
  • the perpendicular magnetic recording medium has a magnetic recording layer and a soft magnetic layer.
  • the perpendicular magnetic recording medium further has a seed layer, a base film layer, and the like between the magnetic recording layer and the soft magnetic layer.
  • JP 2009-155722 A discloses a seed layer made of a NiW-based alloy. This seed layer can contribute to miniaturization of the magnetic recording layer.
  • Japanese Patent Application Laid-Open No. 2012-128933 discloses a seed layer target whose material is a Ni-Fe-Co-M alloy. This alloy contains W, Mo, Ta, Cr, V or Nb as the element M. This target contributes to the orientation of the seed layer to the (111) plane.
  • JP-A-2017-191625 discloses a seed layer target whose material is a Ni-Fe-Co-M alloy.
  • This alloy contains a noble metal (Au, Ag, Pd, Rh, Ir, Ru, Re or Pt) as the element M.
  • This target contributes to the orientation of the seed layer to the (111) plane.
  • JP-A-2013-073635 discloses an alloy to which a rare earth is added as a material of a sputtering target.
  • the soft magnetic layer of the perpendicular magnetic recording medium is formed from this target.
  • An object of the present invention is to provide a Ni-based alloy for a seed layer capable of obtaining a seed layer having high orientation to a (111) plane and a fine crystal grain size, a sputtering target containing the alloy, and Another object of the present invention is to provide a magnetic recording medium having a seed layer.
  • Ni-based alloy for the seed layer of the magnetic recording medium according to the present invention includes La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, and Tb. , Dy, Ho, Er, Tm, Yb, and Lu.
  • the content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less.
  • Ni content: Fe content: Co the ratio of the Ni content (at%), the Fe content (at%), and the Co content (at%) is defined as Ni content: Fe content: Co.
  • ⁇ : ⁇ : ⁇ (where ⁇ + ⁇ + ⁇ 100), ⁇ is 15 or more and 100 or less, ⁇ is 0 or more and 60 or less, and ⁇ is 0 or more and 70 or less. preferable.
  • Ni-based alloy according to the present invention preferably further contains Fe and / or Co.
  • Ni-based alloy according to the present invention preferably further contains one or more elements M1 selected from the group consisting of Ru, Re, W, Mo and Ta.
  • the content of the element M1 in the Ni-based alloy according to the present invention is preferably 25 at% or less.
  • Ni-based alloy according to the present invention preferably further contains one or more elements M2 selected from the group consisting of Al, Si, B and C.
  • the content of M2 in the Ni-based alloy according to the present invention is preferably 10 at% or less.
  • a sputtering target according to the present invention includes the Ni-based alloy according to the present invention. That is, the material of the sputtering target according to the present invention is the Ni-based alloy according to the present invention.
  • the Ni-based alloy according to the present invention is one or two selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Contains the above element RE.
  • the content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less.
  • a magnetic recording medium has a seed layer containing the Ni-based alloy according to the present invention.
  • This seed layer is preferably obtained by sputtering using the sputtering target according to the present invention.
  • the material of the target according to the present invention is preferably the Ni-based alloy according to the present invention.
  • the Ni-based alloy according to the present invention is one or two selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Contains the above element RE.
  • the content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less.
  • the Ni-based alloy according to the present invention can provide a seed layer having high orientation to the (111) plane and a fine crystal grain size.
  • the Ni-based alloy according to the present invention can contribute to a high recording density of a magnetic storage medium.
  • Ni and (2) Contains one or more elements RE selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. .
  • the content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less.
  • the “content of the element RE” means a total content of the two or more kinds of elements RE.
  • the composition of the Ni-based alloy according to the present invention is: One or more elements RE: 1 at% or more and 10 at% or less, and Ni and unavoidable impurities: the balance.
  • Ni has an fcc structure.
  • Element RE can change the preferred orientation of the fcc structure from (200) to (111), although the mechanism is not clear.
  • a seed layer excellent in orientation to the (111) plane can be obtained from an alloy in which the element RE is added to Ni. With this seed layer, a high recording density in a perpendicular magnetic recording medium can be achieved.
  • the content of the element RE in the Ni-based alloy according to the present invention is preferably at least 1 at%, more preferably at least 2 at%. Excess element RE shifts the seed layer to a structure other than the fcc structure. From the viewpoint that the seed layer can maintain the fcc structure, the content of the element RE is preferably equal to or less than 10 at%, and more preferably equal to or less than 5 at%.
  • NiThe Ni-based alloy according to the present invention may further contain Fe and / or Co.
  • the Ni-based alloy according to the present invention contains neither Fe nor Co, contains Fe, contains no Co, contains Co, contains no Fe, and contains both Fe and Co. Embodiments.
  • ⁇ is preferably 15 or more and 100 or less.
  • a seed layer in which the coercive force is suppressed can be obtained by using a Ni-based alloy in which ⁇ is 15 or more.
  • ⁇ is more preferably 20 or more, still more preferably 25 or more, still more preferably 30 or more, even more preferably 40 or more, still more preferably 50 or more, and even more preferably 60 or more.
  • ⁇ is preferably 0 or more and 60 or less.
  • a seed layer in which the coercive force is suppressed can be obtained by the Ni-based alloy having ⁇ in this range.
  • ⁇ is more preferably 2 or more, still more preferably 5 or more, and still more preferably 10 or more.
  • ⁇ is more preferably 50 or less, and still more preferably 40 or less.
  • ⁇ is preferably from 0 to 70. With a Ni-based alloy having ⁇ within this range, a seed layer in which the coercive force in the (111) direction is suppressed can be obtained. From the same viewpoint, ⁇ is more preferably 2 or more, still more preferably 5 or more, and still more preferably 10 or more. From the same viewpoint, ⁇ is more preferably 60 or less, still more preferably 40 or less, and even more preferably 30 or less.
  • ⁇ is preferably 40 or more and less than 100, and ⁇ is more than 0 and 60 or less. In this case, ⁇ is 0.
  • ⁇ is preferably 30 or more and less than 100, and ⁇ is more than 0 and 70 or less. In this case, ⁇ is 0.
  • ⁇ is preferably 15 or more and less than 100, ⁇ is more than 0 and 60 or less, and ⁇ is preferably more than 0 and 70 or less.
  • the composition of the Ni-based alloy according to the present invention is: One or more elements RE: 1 at% to 10 at%, Ni, Fe and / or Co, and inevitable impurities: balance.
  • NiThe Ni-based alloy according to the present invention may further contain one or more elements M1 selected from the group consisting of Ru, Re, W, Mo and Ta. From a Ni-based alloy containing the element M1, a seed layer having excellent orientation to the (111) plane can be obtained. Further, a seed layer having a fine crystal grain size can be obtained from a Ni-based alloy containing the element M1. With this seed layer, a high recording density in a perpendicular magnetic recording medium can be achieved.
  • the content of the element M1 is preferably at least 1 at%, particularly preferably at least 2 at%.
  • the excess element M1 shifts the seed layer to a structure other than the fcc structure. Furthermore, the excess element M1 may cause the seed layer to become amorphous.
  • the content of the element M1 is preferably equal to or less than 20 at%, and particularly preferably equal to or less than 10 at%.
  • "content of element M1" means the total content of the two or more elements M1.
  • the composition of the Ni-based alloy according to the present invention is: One or more elements RE: 1 at% or more and 10 at% or less; One or more elements M1: 20 at% or less, Ni, Fe and / or Co, and inevitable impurities: balance.
  • NiThe Ni-based alloy according to the present invention may further contain one or more elements M2 selected from the group consisting of Al, Si, B and C.
  • a seed layer having excellent orientation to the (111) plane can be obtained from a Ni-based alloy containing the element M2.
  • a seed layer having a fine crystal grain size can be obtained from a Ni-based alloy containing the element M2. With this seed layer, a high recording density in a perpendicular magnetic recording medium can be achieved.
  • the content of element M2 is preferably at least 1 at%, particularly preferably at least 2 at%. Excessive element M2 may cause the seed layer to become amorphous.
  • the content of the element M2 is preferably 5 at% or less from the viewpoint that the seed layer is unlikely to be made amorphous.
  • the total of the content of the element M1 and the content of the element M2 is preferably at least 1 at%, particularly preferably at least 2 at%. From the viewpoint that the seed layer is unlikely to become amorphous, the total of the content of the element M1 and the content of the element M2 is preferably 20 at% or less, and particularly preferably 15 at% or less.
  • the composition of the Ni-based alloy according to the present invention is: One or more elements RE: 1 at% or more and 10 at% or less; One or more elements M1: 20 at% or less; One or more elements M2: 5 at% or less, and Ni, Fe and / or Co, and inevitable impurities: the balance.
  • the composition of the Ni-based alloy according to the present invention is: One or more elements RE: 1 at% or more and 10 at% or less; One or more elements M2: 5 at% or less, Ni, Fe and / or Co, and inevitable impurities: balance.
  • the powder of the Ni-based alloy according to the present invention can be obtained by atomization.
  • Preferred atomization is gas atomization. If necessary, the powder is classified (for example, particles having a particle diameter of 500 ⁇ m or less are extracted).
  • the powder after classification is filled in a carbon steel can.
  • the can is evacuated and sealed to form a billet.
  • the billet is subjected to HIP molding (hot isostatic pressing).
  • the preferred pressure for the HIP molding is from 50 MPa to 300 MPa, and the preferred sintering temperature is from 800 ° C. to 1350 ° C.
  • a molded article is obtained by HIP molding.
  • the formed body is processed to obtain a target. By subjecting the target to sputtering, a seed layer having the same components as those of the target is obtained. This seed layer is incorporated in a magnetic recording medium.
  • the seed layer is formed by sputtering a target having the same components as the components.
  • This seed layer is obtained by rapid cooling and solidification. Since a great deal of labor is required for forming the seed layer, a test piece obtained by a single roll method is used.
  • the single-roll method has a quenching and solidifying step as in the case of sputtering. By employing the single-roll method, the film that would be obtained by sputtering is easily evaluated.
  • test piece was attached to a glass plate with a double-sided tape so that the measurement surface was in contact with the copper roll.
  • the diffraction pattern of this test piece was obtained with an X-ray diffractometer.
  • the diffraction conditions are as follows.
  • X-ray source Cu- ⁇ ray Scan speed: 4 ° / min
  • intensity ratio I (111) / I (200) is 1.0 or more
  • intensity ratio I (111) / I (200) is 0.7 or more and less than 1.0
  • intensity ratio I (111) / I (200) is less than 0.7
  • test piece that did not maintain the fcc structure and that was amorphized were also designated as C.
  • the Ni-based alloy according to the present invention can provide a seed layer excellent in various performances. From the evaluation results, the superiority of the present invention is clear.
  • Ni-based alloys described above are suitable for seed layers of various magnetic recording media.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Abstract

