JP2911797B2 - Magnetic recording medium and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a magnetic recording medium such as a magnetic disk and a magnetic tape, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, a magnetic recording medium having a magnetic layer formed of a metal magnetic thin film manufactured by sputtering or vacuum evaporation has attracted attention. As is well known, a major reason why a metal magnetic thin film has attracted attention as a magnetic recording medium is that a higher recording density can be realized as compared with a conventional magnetic recording medium coated with magnetic powder. As a magnetic material for such a metal magnetic thin film, a Co-containing alloy is known to exhibit good coercive force and squareness. Particularly in recent years, CoPt-based alloy thin films have
Due to its high coercive force and high residual magnetic flux density, it has attracted a great deal of industrial attention as a material that can cope with high density magnetic recording.

[0003] CoNiCr alloys and CoCrT
It is known that in a magnetic recording medium having a magnetic layer such as an a alloy, a high coercive force can be obtained by using Cr as an underlayer (for example, IEEE TRANSACTION ON MAGNETICS).
VOL.MAG-3, NO.3 (1967) p205-207).

[0004]

However, in the case of a CoPt-based alloy magnetic layer, there has been a problem that the use of an underlayer consisting of a single component of Cr deteriorates the C-axis orientation.
Since the atomic radius of Pt is large, the lattice constant of the CoPt-based alloy magnetic layer is larger than the crystal lattice constant of a conventional magnetic layer such as a CoNiCr alloy or a CoCrTa alloy. For this reason, the consistency of the atomic arrangement with the underlayer consisting of a single component of Cr was deteriorated, and as a result, the C-axis orientation was also poor. As a means for solving this problem, it has been proposed to add a second metal (a dissimilar metal) for increasing the crystal lattice constant to the Cr underlayer. By changing the lattice constant of the alloy underlayer by using a Cr alloy (for example, CrV) underlayer in which dissimilar metals are added to Cr, the C-axis orientation of the magnetic layer in the film plane is improved, and the coercive force and the squareness ratio are improved. Can be improved (Japanese Patent Publication No. 4-16848).

[0005] However, as a result of the study by the present inventors,
Media noise, another important characteristic of magnetic properties, is
It has been clarified that the addition of a dissimilar metal to the Cr underlayer results in a sharp increase.

An object of the present invention is to provide a magnetic recording medium having a Cr alloy underlayer and a CoPt-based alloy magnetic layer, which has low medium noise and a method of manufacturing the same. Still another object of the present invention is to provide a Cr
An object of the present invention is to provide a magnetic recording medium having an alloy underlayer and a CoPt-based alloy magnetic layer, which has a high coercive force and a high squareness ratio and low medium noise, and a method of manufacturing the same.

The inventors of the present invention have made various studies and found that the addition of a dissimilar metal (for example, V) to the Cr underlayer causes non-uniform crystal grain size and reduced crystallinity. Observation revealed. That is, when a CoPt-based alloy magnetic layer (for example, CoPtCr or the like) is laminated on a Cr alloy underlayer having a non-uniform crystal grain size and poor crystallinity,
Because the growth is strongly affected by the grain size and crystallinity of the underlayer, it causes non-uniform crystal grain size of the magnetic layer,
It was found that the crystallinity was also significantly reduced. It has been found that this causes an increase in medium noise.

As a solution to this, if a Cr alloy underlayer in which Cr is added with a different metal is laminated on a film having a uniform crystal grain size and good crystallinity, the crystal grain size of the Cr alloy underlayer becomes uniform. It was experimentally revealed that the crystallinity was improved. However, reduction of the medium noise is not sufficient only by using two underlayers.

[0009] Then, further investigation revealed that CoPt
Matching the crystal lattice spacing of the (002) plane of the base alloy magnetic layer with the crystal lattice spacing of the (110) plane of the Cr alloy (Cr added with a dissimilar metal) which is the uppermost layer of the underlayer. It was found that the medium noise was significantly reduced. That is, by reducing the difference between the crystal lattice spacing of the (002) plane of the CoPt-based alloy magnetic layer and the crystal lattice spacing of the (110) plane of the Cr alloy underlayer, which is the uppermost layer of the underlayer, the coercive force is reduced. And the squareness ratio can be improved, and at the same time, the medium noise can be reduced.

