JP2001243620A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JP2001243620A JP2001243620A JP2000055587A JP2000055587A JP2001243620A JP 2001243620 A JP2001243620 A JP 2001243620A JP 2000055587 A JP2000055587 A JP 2000055587A JP 2000055587 A JP2000055587 A JP 2000055587A JP 2001243620 A JP2001243620 A JP 2001243620A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording medium
- magnetic recording
- seed layer
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ハードディスク装
置の記録媒体として好適な磁気記録媒体に関する。The present invention relates to a magnetic recording medium suitable as a recording medium for a hard disk drive.
【０００２】[0002]
【従来の技術】近年、高記録密度化に伴い磁気記録媒体
には一層の高保磁力、低ノイズ化が求められている。低
ノイズ化のためには、磁性膜の結晶粒の微細化が必須で
ある。磁性膜の結晶粒径は下地膜の結晶粒径に影響され
るため、下地膜の結晶粒径を微細化することが有効であ
る。下地膜の結晶粒径を微細化するために種々の金属
層、合金層、酸化物層を下地膜と基板の間に設けること
が試みられており、この層はシード層と呼ばれている。2. Description of the Related Art In recent years, magnetic recording media have been required to have higher coercive force and lower noise with the increase in recording density. In order to reduce noise, it is essential to make crystal grains of the magnetic film fine. Since the crystal grain size of the magnetic film is affected by the crystal grain size of the underlying film, it is effective to reduce the crystal grain size of the underlying film. Attempts have been made to provide various metal layers, alloy layers, and oxide layers between the base film and the substrate in order to reduce the crystal grain size of the base film, and this layer is called a seed layer.
【０００３】シード層の一つとして、Ｂ２構造を有する
ＮｉＡｌを用いる（米国特許第５６９３４２６号明細
書）ことが報告されている。ＮｉＡｌシード層を設ける
ことにより、磁性膜の結晶配向が（１０．０）を示すた
め、高い面内保磁力を得ることが可能となる。It has been reported that NiAl having a B2 structure is used as one of seed layers (US Pat. No. 5,693,426). By providing the NiAl seed layer, the crystal orientation of the magnetic film shows (10.0), so that a high in-plane coercive force can be obtained.
【０００４】しかしこの場合でも、ＮｉＡｌは高融点材
料であってスパッタリング時の結晶粒の成長の度合いは
低いとはいえ、ＮｉＡｌシード層形成時にＮｉＡｌの結
晶粒の成長を抑制することは難しいため、媒体ノイズは
大きくは改善されなかった。However, even in this case, although NiAl is a high melting point material and the degree of growth of crystal grains during sputtering is low, it is difficult to suppress the growth of NiAl crystal grains during formation of the NiAl seed layer. Media noise was not significantly improved.
【０００５】本発明者は、ＮｉＡｌシード層に酸素を添
加することによって、ＮｉＡｌの結晶粒成長を抑制でき
る（特開平１１−３３９２４４号公報）ことや、ＮｉＡ
ｌシード層を設け、さらに磁性層を中間層によって分割
する（特開平１１−３２８６４６号公報）ことによって
媒体ノイズが改善できることを先に示した。しかし、急
速な高記録密度化にともない、さらに媒体ノイズ（Ｎ
ｍ）の低い磁気記録媒体が求められている。The present inventor has found that by adding oxygen to a NiAl seed layer, it is possible to suppress the crystal grain growth of NiAl (Japanese Patent Laid-Open No. 11-339244),
It has been shown earlier that the medium noise can be improved by providing the 1 seed layer and further dividing the magnetic layer by the intermediate layer (Japanese Patent Laid-Open No. 11-328646). However, with the rapid increase in recording density, media noise (N
A magnetic recording medium having a low m) is required.
【０００６】[0006]
【発明が解決しようとする課題】本発明の目的は、媒体
ノイズ（Ｎｍ）が低く、媒体ノイズに対する信号出力の
比（Ｓ／Ｎｍ）の高い高密度の記録再生が可能な磁気記
録媒体を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a magnetic recording medium which has a low medium noise (Nm) and a high signal recording / reproducing ratio (S / Nm) to the medium noise. Is to do.
