JPH09147348A - Magnetic recording medium and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce medium noise and to increase coercive force and squareness ratio by specifying value given by subtracting the interplanar spacing of a prescribed face of a nonmagnetic underlayer from that of a prescribed face of a magnetic layer. SOLUTION: An underlayer 2 on the mirror-polished surface of a glass substrate 1 consists of a thin Al film 2a, a thin Cr film 2b and a thin CrV film 2c from the substrate 1 side. A magnetic layer 3 is made of a CoPtCr alloy. Value [d(002) -d(110) ] given by subtracting the interplanar spacing of the bcc (110) face of the CrV film 2c from that of the hcp (002) face of the magnetic layer 3 is 0.002-0.032Å.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium such as a magnetic disk and a magnetic tape and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, a magnetic recording medium having a magnetic layer of a metal magnetic thin film manufactured by sputtering or vacuum deposition has been receiving attention. As is well known, a major reason why a metal magnetic thin film is attracting attention as a magnetic recording medium is that a higher recording density can be realized as compared with a conventional magnetic powder-coated one. As a magnetic material for such a metal magnetic thin film, a Co-containing alloy is known to exhibit good coercive force and squareness ratio. Especially in recent years, CoPt-based alloy thin films have
Due to its high coercive force and high residual magnetic flux density, it has attracted a great deal of industrial attention as a material that can be used for higher density magnetic recording.

By the way, CoNiCr alloy and CoCrT
It is known that high coercive force can be obtained by using Cr as an underlayer in a magnetic recording medium having a magnetic layer such as an a-alloy (for example, IEEE TRANSACTION ON MAGNETICS).
VOL.MAG-3, NO.3 (1967) p205-207).

[0004]

However, in the case of the CoPt type alloy magnetic layer, there is a problem that the C-axis orientation is deteriorated when an underlayer made of a single component of Cr is used.
Since the atomic radius of Pt is large, the lattice constant of the CoPt-based alloy magnetic layer is larger than the crystal lattice constant of the magnetic layer of the conventional CoNiCr alloy or CoCrTa alloy. Therefore, the conformity of the atomic arrangement with the underlayer made of a single component of Cr was poor, and as a result, the C-axis orientation was also poor. As a means for solving this problem, it has been proposed to add a second metal (different metal) for increasing the crystal lattice constant to the Cr underlayer. By changing the lattice constant of the alloy underlayer using a Cr alloy (eg, CrV) underlayer in which a dissimilar metal is added to Cr, the C-axis orientation of the magnetic layer in the film plane is improved to improve the coercive force and the squareness ratio. Can be improved (Japanese Patent Publication No. 4-16848).

However, as a result of the study by the present inventors,
Media noise, another important characteristic of magnetic properties, is
It was revealed that the addition of a dissimilar metal to the Cr underlayer causes the size to increase rapidly.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a magnetic recording medium having a Cr alloy underlayer and a CoPt type alloy magnetic layer, which has low medium noise, and a method for manufacturing the same. Still another object of the present invention is Cr
A magnetic recording medium having an alloy underlayer and a CoPt-based alloy magnetic layer, which has a high coercive force and squareness ratio and a low medium noise, and a method for manufacturing the same.

As a result of various studies by the present inventors, it was found that when a dissimilar metal (for example, V) is added to the Cr underlayer, nonuniformity of crystal grain size and deterioration of crystallinity occur. Observed. That is, when a CoPt-based alloy magnetic layer (for example, CoPtCr or the like) is laminated on a Cr alloy underlayer having a nonuniform crystal grain size and poor crystallinity,
Since the growth is strongly influenced by the grain size and crystallinity of the underlayer, it causes non-uniformity of the crystal grain size of the magnetic layer, and
It was found that the crystallinity was also significantly reduced. It was found that this causes the medium noise to increase.

As a solution to this problem, if a Cr alloy underlayer in which a dissimilar metal is added to Cr is laminated on a film having a uniform crystal grain size and good crystallinity, the crystal grain size of the Cr alloy underlayer becomes uniform, and It has been experimentally revealed that the crystallinity is improved. However, the reduction of the medium noise is not sufficient just by using two underlayers in this way.