Further, the (00) of the CoPt-based alloy magnetic layer
2) Crystal lattice spacing of plane and (110) of Cr alloy underlayer
It has been clarified from experimental results that it is not desirable to make the difference between the crystal lattice spacings of the planes zero, and that a slight difference is preferable from the viewpoint of noise reduction.
That is, the medium noise is reduced by controlling the C-axis orientation of the magnetic layer within a certain range.

[0011]

Accordingly, the present invention provides a magnetic recording medium having a non-magnetic underlayer and a CoPt-based magnetic layer on a substrate in this order, wherein the non-magnetic underlayer comprises one or two layers.
A nonmagnetic underlayer in contact with the CoPt-based magnetic layer is made of a material containing Cr and V as main components, and the Cr and V are determined from the crystal lattice spacing of the hcp (002) plane of the magnetic layer. (D) obtained by subtracting the crystal lattice spacing of the bcc (110) plane of the nonmagnetic underlayer composed of a material containing
₍₀₀₂₎ -d ₍₁₁₀₎ ) is in the range of 0.002 to 0.032 angstroms.

Further, the present invention provides the method for producing a magnetic recording medium according to the present invention, wherein at least a nonmagnetic underlayer and a CoPt-based magnetic layer composed of a material containing Cr and V as main components are heated to a substrate heating temperature range. 250 ° C to 425 ° C, Ar
The present invention relates to a method for manufacturing a magnetic recording medium, which is formed by a sputtering method with a gas pressure range of 0.5 to 10 mTorr. Hereinafter, the present invention will be described.

The magnetic layer of the magnetic recording medium of the present invention is made of CoPt.
A system alloy, that is, an alloy containing Co and Pt as main components.
From the viewpoint of obtaining a sufficient coercive force, the alloy containing Co and Pt as main components is suitably an alloy having a total of 70 at% or more of Co and Pt. The ratio of Co to Pt is not particularly limited, but considering coercive force, noise, and cost, Pt (at%) / Co (at%) is 0.07.
It is appropriate that the range is not less than 0.2 and not more than 0.2.

There are no particular restrictions on components other than Co and Pt, but for example, Cr, Ta, Ni, Si, B, O, N,
One or more of Nb, Mn, Mo, Zn, W, Pb, Re, V, Sm and Zr can be used as appropriate. The addition amount of these elements is appropriately determined in consideration of the magnetic characteristics and the like, and is usually preferably 30 at% or less. More specific materials for the magnetic layer include, for example, CoP
tCr alloy, CoPtTa alloy, CoPtCrB alloy,
CoPtCrTa alloy, CoPtCrNi alloy and the like can be used.

The thickness of the CoPt-based alloy magnetic layer is, for example, 4
It is appropriate that the angle is in the range of 00 to 550 ° in consideration of output, overwriting characteristics, noise, and the like. 400mm thick
If it is less than, sufficient output may not be obtained. When the film thickness exceeds 550 °, the overwriting characteristics deteriorate,
And noise tends to increase.

Further, the magnetic recording medium of the present invention has one or more nonmagnetic underlayers, and the nonmagnetic underlayer in contact with the CoPt-based magnetic layer is made of a material containing Cr and V as main components. . This nonmagnetic underlayer is hereinafter referred to as a CrV-based nonmagnetic underlayer. When the CrV-based nonmagnetic underlayer comprises only Cr and V, the amount of V added to the Cr metal is set to 50 atomic% or less, so that a film having a uniform crystal grain system and good crystallinity can be obtained. It is appropriate from the viewpoint.

Further, Zr, W,
B, Mo, Nb, Ta, Fe, Ni, Re, Ce, Z
One or more of n, P, Si, Ga, Hf, Al, Ti and the like can be added. It is appropriate that the total amount of these components and the V content be 50 atomic% or less from the viewpoint that a film having a uniform crystal grain system and good crystallinity can be obtained. However, the amount of V or the like added to Cr can be appropriately adjusted depending on the content of Co, Pt or other additional elements in the magnetic layer and the types of the additional elements.