【０００７】[0007]
【課題を解決するための手段】本発明は、非磁性基板上
にＮ（窒素）を含むアモルファス膜（以下、第１シード
層と書くことがある）、結晶構造としてＢ２構造を有す
る膜（以下、第２シード層と書くことがある）およびＣ
ｒ膜もしくはＢＣＣ構造を有するＣｒ合金膜（以下、該
Ｃｒ膜もしくは該Ｃｒ合金膜をまとめて下地膜層と書く
ことがある）がこの順に設けられ、さらに該Ｃｒ膜もし
くは該Ｃｒ合金膜の上にＣｏを主成分とする磁性膜を有
することを特徴とする磁気記録媒体を提供する。The present invention provides an amorphous film containing N (nitrogen) on a non-magnetic substrate (hereinafter sometimes referred to as a first seed layer) and a film having a B2 structure as a crystal structure (hereinafter referred to as a first seed layer). , A second seed layer) and C
An r film or a Cr alloy film having a BCC structure (hereinafter, the Cr film or the Cr alloy film may be collectively referred to as a base film layer) is provided in this order, and further provided on the Cr film or the Cr alloy film. And a magnetic recording medium characterized by having a magnetic film containing Co as a main component.
【０００８】本発明における第１シード層は、窒素を含
有するアモルファス合金からなっており、材料としてＮ
ｉＴａＮ、ＮｉＷＮ、ＮｉＮｂＮ、ＮｉＺｒＮ、ＮｉＭ
ｏＮ、ＣｏＴａＮ、ＣｏＷＮ、ＣｏＭｏＮ、ＣｏＮｂＮ
およびＣｏＺｒＮからなる群から選ばれた１種を使用で
きる。[0008] The first seed layer in the present invention is made of an amorphous alloy containing nitrogen.
iTaN, NiWN, NiNbN, NiZrN, NiM
oN, CoTaN, CoWN, CoMoN, CoNbN
And one selected from the group consisting of CoZrN and CoZrN.
【０００９】第１シード層に含有されるＮは媒体ノイズ
（Ｎｍ）を低減させる効果を有する。また、第１シード
層の膜厚は０．５ｎｍ以上５ｎｍ以下であることが好ま
しい。膜厚が０．５ｎｍ未満の場合にはノイズ低減の効
果が十分ではない。また、５ｎｍを超えるとノイズ低減
の効果は認めがたく、また、保磁力の低下や磁気記録媒
体として必要な分解能、孤立再生波時間半値幅（ＰＷ５
０）といった特性が悪くなる。これらの観点から好まし
くは０．５ｎｍ以上５ｎｍ以下、さらに好ましくは１ｎ
ｍ以上４ｎｍ以下である。N contained in the first seed layer has an effect of reducing medium noise (Nm). Further, the thickness of the first seed layer is preferably 0.5 nm or more and 5 nm or less. If the thickness is less than 0.5 nm, the effect of noise reduction is not sufficient. When the thickness exceeds 5 nm, the effect of noise reduction is hardly recognized, and the coercive force is reduced, the resolution required as a magnetic recording medium, and the half width of the isolated reproduction wave time (PW5
0) is deteriorated. From these viewpoints, preferably 0.5 nm or more and 5 nm or less, more preferably 1 n
m or more and 4 nm or less.
【００１０】本発明における第２シード層の材料とし
て、結晶構造としてＢ２構造を有するＮｉＡｌ、ＮｉＡ
ｌＲｕ、ＮｉＡｌＮｄ、ＮｉＡｌＣｒ、ＮｉＡｌＰｔ、
ＣｏＴｉ、ＣｏＡｌおよびＣｏＺｒからなる群から選ば
れた少なくとも１種を使用できる。As a material of the second seed layer in the present invention, NiAl or NiA having a B2 structure as a crystal structure is used.
lRu, NiAlNd, NiAlCr, NiAlPt,
At least one selected from the group consisting of CoTi, CoAl and CoZr can be used.
【００１１】本発明における下地膜層の材料として、Ｃ
ｒ、ＣｒＭｏ、ＣｒＶ、ＣｒＷ、ＣｒＴａ、ＣｒＭｎお
よびＣｒＴｉからなる群から選ばれた少なくとも１種を
使用できる。In the present invention, the material of the underlayer is C
At least one selected from the group consisting of r, CrMo, CrV, CrW, CrTa, CrMn and CrTi can be used.