[0009] Then, further examination, CoPt
To match the crystal lattice plane spacing of the (002) plane of the base alloy magnetic layer with the crystal lattice plane spacing of the (110) plane of the Cr alloy (Cr is a different metal added) which is the uppermost layer of the underlayer. It was found that the medium noise was significantly reduced. That is, the coercive force is reduced by reducing the difference between the crystal lattice plane spacing of the (002) plane of the CoPt-based alloy magnetic layer and the crystal lattice plane spacing of the (110) plane of the Cr alloy underlayer which is the uppermost layer of the underlayer. Also, the squareness ratio can be improved, and at the same time, the medium noise can be reduced.

Further, (00) of the CoPt-based alloy magnetic layer is formed.
2) Crystal lattice spacing of plane and (110) of Cr alloy underlayer
From the experimental results, it is clear that it is not desirable to make the difference between the crystal lattice planes of the planes zero, and that a slight difference is preferable from the viewpoint of noise reduction.
That is, medium noise is reduced by controlling the C-axis orientation of the magnetic layer within a certain range.

[0011]

Therefore, the present invention is a magnetic recording medium having a nonmagnetic underlayer and a CoPt-based magnetic layer in this order on a substrate, wherein the nonmagnetic underlayer is one layer or two layers.
The non-magnetic underlayer which is in contact with the CoPt-based magnetic layer is made of a material containing Cr and V as main components, and the Cr and V are determined from the crystal lattice spacing of the hcp (002) plane of the magnetic layer. The difference (d) obtained by subtracting the crystal lattice spacing of the bcc (110) plane of the non-magnetic underlayer made of a material containing
₍₀₀₂₎ -d ₍₁₁₀₎ ) is in the range of 0.002 to 0.032 angstrom.

Further, the present invention is the method for manufacturing a magnetic recording medium according to the present invention, wherein the non-magnetic underlayer and the CoPt magnetic layer made of a material containing at least Cr and V as main components are provided in a substrate heating temperature range. 250 ° C to 425 ° C, Ar
The present invention relates to a method for manufacturing a magnetic recording medium, which is formed by a sputtering method with a gas pressure range of 0.5 to 10 mTorr. The present invention will be described below.

The magnetic layer of the magnetic recording medium of the present invention is CoPt.
It is a system alloy, that is, an alloy containing Co and Pt as main components.
From the viewpoint of obtaining a sufficient coercive force, the alloy containing Co and Pt as the main components is preferably an alloy containing 70 at% or more of Co and Pt in total. The ratio of Co and Pt is not particularly limited, but Pt (at%) / Co (at%) is 0.07 in consideration of coercive force, noise and cost.
It is appropriate that the range is not less than 0.2 and not more than 0.2.

Components other than Co and Pt are not particularly limited, but for example, Cr, Ta, Ni, Si, B, O, N,
One or more of Nb, Mn, Mo, Zn, W, Pb, Re, V, Sm and Zr can be appropriately used. The addition amount of these elements is appropriately determined in consideration of magnetic properties and the like, and is usually 30 at% or less. As a more specific material for the magnetic layer, for example, CoP
tCr alloy, CoPtTa alloy, CoPtCrB alloy,
CoPtCrTa alloy, CoPtCrNi alloy, etc. can be used.

The film thickness of the CoPt-based alloy magnetic layer is, for example, 4
The range of 00 to 550Å is appropriate in consideration of output, overwriting characteristics, noise and the like. Film thickness is 400Å
If it falls below the range, sufficient output may not be obtained. Also, when the film thickness exceeds 550Å, the overwriting characteristics deteriorate,
And noise tends to increase.

Further, the magnetic recording medium of the present invention has one or more nonmagnetic underlayers, and the nonmagnetic underlayer in contact with the CoPt magnetic layer is made of a material containing Cr and V as main components. . Hereinafter, this nonmagnetic underlayer is referred to as a CrV-based nonmagnetic underlayer. When the CrV-based non-magnetic underlayer is composed of only Cr and V, the V content added to the Cr metal may be 50 atomic% or less to form a film having a uniform crystal grain system and good crystallinity. It is suitable from the viewpoint.