For example, when the CoPtCr alloy magnetic layer has a Pt content of 4 to 20 at%, a Cr content of 3 to 30 at%, and a CrV nonmagnetic underlayer of CrV, the CrV nonmagnetic underlayer When the V content of the underlayer is 4 to 40 atomic%, the magnetic layer and the CrV-based nonmagnetic underlayer have a uniform crystal grain size and good crystallinity. This is preferable because the difference in crystal lattice constant can be easily controlled within an appropriate range. Further, a particularly preferable V content is 10 to 10 because Hc is large and has a high S / N ratio.
20 atomic%.

The thickness of the CrV-based nonmagnetic underlayer is 10 to 1
Suitably, it is 50 °. The upper and lower limits of the thickness of the CrV-based nonmagnetic underlayer are determined so that the film has a uniform crystal grain size and good crystallinity, and has a crystal lattice spacing suitable for the magnetic layer. From such a viewpoint, CrV
The preferred thickness of the nonmagnetic underlayer is 20 to 100 °.

When a CrVZr alloy is used as the CrV-based nonmagnetic underlayer, it is preferable to obtain a high Hc, Mrδ, and S / N ratio. This is because when Zr is added to the CrV alloy, the noise reduction effect is further enhanced, and the S / N ratio is improved. In order to bring out such an effect, the content of Zr is preferably set in a range of 2 to 5 at%. This characteristic also depends on the film thickness.
The thickness of the VZr alloy underlayer is 10 to 150 °, particularly preferably 20 to 100 °. If it is less than 10 °, sufficient Hc may not be obtained, and if it exceeds 150 °, the output tends to decrease, the overwriting characteristics deteriorate, and noise tends to increase.

In the magnetic recording medium of the present invention, the Cp is determined from the crystal lattice spacing of the hcp (002) plane of the magnetic layer.
The difference (d ₍₀₀₂₎ −d ₍₁₁₀₎ ) obtained by subtracting the crystal lattice spacing of the bcc (110) plane of the rV nonmagnetic underlayer is 0.002.
０．０0.032 Å. (D
_{If (002)} −d ₍₁₁₀₎ ) is less than 0.002 Å or more than 0.032 Å, Hc decreases and the S / N ratio also decreases. In order to obtain a higher S / N ratio, it is preferable that (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) be in the range of 0.014 Å to 0.030 Å.

In the magnetic recording medium of the present invention, the C
One or more nonmagnetic underlayers may be provided between the rV-based nonmagnetic underlayer and the substrate. And the Cr
The nonmagnetic underlayer in contact with the V-based nonmagnetic underlayer is preferably made of a metal having a body-centered cubic crystal structure. As a nonmagnetic underlayer made of a metal having a body-centered cubic crystal structure, C.I.
r Underlayer can be mentioned. The nonmagnetic underlayer in contact with the CrV-based nonmagnetic underlayer is preferably a metal film having a uniform crystal grain size and good crystallinity.
The membrane was found to be most preferred. As a metal having a body-centered cubic crystal structure, Ti, Ta, Zr besides Cr may be used.
Etc. can also be exemplified.

The thickness of the nonmagnetic underlayer made of a metal having a body-centered cubic crystal structure is suitably in the range of 100 to 1000 °. The upper and lower limits of this nonmagnetic underlayer are:
The thickness of the non-magnetic underlayer is in the range of 100 to 800 ° in order to determine a film having a uniform crystal grain size and good crystallinity, and particularly to have a large Hc and a high S / N ratio. It is appropriate to do so. Further, the ratio of (film thickness of CrV-based nonmagnetic underlayer) / (film thickness of nonmagnetic underlayer made of metal having a body-centered cubic crystal structure) may be between 0.05 and 0.5. , Hc are large and have a high S / N ratio.