【００１２】本発明における磁性膜として、Ｃｏを主成
分とし、さらにＣｒとＰｔとＢとを含む合金からなる磁
性膜を選択できる。また前記Ｃｒ、ＰｔおよびＣｒに加
えて、Ｔａ、Ｍｏ、Ｗ、Ｎｂ、Ｖ、Ｚｒ、ＣｕおよびＴ
ｉからなる群から選ばれる少なくとも１種を含む合金か
らなる磁性膜を選択できる。As the magnetic film in the present invention, a magnetic film made of an alloy containing Co as a main component and further containing Cr, Pt and B can be selected. Further, in addition to the Cr, Pt and Cr, Ta, Mo, W, Nb, V, Zr, Cu and T
A magnetic film made of an alloy containing at least one selected from the group consisting of i can be selected.
【００１３】本発明における非磁性基板は、アルミニウ
ム合金、ガラス、結晶化ガラスなどの材料からなる基板
から選択できる。上記した磁性膜の上にさらに保護膜、
潤滑膜を設けることにより、本発明の磁気記録媒体を得
ることができる。保護膜としては、例えば炭素系の材料
を、潤滑膜としては、例えばパーフルオロポリエーテル
系の潤滑剤を使用できる。The non-magnetic substrate in the present invention can be selected from substrates made of materials such as aluminum alloy, glass, and crystallized glass. A protective film on the above magnetic film,
By providing the lubricating film, the magnetic recording medium of the present invention can be obtained. For example, a carbon-based material can be used as the protective film, and a perfluoropolyether-based lubricant can be used as the lubricating film.
【００１４】本発明は、基板上に上記した第１シード層
を設けることにより、その上の第２シード層の結晶粒径
および膜生成が適切に制御され、それにより該第２シー
ド層の上に形成される下地膜層および磁性膜の結晶粒径
および膜生成が適切に制御される。According to the present invention, by providing the above-mentioned first seed layer on a substrate, the crystal grain size and film formation of the second seed layer thereon are appropriately controlled, whereby the second seed layer is formed on the second seed layer. The crystal grain size and film formation of the base film layer and the magnetic film to be formed are appropriately controlled.
【００１５】[0015]
【実施例】［例１］スパッタリング室内を到達真空度３
×１０-6Ｐａまで排気した後、下記のように０．６Ｐａ
の雰囲気かつ基板温度２２０℃で基板バイアスを印加せ
ず成膜を行った。[Example] [Example 1] Degree of ultimate vacuum 3 in the sputtering chamber
After evacuation to × 10 −6 Pa, 0.6 Pa
Film formation was performed in an atmosphere of 220 ° C. and a substrate temperature of 220 ° C. without applying a substrate bias.
【００１６】アルミノシリケートガラスからなる非磁性
基板上に、まずＣｏ50Ｔａ50（各成分量は原子％、以下
同じ）からなるターゲットを用い、アルゴンと窒素の混
合ガスをスパッタリング室内に導入し圧力を０．６Ｐａ
とし、窒素濃度を０％〜４％の範囲（％はアルゴンと窒
素の混合ガスに対する窒素ガスの容積比、以下同じ）で
変化させながらマグネトロンスパッタリング法により成
膜を行い、第１シード層（膜厚：２ｎｍ）を形成した。First, on a non-magnetic substrate made of aluminosilicate glass, using a target made of Co 50 Ta 50 (each component is atomic%, the same applies hereinafter), a mixed gas of argon and nitrogen is introduced into the sputtering chamber, and the pressure is increased. 0.6Pa
A film is formed by a magnetron sputtering method while changing the nitrogen concentration in a range of 0% to 4% (% is a volume ratio of nitrogen gas to a mixed gas of argon and nitrogen, the same applies hereinafter), and a first seed layer (film) (Thickness: 2 nm).
【００１７】次に該第１シード層の上に、Ｂ２構造を有
するＮｉ50Ａｌ50からなるターゲットを用い、アルゴン
ガスを導入し圧力を０．６Ｐａとし第２シード層として
Ｂ２構造を有するＮｉＡｌ層（膜厚：３０ｎｍ）を形成
した。次に第２シード層の上にＣｒ80Ｍｏ20のターゲッ
トを用い下地膜層としてＣｒＭｏ層（膜厚：１０ｎｍ、
ＢＣＣ構造）を形成した。Next, on the first seed layer, a NiAl layer having a B2 structure is used as a second seed layer by using a target made of Ni 50 Al 50 having a B2 structure and introducing an argon gas to a pressure of 0.6 Pa. (Thickness: 30 nm). Then CrMo layer (film thickness of the base film layer using a target of Cr 80 Mo 20 on the second seed layer: 10 nm,
BCC structure).