Further, instead of a part of V, Zr, W,
B, Mo, Nb, Ta, Fe, Ni, Re, Ce, Z
One or more of n, P, Si, Ga, Hf, Al, Ti and the like may be added. It is appropriate that the total amount of these components added to the amount of V is 50 atomic% or less from the viewpoint that a film having a uniform crystal grain system and good crystallinity can be obtained. However, the amount of V or the like added to Cr can be appropriately adjusted depending on the content of Co, Pt or other additive element in the magnetic layer and the type of the additive element.

For example, when the Pt content in the CoPtCr alloy magnetic layer is 4 to 20 atomic%, the Cr content is 3 to 30 atomic%, and the CrV-based nonmagnetic underlayer is CrV, a CrV-based nonmagnetic material is used. It is preferable that the V content of the formation is 4 to 40 atomic%, because the crystal grain size of the magnetic layer and the CrV-based nonmagnetic underlayer is uniform and the crystallinity is good, and further, the V content of the CrV-based nonmagnetic underlayer and the magnetic layer is This is preferable because it is easy to control the difference in crystal lattice constant within an appropriate range. In addition, since the Hc is large and the S / N ratio is high, the particularly preferable V content is 10
It is 20 atomic%.

The thickness of the CrV nonmagnetic underlayer is 10 to 1
A value of 50Å is appropriate. The upper and lower limits of the film thickness of the CrV-based non-magnetic underlayer are determined so that the film has a uniform crystal grain size and good crystallinity, and has a crystal lattice spacing that matches the magnetic layer. From such a viewpoint, CrV
The preferred thickness of the non-magnetic underlayer is 20-100Å.

When CrVZr alloy is used as the CrV-based non-magnetic underlayer, it is preferable that high Hc, Mr δ and S / N ratio can be obtained. This is because the addition of Zr to the CrV alloy further enhances the noise reduction effect and improves the S / N ratio. In order to bring out such an effect, the Zr content is preferably in the range of 2 to 5 at%. In addition, this characteristic depends on the film thickness, and Cr
The VZr alloy underlayer has a film thickness of 10 to 150Å, particularly preferably 20 to 100Å. If it is less than 10Å, sufficient Hc may not be obtained, and if it exceeds 150Å, there is a tendency that output decreases, overwrite characteristics deteriorate, and noise increases.

In the magnetic recording medium of the present invention, the above-mentioned C is determined from the crystal lattice spacing of the hcp (002) plane of the magnetic layer.
The difference (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) obtained by subtracting the crystal lattice spacing of the bcc (110) plane of the rV nonmagnetic underlayer is 0.002.
˜0.032 Å. (D
_{When (002)} -d ₍₁₁₀₎ ) is less than 0.002 angstroms and exceeds 0.032 angstroms, Hc is lowered and the S / N ratio is also lowered. Further, in order to obtain an even higher S / N ratio, it is preferable that (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) be in the range of 0.014 angstrom to 0.030 angstrom.

In the magnetic recording medium of the present invention, the C
One or two or more nonmagnetic underlayers may be provided between the rV-based nonmagnetic underlayer and the substrate. And the Cr
The nonmagnetic underlayer in contact with the V-based nonmagnetic underlayer is preferably made of a metal having a body-centered cubic closest-packed crystal structure. An example of the nonmagnetic underlayer made of a metal having a body-centered cubic closest-packed crystal structure is a Cr underlayer. The nonmagnetic underlayer in contact with the CrV-based nonmagnetic underlayer is preferably a metal film having a uniform crystal grain size and good crystallinity, and it has been experimentally confirmed that the Cr film is most preferable.
Further, as a metal having a body-centered cubic closest-packed crystal structure, C
Other than r, Ti, Ta, Zr and the like can be exemplified.

The thickness of the non-magnetic underlayer made of a metal having a body-centered cubic closest-packed crystal structure is preferably in the range of 100 to 1000Å. The upper and lower limits of this non-magnetic underlayer are determined so that the film has a uniform crystal grain size and good crystallinity. In particular, in order to have a large Hc and a high S / N ratio, The thickness of the formation is 100-80
A range of 0Å is suitable. Furthermore, (CrV
(The thickness of the non-magnetic underlayer of the system) / (the thickness of the nonmagnetic underlayer made of a metal having a body-centered cubic close-packed crystal structure)
It is preferably between 0.05 and 0.5 from the viewpoint that Hc is large and the S / N ratio is high.