In order to provide a Ni-based alloy for a seed layer, the alloy enabling achievement of a seed layer that exhibits enhanced alignment to the (111) plane and that has a fine crystal grain size, a sputtering target which contains said alloy, and a magnetic recording medium having a seed layer which contains said alloy, provided is a Ni-based alloy for a seed layer in a magnetic recording medium, the alloy containing one or more types of elements RE selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, wherein the content rate of said elements RE falls within 1-10 at%.

Description

磁気記録媒体のシード層用Ｎｉ系合金Ni-based alloy for seed layer of magnetic recording media
　本発明は、磁気記録媒体のシード層用Ｎｉ系合金、該合金を含有するスパッタリングターゲット、及び、該合金を含有するシード層を有する磁気記録媒体に関する。 The present invention relates to a Ni-based alloy for a seed layer of a magnetic recording medium, a sputtering target containing the alloy, and a magnetic recording medium having a seed layer containing the alloy.
　磁気記録媒体にとって、大容量は重要である。大容量の達成には、高記録密度化が必要である。 大 Large capacity is important for magnetic recording media. To achieve a large capacity, a high recording density is required.
　面内磁気記録方式が採用された媒体が、普及している。近年は、この媒体に代えて、垂直磁気記録方式が採用された媒体（垂直磁気記録媒体）が普及しつつある。垂直磁気記録媒体では、磁化容易軸は、磁性膜中の媒体面に対して垂直方向に配向する。この垂直磁気記録媒体は、高記録密度に適している。 媒体 Media adopting the in-plane magnetic recording system has become widespread. In recent years, instead of this medium, a medium (perpendicular magnetic recording medium) employing a perpendicular magnetic recording system is becoming widespread. In a perpendicular magnetic recording medium, the axis of easy magnetization is oriented perpendicular to the medium surface in the magnetic film. This perpendicular magnetic recording medium is suitable for high recording density.
　垂直磁気記録媒体は、磁気記録層と軟磁性層とを有している。垂直磁気記録媒体はさらに、磁気記録層と軟磁性層との間に、シード層、下地膜層等を有している。 The perpendicular magnetic recording medium has a magnetic recording layer and a soft magnetic layer. The perpendicular magnetic recording medium further has a seed layer, a base film layer, and the like between the magnetic recording layer and the soft magnetic layer.
　特開２００９－１５５７２２公報には、ＮｉＷ系の合金からなるシード層が開示されている。このシード層は、磁気記録層の微細化に寄与しうる。 JP 2009-155722 A discloses a seed layer made of a NiW-based alloy. This seed layer can contribute to miniaturization of the magnetic recording layer.
　特開２０１２－１２８９３３公報には、その材質がＮｉ－Ｆｅ－Ｃｏ－Ｍ合金であるシード層用ターゲットが開示されている。この合金は、元素ＭとしてＷ、Ｍｏ、Ｔａ、Ｃｒ、Ｖ又はＮｂを含有する。このターゲットは、シード層の（１１１）面への配向に寄与する。 Japanese Patent Application Laid-Open No. 2012-128933 discloses a seed layer target whose material is a Ni-Fe-Co-M alloy. This alloy contains W, Mo, Ta, Cr, V or Nb as the element M. This target contributes to the orientation of the seed layer to the (111) plane.
　特開２０１７－１９１６２５公報には、その材質がＮｉ－Ｆｅ－Ｃｏ－Ｍ合金であるシード層用ターゲットが開示されている。この合金は、元素Ｍとして貴金属（Ａｕ、Ａｇ、Ｐｄ、Ｒｈ、Ｉｒ、Ｒｕ、Ｒｅ又はＰｔ）を含有する。このターゲットは、シード層の（１１１）面への配向に寄与する。 JP-A-2017-191625 discloses a seed layer target whose material is a Ni-Fe-Co-M alloy. This alloy contains a noble metal (Au, Ag, Pd, Rh, Ir, Ru, Re or Pt) as the element M. This target contributes to the orientation of the seed layer to the (111) plane.
　特開２０１３－０７３６３５公報には、スパッタリングターゲットの材質として、希土類が添加された合金が開示されている。このターゲットから、垂直磁気記録媒体の軟磁性層が形成される。 JP-A-2013-073635 discloses an alloy to which a rare earth is added as a material of a sputtering target. The soft magnetic layer of the perpendicular magnetic recording medium is formed from this target.
特開２００９－１５５７２２公報JP 2009-155722 A 特開２０１２－１２８９３３公報JP 2012-128933 A 特開２０１７－１９１６２５公報JP 2017-191625 A 特開２０１３－０７３６３５公報JP 2013-073635 A
　磁気記録媒体には、さらなる高記録密度化の要請がある。シード層の、（１１１）面への配向性と結晶粒の微細化とには、改善の余地がある。 There is a demand for higher recording density for magnetic recording media. There is room for improvement in the orientation of the seed layer to the (111) plane and the refinement of crystal grains.
　本発明の目的は、（１１１）面への配向性が高く、かつ結晶粒度が微細であるシード層が得られうるシード層用Ｎｉ系合金、該合金を含有するスパッタリングターゲット、及び、該合金を含有するシード層を有する磁気記録媒体の提供にある。 An object of the present invention is to provide a Ni-based alloy for a seed layer capable of obtaining a seed layer having high orientation to a (111) plane and a fine crystal grain size, a sputtering target containing the alloy, and Another object of the present invention is to provide a magnetic recording medium having a seed layer.
　本発明に係る磁気記録媒体のシード層用Ｎｉ系合金（以下「本発明に係るＮｉ系合金」という場合がある。）は、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕからなる群から選択される１種又は２種以上の元素ＲＥを含有する。本発明に係るＮｉ系合金における元素ＲＥの含有率は、１ａｔ％以上１０ａｔ％以下である。 The Ni-based alloy for the seed layer of the magnetic recording medium according to the present invention (hereinafter sometimes referred to as “Ni-based alloy according to the present invention”) includes La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, and Tb. , Dy, Ho, Er, Tm, Yb, and Lu. The content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less.
　本発明に係るＮｉ系合金において、Ｎｉの含有率（ａｔ％）、Ｆｅの含有率（ａｔ％）及びＣｏの含有率（ａｔ％）の比を、Ｎｉの含有率：Ｆｅの含有率：Ｃｏの含有率＝α：β：γで表すとき（但し、α＋β＋γ＝１００である）、αは１５以上１００以下であり、βは０以上６０以下であり、γは０以上７０以下であることが好ましい。 In the Ni-based alloy according to the present invention, the ratio of the Ni content (at%), the Fe content (at%), and the Co content (at%) is defined as Ni content: Fe content: Co. Is expressed as α: β: γ (where α + β + γ = 100), α is 15 or more and 100 or less, β is 0 or more and 60 or less, and γ is 0 or more and 70 or less. preferable.
　本発明に係るＮｉ系合金は、好ましくは、Ｆｅ及び／又はＣｏをさらに含有する。 Ｎｉ The Ni-based alloy according to the present invention preferably further contains Fe and / or Co.