【００１８】次に前記ＣｒＭｏ層上にＣｏ64Ｃｒ22Ｐｔ
11Ｂ3 からなる磁性膜を２０ｎｍの膜厚で形成し、その
上に炭素系保護膜、パーフルオロポリエーテル系潤滑膜
を設けて本発明の磁気記録媒体の例１の試料とした。上
記第１シード層（窒素濃度を０％の場合を除く）はオー
ジェ電子分光分析（ＡＥＳ）によりＣｏＴａＮの構成を
もつこと、またＸ線回折により上記第１シード層はアモ
ルファスであることが同定された。Next, Co 64 Cr 22 Pt is formed on the CrMo layer.
A magnetic film made of 11 B 3 is formed with a thickness of 20 nm, and its carbon-based protective film on, perfluoropolyether sample of Example 1 of the magnetic recording medium of the present invention to provide a lubricating film. The first seed layer (except when the nitrogen concentration is 0%) is identified to have a structure of CoTaN by Auger electron spectroscopy (AES), and the first seed layer is identified to be amorphous by X-ray diffraction. Was.
【００１９】上記試料について、保磁力Ｈｃを測定し
た。高記録密度媒体にとって高保磁力は必須である。図
１に窒素濃度を０％〜４％の範囲で変化させたときの保
磁力Ｈｃ（ｋＡ／ｍ）の変化を示す。窒素添加により、
この窒素濃度範囲では保磁力Ｈｃの大きな変化は認めら
れない。The coercive force Hc of the sample was measured. High coercivity is essential for high recording density media. FIG. 1 shows a change in coercive force Hc (kA / m) when the nitrogen concentration is changed in a range of 0% to 4%. By adding nitrogen,
No significant change in the coercive force Hc is observed in this nitrogen concentration range.
【００２０】図２に窒素濃度を０％〜４％の範囲で変化
させたときの媒体ノイズＮｍ（ｍＶ 2 ）と媒体ノイズに
対する信号出力の比Ｓ／Ｎｍ（ｄＢ）の変化を示す。２
〜３％濃度の窒素添加により、媒体ノイズＮｍが低減
し、媒体ノイズに対する信号出力の比Ｓ／Ｎｍが改善さ
れた。FIG. 2 shows that the nitrogen concentration is changed in the range of 0% to 4%.
Medium noise Nm (mV Two ) And medium noise
5 shows a change in the ratio S / Nm (dB) of the signal output to the signal output. 2
Medium noise Nm is reduced by addition of nitrogen of 3% concentration
And the ratio S / Nm of the signal output to the medium noise is improved.
Was.
【００２１】上記例１で示すように、窒素を含む第１シ
ード層を設けることにより、保磁力Ｈｃの大きな変化は
なく、一方媒体ノイズＮｍが低減し、媒体ノイズに対す
る信号出力の比Ｓ／Ｎｍが改善されることがわかる。As shown in Example 1 above, by providing the first seed layer containing nitrogen, the coercive force Hc is not largely changed, the medium noise Nm is reduced, and the ratio S / Nm of the signal output to the medium noise is reduced. It can be seen that is improved.
【００２２】［例２］スパッタリング室内を到達真空度
３×１０-6Ｐａまで排気した後、下記のように０．６Ｐ
ａの雰囲気かつ基板温度２２０℃で基板バイアスを印加
せず成膜を行った。[Example 2] After the inside of the sputtering chamber was evacuated to the ultimate vacuum degree of 3 × 10 -6 Pa, 0.6 P was applied as follows.
Film formation was performed in an atmosphere of a and a substrate temperature of 220 ° C. without applying a substrate bias.