In the magnetic recording medium of the present invention, another non-magnetic under layer may be provided between the non-magnetic under layer and the non-magnetic substrate which are made of a metal having the body-centered cubic closest packed crystal structure. it can. As such a non-magnetic underlayer,
Examples thereof include Al, Ti and Zr films. The film thickness of this non-magnetic underlayer can be set to, for example, 10 to 100Å. The upper and lower limits of the film thickness of this non-magnetic underlayer are set so that the film formed of a metal having a body-centered cubic closest-packed crystal structure and having a uniform crystal grain size and good crystallinity Determined. Further, in order to have a larger Hc and a high S / N ratio, the film thickness is preferably 30 to 80Å.

In the magnetic recording medium of the present invention, a protective layer and a lubricating layer can be provided on the CoPt magnetic layer.
The protective layer is a protective layer that protects the magnetic layer from chemical attack such as moisture, and on the magnetic layer (the surface opposite to the non-magnetic substrate) for the purpose of protecting the magnetic layer from damage caused by contact sliding. There is a protective layer provided to provide wear resistance. The protective layer may be composed of one layer or two or more layers made of different materials. In the magnetic recording medium of the present invention, the material and structure of the protective layer are not particularly limited. As the material, for example, a metal film such as Cr can be used as the chemical protective layer, and a silicon oxide film, a carbon film, a zirconia film, a hydrogenated carbon film, nitrogen can be used as the protective layer imparting wear resistance. Examples thereof include a silicon film and a SiC film.

The silicon oxide film or the like has irregularities on the surface and also has a role of preventing the head from adsorbing to the surface of the magnetic recording medium. The following can also be used as a technique for making the surface of the magnetic recording medium uneven (texturing technique).
First, an aluminum or aluminum nitride (AlN) layer having an uneven surface is provided as a base layer on a substrate by a sputtering method. A predetermined nonmagnetic underlayer and a magnetic layer are sequentially provided on the underlayer having an uneven surface, and a protective layer is further provided on the magnetic layer. This protective layer can be, for example, a carbon film formed by a sputtering method.
With such a structure, the surface of the protective layer has a shape that reflects the uneven surface of the underlayer. A second underlayer of titanium, chromium or the like may be provided between the substrate and the underlayer having an uneven surface to promote crystal growth of the underlayer.

The lubricating layer is a film provided for the purpose of resisting by contact sliding with the head, and the material and the like are not particularly limited. For example, perfluoropolyether and the like can be mentioned.

The material and shape of the substrate are not particularly limited as long as it is a non-magnetic substrate. For example, a glass substrate, a crystallized glass substrate, an aluminum substrate, a ceramic substrate, a carbon substrate, a silicon substrate or the like can be used.

The magnetic recording medium of the present invention can be manufactured by utilizing a known thin film forming method such as a sputtering method. In particular, by adjusting the composition of the CrV-based non-magnetic underlayer and the formation conditions of the CrV-based non-magnetic underlayer and the CoPt-based magnetic layer, the difference in the crystal lattice plane spacing (d ₍₀₀₂₎ A magnetic recording medium having -d ₍₁₁₀₎ ) can be obtained.

For example, at least the CrV-based nonmagnetic underlayer and the CoPt-based magnetic layer are used at a substrate heating temperature range of 250 ° C.
~ 425 ° C, Ar gas pressure range 0.5 ~ 10mT
Orr is formed by a sputtering method, so that a difference in crystal lattice plane spacing in a predetermined range (d ₍₀₀₂₎ −d
A magnetic recording medium having ₍₁₁₀₎ ) can be obtained. The substrate heating temperature range is preferably 300 ° C to 400 ° C. The range of Ar gas pressure is preferably 1-8.
mTorr.

The magnetic recording medium of the present invention has reduced medium noise, high coercive force, and squareness ratio, and is therefore useful for magnetic disks, magnetic tapes and the like.

[0032]

EXAMPLES The present invention will be described in detail below with reference to examples and comparative examples.