　本発明に係るＮｉ系合金は、好ましくは、Ｒｕ、Ｒｅ、Ｗ、Ｍｏ及びＴａからなる群から選択される１種又は２種以上の元素Ｍ１をさらに含有する。本発明に係るＮｉ系合金における元素Ｍ１の含有率は、好ましくは、２５ａｔ％以下である。 Ｎｉ The Ni-based alloy according to the present invention preferably further contains one or more elements M1 selected from the group consisting of Ru, Re, W, Mo and Ta. The content of the element M1 in the Ni-based alloy according to the present invention is preferably 25 at% or less.
　本発明に係るＮｉ系合金は、好ましくは、Ａｌ、Ｓｉ、Ｂ及びＣからなる群から選択される１種又は２種以上の元素Ｍ２をさらに含有する。本発明に係るＮｉ系合金におけるＭ２の含有率は、好ましくは、１０ａｔ％以下である。 Ｎｉ The Ni-based alloy according to the present invention preferably further contains one or more elements M2 selected from the group consisting of Al, Si, B and C. The content of M2 in the Ni-based alloy according to the present invention is preferably 10 at% or less.
　他の観点によれば、本発明に係るスパッタリングターゲットは、本発明に係るＮｉ系合金から成る。すなわち、本発明に係るスパッタリングターゲットの材質は、本発明に係るＮｉ系合金である。本発明に係るＮｉ系合金は、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕからなる群から選択される１種又は２種以上の元素ＲＥを含有する。本発明に係るＮｉ系合金における元素ＲＥの含有率は、１ａｔ％以上１０ａｔ％以下である。 According to another aspect, a sputtering target according to the present invention includes the Ni-based alloy according to the present invention. That is, the material of the sputtering target according to the present invention is the Ni-based alloy according to the present invention. The Ni-based alloy according to the present invention is one or two selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Contains the above element RE. The content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less.
　さらに他の観点によれば、本発明に係る磁気記録媒体は、本発明に係るＮｉ系合金を含有するシード層を有する。このシード層は、好ましくは、本発明に係るスパッタリングターゲットが用いられたスパッタリングで得られる。本発明に係るターゲットの材質は、好ましくは、本発明に係るＮｉ系合金である。本発明に係るＮｉ系合金は、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕからなる群から選択される１種又は２種以上の元素ＲＥを含有する。本発明に係るＮｉ系合金における元素ＲＥの含有率は、１ａｔ％以上１０ａｔ％以下である。 According to yet another aspect, a magnetic recording medium according to the present invention has a seed layer containing the Ni-based alloy according to the present invention. This seed layer is preferably obtained by sputtering using the sputtering target according to the present invention. The material of the target according to the present invention is preferably the Ni-based alloy according to the present invention. The Ni-based alloy according to the present invention is one or two selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Contains the above element RE. The content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less.
　本発明に係るＮｉ系合金により、（１１１）面への配向性が高く、かつ結晶粒度が微細であるシード層が得られうる。本発明に係るＮｉ系合金は、磁気記憶媒体の高記録密度に寄与しうる。 シ ー ド The Ni-based alloy according to the present invention can provide a seed layer having high orientation to the (111) plane and a fine crystal grain size. The Ni-based alloy according to the present invention can contribute to a high recording density of a magnetic storage medium.
　本発明に係る磁気記録媒体のシード層用Ｎｉ系合金は、
（１）Ｎｉ、並びに、
（２）Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕからなる群から選択される１種又は２種以上の元素ＲＥを含む。本発明に係るＮｉ系合金における元素ＲＥの含有率は、１ａｔ％以上１０ａｔ％以下である。なお、本発明に係るＮｉ系合金が２種以上の元素ＲＥを含有する場合、「元素ＲＥの含有率」は、当該２種以上の元素ＲＥの合計含有率を意味する。 The Ni-based alloy for the seed layer of the magnetic recording medium according to the present invention,
(1) Ni and
(2) Contains one or more elements RE selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. . The content of the element RE in the Ni-based alloy according to the present invention is 1 at% or more and 10 at% or less. When the Ni-based alloy according to the present invention contains two or more kinds of elements RE, the “content of the element RE” means a total content of the two or more kinds of elements RE.
　好ましい一態様において、本発明に係るＮｉ系合金の組成は、
　　１種又は２種以上の元素ＲＥ：１ａｔ％以上１０ａｔ％以下、並びに、
　　Ｎｉ及び不可避的不純物：残部
である。 In a preferred embodiment, the composition of the Ni-based alloy according to the present invention is:
One or more elements RE: 1 at% or more and 10 at% or less, and
Ni and unavoidable impurities: the balance.
　Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕ（すなわち元素ＲＥ）は、いずれも希土類元素である。Ｎｉは、ｆｃｃ構造を有する。元素ＲＥは、そのメカニズムは明確でないが、ｆｃｃ構造の優先配向を（２００）から（１１１）へ変化させうる。Ｎｉに元素ＲＥが添加された合金から、（１１１）面への配向性に優れたシード層が得られうる。このシード層により、垂直磁気記録媒体における高記録密度が達成されうる。 La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu (that is, element RE) are all rare earth elements. Ni has an fcc structure. Element RE can change the preferred orientation of the fcc structure from (200) to (111), although the mechanism is not clear. A seed layer excellent in orientation to the (111) plane can be obtained from an alloy in which the element RE is added to Ni. With this seed layer, a high recording density in a perpendicular magnetic recording medium can be achieved.
　元素ＲＥのＮｉへの固溶範囲は、非常に狭い。従って、Ｎｉに元素ＲＥが添加された合金から得られたシード層では、金属間化合物が析出する。この析出により、結晶粒度の微細化が達成される。このシード層により、垂直磁気記録媒体における高記録密度が達成されうる。 固 The range of solid solution of element RE in Ni is very narrow. Therefore, in a seed layer obtained from an alloy in which the element RE is added to Ni, an intermetallic compound is precipitated. This precipitation achieves a finer grain size. With this seed layer, a high recording density in a perpendicular magnetic recording medium can be achieved.