【００２３】アルミノシリケートガラスからなる非磁性
基板上に、まずＣｏ50Ｔａ50からなるターゲットを用
い、アルゴンと窒素の混合ガスをスパッタリング室内に
導入し圧力を０．６Ｐａとし、窒素濃度を３％として、
マグネトロンスパッタリング法により成膜を行い、第１
シード層を膜厚０ｎｍ〜１０ｎｍの範囲で変化させ形成
した。First, on a non-magnetic substrate made of aluminosilicate glass, using a target made of Co 50 Ta 50 , a mixed gas of argon and nitrogen was introduced into a sputtering chamber, the pressure was set to 0.6 Pa, and the nitrogen concentration was set to 3%. ,
The first film is formed by magnetron sputtering.
The seed layer was formed by changing the film thickness in the range of 0 nm to 10 nm.
【００２４】次に該第１シード層の上に、Ｂ２構造を有
するＮｉ50Ａｌ50からなるターゲットを用い、アルゴン
ガスを導入し圧力を０．６Ｐａとし第２シード層として
Ｂ２構造を有するＮｉＡｌ層（膜厚：３０ｎｍ）を形成
した。次に第２シード層の上にＣｒ80Ｍｏ20のターゲッ
トを用い下地膜層としてＣｒＭｏ層（膜厚：１０ｎｍ、
ＢＣＣ構造）を形成した。Next, on the first seed layer, an NiAl layer having a B2 structure is used as a second seed layer by using a target made of Ni 50 Al 50 having a B2 structure, introducing an argon gas to a pressure of 0.6 Pa. (Thickness: 30 nm). Then CrMo layer (film thickness of the base film layer using a target of Cr 80 Mo 20 on the second seed layer: 10 nm,
BCC structure).
【００２５】次に前記ＣｒＭｏ層上にＣｏ64Ｃｒ22Ｐｔ
11Ｂ2 Ｃｕ1 からなる磁性膜を２０ｎｍの膜厚で形成
し、その上に炭素系保護膜、パーフルオロポリエーテル
潤滑膜を設けて本発明の磁気記録媒体の例２の試料とし
た。上記第１シード層はＡＥＳによりＣｏＴａＮの構成
をもつこと、またＸ線回折により上記第１シード層はア
モルファスであることが同定された。Next, Co 64 Cr 22 Pt is formed on the CrMo layer.
A magnetic film made of 11 B 2 Cu 1 was formed to a thickness of 20 nm, and a carbon-based protective film and a perfluoropolyether lubricating film were provided thereon to obtain a sample of Example 2 of the magnetic recording medium of the present invention. The first seed layer was identified to have a structure of CoTaN by AES, and the first seed layer was identified to be amorphous by X-ray diffraction.
【００２６】図３に第１シード層ＣｏＴａＮの膜厚を変
化させたときの保磁力Ｈｃ（ｋＡ／ｍ）の変化を示す。
第１シード層ＣｏＴａＮの膜厚の増加とともに保磁力Ｈ
ｃは低下する傾向にあるが、その程度は緩やかである。FIG. 3 shows a change in coercive force Hc (kA / m) when the thickness of the first seed layer CoTaN is changed.
As the thickness of the first seed layer CoTaN increases, the coercive force H increases.
Although c tends to decrease, its degree is moderate.
【００２７】図４に第１シード層ＣｏＴａＮの膜厚を変
化させたときの媒体ノイズに対する信号出力の比Ｓ／Ｎ
ｍの変化を示す。Ｓ／Ｎｍは第１シード層ＣｏＴａＮの
膜厚が０〜２．５ｎｍの範囲で増加し、その後低下する
傾向を示すが、膜厚０．５ｎｍ以上５ｎｍ以下の範囲で
第１シード層を設けない場合（膜厚０）に比べて向上し
ている。FIG. 4 shows the ratio S / N of the signal output to the medium noise when the thickness of the first seed layer CoTaN is changed.
The change in m is shown. S / Nm tends to increase when the thickness of the first seed layer CoTaN is in the range of 0 to 2.5 nm and thereafter decrease, but does not provide the first seed layer in the range of 0.5 nm to 5 nm. It is improved as compared with the case (film thickness 0).
【００２８】このＳ／Ｎｍが向上する膜厚０．５ｎｍ以
上５ｎｍ以下の範囲における保磁力Ｈｃの低下は、図３
からわかるように１０ｋＡ／ｍ程度とわずかな値であ
り、上記膜厚の範囲におけるＨｃの平均値約３１５ｋＡ
／ｍと比べて大きな問題ではない。The decrease of the coercive force Hc in the range of the film thickness of 0.5 nm or more and 5 nm or less at which the S / Nm is improved is shown in FIG.