In the magnetic recording medium of the present invention, another nonmagnetic underlayer may be further provided between the nonmagnetic underlayer made of the metal having the body-centered cubic crystal structure and the nonmagnetic substrate. As such a nonmagnetic underlayer, Al, T
i, Zr film and the like. The thickness of this nonmagnetic underlayer can be, for example, 10 to 100 °.
The upper limit and the lower limit of the thickness of the nonmagnetic underlayer are determined as ranges in which a film made of a metal having a body-centered cubic crystal structure laminated thereon has a uniform crystal grain size and good crystallinity. In order to further increase Hc and have a high S / N ratio, the film thickness is preferably 30 to 80 °.

In the magnetic recording medium of the present invention, a protective layer and a lubricating layer can be provided on the CoPt-based magnetic layer.
The protective layer has a role of protecting the magnetic layer from chemical attack such as moisture, and a protective layer on the magnetic layer (the surface opposite to the non-magnetic substrate) for the purpose of protecting the magnetic layer from damage caused by sliding contact with the head. There is a protective layer provided to provide abrasion resistance. The protective layer can be composed of one or more layers of different materials. In the magnetic recording medium of the present invention, the material and structure of the protective layer are not particularly limited. Examples of the material include a metal film such as Cr as a chemical protection layer, and a silicon oxide film, a carbon film, a zirconia film, a hydrogenated carbon film, a nitrogen film as a protection layer for imparting wear resistance. Examples include a silicon film and a SiC film.

The silicon oxide film or the like has irregularities on the surface, and also has a role of preventing the head from adsorbing to the surface of the magnetic recording medium. As a technique (texturing technique) for making the surface of the magnetic recording medium uneven, the following can also be used.
First, an aluminum or aluminum nitride (AlN) layer having an uneven surface is provided as a base layer on a substrate by a sputtering method. A predetermined non-magnetic under layer and a magnetic layer are sequentially provided on the under layer having the uneven surface, and a protective layer is further provided on the magnetic layer. This protective layer can be, for example, a carbon film formed by a sputtering method.
With such a configuration, the surface of the protective layer has a shape reflecting the uneven surface of the underlayer. In addition, a second underlayer such as titanium or chromium may be provided between the substrate and the underlayer having an uneven surface to promote crystal growth of the underlayer.

The lubricating layer is a film provided for the purpose of resisting sliding by contact with the head, and the material and the like are not particularly limited. For example, perfluoropolyether and the like can be mentioned.

The material of the substrate is not particularly limited as long as it is a non-magnetic substrate. For example, a glass substrate, a crystallized glass substrate, an aluminum substrate, a ceramic substrate, a carbon substrate, a silicon substrate, or the like can be used.

The magnetic recording medium of the present invention can be manufactured by using a known thin film forming method such as a sputtering method. In particular, by adjusting the composition of the CrV-based nonmagnetic underlayer and the conditions for forming the CrV-based nonmagnetic underlayer and the CoPt-based magnetic layer, the difference (d ₍₀₀₂₎ −d ₍₁₁₀₎ ).

For example, at least the CrV-based nonmagnetic underlayer and the CoPt-based magnetic layer are heated at a substrate heating temperature range of 250 ° C.
To 425 ° C, and the Ar gas pressure range is 0.5 to 10 mT
By forming the orr by a sputtering method, the difference (d ₍₀₀₂₎ −d
₍₁₁₀₎ ) can be obtained. The range of the substrate heating temperature is preferably from 300C to 400C. The range of the Ar gas pressure is preferably 1 to 8
mTorr.

The magnetic recording medium of the present invention has reduced medium noise, high coercive force, and squareness ratio, and thus is useful for magnetic disks, magnetic tapes, and the like.

[0032]

The present invention will be described in detail below with reference to examples and comparative examples.

Embodiment 1 As shown in FIG. 1, the magnetic recording medium of this embodiment is a magnetic disk in which a base layer 2, a magnetic layer 3, a protective layer 4, and a lubricating layer 5 are sequentially laminated on a glass substrate 1. .