Example 1 As shown in FIG. 1, the magnetic recording medium of this example is a magnetic disk in which an underlayer 2, a magnetic layer 3, a protective layer 4, and a lubricating layer 5 are sequentially laminated on a glass substrate 1. .

The glass substrate 1 is made of aluminosilicate glass, and the surface thereof is mirror-polished to Ra = 50Å. The underlying layer 2 is an Al thin film 2a from the glass substrate 1 side.
(Film thickness 50Å), Cr thin film 2b (thick film 600Å), Cr
It consists of a V thin film 2c (film thickness 50Å). In addition, CrV thin film 2
The composition of c is 96 atomic% of Cr and 4 atomic% of V.

The magnetic layer 3 is made of a CoPtCr alloy,
The film thickness is 500Å. Incidentally, C of the CoPtCr magnetic layer 3
The contents of o, Pt, and Cr are 78 atomic% and 1 respectively.
They are 1 atom% and 11 atom%.

The protective layer 4 comprises a first protective layer 4a and a first protective layer 4b from the substrate side. The first protective layer 4a has a film thickness of 50.
It consists of a Cr film of Å and is a chemical protection film for the magnetic layer. The other second protective layer 4b is made of a silicon oxide film having a film thickness of 160Å in which hard particles are dispersed, and the second protective layer 4b provides abrasion resistance. Lubrication layer 5
Is made of perfluoropolyether, and this film alleviates the contact with the magnetic head.

A method of manufacturing the above magnetic disk will be described below. The above glass substrate is a substrate holder (pallet)
2 and the pallet 18 was introduced into the charging chamber 11 of the in-line type sputtering apparatus 10 shown in FIG.
Is evacuated from the atmospheric state until the degree of vacuum in the sputtering chamber (vacuum chamber) 12 becomes equivalent to that. After that, partition plate 1
4 to open the pallet 18 to the first vacuum chamber 12a
Introduce within. In the first vacuum chamber 12a,
The glass substrate mounted on the pallet 18 is attached to the lamp heater 19
After heating under a heating condition of 300 ° C. for 1 minute, the pallet 18 is moved at a conveying speed of 1.2 m / min,
In a discharge state under Ar gas pressure of 5 mTorr,
The targets 15a and 16a and the targets 15b and 16b, which are arranged to face each other, are sequentially passed. The targets are arranged in the order of Al and Cr with respect to the pallet transport direction, and the Al base film 2a and the Cr base film 2b are laminated in this order on both surfaces of the glass substrate in the order of the arranged targets. The input power of the Al target is 3
Sputtering was performed at a power of 00 W and a Cr target of 1.5 kW.

Next, the pallet 18 is moved to the second vacuum chamber 12b via the port 21, and the substrate is heated again by the heater 20 arranged in the second vacuum chamber 12b. The heating conditions are 375 ° C. and 1 minute. afterwards,
The CrV targets 15c and 16c, the CoPtCr targets 15d and 16d, the Cr targets 15e and 16e are arranged in this order, and the targets 15c and 16c to 15c are in a discharged state under the condition of Ar gas pressure of 1.3 mTorr.
The pallet 18 is sequentially passed between e and 16e at a transportation speed of 1.2 m / min. Then, the CrV underlayer film 2c, the CoPtCr magnetic film 3, and the Cr first protective film 4a are laminated in this order in the order of the arranged targets.
The CrV target input power is 500 W, CoP
Sputtering was performed with the input power of the tCr target being 1.2 kW and the input power of the Cr target being 500 W. Furthermore, the ultimate pressure (vacuum degree) in the first vacuum chamber and the second vacuum chamber was set to 5 × 10 ⁻⁶ Torr or less.

After the film formation by the above-mentioned sputtering, the first protective film 4a is subjected to a hydrophilizing treatment by IPA (isopropyl alcohol) cleaning, and then the substrate is an organosilicon compound solution in which silica fine particles (particle size 100Å) are dispersed. (Water and IP
The second protective layer 4b made of SiO ₂ was formed by immersing in A) and tetraethoxysilane and baking. Finally, a lubricant made of perfluoropolyether is dip-processed on the second protective layer 4b to form the lubricating layer 5
Was formed.