As can be seen from the figure, the value is as small as about 10 kA / m, and the average value of Hc in the above range of the film thickness is about 315 kA.
/ M is not a big problem.
【００２９】これらから、膜厚が０．５ｎｍ以上５ｎｍ
以下、特に１ｎｍ以上４ｎｍ以下の薄い第１シード層を
設けることにより、保磁力Ｈｃを大きく低下させること
なく、Ｓ／Ｎｍを向上させうることがわかる。From these, the film thickness is 0.5 nm or more and 5 nm or more.
Hereinafter, it is understood that by providing a thin first seed layer having a thickness of 1 nm or more and 4 nm or less, the S / Nm can be improved without significantly lowering the coercive force Hc.
【００３０】[0030]
【発明の効果】本発明の磁気記録媒体は、非磁性基板上
にＮを含むアモルファス膜、Ｂ２構造を有する膜および
Ｃｒ膜もしくはＢＣＣ構造を有するＣｒ合金膜がこの順
に設けられ、さらに該Ｃｒ膜もしくは該Ｃｒ合金膜の上
にＣｏを主成分とする磁性膜を有することにより、保磁
力を大きく低下させることなく、媒体ノイズＮｍが改善
され、媒体ノイズに対する信号出力の比Ｓ／Ｎｍが改善
された特徴を有する磁気記録媒体である。According to the magnetic recording medium of the present invention, an N-containing amorphous film, a film having a B2 structure and a Cr film or a Cr alloy film having a BCC structure are provided in this order on a non-magnetic substrate. Alternatively, by providing a magnetic film containing Co as a main component on the Cr alloy film, the medium noise Nm is improved without greatly lowering the coercive force, and the ratio S / Nm of the signal output to the medium noise is improved. This is a magnetic recording medium having the following characteristics.
【図１】保磁力Ｈｃと第１シード層成膜時の成膜雰囲気
の窒素濃度との関係を示す図。FIG. 1 is a diagram showing a relationship between a coercive force Hc and a nitrogen concentration in a film formation atmosphere at the time of forming a first seed layer.
【図２】媒体ノイズＮｍおよび媒体ノイズに対する信号
出力の比Ｓ／Ｎｍと第１シード層成膜時の成膜雰囲気の
窒素濃度との関係を示す図。FIG. 2 is a diagram showing a relationship between a medium noise Nm and a signal output ratio S / Nm with respect to the medium noise, and a nitrogen concentration in a film formation atmosphere at the time of forming a first seed layer.
【図３】保磁力Ｈｃと第１シード層膜厚との関係を示す
図。FIG. 3 is a diagram illustrating a relationship between a coercive force Hc and a first seed layer thickness.
【図４】媒体ノイズに対する信号出力の比Ｓ／Ｎｍと第
１シード層膜厚との関係を示す図。FIG. 4 is a diagram showing a relationship between a signal output ratio S / Nm to medium noise and a first seed layer thickness.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K029 AA09 BA21 BA23 BA24 BA25 BB02 BD11 CA05 CA13 DA08 DC04 DC39 5D006 BB01 CA01 CA05 CA06 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K029 AA09 BA21 BA23 BA24 BA25 BB02 BD11 CA05 CA13 DA08 DC04 DC39 5D006 BB01 CA01 CA05 CA06
Claims (7)
Ｂ２構造を有する膜およびＣｒ膜もしくはＢＣＣ構造を
有するＣｒ合金膜がこの順に設けられ、さらに該Ｃｒ膜
もしくは該Ｃｒ合金膜の上にＣｏを主成分とする磁性膜
が設けられていることを特徴とする磁気記録媒体。An amorphous film containing N on a non-magnetic substrate,
A film having a B2 structure and a Cr film or a Cr alloy film having a BCC structure are provided in this order, and a magnetic film containing Co as a main component is provided on the Cr film or the Cr alloy film. Magnetic recording medium.
Ｎ、ＮｉＷＮ、ＮｉＮｂＮ、ＮｉＺｒＮ、ＮｉＭｏＮ、
ＣｏＴａＮ、ＣｏＷＮ、ＣｏＭｏＮ、ＣｏＮｂＮおよび
ＣｏＺｒＮからなる群から選ばれた１種からなる請求項
１に記載の磁気記録媒体。2. The method according to claim 1, wherein the N-containing amorphous film is made of NiTa.