The glass substrate 1 is made of aluminosilicate glass, and its surface is mirror-polished to Ra = about 50 °. The underlayer 2 is made of an Al thin film 2a from the glass substrate 1 side.
(Thickness 50 mm), Cr thin film 2b (thick 600 mm), Cr
It is composed of a V thin film 2c (film thickness 50 °). In addition, CrV thin film 2
c is composed of 96 atomic% of Cr and 4 atomic% of V.

The magnetic layer 3 is made of a CoPtCr alloy,
The film thickness is 500 °. The C of the CoPtCr magnetic layer 3
The contents of each of o, Pt, and Cr are 78 atomic%, 1
1 atomic% and 11 atomic%.

The protective layer 4 comprises a first protective layer 4a and a first protective layer 4b from the substrate side. The first protective layer 4a has a thickness of 50
The Cr film is a chemical protection film for the magnetic layer. The other second protective layer 4b is made of a silicon oxide film having a thickness of 160 ° in which hard fine particles are dispersed, and abrasion resistance is obtained by the second protective layer 4b. Lubrication layer 5
Is made of perfluoropolyether, and this film alleviates the contact with the magnetic head.

Hereinafter, a method of manufacturing the magnetic disk will be described. The above glass substrate is used as a substrate holder (pallet)
After the pallet 18 is introduced into the charging chamber 11 of the in-line type sputtering apparatus 10 shown in FIG.
Is evacuated from the atmospheric state until the degree of vacuum in the sputtering chamber (vacuum chamber) 12 becomes equal to that of the vacuum chamber. Then, the partition plate 1
4 and the pallet 18 is moved to the first vacuum chamber 12a.
Introduce within. In the first vacuum chamber 12a,
The glass substrate mounted on the pallet 18 is
After heating at 300 ° C. for 1 minute by heating, the pallet 18 was moved at a transport speed of 1.2 m / min.
In a discharge state under the condition of an Ar gas pressure of 5 mTorr,
The target is sequentially passed between the targets 15a and 16a and the targets 15b and 16b which are arranged opposite to each other. The targets are arranged in the order of Al and Cr with respect to the pallet transport direction, and the Al underlayer 2a and the Cr underlayer 2b are laminated on both surfaces of the glass substrate in the order of the arranged targets. The input power of the Al target is 3
Sputtering was carried out at a power input of a 00 W, Cr target of 1.5 kW.

Next, the pallet 18 is moved to the second vacuum chamber 12b via the port 21, and the substrate is heated again by the heater 20 arranged in the second vacuum chamber 12b. The heating condition is 375 ° C. for 1 minute. afterwards,
CrV targets 15c and 16c, CoPtCr targets 15d and 16d, Cr targets 15e and 16e, and targets 15c and 16c to 15c that are in a discharge state under the condition of an Ar gas pressure of 1.3 mTorr.
The pallet 18 is successively passed between e and 16e at a transport speed of 1.2 m / min. Then, the respective films are stacked in the order of the CrV base film 2c, the CoPtCr magnetic film 3, and the Cr first protective film 4a in the order of the arranged targets.
The input power of the CrV target was 500 W, and the
Sputtering was performed with the input power of the tCr target at 1.2 kW and the input power of the Cr target at 500 W. Further, the ultimate pressure (degree of vacuum) in the first vacuum chamber and the second vacuum chamber was set to 5 × 10 ⁻⁶ Torr or less.

After completion of the film formation by the sputtering, the first protective film 4a is subjected to a hydrophilization treatment by IPA (isopropyl alcohol) washing, and then the substrate is treated with an organic silicon compound solution in which silica fine particles (particle diameter: 100 °) are dispersed. (Water and IP
A mixed solution of A and tetraethoxysilane) and baked to form a second protective layer 4b made of SiO ₂ . Finally, a lubricant made of perfluoropolyether is dipped on the second protective layer 4b to form a lubricating layer 5b.
Was formed.