A running test of the magnetic disk thus obtained was conducted with a head flying height of 0.075 μm or less. As a result, it was good. Then, the coercive force (Hc), the residual magnetization film thickness product (Mrδ), and the S / N ratio were evaluated. The results are shown in terms of the composition and film thickness of the CrV underlayer 2c, the substrate heating temperature and the Ar gas pressure, the crystal lattice spacing of the (002) plane of the CoPtCr magnetic layer, and (1
10) Difference obtained by subtracting the crystal lattice spacing (d ₍₀₀₂₎ -d
₍₁₁₀₎ ) and shown in Table 1.

The S / N was evaluated as follows.
Using a thin film head having a magnetic head flying height of 0.060 μm, the relative speed between the thin film head and the disk is 5.4 m /
s, and the recording / reproducing output at a linear recording density of 80 kfci was measured. Further, the noise spectrum at the time of signal recording / reproduction was measured for this magnetic disk by a spectrum analyzer with a carrier frequency of 8.5 MHz and a measurement band of 20 MHz. The thin film head used in the above measurement has 60 coil turns, a track width of 4.8 μm, and a magnetic head gap length of 0.25 μm.

Examples 2 to 25 In Examples 2 to 22, magnetic disks were produced in the same manner as in Example 1 except that the composition and film thickness of the CrV underlayer 2c, the substrate heating temperature and the Ar gas pressure were changed. . Moreover, in Examples 23 to 25, the Al thin film (underlayer) 2a was formed to a thickness of 50.
An Al thin film (formed by a sputtering method) having an uneven surface having a surface roughness Ra10Å with Å and a CrV base layer 2c
Was a CrVZr alloy (composition ratio shown in Table 2) having a film thickness of 50Å, and the protective layer 4 was a single carbon film (formed by a sputtering method) having a film thickness of 130Å. It was made.

A running test of the magnetic disk thus obtained was conducted with a head flying height of 0.075 μm or less. As a result, it was good. Then, the coercive force (Hc), the residual magnetization film thickness product (Mrδ), and the S / N ratio were evaluated. Also,
The S / N ratio was measured in the same manner as in Example 1. The results are used for the composition and film thickness of the CrV-based underlayer 2c, the substrate heating temperature and the Ar gas pressure, and (00) of the CoPtCr magnetic layer.
2) From the crystal lattice spacing of the plane, the (1
10) Difference obtained by subtracting the crystal lattice spacing (d ₍₀₀₂₎ -d
₍₁₁₀₎ ) and the results are shown in Tables 1 and 2.

Comparative Examples 1 to 6 In Comparative Example 1, a magnetic disk was manufactured in the same manner as in Example 1 except that the underlayer 2c was changed to Cr. Comparative Example 2 is CrV
A magnetic disk was produced in the same manner as in Example 1 except for the composition ratio of the system underlayer 2c. In Comparative Examples 3 and 4, magnetic disks were produced in the same manner as in Example 1 except that the substrate heating temperature and the Ar gas pressure during the production of the CrV underlayer 2c were changed. In Comparative Examples 5 and 6, magnetic disks were produced in the same manner as in Example 20 except that the substrate heating temperature and the Ar gas pressure during the production of the CrV underlayer 2c were changed.

A running test of the magnetic disk thus obtained was conducted with a head flying height of 0.075 μm or less. As a result, it was good. Then, the coercive force (Hc), the residual magnetization film thickness product (Mrδ), and the S / N ratio were evaluated. Also,
The S / N ratio was measured in the same manner as in Example 1. The results are obtained by changing the composition and film thickness of the underlayer 2c, the substrate heating temperature and the Ar gas pressure, the crystal lattice spacing of the (002) plane of the CoPtCr magnetic layer to the crystal lattice spacing of the (110) plane of the underlayer in contact therewith. It is shown in Table 3 together with the subtracted difference (d ₍₀₀₂₎ -d ₍₁₁₀₎ ).