N, NiWN, NiNbN, NiZrN, NiMoN,
2. The magnetic recording medium according to claim 1, comprising one selected from the group consisting of CoTaN, CoWN, CoMoN, CoNbN, and CoZrN.
５ｎｍ以上５ｎｍ以下である請求項１または２に記載の
磁気記録媒体。3. The method according to claim 1, wherein said amorphous film containing N has a thickness of 0.1.
3. The magnetic recording medium according to claim 1, having a thickness of 5 nm or more and 5 nm or less.
ＡｌＲｕ、ＮｉＡｌＮｄ、ＮｉＡｌＣｒ、ＮｉＡｌＰ
ｔ、ＣｏＴｉ、ＣｏＡｌおよびＣｏＺｒからなる群から
選ばれた少なくとも１種からなる請求項１、２または３
に記載の磁気記録媒体。4. The film having the B2 structure is made of NiAl, Ni
AlRu, NiAlNd, NiAlCr, NiAlP
4. At least one selected from the group consisting of t, CoTi, CoAl and CoZr.
3. The magnetic recording medium according to claim 1.
Ｍｏ、ＣｒＶ、ＣｒＷ、ＣｒＴａ、ＣｒＭｎおよびＣｒ
Ｔｉからなる群から選ばれた少なくとも１種からなる請
求項１〜４のいずれかに記載の磁気記録媒体。5. The Cr alloy film having the BCC structure is Cr
Mo, CrV, CrW, CrTa, CrMn and Cr
The magnetic recording medium according to any one of claims 1 to 4, comprising at least one member selected from the group consisting of Ti.
ｒとＰｔとＢとを含む合金からなる請求項１〜５のいず
れかに記載の磁気記録媒体。6. The magnetic film containing Co as a main component is made of Co and C.
6. The magnetic recording medium according to claim 1, comprising an alloy containing r, Pt, and B.
が、さらにＴａ、Ｍｏ、Ｗ、Ｎｂ、Ｖ、Ｚｒ、Ｃｕおよ
びＴｉからなる群から選ばれる少なくとも１種を含む合
金である請求項６に記載の磁気記録媒体。7. The alloy containing Co, Cr, Pt and B is an alloy further containing at least one selected from the group consisting of Ta, Mo, W, Nb, V, Zr, Cu and Ti. Item 7. A magnetic recording medium according to Item 6.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000055587A JP4589478B2 (en) | 2000-03-01 | 2000-03-01 | Magnetic recording medium |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020009095A1 (en) * | 2018-07-04 | 2020-01-09 | 山陽特殊製鋼株式会社 | Ni-based alloy for seed layer in magnetic recording medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05189739A (en) * | 1992-01-08 | 1993-07-30 | Hitachi Metals Ltd | Magnetic recording medium |
| JPH11273050A (en) * | 1998-03-18 | 1999-10-08 | Hitachi Ltd | Magnetic recording medium and magnetic memory device |
| JPH11353639A (en) * | 1998-06-02 | 1999-12-24 | Toshiba Corp | Magnetic recording medium and magnetic recorder |
-
2000
- 2000-03-01 JP JP2000055587A patent/JP4589478B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05189739A (en) * | 1992-01-08 | 1993-07-30 | Hitachi Metals Ltd | Magnetic recording medium |
| JPH11273050A (en) * | 1998-03-18 | 1999-10-08 | Hitachi Ltd | Magnetic recording medium and magnetic memory device |
| JPH11353639A (en) * | 1998-06-02 | 1999-12-24 | Toshiba Corp | Magnetic recording medium and magnetic recorder |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020009095A1 (en) * | 2018-07-04 | 2020-01-09 | 山陽特殊製鋼株式会社 | Ni-based alloy for seed layer in magnetic recording medium |
| JP2020009510A (en) * | 2018-07-04 | 2020-01-16 | 山陽特殊製鋼株式会社 | Ni-based alloy for seed layer of magnetic recording medium |
| JP7157573B2 (en) | 2018-07-04 | 2022-10-20 | 山陽特殊製鋼株式会社 | Ni-based alloy for seed layer of magnetic recording media |
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| JP4589478B2 (en) | 2010-12-01 |
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