The running test of the magnetic disk thus obtained was performed at a head flying height of 0.075 μm or less. As a result, it was good. Then, the coercive force (Hc), the product of the residual magnetization film thickness (Mrδ), and the S / N ratio were evaluated. Based on the composition and film thickness of the CrV underlayer 2c, the substrate heating temperature and the Ar gas pressure, and the crystal lattice spacing of the (002) plane of the CoPtCr magnetic layer, (1)
10) Difference obtained by subtracting the crystal lattice spacing of the plane (d ₍₀₀₂₎ -d
_It is shown in Table 1 together with ₍₁₁₀₎ ).

The S / N was evaluated as follows.
Using a thin-film head having a flying height of 0.060 μm, the relative speed between the thin-film head and the disk was 5.4 m / m.
The recording / reproducing output at a linear recording density of 80 kfci was measured. The noise spectrum at the time of signal recording and reproduction was measured for this magnetic disk by a spectrum analyzer with a carrier frequency of 8.5 MHz and a measurement band of 20 MHz. The thin film head used in the above-described measurement has 60 coil turns, a track width of 4.8 μm, and a magnetic head gap length of 0.25 μm.

Examples 2 to 25 In Examples 2 to 22, magnetic disks were manufactured in the same manner as in Example 1 except that the composition and thickness of the CrV-based underlayer 2c, the substrate heating temperature and the Ar gas pressure were changed. . In Examples 23 to 25, the Al thin film (underlying layer) 2a was
Ａｌ to form an Al thin film (formed by sputtering) having an uneven surface with a surface roughness Ra10Å, and a CrV-based underlayer 2c
A magnetic disk was prepared in the same manner as in Example 1 except that a 50 .mu.m thick CrVZr alloy (composition ratio shown in Table 2) was used and the protective layer 4 was a single layer of a 130 .mu.m thick carbon film (formed by sputtering). Produced.

A running test of the magnetic disk thus obtained was performed at a head flying height of 0.075 μm or less. As a result, it was good. Then, the coercive force (Hc), the product of the residual magnetization film thickness (Mrδ), and the S / N ratio were evaluated. Also,
The measurement of the S / N ratio was performed in the same manner as in Example 1. The results were obtained by comparing the composition and thickness of the CrV-based underlayer 2c, the substrate heating temperature and the Ar gas pressure, and the (00
2) From the crystal lattice spacing of the plane, the (1)
10) Difference obtained by subtracting the crystal lattice spacing of the plane (d ₍₀₀₂₎ -d
₍₁₁₀₎ ) and Tables 1 and 2.

Comparative Examples 1 to 6 In Comparative Example 1, magnetic disks were manufactured in the same manner as in Example 1 except that the underlayer 2c was changed to Cr. Comparative Example 2 is CrV
A magnetic disk was manufactured in the same manner as in Example 1 except for the composition ratio of the base layer 2c. In Comparative Examples 3 and 4, magnetic disks were produced in the same manner as in Example 1 except that the substrate heating temperature and the Ar gas pressure during the production of the CrV-based underlayer 2c were changed. In Comparative Examples 5 and 6, magnetic disks were manufactured in the same manner as in Example 20, except that the substrate heating temperature and the Ar gas pressure during the manufacturing of the CrV-based underlayer 2c were changed.

The running test of the magnetic disk thus obtained was carried out at a head flying height of 0.075 μm or less. As a result, it was good. Then, the coercive force (Hc), the product of the residual magnetization film thickness (Mrδ), and the S / N ratio were evaluated. Also,
The measurement of the S / N ratio was performed in the same manner as in Example 1. Based on the results, the composition and film thickness of the underlayer 2c, the substrate heating temperature and the Ar gas pressure, the crystal lattice spacing of the (002) plane of the CoPtCr magnetic layer, The results are shown in Table 3 together with the difference (d ₍₀₀₂₎ -d ₍₁₁₀₎ ).