　高記録密度の観点から、本発明に係るＮｉ系合金における元素ＲＥの含有率は、１ａｔ％以上が好ましく、２ａｔ％以上がさらに好ましい。過剰の元素ＲＥは、シード層をｆｃｃ構造以外の構造にシフトさせる。シード層がｆｃｃ構造を維持しうるとの観点から、元素ＲＥの含有率は１０ａｔ％以下が好ましく、５ａｔ％以下がさらに一層好ましい。 From the viewpoint of high recording density, the content of the element RE in the Ni-based alloy according to the present invention is preferably at least 1 at%, more preferably at least 2 at%. Excess element RE shifts the seed layer to a structure other than the fcc structure. From the viewpoint that the seed layer can maintain the fcc structure, the content of the element RE is preferably equal to or less than 10 at%, and more preferably equal to or less than 5 at%.
　本発明に係るＮｉ系合金は、Ｆｅ及び／又はＣｏをさらに含有してもよい。本発明に係るＮｉ系合金は、Ｆｅ及びＣｏのいずれも含有しない態様、Ｆｅを含有し、Ｃｏを含有しない態様、Ｃｏを含有し、Ｆｅを含有しない態様、並び、Ｆｅ及びＣｏをともに含有する態様を包含する。 ＮｉThe Ni-based alloy according to the present invention may further contain Fe and / or Co. The Ni-based alloy according to the present invention contains neither Fe nor Co, contains Fe, contains no Co, contains Co, contains no Fe, and contains both Fe and Co. Embodiments.
　本発明に係るＮｉ系合金において、Ｎｉの含有率（ａｔ％）、Ｆｅの含有率（ａｔ％）及びＣｏの含有率（ａｔ％）の比は、Ｎｉの含有率：Ｆｅの含有率：Ｃｏの含有率＝α：β：γで表される。なお、α＋β＋γ＝１００である。αは、Ｎｉ、Ｆｅ及びＣｏの合計含有率（ａｔ％）に対するＮｉの含有率（ａｔ％）の百分率であり、βは、Ｎｉ、Ｆｅ及びＣｏの合計含有率（ａｔ％）に対するＦｅの含有率（ａｔ％）の百分率であり、γは、Ｎｉ、Ｆｅ及びＣｏの合計含有率（ａｔ％）に対するＣｏの含有率（ａｔ％）の百分率である。 In the Ni-based alloy according to the present invention, the ratio of the Ni content (at%), the Fe content (at%), and the Co content (at%) is as follows: Ni content: Fe content: Co Content = α: β: γ. Note that α + β + γ = 100. α is the percentage of the Ni content (at%) with respect to the total content of Ni, Fe and Co (at%), and β is the Fe content with respect to the total content of Ni, Fe and Co (at%). And γ is the percentage of the Co content (at%) relative to the total content of Ni, Fe and Co (at%).
　αは、１５以上１００以下が好ましい。αが１５以上であるＮｉ系合金により、保磁力が抑制されたシード層が得られうる。同様の観点から、αは、２０以上がさらに好ましく、２５以上がさらに一層好ましく、３０以上がさらに一層好ましく、４０以上がさらに一層好ましく、５０以上がさらに一層好ましく、６０以上がさらに一層好ましい。 Α is preferably 15 or more and 100 or less. A seed layer in which the coercive force is suppressed can be obtained by using a Ni-based alloy in which α is 15 or more. From the same viewpoint, α is more preferably 20 or more, still more preferably 25 or more, still more preferably 30 or more, even more preferably 40 or more, still more preferably 50 or more, and even more preferably 60 or more.
　βは、０以上６０以下が好ましい。βがこの範囲内であるＮｉ系合金により、保磁力が抑制されたシード層が得られうる。同様の観点から、βは、２以上がさらに好ましく、５以上がさらに一層好ましく、１０以上がさらに一層好ましい。同様の観点から、βは、５０以下がさらに好ましく、４０以下がさらに一層好ましい。 Δβ is preferably 0 or more and 60 or less. A seed layer in which the coercive force is suppressed can be obtained by the Ni-based alloy having β in this range. From the same viewpoint, β is more preferably 2 or more, still more preferably 5 or more, and still more preferably 10 or more. From the same viewpoint, β is more preferably 50 or less, and still more preferably 40 or less.
　γは、０以上７０以下が好ましい。γがこの範囲内であるＮｉ系合金により、（１１１）方向の保磁力が抑制されたシード層が得られうる。同様の観点から、γは、２以上がさらに好ましく、５以上がさらに一層好ましく、１０以上がさらに一層好ましい。同様の観点から、γは、６０以下がさらに好ましく、４０以下がさらに好ましく、３０以下がさらに一層好ましい。 Γ is preferably from 0 to 70. With a Ni-based alloy having γ within this range, a seed layer in which the coercive force in the (111) direction is suppressed can be obtained. From the same viewpoint, γ is more preferably 2 or more, still more preferably 5 or more, and still more preferably 10 or more. From the same viewpoint, γ is more preferably 60 or less, still more preferably 40 or less, and even more preferably 30 or less.
　本発明に係るＮｉ系合金がＦｅを含有し、Ｃｏを含有しない場合、αは４０以上１００未満、βは０超６０以下であることが好ましい。なお、この場合、γは０である。 場合 When the Ni-based alloy according to the present invention contains Fe and does not contain Co, α is preferably 40 or more and less than 100, and β is more than 0 and 60 or less. In this case, γ is 0.
　本発明に係るＮｉ系合金がＣｏを含有し、Ｆｅを含有しない場合、αは３０以上１００未満、γは０超７０以下であることが好ましい。なお、この場合、βは０である。 場合 When the Ni-based alloy according to the present invention contains Co and does not contain Fe, α is preferably 30 or more and less than 100, and γ is more than 0 and 70 or less. In this case, β is 0.
　本発明に係るＮｉ系合金がＦｅ及びＣｏを含有する場合、αは１５以上１００未満であり、βは０超６０以下、γは０超７０以下であることが好ましい。 場合 When the Ni-based alloy according to the present invention contains Fe and Co, α is preferably 15 or more and less than 100, β is more than 0 and 60 or less, and γ is preferably more than 0 and 70 or less.
　好ましい一態様において、本発明に係るＮｉ系合金の組成は、
　１種又は２種以上の元素ＲＥ：１ａｔ％以上１０ａｔ％以下、並びに
　Ｎｉと、Ｆｅ及び／又はＣｏと、不可避的不純物：残部
である。 In a preferred embodiment, the composition of the Ni-based alloy according to the present invention is:
One or more elements RE: 1 at% to 10 at%, Ni, Fe and / or Co, and inevitable impurities: balance.
　本発明に係るＮｉ系合金は、Ｒｕ、Ｒｅ、Ｗ、Ｍｏ及びＴａからなる群から選択される１種又は２種以上の元素Ｍ１をさらに含有してもよい。元素Ｍ１を含有するＮｉ系合金から、（１１１）面への配向性に優れたシード層が得られうる。さらに、元素Ｍ１を含有するＮｉ系合金から、結晶粒度が微細であるシード層が得られうる。このシード層により、垂直磁気記録媒体における高記録密度が達成されうる。 ＮｉThe Ni-based alloy according to the present invention may further contain one or more elements M1 selected from the group consisting of Ru, Re, W, Mo and Ta. From a Ni-based alloy containing the element M1, a seed layer having excellent orientation to the (111) plane can be obtained. Further, a seed layer having a fine crystal grain size can be obtained from a Ni-based alloy containing the element M1. With this seed layer, a high recording density in a perpendicular magnetic recording medium can be achieved.