[0046]

[Table 1]

[0047]

[Table 2]

[0048]

[Table 3]

As can be seen from Tables 1 to 3, Examples 1 to 1
The magnetic recording medium shown in 22 in which the underlayer 2c is a CrV alloy has a coercive force (Hc), a residual magnetization film thickness product (Mrδ), which is higher than that of the magnetic recording medium in which the underlayer 2c in Comparative Example 1 is Cr.
And the S / N ratio is large. Further, the magnetic recording medium in which the underlayer 2c was formed of CrVZr alloy shown in Examples 23 to 25 was higher than the magnetic recording medium of Comparative Example 1 in which the underlayer 2c was Cr in coercive force (Hc) and residual magnetization film thickness. The product (Mrδ) and the S / N ratio are large. Particularly, when Zr is added to the CrV alloy, the noise reduction effect is further enhanced, so that the S / N ratio is improved. In order to bring out such an effect, Zr
It can be seen that it is preferable to set the content of 2 to 5 at%.

Further, the difference (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) obtained by subtracting the crystal lattice spacing of the (110) plane of the underlying layer in contact with the crystal lattice spacing of the (002) plane of the CoPt magnetic layer.
Changes depending on the composition of the underlayer 2c, the substrate heating temperature, and the Ar gas pressure.
It can be seen by comparing 6 For example, in the magnetic recording medium of Comparative Example 2, the V content of the CrV alloy of the underlayer 2c is 5%.
Since it was 0 at%, (d ₍₀₀₂₎ −d ₍₁₁₀₎ ) was −
The value was 0.015, and as a result, the S / N ratio was lower than that of the magnetic recording media of Examples 1 to 25. This result shows that the V content of the CrV alloy of the underlayer 2c is 4 to 4 in order to make (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) within the predetermined range of the present invention.
This shows that the content of 40 at% is preferable.

Further, from the results of Comparative Examples 3 to 6, (d
It can be seen that ₍₀₀₂₎ -d ₍₁₁₀₎ ) changes greatly depending on the substrate heating temperature and Ar gas pressure. It is presumed that this is because lattice strain occurs in the film depending on the film manufacturing conditions, and the lattice strain in the film changes due to changes in the substrate heating temperature and Ar gas pressure. From this, (d ₍₀₀₂₎ −
d ₍₁₁₀₎ ) indicates that the range of the present invention can be achieved by adjusting the substrate heating temperature and Ar gas pressure together with the V content of the CrV underlayer.

Comparative Examples 3 and 4 are magnetic disks which have the same composition ratio and film thickness of the underlayer as those of Example 1, but are different in substrate heating temperature and Ar gas pressure. In Comparative Example 3, (d ₍₀₀₂₎ -
d ₍₁₁₀₎ ) becomes 0.037, resulting in Hc and S
/ N ratio decreased. In Comparative Example 4, (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) became 0.039 due to the increase in Ar gas pressure,
As a result, Mr δ and S / N ratio decreased. Comparative Example 5,
Example 6 is a magnetic disk having the same composition ratio and film thickness of the underlayer as those of Example 20, but different substrate heating temperatures and Ar gas pressures. In Comparative Example 5, (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) was -0.0 due to the increase in the substrate heating temperature.
06, and as a result, Mr δ and S / N ratio decreased. In Comparative Example 6, (d
₍₀₀₂₎ -d ₍₁₁₀₎ ) becomes -0.008, and as a result,
Hc and S / N ratio decreased.

Examples 26 to 43 In Examples 26 to 35, magnetic disks were manufactured in the same manner as in Example 1 except that the composition ratio of the magnetic layer 3 and the composition ratio of CrV of the underlayer 2c were changed. In Examples 36-43,
Material and composition ratio of the magnetic layer 3 and CrV of the underlayer 2c
A magnetic disk was manufactured in the same manner as in Example 1 except that the composition ratio was changed. A running test of the magnetic disk thus obtained was conducted with a head flying height of 0.075 μm or less.
As a result, it was good. Then, the coercive force (Hc), the residual magnetization film thickness product (Mrδ), and the S / N ratio were evaluated.
The S / N ratio was measured in the same manner as in Example 1.
The results are used for the composition of the magnetic layer 3, the composition and film thickness of the CrV underlayer 2c, the substrate heating temperature and the Ar gas pressure, and CoPtC.
Table 4 shows the difference (d ₍₀₀₂₎ -d ₍₁₁₀₎ ) obtained by subtracting the crystal lattice spacing of the (110) plane of the underlying layer in contact with the crystal lattice spacing of the (002) plane of the r magnetic layer.