[0046]

[Table 1]

[0047]

[Table 2]

[0048]

[Table 3]

As can be seen from Tables 1 to 3, Examples 1 to 3
22, the magnetic recording medium in which the underlayer 2c is a CrV alloy has a coercive force (Hc), a residual magnetization film thickness product (Mrδ),
And the S / N ratio is large. Further, the magnetic recording media in which the underlayer 2c was a CrVZr alloy as shown in Examples 23 to 25 had a coercive force (Hc) and a remanent film thickness, as compared with the magnetic recording medium in which the underlayer 2c was Cr in Comparative Example 1. The product (Mrδ) and the S / N ratio are large. In particular, when Zr is added to the CrV alloy, the noise reduction effect is further enhanced, so that the S / N ratio is improved. To achieve such an effect, Zr
Is preferably in the range of 2 to 5 at%.

Further, the difference (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) is obtained by subtracting the crystal lattice spacing of the (110) plane of the underlying layer from the crystal lattice spacing of the (002) plane of the CoPt magnetic layer.
Can vary depending on the composition of the underlayer 2c, the substrate heating temperature, and the Ar gas pressure.
6 can be seen by comparison. For example, in the magnetic recording medium of Comparative Example 2, the V content of the CrV alloy of the underlayer 2c is 5
(D ₍₀₀₂₎ −d ₍₁₁₀₎ ) becomes −
As a result, the S / N ratio was lower than that of the magnetic recording media of Examples 1 to 25. This result indicates that the V content of the CrV alloy in the underlayer 2c should be 4 to 4 to make (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) within the predetermined range of the present invention.
This indicates that 40 at% is preferable.

Further, from the results of Comparative Examples 3 to 6, (d
It can be seen that ₍₀₀₂₎ −d ₍₁₁₀₎ ) changes greatly depending on the substrate heating temperature and the Ar gas pressure. This is presumably because lattice distortion occurs in the film depending on the film production conditions, and lattice distortion in the film changes due to changes in the substrate heating temperature and the Ar gas pressure. From this, (d ₍₀₀₂₎ −
d ₍₁₁₀₎ ) indicates that by adjusting the substrate heating temperature and the Ar gas pressure together with the V content of the CrV-based underlayer, the range of the present invention can be achieved.

Comparative Examples 3 and 4 are magnetic disks manufactured with the same composition ratio and film thickness of the underlayer as Example 1, but with different substrate heating temperatures and different Ar gas pressures. In Comparative Example 3, (d ₍₀₀₂₎ −
d ₍₁₁₀₎ ) is 0.037, so that Hc and S
/ N ratio decreased. In Comparative Example 4, (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) was 0.039 due to an increase in the Ar gas pressure, and
As a result, Mr δ and S / N ratio decreased. Comparative Example 5,
Reference numeral 6 denotes a magnetic disk manufactured in the same manner as in Example 20, except that the composition ratio and the thickness of the underlayer were the same, but the substrate heating temperature and the Ar gas pressure were different. In Comparative Example 5, (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) was -0.0 due to an increase in the substrate heating temperature.
06, and as a result, Mrδ and S / N ratio decreased. In Comparative Example 6, (d)
₍₀₀₂₎ −d ₍₁₁₀₎ ) becomes −0.008, and as a result,
Hc and S / N ratio decreased.

Examples 26 to 43 In Examples 26 to 35, magnetic disks were manufactured in the same manner as in Example 1 except that the composition ratio of the magnetic layer 3 and the composition ratio of CrV of the underlayer 2c were changed. In Examples 36 to 43,
Material and composition ratio of the magnetic layer 3 and CrV of the underlayer 2c
A magnetic disk was manufactured in the same manner as in Example 1 except that the composition ratio was changed. A running test of the magnetic disk thus obtained was performed at a head flying height of 0.075 μm or less.
As a result, it was good. Then, the coercive force (Hc), the product of the residual magnetization film thickness (Mrδ), and the S / N ratio were evaluated.
The measurement of the S / N ratio was performed in the same manner as in Example 1.
The results were obtained by comparing the composition of the magnetic layer 3, the composition and thickness of the CrV underlayer 2c, the substrate heating temperature and the Ar gas pressure, the CoPtC
Table 4 shows the difference (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) obtained by subtracting the crystal lattice spacing of the (110) plane of the underlying layer from the crystal lattice spacing of the (002) plane of the r magnetic layer.