　高記録密度の観点から、元素Ｍ１の含有率は１ａｔ％以上が好ましく、２ａｔ％以上が特に好ましい。過剰の元素Ｍ１は、シード層をｆｃｃ構造以外の構造にシフトさせる。さらに、過剰の元素Ｍ１は、シード層のアモルファス化を招くおそれがある。シード層がｆｃｃ構造を維持しうるとの観点、及びアモルファス化が生じにくいとの観点から、元素Ｍ１の含有率は２０ａｔ％以下が好ましく、１０ａｔ％以下が特に好ましい。なお、本発明に係るＮｉ系合金が２種以上の元素Ｍ１を含有する場合、「元素Ｍ１の含有率」は、当該２種以上の元素Ｍ１の合計含有率を意味する。 か ら From the viewpoint of high recording density, the content of the element M1 is preferably at least 1 at%, particularly preferably at least 2 at%. The excess element M1 shifts the seed layer to a structure other than the fcc structure. Furthermore, the excess element M1 may cause the seed layer to become amorphous. In light of the viewpoint that the seed layer can maintain the fcc structure and the viewpoint that amorphous formation does not easily occur, the content of the element M1 is preferably equal to or less than 20 at%, and particularly preferably equal to or less than 10 at%. In the case where the Ni-based alloy according to the present invention contains two or more elements M1, "content of element M1" means the total content of the two or more elements M1.
　好ましい一態様において、本発明に係るＮｉ系合金の組成は、
　　１種又は２種以上の元素ＲＥ：１ａｔ％以上１０ａｔ％以下、
　　１種又は２種以上の元素Ｍ１：２０ａｔ％以下、並びに
　　Ｎｉと、Ｆｅ及び／又はＣｏと、不可避的不純物：残部
である。 In a preferred embodiment, the composition of the Ni-based alloy according to the present invention is:
One or more elements RE: 1 at% or more and 10 at% or less;
One or more elements M1: 20 at% or less, Ni, Fe and / or Co, and inevitable impurities: balance.
　本発明に係るＮｉ系合金は、Ａｌ、Ｓｉ、Ｂ及びＣからなる群から選択される１種又は２種以上の元素Ｍ２をさらに含有してもよい。元素Ｍ２を含有するＮｉ系合金から、（１１１）面への配向性に優れたシード層が得られうる。さらに、元素Ｍ２を含有するＮｉ系合金から、結晶粒度が微細であるシード層が得られうる。このシード層により、垂直磁気記録媒体における高記録密度が達成されうる。 ＮｉThe Ni-based alloy according to the present invention may further contain one or more elements M2 selected from the group consisting of Al, Si, B and C. A seed layer having excellent orientation to the (111) plane can be obtained from a Ni-based alloy containing the element M2. Furthermore, a seed layer having a fine crystal grain size can be obtained from a Ni-based alloy containing the element M2. With this seed layer, a high recording density in a perpendicular magnetic recording medium can be achieved.
　高記録密度の観点から、元素Ｍ２の含有率は１ａｔ％以上が好ましく、２ａｔ％以上が特に好ましい。過剰の元素Ｍ２は、シード層のアモルファス化を招くおそれがある。シード層のアモルファス化が生じにくいとの観点から、元素Ｍ２の含有率は５ａｔ％以下が好ましい。なお、本発明に係るＮｉ系合金が２種以上の元素Ｍ２を含有する場合、「元素Ｍ２の含有率」は、当該２種以上の元素Ｍ２の合計含有率を意味する。 か ら From the viewpoint of high recording density, the content of element M2 is preferably at least 1 at%, particularly preferably at least 2 at%. Excessive element M2 may cause the seed layer to become amorphous. The content of the element M2 is preferably 5 at% or less from the viewpoint that the seed layer is unlikely to be made amorphous. When the Ni-based alloy according to the present invention contains two or more elements M2, "content of element M2" means the total content of the two or more elements M2.
　垂直磁気記録媒体における高記録密度が達成されうるとの観点から、元素Ｍ１の含有率と元素Ｍ２の含有率との合計は、１ａｔ％以上が好ましく、２ａｔ％以上が特に好ましい。シード層のアモルファス化が生じにくいとの観点から、元素Ｍ１の含有率と元素Ｍ２の含有率との合計は２０ａｔ％以下が好ましく、１５ａｔ％以下が特に好ましい。 か ら From the viewpoint that a high recording density in a perpendicular magnetic recording medium can be achieved, the total of the content of the element M1 and the content of the element M2 is preferably at least 1 at%, particularly preferably at least 2 at%. From the viewpoint that the seed layer is unlikely to become amorphous, the total of the content of the element M1 and the content of the element M2 is preferably 20 at% or less, and particularly preferably 15 at% or less.
　好ましい一の態様において、本発明に係るＮｉ系合金の組成は、
　　１種又は２種以上の元素ＲＥ：１ａｔ％以上１０ａｔ％以下、
　　１種又は２種以上の元素Ｍ１：２０ａｔ％以下、
　　１種又は２種以上の元素Ｍ２：５ａｔ％以下、並びに、
　　Ｎｉと、Ｆｅ及び／又はＣｏと、及び不可避的不純物：残部
である。 In a preferred embodiment, the composition of the Ni-based alloy according to the present invention is:
One or more elements RE: 1 at% or more and 10 at% or less;
One or more elements M1: 20 at% or less;
One or more elements M2: 5 at% or less, and
Ni, Fe and / or Co, and inevitable impurities: the balance.
　好ましい他の態様において、本発明に係るＮｉ系合金の組成は、
　　１種又は２種以上の元素ＲＥ：１ａｔ％以上１０ａｔ％以下、
　　１種又は２種以上の元素Ｍ２：５ａｔ％以下、並びに
　　Ｎｉと、Ｆｅ及び／又はＣｏと、不可避的不純物：残部
である。 In another preferred embodiment, the composition of the Ni-based alloy according to the present invention is:
One or more elements RE: 1 at% or more and 10 at% or less;
One or more elements M2: 5 at% or less, Ni, Fe and / or Co, and inevitable impurities: balance.
　本発明に係るＮｉ系合金からなる粉末は、アトマイズによって得られうる。好ましいアトマイズは、ガスアトマイズである。この粉末に、必要に応じ、分級（例えば粒子径が５００μｍ以下の粒子を抽出）がなされる。分級後の粉末が、炭素鋼製の缶に充填される。この缶が真空脱気され、封止されてビレットが得られる。このビレットに、ＨＩＰ成形（熱間等方圧プレス）が施される。ＨＩＰ成形の、好ましい圧力は５０ＭＰａ以上３００ＭＰａ以下であり、好ましい焼結温度は８００℃以上１３５０℃以下である。ＨＩＰ成形により、成形体が得られる。この成形体に加工が施され、ターゲットが得られる。このターゲットにスパッタリングが施されることで、このターゲットの成分と同じ成分を有するシード層が得られる。磁気記録媒体には、このシード層が組み込まれる。 粉末 The powder of the Ni-based alloy according to the present invention can be obtained by atomization. Preferred atomization is gas atomization. If necessary, the powder is classified (for example, particles having a particle diameter of 500 μm or less are extracted). The powder after classification is filled in a carbon steel can. The can is evacuated and sealed to form a billet. The billet is subjected to HIP molding (hot isostatic pressing). The preferred pressure for the HIP molding is from 50 MPa to 300 MPa, and the preferred sintering temperature is from 800 ° C. to 1350 ° C. A molded article is obtained by HIP molding. The formed body is processed to obtain a target. By subjecting the target to sputtering, a seed layer having the same components as those of the target is obtained. This seed layer is incorporated in a magnetic recording medium.