[0054]

[Table 4]

As can be seen from Examples 26 to 35 in Table 4, when a CrV underlayer having a V content of 10 to 20 at% is used and the magnetic layer is a CoPtCr alloy, the Co content is 60 to 90 at%. Pt content of 4 to 20 at
%, Cr content of 3 to 30 at%, high H
c, a high S / N ratio can be obtained. Furthermore, high Hc,
In order to obtain a high S / N ratio, the CoPtCr alloy magnetic layer has a Co content of 64 to 84 at% and a Pt content of 5 to 5.
18 at% and the Cr content is 5 to 25 at%.

As can be seen from Examples 36 to 39, when the magnetic layer is a CoPtTa alloy, the Co content is 80 to 90 at%, the Pt content is 5 to 15 at%, and the T content is T.
High Hc and high S / N by setting a content to 1 to 7 at%
Ratio can be obtained. Further, as can be seen from Examples 40 to 43, when the magnetic layer is a CoPtCrTa alloy, C
o content 70-80 at%, Pt content 5-15 at
%, Cr content 5 to 25 at%, Ta content 1 to 7 at
A high Hc and a high S / N ratio can be obtained by setting the ratio to%.

[0057]

According to the present invention, the conventional Cr underlayer and C
It has excellent magnetostatic characteristics (coercive force, remanent magnetization film thickness product) and recording / reproducing characteristics (S / N ratio, OW) as compared with a magnetic disk composed of a combination with an oPt-based alloy magnetic film, and is 500 Mb. It is possible to provide a magnetic disk having a large output and a small medium noise even in recording / reproducing at an areal recording density of / in ² or more.

[Brief description of the drawings]

FIG. 1 is an explanatory cross-sectional view of a magnetic disk of the present invention.

FIG. 2 is a schematic diagram of an in-line type sputtering apparatus used in this example.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical indication location H01F 10/16 H01F 10/16 41/18 41/18 (72) Inventor Jun Nozawa Shinjuku-ku, Tokyo 2-7-5 Nakaochiai Hoya Co., Ltd.

Claims (7)

[Claims] 1. A magnetic recording medium having a non-magnetic underlayer and a CoPt-based magnetic layer in this order on a substrate, wherein the non-magnetic underlayer is composed of one or more layers, and the CoPt-based magnetic layer. The non-magnetic underlayer in contact with is composed of a material containing Cr and V as main components, and the non-magnetic underlayer is composed of a material containing Cr and V as main components from the crystal lattice spacing of the hcp (002) plane of the magnetic layer. Difference (d) obtained by subtracting the crystal lattice spacing of the bcc (110) plane of
₍₀₀₂₎ -d ₍₁₁₀₎ ) is in the range of 0.002 to 0.032 angstroms. 2. A difference in crystal lattice spacing (d ₍₀₀₂₎ −d
The magnetic recording medium according to claim 1, wherein ₍₁₁₀₎ ) is in the range of 0.014 to 0.030 angstrom. 3. A nonmagnetic underlayer made of a material containing Cr and V as main components and a nonmagnetic underlayer of one or more layers between the substrate and the main components of Cr and V. The magnetic recording medium according to claim 1 or 2, wherein the nonmagnetic underlayer in contact with the nonmagnetic underlayer made of a material is made of a metal having a body-centered cubic closest-packed crystal structure. 4. The magnetic recording medium according to claim 3, wherein the nonmagnetic underlayer made of a metal having a body-centered cubic closest-packed crystal structure is a Cr layer. 5. The magnetic recording medium according to claim 1, wherein the CoPt-based magnetic layer is a CoPtCr alloy magnetic layer. 6. The CoPtCr alloy has a Co content of 6
0 to 90 at%, Pt content 4 to 20 at%, Cr
6. The magnetic recording medium according to claim 5, wherein the content of 3 to 30 at%. 7. The method for manufacturing a magnetic recording medium according to claim 1, further comprising a non-magnetic underlayer and a CoPt-based magnetic layer made of a material containing at least Cr and V as main components. , Substrate heating temperature range 2
50 ° C. to 425 ° C., Ar gas pressure range 0.5 to 1
A method of manufacturing a magnetic recording medium, which is formed by a sputtering method at 0 mTorr.