[0054]

[Table 4]

As can be seen from Examples 26 to 35 in Table 4, when a CrV underlayer having a V content of 10 to 20 at% is used and the magnetic layer is made of a CoPtCr alloy, the Co content is 60 to 90 at%. Pt content 4-20at
% And a Cr content of 3 to 30 at%, high H
c) A high S / N ratio can be obtained. Furthermore, high Hc,
In order to obtain a high S / N ratio, the Co content of the CoPtCr alloy magnetic layer is 64 to 84 at%, and the Pt content is 5 to 84 at%.
It is appropriate that the content is 18 at% and the Cr content is 5 to 25 at%.

As can be seen from Examples 36 to 39, when the magnetic layer is a CoPtTa alloy, the Co content is 80 to 90 at%, the Pt content is 5 to 15 at%,
high Hc and high S / N by adjusting the content of a to 1 to 7 at%.
Ratio can be obtained. Further, as can be seen from Examples 40 to 43, when the magnetic layer is a CoPtCrTa alloy,
o content 70-80at%, Pt content 5-15at
%, Cr content 5 to 25 at%, Ta content 1 to 7 at%
%, A high Hc and a high S / N ratio can be obtained.

[0057]

According to the present invention, the conventional Cr underlayer and C
It has excellent magnetostatic properties (coercive force, remanence film thickness product) and recording / reproducing properties (S / N ratio, OW), and is superior to a magnetic disk constituted by a combination with an oPt-based alloy magnetic film. It is possible to provide a magnetic disk having a large output and a small medium noise even in recording / reproducing at a surface recording density of / in ² or more.

[Brief description of the drawings]

FIG. 1 is an explanatory sectional view of a magnetic disk according to the present invention.

FIG. 2 is a schematic diagram of an in-line type sputtering apparatus used in the present embodiment.

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Jun Nozawa 2-7-5 Nakaochiai, Shinjuku-ku, Tokyo Inside Hoya Co., Ltd. (56) References JP-A-5-325163 (JP, A) JP JP-A-7-21543 (JP, A) JP-A-7-134820 (JP, A) JP-A 8-227525 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) G11B 5 / 66 G11B 5/85 H01F 10/16 H01F 10/30

Claims (6)

(57) [Claims] 1. A magnetic recording medium having a non-magnetic underlayer and a CoPt-based magnetic layer in this order on a substrate, wherein the non-magnetic underlayer comprises one or more layers, and the CoPt-based magnetic layer A nonmagnetic underlayer made of a material containing Cr and V as main components, and a nonmagnetic underlayer made of the material containing Cr and V as main components based on the crystal lattice spacing of the hcp (002) plane of the magnetic layer. Difference (d) obtained by subtracting the crystal lattice spacing of the bcc (110) plane
₍₀₀₂₎ -d ₍₁₁₀₎ ) is in the range of 0.002 to 0.032 angstroms. 2. The difference in crystal lattice spacing (d ₍₀₀₂₎ −
2. The magnetic recording medium according to claim 1, wherein d ₍₁₁₀₎ ) is in the range of 0.014 to 0.030 angstroms. 3. Cr and V in contact with the CoPt-based magnetic layer.
The thickness of the non-magnetic underlayer made of a material mainly containing
3. The method according to claim 1, wherein the distance is in the range of about 150 Å.
The magnetic recording medium according to the above. 4. The magnetic recording medium according to claim 1, wherein the CoPt-based magnetic layer is a CoPtCr alloy magnetic layer. 5. The CoPtCr alloy has a Co content of 6%.
0 to 90 at%, Pt content is 4 to 20 at%, Cr
The magnetic recording medium according to claim 4, wherein the content of is 3 to 30 at%. 6. The method of manufacturing a magnetic recording medium according to claim 1, wherein the non-magnetic underlayer and the CoPt-based magnetic layer are made of a material containing at least Cr and V as main components. , Substrate heating temperature range 2
50 ° C. to 425 ° C., and the Ar gas pressure range is 0.5 to 1
A method for producing a magnetic recording medium, wherein the magnetic recording medium is formed by sputtering at 0 mTorr.