　以下、実施例によって本発明の効果が明らかにされるが、この実施例の記載に基づいて本発明が限定的に解釈されるべきではない。 Hereinafter, although the effects of the present invention will be clarified by examples, the present invention should not be construed as being limited based on the description of the examples.
　前述の通りシード層は、その成分と同じ成分を有するターゲットにスパッタリングが施されることで、成膜される。このシード層は、急冷・凝固により得られる。シード層の形成には多大の労力を要するので、単ロール法により得られた試験片を用いる。単ロール法は、スパッタリングと同様、急冷・凝固の工程を有する。単ロール法を採用することにより、スパッタリングで得られるであろう膜の評価を、簡易的に行う。 の 通 り As described above, the seed layer is formed by sputtering a target having the same components as the components. This seed layer is obtained by rapid cooling and solidification. Since a great deal of labor is required for forming the seed layer, a test piece obtained by a single roll method is used. The single-roll method has a quenching and solidifying step as in the case of sputtering. By employing the single-roll method, the film that would be obtained by sputtering is easily evaluated.
　下記の表１－５に示された組成となるように秤量した３０ｇの原料を、直径が１０ｍｍであり長さが４０ｍｍである水冷銅鋳型に投入した。この鋳型を減圧し、アルゴンガス雰囲気中でアーク溶解し、溶解母材を得た。この母材を直径が１５ｍｍである石英缶中に投入し、ノズルから出湯させ、単ロール法に供して試験片を得た。この単ロール法の条件は、以下の通りである。
　　出湯ノズルの直径：１ｍｍ
　　雰囲気の気圧：６１ｋＰａ
　　噴霧差圧：６９ｋＰａ
　　ロールの材質：銅
　　ロールの直径：３００ｍｍ
　　ロールの回転速度：３０００ｒｐｍ
　　ロールと出湯ノズルとのギャップ：０．３ｍｍ 30 g of the raw material weighed so as to have the composition shown in Table 1-5 below was charged into a water-cooled copper mold having a diameter of 10 mm and a length of 40 mm. This mold was depressurized and arc-melted in an argon gas atmosphere to obtain a molten base material. This base material was put into a quartz can having a diameter of 15 mm, and the hot water was discharged from a nozzle, and subjected to a single roll method to obtain a test piece. The conditions of the single roll method are as follows.
Hot water nozzle diameter: 1mm
Atmospheric pressure: 61 kPa
Spray differential pressure: 69 kPa
Roll material: copper Roll diameter: 300 mm
Roll rotation speed: 3000 rpm
Gap between roll and tapping nozzle: 0.3mm
　なお、各表に記載されたＲＥ元素、Ｍ１元素及びＭ２元素以外の合金の残部は、Ｎｉ－Ｆｅ－Ｃｏ及び不可避的不純物である。なお、表１～４は、実施例、表５は比較例である。 The remainder of the alloy other than the RE element, M1 element and M2 element described in each table is Ni-Fe-Co and inevitable impurities. Tables 1 to 4 are examples and Table 5 is a comparative example.
［結晶粒径］
　試験片の、ロール方向断面のミクロ組織像を得た。「ＪＩＳ　Ｇ　０５５１」の「鋼・結晶粒度の顕微鏡試験方法」の規定に準拠し、結晶粒径を測定した。下記の基準に基づき、格付けを行った。
　　Ａ：Ｐ／Ｌｔが１．５以上
　　Ｂ：Ｐ／Ｌｔが１．２以上１．５未満
　　Ｃ：Ｐ／Ｌｔが１．２未満 [Grain size]
The microstructure image of the cross section in the roll direction of the test piece was obtained. The crystal grain size was measured according to the provisions of “Microscopic test method for steel and crystal grain size” of “JIS G 0551”. Ratings were based on the following criteria.
A: P / Lt is 1.5 or more B: P / Lt is 1.2 or more and less than 1.5 C: P / Lt is less than 1.2
　結晶粒径に関する結果が、下記の表１－５に示されている。 結果 The results regarding the crystal grain size are shown in Tables 1-5 below.
［保磁力］
　試料台に、両面テープで試験片を張り付けた。初期印加磁場１４４ｋＡ／ｍの条件で、振動試料型の保磁力メータにて、保磁力を測定した。下記の基準に基づき、格付けを行った。
　　Ａ：保磁力が３００Ａ／ｍ以下
　　Ｂ：保磁力が３００Ａ／ｍを超え５００Ａ／ｍ以下
　　Ｃ：保磁力が５００Ａ／ｍを超える [Coercivity]
The test piece was stuck to the sample stand with double-sided tape. The coercive force was measured with a vibrating sample type coercive force meter under the condition of an initial applied magnetic field of 144 kA / m. Ratings were based on the following criteria.
A: coercive force is 300 A / m or less B: coercive force exceeds 300 A / m and 500 A / m or less C: coercive force exceeds 500 A / m
　保磁力に関する結果が、下記の表１－５に示されている。 結果 The results on coercive force are shown in Tables 1-5 below.
［配向性］
　測定面が銅ロールとの接触面となるように、ガラス板に試験片を両面テープで貼り付けた。Ｘ線回折装置にて、この試験片の回折パターンを得た。回折の条件は、下記の通りである。
　　Ｘ線源：Ｃｕ－α線
　　スキャンスピード：４°／ｍｉｎ [Orientation]
A test piece was attached to a glass plate with a double-sided tape so that the measurement surface was in contact with the copper roll. The diffraction pattern of this test piece was obtained with an X-ray diffractometer. The diffraction conditions are as follows.
X-ray source: Cu-α ray Scan speed: 4 ° / min
　得られた回折パターンにて、（１１１）面で回折したＸ線の強度Ｉ（１１１）と、（２００）面で回折したＸ線の強度Ｉ（２００）との強度比Ｉ（１１１）／Ｉ（２００）を求めた。 In the obtained diffraction pattern, an intensity ratio I (111) / I of the intensity I (111) of the X-ray diffracted on the (111) plane and the intensity I (200) of the X-ray diffracted on the (200) plane. (200) was determined.
　下記の基準に基づき、格付けを行った。
　　Ａ：強度比Ｉ（１１１）／Ｉ（２００）が１．０以上
　　Ｂ：強度比Ｉ（１１１）／Ｉ（２００）が０．７以上、１．０未満
　　Ｃ：強度比Ｉ（１１１）／Ｉ（２００）が０．７未満 Ratings were based on the following criteria.
A: intensity ratio I (111) / I (200) is 1.0 or more B: intensity ratio I (111) / I (200) is 0.7 or more and less than 1.0 C: intensity ratio I (111) / I (200) is less than 0.7
　なお、試験片がｆｃｃ構造を保っていないもの、及びアモルファス化したものも、Ｃとした。 Ｃ Note that the test piece that did not maintain the fcc structure and that was amorphized were also designated as C.
　配向性に関する結果が、下記の表１－５に示されている。 結果 The results regarding the orientation are shown in Tables 1-5 below.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000005
Figure JPOXMLDOC01-appb-T000005
　表１－５に示されるように、本発明に係るＮｉ系合金により、諸性能に優れたシード層が得られうる。この評価結果から、本発明の優位性は明らかである。 シ ー ド As shown in Table 1-5, the Ni-based alloy according to the present invention can provide a seed layer excellent in various performances. From the evaluation results, the superiority of the present invention is clear.
　以上説明されたＮｉ系合金は、種々の磁気記録媒体のシード層に適している。 The Ni-based alloys described above are suitable for seed layers of various magnetic recording media.

Claims (8)

  1. 　Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕからなる群から選択される１種又は２種以上の元素ＲＥを含有し、
    　前記元素ＲＥの含有率が１ａｔ％以上１０ａｔ％以下である、磁気記録媒体のシード層用Ｎｉ系合金。     Containing one or more elements RE selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu;
    A Ni-based alloy for a seed layer of a magnetic recording medium, wherein the content of the element RE is 1 at% or more and 10 at% or less.
  2. 　Ｆｅ及び／又はＣｏをさらに含有する、請求項１記載のＮｉ系合金。 The Ni-based alloy according to claim 1, further comprising Fe and / or Co.
  3. 　前記Ｎｉ系合金におけるＮｉの含有率（ａｔ％）、Ｆｅの含有率（ａｔ％）及びＣｏの含有率（ａｔ％）の比を、Ｎｉの含有率：Ｆｅの含有率：Ｃｏの含有率＝α：β：γで表すとき（但し、α＋β＋γ＝１００である）、αが１５以上１００以下であり、βが０以上６０以下であり、γが０以上７０以下である、請求項１又は２に記載のＮｉ系合金。 The ratio of the Ni content (at%), the Fe content (at%), and the Co content (at%) in the Ni-based alloy is expressed as Ni content: Fe content: Co content = When represented by α: β: γ (where α + β + γ = 100), α is 15 or more and 100 or less, β is 0 or more and 60 or less, and γ is 0 or more and 70 or less. 2. The Ni-based alloy according to 1.
  4. 　Ｒｕ、Ｒｅ、Ｗ、Ｍｏ及びＴａからなる群から選択される１種又は２種以上の元素Ｍ１をさらに含有し、
    　前記元素Ｍ１の含有率が２５ａｔ％以下である、請求項１～３のいずれか一項に記載のＮｉ系合金。     One or more elements M1 selected from the group consisting of Ru, Re, W, Mo and Ta,
    4. The Ni-based alloy according to claim 1, wherein the content of the element M1 is 25 at% or less.
  5. 　Ａｌ、Ｓｉ、Ｂ及びＣからなる群から選択される１種又は２種以上の元素Ｍ２をさらに含有し、
    　前記元素Ｍ２の含有率が１０ａｔ％以下である、請求項１～４のいずれか一項に記載のＮｉ系合金。     Further containing one or more elements M2 selected from the group consisting of Al, Si, B and C;
    5. The Ni-based alloy according to claim 1, wherein the content of the element M2 is 10 at% or less.
  6. 　請求項１～５のいずれか一項に記載のＮｉ系合金から成る、スパッタリングターゲット材。 (4) A sputtering target material comprising the Ni-based alloy according to any one of (1) to (5).
  7. 　シード層を有する磁気記録媒体であって、
    　前記シード層が、請求項１～５のいずれか一項に記載のＮｉ系合金を含有する、前記磁気記録媒体。     A magnetic recording medium having a seed layer,
    The magnetic recording medium, wherein the seed layer contains the Ni-based alloy according to any one of claims 1 to 5.
  8. 　前記シード層が、請求項６に記載のスパッタリングターゲットが用いられたスパッタリングで得られる、請求項７に記載の磁気記録媒体。 The magnetic recording medium according to claim 7, wherein the seed layer is obtained by sputtering using the sputtering target according to claim 6.
PCT/JP2019/026240 2018-07-04 2019-07-02 Ni-based alloy for seed layer in magnetic recording medium WO2020009095A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-127487 2018-07-04
JP2018127487A JP7157573B2 (en) 2018-07-04 2018-07-04 Ni-based alloy for seed layer of magnetic recording media

Publications (1)

Publication Number Publication Date
WO2020009095A1 true WO2020009095A1 (en) 2020-01-09

Family

ID=69060401

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/026240 WO2020009095A1 (en) 2018-07-04 2019-07-02 Ni-based alloy for seed layer in magnetic recording medium

Country Status (3)

Country Link
JP (1) JP7157573B2 (en)
TW (1) TW202006149A (en)
WO (1) WO2020009095A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024081123A1 (en) * 2022-10-12 2024-04-18 Deringer-Ney Inc. Nickel-ruthenium-based ternary or greater alloys, products comprising the same, and methods of making and using the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11339244A (en) * 1998-03-25 1999-12-10 Asahi Komagu Kk Magnetic recording medium and production thereof
JP2001243620A (en) * 2000-03-01 2001-09-07 Asahi Komagu Kk Magnetic recording medium
JP2004095074A (en) * 2002-08-30 2004-03-25 Toshiba Corp Vertical magnetic recording medium and magnetic recording and reproducing device
JP2005251375A (en) * 2004-02-05 2005-09-15 Fuji Electric Holdings Co Ltd Vertical magnetic recording medium and its manufacturing method
JP2008146801A (en) * 2006-12-05 2008-06-26 Heraeus Inc Magnetic recording medium, sputtering target and manufacturing method of magnetic recording medium
JP2012128933A (en) * 2010-11-22 2012-07-05 Sanyo Special Steel Co Ltd Alloy for seed layer of magnetic recording medium, and sputtering target material
JP2014049171A (en) * 2012-09-04 2014-03-17 Showa Denko Kk Magnetic recording medium, and magnetic recording and reproducing device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11339244A (en) * 1998-03-25 1999-12-10 Asahi Komagu Kk Magnetic recording medium and production thereof
JP2001243620A (en) * 2000-03-01 2001-09-07 Asahi Komagu Kk Magnetic recording medium
JP2004095074A (en) * 2002-08-30 2004-03-25 Toshiba Corp Vertical magnetic recording medium and magnetic recording and reproducing device
JP2005251375A (en) * 2004-02-05 2005-09-15 Fuji Electric Holdings Co Ltd Vertical magnetic recording medium and its manufacturing method
JP2008146801A (en) * 2006-12-05 2008-06-26 Heraeus Inc Magnetic recording medium, sputtering target and manufacturing method of magnetic recording medium
JP2012128933A (en) * 2010-11-22 2012-07-05 Sanyo Special Steel Co Ltd Alloy for seed layer of magnetic recording medium, and sputtering target material
JP2014049171A (en) * 2012-09-04 2014-03-17 Showa Denko Kk Magnetic recording medium, and magnetic recording and reproducing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024081123A1 (en) * 2022-10-12 2024-04-18 Deringer-Ney Inc. Nickel-ruthenium-based ternary or greater alloys, products comprising the same, and methods of making and using the same

Also Published As

Publication number Publication date
JP7157573B2 (en) 2022-10-20
JP2020009510A (en) 2020-01-16
TW202006149A (en) 2020-02-01

Similar Documents

Publication Publication Date Title
US10325762B2 (en) Sputtering target for forming magnetic recording film and process for producing same
TWI512113B (en) An alloy for a seed layer of a magnetic recording medium, and a sputtering target
JP5705993B2 (en) Fe-Pt-Ag-C based sputtering target in which C particles are dispersed and method for producing the same
JP5472688B2 (en) Fe-Co alloy sputtering target material and method for producing the same
JP2008189996A (en) Co-Fe-BASED ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING THE SAME
TWI746540B (en) Alloy for seed layer of magnetic recording medium, sputtering target material and magnetic recording medium
JP5305137B2 (en) Ni-W sintered target material for forming Ni alloy intermediate layer of perpendicular magnetic recording medium
JP2008115461A (en) Co-Fe-Zr-BASED ALLOY SPUTTERING TARGET MATERIAL AND PROCESS FOR PRODUCTION THEREOF
JP2009191359A (en) Fe-Co-Zr BASED ALLOY TARGET MATERIAL
WO2018062189A1 (en) Ni-Ta SYSTEM ALLOY, TARGET MATERIAL AND MAGNETIC RECORDING MEDIUM
WO2020009095A1 (en) Ni-based alloy for seed layer in magnetic recording medium
JP2008260970A (en) SINTERED SPUTTERING-TARGET MATERIAL OF Co-Zr-BASED ALLOY AND MANUFACTURING METHOD THEREFOR
JP4970003B2 (en) Co-B target material and method for producing the same
JP2012216273A (en) Fe-Co BASED ALLOY SOFT MAGNETIC FILM FOR PERPENDICULAR MAGNETIC RECORDING MEDIUM, AND POWDER SINTERING SPATTERING TARGET MATERIAL FOR FORMING Fe-Co BASED ALLOY SOFT MAGNETIC FILM FOR PERPENDICULAR MAGNETIC RECORDING MEDIUM
JP2009203537A (en) Co-Fe-BASED ALLOY SPUTTERING TARGET MATERIAL, AND METHOD FOR PRODUCING THE SAME
JPH02107762A (en) Alloy target for magneto-optical recording
JP7274361B2 (en) Alloy for seed layer of magnetic recording media
JP2018085156A (en) Sputtering target for forming soft magnetic film
WO2020040082A1 (en) Co-BASED ALLOY FOR USE IN SOFT MAGNETIC LAYER OF MAGNETIC RECORDING MEDIUM
WO2021141043A1 (en) Sputtering target material
JP2000017433A (en) B2 rule lattice intermetallic compound target and magnetic recording medium
JP2003328118A (en) METHOD FOR MANUFACTURING Ru-Al INTERMETALLIC COMPOUND TARGET, Ru-Al INTERMETALLIC COMPOUND TARGET, AND MAGNETIC RECORDING MEDIUM
JP2006307345A (en) Sputtering target
JP2021180057A (en) Sputtering target material
JP2002133653A (en) Ru target material for magnetic recording medium and magnetic recording medium

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19829870

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19829870

Country of ref document: EP

Kind code of ref document: A1